Exposure method, exposure apparatus, and device manufacturing method

Abstract

In order to suppress unevenness in the effective photosensitive exposure amount of a photosensitive material in an area where exposure areas overlap, this exposure method comprises: performing, n times (n is a natural number of 2 or more), light irradiation processes for irradiating, with light, a first area on a photosensitive substrate; and performing, n times (n is a natural number of 2 or more), light irradiation processes for irradiating, with light, a second area on the photosensitive substrate, which is different from the first area and includes an overlapping area overlapping the first area and a non-overlapping area other than the overlapping area. The integrated exposure amount for the non-overlapping area by first to (n-1)-th light irradiation processes is smaller than a target integrated exposure amount, and the integrated exposure amount for the non-overlapping area by the first to n-th light irradiation processes is equal to or greater than the target integrated exposure amount.

Description

Exposure Method, Exposure Apparatus, and Device Manufacturing Method

[0001] It relates to an exposure method, an exposure apparatus, and a device manufacturing method.

[0002] As an apparatus for exposing and transferring a pattern formed on a mask onto a large substrate, a scanning exposure apparatus that scans a mask and a substrate relative to a projection optical system to perform exposure is known. By scanning exposure, the exposure field is enlarged in the scanning direction (travel direction), but in order to further enlarge the exposure field in a direction intersecting the scanning direction (non-scanning direction), an exposure apparatus that performs multiple scans of exposure with the exposure regions overlapping in the non-scanning direction is also known.

[0003] Furthermore, a method of exposing and transferring a pattern onto a substrate by one scan is also known (for example, Patent Document 1) by providing a plurality of projection optical systems in parallel in the non-scanning direction and performing exposure while overlapping a part of the exposure fields exposed by the plurality of projection optical systems.

[0004] Japanese Patent Application Laid-Open No. 2016-54230

[0005] According to the first disclosed aspect, the exposure method includes, with respect to a first exposure field and a second exposure field that are spaced apart from each other in a first direction and have different central positions in a second direction orthogonal to the first direction, moving a photosensitive substrate in the first direction, and irradiating a first region extending in the first direction on the photosensitive substrate with light by the first exposure field and the second exposure field in a first light irradiation process; and after the first light irradiation process, moving the photosensitive substrate in a direction parallel to the first direction with respect to the first exposure field and the second exposure field, and irradiating the first region with light by the first exposure field and the second exposure field in a second light irradiation process. The end of the first exposure field and the end of the second exposure field are located on a straight line parallel to the first direction. This is the exposure method.

[0006] According to a second aspect of the disclosure, the exposure method includes: performing a light irradiation process n times (n is a natural number of 2 or more) to irradiate a first region on a photosensitive substrate with light; and performing a light irradiation process n times (n is a natural number of 2 or more) to irradiate a second region on the photosensitive substrate, which is different from the first region and includes an overlapping region that overlaps with the first region and a non-overlapping region other than the overlapping region, wherein the cumulative exposure amount of the non-overlapping region from the first to the (n-1)th light irradiation process is less than a target cumulative exposure amount, and the cumulative exposure amount of the non-overlapping region from the first to the nth light irradiation process is equal to or greater than the target cumulative exposure amount.

[0007] According to a third aspect of the disclosure, the exposure method includes: performing a light irradiation process n times (where n is a natural number of 2 or more) to irradiate a first region on a substrate on which a layer of chemically amplified resist is provided with light; and performing a light irradiation process n times (where n is a natural number of 2 or more) to irradiate a second region on the substrate, which is different from the first region and includes an overlapping region that overlaps with the first region and a non-overlapping region other than the overlapping region, wherein the cumulative exposure amount of the non-overlapping region from the first to the (n-1)th light irradiation process is less than a target cumulative exposure amount, and the cumulative exposure amount of the non-overlapping region from the first to the nth light irradiation process is equal to or greater than the target cumulative exposure amount.

[0008] Furthermore, the configuration of the embodiments described later may be modified as appropriate, and at least a part of it may be replaced with other components. Moreover, the configuration elements whose arrangement is not particularly limited may be arranged in positions that can achieve their function, not limited to the arrangement disclosed in the embodiments.

[0009] Figure 1 is a side view showing the configuration of an exposure apparatus according to the first embodiment. Figure 2 is a perspective view showing a part of the exposure apparatus according to the first embodiment. Figure 3 is a magnified perspective view showing the fly-eye lens to the mask of the exposure apparatus according to the first embodiment. Figure 4(a) is a diagram showing the exposure field on the photosensitive substrate of each projection optical system in the first embodiment, and Figure 4(b) is a diagram showing the exposure region formed on the photosensitive substrate in the first embodiment. Figure 5 is a flowchart showing an example of processing performed by the control system according to the first embodiment. Figures 6(a) and 6(b) are diagrams (1) for explaining the processing procedure of Figure 5. Figures 7(a) and 7(b) are diagrams (2) for explaining the processing procedure of Figure 5. Figures 8(a) and 8(b) are diagrams (3) for explaining the processing procedure of Figure 5. Figures 9(a) and 9(b) are diagrams (4) for explaining the processing procedure of Figure 5. Figure 10 is a side view showing the configuration of an exposure apparatus according to the second embodiment. Figure 11(a) shows the exposure field, pattern formation region and large area on the photosensitive substrate in the second embodiment, and Figure 11(b) shows the exposure region formed on the photosensitive substrate in the second embodiment. Figures 12(a) and 12(b) are diagrams (1) for explaining the processing procedure of the second embodiment. Figures 13(a) and 13(b) are diagrams (2) for explaining the processing procedure of the second embodiment. Figures 14(a) and 14(b) are diagrams (3) for explaining the processing procedure of the second embodiment. Figure 15 is a diagram (4) for explaining the processing procedure of the second embodiment. Figure 16(a) shows the exposure field, pattern formation region and large area on the photosensitive substrate in the third embodiment, and Figure 16(b) shows the exposure region formed on the photosensitive substrate in the third embodiment. Figure 17 shows the exposure field, pattern formation region and large area on the photosensitive substrate in Modification 1. Figure 18(a) is a diagram illustrating modification 2, and Figure 18(b) is a diagram illustrating modification 3. Figure 19 is a side view showing the configuration of an exposure apparatus according to the fourth embodiment. Figure 20(a) is a diagram showing the exposure field on the photosensitive substrate of each projection optical system in the fourth embodiment, and Figure 20(b) is a diagram showing the exposure region formed on the photosensitive substrate in the fourth embodiment.Figures 21(a) and 21(b) are diagrams (1) illustrating the exposure procedure in the fourth embodiment. Figures 22(a) and 22(b) are diagrams (2) illustrating the exposure procedure in the fourth embodiment. Figures 23(a) and 23(b) are diagrams (3) illustrating the exposure procedure in the fourth embodiment. Figures 24(a) and 24(b) are diagrams (4) illustrating the exposure procedure in the fourth embodiment. Figure 25(a) shows the exposure field, pattern formation area and large area on the photosensitive substrate in the fifth embodiment, and Figure 25(b) shows the exposure area formed on the photosensitive substrate in the fifth embodiment. Figures 26(a) and 26(b) are diagrams (1) illustrating the processing procedure in the fifth embodiment. Figures 27(a) and 27(b) are diagrams (2) illustrating the processing procedure in the fifth embodiment. Figures 28(a) and 28(b) are diagrams (part 3) illustrating the processing procedure of the fifth embodiment. Figure 29(a) shows the exposure field, pattern formation region and large region on the photosensitive substrate in the sixth embodiment, and Figure 29(b) shows the exposure region formed on the photosensitive substrate in the sixth embodiment. Figure 30(a) is a diagram illustrating modified example 5, and Figure 30(b) is a diagram illustrating modified example 6.

[0010] 《First Embodiment》 The exposure apparatus 100 according to the first embodiment will be described below with reference to Figures 1 to 9.

[0011] (Configuration of the exposure apparatus) Figure 1 is a diagram illustrating the configuration of the exposure apparatus 100 according to the first embodiment. Figure 2 is a perspective view showing a part of the exposure apparatus 100.

[0012] As shown in Figure 2, the exposure apparatus 100 is equipped with six projection optical systems 19a to 19f. However, only two of these projection optical systems, 19a and 19b, are shown in Figure 1.

[0013] As shown in Figure 2, of the six projection optical systems 19a to 19f, three projection optical systems 19a, 19c, and 19e are arranged in a line in the Y direction. The other three projection optical systems 19b, 19d, and 19f are also arranged in a line in the Y direction and are positioned on the +X side (first direction) of the row of projection optical systems 19a, 19c, and 19e. Hereafter, projection optical systems 19a, 19c, and 19e may be referred to as the first row of projection optical systems 19a, 19c, and 19e, and projection optical systems 19b, 19d, and 19f may be referred to as the second row of projection optical systems 19b, 19d, and 19f.

[0014] The projection optical systems 19a, 19c, and 19e in the first row have their optical axes spaced apart at predetermined intervals in the Y direction. Similarly, the projection optical systems 19b, 19d, and 19f in the second row have their optical axes spaced apart at predetermined intervals in the Y direction.

[0015] Furthermore, the projection optical system 19b is positioned such that the position of its optical axis in the Y direction coincides with approximately the center of the line connecting the optical axis of projection optical system 19a and the optical axis of projection optical system 19c. Similarly, the projection optical system 19d is positioned such that the position of its optical axis in the Y direction coincides with approximately the center of the line connecting the optical axis of projection optical system 19c and the optical axis of projection optical system 19e. Furthermore, the projection optical system 19e is positioned such that the position of its optical axis in the Y direction coincides with approximately the center of the line connecting the optical axis of projection optical system 19d and the optical axis of projection optical system 19f.

[0016] The projection optical systems 19a to 19f are optical systems that form an upright, upright image with a projection magnification (lateral magnification) of +1x. Light is irradiated onto the photosensitive substrate 22 through the light-shielding pattern of the mask 15, and the pattern is exposed and transferred to the photosensitive material 222 of the photosensitive substrate 22.

[0017] As shown in Figure 1, the photosensitive substrate 22 includes a substrate 221 and a photosensitive material 222 formed on the upper surface of the substrate 221. The photosensitive substrate 22 is held by a substrate stage 27 via a substrate holder (not shown). The substrate stage 27 is capable of scanning on the substrate stage platen 28 in the X direction and moving in the Y direction by a linear motor (not shown) or the like. The position of the substrate stage 27 in the X direction is measured by a laser interferometer 25 via the position of a movable mirror 24 attached to the substrate stage 27. Similarly, the position of the substrate stage 27 in the Y direction is also measured by a laser interferometer (not shown).

[0018] The position detection optical system 23 detects the position of existing patterns, such as alignment marks, formed on the photosensitive substrate 22.

[0019] The mask 15 is held by the mask stage 16. The mask stage 16 is capable of scanning on the mask stage platen 17 in the X direction and moving in small increments in the Y direction by a linear motor (not shown) or the like. The position of the mask stage 16 in the X direction is measured by a laser interferometer 14 via the position of a movable mirror 13 attached to the mask stage 16. Similarly, the position of the mask stage 16 in the Y direction is also measured by a laser interferometer (not shown).

[0020] The control system CTR controls the XY positions of the mask stage 16 and the substrate stage 27 by controlling linear motors (not shown) etc. based on the measured values ​​of laser interferometers 14, 25, etc. When exposing the pattern of the mask 15 onto the photosensitive substrate 22, the control system CTR scans the mask 15 and the photosensitive substrate 22 at approximately the same speed in the X direction relative to the projection optical systems 19a to 19f, while maintaining the imaging relationship between the mask 15 and the photosensitive substrate 22 and the projection optical systems 19a to 19f.

[0021] Furthermore, the control system CTR controls the amount of illumination light (exposure light) emitted from the illumination optical systems ILa to ILf, which will be described later, and the relative scanning speed of the mask 15 and the photosensitive substrate 22 with respect to the projection optical systems 19a to 19f (scanning speed in the X direction of the mask stage 16 and the substrate stage 27).

[0022] In this specification, the direction in which the photosensitive substrate 22 is scanned during exposure (X direction) is also referred to as the "scanning direction." Furthermore, the direction within the plane of the photosensitive substrate 22 that is perpendicular to the X direction (Y direction) is also referred to as the "non-scanning direction." For example, the non-scanning direction is perpendicular to the optical axis of the projection optical system and intersects (perpendicular to) the scanning direction. The Z direction is perpendicular to both the X and Y directions. In Figure 1 and the following figures, the X, Y, and Z directions indicated by arrows are defined as the + direction.

[0023] The exposure apparatus 100 of this first embodiment includes a plurality of illumination optical systems ILa to ILf, each corresponding to one of the projection optical systems 19a to 19f. As an example, as shown in Figure 1, the illumination optical system ILa, corresponding to the projection optical system 19a, includes an input lens 8a, a fly-eye lens 11a, and a condenser lens 12a along the optical axis IXa. Similarly, the illumination optical system ILb, corresponding to the projection optical system 19b, includes an input lens 8b, a fly-eye lens 11b, and a condenser lens 12b along the optical axis IXb. The other illumination optical systems ILc to ILf similarly include input lenses 8c to 8f, fly-eye lenses 11c to 11f, and condenser lenses 12c to 12f, respectively.

[0024] Note that Figure 2 only shows the fly-eye lenses 11a to 11f and condenser lenses 12a to 12f among the components of each illumination optical system ILa to ILf. Also, projection optical systems 19c to 19f are not shown in Figure 1 because their positions in the X direction overlap with those of projection optical system 19a or 19b. Similarly, illumination optical systems ILc to ILf are not shown because their positions in the X direction overlap with those of illumination optical system ILa or ILb.

[0025] As shown in Figure 1, illumination light supplied from a light source 1 such as a lamp is supplied to each illumination optical system ILa to ILf via a light guide optical system including an elliptical mirror 2, a bent mirror 3, a relay lens 4, a bent mirror 5, a relay lens 6, and an optical fiber 7. The optical fiber 7 divides the illumination light incident on one input side 71 into five output sides 72a to 72f in roughly equal proportions. The illumination light emitted from each of the six output sides 72a to 72f of the optical fiber 7 is incident on the input lenses 8a to 8f in each illumination optical system ILa to ILf. The illumination light then passes through fly-eye lenses 11a to 11f and condenser lenses 12a to 12f before illuminating each illumination region MIa to MIf on the mask 15.

[0026] Figure 3 is an enlarged perspective view showing, as an example, the fly-eye lens 11c and condenser lens 12c included in the illumination optical system ILc, and the illumination area MIc on the mask 15.

[0027] The fly-eye lens 11c is formed by arranging multiple lens elements 110 in the X and Y directions, each having a rectangular cross-sectional shape (shape in the XY plane) that is elongated in the Y direction and similar in shape to the illumination region MIc. The incident surface of each lens element 110 (the upper surface in Figure 3, i.e., the +Z side surface) is a conjugate surface to the illumination region MIc on the mask 15, formed by the optical system consisting of each lens element 110 and the condenser lens 12c. Therefore, it is also a conjugate surface to the exposure field PIc on the photosensitive substrate 22. The illumination light irradiated onto the incident surface of each lens element 110 is superimposed on the illumination region MIc on the mask 15. As a result, the illuminance of the illumination light within the illumination region MIc is made approximately uniform.

[0028] The configurations of the other illumination optical systems ILa, ILb, ILd to ILf, excluding the illumination optical system ILc, are the same as those shown in Figure 3. The fly-eye lenses 11a to 11f are examples of optical integrators that superimpose illumination light onto their respective illumination regions MIa to MIf.

[0029] Each of the projection optical systems 19a to 19f is configured, for example, by a double-image optical system to form an upright, upright image. In this case, the optical system constituting the upper half of each projection optical system 19a to 19f forms an intermediate image plane 20 located near the midpoint of the optical axis direction PXa to PXf (Z direction) of each projection optical system 19a to 19f, where an intermediate image of the mask 15 pattern is formed. The intermediate image is then re-imaged by the optical system constituting the lower half of each projection optical system 19a to 19f, and an image corresponding to the mask 15 pattern is formed on the photosensitive substrate 22.

[0030] Since the intermediate image plane 20 is conjugate to the photosensitive substrate 22, by arranging field apertures 21a to 21f on the intermediate image plane 20 in each projection optical system 19a to 19f, the exposure fields PIa to PIf on the photosensitive substrate 22 by each projection optical system 19a to 19f can be defined.

[0031] Figure 4(a) shows the exposure fields PIa to PIf of the six projection optical systems 19a to 19f on the photosensitive substrate 22. The exposure fields PIa, PIc, and PIe of the first row of projection optical systems 19a, 19c, and 19e are trapezoids in which the shorter side of the two sides parallel to the Y direction is on the +X side and the longer side is on the -X side. However, the exposure field PIa, which is located at the end in the -Y direction, has its -Y end parallel to the X direction because the illumination light is blocked by the field aperture 21a.

[0032] The exposure fields PIb, PId, and PIf of the second row of projection optical systems 19b, 19d, and 19f are trapezoids in which the shorter side of the two sides parallel to the Y direction is on the -X side and the longer side is on the +X side. However, the exposure field PIf located at the +Y end has its +Y end parallel to the X direction because the illumination light is blocked by the field aperture 21f.

