Semiconductor device

Abstract

Provided is a semiconductor device, comprising a substrate and an epitaxial layer, wherein the epitaxial layer is arranged on one side of the substrate, the epitaxial layer is provided with a trench, the trench extends in a first direction along a first surface of the epitaxial layer away from the substrate, the first direction is the direction from the first surface of the epitaxial layer towards the substrate, trench walls of the trench may be oxidized to form a gate dielectric layer, the trench comprises a bottom close to one side of the substrate and side walls surrounding the bottom, and the oxidation rate of a material at the bottom of the trench is greater than the oxidation rate of a material at the side walls of the trench. Specifically, since the oxidation rate of the material at the bottom of the trench is greater than the oxidation rate of the material at the side walls of the trench, a thicker gate dielectric layer can be formed after the oxidation of the material at the bottom of the trench, so that in a device reverse bias state, the electric field breakdown resistance at the corners of the bottom of the trench is improved, thereby improving the voltage resistance in the device reverse bias state.

Images