Radio frequency switch and radio frequency chip

Abstract

The present application relates to the technical field of radio frequency switches. Provided are a radio frequency switch and a radio frequency chip. The radio frequency switch comprises a glass substrate, and a semiconductor layer, a first electrically-conductive layer and a second electrically-conductive layer, which are arranged in a direction away from the glass substrate, wherein the semiconductor layer comprises a plurality of semiconductor structures; the second electrically-conductive layer comprises a plurality of first interdigital electrode groups and a plurality of first thermally-conductive electrodes; the first thermally-conductive electrodes are located in a region between two adjacent first interdigital electrode groups; and the orthographic projection of a semiconductor pattern on the glass substrate overlaps the orthographic projection of the first interdigital electrode groups on the glass substrate. The radio frequency switch has a good heat dissipation performance and high reliability.

Description

RF switches and RF chips Technical Field

[0001] This application relates to the field of display technology, and in particular to a radio frequency switch and a radio frequency chip. Background Technology

[0002] Radio frequency switches can connect any one or more of multiple radio frequency signals through control logic to achieve switching between different model paths, including switching between receiving and transmitting, and switching between different frequency bands, so as to achieve the purpose of sharing antennas and saving terminal product costs.

[0003] However, the temperature of the RF switch increases with the increase of RF signal power, which can easily lead to overheating and damage to the RF switch. Summary of the Invention

[0004] The embodiments of this application adopt the following technical solutions:

[0005] In a first aspect, embodiments of this application provide a radio frequency switch, comprising:

[0006] Glass substrate;

[0007] A semiconductor layer, located on one side of the glass substrate, includes multiple semiconductor patterns;

[0008] The first conductive layer is located on the side of the semiconductor layer away from the glass substrate;

[0009] The second conductive layer is located on the side of the first conductive layer away from the glass substrate. The second conductive layer includes a plurality of first interdigital electrode groups and a plurality of first thermally conductive electrodes. The first thermally conductive electrodes are located in the region between two adjacent first interdigital electrode groups. The orthographic projection of the semiconductor pattern on the glass substrate overlaps with the orthographic projection of the first interdigital electrode group on the glass substrate.

[0010] In some embodiments of the radio frequency switch provided in this application, the first conductive layer further includes a plurality of second thermally conductive electrodes;

[0011] The orthographic projection of the second thermally conductive electrode on the glass substrate is located in the region between the orthographic projections of two adjacent first interdigital electrode groups on the glass substrate. The orthographic projection of the second thermally conductive electrode on the glass substrate overlaps with the orthographic projection of the first thermally conductive electrode on the glass substrate and the two are electrically connected together.

[0012] In some embodiments of the radio frequency switch provided in this application, the first interdigital electrode group includes a first electrode and a second electrode that are not connected to each other, and the first electrode, the second electrode and the first thermally conductive electrode have the same extension trend;

[0013] The second conductive layer includes a first connecting line and a second connecting line extending along a first direction. The first connecting line is used to electrically connect a plurality of first electrodes together, and the second connecting line is used to connect a plurality of second electrodes together.

[0014] On a plane parallel to the second conductive layer, the first electrode, the second electrode, and the first thermally conductive electrode are arranged sequentially along the first direction, which intersects with the extension trend of the first electrode.

[0015] In some embodiments of the radio frequency switch provided in this application, the first conductive layer further includes a plurality of second interdigital electrode groups, each second interdigital electrode group including a third electrode and a fourth electrode that are not connected to each other; the third electrode, the fourth electrode and the second thermally conductive electrode have the same extension trend;

[0016] Wherein, the orthographic projection of the third electrode on the glass substrate overlaps with the orthographic projection of the first electrode on the glass substrate and the two are electrically connected together; the orthographic projection of the fourth electrode on the glass substrate overlaps with the orthographic projection of the second electrode on the glass substrate and the two are electrically connected together.

[0017] In some embodiments of the radio frequency switch provided in this application, the first conductive layer further includes a third connecting line and a fourth connecting line extending along the first direction.

[0018] The distance between the axis of the third connecting line and the axis of the fourth connecting line is less than or equal to the distance between the axis of the first connecting line and the axis of the second connecting line.

[0019] In some embodiments of the radio frequency switch provided in this application, the third connecting line is used to connect each of the third electrodes, and the fourth connecting line is used to connect each of the fourth electrodes;

[0020] The orthographic projection of the third connecting line on the glass substrate overlaps with the orthographic projection of the first connecting line on the glass substrate, and the orthographic projection of the fourth connecting line on the glass substrate overlaps with the orthographic projection of the second connecting line on the glass substrate.

[0021] In some embodiments of the radio frequency switch provided in this application, the third connecting line is used to connect the first end of each of the second thermally conductive electrodes, and the fourth connecting line is used to connect the second end of each of the second thermally conductive electrodes.

[0022] The orthographic projection of the third connecting line on the glass substrate does not overlap with the orthographic projection of the first connecting line on the glass substrate, and the orthographic projection of the fourth connecting line on the glass substrate does not overlap with the orthographic projection of the second connecting line on the glass substrate.

[0023] In some embodiments of the radio frequency switch provided in this application, the orthographic projection of the first thermally conductive electrode on the glass substrate partially overlaps with the orthographic projections of the third connecting line and the fourth connecting line on the glass substrate.

[0024] In some embodiments of the radio frequency switch provided in this application, at least one first groove is provided on the glass substrate, the orthographic projection of the area enclosed by the outer contour of the first groove on the second conductive layer covers the first interdigitated electrode group, and the orthographic projection of the area enclosed by the outer contour of the first groove on the semiconductor layer covers the semiconductor pattern; the first groove is filled with a thermally conductive layer.

[0025] In some embodiments of the radio frequency switch provided in this application, at least one second groove is provided on the glass substrate, and the orthogonal projection of the area enclosed by the outer contour of the second groove on the second conductive layer covers the first thermally conductive electrode; the thermally conductive layer is filled in the second groove.

[0026] In some embodiments of the radio frequency switch provided in this application, the first groove and the second groove are connected.

[0027] In some embodiments of the radio frequency switch provided in this application, the radio frequency switch further includes at least one thermally conductive pattern, the thermally conductive pattern is located on the side of the first conductive layer away from the glass substrate, and the orthographic projection of the thermally conductive pattern on the glass substrate does not overlap with the orthographic projection of the first interdigital electrode group and the first thermally conductive electrode on the glass substrate;

[0028] The radio frequency switch further includes at least one first through hole, the orthographic projection of the area enclosed by the outer contour of at least one of the first groove and the second groove on the first conductive layer overlaps with the orthographic projection of the first through hole on the first conductive layer, and at least one of the first groove and the second groove communicates with the first through hole; the thermally conductive pattern communicates with the thermally conductive layer through the first through hole.

