Light detection device and electronic device

Abstract

A light detection device according to one embodiment of the present disclosure comprises: an optical layer that has a plurality of structures; a semiconductor layer; a first pixel that includes a first photoelectric conversion element which is provided to the semiconductor layer, and a first filter which is provided between the optical layer and the first photoelectric conversion element and which transmits light in a first wavelength region; a second pixel that includes a second photoelectric conversion element which is provided to the semiconductor layer, and a second filter which is provided between the optical layer and the second photoelectric conversion element and which transmits light in a second wavelength region; a first spacer that is provided between the optical layer and the first filter; and a second spacer which is provided between the optical layer and the second filter.

Description

Optical Detection Device and Electronic Device

[0007]

[0001] The present disclosure relates to an optical detection device and an electronic device.

[0002] A device has been proposed that has a high refractive index transparent part which is a spectroscopic element for separating incident light into each color and detects light (Patent Document 1).

[0003] Japanese Unexamined Patent Application Publication No. 2012 - 15424

[0004] In an optical detection device, it is desirable to be able to improve the sensitivity to incident light.

[0005] It is desired to provide an optical detection device capable of improving sensitivity.

[0006] The optical detection device according to an embodiment of the present disclosure includes a first pixel including an optical layer having a plurality of structures, a semiconductor layer, a first photoelectric conversion element provided on the semiconductor layer, and a first filter provided between the optical layer and the first photoelectric conversion element and transmitting light in a first wavelength range; a second photoelectric conversion element provided on the semiconductor layer; a second pixel including a second filter provided between the optical layer and the second photoelectric conversion element and transmitting light in a second wavelength range; a first spacer provided between the optical layer and the first filter; and a second spacer provided between the optical layer and the second filter. The electronic device according to an embodiment of the present disclosure includes an optical system and an optical detection device that receives light transmitted through the optical system. The optical detection device has an optical layer having a plurality of structures, a semiconductor layer, a first pixel including a first photoelectric conversion element provided on the semiconductor layer and a first filter provided between the optical layer and the first photoelectric conversion element and transmitting light in a first wavelength range, a second photoelectric conversion element provided on the semiconductor layer, a second pixel including a second filter provided between the optical layer and the second photoelectric conversion element and transmitting light in a second wavelength range, a first spacer provided between the optical layer and the first filter, and a second spacer provided between the optical layer and the second filter.

[0007] Figure 1 is a block diagram showing an example of the schematic configuration of an imaging device, which is an example of a photodetector according to the first embodiment of this disclosure. Figure 2 is a diagram showing an example of the pixel section of an imaging device according to the first embodiment of this disclosure. Figure 3 is a diagram showing an example of the circuit configuration of a pixel in an imaging device according to the first embodiment of this disclosure. Figure 4A is a diagram illustrating an example of the planar configuration of an imaging device according to the first embodiment of this disclosure. Figure 4B is a diagram illustrating an example of the planar configuration of an imaging device according to the first embodiment of this disclosure. Figure 5 is a diagram showing an example of the cross-sectional configuration of an imaging device according to the first embodiment of this disclosure. Figure 6A is a diagram illustrating an example of the configuration of an imaging device according to the first embodiment of this disclosure. Figure 6B is a diagram illustrating an example of the configuration of an imaging device according to the first embodiment of this disclosure. Figure 6C is a diagram illustrating an example of the configuration of an imaging device according to the first embodiment of this disclosure. Figure 7 is a diagram illustrating an example of the configuration of an imaging device according to the first embodiment of this disclosure. Figure 8 is a diagram illustrating an example of the configuration of an imaging device according to the first embodiment of this disclosure. Figure 9 is a diagram showing an example of the configuration of an imaging device according to a comparative example of this disclosure. Figure 10 is a diagram illustrating an example configuration of an imaging device according to a comparative example of the present disclosure. Figure 11 is a diagram illustrating an example configuration of an imaging device according to the first embodiment of the present disclosure. Figure 12 is a diagram illustrating another example configuration of an imaging device according to the first embodiment of the present disclosure. Figure 13 is a diagram illustrating an example of transmittance in a pixel of an imaging device according to the first embodiment of the present disclosure. Figure 14 is a diagram illustrating an example configuration of an imaging device according to the first embodiment of the present disclosure. Figure 15 is a diagram illustrating an example configuration of an imaging device according to the first embodiment of the present disclosure. Figure 16 is a diagram illustrating an example configuration of an imaging device according to Modification 1 of the present disclosure. Figure 17 is a diagram illustrating an example configuration of an imaging device according to Modification 1 of the present disclosure. Figure 18 is a diagram illustrating an example configuration of an imaging device according to Modification 2 of the present disclosure. Figure 19 is a diagram illustrating an example configuration of an imaging device according to the second embodiment of the present disclosure. Figure 20 is a diagram illustrating an example configuration of an imaging device according to the second embodiment of the present disclosure. Figure 21 is a diagram illustrating an example configuration of an imaging device according to the second embodiment of the present disclosure.Figure 22 is a diagram illustrating an example configuration of an imaging device according to Modification 3 of the present disclosure. Figure 23 is a diagram illustrating an example configuration of an imaging device according to Modification 3 of the present disclosure. Figure 24 is a diagram illustrating an example configuration of an imaging device according to Modification 4 of the present disclosure. Figure 25 is a diagram illustrating an example configuration of an imaging device according to Modification 4 of the present disclosure. Figure 26 is a diagram illustrating an example configuration of an imaging device according to the third embodiment of the present disclosure. Figure 27 is a diagram illustrating an example configuration of an imaging device according to the third embodiment of the present disclosure. Figure 28 is a diagram illustrating an example configuration of an imaging device according to the third embodiment of the present disclosure. Figure 29 is a diagram illustrating an example configuration of an imaging device according to the third embodiment of the present disclosure. Figure 30 is a diagram illustrating an example configuration of an imaging device according to Modification 5 of the present disclosure. Figure 31 is a diagram illustrating an example configuration of an imaging device according to Modification 5 of the present disclosure. Figure 32 is a block diagram showing an example configuration of an electronic device having an imaging device. Figure 33 is a block diagram showing an example of a schematic configuration of a vehicle control system. Figure 34 is an explanatory diagram showing an example of the installation positions of the external information detection unit and the imaging unit. Figure 35 is a diagram showing an example of a schematic configuration of an endoscopic surgical system. Figure 36 is a block diagram showing an example of the functional configuration of a camera head and a CCU.

[0008] The embodiments of this disclosure will be described in detail below with reference to the drawings. The description will be in the following order: 1. First Embodiment 2. Second Embodiment 3. Third Embodiment 4. Application Example 5. Application Example

[0009] <1. First Embodiment> Figure 1 is a block diagram showing an example of the schematic configuration of an imaging device, which is an example of a photodetector according to the first embodiment of the present disclosure. Figure 2 is a diagram showing an example of the pixel section of an imaging device according to the first embodiment. A photodetector is a device capable of detecting incident light. An imaging device 1, which is an example of a photodetector, has a plurality of pixels P including a photoelectric conversion unit, and is configured to generate a signal by photoelectric conversion of incident light.

[0010] The imaging device 1 is configured using, for example, a substrate (such as a silicon (Si) substrate or a silicon on insulator (SOI) substrate) on which a photoelectric conversion unit for each pixel P is provided. The imaging device 1 receives light transmitted through an optical system (not shown) and generates a signal. The imaging device 1 may have a structure (i.e., a laminated structure) composed of multiple substrates (or semiconductor layers) stacked on top of each other.

[0011] The imaging device 1 has a region (pixel section 100) where a plurality of pixels P are provided, as shown in the example in Figure 1 or Figure 2. The imaging device 1 has, for example, a pixel section 100 in which a plurality of pixels P are arranged in a matrix in two dimensions as an imaging area. The photoelectric conversion section of each pixel P is a photoelectric conversion element, and can also be called a photoelectric conversion region. The photoelectric conversion section of the pixel P is, for example, a photodiode (PD), and is configured to convert light into photoelectric energy.

[0012] The imaging device 1 captures incident light (image light) from the subject to be measured, for example, through an optical system including an optical lens and an aperture (diaphragm). The imaging device 1 captures an image of the subject formed by the optical system. The imaging device 1 generates a pixel signal by photoelectric conversion of the received light (e.g., visible light, infrared light, etc.). The imaging device 1, being a light detection device, is a device capable of receiving light and generating a signal, and can also be called a light receiving device.

[0013] The imaging device 1 (light detection device) is configured as an image sensor, for example. For instance, the imaging device 1 may be a CMOS (Complementary Metal Oxide Semiconductor) image sensor, a CCD (Charge Coupled Device) image sensor, etc. The imaging device 1 can be used in various electronic devices such as digital still cameras, video cameras, and mobile phones.

[0014] As shown in Figure 2, the direction of incidence of light from the subject being measured is defined as the Z-axis direction, the left-right direction perpendicular to the Z-axis direction is defined as the X-axis direction, and the up-down direction perpendicular to both the Z-axis and X-axis directions is defined as the Y-axis direction. In subsequent figures, directions may also be indicated based on the direction of the arrows in Figure 2.

[0015] [Outline Configuration of the Imaging Device] The imaging device 1, as shown in the example in Figure 1, includes a pixel section 100, a pixel control unit 111, a signal processing unit 112, a control unit 113, and a processing unit 114. The imaging device 1 also includes, for example, a plurality of control lines Lc and a plurality of signal lines Ls. The pixel section 100 is a pixel array in which a plurality of pixels P are arranged. The number and arrangement of pixels P provided in the pixel section 100 (i.e., the pixel array) can be changed as appropriate.

[0016] The control line Lc is a signal line capable of transmitting signals to control the pixel P, and is connected to the pixel control unit 111 and the pixel P of the pixel unit 100. The control line Lc is configured to transmit, for example, a control signal for reading signals from the pixel P. In the example shown in Figure 1, multiple control lines Lc are wired to each pixel row of the pixel unit 100, which is composed of multiple pixels P arranged horizontally (in the row direction).

[0017] The multiple control lines Lc for each pixel row of the imaging device 1 include, for example, wiring that transmits signals to control the transfer transistor, wiring that transmits signals to control the selection transistor, wiring that transmits signals to control the reset transistor, wiring that transmits signals to control the switching transistor, etc. The control lines Lc can also be called drive lines (or pixel drive lines) that transmit signals to drive the pixels P.

[0018] The signal line Ls is a signal line capable of transmitting signals from the pixel P, and is connected to the pixel P of the pixel unit 100 and the signal processing unit 112. The signal line Ls is electrically connected to the pixel P and is configured to transmit signals output from the pixel P. For example, in the pixel unit 100, a signal line Ls is wired for each pixel column, which is composed of multiple pixels P arranged vertically (in the column direction).

[0019] In the pixel section 100 of the imaging device 1, multiple signal lines Ls may be provided for a single pixel row. For example, the imaging device 1 has multiple signal lines Ls for each pixel row containing multiple pixels P. The number and arrangement of control lines Lc and signal lines Ls provided in the imaging device 1 are not limited to the illustrated example and can be changed as appropriate.

[0020] The pixel control unit 111 is configured to control each pixel P. The pixel control unit 111 is a control circuit (pixel control circuit) and is composed of multiple circuits, such as a buffer, a shift register, and an address decoder. The pixel control unit 111 generates a signal for controlling the pixels P and outputs it to each pixel P of the pixel unit 100 via a control line Lc. The pixel control unit 111 is controlled, for example, by the control unit 113, and controls each pixel P of the pixel unit 100.

[0021] The pixel control unit 111 generates signals for controlling pixels P (signals to control the transfer transistor of pixel P, signals to control the selection transistor, signals to control the reset transistor, signals to control the switching transistor, etc.) and supplies them to each pixel P via the control line Lc. The pixel control unit 111 can perform control to read out pixel signals from each pixel P. The pixel control unit 111 can also be described as a pixel drive unit (pixel drive circuit) configured to drive each pixel P.

[0022] The signal processing unit 112 is configured to perform signal processing on the input pixel signal. The signal processing unit 112 is a signal processing circuit and includes, for example, a load circuit, an AD (Analog Digital) conversion circuit, a horizontal selection switch, etc. The load circuit is, for example, composed of a current source capable of supplying current to the amplification transistor of the pixel P, and together with the amplification transistor of the pixel P, it forms a source follower circuit.

