Temporary fixing film, resin composition, temporary fixing laminate, and method for manufacturing semiconductor device

Abstract

This temporary fixing film comprises a thermosetting component and an antioxidant, wherein: the thermosetting component contains (A) a hydrocarbon resin having a monomer unit derived from styrene; and the antioxidant contains (D-a) a hindered phenolic antioxidant and (D-b) a thioether-based antioxidant having an aromatic ring, or (D-c) a hindered phenolic antioxidant having a thioether bond.

Description

Temporary Fixing Film, Resin Composition, Temporary Fixing Laminate, and Method for Manufacturing Semiconductor Device

[0001] The present invention relates to a temporary fixing film, a resin composition, a temporary fixing laminate, and a method for manufacturing a semiconductor device.

[0002] In the manufacture of semiconductor elements, after incorporating an integrated circuit into a semiconductor substrate such as a semiconductor wafer or a semiconductor chip, the semiconductor member having the semiconductor substrate may be processed. The semiconductor member is subjected to processing such as back grinding or singulation by dicing. The semiconductor member is usually processed while temporarily fixed to a support member, and then the semiconductor member is separated from the support member. For example, Patent Documents 1 and 2 disclose a method of separating a semiconductor member from a support member by irradiating a temporary fixing material layer with light (laser light).

[0003] Japanese Unexamined Patent Application Publication No. 2016-138182, Japanese Unexamined Patent Application Publication No. 2013-033814

[0004] With the recent improvement in performance of electronic components, not only has the performance been improved by miniaturization of semiconductor elements, but also a method of combining a plurality of semiconductor chips to improve performance has been adopted. As a method of combining a plurality of semiconductor chips, a process of overlapping and electrically connecting a plurality of semiconductor wafers by hybrid bonding and then singulating them (also referred to as "wafer to wafer") or a process of three-dimensionally stacking and electrically connecting a plurality of singulated semiconductor chips on a semiconductor wafer (also referred to as "chip to wafer") has been particularly noted in recent years. In these processes, after forming through holes in the semiconductor wafer or semiconductor chip, it is necessary to electrically connect electrodes called TSVs (Through Silicon Vias) formed by filling the holes with copper. At this time, in order to reduce the electrical resistance at the bonding interface between the TSVs, a copper annealing process for applying heat exceeding 300°C to solid-phase diffuse copper atoms is required. Therefore, the temporary fixing material used in the above mounting process is required to have high heat resistance.

[0005] The present invention aims to provide a temporary fixing film and resin composition that can form a temporary fixing material with excellent heat resistance, as well as a method for manufacturing a temporary fixing laminate and a semiconductor device using these.

[0006] To solve the above problems, the present inventors focused on hydrocarbon resins that can have soft segments that exhibit the properties required for temporary fixing materials of semiconductor components (embedding ability, adhesion, and release ability) as resins to be blended into temporary fixing films, and investigated how to improve the heat resistance of resin compositions containing these hydrocarbon resins. As a result, they found that by combining a hydrocarbon resin having a specific hard segment with a specific antioxidant, it is possible to raise the thermal decomposition temperature of the temporary fixing material to above a predetermined temperature, and thus completed the present invention.

[0007] The present invention includes the following aspects: [1] A temporary fixing film used for temporarily fixing a semiconductor member and a support member, comprising a thermosetting component and an antioxidant, wherein the thermosetting component comprises (A) a hydrocarbon resin having monomer units derived from styrene, and the antioxidant comprises (D-a) a hindered phenol antioxidant and (D-b) a thioether antioxidant having an aromatic ring, or (D-c) a hindered phenol antioxidant having a thioether bond. [2] The temporary fixing film according to [1], wherein component (A) is a hydrocarbon resin modified with maleic anhydride. [3] The temporary fixing film according to [1] or [2], wherein the thermosetting component further comprises (B) an epoxy resin. [4] A resin composition used for temporarily fixing a semiconductor member and a support member, comprising a thermosetting component and an antioxidant, wherein the thermosetting component comprises (A) a hydrocarbon resin having monomer units derived from styrene, and the antioxidant comprises (D-a) a hindered phenol antioxidant and (D-b) a thioether antioxidant having an aromatic ring, or (D-c) a hindered phenol antioxidant having a thioether bond. [5] The resin composition according to [4], wherein the component (A) is a hydrocarbon resin modified with maleic anhydride. [6] The resin composition according to [4] or [5], wherein the thermosetting component further comprises (B) an epoxy resin. [7] A temporary fixing laminate comprising, in this order, a support member, a light absorbing layer, and a temporary fixing material layer consisting of a temporary fixing film or cured product thereof according to any one of [1] to [3], or a resin composition or cured product thereof according to any one of [4] to [6]. A method for manufacturing a semiconductor device, comprising the steps of: preparing a temporary fixing laminate as described in [8] [7]; temporarily fixing a semiconductor member to the support member via the temporary fixing material layer; processing the semiconductor member temporarily fixed to the support member; and irradiating the light-absorbing layer of the temporary fixing laminate with light from the support member side to separate the semiconductor member from the support member.

[0008] The temporary fixing film described in [1] and the resin composition described in [4] can form a temporary fixing material with excellent heat resistance. The inventors speculate that the reason for obtaining such an effect is as follows. First, in hydrocarbon resins having monomer units derived from styrene, the vicinity of the styrene-derived structure (also called the styrene portion) in the main chain is likely to be the starting point for thermal decomposition. Here, the inventors believe that a hindered phenol-based antioxidant having a structure with excellent affinity for the styrene portion and a thioether-based antioxidant having an aromatic ring are likely to be present near the styrene portion, and the former can function efficiently as a chain arrester, while the latter can efficiently decompose peroxides that could not be controlled by the former as a peroxide decomposer, thereby obtaining a high thermal decomposition suppression effect. Furthermore, it is thought that the hindered phenol-based antioxidant having a thioether bond is also present near the styrene portion in the same manner as above, and can efficiently exhibit both chain arrester and peroxide decomposition functions, thereby obtaining a high thermal decomposition suppression effect.

[0009] According to the present invention, it is possible to provide a temporary fixing film and resin composition that can form a temporary fixing material with excellent heat resistance, as well as a temporary fixing laminate and a method for manufacturing a semiconductor device using these.

[0010] Figure 1 is a schematic cross-sectional view showing one embodiment of a temporary fixing film. Figure 2 is a schematic cross-sectional view showing one embodiment of a temporary fixing laminate. Figures 3(a) and 3(b) are schematic cross-sectional views showing one embodiment of a method for manufacturing a temporary fixing laminate. Figures 4(a) and 4(b) are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device. Figures 5(a), 5(b), and 5(c) are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device. Figures 6(a) and 6(b) are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device.

