Solar-blind ultraviolet detector and preparation method therefor

Abstract

A solar-blind ultraviolet detector and a preparation method therefor. The solar-blind ultraviolet detector comprises: a SiO2 / Si substrate; an electrode layer, which is disposed on the SiO2 / Si substrate; an absorption layer, which is disposed on the electrode layer, wherein the material of the absorption layer is lithium niobate; and a transparent conductive layer, which is disposed on the absorption layer, wherein a voltage bias is applied between the transparent conductive layer and the electrode layer. The solar-blind ultraviolet detector has the advantages of low dark current, ease of large-scale manufacturing, etc.

Description

Solar-blind ultraviolet detector and its preparation method

[0001] This application claims priority to Chinese Patent Application No. 202411704497.5, filed on November 26, 2024, entitled “Solar-blind Ultraviolet Detector and Preparation Method Thereof”, the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of photoelectric detection technology, and in particular to a solar-blind ultraviolet detector and its preparation method. Background Technology

[0003] Solar-blind ultraviolet light, also known as UV-C ultraviolet light, refers to light with wavelengths in the range of 200-280 nm. This type of ultraviolet light is needed for detection in various scenarios, including environmental monitoring and pollution control, medical and disinfection equipment, high-speed optical communication, security and monitoring systems, consumer electronics, and wearable devices. Traditional solar-blind ultraviolet detectors suffer from problems such as high dark current and difficulty in industrial manufacturing. Summary of the Invention

[0004] The purpose of this application is to at least address one of the aforementioned technical deficiencies, and in particular to provide a solar-blind ultraviolet detector with low dark current and suitable for large-scale industrial manufacturing.

[0005] In a first aspect, this application provides a solar-blind ultraviolet detector, comprising:

[0006] SiO2 / Si substrate;

[0007] The electrode layer is disposed on a SiO2 / Si substrate;

[0008] An absorption layer is disposed on top of the electrode layer, and the material of the absorption layer is lithium niobate.

[0009] A transparent conductive layer is disposed on top of the absorption layer, and a voltage bias is applied between the transparent conductive layer and the electrode layer.

[0010] In one embodiment, the thickness of SiO2 in the SiO2 / Si substrate is 10nm-500nm and the thickness of Si is 100μm-800μm.

[0011] In one embodiment, the solar-blind ultraviolet detector further includes an adhesion layer disposed between the electrode layer and the SiO2 / Si substrate.

[0012] In one embodiment, the adhesive layer is made of chromium or titanium and has a thickness of 5 nm to 10 nm.

[0013] In one embodiment, the thickness of the electrode layer is 50 nm to 100 nm.

[0014] In one embodiment, the thickness of the absorption layer is 2nm-1000nm.

[0015] In one embodiment, the material of the transparent conductive layer includes indium tin oxide, fluorine-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium zinc oxide, cadmium oxide, or graphene.

[0016] In one embodiment, the thickness of the transparent conductive layer is 10nm-200nm.

[0017] Secondly, this application provides a method for preparing a solar-blind ultraviolet detector, used in any of the above embodiments of the solar-blind ultraviolet detector, the preparation method comprising:

[0018] Deposit an electrode layer on a SiO2 / Si substrate;

[0019] An absorption layer is deposited on the electrode layer, and the material of the absorption layer is lithium niobate;

[0020] A transparent conductive layer is deposited on the absorption layer.

[0021] In one embodiment, an electrode layer is deposited on a SiO2 / Si substrate, including:

[0022] Deposit an adhesion layer on a SiO2 / Si substrate;

[0023] An electrode layer is deposited on the adhesion layer.

