Electronic component and method of manufacturing same, and electronic component device and method of manufacturing same

Abstract

This electronic component comprises a first substrate and a bump. The first substrate has a substrate body and an electrode pad provided on at least one surface of the substrate body. The bump has: a pillar that has a hollow structure with both ends open and that is disposed such that one end of the both ends is in contact with the electrode pad; and a bonding member disposed on an end of the pillar on the opposite side from the side in contact with the electrode pad or in the hollow structure of the pillar.

Description

Electronic components and methods for manufacturing the same, and electronic component devices and methods for manufacturing the same

[0001] This disclosure relates to electronic components and methods for manufacturing the same, as well as electronic component devices and methods for manufacturing the same.

[0002] Semiconductor devices require a package to protect them from the external environment, ensure various reliability requirements, and facilitate mounting onto a substrate. Packages come in various forms. Generally, a package is widely used in practice in which a semiconductor device is fixed to tabs formed on a metal lead frame, the electrodes on the surface of the semiconductor device are electrically connected to the inner leads with gold wires, and the device, gold wires, and part of the lead frame are sealed using an epoxy resin composition by a low-pressure transfer molding method. Such resin-sealed semiconductor devices have a considerably large package size compared to the semiconductor device size, making them extremely inefficient from the standpoint of high-density mounting. Therefore, package forms have shifted from pin-insertion type to surface-mount type, and miniaturization and thinning have been actively pursued. However, as long as the structure employs mounting a semiconductor device on a metal lead frame and then resin-sealing it after wire bonding, there are limits to how much mounting efficiency can be improved. In recent years, various small packages called CSPs (Chip Scale Packages) have been developed to meet the demands for high integration, high functionality, multi-pin, system integration, high speed, and low cost of semiconductor devices. As a method for mounting semiconductor elements onto packaging substrates, flip-chip mounting is increasingly being adopted due to its superior mounting efficiency, electrical characteristics, and ability to handle multiple pins.

[0003] In order to improve the connection reliability of a semiconductor device, there is provided a semiconductor device including: a semiconductor package; a wiring board on which the semiconductor package is mounted; a plurality of arranged bumps that join a plurality of first electrodes of the semiconductor package and a plurality of second electrodes of the wiring board; and a filler material filled between the semiconductor package and the wiring board to connect the semiconductor package and the wiring board. The wiring board includes a groove portion provided along the plurality of bumps on a surface facing the semiconductor package, and a coating layer provided on an inner surface of the groove portion to repel the filler material. The filler material is filled around the plurality of bumps away from the groove portion (for example, see Patent Document 1).

[0004] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2021-158238

[0005] The shape of bumps provided on a semiconductor device or a substrate used for flip-chip mounting is often cylindrical from the viewpoints of stress relaxation, compatibility with a manufacturing process, and the like. However, due to the increase in the size of semiconductor devices, the miniaturization of bump sizes, and the like, the stress applied to the bumps is increasing, and there is concern about the influence on connection reliability. Therefore, reducing the stress applied to the bumps is considered important for improving connection reliability. The present disclosure has been made in view of the above conventional circumstances, and an aspect of the present disclosure aims to provide an electronic component capable of reducing the stress applied to bumps and a method for manufacturing the same. Another aspect of the present disclosure aims to provide an electronic component device having excellent connection reliability and a method for manufacturing the same.