[0023] The load circuit and AD conversion circuit of the signal processing unit 112 are provided, for example, for each of the multiple signal lines Ls. The signal processing unit 112 may also have an amplification circuit configured to amplify the signal read from the pixel P via the signal line Ls. As an example, a load circuit, an amplification circuit, and an AD conversion circuit are provided for each pixel row of the pixel unit 100.

[0024] The signals output from each pixel P selected and scanned by the pixel control unit 111 are input to the signal processing unit 112 via the signal line Ls. The signal processing unit 112 performs signal processing such as AD conversion and CDS (Correlated Double Sampling) of the pixel P signals. The signals from each pixel P transmitted via each signal line Ls are processed by the signal processing unit 112 and output to the processing unit 114.

[0025] The processing unit 114 is configured to acquire signals from each pixel P and perform signal processing. The processing unit 114 is a processing circuit and is composed of, for example, circuits that perform various signal processing on the input pixel signals. The processing unit 114 (processing circuit) is composed of, for example, an arithmetic circuit, a memory circuit, an I / F (interface) circuit, etc.

[0026] The processing unit 114 is configured to perform various signal processing operations, such as noise reduction, interpolation, and gradation correction. For example, the processing unit 114 can perform signal processing on the pixel signal input from the signal processing unit 112 and output the processed pixel signal. The processing unit 114 may also include a processor and memory.

[0027] The control unit 113 is configured to control each part of the imaging device 1. The control unit 113 is a control circuit and includes, for example, a PLL (Phase Locked Loop), a timing generator, a DAC (Digital to Analog Converter), etc. As an example, the control unit 113 can receive a clock and data commanding the operating mode from an external source, and can also output data such as internal information of the imaging device 1.

[0028] The control unit 113 includes, for example, a timing generator configured to generate various timing signals. Based on the various timing signals (pulse signals, clock signals, etc.) generated by the timing generator, the control unit 113 performs drive control for the pixel control unit 111 and the signal processing unit 112, etc. Note that the control unit 113 and the processing unit 114 may be configured as an integrated unit.

[0029] The pixel unit 100, pixel control unit 111, signal processing unit 112, control unit 113, processing unit 114, etc., described above may be provided on a single substrate or on multiple substrates. The imaging device 1 may have a laminated structure formed by stacking multiple substrates (for example, two or more semiconductor substrates).

[0030] The pixel control unit 111, signal processing unit 112, control unit 113, processing unit 114, etc. of the imaging device 1 may be provided, for example, as peripheral circuits in the peripheral area of ​​the pixel unit 100. Note that some or all of the signal processing unit 112, control unit 113, and processing unit 114 may be configured as a single unit.

[0031] [Pixel Configuration] Figure 3 shows an example of the circuit configuration of a pixel in an imaging device according to the first embodiment. A pixel P includes, for example, a photoelectric conversion unit 12, a transistor TRG, a floating diffusion FD, and a readout circuit 15. The photoelectric conversion unit 12 (photoelectric conversion element) is configured to receive light and generate a signal. The readout circuit 15 is configured to output a signal based on the photoelectrically converted charge.

[0032] The photoelectric conversion unit 12 is configured to generate electric charge through photoelectric conversion. In the example shown in Figure 3, the photoelectric conversion unit 12 is a photodiode (PD) that converts incident light into electric charge. The photoelectric conversion unit 12 performs photoelectric conversion to generate an electric charge corresponding to the amount of light received. The photoelectric conversion unit 12 is a photoelectric conversion element and can also be called a light receiving element.

[0033] The transistor TRG is configured to transfer the charge photoelectrically converted in the photoelectric conversion unit 12 to the floating diffusion FD. The transistor TRG is a transfer transistor. The transistor TRG is controlled by the signal STRG and electrically connects or disconnects the photoelectric conversion unit 12 and the floating diffusion FD. The transistor TRG (i.e., the transfer transistor) can transfer the charge converted and stored in the photoelectric conversion unit 12 to the floating diffusion FD.

[0034] The floating diffusion FD is a storage unit and is configured to store the transferred charge. The floating diffusion FD can store the charge photoelectrically converted by the photoelectric conversion unit 12. The floating diffusion FD stores the transferred charge and converts it into a voltage corresponding to the capacitance of the floating diffusion FD. The floating diffusion FD can also be described as a storage unit capable of holding charge.

[0035] The readout circuit 15 is configured to read out pixel signals based on the charge photoelectrically converted by the photoelectric conversion unit 12. The readout circuit 15 includes, as an example, a transistor AMP, a transistor SEL, and a transistor RST. The readout circuit 15 may also include a floating diffusion FD. The readout circuit 15 may also include a transistor TRG.

[0036] The transistor AMP is configured to generate and output a signal based on the charge stored in the floating diffusion FD. The transistor AMP is an amplifying transistor. The transistor AMP (i.e., the amplifying transistor) can generate and output a signal based on the charge converted by the photoelectric conversion unit 12.

[0037] The gate of the transistor AMP is electrically connected to the floating diffusion diode (FD), and the voltage converted by the floating diffusion diode is input to it. The drain of the transistor AMP is connected to a power line that supplies, for example, the power supply voltage (the power supply voltage VDD in the example shown in Figure 3).

[0038] The source of the transistor AMP is connected to the signal line Ls, for example, via the transistor SEL. The transistor AMP is configured to generate a signal based on the charge stored in the floating diffusion FD, i.e., a signal based on the voltage of the floating diffusion FD, and output it to the signal line Ls.

[0039] The transistor SEL is configured to control the output of the pixel signal. The transistor SEL is a selection transistor. The transistor SEL is electrically connected in series with the transistor AMP, as shown in the example in Figure 3. The transistor SEL is controlled by the signal SSEL and is configured to output the signal from the transistor AMP to the signal line Ls. The transistor SEL (i.e., the selection transistor) can control the timing of the pixel signal output.

[0040] The transistor SEL is configured to output a signal based on the charge converted by the photoelectric conversion unit 12. The transistor SEL can output the pixel signal of pixel P to the signal line Ls. The transistor SEL may also be electrically connected in series between the power line to which the power supply voltage (power supply voltage VDD in Figure 3) is supplied and the transistor AMP. The transistor SEL may be omitted if necessary.

[0041] The transistor RST is configured to reset the voltage of the floating diffusion FD. The transistor RST is a reset transistor. The transistor RST (i.e., the reset transistor) is electrically connected to a power line to which a power supply voltage (power supply voltage VDD in the example shown in Figure 3) is supplied, and is configured to perform a reset of the charge of the pixel P.

[0042] The transistor RST is controlled by the signal SRST and can reset the charge accumulated in the floating diffusion FD and reset the voltage of the floating diffusion FD. The transistor RST electrically connects the power line and the floating diffusion FD and discharges the charge accumulated in the floating diffusion FD. In addition, the transistor RST can reset the charge accumulated in the photoelectric conversion unit 12 via the transistor TRG.

[0043] The readout circuit 15 may be configured to be able to change the conversion gain (i.e., conversion efficiency) when converting charge into voltage. For example, the readout circuit 15 has a transistor (switching transistor) used for setting the conversion gain. As an example, the switching transistor is electrically connected between the floating diffusion FD and the transistor RST.

[0044] In the readout circuit 15, when the switching transistor is turned on, the capacitance added to the floating diffusion FD of the pixel P increases, and the conversion gain when converting charge into voltage is switched. The switching transistor can switch the capacitance connected to the gate of the transistor AMP and change the conversion gain (conversion efficiency). Note that the switching transistor may be electrically connected in series to the transistor RST or may be electrically connected in parallel to the transistor RST.

[0045] The above-described transistor TRG (transfer transistor), transistor AMP (amplification transistor), transistor SEL (selection transistor), transistor RST (reset transistor), and switching transistor are each, for example, a MOS transistor (MOSFET) having gate, source, and drain terminals.

[0046] In the example shown in FIG. 3, the transistor TRG, transistor AMP, transistor SEL, and transistor RST are each constituted by an NMOS transistor. Note that the transistors of the pixel P may be constituted by PMOS transistors as required.

[0047] The pixel control unit 111 (see FIG. 1) of the imaging device 1 supplies control signals to the gates of the transistors TRG, transistor SEL, transistor RST, switching transistor, etc. of each pixel P via the above-described control line Lc, and sets the transistors to an on state (conductive state) or an off state (non-conductive state).

[0048] For the plurality of control lines Lc for each pixel row of the imaging device 1, as an example, there are included a wiring for transmitting a signal STRG for controlling the transistor TRG, a wiring for transmitting a signal SSEL for controlling the transistor SEL, a wiring for transmitting a signal SRST for controlling the transistor RST, a wiring for transmitting a signal for controlling a switching transistor, and the like.

[0049] The transistors TRG, SEL, RST, and the switching transistor, etc. are turned on and off by the pixel control unit 111. The pixel control unit 111 controls the readout circuit 15 of each pixel P to output a pixel signal from each pixel P to the signal line Ls. The pixel control unit 111 can perform control to read out the pixel signal of each pixel P to the signal line Ls.

[0050] Note that the imaging device 1 may have a configuration in which a plurality of pixels P share one readout circuit 15. The readout circuit 15 is provided for, for example, a plurality of pixels P. In the imaging device 1, a readout circuit 15 may be arranged for each of the plurality of pixels P, and one readout circuit 15 may be shared by the plurality of pixels P. As an example, a 2×2 pixel composed of four adjacent pixels P may share one readout circuit 15.

[0051] [Configuration of Imaging Device] FIGS. 4A and 4B are diagrams for explaining an example of the planar configuration of the imaging device according to the first embodiment. FIG. 4A shows an example of the planar configuration in a layer including the optical layer 140 provided on the side where light from the measurement object is incident. Further, FIG. 4B shows an example of the planar configuration in the semiconductor layer 110 where the photoelectric conversion unit 12 is provided.

[0052] In the imaging device 1, for example, in the pixel unit 100, a plurality of types of pixels P (for example, pixel Pr, pixel Pg, pixel Pb) each having a photoelectric conversion unit 12 (that is, a photoelectric conversion region) are provided so as to be arranged in the horizontal direction (X-axis direction) and the vertical direction (Y-axis direction). In the pixel unit 100 (pixel array), for example, a plurality of pixels P are two-dimensionally arranged in a matrix.

[0053] The plurality of pixels P provided in the pixel section 100 of the imaging device 1 include, for example, pixels Pr (R pixels) that receive and convert light in the red (R) wavelength range into photoelectric light, pixels Pg (G pixels) that receive and convert light in the green (G) wavelength range into photoelectric light, and pixels Pb (B pixels) that receive and convert light in the blue (B) wavelength range into photoelectric light. The number and arrangement of pixels P in the pixel section 100 can be arbitrarily set.

[0054] The imaging device 1 has an optical layer 140 located above the semiconductor layer 110. The optical layer 140 is a layer having a plurality of structures 50 and is provided so as to be laminated on the semiconductor layer 110 on which the photoelectric conversion unit 12 is provided. The structures 50 are, for example, pillar-shaped structures. The optical layer 140 is an optical component (optical element) utilizing metamaterial (metasurface) technology.

[0055] The imaging device 1 includes an optical layer 140 having a structure 50, and is configured to guide incident light towards the photoelectric conversion unit 12. Each pixel P of the imaging device 1 has a region where the structure 50 is provided (referred to as a light-guiding region 60), as shown in the example in Figure 4A. The light-guiding region 60 corresponds to one region when the optical layer 140 is divided into regions for each pixel P or for multiple pixels P (i.e., for a predetermined number of pixels P).

[0056] In the pixel section 100, for example, a minute structure 50 is arranged in each light-guiding region 60 of each pixel P. The light-guiding region 60 has a structure 50 as a nanostructure and a member 55 provided around the structure 50. As shown in the example in Figure 4A, for example, one or more structures 50 are arranged for each pixel P (i.e., each light-guiding region 60). Structures 50 may also be arranged at the boundaries of multiple adjacent light-guiding regions 60.

[0057] The structure 50 is, for example, a pillar (i.e., a columnar member) having a prismatic shape (e.g., a rectangular prism). The optical layer 140 has the structure 50, which is a nanostructure (also called a nanopillar), and is configured to guide incident light towards the photoelectric conversion unit 12. The optical layer 140 is configured, for example, as a spectral layer that spectrally separates light. The optical layer 140 can also be called a metasurface layer or a splitter layer.

