Resin composition and semiconductor device

Abstract

The present disclosure addresses the problem of providing a resin composition which gives cured objects having high thermal conductivity, lower elastic modulus, and high adhesiveness to metals. The resin composition comprises an epoxy resin (A), a hardener (B), a polyisoprene compound (C), and inorganic fillers (D). The polyisoprene compound (C) has at least one functional group selected from the group consisting of acid anhydride groups and a carboxy group. The inorganic fillers (D) comprise a silica filler (D-2) and a thermally conductive filler (D-1) having a higher thermal conductivity than the silica filler (D-2). The content of the thermally conductive filler (D-1) is 60 mass% or higher but less than 100 mass% with respect to the sum of the silica filler (D-2) and the thermally conductive filler (D-1).

Description

Resin Composition and Semiconductor Device

[0001] The present disclosure generally relates to a resin composition and a semiconductor device, and more particularly to a resin composition containing an epoxy resin and a semiconductor device including a sealing portion containing a cured product of the resin composition.

[0002] Patent Document 1 discloses a resin composition. This resin composition contains a novolac type epoxy resin (A), a curing agent (B), and a carboxyl group-containing diene rubber polymer (C), and (C) / {(A)+(B)+(C)} is 0.01 to 0.20 in terms of weight ratio.

[0003] However, in Patent Document 1, there is a problem that the cured product of the resin composition cannot achieve high thermal conductivity, low elastic modulus, and high adhesion to metal.

[0004] Japanese Patent Laid-Open No. 58-176958

[0005] An object of the present disclosure is to provide a resin composition that realizes high thermal conductivity, low elastic modulus, and high adhesion to metal of the cured product of the resin composition, and a semiconductor device including a sealing portion containing the cured product of this resin composition.

[0006] The resin composition according to one aspect of the present disclosure contains an epoxy resin (A), a curing agent (B), a polyisoprene compound (C), and an inorganic filler (D). The polyisoprene compound (C) has at least one functional group selected from the group consisting of an acid anhydride group and a carboxyl group. The inorganic filler (D) includes a silica filler (D-2) and a thermally conductive filler (D-1) having a higher thermal conductivity than the silica filler (D-2). The content of the thermally conductive filler (D-1) is 60% by mass or more and less than 100% with respect to the total of the silica filler (D-2) and the thermally conductive filler (D-1).

[0007] The semiconductor device according to one aspect of the present disclosure includes a substrate, a semiconductor chip mounted on the surface of the substrate, and a sealing portion that seals at least a part of the semiconductor chip. The sealing portion contains a cured product of the resin composition.

[0008] Figure 1 is a cross-sectional view showing an example of a semiconductor device according to the embodiment. Figure 2 is a cross-sectional view showing an example of a semiconductor device according to the embodiment.

[0009] Embodiments of this disclosure will now be described. Note that the embodiments described below are only a selection of the various embodiments of this disclosure. The embodiments described below can be modified in various ways depending on the design, etc., as long as the objectives of this disclosure are achieved. While mechanisms of action and effect may be described below, these mechanisms are all speculative, and this disclosure is not bound by the descriptions of mechanisms.

[0010] 1. Overview The resin composition according to the embodiment of this disclosure (hereinafter also referred to as composition (X)) contains an epoxy resin (A), a curing agent (B), a polyisoprene compound (C), and an inorganic filler (D). The polyisoprene compound (C) has at least one functional group selected from the group consisting of an acid anhydride group and a carboxyl group. The inorganic filler (D) includes a silica filler (D-2) and a thermally conductive filler (D-1) which has a higher thermal conductivity than the silica filler (D-2). The content of the thermally conductive filler (D-1) is 60% by mass or more and less than 100% by mass of the total of the silica filler (D-2) and the thermally conductive filler (D-1).

[0011] Because composition (X) has the above configuration, it is possible to achieve high thermal conductivity, low elastic modulus, and high adhesion to metals in the cured product of composition (X) (hereinafter also referred to as the cured product). This is presumed to be because composition (X) exhibits the above effects for the following reasons.

