Display apparatus and electronic device

The integration of a silicon compound insulating layer with low dielectric constant members addresses drive current leakage in display devices, enhancing adhesion and stability of organic layers to prevent light emission anomalies.

WO2026105455A1PCT designated stage Publication Date: 2026-05-21SONY SEMICON SOLUTIONS CORP
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
SONY SEMICON SOLUTIONS CORP
Filing Date
2025-09-22
Publication Date
2026-05-21

AI Technical Summary

Technical Problem

Existing display devices experience drive current leakage between adjacent light-emitting elements and between the anode and cathode, leading to potential light emission issues due to the formation of insulating layers that affect the adhesion of organic material-containing layers.

Method used

Incorporating an insulating layer containing a silicon compound with a low dielectric constant member between adjacent light-emitting elements, and arranging low-dielectric-constant structures around the electrodes to mitigate electric fields and enhance adhesion.

Benefits of technology

Effectively suppresses drive current leakage and maintains the integrity of the organic material-containing layer, ensuring stable light emission without adhesion deterioration.

✦ Generated by Eureka AI based on patent content.

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Abstract

Provided is a display apparatus that can suppress both leakage of a drive current between adjacent light-emitting elements and leakage of a drive current between an anode and a cathode. The display apparatus comprises: an organic substance-containing layer that is connected between adjacent light-emitting elements and includes an organic light-emitting layer; a plurality of first electrodes that are provided for each of the light-emitting elements on one surface side of the organic substance-containing layer; a second electrode that is provided on the other surface side of the organic substance-containing layer; an insulating layer that is provided between adjacent light-emitting elements, covers the peripheral edge portion of each of the first electrodes, and includes a silicon compound; and a low dielectric constant member that is provided between the peripheral edge portion of each of the first electrodes and the insulating layer and has a dielectric constant that is lower than the dielectric constant of the insulating layer.
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Description

Display devices and electronic equipment

[0001] This disclosure relates to a display device and an electronic device equipped therewith.

[0002] In recent years, a display device has been known in which an organic material-containing layer, including an emissive layer, is connected between adjacent light-emitting elements in the in-plane direction and shared by multiple light-emitting elements. In a display device with such a configuration, leakage of drive current is likely to occur between adjacent light-emitting elements.

[0003] Therefore, techniques have been proposed to suppress the leakage of drive current between adjacent light-emitting elements. For example, Patent Document 1 discloses that, in order to suppress the leakage of drive current as described above, an insulating layer for separating elements is constructed by a bulk layer containing silicon nitride and an interface layer containing silicon oxide.

[0004] International Publication No. 2020 / 111202

[0005] However, in the technology described in Patent Document 1, a step is formed on the anode due to the opening of the insulating layer for separating elements, which worsens the adhesion of the organic material-containing layer, including the light-emitting layer, near the opening of the insulating layer. As a result, the electric field concentrates near the opening of the insulating layer when the light-emitting element is driven, and there is a risk that drive current leakage will occur between the anode and the cathode. If such drive current leakage occurs, there is a risk that the light-emitting layer near the opening of the insulating layer will emit light.

[0006] The object of this disclosure is to provide a display device and an electronic device equipped therewith that can suppress both drive current leakage between adjacent light-emitting elements and drive current leakage between the anode and the cathode.

[0007] To solve the above-mentioned problems, a display device according to a first aspect of the present disclosure comprises: an organic material-containing layer connected between adjacent light-emitting elements and including an organic light-emitting layer; a plurality of first electrodes provided on one side of the organic material-containing layer for each light-emitting element; a second electrode provided on the other side of the organic material-containing layer; an insulating layer containing a silicon compound provided between adjacent light-emitting elements and covering the peripheral edge of each first electrode; and a low dielectric constant member provided between the peripheral edge of each first electrode and the insulating layer, having a dielectric constant lower than that of the insulating layer.

[0008] A display device according to a second aspect of the present disclosure comprises: an organic material-containing layer connected between adjacent light-emitting elements, including an organic light-emitting layer; a plurality of first electrodes provided on one side of the organic material-containing layer for each light-emitting element; a second electrode provided on the other side of the organic material-containing layer; and an insulating layer containing a silicon compound provided between adjacent light-emitting elements and covering the periphery of each first electrode, wherein the insulating layer includes a plurality of low-dielectric-constant structures having a dielectric constant lower than the dielectric constant of the insulating layer, and the plurality of low-dielectric-constant structures are arranged in the in-plane direction of the first electrode in the portion covering the periphery of each first electrode.

[0009] Figure 1 is a plan view of a display device according to one embodiment. Figure 2 is a plan view showing an enlarged portion of the display area. Figure 3 is a cross-sectional view along line III-III in Figure 2. Figure 4A is a cross-sectional view of an OLED layer having a single-layer light-emitting unit. Figure 4B is a cross-sectional view of an OLED layer having two-layer light-emitting units. Figure 5 is an enlarged cross-sectional view near the light-emitting element. Figure 6 is an enlarged plan view near the light-emitting element. Figures 7A, 7B, 7C, and 7D are manufacturing process diagrams of a display device according to one embodiment, respectively. Figures 8A, 8B, and 8C are manufacturing process diagrams of a display device according to one embodiment, respectively. Figure 9 is an enlarged cross-sectional view near the light-emitting element in a modified example. Figure 10 is an enlarged cross-sectional view near the light-emitting element in a modified example. Figure 11 is an enlarged cross-sectional view near the light-emitting element in a modified example. Figure 12 is an enlarged cross-sectional view near the light-emitting element in a modified example. Figures 13A and 13B are enlarged plan views near the light-emitting element in a modified example, respectively. Figure 14 is an enlarged cross-sectional view near the light-emitting element in a modified example. Figure 15 is an enlarged cross-sectional view near the light-emitting element in a modified example. Figure 16 is an enlarged cross-sectional view near the light-emitting element in a modified example. Figure 17 is an enlarged cross-sectional view of the vicinity of the light-emitting element in the modified example. Figure 18 is a cross-sectional view of the display device according to the modified example. Figure 19A is a diagram of analysis model 1. Figure 19B is a diagram of analysis model 2. Figure 20 is a graph showing the results of simulations 1 and 2. Figures 21A, 21B, and 21C are conceptual diagrams to explain the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN'' passing through the center of the wavelength selection part, respectively. Figure 22 is a conceptual diagram to explain the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN'' passing through the center of the wavelength selection part. Figures 23A and 23B are conceptual diagrams illustrating the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN'' passing through the center of the wavelength-selecting part, respectively. Figure 24 is a conceptual diagram illustrating the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN'' passing through the center of the wavelength-selecting part. Figure 25A is a schematic cross-sectional view illustrating a first example of the resonator structure. Figure 25B is a schematic cross-sectional view illustrating a second example of the resonator structure.Figure 26A is a schematic cross-sectional view illustrating a third example of a resonator structure. Figure 26B is a schematic cross-sectional view illustrating a fourth example of a resonator structure. Figure 27A is a schematic cross-sectional view illustrating a fifth example of a resonator structure. Figure 27B is a schematic cross-sectional view illustrating a sixth example of a resonator structure. Figure 28 is a schematic cross-sectional view illustrating a seventh example of a resonator structure. Figure 29A is a front view of a digital still camera. Figure 29B is a rear view of a digital still camera. Figure 30 is a perspective view of a head-mounted display. Figure 31 is a perspective view of a television system. Figure 32 is a perspective view of a see-through head-mounted display. Figure 33 is a perspective view of a smartphone. Figure 34A is a diagram showing the interior of a vehicle from the rear to the front. Figure 34B is a diagram showing the interior of a vehicle from the diagonal rear to the diagonal front.

[0010] The embodiments of this disclosure will be described in the following order: 1. General description of the display device and electronic device related to this disclosure 2. One embodiment (example of a display device) 3. Modifications 4. Simulation 5. Relationship of normals passing through the centers of the light-emitting part, lens member, and wavelength-selecting part 6. Example of a resonator structure 7. Application example (example of an electronic device)

[0011] The embodiments described below are preferred examples of the present disclosure, and the content of the present disclosure is not limited to these embodiments. In all the figures of the following embodiments, the same or corresponding parts are denoted by the same reference numerals. In addition, in order to prevent the illustration from becoming complicated, only some components may be denoted by reference numerals, or the illustration may be simplified, enlarged, or reduced.

[0012] <1. General Description of Display Devices and Electronic Devices Related to the Disclosure> In the display device according to the first aspect of the Disclosure and the display device according to the second aspect of the Disclosure, the low dielectric constant member includes, for example, at least one selected from the group consisting of carbon-containing silicon oxide, silane-based materials and porous materials.

[0013] In the display device according to the first aspect of this disclosure and the display device according to the second aspect of this disclosure, the silicon compound preferably includes a silicon nitride-based material. In this case, the insulating layer is likely to have a positive fixed charge. The silicon nitride-based material includes, for example, at least one selected from the group consisting of silicon nitride, silicon carbonitride, and silicon oxynitride.

[0014] In the display device according to the first aspect of this disclosure and the display device according to the second aspect of this disclosure, the insulating layer is preferably positively charged from the viewpoint of suppressing leakage of drive current between adjacent light-emitting elements.

[0015] In the display device according to the first aspect of this disclosure and the display device according to the second aspect of this disclosure, the insulating layer preferably includes an insulating layer body containing a silicon compound and a surface layer containing silicon oxide, provided between the insulating layer body and the organic material-containing layer, from the viewpoint of suppressing leakage of drive current between adjacent light-emitting elements.

[0016] In a display device according to a first aspect of this disclosure, it is preferable to further include an intermediate layer provided between the first electrode and the low dielectric constant member, the intermediate layer containing silicon oxide. This suppresses the decrease in the fixed charge of the insulating layer and allows the insulating layer to maintain a positively charged state.

[0017] In a display device according to a first aspect of the present disclosure, the low dielectric constant member includes, for example, a low dielectric constant layer having a dielectric constant lower than that of the insulating layer.

[0018] When a low-dielectric-constant member includes a low-dielectric-constant layer, it is preferable that the low-dielectric-constant layer has an opening inward from the periphery of the first electrode in a plan view, and that the insulating layer covers the side surface of the opening in the low-dielectric-constant layer. This makes it possible to suppress the deterioration of the low-dielectric-constant layer.

[0019] When the low dielectric constant member includes a low dielectric constant layer, it is preferable that the insulating layer has a first opening located inward from the periphery of the first electrode in a plan view, and the low dielectric constant layer has a second opening located inward from the first opening in a plan view, and that the first and second openings constitute a stepped structure. This makes it possible to suppress deterioration of the adhesion properties of the organic material-containing layer near the first opening of the insulating layer.

[0020] When the low dielectric constant member includes a low dielectric constant layer, it is preferable that an intermediate layer containing silicon oxide is provided between the first electrode and the low dielectric constant layer, the insulating layer has a first opening inward from the periphery of the first electrode in a plan view, the low dielectric constant layer has a second opening inward from the first opening in a plan view, and the intermediate layer has a third opening inward from the second opening in a plan view, and the first, second, and third openings constitute a stepped structure. This makes it possible to suppress deterioration of the adhesion properties of the organic matter-containing layer near the first opening of the insulating layer.

[0021] The low-dielectric-constant member includes, for example, a plurality of low-dielectric-constant structures arranged in the in-plane direction of the first electrode and having a dielectric constant lower than that of the insulating layer. The plurality of low-dielectric-constant structures have, for example, a dot-like or concentric shape in a plan view.

[0022] When a low-dielectric-constant member includes multiple low-dielectric-constant structures, it is preferable to further include an intermediate layer containing silicon oxide, and at least a portion of the multiple low-dielectric-constant structures are provided within the intermediate layer. This reduces the step difference between the insulating layer covering the periphery of the first electrode and the first electrode compared to the case where the multiple low-dielectric-constant structures are provided on the intermediate layer. Therefore, deterioration of the adhesion properties of the organic-containing layer near the opening of the insulating layer can be suppressed.

[0023] When a low-dielectric-constant member includes multiple low-dielectric-constant structures, it is preferable that the insulating layer has an opening inward from the periphery of the first electrode in a plan view, and that some of the multiple low-dielectric-constant structures protrude outward from the opening of the insulating layer in a plan view, forming a stepped structure. This makes it possible to suppress deterioration of the adhesion properties of the organic-containing layer near the opening of the insulating layer.

[0024] In a display device according to a second aspect of the present disclosure, the insulating layer preferably has an opening inward from the periphery of the first electrode in a plan view, and a portion of the plurality of low dielectric constant structures preferably protrudes from the opening of the insulating layer in a plan view, forming a stepped structure. This makes it possible to suppress deterioration of the adhesion properties of the organic material-containing layer near the opening of the insulating layer.

[0025] In a display device according to a first aspect of this disclosure, it is preferable that the tops of the plurality of low dielectric constant structures are separated from the surface of the insulating layer that is on the side of the organic material-containing layer. This makes it possible to suppress the reduction of insulating material constituting the insulating layer, and thus suppress the deterioration of the function of the insulating layer.

[0026] The display device relating to this disclosure may be provided in an electronic device. For example, the display device relating to this disclosure may be provided in an eyewear device such as a VR (Virtual Reality) device, an MR (Mixed Reality) device, or an AR (Augmented Reality) device. The eyewear device shall also include a headset.

[0027] In this disclosure, the peripheral edge of the first electrode refers to a portion having a predetermined width extending inward from the peripheral edge of the first electrode. In this disclosure, in descriptions such as "member B is provided on member A," "on member A" indicates the relative positional relationship between member A and member B, and includes not only the state in which member B is directly located on member A without any other member in between, but also the state in which member B is located on member A with at least one other member in between.

