Novel silicon compounds, method of preparing the same, and method of depositing a silicon-containing thin films by using the same

Abstract

Described herein are novel silicon compounds, their preparation method, and method for depositing a silicon-containing thin film using the silicon compounds. More specifically, described herein is noble silicon compounds, represented by the following Formula 1: wherein R1 to R7, and n are defined herein. The silicon compounds are a liquid-state compound at room temperature and under atmospheric pressure and have good thermal stability and high volatility to form silicon-containing films having high purity and excellent physical and electrical property by various deposition methods such as ALD or PEALD.

Description

[0001] Foreignfiling text P24-236-SEC-WO01 20251210

[0002] 1

[0003] NOVEL SILICON COMPOUNDS, METHOD OF PREPARING THE SAME, AND METHOD OF DEPOSITING A SILICON-CONTAINING THIN FILMS BY USING THE SAME

[0004] 5 BACKGROUND OF THE INVENTION

[0005] Silicon-containing thin films are used as semiconductor substrates, diffusion masks, anti-oxidation films, and dielectric films in the semiconductor technologies such as microelectronic devices such as RAM (memory and logic chips), flat panel displays including thin film transistors (TFT), and solar energy.

[0006] Atomic layer deposition (ALD) or chemical vapor deposition (CVD) is widely used to prepare silicon-containing thin films. Atomic layer deposition (ALD) among the above is a method that sequentially supplies a silicon compound gas and a reactant gas necessary for film formation, and it has the advantage of being able to form a

[0007] 15 silicon-containing thin film with a uniform thickness even on a highly uneven surface. Thus, atomic layer deposition (ALD) is widely utilized.

[0008] The mechanisms of chemical vapor deposition (CVD) and atomic layer deposition (ALD) are different from each other. Silicon precursors used in the preparation of

[0009] 20 silicon-containing thin films are of various types depending on various process conditions and their physical and chemical properties.

[0010] In particular, in accordance with the high integration of semiconductor devices, silicon-containing thin films having various performances are required. As the aspect ratio increases with the high integration of semiconductor devices, there has been a problem in that the deposition of a silicon-containing thin film using a conventional precursor does not meet the required performance.

[0011] Representative precursors for forming a silicon-containing film include silanes,

[0012] 30 silane chlorides, amino silanes, alkoxy silanes, etc. WO 2015 / 105337 discloses novel trisilyl amine derivatives and a method for formation of silicon containing thin films, and WO 2015 / 190749 discloses novel amino-silyl amine compounds, (Me2NSiR3R4)N(SiHR1R2)2(R1-R4= C1-3 alkyl, C2.3alkenyl, C2.3alkynyl, C3.7cycloalkyl, Ce-12 aryl, etc.), and a method of a dielectric film containing Si-N bond. Foreignfiling text P24-236-SEC-WO01 20251210

[0013] 2

[0014] Despite these developments, it is difficult to achieve excellent step coverage and thickness control for highly integrated semiconductor devices with thin film deposition using conventional precursors. There is also a problem in that impurities

[0015] 5 are contained in the thin film.

[0016] Accordingly, there has been a demand for the development of various silicon precursor compounds tailored to specific physical and chemical properties, necessary for forming a high-quality silicon-containing film.

[0017] BRIEF SUMMARY OF THE INVENTION

[0018] Described herein are novel silicon compounds, their preparation method, and the use thereof in the formation of a silicon-containing thin film. More specifically, the present invention is to provide novel silicon compounds that can be used as a silicon

[0019] 15 insulating material between low dielectric layers with excellent mechanical, electrical, chemical, and thermal properties. The silicon compounds of the present invention are suitable for Atomic Layer Deposition (ALD), Plasma Enhanced Atomic Layer Deposition (PEALD), Chemical Vapor Deposition (CVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), or Furnace Chemical Vapor

[0020] 20 Deposition (FCVD) process. The present silicon compounds can be deposited at different temperatures to form a silicon containing film, preferably a silicon oxide (SiCh) film, a carbon-doped silicon oxide (SiCO) film, a silicon nitride (SiN) film, a carbon-doped silicon nitride (SiCN) film, a silicon oxynitride (SiON) film, a carbon- doped silicon oxynitride (SiCON) film, or a carbon-doped silicon nitride (SiCN) film.

[0021] The present invention provides a silicon compound represented by the following Formula 1:

[0022] [Formula 1]

[0023] 30 Foreignfiling text P24-236-SEC-WO01 20251210

[0024] 3 wherein

[0025] Ri is a linear or branched Ci to C10 alkyl group, a linear or branched C2 to C10 alkenyl group, or C3 to C10 cycloalkyl group;

[0026] 5

[0027] R2 to R? are each independently selected from the group consisting of hydrogen, halogen, a linear or branched Ci to C10 alkyl group, a linear or branched C2 to C10 alkenyl group, a linear or branched Ci to C10 alkoxy group, and a Ce to C12 aryl group; and n is 1 , 2, or 3.

[0028] The silicon compound of the present invention is a liquid compound at room temperature and atmospheric pressure and provides excellent volatility to easily

[0029] 15 form a high-purity thin film. According to the silicon compound of the present invention, both the Si-N ring structure and Si-(CH2)n-Si structure in the molecule induce high thermal stability and low activation energy, thereby providing excellent reactivity between the substrate surface and the precursor compound, and also, due to the high silicon content (silicon = 3Ea) in the molecule, the formation ratio of a

[0030] 20 silicon-containing thin film is expected to be high.

[0031] The present invention further provides a method for preparing a silicon compound represented by the following Formula 1. Specifically, the method comprises the step of: reacting a compound of the following Formula 2 with a silane compound of the following Formula 3 in the presence of an alkyl-lithium (Alkyl-Li) to prepare the silicon compound represented by the following Formula 1 :

[0032] [Formula 1]

[0033] 30

[0034] [Formula 2] Foreignfiling text P24-236-SEC-WO01 20251210

[0035] 4 3] R5H2-)-Si— R6N R7

[0036] In the Formulae 1 , 2, and 3,

[0037] Ri is a linear or branched Ci to Cw alkyl group, a linear or branched C2to Cw alkenyl group, or C3 to C10 cycloalkyl group;

[0038] 15

[0039] R2 to R? are each independently selected from the group consisting of hydrogen, halogen, a linear or branched Ci to Cw alkyl group, a linear or branched C2 to Cw alkenyl group, a linear or branched Ci to Cw alkoxy group, and a Ce to C12 aryl group;

[0040] 20

[0041] X is F, Cl, Br or I; and n is 1, 2, or 3.

