Temporary fixation film, laminate for temporary fixation, and production method for semiconductor device

Abstract

According to the present invention, a temporary fixation film that is to be used to temporarily fix a semiconductor member and a support member contains (A) a bismaleimide compound, (B) a thermosetting component, and (C) a filler. The (B) component includes (B-1) an epoxy resin, and the (C) component content is at least 10 parts by mass per 100 total parts by mass of the (A) component and the (B-1) component.

Description

Temporary fixing film, temporary fixing laminate, and method for manufacturing a semiconductor device

[0001] The present invention relates to a temporary fixing film, a temporary fixing laminate, and a method for manufacturing a semiconductor device.

[0002] In the manufacturing of semiconductor devices, after an integrated circuit is assembled onto a semiconductor substrate such as a semiconductor wafer or semiconductor chip, the semiconductor component having the semiconductor substrate is sometimes processed. The semiconductor component is subjected to processing treatments such as grinding the back surface and dicing to create individual pieces. The semiconductor component is usually processed while temporarily fixed to a support member via a temporary fixing material, and then the semiconductor component is separated from the support member.

[0003] Regarding temporary fixing materials, there is a known technique in which a temporary fixing material with temporary fixing ability is formed by preparing a temporary fixing film containing a compound having a crosslinkable functional group, attaching it to a support member, and then heat-curing it (for example, Patent Documents 1 and 2 below).

[0004] Japanese Patent Publication No. 2016-204661, International Publication No. 2018 / 216732, Brochure

[0005] With the increasing performance of electronic components in recent years, semiconductor materials are sometimes subjected to high-temperature processing such as sputtering to form metal films, interlayer and metal annealing, and formation of organic redistribution layers. Temporary fixing films used in such advanced processes require that the resulting temporary fixing material possesses high heat resistance.

[0006] Furthermore, although the semiconductor component is separated from the temporary fixing material after processing, any remaining temporary fixing material on the semiconductor component must be removed without damaging the thinned wafer or the uneven bump electrodes. Methods such as cleaning or dissolving with solvents, or grinding, are used to remove the temporary fixing material. However, if the temporary fixing material could be physically removed in one go, it would be possible to shorten the cycle time, reduce costs, and improve environmental compatibility in the manufacturing of semiconductor devices. While it is desirable for the temporary fixing material to have high toughness for ease of removal, hardened materials with increased crosslinking density to obtain heat resistance tend to become brittle.

[0007] The present invention aims to provide a temporary fixing film capable of forming a temporary fixing material having excellent toughness, as well as a temporary fixing laminate and a method for manufacturing a semiconductor device using the same.

[0008] The present invention includes the following aspects: [1] A temporary fixing film used for temporarily fixing a semiconductor member and a support member, comprising (A) a bismaleimide compound, (B) a thermosetting component, and (C) a filler, wherein component (B) comprises (B-1) epoxy resin, and the content of component (C) is 10 parts by mass or more with respect to 100 parts by mass of the total of component (A) and component (B-1). [2] The temporary fixing film according to [1], wherein component (C) is a silica filler. [3] The temporary fixing film according to [1] or [2], wherein component (A) is a bismaleimide compound represented by the following general formula (1). [In formula (1), R represents a divalent hydrocarbon group having 8 to 50 carbon atoms in the main chain, X represents a group represented by the following general formula (2), and n represents an integer of 1 or more. [In formula (2), Ar represents an aromatic ring in which the carbon atoms at positions 3 and 4 of two imide rings are part of the skeleton.] [4] A temporary fixing film according to any one of [1] to [3], wherein the (B-1) component comprises an epoxy resin having an alicyclic structure and an epoxy resin having an aromatic ring. [5] A temporary fixing laminate comprising a support member, a light-absorbing layer, and a temporary fixing material layer in this order, wherein the temporary fixing layer is made of a temporary fixing film according to any one of [1] to [4] or a cured product thereof. [6] A method for manufacturing a semiconductor device, comprising the steps of: preparing the temporary fixing laminate according to [5]; temporarily fixing a semiconductor member to the support member via the temporary fixing material layer; processing the semiconductor member temporarily fixed to the support member; and irradiating the light-absorbing layer of the temporary fixing laminate with light from the support member side to separate the semiconductor member from the support member. [7] A method for manufacturing a semiconductor device, comprising the steps of: preparing a temporary fixing laminate comprising a support member and a temporary fixing material layer made of a temporary fixing film or a cured product thereof as described in any of [1] to [4]; temporarily fixing a semiconductor member to the support member via the temporary fixing material layer; processing the semiconductor member that has been temporarily fixed to the support member; and separating the semiconductor member from the support member by irradiating the temporary fixing material layer of the temporary fixing laminate with light from the support member side.

[0009] According to the temporary fixing film described in [1] above, a temporary fixing material with excellent toughness can be formed by having the above configuration. The inventors speculate that the reason for this effect is as follows.

[0010] The temporary fixing film described in [1] above is prone to phase separation due to the combined use of a bismaleimide compound, epoxy resin, and a specific amount of filler. It is believed that the homopolymerization of the epoxy resin and the bismaleimide compound proceeds in the very low temperature range during thermal curing. This results in a cured film with an appropriate crosslinking density. If a flexible skeleton is incorporated into the bismaleimide compound, toughness can be more effectively imparted to the cured film, making it easier to peel off the semiconductor material in film form. However, if the specific amount of filler is absent, the crosslinking reaction of bismaleimide promoted by the epoxy resin becomes dominant in the low temperature range, resulting in an excessively high crosslinking density in the cured film. Therefore, even if the bismaleimide compound has a flexible skeleton, its influence on the elastic modulus of the cured product is reduced.

[0011] According to the present invention, it is possible to provide a temporary fixing film capable of forming a temporary fixing material having excellent toughness, as well as a temporary fixing laminate and a method for manufacturing a semiconductor device using the same.

[0012] Figure 1 is a schematic cross-sectional view showing one embodiment of a temporary fixing film. Figure 2 is a schematic cross-sectional view showing one embodiment of a temporary fixing laminate. Figures 3(a) and 3(b) are schematic cross-sectional views showing one embodiment of a method for manufacturing a temporary fixing laminate. Figures 4(a) and 4(b) are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device. Figures 5(a), 5(b), and 5(c) are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device. Figures 6(a) and 6(b) are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device.

[0013] Embodiments of the present disclosure will be described below with reference to the drawings as appropriate. However, the present disclosure is not limited to the following embodiments. In the following embodiments, the components (including steps, etc.) are not essential unless otherwise specified. The sizes of the components in each figure are conceptual, and the relative relationships of the sizes of the components are not limited to those shown in each figure.

[0014] The same applies to numerical values ​​and their ranges in this disclosure, and this disclosure is not limited. Numerical ranges indicated using “~” in this specification include the numerical values ​​before and after “~” as the minimum and maximum values, respectively. In numerical ranges described in stages in this specification, the upper or lower limit of one numerical range may be replaced by the upper or lower limit of another numerical range described in stages. Also, in numerical ranges described in this specification, the upper or lower limit of that numerical range may be replaced by the values ​​shown in the examples (manufacturing examples).

[0015] In this specification, the term "layer" includes not only structures that are formed across the entire surface when observed in a plan view, but also structures that are formed in only a part of the surface. Furthermore, in this specification, the term "process" includes not only independent processes, but also processes that cannot be clearly distinguished from other processes, as long as their intended function is achieved.