[0012] Generally, to impart high thermal conductivity to a resin composition, a large amount of inorganic filler with high thermal conductivity is added to achieve a high concentration. However, in this case, the elastic modulus of the cured resin composition also becomes high. On the other hand, composition (X) can increase the thermal conductivity of its cured product by containing a specific inorganic filler (D) in a specific amount. Furthermore, composition (X) contains a polyisoprene compound (C) having a specific functional group. This makes it possible to lower the elastic modulus and improve adhesion to metals while maintaining high thermal conductivity in the cured product of composition (X).

[0013] 2. Details 2.1 Resin Composition The components and properties of composition (X) according to the embodiment are described below.

[0014] (Components) <Epoxy Resin> Epoxy resin (A) is a resin having one or more epoxy groups in one molecule. Epoxy resin (A) is not particularly limited, but examples include alkylphenol novolac type epoxy resins such as phenol novolac type epoxy resins and cresol novolac type epoxy resins; naphthol novolac type epoxy resins; phenol aralkyl type epoxy resins having a phenylene skeleton, biphenylene skeleton, etc.; biphenyl aralkyl type epoxy resins; naphthol aralkyl type epoxy resins having a phenylene skeleton, biphenylene skeleton, etc.; polyfunctional epoxy resins such as triphenolmethane type epoxy resins and alkyl-modified triphenolmethane type epoxy resins; triphenylmethane type epoxy resins; tetrakisphenolethane type epoxy resins Examples include epoxy resins; dicyclopentadiene-type epoxy resins; stilbene-type epoxy resins; bisphenol-type epoxy resins such as bisphenol A-type epoxy resins and bisphenol F-type epoxy resins; biphenyl-type epoxy resins; naphthalene-type epoxy resins; anthracene-type epoxy resins; alicyclic epoxy resins; glycidylamine-type epoxy resins obtained by the reaction of polyamines such as diaminodiphenylmethane and isocyanuric acid with epichlorohydrin; glycidyl ether-type epoxy resins obtained by the reaction of polybasic acids such as phthalic acid and dimer acid with epichlorohydrin; and phosphorus-containing epoxy resins obtained by introducing phosphorus atoms into the above epoxy resins. The epoxy resin (A) contained in composition (X) may be one type or two or more types.

[0015] The content of epoxy resin (A) is preferably 3% by mass or more, and more preferably 5% by mass or more, relative to the total amount of nonvolatile components in composition (X). In this case, the fluidity of composition (X) is improved, and the adhesion between the cured product and the components of the semiconductor device 1 other than the sealing portion can be improved. The content of epoxy resin (A) is preferably 15% by mass or less, and more preferably 10% by mass or less, relative to the total amount of nonvolatile components in composition (X). In this case, the thermal conductivity of the cured product can be improved.

[0016] <Curing Agent> The curing agent (B) is a component that reacts with the epoxy resin (A) to crosslink its molecular chains and undergo thermal curing. The curing agent (B) contains, for example, at least one selected from the group consisting of phenol compounds, imidazole compounds, benzoxazine compounds, and bismaleimide compounds. The curing agent (B) contained in composition (X) may be one type or two or more types.

[0017] A phenol compound is a compound having one or more phenolic hydroxyl groups in one molecule. That is, a phenol compound has a phenolic hydroxyl group as a functional group. Phenol compounds can improve the electrical properties and heat resistance of cured products. Phenolic compounds are not particularly limited, but examples include biphenyl aralkyl type phenol resins, phenyl aralkyl type phenol resins, novolac type phenol resins, cresol novolac type phenol resins, bisphenol A novolac type phenol resins, naphthalene type phenol resins, tetrakisphenol type phenol resins, and phosphorus-containing phenol resins obtained by introducing phosphorus atoms into the above phenol resins.

[0018] Imidazole compounds are compounds having one or more imidazole rings in one molecule, or organic salts thereof. That is, imidazole compounds have an imidazole ring as a functional group. When used with epoxy resin (A), imidazole compounds are also treated as curing accelerators. Imidazole compounds can increase the heat resistance and mechanical strength of the cured product. Examples of imidazole compounds include 2-methylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,4,5-triphenylimidazole, and 2-phenyl-4-methylimidazole.