[0029] In some embodiments of the radio frequency switch provided in this application, the material of the thermally conductive pattern is a conductive material, and the thermally conductive pattern is disposed in the same layer as the second conductive layer.

[0030] In some embodiments of the radio frequency switch provided in this application, the material of the thermally conductive pattern is the same as the material of the thermally conductive layer.

[0031] In some embodiments of the radio frequency switch provided in this application, the radio frequency switch further includes a buffer layer, a gate insulating layer, and a passivation layer;

[0032] The buffer layer is located between the glass substrate and the semiconductor layer, the gate insulating layer is located on the side of the semiconductor layer away from the glass substrate, and the passivation layer is located between the first conductive layer and the second conductive layer.

[0033] In some embodiments of the present application, the radio frequency switch includes a diode, wherein one of the first electrode and the second electrode serves as the positive electrode of the diode, and the other serves as the negative electrode of the diode.

[0034] In some embodiments of the radio frequency switch provided in this application, the radio frequency switch further includes at least one capacitor and at least one inductor;

[0035] The first conductive layer further includes the first electrode plate of the capacitor and the first conductive structure of the inductor; the second conductive layer further includes the second electrode plate of the capacitor and the second conductive structure of the inductor.

[0036] The first electrode plate and the second electrode plate overlap; the first conductive structure and the second conductive structure are electrically connected to form the coil of the inductor.

[0037] Secondly, embodiments of this application provide a radio frequency chip, which includes a radio frequency switch as described in any one of the first aspects.

[0038] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, specific embodiments of this application are given below. Attached Figure Description

[0039] To more clearly illustrate the technical solutions in the embodiments of this application or related technologies, the drawings used in the description of the embodiments or prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0040] Figure 1A is a top view of a radio frequency switch in a related art according to an embodiment of this application;

[0041] Figure 1B is a schematic cross-sectional view of a radio frequency switch in a related art according to an embodiment of this application;

[0042] Figure 2 is a top view of the structure of the second conductive layer in a radio frequency switch according to an embodiment of this application;

[0043] Figures 3 and 4 are top view schematic diagrams of the stacked structure of the second conductive layer and semiconductor layer in two radio frequency switches provided in the embodiments of this application;

[0044] Figures 5A and 5B are schematic cross-sectional views of two radio frequency switches provided in the embodiments of this application;

[0045] Figure 6 is a top view of a radio frequency switch after the second conductive layer and the first conductive layer are stacked, according to an embodiment of this application.

[0046] Figures 7 and 11 are top view schematic diagrams of the first conductive layer in two radio frequency switches provided in the embodiments of this application;

[0047] Figures 8, 12 and 13 are top view schematic diagrams of three different stacked structures of the second conductive layer and the first conductive layer provided in the embodiments of this application;

[0048] Figure 9 is a schematic cross-sectional view of a radio frequency switch provided in another embodiment of this application;

[0049] Figures 10A, 10B, and 10C are schematic diagrams showing the distribution of connection vias between three types of first and second thermally conductive electrodes provided in the embodiments of this application.

[0050] Figures 14 to 17 are schematic cross-sectional views of four radio frequency switches provided in the embodiments of this application. Specific Implementation

[0051] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0052] A PIN diode is a variable impedance device controlled by bias current in the radio frequency (RF) and microwave bands. Referring to Figures 1A and 1B, its active semiconductor layer includes a P-junction, an N-junction, and an intrinsic I-layer located between the P-junction and N-junction. Figure 1A is a top view of a related RF switch structure; the area marked in the dashed box represents the interdigitated electrode pair 1 of the diode. Figure 1B is a cross-sectional view of a related RF switch structure; the diode, capacitor C, and inductor L are shown in Figure 1B. In practical applications, under forward current, holes and electrons are injected into the I-layer. These charges do not immediately cancel each other out but are retained for a certain period, thus generating and storing a certain amount of charge in the active semiconductor layer. This charge reduces the impedance of the I-layer, allowing RF signals to pass through. When the current input to the PIN diode is reverse biased, the I-layer does not store charge, and the PIN diode behaves as a parallel combination of a capacitor and a resistor, acting as a disconnector in the RF circuit.

[0053] In related technologies, PIN devices are prone to burnout at high power because their temperature increases significantly with the increase of radio frequency signal power, which limits the improvement of device power capacity.

[0054] Based on this, embodiments of this application provide a radio frequency (RF) switch and an RF chip. The RF switch includes a glass substrate, a semiconductor layer, a first conductive layer, and a second conductive layer. The semiconductor layer includes multiple semiconductor patterns, and the second conductive layer includes multiple first interdigital electrode groups and multiple first thermally conductive electrodes. The first thermally conductive electrodes are located in the region between two adjacent first interdigital electrode groups. The orthographic projection of the semiconductor patterns on the glass substrate overlaps with the orthographic projection of the first interdigital electrode groups on the glass substrate. In the RF switch of this application, by providing multiple first thermally conductive electrodes on the second conductive layer, with these first thermally conductive electrodes located between two adjacent first interdigital electrode groups, excess heat in the RF switch can be dissipated. This improves the heat dissipation effect of the RF switch while ensuring its performance, thereby increasing its lifespan and expanding its application scenarios.

[0055] The embodiments of this application provide the following technical solutions:

[0056] Embodiments of this application provide a radio frequency switch, wherein, as shown in FIG5A or FIG5B, the radio frequency switch includes:

[0057] Glass substrate Gls;

[0058] The semiconductor layer Sc, located on one side of the glass substrate Gls, includes multiple semiconductor patterns Active; the semiconductor patterns include a first region, a second region, and a third region (e.g., a region marked I) located between the first and second regions, wherein the first and second regions are regions that have undergone conductor treatment; one of the first and second regions is a P-type doped region (e.g., a region marked P), and the other is an N-type doped region (e.g., a region marked N);

[0059] The first conductive layer SD1 is located on the side of the semiconductor layer Sc away from the glass substrate Gls;

[0060] The second conductive layer SD2 is located on the side of the first conductive layer SD1 away from the glass substrate Gls. As shown in Figure 2 or Figure 6, the second conductive layer SD2 includes a plurality of first interdigital electrode groups 2 and a plurality of first thermally conductive electrodes 3. The first thermally conductive electrodes 3 are located in the region between two adjacent first interdigital electrode groups 2. The first thermally conductive electrodes 3 are used to transfer and dissipate heat to help dissipate heat from the RF switch. As shown in Figure 3 or Figure 4, the orthographic projection of the semiconductor pattern Active on the glass substrate Gls overlaps with the orthographic projection of the first interdigital electrode group 2 on the glass substrate Gls.