[0042] The present invention further provides a method for depositing a silicon-containing film using a vapor deposition process. Specifically, the deposition method comprises the steps of a) providing a substrate in a reactor; b) introducing into the reactor at least one silicon precursor compound

[0043] 30 represented by Formula 1:

[0044] [Formula 1] Foreignfiling text P24-236-SEC-WO01 20251210

[0045] 5

[0046] 5 wherein

[0047] Ri is a linear or branched Ci to Cw alkyl group, a linear or branched C2 to Cw alkenyl group, or C3 to C10 cycloalkyl group;

[0048] R2 to R? are each independently selected from the group consisting of hydrogen, halogen, a linear or branched Ci to Cw alkyl group, a linear or branched C2 to Cw alkenyl group, a linear or branched Ci to Cw alkoxy group, and a Ce to C12 aryl group; and

[0049] 15 n is 1 , 2, or 3, c) purging the reactor with a purge gas; d) introducing an oxygen-containing source or a nitrogen-containing source into

[0050] 20 the reactor; and e) purging the reactor with a purge gas, wherein steps b through e are repeated until a desired thickness of the film is deposited.

[0051] The present invention further provides a semiconductor device comprising the silicon-containing thin film formed by the method for depositing the silicon compound represented by Formula 1 as described above.

[0052] The various aspect of the invention can be used alone or in combination with each

[0053] 30 other.

[0054] BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

[0055] Figure 1 shows the1H NMR spectrum of the silicon compound according to Example 1 . Foreignfiling text P24-236-SEC-WO01 20251210

[0056] 6

[0057] Figure 2 shows the1H NMR spectrum of the silicon compound according to Example 2.

[0058] Figure 3 shows the1H NMR spectrum of the silicon compound according to

[0059] 5 Example 3.

[0060] Figure 4 shows the TGA data of the silicon compounds according to Example 1 , Example 2, and Example 3.

[0061] Figure 5 shows the results obtained by the vapor pressure measurements of the silicon compounds according to Example 1, Example 2, Example 3 and Example 4.

[0062] Figure 6 is a graph of X-ray photoelectron spectroscopy (XPS) that shows the composition of the carbon-doped silicon oxynitride thin film deposited at 350°C from

[0063] 15 Example 1.

[0064] Figure 7 is a graph of X-ray photoelectron spectroscopy (XPS) that shows the composition of the carbon-doped silicon oxynitride thin film deposited at 300°C from Example 4.

[0065] 20

[0066] DETAILED DESCRIPTION OF THE INVENTION

[0067] All references, including publications, patent applications, and patents, cited herein are hereby incorporated by reference to the same extent as if each reference were individually and specifically indicated to be incorporated by reference and were set forth in its entirety herein.

[0068] The use of the terms "a" and "an" and "the" and similar referents in the context of describing the invention (especially in the context of the following claims) are to be construed to cover both the singular and the plural, unless otherwise indicated

[0069] 30 herein or clearly contradicted by context. The terms "comprising," "having," "including," and "containing" are to be construed as open-ended terms (i.e. , meaning "including, but not limited to,") unless otherwise noted. The term “about” is intended to cover ±5% of the number defined. Recitation of ranges of values herein are merely intended to serve as a shorthand method of referring individually to each separate value falling within the range, unless otherwise indicated herein, and each Foreignfiling text P24-236-SEC-WO01 20251210 separate value is incorporated into the specification as if it were individually recited herein. All methods described herein can be performed in any suitable order unless otherwise indicated herein or otherwise clearly contradicted by context. The use of any and all examples, or exemplary language (e.g., "such as") provided herein, is

[0070] 5 intended merely to better illuminate the invention and does not pose a limitation on the scope of the invention unless otherwise claimed. No language in the specification should be construed as indicating any non-claimed element as essential to the practice of the invention.

[0071] Preferred embodiments of this invention are described herein, including the best mode known to the inventors for carrying out the invention. Variations of those preferred embodiments may become apparent to those of ordinary skill in the art upon reading the foregoing description. The inventors expect skilled artisans to employ such variations as appropriate, and the inventors intend for the invention to

[0072] 15 be practiced otherwise than as specifically described herein. Accordingly, this invention includes all modifications and equivalents of the subject matter recited in the claims appended hereto as permitted by applicable law. Moreover, any combination of the above-described elements in all possible variations thereof is encompassed by the invention unless otherwise indicated herein or otherwise

[0073] 20 clearly contradicted by context.

[0074] The present invention can be practiced using equipment known in the art. For example, the inventive method can use a reactor that is conventional in the semiconductor manufacturing art.

[0075] In one aspect, the present invention provides a silicon compound represented by the following Formula 1:

[0076] [Formula 1]

[0077] 30 Foreignfiling text P24-236-SEC-WO01 20251210

[0078] 8 wherein

[0079] Ri is a linear or branched Ci to Cw alkyl group, a linear or branched C2 to Cw alkenyl group, or C3 to C10 cycloalkyl group;

[0080] 5

[0081] R2 to R? are each independently selected from the group consisting of hydrogen, halogen, a linear or branched Ci to Cw alkyl group, a linear or branched C2 to Cw alkenyl group, a linear or branched Ci to Cw alkoxy group, and a Ce to C12 aryl group; and n is 1 , 2, or 3.

[0082] In one embodiment of the silicon compound represented by Formula 1 , R1 is a linear or branched Ci to C5 alkyl group, a linear or branched C2 to C5 alkenyl group, or C3

[0083] 15 to C7 cycloalkyl group; R2 to R7 are each independently selected from the group consisting of hydrogen, halogen, a linear or branched Ci to C5 alkyl group, a linear or branched C2 to C5 alkenyl group, a linear or branched Ci to C5 alkoxy group, and a Ce to C12 aryl group; and n is 1 , 2, or 3.

[0084] 20 In another embodiment of the silicon compound represented by Formula 1 , R1 is a linear or branched C2 to C5 alkyl group, a linear or branched C2 to C3 alkenyl group, or C3 to Ce cycloalkyl group; R2 to R7 are each independently selected from the group consisting of hydrogen, halogen, a linear or branched Ci to C5 alkyl group, a linear or branched C2 to C5 alkenyl group, a linear or branched Ci to C5 alkoxy group, and a Ce to C12 aryl group; and n is 1 or 2.

[0085] Examples for a preferred substituent R1 is iso-propyl or tert-butyl, and particularly preferred R1 is iso-propyl. Examples for preferred substituents R2 to R7 are each independently selected from the group consisting of hydrogen, methyl, ethyl,

[0086] 30 methoxy, ethoxy, vinyl, and phenyl. Examples for a preferred index n is 1 or 2, and particularly preferred index n is 1 .

