Methods for creating local concentrations of hydrogen within solids

Abstract

The present invention relates to methods and procedures to creating areas of high concentrations of HYDROGEN within solids. These methods utilize extremely strong electric fields that exists at the INTERFACE area between PRIMARY SOLIDs and SECONDARY SOLIDs that each have different work function values. Prescribed types of solids allow absorbed HYDROGEN atoms to migrate to the INTERFACE area, followed by the ionization of HYDROGEN atoms within this area. The strong electric field will concentrate HYDROGEN ions with an extreme high density within the INTERFACE area. A suitable FULLY ENCLOSED INTERFACE area prevents the escape of accumulated HYDROGEN ions from the INTERFACE area, safeguarding that accumulation of ions continues until the desired density of HYDROGEN ions has been reached.

Description

[0001] METHODS FOR CREATING LOCAL CONCENTRATIONS OF HYDROGEN WITHIN SOLIDS

[0002] Field of the present invention

[0003] The present invention relates to methods and procedures to create areas of high HYDROGEN concentration within solids, more specific in metal lattices, by performing interactions between specific types of MATTER and HYDROGEN. Related patent applications

[0004] This application is a divisional application of patent application EP24213662.0, filed on 18 November 2024 and patent application EP24218133.7, filed on 6 December 2024. Definitions

[0005] Some terms or words in this document are written in upper case format. Except for the words of the title of present invention, they have specific meanings:

[0006] CHARGED PARTICLES

[0007] Ions, electrons

[0008] CONDUCTING SOLID

[0009] A solid that allows electrons to pass through easily.

[0010] DIPOLE

[0011] Charge dipole composed of migrating electrons and, where applicable electrons, that are freed by local HYDROGEN ionization at an INTERFACE.

[0012] ELECTROCHEMICAL MEDIUM MATTER containing free moving ions to promote electrolysis.

[0013] ENERGY PRODUCTION

[0014] Energy production caused by physics that, at the date of filing of current patent application, not yet fully is understood. Suggested causes are nuclear interactions, e.g. nuclear fusions or nuclear transmutations and / or effects of local superconductivity.

[0015] EXAMPLE

[0016] Examples that are provided for illustrative purposes and should not be construed as limiting the scope of the present invention. It will be understood by those skilled in the art that various modifications, substitutions, and alterations can be made without departing from the spirit and scope of the claimed invention.

[0017] FERMI EQUILIBRIUM REGION

[0018] The region where the Fermi levels of PRIMARY SOLIDs and SECONDARY SOLIDs align upon contact at their INTERFACES, also known as depletion region.

[0019] FULLY ENCLOSED

[0020] Fully enclosed such that the INTERFACE area is only in direct contact with PRIMARY SOLID and SECONDARY SOLID and / or an ISOLATOR in such a manner that ions and / or electrons only can migrate within the PRIMARY SOLID and SECONDARY SOLID and cannot escape from the INTERFACE area.

[0021] HYDROGEN

[0022] Protium, Deuterium or Tritium.

[0023] INTERFACE

[0024] Contact interface between different MATTERS.

[0025] ISOLATOR MATTER that prevents the flow of ions and / or electrons.

[0026] MATTER

[0027] Matter in the plasma, gas, liquid, or solid state.

[0028] MECHANICAL

[0029] Impact by pressure waves, cracking of solid(s) due to expansion by HYDROGEN absorption or shrink due to temperature change and / or desorption of HYDROGEN.

[0030] METAL

[0031] Metal element from the periodic table or an alloy thereof.

[0032] PRIMARY SOLID A CONDUCTING SOLID that has a high ability of absorbing HYDROGEN and has a higher work function value than the work function value of the applied SECONDARY SOLID under similar circumstances. Preferably the PRIMARY SOLID has an increased work function value when it has absorbed HYDROGEN. Both PRIMARY SOLIDs and SECONDARY SOLI Ds are part of the same construction and share a common INTERFACE.

[0033] SECONDARY SOLID A CONDUCTING SOLID or an n-type semiconductor that has a lower working function compared to the applied PRIMARY SOLID under similar circumstances. Both PRIMARY SOLIDs and SECONDARY SOLIDs are part of the same construction and share a common INTERFACE.

[0034] STIMULI

[0035] Any method or combination of methods to deliberately, directly or indirectly, causing accelerating, decelerating or creation of ions and / or accelerating electrons and / or alters the delta work function value at the INTERFACES of PRIMARY SOLIDs and SECONDARY SOLIDs and / or influences the electric field strength at the INTERFACE.

