Display device, method for producing display device, and electronic device

Abstract

The present invention provides, for example, a display device in which the transmission distance of an input signal is shorter in comparison to conventional devices.　The display device comprises a light-emitting unit that includes a light-emitting element and a multilayered substrate that includes a multilayered wiring layer, wherein the light-emitting unit and the multilayered wiring layer are joined via a bump.

Description

Display device, method for manufacturing a display device, and electronic device

[0001] This disclosure relates to a display device, a method for manufacturing a display device, and an electronic device.

[0002] Display devices using light-emitting elements such as semiconductor light-emitting elements are expected to have applications in various fields such as AR (Augmented Reality), VR (Virtual Reality), and MR (Mixed Reality) as they become smaller and higher resolution. One example of a light-emitting element in such a display device is the organic light-emitting diode (OLED). Patent Document 1 below describes a display device using an organic light-emitting element. The display device described in Patent Document 1 has a structure in which FPCs (Flexible Printed Circuits) are connected with ACF (Anisotropic Conducting Film) as an external terminal extraction structure.

[0003] Japanese Patent Publication No. 2020-148847

[0004] In this field, it is desirable that the transmission distance of signals input to the display device be short.

[0005] One of the objectives of this disclosure is to provide a display device that shortens the transmission distance of signals input to the display device compared to conventional devices, a method for manufacturing the display device, and electronic equipment.

[0006] This disclosure relates to a display device having, for example, a light-emitting section including a light-emitting element and a multilayer substrate including a multilayer wiring layer, wherein the light-emitting section and the multilayer wiring layer are joined via bumps. This disclosure may also relate to an electronic device having the above-described display device.

[0007] Furthermore, this disclosure relates to a method for manufacturing a display device, in which, for example, a connector is soldered to a multilayer wiring layer on a multilayer substrate, and then bumps formed on a light-emitting section including an organic light-emitting element are bonded to the multilayer wiring layer.

[0008] A is a plan view showing a display unit according to an embodiment. B is a diagram for schematically illustrating the layout of subpixels in the region XS of A. This is a schematic cross-sectional diagram for illustrating an example of the cross-sectional configuration of a light-emitting unit according to the first embodiment, etc. A is a plan view of a display device according to the first embodiment, and B is a schematic cross-sectional diagram for illustrating an example of the cross-sectional configuration of a display device according to the first embodiment. A to C are diagrams for illustrating an example of a manufacturing method of a display device according to the first embodiment. A is a plan view of a display device according to a modified example of the first embodiment, and B is a schematic cross-sectional diagram for illustrating an example of the cross-sectional configuration of a display device according to a modified example of the first embodiment. A is a plan view of a display device according to another modified example of the first embodiment, and B is a schematic cross-sectional diagram for illustrating an example of the cross-sectional configuration of a display device according to another modified example of the first embodiment. A is a plan view of a display device according to another modified example of the first embodiment, and B is a schematic cross-sectional diagram for illustrating an example of the cross-sectional configuration of a display device according to another modified example of the first embodiment. A is a plan view of a display device according to a second embodiment, and B is a schematic cross-sectional diagram for illustrating an example of the cross-sectional configuration of a display device according to a second embodiment. Figures A to D are diagrams illustrating examples of manufacturing methods for the display device according to the second embodiment. A is a plan view of a display device according to a modified example of the second embodiment, and B is a schematic cross-sectional diagram illustrating an example of a cross-sectional configuration of the display device according to a modified example of the second embodiment. A is a plan view of a display device according to another modified example of the second embodiment, and B is a schematic cross-sectional diagram illustrating an example of a cross-sectional configuration of a display device according to another modified example of the second embodiment. A is a plan view of a display device according to another modified example of the second embodiment, and B is a schematic cross-sectional diagram illustrating an example of a cross-sectional configuration of a display device according to another modified example of the second embodiment. Figures A to C are diagrams illustrating examples of the configuration of the light-emitting part according to the third embodiment. A is a plan view of a display device according to the third embodiment, and B is a schematic cross-sectional diagram illustrating an example of a cross-sectional configuration of the display device according to the third embodiment.A is a plan view of a display device according to another modified example of the third embodiment, and B is a schematic cross-sectional view illustrating an example of a cross-sectional configuration of a display device according to another modified example of the third embodiment. A is a plan view of a display device according to another modified example of the third embodiment, and B is a schematic cross-sectional view illustrating an example of a cross-sectional configuration of a display device according to another modified example of the third embodiment. A is a schematic cross-sectional view illustrating a first example of a resonator structure. B is a schematic cross-sectional view illustrating a second example of a resonator structure. A is a schematic cross-sectional view illustrating a third example of a resonator structure. B is a schematic cross-sectional view illustrating a fourth example of a resonator structure. A is a schematic cross-sectional view illustrating a fifth example of a resonator structure. B is a schematic cross-sectional view illustrating a sixth example of a resonator structure. B is a schematic cross-sectional view illustrating a seventh example of a resonator structure. A, B, and C are conceptual diagrams illustrating the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN" passing through the center of the wavelength-selecting part, respectively. A is a front view showing an example of the appearance of a digital still camera. B is a rear view showing an example of the appearance of a digital still camera. A is a perspective view showing an example of the appearance of a head-mounted display. A is a perspective view showing an example of the appearance of a see-through head-mounted display.

[0009] The embodiments of this disclosure will be described below with reference to the drawings. The description will be in the following order: <Issues to be considered in this disclosure> <First embodiment> <Second embodiment> <Third embodiment> <Modification> <Application examples> The embodiments described below are preferred examples of this disclosure, and the content of this disclosure is not limited to these embodiments. In the following description, components having substantially the same functional configuration will be denoted by the same reference numerals, and redundant explanations will be omitted as appropriate. In addition, in order to prevent the illustration from becoming complicated, reference numerals may be denoted for only some components, or the illustration may be simplified or enlarged / reduced. Also, for the convenience of the explanation, directions such as left, right, up, and down will be defined, but the content of this disclosure is not limited to these directions. Furthermore, the X axis, Y axis, and Z axis in the following description are orthogonal to each other, the X axis and Y axis are axes in a predetermined plane, and the Z axis is an axis orthogonal to the predetermined plane.

[0010] <Issues to be considered in this disclosure> First, in order to facilitate understanding of this disclosure, we will explain the issues to be considered in this disclosure.

[0011] A known display device has a structure in which an FPC is connected via an ACF (Automatic Circuit Form Factor) to provide external terminals. When using an FPC, the transmission distance of signals input and output to the display device becomes long, making it difficult to speed up the various processes performed by the display device. In addition, the pad length required for connection via ACF becomes long (for example, about 1 mm), making it difficult to narrow the bezel of the display device.

[0012] On the other hand, in the semiconductor field, WL-CSP (Wafer Level-Chip Size Package) is known as a technology that enables narrow bezels and shorter signal transmission distances. However, since WL-CSP uses solder connections as its connection method, there is a problem that WL-CSP cannot be applied if the heat resistance of the self-emissive element used in the display device is low. Taking these problems into consideration, this disclosure will be described with reference to embodiments.

[0013] <First Embodiment> [Outline Configuration Example of Display Device] In the following description, a display device in which an OLED element is used as a self-luminous light-emitting element will be described as an example. However, this does not prohibit the use of light-emitting elements other than OLED elements in the display device according to this disclosure. Light-emitting elements such as LED (Light Emitting Diode) elements or quantum dots may be used as light-emitting elements. Furthermore, the size of the light-emitting element in plan view is not particularly limited, and for example, OLED elements and even smaller LED elements such as so-called micro-OLED elements and micro-LED elements may be used as light-emitting elements.

[0014] Furthermore, the cross-sections of the components of the display devices according to each embodiment and modification described below can be observed using a scanning electron microscope (SEM) or compositional analysis by EDX (Energy Dispersive X-ray).

[0015] An example of a display device according to this embodiment (hereinafter also appropriately referred to as display device 100A) will be described below. Display device 100A includes a light-emitting unit (light-emitting unit 1, described later) and a multilayer substrate (multilayer substrate 30, described later). Light-emitting unit 1 is a light-emitting device including a light-emitting element. Light-emitting unit 1 according to this embodiment is a glassless light-emitting device in which no sealing substrate such as a glass substrate is provided in the direction of light emission. The multilayer substrate 30 is arranged in the direction of light emission from light-emitting unit 1. The following describes each component.

[0016] [Example of Light-Emitting Unit Configuration] First, an example of a light-emitting unit 1 according to the embodiment will be described with reference to Figures 1A, 1B, and 2. Figure 1A is a plan view showing the light-emitting unit 1. Figure 1B is a diagram for schematicly explaining the layout of subpixels in the region XS in Figure 1A. Figure 2 is a schematic cross-sectional view showing the state of the longitudinal section along line A-A in Figure 1A.

[0017] (Display Area and Outer Area) In the light-emitting unit 1, a display area 1A and an outer area 1B are defined on the display surface D (see Figure 1A). The display area 1A is defined as the area from which light generated by multiple light-emitting elements is emitted. The outer area 1B is defined as the area outside the outer edge of the display area 1A. In the example in Figure 1A, the display area 1A is formed as a rectangular area. The outer area 1B is defined as the rectangular ring area outside the display area 1A. The position of the outer edge of the display area 1A is the position of the inner edge of the outer area 1B, and the display area 1A and the outer area 1B are adjacent at their boundary. Note that the display surface D shown in Figure 1A is the surface from which light generated by the light-emitting elements (hereinafter appropriately referred to as light-emitting elements 4) in the light-emitting unit 1 is extracted to the outside.

[0018] The following description will explain the case where the light-emitting unit 1 displays using a top emission method as an example. The top emission method refers to a method in which the light-emitting element 4 is positioned on the light-emitting surface side of the substrate (hereinafter appropriately referred to as substrate 11). Therefore, in the light-emitting unit 1, the substrate 11 is located on the back side of the light-emitting unit 1, and the direction from the substrate 11 toward the light-emitting element 4 (described later) (+Z direction) is the front side (top side) of the light-emitting unit 1. In the light-emitting unit 1, the light generated from the light-emitting element 4 is directed in the +Z direction and emitted to the outside. In the following description, in each layer constituting the light-emitting unit 1, the surface that is on the display surface D side of the display area (display area 1A) of the light-emitting unit 1 is referred to as the first surface (top surface), and the surface that is on the back side of the light-emitting unit 1 is referred to as the second surface (bottom surface). Other components will be described in the same manner. Note that this disclosure does not prohibit the light-emitting unit 1 from being a bottom emission method. The light-emitting unit 1 can also be applied to a bottom emission method. In the bottom emission method, the light generated from the light-emitting element 4 is directed in the -Z direction and emitted to the outside.

[0019] (Types of subpixels) In the examples shown in Figures 1A, 1B, and 2, three colors—red, green, and blue—are defined as multiple color types corresponding to the light-emitting color of the light-emitting unit 1, and three types of subpixels are provided: subpixel 2R, subpixel 2G, and subpixel 2B. Subpixels 2R, 2G, and 2B constitute one pixel. Subpixels 2R, 2G, and 2B are red, green, and blue subpixels, respectively, and display red, green, and blue. However, the examples shown in Figure 1A are just examples, and the light-emitting unit 1 is not limited to having multiple subpixels corresponding to three color types. Furthermore, the wavelengths of light corresponding to each of the red, green, and blue color types can be defined, for example, as wavelengths in the range of 610 nm to 650 nm (red wavelength band), 510 nm to 590 nm (green wavelength band), and 440 nm to 480 nm (blue wavelength band), respectively. Note that the number of sub-pixel colors is not limited to the three colors shown here; it may be two, four, or other colors. Also, the sub-pixel colors are not limited to red, green, and blue; they may be yellow, white, or other colors.

