Method of producing an optoelectronic component and optolectronic component

Abstract

A method of producing an optoelectronic component (10, 20, 30, 40, 50, 60) comprises the following method steps. A carrier (101) is provided with a holographic medium (104) attached to atop side (102) of the carrier (101). An optoelectronic semiconductor chip (105) is arranged at a bottom side (103) of the carrier (101) and the optoelectronic semiconductor chip (105) is connected to the carrier (101) rigidly. The optoelectronic semiconductor chip (105) is designed to emit electromagnetic radiation. A hologram is generated by illuminating the holographic medium (104). The hologram is designed as an optical component for electromagnetic radiation emitted by the optoelectronic semiconductor chip (105).

Description

[0001] METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOLECTRONIC COMPONENT DESCRIPTION

[0002] The present invention refers to a method of producing an optoelectronic component and an optoelectronic component.

[0003] From the state of the art, it is known to generate holograms which can be used as optical elements comprising specific optical functions for optoelectronic components. For example, a hologram can comprise an optical functionality which is equivalent to a lens or a prism.

[0004] For small optoelectronic components, aligning them repeatedly with high accuracy and precision is a common problem. Also, a glue shrinkage can occur for small optoelectronic components which affects a position of an optical element. Apart from that, dependent on a material of grippers used to arrange optical elements, a transfer of excessive heat to the optical element or a deformation of optical elements due to a mechanical load can occur during the assembly. This can cause a significant performance decrease for the optoelectronic component.

[0005] Furthermore, for complex optical functions, the assembly process might lead to multiple optical elements being stacked one above the other, with a buildup of tolerances. All of this will affect the optical quality as well as the size of the final optoelectronic component. Additionally, small optical modules need short focal lengths, which requires a high precision placement and quality of an optoelectronic component in front of the

[0006] sensing / emitting element.

[0007] An objective of the present invention is to specify an improved method of producing an optoelectronic component and to provide an improved optoelectronic component. This objective is solved by a method of producing an optoelectronic component and an optoelectronic component comprising the features of the respective independent claims. Various embodiments are specified in dependent claims.

[0008] The method of producing an optoelectronic component comprises the following method steps. A carrier comprising a bottom side and a top side opposite the bottom side is provided. A holographic medium is attached to the top side of the carrier. An optoelectronic semiconductor chip is arranged at the bottom side of the carrier, and the optoelectronic semiconductor chip is connected to the carrier rigidly, in other words, a rigid connection between the optoelectronic semiconductor chip and the carrier is produced. More particularly, the optoelectronic semiconductor chip can be rigidly connected to the bottom side of the carrier. The optoelectronic semiconductor chip is designed to emit electromagnetic radiation. The carrier is transparent for electromagnetic radiation emitted by the optoelectronic semiconductor chip. The holographic medium is photosensitive to electromagnetic radiation emitted by the optoelectronic semiconductor chip. A hologram is generated by illuminating the holographic medium. Writing “illuminating” in this text can, more specifically, be referred to as “irradiating”. The hologram is formed by recording an interference pattern of a reference beam and an object beam of electromagnetic radiation emitted by the optoelectronic semiconductor chip and interfering with each other in the region of the photosensitive holographic medium. The hologram is designed as an optical component for electromagnetic radiation emitted by the optoelectronic semiconductor chip.

[0009] Holography is based on the recording of the interference pattern of the reference beam and the object beam in the holographic medium. The recorded interference pattern is called a hologram. The hologram can comprise any optical functionality. A hologram can also be used to reconstruct a three-dimensional light field, i.e. holography enables the generation of three-dimensional images and therefore can be applied in virtual and augmented reality applications.

[0010] The hologram comprises phase and intensity information of the electromagnetic radiation used to record it. In contrast, in photography a generated image only comprises intensity information (black and white photography) or intensity and frequency information (colour photography).

[0011] The hologram can be read out by diffraction of electromagnetic radiation emitted by the optoelectronic semiconductor chip at the recorded interference pattern. The electromagnetic radiation used to read out the hologram comprises a wavelength which is similar to or identical to a wavelength of the reference beam and the object beam used to generate the hologram.

[0012] When we write of electromagnetic radiation interfering “in the region of the photosensitive holographic medium” and of beams interfering with each other “in the region of the photosensitive holographic medium”, respectively, we want to say, more particularly, that the interfering takes place within the photosensitive holographic medium. I.e. the interfering takes place inside the photosensitive holographic medium. This does not exclude that the electromagnetic radiation and the beams, respectively, are, in addition, interfering also outside the photosensitive holographic medium.

[0013] When we write that the hologram is designed as “an optical component for electromagnetic radiation emitted by the optoelectronic semiconductor chip”, we want to say, more particularly, that the hologram is designed to receive and diffract electromagnetic radiation emitted by the optoelectronic semiconductor chip”, in particular wherein, in the optoelectronic component, the optoelectronic semiconductor chip is configured and arranged to emit its electromagnetic radiation to impinge on the hologram to be diffracted by the hologram.

[0014] When we write that an item, such as the optoelectronic semiconductor chip, is “arranged at the bottom side of the carrier”, we want to say, more particularly, that the item is arranged at a side of the carrier which extends from the bottom side and away from the carrier, or, in other words, that the item is arranged in a half-space extending from the bottom side and away from the carrier.

[0015] A hologram is produced by illumination of the holographic medium which is photosensitive, i.e. sensitive to electromagnetic radiation emitted by the optoelectronic semiconductor chip. The holographic medium can also be called a holographic film or a holographic layer. There are different types of holograms such as transmission holograms, reflection holograms, volume holograms, surface holograms, amplitude holograms and phase holograms. A surface hologram only comprises a two-dimensional interference pattern. In a volume hologram, the photosensitive layer comprises a thickness which allows to record more information. An amplitude hologram generates diffracted light comprising an amplitude which is proportional to the intensity of the recorded light.

[0016] A phase hologram comprises a phase grating. A phase hologram can be produced by generating a transparent surface relief, as an example, which causes phase shifts due to a varying thickness of the hologram. Also, volume phase holograms (VPH) are known which combine the two described types of holograms. Typically, a VPH can be thicker than a standard phase hologram. In this case, a modulated index of refraction across the VPH is causing diffraction instead of a surface relief.

[0017] In an embodiment, the hologram is designed as a VPH.

[0018] In an embodiment the holographic medium is photosensitive and comprises a modulated index of refraction across the top side of the carrier according to the interference pattern. The optoelectronic semiconductor chip is the light source used to generate the hologram. The optoelectronic semiconductor chip is in particular designed to emit coherent electromagnetic radiation. The optoelectronic semiconductor chip can be designed as a laser, e.g., it can be designed as a vertical cavity surface emitting laser (VCSEL).

[0019] Electromagnetic radiation emitted by the optoelectronic semiconductor chip can be split into a reference beam and an object beam, which can be used to illuminate the photosensitive holographic medium and record an optical function in the holographic medium. After the initial recording, the exposed holographic medium can act as the optical element for the optoelectronic semiconductor chip of the final optoelectronic component. Once the hologram has been recorded, the holographic medium remains attached to the top side of the carrier, and is rigidly connected to the light source (i.e. to the optoelectronic semiconductor chip) and will not be removed anymore.

[0020] The optoelectronic semiconductor chip can thus be designed to read out the hologram by emission of a reconstruction beam and diffraction of the reconstruction beam at the hologram. Depending on the specific interference pattern recorded in the holographic medium, the reconstruction beam is diffracted such that a resulting diffraction pattern provides a desired optical functionality such as, e.g., collimation, divergence, convergence, freeform, etc.