[0058] The shape of each structure 50 in the optical layer 140 can be changed as appropriate. The structure 50 may be a pillar having a cylindrical shape. The structure 50 may have a circular, elliptical, or polygonal shape in a plan view (i.e., when viewed in the XY plane). In addition, the number and arrangement of the structures 50 in each light guide region 60 are not limited to the illustrated example and can be changed as appropriate.

[0059] Member 55 is provided around the structure 50 in the optical layer 140. Member 55 is, for example, a member located around the structure 50 and is made of a material having a refractive index different from that of the structure 50. The structure 50 is provided within member 55, or it can be said that it is positioned by replacing a part of member 55. Member 55 can also be called a material layer or a support member.

[0060] Each pixel P of the imaging device 1 has a filter 20, as shown in the example in Figure 4A, etc. The filter 20 is configured to selectively transmit light in a specific wavelength range from the incident light. The filter 20 is provided, for example, between the optical layer 140 and the photoelectric conversion unit 12 for each pixel P or for each group of pixels P. The filter 20 is, as an example, an RGB color filter.

[0061] Pixel Pr (R pixel) has a filter 20 that transmits red (R) light. Pixel Pg (G pixel) has a filter 20 that transmits green (G) light. Pixel Pb (B pixel) also has a filter 20 that transmits blue (B) light. In the pixel section 100, for example, multiple R pixels, multiple G pixels, and multiple B pixels are arranged repeatedly.

[0062] The R pixels, G pixels, and B pixels are arranged, for example, according to a Bayer array. In the pixel section 100, 2x2 pixels, each consisting of one pixel Pr, two pixels Pg, and one pixel Pb, are repeatedly provided. The pixel section 100 has, for example, pixel rows in which pixels Pr and pixels Pg are provided alternately, and pixel rows in which pixels Pg and pixels Pb are provided alternately.

[0063] The R pixels, G pixels, and B pixels of the pixel unit 100 generate and output pixel signals of the R component, G component, and B component, respectively. The imaging device 1 can obtain RGB pixel signals. Note that the arrangement of pixels P in the imaging device 1 is not limited to the example described above and can be set arbitrarily.

[0064] For example, pixels Pr, Pg, and Pb may each be arranged in 2x2 pixel units. In the pixel section 100, for example, four adjacent pixels Pr, four adjacent pixels Pg, and four adjacent pixels Pb may be repeatedly arranged. It can also be said that pixels Pr, Pg, and Pb are each arranged periodically in a 2x2 grid.

[0065] Furthermore, for example, in the pixel section 100, pixels Pr, Pg, and Pb may each be rotated (tilted) by a predetermined angle (for example, 45°). As an example, pixels Pr, Pg, etc., may be arranged in the pixel section 100 so as to be aligned in an oblique direction different from the X-axis and Y-axis directions.

[0066] The filter 20 provided in the pixel P of the pixel section 100 is not limited to primary color (RGB) color filters, but may also be complementary color filters such as Cy (cyan), Mg (magenta), Ye (yellow). A filter corresponding to W (white), that is, a filter that transmits light across the entire wavelength range of incident light, may also be provided. The filter 20 may also be a filter that transmits infrared light.

[0067] Furthermore, the filter 20 may be omitted in the imaging device 1 if necessary. For example, depending on the characteristics of the optical layer 140, the filter 20 may not be provided for some pixels P in the imaging device 1. Also, for example, the filter 20 does not need to be provided for pixels that receive white (W) light and perform photoelectric conversion.

[0068] Figure 5 shows an example of a cross-sectional configuration of an imaging device according to the first embodiment. The imaging device 1 has an optical layer 140, a spacer layer 130, a filter layer 120, a semiconductor layer 110, and a wiring layer 105. The imaging device 1 has a configuration in which the optical layer 140, the spacer layer 130, the filter layer 120, the semiconductor layer 110, and the wiring layer 105 are stacked in the Z-axis direction.

[0069] In the example shown in Figure 5, an optical layer 140, a spacer layer 130, a filter layer 120, a semiconductor layer 110, and a wiring layer 105 are provided from the side where light is incident. The optical layer 140 is provided on the side where light from the optical system (e.g., imaging lens, aperture, etc.) is incident, and the wiring layer 105 is provided on the side opposite to the side where light is incident.

[0070] The semiconductor layer 110 is made of a semiconductor substrate, such as a Si substrate or an SOI substrate. As shown in Figure 5, the semiconductor layer 110 has opposing surfaces 11S1 and 11S2. Surface 11S2 is the surface opposite to surface 11S1. Surface 11S1 of the semiconductor layer 110 is, for example, a light-receiving surface (light incident surface).

[0071] The surface 11S2 of the semiconductor layer 110 is an element formation surface on which elements such as transistors and capacitive elements are formed. A gate electrode, a gate insulating film (for example, a gate oxide film), etc., are provided on the surface 11S2 of the semiconductor layer 110. The element formation surface of the semiconductor layer 110, i.e., surface 11S2, is a surface on which various circuit elements are provided, and can also be called a circuit surface.

[0072] The semiconductor layer 110 may be a SiGe (silicon germanium) substrate or a SiC (silicon carbide) substrate, etc. The semiconductor layer 110 may be composed of other semiconductor materials, such as III-V group compound semiconductor materials. The semiconductor layer 110 may be formed using other materials.

[0073] On the surface 11S1 side of the semiconductor layer 110, for example, a filter layer 120 and a spacer layer 130 are provided. On the surface 11S2 side of the semiconductor layer 110, a wiring layer 105 is provided. The optical layer 140, the spacer layer 130, and the filter layer 120 are stacked on the semiconductor layer 110 in the thickness direction perpendicular to the surface 11S1 of the semiconductor layer 110.

[0074] For example, the semiconductor layer 110 is provided with a photoelectric conversion unit 12 (photoelectric conversion element) for each pixel P. The photoelectric conversion unit 12 is provided between surfaces 11S1 and 11S2 of the semiconductor layer 110. Multiple photoelectric conversion units 12 are provided in the semiconductor layer 110 so as to be aligned with surfaces 11S1 and 11S2 of the semiconductor layer 110. For example, multiple photoelectric conversion units 12 are embedded in the semiconductor layer 110. The photoelectric conversion unit 12 can also be called a photoelectric conversion region or a photoelectric conversion layer.

[0075] The wiring layer 105 is provided laminated on the semiconductor layer 110. The wiring layer 105 includes, for example, a conductive film and an insulating film, and has a plurality of wirings and a plurality of vias (also called contacts). The wiring layer 105 has a configuration in which a plurality of wirings are laminated with an insulating film acting as an interlayer insulating film (interlayer insulating layer). The wiring layer 105 is composed of, for example, two or more or three or more layers of wiring, and is provided as a multilayer wiring layer.

[0076] The wiring of the wiring layer 105 is formed using a metallic material such as aluminum (Al), copper (Cu), cobalt (Co), or ruthenium (Ru). The wiring of the wiring layer 105 may also be made of tungsten (W), polysilicon (Poly-Si), or other conductive materials. The interlayer insulating film may be formed using silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), or other insulating materials.

[0077] For example, the above-described readout circuit 15 (see Figure 3) is provided in the semiconductor layer 110 and the wiring layer 105 for each pixel P or for each of multiple pixels P. The pixel control unit 111, signal processing unit 112, control unit 113, processing unit 114, etc., described above using Figure 1 may be provided in the semiconductor layer 110 and the wiring layer 105, or they may be provided on a substrate separate from the semiconductor layer 110.

[0078] The optical layer 140 is provided above the spacer layer 130, as shown in the example in Figure 5. The optical layer 140 is laminated on the spacer layer 130 and is located above the filter layer 120 and the semiconductor layer 110. The optical layer 140 has a light-guiding region 60 on which structures 50 (i.e., nanostructures) are provided, and is configured to guide incident light towards the photoelectric conversion unit 12. For example, in the optical layer 140, a plurality of structures 50 are provided so as to be aligned in the X-axis direction or the Y-axis direction.

[0079] The optical layer 140 includes a structure 50 and a member 55 provided around the structure 50. The structure 50 and the member 55 are made of materials having different refractive indices. The optical layer 140 has, for example, a light-guiding region 60 in which the structure 50 is arranged for each pixel P or for each of a group of pixels P in the pixel section 100.

[0080] The optical layer 140 includes, for example, a light guide region 60 provided for a pixel Pb (referred to as light guide region 60b), a light guide region 60 provided for a pixel Pg (referred to as light guide region 60g), and a light guide region 60 provided for a pixel Pr (referred to as light guide region 60r). One or more structures 50 and members 55 are formed in each of the light guide regions 60b, 60g, and 60r.

[0081] The filter layer 120 is a layer (region) having a filter 20, and is provided stacked on the semiconductor layer 110 on which the photoelectric conversion unit 12 is provided. The filter layer 120 is located between the spacer layer 130 and the semiconductor layer 110. A filter 20 is provided in the filter layer 120 for each pixel P or for each of a group of pixels P. In the filter layer 120, for example, a group of filters 20 are arranged in a matrix in a two-dimensional arrangement.

[0082] The filter layer 120 includes a filter 20 and is configured to selectively transmit incident light to the photoelectric conversion unit 12. The filter 20 is configured to transmit light in a specific wavelength band. As described above, the filter 20 is an RGB color filter, a CMY color filter, etc. The filter 20 is formed between the spacer layer 130 and the semiconductor layer 110 and is located above the photoelectric conversion unit 12.

[0083] In the imaging device 1, the filter 20 reduces color mixing between pixels P. This suppresses noise contamination of the pixel signal, thereby suppressing a decrease in the quality of the pixel signal. This makes it possible to suppress a decrease in the image quality of the image generated using the pixel signal.

[0084] The spacer layer 130 is provided between the optical layer 140 and the filter layer 120. The spacer layer 130 is formed to be stacked on the filter layer 120 and is located between the optical layer 140 and the semiconductor layer 110. The photoelectric conversion unit 12 of the pixel P converts light incident through, for example, the light guide region 60 of the optical layer 140, the spacer layer 130, and the filter 20 into photoelectric light.

[0085] The spacer layer 130 has spacers 30 for each type of pixel P. The spacer layer 130 includes, for example, a spacer 30 provided for pixel Pb (referred to as spacer 30b), a spacer 30 provided for pixel Pg (referred to as spacer 30g), and a spacer 30 provided for pixel Pr (referred to as spacer 30r). Spacers 30b, 30g, and 30r may be formed continuously and provided integrally.

[0086] The spacer layer 130, which includes spacers 30b, 30g, and 30r, is composed of an insulating film such as an oxide film, a nitride film, or an oxynitride film, and can be called an insulating layer. The spacer layer 130 may be composed of an insulating material such as silicon oxide, silicon oxynitride, silicon nitride, or aluminum oxide (AlO), or it may be composed of other materials.

[0087] The spacer layer 130 may be made of a low refractive index material such as silicon oxide or silicon oxynitride. The spacer layer 130 may also be formed using a resin material. The spacer layer 130 may also be formed using another material that transmits light in the wavelength range to be measured. The spacer layer 130 can also be described as a light-transmitting transparent layer.

[0088] The imaging device 1 has a separation region 18, as shown in the example in Figure 5. The separation region 18 is a separation region provided between a plurality of adjacent pixels P (or photoelectric conversion units 12). At least a part of the separation region 18 (separation region) is provided at the boundary between adjacent pixels P. The separation region 18 is formed, for example, in the semiconductor layer 110 between a plurality of adjacent pixels P, separating the pixels P (or photoelectric conversion units 12).

[0089] The isolation region 18 is constructed, for example, using a trench (groove) and is provided around the pixel P (or photoelectric conversion unit 12). As an example, the isolation region 18 is provided so as to surround all four sides of the photoelectric conversion unit 12 in a plan view (see also Figure 4B). The isolation region 18 may be formed in a grid pattern in the semiconductor layer 110 so as to surround each photoelectric conversion unit 12 of each pixel P. The isolation region 18 may be provided so as to penetrate the semiconductor layer 110.

[0090] The isolation region 18, for example, has an FTI (Full Trench Isolation) structure and is formed to extend to the surface 11S2 of the semiconductor layer 110. The isolation region 18 may also be provided from the surface 11S1 of the semiconductor layer 110 to the space between surfaces 11S1 and 11S2 of the semiconductor layer 110. The isolation region 18 can also be called an inter-pixel isolation portion or an inter-pixel isolation wall.