[0036] The following EXAMPLES are provided:

[0037] The use of a power source that generates pulsed and / or high frequency alternating current of electrons;

[0038] The use of a power source that generates pulsed and / or high frequency alternating electromagnetic waves;

[0039] The use of a heat source generating static and / or dynamic heat supply;

[0040] The use of a plasma discharge source;

[0041] The use of a high voltage power source;

[0042] The use of a source or method that causes MECHANICAL distortion, e.g. by means of piezo electric devices.

[0043] Furthermore, the symbols in the figures have following meaning:

[0044] Table 1

[0045]

[0046] Background of the present invention

[0047] The present invention's prior art relates to EP24213662.0, methods for the production of energy, filed on 18 November 2024 and EP24218133.7, methods for the production of electricity and / or light emission” and is a divisional application to them. Application fields of present invention.

[0048] The present invention can be applied as part of various applications.

[0049] One application concerns the production of energy as specified by Ref.8.

[0050] A second application concerns the production of electricity and / or light emission as specified by Ref.9.

[0051] A third application concerns the prevention of HYDROGEN embrittlement. Some forms of HYDROGEN embrittlement may be caused by the formation of high concentrations of HYDROGEN within METALS. Present invention may serve to obtain insights of such effect and may assist in preventing such effects.

[0052] More applications may develop after the disclosures by present invention. Supportive literature and prior art

[0053] Ref.1 Contact Potentials, Fermi Level Equilibration, and Surface Charging, Pekka Peljo, Jose A. Manzanares, and Hubert H. Girault.

[0054] This reference provides relevant characteristics of an electric DIPOLE within a FERMI EQUILIBRIUM REGION of metal to metal interface area.

[0055] Ref.2 Adsorption of hydrogen on nickel single crystal surfaces, K. Christmann, O. Schober, G. Ertl, and M. Neumann.

[0056] This reference relates to the increase of the work function value of nickel when HYDROGEN is absorbed.

[0057] Ref.3 Adsorption of hydrogen on palladium single crystal surfaces, H. Conrad, G. Ertl and E. E. Latta.

[0058] This reference relates to the increase of the work function value of palladium when HYDROGEN is absorbed.

[0059] Ref.4 Patent application WO2023228630A1, potential difference generation device.

[0060] This reference relates to the phenomenon of released CHARGED PARTICLES in the case a multilayer of nickel and copper has been subjected to hydrogen.

[0061] The present invention specifies more accurate what causes the release of CHARGED PARTICLES.

[0062] Ref.5 Patent application US10841989B2, gaseous-phase ionizing radiation generator.

[0063] This reference supports the phenomenon as claimed by Ref.4.

[0064] Ref.6 Critical fields for ionization of the hydrogen molecule and the molecular hydrogen ion, M. B. Smirnov and V. P. Kranov.

[0065] This reference describes the required field strength required to ionize hydrogen.

[0066] Ref.7 Microwave ionization of hydrogen atoms, Dima Shepelyansky (2012), Scholarpedia, 7(1):9795. This reference provides information about microwave ionization of hydrogen atoms as an example of suitable STIMULI.

[0067] Ref.8 Patent application EP24213662.0, methods for the production of energy. This patent applications applies the methods claimed by present invention for obtaining energy production.

[0068] Ref.9 Patent application EP24218133.7, methods for the production of electricity and / or light emission. This patent applications applies the methods claimed by present invention for obtaining electricity and / or light emission. Assumptions

[0069] It is assumed that those skilled in the art have sufficient knowledge and skills to implement and understand the present invention, including:

[0070] The understanding of following patent applications and / or patents:

[0071] WO2023228630A1 (Ref.4), US10841989B2 (Ref.5), EP24213662.0 (Ref.8), EP24218133.7 (Ref.9);

[0072] The understanding of Ref.1, Ref.2, Ref.3, Ref.6 and Ref.7 as mentioned in section “Supportive literature and prior art” of the present invention specification;

[0073] The ability to replicate implementations specified in above references;

[0074] The ability to apply technology required to arrange absorption of HYDROGEN atoms and / or HYDROGEN ions within a FERMI EQUILIBRIUM REGION;

[0075] The ability to implement technology to produce suitable STIMULI;

[0076] The ability to arrange sufficient safety measures. Summary of the present invention