[0024] As can be seen from the above technical solutions, the embodiments of this application have the following advantages:

[0025] In this application, lithium niobate was selected as the absorber material to fabricate the device, exhibiting excellent characteristics such as low dark current and good responsivity, and possessing the advantage of being suitable for industrial-scale production. Furthermore, by optimizing certain conditions, such as using superior methods to improve crystal quality or employing transparent conductive oxide (TCO) layers with calculable performance parameters, the device performance can be further enhanced. Previously, due to the extremely low carrier mobility of lithium niobate, it was theoretically excluded from use as an absorber. However, this application, through a unique structural design and corresponding experimental verification, successfully overcame this technological prejudice. Although the bandgap of lithium niobate is not as wide as that of gallium oxide (4.78 eV), it is perfectly capable of effective detection in the corresponding wavelength band in practical applications. More importantly, using lithium niobate to fabricate devices does not require advanced and costly processes to achieve the desired effect. This means that it exhibits significant advantages over other materials in terms of flexibility, production efficiency, and cost control. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 is a schematic diagram of the structure of a solar-blind ultraviolet detector provided in an embodiment of this application;

[0028] Figure 2 is a spectrum obtained by photoluminescence detection using a solar-blind ultraviolet detector according to a specific embodiment of this application;

[0029] Figure 3 shows the current-voltage characteristics of a solar-blind ultraviolet detector provided in a specific embodiment of this application under solar-blind ultraviolet light irradiation of different powers;

[0030] Figure 4(a) is a power-responsivity curve of a solar-blind ultraviolet detector provided in a specific embodiment of this application;

[0031] Figure 4(b) is a power-external quantum efficiency curve of a solar-blind ultraviolet detector provided in a specific embodiment of this application;

[0032] Figure 4(c) is a power-detectivity curve of a solar-blind ultraviolet detector provided in a specific embodiment of this application;

[0033] Figure 4(d) is a power-noise equivalent power curve of a solar-blind ultraviolet detector provided in a specific embodiment of this application;

[0034] Figure 5 is a flowchart illustrating a method for preparing a solar-blind ultraviolet detector according to another embodiment of this application. Detailed Implementation

[0035] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0036] This application provides a solar-blind ultraviolet detector, as shown in Figure 1, comprising a SiO2 / Si substrate 10, an electrode layer 20, an absorption layer 30, and a transparent conductive layer 40. The electrode layer 20 is disposed on the SiO2 / Si substrate 10. The absorption layer 30 is disposed on the electrode layer 20. The material of the absorption layer 30 is lithium niobate. The transparent conductive layer 40 is disposed on the absorption layer 30, and a voltage bias is applied between the transparent conductive layer 40 and the electrode layer 20.

[0037] In this device, the SiO2 / Si substrate 10 is the fundamental supporting structure of the entire solar-blind ultraviolet detector, composed of a silicon dioxide (SiO2) layer 11 and a silicon (Si) layer 12. The Si layer 12, acting as the carrier, provides a smooth and stable surface for the deposition and fabrication of the electrode layer 20. Its excellent mechanical properties ensure the integrity of the entire device structure during subsequent processing, assembly, and use, preventing structural deformation or separation between functional layers due to minor external forces. The SiO2 layer 11 acts as an isolation and protection layer. In practical applications, various impurities, dust, and moisture may exist. If these substances come into contact with the silicon layer or other functional layers, they may cause short circuits, leakage, or alterations to the electrical and optical properties of the materials. The silicon dioxide layer acts as a barrier, effectively blocking these adverse factors and ensuring the stability and reliability of the entire device. The SiO2 layer 11 is generally much thinner than the Si layer. When selecting wafers, wafers with SiO2 thicknesses of 10nm-500nm and Si thicknesses of 100μm-800μm can be chosen.

[0038] As shown in Figure 1, the detection principle of this device is as follows: When solar-blind ultraviolet light is incident on the absorption layer 30, if the energy of the solar-blind ultraviolet light is higher than the bandgap of lithium niobate (LiNbO3), electron-hole pairs will be generated in the lithium niobate material. These electron-hole pairs can be collected by applying an external electric field. Specifically, in this device, solar-blind ultraviolet light can pass through the transparent conductive layer 40 and irradiate the absorption layer 30, causing the absorption layer 30 to generate electron-hole pairs, i.e., photogenerated carriers. These photogenerated carriers are subjected to an electric field generated by the voltage bias applied between the electrode layer 20 and the transparent conductive layer 40 within the absorption layer 30. Driven by the electric field, electrons move to one side and holes move to the other side, thus forming a current. The detection of solar-blind ultraviolet light is achieved based on the detection of this current.

