Foreline for semiconductor processing

Abstract

A semiconductor processing system is provided with a processing chamber defining an interior volume, a plurality of exhaust ports in a bottom of the chamber, and a foreline network fluidically connected to the exhaust ports and the interior volume, configured to receive process gases from the interior volume, and having a first branch extending from a first exhaust port and terminating at a first junction, a second branch extending from a second exhaust port and terminating at the first junction, and a third branch extending from, and downstream of, the first junction and configured to fluidically connect with an exhaust. The third branch is downstream of the first branch, second branch, and the first junction, the first branch, the second branch, and the third branch has aluminum tubing with nickel-plating, and the nickel-plating is on interior surfaces of the first branch, second branch, and third branch.

Description

Attorney Docket No. LAM1P076WO-12099-1WOFORELINE FOR SEMICONDUCTOR PROCESSINGINCORPORATION BY REFERENCE

[0000] A PCT Request Form is filed concurrently with this specification as part of the present application. Each application that the present application claims benefit of or priority to as identified in the concurrently filed PCT Request Form is incorporated by reference herein in their entireties and for all purposes.BACKGROUND

[0001] The background description provided herein is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.

[0002] Chemical deposition systems may be used to deposit films on substrates (e.g., semiconductor wafers, etc.). Examples of chemical deposition systems may include plasma- enhanced chemical vapor deposition (PECVD) systems, chemical vapor deposition (CVD) systems, and atomic layer deposition (ALD) systems. Such systems may include one or more showerheads that are positioned within a processing chamber having substrate processing regions. The substrate processing region may be defined between a bottom side of the showerhead and a wafer support (i.e., a pedestal, a substrate support, etc.) that may be positioned beneath each showerhead and configured to support a substrate within the substrate region. The bottom side of the showerhead may include ports facing the wafer support and configured to supply one or more precursor gases to facilitate deposition of layers of material onto the substrates. The chemical deposition systems may further include a foreline having various conduits, including a foreline network and a common foreline outlet conduit, fluidically connected with the processing chamber to evacuate process gases and materials from the processing chamber.SUMMARY

[0003] Details of one or more implementations of the subject matter described in this specification are set forth in the accompanying drawings and the description below. Other features, aspects, and advantages will become apparent from the description, the drawings, and the claims. The following, non-limiting implementations are considered part of the disclosure;Attorney Docket No. LAM1P076WO-12099-1WO other implementations will be evident from the entirety of this disclosure and the accompanying drawings as well.

[0004] In some implementations, a semiconductor processing system is provided. The system includes a processing chamber defining an interior volume, a plurality of exhaust ports in a bottom of the processing chamber, and a foreline network fluidically connected to the exhaust ports and the interior volume, configured to receive process gases from the interior volume, and having a first branch extending from a first exhaust port and terminating at a first junction, a second branch extending from a second exhaust port and terminating at the first junction, and a third branch extending from, and downstream of, the first junction and configured to fluidically connect with an exhaust. The third branch may be downstream of the first branch, the second branch, and the first junction, the first branch, the second branch, and the third branch may include aluminum tubing with nickel-plating, and the nickel-plating may be on interior surfaces of the first branch, the second branch, and the third branch.

[0005] In some implementations, the first branch and the second branch may be the same length.

[0006] In some implementations, the first branch and the second branch may be symmetric with respect to the first junction.

[0007] In some implementations, the first branch may be a plurality of first tubing conduits, the second branch may have a plurality of second tubing conduits, and each first tubing conduit and each second tubing conduit may include nickel-plated aluminum.

[0008] In some such implementations, the third branch may have a plurality of third conduits, and each third conduit may include nickel-plated aluminum.

[0009] In some such implementations, each first conduit and second conduit may be an aluminum tube with nickel-plating on the interior surface of the aluminum tube.

[0010] In some such implementations, the first tubing conduits may be welded to each other with full-penetration welds, and the second tubing conduits may be welded to each other with fullpenetration welds.

[0011] In some implementations, the third branch may include a first portion and a second portion, the first portion may have a first end at the first junction and a second end downstream of the first junction and having a first connection flange, and the second portion may have a first end having a second connection flange directly connected to the first connection flange, and a second end downstream of the first end.

[0012] In such implementations, the foreline network may further include a fourth branch extending from a third exhaust port and terminating at a second junction, a fifth branch extending from a fourth exhaust port and terminating at the second junction, and a sixth branch extending from the second junction and terminating at a third junction downstream of the second junction,Attorney Docket No. LAM1P076WO-12099-1WO the sixth branch may be downstream of the fourth branch, the fifth branch, and the second junction, the fourth branch, the fifth branch, and the sixth branch may include nickel-plated aluminum, the fourth branch, the fifth branch, and the sixth branch may have interior surfaces with the nickel-plating, and the third branch may terminate at the third junction.

[0013] In some such implementations, the first branch, the second branch, the fourth branch, and the fifth branch may be the same length.

[0014] In some such implementations, the first branch and the second branch may have the same configuration as the fourth branch and the fifth branch.

[0015] In some such implementations, the first branch, the second branch, and the third branch may be symmetric to the fourth branch, the fifth branch, and the sixth branch, respectively, with respect to the third junction.

[0016] In some such implementations, the foreline network may further include a seventh branch fluidically connected to, and downstream of, the third junction.

[0017] In some further such implementations, the first branch, the second branch, the fourth branch, and the fifth branch may have an inner diameter of about 2.5 inches, and the seventh branch may include a tubing conduit with an inner diameter of about 4 inches.

[0018] In some further such implementations, the third junction may have an inner diameter of about 3 inches.

[0019] In some implementations, the first branch and the second branch may have an inner diameter of about 2.5 inches.

[0020] In some such implementations, the system may further include a plurality of first heaters thermally connected to the first branch and the second branch and configured to maintain a temperature of the first branch and the second branch from about 130 °C to about 220 °C.

[0021] In some such implementations, the nickel-plating may include nickel and at least 10.5% phosphorous.

[0022] In some such implementations, the nickel-plating may be electroless nickel-plating.

[0023] In some such implementations, the first branch, the second branch, and the third branch may be without bellows.

[0024] In some such implementations, the system may further include a plurality of kidney plates that each have a respective port. A first kidney plate may be welded the first branch, connected to the first exhaust port, and fluidically interposed between the first exhaust port and the first branch, and a second kidney plate may be welded the second branch, connected to the second exhaust port, and fluidically inteiposed between the second exhaust port and the first branch.Attorney Docket No. LAM1P076WO-12099-1WO

[0025] In some implementations, a foreline network for semiconductor processing may be provided. The foreline network may include a first branch having a first end, a second end, and a plurality of first tubular sections spanning between the first end and the second end, a second branch having a third end, a fourth end, and a plurality of second tubular sections spanning between the third end and the fourth end, a first junction, and a third branch having a plurality of third tubular sections. The first end may be configured to fluidically connect with a first exhaust port of a semiconductor processing chamber, the third end may be configured to fluidically connect with a second exhaust port of the semiconductor processing chamber, the first end may be upstream of the second end, the second end may terminate at the first junction, the third end may be upstream of the fourth end, the fourth end may terminate at the first junction, the third branch may extend from, and be downstream of, the first junction and may be configured to fluidically connect with an exhaust, the first tubular sections, the second tubular sections, and the third tubular sections may include aluminum with nickel-plating, and the nickel-plating may be on interior surfaces of the first branch, the second branch, and the third branch.

[0026] In some implementations, the first branch and the second branch may be the same length.

[0027] In some implementations, the first branch and the second branch may be symmetric with respect to the first junction.

[0028] In some implementations, the first tubular sections may be welded to each other with fullpenetration welds, the second tubular sections may be welded to each other with full-penetration welds, and the third tubular sections may be welded to each other with full-penetration welds.

[0029] In some implementations, the foreline network may further include a fourth branch having a fifth end, a sixth end, and a plurality of fourth tubular sections spanning between the fifth end and the sixth end, a fifth branch having a seventh end, an eighth end, and a plurality of fifth tubular sections spanning between the seventh end and the eighth end, a second junction; and a sixth branch having a plurality of sixth tubular sections. The fifth end may be configured to fluidically connect with a third exhaust port of the semiconductor processing chamber, the seventh end may be configured to fluidically connect with a fourth exhaust port of the semiconductor processing chamber, the fifth end may be upstream of the sixth end, the sixth end may terminate at the second junction, the seventh end may be upstream of the eighth end, the eighth end may terminate at the second junction, the sixth branch may extend from, and be downstream of, the second junction and may be configured to fluidically connect with the exhaust, the fourth tubular sections, the fifth tubular sections, and the sixth tubular sections may include aluminum with nickel-plating, and the nickel-plating may be on interior surfaces of the fourth branch, the fifth branch, and the sixth branch.Attorney Docket No. LAM1P076WO-12099-1WO

[0030] In some such implementations, the foreline network may further include a third junction, wherein the sixth branch and the third branch terminate at the third junction.