[0020] Furthermore, the layout of the sub-pixels 2R, 2G, and 2B in the light-emitting unit 1 is not particularly limited, but in the example shown in Figure 1B, the sub-pixels 2R, 2G, and 2B constituting one pixel are arranged in a stripe pattern in a predetermined area constituting the display surface D, and each pixel is provided in a two-dimensional layout. Therefore, in the light-emitting unit 1 shown in the example in Figure 1A, multiple sub-pixels 2R, 2G, and 2B corresponding to multiple color types are provided in a two-dimensional and stripe-like layout. Note that the pixel arrangement shown in Figure 1B is just one example, and the layout of the sub-pixels 2R, 2G, and 2B in this disclosure is not limited to the example shown in Figure 1B.

[0021] In this specification, unless otherwise specified, sub-pixels 2R, 2G, and 2B are referred to collectively as sub-pixel 2.

[0022] (Driving of sub-pixels) The light-emitting unit 1 generally includes a control circuit (not shown), an H driver and a V driver (not shown), and the control circuit controls the driving of the H driver and the V driver. The H driver and the V driver control the driving of each sub-pixel 2 on a column-by-column and row-by-row basis, respectively, when a two-dimensional matrix is ​​assigned to each sub-pixel 2.

[0023] (Light-emitting element substrate) In the example shown in Figure 2, the light-emitting unit 1 has a light-emitting element substrate 3. The light-emitting element substrate 3 includes a substrate 11, an inorganic insulating layer 12, and a light-emitting element 4. The inorganic insulating layer 12 and the light-emitting element 4 are formed in this order on the first surface of the substrate 11. The light-emitting element 4 has a structure in which a first electrode 13, an organic layer 14, and a second electrode 15 are stacked in order, as will be described later.

[0024] (Substrate) The substrate 11 may be made of, for example, glass or resin with low permeability to moisture and oxygen, or it may be made of a semiconductor that facilitates the formation of transistors and the like. Specifically, the substrate 11 may be a glass substrate, a semiconductor substrate, or a resin substrate.

[0025] As shown in Figure 2, an inorganic insulating layer 12 is provided on the substrate 11, and various circuits for driving multiple light-emitting elements 4 are provided within the inorganic insulating layer 12. Examples of these circuits include a drive circuit that controls the driving of the light-emitting elements 4 and a power supply circuit that supplies power to the multiple light-emitting elements 4 (neither of which are shown). As an example, the drive circuit section is composed of at least some of these circuits. The various circuits may be provided within the inorganic insulating layer 12 or on the first surface of the substrate 11. The various circuits are prevented from being exposed to the outside by the inorganic insulating layer 12. In addition, the substrate 11 is provided with wiring (not shown) for connecting the light-emitting elements 4 and circuits provided on the substrate 11 to the first electrode 13, etc. Examples of wiring include multiple contact plugs. For example, the substrate 11 and the inorganic insulating layer 12 constitute a support substrate for supporting the drive circuit section.

[0026] (Inorganic insulating layer) The inorganic insulating layer 12 is composed of, for example, an organic material or an inorganic material. The organic material includes, for example, at least one of polyimide and acrylic resin. The inorganic material includes, for example, at least one of silicon oxide, silicon nitride, silicon oxynitride and aluminum oxide.

[0027] (Light-emitting element) A plurality of light-emitting elements 4 are provided on the first surface of the inorganic insulating layer 12. The plurality of light-emitting elements 4 are provided, and each light-emitting element emits a color from its light-emitting surface that corresponds to the color type of the sub-pixel 2 (the color of the emitted light). For example, light-emitting elements 4R, 4G, and 4B are formed in sub-pixels 2R, 2G, and 2B, respectively. The plurality of light-emitting elements 4 are arranged in a layout that corresponds to the arrangement of sub-pixels 2 of each color type. In this specification, unless the types of light-emitting elements 4R, 4G, and 4B are specifically distinguished, they are collectively referred to as light-emitting elements 4.

[0028] The light-emitting element 4 has a laminated structure in which a first electrode 13, an organic layer 14, and a second electrode 15 are stacked in that order. The first electrode 13, the organic layer 14, and the second electrode 15 are stacked in this order from the substrate 11 side, in the direction from the second surface toward the first surface (+Z direction).

[0029] (First Electrode) Multiple first electrodes 13 are provided on the first surface side of the substrate 11. In the example in Figure 2, the first electrode 13 is the anode electrode.

[0030] The first electrode 13 is composed of at least one layer selected from a metal layer and a metal oxide layer. The first electrode 13 may be composed of a single layer of the metal layer or a metal oxide layer, or a laminated layer of the metal layer and the metal oxide layer.

[0031] The metal layer contains, for example, at least one metallic element selected from the group consisting of chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al), magnesium (Mg), iron (Fe), tungsten (W), and silver (Ag). The metal layer may also contain the above at least one metallic element as a constituent element of the alloy. Specific examples of the alloy include aluminum alloys and silver alloys. Specific examples of aluminum alloys include, for example, AlNd or AlCu.

[0032] The metal oxide layer includes, for example, at least one of a mixture of indium oxide and tin oxide (ITO), a mixture of indium oxide and zinc oxide (IZO), and titanium oxide (TiO).

[0033] In Figure 2, the first electrode 13 is electrically isolated for each sub-pixel 2. That is, multiple first electrodes 13 are provided on the first surface side of the substrate 11, and one is provided for each sub-pixel 2.

[0034] Furthermore, it is preferable that an insulating layer is formed between adjacent first electrodes 13. In the example shown in Figure 2, an inorganic insulating layer 12 is formed between adjacent first electrodes 13. In examples such as Figure 2, the inorganic insulating layer 12 electrically isolates each first electrode 13 for each light-emitting element 4 (i.e., each sub-pixel 2). Also, as shown in Figure 2, an opening 12A is formed in the inorganic insulating layer 12 on the first surface side, and the first surface of the first electrode 13 (the surface facing the second electrode 15) is exposed from the opening 12A of the inorganic insulating layer 12, so that the portion of the first electrode 13 exposed from the opening 12A faces the organic layer 14, which will be described later, while avoiding the interposition of the inorganic insulating layer 12. Note that the inorganic insulating layer 12 may be formed not only between adjacent first electrodes 13, but also so as to overlap the edges of the first electrodes 13. The edges of the first electrodes 13 are defined as the portion from the outer peripheral edge of the first electrode 13 to a predetermined position closer to the center of the first electrode 13. In this case as well, the inorganic insulating layer 12 has an opening 12A, and the first surface of the first electrode 13 is exposed through the opening 12A.

[0035] (Organic layer) The organic layer 14 is an organic light-emitting layer provided between the first electrode 13 and the second electrode 15. The organic layer 14 is provided as a layer common to the sub-pixels 2. In the example of Figure 2, the organic layer 14 is common to sub-pixels 2R, 2G, and 2B and is configured to emit white light. However, this does not prohibit the light-emitting color of the organic layer 14 from being other than white, and colors such as red, blue, and green may be used. That is, the light-emitting color of the organic layer 14 may be one of the following, for example, white, red, blue, and green.

[0036] The organic layer 14 has a configuration in which a hole injection layer, a hole transport layer, an emissive layer, and an electron transport layer are stacked in this order from the first electrode 13 to the second electrode 15. An electron injection layer may be provided between the electron transport layer and the second electrode 15. The electron injection layer is for increasing the electron injection efficiency. Note that the configuration of the organic layer 14 is not limited to this, and layers other than the emissive layer may be provided as needed.

[0037] The hole injection layer is designed to increase the efficiency of hole injection into the light-emitting layer and also acts as a buffer layer to suppress leakage. The hole transport layer is designed to increase the efficiency of hole transport to the light-emitting layer. The electron transport layer is designed to increase the efficiency of electron transport to the light-emitting layer.

[0038] The light-emitting layer generates light when an electric field is applied, causing recombination between electrons and holes. The light-emitting layer is an organic compound layer containing organic light-emitting material.

[0039] (Second Electrode) A second electrode 15 is provided on the upper side of the organic layer 14. Of the second electrode 15, the portion corresponding to the sub-pixel 2 (the portion corresponding to the light-emitting element 4) is provided so as to face the first electrode 13. The second electrode 15 is provided as an electrode common to multiple sub-pixels 2. The second electrode 15 is a cathode electrode. Preferably, the second electrode 15 is a transparent electrode that is transparent to light generated in the organic layer 14. The transparent electrode referred to here includes one formed of a transparent conductive layer and one formed of a laminated structure having a transparent conductive layer and a semi-transparent reflective layer.

[0040] The transparent conductive layer preferably uses a transparent conductive material with good light transmittance and a low work function. The transparent conductive layer can be formed from, for example, a metal oxide. Specifically, examples of materials for the transparent conductive layer include those containing at least one of the following: a mixture of indium oxide and tin oxide (ITO), a mixture of indium oxide and zinc oxide (IZO), and zinc oxide (ZnO).

[0041] The semi-transparent reflective layer can be formed, for example, from a metal layer. Specifically, examples of materials for the semi-transparent reflective layer include those containing at least one metallic element selected from the group consisting of magnesium (Mg), aluminum (Al), silver (Ag), gold (Au), and copper (Cu). The metal layer may also contain the above at least one metallic element as a constituent element of the alloy. Specific examples of alloys include MgAg alloys and AgPdCu alloys.

[0042] (Auxiliary electrode) The light-emitting section 1 is provided with an auxiliary electrode 26 in the outer area 1B. The auxiliary electrode 26 relays the electrical connection between the various circuits formed on the substrate 11 side and the second electrode 15.

[0043] The material of the auxiliary electrode 26 is not particularly limited as long as it is a conductive material; for example, metal can be used. As shown in Figure 2, the second electrode 15 is extended from the display area 1A to the outside (outer area 1B) and connected to the auxiliary electrode 26, thereby achieving an electrical connection between the second electrode 15 and the auxiliary electrode 26.

[0044] In the example shown in Figure 2, the auxiliary electrode 26 is formed in an annular shape, surrounding the display area 1A in a plan view of the display area 1A. However, Figure 2 is just one example, and the layout of the auxiliary electrode 26 is not limited to an annular shape.

[0045] (Protective layer) In the light-emitting section 1, a protective layer 16 is formed on the light-emitting substrate 3 so as to cover the surface (first surface) where the light-emitting element 4 is formed. The protective layer 16 makes it difficult for the first surface of the light-emitting element 4 to come into contact with the outside air and suppresses the intrusion of moisture into the light-emitting element 4 from the external environment.

[0046] The protective layer 16 is formed of an insulating material. For example, a thermosetting resin can be used as the insulating material. Other insulating materials may include SiO, SiON, AlO, TiO, etc. In this case, examples of protective layer 16 include a CVD film containing SiO, SiON, etc., and an ALD film containing AlO, TiO, SiO, etc. Note that a CVD film refers to a film formed using chemical vapor deposition. An ALD film refers to a film formed using atomic layer deposition. The protective layer 16 may be formed as a single layer, or it may have a structure in which multiple layers are stacked. The protective layer 16 may also have a structure in which multiple protective layers are stacked.

