Substrate processing system

Abstract

A substrate processing system according to one aspect of the present invention comprises: a process chamber having a reaction space formed therein; a substrate support unit coupled to the process chamber to support a substrate; and a boron-containing precursor supply device for supplying a boron-containing precursor gas to the reaction space in the process chamber. The boron-containing precursor supply device includes: a canister which is filled with a boron-containing precursor liquid therein and receives a carrier gas to generate the boron-containing precursor gas from the boron-containing precursor liquid contained therein and discharge same; and a gas transfer pipe which is connected between the canister and the process chamber to transfer the boron-containing precursor gas from the canister to the process chamber and is heated to a predetermined temperature to prevent liquefaction of the boron-containing precursor gas.

Description

Substrate processing system

[0001] The present invention relates to semiconductor manufacturing, and more specifically, to a substrate processing system.

[0002] To manufacture semiconductor devices, various substrate processing processes are performed in a vacuum-based substrate processing system. For example, processes such as loading a substrate into a process chamber and depositing a thin film on the substrate may be carried out. To facilitate these processes, the substrate processing system can supply various process gases into the process chamber.

[0003] With the recent increase in the high integration of semiconductor devices, signal transmission delays caused by wiring structures are becoming important in device performance, in addition to the performance of the transistor itself. In this regard, there is a growing demand for improvements in wiring structures. New insulating materials are being developed to reduce the resistance of metal wiring within the wiring structure, as well as to reduce the dielectric constant of the insulating layer and prevent metal diffusion.

[0004] For example, boron nitride (BN) is being studied as a low dielectric constant insulating material in next-generation wiring structures, and processes for forming such boron nitride thin films are being developed. However, when forming boron nitride thin films, boron-containing precursors used as precursors are susceptible to thermal deformation and prone to vaporization, making it difficult to store and supply them stably.

[0005] The present invention aims to solve various problems, including those mentioned above, by providing a substrate processing system capable of increasing process reliability by stably storing and supplying a boron-containing precursor. However, these problems are exemplary and do not limit the scope of the present invention.

[0006] A substrate processing system according to one aspect of the present invention for solving the above problem comprises a process chamber having a reaction space formed therein, a substrate support member coupled to the process chamber for supporting the substrate, and a boron-containing precursor supply device for supplying a boron-containing precursor gas to the reaction space within the process chamber, wherein the boron-containing precursor supply device comprises a storage tank capable of storing a boron-containing precursor in a liquid state, a chiller box capable of flowing a cooling medium to cool the storage tank at least partially surrounding the storage tank to prevent vaporization of the boron-containing precursor liquid, a canister filled with a boron-containing precursor liquid supplied from the storage tank and receiving a carrier gas to generate and discharge a boron-containing precursor gas from the boron-containing precursor liquid inside, and a gas transfer pipe connected between the canister and the process chamber to transfer the boron-containing precursor gas from the canister to the process chamber, and heated to a predetermined temperature to prevent liquefaction of the boron-containing precursor gas.

[0007] In the above substrate processing system, the boron-containing precursor supply device may include a heater jacket wound around the gas transfer pipe to heat the gas transfer pipe.

[0008] In the above substrate processing system, the temperature of the heater jacket can be controlled to have a temperature gradient or temperature step such that the temperature of the gas transfer piping rises from the canister toward the process chamber.

[0009] In the above substrate processing system, the temperature of the heater jacket is 30 to 40 from the canister toward the process chamber o It can be controlled to have a temperature step that gradually increases within the C temperature range.

[0010] In the above substrate processing system, the heater jacket includes a first heater jacket surrounding the gas transfer pipe and adjacent to the canister, and a second heater jacket surrounding the gas transfer pipe and adjacent to the process chamber, wherein the temperature of the second heater jacket can be controlled to be higher than the temperature of the first heater jacket.

[0011] In the above substrate processing system, the heater jacket further includes a third heater jacket positioned between the first heater jacket and the second heater jacket, which surrounds the gas delivery pipe, and the temperature of the third heater jacket can be controlled to be higher than the temperature of the first heater jacket and the temperature of the second heater jacket can be controlled to be higher than the temperature of the third heater jacket.

[0012] In the above substrate processing system, the boron-containing precursor supply device may include a heat exchanger capable of circulating a cooling medium to the chiller box.