[0028] <2 One Embodiment> [Outline Configuration of Display Device 101] Figure 1 is a plan view of a display device 101 according to one embodiment. The display device 101 has a display area RE1 and a peripheral area RE2 provided around the display area RE1. In one embodiment, the display area RE1 has a rectangular shape in plan view. However, the shape of the display area RE1 is not limited to a rectangular shape and may be a shape other than a rectangle.

[0029] In this disclosure, the first and second directions perpendicular to each other within the display surface of the display device 101 are referred to as the X-axis direction and the Y-axis direction, respectively, and the third direction perpendicular to the display surface of the display device 101 is referred to as the Z-axis direction. In one embodiment, an example will be described in which the X-axis direction is the horizontal direction of the display surface and the Y-axis direction is the vertical direction of the display surface.

[0030] In one embodiment, the display device 101 is an OLED (Organic Light Emitting Diode) display device. The display device 101 may also be a microdisplay. In one embodiment, an example in which the display device 101 is a top-emission type display device is described, but the type of display device 101 is not limited to this example.

[0031] Figure 2 is a plan view showing an enlarged portion of the display area RE1. Multiple subpixels 10R, 10G, and 10B are arranged in a predetermined array pattern in two dimensions within the display area RE1. In Figure 2, the sections labeled "R," "G," and "B" represent subpixels 10R, 10G, and 10B, respectively.

[0032] Note that while Figure 2 shows an example where the specified arrangement pattern is a delta arrangement, the arrangement pattern is not limited to this example. For example, the specified arrangement pattern may be a stripe arrangement, a mosaic arrangement, a square arrangement, or any other arrangement. The pad portion 113 and a driver for displaying images (not shown) are provided in the peripheral region RE2. A flexible printed circuit board (FPC), not shown, may be connected to the pad portion 113.

[0033] Sub-pixel 10R can emit red light. Sub-pixel 10G can emit green light. Sub-pixel 10B can emit blue light. In the following description, when sub-pixels 10R, 10G, and 10B are not specifically distinguished and are referred to collectively, they may simply be called sub-pixel 10. One pixel 10P is composed of, for example, multiple adjacent sub-pixels 10R, 10G, and 10B. However, the configuration of one pixel 10P is not limited to this example.

[0034] [Layer structure of display device 101] Figure 3 is a cross-sectional view along line III-III in Figure 2. The display device 101 comprises a drive substrate 11, a plurality of light-emitting elements 12, an insulating layer 13, a low dielectric constant layer 14, an intermediate layer 15, a protective layer 16, a planarization layer 17, a color filter 18, a filling resin layer 19, and a cover glass 20.

[0035] In this disclosure, of the two surfaces of each layer constituting the display device 101, the surface that is the display surface side (top side) of the display device 101 is referred to as the first surface (or top surface), and the surface that is opposite to the display surface (bottom side) of the display device 101 is referred to as the second surface (or bottom surface). In this disclosure, the peripheral edge of the first surface refers to a portion having a predetermined width extending inward from the peripheral edge of the first surface, and the peripheral edge of the second surface refers to a portion having a predetermined width extending inward from the peripheral edge of the second surface. In this disclosure, a plan view refers to a plan view when the object is viewed from a direction perpendicular to the first surface or the second surface. In this disclosure, unless otherwise specified, the in-plane direction refers to the in-plane direction of the first surface of the drive substrate 11. In this disclosure, upward refers to the direction from the bottom side (opposite side to the display surface) of the display device 101 toward the top side (display surface side) of the display device 101. Downward refers to the direction from the top side (display surface side) of the display device 101 toward the bottom side of the display device 101.

[0036] (Driver substrate 11) The driver substrate 11 is a so-called backplane and can drive a plurality of light-emitting elements 12. The driver substrate 11 comprises, for example, a substrate 111 and an insulating layer 112 in that order.

[0037] Multiple drive transistors (not shown) are provided on the first surface side of the substrate 111. The substrate 111 may be, for example, a semiconductor substrate that facilitates the formation of drive transistors, or it may be a glass substrate or resin substrate with low permeability to moisture and oxygen. The semiconductor substrate includes, for example, amorphous silicon, polycrystalline silicon, or single-crystal silicon. The glass substrate includes, for example, high-strain-point glass, soda glass, borosilicate glass, forsterite, lead glass, or quartz glass. The resin substrate includes, for example, at least one selected from the group consisting of polymethyl methacrylate, polyvinyl alcohol, polyvinylphenol, polyethersulfone, polyimide, polycarbonate, polyethylene terephthalate, and polyethylene naphthalate.

[0038] The insulating layer 112 is provided on the first surface of the substrate 111 and covers a plurality of drive transistors, etc. The insulating layer 112 contains a plurality of contact plugs and a plurality of wires (none of which are shown) inside. The contact plugs and wires electrically connect the light-emitting element 12 and the drive transistors. The contact plugs include, for example, at least one metal selected from the group consisting of copper (Cu) and titanium (Ti). The wires are composed of, for example, a metal layer. The metal layer includes, for example, at least one metal selected from the group consisting of tungsten (W) and tungsten (Cu). A barrier metal may be provided on the surface of the wires. The barrier metal may be, for example, tantalum (Ta) or tantalum nitride (TaN). x ) and others.

[0039] The insulating layer 112 is, for example, an organic insulating layer, an inorganic insulating layer, or a laminate thereof. The organic insulating layer includes, for example, at least one selected from the group consisting of polyimide resins, acrylic resins, and novolac resins. The inorganic insulating layer is, for example, silicon oxide (SiO x ), silicon nitride (SiN x ) and silicon oxynitride (SiO x N y It includes at least one species selected from the group consisting of the following:

[0040] (Light-emitting element 12) The light-emitting element 12 can emit white light based on control of a drive circuit or the like. In one embodiment, the light-emitting element 12 is an organic light-emitting diode (OLED) element. The light-emitting element 12 is included in the sub-pixels 10R, 10G, and 10B of each color.

[0041] Multiple light-emitting elements 12 are arranged in a two-dimensional manner on the first surface of the drive substrate 11 in a predetermined arrangement pattern. The predetermined arrangement pattern is as described in relation to the predetermined arrangement pattern of multiple sub-pixels 10. Each light-emitting element 12 includes, in order, a first electrode 121, an OLED layer 122, and a second electrode 123 on the first surface of the drive substrate 11.

[0042] (First electrode 121) The first electrode 121 is provided on the second surface side of the OLED layer 122. The first electrode 121 is an individual electrode provided separately for each of the multiple light-emitting elements 12. That is, the first electrode 121 is separated between adjacent light-emitting elements 12 in the in-plane direction. The first electrode 121 is an anode. When a voltage is applied between the first electrode 121 and the second electrode 123, holes are injected from the first electrode 121 into the OLED layer 122.

[0043] The first electrode 121 may be composed of, for example, a metal layer, or a metal layer and a transparent conductive oxide layer. When the first electrode 121 is composed of a metal layer and a transparent conductive oxide layer, it is preferable that the transparent conductive oxide layer be provided on the OLED layer 122 side, from the viewpoint of having a layer with a high work function adjacent to the OLED layer 122.

[0044] The metal layer may function as a reflective layer that reflects light emitted by the OLED layer 122. The metal layer contains, for example, at least one metallic element selected from the group consisting of chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al), magnesium (Mg), iron (Fe), tungsten (W), and silver (Ag). The metal layer may contain the above at least one metallic element as a constituent element of the alloy. Specific examples of the alloy include aluminum alloys and silver alloys. Specific examples of aluminum alloys include, for example, aluminum neodymium (AlNd) alloys and aluminum copper (AlCu) alloys.

[0045] A base layer (not shown) may be provided adjacent to the second surface of the metal layer. The base layer may improve the crystal orientation of the metal layer during film formation. The base layer contains, for example, at least one metal element selected from the group consisting of titanium (Ti) and tantalum (Ta). The base layer may contain the above at least one metal element as a constituent element of the alloy.

[0046] The transparent conductive oxide layer contains a transparent conductive oxide. The transparent conductive oxide includes, for example, at least one selected from the group consisting of indium-containing transparent conductive oxides (hereinafter referred to as "indium-based transparent conductive oxides"), tin-containing transparent conductive oxides (hereinafter referred to as "tin-based transparent conductive oxides"), and zinc-containing transparent conductive oxides (hereinafter referred to as "zinc-based transparent conductive oxides").

[0047] Indium-based transparent conductive oxides include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium gallium zinc oxide (IGZO), or fluorine-doped indium oxide (IFO). Among these transparent conductive oxides, indium tin oxide (ITO) is particularly preferred. Indium tin oxide (ITO) has a particularly low work function in terms of the hole injection barrier to the OLED layer 122, which allows for a particularly low driving voltage for the display device 101. Tin-based transparent conductive oxides include, for example, tin oxide, antimond-doped tin oxide (ATO), or fluorine-doped tin oxide (FTO). Zinc-based transparent conductive oxides include, for example, zinc oxide, aluminum-doped zinc oxide (AZO), boron-doped zinc oxide, or gallium-doped zinc oxide (GZO).

[0048] (OLED layer 122) The OLED layer 122 is capable of emitting white light. The OLED layer 122 is an example of an organic material-containing layer that includes an organic light-emitting layer. The OLED layer 122 is provided between the first electrode 121 and the second electrode 123. The OLED layer 122 is connected between adjacent light-emitting elements 12 in the in-plane direction and is a common layer for multiple light-emitting elements 12. That is, multiple subpixels 10 share the OLED layer 122.

[0049] The OLED layer 122 may be composed of a laminate including an organic light-emitting layer, in which case some of the layers of the laminate (for example, an electron injection layer) may be inorganic layers. The OLED layer 122 may be an OLED layer having a single light-emitting unit U, as shown in Figure 4A, or an OLED layer (tandem structure) having two light-emitting units U1 and U2, as shown in Figure 4B, or an OLED layer with any other structure. The OLED layer 122 having a single light-emitting unit U may have a configuration in which, for example, a hole injection layer 1221, a hole transport layer 1222, a red light-emitting layer 1220R, a light-emitting separation layer 1223, a blue light-emitting layer 1220B, a green light-emitting layer 1220G, an electron transport layer 1224, and an electron injection layer 1225 are laminated in this order from the first electrode 121 toward the second electrode 123. An OLED layer having two light-emitting units U1 and U2 has a configuration in which, for example, a hole injection layer 1221, a hole transport layer 1222, a blue light-emitting layer 1220B, an electron transport layer 1226, a charge generation layer 1227, a hole transport layer 1228, a yellow light-emitting layer 1220Y, an electron transport layer 1224, and an electron injection layer 1225 are stacked in this order from the first electrode 121 toward the second electrode 123.

[0050] The hole injection layer 1221 can increase the hole injection efficiency to the light-emitting layers 1220R, 1220G, and 1220B while suppressing leakage. The hole transport layers 1222 and 1228 can increase the hole transport efficiency to the light-emitting layers 1220R, 1220B, and 1220Y. The electron injection layer 1225 can increase the electron injection efficiency to the light-emitting layers 1220G and 1220Y. The electron transport layers 1224 and 1226 can increase the electron transport efficiency to the light-emitting layers 1220G, 1220B, and 1220Y. The emission separation layer 1223 is a layer for adjusting the carrier injection into the light-emitting layers 1220R, 1220G, and 1220B, and the emission balance of each color is adjusted by injecting electrons and holes into the light-emitting layers 1220R, 1220G, and 1220B via the emission separation layer 1223. The charge generation layer 1227 can supply electrons and holes, respectively, to the blue light-emitting layer 1220B and the yellow light-emitting layer 1220Y, which are provided so as to sandwich the charge generation layer 1227.

[0051] When an electric field is applied to the red light-emitting layer 1220R, the green light-emitting layer 1220G, the blue light-emitting layer 1220B, and the yellow light-emitting layer 1220Y, recombination occurs between holes injected from the first electrode 121 or the charge generation layer 1227 and electrons injected from the second electrode 123 or the charge generation layer 1227, causing the emission of red, green, blue, and yellow light, respectively.

[0052] (Second electrode 123) The second electrode 123 is provided on the first surface side of the OLED layer 122. The second electrode 123 is connected between adjacent light-emitting elements 12 in the in-plane direction and is a common electrode for multiple light-emitting elements 12. That is, multiple sub-pixels 10 share the second electrode 123.

[0053] The second electrode 123 is a cathode. When a voltage is applied between the first electrode 121 and the second electrode 123, electrons are injected from the second electrode 123 into the OLED layer 122. The second electrode 123 is transparent to light emitted from the OLED layer 122. Preferably, the second electrode 123 is a transparent electrode that is transparent to visible light. In this disclosure, visible light refers to light in the wavelength range of 360 nm to 780 nm.

[0054] To improve luminescence efficiency, it is preferable that the second electrode 123 be made of a material that has as high light transmittance as possible and a small work function. The second electrode 123 is made of, for example, at least one of a metal layer and a transparent conductive oxide layer. More specifically, the second electrode 123 is made of a single layer of a metal layer or a transparent conductive oxide layer, or a laminated film of a metal layer and a transparent conductive oxide layer. When the second electrode 123 is made of a laminated film, the metal layer may be provided on the OLED layer 122 side, or the transparent conductive oxide layer may be provided on the OLED layer 122 side.

[0055] The metal layer contains, for example, at least one metal element selected from the group consisting of magnesium (Mg), aluminum (Al), silver (Ag), calcium (Ca), and sodium (Na). The metal layer may also contain the above at least one metal element as a constituent element of the alloy. Specific examples of alloys include magnesium-silver (MgAg) alloy, magnesium-aluminum (MgAl) alloy, or aluminum-lithium (AlLi) alloy. The transparent conductive oxide layer contains a transparent conductive oxide. Examples of the transparent conductive oxide include materials similar to the transparent conductive oxide of the first electrode 121 described above.