[0006] The specific means for achieving the above objectives are as follows: <1> An electronic component comprising: a first substrate having a substrate body and an electrode pad provided on at least one surface of the substrate body; a pillar having a hollow structure with both ends open, and one end of the two ends being arranged to contact the electrode pad; and a bump having a joining member arranged on the end of the pillar opposite to the side that contacts the electrode pad or within the hollow structure of the pillar. <2> The electronic component according to <1>, wherein the ratio (A / B) of the height A of the pillar to the equivalent circular diameter B of the outer circumference of the pillar when the pillar is observed from the height direction is 0.05 to 10. <3> The electronic component according to <1> or <2>, wherein the pillar is cylindrical. <4> The electronic component according to <3>, wherein the inner diameter of the pillar is 9 / 10 or less of the outer diameter of the pillar. <5> The electronic component according to <1> or <2>, wherein the pillar is rectangular. <6> The electronic component according to <5>, wherein the ratio (C / B) of the equivalent circular diameter B of the outer circumference of the pillar to the equivalent circular diameter C of the inner circumference of the pillar, when the pillar is observed from the height direction, is 9 / 10 or less. <7> The electronic component according to any one of <1> to <6>, wherein the joining member is positioned on the end of the pillar opposite to the side that contacts the electrode pad, and the height of the pillar is higher than the height of the joining member. <8> The electronic component according to any one of <1> to <7>, wherein the joining member is positioned on the end of the pillar opposite to the side that contacts the electrode pad, and a barrier layer is positioned between the pillar and the joining member. <9> The electronic component according to any one of <1> to <8>, wherein the material of the pillar includes at least one selected from the group consisting of copper, gold, silver, aluminum, platinum, titanium, and nickel. <10> The electronic component according to any one of <1> to <9>, wherein the material of the joining member is solder, gold, silver, or copper. <11> The electronic component according to any one of <1> to <6>, wherein the joining member is arranged within the hollow structure of the pillar, and a part of the joining member is joined to the pillar. <12> The electronic component according to <11>, wherein the joining member is a solder ball.<13> A method for manufacturing an electronic component according to any one of <1> to <12>, comprising: preparing a first substrate having a substrate body and an electrode pad provided on at least one surface of the substrate body; forming a resist layer on the surface of the substrate body on which the electrode pad is provided, having an opening corresponding to the shape of a pillar having a hollow structure with both ends open, and one of the ends being arranged to contact the electrode pad; forming the pillar within the opening in the resist layer; and arranging a bonding member on the end of the pillar opposite to the end that contacts the electrode pad or within the hollow structure in the pillar. <14> An electronic component device comprising a second substrate having a circuit layer and an electronic component according to any one of <1> to <12>, wherein the circuit layer of the second substrate and the electronic component are electrically connected via at least a portion of the bumps provided on the electronic component. <15> A method for manufacturing an electronic component device, comprising heating a second substrate having a circuit layer and an electronic component described in any one of <1> to <12> to join the second substrate and the electronic component.

[0007] According to one aspect of this disclosure, an electronic component capable of reducing stress on bumps and a method for manufacturing the same can be provided. Furthermore, according to another aspect of this disclosure, an electronic component device with excellent connection reliability and a method for manufacturing the same can be provided.

[0008] This is an end view showing the electronic component 10 of the first embodiment. This is a diagram illustrating the shape of the pillar 18 when observed from the height direction. This is an end view of the first substrate 16 used in the manufacture of the electronic component 10. This is an end view illustrating the manufacturing method of the electronic component 10. This is an end view illustrating the manufacturing method of the electronic component 10. This is an end view illustrating the manufacturing method of the electronic component 10. This is an end view illustrating the manufacturing method of the electronic component 10. This is an end view showing the electronic component 40 of the second embodiment. This is an end view illustrating the manufacturing method of the electronic component 40. This is an end view illustrating the manufacturing method of the electronic component 40. This is an end view illustrating the manufacturing method of the electronic component 40. This is an end view showing the electronic component device 50. This is an end view showing the electronic component device 50, in which the entire hollow structure of the pillar 18 is filled with solder 21. This is an end view showing the electronic component device 50, in which a part of the hollow structure of the pillar 18 is filled with solder 21. This is an end view illustrating the manufacturing method of the electronic component device 50.

[0009] The embodiments of this disclosure are described in detail below. However, this disclosure is not limited to the embodiments described below. In the embodiments described below, the components (including elemental steps, etc.) are not essential unless otherwise specified. The same applies to numerical values ​​and their ranges, and do not limit this disclosure.

[0010] In this disclosure, the term "process" includes not only processes that are independent of other processes, but also processes that are not clearly distinguishable from other processes, provided that their purpose is achieved. In this disclosure, numerical ranges indicated using "~" include the numbers before and after "~" as the minimum and maximum values, respectively. In numerical ranges described in stages in this disclosure, the upper or lower limit of one numerical range may be replaced with the upper or lower limit of another numerical range described in stages. Also, in numerical ranges described in this disclosure, the upper or lower limit of that numerical range may be replaced with the values ​​shown in the examples. In this disclosure, the terms "layer" or "film" include cases where the layer or film is formed over the entire region when the region in which it exists is observed, as well as cases where it is formed only on a part of the region. In this disclosure, the thickness of a layer or film is given as the arithmetic mean value obtained by measuring the thickness of five points on the layer or film in question. The thickness of a layer or film can be measured using a micrometer or the like. In this disclosure, if the thickness of a layer or film can be measured directly, it shall be measured using a micrometer. On the other hand, when measuring the thickness of a single layer or the total thickness of multiple layers, the measurement may be performed by observing the cross-section of the object to be measured using an electron microscope.