[0019] Benzooxazine compounds are compounds having one or more benzooxazine rings in one molecule. That is, benzooxazine compounds have a benzooxazine ring as a functional group. Benzooxazine compounds can improve the heat resistance and electrical properties of cured products. Commercially available benzooxazine compounds can be used. Examples of such commercially available products include ALP-d type benzooxazine, P-d type benzooxazine, and F-a type benzooxazine manufactured by Shikoku Chemicals, Inc.; KZH-5031, KZH-5032, KZH-5075, KZH-5085, and KZH-5086 manufactured by Kolon Industries, Inc.; and JBZ-BA100N, JBZ-FA100N, JBZ-DP100N, JBZ-OP100N, JBZ-OP100D, and JBZ-OP100I manufactured by JFE Chemical Corporation.

[0020] Bismaleimide compounds are compounds having two maleimide groups in one molecule. That is, bismaleimide compounds have maleimide groups as functional groups. Bismaleimide compounds can improve the heat resistance and electrical properties of cured products. Examples of bismaleimide compounds include bis(3-ethyl-5-methyl-4-maleimidophenyl)methane, 4,4-bismaleimidodiphenyl ether, 2,2-bis[4-(4-maleimidophenoxy)phenyl]propane, 4,4-diphenylmethanebismaleimide, m-phenylenebismaleimide, 4-methyl-1,3-phenylenebismaleimide, 1,6'-bismaleimide-(2,2,4-trimethyl)hexane, 4,4'-diphenylsulfonebismaleimide, 1,3-bis(3-maleimidophenoxy)benzene, and 1,3-bis(4-maleimidophenoxy)benzene. Commercially available bismaleimide compounds can also be used. Examples of such commercially available products include the BMI-689, BMI-1500, and BMI-1700 manufactured by Designer Molecles.

[0021] The ratio of the epoxy equivalent of epoxy resin (A) to the functional group equivalent of curing agent (B) is preferably 0.6 or higher, and more preferably 0.8 or higher. In this case, the moisture resistance of the cured product can be improved. The ratio of the epoxy equivalent of epoxy resin (A) to the functional group equivalent of curing agent (B) is preferably 10 or less, and more preferably 5.0 or less. In this case, the curability of composition (X) is improved, and the heat resistance and mechanical strength of the cured product can be improved.

[0022] <Polyisoprene Compounds> Polyisoprene compound (C) is a component that can improve the adhesion between the cured material and the metal.

[0023] The polyisoprene compound (C) has at least one functional group selected from the group consisting of acid anhydride groups and carboxyl groups. This makes it possible to reduce the elastic modulus of the cured product.

[0024] The polyisoprene compound (C) preferably includes a polyisoprene compound (C-A) having a structural unit (c-1) represented by formula (1), and at least one structural unit selected from the group consisting of a structural unit (c-2) represented by formula (2), a structural unit (c-3) represented by formula (3), and a structural unit (c-4) represented by formula (4).

[0025]

[0026]

[0027]

[0028]

[0029] In other words, the polyisoprene compound (C-A) contains at least one skeleton selected from the group consisting of the skeleton represented by formula (5), the skeleton represented by formula (6), and the skeleton represented by formula (7).

[0030]

[0031]

[0032]

[0033] In equations (5), (6), and (7), m and n each represent a natural number greater than or equal to 1.

[0034] The elastic modulus of the cured product can be reduced by including a polyisoprene compound (C-A) having a structural unit (c-1) represented by formula (1), and at least one structural unit selected from the group consisting of a structural unit (c-2) represented by formula (2), a structural unit (c-3) represented by formula (3), and a structural unit (c-4) represented by formula (4). In other words, since the polyisoprene compound (C-A) has an acid anhydride group or a carboxyl group in the polyisoprene skeleton, the elastic modulus of the cured product can be further reduced.

[0035] The polyisoprene compound may further contain a polyisoprene compound (C-B) having structural unit (c-1) but lacking structural units (c-2), (c-3), and (c-4). The polyisoprene compound (C-B) may or may not have structural units different from structural unit (c-1). The structural units further contained in the polyisoprene compound (C-B) are not particularly limited, but examples include polybutadiene structural units and polystyrene structural units.