[0039] In one embodiment, the solar-blind ultraviolet detector further includes an adhesion layer (not shown) disposed between the electrode layer 20 and the SiO2 / Si substrate 10. When one or more of the materials selected from gold, silver, platinum, palladium, copper, zinc, aluminum, and graphene are used as electrode materials to form the electrode layer 20, the bonding force between the SiO2 layer and the electrode material is often not strong enough. The adhesion layer mainly serves to enhance the bonding force between the electrode layer 20 and the SiO2 / Si substrate 10, ensuring that the electrode layer 20 can be firmly attached to the SiO2 / Si substrate 10. This prevents problems such as electrode layer detachment, peeling, or poor contact caused by external factors such as temperature changes and mechanical vibrations during subsequent use. It is a key intermediate layer that ensures the structural stability and electrical performance reliability of the entire device. In one specific embodiment, the adhesion layer is made of chromium or titanium and has a thickness of 5 nm to 10 nm. Chromium and titanium are two materials that can better bond the SiO2 / Si substrate 10 and the electrode layer 20 together. The thickness of the adhesion layer is selected as 5nm to 10nm mainly because they can also fill the small pores and defects that may exist on the surface of the SiO2 / Si substrate 10, so that the electrode layer 20 has a more uniform and stable adhesion foundation during deposition or subsequent use.

[0040] In one embodiment, the electrode layer 20 is made of one or more of the following materials: gold, silver, platinum, palladium, copper, zinc, aluminum, and graphene. These materials all possess excellent electrical conductivity, and their physicochemical properties make them highly suitable as building materials for the electrode layer 20. The thickness of the electrode layer 20, from 50 nm to 100 nm, ensures low loss and high efficiency during current conduction, avoiding energy waste and signal attenuation caused by excessive electrode resistance.

[0041] In one embodiment, the thickness of the absorption layer 30 is 2nm-1000nm. Regarding light absorption and photoelectric conversion, this specific thickness allows the absorption layer 30 to absorb incident solar-blind ultraviolet light precisely, fully utilizing the energy of the ultraviolet light to generate a considerable number of photogenerated carriers. If the absorption layer 30 is too thin, much ultraviolet light may pass through directly without being utilized, resulting in too few photogenerated carriers and affecting the intensity of the subsequent detection signal. Conversely, if the absorption layer 30 is too thick, although the absorbed light will increase, the photogenerated carriers are more likely to collide and recombine internally, meaning the number of carriers that can ultimately be collected and form a current signal may not increase, and could even decrease. In its collaborative operation with other functional layers, the chosen thickness facilitates a good working relationship with the electrode layer 20, the transparent conductive layer 40, and other layers.

[0042] In one embodiment, the transparent conductive layer 40 is made of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (ATO), gallium-doped zinc oxide (GTO), indium zinc oxide (ITO), cadmium oxide (CTO), or graphene. From a conductivity perspective, materials like indium tin oxide (ITO) possess a unique crystal structure and electronic state distribution that allows for high electron mobility, achieving good conductivity even at thicknesses of 10 nm to 200 nm. When a voltage bias is applied between the transparent conductive layer 40 and the electrode layer 20, electrons can move smoothly within the transparent conductive layer 40, working together with the electrode layer 20 to create a stable electric field environment that penetrates the absorption layer 30.

[0043] In terms of light transmittance, these materials exhibit high transparency for light in the solar-blind ultraviolet (EB) band. For example, fluorine-doped tin oxide, with its microstructure, ensures a certain level of conductivity without significantly hindering the propagation of EB. EB can smoothly pass through the transparent conductive layer 40 to reach the absorption layer 30. A thickness of 10nm-200nm ensures that the electric field has a suitable range of influence in the vertical direction, allowing charge carriers to be effectively separated and driven to move in the corresponding direction. It also avoids excessive thickness that would excessively weaken the transmission intensity of EB, affecting the light absorption and photoelectric conversion efficiency of the absorption layer 30. This achieves effective synergy between light and electricity throughout the device, ensuring the successful implementation of the detection function.