[0031] In some further such implementations, the first branch, the second branch, and the third branch may be symmetric to the fourth branch, the fifth branch, and the sixth branch, respectively, with respect to the third junction.

[0032] In some further such implementations, the foreline network may further include a seventh branch fluidically connected to, and downstream of, the third junction.

[0033] In some additional such implementations, the first branch, the second branch, the fourth branch, and the fifth branch may have an inner diameter of about 2.5 inches, and the seventh branch may include a tubing conduit with an inner diameter of about 4 inches.

[0034] In some such implementations, the first branch, the second branch, the fourth branch, and the fifth branch may be the same length.

[0035] In some such implementations, the first branch and the second branch may have the same configuration as the fourth branch and the fifth branch.

[0036] In some implementations, the first branch and the second branch may have an inner diameter of about 2.5 inches.

[0037] In some implementations, the foreline network may further include a plurality of first heaters thermally connected to the first branch and the second branch and configured to maintain a temperature of the first branch and the second branch from about 130 °C to about 220 °C.

[0038] In some implementations, the nickel-plating may include nickel and at least 10.5% phosphorous.

[0039] In some implementations, the nickel-plating may be electroless nickel-plating.

[0040] In some implementations, the first branch, the second branch, and the third branch may be without bellows.

[0041] In some implementations, the foreline network may further include a plurality of kidney plates that each have a respective port. A first kidney plate may be welded the first end of the first branch and configured to connect to the first exhaust port of the semiconductor processing chamber, and a second kidney plate may be welded the third end of the second branch and configured to connect to the second exhaust port of the semiconductor processing chamber.

[0042] Additional aspects will be set forth in the detailed description which follows, and, in part, will be apparent from the disclosure, or may be learned by practice of the disclosed embodiments and / or the claimed subject matter.

[0043] The foregoing general description and the following detailed description are illustrative and explanatory and are intended to provide further explanation of the claimed subject matter.Attorney Docket No. LAM1P076WO-12099-1WO BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Various embodiments disclosed herein are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings, in which like reference numerals refer to similar elements.

[0045] Figure 1 depicts a semiconductor processing system according to various implementations.

[0046] Figure 2 depicts a schematic diagram of another example semiconductor processing system.

[0047] Figure 3 depicts a simplified magnified schematic of the system of Figure 2.

[0048] Figure 4 which depicts the simplified magnified schematic of the system of Figure 3.

[0049] Figure 5 depicts an off-angle view of a connection plate and a first branch of the foreline network.

[0050] Figure 6 schematically illustrates a multi-station processing tool according to some embodiments.DETAILED DESCRIPTION

[0051] Semiconductor processing tools have one or more processing chambers in which various processing operations are performed, such as deposition, etching, or both. Some processing chambers may be considered a single chamber such that they have a single station where only one substrate is processed at a time. Other processing chambers may be considered multi-station chambers such that they have two or more stations where two or more substrates can be processed at the same time. This can include two, three, four, five, six, or eight stations in a single chamber. During the processing operations in the processing chambers, deposition precursors, reactants, gases, contaminants, particulates, byproducts and the like flow through the processing chamber and may be exhausted from the processing chamber through a foreline to an exhaust system. The foreline, which may also be referred to as a foreline network, may have a plurality of conduits or branches configured to flow gas from multiple exhaust ports of the processing chamber to a single outlet of the foreline network. The single outlet may be referred to as the common foreline outlet conduit. The various foreline conduits in the foreline network may join to each other until they reach the single common foreline outlet conduit that is fluidically connected to the exhaust system.

[0052] As the deposition precursors, reactants, gases, contaminants, particulates, and byproducts exit the processing chamber and flow through the foreline network, unwanted deposition and reactions of such materials occurs within the foreline. This can include unwanted deposition on the conduits in the foreline which can corrode and damage the foreline network. This can alsoAttorney Docket No. LAM1P076WO-12099-1WO include damage to the foreline such as corrosion, back streaming of contaminates into the chamber, perforation of the foreline and atmospheric intrusion into the foreline, impingement of moving components and interfaces within the foreline network, and flow restriction which can adversely impact uniformity on wafer. As new and emerging chemistries and processes are used in processing chambers, the unwanted deposited material can cause greater and faster damage to the foreline network, as well as cause unwanted back flow of contaminants from the foreline network into the chamber and onto the wafer.

[0053] For example, new semiconductor processes are beginning to use chemistries having halogens, including non-fluorine halogens, and the use of these such chemistries has resulted in new and surprising challenges and effects that led to the development of new and unconventional foreline configurations provided herein. The halogen source may be any halogen-containing (e.g., X-containing, where X is fluorine (F), chlorine (Cl), bromine (Br), or iodine (I)) compound that exists in vapor phase at the processing temperature. Examples include hydrogen fluoride (HF), hydrogen chloride (HC1), hydrogen bromide (HBr), fluorine (Ez), chlorine (CE), bromine (Br2), chlorine trifluoride (CIF3), nitrogen trifluoride (NF3), nitrogen trichloride (NCI3), and nitrogen tribromide (NB13). In some implementations, the halogen source is an organohalide, with examples including fluoroform (CHF3), chloroform (CHCI3), bromoform (CHBrs), carbon tetrafluoride (CF4), carbon tetrachloride (CCI4), carbon tetrabromide (CBu), perfluorobutene (C4F8), and perchlorobutene (CtCls). In some implementations, the halogen source is a silicon halide, with examples including silicon tetrafluoride (SiE0, silicon tetrachloride (SiCU), silicon tetrabromide (SiB ), and compounds that include SiXe such as I FSiXt,. In some implementations, the halogen source is a metal halide, metal oxyhalide (MetalOxClx), or adduct formed on chamber material surfaces or with process reactants or byproducts, with examples including molybdenum hexafluoride (MoFe), molybdenum hexachloride (MoCk), molybdenum hexabromide (MoBre), tungsten hexafluoride (WFe), tungsten hexachloride (WCle), tungsten hexabromide (WBre), titanium tetrafluoride (TiF4), titanium tetrachloride (TiCk), titanium tetrabromide (TiBr4), zirconium fluoride (ZrF4), zirconium chloride (ZrCU), and zirconium bromide (ZrBri). Metal halides may be used in some embodiments to selectively etch metal oxides.

[0054] Many elements of semiconductor processing chambers are made of stainless steel, such as stainless-steel alloys, including the conduits of foreline networks. As used herein, “stainless- steel” is used to generally describe any stainless-steel material, including stainless-steel alloys. Components of semiconductor processing tools are made of stainless steel for various reasons, such as their ability to withstand some chemistries, low cost, and ease of manufacturing. For instance, many foreline networks have a plurality of tubing conduits made of stainless-steelAttorney Docket No. LAM1P076WO-12099-1WO alloys that are bent to various curves and connected together in order to route exhaust gases on 3- dimensional circuitous pathways to a common exhaust underneath the processing chamber. Stainless steel, and stainless-steel alloys, are easy to bend into the desired shapes, curves, and bend radii. Despite the benefits of using stainless-steel in foreline networks, the present inventors discovered that such stainless-steel foreline networks were unable to withstand the new chemistries and processes, and caused numerous undesirable effects as detailed below.

[0055] The thermal properties of stainless steel were unable to adequately prevent material deposition in the foreline network for the new semiconductor processes that are using chemistries having halogens and non-fluorine halogens. As the process gases having byproducts and other materials used for these processes are evacuated through the foreline networks, they condense and become deposited in areas of the foreline network. In some instances, attempts are made to prevent this condensation by heating the surfaces of the foreline network to a temperature above the condensation temperature of the materials in the foreline network. However, stainless-steel has poor thermal conductivity and therefore poor thermal uniformity which prevents the foreline network from being uniformly heated. As a result of thermal nonuniformity within the stainless-steel foreline network, cold spots occur in the foreline network and unwanted material condenses and deposits on these cold spots.

[0056] While this deposited material is unwanted in the foreline network for numerous reasons, a newly discovered reason is that this deposited material in the foreline can desorb or flake off the foreline and travel back into the processing and chamber and onto wafers in the chamber. This was discovered after thorough and extensive research and experiments were performed. Initially, some iron and other metal contaminants were discovered on the wafer and their origin was unknown. Many elements upstream of the wafer, such as in the chemistry delivery system with the showerhead, delivery conduits, and valves, and in the chamber itself, such as the pedestal and chamber walls were researched and investigated, but the source of these iron and other metal contaminants could not be found. The foreline network was examined after all these other elements of the semiconductor processing system were investigated, and it was found that the material deposited in the foreline network was desorbing, or flaking off, and flowing upstream into the processing chamber and onto the wafer. This material was also becoming deposited despite significant efforts to heat the stainless-steel foreline network. These byproducts and deposited materials can also impinge on valve material, change intended flow characteristics of the system, and cause clogging etc.