[0011] <Electronic component and method for manufacturing the same> The electronic component of the present disclosure comprises a first substrate having a substrate body and an electrode pad provided on at least one surface of the substrate body; a pillar having a hollow structure with open ends and one of the ends being arranged to contact the electrode pad; and a bump having a joining member disposed on the end of the pillar opposite to the side that contacts the electrode pad or within the hollow structure of the pillar. As a result of diligent research, the inventors have found that by having a pillar with a hollow structure as the bump provided on the electrode pad, it is possible to reduce the stress on the bump, and have completed the present invention.

[0012] The electronic components and their manufacturing methods described herein will be described in detail below with reference to the drawings. Note that the sizes of the components in each drawing are conceptual, and the relative sizes of the components are not limited thereto. Furthermore, components having substantially the same function are given the same reference numerals throughout all drawings, and redundant explanations may be omitted.

[0013] (First Embodiment) In the electronic component of the first embodiment, a bonding member is arranged on the end of the pillar opposite to the end that contacts the electrode pad. Figure 1 is an end view showing the electronic component 10 of the first embodiment. The electronic component 10 comprises a first substrate 16 having a substrate body 12 and an electrode pad 14 provided on one surface of the substrate body 12.

[0014] As the substrate body 12, elemental semiconductors composed of the same type of element such as silicon and germanium, compound semiconductors such as gallium arsenide and indium phosphide can be used. Examples include the chip (die) itself that is not packaged with resin, etc., and semiconductor packages called CSP, BGA, etc. that are packaged with resin, etc. Furthermore, examples include wiring boards on which conductive wiring including connecting electrodes is formed on an organic substrate containing a fiber base material such as FR4 and FR5, a build-up type organic substrate that does not contain a fiber base material, an organic film such as polyimide and polyester, or a substrate containing an inorganic material such as alumina, glass, or silicon.

[0015] If the substrate body 12 is a semiconductor, the electrode pads 14 are formed from aluminum, copper, nickel, gold, etc. If the substrate body 12 is a wiring board, the electrode pads 14 are formed from copper, gold, aluminum, nickel, etc. If the substrate body 12 is a wiring board, the side of the substrate body 12 on which the electrode pads 14 are provided may have wiring patterns that are electrically connected to each electrode pad 14. Also, if the substrate body 12 is a wiring board, various elements such as semiconductor elements, active elements such as transistors, diodes, and thyristors, and passive elements such as capacitors, resistors, resistor arrays, coils, and switches may be arranged on the side of the substrate body 12 on which the electrode pads 14 are provided, the side opposite to the side of the substrate body 12 on which the electrode pads 14 are provided, or within the substrate body 12.

[0016] The spacing between each electrode pad 14 is not particularly limited, but is preferably 10 μm to 100 μm, more preferably 20 μm to 70 μm, and even more preferably 30 μm to 50 μm.

[0017] A pillar 18 is positioned on the electrode pad 14. The pillar 18 has a hollow structure with openings at both ends, and is positioned so that one of the ends is in contact with the electrode pad 14.

[0018] The height A of the pillar 18 is not particularly limited, but is preferably 20 μm or less, more preferably 0.1 μm to 20 μm, and even more preferably 2 μm to 10 μm. Setting the height A of the pillar 18 to 20 μm or less tends to suppress the overall height of the electronic component 10.

[0019] The shape of the pillar 18 is not particularly limited, and is not limited as long as it has a hollow structure with openings at both ends. Examples of pillar shapes for the pillar 18 include cylindrical and rectangular tube shapes, and a cylindrical shape is preferred from the viewpoint of reducing stress on the pillar.