[0077] The present invention introduces novel methods and procedures to create areas containing high concentrations of HYDROGEN within specific solids. These methods utilize extremely strong electric fields that exist at the INTERFACE areas between PRIMARY SOLI Ds and SECONDARY SOLIDs that each have different work function values. PRIMARY SOLIDs allow absorbed HYDROGEN atoms to migrate to the INTERFACE areas, followed by the ionization of HYDROGEN atoms within these areas. The strong electric field will concentrate HYDROGEN ions with an extreme high density at the INTERFACE areas. Preferred methods include the use of PRIMARY SOLIDs whose work function value is increased by the absorption of HYDROGEN, the use of additional STIMULI and implementing FULLY ENCLOSED INTERFACE areas. Increased work function values and / or additional STIMULI further improve the ionization and accumulation of HYDROGEN ions. Escape of accumulated HYDROGEN ions from the INTERFACE areas is prevented by suitable FULLY ENCLOSED INTERFACE areas, safeguarding that accumulation of HYDROGEN ions continues until the desired density of HYDROGEN ions has been reached.

[0078] The methods of present invention are composed of following steps:

[0079] Step 1. The creation of an electric DIPOLEs, within (FULLY ENCLOSED) INTERFACE areas between suitable PRIMARY SOLIDs and suitable SECONDARY SOLIDs.

[0080] Step 2. The absorption of HYDROGEN by mainly or only the PRIMARY SOLIDs.

[0081] Step 3. Migration of absorbed HYDROGEN atoms towards the INTERFACE areas where they will be ionized by the strong electric field present.

[0082] Step 4. Accumulation of HYDROGEN ions at the INTERFACE areas until the desired density of HYDROGEN ions has been reached. FULLY ENCLOSED INTERFACE areas will be required for implementations where undesired escape of CHARGED PARTICLES from the INTERFACE areas occurs. Escape of CHARGED PARTICLES limits the accumulation of HYDROGEN ions at the INTERFACE areas.

[0083] Step 5. Introduction of STIMULI to enhance and / or control the accumulation of HYDROGEN ions. Note: in preferred applications PRIMARY SOLI Ds are applied whose work function value increases when HYDROGEN has been absorbed. An increased work function value will cause an increased electric field strength at the INTERFACE areas which allows for improved HYDROGEN ionization conditions. In some cases the additional migration of electrons due to the altered delta work function value will also contribute to the ionization of HYDROGEN atoms by means of electromagnetic fields caused by the acceleration of electrons that move through the strong electric field in order to create new equilibrium. Brief description of drawings

[0084] Figure 1 illustrates the principle of migration of electrons at the INTERFACE area between a PRIMARY SOLID and a SECONDARY SOLID upon contact, caused by the alignment of the Fermi levels of both solids upon contact.

[0085] Figure 2 illustrates the electric DIPOLE and the corresponding electric field strength at the INTERFACE area between a PRIMARY SOLIDs and a SECONDARY SOLID whereby both type of solids are CONDUCTING SOLIDs.

[0086] Figure 3 illustrates the formation of an area containing a high density HYDROGEN ions and illustrates the increase of the electric DIPOLE and the corresponding increased electric field strength at the INTERFACE area between a PRIMARY SOLID and a SECONDARY SOLID caused by an increased work function value of a preferred PRIMARY SOLID that has absorbed hydrogen.

[0087] Figure 4 illustrates the electric DIPOLE and the corresponding electric field at the INTERFACE area between the PRIMARY SOLID and the SECONDARY SOLID whereby the PRIMARY SOLID consist of a CONDUCTING SOLID and the SECONDARY SOLID consist of an n-type semiconductors.

[0088] Figure 5 illustrates the formation of an area containing a high density HYDROGEN ions and illustrates the increase of the electric DIPOLE and the corresponding increased electric field strength at the INTERFACE area between a PRIMARY SOLID and a SECONDARY SOLID caused by an increased work function value of a PRIMARY SOLID that has absorbed hydrogen, whereby the PRIMARY SOLID consist of CONDUCTING SOLID and the SECONDARY SOLID consist of an n-type semiconductor.

[0089] Figure 6 illustrates escaping HYDROGEN ions from the INTERFACE area that holds an extreme high density HYDROGEN ions.

