X-ray detector and manufacturing method therefor
By using a partitioned layout of CZT or CdTe crystal materials of different thicknesses, the problem that existing detectors cannot simultaneously meet the requirements of low-energy and high-energy X-ray detection is solved, achieving a balance between high sensitivity and high resolution, making it suitable for medical imaging and industrial inspection.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- IRAY TECHNOLOGY CO LTD
- Filing Date
- 2025-02-25
- Publication Date
- 2026-07-02
Smart Images
Figure CN2025078958_02072026_PF_FP_ABST
Abstract
Description
An X-ray detector and its manufacturing method Technical Field
[0001] This invention belongs to the field of X-ray detection technology, and in particular relates to an X-ray detector and its manufacturing method. Background Technology
[0002] In the field of X-ray detection, when X-rays pass through an object, their energy attenuates due to interactions with the objects' internal atoms. This attenuation is related to the object's density, composition, and thickness. However, current technologies face a series of challenges when detecting X-rays of different energies. Particularly under low-energy X-ray conditions, the weak penetrating power of low-energy X-rays in detector materials necessitates a longer time to generate electron-hole pairs and transport them to the electrodes, increasing transit time and leading to a pile-up effect, which severely impacts detector performance. Under high-energy X-ray conditions, the strong penetrating power of high-energy X-rays necessitates the use of thicker detector crystals to absorb more X-ray energy to ensure sufficient absorption efficiency, increasing the detector's complexity and cost.
[0003] Furthermore, simultaneously meeting the requirements for low-energy and high-energy X-ray detection within the same detector has always been a challenge in technological development. Existing detectors have shortcomings in material optimization and structural design, making it difficult to achieve a balance between high sensitivity and high resolution in both low-energy and high-energy applications. This limitation restricts the application of detectors in fields such as medical imaging and industrial inspection, especially in scenarios requiring precise differentiation between high-absorbing and low-absorbing tissues.
[0004] Therefore, there is a need to provide an improved technical solution that addresses the shortcomings of the existing technology. Summary of the Invention
[0005] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide an X-ray detector and its manufacturing method, which solves the problem that the same detector in the prior art cannot simultaneously meet the detection requirements of low-energy and high-energy X-rays, and the problem that the detectors in the prior art are difficult to achieve a balance between high sensitivity and high resolution in low-energy and high-energy X-ray applications.
[0006] To achieve the above and other related objectives, the present invention provides a method for manufacturing an X-ray detector, the method comprising the following steps:
[0007] S1. Provide multiple initial crystals with different preset thicknesses. Each initial crystal includes a top surface and a bottom surface facing each other. An electrode structure is formed on both sides of the initial crystal. The electrode structure includes an array of pixel electrodes and a common electrode.
[0008] S2. Each initial crystal of a preset thickness is cut into multiple independent crystal modules of corresponding preset thicknesses.
[0009] S3. Arrange and position multiple independent crystal modules of different preset thicknesses on a substrate to form a multi-energy crystal micro-module;
[0010] S4. Multiple multi-energy crystal micro-modules are spliced together to form a linear array or area array module;
[0011] S5. Attach conductive material to the surface of the common electrode and electrically connect the conductive material to the external circuit.
[0012] Preferably, the material of the initial crystal in step S1 includes CZT or CdTe.
[0013] Preferably, the initial crystals with different preset thicknesses in step S1 include low-energy initial crystals and high-energy initial crystals, wherein the thickness of the low-energy initial crystal is 0.5 mm to 1 mm and the thickness of the high-energy initial crystal is 2 mm to 5 mm.
[0014] Preferably, the arrayed pixel electrodes in step S1 are formed on the bottom surface of the initial crystal, and the common electrode is formed on the top surface of the initial crystal.
[0015] Preferably, each of the independent crystal modules in step S2 includes a grain unit, an array of pixel electrodes formed on opposite sides of the grain unit, and a common electrode.
[0016] Preferably, in step S3, there is a gap between two adjacent independent crystal modules, and the gap is filled with a barrier material.
[0017] Preferably, the size of the gap is 10μm to 100μm, and the blocking material includes tungsten or lead.