[0011] Embodiments of the present disclosure will be described below with reference to the drawings as appropriate. However, the present disclosure is not limited to the following embodiments. In the following embodiments, the components (including steps, etc.) are not essential unless otherwise specified. The sizes of the components in each figure are conceptual, and the relative relationships of the sizes of the components are not limited to those shown in each figure.

[0012] The same applies to numerical values ​​and their ranges in this disclosure, and this disclosure is not limited. Numerical ranges indicated using “~” in this specification include the numerical values ​​before and after “~” as the minimum and maximum values, respectively. In numerical ranges described in stages in this specification, the upper or lower limit of one numerical range may be replaced by the upper or lower limit of another numerical range described in stages. Also, in numerical ranges described in this specification, the upper or lower limit of that numerical range may be replaced by the values ​​shown in the examples (manufacturing examples).

[0013] In this specification, the term "layer" includes not only structures that are formed across the entire surface when observed in a plan view, but also structures that are formed in only a part of the surface. Furthermore, in this specification, the term "process" includes not only independent processes, but also processes that cannot be clearly distinguished from other processes, as long as their intended function is achieved.

[0014] In this specification, (meth)acrylate means acrylate or the corresponding methacrylate. The same applies to other similar expressions such as (meth)acryloyl group and (meth)acrylic copolymer.

[0015] In this specification, unless otherwise specified, the materials exemplified below may be used individually or in combination of two or more, to the extent that the conditions are met. The content of each component refers to the total amount of multiple substances corresponding to each component, unless otherwise specified.

[0016] [Resin Composition] The resin composition of this embodiment contains a thermosetting component and an antioxidant, wherein the thermosetting component includes a hydrocarbon resin having monomer units derived from (A) styrene (hereinafter sometimes referred to as component (A)). A hydrocarbon resin means a resin whose main skeleton is composed of hydrocarbons.

[0017] (A) Examples of component (A) include styrene-ethylene-butylene-styrene block copolymer (SEBS), styrene-ethylene-propylene-ethylene block copolymer (SEPS), and styrene-isobutylene-styrene (SIBS), as well as modified versions thereof. Component (A) can be used individually or in combination of two or more.

[0018] The monomer unit content of component (A) may be 5.0 to 50.0% by mass, or 10.0 to 30.0% by mass, based on the total amount of component (A). When the monomer unit content of styrene is within this range, it becomes easier to adjust the storage modulus of the film formed from the resin composition to a desired range. This makes it easier to achieve both fixing and peeling of semiconductor members when forming a temporary fixing layer using the resin composition, and in addition, the thermal decomposition suppression effect according to the present invention described above tends to be significantly exhibited. When two or more types of component (A) are used in combination, the total amount of monomer units derived from styrene may be within the above range, based on the total amount of component (A).

[0019] (A) Component may be hydrogenated.

[0020] Component (A) may have reactive groups such as acid anhydride groups, amino groups, phenolic hydroxyl groups, thiol groups, imidazole groups, and azide groups because it is thermosetting.

[0021] Component (A) may be carboxylated with maleic anhydride.

[0022] The Tg of component (A) may be -100 to 500°C, -50 to 300°C, or -50 to 50°C. When the Tg of component (A) is within the above range, it tends to be easier to ensure the flexibility of the film when a film is formed from the resin composition, and the low-temperature lamination properties of the film can be improved.

[0023] In this specification, the Tg of a thermoplastic resin is the intermediate glass transition temperature obtained by differential scanning calorimetry (DSC). Specifically, the Tg of a thermoplastic resin is the intermediate glass transition temperature calculated by measuring the change in heat quantity under the conditions of a heating rate of 10°C / min and a measurement temperature of -80 to 80°C, in accordance with the method compliant with JIS K7121:2012.

[0024] The weight-average molecular weight (Mw) of component (A) may be 10,000 to 5,000,000 or 100,000 to 2,000,000. When the weight-average molecular weight of component (A) is within the above range, it becomes easier to suppress the decrease in flow and the decrease in adhesiveness when a film is formed from the resin composition.

[0025] In this specification, the weight-average molecular weight of the resin is expressed as a polystyrene-converted value using a calibration curve based on standard polystyrene obtained by gel permeation chromatography (GPC).

[0026] The content of component (A) may be 40% by mass or more, 45% by mass or more, or 100% by mass, based on the total amount of thermoplastic resin contained in the resin composition. When the content of component (A) is within the above range, it is easy to improve the thin-film-forming properties of the resin composition and the flatness of the film formed by the resin composition, and in addition, the thermal decomposition suppression effect according to the present invention described above is more easily obtained, and the effects of the present invention tend to be significantly exhibited.

[0027] Furthermore, the content of component (A) may be 30% by mass or more, 40% by mass or more, or 45% by mass or more, based on the total amount of the resin composition, from the same viewpoint as described above.

[0028] The resin composition of this embodiment may also contain thermoplastic resins other than component (A). Examples of other thermoplastic resins include polycarbonate, polyphenylene sulfide, polyethersulfone, polyetherimide, polyimide, petroleum resin, novolac resin, and the like.

[0029] The resin composition of this embodiment may contain thermosetting components other than component (A) as thermosetting components. Examples of thermosetting components other than component (A) include epoxy resins, acrylic resins, silicone resins, phenolic resins, thermosetting polyimide resins, polyurethane resins, melamine resins, urea resins, and the like.

[0030] The resin composition of this embodiment may contain (B) epoxy resin (hereinafter sometimes referred to as component (B)) as a thermosetting resin, from the viewpoint of heat resistance, workability, and reliability.

[0031] Component (B) can be any compound having two or more epoxy groups in its molecule, and examples include alicyclic epoxy resins such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, biphenyl type epoxy resin, biphenyl novolac type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolac type epoxy resin, bisphenol F novolac type epoxy resin, dicyclopentadiene type epoxy resin, aliphatic chain epoxy resin, triphenylmethane type epoxy resin, glycidyl ester type epoxy resin, isocyanurate type epoxy resin, hydantoin type epoxy resin, glycidyl ether compounds of polyfunctional phenols, glycidyl ether compounds of difunctional alcohols, and hydrogenated versions thereof. Component (B) can be used alone or in combination of two or more.

[0032] The content of component (B) may be 70 parts by mass or less, or 60 parts by mass or less, per 100 parts by mass of component (A), and may be 10 to 70 parts by mass, 15 to 60 parts by mass, or 20 to 55 parts by mass.