[0056] (Insulating layer 13) The insulating layer 13 is provided on the first surface of the drive substrate 11 in the portion between adjacent first electrodes 121. The insulating layer 13 is an insulating layer for separating elements and can insulate between adjacent first electrodes 121 in the in-plane direction.

[0057] The insulating layer 13 has a plurality of openings 13a in the display area RE1. Each of the plurality of openings 13a is provided corresponding to the light-emitting element 12. More specifically, each of the plurality of openings 13a is provided above the first surface (the surface on the OLED layer 122 side) of the first electrode 121, and the insulating layer 13 covers the peripheral edge of the first surface of the first electrode 121 and the side surface (end face) of the first electrode 121. In a plan view, the openings 13a are located inside the periphery of the first electrode 121. The shape of the openings 13a in a plan view is not particularly limited, but for example, it may be approximately rectangular, approximately circular, or approximately elliptical.

[0058] Figure 5 is an enlarged cross-sectional view of the vicinity of the light-emitting element 12. Figure 6 is an enlarged plan view of the vicinity of the light-emitting element 12. The insulating layer 13 has an interpixel portion 13b, a sidewall portion 13c, and an overhang portion 13d. The interpixel portion 13b is provided in the portion between adjacent light-emitting elements 12. The sidewall portion 13c is erected substantially perpendicular to the first surface of the drive substrate 11 and covers the side surface of the first electrode 121 via the low dielectric constant layer 14 and the intermediate layer 15. The overhang portion 13d has an overhang shape that extends from the upper end of the inner circumferential surface of the sidewall portion 13c toward the central axis of the light-emitting element 12 and covers the peripheral edge of the first surface of the first electrode 121 via the low dielectric constant layer 14 and the intermediate layer 15. In this disclosure, the central axis of the light-emitting element 12 refers to an axis that passes through the geometric center of the light-emitting region of the light-emitting element 12 in a plan view and is parallel to the Z-axis.

[0059] The average thickness of the insulating layer 13 is, for example, 10 nm to 20 nm. The average thickness of the insulating layer 13 is determined as follows. First, a cross-section of the display device 101 is cut out by cryo-FIB (Focused Ion Beam) processing or the like to create a thin section. Next, the prepared thin section is observed with a TEM (Transmission Electron Microscope) and one cross-sectional TEM image is obtained. At this time, the acceleration voltage is set to 80 kV. Next, in the obtained cross-sectional TEM image, the thickness of the portion of the insulating layer 13 covering the first electrode 121 (the protruding portion 13d in Figure 5) is measured at 10 or more points. At this time, each measurement position is randomly selected from the portion covering the first electrode 121. After that, the average thickness of the insulating layer 13 is obtained by simply averaging (arithmetic mean) the thicknesses of the 10 or more points measured.

[0060] The insulating layer 13 includes a bulk layer 131 and a surface layer 132, as shown in Figure 5.

[0061] (Bulk layer) The bulk layer 131 is the main body of the insulating layer 13. It is preferable that the bulk layer 131 is positively charged. By the bulk layer 131 being positively charged, leakage of the drive current between adjacent light-emitting elements 12 can be suppressed.

[0062] The bulk layer 131 contains a silicon compound. The silicon compound preferably contains a silicon nitride-based material. This is because when the bulk layer 131 contains a silicon nitride-based material, the bulk layer 131 is likely to have positive fixed charges. The silicon nitride-based material includes, for example, silicon nitride (SiN x ), silicon carbonitride (SiC x N y ), and silicon oxynitride (SiO x N y ), and includes at least one selected from the group consisting of these.

[0063] The bulk layer 131 may further contain hydrogen (H). For example, when the bulk layer 131 is formed by reacting a Si-containing gas (such as SiH 4 etc.) with a N-containing gas (such as NH 2 , NH 3 etc.) by CVD (Chemical Vapor Deposition) or the like, usually, the bulk layer 131 contains hydrogen contained in the source gas.

[0064] When the bulk layer 131 contains a silicon nitride-based material as the silicon compound, hydrogen may be bonded to silicon and nitrogen. In this case, the peak intensity ratio (I N-H / I Si-H ) of the peak intensity I N-H derived from the N-H bond and the peak intensity I Si-H derived from the Si-H bond, obtained by analyzing the bulk layer 131 with a Fourier Transform Infrared Spectrometer (FT-IR), is preferably less than 4, more preferably 3 or less. When the peak intensity ratio (I N-H / I Si-H ) is less than 4, the dipole formed at the interface with the intermediate layer 15 can be increased. Therefore, the fixed charges of the insulating layer 13 can be increased, and the insulating layer 13 can be effectively positively charged. Therefore, the leakage of the drive current between the adjacent light-emitting elements 12 can be further suppressed.

[0065] The above peak intensity ratio (I N-H / I Si-HThe peak intensity ratio (I) is determined as follows. First, the cover glass 20 is peeled off from the display device 101, and then each layer stacked on the bulk layer 131 is peeled off to expose the surface of the bulk layer 131. Next, the bulk layer 131 is analyzed by FT-IR and an FT-IR spectrum is obtained. Then, using the obtained FT-IR spectrum, the above peak intensity ratio (I) is determined. N-H / I Si-H )

[0066] (Surface layer 132) The surface layer 132 is provided on the first surface side (the surface side facing the OLED layer 122) of the bulk layer 131. That is, the surface layer 132 is provided between the bulk layer 131 and the OLED layer 122. The surface layer 132 is intended to suppress leakage of drive current between adjacent light-emitting elements 12. The surface layer 132 has lattice distortion, which enables the function of suppressing leakage of drive current between adjacent light-emitting elements 12. Here, "lattice distortion" includes the lattice distortion of minute crystal grains contained in the surface layer 132.

[0067] The surface layer 132 has a different composition from the bulk layer 131. Specifically, for example, the surface layer 132 contains silicon oxide. The surface layer 132 may further contain nitrogen (N). In this case, the nitrogen may form bonds with silicon in the surface layer 132 and exist as silicon nitride or silicon oxynitride. The inclusion of nitrogen in the surface layer 132 makes it easier for the surface layer 132 to generate lattice distortion, which further improves the function of suppressing drive current leakage between adjacent light-emitting elements 12.

[0068] From the viewpoint of improving the function of suppressing drive current leakage between adjacent light-emitting elements 12, it is preferable that the surface layer 132 covers the main surface (first surface) of the bulk layer 131 as well as the side surface of the opening of the bulk layer 131. Furthermore, from the viewpoint of improving the function of suppressing drive current leakage between adjacent light-emitting elements 12, it is preferable that the surface layer 132 has a substantially uniform thickness throughout the entire layer. It is preferable that the upper limit of the average thickness of the surface layer 132 is 10 nm or less. When the average thickness of the surface layer 132 is 10 nm or less, the relaxation of lattice distortion of the surface layer 132 can be suppressed. By suppressing the relaxation of lattice distortion in this way, the decrease in the function of suppressing drive current leakage between adjacent light-emitting elements 12 can be suppressed. It is preferable that the lower limit of the average thickness of the surface layer 132 is 2 nm or more. When the average thickness of the surface layer 132 is 2 nm or more, the function of suppressing drive current leakage between adjacent light-emitting elements 12 can be effectively expressed. The average thickness of the surface layer 132 is determined in the same way as the average thickness of the insulating layer 13 described above.

[0069] When the bulk layer 131 contains a silicon nitride-based material, it is preferable that the ratio of silicon oxide to the total amount of silicon oxide and silicon nitride in the surface layer 132 is 80% or more. When the above ratio is 80% or more, the difference in composition between the bulk layer 131 and the surface layer 132 can effectively generate lattice strain in the surface layer 132. Therefore, the function of suppressing drive current leakage between adjacent light-emitting elements 12 can be further improved.

[0070] The ratio of silicon oxide to the total amount of silicon oxide and silicon nitride is determined as follows. First, a cross-section of the display device 101 is cut out using the FIB method or the like to create a thin section. Next, the cross-section of the thin section is analyzed using electron energy loss spectroscopy (EELS) to determine the content of silicon oxide and silicon nitride in the surface layer 132. Then, using these content levels, the ratio of silicon oxide to the total amount of silicon oxide and silicon nitride is calculated.

[0071] (Low Dielectric Constant Layer 14) The low dielectric constant layer 14 is provided on the second surface side (the side facing the drive substrate 11) of the insulating layer 13. The low dielectric constant layer 14 is an example of a low dielectric constant member. The low dielectric constant layer 14 functions as an electric field mitigation layer that mitigates the electric field applied to the OLED layer 122 near the opening 13a of the insulating layer 13 when the light-emitting element 12 is driven. The low dielectric constant layer 14 has a lower dielectric constant than the dielectric constant of the bulk layer 131. The dielectric constant of the low dielectric constant layer 14 is preferably 4.0 or less, more preferably 2.5 to 3.0. The dielectric constant of the insulating layer 13 is usually greater than 4.0. Therefore, if the dielectric constant of the low dielectric constant layer 14 is 4.0 or less, the electric field applied to the OLED layer 122 near the opening 13a of the insulating layer 13 can be mitigated when the light-emitting element 12 is driven.

[0072] The low dielectric constant layer 14 has a plurality of openings 14a in the display area RE1. Each of the plurality of openings 14a is provided corresponding to the light-emitting element 12. More specifically, each of the plurality of openings 14a is provided above the first surface (the surface on the OLED layer 122 side) of the first electrode 121. The low dielectric constant layer 14 covers the peripheral edge of the first surface of the first electrode 121 and the side surface (end face) of the first electrode 121. The shape of the openings 14a in plan view is not particularly limited, but for example, it may be approximately rectangular, approximately circular, or approximately elliptical.

[0073] The low dielectric constant layer 14 has an interpixel portion 14b, a sidewall portion 14c, and an overhang portion 14d. The interpixel portion 14b is provided in the portion between adjacent light-emitting elements 12. The sidewall portion 14c is erected substantially perpendicular to the first surface of the drive substrate 11 and covers the side surface of the first electrode 121 via the intermediate layer 15. The overhang portion 14d has an overhang shape that extends from the upper end of the inner circumferential surface of the sidewall portion 14c toward the central axis of the light-emitting element 12 and covers the peripheral edge of the first surface of the first electrode 121 via the intermediate layer 15.

[0074] The average thickness of the low dielectric constant layer 14 is preferably 5 nm or more and 20 nm or less. If the average thickness of the low dielectric constant layer 14 is too thin, the function of the low dielectric constant layer 14 as an electric field relaxation layer may be impaired, so the lower limit of the average thickness of the low dielectric constant layer 14 is preferably 5 nm or more, as described above. On the other hand, if the average thickness of the low dielectric constant layer 14 is too thick, the step structure formed by the side surface of the opening 13a, the side surface of the opening 14a, and the side surface of the opening 15a will be large, and the adhesion of the OLED layer 122 near the opening 13a of the insulating layer 13 may be impaired, so the upper limit of the average thickness of the low dielectric constant layer 14 is preferably 20 nm or less, as described above. The difference between the average thickness of the low dielectric constant layer 14 and the average thickness of the insulating layer 13 is preferably within ±10 nm. The average thickness of the low dielectric constant layer 14 is determined in the same manner as the average thickness of the insulating layer 13 described above.

[0075] The low dielectric constant layer 14 includes, for example, at least one selected from the group consisting of carbon-containing silicon oxide (SiOC), silane-based materials, and porous materials. If the low dielectric constant layer 14 includes two or more of these materials, those two or more materials may be laminated. Silane-based materials include, for example, silicon oxide with added hydrocarbons (SiOCH). Porous materials include, for example, at least one of silica xerogel and silica aerogel.

[0076] (Intermediate layer 15) The intermediate layer 15 is provided on the second side of the low dielectric constant layer 14 (the side facing the drive substrate 11). The intermediate layer 15 can suppress the diffusion of constituent materials, such as oxygen, between the first electrode 121 and the insulating layer 13, thereby suppressing the deterioration of the properties of the insulating layer 13. Specifically, the intermediate layer 15 can suppress the decrease in fixed charge of the bulk layer 131, thereby maintaining the positively charged state of the bulk layer 131. Furthermore, the intermediate layer 15 can suppress the diffusion of constituent materials between the first electrode 121 and the low dielectric constant layer 14, thereby suppressing the deterioration of the properties of the low dielectric constant layer 14. Specifically, the intermediate layer 15 can suppress changes in the dielectric constant of the low dielectric constant layer 14.

[0077] The intermediate layer 15 has a plurality of openings 15a in the display area RE1. Each of the plurality of openings 15a is provided corresponding to the light-emitting element 12. More specifically, each of the plurality of openings 15a is provided on the first surface (the surface on the OLED layer 122 side) of the first electrode 121. The openings 13a, 14a, and 15a overlap. The first electrode 121 and the OLED layer 122 are in contact through the overlapping openings 13a, 14a, and 15a. In Figure 6, in a plan view, the side surfaces of opening 13a and 14a coincide and are flush, while the side surface of opening 15a is located inside the side surfaces of opening 13a and 14a. However, the positional relationship of openings 13a, 14a, and 15a is not limited to this example. The shape of the openings 15a in a plan view is not particularly limited, but for example, it may be roughly rectangular, roughly circular, or roughly elliptical.