[0061] It should be noted that, in order to clearly illustrate the structure of the RF switch, Figure 2 provides a top view of the second conductive layer S2, and Figures 3 and 4 provide top view of the structure after the semiconductor pattern Active in the two semiconductor layers Sc is stacked with the second conductive layer S2.

[0062] Among them, glass substrates (Gls) have better resistivity than other plastic or resin insulating substrates. Therefore, when used in radio frequency switches, they can reduce radio frequency signal leakage and improve signal transmission stability.

[0063] It should be noted that, as shown in Figure 3 or Figure 4, the first interdigital electrode group 2 and the semiconductor pattern Active together form a diode. Of course, the diode may also include other structures besides the first interdigital electrode group 2 and the semiconductor pattern Active, which are not limited here.

[0064] The number of diodes disposed on the glass substrate Gls is not limited here.

[0065] In some examples, a diode can be placed on the glass substrate Gls.

[0066] In some examples, multiple diodes can be placed on the glass substrate Gls, where multiple means two or more.

[0067] For example, multiple diodes arranged in an array can be disposed on the glass substrate Gls.

[0068] For example, the material of the semiconductor layer Sc may include silicon, in which case the glass substrate Gls and the semiconductor layer Sc may be bonded together using a bonding process.

[0069] For example, silicon materials can include monocrystalline silicon (c-Si), polycrystalline silicon (P-Si), and low-temperature polycrystalline silicon (LTPS). Among them, LTPS can be crystallized by excimer laser annealing (ELA) or laser activation.

[0070] For example, the material of the semiconductor layer Sc may include oxide materials, such as IGZO (Indium Gallium Zinc Oxide) and ITZO (Indium Tin Zinc Oxide).

[0071] In Figure 3, multiple semiconductor patterns are connected together in a vertical direction; in Figure 4, multiple semiconductor patterns are set independently in a vertical direction.

[0072] In an exemplary embodiment, the material of the first conductive layer SD1 can be a metal, such as one or more combinations of copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo).

[0073] For example, the material of the first conductive layer SD1 may include aluminum (Al), for example, a Mo / Al / Mo stack structure can be formed by sputtering, wherein the material near the glass substrate Gls is Mo, and the thickness is approximately [missing information]. The film, approximately [thickness value missing], is primarily used to improve the adhesion between film layers. The middle layer of the stacked structure is made of Al, serving as the material for electrical signal transmission. The material on the side furthest from the glass substrate (Gls) is Mo, with a thickness of approximately [thickness value missing]. The left and right sides can be used to protect the intermediate layer and prevent oxidation of the low resistivity intermediate layer surface.

[0074] For example, the material of the first conductive layer SD1 may include copper (Cu), and for example, a stacked structure such as MoNb / Cu / MoNb can be formed by sputtering, wherein the material on the side closest to the glass substrate Gls is MoNb, and the thickness is approximately [missing information]. The film, approximately [thickness value missing], is primarily used to improve the adhesion between film layers. The middle layer of the stacked structure is made of Cu, serving as the material for electrical signal transmission. The material on the side furthest from the glass substrate (Gls) is MoNb, with a thickness of approximately [thickness value missing]. The layer around 1 μm can be used to protect the intermediate layer, preventing oxidation of the low-resistivity surface. Since the thickness of a single sputtering is generally no more than 1 μm, multiple sputtering processes are required to form a thickness exceeding 1 μm. Alternatively, a thicker copper metal layer can be formed through electroplating. Specifically, a seed layer can be formed using MoNiTi to increase the nucleation density of metal grains in subsequent electroplating processes. Then, low-resistivity copper is formed through electroplating, followed by an anti-oxidation layer, which can also be made of MoNiTi.

[0075] Of course, the first conductive layer SD1 can also be a single metal layer; or it can be a stacked metal layer such as Mo / AlNd / Mo, Ti / Al / Ti.

[0076] In an exemplary embodiment, the material of the second conductive layer SD2 may include (Cu) as described above, for example, a stacked structure such as MoNb / Cu / MoNb may be formed by sputtering.

[0077] For example, the material of the second conductive layer SD1 can be the same as the material of the first conductive layer SD1.

[0078] Among them, the first conductive layer SD1 and the second conductive layer SD2 can both be referred to as source and drain conductive layers.

[0079] In the embodiments of this application, when the source and drain conductive layer SD is made of aluminum (Al), its thickness can be set to be in the range of 800nm ​​to 1000nm; for example, 850nm, 880nm, 900nm, 950nm, 980nm.

[0080] When the source / drain conductive layer SD is processed with copper (Cu), its thickness ranges from 800nm ​​to 3μm; for example, 850nm, 880nm, 900nm, 950nm, 980nm, 1050nm, 1100nm, 1150nm, 1180nm, 1μm, 1.5μm, 1.8μm, 2.0μm or 2.5μm.

[0081] In addition, "overlap exists" in this specification means at least partial overlap, including partial overlap and complete overlap.

[0082] As shown in Figure 3 or Figure 4, the orthographic projection of the semiconductor pattern Active on the glass substrate Gls at least partially overlaps with the orthographic projection of the first interdigital electrode group 2 on the glass substrate Gls.

[0083] In the radio frequency switch of this application, by setting a plurality of first thermal conductive electrodes 3 on the second conductive layer SD2, the first thermal conductive electrodes 3 are located between two adjacent first interdigital electrode groups 2. In this way, the first thermal conductive electrodes 3 can dissipate excess heat in the radio frequency switch, thereby improving the heat dissipation effect of the radio frequency switch while ensuring the performance of the radio frequency switch, thus improving the service life of the radio frequency switch and expanding the application scenarios of the radio frequency switch.

[0084] In some embodiments of the radio frequency switch provided in this application, as shown in Figures 6 and 9, the first conductive layer SD1 further includes a plurality of second thermally conductive electrodes 4;

[0085] The orthographic projection of the second thermally conductive electrode 4 on the glass substrate Gls is located in the region between the orthographic projections of the two adjacent first interdigital electrode groups 2 on the glass substrate Gls. The orthographic projection of the second thermally conductive electrode 4 on the glass substrate Gls overlaps with the orthographic projection of the first thermally conductive electrode 3 on the glass substrate Gls and the two are electrically connected together.