[0091] An insulating film, such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or an aluminum oxide film, is provided in the trench of the separation region 18. The trench of the separation region 18 may also be filled with an insulating material, such as polysilicon, a metallic material, or another material.

[0092] The separation region 18 may be formed using a material having a low refractive index, such as silicon oxide or silicon oxynitride. A void (cavity) may be provided within the separation region 18. The separation region 18 may be composed of a semiconductor region (n-type or p-type semiconductor region) formed by ion implantation or solid-phase diffusion.

[0093] The imaging device 1 may have at least one of a fixed charge film and a reflection suppression film on the surface 11S1 side of the semiconductor layer 110. For example, the fixed charge film and the reflection suppression film are provided between the semiconductor layer 110 and the filter 20. The fixed charge film and the reflection suppression film are composed of, as an example, a metal compound (metal oxide, metal nitride, metal oxynitride, etc.).

[0094] A fixed charge film is a film having a fixed charge (for example, a negative fixed charge), and is formed using, for example, a high dielectric material. The fixed charge film may be composed of aluminum oxide, hafnium oxide, etc. A film having a positive fixed charge may also be provided as the fixed charge film. A reflection suppression film (i.e., an anti-reflective film) is provided, as an example, laminated with the fixed charge film.

[0095] The reflection suppression film is composed of, for example, hafnium oxide, tantalum oxide, etc. The reflection suppression film may also be composed of insulating materials such as silicon nitride, aluminum oxide, etc., or may be formed using other materials. At least a portion of one of the fixed charge film and the reflection suppression film may be provided in the semiconductor layer 110 along the side surface (side wall) of the isolation region 18.

[0096] Light from the subject to be measured is incident on the optical layer 140, for example, through an optical system (such as an imaging lens). The optical layer 140 has a nanostructure 50 and is configured to guide the light incident from above to the photoelectric conversion unit 12 of each pixel P. The optical layer 140, for example, imparts a phase delay to the incident light and guides the light to the filter 20 and the photoelectric conversion unit 12.

[0097] The structure 50 has, for example, a prismatic or cylindrical shape. In plan view (as shown in the examples in Figures 4A and 5, etc., when viewed in the XY plane), the structure 50 may be a quadrilateral, a circle, or an ellipse. The shape of the structure 50 can be changed as appropriate, and may be a polygon, a cross, or other shape.

[0098] In a plan view, the structure 50 has a size that is, for example, less than or equal to a predetermined wavelength of incident light. When viewed in the XY plane, the structure 50 may have a size that is less than or equal to the wavelength range of the light to be measured (for example, the wavelength range of visible light or the wavelength range of infrared light). When viewed in the XZ plane or YZ plane, the size of the structure 50 (for example, the height of a columnar structure 50) may be less than or equal to the predetermined wavelength of incident light, or it may be greater than the wavelength of incident light.

[0099] In the optical layer 140, multiple structures 50 are arranged two-dimensionally in the X-axis and Y-axis directions. The optical layer 140 has, for example, a structure 50 in each light-guiding region 60, and is configured as an optical member (optical element) that guides light. The optical layer 140 uses the nanostructures 50 to propagate light to the photoelectric conversion unit 12. The structures 50 are also called nanopillars, nanoposts, nanoatoms, metaatoms, metasurface structures, or microstructures.

[0100] In the optical layer 140, for example, a structure 50 is provided for each pixel P of each color. In the optical layer 140, the structures 50 are arranged in each light guide region 60 so as to give a desired phase profile to the incident light. The size (width, height, etc.), number of structures, spacing between structures, constituent materials, etc., are determined so that light in the wavelength range to be detected is propagated to a predetermined photoelectric conversion unit 12.

[0101] In the optical layer 140, for example, multiple structures 50 are arranged at intervals less than or equal to a predetermined wavelength of incident light. For example, multiple structures 50 may be provided in the X-axis direction and the Y-axis direction at intervals less than or equal to the wavelength range of visible light. Alternatively, for example, multiple structures 50 may be arranged in the XY plane at intervals less than or equal to the wavelength range of infrared light.

[0102] Member 55 is provided between multiple adjacent structures 50. Member 55 is provided, for example, to fill the space between multiple adjacent structures 50, and can also be called a filling member. Part of member 55 may be formed on the upper surface (surface) of the structure 50. Member 55 is provided, for example, to cover multiple structures 50. Part of member 55 may be provided on the lower surface (bottom surface) of the structure 50 and located below the structure 50.

[0103] The structure 50 is configured to have a refractive index different from that of the adjacent material (or medium). The structure 50 has a refractive index different from that of the surrounding material or void, for example, member 55. The structure 50 and member 55 may be constructed from different materials. For example, the structure 50 may be constructed from a material with a relatively high refractive index.

[0104] The structure 50 is made of a material having a higher refractive index than the member 55, and thus has a higher refractive index than the member 55. The structure 50 is made of a high refractive index material and can also be called a high refractive index portion. The member 55 is made of a low refractive index material and can also be called a low refractive index portion. The member 55 can also be called a material layer having a different refractive index than the structure 50.

[0105] The structure 50 is composed of, for example, an oxide film containing titanium (Ti). As an example, the structure 50 is composed of titanium oxide (TiO). The structure 50 may also be formed using silicon, polysilicon (Poly-Si), amorphous silicon (a-Si), or germanium (Ge), etc. The structure 50 may also be formed using silicon carbide (SiC) or other silicon compounds.

[0106] The structure 50 may be composed of other metal compounds (metal oxides, metal nitrides, metal oxynitrides, etc.). The structure 50 may be composed of elements, oxides, nitrides, oxynitrides, or composites thereof of titanium (Ti), hafnium (Hf), zirconium (Zr), aluminum (Al), tantalum (Ta), indium (In), niobium (Nb), etc. The structure 50 may also be composed of GaP, GaN, GaAs, etc.

[0107] The component 55 is composed of an inorganic material such as an oxide, nitride, or oxynitride. The component 55 may be composed of silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), etc. The component 55 may also be formed using silicon carbide, silicon oxide carbide, silicon carbide nitride, or other silicon compounds.

[0108] The component 55 may be made of a siloxane resin, a styrene resin, an acrylic resin, or the like. The component 55 may be made of a material in which fluorine is contained in any of these resins. The component 55 may also be formed using a material in which beads (fillers) having a higher (or lower) refractive index than the resin are embedded in any of these resins.

[0109] The structure 50 and the member 55 may be made of inorganic materials or organic materials. The structure 50 or the member 55 may be made using voids (air). For example, the member 55 may be made including voids (cavities). The materials constituting the structure 50 and the member 55 are selected according to the refractive index difference with the surrounding material, the wavelength range of the light to be measured, etc.

[0110] The optical layer 140 is configured to control the wavefront of light by causing a phase delay in the incident light through, for example, the difference in refractive index between the structure 50 and the surrounding material (medium). The optical layer 140 adjusts the direction of light propagation (i.e., the propagation direction) by giving a phase delay to the incident light through the structure 50 and the member 55 surrounding the structure 50.

[0111] In each pixel P (or each light-guiding region 60), for example, the effective refractive index of the structure 50 and the member 55 is adjusted according to the occupancy rate (filling rate) of the structure 50, and the amount of phase delay of light in each wavelength range is determined. By adjusting the size and number of structures 50, the amount of phase delay can be controlled to achieve a desired phase distribution.

[0112] The optical layer 140 may have members 57 and 58, as shown in the example in Figure 5. Member 57 is configured, for example, as a reflection suppression film (i.e., an anti-reflective film) and is provided on the structure 50 of the optical layer 140. Member 57 (reflection suppression film) is provided, for example, on the side of the structure 50 to which light is incident. Member 57 is provided on the structure 50 to reduce (suppress) reflection.

[0113] Member 57 is provided, for example, to cover a plurality of structures 50 and members 55, and is configured to have a refractive index different from that of the structures 50 (or members 55). Member 57 may be made of an insulating material such as silicon oxide or silicon oxynitride, or it may be made of other materials. Member 57 may be made by laminating a plurality of films.

[0114] The member 58 is configured as at least one of a reflection suppression film and a stopper film. The member 58 is provided between the spacer layer 130 and the optical layer 140 structure 50. The member 58 is formed, for example, as an etching stopper film (stopper layer) during manufacturing. The provision of the member 58 improves the processability of the structure 50.

[0115] Component 58 is composed of, for example, a single layer film made of one of silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, etc., or a laminated film made of two or more of these materials. Component 58 may also be formed using other materials. The imaging device 1 may have only one of component 57 or component 58.

[0116] The optical layer 140 is configured, for example, to be capable of spectrally separating light and is provided as a spectral element (spectrometry unit) that spectrally separates incident light. The optical layer 140 is configured as a splitter (color splitter) and can also be called a color splitter layer or a color separation layer. The optical layer 140 can also be called an optical element configured to redirect light.

[0117] The optical layer 140 adjusts the propagation direction of light by applying different phase delay amounts according to the wavelength of light, thereby separating the incident light into light of each wavelength range. The size, material (refractive index), etc., of the structure 50 are determined so that light of a specific wavelength range to be detected branches and proceeds to the photoelectric conversion unit 12 of the desired pixel P. The light phased by the optical layer 140 reaches the photoelectric conversion unit 12 via the spacer layer 130 and the filter layer 120, etc.

[0118] Light from the subject to be measured is incident on the photoelectric conversion unit 12 of each pixel P via the optical layer 140 and the spacer layer 130, etc. Each pixel P converts the incident light into electricity to generate a pixel signal. The imaging device 1 can use the pixel signals obtained by each pixel P to generate, for example, image data showing the subject image, image data relating to the distance to the object to be measured (distance image data), etc.

[0119] The optical layer 140 of the imaging device 1 imparts different phase delays to light in multiple wavelength ranges, such as light in a first wavelength range, light in a second wavelength range, and light in a third wavelength range. In the imaging device 1, the optical layer 140 adjusts the propagation direction of blue light, green light, and red light, which are, for example, the first to third wavelengths of light.

[0120] The light guide region 60b of pixel Pb is configured to propagate blue (B) light from the incident light to the photoelectric conversion unit 12 of pixel Pb. Furthermore, the light guide region 60b of pixel Pb is configured to propagate red (R) light from the incident light to the photoelectric conversion unit 12 of pixel Pr, and green (G) light to the photoelectric conversion unit 12 of pixel Pg. The light guide region 60b of pixel Pb splits the incident light, guiding the red wavelength light towards pixel Pr and the green wavelength light towards pixel Pg.

[0121] The light guide region 60g of pixel Pg is configured to propagate green (G) light from the incident light to the photoelectric conversion unit 12 of pixel Pg. Furthermore, the light guide region 60g of pixel Pg is configured to propagate red (R) light from the incident light to the photoelectric conversion unit 12 of pixel Pr, and blue (B) light to the photoelectric conversion unit 12 of pixel Pb. The light guide region 60g of pixel Pg splits the incident light, guiding the red wavelength light towards pixel Pr and the blue wavelength light towards pixel Pb.

[0122] The light guide region 60r of the pixel Pr is configured to propagate red (R) light from the incident light to the photoelectric conversion unit 12 of the pixel Pr. Furthermore, the light guide region 60r of the pixel Pr is configured to propagate green (G) light from the incident light to the photoelectric conversion unit 12 of the pixel Pg, and blue (B) light to the photoelectric conversion unit 12 of the pixel Pb. The light guide region 60r of the pixel Pr splits the incident light, guiding the light in the green wavelength range toward the pixel Pg and the light in the blue wavelength range toward the pixel Pb.

[0123] Thus, as schematically shown by the arrows in Figure 6A, the multiple pixels surrounding the pixel Pb guide the blue wavelength light of the incident light toward the pixel Pb. The blue light incident on the pixel Pb and the blue light incident on each of the surrounding pixels can be focused onto the photoelectric conversion unit 12 of the pixel Pb. The photoelectric conversion unit 12 of the pixel Pb receives light in the blue wavelength range, performs photoelectric conversion, and can generate an electric charge corresponding to the amount of light received.

[0124] As schematically shown by the arrows in Figure 6B, multiple pixels surrounding pixel Pg guide the green wavelength light of the incident light toward pixel Pg. The green light incident on pixel Pg and the green light incident on each of the surrounding pixels can be focused onto the photoelectric conversion unit 12 of pixel Pg. The photoelectric conversion unit 12 of pixel Pg receives light in the green wavelength range, performs photoelectric conversion, and can generate an electric charge corresponding to the amount of light received.

