Micro light-emitting diode display chip and preparation method, and display device

Abstract

A micro light-emitting diode display chip and a preparation method, and a display device. The micro light-emitting diode display chip comprises a driving substrate (1), the driving substrate (1) comprising a plurality of contacts (101); a first light-emitting module (2) disposed on the driving substrate (1), wherein the first light-emitting module (2) comprises a plurality of first LED units (21) arranged in an array, the first LED units (21) being individually driven by means of the corresponding contacts (101); and a second light-emitting module (3), which is arranged on the driving substrate (1) and spaced apart from the first light-emitting module (2), wherein the second light-emitting module (3) and the first light-emitting module (2) are located in the same plane; and the second light-emitting module (3) comprises a plurality of second LED units (31) arranged in an array, the second LED units (31) being individually driven by means of the corresponding contacts (101). In the display chip of the present application, the first light-emitting module (2) and the second light-emitting module (3) located in the same plane are arranged on the driving substrate (1), and the color of light emitted by each light-emitting module is different, such that full-color display is achieved more easily, thereby reducing the preparation difficulty of a micro light-emitting display device.

Description

Miniature LED display chip and its fabrication method, display device

[0001] Cross-reference to related applications

[0002] This application claims priority to Chinese Patent Application No. 202411711763.7, filed on November 27, 2024, entitled “Miniature Light Emitting Diode Display Chip and Fabrication Method Thereof, Display Device”, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This application belongs to the field of micro-display technology, specifically relating to a micro light-emitting diode display chip, its fabrication method, and a display device. Background Technology

[0004] To achieve color projection, a three-color combining technique, which uses red, green, and blue light sources to synthesize a color image, was developed. This technique allows three independent light sources to control the color and brightness of each pixel, thus offering advantages such as high resolution and high brightness. Miniature light-emitting diode (LED) display chips not only have the characteristics of small size but also offer advantages such as high brightness, low power consumption, fast response, long lifespan, and high luminous efficiency, making them suitable as light sources for color projection. However, during the combining process, each independent light source requires precise alignment in both time and space to combine them into a seamless color image. However, alignment deviations in the independent light sources can lead to problems such as color misalignment, blurring, or artifacts in the image. Summary of the Invention

[0005] This application provides a micro light-emitting diode (LED) display chip, comprising a driving substrate, a first light-emitting module, and a second light-emitting module. The driving substrate includes multiple contacts. The first light-emitting module is disposed on the driving substrate and includes multiple arrayed first LED units; each first LED unit is individually driven through a corresponding contact. The second light-emitting module is disposed on the driving substrate and spaced apart from the first light-emitting module; the second light-emitting module and the first light-emitting module are located on the same plane. The second light-emitting module includes multiple arrayed second LED units, each second LED unit being individually driven through a corresponding contact. All first LED units in the first light-emitting module emit light of the same color, and all second LED units in the second light-emitting module emit light of the same color, but the colors of the light emitted by the first LED units and the second LED units are different.

[0006] In one specific embodiment of the first aspect of this application, the micro LED display chip further includes a third light-emitting module. The third light-emitting module is disposed on a driving substrate and spaced apart from the second light-emitting module on the side away from the first light-emitting module. The third light-emitting module, the second light-emitting module, and the first light-emitting module are all located on the same plane. The third light-emitting module includes a plurality of third LED units arranged in an array; each third LED unit is individually driven through corresponding contacts. All third LED units in the third light-emitting module emit light of the same color, and the color of the light emitted by each third LED unit is different from the color of the light emitted by at least one of the first LED units and the second LED unit.

[0007] In one specific embodiment of the first aspect of this application, the micro light-emitting diode display chip further includes a bonding layer disposed on a driving substrate, and any one of the first LED unit, the second LED unit, and the third LED unit is electrically connected to the bonding layer.

[0008] In one specific embodiment of the first aspect of this application, the first light-emitting module further includes a first passivation layer and a first electrode layer, the second light-emitting module further includes a second passivation layer and a second electrode layer, and the third light-emitting module further includes a third passivation layer and a third electrode layer. The first passivation layer covers the side of the bonding layer and the side of the first LED unit. The first electrode layer covers the side of the first passivation layer away from the first LED unit, and the first passivation layer electrically isolates the first electrode layer from either the first LED unit or the bonding layer. The first electrode layer is electrically connected to a corresponding contact and a portion of the top surface of the first LED unit, respectively. The second passivation layer covers the side of the bonding layer and the side of the second LED unit. The second electrode layer covers the side of the second passivation layer away from the second LED unit, and the second passivation layer electrically isolates the second electrode layer from either the second LED unit or the bonding layer. The second electrode layer is electrically connected to a corresponding contact and a portion of the top surface of the second LED unit, respectively. The third passivation layer covers the side of the bonding layer and the side of the third LED unit. The third electrode layer covers the side of the third passivation layer away from the third LED unit. The third passivation layer electrically isolates the third electrode layer from either the third LED unit or the bonding layer. The third electrode layer is electrically connected to the corresponding contact and part of the top surface of the third LED unit, respectively.

[0009] In one specific embodiment of the first aspect of this application, the driving substrate has a length direction, and a first light-emitting module, a second light-emitting module, and a third light-emitting module are arranged sequentially at intervals along the length direction. The first light-emitting module and the second light-emitting module have a minimum distance A along the length direction, and the second light-emitting module and the third light-emitting module have a minimum distance B along the length direction, satisfying: 0.1 micrometer ≤ A ≤ 10000 micrometers, and 0.1 micrometer ≤ B ≤ 10000 micrometers.

[0010] In one specific embodiment of the first aspect of this application, the driving substrate further has a width direction perpendicular to the length direction. In the first light-emitting module, a plurality of first LED units are spaced apart along the length and width directions, with a minimum distance a1 between adjacent first LED units along the length direction and a minimum distance a2 between adjacent first LED units along the width direction; in the second light-emitting module, a plurality of second LED units are spaced apart along the length and width directions, with a minimum distance b1 between adjacent second LED units along the length direction and a minimum distance b2 between adjacent second LED units along the width direction; in the third light-emitting module, a plurality of third LED units are spaced apart along the length and width directions, with a minimum distance c1 between adjacent third LED units along the length direction and a minimum distance c2 between adjacent third LED units along the width direction. The micro-LED display chip further satisfies at least one of the following features a) to f):

[0011] a) 0.1 micrometers ≤ a1 ≤ 100 micrometers;

[0012] b) 0.1 micrometers ≤ a2 ≤ 100 micrometers;

[0013] c) 0.1 micrometers ≤ b1 ≤ 100 micrometers;

[0014] d) 0.1 micrometers ≤ b2 ≤ 100 micrometers;

[0015] e) 0.1 micrometers ≤ c1 ≤ 100 micrometers;

[0016] f) 0.1 micrometers ≤ c2 ≤ 100 micrometers.

[0017] In one specific embodiment of the first aspect of this application, at least one of the first LED unit, the second LED unit, and the third LED unit is a stepped structure. The stepped structure includes a first doped semiconductor layer, a second doped semiconductor layer, and an active layer located between the two. The stepped structure disconnects and electrically isolates adjacent second doped semiconductor layers, active layers, and first doped semiconductor layers from each other, and the contacts are electrically connected to the corresponding first doped semiconductor layers.

[0018] In one specific embodiment of the first aspect of this application, the size of any one of the first LED unit, the second LED unit, and the third LED unit is 1 to 10 μm.

[0019] In one specific embodiment of the first aspect of this application, the driving substrate is a silicon-based CMOS driving board or a thin-film field-effect transistor driving board.

[0020] In one specific embodiment of the first aspect of this application, the first doped semiconductor layer is a p-type semiconductor layer and the second doped semiconductor layer is an n-type semiconductor layer.

[0021] In one specific embodiment of the first aspect of this application, an active layer is further provided between the first doped semiconductor layer and the second doped semiconductor layer. The active layer can be a multi-quantum well structure, which is used to confine electron and hole carriers to the quantum well region. When electrons and holes recombine, the carriers will emit photons after radiative recombination, thus converting electrical energy into light energy.