[0021] The final system (final optoelectronic component) is auto-aligned, as the photosensitive holographic medium attached to the top side of the carrier and the optoelectronic semiconductor chip connected rigidly to the bottom side of the carrier are connected with each other via the carrier rigidly. After recording the hologram, the holographic medium remains attached to the top side of the earner and the optoelectronic semiconductor chip remains connected rigidly to the bottom side of the carrier. In other words, the optoelectronic component is meant to maintain the attachment of the holographic medium to the top side of the carrier and the rigid connection between the optoelectronic semiconductor chip and the bottom side of the carrier; i.e. throughout the lifetime of the optoelectronic component, the attachment of the holographic medium to the top side of the carrier and the rigid connection between the optoelectronic semiconductor chip and the bottom side of the carrier are meant to be maintained. Since the hologram is designed as the optical component and provides a desired optical function, the hologram / optical component is auto-aligned with respect to the optoelectronic semiconductor chip.

[0022] In some embodiments, the optoelectronic semiconductor chip is a vertical cavity surface emitting laser (VCSEL). VCSEL are very small lasers and very cost-efficient to produce. However, their small outer dimensions can complicate their handling and more particularly their packaging.

[0023] A complex assembly step of the optical component, in which the optical component has to be aligned with respect to the optoelectronic semiconductor chip, can be omitted. Since the hologram and the optoelectronic semiconductor chip are auto-aligned (by being developed in place using the light source it is intended for), there are no tolerances that need to be considered and / or removed. The development process of the photosensitive material / holographic medium can have some variability, but the complexity is significantly smaller compared to an assembly process where the optical component has to be arranged at the optoelectronic semiconductor chip by placing it at a desired position. Thus, the present method provides an easier and faster assembly process overall, which has the potential to reduce costs and increase yields significantly.

[0024] A possible further advantage resides in the compactness of the solution. The photosensitive holographic medium is typically less bulky than comparable refractive optics, for example. Depending on an orientation of the object beam, the final optical function encoded into the holographic medium can either be of the reflective or the transmissive type. Furthermore, it can be arbitrarily complex. This fabrication process can be used for all kind of coherent sources, as long as the photosensitive layer is sensitive to the source wavelength.

[0025] In particular, the optoelectronic component can be an optoelectronic component for emitting outgoing electromagnetic radiation, wherein the outgoing electromagnetic radiation originates from the electromagnetic radiation emitted by the optoelectronic semiconductor chip. More particularly, the optoelectronic semiconductor chip is configured and arranged to emit its electromagnetic radiation to pass through the carrier to impinge on the hologram to be diffracted by the hologram to produce diffracted electromagnetic radiation, and the outgoing electromagnetic radiation originates from the diffracted electromagnetic radiation. In particular, the electromagnetic radiation emitted by the optoelectronic semiconductor chip impinges on the bottom side, passes through the carrier and exits the carrier through the top side.

[0026] In an embodiment the optoelectronic semiconductor chip is designed to emit electromagnetic radiation at a top emission area facing the bottom side of the carrier. A beam splitter is arranged between the top emission area of the optoelectronic semiconductor chip and the bottom side of the carrier to produce the reference beam and the object beam. The reference beam is directed from the beam splitter in the direction of the holographic medium, in particular immediately (such as merely via the carrier). And the object beam is directed

[0027] - from the beam splitter to an optical element arranged laterally next to the optoelectronic semiconductor chip at the bottom side of the carrier, in particular immediately; and

[0028] - from the optical element to the holographic medium, in particular immediately (optionally via the carrier),

[0029] such that the reference beam and the object beam interfere with each other in the region of the holographic medium.

[0030] The object beam can be tuned into the targeted optical function before being directed to the holographic medium. The beam splitter and the optical element can be removed after generating the hologram. In another embodiment, a plurality of optical elements can be used to direct the object beam to the holographic medium.

[0031] The optical element is arranged laterally next to, i.e. sideways of, the optoelectronic semiconductor chip in particular in order to be able to direct the object beam at the holographic medium where it can interfere with the reference beam.

[0032] When we write that a beam, such as the object beam “is directed from a first item or location to a second item or location, such as from a beam splitter to an optical element”, we want to say, more particularly, that the beam runs from the first item or location to the second item or location, wherein this not necessarily means that the beam runs immediately from the first item or location to the second item or location, but there can be one or more further items, in particular further optical elements in the beam path. For example, the beam can run (immediately) from the first item or location to the further optical element and from the further optical element (immediately) to the second item or location. The further items can have simple optical functions or more complex optical functions, e.g., they can be an aperture or a mirror (flat mirror; or curved mirror) or a lens or a hologram.

[0033] In some embodiments, the optoelectronic semiconductor chip is designed to emit electromagnetic radiation at a top emission area to produce the reference beam and is designed to emit electromagnetic radiation at a bottom emission area to produce the object beam. The bottom emission area is, more particularly, arranged opposite the top emission area and faces away from the bottom side of the carrier.

[0034] In such embodiments, the optoelectronic component can be particularly compact; it can be particularly small. More particularly, a volume taken by the optoelectronic component can be particularly small. This, because the reference beam and the object beam are already generated as separate beams (by the optoelectronic semiconductor chip). Accordingly, a beam splitter for separating a (single) beam emitted from the optoelectronic semiconductor chip into two separate beams (the reference beam and the object beam) is not required, more particularly such a beams splitter is not required for the manufacture of the optoelectronic component and, more particularly, of the hologram.

[0035] In such embodiments, the optoelectronic semiconductor chip can furthermore be attached directly to the carrier, in particular directly to the bottom side of the carrier. For example, the optoelectronic semiconductor chip can be directly attached to the carrier by means of an adhesive, e.g., it can be glued or bonded directly to the bottom side of the carrier. This way, the optoelectronic component can be particularly compact, constructed in a particularly simple way, and its optical quality can be particularly high, because the positioning of the optoelectronic semiconductor chip relative to the holographic medium can be particularly stable, as mechanical connections can be particularly short and rigid.

[0036] In an embodiment the optoelectronic semiconductor chip is designed to emit electromagnetic radiation at a top emission area facing the bottom side of the carrier and at a bottom emission area opposite the top emission area and facing away from the bottom side of the carrier, to produce the reference beam and the object beam; more particularly, the optoelectronic semiconductor chip is designed to emit electromagnetic radiation at the top emission area to produce the reference beam and is designed to emit electromagnetic radiation at the bottom emission area to produce the object beam. The reference beam is directed from the top emission area of the optoelectronic semiconductor chip in the direction of the holographic medium, in particular immediately (such as merely via the earner). And the object beam is directed

[0037] - from the bottom emission area of the optoelectronic semiconductor chip to an optical element arranged at the bottom emission area of the optoelectronic semiconductor chip, in particular immediately,

[0038] - from the optical element to a further optical element, in particular immediately, wherein the further optical element can be arranged laterally next to the optoelectronic semiconductor chip at the bottom side of the carrier, and

[0039] - from the further optical element to the holographic medium, in particular immediately to the holographic medium (optionally via the carrier),

[0040] such that the reference beam and the object beam interfere with each other in the region of the holographic medium. In this embodiment, the optoelectronic semiconductor chip is designed to emit electromagnetic radiation at opposite sides. The bottom side emission is used to provide one or multiple object beams to record the interference pattern of the target optical function, whereas the top side emission provides the reference beam. The two-side-emitting optoelectronic semiconductor chip can allow for short and rigid connections within the optical component, more particularly between the carrier and the optoelectronic semiconductor chip, since no space needs to be provided for a beam splitter, and the interference required for the creation of the optical component (and more particularly of the hologram) can be created by interference of front- and back-side emissions, i.e. of top-and bottom-side emissions.