[0047] (Planing layer and functional layer) The planar layer 17 and the functional layer 5 are formed so as to cover the protective layer 16 (first surface).

[0048] (Planarization layer) The planarization layer 17 may be a layer made of an inorganic material or a layer made of an organic material. Examples of inorganic materials include materials similar to those used in the protective layer 16. Examples of organic materials include resin materials. The planarization layer 17 improves the flatness of the surface for forming the color filter 18, which will be described later. In addition, the planarization layer 17, together with the protective layer 16, makes it difficult for the first surface of the light-emitting element 4 to come into contact with the outside air, thereby suppressing the intrusion of moisture into the light-emitting element 4 from the external environment. The planarization layer 17 may also be included in the functional layer 5.

[0049] (Functional layer) A functional layer 5 is formed on top of the planarization layer 17. The functional layer 5 has a layer structure excluding the planarization layer 17 and is formed on the upper side of the protective layer 16. The functional layer 5 includes, for example, a color filter 18, a sealing layer 19, a filling layer 20, and a lens 21.

[0050] (Color Filter) In the light-emitting section 1, a color filter 18 is provided on the first surface side (upper side, +Z direction side) of the planarization layer 17. An example of the color filter 18 is an on-chip color filter (OCCF). In this embodiment, a first color filter 22 and a second color filter 23 are provided as the color filter 18. An example of the material of the color filter 18 is an organic material.

[0051] (First Color Filter) The first color filter 22 is formed approximately within the display area 1A. The first color filter 22 is provided according to the color type of the sub-pixel 2. For example, in the example shown in Figure 2, the first color filter 22 can be a red color filter (red filter 22R), a green color filter (green filter 22G), and a blue color filter (blue filter 22B). The red filter 22R, green filter 22G, and blue filter 22B are provided for sub-pixels 2R, 2G, and 2B, respectively. By providing the first color filter 22 in the light-emitting unit 1, light corresponding to the color type of sub-pixels 2R, 2G, and 2B can be effectively extracted to the outside.

[0052] (Second Color Filter) The second color filter 23 is formed outside the first color filter 22, which is the outermost layer. In Figure 2, the second color filter 23 is formed in the outermost area 1B. The second color filter 23 is formed to cover the upper side (+Z direction side) of the auxiliary electrode 26. The second color filter 23 functions as a light-shielding layer. The second color filter 23 has a structure in which a red color filter (red filter 23R) and a blue color filter (blue filter 23B) are laminated. The red filter 23R may be formed at the same time as the red filter 22R using the same material. The blue filter 23B may be formed integrally at the same time as the blue filter 22B using the same material.

[0053] The red filter 23R can be exemplified by a filter that readily transmits light in the red wavelength band of visible light and readily absorbs light in other wavelength bands. The blue filter 23B can be exemplified by a filter that readily transmits light in the blue wavelength band of visible light and readily absorbs light in other wavelength bands. With such a stacked structure of the red filter 23R and the blue filter 23B, light blocking can be achieved over a wide range of wavelengths. Therefore, the light generated by the light-emitting element 4 in the display area 1A that is directed diagonally from the outer area 1B to the outside is generally suppressed from being transmitted by the second color filter 23. In this way, the light leakage suppression effect of the second color filter 23 is achieved. Light directed from the outside of the light-emitting section 1 towards the substrate 11 is blocked by the second color filter 23, thereby suppressing the intrusion of external light.

[0054] Thus, the second color filter 23 has light-shielding properties when the red filter 23R and the blue filter 23B are stacked, and the stacked structure of the red filter 23R and the blue filter 23B functions as a light-shielding filter. In the example shown in Figure 2, the innermost end of the second color filter 23 is in contact with the outermost end of the first color filter 22.

[0055] (Sealing layer) A sealing layer 19 is formed on the color filter 18. The sealing layer 19 is formed in an area that covers at least a part of the second color filter 23, with the thickness direction of the light-emitting element substrate 3 as the line of sight (in a plan view of the light-emitting element substrate 3), and is formed to cover at least a part of the outer area 1B. A resin material or the like is used as the material of the sealing layer 19. The material of the sealing layer 19 is not particularly limited, but a material with higher moisture resistance than the color filter 18 is preferably used. A hygroscopic material may be added to the sealing layer 19.

[0056] (Lens) The functional layer 5 has a lens 21. Preferably, the lens 21 is formed on the first color filter 22 (on the first surface). In the example shown in Figure 2, the lens 21 is provided in a layout corresponding to each sub-pixel 2. Preferably, the lens 21 is an on-chip lens (OCL).

[0057] The shape of the lens 21 is not particularly limited. An example of the lens 21 is a lens formed in a convex shape having a curved surface that curves convexly on the first surface side (a so-called convex lens). By providing the lens 21, it becomes easier to adjust the light generated from the light-emitting element 4 to be emitted from the display area 1A, thereby improving the efficiency of light utilization.

[0058] (Filling layer) As shown in Figure 2, a filling layer 20 is provided in the display area 1A so as to cover the first surface side of the lens 21. The filling layer 20 smooths the first surface side of the display area 1A and protects the lens 21 and the light-emitting element 4 from outside air and moisture. The material of the filling layer 20 is, for example, a resin material, similar to the sealing layer 19.

[0059] As shown in Figure 2, the outer area 1B has an outer edge area 1C where only the substrate 11 and the inorganic insulating layer 12 exist. Although only the outer edge area 1C on the right side of the drawing is shown in Figure 2, an outer edge area 1C is similarly formed on the opposite left side. In other words, outer edge areas 1C are formed near the left and right ends of the light-emitting section 1. The outer edge area 1C is formed in a frame shape as a whole. As will be described in detail later, the outer edge area 1C is provided with multiple bumps.

[0060] [Detailed Configuration Example of Display Device] Next, a configuration example of the display device 100A according to the first embodiment will be described with reference to Figures 3A and 3B. Figure 3A is a plan view of the display device 100A (viewed from the +Z direction towards the -Z direction). Figure 3B is a schematic cross-sectional view showing the state of the longitudinal section along line A-A in Figure 3A. In Figure 3A, components that are not visible are shown with dotted lines. Figures 5A and others are illustrated in the same manner. In addition, in order to prevent the illustration from becoming complicated, the shape of the light-emitting part 1 is shown in a simplified manner as appropriate.

[0061] The display device 100A, for example, has a multilayer substrate 30 and a connector 50 in addition to the light-emitting unit 1 described above.

[0062] (Multilayer substrate) As shown in Figure 3B, the multilayer substrate 30 is positioned with respect to the direction of light emission (+Z direction) of the light-emitting unit 1 described above.

[0063] The multilayer substrate 30 includes a light-transmitting glass substrate 31 and a multilayer wiring layer 32 formed on the second surface of the glass substrate 31, and has a structure in which the glass substrate 31 and the multilayer wiring layer 32 are integrated. The portion of the glass substrate 31 facing the display area 1A must be light-transmitting, but the portion where the multilayer wiring layer 32 is formed may or may not be light-transmitting. As shown in Figure 3B, in this embodiment, the multilayer wiring layer 32 includes a first multilayer wiring layer 32A and a second multilayer wiring layer 32B separate from the first multilayer wiring layer 32A. When it is not necessary to distinguish between the first multilayer wiring layer 32A and the second multilayer wiring layer 32B, they are appropriately referred to collectively as the multilayer wiring layer 32.

[0064] The multilayer wiring layer 32 has a layer structure in which multiple (two or more) wiring layers made of wiring conductors are provided. The multiple wiring layers are stacked, for example, with an insulating layer in between, and the appropriate wiring layers are electrically connected via through conductors (vias). Note that in Figure 3B, the layer structure of the multilayer wiring layer 32 is shown in a simplified manner to prevent the illustration from becoming too complex.

[0065] (Bumps) The light-emitting section 1 described above further has bumps. The bumps are made of a material that can be bonded at or below the heat resistance temperature of the device (e.g., light-emitting element 4) (e.g., 100°C), more specifically Au (gold) bumps. The bumps are provided in the outer edge area 1C. For example, when the light-emitting section 1 is viewed in plan or in cross-section, a plurality of first bumps 41A are provided on the first surface of the inorganic insulating layer 12 in the right outer edge area 1C. Each first bump 41A is connected to various circuits within the inorganic insulating layer 12.

[0066] Multiple first bumps 41A are arranged, for example, along the vertical direction (Y direction, see Figure 3A). Each first bump 41A is bonded to the second surface of the first multilayer wiring layer 32A. Each first bump 41A is bonded to the second surface of the first multilayer wiring layer 32A by ultrasonic bonding, which is achieved by applying high-speed vibrations using ultrasonic waves. The bonding method is not limited to ultrasonic bonding, but by using ultrasonic bonding, it is possible to suppress thermal damage to the light-emitting element 4 of the light-emitting unit 1. A first underfill 42A is provided around the first bumps 41A for the purpose of filling gaps at the bonding site and suppressing stress concentration at the bonding site. Known materials can be used as the underfill material for the first underfill 42A. For example, epoxy resin can be used as the underfill material.

[0067] Furthermore, when the light-emitting section 1 is viewed in plan (see Figure 3A) or in cross-section, a plurality of second bumps 41B are provided on the first surface of the inorganic insulating layer 12 in the left outer edge area 1C. The plurality of second bumps 41B are arranged, for example, along the vertical direction (Y direction, see Figure 3A). This connects each second bump 41B to various circuits within the inorganic insulating layer 12.

[0068] Each second bump 41B is bonded to the second surface of the second multilayer wiring layer 32B. Each second bump 41B is bonded to the second surface of the second multilayer wiring layer 32B by ultrasonic bonding, which is achieved by applying high-speed vibrations using ultrasonic waves. The bonding method is not limited to ultrasonic bonding, but by using ultrasonic bonding, it is possible to suppress thermal damage to the light-emitting element 4 of the light-emitting unit 1. A second underfill 42B is provided around the second bump 41B for the purpose of filling gaps at the bonding site and suppressing stress concentration at the bonding site. A known underfill material can be used for the second underfill 42B. For example, epoxy resin can be used as the underfill material.

[0069] In the following description, the first bump 41A and the second bump 41B will be collectively referred to as "bump 41" unless there is a need to distinguish between them. Similarly, the first underfill 42A and the second underfill 42B will be collectively referred to as "underfill 42" unless there is a need to distinguish between them. In the display device 100A according to this embodiment, the light-emitting section 1 and the multilayer wiring layer 32 are joined via the bump 41. More specifically, the drive circuit section that drives the light-emitting element 4 (for example, various circuits in the inorganic insulating layer 12) and the multilayer wiring layer 32 are joined via the bump 41.

[0070] (Connector) A connector 50 is further joined to the multilayer wiring layer 32. Specifically, the connector 50 is joined to the first multilayer wiring layer 32A. The connector 50 is joined to the first multilayer wiring layer 32A by soldering, for example. The joining location of the connector 50 is not particularly limited, but it is joined to the vicinity of the edge of the multilayer substrate 30, for example. Although not shown in the illustration to avoid complexity, the second multilayer wiring layer 32B is routed on the second surface of the glass substrate 31 toward the joining location of the connector 50. The connector 50 is also soldered to this routed location. That is, one end of the connector 50 is soldered to the first multilayer wiring layer 32A and the second multilayer wiring layer 32B. The other end of the connector 50 is joined to the main board on which ICs (Integrated Circuits) and the like for performing various controls on the display device 100A are mounted.