[0022] A second aspect of this application provides a method for fabricating a micro light-emitting diode (LED) display chip. The method includes: providing a driving substrate and dividing the driving substrate into at least a first light-emitting region and a second light-emitting region; the driving substrate including a plurality of contacts; forming a first epitaxial layer on the first light-emitting region; forming a second epitaxial layer on the second light-emitting region; processing the first epitaxial layer located in the first light-emitting region to form a first light-emitting module, wherein the first light-emitting module includes a plurality of arrayed first LED units, each first LED unit being individually driven through corresponding contacts; processing the second epitaxial layer located in the second light-emitting region to form a second light-emitting module, wherein the second light-emitting module and the first light-emitting module are located on the same plane and spaced apart, the second light-emitting module including a plurality of arrayed second LED units, each second LED unit being individually driven through corresponding contacts. All first LED units in the first light-emitting module emit light of the same color, and all second LED units in the second light-emitting module emit light of the same color, but the colors of the light emitted by the first LED units and the second LED units are different.

[0023] In one specific embodiment of the second aspect of this application, the driving substrate is further divided into a third light-emitting region. After the second epitaxial layer is applied to the second light-emitting region, the fabrication method further includes: forming a third epitaxial layer on the third light-emitting region; processing the third epitaxial layer located in the third light-emitting region to form a third light-emitting module, wherein the third light-emitting module is spaced apart from the side of the second light-emitting module away from the first light-emitting module, and is located on the same plane as both the second and first light-emitting modules. The third light-emitting module includes a plurality of third LED units arranged in an array, and each third LED unit is individually driven through corresponding contacts. All third LED units in the third light-emitting module emit light of the same color, and the color of the light emitted by the third LED unit is different from the color of the light emitted by at least one of the first and second LED units.

[0024] In one specific embodiment of the second aspect of this application, the step of forming a first epitaxial layer on a first light-emitting region further includes: providing a first substrate and forming a first epitaxial layer on the first substrate; forming a bonding layer on a driving substrate and / or the first epitaxial layer, bonding the driving substrate and the first epitaxial layer through the bonding layer to form a first epitaxial layer on the driving substrate, and removing the first substrate; etching the first epitaxial layer to remove the first epitaxial layer located in the second light-emitting region and the third light-emitting region, so as to retain the first epitaxial layer located in the first light-emitting region.

[0025] In one specific embodiment of the second aspect of this application, the step of forming a second epitaxial layer on a second light-emitting region further includes: providing a second substrate and forming a second epitaxial layer on the second substrate; etching the second epitaxial layer to remove the second epitaxial layer corresponding to the first light-emitting region and the third light-emitting region, while retaining the second epitaxial layer corresponding to the second light-emitting region; bonding the driving substrate and the second epitaxial layer through a bonding layer to form a second epitaxial layer on the second light-emitting region of the driving substrate, and removing the second substrate.

[0026] In one specific embodiment of the second aspect of this application, the step of forming a third epitaxial layer on a third light-emitting region further includes: providing a third substrate and forming a third epitaxial layer on the third substrate; forming a bonding layer on the third epitaxial layer; etching the third epitaxial layer to remove the third epitaxial layer corresponding to the first light-emitting region and the third light-emitting region, while retaining the third epitaxial layer corresponding to the third light-emitting region; bonding the driving substrate and the third epitaxial layer through the bonding layer to form a third epitaxial layer on the third light-emitting region of the driving substrate, and removing the third substrate.

[0027] In one specific embodiment of the second aspect of this application, the step of forming a first light-emitting module by processing a first epitaxial layer located in a first light-emitting region further includes: etching the first epitaxial layer to form a plurality of first LED units, the first LED units being arranged in an array on a bonding layer; forming a first passivation layer on the side of the first LED units and the side of the bonding layer; forming a first electrode layer on the side of the first passivation layer away from the first LED units, the first electrode layer being electrically connected to a corresponding contact and a portion of the top surface of the first LED unit, and the first passivation layer electrically isolating the first electrode layer from either the first LED unit or the bonding layer.

[0028] In one specific embodiment of the second aspect of this application, the step of processing the second epitaxial layer located in the second light-emitting region to form the second light-emitting module further includes: etching the second epitaxial layer to form a plurality of second LED units, the second LED units being arranged in an array on the bonding layer; forming a second passivation layer on the side of the second LED units and the side of the bonding layer; forming a second electrode layer on the side of the second passivation layer away from the second LED units, the second electrode layer being electrically connected to the corresponding contacts and a portion of the top surface of the second LED units, the second passivation layer electrically isolating the second electrode layer from either the second LED units or the bonding layer.

[0029] In one specific embodiment of the second aspect of this application, the step of forming a third light-emitting module by processing a third epitaxial layer located in the third light-emitting region further includes: etching the third epitaxial layer to form a plurality of third LED units, the third LED units being arranged in an array on a bonding layer; forming a third passivation layer on the side of the third LED units and the side of the bonding layer; forming a third electrode layer on the side of the third passivation layer away from the third LED units, the third electrode layer being electrically connected to the corresponding contacts and a portion of the top surface of the third LED units respectively, and the third passivation layer electrically isolating the third electrode layer from either the third LED units or the bonding layer.

[0030] A third aspect of this application provides a display device comprising the micro light-emitting diode display chip described in the first aspect, or comprising the micro light-emitting diode display chip obtained by the fabrication method described in the second aspect.

[0031] In one specific embodiment of the third aspect of this application, the light emission direction of the first light-emitting module and / or the second light-emitting module is a first direction, and the direction in which the first light-emitting module and the second light-emitting module are spaced apart is a second direction, wherein the first direction and the second direction intersect. The display device may further include a first light-combining module and a second light-combining module. The first light-combining module is correspondingly disposed with the first light-emitting module in the first direction, and the first light-combining module is used to convert the light emitted by the first light-emitting module from the first direction to the second direction for emission. The second light-combining module is spaced apart from the first light-combining module in the second direction and located on the same plane, and the second light-combining module is correspondingly disposed with the second light-emitting module in the first direction, and the second light-combining module is used to convert the light emitted by the second light-emitting module from the first direction to the second direction for emission, and to allow the light emitted by the first light-emitting module to pass through.

[0032] In one specific embodiment of the third aspect of this application, the display device further includes a third light-combining module, which is spaced apart from the second light-combining module on the side away from the first light-combining module along a second direction. The third light-combining module, the first light-combining module, and the second light-combining module are located on the same plane. The third light-combining module and the third light-emitting module are correspondingly arranged in a first direction. The third light-combining module is used to convert the light emitted by the third light-emitting module from the first direction to the second direction for emission, and to allow the light emitted by the first light-emitting module and the second light-emitting module to pass through.

[0033] In one specific embodiment of the third aspect of this application, a first light-combining module has a first optical film facing the first light-emitting module, and the orthogonal projection of the first optical film on the driving substrate along a first direction covers the first light-emitting module; a second light-combining module has a second optical film facing the second light-emitting module, and the orthogonal projection of the second optical film on the driving substrate along the first direction covers the second light-emitting module; a third light-combining module has a third optical film facing the third light-emitting module, and the orthogonal projection of the third optical film on the driving substrate along the first direction covers the third light-emitting module.

[0034] In one specific embodiment of the third aspect of this application, the first optical film is inclined relative to the surface of the first light-emitting module, the second optical film is inclined relative to the surface of the second light-emitting module, and the third optical film is inclined relative to the surface of the third light-emitting module. The first light-emitting surface, the second optical film, and the third optical film are arranged parallel to each other.