[0125] Furthermore, as schematically shown by the arrows in Figure 6C, the multiple pixels surrounding the pixel Pr guide the red wavelength light of the incident light toward the pixel Pr. The red light incident on the pixel Pr and the red light incident on each of the surrounding pixels can be focused onto the photoelectric conversion unit 12 of the pixel Pr. The photoelectric conversion unit 12 of the pixel Pr receives light in the red wavelength range, performs photoelectric conversion, and can generate an electric charge corresponding to the amount of light received.

[0126] In this way, the imaging device 1, through the optical layer 140 (i.e., the splitter layer), can collect light from surrounding pixels of the pixel P into the pixel P. Light can be collected from a wider area than the size of one pixel, increasing the amount of light received by the photoelectric conversion unit 12 of the pixel P. This can improve the quantum efficiency (QE).

[0127] Figures 7 and 8 illustrate an example of the configuration of an imaging device according to the first embodiment. In the imaging device 1, the thickness of the spacer layer 130 can be set for each type of pixel P. The thickness of the spacer layer 130 between the optical layer 140 and the filter layer 120 (i.e., the thickness (height) in the Z-axis direction) is determined, for example, for each color of pixel P. By configuring the imaging device 1 in this way, it is possible to improve the sensitivity to incident light.

[0128] As shown in the examples in Figures 7 and 8, the imaging device 1 is configured such that, for example, the thickness of the spacer layer 130 in pixel Pb (B pixel) is different from the thickness of the spacer layer 130 in pixel Pg (G pixel). Alternatively, the imaging device 1 may be configured such that the thickness of the spacer layer 130 in pixel Pb is different from the thickness of the spacer layer 130 in pixel Pr (R pixel).

[0129] The optical layer 140 may be configured such that the light guide region 60b of pixel Pb and the light guide region 60g of pixel Pg are located at different distances from the semiconductor layer 110 (or filter layer 120). Alternatively, for example, the optical layer 140 may be configured such that the light guide region 60b of pixel Pb and the light guide region 60r of pixel Pr are located at different distances from the semiconductor layer 110 (or filter layer 120).

[0130] The thickness of the spacer layer 130 in pixel Pb is set to be greater (longer) than, for example, the thickness of the spacer layer 130 in pixel Pg. In the example shown in Figure 7, the thickness of the spacer layer 130 in pixel Pb, i.e., the thickness d1 of spacer 30b, is greater than the thickness of the spacer layer 130 in pixel Pg, i.e., the thickness d2 of spacer 30g. The thickness d2 of spacer 30g in the Z-axis direction is less (shorter) than the thickness d1 of spacer 30b.

[0131] Furthermore, in the example shown in Figure 7, the structure 50 of the light-guiding region 60b of pixel Pb (referred to as structure 50b) and the structure 50 of the light-guiding region 60g of pixel Pg (referred to as structure 50g) are at different heights. The distance L1 from the surface 11S1 of the semiconductor layer 110 to the lower end (bottom) of structure 50b is greater than the distance L2 from the surface 11S1 of the semiconductor layer 110 to the lower end of structure 50g. The structure 50b of pixel Pb is positioned above the lower end (bottom surface) of structure 50g of pixel Pg.

[0132] The thickness of the spacer layer 130 in pixel Pb is set to be greater than, for example, the thickness of the spacer layer 130 in pixel Pr. In the examples shown in Figures 7 and 8, the thickness of the spacer layer 130 in pixel Pb, i.e., the thickness d1 of spacer 30b, is set to be greater than the thickness of the spacer layer 130 in pixel Pr, i.e., the thickness d3 of spacer 30r in the Z-axis direction is smaller than the thickness d1 of spacer 30b.

[0133] Furthermore, in the examples shown in Figures 7 and 8, the structure 50b of the light guide region 60b of pixel Pb and the structure 50 (referred to as structure 50r) of the light guide region 60r of pixel Pr have different height positions in the Z-axis direction. The distance L1 from the surface 11S1 of the semiconductor layer 110 to the lower end of structure 50b is greater than the distance L3 from the surface 11S1 of the semiconductor layer 110 to the lower end of structure 50r. The structure 50b of pixel Pb is provided above the lower end of the structure 50r of pixel Pr.

[0134] The imaging device 1 may be configured such that the thickness d2 of spacer 30g and the thickness d3 of spacer 30r are equal, or it may be configured such that the thickness d2 of spacer 30g and the thickness d3 of spacer 30r are different. The distance L2 from the surface 11S1 of the semiconductor layer 110 to the lower end of the structure 50g may be equal to or different from the distance L3 from the surface 11S1 of the semiconductor layer 110 to the lower end of the structure 50r.

[0135] Figures 9 and 10 show examples of the configuration of an imaging device according to a comparative example. In the comparative example, the spacer layers in the B pixels, G pixels, and R pixels are all the same thickness. In Figures 9 and 10, the dashed arrow Lg schematically represents green light. The dashed arrow Lb schematically represents blue light. The dashed arrow Lr schematically represents red light.

[0136] If the spacer layers in pixels B and G are of equal thickness, as schematically shown in Figure 9, the light collected from adjacent pixels of pixel P by the optical layer may be absorbed by the filter 20 of the adjacent pixel, potentially reducing the amount of light incident (transmitted) to the photoelectric conversion unit 12 of pixel P. This can reduce the amount of light received by the photoelectric conversion unit 12 and decrease its sensitivity to incident light.

[0137] Furthermore, if the spacer thickness in each color pixel is uniformly increased, as shown in Figure 10, the sensitivity of a particular color pixel may deteriorate due to differences in focal length for each wavelength. Since the focal length of green light in the optical layer 140 is shorter than that of blue light, and the focal length of red light tends to be shorter than that of green light, the focus position of red light becomes significantly above the filter 20, resulting in a front-focus condition, which can greatly reduce the sensitivity of the R pixel.

[0138] As described above, the imaging device 1 according to this embodiment has a spacer layer 130 with a set thickness for each type of pixel P. Therefore, as shown in the example in Figure 11, it is possible to appropriately guide light to the filter 20 and the photoelectric conversion unit 12. It is possible to suppress the absorption of light focused from an adjacent pixel to a pixel P by the filter 20 of the adjacent pixel.

[0139] In this embodiment, the height position of the optical layer 140 and the structure 50 in each color pixel P can be adjusted, making it possible to prevent light absorption by the filter 20 adjacent to the pixel P. This suppresses a decrease in the amount of light incident on the photoelectric conversion unit 12 of the pixel P, thereby improving the sensitivity of the pixel P.

[0140] Figure 12 is a diagram illustrating another configuration example of the imaging device according to the first embodiment. The optical layer 140 may be configured such that the structure 50b of the light guide region 60b and the structure 50g of the light guide region 60g (or the structure 50r of the light guide region 60r) have different lengths (heights). For example, the length of the structure 50g (or structure 50r) in the Z-axis direction may be greater than the length of the structure 50b.

[0141] The spacer layer 130 may be composed of a plurality of members, for example, member 31 and member 32. In the example shown in Figure 12, the spacer layer 130 has a structure in which member 31 and member 32 are laminated. For example, member 31 may be formed using a resin material as a resin layer. Member 32 may be composed of an insulating film such as silicon oxide or silicon oxynitride as an insulating layer.

[0142] Figure 13 is a diagram illustrating an example of transmittance in a pixel of an imaging device according to the first embodiment. In Figure 13, the vertical axis represents transmittance (in %), and the horizontal axis represents wavelength (in nm). Figure 13 shows the percentage of light transmitted through each filter 20 (i.e., color filter) of pixels Pb (B pixels), Pg (G pixels), and Pr (R pixels).

[0143] In Figure 13, the transmittance shown by the solid line A1 is the transmittance when the thickness of the spacer layer 130 in pixel Pb is greater than the thickness of the spacer layer 130 in pixel Pg (and pixel Pr), as shown in the example in Figure 5 or Figure 12. In Figure 13, the transmittance shown by the dashed line A2 is the transmittance in the comparative example where the thickness of the spacer layer 130 in pixel Pb is the same as the thickness of the spacer layer 130 in pixel Pg (and pixel Pr), as shown in Figure 9.

[0144] Compared to the comparative example, the transmittance in the blue (B) wavelength range can be significantly improved, as shown by the arrow in Figure 13. According to the imaging device 1 of this embodiment, for example, the transmittance in pixel Pb (B pixel) can be improved, and the sensitivity of pixel Pb can be improved. Furthermore, it becomes possible to improve the image quality of the image generated using the pixel signal of each pixel.

[0145] Figures 14 and 15 are diagrams illustrating an example of the configuration of an imaging device according to the first embodiment. The thickness of the spacer layer 130 of the pixel Pg, i.e., the thickness d2 of the spacer 30g, may be approximately the same as the thickness of the spacer layer 130 of the pixel Pr, i.e., the thickness d3 of the spacer 30r, as shown in the example in Figure 14.

[0146] The spacer layer 130 may be configured such that the thickness d2 of the spacer 30g for pixel Pg and the thickness d3 of the spacer 30r for pixel Pr are different from each other. For example, as shown in the example in Figure 15, the thickness d3 of the spacer 30r for pixel Pr may be set to be smaller (shorter) than the thickness d2 of the spacer 30g for pixel Pg.

[0147] The number and arrangement of pixels P in the imaging device 1 are not limited to the examples described above and can be changed as appropriate. The imaging device 1 may have four or more types of pixels P having different spacer thicknesses. For example, in the pixel section 100, four or more types of pixels P that convert light in different wavelength ranges into photoelectric light may be repeatedly arranged.

[0148] The technology described herein can be applied, for example, to a device that spectrally analyzes infrared light. The photodetector (imaging device) described herein is configured, for example, to detect infrared light in multiple wavelength bands. For example, the optical layer of the photodetector (imaging device) can be configured to spectrally analyze incident infrared light into infrared light in multiple wavelength bands (for example, infrared light in a first wavelength band, infrared light in a second wavelength band, and infrared light in a third wavelength band, etc.).

[0149] [Function and Effects] The photodetector according to this embodiment comprises an optical layer (optical layer 140) having a plurality of structures (structure 50), a semiconductor layer (semiconductor layer 110), a first pixel (e.g., pixel Pb) including a first photoelectric conversion element (photoelectric conversion unit 12) provided on the semiconductor layer, and a first filter (filter 20) provided between the optical layer and the first photoelectric conversion element and transmitting light in a first wavelength range, a second pixel (e.g., pixel Pg) including a second photoelectric conversion element provided on the semiconductor layer, and a second filter provided between the optical layer and the second photoelectric conversion element and transmitting light in a second wavelength range, a first spacer (e.g., spacer 30b) provided between the optical layer and the first filter, and a second spacer (e.g., spacer 30g) provided between the optical layer and the second filter.

[0150] The photodetector (imaging device 1) according to this embodiment includes an optical layer 140 having a plurality of structures 50, a spacer 30b provided between the optical layer 140 and the filter 20 of the pixel Pb, and a spacer 30g provided between the optical layer 140 and the filter 20 of the pixel Pg. Therefore, it is possible to realize a photodetector capable of improving sensitivity.

[0151] Next, modified examples of the present disclosure will be described. In the following, components similar to those in the above embodiments will be denoted by the same reference numerals, and their descriptions will be omitted as appropriate.

[0152] (Modification 1) Figure 16 is a diagram illustrating an example of the configuration of an imaging device according to Modification 1 of the present disclosure. The imaging device 1 may have a light guide member 25, as shown in the example in Figure 16. The light guide member 25 is provided between a plurality of adjacent filters 20. The light guide member 25 is provided, for example, along the side (side) of the filter 20.

[0153] In the example shown in Figure 16, the light guide member 25 is provided so as to reach the surface 11S1 of the semiconductor layer 110 from between a plurality of adjacent filters 20. The light guide member 25 is provided, for example, as a wall-like structure and can also be called a light guide wall. The light guide member 25 may be provided so as to surround all four sides of the filter 20 in a plan view (i.e., when viewed in the XY plane).

[0154] The light guide member 25 is configured to have a refractive index lower than that of the surrounding members, such as the filter 20. The light guide member 25 may be made of silicon oxide, silicon oxynitride, or other materials. The light guide member 25 may be constructed using voids (cavities).

[0155] In the imaging device 1 according to this modified example, a light guide member 25 is provided, allowing light to be reflected towards the photoelectric conversion unit 12 side by the light guide member 25, as schematically shown by the dashed line in Figure 17. This suppresses light leakage to surrounding pixels P, and for example, prevents color mixing.