[0087] Particularly preferred embodiments of the silicon compound according to the present invention may be selected from the following compounds, but the present invention is not limited thereto: Foreignfiling text P24-236-SEC-WO01 20251210 (13) (14) (15) (16)

[0088] 30 Foreignfiling text P24-236-SEC-WO01 20251210

[0089] 10

[0090] 30 Foreignfiling text P24-236 SEC-WO01 20251210

[0091] 30 Foreignfiling_text_P24-236-SEC-W001_20251210 Foreignfiling text P24-236-SEC-WO01 20251210

[0092] (77) (78) (79) (80)

[0093] 30 Foreignfiling text P24-236-SEC-WO01 20251210

[0094] 30 Foreignfiling text P24-236-SEC-WO01 20251210

[0095] 30 Foreignfiling text P24-236-SEC-WO01 20251210

[0096] 30 Foreignfiling_text_P24-236-SEC-W001_20251210

[0097] 17 0 Foreignfiling_text_P24-236-SEC-WO01 20251210

[0098] 18 0 Foreignfiling_text_P24-236-SEC-W001_20251210

[0099] 30 Foreignfiling text P24-236-SEC-WO01 20251210

[0100] 20

[0101] 30 Foreignfiling_text_P24-236-SEC-W001_20251210

[0102] (203) (204) (205) (206)

[0103] 30 Foreignfiling text P24-236-SEC-WO01 20251210

[0104] 22

[0105] The silicon compounds of the present invention can be synthesized by the method comprising reacting the compound of the following Formula 2 with a silane compound of the following Formula 3 in the presence of an alkyl-lithium (Alkyl- Li) to prepare the silicon compound represented by the following Formula 1:

[0106] 20

[0107] [Formula 1]

[0108] [Formula 3] Foreignfiling text P24-236-SEC-WO01 20251210

[0109] 23

[0110] 5 In the Formulae 1 , 2, and 3,

[0111] R1 is a linear or branched Ci to C10 alkyl group, a linear or branched C2 to C10 alkenyl group, or C3 to C10 cycloalkyl group;

[0112] R2 to R? are each independently selected from the group consisting of hydrogen, halogen, a linear or branched Ci to C10 alkyl group, a linear or branched C2 to C10 alkenyl group, a linear or branched Ci to C10 alkoxy group, and a Ce to C12 aryl group;

[0113] 15 X is F, Cl, Br or I; and n is 1 , 2, or 3.

[0114] The term “alkyl-lithium” is well known in the art and is easy to obtain commercially.

[0115] 20 In certain embodiment, the alkyl-lithium (Alkyl-Li) is (C1-C5) alkyl lithium but is not limited thereto. In a preferred embodiment, the alkyl-lithium (Alkyl-Li) is preferably n- BuLi or t-BuLi.

[0116] The reaction above can be conducted in the presence of organic solvents. The examples of suitable organic solvents include, but are not limited to, hydrocarbon such as pentane, hexane, octane, toluene, and ethers such as diethyl ether and tetra hydrofuran (THF). The compounds of Formula 2 and 3 are commercially available or can be synthesized according to the method disclosed in the art. One exemplary embodiment, the compounds of represented by Formula 2 above can be

[0117] 30 synthesized according to the method disclosed in the art, for example, by reacting the compound represented by Formula 4 with a primary amine represented by Formula 5:

[0118] [Formula 4] Foreignfiling text P24-236-SEC-WO01 20251210

[0119] 24

[0120] 5 [Formula 5]

[0121] R1-NH2

[0122] In the Formulae 4 and 5,

[0123] R1 is a linear or branched Ci to C10 alkyl group, a linear or branched C2to C10 alkenyl group, or C3 to C10 cycloalkyl group;

[0124] R2 and R3 are each independently selected from the group consisting of hydrogen, halogen, a linear or branched Ci to C10 alkyl group, a linear or

[0125] 15 branched C2 to C10 alkenyl group, a linear or branched Ci to C10 alkoxy group, and a Ce to C12 aryl group; and

[0126] X is F, Cl, Br or I.

[0127] 20 In a preferred embodiment of the invention, X is Cl or Br. In the most preferred embodiment of the invention, X is Cl.

[0128] A reaction temperature and time are not limited if a temperature is used for general organic synthesis; however, may be varied depending on an amount of the reaction material, and the starting material, wherein the reaction needs to be finished after confirming that the starting material is completely consumed by NMR, GC, and the like. When the reaction is finished, the solvent may be removed by filtration, followed by simple distillation under reduced pressure, and then a desired material may be separated and purified by general methods such as fractional distillation,

[0129] 30 distillation under reduced pressure, and the like.

[0130] In a particular embodiment, the compound of Formula 2 is added into organic solvents in anhydrous and inert atmosphere. After colling to the temperature in the range of from about -30°C to about -20°C, particularly in low temperature of about - 20°C, an alkyl-lithium is slowly added thereto. After the addition is completed, a Foreignfiling text P24-236-SEC-WO01 20251210 temperature of the reaction solution is slowly raised to room temperature and may be stirred for at least two (2) hours, preferably four (4) hours. After the reaction solution is cooled to the temperature in the range of from about -30°C to about - 20°C, particularly in low temperature of about -20°C, the compound of Formula 3 is

[0131] 5 added. The reaction temperature is slowly raised to a room temperature. The resulting reactant mixture may be stirred for at least 8 hours. The resulting silicon compound can be purified, for example, via vacuum distillation after removing all byproducts as well as any solvent(s).

[0132] In certain embodiment, when at least one of R2 to R? of Formula 1 is / are halogen, the step of reacting the silicon compound represented by Formula 1 with a metal hydride (MH) may be further conducted. The metal hydride of the present invention may include lithium hydride (LiH), sodium hybride (NaH), lithium boron hydride (IJBH4), lithium aluminum hydride (UAIH4), sodium aluminum hydride (NaAIH4) and

[0133] 15 sodium boron hydride (NaBH4), but is not limited thereto. In a particular embodiment, LiH as MH is used in presence of polar solvents such as tetra hydrofuran (THF).

[0134] The present invention further provides a method for depositing a silicon-containing

[0135] 20 film using a vapor deposition process, the method comprising the steps of: a) providing a substrate in a reactor; b) introducing into the reactor at least one silicon precursor compound represented by Formula 1 :

[0136] [Formula 1] wherein Foreignfiling text P24-236-SEC-WO01 20251210

[0137] 26

[0138] Ri is a linear or branched Ci to Cw alkyl group, a linear or branched C2 to Cw alkenyl group, or C3 to C10 cycloalkyl group;

[0139] R2 to R? are each independently selected from the group consisting of

[0140] 5 hydrogen, halogen, a linear or branched Ci to C alkyl group, a linear or branched C2 to Cw alkenyl group, a linear or branched Ci to Cw alkoxy group, and a Ce to C12 aryl group; and n is 1 , 2, or 3, c) purging the reactor with a purge gas; d) introducing an oxygen-containing source or a nitrogen-containing source into the reactor; and

[0141] 15 e) purging the reactor with a purge gas, wherein steps b through e are repeated until a desired thickness of the film is deposited.