[0035] Compared with existing technologies, the micro light-emitting diode (LED) display chip of this application includes a driving substrate, a first light-emitting module, and a second light-emitting module. The driving substrate includes multiple contacts. The first light-emitting module is disposed on the driving substrate and includes multiple arrayed first LED units, each driven individually through a corresponding contact. The second light-emitting module is disposed on the driving substrate and spaced apart from the first light-emitting module. The second light-emitting module and the first light-emitting module are located on the same plane. The second light-emitting module includes multiple arrayed second LED units; each second LED unit is driven individually through a corresponding contact. All first LED units in the first light-emitting module emit light of the same color, and all second LED units in the second light-emitting module emit light of the same color, but the colors of the light emitted by the first LED units and the second LED units are different. In the display chip of this application, the first and second light-emitting modules located on the same plane on the driving substrate, and the different colors of light emitted by each light-emitting module, make full-color display easier to achieve and reduce the fabrication difficulty of micro light-emitting display devices.

[0036] This application discloses a method for fabricating a micro-light-emitting diode (LED) display chip. The method includes: providing a driving substrate and dividing the driving substrate into at least a first light-emitting region and a second light-emitting region; the driving substrate includes multiple contacts; forming a first epitaxial layer on the first light-emitting region; forming a second epitaxial layer on the second light-emitting region; processing the first epitaxial layer located in the first light-emitting region to form a first light-emitting module, the first light-emitting module including multiple arrayed first LED units, each first LED unit being individually driven through corresponding contacts; processing the second epitaxial layer located in the second light-emitting region to form a second light-emitting module, the second light-emitting module and the first light-emitting module being located on the same plane and spaced apart, the second light-emitting module including multiple arrayed second LED units, each second LED unit being individually driven through corresponding contacts; wherein all first LED units in the first light-emitting module emit light of the same color, all second LED units in the second light-emitting module emit light of the same color, and the color of light emitted by the first LED units is different from the color of light emitted by the second LED units. This fabrication method sets up light-emitting modules capable of emitting different colors of light on the same plane of the driving substrate, realizing multi-color display of the chip and improving the chip's compactness and space utilization.

[0037] The display device provided in this application includes a micro light-emitting diode display chip, a first light-combining module, and a second light-combining module. The light emission direction of the first light-emitting module and / or the second light-emitting module is a first direction, and the direction in which the first light-emitting module and the second light-emitting module are spaced apart is a second direction, with the first direction intersecting the second direction. The first light-combining module is correspondingly arranged with the first light-emitting module in the first direction, and the first light-combining module is used to convert the light emitted by the first light-emitting module from the first direction to the second direction for emission. The second light-combining module is spaced apart from the first light-combining module in the second direction and located on the same plane, and the second light-combining module is correspondingly arranged with the second light-emitting module in the first direction, and the second light-combining module is used to convert the light emitted by the second light-emitting module from the first direction to the second direction for emission, and to allow the light emitted by the first light-emitting module to pass through. The display device of this application arranges light-emitting modules that emit different colors of light on the same driving substrate, so that the light emitted by the light-emitting modules is already aligned on the surface along the second direction. The light combining of multiple colors of light can be completed by adjusting the angle and front-back distance of the first light combining module and the second light combining module. Compared with the light combining structure of multiple independent display chips through prisms, the alignment difficulty of this application is greatly improved, and the structure of the light combining module is simpler, which has a wide range of application scenarios. Attached Figure Description

[0038] The technical solution and other beneficial effects of this application will become apparent from the following detailed description of specific embodiments in conjunction with the accompanying drawings.

[0039] Figure 1 shows a top view of the micro light-emitting diode display chip provided in an embodiment of this application.

[0040] Figure 2 shows a cross-sectional schematic diagram of the micro light-emitting diode display chip provided in an embodiment of this application.

[0041] Figure 3 shows a cross-sectional schematic diagram of the driving substrate provided in an embodiment of this application.

[0042] Figure 4 shows a cross-sectional schematic diagram of the first substrate provided in an embodiment of this application.

[0043] Figure 5 shows a schematic diagram of the bonding between the first substrate and the driving substrate.

[0044] Figure 6 shows a schematic diagram of the structure after the first substrate is bonded to the driving substrate and then the first substrate is removed.

[0045] Figure 7 shows a schematic diagram of etching to remove the first epitaxial layer located in the second and third luminescent regions.

[0046] Figure 8 shows a schematic diagram of the structure in which the first epitaxial layer is formed on the first luminescent region.

[0047] Figure 9 shows a cross-sectional schematic diagram of the second substrate provided in an embodiment of this application.

[0048] Figure 10 shows a schematic diagram of etching away the second epitaxial layer corresponding to the first luminescent region and the third luminescent region.

[0049] Figure 11 shows a schematic diagram of the bonding between the second substrate and the driving substrate.

[0050] Figure 12 shows a schematic diagram of the structure in which a second epitaxial layer is formed on the second luminescent region.

[0051] Figure 13 shows a cross-sectional schematic diagram of the third substrate provided in an embodiment of this application.

[0052] Figure 14 shows a schematic diagram of etching away the third epitaxial layer corresponding to the first luminescent region and the second luminescent region.

[0053] Figure 15 shows a schematic diagram of the bonding between the third substrate and the driving substrate.

[0054] Figure 16 shows a schematic diagram of the structure in which the third epitaxial layer is formed on the third luminescent region.

[0055] Figure 17 shows a schematic diagram of the structure formed by processing the first LED unit, the second LED unit, and the third LED unit.

[0056] Figure 18 shows a schematic diagram of the structure of the display device provided in an embodiment of this application.

[0057] Figure 19 shows a schematic diagram of the light combining principle of the display device.

[0058] Explanation of reference numerals in the attached drawings: 1-Driver substrate; 100-Common contact; 101-Contact; 102-First doped semiconductor layer; 103-Second doped semiconductor layer; 104-Active layer; 2-First light-emitting module; 21-First LED unit; 22-First passivation layer; 23-First electrode layer; 3-Second light-emitting module; 31-Second LED unit; 32-Second passivation layer; 33-Second electrode layer; 4-Third light-emitting module; 41-Third LED unit; 42-Third passivation layer ; 43-Third electrode layer; 5-Bonding layer; 6-First substrate; 61-First epitaxial layer; 7-Second substrate; 71-Second epitaxial layer; 8-Third substrate; 81-Third epitaxial layer; 9-Mask layer; 200-First light-emitting region; 300-Second light-emitting region; 400-Third light-emitting region; 20-First light-combining module; 30-Second light-combining module; 40-Third light-combining module; 201-First optical film; 301-Second optical film; 401-Third optical film. Detailed Implementation

[0059] In at least one embodiment of this application, referring to Figures 1 and 2, the micro LED display chip includes a driving substrate 1, a first light-emitting module 2, and a second light-emitting module 3. The driving substrate 1 includes multiple contacts 101. The first light-emitting module 2 is disposed on the driving substrate 1 and includes multiple arrayed first LED units 21, each driven individually through a corresponding contact. The second light-emitting module 3 is disposed on the driving substrate 1 and spaced apart from the first light-emitting module 2. The second light-emitting module 3 and the first light-emitting module 2 are located on the same plane. The second light-emitting module 3 includes multiple arrayed second LED units 31, each driven individually through a corresponding contact 101. All first LED units 21 in the first light-emitting module 2 emit light of the same color, and all second LED units 31 in the second light-emitting module 3 emit light of the same color, but the colors of the light emitted by the first LED units 21 and the second LED units 31 are different.

[0060] It is understood that in the display chip of this application, the first light-emitting module 2 and the second light-emitting module 3 located on the same plane on the driving substrate 1 make the entire display system more compact and simplified; since each light-emitting module emits a different color of light, full-color display is easier to achieve, reducing the fabrication difficulty of micro light-emitting display devices. The first LED unit 21 and the second LED unit 31 are driven individually through corresponding contacts 101. This independent driving design can reduce mutual interference and influence, and improve the accuracy and stability of bonding.