[0057] The material properties of stainless-steel foreline networks are also unable to withstand the new halogen chemistries, the resulting byproducts, and the chemical reactions that occur within the chamber and foreline network. For instance, it was discovered that the depositedAttorney Docket No. LAM1P076WO-12099-1WO material in the stainless-steel foreline network had the capability to cause extensive and accelerated corrosion and damage to the stainless-steel conduits. When processing chemistries have halogens, including fluorine and non-fluorine halogens, the resulting material deposited in the foreline network are heavy metal salts that contain halogens. When these heavy metal salts react with moisture, they form a localized electrolyte that rapidly corrodes stainless-steel and causes localized pitting and corrosion. These heavy metal salts are exposed to moisture in some surprising manners. In some instances, the gases being evacuated through the foreline have a low moisture content, but when the processing is stopped for cleaning, maintenance, or other stoppage, the foreline network is exposed to the environmental atmosphere which has a relatively high moisture content. In other cases, moisture can permeate through O-rings in the system and react with these metal salts forming corrosive byproducts. The deposited heavy metal salts react with the environmental moisture and form the localized electrolyte that rapidly corrodes the stainless-steel foreline network.

[0058] In some other instances, the chamber and processes using halogens and non-fluorine halogens in the chamber have low to no moisture, but the byproducts contain moisture. As these water-containing byproducts are flowed out the chamber through the foreline network, the moisture reacts with the deposited heavy metal salts in the foreline network. These heavy metal salts react with the moisture and form the electrolyte that corrodes and damages the stainless- steel foreline network.

[0059] Further, some stainless steel forelines have bellows for various reasons, such as providing flexibility during foreline installation. While these stainless-steel bellows may provide some benefits, they also result in numerous unwanted effects. For example, the bellows are difficult to heat because of irregular geometry causing increased buildup, have thin wall sections which are more susceptible to corrosive perforation, cannot be electropolished sufficiently to provide resistance against corrosion, trap exhaust and byproduct material which leads to unwanted material deposition in the bellows and consequently corrosion.

[0060] The present inventors discovered after extensive investigation and research that nickel, including some nickel-phosphorous alloys, could withstand the halogens and non-fluorine halogens used in the new processes and also reduce and prevent the unwanted deposition. It was therefore desirable to apply a nickel-plating, such as a nickel-phosphorous alloy plating, to the internal surfaces of the foreline network. However, it was also found that applying a nickel- plating to the stainless-steel tubing of foreline networks was not feasible, practical, or even possible. An electrolytic strike is required to perform nickel-plating of the stainless-steel; chemical or electroless plating is not possible with stainless steel. The electrolytic strikes, sometimes called a Woods strike, removes the native oxide on the stainless-steel and activatesAttorney Docket No. LAM1P076WO-12099-1WO the base metal which allows for the nickel plating to be applied to the stainless-steel. For this electrolytic strike, even distances are required between the electrodes, which are the anode and cathode, with the cathode being the stainless-steel part undergoing the plating process. The electrical current follows the path of least resistance through an electrolyte and for parts with complex geometries, current can flow unequally through the parts and result in uneven plating such that some areas have little to no plating.

[0061] For instance, if there is a long path length and a short path length between the electrode and the part, most or all of the current will flow through the least path of resistance, which is short path, and flow minimally or not at all through the long path. This results in only partial electropolishing which is undesirable since other portions of the part will not receive the electrolytic strike and the native oxide will remain thereon preventing plating. The placement of the electrode around or inside the part is therefore crucial. When electroplating the inside of a tube, the electrode is required to be inserted into the inside of the tube at both an equidistant and coaxial location within the tube. For bent tubes, the electrode must also be bent and follow the curvature and bends of the tube, which is very complex, challenging, and impracticable for some geometries, especially the complex geometries of foreline networks. These electrode requirements make it highly difficult and unpractical to electroplate the inside of a tube. Because of this, it is highly difficult, unpractical, and unreasonable to apply a nickel-plating to the inside of the stainless-steel tubing, such as the bent and straight stainless-steel tubing in foreline networks.

[0062] It was also discovered that it was infeasible and unpractical to electropolish stainless-steel for multiple reasons. For example, stainless-steel may be electropolished to make the material smoother which can increase its corrosion resistance. However, electropolished stainless-steel was found not to have sufficient corrosion resistance to the new and emerging materials, chemistries, and processes being used. Further, electropolishing stainless-steel also requires and electrolytic strike between an anode and cathode (e.g., the part), and for the same reasons as above with electroplating, it is also highly difficult, unpractical, and unreasonable to electropolish stainless-steel.

[0063] For the new foreline networks provided herein, the unconventional and unique material choice of aluminum was made. Many semiconductor processing tools do not use aluminum in foreline networks for numerous reasons. For example, aluminum is expensive, including more expensive than stainless-steel, and very difficult to manufacture into bent tubes. Some aluminum alloys tend to precipitation harden during manufacturing and when forming and bending the tubes, the aluminum tends to wrinkle, fold, crack, and tear. Also, welding aluminum parts together is more complex and challenging than welding stainless -steel parts together. In someAttorney Docket No. LAM1P076WO-12099-1WO instances, aluminum tubes may be welded together by using full-penetration welds that are then ground down to a smooth finish which are additional and time-consuming manufacturing steps. When used for the foreline network, aluminum has advantageous thermal properties and material properties. For instance, aluminum has high thermal conductivity and uniformity such that when aluminum is heated, cold spots do not form like with stainless-steel. By preventing the formation of cold spots, the deposition of unwanted material is also prevented.

[0064] Further, aluminum can be nickel-plated chemically in an electroless manner which is highly feasible and practical. For example, the native oxide on aluminum can be removed chemically, such as by placing the part in a chemical bath, which is easier and less complex than electroplating, which is not needed. Once the native oxide is removed from the aluminum part, a buffer can be applied to prevent oxidation before the plating step. The aluminum can also be plated chemically by placing the aluminum part in a nickel-plating bath. Such chemical plating is electroless which means it does not require an electrolytic strike and insertion of an electrode inside the tubing. The aluminum tubing of the foreline network is also compatible with welding to materials of the processing chamber (which are also aluminum in some instances) and these provide better thermal uniformity in the foreline network as opposed to the bellows. Despite the numerous downsides to using aluminum in foreline networks, the foreline networks provided herein use nickel-plated aluminum because of at least these various advantages of aluminum. Further, aluminum alone and without nickel-plating may not be sufficient to withstand the chemistries and corrosion described herein, and because of this, in some implementations the foreline network may therefore have aluminum with nickel-plating as described herein.

[0065] Figure 1 depicts a semiconductor processing system according to various implementations. The semiconductor processing system 100 may be a chemical deposition system, a chemical vapor deposition (CVD) system, a plasma-enhanced chemical vapor deposition (PECVD) system, an atomic layer deposition (ALD) system, an etching system, an atomic layer etching (ALE) system, or a system configured to perform both deposition and etching. The system 100 has processing chamber 106 with an interior volume 108 and one or more exhaust ports 128 A and 128B on the bottom of the processing chamber 106. The system 100 also includes two processing stations 119A and 119B that each have one or more wafer supports 110 positioned within the interior volume 108 and configured to support corresponding substrates 112 during one or more semiconductor processing operations (e.g., a deposition process, a preparation process, a heat treatment process, etc.) conducted in the interior volume 108. In this implementation, the semiconductor processing system 100 further includes one or more showerheads 114 (e.g., a flush-mount showerhead, a chandelier-type showerhead, etc.)Attorney Docket No. LAM1P076WO-12099-1WO positioned above the wafer support 110; and the showerheads 114 may be used to flow one or more process gases onto the substrate 112 during processing operations.

[0066] The system 100 also includes a foreline network 102 configured to receive process gases and materials from the exhaust ports 128 A and 128B of the processing chamber 106. The foreline network 102 has a plurality of conduits that are fluidically connected to a single common outlet conduit, i.e., foreline common outlet 105. As shown, the foreline network 102 has a first branch 124A, encompassed by a dotted shape, that defines a flow path from one exhaust port 128 A to a first junction 111 where two or more branches join. The first branch 124A has a first tubing conduit 126A, which may be a linear section, and a second tubing conduit 126B, which may be a curved, bent, or non-linear section. The foreline network 102 has a second branch 124B that defines a flow path from another exhaust port 128B to the first junction 111. The second branch 124B has a plurality of second tubing conduits including a second tubing conduit 126C that is linear and another tubing conduit 126D that is non-linear. Gas flow from the process chamber enters the foreline network 102 in the exhaust ports and flows through the interior 118 of the foreline network 102 to the common outlet 105 and to a foreline outlet 120 and the exhaust system 122 as indicated by the arrows.