[0044] In some embodiments, the transparent conductive layer 40 is typically made of materials such as indium tin oxide (ITO), fluorine-doped tin oxide (FTO), or graphene, while the absorption layer 30 is made of lithium niobate. The difference in structure between the two layers forms a heterojunction. The heterojunction accelerates the separation and directional transport of photogenerated carriers, allowing electrons and holes to move more efficiently in opposite directions, thereby generating a current signal more quickly and improving the device's response speed. The formation of the heterojunction also enhances the absorption efficiency of the absorption layer 30 for specific wavelengths of solar-blind ultraviolet light. This means that more photogenerated carriers can be generated under the same light intensity, further improving the device's detection performance.

[0045] In one specific embodiment, the SiO2 layer 11 of the SiO2 / Si substrate 10 has a thickness of 300 nm, the Si layer 12 has a thickness of 500 μm, the adhesion layer is made of titanium with a thickness of 10 nm, the electrode layer 20 is made of gold with a thickness of 50 nm, the transparent conductive layer 40 is made of indium tin oxide with a thickness of 50 nm, and the absorption layer 30 is made of lithium niobate with a thickness of 100 nm. The bandgap of this solar-blind ultraviolet detector with this parameter combination was tested. When lithium niobate was characterized by photoluminescence (PL), the results shown in Figure 2 were obtained. The experimental results show that the peak of its photoluminescence spectrum corresponds to light with a wavelength of 315 nm, from which the corresponding bandgap can be calculated to be 3.94 eV. Therefore, as shown in Figure 1, when irradiated with solar-blind ultraviolet light (wavelength 266 nm) with an energy of 4.66 eV, the bandgap is higher than that of LiNbO3 (3.94 eV). The SiO2 / Si substrate 10 generates electron-hole pairs, which can be collected by voltage biasing to form a conductive circuit between the electrode layer 20 and the transparent conductive layer 40, thereby enabling the current sensor between the electrode layer 20 and the transparent conductive layer 40 to collect a signal.

[0046] As shown in Figure 3, the solar-blind ultraviolet detector of this specific embodiment was tested under both dark and illuminated conditions. With a 3V bias, the dark current of the device was 9pA. The photocurrent was determined by irradiating the device with 266nm wavelength ultraviolet light under different illumination powers. The formula for measuring the photocurrent is: I Photo =I illumination -I Dark

[0047] I Photo For photocurrent, I illumination I is the detection current under light illumination. Dark This is the dark current. Experimental results show that under different power irradiation, at an optical power of 80 mW / cm², 2 The corresponding maximum photocurrent is 0.828 nA. Furthermore, the responsivity of a device is an important parameter characterizing the efficiency of a photodetector in converting incident light into an electrical signal. Responsivity is defined as the ratio of output photocurrent to incident light power at a specific wavelength.

[0048] Where R is the responsiveness, P light This represents the incident light power.

[0049] For the solar-blind ultraviolet detector of this specific embodiment, Figure 4(a) shows the relationship between responsivity and optical power. It is clear from the figure that the responsivity increases with increasing illumination intensity. The maximum responsivity is 10.1 × mA / W. External quantum efficiency (EQE) is the ratio of the number of charge carriers (electrons or holes) generated and collected by the photodetector to the number of incident photons. Figure 4(b) shows that the external quantum efficiency EQE also exhibits a similar trend to the responsivity under different illumination powers. When the illumination power is 80 mW / cm², the responsivity increases. 2 At that time, the maximum EQE was 4.8%. Specific detectivity (D*) is a quality factor indicating the sensitivity of a photodetector. It is the detector's ability to detect weak signals and is normalized by the detector area and bandwidth. The maximum specific detectivity in the results of Figure 4(c) is 6.4 × 10⁻⁶. 9 Jones. Noise equivalent power (NEP) represents the incident light power required to produce a signal equal to the detector noise level, and it serves as a measure of the minimum detectable power. The minimum noise equivalent power in the results of Figure 4(d) is 1.5 × 10⁻⁶. -10 W / Hz -1 / 2 This indicates that the device can sense very weak light signals.