[0016] In this specification, (meth)acrylate means acrylate or the corresponding methacrylate. The same applies to other similar expressions such as (meth)acryloyl group and (meth)acrylic copolymer.

[0017] In this specification, unless otherwise specified, the materials exemplified below may be used individually or in combination of two or more, to the extent that the conditions are met. The content of each component refers to the total amount of multiple substances corresponding to each component, unless otherwise specified.

[0018] [Temporary Fixing Film] The temporary fixing film of this embodiment is used to temporarily fix a semiconductor member and a support member, and contains (A) a bismaleimide compound (hereinafter sometimes referred to as component (A)), (B) a thermosetting component (hereinafter sometimes referred to as component (B)), and (C) a filler (hereinafter sometimes referred to as component (C)), wherein component (B) contains (B-1) epoxy resin (hereinafter sometimes referred to as component (B-1)), and the content of component (C) is 10 parts by mass or more with respect to 100 parts by mass of the total of components (A) and (B-1).

[0019] Figure 1 is a schematic cross-sectional view showing one embodiment of a temporary fixing film. The temporary fixing film 1 shown in Figure 1 is composed of a resin composition layer 6 containing the components described above.

[0020] (A) As component, a compound having two maleimide groups and a predetermined structure sandwiched between these groups can be used.

[0021] Component (A) may have a functional group equivalent of maleimide groups of 500 to 100,000, 1,000 to 50,000, or 2,000 to 30,000. When the functional group equivalent is above the lower limit, it tends to facilitate the formation of a good quality film, and when it is below the upper limit, it tends to facilitate the prevention of seepage caused by viscosity reduction in each step.

[0022] Component (A) may have a weight-average molecular weight of 3,000 to 100,000, 5,000 to 60,000, or 10,000 to 50,000. When the weight-average molecular weight is above the lower limit, it tends to be easier to form a good quality film, and when it is below the upper limit, it tends to be easier to prevent leakage caused by viscosity reduction in each step. The weight-average molecular weight refers to the weight-average molecular weight measured using gel permeation chromatography (GPC) under the following conditions: Detector: Hitachi High-Tech Science L-2490-RI Column: Gelpack GL-R440 + R450 + R400M Flow rate: 1 ml / min Concentration: 5 mg / ml Injection volume: 200 μl Column temperature: 40°C Eluent: THF Standard sample: Polystyrene

[0023] (A) Component may have a Tg of 0 to 120°C, 10 to 100°C, or 30 to 80°C, from the viewpoint of low-temperature application and workability of the film. The above Tg is the glass transition temperature obtained by dynamic viscoelasticity measurement. Specifically, it is determined by measuring the storage modulus and loss modulus at temperatures from -50°C to 400°C under the conditions of heating temperature of 5°C / min and vibration frequency of 1 Hz, and calculating the value of the loss sine (loss modulus / storage modulus).

[0024] The component (A) may be, for example, a bismaleimide compound represented by the following general formula (1).

[0025] [In formula (1), R represents a divalent hydrocarbon group having 8 to 50 carbon atoms in the main chain, X represents a group represented by the following general formula (2), and n represents an integer of 1 or more. {In formula (2), Ar represents an aromatic ring having the carbon atoms at the 3- and 4-positions of two imide rings as part of the skeleton.}]

[0026] By having an imide skeleton and a specific hydrocarbon group in the main chain, the above bismaleimide compound can achieve both high-level low-temperature adhesion of the film and heat resistance and toughness of the temporary fixing material.

[0027] In the above general formula (2), Ar may be an aromatic ring having 5 to 50 carbon atoms, and may be an aromatic ring having 10 to 30 carbon atoms, from the viewpoint of achieving both heat resistance and flexibility.

[0028] In the above general formula (1), R may be an aliphatic group derived from a diamine compound described later. Also, from the viewpoints of flexibility and appropriate adhesion, R may be an aliphatic group derived from a dimer diamine.

[0029] The aliphatic group derived from the above dimer diamine may be a group represented by the following general formula (3).

[0030] [In formula (3), R １ and R ２ each independently represent a linear or branched monovalent hydrocarbon group, and L １ and L ２ each independently represent a linear or branched divalent hydrocarbon group. ]

[0031] R １ and R ２ may be a saturated hydrocarbon group or an unsaturated hydrocarbon group. R １ and R ２ may have 4 to 20 carbon atoms from the viewpoints of low-temperature adhesion of the film and improvement of toughness.

[0032] L １ and L ２may be a saturated hydrocarbon group or an unsaturated hydrocarbon group. L １ and L ２ From the viewpoint of low-temperature adhesion and toughness improvement of the film, the number of carbon atoms may be 4 to 20.

[0033] In the above general formula (1), n may be 1 to 20, or 3 to 8. When n is within the above range, it is easy to achieve both low-temperature adhesion and film strength (toughness) and heat resistance.

[0034] In the above general formula (1), the structural unit represented by (-X-R-) may be a block copolymer composed of block components in which the same structural units are continuously arranged, or a random copolymer in which different structural units are randomly arranged.

[0035] The bismaleimide compound represented by the above general formula (1) can be obtained, for example, by reacting a diamine compound with an aromatic acid anhydride to prepare an imide compound, and then reacting maleic anhydride with the functional group of this imide compound.

[0036] As the above diamine compound, an aliphatic diamine compound can be used. The aliphatic diamine compound may be used alone or in combination of two or more.

[0037] Examples of the aliphatic diamine compound include 1,10-diaminodecane, 1,12-diaminododecane, dimer diamine, 1,2-diamino-2-methylpropane, 1,2-diaminocyclohexane, 1,2-diaminopropane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 3,3'-diamino-N-methyldipropylamine, diaminomaleonitrile, 1,3-diaminopentane, bis(4-amino-3-methylcyclohexyl)methane, 1,2-bis(2-aminoethoxy)ethane, 3(4),8(9)-bis(aminomethyl)tricyclo(5.2.1.02,6)decane, etc.

[0038] Among the aliphatic diamine compounds mentioned above, dimer amines can be used from the viewpoint of improving flexibility and toughness. Dimer amines are diamine compounds obtained by reducing and aminating cyclic and acyclic dimer acids, which are obtained as dimers of unsaturated fatty acids.

[0039] Dimer amines may be linear, monocyclic, or polycyclic. Dimer amines may contain carbon-carbon unsaturated double bonds and may be hydrogenated products. Dimer amines may also be dimer amines capable of forming the group represented by the general formula (3) above.