[0041] The further optical element is arranged laterally next to, i.e. sideways of, the optoelectronic semiconductor chip in order to be able to direct the object beam at the holographic medium where it can interfere with the reference beam.

[0042] When we write that an item, such as the optical element or the further optical element, is “arranged at the bottom emission area of the optoelectronic semiconductor chip”, we want to say, more particularly, that the item is arranged at a bottom emission area side of the optoelectronic semiconductor chip, i.e. at a side of the optical element which extends from the bottom emission area and away from the optoelectronic semiconductor chip.

[0043] In an embodiment the optoelectronic semiconductor chip is designed to emit electromagnetic radiation at a top emission area facing the bottom side of the carrier and at a bottom emission area opposite the top emission area and facing away from the bottom side of the carrier to produce the reference beam and the object beam; more particularly, the optoelectronic semiconductor chip is designed to emit electromagnetic radiation at the top emission area to produce the reference beam and is designed to emit electromagnetic radiation at the bottom emission area to produce the object beam. The reference beam is directed from the top emission area of the optoelectronic semiconductor chip in the direction of the holographic medium immediately. And the object beam is directed from the bottom emission area of optoelectronic semiconductor chip to an optical element, in particular immediately, and

[0044] from the optical element to the holographic medium, in particular immediately to the holographic medium (optionally via the earner),

[0045] such that the reference beam and the object beam interfere with each other in the region of the holographic medium. In this case, an on-axis creation of an optical function is realized (e.g., a collimation), as the optical element is arranged on-axis, i.e. along an axis which is perpendicular to the bottom and the top emission areas of the optoelectronic semiconductor chip. Since the top emission area and the bottom emission area are arranged at opposite sides of the optoelectronic semiconductor chip, and the optical element is arranged at the bottom emission area, a shadowing of the object beam directed from the optical element to the holographic medium by the optoelectronic semiconductor chip and a divergent propagation of electromagnetic radiation in shadowed regions occurs. However, if the optoelectronic semiconductor chip is small compared to the beam size of the object beam, an efficiency decrease by shadowing can be small.

[0046] In some of such embodiments, the optical element is arranged at the bottom emission area of the optoelectronic semiconductor chip. This can in particular be the case when the hologram is a transmissive hologram.

[0047] In some of such embodiments, the optical element is arranged at the top emission area of the optoelectronic semiconductor chip. This can in particular be the case when the hologram is a reflective hologram.

[0048] In an embodiment the method comprises the following additional method step. A further optoelectronic semiconductor chip is arranged at the bottom emission area of the optoelectronic semiconductor chip. The further optoelectronic semiconductor chip is designed to detect electromagnetic radiation emitted by the optoelectronic semiconductor chip at the bottom emission area.

[0049] The further optoelectronic semiconductor chip can be designed as a detector for electromagnetic radiation, more particularly as a detector for an intensity of electromagnetic radiation. The further optoelectronic semiconductor chip can be designed e.g., as a photodiode. The detector can be designed for detecting electromagnetic radiation at a detection side facing the bottom emission area of the optoelectronic semiconductor chip. By providing the detector, the optoelectronic component comprises a sensing system. As an example, the optoelectronic component comprising the detector can be designed for self-mixing interferometry (SMI). Briefly describing SMI, electromagnetic radiation emitted by the optoelectronic semiconductor chip can be reflected from a target object back into a laser cavity of the optoelectronic semiconductor chip. This causes a modulation of an amplitude or intensity (and often also of a frequency) of emitted electromagnetic radiation. The detector can be designed to monitor this modulation, in particular the amplitude or intensity modulation. Self-mixing interferometry can be used, e.g., to determine a distance or a speed of the target object, for example. It can also be used to determine a frequency of a vibrating target object, for example.

[0050] In an embodiment the optoelectronic semiconductor chip is arranged in a housing. The optoelectronic semiconductor chip can be protected by the housing. In another embodiment the further optoelectronic semiconductor chip is also arranged in the housing. In another embodiment the further optoelectronic semiconductor chip is arranged outside the housing at a printed circuit board (PCB), wherein the PCB comprises a through hole, and the further optoelectronic semiconductor chip is arranged in the region of the through hole. Electromagnetic radiation emitted at the bottom emission area of the optoelectronic semiconductor chip can pass through the through hole and impinge on the detection side of the further optoelectronic semiconductor chip. In yet another embodiment the carrier with the holographic medium is arranged in the housing, too.

[0051] In an embodiment the optical element and / or the further optical element is designed to shape the object beam. Thus, a desired optical function, e.g., collimation, divergence, convergence and freeform, can be realised by choosing an appropriate optical element. The optical element is designed to shape the object beam such that the hologram comprises the desired functionality.

[0052] In an embodiment the optoelectronic semiconductor chip is rigidly connected to the carrier by bonding or glueing the optoelectronic semiconductor chip to the bottom side of the carrier or by arranging the optoelectronic semiconductor chip on a connection element connected rigidly to the bottom side of the carrier before generating the hologram.

[0053] The connection element, more particularly, is a part of the optoelectronic component.

[0054] In particular, the optoelectronic semiconductor chip can be attached to the carrier and fixated before generating the hologram. After generating the hologram, the optoelectronic semiconductor chip remains at its position. Thus, the hologram acts as the optical component which is auto-aligned with the optoelectronic semiconductor chip. By illuminating the hologram with the reconstruction beam, the reconstruction beam is diffracted such that the hologram provides a certain, desired optical function. In other words, the optoelectronic semiconductor chip is designed to read out the hologram, to generate a desired beam shape, for example.

[0055] In an embodiment the holographic medium remains attached to the top side of the carrier and optoelectronic semiconductor chip remains rigidly connected to the bottom side of the earner after generating the hologram. In other words, the attachment of the holographic medium to the top side of the carrier and the rigid connection between the optoelectronic semiconductor chip and the bottom side of the carrier are features of the (final) optoelectronic component. These features, more particularly, remain unchanged from the time of forming the hologram and throughout use of the optoelectronic component.

[0056] In an embodiment the optoelectronic semiconductor chip is designed to read out the hologram by illuminating the hologram with a reconstruction beam emitted at the top emission area of the optoelectronic semiconductor chip, wherein the top emission area faces the bottom side of the earner. The reconstruction beam can be emitted at the top emission area of the optoelectronic semiconductor chip, and it can be directed immediately at the hologram (via the carrier). Typically, the reconstruction beam and the reference beam and the object beam comprise similar or identical wavelengths. This is readily the case for the described optoelectronic component, as the identical light source is used, namely the optoelectronic semiconductor chip, for generating the hologram and for reconstructing the hologram. When the hologram comprises a certain optical function according to the specific interference pattern recorded in the holographic medium, this optical function is realized by reading the hologram out.

[0057] In an embodiment a further optoelectronic semiconductor chip is arranged at the bottom side of the carrier and connected to the carrier rigidly. The further optoelectronic semiconductor chip is designed to emit electromagnetic radiation referred to as further electromagnetic radiation. It is not to be confused with the above-described further optoelectronic semiconductor chip which is a detector. The carrier is transparent for the further electromagnetic radiation emitted by the further optoelectronic semiconductor chip. The holographic medium is photosensitive to the further electromagnetic radiation emitted by the further optoelectronic semiconductor chip. A further hologram is generated by illuminating the holographic medium. The further hologram is formed by recording a further interference pattern of a further reference beam and a further object beam of the further electromagnetic radiation emitted by the further optoelectronic semiconductor chip and interfering with each other in the region of the photosensitive holographic medium. The further hologram is designed as a further optical component for the further electromagnetic radiation emitted by the further optoelectronic semiconductor chip or for the electromagnetic radiation emitted by the optoelectronic semiconductor chip.