[0013] In the above substrate processing system, the boron-containing precursor in the storage tank includes a borazine precursor, and the chiller box can maintain the storage tank at a sub-zero temperature.

[0014] In the above substrate processing system, the canister can be maintained at room temperature without a separate vaporization device.

[0015] According to a substrate processing system according to some embodiments of the present invention as described above, a boron-containing precursor is stably stored in a liquid state in a storage tank within a boron-containing precursor supply device, and when necessary, the boron-containing precursor liquid is supplied from the storage tank to a canister to supply boron-containing precursor gas through the canister, and by heating the gas transfer piping, the boron-containing precursor gas can be stably supplied to a process chamber, and process reliability can be increased. Of course, the scope of the present invention is not limited by these effects.

[0016] FIG. 1 is a schematic cross-sectional view showing a substrate processing system according to one embodiment of the present invention.

[0017] FIG. 2 is a cross-sectional view showing a gas transfer pipe partially enlarged in a substrate processing system according to some embodiment of the present invention.

[0018] FIGS. 3 and 4 are cross-sectional views showing a gas transfer piping in part in a substrate processing system according to some embodiments of the present invention.

[0019] Hereinafter, several preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0020] The embodiments of the present invention are provided to more fully explain the invention to those skilled in the art, and the following embodiments may be modified in various different forms, and the scope of the invention is not limited to the following embodiments. Rather, these embodiments are provided to make the disclosure more faithful and complete and to fully convey the spirit of the invention to those skilled in the art. In addition, the thickness or size of each layer in the drawings is exaggerated for convenience and clarity of explanation.

[0021] FIG. 1 is a schematic cross-sectional view showing a substrate processing system (100a) according to one embodiment of the present invention, and FIG. 2 is a cross-sectional view showing a gas transfer pipe partially enlarged in the substrate processing system (100a) according to some embodiment of the present invention.

[0022] Referring to FIG. 1, the substrate processing system (100a) may include a process chamber (110), a substrate support (130), and a boron-containing precursor supply device (140a).

[0023] More specifically, a reaction space (112) in which a substrate (S) can be processed may be formed in the process chamber (110). The process chamber (110) may be connected to a vacuum pump (not shown) through an exhaust pipe (114) to create a vacuum atmosphere. A throttle valve (117) for controlling the opening rate may be installed in the exhaust pipe (114). The throttle valve (117) may be used to control the pressure in the reaction space (112) within the process chamber (110).

[0024] Furthermore, the process chamber (110) may be equipped with an entrance / exit for loading a substrate (S) into or from the reaction space (112) and a gate structure (not shown) for opening and closing the same. The process chamber (110) may be provided in various shapes and, for example, may include a body portion (1102) and a top lead (1104). For example, the body portion (1102) may define the reaction space (112) and have an opening formed at its top, and the top lead (1104) may be coupled to the body portion (1102) to cover the opening of the body portion (1102).

[0025] A substrate support member (130) may be coupled to a process chamber (110) to support a substrate (S). Since the substrate support member (130) is configured to place a substrate (S) thereon, it may also be called a substrate mounting member, a susceptor, etc. For example, the substrate support member (130) may include a top plate (132) on which the substrate (S) is placed and a shaft (135) for supporting it.

[0026] The shape of the top plate (132) in the substrate support (130) generally corresponds to the shape of the substrate (S), but is not limited thereto and can be provided in various shapes larger than the substrate (S) so as to stably seat the substrate (S). The shaft (135) can be connected to an external motor (not shown) to enable raising and lowering, and optionally, a bellows tube (not shown) may be connected to maintain airtightness.

[0027] In some embodiments, the substrate support (130) may include a heater (not shown) for heating the substrate (S) inside its top plate (132). For example, the heater may include one or more heating wires.

[0028] In some embodiments, the substrate support (130) may include an electrostatic electrode for chucking the substrate therein. When electrostatic power is applied to the electrostatic electrode, an electrostatic force is generated between it and the substrate (S), so that the substrate (S) can be fixed to the top plate (132) of the substrate support (130). In this case, the substrate support (130) may be called an electrostatic chuck in that the substrate (S) is chucked by the electrostatic force.