[0071] With the configuration described above, the connector 50 is electrically connected to various circuits within the inorganic insulating layer 12 via the multilayer wiring layer 32 and the bumps 41. As a result, drive signals and the like for driving the display device 100A are supplied to the display device 100A via the connector 50. A predetermined signal may also be output from the display device 100A to the outside of the display device 100A via the connector 50.

[0072] [Example of a manufacturing method for a display device] Next, an example of a manufacturing method for the display device 100A will be described with reference to Figures 4A to 4C. As shown in Figure 4A, a multilayer substrate 30 with a multilayer wiring layer 32 is prepared, and a connector 50 is soldered to the multilayer wiring layer 32 of the multilayer substrate 30, for example by reflow soldering. Also, a bump 41 is formed in the outer edge area 1C of the light-emitting section 1 on which the light-emitting element 4 etc. is formed.

[0073] Next, the light-emitting unit 1 and the multilayer substrate 30 are flip-chip bonded. As shown in Figure 4B, the light-emitting unit 1 is inverted, and ultrasonic bonding is performed after bringing the bump 41 into close contact with a predetermined location on the multilayer wiring layer 32. Alternatively, the multilayer substrate 30 to which the connector 50 is bonded may be inverted, and ultrasonic bonding may be performed after bringing the bump 41 into close contact with a predetermined location on the multilayer wiring layer 32.

[0074] Next, as shown in Figure 4C, an underfill 42 is formed by applying and curing an underfill material. This completes the production of the display device 100A. The display device 100A is then incorporated into electronic devices such as AR glasses or VR glasses after its orientation (direction of light emission) has been adjusted as appropriate. Note that the above manufacturing method is just one example, and the order of each step may be changed, or new steps may be included.

[0075] [Effects obtained by this embodiment] According to this embodiment, for example, the following effects can be obtained. The display device described in the above-described embodiment has a flip-chip structure using a multilayer substrate and bumps (e.g., Au bumps). Since it is a direct bond using bumps, the resistance can be reduced and the signal transmission distance can be shortened, thus enabling faster processing. The PAD length required for connection by ACF can be shortened (for example, to about 1 / 10), so a narrow bezel can be achieved for the display device. By bonding the multilayer glass substrate and the connector before flip-chip bonding, it is possible to suppress thermal damage to the light-emitting element (e.g., micro-OLED) of the display device. In the display device according to the above-described embodiment, the glass substrate of the multilayer substrate can also serve as the cover glass for the light-emitting part. Since the light-emitting part 1 does not need to have a cover glass, the cost of the display device can be reduced.

[0076] [Modified Version of the First Embodiment] Next, modified versions of the first embodiment will be described. In this description of modified versions, the same or identical components as described above will be denoted by the same reference numerals, and redundant descriptions will be omitted as appropriate. Unless otherwise specified, the matters described in the first embodiment can be applied to these modified versions.

[0077] (First Modified Example) Figure 5A is a plan view (viewed from the +Z direction towards the -Z direction) of the display device according to the first modified example (hereinafter appropriately referred to as the display device 100B). Figure 5B is a schematic cross-sectional view showing the state of the longitudinal section along line A-A in Figure 5A.

[0078] Unlike the display device 100A, the display device 100B has a heat dissipation section 45. The heat dissipation section 45 is provided, for example, over at least a portion of the second surface of the light-emitting section 1 (specifically, the second surface of the substrate 11 that constitutes the support substrate). The area of ​​the heat dissipation section 45 is appropriately set to a size that ensures a certain level of heat dissipation.

[0079] The heat dissipation section 45 is made of, for example, a thermally conductive material (TIM (Thermal Interface Material)). Thermal conductive grease can be used as the thermally conductive material. Thermal conductive grease is a liquid with added thermally conductive particles. Thermal conductive grease has the advantages of low thermal resistance, being thin, and eliminating the need for heating or other treatments. Furthermore, a heat dissipation member made of a metal material with excellent heat dissipation properties may be provided on the second surface of the heat dissipation section 45 via the heat dissipation section 45. Examples of such metal materials include copper (Cu), aluminum (Al), gold (Au), and silver (Ag), or compounds thereof. The heat dissipation member may be made of a non-conductive material with high thermal conductivity. Aluminum nitride (AlN) can be an example of such a material.

[0080] By providing the heat dissipation section 45, the heat generated by the display device 100B can be effectively discharged.

[0081] The display device 100B is manufactured by flip-chip bonding the light-emitting unit 1 and the multilayer substrate 30, and then forming a heat dissipation section 45 on the second surface of the light-emitting unit 1. The heat dissipation section 45 may also be formed on the second surface of the light-emitting unit 1 before flip-chip bonding.

[0082] (Second Modification) Figure 6A is a plan view (viewed from the +Z direction towards the -Z direction) of the display device according to the second modification (hereinafter appropriately referred to as the display device 100C). Figure 6B is a schematic cross-sectional view showing the state of the longitudinal section along line A-A in Figure 6A.

[0083] The display device 100C may have multiple multilayer wiring layers, and connectors may be connected to each of these multilayer wiring layers. For example, as shown in Figures 6A and 6B, the display device 100C may have a first multilayer wiring layer 32A and a second multilayer wiring layer 32B. The first multilayer wiring layer 32A is provided on the right side of the second surface of the glass substrate 31, and the second multilayer wiring layer 32B is provided on the left side of the second surface of the glass substrate 31. The first connector 50A is soldered to the first multilayer wiring layer 32A, and the second connector 50B is soldered to the second multilayer wiring layer 32B, which is located on the opposite side from the first multilayer wiring layer 32A. In this way, the first connector 50A and the second connector 50B may be arranged on the left and right sides, respectively.

[0084] By providing multiple connectors, signals can be distributed to each connector, enabling faster processing. Furthermore, by providing multiple connectors, even if the number of signal types increases due to factors such as higher brightness of display devices, the signals can be distributed to each connector, thus suppressing processing delays.

[0085] The display device 100C is manufactured by soldering the first connector 50A to the first multilayer wiring layer 32A and the second connector 50B to the second multilayer wiring layer 32B, after which the light-emitting unit 1 and the multilayer substrate 30 are flip-chip bonded.

[0086] The display device 100C may have three or more multilayer wiring layers, with connectors connected to each of these layers.

[0087] (Third Modification) Figure 7A is a plan view (viewed from the +Z direction towards the -Z direction) of the display device according to the third modification (hereinafter appropriately referred to as the display device 100D). Figure 7B is a schematic cross-sectional view showing the state of the longitudinal section along line A-A in Figure 7A.

[0088] The display device 100D according to this example has the components described in the first modification and the components described in the second modification. That is, the display device 100D has a heat dissipation section 45, a first connector 50A joined to the first multilayer wiring layer 32A, and a second connector 50B joined to the second multilayer wiring layer 32B. With this configuration, the advantages described in the first and second modifications can be obtained.

[0089] <Second Embodiment> Next, a second embodiment will be described. In the description of the second embodiment, the same or identical components as described above will be denoted by the same reference numerals, and redundant descriptions will be omitted as appropriate. Unless otherwise specified, the matters described in the first embodiment can be applied to this embodiment.

[0090] [Example of the configuration of a display device according to the second embodiment] This embodiment is one in which the multilayer substrate and the sealing substrate such as a cover glass are separate components. Figure 8A is a plan view (viewed from the +Z direction to the -Z direction) of the display device according to the second embodiment (hereinafter appropriately referred to as the display device 100E). Figure 8B is a schematic cross-sectional view showing the state of the longitudinal section along line A-A in Figure 8A. The display device 100E generally has a configuration in which the light-emitting section 1, the multilayer substrate 30A, and the cover glass 55 are stacked in this order.

[0091] The display device 100E has a light-emitting unit 1 as described in the first embodiment. A first bump 41A is provided on the first surface of the inorganic insulating layer 12 in the right outer edge area 1C. A second bump 41B is provided on the first surface of the inorganic insulating layer 12 in the left outer edge area 1C of the light-emitting unit 1.

[0092] The display device 100E has a multilayer substrate 30A. The multilayer substrate 30A includes a multilayer organic substrate 31A and a multilayer wiring layer formed on the second surface of the multilayer organic substrate 31A, and has a structure in which the multilayer organic substrate 31A and the multilayer wiring layer are integrated.

[0093] The multilayer organic substrate 31A consists of at least two or more organic substrates, and each organic substrate is flexible, unlike glass substrates, ceramic substrates, etc. The multilayer organic substrate 31A has a rectangular shape in plan view (see Figure 8A). Furthermore, a rectangular opening 33 is formed near the center of the multilayer organic substrate 31A by hollowing out the central part (cavity structure).

[0094] A multilayer wiring layer is provided on the second surface of the multilayer organic substrate 31A located near the periphery of the opening 33. For example, a first multilayer wiring layer 32C is formed on the second surface of the multilayer organic substrate 31A located near the right periphery of the opening 33. A second multilayer wiring layer 32D is formed on the second surface of the multilayer organic substrate 31A located near the left periphery of the opening 33. The first multilayer wiring layer 32C and the second multilayer wiring layer 32D can be the same as the multilayer wiring layer 32 in the first embodiment described above. Note that in Figure 8B and other figures, the layer structure of the first multilayer wiring layer 32C and the second multilayer wiring layer 32D is simplified to prevent the illustration from becoming too complex.

[0095] The first bump 41A of the light-emitting section 1 is bonded to the first multilayer wiring layer 32C. Similar to the first embodiment, a first underfill 42A is provided at the bonded area. The first multilayer wiring layer 32C and the first bump 41A are bonded, for example, by ultrasonic bonding. The second bump 41B of the light-emitting section 1 is bonded to the second multilayer wiring layer 32D. Similar to the first embodiment, a second underfill 42B is provided at the bonded area. The second multilayer wiring layer 32D and the second bump 41B are bonded, for example, by ultrasonic bonding.

[0096] A connector 50 is bonded to the outside of the first multilayer wiring layer 32C (the right side in Figures 8A and 8B). The first multilayer wiring layer 32C and the connector 50 are joined, for example, by soldering. Although not shown in the illustration to avoid complexity, a second multilayer wiring layer 32D is routed on the second surface of the multilayer organic substrate 31A toward the connection point of the connector 50. The connector 50 is also soldered to this routed portion. That is, one end of the connector 50 is soldered to the first multilayer wiring layer 32C and the second multilayer wiring layer 32D. The other end of the connector 50 is bonded to the main board on which ICs and the like for performing various controls on the display device 100E are mounted.

[0097] The display device 100E has a cover glass 55, which is an example of a light-transmitting sealing substrate. The cover glass 55 is located on the first surface side of the multilayer organic substrate 31A. A glass substrate can be used as the cover glass 55. The material of the glass substrate is not particularly limited and should be made of a material that transmits light emitted from the light-emitting element 4. Examples of glass substrate materials include various glass substrates such as high-strain point glass, soda glass, borosilicate glass, and lead glass, as well as quartz substrates. The cover glass 55 may also be made of plastic or film.

[0098] As shown in Figure 8B, a sealing portion 56 is provided between the second surface of the cover glass 55 and the multilayer organic substrate 31A. As shown in Figure 8A, the sealing portion 56 has a rectangular frame shape in plan view. The sealing portion 56 bonds a part of the second surface of the cover glass 55 to a part of the first surface of the multilayer organic substrate 31A. For example, a thermosetting resin or an ultraviolet curing resin can be used as the sealing portion 56.