[0061] In some embodiments, referring to Figures 1 and 2, the micro LED display chip further includes a third light-emitting module 4. The third light-emitting module 4 is disposed on the driving substrate 1 and spaced apart from the side of the second light-emitting module 3 away from the first light-emitting module 2. The third light-emitting module 4, the second light-emitting module 3, and the first light-emitting module 2 are all located on the same plane. The third light-emitting module 4 includes a plurality of arrayed third LED units 41, and each third LED unit 41 is individually driven through a corresponding contact 101. All third LED units 41 in the third light-emitting module 4 emit light of the same color, and the color of the light emitted by the third LED unit 41 is different from the color of the light emitted by at least one of the first LED unit 21 and the second LED unit 31.

[0062] Understandably, by setting up a third light-emitting module 4, the types of light emitted by the display chip can be further expanded to achieve full-color display. The third light-emitting module 4, the second light-emitting module 3, and the first light-emitting module 2 are all located on the same plane, which can further reduce the connection and wiring between components and optimize the compactness of the structure.

[0063] In some embodiments, the “~” symbol in the drawings represents multiple repeated structures that have been omitted, where multiple specifically refers to a number of two or more.

[0064] In some embodiments, referring to FIG2, the micro LED display chip further includes a bonding layer 5 disposed on the driving substrate 1, and any one of the first LED unit 21, the second LED unit 31, and the third LED unit 41 is electrically connected to the bonding layer 5. The bonding layer 5 is an adhesive material layer, and also serves to conduct electricity by being electrically connected to the first LED unit 21, the second LED unit 31, and the third LED unit 41. The material of the bonding layer 5 is metal or a metal alloy. In some embodiments, the bonding layer 5 may include Au, Ag, Cu, Al, and their alloys, but is not limited thereto.

[0065] In some embodiments, referring to FIG2, the first light-emitting module 2 further includes a first passivation layer 22 and a first electrode layer 23. The first passivation layer 22 covers the side of the bonding layer 5 and the side of the first LED unit 21. The first electrode layer 23 covers the side of the first passivation layer 22 away from the first LED unit 21. The first passivation layer 22 electrically isolates the first electrode layer 23 from either the first LED unit 21 or the bonding layer 5. The first electrode layer 23 is electrically connected to the corresponding contact 101 and a portion of the top surface of the first LED unit 21, respectively.

[0066] In some embodiments, referring to FIG2, the second light-emitting module 3 further includes a second passivation layer 32 and a second electrode layer 33. The second passivation layer 32 covers the side of the bonding layer 5 and the side of the second LED unit 31. The second electrode layer 33 covers the side of the second passivation layer 32 away from the second LED unit 31. The second passivation layer 32 electrically isolates the second electrode layer 33 from either the second LED unit 31 or the bonding layer 5. The second electrode layer 33 is electrically connected to the corresponding contact 101 and a portion of the top surface of the second LED unit 31, respectively.

[0067] In some embodiments, referring to FIG2, the third light-emitting module 4 further includes a third passivation layer 42 and a third electrode layer 43. The third passivation layer 42 covers the side of the bonding layer 5 and the side of the third LED unit 41. The third electrode layer 43 covers the side of the third passivation layer 42 away from the third LED unit 41. The third passivation layer 42 electrically isolates the third electrode layer 43 from either the third LED unit 41 or the bonding layer 5. The third electrode layer 43 is electrically connected to the corresponding contact 101 and a portion of the top surface of the third LED unit 41, respectively.

[0068] In some embodiments, the materials of the first passivation layer 22, the second passivation layer 32, and the third passivation layer 42 are selected from inorganic materials or organic materials to isolate and protect the corresponding LED units. The inorganic materials include any one or a combination of SiO2, Al2O3, ZrO2, TiO2, Si3N4, and HfO2; the organic materials include any one or a combination of black matrix photoresist, color filter photoresist, polyimide, BANK, overcoat, near-ultraviolet negative photoresist, and styrene.

[0069] In some embodiments, the first electrode layer 23, the second electrode layer 33, and the third electrode layer 43 are made of at least one of indium tin oxide, Cr, Ti, Pt, Au, Al, Cu, Ge, or Ni.

[0070] In some embodiments, referring to FIG1, the driving substrate 1 has a length direction X, and the first light-emitting module 2, the second light-emitting module 3, and the third light-emitting module 4 are arranged sequentially at intervals along the length direction X. The first light-emitting module 2 and the second light-emitting module 3 have a minimum distance A along the length direction X, and the second light-emitting module 3 and the third light-emitting module 4 have a minimum distance B along the length direction X, satisfying: 10 - 6 ≤A / B≤10 6 .

[0071] In some embodiments, the range of A / B can be 10. -6 10 -5 10 -4 10-3 10 -2 10 -1 1, 10, 100, 1000, 10 4 10 5 10 6 The range between any one or any two values ​​in the range. It can be understood that when 10 is satisfied... -6 ≤A / B≤10 6 When the range is within the specified range, it can be ensured that the first light-emitting module 2, the second light-emitting module 3 and the third light-emitting module 4 can emit light independently and the emitted light will not interfere with each other, so as not to affect the light output efficiency.

[0072] In some embodiments, the minimum distance A between the first light-emitting module 2 and the second light-emitting module 3 along the length direction X further satisfies: 0.1 micrometers ≤ A ≤ 10000 micrometers. In some other embodiments, A further satisfies: 1 micrometer ≤ A ≤ 1000 micrometers. In some other embodiments, A further satisfies: 10 micrometers ≤ A ≤ 100 micrometers.

[0073] In some embodiments, the minimum distance B between the second light-emitting module 3 and the third light-emitting module 4 along the length direction X further satisfies: 0.1 μm ≤ B ≤ 10000 μm. In some other embodiments, B further satisfies: 1 μm ≤ B ≤ 1000 μm. In some other embodiments, B further satisfies: 10 μm ≤ B ≤ 100 μm.

[0074] In some embodiments, referring to FIG1, the driving substrate 1 further has a width direction Y perpendicular to the length direction X. In the first light-emitting module 2, a plurality of first LED 21 units are respectively arranged at intervals along the length direction X and the width direction Y. Adjacent first LED units 21 have a minimum distance a1 along the length direction X and a minimum distance a2 along the width direction Y, satisfying: 0.1 μm ≤ a1 ≤ 100 μm, and 0.1 μm ≤ a2 ≤ 100 μm. It can be understood that when the above ranges are satisfied, it can be ensured that the first LED units 21 are arranged compactly and do not affect each other's light-emitting effect, avoiding light crosstalk. In some other embodiments, it is further satisfied that: 1 μm ≤ a1 ≤ 10 μm, and 1 μm ≤ a2 ≤ 10 μm.

[0075] In some embodiments, referring to FIG1, in the second light-emitting module 3, a plurality of second LED units 31 are respectively arranged at intervals along the length direction X and the width direction Y. Adjacent second LED units 31 have a minimum distance b1 along the length direction X and a minimum distance b2 along the width direction Y, satisfying: 0.1 μm ≤ b1 ≤ 100 μm, and 0.1 μm ≤ b2 ≤ 100 μm. It is understood that when the above ranges are met, the second LED units 31 can be arranged compactly without affecting each other's light-emitting effect, avoiding light crosstalk. In some other embodiments, the following is further satisfied: 1 μm ≤ b1 ≤ 10 μm, and 1 μm ≤ b2 ≤ 10 μm.

[0076] In some embodiments, referring to FIG1, in the third light-emitting module 4, a plurality of third LED units 41 are respectively arranged at intervals along the length direction X and the width direction Y. Adjacent third LED units 41 have a minimum distance c1 along the length direction X, and adjacent third LED units 42 have a minimum distance c2 along the width direction Y, satisfying: 0.1 μm ≤ c1 ≤ 100 μm, and 0.1 μm ≤ c2 ≤ 100 μm. It can be understood that when the above ranges are met, the third LED units 42 can be arranged compactly without affecting each other's light-emitting effect, avoiding light crosstalk. In some other embodiments, the following is further satisfied: 1 μm ≤ c1 ≤ 10 μm, and 1 μm ≤ c2 ≤ 10 μm.

