In SITU defect mitigation in crystal growth
The in-situ etching process with an inverted temperature gradient and etching agents addresses defects in silicon carbide crystals, improving quality and yield by cleaning the surface and reducing graphitization.
WO2026117471A1PCT designated stage Publication Date: 2026-06-04WOLFSPEED INC
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- WOLFSPEED INC
- Filing Date
- 2025-11-21
- Publication Date
- 2026-06-04
AI Technical Summary
Technical Problem
Defects form in silicon carbide crystals during growth due to subsurface damage, scratches, surface contamination, and impurities from the silicon carbide vapor source material, compromising the quality and yield of the final product.
Method used
An in-situ etching process using an inverted temperature gradient and etching agents such as silicon vapor, metal vapors, or carbon getters to clean the crystalline surface, reducing graphitization and removing defective layers.
Benefits of technology
The process improves the quality and yield of silicon carbide crystalline material by preparing a pristine surface for growth, reducing defect propagation and enhancing the overall crystal quality.
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Smart Images
Figure US2025056612_04062026_PF_FP_ABST
Abstract
Systems and methods for defect mitigation in silicon carbide crystal growth systems are provided. In an aspect, an example method includes providing a crystalline material in a first zone of the crystal growth chamber. In some implementations, the example method includes providing a silicon carbide vapor source material in a second zone of the crystal growth chamber. The example method includes providing an etching agent in the crystal growth chamber. The example method includes controlling a temperature gradient in the crystal growth chamber such that a first temperature in the first zone is greater than a second temperature in the second zone to implement an etching process on the crystalline material in the crystal growth chamber.
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