[0018] Preferably, in step S4, the linear array module comprises multiple multi-energy crystal micro-modules whose projections in the vertical direction are arranged in a row; the area array module comprises multiple multi-energy crystal micro-modules whose projections in the vertical direction are arranged in at least two columns.
[0019] Preferably, the conductive material in step S5 is electrically connected to the external circuit by wire bonding or adhesive bonding.
[0020] The present invention also provides an X-ray detector, which is manufactured using the above-described X-ray detector manufacturing method.
[0021] As described above, the X-ray detector and its manufacturing method of the present invention have the following beneficial effects:
[0022] The X-ray detector of this invention can simultaneously achieve efficient detection of both low-energy and high-energy X-rays. By using CZT or CdTe crystal materials of different preset thicknesses as initial crystals, these crystals are cut into independent crystal modules of different preset thicknesses. Through partitioning and layout, they are assembled into multi-energy crystal micro-modules, which are then spliced into linear array modules or area array modules. This allows the detector to simultaneously possess low-energy crystal regions and high-energy crystal regions, enabling efficient detection of both low-energy and high-energy X-rays. Furthermore, it achieves a balance between high sensitivity and high resolution in low-energy and high-energy X-ray applications, and enhances the ability to identify X-rays of different energies.
[0023] The X-ray detector manufactured according to this invention comprises a thinner independent crystal module and a thicker independent crystal module. The thinner independent crystal module belongs to the low-energy crystal region and is used for low-energy X-ray detection, which helps to reduce the electron transmission distance and transit time, thereby effectively reducing the pile-up effect. The thicker independent crystal module belongs to the high-energy crystal region and is used for high-energy X-ray detection, so as to improve the absorption efficiency of high-energy X-rays and enhance the performance of the detector. At the same time, the X-ray detector of this invention maintains high resolution and signal clarity in both low-energy and high-energy X-ray applications, performs excellently in medical imaging and industrial inspection, and can effectively distinguish between high-absorbing tissues and low-absorbing tissues, improving the accuracy of material identification. Attached Figure Description
[0024] Figure 1 shows a flowchart of the manufacturing process of the X-ray detector of the present invention.
[0025] Figure 2 shows a schematic diagram of the structure after step S1 is performed in the manufacturing method of the X-ray detector of the present invention.
[0026] Figure 3 shows a schematic diagram of the structure of the independent crystal module formed after step S2 in the manufacturing method of the X-ray detector of the present invention.
[0027] Figure 4a shows a schematic diagram of the structure of one type of dual-energy crystal micromodule formed after performing step S3 in the fabrication method of the X-ray detector of the present invention.
[0028] Figure 4b shows a schematic diagram of another multi-energy crystal micromodule formed after performing step S3 in the fabrication method of the X-ray detector of the present invention.
[0029] Figure 4c shows a schematic diagram of another multi-energy crystal micromodule formed after performing step S3 in the fabrication method of the X-ray detector of the present invention. [0029.1] [Correction 11.03.2025 according to Rule 91] Figure 4d shows a schematic diagram of another multi-energy crystal micro-module formed after step S3 in the manufacturing method of the X-ray detector of the present invention.
[0030] Figure 5a shows a planar schematic diagram of the linear array module formed after step S4 in the manufacturing method of the X-ray detector of the present invention.
[0031] Figure 5b shows a planar schematic diagram of the array module formed after step S4 in the fabrication method of the X-ray detector of the present invention.
[0032] Component Labeling Explanation: 1. Initial Crystal; 2. Pixel Electrode; 3. Common Electrode; 10. Independent Crystal Module; 11. Crystal Unit; 12. Gap; 100. Multi-functional Crystal Module; 101. Substrate; 102. Assembly Base; 200. Linear Array Module; 300. Area Array Module. Detailed Implementation
[0033] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
[0034] Before further describing specific embodiments of the present invention, it should be understood that the scope of protection of the present invention is not limited to the specific embodiments described below; it should also be understood that the terminology used in the embodiments of the present invention is for describing specific embodiments and not for limiting the scope of protection of the present invention. Test methods in the following embodiments that do not specify specific conditions are generally performed under conventional conditions or as recommended by the respective manufacturers.