[0033] Figure 4(b) shows the exposure regions (scanning exposure fields) formed on the photosensitive substrate 22 when the photosensitive substrate 22 is scanned in the X direction by the substrate stage 27 and exposed by the exposure fields PIa to PIf shown in Figure 4(a). On the photosensitive substrate 22, exposure regions SIa to SIf are formed by scanning exposure, exposed by each exposure field PIa to PIf. In Figure 4(b), the exposure regions SIa, SIc, and SIe formed by the first row of projection optical systems 19a, 19c, and 19e are shown by dashed lines, and the exposure regions SIb, SId, and SIf formed by the second row of projection optical systems 19b, 19d, and 19f are shown by double-dashed lines.

[0034] These exposure regions SIa to SIf are extensions of the exposure fields PIa to PIf in the X direction due to scanning exposure in the X direction. The Y-direction (non-scanning direction) ends of each exposure region SIa to SIf overlap with the non-scanning direction ends of the adjacent exposure regions SIa to SIf. For example, the exposure region on the +Y side of exposure field PIa overlaps with the exposure region on the -Y side of exposure field PIb. The same applies to other exposure regions, so further explanation is omitted.

[0035] In overlapping regions Oa to Oe, where adjacent exposure areas overlap, exposure is performed in a time-divided manner. For example, exposure is performed by the projection optics 19a, 19c, and 19e of the first column, and then by the projection optics 19b, 19d, and 19f of the second column, or exposure is performed by the projection optics 19b, 19d, and 19f of the second column, and then by the projection optics 19a, 19c, and 19e of the first column. In other words, exposure is performed discretely in time in overlapping regions Oa to Oe. Of the exposure regions SIa to SIf, the areas other than overlapping regions Oa to Oe are non-overlapping regions NOa to NOf.

[0036] In photosensitive materials such as photoresists used in the manufacturing process of electronic devices, the effective amount of light exposure (hereinafter also referred to as "effective light exposure") is proportional to the cumulative exposure amount. That is, if the cumulative exposure amount is the same, the effective light exposure of the photosensitive material does not change whether the exposure is performed continuously over time or divided into multiple periods over time. Therefore, the effective light exposure of the photosensitive material is also a constant value.

[0037] However, with negative-type photosensitive materials, the effective photosensitivity of the material changes depending on whether the exposure is performed continuously over time or divided into multiple time segments, even if the cumulative exposure amount is the same. Specifically, when the exposure is performed in multiple time segments, the effective photosensitivity decreases compared to when it is performed continuously over time. In negative-type photosensitive materials, the portion of the material whose effective photosensitivity (cumulative exposure amount) is below a first threshold (target cumulative exposure amount) when exposed continuously over time remains soluble in the developer, while the portion whose effective photosensitivity (cumulative exposure amount) is equal to or greater than the first threshold (target cumulative exposure amount) becomes insoluble in the developer.

[0038] If the effective photosensitivity of the overlapping region differs from that of the non-overlapping region, the film thickness of the photosensitive material after development becomes uneven, causing changes in the line width and thickness of the pattern formed on the photosensitive material. Therefore, in international publication no. 2020 / 145044, for example, the exposure of the overlapping region is made higher than that of the non-overlapping region, thereby suppressing the difference between the effective photosensitivity of the non-overlapping region and the effective photosensitive region, and ensuring a uniform film thickness of the photosensitive material.

[0039] However, within the overlap region, areas with high and low effective photosensitivity may be formed. In this case, even if the exposure amount in the overlap region is increased to be higher than that in the non-overlap region in order to increase the effective photosensitivity of the overlap region, the cumulative exposure amount in the overlap region increases uniformly, and the difference in effective photosensitivity within the overlap region is not eliminated. Therefore, it is not possible to make the film thickness of the photosensitive material uniform. For this reason, it is desirable to suppress the unevenness of effective photosensitivity in the overlap region.

[0040] The inventors have diligently researched methods for suppressing unevenness in the effective photosensitive amount in the overlap region and have found that by repeatedly performing scan exposure while moving the photosensitive substrate 22 in a predetermined direction along the X direction, and then performing scan exposure while moving the photosensitive substrate 22 in the opposite direction to the predetermined direction, unevenness in the effective photosensitive amount in the overlap region can be suppressed.

[0041] Therefore, in the exposure apparatus 100 of this embodiment, a pattern is formed in the exposure region by repeatedly performing the following processes multiple times: scanning exposure (light irradiation process) of the pattern of the mask 15 onto the exposure region on the photosensitive substrate 22 while moving the photosensitive substrate 22 in a predetermined direction along the X direction, and scanning exposure (light irradiation process) of the pattern of the mask 15 onto the exposure region on the photosensitive substrate 22 while moving the photosensitive substrate 22 in the opposite direction to the predetermined direction. As mentioned above, the negative-type photosensitive material of this embodiment is a photosensitive material in which the portion where the effective exposure amount (cumulative exposure amount) when exposed continuously over time exceeds the target cumulative exposure amount (first threshold) becomes insoluble in the developer solution. Therefore, the target cumulative exposure amount for the non-overlapping regions NOa to NOf (see Figure 4(b)) after n scan exposures is set to be the same as the first threshold. On the other hand, the target cumulative exposure amount for the overlapping regions Oa to Oe (see Figure 4(b)) after n scan exposures is set to a second threshold that is greater than or equal to the first threshold. The purpose is to make the film thickness of the photosensitive material uniform by making the exposure amount of the overlapping region higher than that of the non-overlapping region, thereby suppressing the difference between the effective photosensitivity of the non-overlapping region and the effective photosensitivity of the overlapping region.

[0042] More specifically, for the non-overlap regions, the integrated exposure amount by the first to (n - 1)-th scan exposures is made smaller than the target integrated exposure amount (first threshold value), and the integrated exposure amount by the first to n-th scan exposures is made not less than the target integrated exposure amount (first threshold value). Similarly, for the overlap regions Oa to Oe, the integrated exposure amount by the first to (n - 1)-th scan exposures is made smaller than the target integrated exposure amount (second threshold value), and the integrated exposure amount by the first to n-th scan exposures is made not less than the target integrated exposure amount (second threshold value).

[0043] Here, when setting the target integrated exposure amount of the overlap regions Oa to Oe to be larger than that of the non-overlap regions NOa to NOf, a light-shielding member for shielding the portions corresponding to the non-overlap regions NOa to NOf on the incident surface side of the fly-eye lenses 11a to 11f may be provided, and the light-shielding amount of the light-shielding member for the portions corresponding to the non-overlap regions NOa to NOf may be adjusted by controlling the light-shielding member. Note that this is not the only method. In order to set the target integrated exposure amount of the overlap regions Oa to Oe to be larger than that of the non-overlap regions NOa to NOf, a light attenuation member (such as a light attenuation filter) for attenuating the light irradiated to the non-overlap regions Oa to Oe may be provided, and the light attenuation amount of the light attenuation member for the portions corresponding to the non-overlap regions NOa to NOf may be adjusted by controlling the light attenuation member.

[0044] (Regarding the exposure process) FIG. 5 is a flowchart showing an example of the process executed by the control system CTR according to the first embodiment. In the first embodiment, the case of performing an exposure process on a photosensitive substrate 22 having six pattern formation regions (S_1 to S_6) as shown in FIG. 6(a) will be described. In the exposure apparatus 100, as shown in FIG. 6(a), it is assumed that the substrate exchange position is set on the +X side when viewed from the exposure fields PIa to PIf (that is, the projection optical systems 19a to 19f).

[0045] With the substrate stage 27 positioned at the substrate replacement position in Fig. 6(a), the photosensitive substrate 22 is loaded / unloaded onto the substrate stage 27. It is assumed that the flowchart in Fig. 5 starts from the state where a new photosensitive substrate 22 is loaded onto the substrate stage 27.

[0046] In the first embodiment, it is assumed that the number of times (n times) of repeatedly performing scan exposure for one pattern formation region S_t is set to 8 times.

[0047] When the process in Fig. 5 starts, first in step S10, the control system CTR sets (initializes) a parameter t indicating the number of the pattern formation region to 1.

[0048] Next, in step S12, the control system CTR moves the substrate stage 27 to the exposure start position of the pattern formation region S_t (here S_1). Specifically, the substrate stage 27 is positioned from the substrate replacement position shown in Fig. 6(a) to the position shown in Fig. 6(b) (the position where the pattern formation region S_1 is located near the +X side of the exposure fields PIa to PIf of the projection optical systems 19a to 19f). Note that the exposure start position of the pattern formation region S_1 may be near the -X side of the projection optical systems 19a to 19f.

[0049] Next, in step S14, the control system CTR sets (initializes) a parameter u indicating the number of scan exposure times to 1.

[0050] Next, in step S16, the control system CTR performs the u-th (here the first time) scan exposure of the pattern formation region S_t (here S_1). Specifically, the control system CTR moves the substrate stage 27 in the -X direction and the mask stage 16 in the -X direction from the state in Fig. 6(b), and performs scan exposure of the pattern of the mask 15 on the pattern formation region S_1 of the photosensitive substrate 22. Fig. 7(a) shows the state during the first scan exposure of the pattern formation region S_1, and Fig. 7(b) shows the state after the first scan exposure of the pattern formation region S_1.

[0051] Furthermore, as shown in Figures 6(b) to 7(b), performing scan exposure while moving the substrate stage 27 (photosensitive substrate 22) in the -X direction will be referred to as "negative scan exposure" below.

[0052] Next, in step S18, the control system CTR determines whether the scan exposure count u is n (here, n = 8). If the determination in step S18 is negative, the process proceeds to step S20, where the control system CTR increments u by 1 (u = u + 1) and returns to step S16.

[0053] Returning to step S16, the control system CTR performs the u-th (second in this case) scan exposure of the pattern formation region S_t (S_1 in this case). Specifically, from the state shown in Figure 7(b), the control system CTR moves the substrate stage 27 in the +X direction and the mask stage 16 in the +X direction while scanning the pattern of the mask 15 onto the pattern formation region S_1 of the photosensitive substrate 22. Figure 8(a) shows the state during the second scan exposure of the pattern formation region S_1, and Figure 8(b) shows the state after the second scan exposure of the pattern formation region S_1 has been performed. In the following, scanning exposure while moving the substrate stage 27 (photosensitive substrate 22) in the +X direction will be referred to as "plus scan exposure".

[0054] Next, in step S18, the control system CTR determines whether the number of exposures u is n. If the determination in step S18 is negative, the process proceeds to step S20, where the control system CTR increments u by 1 (u = u + 1) and returns to step S16. Thereafter, negative scan exposure and positive scan exposure are repeated until the determination in step S18 is positive, that is, until n scan exposures are performed on region S_1. Note that the first to the nth scan exposures are performed with light containing the same peak wavelength, and can be performed with light to which the photosensitive material 222 is sensitive. For example, they can be performed with light having at least one peak wavelength of 365 nm (i-line), 405 nm (h-line), and 436 nm (g-line).

[0055] In this first embodiment, as described above, for the non-overlap regions NOa to NOf (see Figure 4(b)), the exposure amount for each scan is determined such that the cumulative exposure amount from the first to the (n-1)th scan exposure is less than the target cumulative exposure amount (first threshold), and the cumulative exposure amount from the first to the nth scan exposure is equal to or greater than the target cumulative exposure amount (first threshold). On the other hand, for the overlap regions Oa to Oe, the exposure amount for each scan is determined such that the cumulative exposure amount from the first to the (n-1)th scan exposure is less than the target cumulative exposure amount (second threshold), and the cumulative exposure amount from the first to the nth scan exposure is equal to or greater than the target cumulative exposure amount (second threshold).

[0056] Here, the exposure amounts for the first to the nth scan exposures may be the same or different. For example, the exposure amount for the kth exposure (where k is a natural number satisfying 1 ≤ k < n) can be made smaller than the exposure amount for the nth exposure. As another example, the exposure amounts can be gradually increased from the first to the nth exposure. Since the photosensitive material reacts more readily with each exposure, gradually increasing the exposure amount from the first to the nth exposure (i.e., making the exposure amount smaller with respect to the first exposure) can minimize the difference in effective photosensitivity within the overlap region.

[0057] Here, the control system CTR controls the amount of exposure in each non-overlap region by controlling the movement speed of the substrate stage 27 (and the movement speed of the mask stage 16) and at least one of the intensity of the light irradiated onto the photosensitive substrate 22. Furthermore, the control system CTR controls the amount of exposure in each overlap region Oa to Oe by controlling the movement speed of the substrate stage 27 (and the movement speed of the mask stage 16), the intensity of the light irradiated onto the photosensitive substrate 22, and at least one of the size of the portion of each exposure field PIa to PIf corresponding to the overlap region.

[0058] Here, the control system CTR maintains a constant positional relationship (distance) between the surface of the photosensitive substrate 22 and the image planes of the projection optical systems 19a to 19f during the first to nth scan exposures (maintaining the heights of the image planes of the projection optical systems 19a to 19f at substantially the same height). However, the control system CTR is not limited to this, and may adjust the positional relationship (distance) between the surface of the photosensitive substrate 22 and the image planes of the projection optical systems 19a to 19f during at least one of the first to nth scan exposures in order to control the exposure amount for each scan. In other words, the distance between the surface of the photosensitive substrate 22 and the image plane of the projection optical systems 19a to 19f in at least one scan exposure (the kth exposure (where k is a natural number satisfying 1 ≤ k ≤ n)) from the first to the nth scan exposure may be made different from the distance between the surface of the photosensitive substrate 22 and the image plane of the projection optical systems 19a to 19f in other scan exposures (the mth exposure (where m is a natural number satisfying 1 ≤ m ≤ n and m ≠ k)). For example, the distance between the surface of the photosensitive substrate 22 and the image plane of the projection optical systems 19a to 19f in any scan exposure other than the nth scan exposure can be made greater than the distance between the surface of the photosensitive substrate 22 and the image plane of the projection optical systems 19a to 19f in the nth scan exposure. In this case, the control system CTR may drive the substrate stage 27 to adjust the Z position of the photosensitive substrate 22 (the position in the optical axis direction of the projection optical systems 19a to 19f), or it may adjust the Z position of some of the optical elements of the projection optical systems 19a to 19f (for example, the lowest optical element (terminal element) of the projection optical systems 19a to 19f), or it may adjust both.

[0059] As described above, scan exposure is repeated on the pattern formation region S_1. If the determination in step S18 is affirmed, the control system CTR proceeds to step S22 and determines whether t is a value v (in this first embodiment, v = 6) that indicates the number of pattern formation regions on the photosensitive substrate 22. If the determination in step S22 is negative, the process proceeds to step S24 and t is incremented by 1 (t = t + 1). After that, the process returns to step S12.

[0060] Returning to step S12, the control system CTR moves (steps) the substrate stage 27 to the exposure start position of the pattern formation region S_t (in this case, S_2). Figure 9(a) shows the state in which the substrate stage 27 has moved in the -Y direction and is positioned at the exposure start position of the pattern formation region S_2.

[0061] Next, in step S14, the control system CTR sets u to 1. Then, the control system CTR performs n scan exposures (repeating negative scan exposures and positive scan exposures) on the pattern formation region S_2 (steps S14 to S20).

[0062] Thereafter, the above process is repeated until the judgment in step S22 is affirmed, and when n scan exposures for pattern formation regions S_3, S_4, S_5, and S_6 are completed, the control system CTR moves to step S26. When moving to step S26, the control system CTR moves the substrate stage 27 to the substrate replacement position. In this first embodiment, the pattern formation region S_6 is also repeatedly subjected to negative scan exposure → positive scan exposure →… in the same order as the other pattern formation regions S_1 to S_5. Therefore, the nth (8th) scan exposure for pattern formation region S_6 is a positive scan exposure (see Figure 9(b)). Also, as shown in Figure 9(b), in this first embodiment, the substrate replacement position is located on the +X side of the projection optical systems 19a to 19f (exposure fields PIa to PIf). Therefore, the substrate stage 27 can be smoothly moved to the substrate replacement position after the last scan exposure for the photosensitive substrate 22 is completed. This allows for the optimization of the throughput of the exposure apparatus 100.

[0063] In this first embodiment, since the number of scan exposures n for the last pattern formation region S_6 is even, the first scan exposure of the pattern formation region S_6 is set to a negative scan exposure so that the nth scan exposure becomes a positive scan exposure. Therefore, if the number of scan exposures n for the last pattern formation region S_6 is odd, the first scan exposure of the pattern formation region S_6 can be set to a positive scan exposure so that the nth scan exposure becomes a positive scan exposure. In this first embodiment, the case in which the first scan exposure of pattern formation regions S_1 to S_5 other than pattern formation region S_6 is set to a negative scan exposure has been described, but this is not limited to this, and may be changed as appropriate from the viewpoint of the number of scan exposures, throughput, etc.

[0064] With the above steps completed, the process shown in Figure 5 is finished. Subsequently, when a new photosensitive substrate 22 is loaded onto the substrate stage 27 at the substrate replacement position, the process shown in Figure 5 is executed again.

[0065] (Regarding the method of adjusting exposure parameters) The following describes the methods (1 to 3) for adjusting the exposure parameters used in scan exposure in the exposure apparatus 100.

[0066] (Part 1) Before performing the processing shown in Figure 5, the control system CTR loads the photosensitive substrate 22 onto the substrate stage 27 and exposes test patterns to each pattern formation region in the same manner as in Figure 5. The system then compares the position of the test pattern formed on the exposed photosensitive substrate 22 with the design position of the test pattern and adjusts the exposure parameters used during scan exposure based on the comparison result. The exposure parameters to be adjusted include both the exposure parameters used during positive scan exposure and the exposure parameters used during negative scan exposure, but are not necessarily limited to these two; at least one of them may be used.