[0078] The intermediate layer 15 has an interpixel portion 15b, a side wall portion 15c, and an overhang portion 15d. The interpixel portion 15b is provided in the portion between adjacent light-emitting elements 12. The side wall portion 15c is erected substantially perpendicular to the first surface of the drive substrate 11 and covers the side surface of the first electrode 121. The overhang portion 15d has an overhang shape that extends from the upper end of the inner circumferential surface of the side wall portion 15c toward the central axis of the light-emitting element 12 and covers the peripheral edge of the first surface of the first electrode 121.

[0079] The intermediate layer 15 has a different composition from the bulk layer 131. Specifically, for example, the intermediate layer 15 is silicon oxide (SiO x ) is included. The average thickness of the intermediate layer 15 is preferably 1 nm or more and less than 15 nm, more preferably 1 nm or more and 13 nm or less, even more preferably 1 nm or more and 9 nm or less, particularly preferably 1 nm or more and 7 nm or less, and most preferably 1 nm or more and 5 nm or less, from the viewpoint of suppressing the degradation of the characteristics of the insulating layer 13 and the low dielectric constant layer 14. The average thickness of the intermediate layer 15 is determined in the same manner as the average thickness of the insulating layer 13 described above.

[0080] (Protective layer 16) The protective layer 16 is provided on the first surface of the second electrode 123 and covers the plurality of light-emitting elements 12. The protective layer 16 is transparent to light emitted from the light-emitting elements 12. The protective layer 16 can protect the light-emitting elements 12, etc. For example, the protective layer 16 can suppress the intrusion of moisture into the light-emitting elements 12, etc. from the external environment. If the second electrode 123 is made of a metal layer, the protective layer 16 may have a function to suppress the oxidation of this metal layer.

[0081] The protective layer 16 includes, for example, at least one of an inorganic material and an organic material with low hygroscopicity. The protective layer 16 may be a single layer or a multilayer structure. When increasing the thickness of the protective layer 16, a multilayer structure is preferable to relieve internal stress in the protective layer 16. The inorganic material is, for example, silicon oxide (SiO₂). x ), silicon nitride (SiN x ), silicon oxide nitride (SiO x N y ), titanium oxide (TiO x ) and aluminum oxide (AlO x The organic material includes at least one selected from the group consisting of, for example, thermosetting resins and photosensitive resins. The photosensitive resin includes, for example, ultraviolet curable resins. Specifically, the organic material includes at least one selected from the group consisting of, for example, acrylic resins, polyimide resins, novolac resins, epoxy resins, norbornene resins and parylene resins.

[0082] The protective layer 16 preferably includes a deposited layer in which atomic layers are deposited. The deposited layer may be an ALD (Atomic Layer Deposition) layer. Including a deposited layer in the protective layer 16 can improve the effect of the protective layer 16 in suppressing moisture penetration. The deposited layer includes, for example, a metal oxide or a metal nitride. The metal oxide is, for example, aluminum oxide (AlO2). x ) or titanium dioxide (TiO x ) contains. Metal nitrides include, for example, titanium nitride (TiN x ) includes.

[0083] (Planarizing layer 17) The planarizing layer 17 is provided on the first surface of the protective layer 16. The planarizing layer 17 can fill in the irregularities on the first surface side of the protective layer 16 and form a flat first surface. The planarizing layer 17 is transparent to light emitted from the light-emitting element 12. The planarizing layer 17 includes, for example, at least one of an organic material and an inorganic material.

[0084] The organic material includes, for example, a cured product of a photosensitive resin composition. The photosensitive resin composition may include either a positive-type photosensitive resin composition or a negative-type photosensitive resin composition. Specifically, the photosensitive resin composition includes, for example, at least one selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, acrylic resin, phenolic resin, and siloxane resin. Examples of inorganic materials include materials similar to the inorganic material of the protective layer 16.

[0085] (Color filter 18) The color filter 18 is a so-called on-chip color filter (OCCF). The color filter 18 is provided on the first surface of the planarization layer 17. The color filter 18 includes, for example, a plurality of colored layers 181R, a plurality of colored layers 181G, and a plurality of colored layers 181B. In the following description, when the colored layers 181R, 181G, and 181B are referred to collectively without particular distinction, they may simply be called colored layer 181.

[0086] Multiple colored layers 181 are arranged two-dimensionally on the first surface of the planarization layer 17 in a predetermined arrangement pattern. The predetermined arrangement pattern is as described in relation to the predetermined arrangement pattern of multiple sub-pixels 10. Each colored layer 181 is provided above the light-emitting element 12. Sub-pixel 10R includes the light-emitting element 12 and a colored layer 181R provided above the light-emitting element 12. Sub-pixel 10G includes the light-emitting element 12 and a colored layer 181G provided above the light-emitting element 12. Sub-pixel 10B includes the light-emitting element 12 and a colored layer 181B provided above the light-emitting element 12.

[0087] The colored layer 181R has a red color. The colored layer 181R transmits the red light component of the white light emitted from the light-emitting element 12, while absorbing components other than red light. The colored layer 181G has a green color. The colored layer 181G transmits the green light component of the white light emitted from the light-emitting element 12, while absorbing components other than green light. The colored layer 181B has a blue color. The colored layer 181B transmits the blue light component of the white light emitted from the light-emitting element 12, while absorbing components other than blue light.

[0088] The colored layer 181R includes, for example, a red color resist. The colored layer 181G includes, for example, a green color resist. The colored layer 181B includes, for example, a blue color resist.

[0089] (Filling resin layer 19) The filling resin layer 19 is filled between the color filter 18 and the cover glass 20. The filling resin layer 19 is transparent to light of each color emitted from the color filter 18. Preferably, the filling resin layer 19 is transparent to visible light. The filling resin layer 19 may also function as an adhesive layer that bonds the color filter 18 and the cover glass 20.

[0090] The filling resin layer 19 includes, for example, a curable resin. The curable resin includes at least one selected from the group consisting of thermosetting resins and UV-curable resins. However, the filling resin layer 19 is not limited to thermosetting resins and UV-curable resins, and may also include curable resins of other types.

[0091] (Cover glass 20) The cover glass 20 is provided on the first surface of the filling resin layer 19. The cover glass 20 seals the first surface side of the drive substrate 11 on which the various components such as the plurality of light-emitting elements 12 are provided. The cover glass 20 is transparent to light of each color emitted from the color filter 18. Preferably, the cover glass 20 is transparent to visible light. The cover glass 20 is made of, for example, a glass substrate.

[0092] [Manufacturing Method for Display Device 101] An example of a manufacturing method for a display device 101 according to one embodiment will be described below with reference to Figures 7A to 8C.

[0093] (Process for forming the first electrode 121) First, a metal layer and a metal oxide layer are sequentially formed on the first surface of the drive substrate 11, for example by sputtering, and then the metal layer and metal oxide layer are patterned, for example by photolithography. As a result, a plurality of first electrodes 121 are formed on the first surface of the drive substrate 11, as shown in Figure 7A.

[0094] (Process for forming the intermediate layer 15, low dielectric constant layer 14, and insulating layer 13) Next, as shown in Figure 7B, an intermediate layer 15, a low dielectric constant layer 14, and an insulating layer 130 are sequentially formed on the first surface of the drive substrate 11 so as to cover a plurality of first electrodes 121, for example by CVD. Next, as shown in Figures 7C, 7D, and 8A, the intermediate layer 15, the low dielectric constant layer 14, and the insulating layer 130 are sequentially processed by photolithography to form openings 15a, 14a, and 13a. After that, the surface of the insulating layer 130 is plasma treated. This forms an insulating layer 13 consisting of a bulk layer 131 and a surface layer 132, as shown in Figure 8B. For example, oxygen plasma treatment and nitrogen plasma treatment can be used as the plasma treatment. These plasma treatments may be used individually or in combination.

[0095] The method for forming the surface layer 132 is not limited to plasma treatment; for example, the surface layer 132 may be formed on the first surface of the insulating layer 130 by the ALD method. In this case, the insulating layer 130 remains as the bulk layer 131. When the surface layer 132 is formed on the first surface of the bulk layer 131 by the ALD method, the surface layer 132 is also formed on the first surface of the first electrode 121. However, because the adhesion efficiency of precursors differs between the surface of the first electrode 121, which contains a metallic material, and the surface of the bulk layer 131, which contains a silicon compound such as silicon nitride, almost no surface layer 132 is formed on the first surface of the first electrode 121. Therefore, the surface layer 132 formed on the first surface of the first electrode 121 does not substantially affect the driving of the light-emitting element 12. However, for the purpose of further improving the quality structure, the surface layer 132 formed on the first surface of the first electrode 121 may be removed using photolithography and etching techniques.

[0096] (Process for forming the OLED layer 122) Next, for example by vapor deposition, as shown in Figure 8C, a hole injection layer 1221, a hole transport layer 1222, a red light-emitting layer 1220R, a light-emitting separation layer 1223, a blue light-emitting layer 1220B, a green light-emitting layer 1220G, an electron transport layer 1224, and an electron injection layer 1225 are laminated in this order on the first surface of the drive substrate 11, on the first surface of the insulating layer 13 and on the first surfaces of the multiple first electrodes 121 exposed through the overlapping openings 13a, 14a, and 15a. This forms an OLED layer 122 having a single-layer light-emitting unit U. Note that the OLED layer 122 is not limited to an OLED layer having a single-layer light-emitting unit U, but may also be an OLED layer having two layers of light-emitting units U1 and U2, or an OLED layer with a different structure.

[0097] (Process for forming the second electrode 123) Next, the second electrode 123 is formed on the first surface of the OLED layer 122, for example, by a vapor deposition method or a sputtering method.

[0098] (Protective layer 16 formation process) Next, a protective layer 16 is formed on the first surface of the second electrode 123, for example, by CVD.

[0099] (Process for forming the planarization layer 17) Next, the resin composition is applied to the first surface of the protective layer 16, and then the planarization layer 17 is formed by curing it, for example, by light irradiation or heating.

[0100] (Color filter 18) Next, a green color resist is applied to the first surface of the planarization layer 17, and after pattern exposure by irradiating with ultraviolet light through a photomask, the material is developed to form a green colored layer 181G. Next, a red color resist is applied to the first surface of the planarization layer 17, and after pattern exposure by irradiating with ultraviolet light through a photomask, the material is developed to form a red colored layer 181R. Next, a blue color resist is applied to the first surface of the planarization layer 17, and after pattern exposure by irradiating with ultraviolet light through a photomask, the material is developed to form a blue colored layer 181B. As a result, a color filter 18 is formed on the first surface of the planarization layer 17.

[0101] (Assembly Process) Next, a filler resin is applied to the first surface of the color filter 18, and the cover glass 20 is placed on top of the filler resin. After placement, the cover glass 20 and the drive substrate 11 are bonded together via the filler resin by, for example, applying heat to the filler resin or irradiating the filler resin with ultraviolet light to cure the filler resin. This seals the display device 101. If the filler resin contains both a thermosetting resin and an ultraviolet curing resin, the filler resin may be partially cured by irradiating it with ultraviolet light, and then fully cured by applying heat to the filler resin.

[0102] (Cutting process) Next, the drive substrate 11, in which each layer has been formed as described above, is cut out and made into individual pieces. This gives rise to the display device 101. Next, if necessary, a flexible printed circuit board may be connected to the pad portion 113 of the display device 101.

[0103] [Effects] As described above, in the display device 101 according to one embodiment, the insulating layer 13 provided between adjacent light-emitting elements 12 and covering the peripheral edge of the first surface of each first electrode 121 contains a silicon compound and is positively charged. This prevents holes injected into the OLED layer 122 from one of the adjacent light-emitting elements 12 from flowing through the interface between the insulating layer 13 and the OLED layer 122 to the other light-emitting element 12. Therefore, leakage of drive current between adjacent light-emitting elements can be suppressed. In addition, in the display device 101 according to one embodiment, a low dielectric constant layer 14 is provided between the intermediate layer 15 and the insulating layer 13, and the low dielectric constant layer 14 has a lower dielectric constant than the bulk layer 131. This makes it possible to mitigate (reduce) the electric field applied to the portion of the OLED layer 122 located near the opening 13a of the insulating layer 13 when the light-emitting elements 12 are driven. Therefore, leakage of drive current between the first electrode 121 and the second electrode 123 can be suppressed. Therefore, in the display device 101 according to one embodiment, both leakage of drive current between adjacent light-emitting elements and leakage of drive current between the first electrode 121 and the second electrode 123 can be suppressed. As a result, the light emission of the OLED layer 122 near the opening 13a of the insulating layer 13 can be suppressed, and the luminous efficiency of the display device 101 can be improved.

[0104] The configuration of further providing a low dielectric constant layer 14 between the intermediate layer 15 and the insulating layer 13 does not involve significant changes to the configuration of existing display devices. Therefore, it is easy to apply to existing display devices.

[0105] A technique can be considered in which a tapered structure or deep groove is provided between adjacent light-emitting elements 12, and these tapered structures or deep grooves cause the OLED layer 122 to be stepped, thereby suppressing leakage of drive current between adjacent light-emitting elements. However, such a technique is disadvantageous from the viewpoint of miniaturizing the sub-pixels 10. It may also lead to an increase in the number of manufacturing steps, potentially reducing productivity. In contrast, in the display device 101 according to one embodiment, leakage of drive current between adjacent light-emitting elements can be suppressed without providing the tapered structure or deep grooves described above. Therefore, it is advantageous from the viewpoint of miniaturizing the sub-pixels 10. Furthermore, since an increase in the number of manufacturing steps can be suppressed, a decrease in productivity can also be suppressed.

[0106] <3 Modifications> [Modification 1] In one embodiment, an example was described in which the display device 101 includes an intermediate layer 15, as shown in Figure 5. However, the intermediate layer 15 is not an essential component, and as shown in Figure 9, the display device 101 does not need to include an intermediate layer 15.