[0142] 20 In the certain embodiment of the silicon precursor compound represented by Formula 1 in the deposition method, R1 is a linear or branched Ci to C5 alkyl group, a linear or branched C2 to C5 alkenyl group, or C3 to C7 cycloalkyl group; R2 to R7 are each independently selected from the group consisting of hydrogen, halogen, a linear or branched Ci to C5 alkyl group, a linear or branched C2 to C5 alkenyl group, a linear or branched Ci to C5 alkoxy group, and a Ce to C12 aryl group; and n is 1 , 2, or 3.

[0143] In a preferred embodiment of the silicon precursor compound represented by Formula 1 in the deposition method, R1 a linear or branched C2 to C5 alkyl group, a

[0144] 30 linear or branched C2 to C3 alkenyl group or C3 to Ce cycloalkyl group; R2 to R7 are each independently selected from the group consisting of hydrogen, halogen, a linear or branched Ci to C5 alkyl group, a linear or branched C2 to C5 alkenyl group, a linear or branched Ci to C5 alkoxy group, and a Ce to C12 aryl group. Foreignfiling text P24-236-SEC-WO01 20251210

[0145] 27

[0146] Examples for a preferred substituent Ri is iso-propyl or tert-butyl, and particularly preferred is iso-propyl. Examples for preferred substituents R2 to R? are each independently selected from the group consisting of hydrogen, methyl, ethyl, methoxy, ethoxy, vinyl, and phenyl. Examples for a preferred index n is 1 or 2, and

[0147] 5 particularly preferred index n is 1 .

[0148] In a particular preferred embodiment of the deposition method, the silicon compounds (1) to (216) as described above can be used, but the silicon compound is not limited thereto.

[0149] In the certain embodiment of the deposition method, the vapor deposition process comprises Atomic Layer Deposition (ALD), Plasma Enhanced Atomic Layer Deposition (PEALD), Chemical Vapor Deposition (CVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), or Furnace Chemical Vapor Deposition

[0150] 15 (FCVD) process. In the preferred embodiment of the deposition method, ALD or PEALD is used. In the most preferred embodiment of the deposition method, PEALD is used.

[0151] In one embodiment of the deposition method, the silicon containing film may be the

[0152] 20 silicon containing film may be a silicon oxide (SiC>2) film, a carbon-doped silicon oxide (SiCO) film, a silicon nitride (SiN) film, a carbon-doped silicon nitride (SiCN) film, a silicon oxynitride (SiON) film, or a carbon-doped silicon oxynitride (SiCON) film.

[0153] In certain embodiments, the silicon-containing films are a silicon oxide (SiC>2) film, a carbon-doped silicon oxide (SiCO) film, a silicon oxynitride (SiON) film, or a carbon- doped silicon oxynitride (SiCON) film. In these embodiments, the silicon-containing films deposited using the methods described herein are formed in the presence of oxygen using an oxygen-containing source, reagent or precursor comprising

[0154] 30 oxygen. An oxygen-containing source may be introduced into the reactor in the form of at least one oxygen-containing source and / or may be present incidentally in the other precursors used in the deposition process. Suitable oxygen-containing source may include, for example, water (H2O) (e.g., deionized water, purifier water, and / or distilled water), peroxide, oxygen (O2), hydrogen peroxide, oxygen plasma, ozone (O3), N2O plasma, NO2 plasma, carbon monoxide (CO) plasma, carbon Foreignfiling text P24-236-SEC-WO01 20251210

[0155] 28 dioxide (CO2) plasma and combinations thereof. In preferred embodiments, the oxygen-containing source is selected from the group consisting of oxygen, peroxide, oxygen plasma, water vapor, water vapor plasma, hydrogen peroxide, ozone source, and mixtures thereof. In certain embodiments, the oxygen-containing

[0156] 5 source comprises an oxygen source gas that is introduced into the reactor at a flow rate ranging from about 1 to about 2000 standard cubic centimeters (seem) or from about 1 to about 1000 seem. The oxygen-containing source can be introduced for a time that ranges from about 0.1 to about 100 seconds. In one particular embodiment, the oxygen-containing source comprises water having a temperature of 10°C or lower. In embodiments wherein the film is deposited by an ALD or a cyclic CVD process, the precursor pulse can have a pulse duration that is greater than 0.01 seconds, and the oxygen-containing source can have a pulse duration that is less than 0.01 seconds, while the water pulse duration can have a pulse duration that is less than 0.01 seconds. In yet another embodiment, the purge

[0157] 15 duration between the pulses that can be as low as 0 seconds or is continuously pulsed without a purge in-between. The oxygen-containing source or reagent is provided in a molecular amount less than a 1 :1 ratio to the silicon precursor, so that at least some carbon is retained in the as deposited dielectric film.

[0158] 20 In certain embodiment, the silicon-containing film is a silicon nitride (SiN) film or a carbon-doped silicon nitride (SiCN) film. In this embodiment, the film is deposited using the methods described herein and formed in the presence of a nitrogencontaining source. A nitrogen-containing source may be introduced into the reactor in the form of at least one nitrogen source and / or may be present incidentally in the other precursors used in the deposition process. Suitable nitrogen-containing source may include, for example, ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen / hydrogen, ammonia plasma, nitrogen plasma, nitrogen / hydrogen plasma, and mixture thereof. In certain embodiments, the nitrogen-containing source comprises an ammonia plasma or hydrogen / nitrogen

[0159] 30 plasma source gas that is introduced into the reactor at a flow rate ranging from about 1 to about 2000 square cubic centimeters (seem) or from about 1 to about 1000 seem. The nitrogen-containing source can be introduced for a time that ranges from about 0.1 to about 100 seconds. In embodiments wherein the film is deposited by an ALD or a cyclic CVD process, the precursor pulse can have a pulse duration that is greater than 0.01 seconds, and the nitrogen-containing source can Foreignfiling text P24-236-SEC-WO01 20251210

[0160] 29 have a pulse duration that is less than 0.01 seconds, while the water pulse duration can have a pulse duration that is less than 0.01 seconds. In yet another embodiment, the purge duration between the pulses that can be as low as 0 seconds or is continuously pulsed without a purge in-between.

[0161] 5

[0162] In one particular embodiment, the silicon-containing film is a carbon-doped silicon oxynitride (SiCON) film and the film is deposited using the methods described herein and formed in the presence of a nitrogen-containing source, preferably, N2 plasma.