[0067] (Part 2) Before performing the processing shown in Figure 5, the control system CTR loads the first photosensitive substrate onto the substrate stage 27 and exposes each pattern formation region with a test pattern in the same manner as in Figure 5. However, when exposing the first photosensitive substrate with a test pattern, the exposure amount is set to 0 during negative scan exposure, and the cumulative exposure amount during positive scan exposure is set to be equal to or greater than the target cumulative exposure amount (above the first threshold for non-overlapping regions, and above the second threshold for overlapping regions).

[0068] Furthermore, the control system CTR loads a second photosensitive substrate onto the substrate stage 27 and exposes each pattern formation region with a test pattern in the same manner as in Figure 5. However, when exposing the second photosensitive substrate with a test pattern, the exposure amount is set to 0 during positive scan exposure, and the cumulative exposure amount during negative scan exposure is set to be equal to or greater than the target cumulative exposure amount (above the first threshold for non-overlapping regions, and above the second threshold for overlapping regions).

[0069] Then, the position of the test pattern formed on the exposed first photosensitive substrate is compared with the designed position of the test pattern, and the exposure parameters used during actual positive scan exposure are adjusted based on the comparison results. In addition, the position of the test pattern formed on the exposed second photosensitive substrate is compared with the designed position of the test pattern, and the exposure parameters used during actual negative scan exposure are adjusted based on the comparison results.

[0070] This allows for accurate negative scan and positive scan exposure.

[0071] (Part 3) Before performing the processing shown in Figure 5, the control system CTR loads the first photosensitive substrate onto the substrate stage 27 and exposes each pattern formation region with a test pattern in the same manner as in Figure 5. However, when exposing the first photosensitive substrate with a test pattern, the exposure amount for the first scan exposure for each pattern formation region is set to 0, the exposure amount for negative scan exposure is set to 0, and the cumulative exposure amount for other positive scan exposures is set to be equal to or greater than the target cumulative exposure amount (above the first threshold for non-overlapping regions, and above the second threshold for overlapping regions).

[0072] Furthermore, the control system CTR loads a second photosensitive substrate onto the substrate stage 27 and exposes each pattern formation region with a test pattern in the same manner as in Figure 5. However, when exposing the second photosensitive substrate with a test pattern, the exposure amount for the first scan exposure for each pattern formation region is set to 0, the exposure amount for positive scan exposure is set to 0, and the cumulative exposure amount for other negative scan exposures is set to be equal to or greater than the target cumulative exposure amount (above the first threshold for non-overlapping regions, and above the second threshold for overlapping regions).

[0073] Furthermore, the control system CTR loads a third photosensitive substrate onto the substrate stage 27 and exposes each pattern formation region with a test pattern in the same manner as in Figure 5. However, when exposing the third photosensitive substrate with a test pattern, the exposure amount for the first scan exposure for each pattern formation region is set to be equal to or greater than the target integrated exposure amount (above the first threshold for non-overlapping regions, and above the second threshold for overlapping regions), and the exposure amount for other scan exposures is set to 0.

[0074] Then, the position of the test pattern formed on the exposed first photosensitive substrate is compared with the design position of the test pattern, and the exposure parameters used during positive scan exposure (excluding the first scan exposure) are adjusted based on the comparison result. Furthermore, the position of the test pattern formed on the exposed second photosensitive substrate is compared with the design position of the test pattern, and the exposure parameters used during negative scan exposure (excluding the first scan exposure) are adjusted based on the comparison result. In addition, the position of the test pattern formed on the exposed third photosensitive substrate is compared with the design position of the test pattern, and the exposure parameters used during the first scan exposure are adjusted based on the comparison result.

[0075] This allows for accurate negative scan exposure, positive scan exposure, and the first scan exposure.

[0076] In the exposure apparatus 100, the exposure parameters used during scan exposure can be adjusted by any of the exposure parameter adjustment methods described above.

[0077] As described in detail above, according to this first embodiment, a first region (e.g., exposure region SIa) on the photosensitive substrate 22 is scanned and exposed n times, and a second region (e.g., exposure region SIb) including an overlapping region (e.g., Oa) and a non-overlapping region (e.g., NOb) that overlap with the first region (e.g., exposure region SIa) is scanned and exposed n times. The cumulative exposure amount of the non-overlapping region from the first to the (n-1)th scan exposure is less than the target cumulative exposure amount, and the cumulative exposure amount of the non-overlapping region from the first to the nth scan exposure is equal to or greater than the target cumulative exposure amount. In this way, by repeatedly scanning and exposing the overlapping region and the non-overlapping region, unevenness in the effective photosensitivity between the overlapping region and the non-overlapping region can be suppressed, and the film thickness of the photosensitive material 222 can be made uniform.

[0078] Furthermore, in this first embodiment, the target integrated exposure amount (second threshold) of the overlapping region is set to be greater than or equal to the target integrated exposure amount (first threshold) of the non-overlapping region. For example, by making the target integrated exposure amount (second threshold) of the overlapping region greater than the target integrated exposure amount (first threshold) of the non-overlapping region, it is possible to suppress unevenness in the effective exposure amount between the overlapping region and the non-overlapping region when the effective exposure amount is low in the overlapping region.

[0079] Furthermore, in this first embodiment, when moving the photosensitive substrate 22 to the substrate exchange position in the +X direction after performing the nth scan exposure on the last pattern formation region (S_6) on the photosensitive substrate 22, if n is even, the first scan exposure is a negative scan exposure (exposure while moving the substrate stage 27 in the -X direction). If n is odd, the first scan exposure is a positive scan exposure (exposure while moving the substrate stage 27 in the +X direction). As a result, the nth scan exposure is a positive scan exposure, so that the substrate stage 27 can move smoothly to the substrate exchange position after the completion of the nth scan exposure. This optimizes the throughput of the exposure apparatus 100.

[0080] Furthermore, in this first embodiment, as shown in Figure 4(a), for example, focusing on the exposure field PIc (first exposure field) and exposure field PIb (second exposure field), the exposure fields PIc and PIb are spaced apart from each other in the X-axis direction (first direction), and the positions of the centers of each exposure field PIc and PIb are different in the Y-axis direction (second direction) which is perpendicular to the X-axis direction. Also, the ends (trapezoidal legs) of the exposure field PIc and the ends (trapezoidal legs) of the exposure field PIb are located on a straight line parallel to the X-axis direction. In this first embodiment, by moving the photosensitive substrate 22 in the X-axis direction relative to the exposure fields PIc and PIb, light is irradiated onto a predetermined region extending in the X-axis direction on the photosensitive substrate 22 (overlapping regions Oc, Ob, Oa and non-overlapping regions NOc, NOb in Figure 4(b)) by the exposure fields PIc and PIb (first light irradiation process). Furthermore, after the first light irradiation process, the photosensitive substrate 22 is moved in a direction parallel to the X-axis direction relative to the exposure fields PIc and PIb, thereby irradiating the predetermined region with light again using the exposure fields PIc and PIb (second light irradiation process). In this way, in this first embodiment, the predetermined region on the photosensitive substrate 22 can be scanned and exposed multiple times. By repeatedly scanning and exposing the predetermined region in this manner, unevenness in the effective photosensitivity between the overlapping regions Oc, Ob, Oa and the non-overlapping regions NOc, NOb can be suppressed, and the film thickness of the photosensitive material 222 can be made uniform.

[0081] Furthermore, in this first embodiment, in the first light irradiation process, light is irradiated onto the photosensitive substrate 22 through a mask 15 having a light-shielding pattern, and in the second light irradiation process, light is also irradiated onto the photosensitive substrate 22 through the mask 15. This suppresses unevenness in the effective light exposure when exposing and transferring a pattern to the photosensitive material 222 of the photosensitive substrate 22, and makes it possible to achieve uniformity in the film thickness of the photosensitive material 222.

[0082] Furthermore, in this first embodiment, in the second light irradiation process, the photosensitive substrate 22 is moved in the opposite direction to the movement direction in the first light irradiation process (step S16). As a result, the first and second light irradiation processes can be performed by the reciprocating movement of the photosensitive substrate 22, thereby improving throughput.

[0083] In the first embodiment described above, the case where the number of scan exposures n for one pattern formation region is 8 was explained, but it is not limited to this. n can be 2 or more. However, from the viewpoint of effectively suppressing unevenness in effective light sensitivity, it is preferable that n is 4 or more.

[0084] 《Second Embodiment》 The second embodiment will now be described. Figure 10 schematically shows the configuration of the exposure apparatus 200 according to the second embodiment. The exposure apparatus 200 of this second embodiment is equipped with one projection optical system 19 and, correspondingly, one illumination optical system IL.

[0085] In this second embodiment, as shown in Figure 11(a), pattern formation regions S_1 to S_6 are provided on the photosensitive substrate 22. Pattern formation region S_1 and pattern formation region S_2 form one large region S_12, and pattern formation region S_5 and pattern formation region S_6 form one large region S_56. That is, the photosensitive substrate 22 moves relative to the exposure field PI of the projection optical system 19 shown in Figure 11(a), and pattern formation region S_1 and pattern formation region S_2 are exposed, forming a pattern over the entire large region S_12. Also, the photosensitive substrate 22 moves relative to the exposure field PI of the projection optical system 19, and pattern formation region S_5 and pattern formation region S_6 are exposed, forming a pattern over the entire large region S_56.

[0086] Figure 11(b) shows the exposure regions (scanning exposure fields) SIa and SIb formed on the photosensitive substrate 22 when the pattern formation region S_1 and the pattern formation region S_2 are sequentially exposed using the exposure field PI shown in Figure 11(a).

[0087] The +Y direction end of exposure region SIa and the -Y direction end of exposure region SIb overlap. In this second embodiment, the overlapping region of exposure regions SIa and SIb is called the overlapping region (overlapping region) Oa, and the regions other than overlapping region Oa are called non-overlapping regions (non-overlapping regions) NOa and NOb. When exposing the large region S_12 in Figure 11(a), for convenience, forming exposure region SIa will be referred to as "scan exposure of pattern formation region S_1," and forming exposure region SIb will be referred to as "scan exposure of pattern formation region S_2." Also, when exposing the large region S_56 in Figure 11(a), for convenience, forming exposure region SIa will be referred to as "scan exposure of pattern formation region S_6," and forming exposure region SIb will be referred to as "scan exposure of pattern formation region S_5."

[0088] (Regarding the exposure process) In the exposure apparatus 200 of this second embodiment, in order to suppress the difference between the effective light exposure amount of the non-overlapping region and the effective light exposure amount of the overlapping region, for example, when exposing a large region S_12, the process of scanning and exposing a pattern to the pattern formation region S_1 (exposure region SIa) while moving the photosensitive substrate 22 in a predetermined direction along the X direction (light irradiation process), and the process of scanning and exposing a pattern to the pattern formation region S_2 (exposure region SIb) while moving the photosensitive substrate 22 in the opposite direction to the predetermined direction (light irradiation process) are repeated multiple times. The same applies to the large region S_56.

[0089] The following describes the exposure procedure for the large region S_12 based on Figures 12(a) to 15.

[0090] Figure 12(a) shows the state in which the photosensitive substrate 22 (substrate stage 27) is positioned at the exposure start position of the large region S_12. This exposure start position of the large region S_12 is assumed to be the position in which the exposure field PI of the projection optical system 19 is located near the +X edge of the pattern formation region S_1.

[0091] From the state shown in Figure 12(a), as shown in Figure 12(b), the control system CTR moves the substrate stage 27 (photosensitive substrate 22) in the +X direction and the mask stage 16 in the +X direction, while scanning the pattern of the mask 15 onto the pattern formation region S_1 (i.e., performing positive scan exposure).

[0092] Next, as shown in Figure 13(a), the control system CTR moves the substrate stage 27 (photosensitive substrate 22) in the -Y direction (stepping), and as shown in Figure 13(b), moves the substrate stage 27 (photosensitive substrate 22) in the -X direction, while simultaneously moving the mask stage 16 in the -X direction, and scanning exposure (i.e., negative scan exposure) of the pattern of the mask 15 onto the pattern formation region S_2.

[0093] Next, as shown in Figure 14(a), the control system CTR moves the substrate stage 27 (photosensitive substrate 22) in the +X direction and the mask stage 16 in the +X direction, while scanning and exposing the pattern of the mask 15 to the pattern formation region S_2 (plus scan exposure).

[0094] Next, as shown in Figure 14(b), the control system CTR moves the substrate stage 27 (photosensitive substrate 22) in the +Y direction (stepping). Then, as shown in Figure 15, the control system CTR moves the substrate stage 27 (photosensitive substrate 22) in the -X direction, and at the same time moves the mask stage 16 in the -X direction, while scanning the pattern of the mask 15 onto the pattern formation region S_1 (i.e., negative scan exposure).

[0095] Subsequently, the process of positive scan exposure to pattern formation region S_1, negative scan exposure to pattern formation region S_2, positive scan exposure to pattern formation region S_2, and negative scan exposure to pattern formation region S_1 is repeated in this order. Once each pattern formation region has been scanned and exposed a predetermined number of times (n times), the exposure process for the large region S_12 is terminated.

[0096] The exposure amount for each scan exposure is the same as in the first embodiment. That is, the target cumulative exposure amount for non-overlapping regions NOa and NOb from n scan exposures is set to the same value as the first threshold in the first embodiment. On the other hand, the target cumulative exposure amount for overlapping region Oa from n scan exposures is also set to a second threshold that is greater than or equal to the first threshold, as in the first embodiment. For the non-overlapping regions, the cumulative exposure amount from the first to the (n-1)th scan exposure is set to be less than the target cumulative exposure amount (first threshold), and the cumulative exposure amount from the first to the nth scan exposure is set to be greater than or equal to the target cumulative exposure amount (first threshold). Similarly, for overlapping regions Oa to Oe, the cumulative exposure amount from the first to the (n-1)th scan exposure is set to be less than the target cumulative exposure amount (second threshold), and the cumulative exposure amount from the first to the nth scan exposure is set to be greater than or equal to the target cumulative exposure amount (second threshold). Furthermore, other processes, such as the method for controlling the exposure amount, are the same as in the first embodiment.

[0097] The same applies to the large area S_56. In the scan exposure of this large area S_56, if the substrate replacement position is on the +X side of the projection optical system 19, the direction of the first scan exposure is determined so that the nth scan exposure of the pattern formation area S_6 is positive scan exposure. In this way, after the last scan exposure of the photosensitive substrate 22 is completed, the movement to the substrate replacement position can be performed smoothly.

[0098] Furthermore, for pattern formation regions S_3 and S_4, where scan exposure is performed between large regions S_12 and S_56, the pattern will be formed with only one scan exposure. Therefore, the exposure amount is determined so that it exceeds the target integrated exposure amount (first threshold) with only one scan exposure.

[0099] As described above, according to this second embodiment, since the overlapping region and the non-overlapping region are repeatedly scanned and exposed, unevenness in the effective photosensitive amount in the overlapping region can be suppressed and the film thickness of the photosensitive material 222 can be made uniform. In addition, the second embodiment provides other effects similar to those of the first embodiment.

[0100] <Third Embodiment> The third embodiment will now be described. In the second embodiment described above, as shown in Figure 11(a), a large area S_12 is formed by pattern formation area S_1 and pattern formation area S_2, and a large area S_56 is formed by pattern formation area S_5 and pattern formation area S_6, among the pattern formation areas S_1 to S_6 provided on the photosensitive substrate 22. In contrast, in this third embodiment, as shown in Figure 16(a), a large area S_16 is formed by two pattern formation areas S_1 and S_6 arranged in the scan direction (X-axis direction), a large area S_25 is formed by two pattern formation areas S_2 and S_5, and a large area S_34 is formed by two pattern formation areas S_3 and S_4. In other words, as the photosensitive substrate 22 moves relative to the exposure field PI of the projection optical system 19 shown in Figure 16(a), the pattern formation regions S_1 and S_6 are exposed, and a pattern is formed over the entire large region S_16. The same applies to the large regions S_25 and S_34.

[0101] Figure 16(b) shows the exposure regions (scanning exposure fields) SIa and SIb formed on the photosensitive substrate 22 when the pattern formation region S_1 and the pattern formation region S_6 are sequentially exposed using the exposure field PI shown in Figure 16(a).

[0102] The -X-direction end of exposure region SIa and the +X-direction end of exposure region SIb overlap. In this third embodiment, the overlapping region of exposure regions SIa and SIb is called the overlapping region (overlapping region) Oa', and the regions other than the overlapping region Oa' are called the non-overlapping regions (non-overlapping regions) NOa' and NOb'. When exposing the large region S_16 in Figure 16(a), for convenience, forming exposure region SIa will be referred to as "scan exposure of pattern formation region S_1," and forming exposure region SIb will be referred to as "scan exposure of pattern formation region S_2."

[0103] (Regarding the exposure process) In the exposure apparatus 200 of this third embodiment, in order to suppress the difference between the effective light exposure of the non-overlapping region and the effective light exposure of the overlapping region, for example, when exposing a large region S_16, the photosensitive substrate 22 is moved in the +X direction or -X direction while performing a scan exposure process (light irradiation process) on the pattern formation region S_1 (exposure region SIa) multiple times (for example, 8 times), and then the photosensitive substrate 22 is moved in the +X direction or -X direction while performing a scan exposure process (light irradiation process) on the pattern formation region S_6 (exposure region SIb) multiple times (for example, 8 times). When exposing a large region S_16, the pattern formation region S_6 and then S_1 may be exposed in that order.