[0067] As can be seen in Figure 1, the first branch 124A spans from the first exhaust port 128 A and terminates at the first junction 111. The second branch 124B spans from the second exhaust port 128B and also terminates at the first junction 11 1. The common outlet 105 may be considered a third branch (also labeled 105) that is fluidically connected to the first junction 111 and fluidically downstream of the first branch 124A, the second branch 124B, and the first junction 111. In some instances, like illustrated in Figure 1, the first branch 124A and the second branch 124B are the same length. In some instances, as also illustrated in Figure 1, the first branch 124A and the second branch 124B are symmetric to each other with respect to the first junction 111. By having the same length, by being symmetric to each other, or both, the foreline network 102 is advantageously configured to provide symmetric and uniform flow into the foreline network which provide uniform flow, pressure, and some conditions in the chamber interior volume 108.

[0068] The foreline network 102 includes foreline walls defining an interior 118 fluidically connected with the interior volume 108 of the processing chamber 106. As provided herein, the foreline network 102 and its conduits are comprised of aluminum or an aluminum alloy. In some instances, the foreline network 102 may be considered to have aluminum tubing or aluminum ally tubing. The foreline network 102 does not comprise stainless-steel or a stainless-steel alloy. The foreline network 102 also has aluminum tubes with nickel-plating on the interior surfaces of the aluminum conduits (which may also be considered aluminum tubing). In some instances, theAttorney Docket No. LAM1P076WO-12099-1WO nickel-plating comprises only nickel and in other implementations the nickel-plating comprises both nickel and phosphorous. The amount of phosphorous may be at least 10.5% phosphorous, at least 10.75% phosphorous, at least 11% phosphorous, at least 11.25% phosphorous, at least 11.5% phosphorous, and may range, in some instances, from 10.5% to about 15% phosphorous.

[0069] The nickel-plating may be applied to the aluminum conduits in an electroless plating manner, such as chemical plating in which the aluminum conduit is placed in a plating bath. The chemical plating of the aluminum conduits may also include removing an oxide layer chemically, such as by placing the aluminum conduits in a chemical bath that removes the oxide layer on the aluminum conduits. Some implementations may also apply a buffer layer onto the aluminum conduits after removing the oxide layer. In some implementations, the buffer layer may comprise zinc.

[0070] The foreline network 102 may have a plurality of tubing conduits that are connected to each other. In some implementations, the aluminum tubing conduits with nickel-plating are connected to each other using full-penetration welds that are ground down before or after plating. For example, in Figure 1 the first branch 124 A has a plurality of first tubing conduits that have tubular shapes. As illustrated, the first tubing conduit 126A is a linear section and the other first tubing conduit 126B is curved or bent. Although the first branch 124A is illustrated with one linear conduit and one bent conduit, the first branch 124A may have other configurations, such as multiple bent sections, multiple linear sections, or both. Each of these first tubing conduits 126A and 126B have internal surfaces with nickel-plating. The first tubing conduits 126A and 126B are connected to each other at a first seam 130A. As mentioned above, this first seam 130A may represent a full-penetration weld connecting the first tubing conduits 126 A and 126B. The tubing conduit 126A is also connected to the first junction 111 at a second seam 130B which may also be a full-penetration weld.

[0071] As also seen in Figure 1, the second branch 124B has a plurality of second tubing conduits that have tubular shapes. The second tubing conduit 126D may be a non-linear section that this tubing conduit is curved or bent and the other second tubing conduit 126C may be a linear section that is straight. Each of these second tubing conduits 126C and 126D have internal surfaces with nickel-plating. The second tubing conduits 126C and 126D are connected to each other at a third seam 130C that represents a full-penetration weld connecting the second tubing conduits 126C and 126D. The second tubing conduit 126C is also connected to the first junction 111 at a fourth seam 130D which may also be a full-penetration weld. Also shown in Figure 1 is a tubing conduit of the third branch 105 is connected to the first junction 111 at a fifth seam 130E which may also be a full-penetration weld.Attorney Docket No. LAM1P076WO-12099-1WO

[0072] Although the first and second branches are illustrated with only two tubing conduits, other implementations may have more tubing conduits such as three, four, five, six, seven, or eight, for instance. Similarly, the third branch 105 is shown as only having one tubing conduit, and other implementations may have more than one tubing conduit, such as two, three, four, five, six, seven, or eight, for instance.

[0073] In some embodiments, the systems and foreline networks provided herein may have more branches than illustrated in Figure 1. For example, additional branches may be used when a processing chamber has more than two processing stations and / or more than two exhaust ports. Figure 2 depicts a schematic diagram of another example semiconductor processing system. The system 200 shown in Figure 2, as well as that in Figures 3 and 4 below, is somewhat similar to the semiconductor processing system 100 of Figure 1. To avoid undue repetition, elements in the implementation of Figure 2, as well as with Figures 3 and 4, that are analogous to elements shown in Figure 1 are called out with numbers that share the same last two digits as those analogous elements in Figure 1. Thus, the discussion provided above with respect to the elements of the implementation of Figure 1 will be understood to be equally applicable to the analogous elements in Figures 2-4 unless indicated otherwise. In the interest of conciseness, discussion of these elements that would be redundant of earlier discussion herein of similar elements is not provided, with the understanding that the earlier discussion of such elements is applicable to these similar elements in Figures 2-4.

[0074] The semiconductor processing system 200 of Figure 2 is a multi-station processing chamber with four processing stations in the chamber interior volume 208. As noted herein, multi-station chambers are not limited to four stations and may include fewer or more stations, such as 3, 5, 6, 7, 8, 9, or 10 stations in one chamber. In Figure 2, the processing chamber 206 has four processing stations in the chamber interior volume 208 and for clarity, these stations are not labeled. The four showerheads 214A-214D of each of the four stations are identified along with four exhaust ports 228A-228D. The foreline network 202 branches into more segments that define flow paths fluidically connected with and leading to different exhaust ports 228. The segments include multiple linear sections 238A that each define a linear portion of the corresponding flow path through the foreline network 202 and multiple non-linear sections 238B (e.g., arcuate elbow sections) that each define a non-linear portion of the corresponding flow path through the foreline network 202. As provided above, the foreline network 202 and its tubing conduits are comprised of aluminum or an aluminum alloy with a nickel-plating that may comprise phosphorous on the interior surfaces of the tubing conduits. The foreline network 202 does not comprise stainless-steel or a stainless-steel alloy.Attorney Docket No. LAM1P076WO-12099-1WO

[0075] In Figure 2, one or more processing operations are being performed in the four stations in the interior volume 208. The one or more processing operations may be depositing material onto substrates via CVD, PECVD, ALD, for example, or etching material from substrates, such as via ALE. During these depositing and / or etching operations, the process bases and byproducts are shown flowing from the chamber interior 208 through each of the respective exhaust ports 228A-228D into the foreline network 202 and to the exhaust system. This flow of materials and gases is illustrated with the arrows. Additional or alternative features of the foreline network 202 are illustrated in Figure 3.

[0076] Figure 3 depicts a simplified magnified schematic of the system of Figure 2. Here, the system 300 may be the same as that of system 200 and for clarity, the references begin with 3 instead of 2. As seen in Figure 3, the portion of the system 300 includes the chamber interior 308, four exhaust ports 328A-328D, four processing stations that are represented by boxes 219A-219D, and the foreline network 302 fluidically connected to the four exhaust ports 328 A- 328D. Figure 3 depicts the system 300 during the one or more processing operations, such as depositing or etching. The gases from the chamber interior volume 308 are represented by the white arrows and as can be seen, these gases enter the foreline network 302 via exhaust ports 328A-328D; these may be the same as exhaust ports 128A-128D in Figure 1 and exhaust ports 228A-228D in Figure 2. The foreline network 302 has a plurality of branches that define various flow paths, such as a first branch 324A spanning between the first exhaust port 328A and first junction 311 A and second branch 324B spanning between the second exhaust port 328B and the first junction 311 A. Downstream of the first junction 311 A is the third branch 324C that spans between the first junction 311 A and a third junction 311 C, and is configured to be fluidically connected to the exhaust system 322. Downstream from this third junction 311 C is the common outlet conduit 305. For clarity, the junctions 311 A-311C are not encircled and they are illustrated as T shapes.