[0090] Figure 7 illustrates EXAMPLES of FULLY ENCLOSED INTERFACE areas that prevent the escape of HYDROGEN ions from INTERFACE areas. Detailed description of the drawings

[0091] A clear understanding of the key advantages of the present invention may be had by reference to the appended drawings, which illustrate the principles of the invention, although it will be understood that such drawings depict preferred embodiments of the invention and, therefore, are not to be considered as limiting its scope with regard to other embodiments which the invention is capable of contemplating. The appended drawings are two dimensional cross section representations of three dimensional models. Accordingly:

[0092] Figure 1 represents a composition 100 of a cross section of a composition of a PRIMARY SOLID 110 and a SECONDARY SOLID 130 interfacing each other at location 120 such that a FERMI EQUILIBRIUM REGION is created by migration of electrons 140 from the SECONDARY SOLID 130 to the PRIMARY SOLID 110 upon contact, initiated by the different work function values of both solids.

[0093] Figure 2 represents a composition 200 to illustrate the density of electrons as a function of position within the FERMI EQUILIBRIUM REGION 220 near the INTERFACE 120, composed of a PRIMARY SOLID 110 and a SECONDARY SOLID 130, whereby both types of solids are CONDUCTING SOLIDs, such that an electric DIPOLE 210 is formed within the FERMI EQUILIBRIUM REGION 220, created by a migration of electrons 140 from from the SECONDARY SOLID 130 to the PRIMARY SOLID 110. This electric DIPOLE causes an electric field E 260 that has an indicative strength distribution 230 as a function of position within the FERMI EQUILIBRIUM REGION 220. The area that receives the majority of the migrated electrons within PRIMARY SOLID 110 is indicated by 240. The area that supplied the majority of the migrated electrons within SECONDARY SOLID 130 is indicated by 250. Note that DIPOLE 210 not always consists of a symmetric distribution as indicated. The actual (a)symmetry of its distribution will depend on many factors, e.g. volume ratio, work function differences between applied PRIMARY SOLIDs and SECONDARY SOLIDs.

[0094] Figure 3 represents the composition 300 to illustrate the formation of an area containing a high density HYDROGEN ions. This effect can be explained by summing up the sequence of consecutive events that cause it: Event 1: Starting situation is the presence of the electric DIPOLE 210 caused by the INTERFACE between a PRIMARY SOLID 110 and a SECONDARY SOLID 130, whereby both types of solids are CONDUCTING SOLIDs.

[0095] Event 2: Once HYDROGEN is being absorbed by mainly the PRIMARY SOLID 110, the migration of HYDROGEN atoms 310 occurs towards the area 240 that has the highest density of electrons within the FERMI EQUILIBRIUM REGION 220.

[0096] Event 3: The arrival of migrating HYDROGEN atoms 310 at the INTERFACE 120.

[0097] Event 4a: In the case a PRIMARY SOLID is applied whose work function value is not altered by the absorption of HYDROGEN atoms, HYDROGEN atoms, once they have migrated to the INTERFACE area, will be ionized by the electric field when its strength is sufficiently strong.

[0098] Event 4b: In the case a PRIMARY SOLID is applied whose work function value increases by the absorption of HYDROGEN atoms when HYDROGEN atoms arrive at the INTERFACE, the increased work function value of such PRIMARY SOLID causes additional migration of electrons 330 from the area of the SECONDARY SOLID 130 that contains the lowest density electrons 250 towards the area 240 that has the highest density electrons within the PRIMARY SOLID 110. The additional migration of electrons cause an increase 360 of the electric DIPOLE 370 and an increases 390 of the electric field strength 380 at the INTERFACE. When the electric field strength is sufficient, HYDROGEN atoms will be ionized. Electromagnetic field effects will occur, caused by additional migrated electrons as a result of the increased delta work function value and may additionally contribute to the HYDROGEN ionization. These additional migrated electrons are accelerated by the strong electric field at the INTERFACE 120 and gain energy in the order of the delta work function value (~ up to several eV). Electrons with gained kinetic energy may also cause so called impact ionization.

[0099] Figure 4 is similar to Figure 2, representing the composition 400 where the SECONDARY SOLID 130 consists of an n-type semiconductor instead of a CONDUCTING SOLID.

[0100] Figure 5 is similar to Figure 3, representing the composition 500 where the SECONDARY SOLID 130 consists of an n-type semiconductor instead of a CONDUCTING SOLID. Note that Figure 2, Figure 3, Figure 4 and Figure 5 presents simplified graphs of electric DIPOLEs and electric field strength distributions. They serve to illustrate applicable principles.

[0101] Figure 6 represents the compositions 600 illustrating the escaping HYDROGEN ions 610 from the applied solids. The effect is caused by an ultra high density of HYDROGEN ions within the PRIMARY SOLID area 240 near the INTERFACE 120.