[0086] To further improve the heat dissipation of the RF switch, multiple second thermal electrodes 4 can be disposed on the first conductive layer SD1. The orthographic projection of the second thermal electrodes 4 on the glass substrate Gls overlaps with the orthographic projection of the first thermal electrode 3 on the glass substrate Gls and the two are electrically connected together. In this way, the second thermal electrodes 4 can transfer the heat from the side of the RF switch near the glass substrate Gls to the first thermal electrodes 4. Since the first thermal electrodes 4 are disposed on the surface conductive layer of the RF switch, the heat generated inside the RF switch can be dissipated efficiently. While ensuring the performance of the RF switch, the heat dissipation effect of the RF switch is improved, thereby increasing the service life of the RF switch and expanding the application scenarios of the RF switch.

[0087] In Figure 9, a second via 2 is provided between the second thermally conductive electrode 4 and the first thermally conductive electrode 3 to connect the two electrodes and improve heat dissipation efficiency. Figures 10A, 10B, and 10C provide top views of three arrangements of the second via 2 between the second thermally conductive electrode 4 and the first thermally conductive electrode 3. To improve the heat transfer efficiency between the second thermally conductive electrode 4 and the first thermally conductive electrode 3, multiple arrays of second via 2 can be provided between them.

[0088] In some embodiments of the radio frequency switch provided in this application, as shown in Figures 2, 3, 4 and 6, the first interdigital electrode group 2 includes a first electrode e1 and a second electrode e2 that are not connected to each other. The first electrode e1, the second electrode e2 and the first thermally conductive electrode 3 extend in the same direction (e.g., along the OB direction). Each first electrode e1 is electrically connected to a first region of the semiconductor pattern Active, and each second electrode e2 is electrically connected to a second region of the semiconductor pattern Active.

[0089] Among them, one of the first electrode e1 and the second electrode e2 is electrically connected to the first region of the semiconductor pattern Active, and the other is electrically connected to the second region of the semiconductor pattern Active.

[0090] As shown in Figures 2, 3, 4 and 6, the second conductive layer SD2 includes a first connecting line L1 and a second connecting line L2 extending along a first direction (e.g., the OA direction). The first connecting line L1 is used to electrically connect a plurality of first electrodes e1 together, and the second connecting line L2 is used to connect a plurality of second electrodes e2 together.

[0091] On the plane parallel to the second conductive layer where SD2 is located, the first electrode e1, the second electrode e2 and the first thermally conductive electrode 3 are arranged sequentially along the first direction (e.g., the OA direction), and the first direction (e.g., the OA direction) intersects with the extension trend of the first electrode e1 (e.g., extending along the OB direction).

[0092] The aforementioned "consistent extension trend" does not limit the first electrode e1, the second electrode e2, and the first thermally conductive electrode 3 to be curves, broken lines, or straight lines; it only represents the wiring trend. For example, the first electrode e1, the second electrode e2, and the first thermally conductive electrode 3 can all be curves with a horizontal extension trend; or, for another example, the first electrode e1 and the second electrode e2 can both be curves with a horizontal extension trend, and the first thermally conductive electrode 3 can be a broken line with a horizontal extension trend. Of course, to improve space utilization in the RF switch, the first electrode e1, the second electrode e2, and the first thermally conductive electrode 3 can all be straight lines; or, all three can be broken lines; or, all three can be curves. The description of "extension trend" in the following text is the same as here and will not be repeated.

[0093] The aforementioned intersections may include perpendicularity or having a preset angle.

[0094] In some embodiments of the radio frequency switch provided in this application, as shown in Figures 7 and 8, the first conductive layer SD1 further includes a plurality of second interdigital electrode groups 5, the second interdigital electrode groups 5 including a third electrode e3 and a fourth electrode e4 that are not connected to each other; the third electrode e3, the fourth electrode e4 and the second thermally conductive electrode 4 extend in the same direction.

[0095] As shown in Figure 5B or Figure 9, the orthographic projection of the third electrode e3 on the glass substrate Gls overlaps with the orthographic projection of the first electrode e1 on the glass substrate Gls and the two are electrically connected together. The orthographic projection of the fourth electrode e4 on the glass substrate Gls overlaps with the orthographic projection of the second electrode e2 on the glass substrate Gls and the two are electrically connected together.

[0096] For the sake of clarity in the accompanying drawings, the connecting via between the third electrode e3 and the first electrode e1, as well as the connecting via between the fourth electrode e4 and the second electrode e2, are not shown in the relevant top views. The connection method can be referred to the cross-sectional structural diagram, such as shown in Figure 5B or Figure 9.

[0097] Among them, at least one connecting via can be provided between the third electrode e3 and the first electrode e1; at least one connecting via can be provided between the fourth electrode e4 and the second electrode e2. The specific number can be determined by comprehensively considering factors such as conductivity requirements and design space.

[0098] It should be noted that for the third electrode e3 and the first electrode e1 mentioned above, their projections are not required to completely overlap. In some examples, they can completely overlap, while in other examples, they can partially overlap. The overlapping of the projections of the fourth electrode e4 and the second electrode e2 is similar to that of the third electrode e3 and the first electrode e1. In the top view provided in the accompanying drawings of this application, in order to clearly show the two film layers, the projections of the third electrode e3 and the first electrode e1 partially overlap, and the projections of the fourth electrode e4 and the second electrode e2 partially overlap, as examples are drawn.

[0099] In some embodiments of the radio frequency switch provided in this application, as shown in Figures 7 and 11, the first conductive layer SD1 further includes a third connecting line L3 and a fourth connecting line L4 extending along a first direction (e.g., the OA direction).

[0100] As shown in Figures 8 and 12, the distance H2 between the axis of the third connecting line L3 and the axis of the fourth connecting line L4 is less than or equal to the distance H1 between the axis of the first connecting line L1 and the axis of the second connecting line L2.

[0101] For example, as shown in Figure 8, the distance H2 between the axis of the third connecting line L3 and the axis of the fourth connecting line L4 is equal to (equal to and approximately equal to, including possible dimensional fluctuations caused by process variations) the distance H1 between the axis of the first connecting line L1 and the axis of the second connecting line L2; at this time, the axis of the third connecting line L3 is approximately coincident with the axis of the first connecting line L1, and the axis of the fourth connecting line L4 is approximately coincident with the axis of the second connecting line L2.