[0058] The hologram and the further hologram can be generated successively or simultaneously. If they are generated successively, the optoelectronic semiconductor chip can be removed from the earner before the further optoelectronic semiconductor chip is arranged at the bottom side of the earner and connected rigidly to the carrier. In both cases, reference beams and object beams emitted by different optoelectronic semiconductor chips do not interfere with each other. The reference beam does not interfere with the further reference beam and does not interfere with the further object beam. Also, the further object beam does not interfere with the reference beam and does not interfere with the object beam.

[0059] In another embodiment one or more, in particular a plurality of further optoelectronic semiconductor chips is used to generate one or more, in particular a plurality of further holograms. The hologram and the one or more further holograms can be generated in the holographic medium comprising different optical functions. In other words, the holograms are multiplexed in the holographic medium, e.g., spatially multiplexed. The multiplexed holograms can be separated by means of wavelength, i.e. different holograms can be generated and read out by using optoelectronic semiconductor chips which are designed to emit electromagnetic radiation of different wavelengths. Alternatively, the multiplexed holograms can be separated by angle, i.e. different holograms can be generated and read out by using different illumination angels during the generation and the read out of the holograms.

[0060] In an embodiment the hologram and the one or more further holograms are generated successively or simultaneously. In an embodiment the optoelectronic semiconductor chip is designed to read out the hologram and the one or more further optoelectronic semiconductor chips are designed to read out respective one or more further holograms. In an embodiment the optoelectronic semiconductor chip and one or more the further optoelectronic semiconductor chips are designed to read out the hologram and the respective further holograms simultaneously or successively. In yet another embodiment the optoelectronic semiconductor chip or the one of the further optoelectronic semiconductor chips is designed to read out the hologram and the one or more further holograms simultaneously.

[0061] In an embodiment the method comprises the following additional step. An additional hologram is generated by illuminating the holographic medium. The additional hologram is formed by recording an additional interference pattern of an additional reference beam and an additional object beam of electromagnetic radiation emitted by the optoelectronic semiconductor chip and interfering with each other in the region of the photosensitive holographic medium. The additional hologram is designed to reflect electromagnetic radiation emitted by the optoelectronic semiconductor chip into a laser cavity of the optoelectronic semiconductor chip. The additional hologram can be designed as a reflection hologram, e.g., as a reflection VPH, and thus enables feedback in the cavity of the optoelectronic semiconductor chip, if the optoelectronic semiconductor chip is designed as a laser which requires wavelength stabilization.

[0062] The optoelectronic component comprises a earner with a bottom side and a top side opposite the bottom side. A holographic medium is attached to the top side of the earner. An optoelectronic semiconductor chip is arranged at the bottom side of the carrier and connected to the carrier rigidly. The optoelectronic semiconductor chip is designed to emit electromagnetic radiation. The carrier is transparent for electromagnetic radiation emitted by the optoelectronic semiconductor chip. The holographic medium comprises a hologram. The hologram is designed as an optical component for electromagnetic radiation emitted by the optoelectronic semiconductor chip; in other words, the hologram implements an optical function, and the optoelectronic semiconductor chip is designed to read out the hologram by irradiating the hologram with electromagnetic radiation emitted by the optoelectronic semiconductor chip to apply the optical function to electromagnetic radiation emitted by the optoelectronic semiconductor chip.

[0063] The optoelectronic component can, more specifically, be an optoelectronic component for emitting outgoing electromagnetic radiation, wherein the outgoing electromagnetic radiation originates from (and more particularly is) electromagnetic radiation emitted by the hologram in reaction to irradiation of the hologram with electromagnetic radiation originating from the electromagnetic radiation emitted by the optoelectronic semiconductor chip.

[0064] In embodiments, the optoelectronic semiconductor chip is configured and arranged to emit its electromagnetic radiation to pass through the carrier to subsequently impinge on the hologram. More specifically, the electromagnetic radiation emitted by the optoelectronic semiconductor chip can impinge on the bottom side of the carrier, pass through the carrier and exit the earner through the top side of the earner.

[0065] The above-described properties, features and advantages of this invention and the way in which they are achieved will become clearer and more clearly understood in association with the following description of exemplary embodiments which are explained in greater detail in association with the drawings. The drawings show in schematic illustration:

[0066] Fig. 1: A method of producing an optoelectronic component according to a first embodiment, and an optoelectronic component in according to a first embodiment in operation, in side views; Fig. 2: a method of producing an optoelectronic component according to a second embodiment, and an optoelectronic component in according to a second embodiment in operation, in side views;

[0067] Fig. 3: a method of producing an optoelectronic component according to a third embodiment, and an optoelectronic component in according to a third embodiment in operation, in side views;

[0068] Fig. 4: method steps to produce an optoelectronic component according to a fourth embodiment;

[0069] Fig. 5: method steps to produce an optoelectronic component according to a fifth embodiment; and

[0070] Fig. 6: method steps to produce an optoelectronic component according to a sixth embodiment;

[0071] Fig. 7: A method of producing an optoelectronic component according to a variant of the first embodiment, and an optoelectronic component in according to a variant of the first embodiment in operation, in side views;

[0072] Fig. 8: A method of producing an optoelectronic component according to a variant of the second embodiment, and an optoelectronic component in according to a variant of the second embodiment in operation, in side views.

[0073] Fig. 1 schematically shows a method of producing an optoelectronic component 10 according to a first embodiment on the left side and the optoelectronic component 10 according to the first embodiment in operation on the right side. In both cases, side views of the optoelectronic component 10 are shown.

[0074] In a first method step, a carrier 101 comprising a bottom side 102 and a top side 103 opposite the bottom side 102 is provided. The earner 101 can comprise glass, as an example; it can be a glass plate. A holographic medium 104 is attached to the top side 102 of the carrier 101. An optoelectronic semiconductor chip 105 is arranged at the bottom side 103 of the earner 101 and connected to the carrier 101 rigidly. The optoelectronic semiconductor chip 105 is designed to emit electromagnetic radiation. Preferably but not necessarily, the optoelectronic semiconductor chip 105 is designed as a VCSEL. In the embodiment of Fig. 1, the optoelectronic semiconductor chip 105 is designed to emit electromagnetic radiation at a top emission area 106 facing the bottom side 103 of the earner 101. The carrier 101 is transparent for electromagnetic radiation emitted by the optoelectronic semiconductor chip 105, i.e. the earner 101 is at least partially transparent for electromagnetic radiation emitted by the optoelectronic semiconductor chip 105. The earner 101 can comprise another material apart from glass. However, a wavelength of electromagnetic radiation emitted by the optoelectronic semiconductor chip 105 has to be chosen such that the carrier 101 is transparent in the wavelength region of the optoelectronic semiconductor chip, more precisely in the wavelength region of electromagnetic radiation emitted by the optoelectronic semiconductor chip 105. The earner can have a thickness of 100μm to 200μm, for example.

[0075] The holographic medium 104 can also be called a holographic film 104; it can be a film of photosensitive material. The holographic medium 104 is photosensitive to electromagnetic radiation emitted by the optoelectronic semiconductor chip 105, i.e. an index of refraction of the holographic medium 104 can be changed locally by (locally) illuminating the holographic medium 104 with the optoelectronic semiconductor chip 105, more precisely with electromagnetic radiation emitted by the optoelectronic semiconductor chip 105. Thus, a hologram can be generated in the holographic medium 104 by illumination with an interference pattern which is recorded since the index of reflection of the holographic medium 104 is spatially changed according to the interference pattern. The hologram generated in this way is a phase hologram or more particularly as a volume phase hologram. The holographic medium 104 can have a thickness of 3μm to 50μm, as an example. The holographic medium 104 can comprise a photopolymer, as an example. However, the specified thickness and the specified material are only exemplary. The holographic medium 104 can also have a different thickness and / or comprise a different photosensitive material.