[0102] Note that not all physical effects are indicated within Figure 6. The purpose of Figure 6 solely serves to explain the relevant effect of a very high concentration of HYDROGEN ions in such implementation. Also note that undesired escape of CHARGED PARTICLES as indicated by Figure 6 should be prevented in some applications. Escape of electrons and / or HYDROGEN ions from the INTERFACE area will limit the density of HYDROGEN ions at the INTERFACE area. EXAMPLES of preferred constructions that prevents such escapes are given by Figure 7.

[0103] Figure 7 represents the composition 700 illustrating four EXAMPLE options to enclose the INTERFACE 120 between a PRIMARY SOLID 110 and a SECONDARY SOLID 130, preventing the escape of CHARGED PARTICLES, to allow for sufficient accumulation of HYDROGEN ions. Figure 7 represents two dimensional cross sections of three dimensional models.

[0104] Option (A) is an impression of a FULLY ENCLOSED INTERFACE 120 of a sphere shaped SECONDARY SOLID 130 that is FULLY ENCLOSED by a layer of PRIMARY SOLID 110. Option (B) is an impression of a FULLY ENCLOSED INTERFACE 120 of a cubical shaped SECONDARY SOLID 130 that is surrounded by a FULLY ENCLOSED layer of PRIMARY SOLID 110.

[0105] Option (C) is an impression of a FULLY ENCLOSED INTERFACE 120 of a hollow sphere shaped SECONDARY SOLID 130 that has a FULLY ENCLOSED INTERFACE 120 by PRIMARY SOLID 110.

[0106] Option (D) is an impression of a FULLY ENCLOSED INTERFACE area where in addition a suitable ISOLATOR 710 covers the INTERFACE area. This ISOLATOR 710 shall stretch over a length 720 that is sufficient to prevent the escape of CHARGED PARTICLES.

[0107] Note: the above EXAMPLES are just a few EXAMPLES of solutions to create FULLY ENCLOSED INTERFACES 120. It should be understood that there are many other solutions to create similar FULLY ENCLOSED INTERFACE solutions by those skilled in the art. Note: To achieve the largest electric field strength at the contact interface between SECONDARY SOLID and PRIMARY SOLID, the SECONDARY SOLID part should be designed with sharp features and a small size relative to the PRIMARY SOLID body. Such configuration enhances charge concentration and maximizes the local electric field strength. Detailed description of the present invention

[0108] By applying a combination of known physics effects, methods and procedures are presented that allow for creating high densities of HYDROGEN atoms, HYDROGEN ions and electrons within specific solids.

[0109] Areas with extreme high densities of HYDROGEN atoms, HYDROGEN ions and electrons can be created within the structure of a suitable CONDUCTING SOLID that is able to absorb HYDROGEN, preferably, but not exclusively, a suitable METAL such as nickel or palladium.

[0110] The first required physics effect is the creation of a strong electric field at the INTERFACE area between a PRIMARY SOLID and a SECONDARY SOLID. Upon contact, electrons very close to the INTERFACE migrate from the solid that has the lowest work function value to the solid that has the highest work function value. This creates an electric DIPOLE and an electric field within the FERMI EQUILIBRIUM REGION at the INTERFACE area.

[0111] The second required physics effect is the capability of HYDROGEN absorption by at least the preferred PRIMARY SOLI Ds.

[0112] The third required physics effect is the ionization of HYDROGEN atoms near the INTERFACE when the electric field strength at the INTERFACE is larger than the threshold value at which absorbed HYDROGEN atoms will be ionized in such situation.

[0113] It is preferred to apply PRIMARY SOLI Ds, whose work function value increases by the absorption of HYDROGEN. Once HYDROGEN atoms have been absorbed by such preferred PRIMARY SOLID(s), migrated and arrived at the INTERFACE, an increased work function value of those preferred PRIMARY SOLI Ds will be established. See also Ref.2 and Ref.3. Once the work function value of the PRIMARY SOLID(s) increases, while the work function value of the SECONDARY SOLID(s) does not alter in a similar manner, additional electrons will migrate from the SECONDARY SOLID(s) to the PRIMARY SOLID(s), causing an increased electric DIPOLE and an increased electric field strength at the INTERFACE. Migrating electrons will create a strong local electromagnetic fields within the INTERFACE area since they will accelerate while traveling through the strong electric field within the INTERFACE area to obtain a new equilibrium.