[0104] Furthermore, when exposing large area S_25 after large area S_16, the photosensitive substrate 22 is moved in the +X direction or -X direction while performing a scan exposure process (light irradiation process) on the pattern formation area S_2 (exposure area SIa) multiple times (for example, 8 times). After that, the photosensitive substrate 22 is moved in the +X direction or -X direction while performing a scan exposure process (light irradiation process) on the pattern formation area S_5 (exposure area SIb) multiple times (for example, 8 times). Note that when exposing large area S_25, the pattern formation areas S_5 and S_2 may be exposed in that order.

[0105] Furthermore, when exposing large area S_34 after large area S_25, the photosensitive substrate 22 is moved in the +X direction or -X direction while performing a scan exposure process (light irradiation process) on the pattern formation area S_3 (exposure area SIa) multiple times (for example, 8 times), and then the photosensitive substrate 22 is moved in the +X direction or -X direction while performing a scan exposure process (light irradiation process) on the pattern formation area S_4 (exposure area SIb) multiple times (for example, 8 times). Note that when exposing large area S_34, the pattern formation areas S_4 and S_3 may be exposed in that order.

[0106] The exposure amount for each scan exposure is the same as in the first and second embodiments. That is, the target integrated exposure amount for the non-overlapping regions NOa' and NOb' by n scan exposures (where n is, for example, 8) is set to the same value as the first threshold in the first and second embodiments. On the other hand, the target integrated exposure amount for the overlapping region Oa' by n scan exposures is also set to a second threshold that is greater than or equal to the first threshold, similar to the first and second embodiments. For the non-overlapping regions, the integrated exposure amount from the first to the (n-1)th scan exposure is set to be less than the target integrated exposure amount (first threshold), and the integrated exposure amount from the first to the nth scan exposure is set to be greater than or equal to the target integrated exposure amount (first threshold). Similarly, for the overlap region Oa', the cumulative exposure amount from the first to the (n-1)th scan exposure is set to be less than the target cumulative exposure amount (second threshold), and the cumulative exposure amount from the first to the nth scan exposure is set to be equal to or greater than the target cumulative exposure amount (second threshold). Other processing, such as the method for controlling the exposure amount, is the same as in the first and second embodiments.

[0107] Furthermore, in the scan exposure of the large area S_34, if the substrate replacement position is on the +X side of the projection optical system 19, the direction of the first scan exposure is determined so that the nth scan exposure of the pattern formation area S_4 (or S_3) to be exposed later becomes a positive scan exposure. In this way, after the last scan exposure of the photosensitive substrate 22 is completed, the movement to the substrate replacement position can be performed smoothly.

[0108] As described above, according to this third embodiment, it is possible to suppress unevenness in the effective photosensitive amount in the overlap region Oa' and to make the film thickness of the photosensitive material 222 uniform.

[0109] In the third embodiment described above, a case was explained in which a large area is formed by two pattern-forming regions aligned in the scanning direction. However, the invention is not limited to this, and a large area may be formed by three or more pattern-forming regions aligned in the scanning direction.

[0110] (Modification 1) The large regions S_16, S_25, and S_34 described in the third embodiment may be exposed using the exposure apparatus 100 described in the first embodiment.

[0111] That is, as shown in Figure 17, each pattern formation region S_1 to S_6 that forms the large regions S_16, S_25, and S_34 may be exposed using a plurality (for example, six) of projection optical systems 19a to 19f (exposure fields PIa to PIf). In this case as well, similar to the third embodiment, in order to suppress the difference between the effective photosensitivity of the non-overlapping regions NOa' and NOb' (see Figure 16(b)) of the large region S_16 and the effective photosensitivity of the overlapping region Oa' (see Figure 16(b)), when exposing the large region S_16, a process (light irradiation process) is performed in which the pattern is scanned and exposed multiple times (for example, eight times) on the pattern formation region S_1 while moving the photosensitive substrate 22 in the +X direction or -X direction, and thereafter, a process (light irradiation process) is performed in which the pattern is scanned and exposed multiple times (for example, eight times) on the pattern formation region S_6 while moving the photosensitive substrate 22 in the +X direction or -X direction. Furthermore, scan exposure is performed on the large areas S_25 and S_34 in the same way as on the large area S_16.

[0112] According to this modified example 1, it is possible to suppress unevenness in the effective photosensitivity in the overlap region Oa' and to achieve uniformity in the film thickness of the photosensitive material 222. Furthermore, in the overlap regions Oa to Oe and non-overlap regions NOa to NOf located within each pattern formation region S_1 to S_6 shown in Figure 4(b), it is possible to suppress unevenness in the effective photosensitivity and achieve uniformity in the film thickness of the photosensitive material 222, similar to the first embodiment.

[0113] (Modification 2) In addition, the large regions S_12 and S_56 described in the second embodiment may be exposed using the exposure apparatus 100 described in the first embodiment.

[0114] That is, as shown in Figure 18(a), each pattern formation region S_1 to S_6 that forms the large regions S_12 and S_56 may be exposed using a plurality (for example, six) of projection optical systems 19a to 19f (exposure fields PIa to PIf). In this case as well, similar to the second embodiment, in order to suppress the difference between the effective photosensitivity of the non-overlapping regions NOa and NOb (see Figure 11(b)) of the large region S_12 and the effective photosensitivity of the overlapping region Oa (see Figure 11(b)), when exposing the large region S_12, a process (light irradiation process) is performed in which the pattern is scanned and exposed multiple times (for example, eight times) on the pattern formation region S_1 while moving the photosensitive substrate 22 in the +X direction or -X direction, and thereafter, a process (light irradiation process) is performed in which the pattern is scanned and exposed multiple times (for example, eight times) on the pattern formation region S_2 while moving the photosensitive substrate 22 in the +X direction or -X direction. Furthermore, scan exposure is performed on the large area S_56 in the same way as on the large area S_12.

[0115] According to this modified example 2, it is possible to suppress unevenness in the effective photosensitivity in the overlapping region Oa of each pattern formation region shown in Figure 11(b), and to achieve uniformity in the film thickness of the photosensitive material 222. Furthermore, in the overlapping regions Oa to Oe and non-overlapping regions NOa to NOf within each pattern formation region S_1 to S_6 shown in Figure 4(b), it is possible to suppress unevenness in the effective photosensitivity and achieve uniformity in the film thickness of the photosensitive material 222, similar to the first embodiment.

[0116] (Modification 3) In addition, a large area S_1256 including multiple (four in Figure 18(b)) pattern formation areas S_1, S_2, S_5, and S_6 arranged vertically and horizontally, as shown in Figure 18(b), may be exposed using the exposure apparatus 100 described in the first embodiment or the exposure apparatus 200 described in the second embodiment. In this case as well, unevenness in the effective photosensitive amount in the overlapping areas of each pattern formation area can be suppressed, and the film thickness of the photosensitive material 222 can be made uniform. Furthermore, when using the exposure apparatus 100 of Figure 1, in the overlapping areas Oa to Oe and the non-overlapping areas NOa to NOf shown in Figure 4(b), unevenness in the effective photosensitive amount can be suppressed, and the film thickness of the photosensitive material 222 can be made uniform, similar to the first embodiment.

[0117] In the first to third embodiments and modifications 1 to 3 described above, the case in which the photosensitive material coated on the photosensitive substrate 22 is a negative-type photosensitive material was described, but the invention is not limited to this. The photosensitive material may also be a positive-type photosensitive material, that is, a photosensitive material in which the portion in which the effective exposure amount (cumulative exposure amount) when continuously exposed over time is less than a first threshold (target cumulative exposure amount) remains insoluble in the developer, and the portion in which the effective exposure amount (cumulative exposure amount) is equal to or greater than the first threshold (target cumulative exposure amount) becomes soluble in the developer.

[0118] 《Fourth Embodiment》 Next, a fourth embodiment will be described. The exposure apparatus of this fourth embodiment is the same as the exposure apparatus 100 of the first embodiment (Figures 1 to 3), but is characterized in that a photosensitive substrate 22' (see Figure 19) with a layer of chemically amplified resist on its surface is used instead of the photosensitive substrate 22. The photosensitive substrate 22' includes a substrate 221 and a chemically amplified resist 222' provided on the surface of the substrate 221. The chemically amplified resist 222' can be of the type that is applied (coated) to the surface of the substrate 221, or of the type that is pressed onto the surface of the substrate 221 (called a dry film resist).

[0119] Here, when exposing a photosensitive substrate 22' on which a layer of chemically amplified resist 222' is provided on the surface, the film thickness is thick (for example, 10 μm or more), or the target integrated exposure amount is large, and the difference in dose (exposure energy per unit area) between the exposed area (exposed area) and the unexposed area (non-exposed area) is large (for example, the target integrated exposure amount is 1000 mJ / cm²). 2 If the above conditions are met, the uniformity (stability) of the exposure line width (CD) may be reduced. Furthermore, if a chemically amplified resist 222' is used, similar to the case where a negative-type photosensitive material 222 is used as in the first to third embodiments, unevenness in the effective photosensitive amount in the overlap region may occur.

[0120] Therefore, in this fourth embodiment, it is necessary to modify the exposure method so as to reduce the occurrence of phenomena specific to chemically amplified resists.

[0121] Figure 20(a) shows the exposure fields PIa to PIf of the six projection optical systems 19a to 19f on the photosensitive substrate 22'. In this fourth embodiment, as in the first embodiment, the exposure fields PIa, PIc, and PIe of the first row of projection optical systems 19a, 19c, and 19e are trapezoids in which the shorter side of the two sides parallel to the Y direction is on the +X side and the longer side is on the -X side. However, the exposure field PIa located at the end in the -Y direction has its -Y end parallel to the X direction because the illumination light is blocked by the field aperture 21a. Also, the exposure fields PIb, PId, and PIf of the second row of projection optical systems 19b, 19d, and 19f are trapezoids in which the shorter side of the two sides parallel to the Y direction is on the -X side and the longer side is on the +X side. However, the exposure field PIf, which is located at the +Y end, has its +Y end parallel to the X direction because the illumination light is blocked by the field aperture 21f.

[0122] Figure 20(b) shows the exposure regions (scanning exposure fields) formed on the photosensitive substrate 22' when the photosensitive substrate 22' is scanned in the X direction by the substrate stage 27 and exposed by the exposure fields PIa to PIf shown in Figure 20(a). On the photosensitive substrate 22', exposure regions SIa to SIf are formed by scanning exposure, exposed by each exposure field PIa to PIf. In Figure 20(b), the exposure regions SIa, SIc, and SIe formed by the first row of projection optical systems 19a, 19c, and 19e are shown by dashed lines, and the exposure regions SIb, SId, and SIf formed by the second row of projection optical systems 19b, 19d, and 19f are shown by double-dashed lines.

[0123] These exposure regions SIa to SIf are extensions of the exposure fields PIa to PIf in the X direction due to scanning exposure in the X direction. The Y-direction (non-scanning direction) ends of each exposure region SIa to SIf overlap with the non-scanning direction ends of the adjacent exposure regions SIa to SIf. For example, the exposure region on the +Y side of exposure field PIa overlaps with the exposure region on the -Y side of exposure field PIb. The same applies to other exposure regions, so further explanation is omitted.

[0124] In overlapping regions Oa to Oe, where adjacent exposure areas overlap, exposure is performed in a time-divided manner. For example, exposure is performed by the projection optics 19a, 19c, and 19e of the first column, and then by the projection optics 19b, 19d, and 19f of the second column, or exposure is performed by the projection optics 19b, 19d, and 19f of the second column, and then by the projection optics 19a, 19c, and 19e of the first column. In other words, exposure is performed discretely in time in overlapping regions Oa to Oe. Of the exposure regions SIa to SIf, the areas other than overlapping regions Oa to Oe are non-overlapping regions NOa to NOf.

[0125] In this fourth embodiment, the chemically amplified resist 222' used also exhibits the same effect on photosensitivity as described above, where exposure is performed continuously versus in multiple time segments, even if the cumulative exposure amount is the same. Specifically, exposure in multiple time segments results in a lower effective exposure compared to continuous exposure. When the chemically amplified resist 222' is negative, the acid generated from the acid generator upon exposure undergoes a catalytic reaction through heat treatment, causing the polymer components in the photosensitive material to crosslink or become insoluble, resulting in the portion exceeding the target cumulative exposure amount becoming insoluble in the developer. When the chemically amplified resist 222' is positive, the acid generated from the acid generator upon exposure undergoes a catalytic reaction through heat treatment, deprotecting the protective groups of the polymer components in the photosensitive material, resulting in the portion exceeding the target cumulative exposure amount becoming soluble in the developer.

[0126] If the effective photosensitivity of the overlapping region differs from that of the non-overlapping region, the uniformity (stability) of the exposure linewidth (CD) decreases. The inventors have diligently researched methods to suppress unevenness in the effective photosensitivity of the overlapping region and have found that by repeatedly performing scan exposure while moving the photosensitive substrate 22 in a predetermined direction along the X direction, and then performing scan exposure while moving the photosensitive substrate 22 in the opposite direction to the predetermined direction, unevenness in the effective photosensitivity of the overlapping region can be suppressed.

[0127] Therefore, in the exposure apparatus of this embodiment, a pattern is formed in the exposure region by repeatedly performing the following processes multiple times: scanning exposure (light irradiation process) of the pattern of the mask 15 onto the exposure region on the photosensitive substrate 22' while moving the photosensitive substrate 22' in a predetermined direction along the X direction, and scanning exposure (light irradiation process) of the pattern of the mask 15 onto the exposure region on the photosensitive substrate 22 while moving the photosensitive substrate 22 in the opposite direction to the predetermined direction. At this time, the target integrated exposure amount for the non-overlap regions NOa to NOf (see Figure 20(b)) by n scan exposures is set to be the same as the first threshold. On the other hand, the target integrated exposure amount for the overlap regions Oa to Oe (see Figure 4(b)) by n scan exposures is set to a second threshold that is greater than or equal to the first threshold. This is to suppress the difference between the effective photosensitivity of the non-overlap region and the effective photosensitivity of the overlap region by making the exposure amount of the overlap region higher than the exposure amount of the non-overlap region.

[0128] More specifically, for non-overlapping regions, the cumulative exposure from the first to the (n-1)th scan exposure is set to be less than the target cumulative exposure (first threshold), while the cumulative exposure from the first to the nth scan exposure is set to be equal to or greater than the target cumulative exposure (first threshold). Similarly, for overlapping regions Oa to Oe, the cumulative exposure from the first to the (n-1)th scan exposure is set to be less than the target cumulative exposure (second threshold), while the cumulative exposure from the first to the nth scan exposure is set to be equal to or greater than the target cumulative exposure (second threshold).

[0129] Here, if the target integrated exposure amount for overlapping regions Oa to Oe is set to be greater than the target integrated exposure amount for non-overlap regions NOa to NOf, a light-shielding member is provided on the incident surface side of the fly-eye lenses 11a to 11f to shield the portion corresponding to the non-overlap regions NOa to NOf, and the amount of light shielding by the light-shielding member in the portion corresponding to the non-overlap regions NOa to NOf is adjusted by controlling the light-shielding member. However, this is not limited to this, in order to set the target integrated exposure amount for overlapping regions Oa to Oe to be greater than the target integrated exposure amount for non-overlap regions NOa to NOf, a light-reducing member (such as a light-reducing filter) is provided to reduce the light irradiated to the non-overlap regions Oa to Oe, and the amount of light reduction by the light-reducing member in the portion corresponding to the non-overlap regions NOa to NOf is adjusted by controlling the light-reducing member.

[0130] (Regarding the exposure process) The exposure process according to the fourth embodiment of this invention will be described below based on Figures 21(a) to 24(b). In this fourth embodiment, we will describe the case in which an exposure process is performed on a photosensitive substrate 22 having six pattern formation regions (S_1 to S_6) as shown in Figure 21(a). In the exposure apparatus 100, as shown in Figure 21(a), the substrate replacement position is set on the +X side when viewed from the exposure field PIa to PIf (i.e., the projection optical system 19a to 19f).

[0131] With the substrate stage 27 positioned at the substrate replacement position shown in Figure 21(a), the photosensitive substrate 22 is loaded onto / unloaded onto the substrate stage 27. The exposure process begins once the new photosensitive substrate 22 is loaded onto the substrate stage 27.

[0132] In this fourth embodiment, the number of times (n times) that scan exposure is repeated for one pattern formation region S_t is set to 8 times.

[0133] When the exposure process begins, the substrate stage 27 moves from the state shown in Figure 21(a) to the exposure start position of the pattern formation region S_1, as shown in Figure 21(b). Specifically, the substrate stage 27 is positioned so that the pattern formation region S_1 is located near the +X side of the exposure field PIa to PIf of the projection optical systems 19a to 19f. Note that the exposure start position of the pattern formation region S_1 may also be near the -X side of the projection optical systems 19a to 19f.

[0134] Subsequently, the first scan exposure of the pattern formation region S_1 is performed. Specifically, from the state shown in Figure 21(b), as shown in Figures 22(a) and 22(b), the substrate stage 27 moves in the -X direction, and the mask stage 16 also moves in the -X direction, performing a scan exposure (negative scan exposure) of the pattern of the mask 15 onto the pattern formation region S_1 of the photosensitive substrate 22'.