[0020] Figure 2 is a diagram illustrating the shape of pillar 18 when observed from the height direction. However, the shape of pillar 18 when observed from the height direction is not limited to the shape shown in Figure 2. If pillar 18 is cylindrical, when observed from the height direction, both the outer and inner circumferences may be circular, as shown in Figure 2(A), or the outer circumference may be circular and the inner circumference may be a polygon such as a square. If pillar 18 is rectangular, when observed from the height direction, both the outer and inner circumferences may be rectangular, as shown in Figure 2(B), or the outer circumference may be rectangular and the inner circumference circular, as shown in Figure 2(C). Furthermore, if pillar 18 is rectangular, when observed from the height direction, the outer circumference may be triangular, as shown in Figure 2(D), or the outer circumference may be hexagonal, as shown in Figure 2(E).

[0021] The ratio (A / B) of the height A of the pillar 18 to the equivalent circular diameter B of the outer circumference of the pillar 18 when the pillar 18 is observed from the height direction is preferably 0.05 to 10, more preferably 0.1 to 8, more preferably 0.2 to 5, and even more preferably 0.3 to 1, from the viewpoint of reducing the stress on the pillar.

[0022] When the pillar 18 is cylindrical as shown in Figure 2(A), the inner diameter of the pillar 18 is preferably 9 / 10 or less of the outer diameter of the pillar 18, more preferably 2 / 3 or less, and even more preferably 3 / 5 or less, from the viewpoint of reducing stress on the pillar. The inner diameter of the pillar 18 is preferably 1 / 3 or more of the outer diameter of the pillar 18, and more preferably 2 / 5 or more. The inner diameter of the pillar 18 is preferably 1 / 3 to 9 / 10 of the outer diameter of the pillar 18.

[0023] When the pillar 18 is rectangular, the ratio (C / B) of the equivalent circular diameter B of the outer circumference of the pillar 18 and the equivalent circular diameter C of the inner circumference of the pillar 18, when observed from the height direction, is preferably 9 / 10 or less, more preferably 2 / 3 or less, and even more preferably 3 / 5 or less, from the viewpoint of reducing the stress on the pillar. The ratio (C / B) is preferably 1 / 3 or more, more preferably 2 / 5 or more. The ratio (C / B) is preferably between 1 / 3 and 9 / 10.

[0024] In this disclosure, "equivalent circle diameter" means the diameter of a circle having an area equal to the area of ​​the outer or inner circumference of the pillar 18 when the pillar 18 is observed from the height direction.

[0025] The material of the pillar 18 is not particularly limited as long as it is a conductive material, but it is preferable that it includes at least one selected from the group consisting of copper, gold, silver, aluminum, platinum, titanium, and nickel. The pillar 18 may be composed of one type of material or of two or more types of materials. If the pillar 18 is composed of two or more types of materials, the pillar 18 may be composed of one type of alloy or of two or more metal layers of different types. If the pillar 18 is composed of two or more metal layers of different types, the metal layer in contact with the electrode pad 14 among the two or more metal layers may be the seed layer described later.

[0026] In the electronic component 10, a solder layer 20 is provided as a bonding member on the end of the pillar 18 opposite to the end that contacts the electrode pad 14. The pillar 18 and the solder layer 20 as a bonding member constitute the bump 22 in the electronic component 10. In addition to solder, the bonding member material may be gold, silver, or copper. When these materials are used as bonding members, instead of the solder layer 20, a gold layer, silver layer, or copper layer is provided as a bonding member on the end of the pillar 18 opposite to the end that contacts the electrode pad 14. Furthermore, examples of solder components that make up the solder layer 20, which is the bonding member, include lead-containing alloys, tin-Cu alloys, Sn-silver alloys, and Sn-Ag-Cu alloys.

[0027] The height of the joining member (thickness of the solder layer 20 in Figure 1) provided on the end of the pillar 18 opposite to the end in contact with the electrode pad 14 is not particularly limited. From the viewpoint of ensuring the bonding strength of the electronic component 10, the height of the joining member (thickness of the solder layer 20 in Figure 1) is preferably 5 μm or more. Furthermore, from the viewpoint of suppressing the occurrence of electrical short circuits between adjacent electrodes, the height of the joining member (thickness of the solder layer 20 in Figure 1) is preferably 50 μm or less.