[0114] An EXAMPLE is given of a copper-nickel combination supporting the claim of ionization of HYDROGEN in such situation in general under the right conditions:

[0115] The difference between the work function value of nickel and copper is approx. 0.3 ~ 0.7 eV. The contact potential at a metal-metal junction is typically on the order of the work function value difference. For a nickel-copper interface, the contact potential will be in the range of 0.3 ~ 0.7 V. For a nickel-copper combination specifically, the electric field strength at their INTERFACE would likely be in the order of 106~ 109Volt per meter, assuming no external voltage is applied. The space charge area at such an INTERFACE area would likely be extremely thin, possibly on the order of nanometers or less. The theoretical critical field strength to ionize hydrogen is approximately 5.14 x 1011Volt per meter in vacuum.

[0116] However, due to quantum effects and other factors, ionization may begin to occur at lower electric field strengths under the given circumstances at INTERFACE areas between preferred PRIMARY SOLIDs and SECONDARY SOLIDs. When HYDROGEN is embedded in a nickel lattice, it occupies specific sites called trap sites. These trap sites have a binding energy that affects the ionization process: The binding energy of HYDROGEN to trap sites in nickel is typically around 0.1 ~ 0.3 eV, depending on the type of defect. This binding energy effectively reduces the energy required to ionize the hydrogen atom compared to free hydrogen in a vacuum environment. When HYDROGEN is absorbed within nickel lattice the work function value of nickel increases, therefore increasing the delta work function value. See Ref.2.

[0117] A SECONDARY SOLID composed of an n-type semiconductor material offers the option to further increase the electric field strength at the INTERFACE. Suitable n-type semiconductors have a lower work function value than that of CONDUCTING SOLIDs applied as SECONDARY SOLIDs. In addition, a reverse bias voltage applied to the combination of a PRIMARY SOLID and an n-type semiconductor SECONDARY SOLID further increases the electric field strength at the INTERFACE.

[0118] The fourth physics effect is the accumulation of HYDROGEN ions within the INTERFACE area. Each HYDROGEN atom that is ionized will be attracted towards the area with the highest electron density. The electric field strength at the INTERFACE will not be significantly affected by the ionization of HYDROGEN atoms since it will be maintained by the difference in work function values of the applied solids. As long as HYDROGEN atoms will migrate to the INTERFACE area the ionization of HYDROGEN atoms will continue and the density of electrons and HYDROGEN ions will continue to increase at the INTERFACE area. At the date of filing of present invention no literature is known that indicates electrons and HYDROGEN ions will recombine in such situation. In the situation where additional STIMULI are required to increase the density of HYDROGEN ions, additional HYDROGEN ionization can be arranged by suitable STIMULI, for example by introducing a strong alternating electromagnetic field area within the INTERFACE, a method of HYDROGEN ionization that generally is known as microwave ionization, see Ref.7. A FULLY ENCLOSED INTERFACE area will be required for implementations where the escape of CHARGED PARTICLES from the INTERFACE area limits the accumulation of HYDROGEN ions.

Claims

Claims1 Methods and processes for creating areas of high concentrations of HYDROGEN within solids, comprising the following steps:step 1, compose one or multiple INTERFACES between PRIMARY SOLIDs and SECONDARY SOLIDs;step 2, arrange for HYDROGEN absorption by mainly the PRIMARY SOLIDs; step 3, arrange for absorbed HYDROGEN atoms to migrate towards and arrive at the INTERFACE areas;step 4, arrange for absorbed HYDROGEN atoms to ionize at the INTERFACE areas; step 5, arrange for HYDROGEN ions to accumulate at the INTERFACE areas, until the desired density of HYDROGEN ions has been reached.2 Methods and procedures according to claim 1, wherein PRIMARY SOLIDs are utilized, characterized by an increase in their work function value following the absorption of HYDROGEN.3 Methods and procedures according to claim 1 or 2, wherein the SECONDARY SOLIDs are n-type semiconductors.4 Procedure according to any one of claims 1 to 3, wherein the object composed of PRIMARY SOLIDs and SECONDARY SOLIDs, has FULLY ENCLOSED INTERFACE areas.5 Procedure according to any one of claims 1 to 4, wherein STIMULI are applied within the INTERFACE areas to enhance and / or control the accumulation of HYDROGEN ions within the INTERFACE areas.6 Procedure according to any one of claims 1 to 5, wherein HYDROGEN is supplied in the gaseous state.7 Procedure according to any one of claims 1 to 5, wherein HYDROGEN is supplied in the plasma state.8 Procedure according to any one of claims 1 to 5, wherein HYDROGEN is supplied by means of electrolysis using an ELECTROCHEMICAL MEDIUM.

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