[0102] For example, as shown in Figure 12, the distance H2 between the axis of the third connecting line L3 and the axis of the fourth connecting line L4 is less than the distance H1 between the axis of the first connecting line L1 and the axis of the second connecting line L2. In this case, the axis of the first connecting line L1 is located on the side of the axis of the third connecting line L3 that is away from the axis of the second connecting line L2, and the axis of the second connecting line L2 is located on the side of the axis of the fourth connecting line L4 that is away from the axis of the first connecting line L1.

[0103] When the distance H2 between the axis of the third connecting line L3 and the axis of the fourth connecting line L4 is less than the distance H1 between the axis of the first connecting line L1 and the axis of the second connecting line L2, as shown in Figure 12, the orthographic projections of the third connecting line L3 and the first connecting line L1 on the glass substrate Gls may not overlap; or, the orthographic projections of the third connecting line L3 and the first connecting line L1 on the glass substrate Gls may partially overlap, but there is a gap between the first connecting line L1 and the first thermally conductive electrode 3; the orthographic projections of the fourth connecting line L4 and the second connecting line L2 on the glass substrate Gls may not overlap; or, the orthographic projections of the fourth connecting line L4 and the second connecting line L2 on the glass substrate Gls may partially overlap, but there is a gap between the second connecting line L2 and the first thermally conductive electrode 3.

[0104] Since the first thermally conductive electrode 3, the first connecting line L1, and the second connecting line L2 are all disposed on the second conductive layer SD2, and there is a gap between the second connecting line L2 and the first thermally conductive electrode 3, and a gap between the first connecting line L1 and the first thermally conductive electrode 3, it can prevent the first thermally conductive electrode 3 from being connected to the first connecting line L1 or the second connecting line L2 respectively.

[0105] In some embodiments of the radio frequency switch provided in this application, as shown in Figures 7 and 8, when the distance H2 between the axis of the third connecting line L3 and the axis of the fourth connecting line L4 is equal to the distance H1 between the axis of the first connecting line L1 and the axis of the second connecting line L2, the third connecting line L3 is used to connect each third electrode e3, and the fourth connecting line L4 is used to connect each fourth electrode e4; the orthographic projection of the third connecting line L3 on the glass substrate Gls overlaps with the orthographic projection of the first connecting line L1 on the glass substrate Gls, and the orthographic projection of the fourth connecting line L4 on the glass substrate Gls overlaps with the orthographic projection of the second connecting line L2 on the glass substrate Gls.

[0106] For example, as shown in Figure 8, the orthographic projection of the third connecting line L3 on the glass substrate Gls overlaps with the orthographic projection of the first connecting line L1 on the glass substrate Gls and their axes are approximately coincident. The orthographic projection of the fourth connecting line L4 on the glass substrate Gls overlaps with the orthographic projection of the second connecting line L2 on the glass substrate Gls and their axes are approximately coincident.

[0107] Furthermore, as shown in Figures 7, 8, and 9, each third electrode e3 is connected together via a third connecting line L3, and at least one third electrode e3 is connected together with its corresponding first electrode e1 via a connecting hole; each fourth electrode e4 is connected together via a first connecting line L1, and at least one fourth electrode e4 is connected together with its corresponding second electrode e2 via a connecting hole. In this way, by connecting multiple electrodes in parallel, the signal transmission capability of the electrodes can be significantly improved, thereby enhancing the performance of the RF switch.

[0108] In some embodiments of the radio frequency switch provided in this application, as shown in Figures 11 and 12, when the distance H2 between the axis of the third connecting line L3 and the axis of the fourth connecting line L4 is less than the distance H1 between the axis of the first connecting line L1 and the axis of the second connecting line L2, the third connecting line L3 is used to connect the first end of each of the second thermally conductive electrodes 4, and the fourth connecting line L4 is used to connect the second end of each of the second thermally conductive electrodes 4.

[0109] In the embodiments of this application, the first ends of each of the second thermally conductive electrodes 4 are connected together by setting a third connecting line L3, and the second ends of each of the second thermally conductive electrodes 4 are connected together by setting a fourth connecting line L4. This greatly increases the effective area of ​​the thermally conductive electrodes that can transfer heat in the first conductive layer SD1, further improving the heat transfer efficiency in the RF switch. Then, the heat is transferred to the first thermally conductive electrode 3 located in the surface conductive layer (e.g., the second conductive layer SD2) through the second via Via2 between the first thermally conductive electrode 3 and the second thermally conductive electrode 4. While ensuring the performance of the RF switch, the heat dissipation effect of the RF switch is significantly improved, thereby increasing the service life of the RF switch and expanding the application scenarios of the RF switch.

[0110] In some embodiments of the radio frequency switch provided in this application, as shown in FIG12, since the first thermally conductive electrode 3, the first connecting line L1 and the second connecting line L2 are all disposed on the second conductive layer SD2, in order to prevent the first thermally conductive electrode 3 from being connected to the first connecting line L1 or the second connecting line L2, the orthogonal projection of the third connecting line L3 on the glass substrate Gls can be configured not to overlap with the orthogonal projection of the first connecting line L1 on the glass substrate Gls, and the orthogonal projection of the fourth connecting line L4 on the glass substrate Gls can be configured not to overlap with the orthogonal projection of the second connecting line L2 on the glass substrate Gls.

[0111] In some embodiments of the radio frequency switch provided in this application, as shown in FIG12, the orthographic projection of the first thermally conductive electrode 3 on the glass substrate Gls does not overlap with the orthographic projections of the third connecting line L3 and the fourth connecting line L4 on the glass substrate Gls.

[0112] In some embodiments of the radio frequency switch provided in this application, as shown in FIG13, the orthogonal projection of the first thermally conductive electrode 3 on the glass substrate Gls partially overlaps with the orthogonal projections of the third connecting line L3 and the fourth connecting line L4 on the glass substrate Gls.

[0113] In the embodiments of this application, as shown in FIG13, by extending the first thermally conductive electrode 3 along the second direction (e.g., the OB direction), the area of ​​the first thermally conductive electrode 3 is increased and the orthographic projection of the first thermally conductive electrode 3 on the glass substrate Gls partially overlaps with the orthographic projections of the third connecting line L3 and the fourth connecting line L4 on the glass substrate Gls, thereby further increasing the area of ​​the thermally conductive electrode and improving the heat dissipation effect of the RF switch.

[0114] In an exemplary embodiment, when the orthographic projection of the first thermally conductive electrode 3 on the glass substrate Gls partially overlaps with the orthographic projections of the third connecting line L3 and the fourth connecting line L4 on the glass substrate Gls, the two sides of the first thermally conductive electrode 3 along the first direction (e.g., the OA direction) can be aligned with the sides of the third connecting line L3 and the fourth connecting line L4 along the first direction (e.g., the OA direction) to further increase the area of ​​the thermally conductive electrode and improve the heat dissipation effect of the RF switch.