[0040] Examples of the above aromatic acid anhydrides include pyromellitic acid, 1,2,5,6-naphthalenetetracarboxylic acid, 2,3,6,7-naphthalenetetracarboxylic acid, 1,2,4,5-naphthalenetetracarboxylic acid, 1,4,5,8-naphthalenetetracarboxylic acid, 3,3',4,4'-benzophenonetetracarboxylic acid, 3,3',4,4'-biphenylethertetracarboxylic acid, 3,3',4,4'-biphenyltetracarboxylic acid, and 2,3,5,6 -pyridinetetracarboxylic acid, 3,4,9,10-perylenetetracarboxylic acid, 4,4'-sulfonyl diphthalic acid, 1-trifluoromethyl-2,3,5,6-benzenetetracarboxylic acid, 2,2',3,3'-biphenyltetracarboxylic acid, 2,2-bis(3,4-dicarboxyphenyl)propane, 2,2-bis(2,3-dicarboxyphenyl)propane, 1,1-bis(2,3-dicarboxyphenyl)ethane, 1,1-bis(3,4- Dicarboxyphenyl)ethane, bis(2,3-dicarboxyphenyl)methane, bis(3,4-dicarboxyphenyl)methane, bis(3,4-dicarboxyphenyl)sulfone, bis(3,4-dicarboxyphenyl)ether, benzene-1,2,3,4-tetracarboxylic acid, 2,3,2',3'-benzophenonetetracarboxylic acid, 2,3,3',4'-benzophenonetetracarboxylic acid, phenanthrene-1,8,9,10-tetracarboxylic acid Examples include rubonic acid, pyrazine-2,3,5,6-tetracarboxylic acid, thiophene-2,3,4,5-tetracarboxylic acid, 2,3,3',4'-biphenyltetracarboxylic acid, 3,4,3',4'-biphenyltetracarboxylic acid, 2,3,2',3'-biphenyltetracarboxylic acid, 4,4'-bis(3,4-dicarboxyphenoxy)diphenyl sulfide, and 4,4'-(4,4'-isopropylidenediphenoxy)-bis(phthalic acid).

[0041] The content of component (A) in the temporary fixing film 1 may be 5 to 99% by mass, 30 to 95% by mass, or 50 to 90% by mass, based on the total amount of resin components (excluding fillers) in the temporary fixing film. When the content of component (A) is within the above range, it tends to be easier to produce a film with sufficient heat resistance and toughness and appropriate adhesion, and the effects of the present invention tend to be significantly realized.

[0042] The temporary fixing film 1 may contain thermoplastic resins other than component (A). Examples of other thermoplastic resins include acrylic rubber, hydrocarbon resins, polycarbonate, polyphenylene sulfide, polyethersulfone, polyetherimide, polyimide, petroleum resin, novolac resin, polyamideimide, phenolic resin, polyether, cycloolefin, and the like.

[0043] Component (B) refers to thermosetting components other than component (A) mentioned above.

[0044] (B-1) Component can be any compound having two or more epoxy groups in its molecule, and examples include alicyclic epoxy resins such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, biphenyl type epoxy resin, biphenyl novolac type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolac type epoxy resin, bisphenol F novolac type epoxy resin, dicyclopentadiene type epoxy resin, aliphatic chain epoxy resin, triphenylmethane type epoxy resin, glycidyl ester type epoxy resin, isocyanurate type epoxy resin, hydantoin type epoxy resin, glycidyl ether compounds of polyfunctional phenols, glycidyl ether compounds of difunctional alcohols, and hydrogenated versions thereof. (B) Component can be used alone or in combination of two or more.

[0045] Component (B-1) may have an epoxy equivalent of 100 to 3000 g / eq, 150 to 1000 g / eq, or 200 to 400 g / eq, from the viewpoint of facilitating the production of a high-quality film with sufficient heat resistance and flexibility (film toughness). The epoxy equivalent is determined by the method standardized in JIS standard (K7236:2001).

[0046] The temporary fixing film 1 may contain, from the viewpoint of achieving both heat resistance and flexibility, (B-1a) an epoxy resin having an alicyclic structure (hereinafter sometimes referred to as (B-1a) component) and (B-1b) an epoxy resin having an aromatic ring (hereinafter sometimes referred to as (B-1b) component).

[0047] (B-1a) Examples of component (B-1a) include dicyclopentadiene type epoxy resin, cyclohexyl type epoxy resin, epoxy resin containing an oxirane ring, etc.

[0048] (B-1b) Component includes polyfunctional epoxy resins such as triphenylmethane type epoxy resin, naphthalene type epoxy resin, biphenyl type epoxy resin, and fluorene type epoxy resin.

[0049] The ratio of component (B-1a) to component (B-1b) in the resin component of the temporary fixing film 1 may be 80 / 20 to 70 / 30 by mass ratio (B-1a) / (B-1b), or 60 / 40 to 40 / 60. In this case, the film tends to have heat resistance and flexibility while reducing tackiness and improving handling.

[0050] The content of component (B-1) in the temporary fixing film 1 may be 10% by mass or more, 20% by mass or more, or 100% by mass, based on the total amount of thermosetting resin contained in the temporary fixing film 1. When the content of component (B-1) is within the above range, it tends to be easier to achieve both the acceleration of curing of the bismaleimide compound and the curing of the epoxy resin itself, and the effects of the present invention tend to be significantly exhibited.

[0051] The ratio of the content of component (A) to the content of component (B-1) in the temporary fixing film 1 [(A) / (B-1)] may be 80 / 20 to 70 / 30 from the viewpoint of heat resistance and the production of a good quality film.

[0052] The total content of component (A) and component (B-1) in the temporary fixing film 1 may be 50% by mass or more, 70% by mass or more, or 90% by mass or more, based on the total amount of the temporary fixing film.

[0053] The temporary fixing film 1 may contain thermosetting resins other than component (B-1). Examples of other thermosetting resins include acrylic resin, silicone resin, phenolic resin, thermosetting polyimide resin, polyurethane resin, melamine resin, urea resin, styrene resin, vinyl benzyl, and the like.

[0054] The temporary fixing film 1 may further contain a curing accelerator that promotes the curing reaction of the thermosetting resin, such as component (B-1). Examples of curing accelerators include imidazole derivatives, dicyandiamide derivatives, dicarboxylic acid dihydrazides, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, and 1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate.

[0055] The content of the curing accelerator may be 0.01 to 5 parts by mass per 100 parts by mass of component (B-1). When the content of the curing accelerator is within this range, the curability of the thermosetting resin and the heat resistance after curing tend to be better. From the viewpoint of preventing a decrease in heat resistance and the generation of residue due to the remaining uncured and semi-cured components, the content of the curing accelerator may be 1.0 part by mass or more, 1.2 parts by mass or more, or 1.5 parts by mass or more, or 3.0 parts by mass or less, 2.5 parts by mass or less, or 2.0 parts by mass or less, based on the total amount of thermosetting resin.

[0056] Furthermore, the content of the curing accelerator may be 0.01 to 5% by mass, based on the total amount of thermosetting resin contained in the temporary fixing film 1. When the content of the curing accelerator is within this range, the curability of the thermosetting resin and the heat resistance after curing tend to be better. From the viewpoint of preventing a decrease in heat resistance and the generation of residue due to the remaining uncured and semi-cured components, the content of the curing accelerator may be 1.0% by mass or more, 1.2% by mass or more, or 1.5% by mass or more, or 3.0% by mass or less, 2.5% by mass or less, or 2.0% by mass or less, based on the total amount of thermosetting resin.

[0057] Examples of component (C) include nonmetallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, and ceramics. Component (C) may be particles whose surface has been treated with a surface treatment agent, from the viewpoint of dispersibility with the solvent. Component (C) may be treated with a silane coupling agent, for example, from the viewpoint of interaction, and may be modified with groups such as dimethyl, hexyl, phenyl, epoxy, phenylamino, methacrylic, isocyanate, and vinyl, from the viewpoint of dispersion and interaction with the resin. Component (C) may be epoxy or phenylamino modified, from the viewpoint of improving low-temperature adhesion.