[0156] (Modification 2) Figure 18 is a diagram illustrating an example of the configuration of an imaging device according to Modification 2. The imaging device 1 may have multiple layers (multiple stages) of structures 50. The optical layer 140 of the imaging device 1 has multiple structures 50, for example, structures 50a and structures 50b, which are arranged to be stacked on top of each other. In the light guide region 60 of each pixel P, as an example, a first stage structure 50a and a second stage structure 50b are provided.

[0157] As shown in Figure 18, the optical layer 140 has an optical layer 141 (first layer) including a structure 50a and a member 55a, and an optical layer 142 (second layer) including a structure 50b and a member 55b. The optical layer 142 is provided laminated on top of the optical layer 141. The structures 50a and 50b each have, for example, a columnar shape.

[0158] Structure 50a and member 55a are constructed, for example, using materials with different refractive indices. Structure 50b and member 55b may also be constructed using materials with different refractive indices. Note that the shapes and number of structures 50a and 50b are not limited to the illustrated examples and can be changed as appropriate.

[0159] In the imaging device 1 according to this modified example, the optical layer 140 having multiple layers of structures (for example, structures 50a and 50b) and the spacer layer 130 enable appropriate light guidance to the filter 20 and the photoelectric conversion unit 12. The multiple stages of metasurface elements and the spacer layer 130 make it possible to efficiently focus light of any wavelength range to the photoelectric conversion unit 12.

[0160] <2. Second Embodiment> Next, a second embodiment of the present disclosure will be described. In the following, components similar to those in the embodiments described above will be denoted by the same reference numerals, and their descriptions will be omitted as appropriate.

[0161] Figure 19 is a diagram illustrating an example of the configuration of an imaging device according to a second embodiment of the present disclosure. The imaging device 1 is configured such that the thickness of the edges of the filter 20 is different from the thickness of the central part of the filter 20. For example, the filters 20 for each color pixel P are provided such that the thickness of the edges of the filter 20 is smaller (thinner) than the thickness of the central part of the filter 20, as shown in the example in Figure 19.

[0162] In the imaging device 1, for example, pixels Pb, Pg, and Pr are each provided with a filter 20 having a convex shape. As an example, the filter 20 has a convex shape toward the spacer layer 130. The filter 20 may have a triangular cross-sectional shape or other shapes.

[0163] The filter 20 is configured such that the thickness of the end portion 21 of the filter 20 is smaller than the thickness of the central portion 22 of the filter 20, as shown in the example in Figure 20. In the example shown in Figure 20, the thickness d11 of the end portion 21 (i.e., the end region) of the filter 20 is smaller than the thickness d12 of the central portion 22 (i.e., the central region) of the filter 20.

[0164] Each pixel P filter 20 has, for example, a central portion 22 which is a convex portion (i.e., a convex structural portion) and an end portion 21 which is a concave portion (i.e., a recessed structural portion). The filter 20 may be provided so as to have a concave end portion 21. Note that the shape of the filter 20 is not limited to the illustrated example and can be changed as appropriate.

[0165] According to the imaging device 1 of this embodiment, as shown in the example in Figure 21, it is possible to appropriately guide light to the filter 20 and the photoelectric conversion unit 12. It is possible to suppress the absorption of light guided from an adjacent pixel to a pixel P by the filter 20 of the adjacent pixel. It is possible to increase the amount of light received by the photoelectric conversion unit 12 of the pixel P, and to improve the sensitivity of each color pixel P.

[0166] [Function and Effects] The light detection device according to this embodiment includes a first pixel (e.g., pixel Pb) which includes an optical layer (optical layer 140) having a plurality of structures (structure 50), a semiconductor layer (semiconductor layer 110), a first photoelectric conversion element (photoelectric conversion unit 12) provided on the semiconductor layer, and a first filter (filter 20) provided between the optical layer and the first photoelectric conversion element and transmitting light in a first wavelength range, and a second pixel (e.g., pixel Pg) which includes a second photoelectric conversion element provided on the semiconductor layer and a second filter provided between the optical layer and the second photoelectric conversion element and transmitting light in a second wavelength range. The thickness of the edges of the first filter is smaller than the thickness of the central part of the first filter.

[0167] The photodetector (imaging device 1) according to this embodiment has a filter 20 provided between an optical layer 140 having a plurality of structures 50 and a photoelectric conversion unit 12. The thickness of the edges of the filter 20 is smaller than the thickness of the central part of the filter 20. Therefore, it is possible to realize a photodetector capable of improving sensitivity.

[0168] Next, modified examples of the present disclosure will be described. In the following, components similar to those in the above embodiments will be denoted by the same reference numerals, and their descriptions will be omitted as appropriate.

[0169] (Modification 3) Figures 22 and 23 are diagrams illustrating an example of the configuration of an imaging device according to Modification 3 of the present disclosure. As shown in the example in Figure 22, the filter 20 may have a triangular cross-sectional shape. Alternatively, for example, the filter 20 may have a stepped shape as shown in the example in Figure 23. The filter 20 may have a shape that includes an end portion 21 as a recess, as shown in the example in Figure 22 or Figure 23.

[0170] (Modification 4) Figures 24 and 25 are diagrams illustrating an example of the configuration of an imaging device according to Modification 4. The imaging device 1 may have a light guide member 25 (i.e., a light guide wall) as shown in the example in Figure 24 or Figure 25. At least a part of the light guide member 25 is provided between a plurality of adjacent filters 20. As shown in the example in Figure 25, the optical layer 140 may be constructed using a plurality of layers (multiple stages) of structure 50, for example, structure 50a and structure 50b.

[0171] <3. Third Embodiment> Next, a third embodiment of the present disclosure will be described. In the following, components similar to those in the embodiments described above will be denoted by the same reference numerals, and their descriptions will be omitted as appropriate.

[0172] Figure 26 is a diagram illustrating an example configuration of an imaging device according to a third embodiment of the present disclosure. The imaging device 1 may be configured such that the width of the filter 20 differs for each type of pixel P. In the imaging device 1, the width (length) of the filter 20 in the X-axis direction (or Y-axis direction) can be set, for example, for each color of pixel P.

[0173] As shown in the example in Figure 26, the imaging device 1 is configured such that, for example, the width of the filter 20 for pixel Pb (B pixel) (referred to as filter 20b) and the width of the filter 20 for pixel Pg (G pixel) (referred to as filter 20g) are different. Also, for example, the imaging device 1 is configured such that the width of the filter 20b for pixel Pb and the width of the filter 20 for pixel Pr (R pixel) (referred to as filter 20r) are different.

[0174] Figures 27 and 28 are diagrams illustrating an example configuration of an imaging device according to a third embodiment. The width of the filter 20b for pixel Pb is set to be larger (longer) than, for example, the width of the filter 20g for pixel Pg. In the example shown in Figure 27, the width W1 of the filter 20b for pixel Pb is greater than the width W2 of the filter 20g for pixel Pg.

[0175] The imaging device 1 may be configured such that the width of the filter 20r for pixel Pr and the width of the filter 20g for pixel Pg are equal, or it may be configured such that the widths of the filter 20r and the width of the filter 20g are different. For example, as shown in the example in Figure 28, the width W3 of the filter 20r for pixel Pr may be larger than the width W2 of the filter 20g for pixel Pg.

[0176] In the case of the imaging device 1 according to this embodiment, as shown in the example in Figure 29, it is possible to appropriately guide light to the filter 20 and the photoelectric conversion unit 12. It is possible to suppress the absorption of light guided from an adjacent pixel to a pixel P by the filter 20 of the adjacent pixel. The amount of light received by the photoelectric conversion unit 12 can be increased, and the sensitivity of the pixel P can be improved.

[0177] [Function and Effects] The light detection device according to this embodiment includes an optical layer (optical layer 140) having a plurality of structures (structure 50), a semiconductor layer (semiconductor layer 110), a first pixel (e.g., pixel Pb) including a first photoelectric conversion element (photoelectric conversion unit 12) provided on the semiconductor layer, and a first filter (e.g., filter 20b) provided between the optical layer and the first photoelectric conversion element and transmitting light in a first wavelength range, and a second pixel (e.g., pixel Pg) including a second photoelectric conversion element provided on the semiconductor layer and a second filter (e.g., filter 20g) provided between the optical layer and the second photoelectric conversion element and transmitting light in a second wavelength range. The width of the first filter is different from the width of the second filter.

[0178] The light detection device (imaging device 1) according to this embodiment includes an optical layer 140 having a plurality of structures 50, a pixel Pb having a photoelectric conversion unit 12 and a filter 20b, and a pixel Pg having a photoelectric conversion unit 12 and a filter 20g. The width of the filter 20b is different from the width of the filter 20g. Therefore, it is possible to realize a light detection device that can improve sensitivity.

[0179] Next, modified examples of the present disclosure will be described. In the following, components similar to those in the above embodiments will be denoted by the same reference numerals, and their descriptions will be omitted as appropriate.

[0180] (Modification 5) Figures 30 and 31 are diagrams illustrating an example of the configuration of an imaging device according to Modification 5 of the present disclosure. The imaging device 1 may have a light guide member 25, as shown in the example in Figure 30 or Figure 31. The optical layer 140 of the imaging device 1 may be configured to include multiple layers (multiple stages) of structures 50, for example, structure 50a and structure 50b, as shown in the example in Figure 31. In this modification as well, the same effects as in the above-described embodiment can be obtained.

[0181] <4. Examples of Application> The above-described imaging device 1 can be applied to any type of electronic device equipped with an imaging function, such as camera systems like digital still cameras and video cameras, or mobile phones with imaging capabilities. Figure 32 shows a schematic configuration of the electronic device 1000.

[0182] The electronic device 1000 includes, for example, a lens group 1001, an imaging device 1, a DSP (Digital Signal Processor) circuit 1002, a frame memory 1003, a display unit 1004, a recording unit 1005, an operation unit 1006, and a power supply unit 1007, all of which are interconnected via a bus line 1008.

[0183] The lens group 1001 captures incident light (image light) from the subject and forms an image on the imaging surface of the imaging device 1. The imaging device 1 converts the amount of incident light formed on the imaging surface by the lens group 1001 into an electrical signal on a pixel-by-pixel basis and supplies it as a pixel signal to the DSP circuit 1002.

[0184] The DSP circuit 1002 is a signal processing circuit that processes signals supplied from the imaging device 1. The DSP circuit 1002 outputs image data obtained by processing the signals from the imaging device 1. The frame memory 1003 temporarily holds the image data processed by the DSP circuit 1002 in frame units.

[0185] The display unit 1004 consists of, for example, a panel-type display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel, and records the video or still image data captured by the imaging device 1 onto a recording medium such as a semiconductor memory or a hard disk.

[0186] The operation unit 1006 outputs operation signals for various functions possessed by the electronic device 1000 in accordance with user operations. The power supply unit 1007 appropriately supplies various power sources to the DSP circuit 1002, frame memory 1003, display unit 1004, recording unit 1005, and operation unit 1006.

[0187] <5. Application Examples> (Application Examples to Mobile Devices) The technology relating to this disclosure (this technology) can be applied to various products. For example, the technology relating to this disclosure may be realized as a device mounted on any type of mobile device such as automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobility devices, airplanes, drones, ships, and robots.

[0188] Figure 33 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the technology described herein may be applied.

[0189] The vehicle control system 12000 comprises a plurality of electronic control units connected via a communication network 12001. In the example shown in Figure 33, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. The functional configuration of the integrated control unit 12050 is shown in the figure, which includes a microcomputer 12051, an audio / image output unit 12052, and an in-vehicle network interface 12053.

[0190] The drivetrain control unit 12010 controls the operation of devices related to the vehicle's drivetrain according to various programs. For example, the drivetrain control unit 12010 functions as a control device for a drivetrain generating device that generates driving force for the vehicle, such as an internal combustion engine or a drive motor; a drivetrain transmission mechanism that transmits driving force to the wheels; a steering mechanism that adjusts the steering angle of the vehicle; and a braking device that generates braking force for the vehicle.

[0191] The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window system, or various lamps such as headlights, reverse lights, brake lights, turn signals, or fog lights. In this case, the body system control unit 12020 may receive radio waves transmitted from a portable device that replaces a key or signals from various switches. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock system, power window system, lamps, etc.