[0099] As shown in Figures 8A and 8B, in the display device 100E, the display area 1A, where at least the light-emitting element 4 is provided in the light-emitting unit 1, faces a part of the second surface of the cover glass 55 through an opening 33. The light emitted from the light-emitting element 4 of the light-emitting unit 1 is emitted to the outside of the display device 100E through the opening 33 and the cover glass 55.

[0100] [Example of manufacturing method of a display device according to the second embodiment] Next, an example of manufacturing method of the display device 100E will be described with reference to Figures 9A to 9D. As shown in Figure 9A, a multilayer organic substrate 31A is prepared on which a first multilayer wiring layer 32C and a second multilayer wiring layer 32D are provided. A connector 50 is soldered to the first multilayer wiring layer 32C and the second multilayer wiring layer 32D of the multilayer organic substrate 31A, for example by reflow soldering. In addition, a first bump 41A and a second bump 41B are formed on the outer edge area 1C of the light-emitting part 1 on which the light-emitting element 4 etc. are formed.

[0101] Next, the light-emitting unit 1 and the multilayer substrate 30A are flip-chip bonded. As shown in Figure 9B, the light-emitting unit 1 is inverted. Then, the first bump 41A and the first multilayer wiring layer 32C are brought into close contact, and the second bump 41B and the second multilayer wiring layer 32D are brought into close contact, and ultrasonic waves are applied to perform ultrasonic bonding. Alternatively, after inverting the multilayer substrate 30A to which the connector 50 is bonded, the first bump 41A and the first multilayer wiring layer 32C are brought into close contact, and the second bump 41B and the second multilayer wiring layer 32D are brought into close contact, and then ultrasonic bonding may be performed.

[0102] Next, as shown in Figure 9C, underfill material is applied and cured to form underfills 42A and 42B.

[0103] Next, as shown in Figure 9D, a sealing material constituting the sealing portion 56 is applied to a predetermined location on the first surface of the multilayer organic substrate 31A. Then, the sealing material is brought into contact with a predetermined location on the second surface of the cover glass 55, and the sealing material is hardened by applying heat or the like to form the sealing portion 56. This completes the installation of the cover glass 55.

[0104] The display device 100E is manufactured through the above process. The display device 100E is then incorporated into electronic devices such as AR glasses or VR glasses after its orientation (direction of light emission) has been adjusted as appropriate. Note that the above manufacturing method is just one example, and the order of each step may be changed, or new steps may be included.

[0105] [Modified Version of the Second Embodiment] Next, a modified version of the second embodiment will be described. In this description of the modified version, the same or identical components as described above will be denoted by the same reference numerals, and redundant descriptions will be omitted as appropriate. Unless otherwise specified, the matters described in the second embodiment can be applied to this modified version.

[0106] (First Modified Example) Figure 10A is a plan view (viewed from the +Z direction towards the -Z direction) of the display device according to the first modified example (hereinafter appropriately referred to as the display device 100F). Figure 10B is a schematic cross-sectional view showing the state of the longitudinal section along line A-A in Figure 10A.

[0107] Unlike the display device 100E, the display device 100F has a heat dissipation section 45A. The heat dissipation section 45A is provided, for example, over at least a portion of the second surface of the light-emitting section 1 (the second surface of the substrate 11). The area of ​​the heat dissipation section 45A is appropriately set to ensure a certain level of heat dissipation. The same type of heat dissipation section 45 described in the first embodiment can be used for the heat dissipation section 45A. By providing the heat dissipation section 45A, the heat generated by the display device 100F can be effectively discharged.

[0108] For example, the display device 100F is manufactured by flip-chip bonding the light-emitting unit 1 and the multilayer substrate 30A, installing the cover glass 55, and then forming a heat dissipation section 45A on the second surface of the light-emitting unit 1. The heat dissipation section 45A may be formed on the second surface of the light-emitting unit 1 before flip-chip bonding.

[0109] (Second Modification) Figure 11A is a plan view (viewed from the +Z direction towards the -Z direction) of a display device according to the second modification (hereinafter appropriately referred to as the display device 100G). Figure 11B is a schematic cross-sectional view showing the state of the longitudinal section along line A-A in Figure 11A.

[0110] The display device 100G may have multiple multilayer wiring layers, and connectors may be connected to each of these multilayer wiring layers. For example, as shown in Figures 11A and 11B, the display device 100G may have a first multilayer wiring layer 32C and a second multilayer wiring layer 32D. The first multilayer wiring layer 32C is provided on the right side of the second surface of the multilayer organic substrate 31A, and the second multilayer wiring layer 32D is provided on the left side of the second surface of the multilayer organic substrate 31A. The first connector 50A is soldered to the first multilayer wiring layer 32C, and the second connector 50B is soldered to the second multilayer wiring layer 32D, which is located on the opposite side from the first multilayer wiring layer 32C. In this way, the first connector 50A and the second connector 50B may be arranged on the left and right sides, respectively.

[0111] By providing multiple connectors, signals can be distributed to each connector, enabling faster processing. Furthermore, by providing multiple connectors, even if the number of signal types increases due to factors such as higher brightness of display devices, the signals can be distributed to each connector, thus suppressing processing delays.

[0112] For example, the display device 100G is manufactured by soldering a first connector 50A to a first multilayer wiring layer 32C, soldering a second connector 50B to a second multilayer wiring layer 32D, then flip-chip bonding the light-emitting unit 1 and the multilayer substrate 30A, and finally providing a cover glass 55.

[0113] The display device 100G may have three or more multilayer wiring layers, with connectors connected to each of these layers.

[0114] (Third Modification) Figure 12A is a plan view (viewed from the +Z direction towards the -Z direction) of a display device according to the third modification (hereinafter appropriately referred to as the display device 100H). Figure 12B is a schematic cross-sectional view showing the state of the longitudinal section along line A-A in Figure 12A.

[0115] The display device 100H according to this example has the components described in the first modification and the components described in the second modification. That is, the display device 100H has a heat dissipation section 45A and a first connector 50A and a second connector 50B. With this configuration, the advantages described in the first and second modifications can be obtained.

[0116] (Fourth Modification) The multilayer organic substrate 31A in the second embodiment and the above modification may be a multilayer ceramic substrate. That is, the multilayer substrate 30A may have a structure in which a multilayer ceramic substrate and a multilayer wiring layer are integrated.

[0117] <Third Embodiment> Next, a third embodiment will be described. In the description of the third embodiment, the same or identical components as described above will be denoted by the same reference numerals, and redundant descriptions will be omitted as appropriate. Unless otherwise specified, the matters described in the first and second embodiments can be applied to this embodiment.

[0118] [Example of Light-Emitting Section Configuration] Figure 13 is a schematic cross-sectional view showing an example of the cross-sectional configuration of a light-emitting section (hereinafter appropriately referred to as light-emitting section 10) according to the third embodiment. In addition to the components of the light-emitting section 1, the light-emitting section 10 has a cover glass 61, which is an example of a light-transmitting sealing substrate.

[0119] As shown in Figure 13, the cover glass 61 is provided on the first surface of the functional layer 5. More specifically, the cover glass 61 is provided across the first surface of the sealing layer 19 and the first surface of the filling layer 20. A glass substrate can be used as the cover glass 61. The material of the glass substrate is not particularly limited and should be made of a material that transmits light emitted from the light-emitting element 4. Examples of glass substrate materials include various glass substrates such as high-strain point glass, soda glass, borosilicate glass, and lead glass, as well as quartz substrates. The cover glass 61 may also be made of plastic or film.

[0120] Furthermore, among the components of the light-emitting unit 10, the components excluding the cover glass 61 (components including the light-emitting element substrate 3 and the functional layer 5) are appropriately referred to as the laminated structure 60.

[0121] [Example of the configuration of the display device according to the third embodiment] Figure 14A is a plan view (viewed from the +Z direction toward the -Z direction) of the display device according to the third embodiment (hereinafter appropriately referred to as the display device 100J). Figure 14B is a schematic cross-sectional view showing the state of the longitudinal section along line A-A in Figure 14A.

[0122] The display device 100J has the light-emitting section 10 described above. Bumps 41E are provided on the first surface of the inorganic insulating layer 12 in the right outer edge area 1C. The bumps 41E are made of, for example, Au (gold) bumps. For example, when the light-emitting section 1 is viewed from above (see Figure 14A), a plurality of bumps 41E are provided in the right outer edge area 1C. Each bump 41E is connected to various circuits within the inorganic insulating layer 12. The plurality of bumps 41E are arranged, for example, along the vertical direction (Y direction, see Figure 14A).

[0123] The display device 100J has a multilayer substrate 30B. The multilayer substrate 30B includes a multilayer organic substrate 31B and a multilayer wiring layer 32E formed on the second surface of the multilayer organic substrate 31B.

[0124] The multilayer organic substrate 31B consists of at least two or more organic substrates, and each organic substrate is flexible, unlike glass substrates, ceramic substrates, etc. The multilayer organic substrate 31B has a rectangular shape in plan view (see Figure 14A). The multilayer substrate 30B, which includes the multilayer organic substrate 31B, is arranged, for example, adjacent to the right side of the cover glass 61. However, the arrangement of the multilayer substrate 30B, which includes the multilayer organic substrate 31B, can be changed as appropriate.

[0125] A multilayer wiring layer 32E is formed on at least a portion of the second surface of the multilayer organic substrate 31B. The same multilayer wiring layer 32E as the multilayer wiring layer 32 in the first embodiment described above can be used. Note that in Figure 14B, the layer structure of the multilayer wiring layer 32E is shown in a simplified manner to avoid complexity in the illustration.

[0126] The bumps 41E of the light-emitting section 10 are bonded to the multilayer wiring layer 32E. Similar to the first embodiment, underfill 42E is provided at the bonding location. The multilayer wiring layer 32E and the bumps 41E are bonded, for example, by ultrasonic bonding.

[0127] A connector 50E is bonded to the outside of the multilayer wiring layer 32E (the right side in Figures 14A and 14B). The multilayer wiring layer 32E and the connector 50E are joined, for example, by soldering. The other end of the connector 50E is bonded to the main board on which ICs and other components for various control functions of the display device 100J are mounted.

[0128] The light emitted from the light-emitting element 4 of the light-emitting unit 1 is emitted to the outside of the display device 100J via the cover glass 61.

[0129] [Example of manufacturing method of a display device according to the third embodiment] Next, an example of manufacturing method of the display device 100J will be described with reference to Figures 15A to 15C. As shown in Figure 15A, a multilayer organic substrate 31B on which a multilayer wiring layer 32E is provided is prepared. A connector 50E is soldered to the multilayer wiring layer 32E of the multilayer organic substrate 31B, for example by reflow soldering. In addition, bumps 41E are formed on the outer edge area 1C of the light-emitting section 10 on which the laminated structure 60 and cover glass 61 are formed.

[0130] Next, the light-emitting unit 10 and the multilayer substrate 30B are flip-chip bonded. As shown in Figure 15B, the light-emitting unit 10 is inverted, and the bump 41E is brought into close contact with the multilayer wiring layer 32E for ultrasonic bonding. Alternatively, the multilayer substrate 30B to which the connector 50E is bonded may be inverted, and then the bump 41E and the multilayer wiring layer 32E may be brought into close contact for ultrasonic bonding.

[0131] Next, as shown in Figure 15C, the underfill 42E is formed by applying and curing the underfill material.