[0035] When numerical ranges are given in the embodiments, it should be understood that, unless otherwise stated in the present invention, both endpoints of each numerical range and any value between the two endpoints may be selected. Unless otherwise defined, all technical and scientific terms used in this invention have the same meaning as commonly understood by one of ordinary skill in the art. In addition to the specific methods, apparatus, and materials used in the embodiments, based on the knowledge of the prior art possessed by one of ordinary skill in the art and the description of this invention, any prior art methods, apparatus, and materials similar to or equivalent to those described, apparatus, and materials in the embodiments of this invention may be used to implement the present invention.
[0036] Please refer to 1 to 5b. It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.
[0037] Referring to Figure 1, the present invention provides a method for manufacturing an X-ray detector, the method comprising the following steps:
[0038] S1. Provide multiple initial crystals with different preset thicknesses. Each initial crystal includes a top surface and a bottom surface. An electrode structure is formed on both sides of the initial crystal. The electrode structure includes an array of pixel electrodes and a common electrode.
[0039] S2. Each initial crystal of a preset thickness is cut into multiple independent crystal modules of corresponding preset thickness.
[0040] S3. Arrange and position multiple independent crystal modules of different preset thicknesses on the substrate to form a multi-energy crystal micro-module;
[0041] S4. Multiple multi-energy crystal micro-modules are spliced together to form a linear array or area array module;
[0042] S5. Attach conductive material to the surface of the common electrode and electrically connect the conductive material to the external circuit.
[0043] Specifically, by using initial crystals of different preset thicknesses, these crystals are cut into independent crystal modules of different preset thicknesses. These modules are then partitioned and arranged to form multi-energy crystal micro-modules, which are then spliced into linear or area array modules. This allows the detector to simultaneously possess low-energy and high-energy crystal regions. The low-energy crystal region is used for low-energy X-ray detection, which helps reduce the electron transmission distance and transit time, thereby effectively reducing the pile-up effect. The high-energy crystal region is used for high-energy X-ray detection to improve the absorption efficiency of high-energy X-rays. This not only enables efficient detection of both low-energy and high-energy X-rays simultaneously, but also achieves a balance between high sensitivity and high resolution in both low-energy and high-energy X-ray applications.
[0044] First, step S1 is performed, providing multiple initial crystals of different preset thicknesses. Each initial crystal includes a top surface and a bottom surface facing each other. Electrode structures are formed on both sides of the initial crystals. The electrode structures include arrayed pixel electrodes and common electrodes. Refer to Figure 2 for a schematic diagram of the electrode structures formed on both sides of the initial crystals.
[0045] Specifically, the required thickness of the initial crystal is selected in advance according to actual needs, and then electrode processes are performed on each initial crystal to form a common electrode and a pixel electrode on the top and bottom surfaces of each initial crystal, respectively.
[0046] As an example, the material of the initial crystal in step S1 includes CZT or CdTe.
[0047] Specifically, CZT stands for zinc cadmium telluride, a wide-bandgap II-VI compound semiconductor crystal formed by solid solution of CdTe (cadmium telluride) and ZnTe (zinc telluride), possessing excellent detection performance and wide bandgap; CdTe (cadmium telluride) is also an important II-VI compound semiconductor material.
[0048] As an example, the initial crystals with different preset thicknesses in step S1 include low-energy initial crystals and high-energy initial crystals. The thickness of the low-energy initial crystal is 0.5 mm to 1 mm, and the thickness of the high-energy initial crystal is 2 mm to 5 mm.
[0049] Specifically, the low-energy initial crystal is thinner and used for low-energy X-ray detection. The thickness of the low-energy initial crystal can be any value within the range of 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm, 1mm, etc.; the high-energy initial crystal is thicker and used for high-energy X-ray detection. The thickness of the high-energy initial crystal can be any value within the range of 2mm, 2.5mm, 3mm, 3.5mm, 4mm, 4.5mm, 5mm, etc.
[0050] As an example, in step S1, the arrayed pixel electrodes are formed on the bottom surface of the initial crystal, and the common electrode is formed on the top surface of the initial crystal.
[0051] Specifically, the method for forming an array of pixel electrodes on the bottom surface of the initial crystal includes etching or lift-off processes; the material of the pixel electrodes includes one of gold, platinum, and indium.