[0115] In some embodiments of the radio frequency switch provided in this application, as shown in FIG14, at least one first groove C1 is provided on the glass substrate Gls. The region enclosed by the outer contour of the first groove C1 is projected onto the second conductive layer SD2 and covers the first interdigital electrode group 2 (including the first electrode e1 and the second electrode e2 that are not connected to each other). The region enclosed by the outer contour of the first groove C1 is projected onto the semiconductor layer Sc and covers the semiconductor pattern Active. The first groove C1 is filled with a thermally conductive layer DR.

[0116] In an exemplary embodiment, the merchant's first groove C1 can be formed by the TGV (Through Glass Via) process, and the first groove C1 can be filled with a conductive layer DR.

[0117] For example, the material of the conductive layer DR may include thermally conductive silicone grease, graphene, carbon nanotubes, metals, and other materials with high thermal conductivity.

[0118] In some embodiments of the radio frequency switch provided in this application, as shown in FIG14, at least one second groove C2 is provided on the glass substrate Gls, and the area enclosed by the outer contour of the second groove C2 covers the first thermally conductive electrode 3 on the orthogonal projection of the second conductive layer SD2; the second groove C2 is filled with a thermally conductive layer DR.

[0119] For example, the material of the conductive layer DR filled in the first groove C1 can be the same as the material of the conductive layer DR filled in the second groove C2.

[0120] In some embodiments of the radio frequency switch provided in this application, as shown in FIG15, the first groove C1 and the second groove C2 are connected.

[0121] In some examples, thermally conductive materials can be filled using processes such as bonding, nanoimprinting, and electroplating.

[0122] In the embodiments of this application, by providing at least one first groove C1 and / or at least one second groove C2 on the glass substrate Gls, and by filling the first groove C1 and / or the second groove C2 with a thermally conductive layer DR, heat can be further dissipated from the back side of the RF switch (the side where the glass substrate is located). In this way, the front side (the side where the device is located) and the back side of the RF switch dissipate heat simultaneously, which greatly improves the heat dissipation efficiency.

[0123] In some embodiments of the radio frequency switch provided in this application, as shown in Figures 16 and 17, the radio frequency switch further includes at least one thermally conductive pattern DT. The thermally conductive pattern DT is located on the side of the first conductive layer SD1 away from the glass substrate Gls. The orthographic projection of the thermally conductive pattern DT on the glass substrate Gls does not overlap with the orthographic projection of the first interdigitated electrode group 2 (including the first electrode e1 and the second electrode e2 that are not connected to each other) and the first thermally conductive electrode 3 on the glass substrate Gls.

[0124] The radio frequency switch also includes at least one first through hole Via1. The orthographic projection of the area enclosed by the outer contour of at least one of the first groove C1 and the second groove C2 on the first conductive layer SD1 overlaps with the orthographic projection of the first through hole Via1 on the first conductive layer SD1, and at least one of the first groove C1 and the second groove C2 is connected to the first through hole Via1; the thermally conductive pattern DT is connected to the thermally conductive layer DR through the first through hole Via1.

[0125] In the embodiments of this application, by setting a thermally conductive pattern DT on the side of the first conductive layer SD1 away from the glass substrate Gls, the heat dissipation efficiency of the front side (the side where the device is located) of the RF switch is further increased. In addition, by setting a first through hole Via1 to connect the thermally conductive pattern DT with the thermally conductive layer DR, the heat generated inside the RF switch can be dissipated more efficiently. While ensuring the performance of the RF switch, the heat dissipation effect of the RF switch is maximized, thereby improving the service life of the RF switch and expanding the application scenarios of the RF switch.

[0126] In some embodiments of the radio frequency switch provided in this application, the material of the thermally conductive pattern DT is a conductive material, and the thermally conductive pattern DT is disposed in the same layer as the second conductive layer SD2.

[0127] For example, the co-layer arrangement of the thermally conductive pattern DT and the second conductive layer SD2 refers to a structure formed by patterning the thermally conductive pattern DT and the second conductive layer SD2 through the same patterning process, and their materials may be the same or different. For instance, the precursor materials for forming various co-layered structures may be the same, while the final materials may be the same or different.

[0128] For example, the thermally conductive pattern DT and the second conductive layer SD2 are patterned in the same patterning process, and both are made of the same material. For instance, both the thermally conductive pattern DT and the second conductive layer SD2 are made of metal.

[0129] When both the thermally conductive pattern DT and the thermally conductive layer DR are made of metal and are electrically conductive, the thermally conductive layer DR can serve as the ground wire for a CPW (Coplanar Waveguide) transmission line. For a more detailed explanation of coplanar waveguides, please refer to relevant technical documentation; further details will not be provided here.

[0130] In some embodiments of the radio frequency switch provided in this application, the material of the thermally conductive pattern DT is the same as the material of the thermally conductive layer DR.

[0131] For example, the materials of the thermally conductive pattern DT and the thermally conductive layer DR are both thermally conductive materials.

[0132] In some embodiments of the radio frequency switch provided in this application, as shown in FIG5A, FIG5B, FIG9 and FIG14-FIG17, the radio frequency switch further includes a buffer layer Bf, a gate insulating layer GI and a passivation layer Pvx;

[0133] The buffer layer Bf is located between the glass substrate Gls and the semiconductor layer Sc, the gate insulating layer GI is located on the side of the semiconductor layer Sc away from the glass substrate Gls, and the passivation layer Pvx is located between the first conductive layer SD1 and the second conductive layer SD2.

[0134] For example, the material of the buffer layer Bf can be an inorganic material.

[0135] Alternatively, a gate insulating layer (GI) can be deposited using PECVD (Plasma Enhanced Chemical Vapor Deposition) technology. The material of the gate insulating layer GI can be silicon nitride, silicon oxynitride, or other dielectric materials.

[0136] For example, the material of the passivation layer Pvx can be silicon nitrogen (SiN), silicon oxygen (SiO), or hydrogen-free SiNx:F.

[0137] In some embodiments of the radio frequency switch provided in this application, as shown in Figures 5A, 5B, 9 and 14 to 17, the radio frequency switch includes a diode PIN, with one of the first electrode e1 and the second electrode e2 serving as the positive terminal of the diode PIN and the other serving as the negative terminal of the diode PIN.