[0163] The deposition methods disclosed herein may involve one or more purge gases. The purge gas, which is used to purge away unconsumed reactants and / or reaction byproducts, is an inert gas that does not react with the precursors. Exemplary purge gases include, but are not limited to, argon (Ar), nitrogen (N2), helium (He), neon (Ne), hydrogen (H2), and mixtures thereof. In certain embodiments, a purge

[0164] 15 gas such as Ar is supplied into the reactor at a flow rate ranging from about 10 to about 2000 seem for about 0.1 to 1000 seconds, thereby purging the unreacted material and any byproduct that may remain in the reactor.

[0165] The respective step of supplying the precursors, the oxygen-containing source, the

[0166] 20 nitrogen-containing source, and / or other precursors, source gases, and / or reagents may be performed by changing the time for supplying them to change the stoichiometric composition of the resulting dielectric film.

[0167] Energy is applied to the at least one of the silicon precursor, an oxygen-containing source or a nitrogen-containing source, or combination thereof to induce reaction and to form the dielectric film or coating on the substrate. Such energy can be provided by, but not limited to, thermal, plasma, pulsed plasma, helicon plasma, high density plasma, inductively coupled plasma, X-ray, e-beam, photon, remote plasma methods, and combinations thereof. In certain embodiments, a secondary

[0168] 30 RF frequency source can be used to modify the plasma characteristics at the substrate surface. In embodiments wherein the deposition involves plasma, the plasma-generated process may comprise a direct plasma-generated process in which plasma is directly generated in the reactor, or alternatively a remote plasmagenerated process in which plasma is generated outside of the reactor and supplied into the reactor. Foreignfiling text P24-236-SEC-WO01 20251210

[0169] 30

[0170] In a certain embodiment, the method of the present invention is conducted by using an oxygen-containing source which comprises a plasma wherein the plasma can further comprise an inert gas such as one or more of the following: an oxygen

[0171] 5 plasma with or without inert gas, a water vapor plasma with or without inert gas, a nitrogen oxide (e.g., N2O, NO, NO2) plasma with or without inert gas, a carbon oxide (e.g., CO2, CO) plasma with or without inert gas, and combinations thereof.

[0172] The oxygen-containing source can be generated in situ or, alternatively, remotely. In one particular embodiment, the oxygen-containing source comprises oxygen and is flowing, or introduced during method steps b through d, along with other reagents such as without limitation, the at least one silicon precursor and optionally an inert gas.

[0173] 15 In one embodiment, the oxygen-containing source is a source selected from the group consisting of an oxygen (O2), peroxide, an oxygen plasma, ozone, a water vapor, water vapor plasma, hydrogen peroxide, nitrogen oxide (e.g., N2O, NO, NO2) plasma with or without inert gas, a carbon oxide (e.g., CO2, CO) plasma and combinations thereof. In certain embodiments, the oxygen source further comprises

[0174] 20 an inert gas. In these embodiments, the inert gas is selected from the group consisting of argon, helium, nitrogen, hydrogen, and combinations thereof. In an alternative embodiment, the oxygen source does not comprise an inert gas. In yet another embodiment, the oxygen-containing source comprises nitrogen which reacts with the reagents under plasma conditions to provide a silicon oxynitride film.

[0175] In another embodiments, the oxygen-containing plasma source is selected from the group consisting of oxygen plasma with or without inert gas, water vapor plasma with or without inert gas, nitrogen oxides (N2O, NO, NO2) plasma with or without inert gas, carbon oxides (CO2, CO) plasma with or without inert gas, and

[0176] 30 combinations thereof. In certain embodiments, the oxygen-containing plasma source further comprises an inert gas. In these embodiments, the inert gas is selected from the group consisting of argon, helium, nitrogen, hydrogen, or combinations thereof. In an alternative embodiment, the oxygen-containing plasma source does not comprise an inert gas. Foreignfiling text P24-236-SEC-WO01 20251210

[0177] 31

[0178] The deposition methods described herein may involve one or more purge gases. The purge gas, which is used to purge away unconsumed reactants and / or reaction byproducts, is an inert gas that does not react with the precursors. Exemplary purge gases include, but are not limited to, argon (Ar), nitrogen (N2), helium (He), neon

[0179] 5 (Ne), hydrogen (H2), and mixtures thereof. In certain embodiments, the inert gas that is used as a purge gas comprises a noble gas. The term "noble gas" as used herein means those gases found in Group 18 of the Periodic Table and include, helium (He), neon (Ne), argon (Ar), Xenon (Xe), krypton (Kr), and mixtures thereof. In one particular embodiment, the noble gas used as a purge gas comprises argon. A purge gas such as argon purges away unabsorbed excess complex from the process chamber. After sufficient purging, an oxygen-containing source may be introduced into reaction chamber to react with the absorbed surface followed by another gas purge to remove reaction by-products from the chamber. The process cycle can be repeated to achieve the desired film thickness. In some cases,

[0180] 15 pumping can replace a purge with inert gas or both can be employed to remove unreacted silicon precursors.

[0181] The respective step of supplying the silicon precursor compounds, oxygencontaining source or nitrogen-containing source, purge gases, and / or reagents may

[0182] 20 be performed by changing the time for supplying them to change the stoichiometric composition of the resulting film.

[0183] In this or other embodiments, it is understood that the steps of the methods described herein may be performed in a variety of orders, may be performed sequentially, may be performed concurrently (e.g., during at least a portion of another step), and any combination thereof. The respective step of supplying the precursors and oxygen-containing source or nitrogen-containing source may be performed by varying the duration of the time for supplying them to change the stoichiometric composition of the resulting dielectric film.

[0184] 30

[0185] The deposition methods described herein may use various commercial ALD reactors such as single wafer, semi-batch, batch furnace or roll to roll reactor, which can be employed for depositing the silicon oxide or carbon doped silicon oxide or silicon nitride or carbon doped silicon nitride, etc. Foreignfiling text P24-236-SEC-WO01 20251210

[0186] 32

[0187] In a particular embodiment, the process temperatures for the method described herein use one or more of the following temperatures as endpoints: 200, 250, 300, 350, 400, 450, 500, 550 and 600°C. Exemplary temperature ranges include, but are not limited to the following: from about 100°C to about 600°C; or from about 200°C

[0188] 5 to about 500°C.