[0132] The display device 100J is manufactured through the above process. The display device 100J is then incorporated into electronic devices such as AR glasses or VR glasses after its orientation (direction of light emission) has been adjusted as appropriate. Note that the above manufacturing method is just one example, and the order of each step may be changed, or new steps may be included.

[0133] [Modification of the Third Embodiment] Next, a modification of the third embodiment will be described. In this description of the modification, the same or identical components as described above will be denoted by the same reference numerals, and redundant descriptions will be omitted as appropriate. Unless otherwise specified, the matters described in the first to third embodiments can be applied to this modification.

[0134] (First Modified Example) Figure 16A is a plan view (viewed from the +Z direction towards the -Z direction) of a display device according to the first modified example (hereinafter appropriately referred to as the display device 100K). Figure 16B is a schematic cross-sectional view showing the state of the longitudinal section along line A-A in Figure 16A.

[0135] Unlike the display device 100J, the display device 100K has a heat dissipation section 45B. The heat dissipation section 45B is provided, for example, over at least a portion of the second surface of the light-emitting section 10 (the second surface of the substrate 11). The area of ​​the heat dissipation section 45B is appropriately set to ensure a certain level of heat dissipation. The same type of heat dissipation section 45 described in the first embodiment can be used as the heat dissipation section 45B. By providing the heat dissipation section 45B, the heat generated by the display device 100K can be effectively discharged.

[0136] For example, the display device 100K is manufactured by flip-chip bonding a light-emitting unit 10 and a multilayer substrate 30B to which a connector 50E is bonded, and then forming a heat dissipation unit 45B on the second surface of the light-emitting unit 10. The heat dissipation unit 45B may be formed on the second surface of the light-emitting unit 10 before flip-chip bonding.

[0137] (Second Modification) Figure 17A is a plan view (viewed from the +Z direction towards the -Z direction) of the display device according to the second modification (hereinafter appropriately referred to as the display device 100L). Figure 17B is a schematic cross-sectional view showing the state of the longitudinal section along line A-A in Figure 17A.

[0138] A multilayer substrate 30C may be bonded to the side opposite to the outer edge area 1C described in the third embodiment (the left outer edge area 1C). The multilayer substrate 30C includes a multilayer organic substrate 31C and a multilayer wiring layer 32F formed on the second surface of the multilayer organic substrate 31C.

[0139] In the display device 100L, as shown in Figures 17A and 17B, a plurality of bumps 41F are formed on the first surface of the inorganic insulating layer 12 in the left outer edge area 1C. The plurality of bumps 41F are arranged along the vertical direction (Y direction). The bumps 41F are bonded to the multilayer wiring layer 32F, for example, by ultrasonic bonding.

[0140] A connector 50F, different from connector 50E, is joined to the multilayer wiring layer 32F. Connector 50F is joined to the multilayer wiring layer 32F, for example, by soldering. In this way, connectors 50E and 50F are arranged on the left and right sides, respectively. The display device 100L may have three or more multilayer substrates, and connectors may be joined to the multilayer wiring layers of each multilayer substrate.

[0141] By providing multiple connectors, signals can be distributed to each connector, enabling faster processing. Furthermore, by providing multiple connectors, even if the number of signal types increases due to factors such as higher brightness of display devices, the signals can be distributed to each connector, thus suppressing processing delays.

[0142] The display device 100L is manufactured, for example, as follows: A connector 50E is soldered to the multilayer wiring layer 32E of the multilayer substrate 30B, and a connector 50F is soldered to the multilayer wiring layer 32F of the multilayer substrate 30C. A light-emitting section 10 with bumps 41E and 41F formed on it is also prepared. The display device 100L is manufactured by joining the light-emitting section 10 to the multilayer substrate 30B and the multilayer substrate 30C by flip-chip bonding.

[0143] (Third Modification) Figure 18A is a plan view (viewed from the +Z direction towards the -Z direction) of a display device according to the third modification (hereinafter appropriately referred to as the display device 100M). Figure 18B is a schematic cross-sectional view showing the state of the longitudinal section along line A-A in Figure 18A.

[0144] The display device 100M according to this example has the components described in the first modification and the components described in the second modification. That is, the display device 100M has a heat dissipation section 45B and a multilayer substrate 30B and a multilayer substrate 30C. Furthermore, the display device 100M has a connector 50E bonded to the multilayer organic substrate 31B of the multilayer substrate 30B and a connector 50F bonded to the multilayer organic substrate 31C of the multilayer substrate 30C. With this configuration, the advantages described in the first modification and the second modification can be obtained.

[0145] (Fourth Modification) The multilayer organic substrate 31B in the third embodiment and the above modification may be a multilayer ceramic substrate. That is, the multilayer substrate 30B and the multilayer substrate 30C may have a structure in which the multilayer ceramic substrate and the multilayer wiring layer are integrated.

[0146] <Example of a resonator structure applied to the embodiment> The pixels used in the display device according to the present disclosure described above may be configured to include a resonator structure that resonates the light generated by the light-emitting element. The resonator structure will be described below with reference to the figures.

[0147] (Resonator Structure: First Example) Figure 19A is a schematic cross-sectional view illustrating the first example of a resonator structure. In the following description, the light-emitting elements 4 provided in correspondence with the sub-pixels 2R, 2G, and 2B are referred to as the light-emitting elements 4 Ｒ , 4 Ｇ , 4 Ｂ This is one such case. Also, the parts of the organic layer 14 that correspond to the sub-pixels 2R, 2G, and 2B are defined as the organic layer 14 Ｒ , 14A Ｇ , 14A Ｂ That happens.

[0148] In the first example, the first electrode 13 is formed with a common film thickness in each light-emitting element 4. The same applies to the second electrode 15.

[0149] A reflector 70 is disposed under the first electrode 13 of the light-emitting element 4 with an optical adjustment layer 71 interposed therebetween. A resonator structure is formed between the reflector 70 and the second electrode 15 to resonate the light generated in the organic layer 14. In the following description, the optical adjustment layers 71 provided corresponding to the sub-pixels 2R, 2G, and 2B are referred to as the optical adjustment layer 71 Ｒ , 71 Ｇ , 71 Ｂ and so on.

[0150] The reflector 70 is formed with a common film thickness for each light-emitting element 4. The film thickness of the optical adjustment layer 71 varies according to the color to be displayed by the pixel. By having different film thicknesses for the optical adjustment layers 71 Ｒ , 71 Ｇ , 71 Ｂ , an optical distance that optimally resonates with the wavelength of light corresponding to the color to be displayed can be set.

[0151] In the example shown in the figure, the upper surfaces of the reflectors 70 in the light-emitting elements 4 Ｒ , 4 Ｇ , 4 Ｂ are arranged to be aligned. As described above, since the film thickness of the optical adjustment layer 71 varies according to the color to be displayed by the pixel, the position of the upper surface of the second electrode 15 differs according to the types of the light-emitting elements 4 Ｒ , 4 Ｇ , 4 Ｂ .

[0152] The reflector 70 can be formed using, for example, a metal such as aluminum (Al), silver (Ag), copper (Cu), or an alloy having these as a main component.

[0153] The optical adjustment layer 71 can be composed using an inorganic insulating material such as silicon nitride (SiN ｘ ), silicon oxide (SiO ｘ ), silicon oxynitride (SiO ｘ N ｙ ), or an organic resin material such as an acrylic resin or a polyimide resin. The optical adjustment layer 71 may be a single layer or a laminated film of these plurality of materials. Also, the number of laminations may vary according to the type of the light-emitting element 4.

[0154] The first electrode 13 can be formed using a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO).

[0155] The second electrode 15 needs to function as a semi-transparent reflective film. The second electrode 15 can be formed using magnesium (Mg), silver (Ag), or a magnesium-silver alloy (MgAg) mainly composed of these, or an alloy containing alkali metals or alkaline earth metals.

[0156] (Resonator structure: Second example) Figure 19B is a schematic cross-sectional view illustrating a second example of a resonator structure.

[0157] In the second example as well, the first electrode 13 and the second electrode 15 are formed with a common film thickness in each light-emitting element 4.

[0158] In the second example as well, a reflector 70 is placed below the first electrode 13 of the light-emitting element 4, with an optical adjustment layer 71 in between. A resonator structure is formed between the reflector 70 and the second electrode 15 to resonate the light generated by the organic layer 14. Similar to the first example, the reflector 70 is formed with a common film thickness in each light-emitting element 4, while the film thickness of the optical adjustment layer 71 differs according to the color that the pixel should display.

[0159] In the first example shown in Figure 19A, the light-emitting element 4 Ｒ , 4 Ｇ , 4 Ｂ The upper surfaces of the reflectors 70 are arranged to be aligned, and the position of the upper surface of the second electrode 15 is such that the light-emitting element 4 Ｒ , 4 Ｇ , 4 Ｂ It varied depending on the type.

[0160] In contrast, in the second example shown in Figure 19B, the upper surface of the second electrode 15 is the light-emitting element 4 Ｒ , 4 Ｇ , 4 Ｂ They are arranged so that they are aligned. In order to align the upper surface of the second electrode 15, the light-emitting element 4 Ｒ , 4 Ｇ , 4 Ｂ In this case, the upper surface of the reflector 70 is the light-emitting element 4 Ｒ , 4 Ｇ, 4 Ｂ They are arranged differently depending on the type. For this reason, the lower surface of the reflector 70 (in other words, the surface of the base 73 shown as reference numeral 73 in the figure) has a stepped shape according to the type of light-emitting element 4.

[0161] The materials constituting the reflector 70, the optical adjustment layer 71, the first electrode 13, and the second electrode 15 are the same as those described in the first example, so their explanation will be omitted.

[0162] (Resonator Structure: Third Example) Figure 20A is a schematic cross-sectional view illustrating the third example of the resonator structure. In the following description, the reflectors 70 provided corresponding to the sub-pixels 2R, 2G, and 2B will be referred to as the reflectors 70 Ｒ , 70 Ｇ , 70 Ｂ That happens.

[0163] In the third example as well, the first electrode 13 and the second electrode 15 are formed with a common film thickness in each light-emitting element 4.

[0164] In the third example as well, a reflector 70 is placed below the first electrode 13 of the light-emitting element 4, with an optical adjustment layer 71 in between. A resonator structure is formed between the reflector 70 and the second electrode 15 to resonate the light generated by the organic layer 14. Similar to the first and second examples, the thickness of the optical adjustment layer 71 varies depending on the color that the pixel should display. And, similar to the second example, the position of the upper surface of the second electrode 15 is relative to the light-emitting element 4 Ｒ , 4 Ｇ , 4 Ｂ They are arranged so that they are aligned.

[0165] In the second example shown in Figure 19B, the lower surface of the reflector 70 was stepped in a shape corresponding to the type of light-emitting element 4, in order to align the upper surface of the second electrode 15.

[0166] In contrast, in the third example shown in Figure 20A, the film thickness of the reflector 70 is equal to the light-emitting element 4 Ｒ , 4 Ｇ , 4 Ｂ It is set differently depending on the type. More specifically, reflector 70 Ｒ , 70 Ｇ , 70 ＢThe film thickness is set so that the bottom surfaces are aligned.

[0167] The materials constituting the reflector 70, the optical adjustment layer 71, the first electrode 13, and the second electrode 15 are the same as those described in the first example, so their explanation will be omitted.

[0168] (Resonator structure: 4th example) Figure 20B is a schematic cross-sectional view illustrating the 4th example of a resonator structure. In the following description, the first electrode 13 provided corresponding to the sub-pixels 2R, 2G, and 2B will be referred to as the first electrode 13 Ｒ , 13 Ｇ , 13 Ｂ That happens.