[0077] The foreline network 302 of Figure 3 also has a fourth branch 324D spanning between the third exhaust port 328C and a second junction 31 IB and a fifth branch 324E spanning between the fourth exhaust port 328D and the second junction 31 IB. Downstream of the second junction 31 IB is a sixth branch 324F that spans between the second junction 31 IB and the third junction 311C, and is configured to be fluidically connected to the exhaust system 322.

[0078] In some implementations, as illustrated in Figure 3, the branches each have a plurality of tubing conduits that are welded together with full-penetration welds. Similar to Figure 1, the first branch 324A has a plurality of first tubing conduits 326A and 326B that are welded together at seam 330A with a full penetration weld, and tubing conduit 326A is welded together at seam 33OB with the first junction 311A. The second branch 324B has a plurality of second tubingAttorney Docket No. LAM1P076WO-12099-1WO conduits 326C and 326D that are welded together at seam 330C with a full penetration weld, and tubing conduit 326C is welded together at seam 330D with the first junction 311 A. The third branch 324C has a plurality of third tubing conduits 326E and 326F that are welded together at seam 330E with a full penetration weld, tubing conduit 326F is welded together at seam 33OF with the first junction 311A, and tubing conduit 326E is welded together at seam 330N with the third junction 311 C.

[0079] In some implementations, the fourth branch 324D has a plurality of fourth tubing conduits 326G and 326H that are welded together at seam 330G with a full penetration weld, and tubing conduit 326G is welded together at seam 330H with the second junction 31 IB. The fifth branch 324E has a plurality of fifth tubing conduits 3261 and 326J that are welded together at seam 3301 with a full penetration weld, and tubing conduit 3261 is welded together at seam 330J with the second junction 31 IB. The sixth branch 324F has a plurality of sixth tubing conduits 326K and 326L that are welded together at seam 330K with a full penetration weld, tubing conduit 326L is welded together at seam 330L with the second junction 31 IB, and tubing conduit 326K is welded together at seam 330M with the third junction 311C. The common outlet conduit 305 is also seen welded to the third junction 311 at seam 3300 with a full-penetration weld. Although not illustrated here, the common outlet conduit 305 may also have a plurality of tubing conduits that are welded together with full-penetration welds.

[0080] In some implementations, foreline network 302 may be configured to provide symmetric flow paths from all the exhaust ports 328A-328D to the exhaust system. This configuration may include having the first branch 324A, the second branch 324B, the fourth branch 324D, and the fifth branch 324E the same lengths as each other. In some instances, this configuration may include the first branch 324A and the second branch 324B being symmetric to each other with respect to the first junction 311 A. This symmetry may include the branches providing the same, the substantially same, or mirror images of each other between their respective exhaust port 328A and 328B, and the first junction 311 A. This may include the first branch 324A and the second branch 324B having the same length, diameters, bends, bend radii, pathway, or a combination thereof. Similarly, the fourth branch 324D and the fifth branch 324E may be symmetric to each other with respect to the second junction 31 IB. In some instances, the third branch 324C and the sixth branch 324F may also be symmetric to each other with respect to the third junction 311C. In some implementations, the first, second, and third branches 324A-324C may be symmetric to the fourth, fifth, and sixth branches 324D-324F with respect to the third junction 311C. This may include the first, second, and third branches 324A-324C providing the same flow paths, length of tubing, diameters, bends, bend radii, pathways or a combinationAttorney Docket No. LAM1P076WO-12099-1WO thereof, as the fourth, fifth, and sixth branches 324D-324F. This symmetry is illustrated in Figures 2-4.

[0081] In some implementations, some aspects of the branches of the foreline network 302 may change diameter. Figure 4 depicts the simplified magnified schematic of the system of Figure 3, but with some noted differences and some removed features and labels for clarity. Here, the first, second, fourth and fifth branches 324A, 324B, 324D, and 324E may all have a first inner diameter DI that is the same. This includes each of the tubing conduits 326A-326D and 326G- 326J all having the same first inner diameter DI. The first inner diameter DI may, in some instances, be about 2 inches to about 4 inches, including 2 inches, 2.25 inches, 2.5 inches, 2.75 inches, 3 inches, 3.25 inches, or 3.5 inches, for example. In some implementations, the third branch 324C and the sixth branch 324F may also have the same diameter as each other which may, in some instances, be the first inner diameter DI. The inner diameter of the foreline network 302 may increase at some point downstream of the first, second, fourth and fifth branches 324A, 324B, 324D, and 324E, such as at the third junction 311C. By having the same inner diameter of the first, second, third, fourth, fifth, and sixth branches 324A-324F, flow symmetry within the foreline network 302 may be provided.

[0082] At the third junction 311C, the inner diameter may increase to a second inner diameter D2 larger than the first inner diameter. In some implementations, the second inner diameter D2 may be about 2.5 inches to about 6 inches, including 2.5 inches, 3 inches, 3.5 inches, 4 inches, 4.5 inches, 5 inches, or 5.5 inches, for example. The foreline network 302 may have another diameter increase in some instances after the third junction 311 C which may include the common outlet conduit 305 having a third inner diameter D3 greater than the first inner diameter DI and the second inner diameter D2. In some implementations, the second inner diameter D2 may be about 3 inches to about 7 inches, including 3 inches, 3.5 inches, 4 inches, 4.5 inches, 5 inches, 5.5 inches, 6 inches, or 6.5 inches, for example.

[0083] As mentioned above, some implementations of the foreline network may have various connections between tubing conduits and to the chamber itself. To assist with installing aspects of the foreline network 302 onto a processing tool, two tubing conduits of the foreline network may be connected together with connection flanges, such as square connection flanges, instead of full penetration welds. Figure 4 illustrates two connection flanges 332A and 332B that connect tubing conduit 326L and 326K, in this example. Each connection flange 332A and 332B may be made of aluminum with nickel-plating as provided here, and may be welded to a respective tubing conduit with full penetration welds. These connection flanges 332A and 332B may be bolted or screwed to each other.Attorney Docket No. LAM1P076WO-12099-1WO

[0084] In some implementations, the foreline network fluidically connects with the processing chamber without the use of bellows. As provided above, by having the foreline network comprised of aluminum instead of stainless -steel, the foreline network may be directly welded to a component, such as a kidney plate, that is then directly connected to the processing chamber. This connection means provides a sealed connection without bellows thereby reducing or eliminating material deposition at the connection point between the chamber and the foreline network. In Figure 4, the system 300 has first connection plate 334A, such as a kidney plate, connected to the chamber 306 and the first exhaust port 328A. The first connection plate 334A has a hole or port through which the gases and materials from the chamber interior 308 into the first branch 324A of the foreline network 302. The first connection plate 334A may be welded to the bottom of the chamber 306 and the first branch 324A may also be welded to the connection plate 334A. Figure 5 depicts an off-angle view of a connection plate and a first branch of the foreline network. Here, the connection plate 334A has a partially curved, or kidney, shape and a port or hole 336 which is configured to fluidically connect with an exhaust port of the processing chamber. The first branch 324A is seen connected to the connection plate 334A.

[0085] Referring back to Figure 4, the system 300 has three other connection plates 334B-334D that are connected to the second branch 324B, the fourth branch 324D, and the fifth branch 324E, respectively. The connection plates 334C-334D are also fluidically connected to the exhaust ports 328C-328D, respectively, and fluidically interposed between the exhaust ports and the respective branches. Gas and materials flow from the chamber interior 308 through each exhaust port 328A-328D, through each connection plate 334A-334D, and into the second branch 324B, the fourth branch 324D, and the fifth branch 324E, respectively. As mentioned, in some implementations, the connection plates 334A-334D are welded to the chamber 306 and to the respective branches 324A-324D.

[0086] The foreline network 302 may also have a plurality of heaters configured to heat the tubular conduits of each of the branches. For example, referring back to the system 100 of Figure 1, a first heater 138 A is in thermal contact with tubing conduit 126A, and a second heater 138B is in thermal contact with tubing conduit 126B of the first branch 124A. These first and second heaters 138A and 138B are configured to maintain the temperature of each respective tubing conduit to a desired temperature range, such as about 120 °C to about 220 °C, which may include about 120 °C, about 130 °C, about 140 °C, about 150 °C, about 160 °C, about 170 °C, about 180 °C, about 190 °C, about 200 °C, or about 210 °C, for example. Although not illustrated, heaters may be positioned on the other tubing conduits of the other branches, such as the second branch 124B in Figure 1, conduit 105, as well as branches 324A-324F and 305 of system 300 in Figures 3 and 4.Attorney Docket No. LAM1P076WO-12099-1WO

[0087] In some implementations, alternative or additional features of the foreline may be provided. Referring to Figure 4, the first branch 324A may have a first end 340A, a second end 342A, and the plurality of tubular sections 326A and 326B spanning between the first end 340A and the second end 342A. The first end 340A is upstream of the second end 342A and is configured to fluidically connect with the exhaust port 328 A of the chamber 306. The second end 342A is fluidically connected to the first junction 31 1 A. Similarly, the second branch 324B may have a first end 340B, a second end 342B, and the plurality of tubular sections 326C and 326D spanning between the first end 340B and the second end 342B. The first end 340B is upstream of the second end 342B and is configured to fluidically connect with the exhaust port 328B of the chamber 306. The second end 342B is fluidically connected to the first junction 311 A. The third branch 324C also has a first end 340C, a second end 342C, and the plurality of tubular sections 326E and 326F spanning between the first end 340C and the second end 342C. The first end 340C is upstream of the second end 342C and is configured to fluidically connect with the exhaust system. The third branch 324C is also downstream of the first junction 311 A.