[0189] The present invention further provides a semiconductor device comprising the silicon-containing thin film formed by the method for depositing the silicon compound represented by Formula 1 as described above. In preferred embodiment, the semiconductor device may include, but are not limited to, computer chips, optical devices, magnetic information storages, coatings on a supporting material or substrate, microelectromechanical systems (MEMS), nanoelectromechanical systems, thin film transistor (TFT), light emitting diodes (LED), organic light emitting diodes (OLED), IGZO, and liquid crystal displays (LCD). Potential use of resulting

[0190] 15 silicon-containing film includes, but not limited to, a silicon insulating material between low dielectric layers.

[0191] The following examples illustrate the present invention and are not intended to limit it in any way.

[0192] 20

[0193] WORKING EXAMPLES

[0194] EXAMPLE 1 : Synthesis of diisopropyl-dimethyl-((trimethylsilyl)methyl)- diazadisiletidine

[0195] 20.0 g (0.11 mol) of diisopropyldimethylsilanediamine and 49 g of n-hexane (0.57 mol) were added to a 1 L flask in anhydrous and inert atmosphere. After cooling to - 20°C, 70.0 g of n-BuLi (23%, 0.25 mol) was slowly added thereto. After the addition was completed, a temperature of the reaction solution was slowly raised to room temperature and was stirred for 4 hours. After the reaction solution was cooled to - 20°C, 21.5 g (0.11 mol) of dichlorosilylmethyltrimethylsilane was slowly added

[0196] 30 thereto. After the addition was completed, a temperature of the reaction solution was slowly raised to room temperature and was stirred for 8 hours. After the stirring was completed, LiCI was removed through filtration, and then, the solvent was removed under reduced pressure. The residue was distilled to obtain 26.5 g (0.09 mol) of diisopropyl-dimethyl-((trimethylsilyl)methyl)-diazadisiletidine (Yield: 80%). Foreignfiling text P24-236-SEC-WO01 20251210

[0197] 33

[0198] Fig. 1 shows a hydrogen nuclear magnetic resonance (1H-NMR) spectrum of the silicon compound according to Example 1. From Fig. 1 , it can be seen that the silicon compound according to Example 1 was diisopropyl-dimethyl- ((trimethylsilyl)methyl)-diazadisiletidine.

[0199] 5

[0200] 1H-NMR(C6D6): 5 0.08(d, 2H(-SiCH2Si-), 0.17(s, 9H(-CH2Si(CH3)3), 0.33(s, 6H(2fCH39HSi[NCH(CH3)2]2), 1.10(t, 12H(2(CH3)Si[NCHfCH3;2]2), 3.26(m, 2H(2(CH3)Si[NCH(CH3)2]2), 5.61 (t, 1 H(2(CH3)HSi[NCH(CH3)2]2); Boiling Point 225 C.

[0201] EXAMPLE 2: Synthesis of di-tert-butyl-dimethyl-((trimethylsilyl)methyl)- diazadisiletidine

[0202] 20.0 g (0.11 mol) of di-tert-butyl-dimethylsilanediamine and 43 g of n-hexane (0.49 mol) were added to a 1 L flask in anhydrous and inert atmosphere. After cooling to - 20°C, 55.0 g of n-BuLi (23%, 0.20 mol) was slowly added thereto. After the addition

[0203] 15 was completed, a temperature of the reaction solution was slowly raised to room temperature and was stirred for 4 hours. After the reaction solution was cooled to - 20°C, 18.5 g (0.10 mol) of dichlorosilylmethyltrimethylsilane was slowly added thereto. After the addition was completed, a temperature of the reaction solution was slowly raised to room temperature and was stirred for 8 hours. After the stirring was

[0204] 20 completed, LiCI was removed through filtration, and then, the solvent was removed under reduced pressure. The residue was distilled to obtain 25.3 g (0.08 mol) of di- tert-butyl-dimethyl-((trimethylsilyl)methyl)-diazadisiletidine (Yield: 80%).

[0205] Fig. 2 shows a hydrogen nuclear magnetic resonance (1H-NMR) spectrum of the silicon compound according to Example 2. From Fig. 2, it can be seen that the silicon compound according to Example 2 was di-tert-butyl-dimethyl- ((trimethylsilyl)methyl)-diazadisiletidine.

[0206] 1H-NMR(C6D6): 5 0.20(s, 9H(-CH2SifCH3J3), 0.22(s, 2H(-SiCH2Si-), 0.38(d,

[0207] 30 6H«CH392Si[N(CH3)3]2SiHCH2-), 1.19(s, 18H(2(CH3)Si[NfCH3;3]2), 5.68(s, 1 H((CH3)2Si[N(CH3)3]2SiHCH2-)); Boiling Point 242°C.

[0208] EXAMPLE 3: Synthesis of diisopropyl-trimethyl-(trimethylsilyl)propyl)- diazadisiletidine Foreignfiling text P24-236-SEC-WO01 20251210

[0209] 34

[0210] 20.0 g (0.11 mol) of diisopropyl-dimethylsilanediamine and 49 g of n-hexane (0.57 mol) were added to a 1 L flask in anhydrous and inert atmosphere. After cooling to - 20°C, 70.0 g of n-BuLi (23%, 0.25 mol) was slowly added thereto. After the addition was completed, a temperature of the reaction solution was slowly raised to room

[0211] 5 temperature and was stirred for 4 hours. After the reaction solution was cooled to - 20°C, 26.3 g (0.11 mol) of dichloromethyl(trimethylsilyl)propyl)silane was slowly added thereto. After the addition was completed, a temperature of the reaction solution was slowly raised to room temperature and was stirred for 8 hours. After the stirring was completed, LiCI was removed through filtration, and then, the solvent was removed under reduced pressure. The residue was distilled to obtain 33.8 g (0.10 mol) of diisopropyl-trimethyl-(trimethylsilyl)propyl)-diazadisiletidine (Yield: 89%).

[0212] Fig. 3 shows a hydrogen nuclear magnetic resonance (1H-NMR) spectrum of the

[0213] 15 silicon compound according to Example 3. From Fig. 3, it can be seen that the silicon compound according to Example 3 was diisopropyl-trimethyl- (trimethylsilyl)propyl)-diazadisiletidine.

[0214] 1H-NMR(C6D6): 5 0.06(s, 9H(-CH2Si(CH3.)3), 0.29(s,

[0215] 20 3H((CH3)2Si((NCH(CH3)2)2SiCH3CH2-), 0.31 (d, 6H(fCH3)2Si((NCH(CH)3)2SiC / 73CH2-), 0.65(m, 2H((C / 73)2Si((NCH(CH)3)2SiC / 73CH2-)), 0.08(m, 2H(-CH2Si(CH3)3), 1.06(d, 12H((CH3)2Si((NCHfCH3J2)2SiCH3CH2-), 1.60(m, 2H(-CH2CH2Si(CH3)3), 3.22(m, 2H((CH3)2Si((NCH(CH3)2)2SiCH3CH2-); Boiling Point 254°C.