[0169] In the first example shown in Figure 19A, the first electrode 13 and the second electrode 15 of each light-emitting element 4 are formed with a common film thickness. A reflector 70 is placed below the first electrode 13 of the light-emitting element 4, with an optical adjustment layer 71 in between.

[0170] In contrast, in the fourth example shown in Figure 20B, the optical adjustment layer 71 is omitted, and the film thickness of the first electrode 13 is reduced to the light-emitting element 4 Ｒ , 4 Ｇ , 4 Ｂ The settings varied depending on the type.

[0171] The reflector 70 is formed with a common film thickness for each light-emitting element 4. The film thickness of the first electrode 13 differs depending on the color that the pixel should display. Ｒ , 13 Ｇ , 13 Ｂ By having different film thicknesses, it is possible to set the optical distance that produces the optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0172] The materials constituting the reflector 70, the optical adjustment layer 71, the first electrode 13, and the second electrode 15 are the same as those described in the first example, so their explanation will be omitted.

[0173] (Resonator structure: Fifth example) Figure 21A is a schematic cross-sectional view illustrating the fifth example of a resonator structure.

[0174] In the first example shown in Figure 19A, the first electrode 13 and the second electrode 15 are formed with a common film thickness in each light-emitting element 4. A reflector 70 is placed below the first electrode 13 of the light-emitting element 4, with an optical adjustment layer 71 in between.

[0175] In contrast, in the fifth example shown in Figure 21A, the optical adjustment layer 71 is omitted, and instead, an oxide film 74 is formed on the surface of the reflector 70. The thickness of the oxide film 74 is Ｒ , 4 Ｇ , 4 Ｂ The settings were configured differently depending on the type. In the following description, the oxide film 74 provided in correspondence with sub-pixels 2R, 2G, and 2B is referred to as oxide film 74 Ｒ , 74 Ｇ , 74 Ｂ That happens.

[0176] The thickness of the oxide film 74 varies depending on the color that the pixel should display. Ｒ , 74 Ｇ , 74 Ｂ By having different film thicknesses, it is possible to set the optical distance that produces the optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0177] The oxide film 74 is a film formed by oxidizing the surface of the reflector 70, and is composed of, for example, aluminum oxide, tantalum oxide, titanium oxide, magnesium oxide, zirconium oxide, etc. The oxide film 74 functions as an insulating film for adjusting the optical path length (optical distance) between the reflector 70 and the second electrode 15.

[0178] Light-emitting element 4 Ｒ , 4 Ｇ , 4 Ｂ The oxide film 74, which has different thicknesses depending on the type, can be formed, for example, as follows.

[0179] First, the electrolyte is filled into the container, and the substrate on which the reflector 70 is formed is immersed in the electrolyte. Electrodes are then positioned opposite the reflector 70.

[0180] Then, a positive voltage is applied to the reflector 70 with the electrode as the reference, and the reflector 70 is anodized. The thickness of the oxide film due to anodizing is proportional to the voltage value relative to the electrode. Ｒ , 70 Ｇ , 70 Ｂ Anodizing is performed on each of the light-emitting elements 4 while applying a voltage corresponding to the type of light-emitting element 4. This makes it possible to form oxide films 74 of different thicknesses all at once.

[0181] The materials constituting the reflector 70, the first electrode 13, and the second electrode 15 are the same as those described in the first example, so their explanation will be omitted.

[0182] (Resonator structure: 6th example) Figure 21B is a schematic cross-sectional view illustrating the 6th example of a resonator structure.

[0183] In the sixth example, the light-emitting element 4 is constructed by stacking a first electrode 13, an organic layer 14, and a second electrode 15. However, in the sixth example, the first electrode 13 is formed to serve both as an electrode and a reflector. The first electrode 13 (which also functions as a reflector) is the light-emitting element 4 Ｒ , 4 Ｇ , 4 Ｂ It is formed from a material having optical constants selected according to the type. By having different phase shifts due to the first electrode 13 (which also serves as a reflector), it is possible to set the optical distance that produces the optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0184] The first electrode 13 (which also serves as a reflector) can be made from elemental metals such as aluminum (Al), silver (Ag), gold (Au), and copper (Cu), or alloys mainly composed of these metals. For example, the light-emitting element 4 Ｒ First electrode 13 Ｒ The (also serving as a reflector) is made of copper (Cu), and the light-emitting element 4 Ｇ First electrode 13 Ｇ (Also serves as a reflector) and light-emitting element 4 Ｂ First electrode 13 Ｂ The structure can be such that the (also serving as a reflector) is made of aluminum.

[0185] Since the materials constituting the second electrode 15 and the like are the same as those described in the first example, the description thereof will be omitted.

[0186] (Resonator structure: Seventh example) Fig. 22 is a schematic cross-sectional view for explaining the seventh example of the resonator structure.

[0187] The seventh example basically has a configuration in which the sixth example is applied to the light-emitting elements 4 Ｒ , 4 Ｇ and the first example is applied to the light-emitting elements 4 Ｂ . Also in this configuration, an optical distance that causes resonance optimal for the wavelength of light corresponding to the color to be displayed can be set.

[0188] The first electrodes 13 Ｒ , 13 Ｇ (also serving as a reflector) used for the light-emitting elements 4 Ｒ , 13 Ｇ can be composed of a single metal such as aluminum (Al), silver (Ag), gold (Au), copper (Cu), or an alloy having these as main components.

[0189] Regarding the materials constituting the reflector 70 Ｂ , the optical adjustment layer 71 Ｂ , and the first electrode 13 Ｂ used for the light-emitting element 4 Ｂ , since they are the same as those described in the first example, the description thereof will be omitted.

[0190] <Relationship between the normal lines passing through the centers of the light-emitting part, the lens member, and the wavelength selection part> The above-described display device may have a lens array (not shown). The display device may further include a flattening layer (not shown) between the first color filter 22 and the lens array. Examples of the lens array include the plurality of lenses 21 described above.

[0191] The lens array includes multiple lenses. The lenses may be on-chip microlenses. The multiple lenses are arranged two-dimensionally on the first surface of the first color filter 22 or the planarization layer in a predetermined arrangement pattern. Each subpixel includes one or two lenses. The lenses focus light emitted upward in the forward direction. The lenses have, for example, a convex curved surface that protrudes in the forward direction. The convex curved surface is, for example, dome-shaped. Here, the dome shape includes shapes such as a substantially parabolic, substantially hemispherical, and substantially semi-ellipsoidal.

[0192] The lens includes, for example, an inorganic material or polymer resin that is transparent to visible light. The inorganic material is, for example, silicon oxide (SiO₂). ｘ ) includes. Polymer resins include, for example, UV-curing resins.

[0193] The following describes the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN'' passing through the center of the wavelength selection part. Here, the light-emitting part 81 described below is, for example, the light-emitting element 4 described above. The lens member 83 described below is, for example, the lens 21 described above. The wavelength selection part 82 described below is, for example, the first color filter 22.

[0194] Furthermore, the size of the wavelength selector may be appropriately changed in accordance with the light emitted from the light-emitting unit, and if a light-absorbing unit (e.g., a black matrix unit) is provided between the wavelength selector units of adjacent light-emitting units, the size of the light-absorbing unit may be appropriately changed in accordance with the light emitted from the light-emitting unit. In addition, the size of the wavelength selector may be determined by the distance (offset amount) d between the normal vector passing through the center of the light-emitting unit and the normal vector passing through the center of the wavelength selector unit. ０ Depending on the circumstances, it may be changed as appropriate. The planar shape of the wavelength selection section may be the same as, similar to, or different from the planar shape of the lens element.

[0195] The following explanation will describe the relationship between the normals passing through the centers of the light-emitting unit 81, the wavelength-selecting unit 82, and the lens member 83 when they are arranged in this order, with reference to Figures 23A, 23B, 23C, and 24.

[0196] As shown in FIG. 23A, the normal line LN passing through the center of the light emitting part 81, the normal line LN” passing through the center of the wavelength selection part 82, and the normal line LN’ passing through the center of the lens member 83 may coincide. That is, D ０ =0, d ０ =0 may also be satisfied. However, D ０ represents the distance (offset amount) between the normal line LN passing through the center of the light emitting part 81 and the normal line LN’ passing through the center of the lens member 83, and d ０ represents the distance (offset amount) between the normal line LN passing through the center of the light emitting part 81 and the normal line LN” passing through the center of the wavelength selection part 82.

[0197] As shown in FIG. 23B, the normal line LN passing through the center of the light emitting part 81 and the normal line LN” passing through the center of the wavelength selection part 82 coincide, but the normal line LN passing through the center of the light emitting part 81 and the normal line LN” passing through the center of the wavelength selection part 82 and the normal line LN’ passing through the center of the lens member 83 may not coincide. That is, D ０ >0, d ０ =0 may also be satisfied.

[0198] As shown in FIG. 23C, the normal line LN passing through the center of the light emitting part 81, the normal line LN” passing through the center of the wavelength selection part 82 and the normal line LN’ passing through the center of the lens member 83 do not coincide, and the normal line LN” passing through the center of the wavelength selection part 82 and the normal line LN’ passing through the center of the lens member 83 may coincide. That is, D ０ >0, d ０ >0, D ０ =d ０ may also be satisfied.

[0199] As shown in FIG. 24, the normal line LN passing through the center of the light emitting part 81, the normal line LN” passing through the center of the wavelength selection part 82, and the normal line LN’ passing through the center of the lens member 83 may all not coincide. That is, D ０ >0, d ０ >0, D ０ ≠d ０This is also acceptable. Here, it is preferable that the center of the wavelength selection unit 82 (the position indicated by the black square in Figure 24) is located on the straight line LL connecting the center of the light-emitting unit 81 and the center of the lens member 83 (the position indicated by the black circle in Figure 24). Specifically, the distance between the center of the light-emitting unit 81 and the center of the wavelength selection unit 82 in the thickness direction (vertical direction in Figure 52) is LL. １ The distance in the thickness direction between the center of the wavelength selection section 82 and the center of the lens member 83 is LL ２ In that case, D ０ >d ０ > 0, and considering manufacturing variations, d ０ : D ０ =LL １ : (LL １ +LL ２ It is preferable that the following conditions are satisfied. Here, the thickness direction refers to the thickness direction of the light-emitting part 81, the wavelength-selecting part 82, and the lens member 83.

[0200] The following explanation will describe the relationship between the normals passing through the centers of the light-emitting unit 81, the lens member 83, and the wavelength selection unit 82 when they are arranged in this order, with reference to Figures 25A, 25B, and 26.

[0201] As shown in Figure 25A, the normal vector LN passing through the center of the light-emitting section 81, the normal vector LN'' passing through the center of the wavelength selection section 82, and the normal vector LN' passing through the center of the lens member 83 may be configured to coincide. That is, D ０ > 0, d ０ It may also be equal to 0.

[0202] As shown in Figure 25B, the normal vector LN passing through the center of the light-emitting section 81 does not coincide with the normal vector LN'' passing through the center of the wavelength-selecting section 82 and the normal vector LN' passing through the center of the lens member 83, but the normal vector LN'' passing through the center of the wavelength-selecting section 82 and the normal vector LN' passing through the center of the lens member 83 may coincide. That is, D ０ > 0, d ０ > 0, D ０ = d ０ That's fine.

