Solar cell
By patterning a first doped silicon layer on the surface of a silicon substrate in a solar cell to form cross regions and increase carrier transport paths, the problem of limited carrier transport in Poly Finger technology is solved, thereby improving cell conversion efficiency and short-circuit current.
WO2026113454A1PCT designated stage Publication Date: 2026-06-04CHINT NEW ENERGY TECH CO LTD
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- CHINT NEW ENERGY TECH CO LTD
- Filing Date
- 2025-07-25
- Publication Date
- 2026-06-04
Smart Images
Figure CN2025110521_04062026_PF_FP_ABST
Abstract
A solar cell, which relates to the field of photovoltaics, and comprises: a silicon substrate; and a patterned first doped silicon layer, which is located on at least one surface of the silicon substrate, such that the surface is partially provided with the first doped silicon layer while the rest of the surface is not provided with the first doped silicon layer. The first doped silicon layer comprises first regions and second regions, wherein at least some surfaces of the first regions are provided with grid lines, there are no grid lines in the second regions, and at least some of the first regions extend in a direction different from that of the second regions, so as to intersect with the second regions, the grid lines comprising fingers located in the first regions. In the present application, a first doped silicon layer comprises first regions and second regions, and therefore more carrier transport paths are provided, and a better transport performance for carriers in the first doped silicon layer is achieved, thereby optimizing the carrier transport paths and reducing the series resistance; and the conversion efficiency of solar cells using Poly Finger technology is further improved.
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