Lower electrode assembly and plasma processing device
By employing a separate first and second base design in the plasma processing device, combined with a heat insulation structure and independent cooling channels, the problem of temperature control of the edge ring assembly depending on the base was solved, achieving independent temperature control of the substrate and the edge ring assembly, and improving the uniformity of the etching rate.
WO2026113800A1PCT designated stage Publication Date: 2026-06-04ADVANCED MICRO FAB EQUIP INC CHINA
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Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- ADVANCED MICRO FAB EQUIP INC CHINA
- Filing Date
- 2025-10-29
- Publication Date
- 2026-06-04
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Figure CN2025130799_04062026_PF_FP_ABST
Abstract
A lower electrode assembly and a plasma processing device. The lower electrode assembly comprises: a first base, used for carrying a substrate, a first cooling channel being provided in the first base; a second base, provided at the periphery of the first base, the second base and the first base being two separate components, and a second cooling channel being provided in the second base; a thermal insulation structure, provided between the first base and the second base and used for independent temperature control of the first base and the second base; an edge ring assembly, provided above the second base; and an apparatus plate, provided below the first base and the second base, the first base and the second base being fixedly connected to the apparatus plate. The lower electrode assembly allows for independent control of the temperature of the edge ring assembly.
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