[0052] The steps of forming an array of pixel electrodes on the bottom surface of an initial crystal using an etching process include: forming a full-surface pixel electrode on the bottom surface of the initial crystal; coating the pixel electrode with photoresist and patterning it; removing unwanted pixel electrodes using dry or wet etching; and removing the photoresist, thus completing the arraying of the pixel electrodes. The formation of the full-surface pixel electrode on the bottom surface of the initial crystal is achieved through physical or chemical vapor deposition, or by vapor deposition.
[0053] The steps of forming an array of pixel electrodes on the bottom surface of an initial crystal by a stripping process include: applying photoresist to the bottom surface of the initial crystal and patterning it; then forming pixel electrodes on the photoresist by physical or chemical vapor deposition or evaporation; and removing unwanted pixel electrode portions from the photoresist while stripping it off; thus forming an array of pixel electrodes.
[0054] Specifically, the common electrode is formed using chemical vapor deposition, physical vapor deposition, or evaporation. The material for the common electrode includes one of the following metals: gold, platinum, or silver.
[0055] Then, step S2 is performed, in which each initial crystal of a preset thickness is cut into multiple independent crystal modules of corresponding preset thicknesses.
[0056] Specifically, using high-precision laser cutting or mechanical cutting equipment, the initial crystal that forms the electrode structure in step S1 is cut into multiple independent crystal modules, that is, the whole crystal is cut into the required single crystal. The specific cutting method and how many independent crystal modules each initial crystal can be cut into need to be determined according to the actual situation, and no excessive limit is made here. Of course, the independent crystal modules cut from a thinner low-energy initial crystal are also thinner, and the independent crystal modules cut from a thicker high-energy initial crystal are also thicker.
[0057] In addition, a cleaning step is required after cutting to remove debris and surface residue generated during cutting.
[0058] As an example, referring to Figure 3, each independent crystal module in step S2 includes a grain unit, an array of pixel electrodes formed on opposite sides of the grain unit, and a common electrode.
[0059] Specifically, each arrayed pixel electrode corresponds to an independent detection area, confining charge collection within the area of the crystal unit. By splicing together multiple independent crystal modules, efficient detection of both low-energy and high-energy X-rays can be achieved simultaneously, realizing a balance between high sensitivity and high resolution in low-energy and high-energy X-ray applications.
[0060] Then, step S3 is performed to arrange and position multiple independent crystal modules of different preset thicknesses on the substrate to form a multi-energy crystal micro-module.
[0061] Specifically, multiple independent crystal modules of different preset thicknesses are arranged. Generally, the independent crystal modules of different thicknesses can be evenly distributed according to actual needs, without any specific pattern. Of course, they can also be arranged in a regular pattern as needed. There is no limit to the specific number of crystal modules to be arranged.
[0062] Specifically, multiple independent crystal modules of different preset thicknesses are arranged and positioned on a substrate. Positioning on the substrate involves surface mount technology (SMT), assembly, or flip-chip soldering. The substrate includes chips or adapter boards. During SMT, an SMT or flip-chip placement machine is used to quickly and accurately mount the independent crystal modules onto the designated pads on the substrate.
[0063] Alternatively, all the independent crystal modules can be arranged and positioned on the same substrate, or independent crystal modules of different preset thicknesses can be arranged and positioned on different substrates.
[0064] In a specific embodiment of the present invention, a thinner independent crystal module and a thicker independent crystal module are arranged laterally and positioned on the same substrate to form a multi-energy crystal micro-module, which is a dual-energy crystal micro-module. Referring to Figure 4a, the pixel electrodes of the dual-energy crystal micro-module are located on the same surface, and there is a height difference between the common electrodes.
[0065] In another specific embodiment of the present invention, four independent crystal modules of different preset thicknesses are arranged and positioned on the same substrate to form a multi-energy crystal micro-module. Referring to Figure 4b, the pixel electrodes of this multi-energy crystal micro-module are located on the same surface, and there is a height difference between the common electrodes. In the multi-energy crystal modules shown in Figures 4a and 4b, the pixel electrodes are on the same surface, which simplifies the patching process. Since the patching surfaces are at the same height, it is not necessary to re-identify the reference surface for patching.