[0050] Please refer to Figure 5. This application provides a method for preparing a solar-blind ultraviolet detector, which is used in any of the above embodiments of the solar-blind ultraviolet detector. The preparation method includes steps S502 to S506.

[0051] S502, depositing an electrode layer on a SiO2 / Si substrate.

[0052] This step is understandably fundamental to constructing the electrical structure of the entire device. Deposition is a process that uses physical or chemical methods to coat a substrate surface with a specific material to form a thin film. The electrode layer is typically composed of one or more materials with good conductivity, such as gold, silver, platinum, palladium, copper, zinc, aluminum, and graphene. Its thickness is generally between 50 nm and 100 nm. Its main function is to conduct current, work with the subsequent transparent conductive layer to construct an electric field, and connect to external circuits, thus laying the electrical foundation for the normal operation of the solar-blind ultraviolet detector. The electrode layer can be deposited using physical vapor deposition (PVD), such as thermal evaporation, sputtering, and electron beam evaporation. Before step S502, an adhesion layer can be deposited on the SiO2 / Si substrate to increase the adhesion between the electrode layer and the substrate. The adhesion layer can be made of chromium or titanium and has a thickness of 5 nm to 10 nm. For SiO2 / Si substrates, mature wafer products can be selected, with SiO2 thickness ranging from 10nm to 500nm and Si thickness ranging from 100μm to 800μm.

[0053] Before starting step S502, the SiO2 / Si substrate must first be pretreated by ultrasonically cleaning it with an organic solvent (such as acetone, ethanol, etc.) to remove surface oil, impurities, etc., and then dried with high-purity nitrogen gas to ensure that the substrate surface is clean and dry. After depositing the electrode layer, deionized water can be used for cleaning.

[0054] S504 has an absorption layer deposited on the electrode layer, and the material of the absorption layer is lithium niobate.

[0055] It is understandable that the absorption layer material is lithium niobate, which is the key component that directly interacts with solar-blind ultraviolet light and performs photoelectric conversion. The deposition process also involves covering the existing electrode layer with a thin film of lithium niobate, designed to be 100 nm thick. The purpose is to enable the absorption layer to effectively absorb ultraviolet light and generate sufficient photogenerated carriers, which, in conjunction with the electrode layer and the transparent conductive layer, convert the optical signal into an electrical signal, thus achieving the detection function. Lithium niobate can be deposited using chemical vapor deposition (CVD), molecular beam epitaxy (MBE), or pulsed laser deposition (PLD). Taking chemical vapor deposition as an example, by introducing a gaseous precursor containing elements such as niobium and lithium, a chemical reaction occurs on the electrode layer surface under specific temperature, pressure, and catalyst conditions to generate and deposit lithium niobate. Once the absorption layer is formed, when exposed to solar-blind ultraviolet light, the photon energy can be absorbed by the absorption layer due to the photoelectric properties of lithium niobate and its suitable bandgap. This excites internal electrons to transition from the valence band to the conduction band, generating electron-hole pairs (photogenerated carriers). These photogenerated carriers then move directionally under the influence of the electric field created by the electrode layer and the subsequently deposited transparent conductive layer, forming a current signal and initiating the entire detection process. If further patterning is required, processes such as photoresist coating, exposure, development, and etching are necessary.

[0056] S506, a transparent conductive layer is deposited on the absorption layer.

[0057] Depositing a transparent conductive layer on the absorption layer is understandably the final and crucial step in the fabrication process of a solar-blind ultraviolet detector. Materials for this transparent conductive layer can include indium tin oxide, fluorine-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium zinc oxide, cadmium oxide, or graphene. The transparent conductive layer must possess excellent conductivity to allow electrons to move smoothly and work with the electrode layer to create an electric field, while also exhibiting high transparency to solar-blind ultraviolet light, ensuring that ultraviolet light can pass through and illuminate the absorption layer. This achieves effective synergy between optical and electrical aspects, enabling the detection of solar-blind ultraviolet light. The deposition of the transparent conductive layer can be achieved using processes such as sputtering, pulsed laser deposition, chemical vapor deposition, metal-organic chemical vapor deposition, sol-gel processes, spin coating, spray pyrolysis, atomic layer deposition, thermal evaporation, and electron beam evaporation.