[0033] The resin composition of this embodiment may further contain a curing accelerator (hereinafter sometimes referred to as component (C)) that promotes the curing reaction of the thermosetting resin, such as component (B). Examples of curing accelerators include imidazole derivatives, dicyandiamide derivatives, dicarboxylic acid dihydrazides, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, and 1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate.

[0034] The content of the curing accelerator may be 0.01 to 5% by mass, based on the total amount of thermosetting resin contained in the resin composition. When the content of the curing accelerator is within this range, the curability of the thermosetting resin and the heat resistance after curing tend to be better. From the viewpoint of making it easier to adjust the storage modulus of the resin composition after curing, the content of the curing accelerator may be 1.0% by mass or more, 1.2% by mass or more, or 1.5% by mass or more, or 3.0% by mass or less, 2.5% by mass or less, or 2.0% by mass or less, based on the total amount of thermosetting resin.

[0035] The resin composition of this embodiment may further contain a polymerizable monomer and a polymerization initiator as thermosetting components other than the thermosetting resin described above. The polymerizable monomer is not particularly limited as long as it polymerizes by heating or irradiation with ultraviolet light or the like. From the viewpoint of material selectivity and availability, the polymerizable monomer may be a compound having a polymerizable functional group such as an ethylenically unsaturated group. Examples of polymerizable monomers include (meth)acrylate, vinylidene halide, vinyl ether, vinyl ester, vinylpyridine, vinyl amide, aryl vinyl, etc. Among these, the polymerizable monomer may be (meth)acrylate. The (meth)acrylate may be monofunctional, difunctional, or trifunctional or more, but from the viewpoint of obtaining sufficient curability, it may be a (meth)acrylate with two or more functions.

[0036] The polymerizable monomer content may be 0 to 50 parts by mass per 100 parts by mass of component (A).

[0037] The polymerization initiator is not particularly limited as long as it initiates polymerization by heating or irradiation with ultraviolet light or the like. For example, when a compound having an ethylenically unsaturated group is used as the polymerizable monomer, the polymerization initiator may be a thermal radical polymerization initiator or a photoradical polymerization initiator.

[0038] The content of the polymerization initiator may be 0.01 to 5 parts by mass per 100 parts by mass of polymerizable monomer.

[0039] From the viewpoint of obtaining high heat resistance, the resin composition of this embodiment may contain, as an antioxidant, (D-a) a hindered phenol antioxidant (hereinafter sometimes referred to as component (D-a)) and (D-b) a thioether antioxidant having an aromatic ring (hereinafter sometimes referred to as component (D-b)), or (D-c) a hindered phenol antioxidant having a thioether bond (hereinafter sometimes referred to as component (D-c)).

[0040] As the component (D-a), 4-methoxyphenol, 4-t-butylcatechol, pentaerythritol tetrakis[3-(3',5'-di-t-butyl-4'-hydroxyphenyl)propionate], 2,2'-methylenebis(6-tert-butyl-p-cresol), 2,4,6-tris(3',5'-di-tert-butyl-4'-hydroxybenzyl)mesitylene, tris(3,5-di-tert-butyl-4-hydroxybenzyl)isocyanurate, 1,1,3-tris(2-hydroxy-5-tert-butylphenyl)butane, 4,4'-butylidenebis(6-tert-butyl-m-cresol), n-octadecyl 3-(3'-5'-di-tert-4'-hydroxyphenyl)propionate, 3,9-bis{2-[3-(3-tert-butyl-4-hydroxy-5-methylphenyl)propionyloxy]-1,1-dimethylethyl}-2,4,8,10-tetraoxaspiro[5.5]undecane, N,N'-hexamethylenebis[3-(3,5-di-tert-butyl-4-hydroxyphenyl)propanamide, bis[3-(3-tert-butyl-4-hydroxy-5-methylphenyl)propionate][ethylenebis(oxyethylene)], 1,6-hexanediol bis[3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate] and the like can be mentioned. The hindered phenol-based antioxidant may be used alone or in combination of two or more kinds.

[0041] As the above-mentioned antioxidant, various commercially available products can also be used. Examples of the commercially available products include AdekaStab AO-60, AdekaStab AO-80, AdekaStab AO-330, AdekaStab AO-20, AdekaStab AO-30 manufactured by ADEKA Corporation; Irganox 1010, Irganox 1076, Irganox 1135 manufactured by BASF Japan Ltd.

[0042] Among these, the hindered phenol-based antioxidant may be at least one selected from pentaerythritol tetrakis[3-(3',5'-di-t-butyl-4'-hydroxyphenyl)propionate], n-octadecyl 3-(3'-5'-di-tert-4'-hydroxyphenyl)propionate, and 3,9-bis{2-[3-(3-tert-butyl-4-hydroxy-5-methylphenyl)propionyloxy]-1,1-dimethylethyl}-2,4,8,10-tetraoxaspiro[5.5]undecane from the viewpoint of expressing the chain termination function.

[0043] Examples of the component (D-b) include a mixture containing 4,4'-thiobis(6-t-butyl-3-methylphenol) and 2-tert-butyl-4-[(5-tert-butyl-4-hydroxy-2-methylphenyl)sulfanyl]-5-methylphenyl 3-(dodecylsulfanyl)propanoate. The thioether-based antioxidant having an aromatic ring may be used alone or in combination of two or more.

[0044] As the above-mentioned antioxidant, various commercially available products can also be used. Examples of the commercially available products include Adeka Stab AO-26 manufactured by ADEKA Corporation.

[0045] Examples of the component (D-c) include 4,6-bis(octylthiomethyl)-o-cresol and thiodiethylene-bis[3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate]. The hindered phenol-based antioxidant having a thioether bond may be used alone or in combination of two or more.

[0046] As the above-mentioned antioxidant, various commercially available products can also be used. Examples of the commercially available products include Irganox 1520L and Irganox 1035 manufactured by BASF Japan Ltd.

[0047] When the resin composition contains the component (D-a) and the component (D-b), the content of the component (D-a) may be 0.1 to 10.0 parts by mass, 0.2 to 5.0 parts by mass, or 0.3 to 3.0 parts by mass with respect to 100 parts by mass of the component (A).

[0048] If the resin composition contains component (D-a) and component (D-b), the content of component (D-b) may be 0.1 to 10.0 parts by mass, 0.2 to 5.0 parts by mass, or 0.3 to 3.0 parts by mass per 100 parts by mass of component (A).

[0049] If the resin composition contains component (D-a) and component (D-b), the total content of component (D-a) and component (D-b) may be 0.2 to 20.0 parts by mass, 0.4 to 10.0 parts by mass, or 0.5 to 6.0 parts by mass per 100 parts by mass of component (A).