[0036] The weight-average molecular weight (Mw) of the polyisoprene compound (C) is preferably 10,000 or more, and more preferably 15,000 or more. In this case, the elastic modulus of the cured product can be reduced. The weight-average molecular weight of the polyisoprene compound (C) is preferably 50,000 or less, and more preferably 35,000 or less. In this case, good fluidity can be achieved.

[0037] The content of polyisoprene compound (C) is preferably 1% by mass or more, and more preferably 2% by mass or more, relative to the total of epoxy resin (A), curing agent (B), and polyisoprene compound (C). In this case, the elastic modulus of the cured product can be reduced. The content of polyisoprene compound (C) is preferably 15% by mass or less, and more preferably 10% by mass or less, relative to the total of epoxy resin (A), curing agent (B), and polyisoprene compound (C). In this case, the fluidity of composition (X) can be improved, and the thermal conductivity of the cured product can be enhanced.

[0038] <Inorganic Filler> The inorganic filler (D) includes silica filler (D-2) and thermally conductive filler (D-1) which has higher thermal conductivity than silica filler (D-2).

[0039] The silica filler (D-2) is not particularly limited, but examples include fused silica filler, synthetic silica filler, and crystalline silica filler.

[0040] The average particle size (D50) of the silica filler (D-2) is preferably 0.01 μm or more and 1.5 μm or less, more preferably 0.1 μm or more and 1.0 μm or less, and still more preferably 0.2 μm or more and 0.8 μm or less. If it is within the above range, the generation of resin flow, bleeding, etc. of the composition (X) during the formation of the cured product can be suppressed. That is, the moldability of the composition (X) can be improved. Specifically, for example, the generation of burrs during the molding of the sealing material using the composition (X) can be suppressed. In addition, the average particle size (D50) in the present disclosure is the value of 50% of the integrated value in the volume-based particle size distribution measured by the laser diffraction / scattering method.

[0041] The heat conductive filler (D-1) preferably contains at least one selected from the group consisting of an aluminum oxide filler, an aluminum nitride filler, a boron nitride filler, and a magnetic metal filler. In this case, the heat conductivity of the cured product can be improved. The magnetic metal filler is not particularly limited, and examples thereof include iron oxide, permalloy, ferrite, and the like.

[0042] The average particle size (D50) of the heat conductive filler (D-1) is preferably 0.1 μm or more and 15.0 μm or less, more preferably 0.5 μm or more and 7.0 μm or less, and still more preferably 2.0 μm or more and 5.0 μm or less. If it is within the above range, the filling property into a narrow space such as the sealing portion of the semiconductor package can be improved, and the heat conductivity of the cured product can be improved.

[0043] The content of the inorganic filler (D) is preferably 80% by mass or more, more preferably 85% by mass or more, and still more preferably 88% by mass or more, based on the total amount of non-volatile components in the composition (X). In this case, the thermal conductivity of the cured product can be improved. The content of the inorganic filler (D) is preferably 95% by mass or less, more preferably 93% by mass or less, and still more preferably 91% by mass or less, based on the total amount of non-volatile components in the composition (X). In this case, a decrease in the filling property of the composition (X) can be suppressed. The non-volatile components in the composition (X) are components that do not volatilize even after curing among the components contained in the composition (X), and examples include the epoxy resin (A), the curing agent (B), the polyisoprene compound (C), and the inorganic filler (D).

[0044] The inorganic filler (D) may be surface-treated with a surface treatment agent. In this case, the dispersibility of the inorganic filler (D) in the composition (X) can be enhanced. The surface treatment agent is not particularly limited, and examples include silane-based compounds, titanium-based compounds, aluminum chelates, and aluminum / zirconium-based compounds.

[0045] The content of the thermal conductivity filler (D-1) is 60% by mass or more, preferably 70% by mass or more, based on the total of the silica filler (D-2) and the thermal conductivity filler (D-1). In this case, the thermal conductivity of the composition (X) can be improved. The content of the thermal conductivity filler (D-1) is less than 100% by mass, preferably 99.9% by mass or less, and more preferably 99.0% by mass or less, based on the total of the silica filler (D-2) and the thermal conductivity filler (D-1). In this case, since the composition (X) contains a certain amount of silica, a decrease in the moldability of the composition (X) can be suppressed.