[0107] [Modification 2] In one embodiment, as shown in Figure 5, an example was described in which the insulating layer 13 includes a surface layer 132. However, the surface layer 132 is not an essential component, and the insulating layer 13 does not need to include a surface layer 132.

[0108] [Modification 3] In one embodiment, as shown in Figure 5, an example was described in which the side surface of the opening 14a of the low dielectric constant layer 14 and the side surface of the opening 13a of the insulating layer 13 are flush. However, the positional relationship between the side surface of the opening 14a of the low dielectric constant layer 14 and the side surface of the opening 13a of the insulating layer 13 is not limited to this example.

[0109] For example, as shown in Figure 10, the insulating layer 13 may have a covering portion 133 that covers the side surface of the opening 14a of the low dielectric constant layer 14. In this case, deterioration of the low dielectric constant layer 14 can be suppressed. The thickness of the covering portion 133 in the in-plane direction is preferably 1 nm or more and 10 nm or less.

[0110] Furthermore, as shown in Figure 11, in a plan view, the side surface of the opening 14a of the low dielectric constant layer 14 may be located inward from the side surface of the opening 13a of the insulating layer 13, and in a plan view, the side surface of the opening 15a of the intermediate layer 15 may be located inward from the side surface of the opening 14a of the low dielectric constant layer 14. That is, the side surfaces of the openings 13a, 14a, and 15a may form a stepped structure on the first surface of the first electrode 121. This stepped structure gradually increases in height in the direction from the geometric center of the first electrode 121 toward the periphery of the first electrode 121.

[0111] The stepped structure described above is formed on the first surface of the first electrode 121, which suppresses the deterioration of the adhesion of the OLED layer 122 near the opening 13a of the insulating layer 13. Step D that constitutes the stepped structure 1 , D 2 , D 3 Each of these is preferably independently between 5 nm and 20 nm. Here, step D 1 This corresponds to the height of the side surface of the opening 13a of the insulating layer 13, and the step D 2 This corresponds to the height of the side surface of the opening 14a of the low dielectric constant layer 14, and the step D 3 This corresponds to the height of the side surface of the opening 15a of the intermediate layer 15.

[0112] [Modification 4] In one embodiment, as shown in Figure 5, an example was described in which the display device 101 includes a low dielectric constant layer 14 as a low dielectric constant member. However, the low dielectric constant member is not limited to this example. For example, as shown in Figure 12, the display device 101 may include a plurality of low dielectric constant structures 21 (hereinafter simply referred to as "structures 21") instead of the low dielectric constant layer 14 as a low dielectric constant member. The structures 21 have a dielectric constant lower than that of the bulk layer 131. The numerical range of the dielectric constant of the low dielectric constant layer 14 may be the same as the numerical range of the dielectric constant of the low dielectric constant layer 14 in one embodiment.

[0113] The structure 21 may have a dot shape in plan view, for example, as shown in Figure 13A. The dot shape may be, for example, circular, elliptical, polygonal, or irregular, or it may be any other shape. Structures having two or more types of dot shapes in plan view may be combined. The overall shape of the structure 21 may be, for example, columnar, frustum-shaped, conical, dome-shaped, or irregular, or it may be any other shape. Structures 21 having two or more types of overall shapes may be combined.

[0114] Multiple structures 21 may be contained within the insulating layer 13. In this case, the tops of the multiple structures 21 are separated from the first surface of the insulating layer 13 (the surface of the insulating layer 13 on the OLED layer 122 side), and the tops of the multiple structures 21 may be covered with the constituent material (insulating material) of the bulk layer 131. Multiple structures 21 having a dot shape in plan view are arranged two-dimensionally in the in-plane direction of the first electrode 121 on the first surface of the protruding portion 15d of the intermediate layer 15. The two-dimensional arrangement may be periodic or random. Figure 12 shows an example in which multiple structures 21 are also arranged two-dimensionally on the first surface of the interpixel portion 15b of the intermediate layer 15, but they do not have to be arranged on the first surface of the interpixel portion 15b of the intermediate layer 15. The portions between adjacent structures 21 may be filled with the constituent material (insulating material) of the bulk layer 131. From the viewpoint of suppressing deterioration of the structure 21, it is preferable that the multiple structures 21 are arranged within the insulating layer 13 so as not to be exposed from the side surface of the opening 13a of the insulating layer 13.

[0115] The shape of the structure 21 is not limited to a dot shape; for example, the structure 21 may have an annular shape, as shown in Figure 13B. Multiple annular structures 21 may be arranged concentrically in a plan view with respect to the geometric center of the first electrode 121. From the viewpoint of suppressing deterioration of the structure 21, it is preferable that the structure 21 located at the innermost circumference among the multiple concentrically arranged structures 21 is located inside the side surface of the opening 13a of the insulating layer 13 in a plan view.

[0116] The insulating layer 13 may have a plurality of protrusions 134 on its first surface. Each of the plurality of protrusions 134 is located above the plurality of structures 21. The insulating layer 13 may be provided so as to conform to the plurality of protrusions 134.

[0117] The low dielectric constant member provided in the display device 101 is not limited to either the low dielectric constant layer 14 or the plurality of structures 21, and the display device 101 may include both the low dielectric constant layer 14 and the plurality of structures 21. In this case, the low dielectric constant layer 14 and the plurality of structures 21 may be laminated, or the plurality of structures 21 may be provided within the low dielectric constant layer 14.

[0118] [Modification 5] In Modification 4, an example was described in which multiple structures 21 are arranged within the insulating layer 13 so as not to be exposed from the side surface of the opening 13a of the insulating layer 13. However, the arrangement of the multiple structures 21 is not limited to this example. For example, as shown in Figure 14, some of the multiple structures 21 may protrude from the side surface of the opening 13a of the insulating layer 13, forming a stepped structure. In this case, deterioration of the adhesion properties of the OLED layer 122 near the opening 13a of the insulating layer 13 can be suppressed. Also, in a plan view, the side surface of the opening 15a of the intermediate layer 15 may be located inside the structure 21 protruding from the side surface of the opening 13a of the insulating layer 13, and a stepped structure may also be formed by the first surface of the intermediate layer 15 and the first surface of the first electrode 121.

[0119] [Modification 6] In Modification 4, an example was described in which a plurality of structures 21 are provided on the first surface of the intermediate layer 15. However, as shown in Figure 15, the plurality of structures 21 may be provided inside the intermediate layer 15. Figure 15 shows an example in which the plurality of structures 21 are also provided inside the inter-pixel portions 15b and the side wall portions 15c of the intermediate layer 15. However, they do not have to be provided inside the inter-pixel portions 15b and the side wall portions 15c of the intermediate layer 15. In other words, the plurality of structures 21 may be provided only inside the protruding portions 15d of the intermediate layer 15. The shape and arrangement of the plurality of structures 21 are as described in Modification 4. From the viewpoint of suppressing deterioration of the structures 21, it is preferable that the plurality of structures 21 be arranged inside the intermediate layer 15 so as not to be exposed from the side surface of the opening 15a of the intermediate layer 15.

[0120] [Modification 7] In Modification 6, an example was described in which the multiple structures 21 are arranged within the intermediate layer 15 so as not to be exposed from the side of the opening 15a of the intermediate layer 15. However, the arrangement of the multiple structures 21 is not limited to this example. For example, as shown in Figure 16, some of the multiple structures 21 may protrude from the side of the opening 13a of the insulating layer 13, forming a stepped structure. In this case, deterioration of the adhesion properties of the OLED layer 122 near the opening 13a of the insulating layer 13 can be suppressed.

[0121] [Modification 8] In one embodiment, as shown in Figure 5, an example was described in which the low dielectric constant layer 14 has an inter-pixel portion 14b, a side wall portion 14c, and an overhang portion 14d. However, the inter-pixel portion 14b and the side wall portion 14c are not essential constituent elements, and the low dielectric constant layer 14 may have only an overhang portion 14d, as shown in Figure 17. Also, although not shown, the low dielectric constant layer 14 may have only a side wall portion 14c and an overhang portion 14d.

[0122] In one embodiment, as shown in Figure 5, an example was described in which the intermediate layer 15 has an inter-pixel portion 15b, a side wall portion 15c, and an overhang portion 15d. However, the inter-pixel portion 15b is not an essential component, and the low dielectric constant layer 14 may have only the side wall portion 15c and the overhang portion 15d, as shown in Figure 17.

[0123] [Modification 9] The display device 101 may further include a lens array 22, as shown in Figure 18. The lens array 22 is provided on the first surface of the color filter 18. The lens array 22 includes a plurality of lenses 221. The lenses 221 can focus light emitted upward from the light-emitting element 12 and incident through the colored layer 181 in a forward direction. The lenses 221 are convex lenses having a convex focusing surface on the side opposite to the light-emitting element 12. Preferably, the focusing surface of the lens 221 has a convex curved surface shape. The plurality of lenses 221 are so-called on-chip microlenses (OCLs) and are arranged two-dimensionally on the first surface of the color filter 18 in a predetermined arrangement pattern. The predetermined arrangement pattern is as described in the predetermined arrangement pattern of a plurality of subpixels 10. The center of the lens 221 may substantially coincide with the center of the light-emitting region of the light-emitting element 12 in a plan view.

[0124] Refractive index n of lens 221 1 The refractive index n of the filling resin layer 19 2 It is preferable that it is higher than (n 2 <n 1 ). The refractive index n of lens 221 1 The refractive index n of the filling resin layer 19 2 Because it is higher than the other, light can be refracted and focused at the interface between the lens 221 and the filling resin layer 19. Therefore, the light extraction function can be improved.

[0125] The lens 221 includes, for example, an organic or inorganic material that is transparent to visible light. The organic material includes, for example, a cured product of a photosensitive resin composition such as an ultraviolet-curable resin composition. The inorganic material is, for example, silicon nitride (SiN x ) and silicon oxynitride (SiO x N y It includes at least one selected from the group consisting of ) etc. Lens 221 may also contain fillers. By adjusting the amount of filler contained in lens 221, the refractive index n of lens 221 can be adjusted. 1This can be adjusted. The filler may be an inorganic filler. An inorganic filler is, for example, aluminum oxide (AlO2). x ), titanium oxide (TiO x ) and zirconium oxide (ZrO x It includes at least one selected from the group consisting of ) etc. The filler may be a hollow filler.

[0126] [Modification 10] In one embodiment, an example was described in which the display device 101 comprises a plurality of light-emitting elements 12 capable of emitting white light and a color filter 18, and a color image can be displayed by a combination of these. However, the method of colorizing the display device 101 is not limited to this. For example, the display device 101 may be equipped with a plurality of light-emitting elements capable of emitting red light, a plurality of light-emitting elements capable of emitting green light, and a plurality of light-emitting elements capable of emitting blue light instead of a plurality of light-emitting elements 12 capable of emitting white light. In this case, the color filter is not an essential component and may or may not be provided.

[0127] A light-emitting element capable of emitting light of a predetermined color (red light, green light, or blue light) is, for example, (1) a light-emitting element including a light-emitting layer capable of emitting light of a predetermined color (red light, green light, or blue light), (2) a light-emitting element including a light-emitting layer capable of emitting white light, and capable of resonating and emphasizing light of a predetermined wavelength (red light, green light, or blue light) contained in the white light emitted by the light-emitting layer using a resonator structure, or (3) a light-emitting element including a light-emitting layer capable of emitting light of a predetermined color (red light, green light, or blue light), and capable of resonating and emphasizing light of a predetermined wavelength contained in the light of a predetermined color emitted by the light-emitting layer using a resonator structure.

[0128] [Modification 11] In the entire display area RE1, the center of the colored layer 181 may substantially coincide with the center of the light-emitting region of the light-emitting element 12 in the in-plane direction. However, the positional relationship between the colored layer 181 and the light-emitting element 12 is not limited to this example. For example, in the central part of the display area RE1, the geometric center of the colored layer 181 substantially coincides with the geometric center of the light-emitting region of the light-emitting element 12 in a plan view, whereas in the peripheral part of the display area RE1, the geometric center of the colored layer 181 may be shifted towards the outer periphery of the display area RE1 with respect to the geometric center of the light-emitting region of the light-emitting element 12 in a plan view. In this case, the principal ray axis of the peripheral part of the display area RE1 can be tilted outward from the display area RE1 with respect to the normal (Z-axis) of the display surface. Thus, the display device 101 can be made wide FOV (Field of View).

[0129] As explained in Modification 9, when the display device 101 includes a lens array 22, in the central part of the display area RE1, the geometric centers of the colored layer 181 and the lens 221 substantially coincide with the geometric center of the light-emitting region of the light-emitting element 12 in a plan view, whereas in the peripheral part of the display area RE1, the geometric centers of the colored layer 181 and the lens 221 may be shifted towards the outer periphery of the display area RE1 with respect to the center of the light-emitting region of the light-emitting element 12 in a plan view. Details of the positional relationship between the light-emitting element 12, the colored layer 181 and the lens 221 will be explained in "5 Relationship of normals passing through the centers of the light-emitting part, lens member and wavelength selection part, respectively".

[0130] [Modification 12] From the viewpoint of improving light extraction efficiency and / or color purity, the light-emitting element 12 may have a resonator structure.

[0131] If the first electrode 121 is a reflective electrode that functions as a reflective layer, a resonator structure may be formed by the first electrode 121 and the second electrode 123. In this case, the optical distance between the first electrode 121 and the second electrode 123 may be set by the thickness of the OLED layer 122, by the selection of the material of the first electrode 121, or by a combination of these.