[0203] As shown in Figure 26, the normal vector LN passing through the center of the light-emitting section 81, the normal vector LN'' passing through the center of the wavelength-selecting section 82, and the normal vector LN' passing through the center of the lens member 83 may not all coincide. Here, it is preferable that the center of the lens member 83 (the position shown by the black circle in Figure 26) is located on the straight line LL connecting the center of the light-emitting section 81 and the center of the wavelength-selecting section 82 (the position shown by the black square in Figure 26). Specifically, the distance between the center of the light-emitting section 81 and the center of the lens member 83 in the thickness direction (vertical direction in Figure 26) is LL. ２ The distance in the thickness direction between the center of the lens member 83 and the center of the wavelength selection portion 82 is LL １ When that happens, d ０ >D ０ > 0, and considering manufacturing variations, D ０ :d ０ =LL ２ : (LL １ +LL ２ It is preferable that the following conditions are satisfied. Here, the thickness direction refers to the thickness direction of the light-emitting part 81, the wavelength-selecting part 82, and the lens member 83.

[0204] <Modifications> Although embodiments of the present disclosure have been described in detail above, the content of this disclosure is not limited to the embodiments described above, and various modifications are possible based on the technical idea of ​​this disclosure. Modifications are described below.

[0205] In the above embodiment, an example was described in which the light-emitting element 4 is an OLED element. However, the light-emitting element 4 is not limited to this example, and may be, for example, an LED (Light Emitting Diode) element, an inorganic electroluminescence (IEL) element, a quantum dot light-emitting diode (QLED) element, or a self-emissive light-emitting element such as a semiconductor laser element. Two or more types of light-emitting elements may be provided in each of the above-described display devices.

[0206] The configurations, methods, processes, shapes, materials, and numerical values ​​given in the embodiments and modifications are merely examples, and different configurations, methods, processes, shapes, materials, and numerical values ​​may be used as needed. Furthermore, unless otherwise specified, the materials exemplified in the embodiments and modifications may be used individually or in combination of two or more.

[0207] Furthermore, the present disclosure may also adopt the following configurations: (1) A display device comprising a light-emitting section including a light-emitting element and a multilayer substrate including a multilayer wiring layer, wherein the light-emitting section and the multilayer wiring layer are joined via bumps. (2) The display device according to (1), wherein the light-emitting section includes a drive circuit section for driving the light-emitting element, and the drive circuit section and the multilayer wiring layer are joined via bumps. (3) The display device according to (2), wherein a connector is further connected to the multilayer wiring layer. (4) The display device according to (3), comprising a plurality of the multilayer wiring layers, with a connector connected to each of the multilayer wiring layers. (5) The display device according to (4), wherein, in a cross-sectional view, two of the multilayer wiring layers are arranged spaced apart to the left and right, and the connector is connected to each of the multilayer wiring layers. (6) The display device according to any one of (2) to (5), wherein the drive circuit section has a first surface and a second surface opposite to the first surface, the bumps are formed at predetermined locations on the first surface, and a heat dissipation section is provided on the second surface. (7) The display device according to any one of (3) to (5), wherein the multilayer substrate includes a substrate having an opening, a sealing substrate is provided on the first surface side of the substrate, and the multilayer wiring layer is formed at predetermined locations on the second surface opposite to the first surface of the substrate. (8) The display device according to (7), which has a light-transmitting sealing substrate, wherein the area on which the light-emitting element of the light-emitting section is provided and a part of the sealing substrate face each other through the opening. (9) The display device according to (7) or (8), wherein the drive circuit section has a first surface and a second surface opposite to the first surface, the bumps are formed at predetermined locations on the first surface, and a heat dissipation section is provided on the second surface. (10) The display device according to any one of (3) to (5), having a sealing substrate laminated on the light-emitting portion. (11) The display device according to (10), wherein the multilayer substrate is arranged adjacent to the sealing substrate.(12) The display device according to (11), wherein in a cross-sectional view, a first multilayer substrate and a second multilayer substrate are arranged on each side of the sealing substrate, a first connector is connected to the multilayer wiring layer of the first multilayer substrate, and a second connector is connected to the multilayer wiring layer of the second multilayer substrate. (13) The display device according to any one of (10) to (12), wherein the drive circuit section has a first surface and a second surface opposite to the first surface, the bump is formed at a predetermined location on the first surface, and a heat dissipation section is provided on the second surface. (14) The display device according to any one of (1) to (13), wherein the multilayer substrate has a structure in which a glass substrate and the multilayer wiring layer are integrated. (15) The display device according to any one of (1) to (13), wherein the multilayer substrate has a structure in which an organic substrate and the multilayer wiring layer are integrated. (16) The display device according to any one of (1) to (13), wherein the multilayer substrate has a structure in which a ceramic substrate and the multilayer wiring layer are integrated. (17) The display device according to any one of (1) to (16), wherein the bump is made of a material that can be bonded at or below the heat resistance temperature of the light-emitting element, and the light-emitting element is an organic light-emitting element. (18) A method for manufacturing a display device, comprising soldering a connector to the multilayer wiring layer of a multilayer substrate, and then bonding a bump formed on a light-emitting part including an organic light-emitting element to the multilayer wiring layer. (19) An electronic device having the display device according to any one of (1) to (18).

[0208] <Application Examples> (Electronic Devices) The display device according to the above embodiment may be provided in various electronic devices. The display device is particularly suitable for devices that require high resolution and are used close to the eyes with magnification, such as the electronic viewfinder of a video camera or SLR camera, or a head-mounted display.

[0209] (Specific Example 1) Figures 27A and 27B show an example of the external appearance of a digital still camera 310. This digital still camera 310 is a single-lens reflex type with interchangeable lenses, and has an interchangeable shooting lens unit (interchangeable lens) 312 located approximately in the center of the front of the camera body 311, and a grip portion 313 for the photographer to hold on the left side of the front.

[0210] A monitor 314 is provided on the back of the camera body 311, slightly to the left of the center. An electronic viewfinder (eyepiece) 315 is provided above the monitor 314. The photographer can determine the composition by looking through the electronic viewfinder 315 and visually confirming the light image of the subject guided by the shooting lens unit 312. The electronic viewfinder 315 is equipped with the display device according to the above embodiment.

[0211] (Specific Example 2) Figure 28 shows an example of the appearance of the head-mounted display 320. The head-mounted display 320 has, for example, a glasses-shaped light-emitting unit 321 and ear hooks 322 on both sides for being attached to the user's head. The light-emitting unit 321 is equipped with a display device according to the above embodiment.

[0212] (Specific Example 3) Figure 29 shows an example of the appearance of the see-through head-mounted display 340. The see-through head-mounted display 340 comprises a main body 341, an arm 342, and a lens barrel 343.

[0213] The main body 341 is connected to the arm 342 and the eyeglasses 350. Specifically, the long end of the main body 341 is connected to the arm 342, and one side of the main body 341 is connected to the eyeglasses 350 via a connecting member. The main body 341 may also be directly attached to the head of a person.

[0214] The main body 341 houses a control board for controlling the operation of the see-through head-mounted display 340, as well as a light-emitting unit. The arm 342 connects the main body 341 to the lens barrel 343 and supports the lens barrel 343. Specifically, the arm 342 is connected to the end of the main body 341 and the end of the lens barrel 343, respectively, to fix the lens barrel 343 in place. The arm 342 also houses signal lines for communicating image data provided from the main body 341 to the lens barrel 343.

[0215] The lens barrel 343 projects image light, provided from the main body 341 via the arm 342, through the eyepiece 351 towards the eyes of the user wearing the see-through head-mounted display 340. In this see-through head-mounted display 340, the light-emitting part of the main body 341 is equipped with the display device according to the above embodiment.

[0216] 1, 10...Light-emitting section 4...Light-emitting element 30, 30A, 30B, 30C...Multilayer substrate 31...Multilayer glass substrate 31A, 31B, 31C...Multilayer organic substrate (multilayer ceramic substrate) 32A, 32B, 32C, 32D, 32E, 32F...Multilayer wiring layer 33...Aperture 41A, 41B, 41E, 41F...Bump 45, 45A, 45B...Heat dissipation section 50, 50A, 50B, 50E, 50F...Connector 55, 61...Cover glass 100A-100M...Display device

Claims

1. A display device comprising a light-emitting section including a light-emitting element and a multilayer substrate including a multilayer wiring layer, wherein the light-emitting section and the multilayer wiring layer are joined via bumps.

2. The display device according to claim 1, wherein the light-emitting section includes a drive circuit section for driving the light-emitting element, and the drive circuit section and the multilayer wiring layer are joined via bumps.

3. The display device according to claim 2, wherein a connector is further connected to the multilayer wiring layer.

4. The display device according to claim 3, having a plurality of multilayer wiring layers, with a connector connected to each of the multilayer wiring layers.

5. The display device according to claim 4, wherein, in a cross-sectional view, two of the multilayer wiring layers are arranged spaced apart to the left and right, and the connector is connected to each of the multilayer wiring layers.

6. The display device according to claim 2, comprising a support substrate for supporting the drive circuit section, wherein the support substrate has a first surface and a second surface opposite to the first surface, the bumps are formed at predetermined locations on the first surface, and a heat dissipation section is provided on the second surface.

7. The display device according to claim 3, wherein the multilayer substrate includes a substrate having an opening, a sealing substrate is provided on the first surface side of the substrate, and the multilayer wiring layer is formed at a predetermined location on the second surface of the substrate opposite to the first surface.

8. The display device according to claim 7, comprising a light-transmitting sealing substrate, wherein the area on which the light-emitting element of the light-emitting portion is provided and a part of the sealing substrate face each other through the opening.

9. The display device according to claim 7, comprising a support substrate for supporting the drive circuit section, wherein the support substrate has a first surface and a second surface opposite to the first surface, the bumps are formed at predetermined locations on the first surface, and a heat dissipation section is provided on the second surface.

10. The display device according to claim 3, further comprising a sealing substrate laminated with respect to the light-emitting portion.

11. The display device according to claim 10, wherein the multilayer substrate is arranged adjacent to the sealing substrate.

12. The display device according to claim 11, wherein, in a cross-sectional view, a first multilayer substrate and a second multilayer substrate are arranged on each side of the sealing substrate, a first connector is connected to the multilayer wiring layer of the first multilayer substrate, and a second connector is connected to the multilayer wiring layer of the second multilayer substrate.

13. The display device according to claim 10, comprising a support substrate for supporting the drive circuit section, wherein the support substrate has a first surface and a second surface opposite to the first surface, the bumps are formed at predetermined locations on the first surface, and a heat dissipation section is provided on the second surface.

14. The display device according to claim 1, wherein the multilayer substrate has a structure in which the glass substrate and the multilayer wiring layer are integrated.

15. The display device according to claim 1, wherein the multilayer substrate has a structure in which a multilayer organic substrate and the multilayer wiring layer are integrated.

16. The display device according to claim 1, wherein the multilayer substrate has a structure in which the ceramic substrate and the multilayer wiring layer are integrated.

17. The display device according to claim 1, wherein the bump is made of a material that can be bonded at or below the heat resistance temperature of the light-emitting element, and the light-emitting element is an organic light-emitting element.

18. A method for manufacturing a display device, comprising soldering a connector to a multilayer wiring layer on a multilayer substrate, and then bonding bumps formed on a light-emitting portion including an organic light-emitting element to the multilayer wiring layer.

19. Electronic device having the display device described in claim 1.

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