[0088] The fourth and fifth branches 324D and 324E may be similarly configured with first ends fluidically connected to the exhaust ports 328C and 328D, respectively, and upstream of second ends that are fluidically connected to the second junction 31 IB. The sixth branch 324F may also have a first end fluidically connected the second junction 31 IB and upstream of a second end that is fluidically connected to the third junction 311 C. For clarity, these first and second ends are not shown in the Figure 4.

[0089] As provided above, all of the branches in Figures 1-4 have tubing elements made of aluminum, or an aluminum alloy, that have nickel-plating on their respective inside surfaces. In some instances, the nickel-plating may comprise phosphorous as provided herein.

[0090] Figure 6 schematically illustrates a multi-station processing tool according to some embodiments. Here, the multi-station processing tool 600 has an inbound load lock 602 and an outbound load lock 604, either or both of which may comprise a remote plasma source. A robot 606, at atmospheric pressure, is configured to move wafers from a cassette loaded through a pod 608 into inbound load lock 602 via an atmospheric port 610. A wafer is placed by the robot 606 on a pedestal 612 in the inbound load lock 602, the atmospheric port 610 is closed, and the load lock is pumped down. Where the inbound load lock 602 comprises a remote plasma source, the wafer may be exposed to a remote plasma treatment in the load lock prior to being introduced into a processing chamber 614. Further, the wafer also may be heated in the inbound load lock 602 as well, for example, to remove moisture and adsorbed gases. Next, a chamber transport port 616 to processing chamber 614 is opened, and another robot (not shown) places the wafer into the reactor on a pedestal of a first station shown in the reactor for processing. While theAttorney Docket No. LAM1P076WO-12099-1WO embodiment depicted in Figure 6 includes load locks, it will be appreciated that, in some embodiments, direct entry of a wafer into a process station may be provided.

[0091] The depicted processing chamber 614 comprises four process stations, numbered from 1 to 4 in the embodiment shown in Figure 6. Each station has a heated pedestal (shown at 618 for station 1), and gas line inlets. It will be appreciated that in some embodiments, each process station may have different or multiple purposes. While the depicted processing chamber 614 comprises four stations, it will be understood that a processing chamber according to the present disclosure may have any suitable number of stations. For example, in some embodiments, a processing chamber may have five or more stations, while in other embodiments a processing chamber may have three or fewer stations.

[0092] Figure 6 also depicts an embodiment of a wafer handling system 690 for transferring wafers within processing chamber 614. In some embodiments, wafer handling system 690 may transfer wafers between various process stations and / or between a process station and a load lock. It will be appreciated that any suitable wafer handling system may be employed. Nonlimiting examples include wafer carousels and wafer handling robots. Figure 6 also depicts an embodiment of a system controller 650 employed to control process conditions and hardware states of process tool 600. System controller 650 may include one or more memory devices 656, one or more mass storage devices 654, and one or more processors 652. Processor 652 may include a CPU or computer, analog and / or digital input / output connections, stepper motor controller boards, etc.

[0093] In some embodiments, system controller 650 controls all of the activities of process tool 600. System controller 650 executes system control software 658 stored in mass storage device 654, loaded into memory device 656, and executed on processor 652. System control software 658 may include instructions for controlling the timing, mixture of gases, chamber and / or station pressure, chamber and / or station temperature, purge conditions and timing, wafer temperature, RF power levels, RF frequencies, substrate, pedestal, chuck and / or susceptor position, and other parameters of a particular process performed by process tool 600. System control software 658 may be configured in any suitable way. For example, various process tool component subroutines or control objects may be written to control operation of the process tool components necessary to carry out various process tool processes in accordance with the disclosed methods. System control software 658 may be coded in any suitable computer readable programming language.

[0094] In some embodiments, system control software 658 may include input / output control (IOC) sequencing instructions for controlling the various parameters described above. For example, each phase of a PEALD process may include one or more instructions for execution byAttorney Docket No. LAM1P076WO-12099-1WO system controller 650. The instructions for setting process conditions for a PEALD process phase may be included in a corresponding PEALD recipe phase. In some embodiments, the PEALD recipe phases may be sequentially arranged, so that all instructions for a PEALD process phase are executed concurrently with that process phase.

[0095] Other computer software and / or programs stored on mass storage device 654 and / or memory device 656 associated with system controller 650 may be employed in some embodiments. Examples of programs or sections of programs for this purpose include a substrate positioning program, a process gas control program, a pressure control program, a heater control program, and a plasma control program.

[0096] A substrate positioning program may include program code for process tool components that are used to load the substrate onto pedestal 618 and to control the spacing between the substrate and other parts of process tool 600.

[0097] A process gas control program may include code for controlling gas composition and flow rates and optionally for flowing gas into one or more process stations prior to deposition in order to stabilize the pressure in the process station. The process gas control program may include code for controlling gas composition and flow rates within any of the disclosed ranges. A pressure control program may include code for controlling the pressure in the process station by regulating, for example, a throttle valve in the exhaust system of the process station, a gas flow into the process station, etc. The pressure control program may include code for maintaining the pressure in the process station within any of the disclosed pressure ranges.

[0098] A heater control program may include code for controlling the current to a heating unit that is used to heat the substrate. Alternatively, the heater control program may control delivery of a heat transfer gas (such as helium) to the substrate. The heater control program may include instructions to maintain the temperature of the substrate within any of the disclosed ranges.

[0099] A plasma control program may include code for setting RF power levels and frequencies applied to the process electrodes in one or more process stations, for example using any of the RF power levels disclosed herein. The plasma control program may also include code for controlling the duration of each plasma exposure.

[0100] In some embodiments, there may be a user interface associated with system controller 650. The user interface may include a display screen, graphical software displays of the apparatus and / or process conditions, and user input devices such as pointing devices, keyboards, touch screens, microphones, etc.

[0101] In some embodiments, parameters adjusted by system controller 650 may relate to process conditions. Non-limiting examples include process gas composition and flow rates, temperature, pressure, plasma conditions (such as RF power levels, frequency, and exposureAttorney Docket No. LAM1P076WO-12099-1WO time), etc. These parameters may be provided to the user in the form of a recipe, which may be entered utilizing the user interface.

[0102] Signals for monitoring the process may be provided by analog and / or digital input connections of system controller 650 from various process tool sensors. The signals for controlling the process may be output on the analog and digital output connections of process tool 600. Non-limiting examples of process tool sensors that may be monitored include mass flow controllers, pressure sensors (such as manometers), thermocouples, etc. Appropriately programmed feedback and control algorithms may be used with data from these sensors to maintain process conditions.

[0103] Any suitable chamber may be used to implement the disclosed embodiments. Example deposition apparatuses include, but are not limited to, apparatus from the ALTUS® product family, the VECTOR® product family, and / or the SPEED® product family, each available from Lam Research Corp., of Fremont, California, or any of a variety of other commercially available processing systems. Two or more of the stations may perform the same functions. Similarly, two or more stations may perform different functions. Each station can be designed / configured to perform a particular function / method as desired.

[0104] In some implementations, a controller 650 is part of a system, which may be part of the above-described examples. Such systems can include semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms for processing, and / or specific processing components (a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems. The controller 650, depending on the processing requirements and / or the type of system, may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings in some systems, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and / or load locks connected to or interfaced with a specific system.

[0105] Broadly speaking, the controller may be defined as electronics having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuitsAttorney Docket No. LAM1P076WO-12099-1WO (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system. The operational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0106] The controller, in some implementations, may be a part of or coupled to a computer that is integrated with, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process. In some examples, a remote computer (e.g. a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus as described above, the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.

[0107] Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any otherAttorney Docket No. LAM1P076WO-12099-1WO semiconductor processing systems that may be associated or used in the fabrication and / or manufacturing of semiconductor wafers.