[0135] Next, a second scan exposure of the pattern formation region S_1 is performed. Specifically, from the state shown in Figure 22(b), as shown in Figures 23(a) and 23(b), the substrate stage 27 is moved in the +X direction, and the mask stage 16 is also moved in the +X direction, and the pattern of the mask 15 is scanned and exposed (plus scan exposure) to the pattern formation region S_1 of the photosensitive substrate 22'.

[0136] Subsequently, negative scan exposure and positive scan exposure are repeated until n (eight) scan exposures are performed on region S_1. Note that the first to nth scan exposures are performed with light containing the same peak wavelength, and the light to which the chemically amplified resist 222' is sensitive can be used. For example, it can be performed with light having at least one peak wavelength of 365 nm (i-line), 405 nm (h-line), and 436 nm (g-line).

[0137] In this fourth embodiment, as described above, for the non-overlap regions NOa to NOf (see Figure 20(b)), the exposure amount for each scan is determined such that the cumulative exposure amount from the first to the (n-1)th scan exposure is less than the target cumulative exposure amount (first threshold), and the cumulative exposure amount from the first to the nth scan exposure is equal to or greater than the target cumulative exposure amount (first threshold). On the other hand, for the overlap regions Oa to Oe, the exposure amount for each scan is determined such that the cumulative exposure amount from the first to the (n-1)th scan exposure is less than the target cumulative exposure amount (second threshold), and the cumulative exposure amount from the first to the nth scan exposure is equal to or greater than the target cumulative exposure amount (second threshold).

[0138] Here, the exposure amounts for the first to the nth scan exposures may be the same or different. For example, the exposure amount for the kth exposure (where k is a natural number satisfying 1 ≤ k < n) can be made smaller than the exposure amount for the nth exposure. As another example, the exposure amounts can be gradually increased from the first to the nth exposure. Since the photosensitive material reacts more readily with each exposure, gradually increasing the exposure amount from the first to the nth exposure (i.e., making the exposure amount smaller with respect to the first exposure) can minimize the difference in effective photosensitivity within the overlap region.

[0139] To control the exposure amount for each exposure in the non-overlap region, it is sufficient to control at least one of the following: the movement speed of the substrate stage 27 (and the movement speed of the mask stage 16) and the intensity of the light irradiated onto the photosensitive substrate 22'. Furthermore, to control the exposure amount for each exposure in the overlap region Oa to Oe, it is sufficient to control at least one of the following: the movement speed of the substrate stage 27 (and the movement speed of the mask stage 16), the intensity of the light irradiated onto the photosensitive substrate 22, and the size of the portion of each exposure field PIa to PIf corresponding to the overlap region.

[0140] Here, the control system CTR maintains a constant positional relationship (distance) between the surface of the photosensitive substrate 22 and the image planes of the projection optical systems 19a to 19f during the first to nth scan exposures (maintaining the heights of the image planes of the projection optical systems 19a to 19f at substantially the same height). However, this is not limited to this, and in order to control the exposure amount for each scan exposure, the positional relationship (distance) between the surface of the photosensitive substrate 22' and the image planes of the projection optical systems 19a to 19f may be adjusted in at least one of the first to nth scan exposures so that the surface of the photosensitive substrate 22' and the image planes of the projection optical systems 19a to 19f come closer together. In other words, the distance between the surface of the photosensitive substrate 22' and the image plane of the projection optical systems 19a to 19f in at least one scan exposure (the kth exposure (where k is a natural number satisfying 1 ≤ k ≤ n)) from the first to the nth scan exposure may be different from the distance between the surface of the photosensitive substrate 22' and the image plane of the projection optical systems 19a to 19f in the other scan exposures (the mth exposure (where m is a natural number satisfying 1 ≤ m ≤ n, and m ≠ k)). For example, the distance between the surface of the photosensitive substrate 22' and the image plane of the projection optical systems 19a to 19f in any scan exposure other than the nth scan exposure can be made greater than the distance between the surface of the photosensitive substrate 22' and the image plane of the projection optical systems 19a to 19f in the nth scan exposure. In this case, the control system CTR may drive the substrate stage 27 to adjust the Z position of the photosensitive substrate 22' (the position in the optical axis direction of the projection optical systems 19a to 19f), or it may adjust the Z position of some of the optical elements of the projection optical systems 19a to 19f (for example, the lowest optical element (terminal element) of the projection optical systems 19a to 19f), or it may adjust both.

[0141] As described above, after repeating scan exposure on the pattern formation region S_1 n times (8 times), the substrate stage 27 is moved (stepped) to the exposure start position of the next exposure target pattern formation region S_2, as shown in Figure 24(a).

[0142] Subsequently, n scan exposures are performed on the pattern formation regions S_2, S_3, S_4, S_5, and S_6, and when these are completed, the substrate stage 27 moves to the substrate replacement position. In this fourth embodiment, the pattern formation region S_6 is also repeatedly subjected to negative scan exposure → positive scan exposure →… in the same order as the other pattern formation regions S_1 to S_5. Therefore, the nth (eighth) scan exposure for the pattern formation region S_6 is a positive scan exposure (see Figure 24(b)). Also, as shown in Figure 24(b), in this fourth embodiment, the substrate replacement position is located on the +X side of the projection optical systems 19a to 19f (exposure fields PIa to PIf). Therefore, the substrate stage 27 can be smoothly moved to the substrate replacement position after the last scan exposure on the photosensitive substrate 22' is completed. This optimizes the throughput of the exposure apparatus 100.

[0143] In this fourth embodiment, since the number of scan exposures n for the last pattern formation region S_6 is even, the first scan exposure of the pattern formation region S_6 is set to a negative scan exposure so that the nth scan exposure becomes a positive scan exposure. Therefore, if the number of scan exposures n for the last pattern formation region S_6 is odd, the first scan exposure of the pattern formation region S_6 can be set to a positive scan exposure so that the nth scan exposure becomes a positive scan exposure. In this fourth embodiment, the case in which the first scan exposure of pattern formation regions S_1 to S_5 other than pattern formation region S_6 is set to a negative scan exposure has been described, but this is not limited to this, and may be changed as appropriate from the viewpoint of the number of scan exposures, throughput, etc.

[0144] This completes the process shown in Figure 5. After that, a new photosensitive substrate 22' is loaded onto the substrate stage 27 at the substrate replacement position.

[0145] The method for adjusting the exposure parameters used during scan exposure in the exposure apparatus 100 of this fourth embodiment is the same as in the first embodiment, so its explanation will be omitted.

[0146] As described in detail above, according to this fourth embodiment, a first region (e.g., exposure region SIa) on the photosensitive substrate 22' is scanned and exposed n times, and a second region (e.g., exposure region SIb) including an overlapping region (e.g., Oa) and a non-overlapping region (e.g., NOb) that overlap with the first region (e.g., exposure region SIa) is scanned and exposed n times. The cumulative exposure amount of the non-overlapping region from the first to the (n-1)th scan exposure is less than the target cumulative exposure amount, and the cumulative exposure amount of the non-overlapping region from the first to the nth scan exposure is equal to or greater than the target cumulative exposure amount. In this way, by repeatedly scanning and exposing the overlapping region and the non-overlapping region, unevenness in the effective photosensitivity between the overlapping region and the non-overlapping region can be suppressed, and a decrease in the uniformity (stability) of the exposure linewidth (CD) can be suppressed. In particular, when the film thickness of the chemically amplified resist 222' is thick (for example, 10 μm or more), or when the target integrated exposure dose is large and the difference in dose (exposure energy per unit area) between the exposed area and the unexposed area is large (for example, when the target integrated exposure dose is 1000 mJ / cm²), 2 In the above cases, the decrease in the uniformity (stability) of the exposure linewidth (CD) can be effectively suppressed.

[0147] Furthermore, in this fourth embodiment, the target integrated exposure amount (second threshold) of the overlapping region is set to be greater than or equal to the target integrated exposure amount (first threshold) of the non-overlapping region. For example, by making the target integrated exposure amount (second threshold) of the overlapping region greater than the target integrated exposure amount (first threshold) of the non-overlapping region, it is possible to suppress unevenness in the effective exposure amount between the overlapping region and the non-overlapping region when the effective exposure amount is low in the overlapping region.

[0148] Furthermore, in this fourth embodiment, when moving the photosensitive substrate 22' to the substrate exchange position in the +X direction after performing the nth scan exposure on the last pattern formation region (S_6) on the photosensitive substrate 22, if n is even, the first scan exposure is a negative scan exposure (exposure while moving the substrate stage 27 in the -X direction). If n is odd, the first scan exposure is a positive scan exposure (exposure while moving the substrate stage 27 in the +X direction). As a result, the nth scan exposure is a positive scan exposure, allowing the substrate stage 27 to move smoothly to the substrate exchange position after the completion of the nth scan exposure. This optimizes the throughput of the exposure apparatus 100.

[0149] Furthermore, in this fourth embodiment, as shown in Figure 20(a), for example, focusing on the exposure field PIc (first exposure field) and exposure field PIb (second exposure field), the exposure fields PIc and PIb are spaced apart from each other in the X-axis direction (first direction), and the positions of the centers of each exposure field PIc and PIb are different in the Y-axis direction (second direction) which is perpendicular to the X-axis direction. Also, the ends (trapezoidal legs) of the exposure field PIc and the ends (trapezoidal legs) of the exposure field PIb are located on a straight line parallel to the X-axis direction. In this fourth embodiment, by moving the photosensitive substrate 22 in the X-axis direction relative to the exposure fields PIc and PIb, light is irradiated onto a predetermined region extending in the X-axis direction on the photosensitive substrate 22 (overlapping regions Oc, Ob, Oa and non-overlapping regions NOc, NOb in Figure 4(b)) by the exposure fields PIc and PIb (first light irradiation process). Furthermore, after the first light irradiation process, the photosensitive substrate 22 is moved in a direction parallel to the X-axis direction relative to the exposure fields PIc and PIb, thereby irradiating the predetermined area with light again using the exposure fields PIc and PIb (second light irradiation process). In this way, in this fourth embodiment, the predetermined area on the photosensitive substrate 22 can be scanned and exposed multiple times. By repeatedly scanning and exposing the predetermined area in this manner, unevenness in the effective photosensitivity in the overlapping areas Oc, Ob, Oa and the non-overlapping areas NOc, NOb can be suppressed, and a decrease in the uniformity (stability) of the exposure linewidth (CD) can be suppressed.

[0150] Furthermore, in this fourth embodiment, in the first light irradiation process, light is irradiated onto the photosensitive substrate 22 through a mask 15 having a light-shielding pattern, and in the second light irradiation process, light is also irradiated onto the photosensitive substrate 22 through the mask 15. This suppresses unevenness in the effective light exposure when exposing and transferring a pattern to the photosensitive material 222 of the photosensitive substrate 22, and makes it possible to achieve uniformity in the film thickness of the photosensitive material 222.

[0151] Furthermore, in this fourth embodiment, in the second light irradiation process, the photosensitive substrate 22 is moved in the opposite direction to the movement direction in the first light irradiation process. As a result, the first and second light irradiation processes can be performed by the reciprocating movement of the photosensitive substrate 22, thereby improving throughput.

[0152] In the fourth embodiment described above, the case where the number of scan exposures n for one pattern formation region is 8 was explained, but it is not limited to this. n can be 2 or more. However, from the viewpoint of effectively suppressing unevenness in effective light sensitivity, it is preferable that n is 4 or more.

[0153] 《Fifth Embodiment》 The fifth embodiment will now be described. The exposure apparatus used in this fifth embodiment is the same as that of the second embodiment (same as the exposure apparatus 200 in Figure 5).

[0154] In this fifth embodiment, as shown in Figure 25(a), pattern formation regions S_1 to S_6 are provided on a photosensitive substrate 22' on which a chemically amplified resist 222' is provided. One large region S_12 is formed by pattern formation region S_1 and pattern formation region S_2, and one large region S_56 is formed by pattern formation region S_5 and pattern formation region S_6. That is, the photosensitive substrate 22' moves relative to the exposure field PI of the projection optical system 19 shown in Figure 25(a), and pattern formation region S_1 and pattern formation region S_2 are exposed, forming a pattern over the entire large region S_12. Also, the photosensitive substrate 22' moves relative to the exposure field PI of the projection optical system 19, and pattern formation region S_5 and pattern formation region S_6 are exposed, forming a pattern over the entire large region S_56.

[0155] Figure 25(b) shows the exposure regions (scanning exposure fields) SIa and SIb formed on the photosensitive substrate 22' when the pattern formation region S_1 and the pattern formation region S_2 are sequentially exposed using the exposure field PI shown in Figure 25(a).

[0156] The +Y direction end of exposure region SIa and the -Y direction end of exposure region SIb overlap. In this fifth embodiment, the overlapping region of exposure regions SIa and SIb is called the overlapping region (overlapping region) Oa, and the regions other than the overlapping region Oa are called the non-overlapping regions (non-overlapping regions) NOa and NOb.

[0157] (Regarding the exposure process) In the exposure apparatus 200 of this fifth embodiment, in order to suppress the difference between the effective photosensitive amount of the non-overlapping area and the effective photosensitive amount of the overlapping area, for example, when exposing a large area S_12, the process of scanning and exposing a pattern onto the pattern formation area S_1 (exposure area SIa) while moving the photosensitive substrate 22' on which the chemically amplified resist 222' is provided in a predetermined direction along the X direction (light irradiation process), and the process of scanning and exposing a pattern onto the pattern formation area S_2 (exposure area SIb) while moving the photosensitive substrate 22' in the opposite direction to the predetermined direction (light irradiation process) is repeated multiple times. The same applies to the large area S_56.

[0158] The procedure for exposure processing of the large area S_12 will be described below based on Figures 26(a) to 28(b).

[0159] Figure 26(a) shows the state in which the photosensitive substrate 22' (substrate stage 27) is positioned at the exposure start position of the large region S_12. This exposure start position of the large region S_12 is assumed to be the position in which the exposure field PI of the projection optical system 19 is located near the +X edge of the pattern formation region S_1.

[0160] From the state shown in Figure 26(a), as shown in Figure 26(b), the substrate stage 27 (photosensitive substrate 22') moves in the +X direction, and the mask stage 16 also moves in the +X direction, scanning the pattern of the mask 15 onto the pattern formation region S_1 (i.e., positive scan exposure).

[0161] Next, as shown in Figure 27(a), the substrate stage 27 (photosensitive substrate 22') moves in the -Y direction (steps). Then, as shown in Figure 27(b), the substrate stage 27 (photosensitive substrate 22') moves in the -X direction, and the mask stage 16 also moves in the -X direction, scanning the pattern of the mask 15 onto the pattern formation region S_2 (i.e., negative scan exposure).

[0162] Next, as shown in Figure 28(a), the substrate stage 27 (photosensitive substrate 22') moves in the +X direction, and the mask stage 16 also moves in the +X direction, scanning and exposing the pattern of the mask 15 to the pattern formation region S_2 (positive scan exposure). Then, as shown in Figure 28(b), the substrate stage 27 (photosensitive substrate 22') moves in the +Y direction (stepping). Then, the substrate stage 27 (photosensitive substrate 22') moves in the -X direction, and the mask stage 16 also moves in the -X direction, scanning and exposing the pattern of the mask 15 to the pattern formation region S_1 (i.e., negative scan exposure). After that, the process of positive scan exposure to the pattern formation region S_1, negative scan exposure to the pattern formation region S_2, positive scan exposure to the pattern formation region S_2, and negative scan exposure to the pattern formation region S_1 is repeated in that order, and the exposure process to the large region S_12 is terminated when each pattern formation region has been scanned and exposed a predetermined number of times (n times).

[0163] The exposure amount for each scan exposure is the same as in the first embodiment. That is, the target cumulative exposure amount for non-overlapping regions NOa and NOb from n scan exposures is set to the same value as the first threshold in the first embodiment. On the other hand, the target cumulative exposure amount for overlapping region Oa from n scan exposures is also set to a second threshold that is greater than or equal to the first threshold, similar to the first embodiment. For the non-overlapping regions, the cumulative exposure amount from the first to the (n-1)th scan exposure is set to be less than the target cumulative exposure amount (first threshold), and the cumulative exposure amount from the first to the nth scan exposure is set to be greater than or equal to the target cumulative exposure amount (first threshold). Similarly, for overlapping regions Oa to Oe, the cumulative exposure amount from the first to the (n-1)th scan exposure is set to be less than the target cumulative exposure amount (second threshold), and the cumulative exposure amount from the first to the nth scan exposure is set to be greater than or equal to the target cumulative exposure amount (second threshold). Furthermore, other processes, such as the method for controlling the exposure amount, are the same as in the first embodiment.

[0164] The same applies to the exposure process for the large area S_56. In the scan exposure of the large area S_56, if the substrate replacement position is on the +X side of the projection optical system 19, the direction of the first scan exposure is determined so that the nth scan exposure of the pattern formation area S_6 is positive scan exposure. This allows for a smooth movement to the substrate replacement position after the final scan exposure of the photosensitive substrate 22' is completed.

[0165] Furthermore, for pattern formation regions S_3 and S_4, where scan exposure is performed between large regions S_12 and S_56, the pattern will be formed with only one scan exposure. Therefore, the exposure amount is determined so that it exceeds the target integrated exposure amount (first threshold) with only one scan exposure.

[0166] As explained above, according to this fifth embodiment, since overlapping and non-overlapping regions are repeatedly scanned and exposed, unevenness in the effective light-sensitive area in the overlapping region can be suppressed, and a decrease in the uniformity (stability) of the exposure linewidth (CD) can be suppressed. Furthermore, the fifth embodiment also provides other effects similar to those of the fourth embodiment.