[0076] In order to generate a hologram, a reference beam 107 and an object beam 108 have to interfere in the region of the holographic medium 104. In the embodiment of Fig. 1, the reference beam 107 and the object beam 108 are generated by a beam splitter 109. The beam splitter 109 is arranged between the top emission area 106 of the optoelectronic semiconductor chip 105 and the bottom side 103 of the carrier 101 to produce the reference beam 107 and the object beam 108. The optoelectronic semiconductor chip 105 is designed to illuminate the beam splitter 109 by emission of electromagnetic radiation at the top emission area 106. A part of the emitted electromagnetic radiation transmits through the beam splitter 109 to form the reference beam 107. Another part of the emitted electromagnetic radiation is reflected at the beam splitter 109 to form the object beam 108. An optical element 110 is arranged laterally next to the optoelectronic semiconductor chip 105 at the bottom side 103 of the earner 101. The optical element 110 is designed as a hollow mirror, as an example. The reference beam 107 is directed from the beam splitter 109 in the direction of the bottom side 103 of the earner 101 and thus in the direction of the holographic medium 104 immediately (via the carrier 101); and the object beam 108 is directed from the beam splitter 109 to the optical element 110 and from the optical element 110 to the holographic medium 104, such that the reference beam 107 and the object beam 108 interfere with each other in the region of the holographic medium 104. The resulting interference pattern causes the index of refraction of the holographic medium 104 to change in regions of interference maxima.

[0077] The optoelectronic semiconductor chip 104 and the holographic medium 104 shouldn’t move and / or vibrate during the illumination of the holographic medium 104. The holographic medium 104 is attached to the top side 102 of the carrier 101 and fixed to it adhesively and / or by means of an adhesive.

[0078] In the embodiment of Fig. 1, the optoelectronic semiconductor chip 105 is arranged on a connection element 111 connected rigidly to the bottom side 103 of the carrier 101 to provide a rigid connection of the optoelectronic semiconductor chip 105 to the carrier 101.

[0079] The connection element 101 comprises a plateau which is arranged in parallel with the earner, and a connecting part which is arranged obliquely or perpendicularly to the plateau and the carrier 101. The connecting part is connecting the plateau to the bottom side 103 of the carrier rigidly. The optoelectronic semiconductor chip 105 is arranged on the plateau at a side of the plateau facing the bottom side 103 of the carrier 101. The top emission area 106 is facing away from the plateau and facing the bottom side 103 of the carrier 101.

[0080] The holographic medium 104 can remain attached and adhesively connected to the top side 102 of the carrier 101, and optoelectronic semiconductor chip 105 can remain rigidly connected to the bottom side 103 of the carrier 101 after generating the hologram. The beam splitter 109 and the optical element 110 are removed after generating the hologram.

[0081] The optoelectronic semiconductor chip 105 is designed to read out the resulting hologram by illuminating the hologram with a reconstruction beam 112. Fig. 1 shows the manufactured optoelectronic component 10 in operation on the right side.

[0082] The reconstruction beam 112 is emitted at the top emission area 106 of the optoelectronic semiconductor chip 105 and directed towards the hologram recorded in the holographic medium 104. The reconstruction beam 112 is diffracted at the hologram according to the patterned index of refraction of the holographic medium 104, i.e. according to the interference pattern of the reference beam 107 and the object beam 108. By doing this, the hologram is designed as an optical component for electromagnetic radiation emitted by the optoelectronic semiconductor chip 105, i.e. for the reconstruction beam 112. In other words, the hologram is designed to shape electromagnetic radiation emitted by the optoelectronic semiconductor chip 105 according to a desired optical function. The hologram can comprise the optical function of a lens, as an example. The optical element 110 can be designed to shape the object beam 108 in order to generate a desired interference pattern of the reference beam 107 and the object beam.

[0083] Fig. 7 schematically shows method of producing an optoelectronic component 10’ according to a variant of the first embodiment on the left side, and an optoelectronic component 10’ in according to said variant of the first embodiment in operation on the right side. In both cases, side views of the optoelectronic component 10’ are shown line in Fig. 1. But shadings of beams are omitted in Fig. 7.

[0084] We shall focus on the differences, because the methods and the optoelectronic components 10, 10’ of the first embodiment are rather similar. But in this variant of Fig. 7, the hologram is a reflective hologram and not a transmissive one like in Fig. 1. For this, the object beam 108 must be incident on the holographic medium 104 from the other side. This is accomplished by directing the object beam 108 (generated by the beam splitter 109) firstly, too, at the optical element 110, but then not immediately (via the earner 101) at the holographic medium 104 like in Fig. 1, but

[0085] - at a further optical element 114, such as a planar mirror,

[0086] - from there to another further optical element 114’, such as another planar mirror, and

[0087] - from there to yet another further optical element 114”, such as an aperture, before it reaches the holographic medium 104 (without passing through the carrier 101).

[0088] Fig. 2 schematically shows a method of producing an optoelectronic component 20 according to a second embodiment on the left side, and the optoelectronic component 20 according to the second embodiment in operation on the right side. In both cases, side views of the optoelectronic component 20 are shown. The method and the optoelectronic component 20 according to the second embodiment comprise similarities to the method and the optoelectronic component 10 according to Fig. 1, respectively. In the following description, only differences of the method and the optoelectronic component 20 according to the second embodiment to the optoelectronic component 10 according to the first embodiment will be explained, respectively. The reference numerals are maintained for similar or identical elements.

[0089] In contrast to the embodiment of Fig. 1, the optoelectronic semiconductor chip 105 of the embodiment of Fig. 2 is rigidly connected to the carrier 101 by bonding or glueing the optoelectronic semiconductor chip 105 to the bottom side 103 of the carrier 101 before generating the hologram. The connection element 112 is omitted. After generating the hologram, the optoelectronic semiconductor chip 105 also remains rigidly connected to the earner 101.

[0090] Also, instead of using a beam splitter 109 to produce the reference beam 107 and the object beam 108, the optoelectronic semiconductor chip 105 is designed to emit the reconstruction beam 112 at the top emission area 106 and also designed to emit the object beam 108 at a bottom emission area 113 opposite the top emission area 106 and facing away from the bottom side 103 of the carrier 101.

[0091] Due to the two-sided emission design of the optoelectronic semiconductor chip 105, a beam splitter 109 is not required and can be dispensed with. Instead, apart from the optical element 110, a further optical element 114 is provided to enable an interference of the reference beam 107 and the object beam 108 in the region of the holographic medium 104. The optical element 110, in this case, is arranged at the bottom emission area 113 of the optoelectronic semiconductor chip 105. The further optical element 114 is arranged laterally next to the optoelectronic semiconductor chip 105 at the bottom side 103 of the earner 101.

[0092] The further optical element 114 is designed as a planar mirror, as an example. However, in all cases the optical element 110 and the further optical element 114 can be designed differently. E g., the optical element 110 can be designed as a planar mirror and the further optical element 114 can be designed as a hollow mirror. Apart from that, the optical element 110 and the further optical element 114 do not necessarily have to be designed as mirrors. Other optical elements such as diffractive gratings can also be used to deflect and adjust electromagnetic radiation according to a desired optical functionality of the hologram.