[0029] In some embodiments, the substrate processing system (100a) may include a gas injection unit (120). The gas injection unit (120) may be installed in the process chamber (110) to supply process gas to the reaction space (112). More specifically, the gas injection unit (120) may be installed in the process chamber (110) so as to face the substrate support (130). For example, the gas injection unit (120) may be installed at the top of the process chamber (110) to inject process gas onto a substrate (S) placed on the substrate support (130).

[0030] In some embodiments, the gas injection unit (120) may include an inlet (122) into which process gas is introduced, and a distribution plate (124) for injecting the process gas introduced through the inlet (122) and dispersed internally into the reaction space (112). A plurality of through holes may be formed in the distribution plate (124). Optionally, the gas injection unit (120) may further include a blocker plate internally for dispersing the process gas that has passed through the inlet (122).

[0031] The gas injection unit (120) may have various forms, such as a shower head or a nozzle. If the gas injection unit (120) is in the form of a shower head, the gas injection unit (120) may be coupled to the process chamber (110) in a manner that partially covers the upper part of the process chamber (110). For example, the gas injection unit (120) may be coupled to the top lid (1104) of the process chamber (110).

[0032] In some embodiments, the substrate processing system (100a) may include an RF power supply (not shown) for forming plasma within the process chamber (110). The RF power supply may be connected to the process chamber (110) to form a plasma atmosphere in the reaction space (112) inside the process chamber (110). For example, the RF power supply (140a) may be connected to a gas injection unit (120), in which case the gas injection unit (120) may be referred to as a power supply electrode or an upper electrode.

[0033] In some embodiments, the boron-containing precursor supply device (140a) may include a canister (141) and a gas transfer pipe (143) to supply a boron-containing precursor gas (BPG) to a process chamber (110). Furthermore, the boron-containing precursor supply device (140a) may further include an additional gas transfer pipe (142) to supply a carrier gas (CG) to the canister (141).

[0034] For example, the canister (141) may have a tubular structure so that a boron-containing precursor liquid (BPL) is filled inside it. The canister (141) may receive a carrier gas (CG) to generate and discharge a boron-containing precursor gas (BPG) from the boron-containing precursor liquid (BPL) inside it. For example, the carrier gas (CG) may include an inert gas, such as argon (Ar), nitrogen (N2) gas, etc.

[0035] A gas transfer pipe (142) may be connected to the canister (141) so that a carrier gas (CG) can be introduced, and a gas transfer pipe (143) may be connected so that a boron-containing precursor gas (BPG) can be discharged. For example, the gas transfer pipes (142, 143) may be connected to the canister (141) such that a portion thereof extends into the canister (141). For example, the carrier gas (CG) supplied into the canister (141) may be supplied to the process chamber (110) through the gas transfer pipe (143) together with the boron-containing precursor gas (BGG) vaporized from the boron-containing precursor liquid (BPL) within the canister (141).

[0036] A gas transfer pipe (143) may be connected between a canister (141) and a process chamber (110). For example, one end of the gas transfer pipe (143) may extend into the canister (141), and the other end may be connected to the process chamber (110). In some embodiments, the gas transfer pipe (143) may be connected to a gas injection unit (120), and more specifically, to an inlet (122). Accordingly, a boron-containing precursor gas (BPG) may be supplied from the canister (141) to the gas injection unit (120) through the gas transfer pipe (143) and injected into a reaction space (112) within the process chamber (110) through the gas injection unit (120).

[0037] Flow regulators (MFC1, MFC2) may be installed in the gas delivery pipes (142, 143), respectively. For example, the flow regulator (MFC1) may be used to regulate the flow rate of the carrier gas (CG) flowing through the gas delivery pipe (142), and the flow regulator (MFC2) may be used to regulate the flow rate of the boron-containing precursor gas (BPG) flowing through the gas delivery pipe (143).

[0038] Furthermore, a connecting pipe may be installed between the gas delivery pipes (142, 143), and a valve (V1) may be installed in the connecting pipe. When the valve (V1) is opened, carrier gas (CG) can be supplied from the gas delivery pipe (142) to the gas delivery pipe (143). Optionally, valves (not shown) for opening and closing the gas flow may also be installed in the gas delivery pipes (142, 143). For example, valves may be installed in the gas delivery pipes (142, 143) upstream and / or downstream of the flow regulators (MFC1, MFC2), respectively.