[0108] As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and / or load ports in a semiconductor manufacturing factory.

[0109] Broadly speaking, the controller may be defined as electronics having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system, with process gases flowing from the processing chamber 106 and through the foreline network 102 where material from the flow of process gases is deposited. The operational parameters may, in some examples, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0110] For the purposes of this disclosure, the term “fluidically connected” is used with respect to volumes, plenums, holes, etc., that may be connected with one another, either directly or via one or more intervening components or volumes, in order to form a fluidic connection, similar to how the term “electrically connected” is used with respect to components that are connected together to form an electric connection. The term “fluidically interposed,” if used, may be used to refer to a component, volume, plenum, or hole that is fluidically connected with at least two other components, volumes, plenums, or holes such that fluid flowing from one of those other components, volumes, plenums, or holes to the other or another of those components, volumes, plenums, or holes would first flow through the “fluidically interposed” component before reaching that other or another of those components, volumes, plenums, or holes. For example, if a pump is fluidically interposed between a reservoir and an outlet, fluid that flowed from the reservoir to the outlet would first flow through the pump before reaching the outlet. The term "fluidically adjacent," if used, refers to placement of a fluidic element relative to another fluidicAttorney Docket No. LAM1P076WO-12099-1WO element such that there are no potential structures fluidically interposed between the two elements that might potentially interrupt fluid flow between the two fluidic elements. For example, in a flow path having a first valve, a second valve, and a third valve placed sequentially therealong, the first valve would be fluidically adjacent to the second valve, the second valve fluidically adjacent to both the first and third valves, and the third valve fluidically adjacent to the second valve.

[0111] The term “between,” as used herein and when used with a range of values, is to be understood, unless otherwise indicated, as being inclusive of the start and end values of that range. For example, between 1 and 5 is to be understood to be inclusive of the numbers 1, 2, 3, 4, and 5, not just the numbers 2, 3, and 4.

[0112] The foregoing description is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in a variety of forms. Therefore, while this disclosure includes particular examples, the true scope of the disclosure should not be so limited since other modifications will become apparent upon a study of the drawings, the specification, and the following claims. For purposes of clarity, the same reference numbers will be used in the drawings to identify similar elements. As used herein, the phrase at least one of A, B, and C should be construed to mean a logical (A, B, or C), using a non-exclusive logical OR. It should be understood that one or more steps within a method may be executed in different order (or concurrently) without altering the principles of the present disclosure.

[0113] It is to be understood that the above disclosure, while focusing on a particular example implementation or implementations, is not limited to only the discussed example, but may also apply to similar variants and mechanisms as well, and such similar variants and mechanisms are also considered to be within the scope of this disclosure. For example, the above disclosure is directed to at least, but not exclusively, the following numbered implementations.

[0114] Implementation 1: A semiconductor processing system, comprising: a processing chamber defining an interior volume; a plurality of exhaust ports in a bottom of the processing chamber; and a foreline network fluidically connected to the exhaust ports and the interior volume, configured to receive process gases from the interior volume, and having: a first branch extending from a first exhaust port and terminating at a first junction, a second branch extending from a second exhaust port and terminating at the first junction, andAttorney Docket No. LAM1P076WO-12099-1WO a third branch extending from, and downstream of, the first junction and configured to fluidically connect with an exhaust, wherein: the third branch is downstream of the first branch, the second branch, and the first junction, the first branch, the second branch, and the third branch comprise aluminum tubing with nickel-plating, and the nickel-plating is on interior surfaces of the first branch, the second branch, and the third branch.

[0115] Implementation 2: The system of implementation 1, wherein the first branch and the second branch are the same length.

[0116] Implementation 3: The system of implementation 1 or implementation 2, wherein the first branch and the second branch are symmetric with respect to the first junction.

[0117] Implementation: 4: The system of any of implementations 1 to 3, wherein: the first branch has a plurality of first tubing conduits, the second branch has a plurality of second tubing conduits, and each first tubing conduit and each second tubing conduit comprises nickel-plated aluminum.

[0118] Implementation 5: The system of implementation 4, wherein: the third branch has a plurality of third conduits, and each third conduit comprises nickel-plated aluminum.

[0119] Implementation 6: The system of implementation 4, wherein each first conduit and second conduit is an aluminum tube with nickel-plating on the interior surface of the aluminum tube.

[0120] Implementation 7: The system of implementation 4, wherein: the first tubing conduits are welded to each other with full-penetration welds, and the second tubing conduits are welded to each other with full-penetration welds.

[0121] Implementation 8: The system of any of implementations 1 to 7, wherein: the third branch comprises a first portion and a second portion, the first portion has a first end at the first junction and a second end downstream of the first junction and having a first connection flange, and the second portion has a first end having a second connection flange directly connected to the first connection flange, and a second end downstream of the first end.

[0122] Implementation 9: The system of any of implementations 1 to 8, wherein: the foreline network further comprises:Attorney Docket No. LAM1P076WO-12099-1WO a fourth branch extending from a third exhaust port and terminating at a second junction, a fifth branch extending from a fourth exhaust port and terminating at the second junction, and a sixth branch extending from the second junction and terminating at a third junction downstream of the second junction, the sixth branch is downstream of the fourth branch, the fifth branch, and the second junction, the fourth branch, the fifth branch, and the sixth branch comprise nickel-plated aluminum, the fourth branch, the fifth branch, and the sixth branch have interior surfaces with the nickel-plating, and the third branch terminates at the third junction.

[0123] Implementation 10: The system of implementation 9, wherein the first branch, the second branch, the fourth branch, and the fifth branch are the same length.

[0124] Implementation 11 : The system of implementation 9, wherein the first branch and the second branch have the same configuration as the fourth branch and the fifth branch.

[0125] Implementation 12: The system of implementation 9, wherein the first branch, the second branch, and the third branch are symmetric to the fourth branch, the fifth branch, and the sixth branch, respectively, with respect to the third junction.

[0126] Implementation 13: The system of implementation 9, wherein the foreline network further comprises a seventh branch fluidically connected to, and downstream of, the third junction.

[0127] Implementation 14: The system of implementation 13, wherein: the first branch, the second branch, the fourth branch, and the fifth branch have an inner diameter of about 2.5 inches, and the seventh branch comprises a tubing conduit with an inner diameter of about 4 inches.

[0128] Implementation 15: The system of implementation 14, wherein the third junction has an inner diameter of about 3 inches.

[0129] Implementation 16: The system of any of implementations 1 to 15, wherein the first branch and the second branch have an inner diameter of about 2.5 inches.

[0130] Implementation 17: The system of any of implementations 1 to 16, further comprising a plurality of first heaters thermally connected to the first branch and the second branch and configured to maintain a temperature of the first branch and the second branch from about 130 °C to about 220 °C.Attorney Docket No. LAM1P076WO-12099-1WO

[0131] Implementation 18: The system of any of implementations 1 to 17, wherein the nickel- plating comprises nickel and at least 10.5% phosphorous.

[0132] Implementation 19: The system of any of implementations 1 to 18, wherein the nickel- plating is electroless nickel-plating.

[0133] Implementation 20: The system of any of implementations 1 to 19, wherein the first branch, the second branch, and the third branch are without bellows.

[0134] Implementation 21 : The system of any of implementations 1 to 20, further comprising a plurality of kidney plates that each have a respective port, wherein: a first kidney plate is welded the first branch, connected to the first exhaust port, and fluidically interposed between the first exhaust port and the first branch, and a second kidney plate is welded the second branch, connected to the second exhaust port, and fluidically interposed between the second exhaust port and the first branch.

[0135] Implementation 22: A foreline network for semiconductor processing, the foreline network comprising: a first branch having a first end, a second end, and a plurality of first tubular sections spanning between the first end and the second end; a second branch having a third end, a fourth end, and a plurality of second tubular sections spanning between the third end and the fourth end: a first junction; and a third branch having a plurality of third tubular sections, wherein: the first end is configured to fluidically connect with a first exhaust port of a semiconductor processing chamber, the third end is configured to fluidically connect with a second exhaust port of the semiconductor processing chamber, the first end is upstream of the second end, the second end terminates at the first junction, the third end is upstream of the fourth end, the fourth end terminates at the first junction, the third branch extends from, and is downstream of, the first junction and is configured to fluidically connect with an exhaust, the first tubular sections, the second tubular sections, and the third tubular sections comprise aluminum with nickel-plating, and the nickel-plating is on interior surfaces of the first branch, the second branch, and the third branch.Attorney Docket No. LAM1P076WO-12099-1WO

[0136] Implementation 23: The foreline network of implementation 22, wherein the first branch and the second branch are the same length.