[0132] If the first electrode 121 is a transparent electrode, a reflective layer may be provided below the transparent electrode, and the resonator structure may be formed by the reflective layer and the second electrode 123. In this case, the optical distance between the reflective layer and the second electrode 123 may be set by the thickness of the OLED layer 122, by the selection of the material of the reflective layer, by the thickness of the insulating layer provided between the first electrode 121 (transparent electrode) and the reflective layer, or by a combination of two or more of these. Details of the resonator structure will be explained in "6. Examples of Resonator Structures".

[0133] [Modification 13] In one embodiment, an example in which a color filter 18 is provided has been described, but a quantum dot layer may be provided instead of the color filter 18, or a quantum dot layer may be provided together with the color filter 18. The quantum dot layer is a color conversion layer that contains quantum dots (semiconductor particles) and can convert the color of light emitted from a plurality of light-emitting elements. In this case, the plurality of light-emitting elements 12 may be configured to emit blue light.

[0134] [Modification 14] In one embodiment, an example in which the light-emitting element 12 is an OLED element has been described. However, the light-emitting element 12 is not limited to this example, and may be, for example, an LED (Light Emitting Diode) element, a quantum dot light-emitting diode (QLED) element, or a self-emissive light-emitting element such as a semiconductor laser element. Two or more types of light-emitting elements may be provided in the display device 101.

[0135] [Modification 15] In one embodiment, an example was described in which the cover glass 20 is a sealing layer that seals the display surface side, but the sealing layer is not limited to this example. For example, the display device 101 may have a protective layer instead of the cover glass 20. In this case, the filling resin layer 19 may or may not be provided.

[0136] The protective layer may be an inorganic layer formed by vacuum deposition technology, or an organic layer (coating layer) formed by coating with a resin composition. The inorganic layer may be, for example, a chemically deposited film formed by CVD. The protective layer may include, for example, at least one of an inorganic material and an organic material. The organic material may include, for example, at least one curable resin, such as a thermosetting resin and an ultraviolet curable resin. Preferably, the protective layer is composed of a hard coat layer. This can improve the scratch resistance, weather resistance, and other properties of the display device 101.

[0137] The hard coat layer includes, for example, an ultraviolet-curable resin. The ultraviolet-curable resin includes, for example, at least one selected from the group consisting of radical polymerization type ultraviolet-curable resins and cationic polymerization type ultraviolet-curable resins. The ultraviolet-curable resin may optionally contain known additives. Specifically, the ultraviolet-curable resin may include, for example, an acrylic ultraviolet-curable resin.

[0138] [Other Modifications] Although one embodiment of the present disclosure and its modifications (hereinafter referred to as "Embodiment, etc.") have been described in detail above, the present disclosure is not limited to Embodiment, etc., and various modifications based on the technical idea of ​​the present disclosure are possible.

[0139] For example, the configurations, methods, processes, shapes, materials, and numerical values ​​listed in one embodiment are merely examples, and different configurations, methods, processes, shapes, materials, and numerical values ​​may be used as needed.

[0140] The configuration, methods, processes, shapes, materials, and numerical values ​​of one embodiment, etc., can be combined with each other without departing from the spirit of this disclosure.

[0141] Unless otherwise specified, the materials exemplified in one embodiment, etc., can be used individually or in combination of two or more types.

[0142] Furthermore, the present disclosure may also adopt the following configurations: (1) A display device comprising: an organic material-containing layer connected between adjacent light-emitting elements and including an organic light-emitting layer; a plurality of first electrodes provided on one side of the organic material-containing layer for each light-emitting element; a second electrode provided on the other side of the organic material-containing layer; an insulating layer containing a silicon compound provided between adjacent light-emitting elements and covering the peripheral edge of each of the first electrodes; and a low dielectric constant member provided between the peripheral edge of each of the first electrodes and the insulating layer, having a dielectric constant lower than that of the insulating layer. (2) The display device according to (1), wherein the low dielectric constant member includes at least one selected from the group consisting of carbon-containing silicon oxide, silane-based materials, and porous materials. (3) The display device according to (1) or (2), wherein the silicon compound includes a silicon nitride-based material. (4) The display device according to (3), wherein the silicon nitride-based material includes at least one selected from the group consisting of silicon nitride, silicon carbonitride, and silicon oxynitride. (5) The display device according to any one of (1) to (4), wherein the insulating layer is positively charged. (6) The display device according to any one of (1) to (5), wherein the insulating layer comprises an insulating layer body containing the silicon compound and a surface layer provided between the insulating layer body and the organic material-containing layer and containing silicon oxide. (7) The display device according to any one of (1) to (6), further comprising an intermediate layer provided between the first electrode and the low dielectric constant member and containing silicon oxide. (8) The display device according to any one of (1) to (6), wherein the low dielectric constant member includes a low dielectric constant layer having a dielectric constant lower than the dielectric constant of the insulating layer. (9) The display device according to (8), wherein the low dielectric constant layer has an opening inward from the periphery of the first electrode in a plan view, and the insulating layer covers the side surface of the opening. (10) The display device according to (8), wherein the insulating layer has a first opening located inward from the periphery of the first electrode in a plan view, and the low dielectric constant layer has a second opening located inward from the first opening in a plan view, and the first and second openings constitute a stepped structure.(11) The display device according to (8), further comprising an intermediate layer containing silicon oxide, provided between the first electrode and the low dielectric constant layer, wherein the insulating layer has a first opening inward of the periphery of the first electrode in a plan view, the low dielectric constant layer has a second opening inward of the first opening in a plan view, the intermediate layer has a third opening inward of the second opening in a plan view, and the first opening, the second opening and the third opening constitute a stepped structure. (12) The display device according to any one of (1) to (6), wherein the low dielectric constant member includes a plurality of low dielectric constant structures arranged in the in-plane direction of the first electrode and having a dielectric constant lower than the dielectric constant of the insulating layer. (13) The display device according to (12), wherein the plurality of low dielectric constant structures have a dot-like or concentric shape in a plan view. (14) The display device according to (12) or (13), further comprising an intermediate layer containing silicon oxide, wherein at least a portion of the plurality of low dielectric constant structures are provided within the intermediate layer. (15) The display device according to (14), wherein the insulating layer has an opening inward from the periphery of the first electrode in a plan view, and a portion of the plurality of low dielectric constant structures protrudes from the opening in a plan view, forming a stepped structure. (16) A display device comprising: an organic material-containing layer connected between adjacent light-emitting elements and including an organic light-emitting layer; a plurality of first electrodes provided on one side of the organic material-containing layer for each of the light-emitting elements; a second electrode provided on the other side of the organic material-containing layer; and an insulating layer containing a silicon compound provided between adjacent light-emitting elements and covering the periphery of each of the first electrodes, wherein the insulating layer includes a plurality of low dielectric constant structures having a dielectric constant lower than the dielectric constant of the insulating layer, and the plurality of low dielectric constant structures are arranged in the in-plane direction of the first electrode in the portion that covers the periphery of each of the first electrodes. (17) The display device according to (16), wherein the insulating layer has an opening inward from the periphery of the first electrode in a plan view, and a portion of the plurality of low dielectric constant structures protrudes from the opening in a plan view, forming a stepped structure.(18) The display device according to (16) or (17), wherein the tops of the plurality of low dielectric constant structures are separated from the surface of the insulating layer that is on the side of the organic material-containing layer. (19) An electronic device comprising the display device according to any one of (1) to (18).

[0143] <4. Simulations> The following will explain the disclosure in detail using simulations, but the disclosure is not limited to these simulations.

[0144] The analysis models 1 and 2 used in the simulation will be described with reference to Figures 19A and 19B. In analysis models 1 and 2, the same reference numerals are used for parts corresponding to the display device 101 according to one embodiment.

[0145] (Analysis Model 1) Figure 19A shows the configuration of analysis model 1. Analysis model 1 was created to correspond to the display device 101 according to one embodiment. The thicknesses of the OLED layer 122, insulating layer 13, low dielectric constant layer 14, and intermediate layer 15 were set as follows: Thickness of OLED layer 122: 65 nm Thickness of insulating layer 13: 15 nm Thickness of low dielectric constant layer 14: 10 nm Thickness of intermediate layer 15: 10 nm The dielectric constant of the insulating layer 13 was set to the dielectric constant when a SiN layer is used as the insulating layer 13. The dielectric constant of the low dielectric constant layer was set to 3.5. The dielectric constant of the intermediate layer 15 was set to the dielectric constant when a SiO layer is used as the intermediate layer 15.

[0146] (Analysis Model 2) Figure 19B shows the configuration of Analysis Model 1. Analysis Model 2 was created which is the same as Analysis Model 1 except that a low dielectric constant layer 14 is not provided between the intermediate layer 15 and the insulating layer 13.

[0147] [Simulation 1] The potential with respect to distance from the first electrode (anode) 121 was determined by a potential simulation of analysis model 1 (a simulation that calculates the electrostatic potential fluctuation due to charge in the dielectric structure).

[0148] [Simulation 2] The potential with respect to distance from the first electrode (anode) 121 was determined by a potential simulation related to analysis model 1.

[0149] [Results of Simulations 1 and 2] Figure 20 is a graph showing the results of Simulations 1 and 2. The following can be seen from Figure 20. That is, by providing a low dielectric constant layer 14 between the intermediate layer 15 and the insulating layer 13, the potential (electric potential) at the interface between the insulating layer 13 and the OLED layer 122 can be reduced. Therefore, the light emission of the OLED layer 122 near the opening 13a of the insulating layer 13 can be suppressed, and the luminous efficiency of the display device 101 can be improved.

[0150] <5 Relationship between normals passing through the centers of the light-emitting part, lens member, and wavelength-selecting part> The relationship between the normal LN passing through the center of the light-emitting part, the normal LN' passing through the center of the lens member, and the normal LN'' passing through the center of the wavelength-selecting part will be explained below. Here, the light-emitting part is, for example, a light-emitting element 12 (see, for example, Figure 18). The lens member is, for example, a lens 221 (see, for example, Figure 18). The wavelength-selecting part is, for example, a colored layer 181 (see, for example, Figure 18).

[0151] Furthermore, the size of the wavelength selector may be appropriately changed in accordance with the light emitted from the light-emitting unit, and if a light-absorbing unit (e.g., a black matrix unit) is provided between the wavelength selector units of adjacent light-emitting units, the size of the light-absorbing unit may be appropriately changed in accordance with the light emitted from the light-emitting unit. In addition, the size of the wavelength selector may be determined by the distance (offset amount) d between the normal vector passing through the center of the light-emitting unit and the normal vector passing through the center of the wavelength selector unit. 0 Depending on the circumstances, it may be changed as appropriate. The planar shape of the wavelength selection section may be the same as, similar to, or different from the planar shape of the lens element.

[0152] The following explanation will describe the relationship between the normals passing through the centers of the light-emitting unit 51, the wavelength-selecting unit 52, and the lens member 53 when they are arranged in this order, with reference to Figures 21A, 21B, 21C, and 22.

[0153] As shown in Figure 21A, the normal LN passing through the center of the light-emitting section 51, the normal LN'' passing through the center of the wavelength selection section 52, and the normal LN' passing through the center of the lens member 53 may coincide. That is, D 0 = 0, d 0 It may also be 0. However, D 0 This represents the distance (offset amount) between the normal LN passing through the center of the light-emitting part 51 and the normal LN' passing through the center of the lens member 53, and d 0 This represents the distance (offset amount) between the normal LN passing through the center of the light-emitting section 51 and the normal LN'' passing through the center of the wavelength selection section 52.

[0154] As shown in Figure 21B, the normal vector LN passing through the center of the light-emitting section 51 and the normal vector LN'' passing through the center of the wavelength-selecting section 52 coincide, but the normal vector LN passing through the center of the light-emitting section 51 and the normal vector LN'' passing through the center of the wavelength-selecting section 52 may not coincide with the normal vector LN' passing through the center of the lens member 53. That is, D 0 > 0, d 0 It may also be equal to 0.

[0155] As shown in Figure 21C, the normal vector LN passing through the center of the light-emitting section 51 does not coincide with the normal vector LN'' passing through the center of the wavelength-selecting section 52 and the normal vector LN' passing through the center of the lens member 53, but the normal vector LN'' passing through the center of the wavelength-selecting section 52 and the normal vector LN' passing through the center of the lens member 53 may coincide. That is, D 0 > 0, d 0 > 0, D 0 = d 0 That's fine.

[0156] As shown in Figure 22, the normal vector LN passing through the center of the light-emitting section 51, the normal vector LN'' passing through the center of the wavelength selection section 52, and the normal vector LN' passing through the center of the lens member 53 may not all coincide. That is, D 0 > 0, d 0 > 0, D 0 ≠d 0This is also acceptable. Here, it is preferable that the center of the wavelength selection unit 52 (the position indicated by the black square in Figure 22) is located on the straight line LL connecting the center of the light-emitting unit 51 and the center of the lens member 53 (the position indicated by the black circle in Figure 22). Specifically, the distance between the center of the light-emitting unit 51 and the center of the wavelength selection unit 52 in the thickness direction (vertical direction in Figure 22) is LL. 1 The distance in the thickness direction between the center of the wavelength selection section 52 and the center of the lens member 53 is LL 2 In that case, D 0 >d 0 > 0, and considering manufacturing variations, d 0 : D 0 =LL 1 : (LL 1 +LL 2 It is preferable that the following conditions are satisfied. Here, the thickness direction refers to the thickness direction of the light-emitting part 51, the wavelength-selecting part 52, and the lens member 53.

[0157] The following explanation will describe the relationship between the normals passing through the centers of the light-emitting unit 51, the lens member 53, and the wavelength selection unit 52 when they are arranged in this order, with reference to Figures 23A, 23B, and 24.