[0039] In some embodiments, the boron-containing precursor comprises a borazine precursor, and the boron-containing precursor liquid (BPL) may comprise a borazine precursor liquid. For example, borazine may refer to an inorganic compound defined by the chemical formula B3H6N3. Borazine has a boiling point of 55 o Since the temperature is relatively low at C, it may deform at high temperatures. The canister (141) may be filled with borazine precursor liquid, and the canister (141) may be maintained at room temperature or a lower temperature to prevent denaturation of the borazine precursor. For example, the canister (141) may be at room temperature without a separate temperature control device or vaporization device, or may be maintained at room temperature or a lower temperature through a separate temperature control device. When the canister (141) is at room temperature, the boron-containing precursor liquid (BPL) may vaporize in the canister (141) without a separate vaporization device. Therefore, since temperature control of the vaporization device within the canister (141) is not required, the device can be simplified.

[0040] In some embodiments, the boron-containing precursor supply device (140a) may include a canister (141), gas delivery pipes (142, 143), a storage tank (146), and a chiller box (147).

[0041] The storage tank (146) can store a boron-containing precursor in a liquid state. The boron-containing precursor liquid (BPL) stored in the storage tank can be supplied to a canister (141). The canister (141) can receive the boron-containing precursor liquid (BPL) from the storage tank (146) and fill it as needed. For example, a water level sensor (not shown) is installed in the canister (141), and when it is detected that the boron-containing precursor liquid (BPL) in the canister (141) has dropped below a predetermined water level, the boron-containing precursor liquid (BPL) can be supplied from the storage tank (146) to the canister (141).

[0042] A chiller box (147) may be provided to cool the storage tank (146) to a temperature below a predetermined temperature to prevent vaporization of the boron-containing precursor liquid (BPL). For example, the chiller box (147) may at least partially surround the storage tank (146), and a cooling medium may flow inside it to cool the storage tank (146). By controlling the temperature of this cooling medium, the temperature of the storage tank (146) inside the chiller box (147) can be controlled.

[0043] As described above, the boron-containing precursor liquid (BPL), such as borazine liquid, needs to be maintained at a low temperature lower than room temperature, such as below zero. Accordingly, the chiller box (147) can allow a cooling medium to flow below zero to maintain the storage tank (146) at a below-zero temperature.

[0044] In some embodiments, the boron-containing precursor supply device (140a) may include a heat exchanger (148), and the heat exchanger (148) may circulate a cooling medium to a chiller box (147). For example, a cooling medium at sub-zero temperatures may be supplied from the heat exchanger (146) to the chiller box (147), and a cooling medium with a raised temperature may be introduced into the chiller box (147) and cooled back to a sub-zero temperature.

[0045] In the boron-containing precursor supply device (140a), the canister (141) can be maintained at room temperature, and accordingly, the boron-containing precursor liquid (BPL) can be vaporized within the canister (141) without a separate vaporizer. Therefore, there is a problem in that it is difficult to store a large amount of the boron-containing precursor liquid (BPL) within the canister (141). To solve this, the boron-containing precursor liquid (BPL) can be stored at a low temperature in a storage tank (146) to prevent or minimize vaporization, and then supplied in a certain amount from the storage tank (146) to the canister (141) whenever necessary.

[0046] In the boron-containing precursor supply device (140a), the storage tank (146) may have a large volume so as to stably store a large amount of boron-containing precursor liquid (BPL). In contrast, the canister (141) may have a relatively small volume because it is provided to vaporize a relatively small amount of boron-containing precursor liquid (BPL) at room temperature and supply it as boron-containing precursor gas (BPG). Therefore, the volume of the storage tank (146) may be larger than the volume of the canister (141), and may have a large volume, for example, more than 10 times.

[0047] According to the boron-containing precursor supply device (140a), the boron-containing precursor liquid (BPL) can be stably stored in a storage tank (146) at a sub-zero temperature and then supplied to a canister (141) at room temperature whenever necessary. Thus, the amount and time the boron-containing precursor liquid (BPL) is stored in the canister (141) can be reduced, thereby stabilizing the storage and supply of the boron-containing precursor liquid (BPL). Furthermore, the temperature of the storage tank (146) can be stably maintained at a low temperature using a chiller box (147) and a heat exchanger (148), thereby increasing the stability of the storage and supply of the boron-containing precursor liquid (BPL).