[0093] The reference beam is directed from top emission area 106 of the optoelectronic semiconductor chip 105 in the direction of the holographic medium 104 immediately (via the carrier 101), and the object beam 108 is directed from the bottom emission area 113 of the optoelectronic semiconductor chip 105 to the optical element 110, from the optical element 110 to the further optical element 114, and from the further optical element 114 to the holographic medium 104, such that the reference beam 107 and the object beam 108 interfere with each other in the region of the holographic medium 104. The optical element 110 and the further optical element 114 are removed after generating the hologram. During operation, which is shown on the right side of Fig. 2, it is sufficient to use electromagnetic radiation emitted at the top emission area 106 which forms the reconstruction beam 112 to read out the hologram. Again, the hologram acts as the optical component of the optoelectronic semiconductor chip 105. In Fig. 2, similarly to Fig. 1, the optical component, i.e. the hologram, comprises the functionality of collimation and deflection, exemplarily.

[0094] Of course, it would be possible to also have another further optical element on the light path of the object beam between the bottom emission area 113 and the optical element 110; or elsewhere further down the beam path towards the holographic medium 104 (not shown).

[0095] Fig. 8 schematically shows method of producing an optoelectronic component 20’ according to a variant of the second embodiment on the left side, and an optoelectronic component 20’ in according to said variant of the second embodiment in operation on the right side. In both cases, side views of the optoelectronic component 20’ are shown like in Fig. 2. But shadings of beams are omitted in Fig. 8.

[0096] We shall focus on the differences, because the methods and the optoelectronic components 20, 20’ of the second embodiment are rather similar. But in this variant of Fig. 8, the hologram is a reflective hologram and not a transmissive one like in Fig. 2. For this, the object beam 108 must be incident on the holographic medium 104 from the other side. This is accomplished by directing the object beam 108 firstly, too, at the optical element 110, but then not via a single further optical element 114 (and via the carrier 101) at the holographic medium 104 like in Fig. 2, but

[0097] - at a further optical element 114, such as a planar mirror, and

[0098] - from there to another further optical element 114’, such as another planar mirror, before it reaches the holographic medium 104 (without passing through the carrier 101).

[0099] Of course, it would be possible to also have yet another further optical element on the light path of the object beam between the bottom emission area 113 and the optical element 110; or elsewhere further down the beam path towards the holographic medium 104 (not shown). Fig. 3 schematically shows a method of producing an optoelectronic component 30 according to a third embodiment on the left side, and the optoelectronic component 30 according to the third embodiment in operation on the right side. In both cases, side views of the optoelectronic component 30 are shown. The method and the optoelectronic component 30 according to the third embodiment comprise similarities to the method and the optoelectronic component 10, 20 according to Fig. 1 and 2, respectively. In the following description, only differences of the method and the optoelectronic component 30 according to the third embodiment to the optoelectronic component 10, 20 according to the first and second embodiment will be explained, respectively. The reference numerals are maintained for similar or identical elements.

[0100] In this case, the optoelectronic semiconductor chip 105 is designed to emit electromagnetic radiation at the top emission area 106 and at a bottom emission area 113 opposite the top emission area 102 to produce the reference beam 107 and the object beam 108. Thus, the beam splitter 109 is not necessary in the embodiment of Fig. 3 and is omitted. The optical element 110 is arranged at the bottom emission area 113 of the optoelectronic semiconductor chip 105, similarly to the arrangement of the optical element 110 of Fig. 2. However, the further optical element 114 is not necessary and is omitted. The reference beam 107 is directed from the top emission area 106 of the optoelectronic semiconductor chip 105 in the direction of the holographic medium 104 immediately (via the carrier 101). The object beam 108 is directed from the bottom emission area 113 to the optical element 110 and from the optical element 110 to the holographic medium 104, such that the reference beam 107 and the object beam 108 interfere with each other in the region of the holographic medium 108.

[0101] In the embodiment of Fig. 3, the optoelectronic semiconductor chip 105 and the optical element 110 are arranged such that the optoelectronic semiconductor chip 105 is arranged in a path of the object beam 108 reflected at the optical element 110. Consequently, a shadowing of the object beam occurs, as shown on the left side of Fig. 3. For this reason, the optoelectronic semiconductor chip 105 comprises a smaller cross section parallel to the earner 101 compared to the optoelectronic semiconductor chips 105 shown in Fig. 1 and 2. For example, the optoelectronic semiconductor chips 105 according to the embodiments of Fig. 1 to 3 can comprise a cross section of 0,04 mm2to 0,1 mm2, which corresponds to an edge length of 200 pm to 300 pm. The optoelectronic semiconductor chip 105 of the embodiment of Fig. 3 can be connected to the earner 101 rigidly by means of the connection element 111 shown in Fig. 1, for example. As explained above, at least one further hologram can be generated in the holographic medium 104 by using at least one further optoelectronic semiconductor chip. As an example, the hologram can be generated according to Fig. 1, whereas the further hologram can be generated according to Fig. 2 afterwards, as an example. However, the hologram can be generated according to one of the Fig. 1 to 3. Also, the at least one further hologram can be generated according to one of the Fig. 1 to 3. The hologram and the at least one further hologram can be generated successively and / or simultaneously. Also, an additional reflective hologram which is designed as a reflection hologram to provide feedback in a laser cavity can be generated according to one of the Fig. 1 to 3.

[0102] Fig. 4 schematically shows optional method steps of producing an optoelectronic component 40 according to a fourth embodiment and the optoelectronic component 40 according to the fourth embodiment at the bottom of Fig. 4. In each case, side views of the optoelectronic component 40 are shown. The method and the optoelectronic component 40 according to the fourth embodiment comprise similarities to the method and the optoelectronic component 20 according to Fig. 2, respectively. In the following description, only differences of the method and the optoelectronic component 40 according to the fourth embodiment to the optoelectronic component 20 according to the second embodiment will be explained, respectively. The reference numerals are maintained for similar or identical elements.

[0103] In this embodiment, the optoelectronic semiconductor chip 105 is arranged at the bottom side 103 of the carrier 101 and connected to contact pads 115 which are arranged on the bottom side 103 of the earner 101 in order to electrically connect the optoelectronic semiconductor chip 105, which is shown on the top of Fig. 4. The optoelectronic semiconductor chip 105 can be attached to the contact pads 115 by a solder, for example. In this case the solder acts as an electrically conductive adhesive which rigidly connects the optoelectronic semiconductor chip 105 to the earner 101. Alternatively, a bonding method can be used to rigidly connect the optoelectronic semiconductor chip 105 to the contact pads 115 such as a eutectic bonding method. The optoelectronic semiconductor chip 105 is designed as a so-called flip-chip 105.

[0104] In the middle of Fig. 4, the recording is shown which - in the illustrated example - is performed according to Fig. 2, wherein the optical element 110 and parts of the object beam 108 are not drawn in the middle panel of Fig. 4. Alternatively, the hologram can be generated according to Fig. 1 or Fig. 3. At the bottom of Fig. 4, the optoelectronic component 40 is shown, as manufactured after additional optional method steps have been carried out. The optoelectronic semiconductor chip 105 has been arranged in a housing 116. The housing 116 is arranged at the bottom side 103 of the carrier 101 and connected to the carrier 101. The housing 116 encloses a hollow 117 which can also be referred to as cavity (not to be confused with a laser cavity). The optoelectronic semiconductor chip 105 is arranged in the hollow 117.

[0105] Also, an optoelectronic detector118 is arranged at the bottom emission area 113 of the optoelectronic semiconductor chip 105 after generating the hologram. The optoelectronic detector 118 is designed to detect electromagnetic radiation emitted by the optoelectronic semiconductor chip 105 at the bottom emission area 113. The optoelectronic detector 118 can also be called a photodiode 118. As an example, the photodiode 118 is arranged directly at the bottom emission area 113. The photodiode 118 is also arranged in the hollow 117 of the housing 116. Exemplarily, the photodiode 118 is flush with the housing 116 at a side of the housing 116 averted from the carrier 101. In another view, the photodiode 118 forms a part of the housing 116.