[0050] If the resin composition contains component (D-c), the content of component (D-c) may be 0.2 to 20.0 parts by mass, 0.4 to 10.0 parts by mass, or 0.5 to 6.0 parts by mass per 100 parts by mass of component (A).

[0051] The resin composition of this embodiment may further contain additives such as insulating fillers, sensitizers, and antioxidants other than components (D-a), (D-b), and (D-c).

[0052] Insulating fillers may be added to resin compositions to impart properties such as low thermal expansion and low hygroscopicity. Examples of insulating fillers include non-metallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, and ceramics. From the viewpoint of dispersibility with solvents, insulating fillers may be particles whose surfaces are treated with a surface treatment agent. The surface treatment agent may be, for example, a silane coupling agent.

[0053] The content of the insulating filler may be 0.1 to 20% by mass, based on the total amount of the resin composition. When the content of the insulating filler is within this range, there is a tendency to further improve heat resistance without hindering light transmission. Furthermore, when the content of the insulating filler is within this range, it may also contribute to easy peelability.

[0054] Examples of sensitizers include anthracene, phenanthrene, chrysene, benzopyrene, fluorantene, rubrene, pyrene, xanthon, indanthrene, thioxanthene-9-one, 2-isopropyl-9H-thioxanthene-9-one, 4-isopropyl-9H-thioxanthene-9-one, and 1-chloro-4-propoxythioxanthone.

[0055] The sensitizer content may be 0.01 to 10% by mass, based on the total amount of the resin composition. When the sensitizer content is within this range, it becomes easier to obtain the desired sensitizing effect while minimizing the impact on the properties of the resin composition (particularly its thin-film-forming properties).

[0056] The resin composition of this embodiment can be used to temporarily fix a semiconductor member and a support member.

[0057] [Temporary Fixing Film] The temporary fixing film of this embodiment is used to temporarily fix a semiconductor member and a support member. Figure 1 is a schematic cross-sectional view showing one embodiment of the temporary fixing film. The temporary fixing film 1 shown in Figure 1 is composed of a resin composition layer 6 made of the resin composition of this embodiment described above.

[0058] Furthermore, the content of each component in the resin composition layer 6 (or temporary fixing film) can be the same as that in the resin composition of this embodiment described above, and the value based on the total amount of the resin composition can be read as a value based on the total amount of the resin composition layer 6 (or temporary fixing film).

[0059] [Method for Manufacturing Temporary Fixing Film] For example, to manufacture the temporary fixing film 1, first, the resin composition of this embodiment is dissolved or dispersed by stirring, mixing, kneading, etc., in a solvent to prepare a varnish of the resin composition. Then, the varnish of the resin composition is applied to a support film that has been treated with a mold release agent using a knife coater, roll coater, applicator, comma coater, die coater, etc., and the solvent is evaporated by heating to form a temporary fixing film (resin composition layer) made of the resin composition on the support film. At this time, the thickness of the temporary fixing film (resin composition layer) can be adjusted by adjusting the amount of varnish of the resin composition applied.

[0060] The solvent used in the preparation of the resin composition varnish is not particularly limited as long as it has the property of uniformly dissolving or dispersing each component. Examples of such solvents include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonate esters such as ethylene carbonate and propylene carbonate; and amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. The concentration of solid components in the varnish may be 10 to 80% by mass based on the total mass of the varnish.

[0061] The stirring, mixing, or kneading of the resin composition during the preparation of the varnish can be carried out using, for example, a stirrer, a sloshing machine, a three-roll mill, a ball mill, a bead mill, a homodisper, or the like.

[0062] Examples of support films include polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene; and films of polycarbonate, polyamide, polyimide, polyamideimide, polyetherimide, polyether sulfide, polyethersulfone, polyetherketone, polyphenylene ether, polyphenylene sulfide, poly(meth)acrylate, polysulfone, and liquid crystal polymer. The thickness of the support film may be, for example, 1 to 250 μm.

[0063] The heating conditions for volatilizing the solvent from the varnish of the resin composition coated onto the support film can be appropriately set according to the solvent used. For example, the heating conditions may be 40 to 180°C for 0.1 to 30 minutes.

[0064] The thickness of the temporary fixing film 1 may be, for example, 0.1 μm or more, 1 μm or more, or 5 μm or more, and may be 200 μm or less, 100 μm or less, or 70 μm or less, from the viewpoint of stress relaxation.

[0065] [Temporary Fixing Laminate and Method for Manufacturing the Same] The temporary fixing laminate of this embodiment is used to temporarily fix a semiconductor member and a support member. Figure 2 is a schematic cross-sectional view showing one embodiment of the temporary fixing laminate. The temporary fixing laminate 20 shown in Figure 2 has a support member 2, a light-absorbing layer 4, and a temporary fixing material layer 6c made of the temporary fixing film 1 (resin composition layer 6) of this embodiment or a cured product thereof (for example, a heated one), in this order from the support member 2. The temporary fixing material layer 6c has a surface S on the side where the semiconductor member is placed (opposite to the light-absorbing layer 4).

[0066] The support member 2 is a plate-like body with high transmittance that can withstand the loads applied during the processing of semiconductor components. Examples of support member 2 include inorganic glass substrates and transparent resin substrates. Furthermore, if light including infrared light is used during peeling, a silicon carrier substrate may be used.

[0067] The thickness of the support member 2 may be, for example, 0.1 to 2.0 mm. If the thickness of the support member 2 is 0.1 mm or more, handling tends to be easier. If the thickness of the support member 2 is 2.0 mm or less, material costs tend to be reduced.

[0068] The light-absorbing layer 4 is a layer that absorbs light and generates heat. The light-absorbing layer 4 may be, for example, a conductive layer containing a conductor that absorbs light and generates heat. Examples of conductors constituting the conductive layer include metals, metal oxides, and conductive carbon materials. The metal may be a single metal such as chromium, copper, titanium, silver, platinum, or gold, or an alloy such as nickel-chromium, stainless steel, or copper-zinc. Examples of metal oxides include indium tin oxide (ITO), zinc oxide, and niobium oxide. The conductor may be chromium, titanium, or a conductive carbon material. The light-absorbing layer 4 may be, for example, a conductive resin layer containing a conductor that absorbs light and generates heat, and a resin.

[0069] The light-absorbing layer 4 may be a single or multiple metal layer, for example, a metal layer consisting of a copper layer and a titanium layer.

[0070] If the light-absorbing layer 4 is a single layer of metal, the light-absorbing layer 4 may contain at least one metal selected from the group consisting of tantalum (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), chromium (Cr), copper (Cu), aluminum (Al), silver (Ag), and gold (Au). These metals may be included in the light-absorbing layer 4 as an alloy.