[0167] 《Sixth Embodiment》 The sixth embodiment will now be described. In the fifth embodiment described above, as shown in Figure 25(a), a large area S_12 is formed by pattern formation area S_1 and pattern formation area S_2, and a large area S_56 is formed by pattern formation area S_5 and pattern formation area S_6, among the pattern formation areas S_1 to S_6 provided on the photosensitive substrate 22' on which the chemically amplified resist 222' is provided. In contrast, in this sixth embodiment, as shown in Figure 29(a), a large area S_16 is formed by two pattern formation areas S_1 and S_6 arranged in the scan direction (X-axis direction), a large area S_25 is formed by two pattern formation areas S_2 and S_5, and a large area S_34 is formed by two pattern formation areas S_3 and S_4. In other words, as the photosensitive substrate 22 moves relative to the exposure field PI of the projection optical system 19 shown in Figure 29(a), the pattern formation regions S_1 and S_6 are exposed, and a pattern is formed over the entire large region S_16. The same applies to the large regions S_25 and S_34.

[0168] Figure 29(b) shows the exposure regions (scanning exposure fields) SIa and SIb formed on the photosensitive substrate 22' when the pattern formation region S_1 and the pattern formation region S_6 are sequentially exposed using the exposure field PI shown in Figure 29(a).

[0169] The -X-direction end of exposure region SIa and the +X-direction end of exposure region SIb overlap. In this sixth embodiment, the overlapping region of exposure regions SIa and SIb is called the overlapping region (overlapping region) Oa', and the regions other than the overlapping region Oa' are called the non-overlapping regions (non-overlapping regions) NOa' and NOb'.

[0170] (Regarding the exposure process) In the exposure apparatus of this sixth embodiment, in order to suppress the difference between the effective light sensitivity of the non-overlapping region and the effective light sensitivity of the overlapping region, for example, when exposing a large region S_16, a process (light irradiation process) is performed in which the pattern is scanned and exposed multiple times (for example, 8 times) in the pattern formation region S_1 (exposure region SIa) while moving the photosensitive substrate 22' in the +X direction or -X direction, and then a process (light irradiation process) is performed in which the pattern is scanned and exposed multiple times (for example, 8 times) in the pattern formation region S_6 (exposure region SIb) while moving the photosensitive substrate 22' in the +X direction or -X direction. When exposing a large region S_16, the pattern formation region S_6 and then S_1 may be exposed in that order.

[0171] Furthermore, when exposing large area S_25 after large area S_16, the photosensitive substrate 22' is moved in the +X direction or -X direction while performing a scan exposure process (light irradiation process) on the pattern formation area S_2 (exposure area SIa) multiple times (for example, 8 times). After that, the photosensitive substrate 22' is moved in the +X direction or -X direction while performing a scan exposure process (light irradiation process) on the pattern formation area S_5 (exposure area SIb) multiple times (for example, 8 times). Note that when exposing large area S_25, the pattern formation areas S_5 and S_2 may be exposed in that order.

[0172] Furthermore, when exposing large area S_34 after large area S_25, a process (light irradiation process) is performed in which the pattern is scanned and exposed multiple times (for example, 8 times) in the pattern formation area S_3 (exposure area SIa) while moving the photosensitive substrate 22' in the +X direction or -X direction. After that, a process (light irradiation process) is performed in which the pattern is scanned and exposed multiple times (for example, 8 times) in the pattern formation area S_4 (exposure area SIb) while moving the photosensitive substrate 22' in the +X direction or -X direction. Note that when exposing large area S_34, the pattern formation areas S_4 and S_3 may be exposed in that order.

[0173] The exposure amount for each scan exposure is the same as in the first embodiment. That is, the target cumulative exposure amount for the non-overlapping regions NOa' and NOb' from n scan exposures (for example, n is 8) is set to the same value as the first threshold. On the other hand, the target cumulative exposure amount for the overlapping region Oa' from n scan exposures is also set to a second threshold that is greater than or equal to the first threshold. For the non-overlapping regions, the cumulative exposure amount from the first to the (n-1)th scan exposure is set to be less than the target cumulative exposure amount (first threshold), and the cumulative exposure amount from the first to the nth scan exposure is set to be greater than or equal to the target cumulative exposure amount (first threshold). Similarly, for the overlapping region Oa', the cumulative exposure amount from the first to the (n-1)th scan exposure is set to be less than the target cumulative exposure amount (second threshold), and the cumulative exposure amount from the first to the nth scan exposure is set to be greater than or equal to the target cumulative exposure amount (second threshold). Furthermore, other processes, such as the method for controlling the exposure amount, are the same as in the first embodiment.

[0174] Furthermore, in the scan exposure of the large area S_34, if the substrate replacement position is on the +X side of the projection optical system 19, the direction of the first scan exposure is determined so that the nth scan exposure of the pattern formation area S_4 (or S_3) to be exposed later becomes a positive scan exposure. In this way, after the last scan exposure of the photosensitive substrate 22' is completed, the movement to the substrate replacement position can be performed smoothly.

[0175] As described above, according to this sixth embodiment, it is possible to suppress unevenness in the effective light-sensitive amount in the overlap region Oa' and suppress a decrease in the uniformity (stability) of the exposure linewidth (CD).

[0176] In the sixth embodiment described above, a case was described in which a large area is formed by two pattern-forming regions aligned in the scanning direction. However, the invention is not limited to this, and a large area may be formed by three or more pattern-forming regions aligned in the scanning direction.

[0177] (Modification 4) In addition, the large regions S_16, S_25, and S_34 of the photosensitive substrate 22' on which the chemically amplified resist 222' described in the sixth embodiment is provided may be exposed using the exposure apparatus 100 described in the first embodiment. That is, each pattern formation region S_1 to S_6 that forms the large regions S_16, S_25, and S_34 may be exposed using a plurality (for example, six) of projection optical systems 19a to 19f (exposure fields PIa to PIf). In this case, in order to suppress the difference between the effective photosensitivity of the non-overlapping regions NOa' and NOb' (see Figure 29(b)) of the large region S_16 and the effective photosensitivity of the overlapping region Oa' (see Figure 29(b)), when exposing the large region S_16, a process (light irradiation process) is performed in which the pattern is scanned and exposed multiple times (for example, 8 times) on the pattern formation region S_1 while moving the photosensitive substrate 22' in the +X direction or -X direction. After that, a process (light irradiation process) is performed in which the pattern is scanned and exposed multiple times (for example, 8 times) on the pattern formation region S_6 while moving the photosensitive substrate 22' in the +X direction or -X direction. The same scan exposure is also performed on the large regions S_25 and S_34 as on the large region S_16.

[0178] According to this modified example 4, it is possible to suppress unevenness in the effective light-sensitive area in the overlapping area Oa' and suppress a decrease in the uniformity (stability) of the exposure linewidth (CD). Furthermore, in the overlapping areas Oa to Oe and the non-overlapping areas NOa to NOf located within each pattern-forming area S_1 to S_6 shown in Figure 20(b), it is possible to suppress unevenness in the effective light-sensitive area and suppress a decrease in the uniformity (stability) of the exposure linewidth (CD), similar to the first embodiment.

[0179] (Modification 5) In addition, the large areas S_12 and S_56 of the photosensitive substrate 22' on which the chemically amplified resist 222' described in the fifth embodiment is provided may be exposed using the exposure apparatus 100 described in the first embodiment.

[0180] That is, as shown in Figure 30(a), each pattern formation region S_1 to S_6 that forms the large regions S_12 and S_56 may be exposed using a plurality (for example, six) projection optical systems 19a to 19f (exposure fields PIa to PIf). In this case as well, similar to the fifth embodiment, in order to suppress the difference between the effective photosensitivity of the non-overlapping regions NOa and NOb (see Figure 25(b)) of the large region S_12 and the effective photosensitivity of the overlapping region Oa (see Figure 25(b)), when exposing the large region S_12, a process (light irradiation process) is performed in which the pattern is scanned and exposed multiple times (for example, eight times) on the pattern formation region S_1 while moving the photosensitive substrate 22 in the +X direction or -X direction, and thereafter, a process (light irradiation process) is performed in which the pattern is scanned and exposed multiple times (for example, eight times) on the pattern formation region S_2 while moving the photosensitive substrate 22 in the +X direction or -X direction. Furthermore, scan exposure is performed on the large area S_56 in the same way as on the large area S_12.

[0181] According to this modified example 5, unevenness in the effective light-sensitive area in the overlap region Oa can be suppressed, and a decrease in the uniformity (stability) of the exposure linewidth (CD) can be suppressed. Furthermore, in the overlap regions Oa to Oe and the non-overlap regions NOa to NOf located within each pattern formation region S_1 to S_6 shown in Figure 20(b), unevenness in the effective light-sensitive area can be suppressed, and a decrease in the uniformity (stability) of the exposure linewidth (CD) can be suppressed, similar to the fourth embodiment.

[0182] (Modification 6) In addition, a large region S_1256 including multiple (four in Figure 30(b)) pattern formation regions S_1, S_2, S_5, S_6 arranged on the top, bottom, left, and right sides of a photosensitive substrate 22' on which a chemically amplified resist 222' is provided, as shown in Figure 30(b), may be exposed using the exposure apparatus 100 described in the first (third) embodiment or the exposure apparatus 200 described in the second (fourth) embodiment. In this case as well, unevenness in the effective photosensitivity in the overlap region of each pattern formation region can be suppressed, and a decrease in the uniformity (stability) of the exposure linewidth (CD) can be suppressed. Furthermore, when using the exposure apparatus 100, in the overlap region Oa to Oe and the non-overlap region NOa to NOf shown in Figure 20(b), unevenness in the effective photosensitivity can be suppressed, and a decrease in the uniformity (stability) of the exposure linewidth (CD) can be suppressed, similar to the fourth embodiment.

[0183] In the above-described embodiments and modifications, the case where the projection optical system is a 1:1 magnification system was explained, but it may also be a magnification system or a reduction system.

[0184] In the above-described embodiments and modifications of the first to sixth embodiments, the case in which the photosensitive substrate 22 (i.e., the substrate stage 27) is moved when the optical system (illumination optical system or projection optical system) and the photosensitive substrate 22 are moved relative to each other has been described, but the invention is not limited to this. For example, if the optical system can be moved, the optical system may be moved instead.

[0185] In the first to sixth embodiments and their modifications described above, a light-transmitting mask was used, which had a predetermined light-shielding pattern (or phase pattern / attenuation pattern) formed on a light-transmitting substrate. However, instead of this mask, an electronic mask (also called a variable-shape mask, active mask, or image generator, and including, for example, a DMD (Digital Micro-mirror Device), which is a type of non-emitting image display element (spatial light modulator)) may be used to form a transmission pattern, a reflection pattern, or an emission pattern based on the electronic data of the pattern to be exposed, as disclosed in, for example, U.S. Patent No. 6,778,257. When such a variable-shape mask is used, the stage on which the wafer or glass plate is mounted is scanned relative to the variable-shape mask.

[0186] Furthermore, the applications of the exposure equipment are not limited to liquid crystal exposure equipment that transfers liquid crystal display element patterns onto rectangular glass plates, but can be broadly applied to exposure equipment for manufacturing organic EL (Electro-Luminescence) panels, semiconductors, thin-film magnetic heads, micromachines, and DNA chips. In addition to microdevices such as semiconductor elements, it can also be applied to exposure equipment that transfers circuit patterns onto glass substrates or silicon wafers in order to manufacture masks or reticles used in photolithography equipment, EUV exposure equipment, X-ray exposure equipment, and electron beam exposure equipment.

[0187] Furthermore, the object to be exposed is not limited to a glass plate; it may also be a wafer, ceramic substrate, film material, or mask blank. Also, if the object to be exposed is a substrate for a flat panel display, the thickness of the substrate is not particularly limited, and it may include film-like materials (flexible sheet-like materials). The exposure apparatus of this embodiment is particularly effective when the object to be exposed is a substrate with a side length or diagonal length of 500 mm or more.

[0188] Electronic devices such as liquid crystal display elements (or semiconductor elements) are manufactured through the following steps: designing the function and performance of the device; manufacturing a mask (or reticle) based on this design step; manufacturing a glass substrate (or wafer); a lithography step in which the pattern of the mask (reticle) is transferred to the glass substrate using the exposure apparatus and exposure method of each embodiment described above; a development step in which the exposed glass substrate is developed; an etching step in which exposed members other than those with remaining resist are removed by etching; a resist removal step in which the resist that is no longer needed after etching is removed; a device assembly step; an inspection step; and so on. In this case, in the lithography step, the exposure method described above is performed using the exposure apparatus of the embodiment described above, and a device pattern is formed on the glass substrate, so that highly integrated devices can be manufactured with high productivity.

[0189] The embodiments described above are preferred examples of the present invention. However, the invention is not limited thereto, and various modifications are possible without departing from the spirit of the invention.

[0190] 11a-11f Fly-eye lens 15 Mask 16 Mask stage 19a-19f Projection optical system 22 Photosensitive substrate 22' Photosensitive substrate 27 Substrate stage 100 Exposure apparatus 222 Photosensitive material 222' Chemically amplified resist CTR Control system ILa-ILf Illumination optical system PIa-PIf Exposure field SIa-SIf Exposure area Oa-Oe Overlap area NOa-NOf Non-overlap area

Claims

1. An exposure method comprising: a first light irradiation process, in which a photosensitive substrate is moved in the first direction with respect to a first exposure field and a second exposure field, which are spaced apart from each other in a first direction and have different center positions in a second direction perpendicular to the first direction, thereby irradiating a first region extending in the first direction on the photosensitive substrate with light using the first exposure field and the second exposure field; and a second light irradiation process, after the first light irradiation process, in which the photosensitive substrate is moved in a direction parallel to the first direction with respect to the first exposure field and the second exposure field, thereby irradiating the first region with light using the first exposure field and the second exposure field, wherein the edges of the first exposure field and the edges of the second exposure field are located on a straight line parallel to the first direction.

2. The exposure method according to claim 1, wherein in the first light irradiation process, light is irradiated onto the photosensitive substrate through a mask having a light-shielding pattern, and in the second light irradiation process, light is irradiated onto the photosensitive substrate through the mask.

3. The exposure method according to claim 1 or 2, wherein in the second light irradiation process, the photosensitive substrate is moved in a direction opposite to the first direction to irradiate the first region with light.

4. The exposure method according to any one of claims 1 to 3, wherein in the first light irradiation process and the second light irradiation process, the first exposure field is formed by light through a first projection optical system, the second exposure field is formed by light through a second projection optical system, the image planes of the first projection optical system are substantially the same height, and the image planes of the second projection optical system are substantially the same height.

5. An exposure method comprising: performing a light irradiation process n times (n is a natural number of 2 or more) to irradiate a first region on a photosensitive substrate with light; and performing a light irradiation process n times (n is a natural number of 2 or more) to irradiate a second region on the photosensitive substrate, which is different from the first region and includes an overlapping region that overlaps with the first region and a non-overlapping region other than the overlapping region, wherein the cumulative exposure amount of the non-overlapping region from the first to the (n-1)th light irradiation process is less than the target cumulative exposure amount, and the cumulative exposure amount of the non-overlapping region from the first to the nth light irradiation process is equal to or greater than the target cumulative exposure amount.

6. The exposure method according to claim 5, wherein the target integrated exposure amount for the overlapping region is set to be greater than the target integrated exposure amount for the non-overlapping region.

7. The exposure method according to claim 6, wherein the cumulative exposure amount of the overlapping region from the first to the (n-1)th light irradiation treatment is less than the target cumulative exposure amount of the overlapping region, and the cumulative exposure amount of the overlapping region from the first to the nth light irradiation treatment is equal to or greater than the target cumulative exposure amount of the overlapping region.

8. The exposure method according to any one of claims 5 to 7, wherein each of the first to the nth light irradiation treatments comprises irradiating the photosensitive substrate with light through a mask having a light-shielding pattern.

9. The exposure method according to any one of claims 5 to 8, wherein the exposure amount of the non-overlapping region in the kth (where k is a natural number satisfying 1 ≤ k < n) light irradiation treatment is smaller than the exposure amount of the non-overlapping region in the nth light irradiation treatment.

10. The exposure method according to any one of claims 5 to 9, wherein in at least one of the first to the nth light irradiation processes, the positional relationship between the image plane and the surface is adjusted so that the surface of the photosensitive substrate irradiated with light through the optical system approaches the image plane of the optical system.

11. The exposure method according to any one of claims 5 to 10, wherein the distance between the surface of the photosensitive substrate irradiated with light via the optical system and the image plane of the optical system during the kth (k is a natural number satisfying 1 ≤ k ≤ n) light irradiation process is different from the distance between the surface and the image plane during the mth (m is a natural number satisfying 1 ≤ m ≤ n and m ≠ k) light irradiation process.

12. The exposure method according to any one of claims 5 to 11, wherein n is 4 or greater.

13. The exposure method according to any one of claims 5 to 12, wherein the photosensitive substrate is exposed with light containing the same peak wavelength in the first to the nth light irradiation treatments.

14. The exposure method according to any one of claims 5 to 13, wherein the first region and the second region are arranged in a direction parallel to the first direction, and each of the first to the nth light irradiation processes includes irradiating the first region with light through the projection optical system while moving the photosensitive substrate with respect to the projection optical system in the first direction or in a second direction opposite to the first direction, and then irradiating the second region with light through the projection optical system while moving the photosensitive substrate with respect to the projection optical system in the first direction or in a second direction.