[0158] As shown in Figure 23A, the normal vector LN passing through the center of the light-emitting section 51, the normal vector LN'' passing through the center of the wavelength selection section 52, and the normal vector LN' passing through the center of the lens member 53 may be configured to coincide. That is, D 0 > 0, d 0 It may also be equal to 0.

[0159] As shown in Figure 23B, the normal vector LN passing through the center of the light-emitting section 51 does not coincide with the normal vector LN'' passing through the center of the wavelength-selecting section 52 and the normal vector LN' passing through the center of the lens member 53, but the normal vector LN'' passing through the center of the wavelength-selecting section 52 and the normal vector LN' passing through the center of the lens member 53 may coincide. That is, D 0 > 0, d 0 > 0, D 0 = d 0 That's fine.

[0160] As shown in FIG. 24, the normal line LN passing through the center of the light emitting portion 51, the normal line LN” passing through the center of the wavelength selection portion 52, and the normal line LN’ passing through the center of the lens member 53 may all be configured not to coincide. Here, it is preferable that the center of the lens member 53 (the position indicated by the black circle in FIG. 24) is located on the straight line LL connecting the center of the light emitting portion 51 and the center of the wavelength selection portion 52 (the position indicated by the black square in FIG. 24). Specifically, the distance in the thickness direction (the vertical direction in FIG. 24) between the center of the light emitting portion 51 and the center of the lens member 53 is LL 2 , and the distance in the thickness direction between the center of the lens member 53 and the center of the wavelength selection portion 52 is LL 1 . When this is the case, d 0 > D 0 > 0, and considering the manufacturing variations, D 0 : d 0 = LL 2 : (LL 1 + LL 2 ) is preferably satisfied. Here, the thickness direction represents the thickness direction of the light emitting portion 51, the wavelength selection portion 52, and the lens member 53.

[0161] <6 Example of resonator structure> The subpixel 10 included in the display device 101 according to one embodiment and the display device 101 according to a modified example thereof (hereinafter referred to as "the display device 101 etc. according to one embodiment") can be configured to include a resonator structure that resonates the light generated by the light emitting element 12. Hereinafter, the resonator structure will be described with reference to the drawings. In the following description, the first surface of each layer may be referred to as the upper surface.

[0162] (Resonator structure: First example) FIG. 25A is a schematic cross-sectional view for explaining the first example of the resonator structure. In the following description, when the light emitting elements provided corresponding to the subpixels 10R, 10G, and 10B are not particularly distinguished and collectively referred to, those light emitting elements may be referred to as the light emitting element 12. When distinguishing the light emitting elements provided corresponding to the subpixels 10R, 10G, and 10B, those light emitting elements are the light emitting elements 12 R , 12 G , 12 BThere is such a case. The portions of the OLED layer 122 corresponding to the sub-pixels 10R, 10G, and 10B are the OLED layer 122 R the OLED layer 122 G the OLED layer 122 B There is such a case.

[0163] In the first example, the first electrode 121 is formed with a common film thickness in each light-emitting element 12. The same applies to the second electrode 123.

[0164] Below the first electrode 121 of the light-emitting element 12, a reflector 71 is disposed with an optical adjustment layer 72 interposed therebetween. A resonator structure for resonating the light generated by the OLED layer 122 is formed between the reflector 71 and the second electrode 123. In the following description, the optical adjustment layers 72 provided corresponding to the sub-pixels 10R, 10G, and 10B are referred to as the optical adjustment layer 72 R 72 G 72 B There is such a case.

[0165] The reflector 71 is formed with a common film thickness in each light-emitting element 12. The film thickness of the optical adjustment layer 72 varies according to the color to be displayed by the sub-pixel. The optical adjustment layer 72 R 72 G 72 B By having different film thicknesses, an optical distance that optimally resonates with the wavelength of light corresponding to the color to be displayed can be set.

[0166] In the example shown in FIG. 25A, the upper surfaces of the reflectors 71 in the light-emitting elements 12 R 12 G 12 B are arranged to be flush. As described above, since the film thickness of the optical adjustment layer 72 varies according to the color to be displayed by the sub-pixel, the position of the upper surface of the second electrode 123 differs according to the type of the light-emitting elements 12 R 12 G 12 B .

[0167] The reflector 71 can be formed using, for example, a metal such as aluminum (Al), silver (Ag), copper (Cu), or an alloy having these as main components.

[0168] The optical adjustment layer 72 is made of silicon nitride (SiN x ), silicon oxide (SiO x ), silicon oxynitride (SiO x N y It can be constructed using inorganic insulating materials such as ) or organic resin materials such as acrylic resins or polyimide resins. The optical adjustment layer 72 may be a single layer or a laminated film of multiple materials. The number of layers may also differ depending on the type of light-emitting element 12.

[0169] The first electrode 121 can be formed using a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO).

[0170] The second electrode 123 needs to function as a semi-transparent reflective film. The second electrode 123 can be formed using magnesium (Mg), silver (Ag), or a magnesium-silver alloy (MgAg) mainly composed of these, or an alloy containing alkali metals or alkaline earth metals.

[0171] (Resonator structure: Second example) Figure 25B is a schematic cross-sectional view illustrating a second example of a resonator structure.

[0172] In the second example as well, the first electrode 121 and the second electrode 123 are formed with a common film thickness in each light-emitting element 12.

[0173] In the second example as well, a reflector 71 is placed below the first electrode 121 of the light-emitting element 12, with an optical adjustment layer 72 in between. A resonator structure is formed between the reflector 71 and the second electrode 123 to resonate the light generated by the OLED layer 122. Similar to the first example, the reflector 71 is formed with a common film thickness in each light-emitting element 12, while the film thickness of the optical adjustment layer 72 differs according to the color that the sub-pixel should display.

[0174] In the first example shown in Figure 25A, the light-emitting element 12 R , 12 G , 12 B The upper surfaces of the reflectors 71 are arranged to be aligned, and the position of the upper surface of the second electrode 123 is such that the light-emitting element 12 R , 12 G, 12 B It varied depending on the type.

[0175] In contrast, in the second example shown in Figure 25B, the upper surface of the second electrode 123 is the light-emitting element 12 R , 12 G , 12 B They are arranged so that they are aligned. In order to align the upper surface of the second electrode 123, the light-emitting element 12 R , 12 G , 12 B In this configuration, the upper surface of the reflector 71 is the light-emitting element 12 R , 12 G , 12 B They are arranged differently depending on the type. For this reason, the lower surface of the reflector 71 (in other words, the upper surface of the base layer (insulating layer) 73) has a stepped shape corresponding to the type of light-emitting element 12.

[0176] The materials and other components constituting the reflector 71, the optical adjustment layer 72, the first electrode 121, and the second electrode 123 are the same as those described in the first example, so their explanation will be omitted.

[0177] (Resonator Structure: Third Example) Figure 26A is a schematic cross-sectional view illustrating the third example of a resonator structure. In the following description, the reflectors 71 provided corresponding to the sub-pixels 10R, 10G, and 10B will be referred to as the reflectors 71 R , 71 G , 71 B That happens.

[0178] In the third example as well, the first electrode 121 and the second electrode 123 are formed with a common film thickness in each light-emitting element 12.

[0179] In the third example, the reflector 71 is positioned below the first electrode 121 of the light-emitting element 12, with the optical adjustment layer 72 in between. A resonator structure is formed between the reflector 71 and the second electrode 123 to resonate the light generated by the OLED layer 122. Similar to the first and second examples, the thickness of the optical adjustment layer 72 varies depending on the color that the subpixel should display. And, similar to the second example, the position of the upper surface of the second electrode 123 is relative to the light-emitting element 12 R , 12 G , 12 B They are arranged so that they are aligned.

[0180] In the second example shown in Figure 26B, the lower surface of the reflector 71 was stepped in a shape corresponding to the type of light-emitting element 12, in order to align the upper surface of the second electrode 123.

[0181] In contrast, in the third example shown in Figure 26A, the film thickness of the reflector 71 is equal to the film thickness of the light-emitting element 12 R , 12 G , 12 B It is set differently depending on the type. More specifically, reflector 71 R , 71 G , 71 B The film thickness is set so that the bottom surfaces are aligned.

[0182] The materials and other components constituting the reflector 71, the optical adjustment layer 72, the first electrode 121, and the second electrode 123 are the same as those described in the first example, so their explanation will be omitted.

[0183] (Resonator Structure: Fourth Example) Figure 26B is a schematic cross-sectional view illustrating the fourth example of a resonator structure. In the following description, the first electrode 121 provided corresponding to the sub-pixels 10R, 10G, and 10B will be referred to as the first electrode 121 R , 121 G , 121 B That happens.

[0184] In the first example shown in Figure 26A, the first electrode 121 and the second electrode 123 of each light-emitting element 12 are formed with a common film thickness. A reflector 71 is placed below the first electrode 121 of the light-emitting element 12, with an optical adjustment layer 72 in between.

[0185] In contrast, in the fourth example shown in Figure 26B, the optical adjustment layer 72 is omitted, and the film thickness of the first electrode 121 is reduced to the light-emitting element 12 R , 12 G , 12 B The settings varied depending on the type.

[0186] The reflector 71 is formed with a common film thickness for each light-emitting element 12. The film thickness of the first electrode 121 differs depending on the color that the sub-pixel should display. R , 121 G , 121B By having different film thicknesses, it is possible to set the optical distance that produces the optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0187] The materials and other components constituting the reflector 71, the optical adjustment layer 72, the first electrode 121, and the second electrode 123 are the same as those described in the first example, so their explanation will be omitted.

[0188] (Resonator structure: Fifth example) Figure 27A is a schematic cross-sectional view illustrating the fifth example of a resonator structure.

[0189] In the first example shown in Figure 25A, the first electrode 121 and the second electrode 123 are formed with a common film thickness in each light-emitting element 12. A reflector 71 is placed below the first electrode 121 of the light-emitting element 12, with an optical adjustment layer 72 in between.

[0190] In contrast, in the fifth example shown in Figure 27A, the optical adjustment layer 72 is omitted, and instead, an oxide film 74 is formed on the surface of the reflector 71. The thickness of the oxide film 74 is such that the light-emitting element 12 R , 12 G , 12 B The settings were configured differently depending on the type. In the following description, the oxide film 74 provided in correspondence with the sub-pixels 10R, 10G, and 10B is referred to as oxide film 74 R , 74 G , 74 B That happens.

[0191] The thickness of the oxide film 74 varies depending on the color that the sub-pixel should display. Oxide film 74 R , 74 G , 74 B By having different film thicknesses, it is possible to set the optical distance that produces the optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0192] The oxide film 74 is a film obtained by oxidizing the surface of the reflector 71, and is composed of, for example, aluminum oxide, tantalum oxide, titanium oxide, magnesium oxide, zirconium oxide, etc. The oxide film 74 functions as an insulating film for adjusting the optical path length (optical distance) between the reflector 71 and the second electrode 123.

[0193] Light-emitting element 12 R , 12 G , 12 B The oxide film 74, which has different thicknesses depending on the type, can be formed, for example, as follows.

[0194] First, the container is filled with electrolyte, and the substrate on which the reflector 71 is formed is immersed in the electrolyte. Electrodes are then positioned opposite the reflector 71.

[0195] Then, a positive voltage is applied to the reflector 71 with the electrode as the reference, and the reflector 71 is anodized. The thickness of the oxide film due to anodizing is proportional to the voltage value relative to the electrode. R , 71 G , 71 B Anodizing is performed on each of the light-emitting elements 12 while applying a voltage corresponding to the type of light-emitting element 12. This makes it possible to form oxide films 74 of different thicknesses all at once.

[0196] The materials and other components constituting the reflector 71, the first electrode 121, and the second electrode 123 are the same as those described in the first example, so their explanation will be omitted.

[0197] (Resonator structure: 6th example) Figure 27B is a schematic cross-sectional view illustrating the 6th example of a resonator structure.

[0198] In the sixth example, the light-emitting element 12 is constructed by stacking a first electrode 121, an OLED layer 122, and a second electrode 123. However, in the sixth example, the first electrode 121 is formed to serve both as an electrode and a reflector. The first electrode (and reflector) 121 is the light-emitting element 12 R , 12 G , 12 B It is formed from a material having optical constants selected according to the type. By having different phase shifts due to the first electrode (which also serves as a reflector) 121, it is possible to set the optical distance that produces the optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0199] The first electrode (and reflector) 121 can be made from a single metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu), or an alloy mainly composed of these metals. For example, the light-emitting element 12 R First electrode (also serving as reflector) 121 R The element 12 is formed from copper (Cu). G First electrode (also serving as reflector) 121 G and light-emitting element 12 B First electrode (also serving as reflector) 121 B The structure can be such that the two parts are formed from aluminum.

[0200] The materials and other components constituting the second electrode 123 are the same as those described in the first example, so their explanation will be omitted.

[0201] (Resonator structure: 7th example) Figure 28 is a schematic cross-sectional view illustrating the 7th example of a resonator structure.

[0202] The seventh example is basically a light-emitting element 12 R , 12 G For this, the sixth example is applied, and the light-emitting element 12 B This configuration applies the first example. In this configuration as well, it is possible to set the optical distance that produces the optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0203] Light-emitting element 12 R , 12 G First electrode (also serves as a reflector) 121 used in R , 121 G These can be composed of elemental metals such as aluminum (Al), silver (Ag), gold (Au), and copper (Cu), or alloys in which these are the main components.

[0204] Light-emitting element 12 B Reflector 71 used in B , optical adjustment layer 72 B and the first electrode 121 B The materials and other components that make up this are the same as those described in the first example, so we will omit the explanation.

