Memory device including stacked conductive contacts
Stacked conductive contacts in memory devices address structural damage issues, enhancing yield, cost-effectiveness, and reliability by improving signal transmission.
WO2026136270A1PCT designated stage Publication Date: 2026-06-25MICRON TECHNOLOGY INC
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- MICRON TECHNOLOGY INC
- Filing Date
- 2025-12-15
- Publication Date
- 2026-06-25
Smart Images
Figure US2025059704_25062026_PF_FP_ABST
Abstract
Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes: a first conductive material and a second conductive material located on different levels of the apparatus; a memory cell pillar extending through the first conductive material and the second conductive material; a first conductive contact coupled to a first conductive structure and coupled to the first conductive material at a first contact location; a second conductive contact coupled to a second conductive structure and coupled to the second conductive material at a second contact location. A direction from the first contact location to the first conductive structure is a first direction. A direction from the second contact location to the second conductive structure is a second direction. The first direction is opposite from the second direction.
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