[0058] Component (C) may be a silica filler, from the viewpoint of promoting crosslinking of component (B-1).

[0059] The average particle size of component (C) may be 0.05 to 5 μm or 0.1 to 0.6 μm from the viewpoint of uniform film production.

[0060] The content of component (C) is 10 parts by mass or more per 100 parts by mass of the total of components (A) and (B-1), from the viewpoint of forming a temporary fixing material with excellent toughness, and may be 15 parts by mass or more, 20 parts by mass or more, 30 parts by mass or more, or 50 parts by mass or more, and may be 100 parts by mass or less, from the viewpoint of further improving toughness without hindering the light transmission of the formed temporary fixing material.

[0061] The temporary fixing film 1 may contain a polymerization initiator. The polymerization initiator is not particularly limited as long as it initiates polymerization of component (A) by heating or irradiation with ultraviolet light or the like. The polymerization initiator can be used alone or in combination of two or more types.

[0062] Polymerization initiators can be compounds that generate free radicals, such as peroxides and azo compounds that decompose upon heating to generate free radicals. Examples of radical polymerization initiators include diacyl peroxides, peroxydicarbonates, peroxyesters, peroxyketals, dialkyl peroxides, and hydroperoxides.

[0063] Examples of diacyl peroxides include 2,4-dichlorobenzoyl peroxide, 3,5,5-trimethylhexanoyl peroxide, octanoyl peroxide, lauroyl peroxide, stearoyl peroxide, succinic peroxide, benzoyl peroxytoluene, and benzoyl peroxide.

[0064] Examples of peroxydicarbonates include di-n-propyl peroxydicarbonate, diisopropyl peroxydicarbonate, bis(4-t-butylcyclohexyl)peroxydicarbonate, di-2-ethoxymethoxyperoxydicarbonate, di(2-ethylhexylperoxy)dicarbonate, dimethoxybutyl peroxydicarbonate, and di(3-methyl-3-methoxybutylperoxy)dicarbonate.

[0065] Peroxyesters include 1,1,3,3-tetramethylbutyl peroxyneodecanoate, 1-cyclohexyl-1-methylethyl peroxyneodecanoate, t-hexyl peroxyneodecanoate, t-butyl peroxypivalate, 1,1,3,3-tetramethylbutyl peroxy-2-ethylhexanonate, 2,5-dimethyl-2,5-di(2-ethylhexanoylperoxy)hexane, 1-cyclohexyl-1-methylethyl peroxy-2-ethylhexanonate, t-hexyl peroxy-2-ethylhexanonate, and t-butyl peroxy Examples include c-2-ethylhexanonate, t-butyl peroxyisobutyrate, 1,1-bis(t-butylperoxy)cyclohexane, t-hexylperoxyisopropyl monocarbonate, t-butylperoxy-3,5,5-trimethylhexanonate, t-butylperoxylaurate, 2,5-dimethyl-2,5-di(m-toluylperoxy)hexane, t-butylperoxyisopropyl monocarbonate, t-butylperoxy-2-ethylhexyl monocarbonate, t-hexylperoxybenzoate, and t-butylperoxyacetate.

[0066] Examples of peroxyketals include 1,1-bis(t-hexylperoxy)-3,3,5-trimethylcyclohexane, 1,1-bis(t-hexylperoxy)cyclohexane, 1,1-bis(t-butylperoxy)-3,3,5-trimethylcyclohexane, 1,1-(t-butylperoxy)cyclododecane, and 2,2-bis(t-butylperoxy)decane.

[0067] Examples of dialkylperoxides include α,α'-bis(t-butylperoxy)diisopropylbenzene, dicumyl peroxide, 2,5-dimethyl-2,5-di(t-butylperoxy)hexane, and t-butylcumyl peroxide.

[0068] Examples of hydroperoxides include diisopropylbenzene hydroperoxide and cumene hydroperoxide.

[0069] The polymerization initiator may be present in an amount of 0.01 to 5 parts by mass, or 0.1 to 2 parts by mass, per 100 parts by mass of component (A).

[0070] The temporary fixing film 1 may further contain polymerizable monomers and polymerization initiators as polymerizable components other than component (A) described above. The polymerizable monomer is not particularly limited as long as it polymerizes by heating or irradiation with ultraviolet light or the like. From the viewpoint of material selectivity and ease of availability, the polymerizable monomer may be a compound having polymerizable functional groups such as ethylenically unsaturated groups. Examples of polymerizable monomers include (meth)acrylate, vinylidene halide, vinyl ether, vinyl ester, vinylpyridine, vinyl amide, aryl vinyl, etc. Among these, the polymerizable monomer may be (meth)acrylate. The (meth)acrylate may be monofunctional, difunctional, or trifunctional or more, but from the viewpoint of obtaining sufficient curability, it may be a (meth)acrylate with two or more functions.

[0071] The polymerizable monomer content may be 0 to 80 parts by mass per 100 parts by mass of component (A).

[0072] The temporary fixing film 1 may further contain additives such as sensitizers and antioxidants.

[0073] Examples of sensitizers include anthracene, phenanthrene, chrysene, benzopyrene, fluorantene, rubrene, pyrene, xanthon, indanthrene, thioxanthene-9-one, 2-isopropyl-9H-thioxanthene-9-one, 4-isopropyl-9H-thioxanthene-9-one, and 1-chloro-4-propoxythioxanthone.

[0074] The sensitizer content may be 0.01 to 10% by mass, based on the total amount of the temporary fixing film.

[0075] Examples of antioxidants include quinone derivatives such as benzoquinone and hydroquinone, phenol derivatives (hindered phenol derivatives) such as 4-methoxyphenol and 4-t-butylcatechol, aminooxyl derivatives such as 2,2,6,6-tetramethylpiperidine-1-oxyl and 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxyl, and hindered amine derivatives such as tetramethylpiperidyl methacrylate.

[0076] The antioxidant content may be 0.1 to 10% by mass, based on the total amount of the temporary fixing film. Within this range, sufficient effectiveness can be obtained while suppressing bleed-out.

[0077] The temporary fixing film 1 may further contain a conductor that absorbs light and generates heat. In this case, the temporary fixing material layer formed by the temporary fixing film or its cured product can be peeled off by light irradiation even if the light-absorbing layer described later is not laminated on it.

[0078] Examples of conductors constituting the conductive layer include metals, metal oxides, and conductive carbon materials. The metal may be a single element such as chromium, copper, titanium, silver, platinum, or gold, or it may be an alloy such as nickel-chromium, stainless steel, or copper-zinc. Examples of metal oxides include indium tin oxide (ITO), zinc oxide, and niobium oxide. The conductor may be chromium, titanium, or a conductive carbon material.

[0079] The conductive material content may be 0.01 to 50% by mass, 0.1 to 30% by mass, or 0.5 to 10% by mass, based on the total amount of the temporary fixing film.

[0080] The temporary fixing film 1 may exhibit a complex viscosity of 100 to 30,000 Pa·s at any temperature in the range of 20°C to 150°C, and may exhibit a complex viscosity of 1,000 to 30,000 Pa·s at 100°C.