[0192] The external information detection unit 12030 detects information from outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the external information detection unit 12030. The external information detection unit 12030 causes the imaging unit 12031 to capture images of the outside of the vehicle and receives the captured images. Based on the received images, the external information detection unit 12030 may perform object detection processing such as detecting people, cars, obstacles, signs, or characters on the road surface, or distance detection processing.

[0193] The imaging unit 12031 is a light sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0194] The in-vehicle information detection unit 12040 detects information inside the vehicle. The in-vehicle information detection unit 12040 is connected to, for example, a driver status detection unit 12041 that detects the driver's state. The driver status detection unit 12041 includes, for example, a camera that captures images of the driver, and the in-vehicle information detection unit 12040 may calculate the driver's level of fatigue or concentration, or determine whether the driver is drowsy, based on the detection information input from the driver status detection unit 12041.

[0195] The microcomputer 12051 can calculate control target values ​​for the drive force generator, steering mechanism, or braking device based on information inside and outside the vehicle acquired by the external information detection unit 12030 or the internal information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing ADAS (Advanced Driver Assistance System) functions, including collision avoidance or impact mitigation, following driving based on distance between vehicles, maintaining vehicle speed, vehicle collision warning, or vehicle lane departure warning.

[0196] Furthermore, the microcomputer 12051 can perform cooperative control for purposes such as autonomous driving, where the vehicle drives autonomously without driver intervention, by controlling the drive force generating device, steering mechanism, or braking device, etc., based on information about the vehicle's surroundings acquired by the external information detection unit 12030 or the internal information detection unit 12040.

[0197] Furthermore, the microcomputer 12051 can output control commands to the body system control unit 12020 based on external information acquired by the external information detection unit 12030. For example, the microcomputer 12051 can control the headlights according to the position of a preceding or oncoming vehicle detected by the external information detection unit 12030, and perform coordinated control aimed at reducing glare, such as switching from high beams to low beams.

[0198] The audio-image output unit 12052 transmits at least one of audio and image output signals to an output device capable of visually or audibly notifying information to the vehicle's occupants or to those outside the vehicle. In the example shown in Figure 33, the output devices are exemplified as an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an onboard display and a head-up display.

[0199] Figure 34 shows an example of the installation position of the imaging unit 12031.

[0200] In Figure 34, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0201] The imaging units 12101, 12102, 12103, 12104, and 12105 are installed, for example, on the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield inside the vehicle 12100. The imaging unit 12101 installed on the front nose and the imaging unit 12105 installed on the upper part of the windshield inside the vehicle mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 installed on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 installed on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 installed on the upper part of the windshield inside the vehicle is mainly used for detecting preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, or lanes.

[0202] Figure 34 shows an example of the imaging ranges of imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of imaging unit 12101 located on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of imaging units 12102 and 12103 located on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of imaging unit 12104 located on the rear bumper or back door. For example, by superimposing the image data captured by imaging units 12101 to 12104, an overhead view image of the vehicle 12100 can be obtained.

[0203] At least one of the imaging units 12101 to 12104 may have a function for acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera consisting of multiple image sensors, or an image sensor having pixels for phase difference detection.

[0204] For example, the microcomputer 12051, based on distance information obtained from the imaging units 12101 to 12104, can determine the distance to each object within the imaging range 12111 to 12114 and the temporal change of this distance (relative speed to the vehicle 12100). In particular, it can extract the closest object on the vehicle 12100's path that is traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or more) as the preceding vehicle. Furthermore, the microcomputer 12051 can set a predetermined distance to be maintained before the preceding vehicle and perform automatic braking control (including follow-and-stop control) and automatic acceleration control (including follow-and-start control), etc. In this way, cooperative control aimed at autonomous driving, where the vehicle drives autonomously without driver intervention, can be performed.

[0205] For example, the microcomputer 12051 can use distance information obtained from imaging units 12101 to 12104 to classify and extract three-dimensional object data related to three-dimensional objects, such as motorcycles, passenger cars, large vehicles, pedestrians, utility poles, and other three-dimensional objects, and use this data for automatic obstacle avoidance. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the degree of risk of collision with each obstacle. If the collision risk is above a set value and there is a possibility of collision, the microcomputer 12051 can provide driving assistance to avoid collisions by outputting a warning to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or evasive steering via the drive system control unit 12010.

[0206] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared light. For example, the microcomputer 12051 can recognize pedestrians by determining whether or not pedestrians are present in the images captured by the imaging units 12101 to 12104. Such pedestrian recognition is performed, for example, by a procedure to extract feature points from the images captured by the imaging units 12101 to 12104 as infrared cameras, and a procedure to perform pattern matching on a series of feature points that indicate the contour of an object to determine whether or not it is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the imaging units 12101 to 12104 and recognizes a pedestrian, the audio-image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio-image output unit 12052 may also control the display unit 12062 to display an icon indicating a pedestrian at a desired position.

[0207] The above describes an example of a mobile control system to which the technology described herein can be applied. The technology described herein can be applied to, for example, the imaging unit 12031 of the configuration described above. Specifically, for example, the imaging device 1 can be applied to the imaging unit 12031. By applying the technology described herein to the imaging unit 12031, it becomes possible to obtain high-definition captured images. This makes it possible to perform high-precision control using captured images in the mobile control system.

[0208] (Examples of application to endoscopic surgical systems) The technology described herein (the technology) can be applied to various products. For example, the technology described herein may be applied to endoscopic surgical systems.

[0209] Figure 35 is a diagram showing an example of a schematic configuration of an endoscopic surgical system to which the technology described herein (the technology) may be applied.

[0210] Figure 35 illustrates a surgeon (physician) 11131 performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgical system 11000. As shown in the figure, the endoscopic surgical system 11000 consists of an endoscope 11100, other surgical instruments 11110 such as an insufflation tube 11111 and an energy treatment device 11112, a support arm device 11120 for supporting the endoscope 11100, and a cart 11200 equipped with various devices for endoscopic surgery.

[0211] The endoscope 11100 consists of a barrel 11101, the tip of which is inserted into the body cavity of the patient 11132 for a predetermined length, and a camera head 11102 connected to the base end of the barrel 11101. In the illustrated example, the endoscope 11100 is shown as a so-called rigid endoscope having a rigid barrel 11101, but the endoscope 11100 may also be configured as a so-called flexible endoscope having a flexible barrel.

[0212] An opening into which an objective lens is fitted is provided at the tip of the microscope tube 11101. A light source device 11203 is connected to the endoscope 11100, and the light generated by the light source device 11203 is guided to the tip of the microscope tube by a light guide extending inside the microscope tube 11101, and is irradiated through the objective lens towards the object to be observed inside the body cavity of the patient 11132. The endoscope 11100 may be a straight-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0213] The camera head 11102 contains an optical system and an image sensor. Reflected light from the object being observed (observation light) is focused onto the image sensor by the optical system. The image sensor converts the observation light into electrical signals, generating an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. This image signal is transmitted as RAW data to the camera control unit (CCU) 11201.

[0214] The CCU 11201 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), and other components, and comprehensively controls the operation of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102 and performs various image processing operations on that image signal, such as development processing (demosaic processing), to display the image based on that image signal.

[0215] The display device 11202 displays an image based on an image signal that has been processed by the CCU 11201, under control from the CCU 11201.

[0216] The light source device 11203 consists of a light source such as an LED (Light Emitting Diode) and supplies illumination light to the endoscope 11100 when photographing the surgical area, etc.

[0217] The input device 11204 is an input interface for the endoscopic surgical system 11000. The user can input various types of information and instructions to the endoscopic surgical system 11000 via the input device 11204. For example, the user can input instructions to change the imaging conditions (type of light, magnification, focal length, etc.) of the endoscope 11100.

[0218] The treatment instrument control device 11205 controls the drive of the energy treatment instrument 11112 for purposes such as tissue cauterization, incision, or blood vessel sealing. The insufflation device 11206 injects gas into the body cavity of the patient 11132 via the insufflation tube 11111 to inflate the body cavity for the purpose of securing a field of view by the endoscope 11100 and securing the operator's workspace. The recorder 11207 is a device capable of recording various information related to the surgery. The printer 11208 is a device capable of printing various information related to the surgery in various formats such as text, images, or graphs.

[0219] The light source device 11203 that supplies illumination light to the endoscope 11100 when photographing the surgical area can be configured as a white light source consisting of, for example, an LED, a laser light source, or a combination thereof. When the white light source is configured as a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so the white balance of the captured image can be adjusted in the light source device 11203. In this case, it is also possible to capture images corresponding to each of the RGB colors in time-division by irradiating the observation target with laser light from each of the RGB laser light sources in time-division and controlling the drive of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter on the image sensor.

[0220] Furthermore, the light source device 11203 may be controlled to change the intensity of the light it outputs at predetermined time intervals. By controlling the drive of the image sensor of the camera head 11102 in synchronization with the timing of the change in light intensity, images can be acquired in time-division order, and these images can be combined to generate high dynamic range images without so-called black crushing and white clipping.

[0221] Furthermore, the light source device 11203 may be configured to supply light in a predetermined wavelength band corresponding to special light observation. In special light observation, for example, by utilizing the wavelength dependence of light absorption in body tissue and irradiating with narrow-band light compared to the irradiation light used in normal observation (i.e., white light), so-called narrow-band imaging is performed to image predetermined tissues such as blood vessels on the surface of mucosa with high contrast. Alternatively, in special light observation, fluorescence observation may be performed to obtain an image from fluorescence generated by irradiation with excitation light. In fluorescence observation, excitation light is irradiated onto body tissue and fluorescence from the body tissue is observed (autofluorescence observation), or a reagent such as indocyanine green (ICG) is injected into body tissue and excitation light corresponding to the fluorescence wavelength of the reagent is irradiated onto the body tissue to obtain a fluorescence image. The light source device 11203 may be configured to supply narrow-band light and / or excitation light corresponding to such special light observation.

[0222] Figure 36 is a block diagram showing an example of the functional configuration of the camera head 11102 and CCU 11201 shown in Figure 35.

[0223] The camera head 11102 includes a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other via a transmission cable 11400 so that they can communicate with each other.

[0224] The lens unit 11401 is an optical system provided at the connection point with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and then incident on the lens unit 11401. The lens unit 11401 is composed of a combination of multiple lenses, including a zoom lens and a focus lens.

[0225] The imaging unit 11402 is composed of image sensors. The imaging unit 11402 may consist of one image sensor (a so-called single-chip type) or multiple image sensors (a so-called multi-chip type). If the imaging unit 11402 is composed of multiple chips, for example, each image sensor may generate image signals corresponding to RGB, and these may be combined to obtain a color image. Alternatively, the imaging unit 11402 may be configured to have a pair of image sensors for acquiring image signals for the right eye and left eye, respectively, corresponding to 3D (Dimensional) display. By performing 3D display, the surgeon 11131 can more accurately grasp the depth of the biological tissue in the surgical area. In addition, if the imaging unit 11402 is composed of multiple chips, multiple lens units 11401 may also be provided corresponding to each image sensor.

[0226] Furthermore, the imaging unit 11402 does not necessarily have to be located on the camera head 11102. For example, the imaging unit 11402 may be located inside the lens barrel 11101, directly behind the objective lens.

[0227] The drive unit 11403 is composed of actuators and, under control from the camera head control unit 11405, moves the zoom lens and focus lens of the lens unit 11401 along the optical axis by a predetermined distance. This allows the magnification and focus of the image captured by the imaging unit 11402 to be adjusted as appropriate.

[0228] The communication unit 11404 is composed of communication devices for sending and receiving various types of information with the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.

[0229] Furthermore, the communication unit 11404 receives a control signal from the CCU 11201 to control the drive of the camera head 11102 and supplies it to the camera head control unit 11405. The control signal includes information about imaging conditions, such as information to specify the frame rate of the captured image, information to specify the exposure value at the time of imaging, and / or information to specify the magnification and focus of the captured image.

[0230] The imaging conditions such as frame rate, exposure value, magnification, and focus may be specified by the user as appropriate, or they may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the endoscope 11100 will be equipped with so-called AE (Auto Exposure), AF (Auto Focus), and AWB (Auto White Balance) functions.

[0231] The camera head control unit 11405 controls the drive of the camera head 11102 based on the control signal received from the CCU 11201 via the communication unit 11404.

[0232] The communication unit 11411 is comprised of a communication device for sending and receiving various types of information with the camera head 11102. The communication unit 11411 receives image signals transmitted from the camera head 11102 via the transmission cable 11400.