[0058] Taking sputtering deposition as an example, the substrate with the deposited absorber layer must first undergo meticulous cleaning. This can be achieved through methods such as chemical solution cleaning combined with plasma cleaning to remove impurities and organic matter from the surface, improving surface cleanliness and activity, which facilitates the deposition of atoms in the transparent conductive layer material. Next, the substrate is placed on the sample stage of the sputtering equipment. A high-quality target material is prepared and installed according to the selected transparent conductive layer material (such as indium tin oxide). A suitable working gas (usually argon) is introduced into the sputtering chamber, and parameters such as gas flow rate, sputtering power, and substrate temperature are adjusted. By precisely controlling the sputtering time, the deposition thickness of the transparent conductive layer reaches the required thickness. During this process, equipment such as optical thin film thickness gauges can be used to monitor the thickness in real time to ensure that the design requirements are met.

[0059] In this application, lithium niobate was selected as the absorber material to fabricate the device, exhibiting excellent characteristics such as low dark current and good responsivity, and possessing the advantage of being suitable for industrial-scale production. Furthermore, by optimizing certain conditions, such as employing superior methods to improve crystal quality or using transparent conductive oxide (TCO) layers with calculable performance parameters, the device performance was further enhanced. Previously, due to the extremely low carrier mobility of lithium niobate, it was theoretically excluded from use as an absorber. However, this application, through a unique structural design and corresponding experimental verification, successfully overcame this technological prejudice. Although the bandgap of lithium niobate is not as wide as that of gallium oxide (4.78 eV), it is perfectly capable of achieving effective detection in the corresponding wavelength band in practical applications. More importantly, using lithium niobate to fabricate devices does not require advanced and costly processes to achieve the desired effect. This means that it exhibits significant advantages over other materials in terms of flexibility, production efficiency, and cost control.

[0060] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0061] The various embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. The various embodiments can be combined as needed, and the same or similar parts can be referred to each other.

[0062] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A solar-blind ultraviolet detector, characterized in that, include: SiO2 / Si substrate; An electrode layer is disposed on the SiO2 / Si substrate; An absorption layer is disposed on the electrode layer, and the material of the absorption layer is lithium niobate; A transparent conductive layer is disposed on the absorption layer, and a voltage bias is applied between the transparent conductive layer and the electrode layer.

2. The solar-blind ultraviolet detector according to claim 1, characterized in that, The thickness of SiO2 in the SiO2 / Si substrate is 10nm-500nm, and the thickness of Si is 100μm-800μm.

3. The solar-blind ultraviolet detector according to claim 1, characterized in that, It also includes an adhesion layer disposed between the electrode layer and the SiO2 / Si substrate.

4. The solar-blind ultraviolet detector according to claim 3, characterized in that, The adhesive layer is made of chromium or titanium and has a thickness of 5 nm to 10 nm.

5. The solar-blind ultraviolet detector according to claim 1, characterized in that, The thickness of the electrode layer is 50 nm to 100 nm.

6. The solar-blind ultraviolet detector according to claim 1, characterized in that, The thickness of the absorption layer is 2nm-1000nm.

7. The solar-blind ultraviolet detector according to claim 1, characterized in that, The material of the transparent conductive layer includes indium tin oxide, fluorine-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium zinc oxide, cadmium oxide, or graphene.

8. The solar-blind ultraviolet detector according to claim 7, characterized in that, The thickness of the transparent conductive layer is 10nm-200nm.

9. A method for preparing a solar-blind ultraviolet detector, characterized in that, The method for preparing the solar-blind ultraviolet detector according to any one of claims 1-8 comprises: Deposit an electrode layer on a SiO2 / Si substrate; An absorption layer is deposited on the electrode layer, and the material of the absorption layer is lithium niobate; A transparent conductive layer is deposited on the absorption layer.

10. The preparation method according to claim 9, characterized in that, The deposition of the electrode layer on the SiO2 / Si substrate includes: An adhesion layer is deposited on the SiO2 / Si substrate; The electrode layer is deposited on the adhesion layer.

Images