[0077] In some embodiments, referring to FIG16, at least one of the first LED unit 21, the second LED unit 31, and the third LED unit 41 has a stepped structure. The stepped structure includes a first doped semiconductor layer 102, a second doped semiconductor layer 103, and an active layer 104 located between them. The stepped structure disconnects and electrically isolates adjacent second doped semiconductor layers 103, active layers 104, and first doped semiconductor layers 102 from each other, and the contact 101 is electrically connected to the corresponding first doped semiconductor layer 102. It is understood that the stepped structure can prevent current interference between adjacent LED units, improving the independence and stability of the LED units.

[0078] In some embodiments, at least one of the first LED unit 21, the second LED unit 31, and the third LED unit 41 may have a trapezoidal structure, that is, the sidewall of at least one of the first LED unit 21, the second LED unit 31, and the third LED unit 41 may be an inclined plane, and the angle between the sidewall and the top surface may be an obtuse angle, thereby improving the light-gathering effect of the LED unit. It should be understood that at least one of the first LED unit 21, the second LED unit 31, and the third LED unit 41 may also have a columnar structure, in which case the angle between the sidewall and the top surface of the LED unit is a right angle.

[0079] In some embodiments, the first doped semiconductor layer 102 and the second doped semiconductor layer 104 may include one or more layers based on IIVI materials (such as ZnSe or ZnO) or IIIV nitride materials (such as GaN, AlN, InN, InGaN, GaP, AlInGaP, AlGaAs and alloys thereof).

[0080] In some embodiments, the first doped semiconductor layer 102 may be p-type GaN. In some embodiments, the first doped semiconductor layer 102 may be p-type InGaN. In some embodiments, the first doped semiconductor layer 102 may be p-type AlInGaP.

[0081] In some embodiments, the second doped semiconductor layer 104 may be n-type GaN. In some embodiments, the second doped semiconductor layer 104 may be n-type InGaN. In some embodiments, the second doped semiconductor layer 104 may be n-type AlInGaP.

[0082] In some embodiments, the active layer 103 is the active region of the LED unit. The active layer 103 is disposed between the first doped semiconductor layer 102 and the second doped semiconductor layer 104 and provides light. The active layer 103 is a layer that recombines holes and electrons provided from the first doped semiconductor layer 102 and the second doped semiconductor layer 104 respectively and outputs light of a specific wavelength, and the active layer 103 may have a single quantum well structure or a multiple quantum well (MQW) structure and alternating stacked well layers and barrier layers.

[0083] In some embodiments, the size of any one of the first LED unit 21, the second LED unit 31, and the third LED unit 41 is 1 to 10 μm; for example, the size is any one or any two values ​​of 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, and 10 μm.

[0084] In some embodiments, the driving substrate 1 is a silicon-based CMOS driving board or a thin-film field-effect transistor driving board.

[0085] In some embodiments, any one of the first LED unit 21, the second LED unit 31, and the third LED unit 41 can emit any one of red light, green light, blue light, yellow light, or ultraviolet light.

[0086] In some embodiments, referring to FIG3, the driving substrate 1 further includes a common contact 100, which can be a cathode metal contact, and a contact 101 can be an anode metal contact. The contact 101 is independently connected to each LED unit, and an anode voltage is applied to provide a separate driving signal, thereby achieving the purpose of individually controlling the light emission of each LED unit.

[0087] In some embodiments, a method for fabricating a micro light-emitting diode display chip is provided, comprising:

[0088] A driving substrate 1 is provided, and the driving substrate 1 is divided into at least a first light-emitting region 200 and a second light-emitting region 300. The driving substrate 1 includes a plurality of contacts 101.

[0089] A first epitaxial layer 61 is formed on the first light-emitting region 200;

[0090] A second epitaxial layer 71 is formed on the second light-emitting region 300;

[0091] A first epitaxial layer 61 located in the first light-emitting region 200 is processed to form a first light-emitting module 2. The first light-emitting module 2 includes a plurality of first LED units 21 arranged in an array. Each first LED unit 21 is driven individually through a corresponding contact 101.

[0092] The second epitaxial layer 71 located in the second light-emitting region 300 is processed to form the second light-emitting module 3. The second light-emitting module 3 and the first light-emitting module 2 are located on the same plane and are spaced apart. The second light-emitting module 3 includes a plurality of arrayed second LED units 31. The second LED units 31 are driven individually through corresponding contacts 101.

[0093] In the above preparation method, all the first LED units 21 in the first light-emitting module 2 emit light of the same color, all the second LED units 31 in the second light-emitting module 3 emit light of the same color, and the color of the light emitted by the first LED unit 21 is different from the color of the light emitted by the second LED unit 31.

[0094] It is understood that the fabrication method of this application sets up light-emitting modules capable of emitting different colors of light on the same plane of the driving substrate 1, thereby realizing the display of multiple colors of the chip and improving the compactness and space utilization of the chip.

[0095] In some embodiments, the driving substrate 1 is further divided into a third light-emitting region 400, and after forming a second epitaxial layer 71 on the second light-emitting region 300, the fabrication method may further include:

[0096] A third epitaxial layer 81 is formed on the third light-emitting region 400;

[0097] The third epitaxial layer 81 located in the third light-emitting region 400 is processed to form the third light-emitting module 4. The third light-emitting module 4 is spaced apart from the second light-emitting module 3 on the side away from the first light-emitting module 2, and is located on the same plane as both the second light-emitting module 3 and the first light-emitting module 2. The third light-emitting module 4 includes multiple arrayed third LED units 41, and each third LED unit 41 is driven individually through a corresponding contact 101.

[0098] In the above preparation method, all the third LED units 41 in the third light-emitting module 4 emit light of the same color, and the color of the light emitted by the third LED unit 41 is different from the color of the light emitted by at least one of the first LED unit 21 and the second LED unit 31.

[0099] In some embodiments, the step of forming a first epitaxial layer 61 on the first light-emitting region 200 further includes: referring to FIG4, providing a first substrate 6 and forming a first epitaxial layer 61 on the first substrate 6.

[0100] The first substrate 6 can be a silicon substrate or a sapphire substrate. The specific process for forming the first epitaxial layer 61 on the first substrate 6 is as follows: an n-type layer, an activation layer, and a p-type layer are deposited on the first substrate 6, respectively. These layers can be grown using methods such as metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy. Precise deposition and thin film thickness control can be achieved by controlling parameters such as temperature, flow rate, and reaction time.

[0101] Referring to Figures 3, 5, and 6, the driving substrate 1 is a complementary metal-oxide-semiconductor (CMOS) device. The CMOS device can form a driving circuit on the driving substrate 1. A bonding layer 5 is formed on the driving substrate 1 and the first epitaxial layer 61. The driving substrate 1 and the first epitaxial layer 61 are bonded together through the bonding layer 5 to form the first epitaxial layer 61 on the first light-emitting region 200 of the driving substrate 1, and the first substrate 6 is removed. Through the fusion of the bonding layer 5, the first epitaxial layer 61 can be bonded to the driving substrate 1. Then, the driving substrate 1 is peeled off, achieving bonding between the driving substrate 1 and the first epitaxial layer 61 through the bonding layer 5. Lifting methods include, but are not limited to, laser lift-off, dry etching, wet etching, and mechanical polishing. The bonding layer 5 can be prepared by atomic layer deposition (ALD), chemical vapor deposition (CVD), evaporation, sputtering, etc. In some embodiments, the first epitaxial layer 61 after flipping also needs to be thinned, including dry etching, wet etching or mechanical polishing.

[0102] Referring to Figures 7 and 8, the first epitaxial layer 61 located in the second light-emitting region 300 and the third light-emitting region 400 is removed by etching, while the first epitaxial layer 61 located on the first light-emitting region 200 is retained. The etching is a dry etching process, wherein a mask layer 9 is provided on the first epitaxial layer 61 located on the first light-emitting region 200, and then the removal of the first epitaxial layer 61 in the second light-emitting region 300 and the third light-emitting region 400 is achieved by dry etching.