[0071] The light-absorbing layer 4 is composed of two layers, a first layer and a second layer, and may be laminated in the order of the first layer and the second layer from the support member 2 side. In this case, for example, if the first layer has high light absorption and the second layer has a high coefficient of thermal expansion and a high modulus of elasticity, good peelability tends to be easily obtained. From this viewpoint, the first layer of the light-absorbing layer 4 may contain at least one metal selected from the group consisting of tantalum (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), and chromium (Cr), and the second layer of the light-absorbing layer 4 may contain at least one metal selected from the group consisting of copper (Cu), aluminum (Al), silver (Ag), and gold (Au). These metals may be included in the first and second layers as an alloy.

[0072] The thickness of the light-absorbing layer 4 may be 1 to 5000 nm, 100 to 3000 nm, or 50 to 300 nm from the viewpoint of easy peelability. If the light-absorbing layer 4 is a single layer or a metal layer consisting of multiple layers, the thickness of the light-absorbing layer 4 (or metal layer) may be 75 nm or more, 90 nm or more, or 100 nm or more, and may be 1000 nm or less, 800 nm or less, 500 nm or less, or 300 nm or less from the viewpoint of good peelability. If the light-absorbing layer 4 is a single layer metal layer, the thickness of the light-absorbing layer 4 (or metal layer) may be 100 nm or more, 125 nm or more, 150 nm or more, or 200 nm or more, and may be 1000 nm or less, 800 nm or less, or 500 nm or less from the viewpoint of good peelability. If the light-absorbing layer 4 is a conductor-containing resin layer, the thickness of the light-absorbing layer 4 may be 1 to 50 μm, 1 μm or more, 5 μm or more, or 10 μm or more, and 50 μm or less, 30 μm or less, or 20 μm or less.

[0073] The temporary fixing layer 6c consists of the temporary fixing film 1 (resin composition layer 6) of this embodiment or its cured product (for example, a heated product). The following describes the case where the temporary fixing layer 6c is a cured product.

[0074] Figures 3(a) and 3(b) are schematic cross-sectional views showing one embodiment of a method for manufacturing a temporary fixing laminate. The temporary fixing laminate 20 can be obtained, for example, by a method that includes the steps of: preparing a laminate precursor 10 having a support member 2, a light-absorbing layer 4, and a resin composition layer 6 of this embodiment in that order from the support member 2; and heating the laminate precursor 10 and heating the resin composition layer 6 to form a temporary fixing material layer 6c.

[0075] The laminated precursor 10 can be obtained, for example, by a method including the steps of providing a light-absorbing layer 4 on a support member 2 and attaching the temporary fixing film 1 of this embodiment to the light-absorbing layer 4 to form a resin composition layer 6. In this embodiment, a pre-cured (for example, heated) temporary fixing film (temporary fixing material layer) may be attached.

[0076] The light-absorbing layer 4 can be formed on the support member 2 by physical vapor deposition (PVD) such as vacuum deposition or sputtering, or by chemical vapor deposition (CVD) such as plasma chemical deposition. Alternatively, the light-absorbing layer 4 can be formed on the support member 2 by electroplating or electroless plating. With physical vapor deposition, even if the support member 2 has a large surface area, the light-absorbing layer 4 covering the surface of the support member 2 can be efficiently formed.

[0077] Methods for attaching the temporary fixing film 1 to the light-absorbing layer 4 include, for example, roll lamination, vacuum lamination, and heat pressing. Lamination can be carried out, for example, under temperature conditions of 0 to 120°C.

[0078] Next, a temporary fixing layer 6c is formed by heating the resin composition layer 6 of the obtained laminated precursor 10. The heating conditions may be, for example, 150 to 300°C or 180 to 250°C for 1 to 180 minutes or 10 to 120 minutes. In this way, the temporary fixing layer 6c comes to contain a cured product of component (A). Furthermore, in the temporary fixing layer 6c where the resin composition layer 6 contains both component (A) and component (B), a phase separation structure is formed between component (A) and a cured product of component (B) from the resin composition containing components (A) and (B). In this case, the peel strength when separating from the support member can be adjusted by changing the content ratio of component (A) and component (B).

[0079] The temporary fixing layer 6c has a surface tack force of 9.8 × 10 at 30°C on surface S. －３ N (1.0 gf) or higher, 2.0 × 10 －３ N (1.0 gf) or higher, or 3.9 × 10 －２ N (1.0 gf) or higher may be used. The surface tack force can be increased by methods such as reducing the content of monomer units derived from styrene in component (A), lowering the molecular weight of component (A), or adjusting the type and content of component (B).

[0080] To determine the surface tack force, prepare a test specimen similar to that used for the indentation test, and place the specimen on the 30°C stage of the probe tacking tester for 1 minute. Subsequently, the surface tack force can be determined using the probe tacking tester under the following measurement conditions.

[0081] (Measurement conditions) Probe: Made of SUS (stainless steel), 5 mm in diameter Push-in / pull-out speed: 600 mm / sec Push-in time: 1 second

[0082] The thickness of the temporary fixing material layer 6c may be, for example, 0.1 μm or more, 1 μm or more, or 5 μm or more, and may be 200 μm or less, 100 μm or less, or 70 μm or less, from the viewpoint of stress relaxation.

[0083] In this way, a temporary fixed laminate 20 can be obtained from the laminate precursor 10.

[0084] [Method for Manufacturing a Semiconductor Device] The method for manufacturing a semiconductor device according to this embodiment comprises the steps of: preparing the above-mentioned temporary fixing laminate (preparation step); temporarily fixing the semiconductor member to the support member via the light-absorbing layer and the temporary fixing material layer (temporary fixing step); processing the semiconductor member that has been temporarily fixed to the support member (processing step); and separating the semiconductor member from the support member by irradiating the light-absorbing layer of the temporary fixing laminate with light from the support member side (separation step). According to the method for manufacturing a semiconductor device according to this embodiment, since the above-mentioned temporary fixing laminate is used, the semiconductor member and the support member can be sufficiently fixed, and furthermore, the processed semiconductor member can be easily separated from the support member while suppressing the generation of residue.

[0085] (Preparation Step) Figures 4(a) and 4(b) are schematic cross-sectional views showing one embodiment of a semiconductor device manufacturing method. In the preparation step, the above-mentioned temporary fixing laminate 20 is prepared for temporarily fixing the semiconductor components to the support member while the semiconductor components are being processed for the manufacture of the semiconductor device (see Figure 4(a)). Here, we will describe the case where the temporary fixing material layer 6c is a cured product.