[0216] EXAMPLE 4: Synthesis of diisopropyl-methoxy-methyl- ((trimethylsilyl)methyl)-diazadisiletidine

[0217] 50.5 g (0.26 mol) of diisopropyl-methoxy-methylsilanediamine and 113 g of n- hexane (1.31 mol) were added to a 1 L flask in anhydrous and inert atmosphere.

[0218] 30 After cooling to -20°C, 150 g of n-BuLi (23%, 0.54 mol) was slowly added thereto. After the addition was completed, a temperature of the reaction solution was slowly raised to room temperature and was stirred for 4 hours. After the reaction solution was cooled to -20°C, 49.2 g (0.26 mol) of dichloromethyl(trimethylsilyl)propyl)silane was slowly added thereto. After the addition was completed, a temperature of the reaction solution was slowly raised to room temperature and was stirred for 8 hours. Foreignfiling text P24-236-SEC-WO01 20251210

[0219] 35

[0220] After the stirring was completed, LiCI was removed through filtration, and then, the solvent was removed under reduced pressure. The residue was distilled to obtain 68 g (0.22 mol) of diisopropyl-methoxy-methyl-((trimethylsilyl)methyl)-diazadisiletidine (Yield: 85%).

[0221] 5

[0222] 1H-NMR(C6D6): 5 0.05(s, 2H(-SiCH2Si-), 0.14(s, 9H(-CH2Si(CH3.)3), 0.40(s, 3H(CH3OCH3SiCH2-), 1.14(t, 12H(-Si[NCH(CH3;2]2), 3.27(m, 2H(-Si[NCH(CH3)2]2), 3.49(s, 3H(CH3OCH3SiCH2-), 5.50(t, 1 H(-HSi[NCH(CH3)2]2)

[0223] EXAMPLE 5: Measurement of TGA

[0224] Thermogravimetric analysis (TGA, Linseis STA PT 1600) was performed to analyze the basic thermal properties of the silicon precursor compounds according to Example 1 , Example 2, and Example 3. The results are shown in FIG. 4. From Fig.

[0225] 15 4, it can be seen that the silicon precursor compounds of Examples 1 , 2, and 3 did not exhibit any thermal deposition temperature, showing only a residue of 2 % or less, which confirmed that they had good thermal stability. It was also confirmed that they can form silicon-containing thin films in a wide range of temperature. Fig. 4 means that the silicon precursor compounds according to Examples 1 , 2, and 3 all

[0226] 20 have good volatility sufficient to be applied to ALD or PEALD.

[0227] EXAMPLE 6: Measurement of Vapor Pressure

[0228] The vapor pressure of the silicon precursor compounds according to Examples 1 , 2, 3, and 4 was measured to determine whether it had a vapor pressure suitable for producing a silicon-containing thin film through a deposition method, and the results are shown in FIG. 5. From Fig. 5, it can be seen that all silicon precursor compounds of Example 1 , Example 2, Example 3 and Example 4 had a high vapor pressure of at least 1 torr at about 80°C. These vapor pressure results showed that the silicon precursor compounds according to Examples 1 , 2, 3, and 4 exhibit a high

[0229] 30 vapor pressure sufficient to be applied to ALD or PEALD.

[0230] EXAMPLE 7: Deposition of Carbon-doped silicon oxynitride (SiCON) film Here, a carbon doped silicon oxynitride film, SiCON, is prepared and described as an example, but it is not limited thereto. Foreignfiling text P24-236-SEC-WO01 20251210

[0231] 36

[0232] An experiment was carried out to form a silicon oxide thin film on a silicon substrate by using the silicon compound of Example 1 and Example 4 as a precursor and using plasma enhanced atomic layer deposition (PEALD). An PEALD reactor in which a precursor and a reaction gas are separately supplied in a vertical direction 5 using a double shower head was used.

[0233] A. Formation of SiCON film from Example 1

[0234] Table 1 shows the specific conditions for SiCON film deposition.

[0235] [Table 1] 15

[0236] Table 2 below shows the results of analyzing the characteristics of the deposited SiCON film.

[0237] 20

[0238] [Table 2]

[0239] The thin film deposited at 350°C was analyzed for the composition of the thin film by

[0240] 30 using X-ray photoelectron spectroscopy (XPS). The results are shown in Fig. 6. As shown in Fig. 6, the thin film deposited using the silicon precursor compound prepared according to Example 1 was a SiCON film.

[0241] B. Formation of SiCON film from Example 4

[0242] Table 3shows the specific conditions for SiCON film deposition. Foreignfiling text P24-236-SEC-WO01 20251210

[0243] 37

[0244] [Table 3]

[0245] 5

[0246] Table 4 below shows the results of analyzing the characteristics of the deposited SiCON film.

[0247] [Table 4]

[0248] 15

[0249] 20

[0250] The thin film deposited at 300°C was analyzed for the composition of the thin film by using X-ray photoelectron spectroscopy (XPS). The results are shown in Fig. 7.

[0251] As shown in Fig. 7, the thin film deposited using the silicon precursor compound prepared according to Example 4 was a SiCON film.

[0252] From the deposition results, we expect that the compound containing three silicon atoms presented in the present invention can form a SiCON thin film with a higher deposition rate than the compound containing one or two silicon atoms in general, and we can also expect that the same tendency will be shown in the formation of

[0253] 30 SiCO or SiO2 thin films.

[0254] The above-described embodiments are only for the purpose of describing the preferred embodiments of the present invention. The scope of the present invention is not limited to the described embodiments. Various changes, modifications, or substitutions will be possible by those skilled in the art within the technical idea and Foreignfiling text P24-236-SEC-WO01 20251210

[0255] 38 claims of the present invention. It should be understood that such embodiments fall within the scope of the present invention.

[0256] 5

[0257] 15

[0258] 20

[0259] 30

Claims

Foreignfiling text P24-236-SEC-WO01 2025121039CLAIMS1. A silicon compound represented by the following Formula 1 :5 [Formula 1]whereinRi is a linear or branched Ci to Cw alkyl group, a linear or branched C2to Cw15 alkenyl group, or C3 to C10 cycloalkyl group;R2 to R? are each independently selected from the group consisting of hydrogen, halogen, a linear or branched Ci to Cw alkyl group, a linear or branched C2 to Cw alkenyl group, a linear or branched Ci to Cw alkoxy group, and a Ce to C12 aryl20 group; and n is 1 , 2, or 3.