[0106] Fig. 5 schematically shows optional method steps of producing an optoelectronic component 50 according to a fifth embodiment and the optoelectronic component 50 according to the fifth embodiment at the bottom of Fig. 5. In each case, side views of the optoelectronic component 50 are shown. The method and the optoelectronic component 50 according to the fifth embodiment comprise similarities to the method and the optoelectronic component 40 according to Fig. 4, respectively. In the following description, only differences of the method and the optoelectronic component 50 according to the fifth embodiment to the optoelectronic component 40 according to the fourth embodiment will be explained, respectively. The reference numerals are maintained for similar or identical elements. Like in Fig. 4, also in the middle panel of Fig. 5, the optical element 110 and parts of the object beam 108 are not drawn.

[0107] In this case, the optoelectronic semiconductor chip 105 is not designed as a flip-chip which is arranged on the contact pads 115. Instead, the optoelectronic semiconductor chip 105 is arranged laterally next to the contact pads 115 at the bottom side 113 of the carrier 101 and connected to the contact pads 115 by means of a bonding wire 119. Here, the optoelectronic semiconductor chip 105 is rigidly connected to the earner 101 by fixing it onto the bottom side 103 of the carrier 101 with an adhesive which is transparent for electromagnetic radiation emitted by the optoelectronic semiconductor chips 105.

[0108] In both cases. Fig. 4 and 5, the carrier 101 and the holographic medium 104 are not arranged in the housing 116. Rather the housing 116 is attached to the bottom side 103 of the carrier 101. Fig. 6 schematically shows optional method steps of producing an optoelectronic component 60 according to a sixth embodiment and the optoelectronic component 60 according to the fifth embodiment at the bottom of Fig. 6. In each case, side views of the optoelectronic component 60 are shown. The method and the optoelectronic component 60 according to the sixth embodiment comprise similarities to the method and the optoelectronic component 40, 50 according to Fig. 4 and 5, respectively. In the following description, only differences of the method and the optoelectronic component 60 according to the sixth embodiment to the optoelectronic component 40, 50 according to the fourth and fifth embodiment will be explained, respectively. The reference numerals are maintained for similar or identical elements. Like in Figs. 4 and 5, also in the middle panel of Fig. 6, the optical element 110 and parts of the object beam 108 are not drawn.

[0109] In this embodiment, apart from the optoelectronic semiconductor chip 105 the carrier 101 and the holographic medium 104 are arranged in the housing 116, too. However, the photodiode 118 is not arranged in the housing 116 but rather outside the housing 116. The optoelectronic semiconductor chip 105 is connected to the carrier 101 by a transparent adhesive and also arranged on a PCB 120. The PCB 120 itself is not arranged in the hollow 117, in contrast to the optoelectronic semiconductor chip 105, i.e. it is not arranged in the housing 116. The PCB 120 is rather attached at the housing 116 at a side opposite carrier 101. In another view, the PCB 120 forms a part of the housing 116. The photodiode 118 is arranged at the PCB 120 on a side of the PCB 120 averted from the optoelectronic semiconductor chip 105. The PCB 120 comprises a through opening 122, also referred to as through hole. The through opening 122 is arranged in the region of the bottom emission area 113 of the optoelectronic semiconductor chip 105. Thus, the object beam 108 can pass through the through opening 122 during the generation of the hologram. The photodiode 118 is also arranged in the region of the through opening 122 to enable a detection of electromagnetic radiation emitted at the bottom emission area 113 of the optoelectronic semiconductor chip 105. The contact pads 115 and optional bonding wires 119 are not shown in Fig. 6 for the sake of simplicity. The contact pads 115 can be part of the PCB 120.

[0110] The earner 101 can be cut such that it fits into the housing 116 or manufactured directly in the housing. Exemplarily, the carrier 101 comprises an undercut such that the earner 101 is tapering towards the bottom side 103. Thus, the earner 101 comprises a slanted side 121 extending from the top side 102 to the bottom side 103 of the carrier 101, which is designed to direct the object beam 108 to the holographic medium 104 during the generation of the hologram since it can refract an object beam 108. A typical output power for the optoelectronic semiconductor chip 105 can be 1 mW. A divergence of electromagnetic radiation emitted by the optoelectronic semiconductor chip 105 can be 15° full angle. Assuming a distance between the optoelectronic semiconductor chip 105 and the hologram of 1 mm, a spot radius of a beam at a distance of 1 mm can be 0.013 cm. In this case, the power density at 1mm can be approx. 1836.5 mW / cm2.

[0111] Assuming a distance between the optoelectronic semiconductor chip 105 and the hologram of 5 mm, a spot radius of a beam at a distance of 5mm of 0.066 cm, the power density at 5 mm can be approx. 73.5 mW / cm2. The typical power density required for photopolymer, more particularly for producing the hologram therein, is in the range of 10 mW / cm2.

[0112] Consequently, the available power at the holographic medium 104 is sufficient.

[0113] The invention has been illustrated and described in detail with the aid of the preferred exemplary embodiments. Nevertheless, the invention is not restricted to the examples disclosed. Rather, other variants may be derived therefrom by a person skilled in the art without departing from the protective scope of the invention. REFERENCE SYMBOLS

[0114] optoelectronic component according to the first embodiment

[0115] ’ optoelectronic component according to a variant of the first embodiment optoelectronic component according to the second embodiment

[0116] ’ optoelectronic component according to a variant of the second embodiment optoelectronic component according to the third embodiment optoelectronic component according to the fourth embodiment optoelectronic component according to the fifth embodiment optoelectronic component according to the sixth embodiment

[0117] 1 earner

[0118] 2 top side of the carrier

[0119] 3 bottom side of the earner

[0120] 4 holographic medium

[0121] 5 optoelectronic semiconductor chip / VCSEL

[0122] 6 top emission area of the optoelectronic semiconductor chip

[0123] 7 reference beam

[0124] 8 object beam

[0125] 9 beam splitter

[0126] 0 optical element

[0127] 1 connection element

[0128] 2 reconstruction beam

[0129] 3 bottom emission area of the optoelectronic semiconductor chip

[0130] 4 further optical element

[0131] 4’ further optical element

[0132] 4” further optical element

[0133] 5 contact pads

[0134] 6 housing

[0135] 7 hollow

[0136] 8 optoelectronic detector / photodiode

[0137] 9 bonding wire

[0138] 0 PCB

[0139] 1 slanted side

[0140] 2 through opening

Claims

CLAIMS1. A method of producing an optoelectronic component (10, 20, 30, 40, 50, 60) comprising the following method steps:- providing a earner (101) comprising a bottom side (103) and top side (102) opposite the bottom side (103),wherein a holographic medium (104) is attached to the top side (102) of the earner (104), - arranging an optoelectronic semiconductor chip (105) at the bottom side (103) of the earner (101) and connecting the optoelectronic semiconductor chip (105) to the carrier (101) rigidly,wherein the optoelectronic semiconductor chip (105) is designed to emit electromagnetic radiation,wherein the carrier (101) is transparent for electromagnetic radiation emitted by the optoelectronic semiconductor chip (105),wherein the holographic medium (104) is photosensitive to electromagnetic radiation emitted by the optoelectronic semiconductor chip (105),- generating a hologram by illuminating the holographic medium (104),wherein the hologram is formed by recording an interference pattern of a reference beam (107) and an object beam (108) of electromagnetic radiation emitted by the optoelectronic semiconductor chip (105) and interfering with each other in the region of the photosensitive holographic medium (104),wherein the hologram is designed as an optical component for electromagnetic radiation emitted by the optoelectronic semiconductor chip (105).