[0138] In practical applications, when the RF switch is equipped with a third electrode e3 and a fourth electrode e4, the third electrode e3 and the fourth electrode e4 can be used as the positive and negative terminals of the diode PIN, respectively, while the first electrode e1 and the second electrode e2 can be used as lead wires electrically connected to the positive and negative terminals, respectively.

[0139] In some embodiments of the radio frequency switch provided in this application, as shown in Figures 5A, 5B, 9 and 14-17, the radio frequency switch further includes at least one capacitor C and at least one inductor L; the first conductive layer SD1 further includes a first plate of the capacitor C and a first conductive structure of the inductor L, and the second conductive layer SD2 further includes a second plate of the capacitor C and a second conductive structure of the inductor L; the first plate and the second plate of the capacitor C overlap; the first conductive structure and the second conductive structure of the inductor L are electrically connected to form the coil of the inductor L.

[0140] Embodiments of this application provide a radio frequency chip, which includes a radio frequency switch as described in any of the preceding descriptions.

[0141] For example, the radio frequency chip may also include a transceiver, a filter, a power amplifier, and an antenna tuning switch.

[0142] In the RF chip of this application, by setting multiple first thermal electrodes 3 on the second conductive layer SD2 of the RF switch, the first thermal electrodes 3 are located between two adjacent first interdigital electrode groups 2. In this way, the first thermal electrodes 3 can dissipate excess heat in the RF switch, improve the heat dissipation effect of the RF switch while ensuring the performance of the RF switch, thereby improving the service life of the RF switch and expanding the application scenarios of the RF switch.

[0143] The embodiments of this application also provide a method for fabricating a radio frequency switch. The fabrication method is briefly described below using the structural diagram shown in Figure 9 as an example.

[0144] 1. Provide glass substrate Gls;

[0145] 2. A buffer layer Bf is formed on the glass substrate Gls;

[0146] 3. A semiconductor thin film is formed on the buffer layer Bf, and the semiconductor thin film is patterned to obtain multiple semiconductor patterns Active;

[0147] 4. Form a first mask pattern on multiple semiconductor active patterns, for example, using a first photoresist pattern or a first metal pattern as a mask, and perform a first ion implantation on the first region (e.g., the P region) of the semiconductor active pattern; then remove the first mask pattern.

[0148] 5. Form a second mask pattern on multiple semiconductor active patterns, for example, using a second photoresist pattern as a mask or a second metal pattern as a mask, and perform a second ion implantation on the second region (e.g., the N region) of the semiconductor active pattern; then remove the second mask pattern;

[0149] 6. Ion activation is performed using RTA or laser processing techniques;

[0150] 7. Among them, rapid thermal annealing (RTA) technology refers to rapidly heating the experimental sample (e.g., a semiconductor pattern that has undergone ion implantation) to about 1000-1500K, holding it at that temperature for a few seconds, and then completing the quenching.

[0151] 8. Form the gate insulating layer GI;

[0152] 9. Form the first conductive layer SD1;

[0153] The first conductive layer SD1 includes a third electrode e3, a fourth electrode e4, a third connecting line L3, a fourth connecting line L4, a second thermally conductive electrode 4, the first plate of the capacitor C, and the first conductive structure of the inductor L.

[0154] 10. Formation of passivation layer Pvx;

[0155] 11. Form the second conductive layer SD2.

[0156] The second conductive layer SD2 includes a first electrode e1, a second electrode e2, a first connecting line L1, a second connecting line L2, a first thermally conductive electrode 3, the second plate of the capacitor C, and the second conductive structure of the inductor L.

[0157] Of course, the radio frequency switch may also include other structures and components, and the method of fabricating the radio frequency switch may also include other steps and processes. Here, only the steps and processes related to the inventive point are introduced. Other fabrication steps and processes can be referred to the descriptions in related technologies, and will not be repeated here.

[0158] In the embodiments of this application, the terms "first", "second", "third", "fourth" are used to distinguish the same or similar items with essentially the same function and effect, only for the purpose of clearly describing the technical solution of the embodiments of this application, and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated.

[0159] In the embodiments of this application, the terms "upper" and "lower" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0160] In the description of this specification, the terms "one embodiment," "some embodiments," "exemplary embodiment," "example," "specific example," or "some examples," etc., are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this application. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics mentioned may be included in any suitable manner in any one or more embodiments or examples.

[0161] In the embodiments of this application, "multiple" means two or more, and "at least one" means one or more, unless otherwise explicitly defined.

[0162] As used in this application, "parallel," "perpendicular," "equal," and "flush" encompass the described situation and situations that are similar to the described situation, within an acceptable deviation range, which is determined by those skilled in the art taking into account the measurement under discussion and the error associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, where the acceptable deviation range for approximate parallelism can be, for example, within 10° or 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, where the acceptable deviation range for approximate perpendicularity can also be, for example, within 10° or 5°. "Equal" includes absolute equality and approximate equality, where the acceptable deviation range for approximate equality can be, for example, the difference between the two equals being less than or equal to 5% of either one. "Flush" includes absolute flush and approximate flush, where the acceptable deviation range for approximate flush can be, for example, the distance between the flushes being less than or equal to 5% of either one's dimension.

[0163] Unless the context otherwise requires, throughout the specification and claims, the term "comprising" is interpreted as open and encompassing, that is, "including, but not limited to".

[0164] The polygons used in this specification are not strictly defined; they can be approximate triangles, parallelograms, trapezoids, pentagons, or hexagons, and may have minor deformations due to tolerances.

[0165] In this specification, "electrical connection" and "coupling" include situations where components are connected together by elements that have some electrical function. There are no particular limitations on what constitutes an "electrical function," as long as it allows for the transmission and reception of electrical signals between the connected components. Examples of "electrical functions" include not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other components with various functions.

[0166] In this specification, the term "same-layer arrangement" refers to a structure formed by patterning two (or more) structures through the same patterning process, and their materials may be the same or different. For example, the precursors forming multiple structures in a same-layer arrangement may be made of the same material, while the final materials may be the same or different.

[0167] It should be understood that when a layer or element is referred to as being on another layer or substrate, it can mean that the layer or element is directly on the other layer or substrate, or that there is an intermediate layer between the layer or element and the other layer or substrate.

[0168] "At least one of A, B and C" has the same meaning as "at least one of A, B or C", both including the following combinations of A, B and C: only A, only B, only C, combinations of A and B, combinations of A and C, combinations of B and C, and combinations of A, B and C.

[0169] "A and / or B" includes the following three combinations: A only, B only, and a combination of A and B.