[0086] (Temporary Fixing Process) In the temporary fixing process, the semiconductor member 40 is temporarily fixed to the support member 2 via the light-absorbing layer 4 and the temporary fixing material layer 6c. The temporary fixing material layer 6c has a surface S opposite to the light-absorbing layer 4. In the temporary fixing process, for example, the semiconductor member 40 can be temporarily fixed to the support member 2 by pressing the semiconductor member 40 while it is placed on the temporary fixing material layer 6c (see Figure 4(b)). In other words, the semiconductor member 40 can be temporarily bonded to the support member 2 via the light-absorbing layer 4 and the temporary fixing material layer 6c. In this way, a laminate 30 is formed comprising a temporary fixing laminate 20 and a semiconductor member 40 provided on the temporary fixing material layer 6c of the temporary fixing laminate 20.

[0087] Examples of semiconductor members 40 include silicon wafers, and semiconductor substrates 42 and redistribution layers 44. When semiconductor members 40 have semiconductor substrates 42 and redistribution layers 44, semiconductor members 40 are temporarily fixed to the support member 2 via the light absorption layer 4 and the temporary fixing layer 6c, with the redistribution layer 44 facing the temporary fixing layer 6c side. Semiconductor members 40 may further have external connection terminals. The semiconductor substrate 42 may be a semiconductor wafer or a semiconductor chip obtained by dividing a semiconductor wafer. In the example of Figure 4(a), multiple semiconductor members 40 are arranged on the surface S of the temporary fixing layer 6c, but the number of semiconductor members 40 may be one. The thickness of the semiconductor member 40 may be 1 to 1000 μm, 10 to 500 μm, or 20 to 200 μm, in order to miniaturize and thin semiconductor devices, as well as to suppress cracking during transport and processing.

[0088] The semiconductor member 40 placed on the temporary fixing material layer 6c is pressed against the temporary fixing material layer 6c using, for example, a vacuum press, a vacuum laminator, or a wafer bonder. When using a vacuum press, the pressing conditions may be an atmospheric pressure of 1 hPa or less, a pressing pressure of 1 MPa, a pressing temperature of 120 to 200°C, and a holding time of 100 to 300 seconds. When using a vacuum laminator, the pressing conditions may be, for example, an atmospheric pressure of 1 hPa or less, a pressing temperature of 60 to 180°C or 80 to 150°C, a laminating pressure of 0.01 to 1.0 MPa or 0.1 to 0.7 MPa, and a holding time of 1 to 600 seconds or 30 to 300 seconds.

[0089] Furthermore, when using a temporary fixing laminate in which the temporary fixing layer is an uncured temporary fixing film, the temporary fixing layer may be heated after the semiconductor member is placed on the temporary fixing layer. Heating may be performed simultaneously with or after the bonding of the semiconductor member. The heating conditions may be, for example, 150 to 300°C or 180 to 250°C for 1 to 180 minutes or 10 to 120 minutes. In this way, the temporary fixing layer comes to contain cured products of components (A) and (B), and component (C).

[0090] (Processing Steps) Figures 5(a), 5(b), and 5(c) are schematic cross-sectional views showing one embodiment of a semiconductor device manufacturing method. In the processing steps, the semiconductor member 40, which is temporarily fixed to the support member 2, is processed. Figure 5(a) shows an example of processing including thinning of the semiconductor substrate, and the processed semiconductor member 40a has a thinned semiconductor substrate 42a and a redistribution layer 44. The processing of the semiconductor member is not limited to this and may include, for example, thinning of the semiconductor substrate, dicing of the semiconductor member, formation of through electrodes (silicon through electrodes), etching, plating reflow, sputtering, or a combination thereof. The processing steps may also include electrically connecting copper through electrodes (silicon through electrodes), and may further include a copper annealing process in which a temperature of 300°C or higher is applied for the purpose of reducing electrical resistance by solid-phase diffusion of copper. For example, in the case of wafer-to-wafer bonding, after forming through-electrodes (silicon through-electrodes) on a semiconductor garment, a semiconductor wafer with separately prepared through-electrodes (silicon through-electrodes) is electrically connected by hybrid bonding, and then individual pieces are obtained to obtain multiple semiconductor chips.

[0091] After processing the semiconductor member 40, a sealing layer 50 is formed to seal the processed semiconductor member 40a, as shown in Figure 5(b). The sealing layer 50 can be formed using a sealing material commonly used for the manufacture of semiconductor devices. For example, the sealing layer 50 may be formed using a thermosetting resin composition. Examples of thermosetting resin compositions used for the sealing layer 50 include epoxy resins such as cresol novolac epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy resin, and naphthol novolac epoxy resin. The sealing layer 50 and the thermosetting resin composition for forming the sealing layer 50 may contain additives such as fillers and / or flame retardants.

[0092] The sealing layer 50 is formed using, for example, a solid material, a liquid material, a fine-grained material, or a sealing film. When a sealing film is used, a compression sealing molding machine, a vacuum laminating device, etc., are used. For example, the sealing layer 50 can be formed by covering the processed semiconductor member 40a with a sealing film that has been heat-melted at 40 to 180°C (or 60 to 150°C), 0.1 to 10 MPa (or 0.5 to 8 MPa) for 0.5 to 10 minutes using these devices. The thickness of the sealing film is adjusted so that the sealing layer 50 is greater than or equal to the thickness of the processed semiconductor member 40a. The thickness of the sealing film may be 50 to 2000 μm, 70 to 1500 μm, or 100 to 1000 μm.

[0093] After forming the sealing layer 50, the sealing layer 50 and the temporary fixing material layer 6c may be divided into multiple parts, each containing one processed semiconductor member 40a, as shown in Figure 5(c).

[0094] (Separation Process) Figures 6(a) and 6(b) are schematic cross-sectional views showing one embodiment of a semiconductor device manufacturing method. In the separation process, light is irradiated onto the light-absorbing layer of the temporary fixing laminate from the support member side, thereby separating the semiconductor member from the support member.

[0095] As shown in Figure 6(a), light A is irradiated onto the light-absorbing layer 4 of the temporary fixing laminate 20 from the support member 2 side to separate the processed semiconductor member 40a from the support member 2. Irradiation with light A causes the light-absorbing layer 4 to absorb light and instantaneously generate heat. The generated heat can cause, for example, melting, carbonization, or sublimation of the temporary fixing material layer 6c, thermal stress between the support member 2 and the processed semiconductor member 40a, and scattering of the light-absorbing layer 4. One or more of these phenomena are the main causes of cohesive delamination, interfacial delamination, etc., which can easily separate the processed semiconductor member 40a from the support member 2. In order to separate the processed semiconductor member 40a from the support member 2, a small amount of stress may be applied to the processed semiconductor member 40a along with the irradiation with light A.