[0137] Implementation 24: The foreline network of implementation 22 or 23, wherein the first branch and the second branch are symmetric with respect to the first junction.

[0138] Implementation 25: The foreline network of any of implementations 22 to 24, wherein: the first tubular sections are welded to each other with full-penetration welds, the second tubular sections are welded to each other with full-penetration welds, and the third tubular sections are welded to each other with full-penetration welds.

[0139] Implementation 26: The foreline network of any of implementations 22 to 25, further comprising: a fourth branch having a fifth end, a sixth end, and a plurality of fourth tubular sections spanning between the fifth end and the sixth end; a fifth branch having a seventh end, an eighth end, and a plurality of fifth tubular sections spanning between the seventh end and the eighth end; a second junction; and a sixth branch having a plurality of sixth tubular sections, wherein: the fifth end is configured to fluidically connect with a third exhaust port of the semiconductor processing chamber, the seventh end is configured to fluidically connect with a fourth exhaust port of the semiconductor processing chamber, the fifth end is upstream of the sixth end, the sixth end terminates at the second junction, the seventh end is upstream of the eighth end, the eighth end terminates at the second junction, the sixth branch extends from, and is downstream of, the second junction and is configured to fluidically connect with the exhaust, the fourth tubular sections, the fifth tubular sections, and the sixth tubular sections comprise aluminum with nickel-plating, and the nickel-plating is on interior surfaces of the fourth branch, the fifth branch, and the sixth branch.

[0140] Implementation 27: The foreline network of implementation 26, further comprising a third junction, wherein the sixth branch and the third branch terminate at the third junction.

[0141] Implementation 28: The foreline network of implementation 27, wherein the first branch, the second branch, and the third branch are symmetric to the fourth branch, the fifth branch, and the sixth branch, respectively, with respect to the third junction.Attorney Docket No. LAM1P076WO-12099-1WO

[0142] Implementation 29: The foreline network of implementation 27, further comprising a seventh branch fluidically connected to, and downstream of, the third junction.

[0143] Implementation 30: The foreline network of implementation 29, wherein: the first branch, the second branch, the fourth branch, and the fifth branch have an inner diameter of about 2.5 inches, and the seventh branch comprises a tubing conduit with an inner diameter of about 4 inches.

[0144] Implementation 31 : The foreline network of implementation 26, wherein the first branch, the second branch, the fourth branch, and the fifth branch are the same length.

[0145] Implementation 32: The foreline network of implementation 26, wherein the first branch and the second branch have the same configuration as the fourth branch and the fifth branch.

[0146] Implementation 33: The foreline network of any of implementations 22 to 32, wherein the first branch and the second branch have an inner diameter of about 2.5 inches.

[0147] Implementation 34: The foreline network of any of implementations 22 to 33, further comprising a plurality of first heaters thermally connected to the first branch and the second branch and configured to maintain a temperature of the first branch and the second branch from about 130 °C to about 220 °C.

[0148] Implementation 35: The foreline network of any of implementations 22 to 34, wherein the nickel-plating comprises nickel and at least 10.5% phosphorous.

[0149] Implementation 36: The foreline network of any of implementations 22 to 35, wherein the nickel-plating is electroless nickel-plating.

[0150] Implementation 37: The foreline network of any of implementations 22 to 36, wherein the first branch, the second branch, and the third branch are without bellows.

[0151] Implementation 38: The foreline network of any of implementations 22 to 37, further comprising a plurality of kidney plates that each have a respective port, wherein: a first kidney plate is welded the first end of the first branch and configured to connect to the first exhaust port of the semiconductor processing chamber, and a second kidney plate is welded the third end of the second branch and configured to connect to the second exhaust port of the semiconductor processing chamber.

Claims

Attorney Docket No. LAM1P076WO-12099-1WOCLAIMSWhat is claimed is:

1. A semiconductor processing system, comprising: a processing chamber defining an interior volume; a plurality of exhaust ports in a bottom of the processing chamber; and a foreline network fluidically connected to the exhaust ports and the interior volume, configured to receive process gases from the interior volume, and having: a first branch extending from a first exhaust port and terminating at a first junction, a second branch extending from a second exhaust port and terminating at the first junction, and a third branch extending from, and downstream of, the first junction and configured to fluidically connect with an exhaust, wherein: the third branch is downstream of the first branch, the second branch, and the first junction, the first branch, the second branch, and the third branch comprise aluminum tubing with nickel-plating, and the nickel-plating is on interior surfaces of the first branch, the second branch, and the third branch.

2. The system of claim 1, wherein the first branch and the second branch are the same length.

3. The system of claim 1, wherein the first branch and the second branch are symmetric with respect to the first junction.

4. The system of claim 1, wherein: the first branch has a plurality of first tubing conduits, the second branch has a plurality of second tubing conduits, and each first tubing conduit and each second tubing conduit comprises nickel-plated aluminum.

5. The system of claim 4, wherein: the third branch has a plurality of third conduits, and each third conduit comprises nickel-plated aluminum.

6. The system of claim 4, wherein each first conduit and second conduit is an aluminum tube with nickel-plating on the interior surface of the aluminum tube.

7. The system of claim 4, wherein: the first tubing conduits are welded to each other with full-penetration welds, andAttorney Docket No. LAM1P076WO-12099-1WO the second tubing conduits are welded to each other with full-penetration welds.

8. The system of claim 1, wherein: the third branch comprises a first portion and a second portion, the first portion has a first end at the first junction and a second end downstream of the first junction and having a first connection flange, and the second portion has a first end having a second connection flange directly connected to the first connection flange, and a second end downstream of the first end.

9. The system of claim 1 , wherein: the foreline network further comprises: a fourth branch extending from a third exhaust port and terminating at a second junction, a fifth branch extending from a fourth exhaust port and terminating at the second junction, and a sixth branch extending from the second junction and terminating at a third junction downstream of the second junction, the sixth branch is downstream of the fourth branch, the fifth branch, and the second junction, the fourth branch, the fifth branch, and the sixth branch comprise nickel-plated aluminum, the fourth branch, the fifth branch, and the sixth branch have interior surfaces with the nickel-plating, and the third branch terminates at the third junction.

10. The system of claim 9, wherein the first branch, the second branch, the fourth branch, and the fifth branch are the same length.

11. The system of claim 9, wherein the first branch and the second branch have the same configuration as the fourth branch and the fifth branch.

12. The system of claim 9, wherein the first branch, the second branch, and the third branch are symmetric to the fourth branch, the fifth branch, and the sixth branch, respectively, with respect to the third junction.

13. The system of claim 9, wherein the foreline network further comprises a seventh branch fluidically connected to, and downstream of, the third junction.

14. The system of claim 13, wherein: the first branch, the second branch, the fourth branch, and the fifth branch have an inner diameter of about 2.5 inches, and the seventh branch comprises a tubing conduit with an inner diameter of about 4 inches.Attorney Docket No. LAM1P076WO-12099-1WO15. The system of claim 14, wherein the third junction has an inner diameter of about 3 inches.

16. The system of any one of claims 1-15, further comprising a plurality of first heaters thermally connected to the first branch and the second branch and configured to maintain a temperature of the first branch and the second branch from about 130 °C to about 220 °C.

17. The system of any one of claims 1-15, wherein the nickel-plating comprises nickel and at least 10.5% phosphorous.

18. The system of any one of claims 1-15, wherein the first branch, the second branch, and the third branch are without bellows.

19. The system of any one of claims 1-15, further comprising a plurality of kidney plates that each have a respective port, wherein: a first kidney plate is welded the first branch, connected to the first exhaust port, and fluidically interposed between the first exhaust port and the first branch, and a second kidney plate is welded the second branch, connected to the second exhaust port, and fluidically interposed between the second exhaust port and the first branch.

20. A foreline network for semiconductor processing, the foreline network comprising: a first branch having a first end, a second end, and a plurality of first tubular sections spanning between the first end and the second end; a second branch having a third end, a fourth end, and a plurality of second tubular sections spanning between the third end and the fourth end; a first junction; and a third branch having a plurality of third tubular sections, wherein: the first end is configured to fluidically connect with a first exhaust port of a semiconductor processing chamber, the third end is configured to fluidically connect with a second exhaust port of the semiconductor processing chamber, the first end is upstream of the second end, the second end terminates at the first junction, the third end is upstream of the fourth end, the fourth end terminates at the first junction, the third branch extends from, and is downstream of, the first junction and is configured to fluidically connect with an exhaust, the first tubular sections, the second tubular sections, and the third tubular sections comprise aluminum with nickel-plating, andAttorney Docket No. LAM1P076WO-12099-1WO the nickel-plating is on interior surfaces of the first branch, the second branch, and the third branch.

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