[0048] In some embodiments, as illustrated in FIG. 2, the boron-containing precursor supply device (140a) may include a heating device, such as a heater jacket (144), wound around the gas delivery pipe (143) to heat the gas delivery pipe (143). For example, the heater jacket (144) may have a jacket structure with a built-in heating wire and may be positioned to surround the outer surface of the gas delivery pipe (143). For example, power may be supplied from a power supply unit (1431) to the heater jacket (144) so ​​that the heating wire within the heater jacket (144) is resistance heated.

[0049] Generally, the boron-containing precursor gas (BPG) can be liquefied or condensed in a gas delivery pipe (143) at room temperature or a lower temperature. However, by heating the gas delivery pipe (143) using a heater jacket (144), the boron-containing precursor gas (BPG) can be supplied to the process chamber (110) without being liquefied within the gas delivery pipe (143).

[0050] Boron-containing precursor gas (BPG), such as borazine gas, can be liquefied at room temperature or low temperature, but may be deformed if heated to too high a temperature. For example, the heater jacket (144) is heated so that the gas delivery pipe (143) is at a temperature above room temperature, e.g., 28 to 45 o C temperature range, more strictly 30 to 40 o This can be controlled so that it can be maintained within the C temperature range. In the case that the temperature of the gas delivery pipe (143) drops below room temperature, the gas delivery pipe (143) is approximately 26 in that the boron-containing precursor gas (BPG) can be liquefied. o C or higher, to ensure greater stability, 30 o It can be maintained at a temperature of C or higher. In addition, the temperature of the gas delivery pipe (143) is 45 o In the sense that the boron-containing precursor gas (BPG) may be deformed if it rises above C, the gas delivery pipe (143) is 45o C or lower, or more stably 40 o It can be maintained at temperatures below C.

[0051] In some embodiments, the temperature of the heater jacket (144) may be controlled to have a predetermined temperature gradient or temperature step along the length of the gas delivery pipe (143). For example, the temperature of the heater jacket (144) may be controlled to have a temperature step or a temperature gradient in which the temperature of the gas delivery pipe (143) rises stepwise as it moves from the canister (141) toward the process chamber (110). Accordingly, the temperature of the gas delivery pipe (143) may be controlled to be higher in the part closer to the process chamber (110) than in the part closer to the canister (141).

[0052] As mentioned above, since the canister (141) needs to be maintained at room temperature or a lower temperature, the temperature of the gas delivery pipe (143) at the part connected to the canister (141) or the part adjacent thereto is at a level slightly higher than room temperature, for example, 26 o C or higher, or 30 for greater stability o It needs to be maintained at a temperature above C and, as it moves further away from the canister (141), at a higher temperature to prevent the liquefaction of the boron-containing precursor gas (BPG).

[0053] In this regard, the temperature of the heater jacket (144) can be controlled to have a predetermined temperature rise step or temperature rise slope as it moves from the canister (141) toward the process chamber (110) along the length of the gas transfer pipe (143). For example, the temperature of the heater jacket (144) is 30 to 40 as it moves from the canister (141) toward the process chamber (110). o It can be controlled to have a temperature step that gradually increases in the C temperature range.

[0054] By using the aforementioned boron-containing precursor supply device (140a), boron-containing precursor gas (BPG) can be stably generated from boron-containing precursor liquid (BPL) using a canister (141) and supplied to a gas delivery pipe (143). Furthermore, by heating the gas delivery pipe (143) using a heater jacket (144), the boron-containing precursor gas (BPG) can be prevented from liquefying within the gas delivery pipe (143).

[0055] The above-described substrate processing system (100a) can be used as a chemical vapor deposition (CVD) device or a plasma enhanced chemical vapor deposition (PECVD) device for depositing a thin film on a substrate (S), as well as as an atomic layer deposition (ALD) device or a plasma atomic layer deposition (PEALD) device. For example, the substrate processing system (100a) can be used to form a boron compound, such as a boron nitride film or a boron carbonitride film, on a substrate (S) by supplying a boron-containing precursor gas (BPG) into a process chamber (110) using a boron-containing precursor supply device (140a).