[0103] Referring to Figure 9, a second substrate 7 is provided, and a second epitaxial layer 71 is formed on the second substrate 7. The second substrate 7 can be a silicon substrate or a sapphire substrate. The specific process for forming the second epitaxial layer 71 on the second substrate 7 is as follows: an n-type layer, an activation layer, and a p-type layer are deposited on the second substrate 7, respectively. These layers can be grown using methods such as metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy. Precise deposition and thin film thickness control can be achieved by controlling parameters such as temperature, flow rate, and reaction time.

[0104] Referring to Figure 9, a bonding layer 5 is formed on the second epitaxial layer 71. The bonding layer 5 can be prepared by atomic layer deposition (ALD), chemical vapor deposition (CVD), evaporation, sputtering, or other methods.

[0105] Referring to Figure 10, the second epitaxial layer 71 corresponding to the first light-emitting region 200 and the third light-emitting region 400 is removed by etching, while the second epitaxial layer 71 corresponding to the second light-emitting region 300 is retained. The etching method can be dry etching or wet etching.

[0106] Referring to Figures 11 and 12, the driving substrate 1 and the second epitaxial layer 71 are bonded together by the bonding layer 5 to form the second epitaxial layer 71 on the second light-emitting region 300 of the driving substrate 1, and the second substrate 7 is removed. The bonding method can be the same as the method of forming the first epitaxial layer 61.

[0107] Referring to Figure 13, a third substrate 8 is provided, and a third epitaxial layer 81 is formed on the third substrate 8. The third substrate 8 can be a silicon substrate or a sapphire substrate. The specific process for forming the third epitaxial layer 81 on the third substrate 8 is as follows: an n-type layer, an activation layer, and a p-type layer are deposited on the third substrate 8, respectively. These layers can be grown using methods such as metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy. Precise deposition and thin film thickness control can be achieved by controlling parameters such as temperature, flow rate, and reaction time.

[0108] Referring to Figure 13, a bonding layer 5 is formed on the third epitaxial layer 81. The bonding layer 5 can be prepared by atomic layer deposition (ALD), chemical vapor deposition (CVD), evaporation, sputtering, or other methods.

[0109] Referring to Figure 14, the third epitaxial layer 81 corresponding to the first light-emitting region 200 and the second light-emitting region 300 is removed by etching, while the third epitaxial layer 81 corresponding to the third light-emitting region 400 is retained.

[0110] Referring to Figures 15 and 16, the driving substrate 1 and the third epitaxial layer 81 are bonded together by the bonding layer 5 to form the third epitaxial layer 81 on the third light-emitting region 400 of the driving substrate 1, and the third substrate 8 is removed. The bonding is formed in the same way as the first epitaxial layer 61.

[0111] In some embodiments, the step of forming a first light-emitting module 2 by processing a first epitaxial layer 61 located in the first light-emitting region 200 further includes: referring to FIG17 and FIG2, etching the first epitaxial layer 61 to form a plurality of first LED units 21, the first LED units 21 being arranged in an array on the bonding layer 5; forming a first passivation layer 22 on the side surface of the first LED units 21 and the side surface of the bonding layer 5; and forming a first electrode layer 23 on the side of the first passivation layer 22 away from the first LED units 21. The first electrode layer 23 is electrically connected to the corresponding contact 101 and a portion of the top surface of the first LED unit 22, respectively, and the first passivation layer 22 electrically isolates the first electrode layer 23 from either the first LED unit 21 or the bonding layer 5.

[0112] In some embodiments, the step of forming a second light-emitting module 3 by processing a second epitaxial layer 71 located in the second light-emitting region 300 further includes: referring to Figures 17 and 2, etching the second epitaxial layer 71 to form a plurality of second LED units 31, the second LED units 31 being arranged in an array on the bonding layer 5; forming a second passivation layer 32 on the side surfaces of the second LED units 31 and the side surfaces of the bonding layer 5; and forming a second electrode layer 33 on the side of the second passivation layer 32 away from the second LED units 31. The second electrode layer 33 is electrically connected to the corresponding contact 101 and a portion of the top surface of the second LED unit 31, respectively, and the second passivation layer 32 electrically isolates the second electrode layer 33 from either the second LED unit 31 or the bonding layer 5.

[0113] In some embodiments, the step of forming a third light-emitting module 3 by processing a third epitaxial layer 81 located in the third light-emitting region 400 further includes: referring to Figures 17 and 2, etching the third epitaxial layer 81 to form a plurality of third LED units 41, the third LED units 41 being arranged in an array on the bonding layer 5; forming a third passivation layer 42 on the side surfaces of the third LED units 41 and the side surfaces of the bonding layer 5; and forming a third electrode layer 43 on the side of the third passivation layer 42 away from the third LED units 41. The third electrode layer 43 is electrically connected to the corresponding contact 101 and a portion of the top surface of the third LED unit 41, respectively, and the third passivation layer 42 electrically isolates the third electrode layer 43 from either the third LED unit 41 or the bonding layer 5.

[0114] In some embodiments, a MESA pattern can be designed based on a patterned mask to etch the first epitaxial layer 61, the second epitaxial layer 71, and the third epitaxial layer 81 to form a first LED unit 21, a second LED unit 31, and a third LED unit 41 with multiple stepped structures. The first passivation layer 22, the second passivation layer 32, and the third passivation layer 42 can be formed by deposition, sputtering, or other methods. The passivation layer can be used to form a protective structure on the surface of the LED unit to prevent contaminants etched during subsequent etching processes from sputtering onto the surface of the LED unit.

[0115] It should be noted that the embodiments of this application do not specifically limit the order of steps in the fabrication method of the micro light-emitting diode display chip.

[0116] The embodiments of the manufacturing method in this application only describe the manufacturing process or steps. Device structures, shapes, and materials not described can be referred to the above embodiments of the micro light-emitting diode display chip, and will not be repeated here.

[0117] Referring to Figures 18 and 19, this application provides a display device including the micro light-emitting diode display chip in the aforementioned embodiments. The light emission direction of the first light-emitting module 2 and the second light-emitting module 3 is a first direction U, and the direction in which the first light-emitting module 2 and the second light-emitting module 3 are spaced apart is a second direction V. The first direction U and the second direction V intersect.

[0118] In some embodiments, the display device further includes a first light-combining module 20 and a second light-combining module 30. The first light-combining module 20 is disposed corresponding to the first light-emitting module 2 in a first direction U, and the first light-combining module 20 is used to convert the light emitted by the first light-emitting module 2 from the first direction U to be emitted in a second direction V. The second light-combining module 30 is disposed at a distance from the first light-combining module 20 in the second direction V and is located on the same plane. The second light-combining module 30 is disposed corresponding to the second light-emitting module 3 in the first direction U, and the second light-combining module 30 is used to convert the light emitted by the second light-emitting module 3 from the first direction U to be emitted in the second direction V, and to allow the light emitted by the first light-emitting module 2 to pass through.

[0119] In some embodiments, the display device further includes a third light-combining module 40, which is disposed along a second direction V on the side of the second light-combining module 30 away from the first light-combining module 20. The third light-combining module 40, the first light-combining module 20, and the second light-combining module 30 are located on the same plane. The third light-combining module 40 is correspondingly disposed with the third light-emitting module 4 in a first direction U. The third light-combining module 40 is used to convert the light emitted by the third light-emitting module 4 from the first direction U to the second direction V for emission, and to allow the light emitted by the first light-emitting module 2 and the second light-emitting module 3 to pass through.