[0066] In another specific embodiment of the present invention, a thinner independent crystal module and a thicker independent crystal module are respectively positioned on the corresponding substrate, and then the common electrode of each independent crystal module is located on the same surface by the assembly base, thereby forming a dual-energy crystal micro-module, see Figure 4c.
[0067] In another specific embodiment of the present invention, four independent crystal modules with different preset thicknesses are respectively positioned on corresponding substrates. Then, an assembly base is used to place the common electrode of each independent crystal module on the same surface, thereby forming a multi-energy crystal micro-module, as shown in Figure 4d. In the multi-energy crystal modules shown in Figures 4c and 4d, the common electrode is on the same surface. During the bonding process, an assembly base is needed to adjust the reference surface for bonding.
[0068] As an example, in step S3, there is a gap between two adjacent independent crystal modules, and the gap is filled with a barrier material (not shown in the figure).
[0069] As an example, the gap size is 10μm to 100μm, and the blocking material includes tungsten or lead.
[0070] Specifically, the gap between two adjacent independent crystal modules is used to reduce photon scattering and signal loss. The gap size can be any value in any range, such as 10μm, 15μm, 20μm, 40μm, 60μm, 80μm, 90μm, 100μm. When the adjacent gap is too small, the substrate may warp during transportation or use, which may cause collisions between adjacent independent crystal modules, resulting in chipping or damage to the independent crystal modules.
[0071] Specifically, a blocking material is filled in the gaps. The blocking material is a highly absorbent material used to block the scattering of high-energy X-rays or the escape of electrons between the independent crystal modules. The blocking material can be filled in the gaps by nano-deposition or electrochemical deposition to ensure the signal independence of the formed multi-energy crystal micro-module.
[0072] Next, step S4 is performed to splice multiple multi-energy crystal micro-modules to form a linear array or area array module.
[0073] Specifically, this process involves splicing multiple integrated multi-energy crystal micro-modules. The splicing can be done manually using tooling fixtures or automatically using a multi-axis splicing machine that automatically identifies, aligns, and places the modules. The modules are then fixed with structural adhesive, screws, or limiting posts to ensure the accuracy of the distribution and splicing position of each multi-energy crystal micro-module.
[0074] As an example, referring to Figure 5a, in step S4, the linear array module includes multiple multi-energy crystal micro-modules whose projections in the vertical direction are arranged in a row; referring to Figure 5b, the area array module includes multiple multi-energy crystal micro-modules whose projections in the vertical direction are arranged in at least two columns.
[0075] In a specific embodiment of the present invention, Figure 5a is a planar schematic diagram of a linear array module composed of four multi-energy crystal micro-modules; Figure 5b is a planar schematic diagram of an area array module composed of four multi-energy crystal modules. The figures only show four multi-energy crystal micro-modules assembled together; of course, the number of multi-energy crystal micro-modules can also be 2, 3, 5, etc., and the specific number is not excessively limited here.
[0076] Finally, step S5 is performed to attach conductive material to the surface of the common electrode and electrically connect the conductive material to the external circuit.
[0077] As an example, the way the conductive material is electrically connected to the external circuit in step S5 includes wire bonding or adhesive bonding.
[0078] Specifically, the conductive material includes one of copper, aluminum, or gold. The conductive material on the surface of the common electrode is connected to the high-voltage terminal by wire bonding to achieve electrical lead-out of the common electrode, or the conductive material on the surface of the common electrode is connected to the high-voltage terminal by adhesive bonding.
[0079] The present invention also provides an X-ray detector, which is manufactured using the above-described X-ray detector manufacturing method.
[0080] Specifically, the X-ray detector includes: a linear array module or an area array module, wherein the linear array module or area array module is composed of multiple multi-energy crystal micro-modules spliced together; the multi-energy crystal micro-module includes a substrate and multiple independent crystal modules arranged and positioned on the substrate, the substrate including at least one substrate; the independent crystal module includes a grain unit, an arrayed pixel electrode and a common electrode, the arrayed pixel electrode is formed on the bottom surface of the grain unit, the common electrode is formed on the top surface of the grain unit, and the grain unit is cut from an initial crystal of different preset thicknesses.