[0046] <Additives> The composition (X) may further contain additives as other components, in addition to the above-described components, as necessary, within a range that does not impair the effects of the embodiments. The components of the additives and their contents are not particularly limited.

[0047] The additives are not particularly limited, but examples include silane coupling agents, release agents, and pigments. Examples of silane coupling agents include N-phenyl-3-aminopropyltrimethoxysilane, vinyltrimethoxysilane, methacryloxypropylmethyldimethoxysilane, p-styryltriethoxysilane, N-2-(aminoethyl)-3-aminopropylmethyldimethoxysilane, glycidoxypropyltriethoxysilane, isocyanatetopropyltriethoxysilane, isocyanatetopropyltriethoxysilane, mercaptopropylmethyldimethoxysilane, and 3-mercaptopropyltrimethoxysilane. Examples of release agents include carnauba wax and polyethylene wax. Examples of pigments include carbon black and titanium black.

[0048] (Characteristics) <Thermal Conductivity> The thermal conductivity of the cured product of composition (X) is preferably 1.5 W / (m·K) or higher. In this case, deterioration of performance and failure due to heat generation of the semiconductor device 1 containing the cured product can be suppressed, and the reliability of the semiconductor device 1 can be improved. This thermal conductivity is more preferably 2.0 W / (m·K) or higher.

[0049] <Elastic Modulus> The cured product of composition (X) has a good elastic modulus at room temperature and at high temperatures. Specifically, the elastic modulus of the cured product at room temperature is preferably 25 GPa or less, and the elastic modulus at 260°C is preferably 0.4 GPa or less. In this case, the cured product can have an appropriate elastic modulus, which can reduce stress at the interface with the substrate, etc., and suppress the occurrence of peeling, cracking, etc. of the cured product. Therefore, the reliability of the semiconductor device 1 including the cured product can be improved. The elastic modulus in this disclosure is measured by a bending test in accordance with JIS K6911. Also, in this disclosure, room temperature is 25°C.

[0050] <Cross-cut test> The cured product of composition (X) has good adhesion strength to stainless steel. Specifically, the adhesion strength between the cured product and stainless steel is preferably 3B or higher in the cross-cut test evaluation in accordance with ASTM D 3559-B. In this case, for example, adhesion to metal films containing stainless steel used as electromagnetic wave shielding films can be improved. Therefore, the generation of electromagnetic interference generated from semiconductor chips of semiconductor devices containing the cured product can be suppressed.

[0051] 2.2 Semiconductor Device (Semiconductor Device) The semiconductor device 1 according to this embodiment comprises a substrate 11, a semiconductor chip 12 mounted on the surface of the substrate 11, and a sealing portion 13 that seals at least a part of the semiconductor chip 12 (see Figure 1). The sealing portion 13 contains a cured product of composition (X). That is, a cured product of composition (X) can be used as the sealing portion 13 in the semiconductor device 1. The sealing portion 13 is a member that protects the semiconductor chip 12 by covering at least a part of it. The sealing portion 13 may seal only a part of the semiconductor chip 12, or it may seal the entire surface. In this way, the semiconductor device 1 can have high reliability because it contains a cured product of composition (X).

[0052] The substrate 11 is not particularly limited and may include, for example, an insulating substrate such as a glass epoxy substrate, a polyimide substrate, a polyester substrate, or a ceramic substrate, and conductive wiring that overlaps the insulating substrate.

[0053] The semiconductor chip 12 is not particularly limited and may be any suitable surface-mount element such as a bare chip, package component, or wafer-level package.

[0054] Furthermore, a die attach material 14 may be provided between the substrate 11 and the semiconductor chip 12 for bonding the substrate 11 and the semiconductor chip 12.