[0081] [Method for Manufacturing Temporary Fixing Film] For example, to manufacture the temporary fixing film 1, first, each component (resin composition) constituting the temporary fixing film is dissolved or dispersed by stirring, mixing, kneading, etc., in a solvent to prepare a varnish of the resin composition. Then, the varnish of the resin composition is applied to a support film that has been treated with a mold release agent using a knife coater, roll coater, applicator, comma coater, die coater, etc., and the solvent is evaporated by heating to form a temporary fixing film (resin composition layer) made of the resin composition on the support film. At this time, the thickness of the temporary fixing film (resin composition layer) can be adjusted by adjusting the amount of varnish of the resin composition applied.

[0082] The solvent used in the preparation of the resin composition varnish is not particularly limited as long as it has the property of uniformly dissolving or dispersing each component. Examples of such solvents include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonate esters such as ethylene carbonate and propylene carbonate; and amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. The concentration of solid components in the varnish may be 10 to 80% by mass based on the total mass of the varnish.

[0083] The stirring, mixing, or kneading of the resin composition during the preparation of the varnish can be carried out using, for example, a stirrer, a sloshing machine, a three-roll mill, a ball mill, a bead mill, a homodisper, or the like.

[0084] Examples of support films include polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene; and films of polycarbonate, polyamide, polyimide, polyamideimide, polyetherimide, polyether sulfide, polyethersulfone, polyetherketone, polyphenylene ether, polyphenylene sulfide, poly(meth)acrylate, polysulfone, and liquid crystal polymer. The thickness of the support film may be, for example, 1 to 250 μm.

[0085] The heating conditions for volatilizing the solvent from the varnish of the resin composition coated onto the support film can be appropriately set according to the solvent used. For example, the heating conditions may be 40 to 180°C for 0.1 to 30 minutes.

[0086] The thickness of the temporary fixing film 1 may be, for example, 0.1 μm or more, 1 μm or more, or 5 μm or more, and may be 200 μm or less, 100 μm or less, or 70 μm or less, from the viewpoint of stress relaxation.

[0087] [Temporary Fixing Laminate and Method for Manufacturing the Same] The temporary fixing laminate of this embodiment is used to temporarily fix a semiconductor member and a support member. Figure 2 is a schematic cross-sectional view showing one embodiment of the temporary fixing laminate. The temporary fixing laminate 20 shown in Figure 2 has a support member 2, a light-absorbing layer 4, and a temporary fixing material layer 6c made of the temporary fixing film 1 (resin composition layer 6) of this embodiment or a cured product thereof (for example, a heated one), in this order from the support member 2. The temporary fixing material layer 6c has a surface S on the side where the semiconductor member is placed (opposite to the light-absorbing layer 4).

[0088] The support member 2 is a plate-like body with high transmittance that can withstand the loads applied during the processing of semiconductor components. Examples of support member 2 include inorganic glass substrates and transparent resin substrates. Furthermore, if light including infrared light is used during peeling, a silicon carrier substrate may be used.

[0089] The thickness of the support member 2 may be, for example, 0.1 to 2.0 mm. If the thickness of the support member 2 is 0.1 mm or more, handling tends to be easier. If the thickness of the support member 2 is 2.0 mm or less, material costs tend to be reduced.

[0090] The light-absorbing layer 4 is a layer that absorbs light and generates heat. The light-absorbing layer 4 may be, for example, a conductive layer containing a conductor that absorbs light and generates heat. The conductor constituting the conductive layer can be the same as the conductor that can be incorporated into the temporary fixing film described above. The light-absorbing layer 4 may be, for example, a conductive resin layer containing a conductor that absorbs light and generates heat and a resin.

[0091] The light-absorbing layer 4 may be a single or multiple metal layer, for example, a metal layer consisting of a copper layer and a titanium layer.

[0092] If the light-absorbing layer 4 is a single layer of metal, the light-absorbing layer 4 may contain at least one metal selected from the group consisting of tantalum (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), chromium (Cr), copper (Cu), aluminum (Al), silver (Ag), and gold (Au). These metals may be included in the light-absorbing layer 4 as an alloy.

[0093] The light-absorbing layer 4 is composed of two layers, a first layer and a second layer, and may be laminated in the order of the first layer and the second layer from the support member 2 side. In this case, for example, if the first layer has high light absorption and the second layer has a high coefficient of thermal expansion and a high modulus of elasticity, good peelability tends to be easily obtained. From this viewpoint, the first layer of the light-absorbing layer 4 may contain at least one metal selected from the group consisting of tantalum (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), and chromium (Cr), and the second layer of the light-absorbing layer 4 may contain at least one metal selected from the group consisting of copper (Cu), aluminum (Al), silver (Ag), and gold (Au). These metals may be included in the first and second layers as an alloy.

[0094] The thickness of the light-absorbing layer 4 may be 1 to 5000 nm, 100 to 3000 nm, or 50 to 300 nm from the viewpoint of easy peelability. If the light-absorbing layer 4 is a single layer or a metal layer consisting of multiple layers, the thickness of the light-absorbing layer 4 (or metal layer) may be 75 nm or more, 90 nm or more, or 100 nm or more, and may be 1000 nm or less, 800 nm or less, 500 nm or less, or 300 nm or less from the viewpoint of good peelability. If the light-absorbing layer 4 is a single layer metal layer, the thickness of the light-absorbing layer 4 (or metal layer) may be 100 nm or more, 125 nm or more, 150 nm or more, or 200 nm or more, and may be 1000 nm or less, 800 nm or less, or 500 nm or less from the viewpoint of good peelability. If the light-absorbing layer 4 is a conductor-containing resin layer, the thickness of the light-absorbing layer 4 may be 1 to 50 μm, 1 μm or more, 5 μm or more, or 10 μm or more, and 50 μm or less, 30 μm or less, or 20 μm or less.

[0095] The temporary fixing layer 6c consists of the temporary fixing film 1 (resin composition layer 6) of this embodiment or its cured product (for example, a heated product). The following describes the case where the temporary fixing layer 6c is a cured product.

[0096] Figures 3(a) and 3(b) are schematic cross-sectional views showing one embodiment of a method for manufacturing a temporary fixing laminate. The temporary fixing laminate 20 can be obtained, for example, by a method that includes the steps of: preparing a laminate precursor 10 having a support member 2, a light-absorbing layer 4, and a resin composition layer 6 of this embodiment in that order from the support member 2; and heating the laminate precursor 10 and heating the resin composition layer 6 to form a temporary fixing material layer 6c.

[0097] The laminated precursor 10 can be obtained, for example, by a method including the steps of providing a light-absorbing layer 4 on a support member 2 and attaching the temporary fixing film 1 of this embodiment to the light-absorbing layer 4 to form a resin composition layer 6. In this embodiment, a pre-cured (e.g., heated) temporary fixing film (temporary fixing material layer) may be attached. In this case, since the temporary fixing material layer has excellent toughness, workability can be improved in terms of cutting it to match the shape of the support member and peeling off the support film and bonding it.

[0098] The light-absorbing layer 4 can be formed on the support member 2 by physical vapor deposition (PVD) such as vacuum deposition or sputtering, or by chemical vapor deposition (CVD) such as plasma chemical deposition. Alternatively, the light-absorbing layer 4 can be formed on the support member 2 by electroplating or electroless plating. With physical vapor deposition, even if the support member 2 has a large surface area, the light-absorbing layer 4 covering the surface of the support member 2 can be efficiently formed.