[0028] To prevent the components of the solder layer 20 from diffusing into the pillar 18, a barrier layer (not shown) may be provided between the pillar 18 and the solder layer 20 as a joining member. Examples of materials for the barrier layer include nickel, titanium, and tantalum. The thickness of the barrier layer is not particularly limited and should be sufficient to allow the barrier layer to perform its function.

[0029] In Figure 1, it is preferable that the height A of the pillar 18 is greater than the height of the joining member (thickness of the solder layer 20 in Figure 1) from the viewpoint of suppressing the occurrence of electrical short circuits between adjacent electrodes. The ratio (D / A) of the height A of the pillar 18 to the height D of the joining member (thickness of the solder layer 20 in Figure 1) is preferably 1 / 3 to 2 / 3.

[0030] The method for manufacturing the electronic component 10 is not particularly limited. For example, the electronic component 10 can be obtained by preparing a first substrate 16 and forming a bump 22 on the electrode pad 14 of the first substrate 16 by a plating method, having a pillar 18 and a solder layer 20 as a bonding member in that order. More specifically, the electronic component 10 may be manufactured by a method for manufacturing electronic components that includes: preparing a first substrate having a substrate body and an electrode pad provided on at least one surface of the substrate body; forming a resist layer on the surface of the substrate body on which the electrode pad is provided, having a hollow structure with open ends at both ends and an opening corresponding to the shape of a pillar, with one of the ends of the pillar being arranged to contact the electrode pad; forming the pillar within the opening in the resist layer; and arranging a bonding member on the end of the pillar opposite to the end that contacts the electrode pad. In this embodiment, "forming a pillar within an opening" includes forming a metal layer constituting at least a part of the pillar within the opening.

[0031] Figure 3 is an end view of a first substrate 16 used in the manufacture of an electronic component 10, having a substrate body 12 and electrode pads 14 provided on at least one surface of the substrate body 12. The method for preparing the first substrate 16 is not particularly limited. For example, the first substrate 16 can be obtained by forming the electrode pads 14 on one surface of the substrate body 12 by a standard method.

[0032] Next, as shown in Figure 4, a seed layer 24 is formed on the side of the substrate body 12 where the electrode pads 14 are provided, so as to cover the electrode pads 14. The seed layer 24 can be formed, for example, by sputtering or electroless plating. The material of the seed layer 24 is not particularly limited and may be, for example, copper, titanium, chromium, tungsten, or an alloy of any combination of these metals. The thickness of the seed layer 24 is not particularly limited and may be, for example, 0.01 μm to 0.3 μm.

[0033] Next, as shown in Figure 5, a resist layer 26 is formed on the seed layer 24 (i.e., the side of the substrate body 12 on which the electrode pads 14 are provided). Specifically, for example, a dry film resist made of a photosensitive resin is laminated onto the seed layer 24 as the resist layer 26. Then, the resist layer 26 is patterned by exposure and development to form a plurality of openings 28 in the resist layer 26. The openings 28 are formed so that the seed layer 24 is exposed. The openings 28 are formed at the positions on the electrode pads 14 where the pillars 18 are formed. In order to form pillars 18 that have a hollow structure with openings at both ends, the openings 28 formed in the resist layer 26 are shaped to correspond to the shape of the pillars 18 when viewed from the height direction, as shown in Figure 2, when the resist layer 26 is viewed from above. The thickness of the resist layer 26 is greater than the height of the bumps 22 to be formed, for example, about 10 μm to 100 μm.

[0034] Next, as shown in Figure 6, a metal layer 30 is formed on the upper surface of the seed layer 24 exposed from the opening 28 by an electroplating method that utilizes the seed layer 24 as a plating power supply path. Then, a solder layer 20 constituting the joining member is formed on the metal layer 30 by an electroplating method that utilizes the seed layer 24 as a plating power supply path.

[0035] Next, as shown in Figure 7, the resist layer 26 is removed. The resist layer 26 can be removed using, for example, a stripping solution containing sodium hydroxide.

[0036] Next, as shown in Figure 8, the portion of the seed layer 24 exposed from the solder layer 20 is removed using an etching solution. As the etching solution, for example, an aqueous solution mainly composed of hydrogen peroxide and sulfuric acid, an aqueous solution of sodium persulfate, an aqueous solution of ammonium persulfate, or nitric acid can be used. Next, if necessary, the solder layer 20 is melted by reflow or the like, and then solidified. In this way, a bump 22 according to the first embodiment is formed on the electrode pad 14, consisting of a pillar 18 having the seed layer 24 and the metal layer 30 in that order, and the solder layer 20.