2. The method according to claim 1,wherein the optoelectronic semiconductor chip (105) is designed to emit electromagnetic radiation at a top emission area (106) facing the bottom side (103) of the earner (101), wherein a beam splitter (109) is arranged between the top emission area (106) of the optoelectronic semiconductor chip (106) and the bottom side (103) of the earner (101) to produce the reference beam (107) and the object beam (108),wherein the reference beam (107) is directed from the beam splitter (109) in the direction of the holographic medium (104), in particular immediately, and the object beam (108) is directed from the beam splitter (109) to an optical element (110) arranged laterally next to the optoelectronic semiconductor chip (105) at the bottom side (103) of the carrier (101) and from the optical element (110) to the holographic medium (104) such that the reference beam (107) and the object beam (108) interfere with each other in the region of the holographic medium (104).

3. The method according to claim 1,wherein the optoelectronic semiconductor chip (105) is designed to emit electromagnetic radiation at a top emission area (106) facing the bottom side (103) of the earner (101) and at a bottom emission area (113) opposite the top emission area (106) and facing away from the bottom side (103) of the earner (101), to produce the reference beam (107) and the object beam (108),wherein the reference beam (107) is directed from the top emission area (106) of the optoelectronic semiconductor chip (105) in the direction of the holographic medium (104), in particular immediately, andthe object beam (108) is directedfrom the bottom emission area (113) of the optoelectronic semiconductor chip (105) to an optical element (110) arranged at the bottom emission area (113) of the optoelectronic semiconductor chip (105),from the optical element (110) to a further optical element (114), in particular wherein the further optical element (114) is arranged laterally next to the optoelectronic semiconductor chip (105) at the bottom side (103) of the earner (101), andfrom the further optical element (114) to the holographic medium (104), such that the reference beam (107) and the object beam (108) interfere with each other in the region of the holographic medium (104).

4. The method according to claim 1,wherein the optoelectronic semiconductor chip (105) is designed to emit electromagnetic radiation at a top emission area (106) facing the bottom side (103) of the earner (101) and at a bottom emission area (113) opposite the top emission area (106) and facing away from the bottom side (103) of the earner (101) to produce the reference beam (107) and the object beam (108),wherein the reference beam (107) is directed from the top emission area (106) of the optoelectronic semiconductor chip (105) in the direction of the holographic medium (104), in particular immediately, and the object beam (108) is directed from the bottom emission area (113) of optoelectronic semiconductor chip (105) to an optical element (110), in particular wherein the optical element (110) is arranged at the bottom emission area (113) of the optoelectronic semiconductor chip (105), and from the optical element (110) to the holographic medium (104) such that the reference beam (107) and the object beam (108) interfere with each other in the region of the holographic medium (104).

5. The method according to claim 3 or 4 comprising the following additional method step: - arranging an optoelectronic detector (118) at the bottom emission area (113) of the optoelectronic semiconductor chip (105),wherein the optoelectronic detector (118) is designed to detect electromagnetic radiation emitted by the optoelectronic semiconductor chip (105) at the bottom emission area (113).

6. The method according to one of the previous claims comprising the following additional method step,- arranging the optoelectronic semiconductor chip (105) in a housing (116).

7. The method according to one of the claims 2 to 4,wherein the optical element (110) and / or the further optical element (114) is designed to shape the object beam.

8. The method according to one of the previous claims,wherein the optoelectronic semiconductor chip (105) is rigidly connected to the carrier (101) by bonding or glueing the optoelectronic semiconductor chip (105) to the bottom side (103) of the earner (101) or by arranging the optoelectronic semiconductor chip (105) on a connection element (111) connected rigidly to the bottom side (103) of the earner (101) before generating the hologram.

9. The method according to one of the previous claims,wherein the holographic medium (104) remains attached to the top side (102) of the carrier (101) and optoelectronic semiconductor chip (105) remains rigidly connected to the bottom side (103) of the earner (101) after generating the hologram.

10. The method according to one of the preceding claims,wherein the optoelectronic semiconductor chip (105) is designed to read out the hologram by illuminating the hologram with a reconstruction beam (112) emitted at a top emission area (106) of the optoelectronic semiconductor chip (105) facing the bottom side (103) of the carrier (101).

11. The method according to one of the previous claims comprising the following additional method steps:- arranging a further optoelectronic semiconductor chip at the bottom side (103) of the earner (101) and connecting the further optoelectronic semiconductor chip to the earner (101) rigidly,wherein the further optoelectronic semiconductor chip is designed to emit electromagnetic radiation referred to as further electromagnetic radiation,wherein the carrier (101) is transparent for the further electromagnetic radiation emitted by the further optoelectronic semiconductor chip,wherein the holographic medium (104) is photosensitive to the further electromagnetic radiation emitted by the further optoelectronic semiconductor chip,- generating a further hologram by illuminating the holographic medium (104), wherein the further hologram is formed by recording a further interference pattern of a further reference beam and a further object beam of the further electromagnetic radiation emitted by the further optoelectronic semiconductor chip and interfering with each other in the region of the photosensitive holographic medium (104),wherein the further hologram is designed as a further optical component for the further electromagnetic radiation emitted by the further optoelectronic semiconductor chip or for the electromagnetic radiation emitted by the optoelectronic semiconductor chip (105).

12. The method of producing an optoelectronic component according to claim 11, wherein the hologram and the further hologram are generated successively or simultaneously.

13. The method according to one of the previous claims, comprising the following additional step:- generating an additional hologram by illuminating the holographic medium, wherein the additional hologram is formed by recording an additional interference pattern of an additional reference beam and an additional object beam of electromagnetic radiation emitted by the optoelectronic semiconductor chip (105) and interfering with each other in the region of the photosensitive holographic medium,wherein the additional hologram is designed to reflect electromagnetic radiation emitted by the optoelectronic semiconductor chip into a laser cavity of the optoelectronic semiconductor chip (105).

14. The method according to one of the previous claims, wherein the optoelectronic component (10, 20, 30, 40, 50, 60) is an optoelectronic component for emitting outgoing electromagnetic radiation, wherein the outgoing electromagnetic radiation originates from the electromagnetic radiation emitted by the optoelectronic semiconductor chip (105), in particular wherein the optoelectronic semiconductor chip (105) is configured and arranged to emit its electromagnetic radiation to pass through the carrier (101) to impinge on the hologram to be diffracted by the hologram to produce diffracted electromagnetic radiation, and wherein the outgoing electromagnetic radiation originates from the diffracted electromagnetic radiation.

15. Optoelectronic component (10, 20, 30, 40, 50, 60)comprising a earner (10) with a bottom side (103) and a top side (102) opposite the bottomside (103),wherein a holographic medium (104) is attached to the top side (102) of the carrier (101), wherein an optoelectronic semiconductor chip (105) is arranged at the bottom side (103) of the carrier (101) and connected to the earner (101) rigidly,wherein the optoelectronic semiconductor chip (105) is designed to emit electromagnetic radiation,wherein the carrier (101) is transparent for electromagnetic radiation emitted by the optoelectronic semiconductor chip (105),wherein the holographic medium (104) comprises a hologram,wherein the hologram is designed as an optical component for electromagnetic radiation emitted by the optoelectronic semiconductor chip (105);in particular wherein the optoelectronic component (10, 20, 30, 40, 50, 60) is an optoelectronic component for emitting outgoing electromagnetic radiation, wherein the outgoing electromagnetic radiation originates from the electromagnetic radiation emitted by the optoelectronic semiconductor chip (105),more particularly wherein the optoelectronic semiconductor chip (105) is configured and arranged to emit its electromagnetic radiation to pass through the carrier (101) to impinge on the hologram to be diffracted by the hologram to produce diffracted electromagnetic radiation, wherein the outgoing electromagnetic radiation originates from the diffracted electromagnetic radiation.

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