[0170] Finally, it should be noted that the above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A radio frequency switch, wherein, include: Glass substrate; A semiconductor layer, located on one side of the glass substrate, includes multiple semiconductor patterns; The first conductive layer is located on the side of the semiconductor layer away from the glass substrate; The second conductive layer is located on the side of the first conductive layer away from the glass substrate. The second conductive layer includes a plurality of first interdigital electrode groups and a plurality of first thermally conductive electrodes. The first thermally conductive electrodes are located in the region between two adjacent first interdigital electrode groups. The orthographic projection of the semiconductor pattern on the glass substrate overlaps with the orthographic projection of the first interdigitated electrode group on the glass substrate.

2. The radio frequency switch according to claim 1, wherein, The first conductive layer also includes a plurality of second thermally conductive electrodes; The orthographic projection of the second thermally conductive electrode on the glass substrate is located in the region between the orthographic projections of two adjacent first interdigital electrode groups on the glass substrate. The orthographic projection of the second thermally conductive electrode on the glass substrate overlaps with the orthographic projection of the first thermally conductive electrode on the glass substrate and the two are electrically connected together.

3. The radio frequency switch according to claim 2, wherein, The first interdigitated electrode group includes a first electrode and a second electrode that are not connected to each other, and the first electrode, the second electrode and the first thermally conductive electrode have the same extension trend; The second conductive layer includes a first connecting line and a second connecting line extending along a first direction. The first connecting line is used to electrically connect a plurality of first electrodes together, and the second connecting line is used to connect a plurality of second electrodes together. On a plane parallel to the second conductive layer, the first electrode, the second electrode, and the first thermally conductive electrode are arranged sequentially along the first direction, which intersects with the extension trend of the first electrode.

4. The radio frequency switch according to claim 3, wherein, The first conductive layer further includes a plurality of second interdigitated electrode groups, each of which includes a third electrode and a fourth electrode that are not connected to each other; the third electrode, the fourth electrode, and the second thermally conductive electrode have the same extension trend; Wherein, the orthographic projection of the third electrode on the glass substrate overlaps with the orthographic projection of the first electrode on the glass substrate and the two are electrically connected together; the orthographic projection of the fourth electrode on the glass substrate overlaps with the orthographic projection of the second electrode on the glass substrate and the two are electrically connected together.

5. The radio frequency switch according to claim 4, wherein, The first conductive layer further includes a third connecting line and a fourth connecting line extending along the first direction. The distance between the axis of the third connecting line and the axis of the fourth connecting line is less than or equal to the distance between the axis of the first connecting line and the axis of the second connecting line.

6. The radio frequency switch according to claim 5, wherein, The third connecting line is used to connect each of the third electrodes, and the fourth connecting line is used to connect each of the fourth electrodes; The orthographic projection of the third connecting line on the glass substrate overlaps with the orthographic projection of the first connecting line on the glass substrate, and the orthographic projection of the fourth connecting line on the glass substrate overlaps with the orthographic projection of the second connecting line on the glass substrate.

7. The radio frequency switch according to claim 5, wherein, The third connecting line is used to connect the first end of each of the second thermally conductive electrodes, and the fourth connecting line is used to connect the second end of each of the second thermally conductive electrodes. The orthographic projection of the third connecting line on the glass substrate does not overlap with the orthographic projection of the first connecting line on the glass substrate, and the orthographic projection of the fourth connecting line on the glass substrate does not overlap with the orthographic projection of the second connecting line on the glass substrate.

8. The radio frequency switch according to claim 7, wherein, The orthographic projection of the first thermally conductive electrode on the glass substrate partially overlaps with the orthographic projections of the third and fourth connecting lines on the glass substrate.

9. The radio frequency switch according to any one of claims 1 to 8, wherein, At least one first groove is provided on the glass substrate, and the orthographic projection of the area enclosed by the outer contour of the first groove on the second conductive layer covers the first interdigitated electrode group, and the orthographic projection of the area enclosed by the outer contour of the first groove on the semiconductor layer covers the semiconductor pattern. The first groove is filled with a thermally conductive layer.

10. The radio frequency switch according to claim 9, wherein, At least one second groove is provided on the glass substrate, and the orthogonal projection of the area enclosed by the outer contour of the second groove onto the second conductive layer covers the first thermally conductive electrode. The second groove is filled with the thermally conductive layer.

11. The radio frequency switch according to claim 10, wherein, The first groove and the second groove are connected.

12. The radio frequency switch according to claim 10, wherein, The radio frequency switch further includes at least one thermally conductive pattern, which is located on the side of the first conductive layer away from the glass substrate. The orthographic projection of the thermally conductive pattern on the glass substrate does not overlap with the orthographic projections of the first interdigital electrode group and the first thermally conductive electrode on the glass substrate. The radio frequency switch further includes at least one first through hole, the orthographic projection of the area enclosed by the outer contour of at least one of the first groove and the second groove on the first conductive layer overlaps with the orthographic projection of the first through hole on the first conductive layer, and at least one of the first groove and the second groove communicates with the first through hole; the thermally conductive pattern communicates with the thermally conductive layer through the first through hole.

13. The radio frequency switch according to claim 12, wherein, The thermally conductive pattern is made of a conductive material, and the thermally conductive pattern is disposed in the same layer as the second conductive layer.

14. The radio frequency switch according to claim 12, wherein, The material of the thermally conductive pattern is the same as the material of the thermally conductive layer.

15. The radio frequency switch according to any one of claims 10 to 14, wherein, The radio frequency switch also includes a buffer layer, a gate insulating layer, and a passivation layer; The buffer layer is located between the glass substrate and the semiconductor layer, the gate insulating layer is located on the side of the semiconductor layer away from the glass substrate, and the passivation layer is located between the first conductive layer and the second conductive layer.

16. The radio frequency switch according to any one of claims 3 to 8, wherein, The radio frequency switch includes a diode, with one of the first electrode and the second electrode serving as the positive terminal of the diode and the other serving as the negative terminal of the diode.

17. The radio frequency switch according to claim 16, wherein, The radio frequency switch further includes at least one capacitor and at least one inductor; The first conductive layer further includes the first electrode plate of the capacitor and the first conductive structure of the inductor; the second conductive layer further includes the second electrode plate of the capacitor and the second conductive structure of the inductor. The first electrode plate and the second electrode plate overlap; the first conductive structure and the second conductive structure are electrically connected to form the coil of the inductor.

18. A radio frequency chip, wherein, Includes the radio frequency switch as described in any one of claims 1 to 17.

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