15. The exposure method according to claim 14, comprising, after performing the nth light irradiation treatment, transporting the photosensitive substrate in the first direction, wherein the second region is the region in which the light irradiation treatment is performed last among a plurality of regions of the photosensitive substrate, and in the nth light irradiation treatment, the photosensitive substrate is moved in the first direction with respect to the projection optical system while light is irradiated onto the second region via the projection optical system.

16. The exposure method according to any one of claims 5 to 13, wherein the first region and the second region are arranged in a direction intersecting the first direction, and each of the first to the nth light irradiation processes includes irradiating the first region with light through the first projection optical system and irradiating the second region with light through the second projection optical system, while moving the photosensitive substrate in the first direction or in a second direction opposite to the first direction with respect to the first projection optical system and the second projection optical system.

17. The exposure method according to claim 16, further comprising, after performing the nth light irradiation treatment, transporting the photosensitive substrate in the first direction, wherein if n is even, in the first light irradiation treatment, the photosensitive substrate is moved in the second direction with respect to the first projection optical system and the second projection optical system, while irradiating the first region with light through the first projection optical system and irradiating the second region with light through the second projection optical system; and if n is odd, in the first light irradiation treatment, the photosensitive substrate is moved in the first direction with respect to the first projection optical system and the second projection optical system, while irradiating the first region with light through the first projection optical system and irradiating the second region with light through the second projection optical system.

18. A device manufacturing method comprising developing a photosensitive substrate treated by the exposure method described in any one of claims 5 to 17.

19. An exposure apparatus comprising: a substrate stage for holding a photosensitive substrate; an optical system for irradiating the photosensitive substrate with light; and a control device, wherein the control device controls at least one of the substrate stage and the optical system to perform a light irradiation process n times (n is a natural number of 2 or more) for irradiating a first region on the photosensitive substrate with light, and a light irradiation process n times for irradiating a second region on the photosensitive substrate, which is different from the first region and includes an overlapping region that overlaps with the first region and a non-overlapping region other than the overlapping region; and the control device controls at least one of the substrate stage and the optical system to such that the cumulative exposure amount of the non-overlapping region from the first to the (n-1)th light irradiation process is less than a target cumulative exposure amount, and the cumulative exposure amount of the non-overlapping region from the first to the nth light irradiation process is equal to or greater than the target cumulative exposure amount.

20. The exposure apparatus according to claim 19, wherein the control device sets the target integrated exposure amount for the overlapping region to be greater than the target integrated exposure amount for the non-overlapping region.

21. The exposure apparatus according to claim 20, wherein the optical system includes a fly-eye lens whose incident surface into which light is incident is located in a position conjugate to the photosensitive substrate, and a light-shielding member located on the incident surface side of the fly-eye lens and shielding a portion of the fly-eye lens corresponding to the non-overlapping region, and the control device controls the light-shielding member to adjust the amount of light shielding in the portion by the light-shielding member, thereby setting the target integrated exposure amount of the overlapping region to be greater than the target integrated exposure amount of the non-overlapping region.

22. The exposure apparatus according to claim 20, wherein the optical system includes a light-reducing member for reducing the amount of light irradiated onto the non-overlapping region, and the control device controls the light-reducing member to adjust the amount of light reduction by the light-reducing member, thereby setting the target integrated exposure amount for the overlapping region to be greater than the target integrated exposure amount for the non-overlapping region.

23. The exposure apparatus according to any one of claims 19 to 22, wherein the control device controls at least one of the substrate stage and the optical system such that the cumulative exposure amount of the overlapping region from the first to the (n-1)th light irradiation process is less than the target cumulative exposure amount of the overlapping region, and the cumulative exposure amount of the overlapping region from the first to the nth light irradiation process is equal to or greater than the target cumulative exposure amount of the overlapping region.

24. The exposure apparatus according to any one of claims 19 to 23, wherein the control device controls the cumulative exposure amount of the non-overlapping region by controlling at least one of the moving speed of the substrate stage and the intensity of the light irradiated onto the photosensitive substrate.

25. The exposure apparatus according to any one of claims 19 to 24, wherein the control device controls the cumulative exposure amount of the overlapping region by controlling at least one of the moving speed of the substrate stage, the intensity of the light irradiated onto the photosensitive substrate, and the size of the overlapping region.

26. An exposure apparatus according to any one of claims 19 to 25, further comprising a mask stage for holding a mask having a light-shielding pattern, wherein the control device controls at least one of the substrate stage, the optical system, and the mask stage so that the light is irradiated onto the photosensitive substrate through the mask during the first to the nth light irradiation processes.

27. The exposure apparatus according to any one of claims 19 to 26, wherein the control device controls at least one of the substrate stage and the optical system such that the exposure amount of the non-overlapping region in the kth (where k is a natural number satisfying 1 ≤ k < n) light irradiation process is smaller than the exposure amount of the non-overlapping region in the nth light irradiation process.

28. The exposure apparatus according to any one of claims 19 to 27, wherein the control device controls the substrate stage so that the image plane on which the light is incident approaches the surface of the photosensitive substrate in each of the first to nth light irradiation processes.

29. The exposure apparatus according to any one of claims 19 to 28, wherein in the kth (where k is a natural number satisfying 1 ≤ k < n) light irradiation process, the distance between the image plane on which the light is incident and the surface of the photosensitive substrate is greater than the distance between the image plane and the surface of the photosensitive substrate in the nth light irradiation process.

30. An exposure apparatus according to any one of claims 19 to 29, wherein n is 4 or greater.

31. The exposure apparatus according to any one of claims 19 to 30, wherein the control device controls the optical system to expose the photosensitive substrate with light containing the same wavelength in the first to the nth light irradiation process.

32. The exposure apparatus according to any one of claims 19 to 31, wherein the optical system includes a projection optical system for irradiating the photosensitive substrate with light, the first region and the second region are arranged in a direction parallel to the first direction, and the control device includes, in each of the first to the nth light irradiation processes, irradiating the first region with light through the projection optical system while moving the photosensitive substrate with respect to the projection optical system in the first direction or a second direction opposite to the first direction, and then irradiating the second region with light through the projection optical system while moving the photosensitive substrate with respect to the projection optical system in the first direction or a second direction.

33. The exposure apparatus according to claim 32, further comprising an unloading device for unloading the photosensitive substrate, wherein the control device controls the unloading device to unload the photosensitive substrate in a first direction after the nth light irradiation treatment, and the control device irradiates the second region with light via the projection optical system while moving the photosensitive substrate in a first direction relative to the projection optical system during the nth light irradiation treatment.

34. An exposure apparatus according to any one of claims 19 to 27, further comprising a first projection optical system and a second projection optical system, wherein the first region and the second region are arranged in a direction intersecting a first direction, and the control device includes, in each of the first to the nth light irradiation processes, moving the photosensitive substrate in a first direction or a second direction opposite to the first direction with respect to the first projection optical system and the second projection optical system, while irradiating the first region with light through the first projection optical system and irradiating the second region with light through the second projection optical system.

35. The exposure apparatus according to claim 34, further comprising an unloading device for unloading the photosensitive substrate, wherein the control device includes unloading the photosensitive substrate in a first direction after the nth light irradiation treatment, and the control device, when n is even, moves the photosensitive substrate in a second direction with respect to the first projection optical system and the second projection optical system, while irradiating the first region with light through the first projection optical system and the second region with light through the second projection optical system, and when n is odd, moves the photosensitive substrate in a first direction with respect to the first projection optical system and the second projection optical system, while irradiating the first region with light through the first projection optical system and the second region with light through the second projection optical system.

36. A device manufacturing method comprising developing a photosensitive substrate exposed with an exposure apparatus according to any one of claims 19 to 35.

37. Performing a first exposure operation in which a photosensitive substrate having a photosensitive material is moved in the first direction relative to a first projection optical system and a second projection optical system separated in the first direction, and light to which the photosensitive material is sensitive is irradiated onto a first region of the photosensitive substrate via an object having a pattern and the first projection optical system, and light to which the photosensitive material is sensitive is irradiated onto a second region of the photosensitive substrate via the object and the second projection optical system, thereby exposing the photosensitive substrate to a pattern; and performing a second exposure operation in which the photosensitive substrate is moved in the first direction or in a second direction opposite to the first direction relative to the first projection optical system and the second projection optical system, and light to which the photosensitive material is sensitive is irradiated onto a first region of the photosensitive substrate via an object and the first projection optical system, and light to which the photosensitive material is sensitive is irradiated onto a second region, thereby exposing the photosensitive substrate to a pattern identical to the pattern exposed in the first exposure operation. An exposure method comprising performing the following alternately, wherein the first region and the second region include overlapping regions in which at least a portion of each other in a direction perpendicular to the first direction.

38. The exposure method according to claim 37, wherein the photosensitive material is a negative-type photosensitive material that becomes insoluble in a developer when the cumulative exposure amount when the photosensitive material is continuously exposed over time with light to which it is sensitive exceeds a first exposure amount, and in each of the first exposure operation and the second exposure operation, the exposure amount of the photosensitive material by light to which it is sensitive, via the object and the first projection optical system and the second projection optical system, is less than the first exposure amount, and the first exposure operation and the second exposure operation are repeatedly performed alternately until the cumulative exposure amount of the photosensitive material exceeds the first exposure amount.

39. The exposure method according to claim 37 or 38, wherein, when the exposed photosensitive substrate is moved in the first direction and discharged, either the first exposure operation or the second exposure operation is determined as the exposure operation at the start of exposure, such that the last exposure operation performed is the first exposure operation.

40. An exposure method according to any one of claims 37 to 39, comprising: comparing the position of the pattern formed on the exposed photosensitive substrate with the design position of the pattern; and adjusting at least one of the settings for performing the first exposure operation and the settings for performing the second exposure operation based on the result of the comparison.

41. The exposure amount of the photosensitive substrate by light to which the photosensitive material is sensitive, via the object and the first projection optical system and the second projection optical system in the first exposure operation is set to 0, and the first exposure operation and the second exposure operation are performed alternately to form the pattern on the first photosensitive substrate; The exposure amount of the photosensitive substrate by light to which the photosensitive material is sensitive, via the object and the first projection optical system and the second projection optical system in the second exposure operation is set to 0, and the first exposure operation and the second exposure operation are performed alternately to form the pattern on the second photosensitive substrate; A first comparison process is performed to compare the position of the pattern formed on the exposed first photosensitive substrate with the design position of the pattern; A second comparison process is performed to compare the position of the pattern formed on the exposed second photosensitive substrate with the design position of the pattern; The exposure method according to any one of claims 37 to 40, further comprising adjusting at least one of the settings for performing the first exposure operation and the settings for performing the second exposure operation based on the results of the first comparison process and the second comparison process.

42. The exposure method according to claim 41, further comprising: adjusting the settings for executing the first exposure operation and the second exposure operation, based on the results of the first comparison process and the second comparison process; and the settings for executing the other exposure operations.

43. Performing a first exposure operation in which a photosensitive substrate having a photosensitive material is moved in a first direction relative to a projection optical system, and light to which the photosensitive material is sensitive is irradiated onto a first region of the photosensitive substrate via an object having a pattern and the projection optical system to expose the pattern to the first region; performing a second exposure operation in which the photosensitive substrate is moved in a second direction opposite to the first direction relative to the projection optical system, and light to which the photosensitive material is sensitive is irradiated onto a second region of the photosensitive substrate different from the first region of the photosensitive substrate via an object and the projection optical system to expose the pattern to the second region; performing a third exposure operation in which the photosensitive substrate is moved in a first direction relative to the projection optical system, and light to which the photosensitive material is sensitive is irradiated onto a second region of the photosensitive substrate via an object and the projection optical system to expose the same pattern to which the pattern exposed to the second region in the second exposure operation to the second region; An exposure method comprising: moving the photosensitive substrate in the second direction relative to the projection optical system, irradiating a first region of the photosensitive substrate with light to which the photosensitive material is sensitive via the object and the projection optical system, thereby performing a fourth exposure operation to expose the first region with the same pattern as the pattern exposed in the first region in the first exposure operation; and sequentially performing these steps, wherein the first region and the second region include an overlapping region in which at least a portion of each other in a direction perpendicular to the first direction.

44. An exposure method comprising irradiating a first region on a photosensitive substrate having a photosensitive material and a second region on the photosensitive substrate that partially overlaps with the first region with light through an object multiple times, thereby forming a pattern on the region on the photosensitive substrate where the cumulative exposure amount is equal to or greater than the first exposure amount.

45. The exposure method according to any one of claims 37 to 44, wherein the light to which the photosensitive material is sensitive has at least one peak wavelength of 365 nm, 405 nm, and 436 nm.

46. ​​An illumination optical system for illuminating a mask having a pattern; a first projection optical system and a second projection optical system arranged apart in a first direction, to which light from the illumination optical system is incident; a substrate stage for holding a photosensitive substrate having a photosensitive material; A control device that alternately performs the following operations: a first exposure operation in which, while moving the substrate stage in a first direction relative to the first projection optical system and the second projection optical system, light to which the photosensitive material is sensitive via an object having a pattern and the first projection optical system is irradiated onto a first region of the photosensitive substrate, and light to which the photosensitive material is sensitive via the object and the second projection optical system is irradiated onto a second region of the photosensitive substrate, thereby exposing the photosensitive substrate to a pattern; and a second exposure operation in which, while moving the photosensitive substrate in a first direction or a second direction opposite to the first direction relative to the first projection optical system and the second projection optical system, light to which the photosensitive material is sensitive via an object and the first projection optical system is irradiated onto a first region of the photosensitive substrate, and light to which the photosensitive material is sensitive via the object and the second projection optical system is irradiated onto a second region, thereby exposing the photosensitive substrate to a pattern identical to the pattern exposed in the first exposure operation; An exposure apparatus wherein the first region and the second region include an overlapping region in which at least a portion of each other overlaps in a direction perpendicular to the first direction.

47. The exposure apparatus according to claim 46, wherein the photosensitive material is a negative-type photosensitive material that becomes insoluble in a developer when the cumulative exposure amount when the photosensitive material is continuously exposed over time with light to which it is sensitive exceeds a first exposure amount, and the control device performs the first exposure operation and the second exposure operation in each of the first and second exposure operations such that the photosensitive substrate is exposed with an exposure amount less than the first exposure amount, and the first exposure operation and the second exposure operation are repeatedly performed alternately until the cumulative exposure amount of the photosensitive material exceeds the first exposure amount.

48. The exposure apparatus according to claim 46 or 47, wherein the light to which the photosensitive material is sensitive has at least one peak wavelength of 365 nm, 405 nm, and 436 nm.

49. The exposure apparatus according to any one of claims 46 to 48, wherein the exposed photosensitive substrate is moved in the first direction and discharged, and the control device determines either the first exposure operation or the second exposure operation as the exposure operation at the start of exposure, such that the last exposure operation to be performed is the first exposure operation.

50. The exposure apparatus according to any one of claims 46 to 49, wherein the control device adjusts at least one of the settings for performing the first exposure operation and the settings for performing the second exposure operation based on a comparison result between the position of the pattern formed on the exposed photosensitive substrate and the design position of the pattern.

51. The exposure apparatus according to any one of claims 46 to 50, wherein the control device adjusts at least one of the settings for executing the first exposure operation and the settings for executing the second exposure operation, based on a first comparison result between the position of the pattern formed on the first photosensitive substrate and the design position of the pattern, by alternately executing the first exposure operation and the second exposure operation, with the amount of exposure of the photosensitive substrate by light to which the photosensitive material is sensitive, via the mask and the first projection optical system and the second projection optical system, in the first exposure operation being set to 0, and a second comparison result between the pattern formed on the second photosensitive substrate and the design position of the pattern, by alternately executing the first exposure operation and the second exposure operation, with the amount of exposure of the photosensitive substrate by light to which the photosensitive material is sensitive, via the mask and the first projection optical system and the second projection optical system, in the second exposure operation being set to 0.

52. The exposure apparatus according to claim 51, wherein the control device sets the exposure amount of the first exposure operation or the second exposure operation to be performed first when forming the patterns on the first photosensitive substrate and the second photosensitive substrate to 0, and sets the exposure amount of the photosensitive substrate by light to which the photosensitive material is sensitive via the mask and the first projection optical system and the second projection optical system, respectively, to 0 in exposure operations other than the first exposure operation or the second exposure operation to be performed first, and adjusts the setting when the first exposure operation or the second exposure operation is performed first based on a third comparison result between the position of the pattern formed on the third photosensitive substrate and the design position of the pattern by alternately performing the first exposure operation and the second exposure operation.

53. The exposure apparatus according to any one of claims 46 to 52, wherein the photosensitive substrate has at least one side length or diagonal length of 500 mm or more.

54. An exposure method comprising: performing a light irradiation process n times (n is a natural number of 2 or more) on a substrate on which a layer of chemically amplified resist is provided, irradiating a first region on the substrate with light; and performing a light irradiation process n times (n is a natural number of 2 or more) on a second region on the substrate different from the first region, which includes an overlapping region that overlaps with the first region and a non-overlapping region other than the overlapping region, wherein the cumulative exposure amount of the non-overlapping region from the first to the (n-1)th light irradiation process is less than the target cumulative exposure amount, and the cumulative exposure amount of the non-overlapping region from the first to the nth light irradiation process is equal to or greater than the target cumulative exposure amount.