[0233] Furthermore, the communication unit 11411 transmits control signals to the camera head 11102 to control the driving of the camera head 11102. Image signals and control signals can be transmitted by telecommunications, optical communications, etc.

[0234] The image processing unit 11412 performs various image processing operations on the image signal, which is RAW data transmitted from the camera head 11102.

[0235] The control unit 11413 performs various controls related to imaging the surgical area, etc., by the endoscope 11100, and the display of the images obtained from imaging the surgical area, etc. For example, the control unit 11413 generates a control signal to control the driving of the camera head 11102.

[0236] Furthermore, the control unit 11413 displays the captured image showing the surgical area, etc., on the display device 11202 based on the image signal processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition technologies. For example, the control unit 11413 can recognize surgical instruments such as forceps, specific biological sites, bleeding, mist when using the energy treatment device 11112, etc., by detecting the shape and color of the edges of objects included in the captured image. When the control unit 11413 displays the captured image on the display device 11202, it may use the recognition results to superimpose various surgical support information onto the image of the surgical area. By superimposing the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced, and the surgeon 11131 can proceed with the surgery reliably.

[0237] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable compatible with electrical signal communication, an optical fiber compatible with optical communication, or a composite cable thereof.

[0238] In the illustrated example, communication was performed via a wired connection using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may be performed wirelessly.

[0239] The above describes an example of an endoscopic surgical system to which the technology described herein may be applied. The technology described herein can be suitably applied, for example, to the imaging unit 11402 provided on the camera head 11102 of the endoscope 11100. By applying the technology described herein to the imaging unit 11402, it becomes possible to provide a high-definition endoscope 11100.

[0240] Although the present disclosure has been described above with reference to embodiments, modifications, application examples, and application examples, the present technology is not limited to the above embodiments, and various modifications are possible. For example, although the above modifications were described as modifications of the above embodiments, the configurations of each modification can be combined as appropriate.

[0241] In the embodiments described above, an imaging device was used as an example; however, the light detection device of this disclosure may be any device that receives incident light and converts the light into an electric charge. The output signal may be an image information signal or a distance measurement information signal. The light detection device (imaging device) can be applied to an image sensor, a distance measurement sensor, etc. Furthermore, this disclosure is not limited to back-illuminated image sensors, but is also applicable to front-illuminated image sensors.

[0242] The light detection device according to this disclosure can also be used as a distance measuring sensor capable of measuring distance using the TOF (Time Of Flight) method. The light-receiving element (photoelectric conversion unit) of each pixel may be an APD (Avalanche Photo Diode). The light-receiving element may be composed of, for example, a SPAD (Single Photon Avalanche Diode). The light detection device (imaging device) can also be used as a sensor capable of detecting events, for example, an event-driven sensor (also called an EVS (Event Vision Sensor), EDS (Event Driven Sensor), DVS (Dynamic Vision Sensor), etc.).

[0243] An optical detection device according to one embodiment of the present disclosure comprises: an optical layer having a plurality of structures; a semiconductor layer; a first pixel including a first photoelectric conversion element provided on the semiconductor layer and a first filter provided between the optical layer and the first photoelectric conversion element that transmits light in a first wavelength range; a second pixel including a second photoelectric conversion element provided on the semiconductor layer and a second filter provided between the optical layer and the second photoelectric conversion element that transmits light in a second wavelength range; a first spacer provided between the optical layer and the first filter; and a second spacer provided between the optical layer and the second filter. This makes it possible to realize an optical detection device capable of improving sensitivity.

[0244] The effects described herein are merely examples and are not limited to those described herein; other effects may also exist. Furthermore, this disclosure may also take the following configurations: (1) A photodetector comprising: an optical layer having a plurality of structures; a semiconductor layer; a first pixel including a first photoelectric conversion element provided on the semiconductor layer and a first filter provided between the optical layer and the first photoelectric conversion element that transmits light in a first wavelength range; a second pixel including a second photoelectric conversion element provided on the semiconductor layer and a second filter provided between the optical layer and the second photoelectric conversion element that transmits light in a second wavelength range; a first spacer provided between the optical layer and the first filter; and a second spacer provided between the optical layer and the second filter. (2) The photodetector according to (1), wherein the optical layer guides light in the first wavelength range from incident light to the first filter and light in the second wavelength range to the second filter. (3) The photodetector according to (1) or (2), wherein the thickness of the first spacer is different from the thickness of the second spacer. (4) The photodetector according to any one of (1) to (3), further comprising a filter layer including the first filter and the second filter, and a spacer layer including the first spacer and the second spacer, wherein the thickness of the spacer layer in the first pixel is different from the thickness of the spacer layer in the second pixel. (5) The photodetector according to any one of (1) to (4), wherein the first spacer and the second spacer are provided integrally. (6) The photodetector according to any one of (1) to (5), wherein the plurality of structures include a first structure provided for the first pixel and a second structure provided for the second pixel, the semiconductor layer having a first surface and a second surface opposite to the first surface, and the distance from the first surface of the semiconductor layer to the lower end of the first structure is different from the distance from the first surface of the semiconductor layer to the lower end of the second structure.(7) The photodetector according to any one of (1) to (6), wherein the first photoelectric conversion element receives light in the blue wavelength range as light in the first wavelength range via the first filter, and the second photoelectric conversion element receives light in the green wavelength range or light in the red wavelength range as light in the second wavelength range via the second filter. (8) The photodetector according to any one of (1) to (7), wherein the thickness of the first spacer is greater than the thickness of the second spacer. (9) The photodetector according to any one of (1) to (8), wherein the thickness of the end of the first filter is less than the thickness of the central part of the first filter. (10) The photodetector according to any one of (1) to (9), wherein the first filter has a convex shape. (11) The photodetector according to any one of (1) to (10), wherein the end of the first filter has a concave shape. (12) The photodetector according to any one of (1) to (11), wherein the thickness of the edge of the second filter is smaller than the thickness of the central part of the second filter. (13) The photodetector according to any one of (1) to (12), wherein the width of the first filter is different from the width of the second filter. (14) The photodetector according to any one of (1) to (13), wherein the first pixel and the second pixel are located adjacent to each other in a first direction, and the width of the first filter in the first direction is different from the width of the second filter in the first direction. (15) The photodetector according to any one of (1) to (14), wherein the first photoelectric conversion element receives light in the blue wavelength range as light in the first wavelength range via the first filter, and the second photoelectric conversion element receives light in the green wavelength range or light in the red wavelength range as light in the second wavelength range via the second filter, and the width of the first filter is larger than the width of the second filter. (16) The light detection device according to any one of (1) to (15), further comprising a light guide member provided between the first filter and the second filter, wherein the refractive index of the light guide member is lower than the refractive index of the first filter.(17) The photodetector according to any one of (1) to (16), further comprising: a third pixel including a third photoelectric conversion element provided in the semiconductor layer; a third filter provided between the optical layer and the third photoelectric conversion element and transmitting light in a third wavelength range; and a third spacer provided between the optical layer and the third filter, wherein the thickness of the first spacer is different from the thickness of the third spacer. (18) The photodetector according to any one of (1) to (17), wherein the optical layer has a member provided around the structure, and the structure has a refractive index different from the refractive index of the member. (19) The photodetector according to any one of (1) to (18), wherein the optical layer has a first layer on which the structure is provided and a second layer on which the structure is provided and laminated on the first layer. (20) Electronic device comprising an optical system and a photodetector that receives light transmitted through the optical system, wherein the photodetector comprises an optical layer having a plurality of structures, a semiconductor layer, a first pixel including a first photoelectric conversion element provided on the semiconductor layer and a first filter provided between the optical layer and the first photoelectric conversion element that transmits light in a first wavelength range, a second pixel including a second photoelectric conversion element provided on the semiconductor layer and a second filter provided between the optical layer and the second photoelectric conversion element that transmits light in a second wavelength range, a first spacer provided between the optical layer and the first filter, and a second spacer provided between the optical layer and the second filter.

[0245] This application claims priority based on Japanese Patent Application No. 2024-232436, filed with the Japan Patent Office on 27 December 2024, and all contents of that application are incorporated herein by reference.

[0246] Those skilled in the art will understand that various modifications, combinations, subcombinations, and changes can be conceived depending on design requirements and other factors, and that these fall within the scope of the attached claims and their equivalents.

Claims

1. A light detection device comprising: an optical layer having multiple structures; a semiconductor layer; a first pixel including a first photoelectric conversion element provided on the semiconductor layer and a first filter provided between the optical layer and the first photoelectric conversion element that transmits light in a first wavelength range; a second pixel including a second photoelectric conversion element provided on the semiconductor layer and a second filter provided between the optical layer and the second photoelectric conversion element that transmits light in a second wavelength range; a first spacer provided between the optical layer and the first filter; and a second spacer provided between the optical layer and the second filter.

2. The photodetector according to claim 1, wherein the optical layer guides light in the first wavelength range of the incident light to the first filter and light in the second wavelength range to the second filter.

3. The photodetector according to claim 1, wherein the thickness of the first spacer is different from the thickness of the second spacer.

4. The photodetector according to claim 1, further comprising a filter layer including the first filter and the second filter, and a spacer layer including the first spacer and the second spacer, wherein the thickness of the spacer layer in the first pixel is different from the thickness of the spacer layer in the second pixel.

5. The photodetector according to claim 1, wherein the first spacer and the second spacer are provided integrally.

6. The photodetector according to claim 1, wherein the plurality of structures include a first structure provided for the first pixel and a second structure provided for the second pixel, the semiconductor layer has a first surface and a second surface opposite to the first surface, and the distance from the first surface of the semiconductor layer to the lower end of the first structure is different from the distance from the first surface of the semiconductor layer to the lower end of the second structure.

7. The photodetector according to claim 1, wherein the first photoelectric conversion element receives light in the blue wavelength range as light in the first wavelength range via the first filter, and the second photoelectric conversion element receives light in the green wavelength range or light in the red wavelength range as light in the second wavelength range via the second filter.

8. The photodetector according to claim 7, wherein the thickness of the first spacer is greater than the thickness of the second spacer.

9. The photodetector according to claim 1, wherein the thickness of the edge of the first filter is smaller than the thickness of the central part of the first filter.

10. The photodetector according to claim 1, wherein the first filter has a convex shape.

11. The photodetector according to claim 1, wherein the end of the first filter has a concave shape.

12. The photodetector according to claim 9, wherein the thickness of the edge portion of the second filter is smaller than the thickness of the central portion of the second filter.

13. The photodetector according to claim 1, wherein the width of the first filter is different from the width of the second filter.

14. The photodetector according to claim 1, wherein the first pixel and the second pixel are located adjacent to each other in a first direction, and the width of the first filter in the first direction is different from the width of the second filter in the first direction.

15. The photodetector according to claim 1, wherein the first photoelectric conversion element receives light in the blue wavelength range as light in the first wavelength range via the first filter, the second photoelectric conversion element receives light in the green wavelength range or light in the red wavelength range as light in the second wavelength range via the second filter, and the width of the first filter is greater than the width of the second filter.

16. The photodetector according to claim 1, further comprising a light guide member provided between the first filter and the second filter, wherein the refractive index of the light guide member is lower than that of the first filter.

17. The photodetector according to claim 1, further comprising: a third photoelectric conversion element provided in the semiconductor layer; a third pixel including a third filter provided between the optical layer and the third photoelectric conversion element and transmitting light in a third wavelength range; and a third spacer provided between the optical layer and the third filter, wherein the thickness of the first spacer is different from the thickness of the third spacer.

18. The optical detection device according to claim 1, wherein the optical layer has a member provided around the structure, and the structure has a refractive index different from that of the member.

19. The optical detection device according to claim 1, wherein the optical layer comprises a first layer on which the structure is provided and a second layer on which the structure is provided and which is laminated on the first layer.

20. An electronic device comprising an optical system and a photodetector that receives light transmitted through the optical system, wherein the photodetector comprises an optical layer having a plurality of structures, a semiconductor layer, a first pixel including a first photoelectric conversion element provided on the semiconductor layer and a first filter provided between the optical layer and the first photoelectric conversion element that transmits light in a first wavelength range, a second pixel including a second photoelectric conversion element provided on the semiconductor layer and a second filter provided between the optical layer and the second photoelectric conversion element that transmits light in a second wavelength range, a first spacer provided between the optical layer and the first filter, and a second spacer provided between the optical layer and the second filter.

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