[0120] It is understood that the display device of this embodiment sets light-emitting modules that emit different colors of light on the same driving substrate 1, so that the light emitted by the light-emitting modules is already aligned on the surface along the second direction V. It is only necessary to adjust the angle and front-back distance of the first light-combining module 20 and the second light-combining module 30 to complete the combination of multiple colors of light. Compared with the light-combining structure of multiple independent display chips through prisms, the alignment difficulty of this embodiment is greatly improved, and the structure of the light-combining module is simpler, which has a wide range of application scenarios.

[0121] Taking Figure 18 as an example, this display device is not only used for three-color light combining, but the driving substrate 1 is not limited to three colors, nor is it limited to three light-emitting modules.

[0122] Specifically, the color combination on the driving substrate 1 can be as follows: the first light-emitting module 1, the second light-emitting module 2, and the third light-emitting module 3 all emit light of one color, such as red, green, or blue, to achieve monochromatic light enhancement; or, the first light-emitting module 1 emits red light, the second light-emitting module 2 emits green light, and the third light-emitting module 3 emits blue light to achieve full-color display of three-color combined light; or, the number of light-emitting modules is greater than three, with three light-emitting modules emitting red, green, and blue light respectively, and one light-emitting module emitting white light, to enhance the brightness of the three-color combined light; or, the number of light-emitting modules is greater than three, with two light-emitting modules emitting red light, one light-emitting module emitting green light, and one light-emitting module emitting blue light, with the additional red light-emitting module compensating for the weak red light emission.

[0123] In some embodiments, referring to Figures 18 and 19, the first light-combining module 20 has a first optical film 201 facing the first light-emitting module 2, and the orthogonal projection of the first optical film 201 along the first direction U on the driving substrate 1 covers the first light-emitting module 2; the second light-combining module 30 has a second optical film 301 facing the second light-emitting module 3, and the orthogonal projection of the second optical film 301 along the first direction U on the driving substrate 1 covers the second light-emitting module 3; the third light-combining module 40 has a third optical film 401 facing the third light-emitting module 4, and the orthogonal projection of the third optical film 401 along the first direction U on the driving substrate 1 covers the third light-emitting module 4.

[0124] In some embodiments, the first optical film 201, the second optical film 301, and the third optical film 401 may be polarizing beam splitters. A polarizing beam splitter is a composite film of multilayer metal or semiconductor materials, which achieves polarization and spectral separation of light by utilizing the interference effect of multilayer films.

[0125] In some embodiments, the first optical film 201 is inclined relative to the surface of the first light-emitting module 2, the second optical film 301 is inclined relative to the surface of the second light-emitting module 3, and the third optical film 401 is inclined relative to the surface of the third light-emitting module 4. The first light-emitting surface 201, the second optical film 301, and the third optical film 401 are arranged parallel to each other.

[0126] In some embodiments, the surfaces of the first light-combining module 20, the second light-combining module 30, and the third light-combining module 40 may also be made of a single-sided highly reflective transparent material, and the second light-combining module 30 and the third light-combining module 40 also need to be made of materials with high transmittance to facilitate the transmission of the first color light and the second color light. Specifically, the high transmittance material may include transparent glass, silicon nitride, etc.

[0127] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0128] The present application has been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only for the purpose of helping to understand the technical solutions and core ideas of the present application. Those skilled in the art should understand that they can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A miniature light-emitting diode display chip, comprising: A driving substrate, the driving substrate including multiple contacts; A first light-emitting module is disposed on the driving substrate. The first light-emitting module includes a plurality of first LED units arranged in an array, and the first LED units are individually driven through corresponding contacts. The second light-emitting module is disposed on the driving substrate and spaced apart from the first light-emitting module. The second light-emitting module and the first light-emitting module are located on the same plane. The second light-emitting module includes a plurality of second LED units arranged in an array. The second LED units are individually driven through corresponding contacts. In this configuration, all first LED units in the first light-emitting module emit light of the same color, all second LED units in the second light-emitting module emit light of the same color, and the color of the light emitted by the first LED unit is different from the color of the light emitted by the second LED unit.

2. The miniature light-emitting diode display chip according to claim 1, further comprising: The third light-emitting module is disposed on the driving substrate and is spaced apart from the second light-emitting module on the side away from the first light-emitting module; The third light-emitting module, the second light-emitting module, and the first light-emitting module are all located on the same plane. The third light-emitting module includes multiple third LED units arranged in an array. Each third LED unit is individually driven through a corresponding contact. All third LED units in the third light-emitting module emit light of the same color, and the color of the light emitted by the third LED unit is different from the color of the light emitted by at least one of the first LED unit and the second LED unit.

3. The micro LED display chip according to claim 2 further includes a bonding layer, the bonding layer being disposed on the driving substrate, and any one of the first LED unit, the second LED unit, and the third LED unit being electrically connected to the bonding layer.

4. The miniature light-emitting diode display chip according to claim 3, wherein, The first light-emitting module further includes a first passivation layer and a first electrode layer. The first passivation layer covers the side of the bonding layer and the side of the first LED unit. The first electrode layer covers the side of the first passivation layer away from the first LED unit. The first passivation layer electrically isolates the first electrode layer from either the first LED unit or the bonding layer. The first electrode layer is electrically connected to the corresponding contact and a portion of the top surface of the first LED unit, respectively. The second light-emitting module further includes a second passivation layer and a second electrode layer. The second passivation layer covers the side of the bonding layer and the side of the second LED unit. The second electrode layer covers the side of the second passivation layer away from the second LED unit. The second passivation layer electrically isolates the second electrode layer from either the second LED unit or the bonding layer. The second electrode layer is electrically connected to the corresponding contact and a portion of the top surface of the second LED unit, respectively. The third light-emitting module further includes a third passivation layer and a third electrode layer. The third passivation layer covers the side of the bonding layer and the side of the third LED unit. The third electrode layer covers the side of the third passivation layer away from the third LED unit. The third passivation layer electrically isolates the third electrode layer from either the third LED unit or the bonding layer. The third electrode layer is electrically connected to the corresponding contact and a portion of the top surface of the third LED unit.

5. The miniature light-emitting diode display chip according to claim 2, wherein, The driving substrate has a length direction, and the first light-emitting module, the second light-emitting module, and the third light-emitting module are arranged sequentially at intervals along the length direction. The first light-emitting module and the second light-emitting module have a minimum distance A along the length direction, and the second light-emitting module and the third light-emitting module have a minimum distance B along the length direction, satisfying: 0.1 micrometers ≤ A ≤ 10000 micrometers, and 0.1 micrometers ≤ B ≤ 10000 micrometers.

6. The micro light emitting diode display chip of claim 5, wherein, The driving substrate also has a width direction perpendicular to the length direction. In the first light-emitting module, a plurality of first LED units are respectively arranged at intervals along the length direction and the width direction, and adjacent first LED units have a minimum distance a1 along the length direction and a minimum distance a2 along the width direction; In the second light-emitting module, a plurality of second LED units are respectively arranged at intervals along the length direction and the width direction, and adjacent second LED units have a minimum distance b1 along the length direction and a minimum distance b2 along the width direction; In the third light-emitting module, a plurality of third LED units are respectively arranged at intervals along the length direction and the width direction, and adjacent third LED units have a minimum distance c1 along the length direction and a minimum distance c2 along the width direction; The micro LED display chip satisfies at least one of the following characteristics a) to f): a) 0.1 micrometers ≤ a1 ≤ 100 micrometers; b) 0.1 micrometers ≤ a2 ≤ 100 micrometers; c) 0.1 micrometers ≤ b1 ≤ 100 micrometers; d) 0.1 micrometers ≤ b2 ≤ 100 micrometers; e) 0.1 micrometers ≤ c1 ≤ 100 micrometers; f) 0.1 micrometers ≤ c2 ≤ 100 micrometers.

7. The micro light emitting diode display chip of claim 3, wherein, At least one of the first LED unit, the second LED unit, and the third LED unit has a stepped structure, wherein the stepped structure includes a first doped semiconductor layer, a second doped semiconductor layer, and an active layer located between the two. The stepped structure disconnects and electrically isolates adjacent second-doped semiconductor layers, active layers, and first-doped semiconductor layers from each other; the contact is electrically connected to the corresponding first-doped semiconductor layer.