55. The exposure method according to claim 54, wherein the thickness of the chemically amplified resist layer is 10 μm or more.

56. The target integrated exposure dose for the non-overlapping region is 1000 mJ / cm². 2 The exposure method according to claim 54 or 55.

57. The exposure method according to any one of claims 54 to 56, wherein the target integrated exposure amount for the overlapping region is set to be greater than the target integrated exposure amount for the non-overlapping region.

58. The exposure method according to claim 57, wherein the cumulative exposure amount of the overlapping region from the first to the (n-1)th light irradiation treatment is less than the target cumulative exposure amount of the overlapping region, and the cumulative exposure amount of the overlapping region from the first to the nth light irradiation treatment is equal to or greater than the target cumulative exposure amount of the overlapping region.

59. The exposure method according to any one of claims 54 to 58, wherein each of the first to the nth light irradiation treatments comprises irradiating the substrate with light through a mask having a light-shielding pattern.

60. The exposure method according to any one of claims 54 to 59, wherein the exposure amount of the non-overlapping region in the kth (where k is a natural number satisfying 1 ≤ k < n) light irradiation treatment is smaller than the exposure amount of the non-overlapping region in the nth light irradiation treatment.

61. The exposure method according to any one of claims 54 to 60, wherein in at least one of the first to the nth light irradiation processes, the positional relationship between the image plane and the surface is adjusted so that the surface of the substrate irradiated with light through the optical system approaches the image plane of the optical system.

62. The exposure method according to any one of claims 54 to 61, wherein the distance between the surface of the substrate irradiated with light via the optical system and the image plane of the optical system during the k-th (k is a natural number satisfying 1 ≤ k ≤ n) light irradiation process is different from the distance between the surface and the image plane during the m-th (m is a natural number satisfying 1 ≤ m ≤ n and m ≠ k) light irradiation process.

63. The exposure method according to any one of claims 54 to 62, wherein n is 4 or greater.

64. The exposure method according to any one of claims 54 to 63, wherein the substrate is exposed with light containing the same peak wavelength in the first to the nth light irradiation treatments.

65. The exposure method according to any one of claims 54 to 64, wherein the first region and the second region are arranged in a direction parallel to the first direction, and each of the first to the nth light irradiation processes includes irradiating the first region with light through the projection optical system while moving the substrate with respect to the projection optical system in the first direction or in a second direction opposite to the first direction, and then irradiating the second region with light through the projection optical system while moving the substrate with respect to the projection optical system in the first direction or in a second direction.

66. The exposure method according to claim 65, comprising, after performing the nth light irradiation treatment, transporting the substrate in the first direction, wherein the second region is the region of the substrate that is last subjected to light irradiation among a plurality of regions, and in the nth light irradiation treatment, light is irradiated onto the second region via the projection optical system while moving the substrate in the first direction with respect to the projection optical system.

67. The exposure method according to any one of claims 54 to 64, wherein the first region and the second region are arranged in a direction intersecting the first direction, and each of the first to the nth light irradiation processes includes irradiating the first region with light through the first projection optical system and irradiating the second region with light through the second projection optical system, while moving the substrate in the first direction or in a second direction opposite to the first direction with respect to the first projection optical system and the second projection optical system.

68. The exposure method according to claim 67, further comprising the steps of transporting the substrate in the first direction after the nth light irradiation process, wherein if n is even, in the first light irradiation process, the substrate is moved in the second direction relative to the first projection optical system and the second projection optical system, while irradiating the first region with light through the first projection optical system and the second region with light through the second projection optical system; and if n is odd, in the first light irradiation process, the substrate is moved in the first direction relative to the first projection optical system and the second projection optical system, while irradiating the first region with light through the first projection optical system and the second region with light through the second projection optical system.

69. A device manufacturing method comprising developing a substrate treated by the exposure method described in any one of claims 54 to 68.

70. An exposure apparatus comprising: a substrate stage for holding a substrate on which a layer of chemically amplified resist is provided; an optical system for irradiating the substrate with light; and a control device, wherein the control device controls at least one of the substrate stage and the optical system to perform a light irradiation process n times (n is a natural number of 2 or more) for irradiating a first region on the substrate with light, and a light irradiation process n times for irradiating a second region on the substrate, which is different from the first region and includes an overlapping region that overlaps with the first region and a non-overlapping region other than the overlapping region; and the control device controls at least one of the substrate stage and the optical system to such that the cumulative exposure amount of the non-overlapping region from the first to the (n-1)th light irradiation process is less than a target cumulative exposure amount, and the cumulative exposure amount of the non-overlapping region from the first to the nth light irradiation process is equal to or greater than the target cumulative exposure amount.

71. The exposure apparatus according to claim 70, wherein the thickness of the chemically amplified resist layer is 10 μm or more.

72. The target integrated exposure dose for the non-overlapping region is 1000 mJ / cm². 2 The exposure apparatus according to claim 70 or 71.

73. The exposure apparatus according to any one of claims 70 to 72, wherein the control device sets the target integrated exposure amount for the overlapping region to be greater than the target integrated exposure amount for the non-overlapping region.

74. The exposure apparatus according to claim 73, wherein the optical system includes a fly-eye lens whose incident surface into which light is incident is located in a position conjugate to the substrate, and a light-shielding member located on the incident surface side of the fly-eye lens and shielding a portion of the fly-eye lens corresponding to the non-overlapping region, and the control device controls the light-shielding member to adjust the amount of light shielding in the portion by the light-shielding member, thereby setting the target integrated exposure amount of the overlapping region to be greater than the target integrated exposure amount of the non-overlapping region.

75. The exposure apparatus according to claim 73, wherein the optical system includes a light-reducing member for reducing the amount of light irradiated onto the non-overlapping region, and the control device controls the light-reducing member to adjust the amount of light reduction by the light-reducing member, thereby setting the target integrated exposure amount for the overlapping region to be greater than the target integrated exposure amount for the non-overlapping region.

76. The exposure apparatus according to any one of claims 70 to 75, wherein the control device controls at least one of the substrate stage and the optical system such that the cumulative exposure amount of the overlapping region from the first to the (n-1)th light irradiation process is less than the target cumulative exposure amount of the overlapping region, and the cumulative exposure amount of the overlapping region from the first to the nth light irradiation process is equal to or greater than the target cumulative exposure amount of the overlapping region.

77. The exposure apparatus according to any one of claims 70 to 76, wherein the control device controls the cumulative exposure amount of the non-overlapping region by controlling at least one of the moving speed of the substrate stage and the intensity of the light irradiated onto the substrate.

78. The exposure apparatus according to any one of claims 70 to 77, wherein the control device controls the cumulative exposure amount of the overlapping region by controlling at least one of the moving speed of the substrate stage, the intensity of the light irradiated onto the substrate, and the size of the overlapping region.

79. An exposure apparatus according to any one of claims 70 to 78, further comprising a mask stage for holding a mask having a light-shielding pattern, wherein the control device controls the substrate stage, the optical system, and at least one of the mask stage so that the light is irradiated onto the substrate through the mask during the first to the nth light irradiation processes.

80. The exposure apparatus according to any one of claims 70 to 79, wherein the control device controls at least one of the substrate stage and the optical system such that the exposure amount of the non-overlapping region in the kth (where k is a natural number satisfying 1 ≤ k < n) light irradiation process is smaller than the exposure amount of the non-overlapping region in the nth light irradiation process.

81. The exposure apparatus according to any one of claims 70 to 80, wherein the control device controls the substrate stage so that the image plane on which the light is incident approaches the surface of the substrate in each of the first to nth light irradiation processes.

82. The exposure apparatus according to any one of claims 70 to 81, wherein in the kth (where k is a natural number satisfying 1 ≤ k < n) light irradiation process, the distance between the image plane on which the light is incident and the surface of the substrate is greater than the distance between the image plane and the surface of the substrate in the nth light irradiation process.

83. An exposure apparatus according to any one of claims 70 to 82, wherein n is 4 or greater.

84. The exposure apparatus according to any one of claims 70 to 83, wherein the control device controls the optical system to expose the substrate with light containing the same wavelength in the first to the nth light irradiation process.

85. The exposure apparatus according to any one of claims 70 to 84, wherein the optical system includes a projection optical system for irradiating the substrate with the light, the first region and the second region are arranged in a direction parallel to the first direction, and the control device includes, in each of the first to the nth light irradiation processes, irradiating the first region with light through the projection optical system while moving the substrate in the first direction or a second direction opposite to the first direction with respect to the projection optical system, and then irradiating the second region with light through the projection optical system while moving the substrate in the first direction or a second direction with respect to the projection optical system.

86. The exposure apparatus according to claim 85, further comprising an unloading device for unloading the substrate, wherein the control device controls the unloading device to unload the substrate in a first direction after the nth light irradiation treatment, and the control device irradiates the second region with light via the projection optical system while moving the substrate in a first direction relative to the projection optical system during the nth light irradiation treatment.

87. An exposure apparatus according to any one of claims 70 to 84, further comprising a first projection optical system and a second projection optical system, wherein the first region and the second region are arranged in a direction intersecting a first direction, and the control device includes, in each of the first to the nth light irradiation processes, moving the substrate in a first direction or a second direction opposite to the first direction with respect to the first projection optical system and the second projection optical system, while irradiating the first region with light through the first projection optical system and irradiating the second region with light through the second projection optical system.

88. The exposure apparatus according to claim 87, further comprising an unloading device for unloading the substrate, wherein the control device includes unloading the substrate in a first direction after the nth light irradiation process, wherein if n is even, in the first light irradiation process, the control device moves the substrate in a second direction with respect to the first projection optical system and the second projection optical system, irradiating the first region with light through the first projection optical system and the second region with light through the second projection optical system, and if n is odd, in the first light irradiation process, the control device moves the substrate in a first direction with respect to the first projection optical system and the second projection optical system, irradiating the first region with light through the first projection optical system and the second region with light through the second projection optical system.

89. A device manufacturing method comprising developing a substrate exposed with an exposure apparatus according to any one of claims 70 to 88.

90. A first exposure operation is performed by moving a substrate having a layer of chemically amplified resist on its surface in the first direction relative to a first projection optical system and a second projection optical system that are separated in the first direction, irradiating a first region of the substrate with light sensitive to the chemically amplified resist via an object having a pattern and the first projection optical system, and irradiating a second region of the substrate with light sensitive to the chemically amplified resist via the object and the second projection optical system, thereby exposing the substrate to a pattern; and a second exposure operation is performed by moving the substrate in the first direction or in a second direction opposite to the first direction relative to the first projection optical system and the second projection optical system, irradiating a first region of the substrate with light sensitive to the chemically amplified resist via an object and the first projection optical system, and irradiating a second region of the substrate with light sensitive to the chemically amplified resist via the object and the second projection optical system, thereby exposing the substrate to a pattern identical to the pattern exposed in the first exposure operation, alternately performing these operations. An exposure method wherein the first region and the second region include an overlapping region in which at least a portion of each other overlaps in a direction perpendicular to the first direction.

91. The exposure method according to claim 90, wherein, when the exposed substrate is moved in the first direction and discharged, either the first exposure operation or the second exposure operation is determined as the exposure operation at the start of exposure, such that the last exposure operation performed is the first exposure operation.

92. The exposure method according to claim 90 or 91, comprising: comparing the position of the pattern formed on the exposed substrate with the design position of the pattern; and adjusting at least one of the settings for performing the first exposure operation and the settings for performing the second exposure operation based on the result of the comparison.

93. The first exposure operation and the second exposure operation are performed alternately, with the exposure amount of the substrate by light to which the chemically amplified resist is sensitive via the object and the first projection optical system and the second projection optical system each set to zero, thereby forming the pattern on the first substrate; the first exposure operation and the second exposure operation are performed alternately, with the exposure amount of the substrate by light to which the chemically amplified resist is sensitive via the object and the first projection optical system and the second projection optical system each set to zero, thereby forming the pattern on the second substrate; a first comparison process is performed to compare the position of the pattern formed on the exposed first substrate with the design position of the pattern; a second comparison process is performed to compare the position of the pattern formed on the exposed second substrate with the design position of the pattern; and at least one of the settings for performing the first exposure operation and the settings for performing the second exposure operation is adjusted based on the results of the first and second comparison processes. The exposure method according to any one of claims 90 to 92, including the following:

94. The exposure method according to claim 93, further comprising adjusting, based on the results of the first comparison process and the second comparison process, the settings for when the first exposure operation is performed and the settings for when the other exposure operations are performed.

95. Performing a first exposure operation in which a substrate having a layer of chemically amplified resist on its surface is moved in a first direction relative to a projection optical system, and light to which the chemically amplified resist is sensitive is irradiated onto a first region of the substrate via an object having a pattern and the projection optical system, thereby exposing the pattern onto the first region; performing a second exposure operation in which the substrate is moved in a second direction opposite to the first direction relative to the projection optical system, and light to which the chemically amplified resist is sensitive is irradiated onto a second region of the substrate different from the first region, thereby exposing the pattern onto the second region; performing a third exposure operation in which the substrate is moved in a first direction relative to the projection optical system, and light to which the chemically amplified resist is sensitive is irradiated onto a second region of the substrate via an object and the projection optical system, thereby exposing the same pattern to which the pattern exposed in the second region in the second exposure operation onto the second region; An exposure method comprising: moving the substrate in the second direction relative to the projection optical system, irradiating a first region of the substrate with light to which the chemically amplified resist is sensitive via the object and the projection optical system, thereby performing a fourth exposure operation to expose the first region with the same pattern as the pattern exposed in the first region in the first exposure operation; and sequentially performing these steps, wherein the first region and the second region include an overlapping region in which at least a portion of each other in a direction perpendicular to the first direction.

96. An exposure method comprising irradiating a first region on a substrate having a layer of chemically amplified resist on its surface, and a second region on the substrate that partially overlaps with the first region, with light irradiated through an object multiple times, thereby forming a pattern in the region on the substrate where the cumulative exposure amount is equal to or greater than a first exposure amount.

97. The first exposure dose is 1000 mJ / cm². 2 The exposure method according to claim 96.

98. The exposure method according to any one of claims 90 to 97, wherein the thickness of the chemically amplified resist layer is 10 μm or more.

99. An illumination optical system for illuminating a mask having a pattern; a first projection optical system and a second projection optical system arranged apart in a first direction, to which light from the illumination optical system is incident; a substrate stage for holding a substrate on which a layer of chemically amplified resist is provided on the surface; A control device that alternately performs the following operations: a first exposure operation in which, while moving the substrate stage in a first direction relative to the first projection optical system and the second projection optical system, light to which the chemically amplified resist is sensitive via an object having a pattern and the first projection optical system is irradiated onto a first region of the substrate, and light to which the chemically amplified resist is sensitive via an object and the second projection optical system is irradiated onto a second region of the substrate, thereby exposing a pattern to the substrate; and a second exposure operation in which, while moving the substrate in a first direction or a second direction opposite to the first direction relative to the first projection optical system and the second projection optical system, light to which the chemically amplified resist is sensitive via an object and the first projection optical system is irradiated onto a first region of the substrate, and light to which the chemically amplified resist is sensitive via an object and the second projection optical system is irradiated onto a second region, thereby exposing the substrate to a pattern identical to the pattern exposed in the first exposure operation. An exposure apparatus wherein the first region and the second region include an overlapping region in which at least a portion of each other overlaps in a direction perpendicular to the first direction.

100. The exposure apparatus according to claim 99, wherein the exposed substrate is moved in the first direction and discharged, and the control device determines either the first exposure operation or the second exposure operation as the exposure operation at the start of exposure, such that the last exposure operation to be performed is the first exposure operation.

101. The exposure apparatus according to claim 99 or 100, wherein the control device adjusts at least one of the settings for performing the first exposure operation and the settings for performing the second exposure operation based on a comparison result between the position of the pattern formed on the exposed substrate and the design position of the pattern.

102. The exposure apparatus according to any one of claims 99 to 101, wherein the control device adjusts at least one of the settings for executing the first exposure operation and the settings for executing the second exposure operation, based on a first comparison result between the position of the pattern formed on the first substrate and the design position of the pattern, obtained by alternately executing the first exposure operation and the second exposure operation, with the amount of exposure of the substrate by light to which the chemically amplified resist is sensitive, via the mask and the first projection optical system and the second projection optical system, in the first exposure operation being set to 0, and a second comparison result between the pattern formed on the second substrate and the design position of the pattern, obtained by alternately executing the first exposure operation and the second exposure operation, with the amount of exposure of the substrate by light to which the chemically amplified resist is sensitive, via the mask and the first projection optical system and the second projection optical system, in the second exposure operation being set to 0.

103. The exposure apparatus according to claim 102, wherein the control device sets the exposure amount of the first exposure operation or the second exposure operation to be performed first when forming the patterns on the first substrate and the second substrate to 0, and sets the exposure amount of the substrate by light to which the chemically amplified resist is sensitive via the mask and the first projection optical system and the second projection optical system, respectively, to 0 in exposure operations other than the first exposure operation or the second exposure operation to be performed first, and adjusts the setting when the first exposure operation or the second exposure operation is performed first based on a third comparison result between the position of the pattern formed on the third substrate and the design position of the pattern by alternately performing the first exposure operation and the second exposure operation.

104. The exposure apparatus according to any one of claims 99 to 103, wherein the thickness of the chemically amplified resist layer is 10 μm or more.

105. The exposure apparatus according to any one of claims 99 to 104, wherein the substrate has at least one side length or diagonal length of 500 mm or more.

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