Composition for forming resist underlayer film

WO2026134320A1PCT designated stage Publication Date: 2026-06-25NISSAN CHEM CORP

Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
NISSAN CHEM CORP
Filing Date
2025-12-19
Publication Date
2026-06-25

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Abstract

The present invention provides: a composition for forming a resist underlayer film, which makes it possible to form a good resist pattern while improving sensitivity; and others. This composition for forming a resist underlayer film contains a polymer (A) having a structural unit represented by formula (1) and a solvent. The polymer (A) is contained as a main component among film constituent components of the composition for forming a resist underlayer film. (In formula (1), R1 represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms. R2 represents a single bond or an alkylene group. R3 represents a blocked isocyanate group.)
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