8. The micro light emitting diode display chip of claim 2, wherein, The size of any one of the first LED unit, the second LED unit, and the third LED unit is 1 to 10 μm.

9. The micro light emitting diode display chip of claim 2, wherein, The driving substrate is a silicon-based CMOS driving board or a thin-film field-effect transistor driving board.

10. A method for fabricating a miniature light-emitting diode display chip, comprising: A driving substrate is provided, and the driving substrate is at least divided into a first light-emitting region and a second light-emitting region, the driving substrate including a plurality of contacts; A first epitaxial layer is formed on the first light-emitting region; A second epitaxial layer is formed on the second light-emitting region; A first light-emitting module is formed by processing a first epitaxial layer located in the first light-emitting region, wherein the first light-emitting module includes a plurality of first LED units arranged in an array, and the first LED units are individually driven by corresponding contacts; A second epitaxial layer located in the second light-emitting region is processed to form a second light-emitting module, wherein the second light-emitting module and the first light-emitting module are located on the same plane and are spaced apart; the second light-emitting module includes a plurality of second LED units arranged in an array, and the second LED units are individually driven through corresponding contacts; In this configuration, all first LED units in the first light-emitting module emit light of the same color, all second LED units in the second light-emitting module emit light of the same color, and the color of the light emitted by the first LED unit is different from the color of the light emitted by the second LED unit.

11. The method for fabricating a micro light-emitting diode display chip according to claim 10, wherein, The driving substrate is further divided into a third light-emitting region. After forming the second epitaxial layer on the second light-emitting region, the fabrication method further includes: A third epitaxial layer is formed on the third light-emitting region; A third epitaxial layer located in the third light-emitting region is processed to form a third light-emitting module, wherein the third light-emitting module is spaced apart from the second light-emitting module on the side away from the first light-emitting module, and is located on the same plane as both the second and first light-emitting modules; the third light-emitting module includes a plurality of third LED units arranged in an array, and each third LED unit is individually driven through a corresponding contact; In the third light-emitting module, all third LED units emit light of the same color, and the color of the light emitted by the third LED unit is different from the color of the light emitted by at least one of the first LED unit and the second LED unit.

12. The method for fabricating a micro light-emitting diode display chip according to claim 11, wherein, The step of forming the first epitaxial layer on the first light-emitting region includes: providing a first substrate and forming a first epitaxial layer on the first substrate; forming a bonding layer on the driving substrate and / or the first epitaxial layer, bonding the driving substrate and the first epitaxial layer through the bonding layer to form the first epitaxial layer on the first light-emitting region of the driving substrate, and removing the first substrate; etching away the first epitaxial layer located in the second light-emitting region and the third light-emitting region, and retaining the first epitaxial layer located in the first light-emitting region; The step of forming the second epitaxial layer on the second light-emitting region includes: providing a second substrate and forming the second epitaxial layer on the second substrate; forming a bonding layer on the second epitaxial layer; etching away the second epitaxial layer corresponding to the first light-emitting region and the third light-emitting region, while retaining the second epitaxial layer corresponding to the second light-emitting region; bonding the driving substrate and the second epitaxial layer through the bonding layer to form the second epitaxial layer on the second light-emitting region of the driving substrate, and removing the second substrate; The step of forming the third epitaxial layer on the third light-emitting region includes: providing a third substrate and forming a third epitaxial layer on the third substrate; forming a bonding layer on the third epitaxial layer; etching away the third epitaxial layer corresponding to the first light-emitting region and the second light-emitting region, while retaining the third epitaxial layer corresponding to the third light-emitting region; bonding the driving substrate and the third epitaxial layer through the bonding layer to form the third epitaxial layer on the third light-emitting region of the driving substrate, and removing the third substrate.

13. The method for fabricating a micro light-emitting diode display chip according to claim 12, wherein, The step of forming a first light-emitting module by processing a first epitaxial layer located in the first light-emitting region includes: The first epitaxial layer is etched to form a plurality of first LED units, and the first LED units are arranged in an array on the bonding layer; A first passivation layer is formed on the side of the first LED unit and on the side of the bonding layer; A first electrode layer is formed on the side of the first passivation layer away from the first LED unit, wherein the first electrode layer is electrically connected to the corresponding contact and a portion of the top surface of the first LED unit, and the first passivation layer electrically isolates the first electrode layer from either the first LED unit or the bonding layer.

14. The method for fabricating a micro light-emitting diode display chip according to claim 12, wherein, The step of forming a second light-emitting module by processing a second epitaxial layer located in the second light-emitting region includes: The second epitaxial layer is etched to form a plurality of second LED units, and the second LED units are arranged in an array on the bonding layer; A second passivation layer is formed on the side of the second LED unit and on the side of the bonding layer; A second electrode layer is formed on the side of the second passivation layer away from the second LED unit, wherein the second electrode layer is electrically connected to the corresponding contact and a portion of the top surface of the second LED unit, and the second passivation layer electrically isolates the second electrode layer from either the second LED unit or the bonding layer.

15. The method for fabricating a micro light-emitting diode display chip according to claim 12, wherein, The steps of forming a third light-emitting module by processing a third epitaxial layer located in the third light-emitting region include: The third epitaxial layer is etched to form a plurality of third LED units, and the third LED units are arranged in an array on the bonding layer; A third passivation layer is formed on the side of the third LED unit and on the side of the bonding layer; A third electrode layer is formed on the side of the third passivation layer away from the third LED unit, wherein the third electrode layer is electrically connected to the corresponding contact and a portion of the top surface of the third LED unit, and the third passivation layer electrically isolates the third electrode layer from either the third LED unit or the bonding layer.

16. A display device comprising a micro light-emitting diode display chip according to any one of claims 1 to 9, or comprising a micro light-emitting diode display chip prepared by the preparation method according to any one of claims 10 to 15.

17. The display device according to claim 16, wherein the light emission direction of the first light-emitting module and / or the second light-emitting module is a first direction, the direction in which the first light-emitting module and the second light-emitting module are spaced apart is a second direction, and the first direction intersects the second direction, wherein... The display device further includes: A first light combining module is provided, which is correspondingly arranged with the first light emitting module in the first direction. The first light combining module is used to convert the light emitted by the first light emitting module from the first direction to the second direction for emission. The second light combining module is arranged at a distance from the first light combining module in the second direction and located on the same plane. The second light combining module and the second light emitting module are arranged correspondingly in the first direction. The second light combining module is used to convert the light emitted by the second light emitting module from the first direction to the second direction for emission, and to allow the light emitted by the first light emitting module to pass through.

18. The display device according to claim 17, further comprising: The third light combining module is disposed along the second direction on the side of the second light combining module that is away from the first light combining module; The third light-combining module is located on the same plane as the first light-combining module and the second light-combining module. The third light-combining module and the third light-emitting module are correspondingly arranged in the first direction. The third light-combining module is used to convert the light emitted by the third light-emitting module from the first direction to the second direction for emission, and to allow the light emitted by the first light-emitting module and the second light-emitting module to pass through.

19. The display device according to claim 18, wherein, The first light-combining module has a first optical film facing the first light-emitting module, and the first optical film covers the first light-emitting module by an orthogonal projection on the driving substrate along the first direction; The second light combining module has a second optical film facing the second light-emitting module, and the orthogonal projection of the second optical film on the driving substrate along the first direction covers the second light-emitting module; The third light-combining module has a third optical film facing the third light-emitting module, and the orthogonal projection of the third optical film on the driving substrate along the first direction covers the third light-emitting module.

20. The display device according to claim 19, wherein, The first optical film is inclined relative to the surface of the first light-emitting module, the second optical film is inclined relative to the surface of the second light-emitting module, and the third optical film is inclined relative to the surface of the third light-emitting module. The first light-emitting surface, the second optical film, and the third optical film are arranged parallel to each other.

Images