[0056] FIGS. 3 and FIGS. 4 are cross-sectional views showing a gas transfer pipe in part in a substrate processing system (100a) according to some embodiments of the present invention.

[0057] Referring to FIG. 3, in some embodiments, the heater jacket (144) may include a first heater jacket (144a) and a second heater jacket (144b). For example, the first heater jacket (144a) and the second heater jacket (144b) may be understood as the heater jacket (144) divided into two pieces, the first heater jacket (144a) being the piece closer to the canister (141) and the second heater jacket (144b) being the piece closer to the process chamber (110).

[0058] The first heater jacket (144a) may surround the gas delivery pipe (143) and be positioned close to the canister (141). For example, the first heater jacket (144a) may be provided to surround the gas delivery pipe (143) at a predetermined distance from the outer surface of the canister (141). The first heater jacket (144a) may include a first heating wire (not shown) for heating.

[0059] The second heater jacket (144b) may surround the gas delivery pipe (143) and be positioned close to the process chamber (110). For example, the second heater jacket (144b) may be provided to surround the gas delivery pipe (143) at a predetermined distance from the outer surface of the process chamber (110). The second heater jacket (144b) may include a second heating wire (not shown) for heating.

[0060] In some embodiments, the first heater jacket (144a) and the second heater jacket (144b) may be controlled to different temperatures. For example, the heating wires inside the first heater jacket (144a) and the second heater jacket (144b) may be provided separately to control the temperature separately. However, in the first heater jacket (144a) and the second heater jacket (144b), the jackets surrounding the heating wires may be provided separately from each other or as a single unit. As another example, the first heater jacket (144a) and the second heater jacket (144b) may use a single continuous heating wire, but the temperature may be controlled differently by varying the density of the heating wire inside.

[0061] In some embodiments, the temperature of the second heater jacket (144b) may be controlled to be higher than the temperature of the first heater jacket (144a). For example, the temperature of the first heater jacket (144a) is 30 to 34 o Controlled in a temperature range of C, and the temperature of the second heater jacket (144b) is 36 to 40 o It can be controlled within a temperature range of C. By controlling the temperature of the first heater jacket (144a) and the second heater jacket (144b), a temperature step can be created within the heater jacket (144). Accordingly, a temperature step can be created within the gas delivery pipe (143), such that the part closer to the process chamber (110) has a higher temperature than the part closer to the canister (141).

[0062] In some embodiments, the first heater jacket (144a) may be positioned at a portion spaced a predetermined distance from the outer surface of the canister (141) in the gas delivery pipe (143) to reduce the effect on the temperature of the canister (141).

[0063] Referring to FIG. 4, in some embodiments, the heater jacket (144) may include a first heater jacket (144a), a second heater jacket (144b), and a third heater jacket (144c). For example, the first to third heater jackets (144a, 144b, 144c) may be understood as dividing the heater jacket (144) into three pieces, the first heater jacket (144a) being the piece near the canister (141), the second heater jacket (144b) being the piece near the process chamber (110), and the third heater jacket (144c) being the piece between the two.

[0064] Refer to FIG. 3 for a description of the first heater jacket (144a) and the second heater jacket (144b). Additionally, a third heater jacket (144c) may surround the gas delivery pipe (143) and be positioned between the first heater jacket (144a) and the second heater jacket (144b).

[0065] In some embodiments, the first to third heater jackets (144a, 144b, 144c) may be controlled to at least partially different temperatures. For example, the heating wires inside the first to third heater jackets (144a, 144b, 144c) may be provided separately to control the temperature independently. However, in the first to third heater jackets (144a, 144b, 144c), the jackets surrounding the heating wires may be provided separately from each other or as a single unit. As another example, the first to third heater jackets (144a, 144b, 144c) may use a single continuous heating wire, but the temperature may be controlled differently by varying the heating wire density, etc., inside.

