Composition for forming resist underlayer film
WO2026134320A1PCT designated stage Publication Date: 2026-06-25NISSAN CHEM CORP
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- NISSAN CHEM CORP
- Filing Date
- 2025-12-19
- Publication Date
- 2026-06-25
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Figure JP2025044486_25062026_PF_FP_ABST
Abstract
The present invention provides: a composition for forming a resist underlayer film, which makes it possible to form a good resist pattern while improving sensitivity; and others. This composition for forming a resist underlayer film contains a polymer (A) having a structural unit represented by formula (1) and a solvent. The polymer (A) is contained as a main component among film constituent components of the composition for forming a resist underlayer film. (In formula (1), R1 represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms. R2 represents a single bond or an alkylene group. R3 represents a blocked isocyanate group.)
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