[0081] In summary, the X-ray detector of this invention can simultaneously achieve efficient detection of both low-energy and high-energy X-rays. By using CZT or CdTe crystal materials of different preset thicknesses as initial crystals, these crystals are cut into independent crystal modules of different preset thicknesses. Through partitioning and layout, these modules are assembled into multi-energy crystal micro-modules, which are then spliced into linear or area array modules. This allows the detector to simultaneously possess both low-energy and high-energy crystal regions, enabling efficient detection of both low-energy and high-energy X-rays. Furthermore, it achieves a balance between high sensitivity and high resolution in both low-energy and high-energy X-ray applications, and enhances the ability to identify X-rays of different energies. The X-ray detector manufactured according to this invention comprises a thinner, independent crystal module and a thicker, independent crystal module. The thinner, independent crystal module belongs to the low-energy crystal region and is used for low-energy X-ray detection, which helps to reduce the electron transmission distance and transit time, thereby effectively reducing the pile-up effect. The thicker, independent crystal module belongs to the high-energy crystal region and is used for high-energy X-ray detection, thereby improving the absorption efficiency of high-energy X-rays and enhancing the detector's performance. Simultaneously, the X-ray detector of this invention maintains high resolution and signal clarity in both low-energy and high-energy X-ray applications, performing excellently in medical imaging and industrial inspection. It can effectively distinguish between high-absorbing and low-absorbing tissues, improving the accuracy of material identification. Therefore, this invention effectively overcomes the various shortcomings of existing technologies and has high industrial application value.
[0082] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.
Claims
1. A method for manufacturing an X-ray detector, characterized in that: The manufacturing method includes the following steps: S1. Provide multiple initial crystals with different preset thicknesses. Each initial crystal includes a top surface and a bottom surface facing each other. An electrode structure is formed on both sides of the initial crystal. The electrode structure includes an array of pixel electrodes and a common electrode. S2. Each initial crystal of a preset thickness is cut into multiple independent crystal modules of corresponding preset thicknesses. S3. Arrange and position multiple independent crystal modules of different preset thicknesses on a substrate to form a multi-energy crystal micro-module; S4. Multiple multi-energy crystal micro-modules are spliced together to form a linear array or area array module; S5. Attach conductive material to the surface of the common electrode and electrically connect the conductive material to the external circuit.
2. The method for manufacturing an X-ray detector according to claim 1, characterized in that: The material of the initial crystal in step S1 includes CZT or CdTe.
3. The method for manufacturing an X-ray detector according to claim 1, characterized in that: The initial crystals with different preset thicknesses in step S1 include low-energy initial crystals and high-energy initial crystals. The thickness of the low-energy initial crystal is 0.5 mm to 1 mm, and the thickness of the high-energy initial crystal is 2 mm to 5 mm.
4. The method for manufacturing an X-ray detector according to claim 1, characterized in that: In step S1, the arrayed pixel electrodes are formed on the bottom surface of the initial crystal, and the common electrode is formed on the top surface of the initial crystal.
5. The method for manufacturing an X-ray detector according to claim 1, characterized in that: In step S2, each of the independent crystal modules includes a grain unit, an array of pixel electrodes formed on opposite sides of the grain unit, and a common electrode.
6. The method for manufacturing an X-ray detector according to claim 1, characterized in that: In step S3, there is a gap between two adjacent independent crystal modules, and the gap is filled with a barrier material.
7. The method for manufacturing the X-ray detector according to claim 6, characterized in that: The size of the gap is 10μm to 100μm, and the blocking material includes tungsten or lead.
8. The method for manufacturing an X-ray detector according to claim 1, characterized in that: In step S4, the linear array module includes multiple multi-energy crystal micro-modules whose projections in the vertical direction are arranged in a row; the area array module includes multiple multi-energy crystal micro-modules whose projections in the vertical direction are arranged in at least two columns.
9. The method for manufacturing an X-ray detector according to claim 1, characterized in that: The conductive material in step S5 is electrically connected to the external circuit by wire bonding or adhesive bonding.
10. An X-ray detector, characterized in that, The X-ray detector is manufactured using the manufacturing method of any one of claims 1 to 9.