[0099] Methods for attaching the temporary fixing film 1 to the light-absorbing layer 4 include, for example, roll lamination, vacuum lamination, and heat pressing. Lamination can be carried out, for example, under temperature conditions of 0 to 120°C.

[0100] Next, a temporary fixing layer 6c is formed by heating the resin composition layer 6 of the obtained laminated precursor 10. The heating conditions may be, for example, 150 to 300°C or 180 to 250°C for 1 to 180 minutes or 10 to 120 minutes. In this way, the temporary fixing layer 6c comes to contain cured products of components (A) and (B), and component (C).

[0101] The temporary fixing layer 6c has a surface tack force of 1 × 10 at 30°C on its surface S. －３ N (1.0 gf) or higher, 3 × 10 －３ N (1.0 gf) or higher, or 5 × 10 －２ The N (1.0 gf) or higher is acceptable. Surface tack can be increased by methods such as reducing the amount of filler or lowering the temperature when drying and removing the solvent.

[0102] To determine the surface tack force, prepare a test specimen similar to that used for the indentation test, and place the specimen on the 30°C stage of the probe tacking tester for 1 minute. Subsequently, the surface tack force can be determined using the probe tacking tester under the following measurement conditions.

[0103] (Measurement conditions) Probe: Made of SUS (stainless steel), 5 mm in diameter Push-in / pull-out speed: 600 mm / sec Push-in time: 1 second

[0104] The thickness of the temporary fixing material layer 6c may be, for example, 0.1 μm or more, 1 μm or more, or 5 μm or more, and may be 200 μm or less, 100 μm or less, or 70 μm or less, from the viewpoint of stress relaxation.

[0105] In this way, a temporary fixed laminate 20 can be obtained from the laminate precursor 10.

[0106] [Method for Manufacturing a Semiconductor Device] The method for manufacturing a semiconductor device according to this embodiment comprises the steps of: preparing the above-mentioned temporary fixing laminate (preparation step); temporarily fixing the semiconductor member to the support member via the light-absorbing layer and the temporary fixing material layer (temporary fixing step); processing the semiconductor member that has been temporarily fixed to the support member (processing step); and separating the semiconductor member from the support member by irradiating the light-absorbing layer of the temporary fixing laminate with light from the support member side (separation step). According to the method for manufacturing a semiconductor device according to this embodiment, since the above-mentioned temporary fixing laminate is used, the semiconductor member and the support member can be sufficiently fixed, and furthermore, the processed semiconductor member can be easily separated from the support member while suppressing the generation of residue.

[0107] (Preparation Step) Figures 4(a) and 4(b) are schematic cross-sectional views showing one embodiment of a semiconductor device manufacturing method. In the preparation step, the above-mentioned temporary fixing laminate 20 is prepared for temporarily fixing the semiconductor components to the support member while the semiconductor components are being processed for the manufacture of the semiconductor device (see Figure 4(a)). Here, we will describe the case where the temporary fixing material layer 6c is a cured product.

[0108] (Temporary Fixing Process) In the temporary fixing process, the semiconductor member 40 is temporarily fixed to the support member 2 via the light-absorbing layer 4 and the temporary fixing material layer 6c. The temporary fixing material layer 6c has a surface S opposite to the light-absorbing layer 4. In the temporary fixing process, for example, the semiconductor member 40 can be temporarily fixed to the support member 2 by pressing the semiconductor member 40 while it is placed on the temporary fixing material layer 6c (see Figure 4(b)). In other words, the semiconductor member 40 can be temporarily bonded to the support member 2 via the light-absorbing layer 4 and the temporary fixing material layer 6c. In this way, a laminate 30 is formed comprising a temporary fixing laminate 20 and a semiconductor member 40 provided on the temporary fixing material layer 6c of the temporary fixing laminate 20.

[0109] Examples of semiconductor members 40 include silicon wafers, and semiconductor substrates 42 and redistribution layers 44. When semiconductor members 40 have semiconductor substrates 42 and redistribution layers 44, semiconductor members 40 are temporarily fixed to the support member 2 via the light absorption layer 4 and the temporary fixing layer 6c, with the redistribution layer 44 facing the temporary fixing layer 6c side. Semiconductor members 40 may further have external connection terminals. The semiconductor substrate 42 may be a semiconductor wafer or a semiconductor chip obtained by dividing a semiconductor wafer. In the example of Figure 4(a), multiple semiconductor members 40 are arranged on the surface S of the temporary fixing layer 6c, but the number of semiconductor members 40 may be one. The thickness of the semiconductor member 40 may be 1 to 1000 μm, 10 to 500 μm, or 20 to 200 μm, in order to miniaturize and thin semiconductor devices, as well as to suppress cracking during transport and processing.

[0110] The semiconductor member 40 placed on the temporary fixing material layer 6c is pressed against the temporary fixing material layer 6c using, for example, a vacuum press, a vacuum laminator, or a wafer bonder. When using a vacuum press, the pressing conditions may be an atmospheric pressure of 1 hPa or less, a pressing pressure of 1 MPa, a pressing temperature of 120 to 200°C, and a holding time of 100 to 300 seconds. When using a vacuum laminator, the pressing conditions may be, for example, an atmospheric pressure of 1 hPa or less, a pressing temperature of 60 to 180°C or 80 to 150°C, a laminating pressure of 0.01 to 1.0 MPa or 0.1 to 0.7 MPa, and a holding time of 1 to 600 seconds or 30 to 300 seconds.

[0111] Furthermore, when using a temporary fixing laminate in which the temporary fixing layer is an uncured temporary fixing film, the temporary fixing layer may be heated after the semiconductor member is placed on the temporary fixing layer. Heating may be performed simultaneously with or after the bonding of the semiconductor member. The heating conditions may be, for example, 150 to 300°C or 180 to 250°C for 1 to 180 minutes or 10 to 120 minutes. In this way, the temporary fixing layer comes to contain cured products of components (A) and (B), and component (C).

[0112] (Processing Steps) Figures 5(a), 5(b), and 5(c) are schematic cross-sectional views showing one embodiment of a semiconductor device manufacturing method. In the processing steps, the semiconductor member 40, which is temporarily fixed to the support member 2, is processed. Figure 5(a) shows an example of processing including thinning of the semiconductor substrate, and the processed semiconductor member 40a has a thinned semiconductor substrate 42a and a redistribution layer 44. The processing of the semiconductor member is not limited to this and can include, for example, thinning of the semiconductor substrate, dicing of the semiconductor member, formation of through-electrodes (silicon through-electrodes), etching, plating reflow, sputtering, or a combination thereof. For example, in the wiring process (BEOL) in which elements formed on a wafer are joined together by metal wiring, heat resistance to high temperatures of 300 to 400°C is required.

[0113] After processing the semiconductor member 40, a sealing layer 50 is formed to seal the processed semiconductor member 40a, as shown in Figure 5(b). The sealing layer 50 can be formed using a sealing material commonly used for the manufacture of semiconductor devices. For example, the sealing layer 50 may be formed using a thermosetting resin composition. Examples of thermosetting resin compositions used for the sealing layer 50 include epoxy resins such as cresol novolac epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy resin, and naphthol novolac epoxy resin. The sealing layer 50 and the thermosetting resin composition for forming the sealing layer 50 may contain additives such as fillers and / or flame retardants.