[0037] (Second Embodiment) In the electronic component of the second embodiment, a bonding member is arranged within the hollow structure of the pillar. Examples of bonding members arranged within the hollow structure include solder balls, solder paste, silver paste, copper paste, etc. Among these, solder balls are preferred because they are easy to arrange within the hollow structure of the pillar. Figure 9 is an end view showing the electronic component 40 of the second embodiment. The electronic component 40 comprises a first substrate 16 having a substrate body 12 and an electrode pad 14 provided on one surface of the substrate body 12. A pillar 18 is arranged on the electrode pad 14. The pillar 18 has a hollow structure with openings at both ends, and is arranged so that one end of the two ends is in contact with the electrode pad 14. Details of the first substrate 16 and pillar 18 constituting the electronic component 40 are the same as those of the first substrate 16 and pillar 18 constituting the electronic component 10.

[0038] A solder ball 42 is placed within the hollow structure of the pillar 18 as a joining member. The pillar 18 and the ball 42 constitute the bump 22 of the electronic component 40. The diameter of the solder ball 42 is not particularly limited; it should be a diameter such that the solder ball 42 is housed within the hollow structure of the pillar 18 and a sufficient amount of solder is secured for soldering. The diameter of the solder ball 42 is preferably 1 / 10 to 1 / 1 (same as the equivalent diameter C) of the inner circumference of the pillar 18, and more preferably 1 / 5 to 1 / 2. Specifically, the diameter of the solder ball 42 is preferably 5 μm to 65 μm, and more preferably 10 μm to 50 μm. The number of solder balls 42 placed within the hollow structure may be one or two or more. Examples of the components of the solder that make up the solder ball 42, which is a joining member, include lead-containing alloys, tin-Cu alloys, Sn-silver alloys, and Sn-Ag-Cu alloys.

[0039] A portion of the solder ball 42, which serves as the joining member, is positioned within the hollow structure of the pillar 18 and is joined to the pillar 18 (more specifically, to the inner wall of the pillar 18). By joining a portion of the solder ball 42 to the pillar 18, the solder ball 42 is prevented from falling or moving to an unexpected position, thereby suppressing the occurrence of electrical short circuits between adjacent electrodes. When we say that "a portion" of the joining member is joined to the pillar 18, using the solder ball 42 as an example of the joining member, it means that a portion of the surface of the solder ball 42 has melted and joined to a portion of the inner wall of the pillar 18.

[0040] The method for manufacturing the electronic component 40 is not particularly limited. For example, the electronic component 40 can be obtained by preparing a first substrate 16, forming a pillar 18 on an electrode pad 14 on the first substrate 16 by a plating method, and then arranging a bonding member within the hollow structure of the pillar 18. More specifically, the electronic component 40 may be manufactured by a method for manufacturing electronic components comprising: preparing a first substrate having a substrate body and an electrode pad provided on at least one surface of the substrate body; forming a resist layer on the surface of the substrate body on which the electrode pad is provided, having a hollow structure with open ends at both ends and an opening corresponding to the shape of a pillar, with one of the ends in contact with the electrode pad; forming the pillar within the opening in the resist layer; and arranging a bonding member within the hollow structure of the pillar. In this embodiment, "forming a pillar within an opening" includes forming a metal layer constituting at least a part of the pillar within the opening.

[0041] In the manufacturing of the electronic component 40, a resist layer 26 having multiple openings 28 is formed on the seed layer 24 in the same manner as the manufacturing process of the electronic component 10 shown in Figures 3 to 5. Next, as shown in Figure 10, a metal layer 30 is formed on the upper surface of the seed layer 24 exposed through the openings 28 by an electroplating method that utilizes the seed layer 24 as a plating power supply path.

[0042] Next, as shown in Figure 11, the resist layer 26 is removed. The resist layer 26 can be removed using, for example, a stripping solution containing sodium hydroxide. Furthermore, the portion of the seed layer 24 exposed from the metal layer 30 is removed using an etching solution. As the etching solution, for example, an aqueous solution mainly composed of hydrogen peroxide and sulfuric acid, an aqueous solution of sodium persulfate, an aqueous solution of ammonium persulfate, or nitric acid can be used. This forms a pillar 18 having the seed layer 24 and the metal layer 30 in that order.