2. The silicon compound of Claim 1 , wherein R1 is a linear or branched Ci to C5 alkyl group, C2to C5 alkenyl group, or C3 to C7 cycloalkyl group; R2 to R7 are each independently selected from the group consisting of hydrogen, halogen, a linear or branched Ci to C5 alkyl group, a linear or branched C2 to C5 alkenyl group, a linear or branched Ci to C5 alkoxy group, and a Ce to C12 aryl group; and n is 1 , 2, or 3.30 3. The silicon compound of Claim 1 , wherein the silicon compound of Formula 1 is selected from the group consisting of:Foreignfiling text P24-236-SEC-WO01 202512104030Foreignfiling text P24-236-SEC-WO01 20251210Foreignfiling_text_P24-236-SEC-WO01 20251210420(45) (46) (47) (48)0Foreignfiling_text_P24-236-SEC-WO01 2025121043(53) (54) (55) (56)5(61 ) (62) (63) (64) 0Foreignfiling_text_P24-236-SEC-W001_20251210(73) (74) (75) (76)20(77) (78) (79) (80)30Foreignfiling text P24-236-SEC-WO01 202512104530Foreignfiling text_P24-236-SEC-W001_2025121030Foreignfiling text P24-236-SEC-WO01 202512104730Foreignfiling_text_P24-236-SEC-W001_202512104830Foreignfiling text P24-236-SEC-WO01 202512104930Foreignfiling text P24-236-SEC-WO01 2025121030Foreignfiling text P24-236-SEC-WO01 2025121030Foreignfiling_text_P24-236-SEC-W001_202512105230Foreignfiling text P24-236-SEC-WO01 20251210534. A method for preparing a silicon compound represented by the following Formula 1, comprising: reacting a compound of the following Formula 2 with a silane compound of the20 following Formula 3 in the presence of an alkyl-lithium (Alkyl- Li) to prepare the silicon compound represented by the following Formula 1:[Formula 1]Foreignfiling text P24-236-SEC-WO01 2025121054[Formula 3]in the Formulae 1 , 2, and 3,R1 is a linear or branched Ci to C10 alkyl group, a linear or branched C2 to C10 alkenyl group, or C3 to C10 cycloalkyl group;R2 to R? are each independently selected from the group consisting of hydrogen, halogen, a linear or branched Ci to C10 alkyl group, a linear or branched C2 to C10 alkenyl group, a linear or branched Ci to C10 alkoxy group, and a Ce to C12 aryl15 group;X is F, Cl, Br or I; and n is 1 , 2, or 3.

205. The method of Claim 4, wherein the alkyl-lithium (Alkyl-Li) is (C1-C5) alkyl lithium.

6. The method of Claim 4, further comprising: reacting a compound represented by the following Formula 4 with a primary amine represented by the following Formula 5 to prepare the silicon compound represented by the following Formula 2:[Formula 2]30Foreignfiling text P24-236-SEC-WO01 2025121055[Formula 4]R2R3— Si— XX5[Formula 5]R1-NH2 in the Formulae 2, 4 and 5, R1 to R3, and X are defined as in Claim 4.

7. The method of Claim 4, wherein when at least one of R2 to R? is / are halogen, a step of reacting the silicon compound represented by Formula 1 with a metal hydride (MH) is further conducted, and the metal hydride is selected from the group consisting of lithium hydride (LiH), sodium hybride (NaH), lithium boron15 hydride (IJBH4), lithium aluminum hydride (UAIH4), sodium aluminum hydride (NaAIH4) and sodium boron hydride (NaBH4).

8. A method for depositing a silicon-containing film using a vapor deposition process, the method comprising the steps of:20 a) providing a substrate in a reactor; b) introducing into the reactor at least one silicon precursor compound represented by the following Formula 1:whereinForeignfiling text P24-236-SEC-WO01 2025121056Ri is a linear or branched Ci to Cw alkyl group, a linear or branched C2 to Cw alkenyl group, or C3 to C10 cycloalkyl group;R2 to R? are each independently selected from the group consisting of hydrogen,5 halogen, a linear or branched Ci to Cw alkyl group, a linear or branched C2 to Cw alkenyl group, a linear or branched Ci to Cw alkoxy group, and a Ce to C12 aryl group; and n is 1 , 2, or 3, c) purging the reactor with a purge gas; d) introducing an oxygen-containing source or a nitrogen-containing source into the reactor; and15 e) purging the reactor with a purge gas, wherein steps b through e are repeated until a desired thickness of the film is deposited.

209. The method of Claim 8, wherein the at least one silicon precursor compound is selected from the group consisting of:30Foreignfiling text P24-236-SEC-WO01 202512105730Foreignfiling text_P24-236-SEC-W001_2025121030Foreignfiling text P24-236-SEC-WO01 202512105910Foreignfiling_text_P24-236-SEC-WO01 202512100(61 ) (62) (63) (64)0Foreignfiling text P24-236-SEC-WO01 20251210(77) (78) (79) (80)30Foreignfiling text P24-236-SEC-WO01 202512106230Foreignfiling text P24-236-SEC-WO01 202512106330Foreignfiling text P24-236-SEC-WO01 202512106430Foreignfiling_text_P24-236-SEC-WO01 20251210(135) (136) (137) (138)0Foreignfiling_text_P24-236-SEC-WO01 20251210660Foreignfiling text P24-236-SEC-WO01 20251210670Foreignfiling text P24-236-SEC-WO01 20251210Foreignfiling_text_P24-236-SEC-WO01 2025121069(195) (196) (197) (198)(199) (200) (201 ) (202)Foreignfiling text P24-236-SEC-WO01 2025121070510. The method of Claim 8, wherein the vapor deposition process comprises Atomic Layer Deposition (ALD), Plasma Enhanced Atomic Layer Deposition (PEALD), Chemical Vapor Deposition (CVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), or Furnace Chemical Vapor Deposition (FCVD) process.

11. The method of Claim 8, wherein the purge gas is selected from the group consisting of argon (Ar), nitrogen (N2), helium (He), neon (Ne), hydrogen (H2), and mixtures thereof.1512. The method of Claim 8, wherein the oxygen-containing source is selected from the group consisting of oxygen, peroxide, oxygen plasma, water vapor, water vapor plasma, hydrogen peroxide, ozone source, and mixtures thereof; and the nitrogen-containing source is selected from the group consisting of ammonia,20 hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen / hydrogen, ammonia plasma, nitrogen plasma, nitrogen / hydrogen plasma, and mixture thereof.

13. The method of Claim 8, wherein the silicon containing film is a silicon oxide (SiCh) film, a carbon-doped silicon oxide (SiCO) film, a silicon nitride (SiN) film, a carbon-doped silicon nitride (SiCN) film, a silicon oxynitride (SiON) film, or a carbon- doped silicon oxynitride (SiCON) film.

14. A semiconductor device comprising the silicon-containing film deposited by the method of Claim 8.30

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