[0114] The sealing layer 50 is formed using, for example, a solid material, a liquid material, a fine-grained material, or a sealing film. When a sealing film is used, a compression sealing molding machine, a vacuum laminating device, etc., are used. For example, the sealing layer 50 can be formed by covering the processed semiconductor member 40a with a sealing film that has been heat-melted at 40 to 180°C (or 60 to 150°C), 0.1 to 10 MPa (or 0.5 to 8 MPa) for 0.5 to 10 minutes using these devices. The thickness of the sealing film is adjusted so that the sealing layer 50 is greater than or equal to the thickness of the processed semiconductor member 40a. The thickness of the sealing film may be 50 to 2000 μm, 70 to 1500 μm, or 100 to 1000 μm.

[0115] After forming the sealing layer 50, the sealing layer 50 and the temporary fixing material layer 6c may be divided into multiple parts, each containing one processed semiconductor member 40a, as shown in Figure 5(c).

[0116] (Separation Process) Figures 6(a) and 6(b) are schematic cross-sectional views showing one embodiment of a semiconductor device manufacturing method. In the separation process, light is irradiated onto the light-absorbing layer of the temporary fixing laminate from the support member side, thereby separating the semiconductor member from the support member.

[0117] As shown in Figure 6(a), light A is irradiated onto the light-absorbing layer 4 of the temporary fixing laminate 20 from the support member 2 side to separate the processed semiconductor member 40a from the support member 2. Irradiation with light A causes the light-absorbing layer 4 to absorb light and instantaneously generate heat. The generated heat can cause, for example, melting, carbonization, or sublimation of the temporary fixing material layer 6c, thermal stress between the support member 2 and the processed semiconductor member 40a, and scattering of the light-absorbing layer 4. One or more of these phenomena are the main causes of cohesive delamination, interfacial delamination, etc., which can easily separate the processed semiconductor member 40a from the support member 2. In order to separate the processed semiconductor member 40a from the support member 2, a small amount of stress may be applied to the processed semiconductor member 40a along with the irradiation with light A.

[0118] Light A includes at least infrared light. The wavelength of infrared light is typically between 700 nm and 1 mm.

[0119] Light A in the separation process may be coherent light. Coherent light is an electromagnetic wave that has properties such as high coherence, high directivity, and high monochromaticity. Coherent light tends to have high intensity because light of the same wavelength and phase reinforces and combines with each other. Laser light is generally coherent light. Examples of laser light include YAG lasers, fiber lasers, semiconductor lasers, helium-neon lasers, argon lasers, and excimer lasers. The wavelength of the laser light may be 1300 nm or less. By having a wavelength of 1300 nm or less, the light absorption of the support member 2 is suppressed and the light absorption of the metal layer 12 is increased, making it possible to peel off with lower light irradiation energy. Coherent light may also be pulsed light.

[0120] Light A in the separation process may be incoherent light. Incoherent light is non-coherent light, and is an electromagnetic wave that has properties such as not generating interference fringes, low coherence, and low directivity. Incoherent light tends to attenuate as the optical path length increases. Light such as sunlight and fluorescent light is incoherent light. Incoherent light can also be defined as light excluding laser light. The irradiation area of ​​incoherent light is generally overwhelmingly larger than that of coherent light (i.e., laser light), so it is possible to reduce the number of irradiations. For example, a single irradiation can cause separation of multiple processed semiconductor components 40a. Incoherent light may include infrared light. Incoherent light may also be pulsed light.

[0121] The light source is not particularly limited, but it may be a xenon lamp. A xenon lamp is a lamp that utilizes light emission by applying and discharging a discharge tube filled with xenon gas. Because a xenon lamp discharges while repeatedly ionizing and exciting, it stably has a continuous wavelength range from the ultraviolet to the infrared region. Compared to lamps such as metal halide lamps, xenon lamps have a shorter start-up time, which can significantly reduce the time required for the process. In addition, although high heat is instantaneously generated because a high voltage is applied for light emission, xenon lamps are advantageous because they have a short cooling time and allow for continuous operation.

[0122] The irradiation conditions for the xenon lamp include the applied voltage, pulse width, irradiation time, irradiation distance (distance between the light source and the temporary fixing material layer), and irradiation energy, and these can be arbitrarily set according to the number of irradiations, etc. From the viewpoint of reducing damage to the semiconductor member 40a after processing, irradiation conditions that can separate the semiconductor member 40a after processing in a single irradiation may be set.

[0123] Furthermore, light A may be infrared laser light. The wavelength of the infrared laser light may be any wavelength in the range of 780 nm to 16 μm, for example, 1.908 μm, 1.950 μm, 2.004 μm, 9.3 μm, 10.2 μm, or 10.6 μm. As the light source for light A, gaseous carbon dioxide (CO2) may be used. ２ CO2 laser (CO2) is a medium used in carbon dioxide lasers. ２ Gas lasers, fiber lasers, semiconductor lasers, and YAG lasers can be used.

[0124] In the separation process, infrared laser light may be continuously irradiated, or pulsed irradiation may be performed in sequence. In this case, the irradiation energy of each pulse may be, for example, 1 to 50 mJ, 1 to 30 mJ, or 5 to 15 mJ. The pulse speed (frequency) may be, for example, 5 to 10,000 pulses / second, 10 to 1,000 pulses / second, or 50 to 300 pulses / second.

[0125] Also, CO ２When using a gas laser, light irradiation may be performed under the following conditions: Wavelength: 9.4 μm or 10.6 μm Frequency: 50 to 300 Hz Output: 0.2 to 2 W Focused spot diameter φ: 100 to 500 μm Scan speed: 2 to 12 mm / second Irradiation waveform: Gaussian, pulsed

[0126] A portion of the temporary fixing material layer 6c may adhere to the separated processed semiconductor member 40a as residue. The adhered residue is removed as shown in Figure 6(b). The adhered residue may be removed, for example, by washing with a solvent or by peeling. The solvent is not particularly limited, but examples include ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, hexane, etc. These may be used individually or in combination of two or more. To remove the adhered residue, the processed semiconductor member 40a may be immersed in the solvent or ultrasonic cleaning may be performed. The processed semiconductor member 40a may also be heated at a low temperature of about 100°C or below. In particular, since the temporary fixing material layer has excellent toughness, peeling can improve workability.

[0127] By the methods exemplified above, a semiconductor element 60 comprising the processed semiconductor member 40a can be obtained. A semiconductor device can be manufactured by connecting the obtained semiconductor element 60 to another semiconductor chip or a substrate for mounting semiconductor elements.

[0128] Various modifications can be made to the embodiments described above. If the temporary fixing film contains a conductor that absorbs light and generates heat, the temporary fixing laminate may not have a light-absorbing layer.

[0129] In this case, the method for manufacturing a semiconductor device may include the steps of: a) preparing a temporary fixing laminate comprising a support member and a temporary fixing material layer made of the temporary fixing film of this embodiment or a cured product thereof; b) temporarily fixing a semiconductor member to the support member via the temporary fixing material layer; c) processing the semiconductor member that has been temporarily fixed to the support member; and d) separating the semiconductor member from the support member by irradiating the temporary fixing material layer of the temporary fixing laminate with light from the support member side.

[0130] In steps a and b, an unheated laminated precursor may be used as a temporary fixing laminate. In this case, the semiconductor member may be temporarily fixed by placing the semiconductor member on a temporary fixing film (uncured temporary fixing layer) provided on a support member, and then heating the temporary fixing film (uncured temporary fixing layer).