[0043] Next, as shown in FIG. 12, a solder ball 42 as a joining member is disposed in the hollow structure in the pillar 18. The method of disposing the solder ball 42 in the hollow structure in the pillar 18 is not particularly limited, and a ball mounter device may be used, or a method of dropping and disposing the solder ball with a brush or the like using an open metal mask, or a method of disposing the ball in the hollow structure using a thin wire or pin coated with an adhesive at the tip may be used. Next, heat treatment is performed at a temperature such that a part of the solder ball 42 melts, and a part of the solder ball 42 may be joined to the inner wall of the pillar 18. In this way, a bump 22 of the electronic component 40 including the pillar 18 and the solder ball 42 is formed on the electrode pad 14.

[0044] <Electronic Component Device and Method for Manufacturing the Same> The electronic component device of the present disclosure includes a second substrate having a circuit layer and the electronic component of the present disclosure, and the circuit layer of the second substrate and the electronic component are electrically connected through at least a part of the bumps included in the electronic component. In the present disclosure, the phrase "electrically connected through at least a part of the bumps" between the circuit layer and the electronic component means that the circuit layer and the electronic component are electrically connected through all or a part of the plurality of bumps included in the electronic component. Even if some of the plurality of bumps included in the electronic component do not contribute to the electrical connection between the electronic component and the circuit layer, the bumps that do not contribute to the electrical connection may function as reinforcing pillars.

[0045] Hereinafter, the electronic component apparatus and its manufacturing method described herein will be described in detail with reference to the drawings. Figure 13 is an end view showing the electronic component apparatus 50. The electronic component apparatus 50 comprises a second substrate 54 having a circuit layer 52 and an electronic component 10. In the electronic component apparatus 50, the circuit layer 52 of the second substrate 54 and the electronic component 10 are electrically connected via at least a portion of the bumps 22 provided on the electronic component 10. At the locations in the electronic component apparatus 50 where the circuit layer 52 and the bumps 22 are electrically connected, solder 21 formed by the molten solder layer 20 constituting the bumps 22 exists between the circuit layer 52 and the pillars 18 constituting the bumps 22. The solder 21 may exist between the circuit layer 52 and the pillars 18 after the solder layer 20 has molten, as shown in Figure 13. Alternatively, the solder 21 may exist between the circuit layer 52 and the pillars 18 after the solder layer 20 has molten, and may also fill the hollow structure of the pillars 18. When the solder layer 20 melts and fills the hollow structure of the pillar 18, the entire hollow structure may be filled with solder 21 (Figure 14), or only a part of the hollow structure may be filled with solder 21 (Figure 15).

[0046] Examples of the second substrate 54 having the circuit layer 52 include a lead frame, a pre-wired tape carrier, a rigid wiring board, a flexible wiring board, glass, a silicon wafer, and the like. The circuit layer 52 can be made of, for example, copper, aluminum, and the like.

[0047] The method for manufacturing the electronic component device 50 is not particularly limited. Below, a case in which an electronic component device 50 is obtained by joining an electronic component 10 and a second substrate 54 will be described with reference to the drawings. As shown in Figure 16, the electronic component 10 and the second substrate 54 are arranged so that the side of the electronic component 10 on which the bumps 22 are provided faces the side of the second substrate 54 on which the circuit layer 52 is provided, and the bumps 22 and the circuit layer 52 are aligned. Next, as shown in Figure 17, the bumps 22 and the circuit layer 52 are brought into contact. The alignment of the bumps 22 and the circuit layer 52, and the contact between the bumps 22 and the circuit layer 52 can be performed using a known surface mount machine, flip-chip bonder, etc.

[0048] Next, while maintaining the state where the bump 22 and the circuit layer 52 are in contact, the electronic component 10 and the second substrate 54 are heated to melt the solder layer 20 constituting the bump 22, and the electronic component 10 and the second substrate 54 are joined. The heating method is not particularly limited, and a reflow furnace, a hot plate, an oven, etc. can be used. The heating temperature is preferably the temperature at which the solder layer 20 melts, more preferably 220 °C or higher, and even more preferably 230 °C or higher.