[0205] <7 Application Examples> (Electronic Devices) The display device 101, etc. according to one embodiment may be provided in various electronic devices. The display device 101, etc. according to one embodiment is particularly suitable for eyewear devices such as head-mounted displays, or for electronic viewfinders of video cameras or single-lens reflex cameras, etc., which require high resolution and are used magnified close to the eyes.

[0206] (Specific Example 1) Figures 29A and 29B show an example of the external appearance of a digital still camera 310. This digital still camera 310 is a single-lens reflex type with interchangeable lenses, and has an interchangeable shooting lens unit (interchangeable lens) 312 located approximately in the center of the front of the camera body 311, and a grip portion 313 for the photographer to hold on the left side of the front.

[0207] A monitor 314 is provided on the back of the camera body 311, slightly to the left of the center. An electronic viewfinder (eyepiece) 315 is provided above the monitor 314. The photographer can determine the composition by looking through the electronic viewfinder 315 and visually confirming the light image of the subject guided by the shooting lens unit 312. The electronic viewfinder 315 includes one of the display devices 101, etc., according to one embodiment.

[0208] (Specific Example 2) Figure 30 shows an example of the appearance of a head-mounted display 320. The head-mounted display 320 is an example of an eyewear device. The head-mounted display 320 has, for example, a glasses-shaped display unit 321 and ear hooks 322 on both sides for attachment to the user's head. The display unit 321 includes one of the display devices 101, etc., according to one embodiment.

[0209] (Specific Example 3) Figure 31 shows an example of the appearance of a television device 330. This television device 330 has, for example, a video display screen section 331 including a front panel 332 and a filter glass 333, and this video display screen section 331 includes one of the display devices 101, etc., according to one embodiment.

[0210] (Specific Example 4) Figure 32 shows an example of the appearance of the see-through head-mounted display 340. The see-through head-mounted display 340 is an example of an eyewear device. The see-through head-mounted display 340 comprises a main body 341, an arm 342, and a lens barrel 343.

[0211] The main body 341 is connected to the arm 342 and the eyeglasses 350. Specifically, the long end of the main body 341 is connected to the arm 342, and one side of the main body 341 is connected to the eyeglasses 350 via a connecting member. The main body 341 may also be directly attached to the head of a person.

[0212] The main body 341 houses a control board for controlling the operation of the see-through head-mounted display 340, as well as a display unit. The arm 342 connects the main body 341 to the lens barrel 343 and supports the lens barrel 343. Specifically, the arm 342 is connected to the end of the main body 341 and the end of the lens barrel 343, respectively, to fix the lens barrel 343 in place. The arm 342 also houses signal lines for communicating image-related data provided from the main body 341 to the lens barrel 343.

[0213] The microscope tube 343 projects image light, provided from the main body 341 via the arm 342, through the eyepiece 351 towards the eyes of the user wearing the see-through head-mounted display 340. In this see-through head-mounted display 340, the display unit of the main body 341 includes one of the display devices 101, etc., according to one embodiment.

[0214] (Specific Example 5) Figure 33 shows an example of the appearance of a smartphone 360. The smartphone 360 ​​includes a display unit 361 that displays various information, and an operation unit 362 consisting of buttons, etc., that accept user input. The display unit 361 includes one of the display devices 101, etc., according to one embodiment.

[0215] (Specific example 6) The display device 101, etc. according to one embodiment may be provided on various displays installed in a vehicle.

[0216] Figures 34A and 34B show examples of the internal configuration of a vehicle 500 equipped with various displays. Specifically, Figure 34A shows an example of the interior of the vehicle 500 from the rear to the front, and Figure 34B shows an example of the interior of the vehicle 500 from diagonally rear to diagonally front.

[0217] The vehicle 500 includes a center display 501, a console display 502, a head-up display 503, a digital rear mirror 504, a steering wheel display 505, and a rear entertainment display 506. At least one of these displays includes one of the display devices 101, etc., according to one embodiment. For example, all of these displays may include one of the display devices 101, etc., according to one embodiment.

[0218] The center display 501 is located on the dashboard facing the driver's seat 508 and the passenger seat 509. Figures 34A and 34B show an example of a horizontally elongated center display 501 extending from the driver's seat 508 to the passenger seat 509, but the screen size and location of the center display 501 are arbitrary. The center display 501 can display information detected by various sensors. As a specific example, the center display 501 can display images captured by an image sensor, distance images to obstacles in front of and to the side of the vehicle 500 measured by a ToF sensor, and the body temperature of passengers detected by an infrared sensor. The center display 501 can be used to display at least one of the following: safety-related information, operation-related information, life logs, health-related information, authentication / identification-related information, and entertainment-related information.

[0219] Safety-related information includes information such as drowsiness detection, distraction detection, detection of mischief by a passenger, seatbelt fastening status, and detection of an unattended occupant, and is detected by sensors, for example, those placed on top of the back of the center display 501. Operation-related information is detected by sensing occupant gestures using sensors. The detected gestures may include the operation of various equipment within the vehicle 500. For example, the operation of air conditioning equipment, navigation system, AV equipment, lighting equipment, etc. is detected. Lifelogs include the lifelogs of all occupants. For example, lifelogs include records of each occupant's actions while riding. By acquiring and saving lifelogs, it is possible to confirm the state of the occupants at the time of an accident. Health-related information is detected by sensing the occupant's body temperature using sensors such as temperature sensors, and inferring the occupant's health status based on the detected body temperature. Alternatively, the occupant's face may be captured using an image sensor, and the occupant's health status may be inferred from the captured facial expression. Furthermore, the system may engage in automated voice conversations with the occupants and infer their health status based on their responses. Authentication / identification-related information includes keyless entry functions that use sensors for facial recognition, and functions that automatically adjust seat height and position based on facial recognition. Entertainment-related information includes functions that use sensors to detect information on how the occupants operate the AV equipment, and functions that use sensors to recognize the occupants' faces and provide content suitable for the occupants through the AV equipment.

[0220] The console display 502 can be used, for example, to display life log information. The console display 502 is located near the shift lever 511 on the center console 510 between the driver's seat 508 and the passenger seat 509. The console display 502 can also display information detected by various sensors. In addition, the console display 502 may display images of the area around the vehicle captured by an image sensor, or it may display distance images to obstacles around the vehicle.

[0221] The head-up display 503 is virtually displayed behind the windshield 512 in front of the driver's seat 508. The head-up display 503 can be used to display, for example, at least one of safety-related information, operation-related information, life logs, health-related information, authentication / identification-related information, and entertainment-related information. Because the head-up display 503 is often virtually positioned in front of the driver's seat 508, it is suitable for displaying information directly related to the operation of the vehicle 500, such as the speed of the vehicle 500 or the fuel (battery) level.

[0222] The digital rearview mirror 504 can not only display the area behind the vehicle 500, but also display the situation of the passengers in the rear seat. By placing a sensor on top of the back of the digital rearview mirror 504, it can be used, for example, to display life log information.

[0223] The steering wheel display 505 is positioned near the center of the steering wheel 513 of the vehicle 500. The steering wheel display 505 can be used to display at least one of the following: safety-related information, operation-related information, life log, health-related information, authentication / identification-related information, and entertainment-related information. In particular, because the steering wheel display 505 is located near the driver's hands, it is suitable for displaying life log information such as the driver's body temperature, or information related to the operation of AV equipment, air conditioning equipment, etc.

[0224] The rear entertainment display 506 is mounted on the back of the driver's seat 508 and the passenger seat 509, and is intended for viewing by rear-seat passengers. The rear entertainment display 506 can be used to display at least one of the following: safety-related information, operation-related information, life logs, health-related information, authentication / identification-related information, and entertainment-related information. In particular, because the rear entertainment display 506 is in front of the rear-seat passengers, it displays information relevant to them. For example, it may display information related to the operation of AV equipment or air conditioning equipment, or it may display the results of temperature sensor measurements of rear-seat passengers' body temperature, etc.

[0225] A sensor may be placed on the back side of the display device 101, etc., to measure the distance to surrounding objects. Optical distance measurement methods can be broadly divided into passive and active types. Passive methods measure distance by receiving light from an object without projecting light from the sensor onto the object. Passive methods include the lens focus method, stereo method, and monocular method. Active methods measure distance by projecting light onto an object and receiving the reflected light from the object with a sensor. Active methods include the optical radar method, active stereo method, illuminance difference stereo method, moiré topography method, and interferometry method. The display device 101, etc. according to one embodiment can be applied to any of these distance measurement methods. By using a sensor placed on the back side of the display device 101, etc. according to one embodiment, the above-described passive or active distance measurement can be performed.

[0226] 10R, 10G, 10B Sub-pixel 10P Single pixel 11 Driving substrate 111 Substrate 112 Insulating layer 113 Pad portion 12 Light-emitting element 121 First electrode 122 OLED layer 123 Second electrode 13, 130 Insulating layer 131 Bulk layer 132 Surface layer 133 Covering portion 134 Protrusion 14 Low dielectric constant layer 15 Intermediate layer 13a, 14a, 15a Aperture 13b, 14b, 15b Inter-pixel portion 13c, 14c, 15c Side wall portion 13d, 14d, 15d Protruding portion 16 Protective layer 17 Planarization layer 18 Color filter 181R, 181G, 181B Coloring layer 19 Filling resin layer 20 Cover glass 21 Low dielectric constant structure 22 Lens array 221 Lens 101 Display device 310 Digital still camera 320 Head-mounted display 330 Television equipment 340 See-through head-mounted display 360 Smartphone 500 Vehicle U Single-layer light-emitting unit U1, U2 Two-layer light-emitting unit RE1 Display area RE2 Peripheral area

Claims

1. A display device comprising: an organic material-containing layer connected between adjacent light-emitting elements and including an organic light-emitting layer; a plurality of first electrodes provided on one side of the organic material-containing layer for each light-emitting element; a second electrode provided on the other side of the organic material-containing layer; an insulating layer containing a silicon compound provided between adjacent light-emitting elements and covering the peripheral edge of each first electrode; and a low dielectric constant member provided between the peripheral edge of each first electrode and the insulating layer, having a dielectric constant lower than that of the insulating layer.

2. The display device according to claim 1, wherein the low dielectric constant member includes at least one selected from the group consisting of carbon-containing silicon oxide, silane-based materials, and porous materials.

3. The display device according to claim 1, wherein the silicon compound includes a silicon nitride-based material.

4. The display device according to claim 3, wherein the silicon nitride-based material comprises at least one selected from the group consisting of silicon nitride, silicon carbonitride, and silicon oxynitride.

5. The display device according to claim 1, wherein the insulating layer is positively charged.

6. The display device according to claim 1, wherein the insulating layer comprises an insulating layer body containing the silicon compound and a surface layer provided between the insulating layer body and the organic matter-containing layer and containing silicon oxide.

7. The display device according to claim 1, further comprising an intermediate layer containing silicon oxide, provided between the first electrode and the low dielectric constant member.

8. The display device according to claim 1, wherein the low dielectric constant member includes a low dielectric constant layer having a dielectric constant lower than that of the insulating layer.

9. The display device according to claim 8, wherein the low dielectric constant layer has an opening inward from the periphery of the first electrode in a plan view, and the insulating layer covers the side surface of the opening.

10. The display device according to claim 8, wherein the insulating layer has a first opening located inward from the periphery of the first electrode in a plan view, the low dielectric constant layer has a second opening located inward from the first opening in a plan view, and the first and second openings constitute a stepped structure.

11. The display device according to claim 8, further comprising an intermediate layer containing silicon oxide, provided between the first electrode and the low dielectric constant layer, wherein the insulating layer has a first opening inward from the periphery of the first electrode in a plan view, the low dielectric constant layer has a second opening inward from the first opening in a plan view, and the intermediate layer has a third opening inward from the second opening in a plan view, and the first opening, the second opening and the third opening constitute a stepped structure.

12. The display device according to claim 1, wherein the low dielectric constant member includes a plurality of low dielectric constant structures arranged in the in-plane direction of the first electrode and having a dielectric constant lower than that of the insulating layer.

13. The display device according to claim 12, wherein the plurality of low dielectric constant structures have a dot-like or concentric shape in a plan view.

14. The display device according to claim 12, further comprising an intermediate layer containing silicon oxide, wherein at least a portion of the plurality of low dielectric constant structures is provided within the intermediate layer.

15. The display device according to claim 14, wherein the insulating layer has an opening inward from the periphery of the first electrode in a plan view, and a portion of the plurality of low dielectric constant structures protrudes toward the opening in a plan view, forming a stepped structure.

16. A display device comprising: an organic material-containing layer connected between adjacent light-emitting elements and including an organic light-emitting layer; a plurality of first electrodes provided on one side of the organic material-containing layer for each light-emitting element; a second electrode provided on the other side of the organic material-containing layer; and an insulating layer containing a silicon compound provided between adjacent light-emitting elements and covering the peripheral edges of each of the first electrodes, wherein the insulating layer includes a plurality of low-dielectric-constant structures having a dielectric constant lower than the dielectric constant of the insulating layer, and the plurality of low-dielectric-constant structures are arranged in the in-plane direction of the first electrode in the portion covering the peripheral edge of each of the first electrodes.

17. The display device according to claim 16, wherein the insulating layer has an opening inward from the periphery of the first electrode in a plan view, and a portion of the plurality of low dielectric constant structures protrudes from the opening in a plan view, forming a stepped structure.

18. The display device according to claim 16, wherein the tops of the plurality of low dielectric constant structures are separated from the surface of the insulating layer that is on the side of the organic material-containing layer.

19. An electronic device comprising the display device described in claim 1.