[0131] For example, after bonding the temporary fixing film of this embodiment onto a silicon carrier substrate, a semiconductor component such as a silicon wafer may be temporarily fixed to the silicon carrier substrate via a temporary fixing layer consisting of the temporary fixing film or its cured product.

[0132] In step d, infrared laser light can be used as the light source. In this case, the temporary fixing layer may contain a conductor such as the conductive carbon material mentioned above so that it can be peeled off by laser irradiation.

[0133] The present invention will be described in more detail below with reference to examples (manufacturing examples). However, the present invention is not limited to these examples (manufacturing examples).

[0134] <Preparation of temporary fixing film> The following components were used in the preparation of the temporary fixing film.

[0135] (A) Bismaleimide compound (A1) Bismaleimide resin represented by the following formula (UMI-T2, manufactured by Unitika Ltd., Tg: 40°C, weight-average molecular weight: 5000)

[0136]

[0137] (B) Thermosetting components (B-1) Epoxy resin (B1a) Dicyclopentadiene type epoxy resin (HP7200H, manufactured by DIC Corporation), used as a xylene solution (B1b) Triphenylmethane type epoxy resin (1032, manufactured by Mitsubishi Chemical Corporation), used as a xylene solution

[0138] (B-2) Curing accelerator (B2a) Imidazole derivative (2PZ-CN, manufactured by Shikoku Chemicals Co., Ltd.), used as a 10% by mass xylene solution

[0139] (C) Fillers (C1) Silica filler (SC2050-KNK, manufactured by Admatex Co., Ltd., average particle size: 0.5 μm, phenylamine modified) (C2) Silica filler (SC2050-MB, manufactured by Admatex Co., Ltd., average particle size: 0.5 μm, epoxy group modified) (C3) Silica filler (5 SP-CM2, manufactured by Admatex Co., Ltd., average particle size: 0.5 μm, phenyl group modified)

[0140] (D) Initiator (D1) Dicumyl peroxide (Percumyl D, manufactured by NOF Corporation)

[0141] (Examples 1-4, Comparative Examples 1-2) The materials shown in Table 1 were mixed in the proportions shown in Table 1 (unit: parts by mass; the values ​​in Table 1 represent the non-volatile content) to obtain a resin composition varnish. The obtained resin composition varnish was applied to the release surface of a polyethylene terephthalate (PET) film (Purex A31, manufactured by Toyobo Film Solutions Co., Ltd., thickness: 38 μm) as a support film using a precision coating machine. The coating film was dried by heating at 120°C for 10 minutes to obtain a temporary fixing film with a thickness of 50 μm.

[0142] <Evaluation of the temporary fixing layer> 1. The temporary fixing films of the example and comparative example were heated in a dryer at 200°C for 2 hours to form a temporary fixing layer. The temporary fixing layer was then processed into a test piece with a width of 10 mm and a length of 80 mm, and the breaking strength was measured using a rheometer (EZ-Test, manufactured by Shimadzu Corporation) under the conditions of a chuck distance of 20 mm and a tensile speed of 50 mm / min.

[0143] 2. Thermogravimetric Analysis The temporary fixing films of the examples and comparative examples were heated in a dryer at 200°C for 2 hours to form a temporary fixing material layer. Then, using a differential thermogravimetric analysis device (STA7300, manufactured by Hitachi High-Tech Science Co., Ltd.), the temperature (Td5) at which the mass of the temporary fixing material layer decreased by 5 mass from the initial mass during the heating process in an airflow at a heating rate of 10°C / min was measured.

[0144] 3. The complex viscosity of the temporary fixing films of the low-temperature adhesive examples and comparative examples was measured using a rheometer (ARES-G2, TA Instruments Inc.) during the heating process at a heating rate of 10°C / min. The complex viscosity at 100°C is shown in the table. On the other hand, the temporary fixing films of the examples and comparative examples were laminated to inorganic glass substrates to prepare laminate precursors. A silicon wafer, as a semiconductor component, was laminated onto the temporary fixing material layer made of the temporary fixing film of the laminate precursor using a vacuum pressure laminator under the conditions of a temperature of 110°C, a pressure of 0.1 MPa, and a pressurizing time of 60 seconds. At this time, those that could be laminated without voids and showed no appearance defects were designated as "A". Voids occurred under the above lamination conditions, but when the conditions were changed to a temperature of 110°C, a pressure of 0.2 MPa, and a pressurizing time of 60 seconds, those that could be laminated without voids and showed no appearance defects were designated as "B". Materials that exhibited surface defects such as voids even when bonded under the conditions of a temperature of 110°C, a pressure of 0.2 MPa, and a pressurization time of 60 seconds were classified as "C".

[0145]

[0146] 1...Film for temporary fixing, 2...Support member, 4...Light absorbing layer, 6...Resin composition layer, 6c...Temporary fixing material layer, 10...Laminate precursor, 20...Laminate for temporary fixing, 30...Laminate, 40...Semiconductor member, 40a...Processed semiconductor member, 42...Semiconductor substrate, 42a...Thinned semiconductor substrate, 44...Redistribution layer, 50...Sealing layer, 60...Semiconductor element.

Claims

1. A temporary fixing film used for temporarily fixing a semiconductor member and a support member, comprising: (A) a bismaleimide compound; (B) a thermosetting component; and (C) a filler, wherein the (B) component comprises (B-1) epoxy resin, and the content of the (C) component is 10 parts by mass or more with respect to 100 parts by mass of the total of the (A) component and the (B-1) component.

2. The temporary fixing film according to claim 1, wherein component (C) is a silica filler.

3. The temporary fixing film according to claim 1, wherein the component (A) is a bismaleimide compound represented by the following general formula (1). [In formula (1), R represents a divalent hydrocarbon group having 8 to 50 carbon atoms in the main chain, X represents a group represented by the following general formula (2), and n represents an integer of 1 or more. {In formula (2), Ar represents an aromatic ring whose skeleton is formed from the carbon atoms at positions 3 and 4 of the two imide rings.} 4. The temporary fixing film according to claim 1, wherein the (B-1) component comprises an epoxy resin having an alicyclic structure and an epoxy resin having an aromatic ring.

5. A temporary fixing laminate comprising a support member, a light-absorbing layer, and a temporary fixing material layer in this order, wherein the temporary fixing material layer is made of a temporary fixing film or a cured product thereof as described in any one of claims 1 to 4.

6. A method for manufacturing a semiconductor device, comprising the steps of: preparing a temporary fixing laminate according to claim 5; temporarily fixing a semiconductor member to a support member via the temporary fixing material layer; processing the semiconductor member temporarily fixed to the support member; and irradiating the light-absorbing layer of the temporary fixing laminate with light from the support member side to separate the semiconductor member from the support member.

7. A method for manufacturing a semiconductor device, comprising: preparing a temporary fixing laminate comprising a support member and a temporary fixing material layer made of a temporary fixing film or a cured product thereof as described in any one of claims 1 to 4; temporarily fixing a semiconductor member to the support member via the temporary fixing material layer; processing the semiconductor member that has been temporarily fixed to the support member; and separating the semiconductor member from the support member by irradiating the temporary fixing material layer of the temporary fixing laminate with light from the support member side.

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