[0049] When melting the solder layer 20 by heating, pressure may be applied in a state where the solder layer 20 and the circuit layer 52 are in contact. As the pressure application conditions, the load applied to one electronic component 10 may be set to be about 5 N to 200 N. Through the above steps, the electronic component device of the present disclosure can be manufactured.

[0050] Hereinafter, the present disclosure will be specifically described with reference to examples, but the scope of the present disclosure is not limited to these examples.

[0051] The stress applied to the pillar was simulated using COMSOL (software name). The simulation conditions were as shown in Table 1.

[0052]

[0053] The layer structure was in the order of chip / pillar / solder / substrate. The pillar of the example was cylindrical as shown in Fig. 2(A), and a hollow structure with an inner diameter of 0.011 mm was provided. The pillar of the comparative example was cylindrical. As a result of the simulation, the stress applied to the pillar of the example having a hollow structure was 12.6 MPa. The stress applied to the cylindrical pillar of the comparative example was 13.5 MPa. From the above, it was found that the bump having the pillar of the example having a hollow structure can reduce stress as compared with the bump having the cylindrical pillar of the comparative example.

[0054] All documents, patent applications, and technical standards described in this specification are incorporated herein by reference to the same extent as if each individual document, patent application, and technical standard were specifically and individually stated to be incorporated by reference.

Claims

1. An electronic component comprising: a first substrate having a substrate body and an electrode pad provided on at least one surface of the substrate body; a pillar having a hollow structure with open ends, and one of the ends being positioned to contact the electrode pad; and a bump having a bonding member positioned on the end of the pillar opposite to the side in contact with the electrode pad or within the hollow structure of the pillar.

2. The electronic component according to claim 1, wherein the ratio (A / B) of the height A of the pillar to the equivalent circular diameter B of the outer circumference of the pillar when the pillar is observed from the height direction is 0.05 to 10.

3. The electronic component according to claim 1, wherein the pillar is cylindrical.

4. The electronic component according to claim 3, wherein the inner diameter of the pillar is 9 / 10 or less of the outer diameter of the pillar.

5. The electronic component according to claim 1, wherein the pillar is rectangular in shape.

6. The electronic component according to claim 5, wherein the ratio (C / B) of the equivalent circular diameter B of the outer circumference of the pillar to the equivalent circular diameter C of the inner circumference of the pillar, when the pillar is observed from the height direction, is 9 / 10 or less.

7. The electronic component according to claim 1, wherein the joining member is positioned on the end of the pillar opposite to the end that contacts the electrode pad, and the height of the pillar is greater than the height of the joining member.

8. The electronic component according to claim 1, wherein the joining member is positioned on the end of the pillar opposite to the end that contacts the electrode pad, and a barrier layer is positioned between the pillar and the joining member.

9. The electronic component according to claim 1, wherein the material of the pillar includes at least one selected from the group consisting of copper, gold, silver, aluminum, platinum, titanium, and nickel.

10. The electronic component according to claim 1, wherein the material of the joining member is solder, gold, silver, or copper.

11. The electronic component according to claim 1, wherein the joining member is arranged within the hollow structure of the pillar, and a part of the joining member is joined to the pillar.

12. The electronic component according to claim 11, wherein the joining member is a solder ball.

13. A method for manufacturing an electronic component according to claim 1, comprising: preparing a first substrate having a substrate body and an electrode pad provided on at least one surface of the substrate body; forming a resist layer on the surface of the substrate body on which the electrode pad is provided, having an opening corresponding to the shape of a pillar having a hollow structure with open ends at both ends, and one of the ends being arranged to contact the electrode pad; forming the pillar within the opening in the resist layer; and arranging a bonding member on the end of the pillar opposite to the end that contacts the electrode pad or within the hollow structure in the pillar.

14. An electronic component device comprising a second substrate having a circuit layer and an electronic component according to claim 1, wherein the circuit layer of the second substrate and the electronic component are electrically connected via at least a portion of the bumps provided on the electronic component.

15. A method for manufacturing an electronic component device, comprising heating a second substrate having a circuit layer and an electronic component according to claim 1 to bond the second substrate and the electronic component.

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