[0066] In some embodiments, the temperature of the third heater jacket (144c) may be controlled to be higher than the temperature of the first heater jacket (144a), and the temperature of the second heater jacket (144b) may be controlled to be higher than the temperature of the third heater jacket (144c). For example, the temperature of the first heater jacket (144a) is 28 to 32 o Controlled in the C temperature range, and the temperature of the third heater jacket (144c) is 33 to 37 o Controlled in the C temperature range, and the temperature of the second heater jacket (144b) is 38 to 42 o It can be controlled within a temperature range of C. By controlling the temperature of these first to third heater jackets (144a, 144b, 144c), a temperature step can be created within the heater jacket (144). Accordingly, a temperature step can be created within the gas delivery pipe (143), such that the temperature rises stepwise from the canister (141) toward the process chamber (110).

[0067] In the embodiments of FIGS. 3 and FIG. 4 described above, the heater jacket (144) is divided into two or three pieces to control the temperature differently, but in other embodiments, it is also possible to divide the heater jacket (144) into four or more pieces to control the temperature differently.

[0068] As described above, by using a boron-containing precursor supply device (140a) to control the temperature of the heater jacket (144) so ​​that the temperature of the gas transfer pipe (143) rises stepwise or gradually from the canister (141) toward the process chamber (110), the liquefaction of the boron-containing precursor gas (BPG) within the gas transfer pipe (143) can be effectively prevented while reducing or preventing the temperature rise of the canister (141).

[0069] According to the substrate processing system (100a) described above, a boron-containing precursor gas (BPG) can be stably supplied to a reaction space (112) within a process chamber (110) using a boron-containing precursor supply device (140a). Accordingly, by using the substrate processing system (100a), a boron compound can be reliably formed on a substrate (S), thereby increasing process reliability.

[0070] The present invention has been described with reference to the embodiments illustrated in the drawings, but this is merely illustrative, and those skilled in the art will understand that various modifications and equivalent alternative embodiments are possible therefrom. Accordingly, the true technical scope of protection of the present invention should be determined by the technical spirit of the appended claims.

Claims

1. A process chamber with a reaction space formed inside; A substrate support member coupled to the process chamber for substrate support; and It includes a boron-containing precursor supply device for supplying a boron-containing precursor gas to the reaction space within the process chamber, and The above boron-containing precursor supply device is, A storage tank capable of storing a boron-containing precursor in a liquid state; A chiller box that at least partially surrounds the storage tank and through which a cooling medium can flow to cool the storage tank to prevent vaporization of the boron-containing precursor liquid; A canister filled with a boron-containing precursor liquid supplied from the above storage tank, supplied with a carrier gas to generate and discharge a boron-containing precursor gas from the boron-containing precursor liquid inside; and A gas transfer pipe comprising a canister and a process chamber connected to transfer a boron-containing precursor gas from the canister to the process chamber, and heated to a predetermined temperature to prevent liquefaction of the boron-containing precursor gas. Substrate processing system.

2. In Paragraph 1, The above boron-containing precursor supply device is, A heater jacket wrapped around the gas transfer pipe to heat the gas transfer pipe, Substrate processing system.

3. In Paragraph 2, The temperature of the heater jacket is controlled to have a temperature gradient or temperature step such that the temperature of the gas transfer piping rises from the canister toward the process chamber. Substrate processing system.

4. In Paragraph 2, The temperature of the heater jacket is 30 to 40 from the canister toward the process chamber o A substrate processing system controlled to have a temperature step that gradually increases in a temperature range of C.

5. In Paragraph 2, The heater jacket mentioned above is, A first heater jacket surrounding the gas transfer pipe and adjacent to the canister; and It includes a second heater jacket surrounding the above gas transfer piping and located near the process chamber, The temperature of the second heater jacket is controlled to be higher than the temperature of the first heater jacket, Substrate processing system.

6. In Paragraph 5, The heater jacket surrounds the gas transfer pipe and further includes a third heater jacket disposed between the first heater jacket and the second heater jacket. The temperature of the third heater jacket is higher than the temperature of the first heater jacket, and the temperature of the second heater jacket is controlled to be higher than the temperature of the third heater jacket. Substrate processing system.

7. In Paragraph 1, The above boron-containing precursor supply device is, A heat exchanger capable of circulating a cooling medium to the above chiller box, Substrate processing system.

8. In Paragraph 7, The boron-containing precursor in the above storage tank includes a borazine precursor, and The above chiller box maintains the above storage tank at a sub-zero temperature, Substrate processing system.

9. In Paragraph 7, The above canister is a substrate processing system maintained at room temperature without a separate vaporization device.

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