[0096] Light A includes at least infrared light. The wavelength of infrared light is typically between 700 nm and 1 mm.

[0097] Light A in the separation process may be coherent light. Coherent light is an electromagnetic wave that has properties such as high coherence, high directivity, and high monochromaticity. Coherent light tends to have high intensity because light of the same wavelength and phase reinforces and combines with each other. Laser light is generally coherent light. Examples of laser light include YAG lasers, fiber lasers, semiconductor lasers, helium-neon lasers, argon lasers, and excimer lasers. The wavelength of the laser light may be 1300 nm or less. By having a wavelength of 1300 nm or less, the light absorption of the support member 2 is suppressed and the light absorption of the metal layer 12 is increased, making it possible to peel off with lower light irradiation energy. Coherent light may also be pulsed light.

[0098] Light A in the separation process may be incoherent light. Incoherent light is non-coherent light, and is an electromagnetic wave that has properties such as not generating interference fringes, low coherence, and low directivity. Incoherent light tends to attenuate as the optical path length increases. Light such as sunlight and fluorescent light is incoherent light. Incoherent light can also be defined as light excluding laser light. The irradiation area of ​​incoherent light is generally overwhelmingly larger than that of coherent light (i.e., laser light), so it is possible to reduce the number of irradiations. For example, a single irradiation can cause separation of multiple processed semiconductor components 40a. Incoherent light may include infrared light. Incoherent light may also be pulsed light.

[0099] The light source is not particularly limited, but it may be a xenon lamp. A xenon lamp is a lamp that utilizes light emission by applying and discharging a discharge tube filled with xenon gas. Because a xenon lamp discharges while repeatedly ionizing and exciting, it stably has a continuous wavelength range from the ultraviolet to the infrared region. Compared to lamps such as metal halide lamps, xenon lamps have a shorter start-up time, which can significantly reduce the time required for the process. In addition, although high heat is instantaneously generated because a high voltage is applied for light emission, xenon lamps are advantageous because they have a short cooling time and allow for continuous operation.

[0100] The irradiation conditions for the xenon lamp include the applied voltage, pulse width, irradiation time, irradiation distance (distance between the light source and the temporary fixing material layer), and irradiation energy, and these can be arbitrarily set according to the number of irradiations, etc. From the viewpoint of reducing damage to the semiconductor member 40a after processing, irradiation conditions that can separate the semiconductor member 40a after processing in a single irradiation may be set.

[0101] A portion of the temporary fixing material layer 6c may adhere to the separated processed semiconductor member 40a as residue. The adhered residue is removed as shown in Figure 6(b). The adhered residue may be removed, for example, by washing with a solvent or by peeling. The solvent is not particularly limited, but examples include ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, hexane, etc. These may be used individually or in combination of two or more. To remove the adhered residue, the processed semiconductor member 40a may be immersed in the solvent or ultrasonic cleaning may be performed. The processed semiconductor member 40a may also be heated at a low temperature of about 100°C or below.

[0102] By the methods exemplified above, a semiconductor element 60 comprising the processed semiconductor member 40a can be obtained. A semiconductor device can be manufactured by connecting the obtained semiconductor element 60 to another semiconductor chip or a substrate for mounting semiconductor elements.

[0103] The present invention will be described in more detail below with reference to examples (manufacturing examples). However, the present invention is not limited to these examples (manufacturing examples).

[0104] <Preparation of temporary fixing film> The following components were used in the preparation of the temporary fixing film.

[0105] [(A) Hydrocarbon resins] (A1) Maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (product name: FG1924GT, manufactured by Kraton Polymer Japan Co., Ltd., styrene content: 13% by mass), used as a 25% by mass limonene solution. (A2) Maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (product name: FG1901GT, manufactured by Kraton Polymer Japan Co., Ltd., styrene content: 30% by mass), used as a 25% by mass limonene solution. (A3) Maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (product name: ToughTec M1913, manufactured by Asahi Kasei Corporation, styrene content: 30% by mass), used as a 25% by mass limonene solution. (A4) Maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (product name: ToughTec M1943, manufactured by Asahi Kasei Corporation, styrene content: 20% by mass), used as a 25% by mass limonene solution. (A5) Styrene-ethylene-butylene-styrene block copolymer (product name: ToughTec H1221, manufactured by Asahi Kasei Corporation, styrene content: 12% by mass), used as a 25% by mass limonene solution. (A6) Styrene-ethylene-butylene-styrene block copolymer (product name: ToughTec H1041, manufactured by Asahi Kasei Corporation, styrene content: 30% by mass), used as a 25% by mass limonene solution. (A7) Styrene-ethylene-butylene-styrene block copolymer (product name: ToughTec H1517, manufactured by Asahi Kasei Corporation, styrene content: 43% by mass), used as a 25% by mass limonene solution.

[0106] [(B) Epoxy Resins] (B1) Dicyclopentadiene type epoxy resin (HP7200H, manufactured by DIC Corporation), used as a 25% by mass cyclohexanone solution (B2) Triphenylmethane type epoxy resin (1032H60, manufactured by Mitsubishi Chemical Corporation), used as a 25% by mass cyclohexanone solution

[0107] [(C) Curing accelerator] (C1) Imidazole derivative (2PZ-CN, manufactured by Shikoku Chemicals Co., Ltd.), used as a 10% by mass cyclohexanone solution.

[0108] [(D) Antioxidants] (D-a) Hindered phenol antioxidants (Da1) Hindered phenol antioxidant (ADEKA Stab AO-60, manufactured by ADEKA Corporation), used as a 10% by mass xylene solution (Da2) Hindered phenol antioxidant (ADEKA Stab AO-80, manufactured by ADEKA Corporation), used as a 10% by mass xylene solution (Da3) Hindered phenol antioxidant (Irganox 1076, BASF Japan Ltd.), used as a 10% by mass xylene solution

[0109] (D-b) Aromatic ring-containing thioether antioxidant (Db1) Thioether antioxidant (ADEKA STAB AO-26, manufactured by ADEKA Corporation), used as a 10% by mass xylene solution

[0110] (D-c) Thioether-containing hindered phenol antioxidant (Dc1) Hindered phenol antioxidant (Irganox 1520L, BASF Japan Ltd.), used as a 10% by mass xylene solution.

