Cleaning liquid, method for cleaning semiconductor substrate, method for manufacturing semiconductor device
A cleaning solution with controlled pH and fluorine content, using nonionic surfactants and reducing agents, effectively removes ceria particles post-CMP, addressing substrate dissolution and yield issues.
WO2026126781A1 Publication Date: 2026-06-18FUJIFILM CORP
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- FUJIFILM CORP
- Filing Date
- 2025-11-25
- Publication Date
- 2026-06-18
AI Technical Summary
⚠Technical Problem
Existing cleaning solutions are inadequate in removing ceria particles after chemical mechanical polishing (CMP) treatment on semiconductor substrates, and may dissolve the substrate, leading to yield and performance issues.
⚗Method used
A cleaning solution comprising a nonionic surfactant, a reducing agent with two or more hydroxyl groups, and at least one reducing agent selected from a disulfide bond or a thiol group and a carboxyl group, with specific pH and fluorine content controls, effectively removing ceria particles while preventing substrate dissolution.
🎯Benefits of technology
The solution achieves excellent ceria particle removal post-CMP treatment, maintaining substrate integrity and enhancing semiconductor device yield and performance.
✦ Generated by Eureka AI based on patent content.
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Abstract
The present invention addresses the problem of providing a cleaning liquid which exhibits excellent ceria particle removability after a CMP treatment using ceria particles, while suppressing dissolution of a substrate. A cleaning liquid according to the present invention is used for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, and contains a nonionic surfactant and at least one reducing agent selected from the group consisting of a reducing agent having two or more hydroxyl groups and a reducing agent containing a disulfide bond or a thiol group and a carboxyl group. The cleaning liquid has a pH of 1.8 to 6.0. The content of a fluorine-containing compound is less than 0.1 mass% with respect to the total mass of the cleaning liquid, and the content of the nonionic surfactant is 0.3–20 mass% with respect to the total mass of the cleaning liquid, or the mass ratio of the content of the nonionic surfactant to the content of the reducing agent is 1.00–100.00.
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