[0111] (Dd1) Thioether-based antioxidant (ADEKA Stab AO-412S, manufactured by ADEKA Corporation), used as a 10% by mass xylene solution. (Dd2) Thioether-based antioxidant (ADEKA Stab AO-503, manufactured by ADEKA Corporation), used as a 10% by mass xylene solution. (Dd3) Phosphate-based antioxidant (ADEKA Stab 2112, manufactured by ADEKA Corporation), used as a 10% by mass xylene solution.

[0112] <Film Preparation> (Examples 1-6, Comparative Examples 1-18) The materials shown in Table 1 were mixed in the proportions shown in Table 1 (unit: parts by mass; the values ​​in Table 1 represent the non-volatile content) to obtain a resin composition varnish. The obtained resin composition varnish was applied using a precision coating machine to the release-treated surface of a polyethylene terephthalate (PET) film (Purex A31, manufactured by Toyobo Film Solutions Co., Ltd., thickness: 38 μm) used as a support film, with the gap adjusted as appropriate so that the thickness after drying was 20 μm. The coating film was heated at 100°C for 5 minutes, and then the solvent was dried off by further heating at 150°C for 10 minutes to obtain a temporary fixing film.

[0113] <Evaluation of Temporary Fixing Film> 1. For the temporary fixing films of the examples and comparative examples, the temperature at which the mass of the temporary fixing material layer decreased by 1% by mass from the initial state (Td1) and the temperature at which it decreased by 5% by mass (Td5) were measured using a differential thermogravimetric analyzer (STA7300, manufactured by Hitachi High-Tech Science Co., Ltd.) during a heating process in an airflow at a heating rate of 10°C / min.

[0114]

[0115]

[0116]

[0117] As shown in Table 1, the temporary fixing material layers produced from the temporary fixing films of Examples 1 to 6 had a Td5 of 350°C or higher, confirming that they possessed excellent heat resistance.

[0118] <Fabrication of the light-absorbing layer> A light-absorbing layer, in which the first conductive layer is titanium and the second conductive layer is copper, was fabricated on a glass slide (size: 40 mm x 40 mm, thickness: 0.8 mm), which serves as a support member, by sputtering, thereby obtaining a support member equipped with a light-absorbing layer. The light-absorbing layer was pre-treated by reverse sputtering (Ar flow rate: 1.2 x 10⁻⁶). －２ Pa・m ３ After a period of 70 sccm / s (RF power: 300W, time: 300 seconds), RF sputtering was performed under the processing conditions shown in Table 4 to fabricate the titanium layer / copper layer with a thickness of 50 nm / 200 nm.

[0119]

[0120] <Fabrication of Laminate> On the light-absorbing layer fabricated above, a temporary fixing film with a thickness of 20 μm obtained in Example 1 was laminated using a vacuum laminator at 80°C, 0.5 MPa, and 120 seconds. Next, a silicon wafer (size: 40 mm x 40 mm, thickness: 725 μm) was mounted on this temporary fixing film and laminated using a vacuum laminator at 150°C, 0.5 MPa, and 120 seconds. After that, it was sterilized at 200°C for 1 hour. ２ The laminate of Example 1 was obtained by thermal curing under atmospheric conditions.

[0121] <Peelability Test> Two laminates of Example 1 were prepared. The laminates were irradiated with a xenon lamp under two different irradiation conditions: Irradiation Condition A, with an applied voltage of 3800V, pulse width of 200μs, irradiation distance of 50mm, number of irradiations of 1, and irradiation time of 200μs; and Irradiation Condition B, with an applied voltage of 2700V, pulse width of 1000μs, irradiation distance of 50mm, number of irradiations of 1, and irradiation time of 1000μs. The peelability from the support member was evaluated. The xenon lamp used was a Xenon S2300 (wavelength range: 270nm to near-infrared region, irradiation energy per unit area: 7J / cm²). ２ (Predicted value, irradiation condition A), 13 J / cm ２ Using (predicted values, irradiation condition B), xenon lamp irradiation was performed from the side of the laminate's support member (slide glass). The irradiation distance is the distance between the light source and the stage on which the slide glass was placed.

[0122] In the peelability test, if the semiconductor chip peeled off the slide glass spontaneously after irradiation with a xenon lamp, it was rated "A". If the semiconductor chip could not be separated even by inserting tweezers between the semiconductor chip and the slide glass, it was rated "C". The results are shown in Table 5.

[0123]

[0124] 1...Film for temporary fixing, 2...Support member, 4...Light absorbing layer, 6...Resin composition layer, 6c...Temporary fixing material layer, 10...Laminate precursor, 20...Laminate for temporary fixing, 30...Laminate, 40...Semiconductor member, 40a...Processed semiconductor member, 42...Semiconductor substrate, 42a...Thinned semiconductor substrate, 44...Redistribution layer, 50...Sealing layer, 60...Semiconductor element.

Claims

1. A temporary fixing film used for temporarily fixing a semiconductor member and a support member, comprising a thermosetting component and an antioxidant, wherein the thermosetting component comprises (A) a hydrocarbon resin having monomer units derived from styrene, and the antioxidant comprises (D-a) a hindered phenol antioxidant and (D-b) a thioether antioxidant having an aromatic ring, or (D-c) a hindered phenol antioxidant having a thioether bond.

2. The temporary fixing film according to claim 1, wherein component (A) is a hydrocarbon resin modified with maleic anhydride.

3. The temporary fixing film according to claim 1, wherein the thermosetting component further comprises (B) epoxy resin.

4. A resin composition used for temporarily fixing a semiconductor member and a support member, comprising a thermosetting component and an antioxidant, wherein the thermosetting component comprises (A) a hydrocarbon resin having monomer units derived from styrene, and the antioxidant comprises (D-a) a hindered phenol antioxidant and (D-b) a thioether antioxidant having an aromatic ring, or (D-c) a hindered phenol antioxidant having a thioether bond.

5. The resin composition according to claim 4, wherein component (A) is a hydrocarbon resin modified with maleic anhydride.

6. The resin composition according to claim 4, wherein the thermosetting component further comprises (B) epoxy resin.

7. A temporary fixing laminate comprising, in this order, a support member, a light-absorbing layer, and a temporary fixing material layer consisting of a temporary fixing film or cured product thereof according to any one of claims 1 to 3, or a resin composition or cured product thereof according to any one of claims 4 to 6.

8. A method for manufacturing a semiconductor device, comprising the steps of: preparing a temporary fixing laminate according to claim 7; temporarily fixing a semiconductor member to a support member via the temporary fixing material layer; processing the semiconductor member temporarily fixed to the support member; and irradiating the light-absorbing layer of the temporary fixing laminate with light from the support member side to separate the semiconductor member from the support member.

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