[0055] The semiconductor device 1 is not particularly limited as long as it is a surface-mount type in which the semiconductor chip 12 is mounted on the surface of the substrate 11. Examples include packages that are mounted using leads, such as quad flat packages (QFP), quad flat leadless packages (QFN), small outline packages (SOP), and small outline J-lead packages (SOJ); packages that are mounted without using leads, such as ball grid arrays (BGA) and land grid arrays (LGA); and fan-out wafer-level packages (FO-WLP) and fan-out panel-level packages (FO-WLP). The semiconductor device 1 may also be a system-in-package (SiP) or antenna-in-package (AiP).

[0056] The method for manufacturing the semiconductor device 1 is not particularly limited and can be any suitable method. Specifically, a substrate 11, a semiconductor chip 12, and a die attach material 14 are prepared, and the semiconductor chip 12 is mounted on the surface of the substrate 11 via the die attach material 14. Subsequently, the substrate 11 after mounting the semiconductor chip 12 is pressure-molded so that at least a portion of the semiconductor chip 12 is covered with composition (X), and a sealing portion 13 is produced by curing the composition (X). The method of pressure molding is not particularly limited and examples include injection molding, transfer molding, and compression molding. The semiconductor device 1 can be manufactured in this manner.

[0057] Furthermore, the semiconductor device 1 may further include a metal film 15 facing the semiconductor chip 12 via a sealing portion 13 (see Figure 2). The metal film 15 is, for example, an electromagnetic wave shielding film. The electromagnetic wave shielding film can suppress electromagnetic interference such as noise emitted from the semiconductor chip 12. In other words, the semiconductor device 1 equipped with the metal film 15 can suppress the occurrence of failures, errors, etc., and can have high reliability. The metal film 15 is formed on surfaces other than the surface facing the wiring board when the semiconductor device 1 is mounted on the wiring board. The metal film 15 may be provided only on the surface of the semiconductor device 1 opposite to the surface facing the wiring board, or it may be provided on all surfaces of the semiconductor device 1 other than the surface facing the wiring board.

[0058] The material of the metal film 15 is not particularly limited as long as it provides an effect as an electromagnetic wave shield, and examples include stainless steel, copper, aluminum, silver, ferrite, permalloy, and iron-nickel alloys such as mu-metal. Among these, stainless steel is preferred from the viewpoint of adhesion with composition (X).

[0059] The method for forming the metal film 15 can be any suitable method and is not particularly limited. Examples of methods for forming the metal film 15 include film formation by sputtering, coating by screen printing, and plating, with film formation by sputtering being preferred. The thickness of the metal film 15 is not particularly limited, but is, for example, 2 μm.

[0060] 3. Aspects As will be clear from the above embodiments, this disclosure includes the following aspects. Hereafter, reference numerals are enclosed in parentheses solely to indicate their correspondence with the embodiments.

[0061] The composition (X) according to the first embodiment contains an epoxy resin (A), a curing agent (B), a polyisoprene compound (C), and an inorganic filler (D). The polyisoprene compound (C) has at least one functional group selected from the group consisting of an acid anhydride group and a carboxyl group. The inorganic filler (D) includes a silica filler (D-2) and a thermally conductive filler (D-1) which has a higher thermal conductivity than the silica filler (D-2). The content of the thermally conductive filler (D-1) is 60% by mass or more and less than 100% by mass of the total of the silica filler (D-2) and the thermally conductive filler (D-1).

[0062] According to this embodiment, a composition (X) can be provided that achieves high thermal conductivity, low elastic modulus, and high adhesion to metals in the cured product.

[0063] In the second embodiment, composition (X) comprises a polyisoprene compound (C-A) having a structural unit (c-1) represented by formula (1), and at least one structural unit selected from the group consisting of a structural unit (c-2) represented by formula (2), a structural unit (c-3) represented by formula (3), and a structural unit (c-4) represented by formula (4).

[0064]

[0065]

[0066]

[0067]

[0068] According to this embodiment, the elastic modulus of the cured product can be further reduced.

[0069] In the third embodiment, the composition (X) is such that, in the first or second embodiment, the weight-average molecular weight of the polyisoprene compound (C) is 10,000 or more and 50,000 or less.

[0070] According to this embodiment, the adhesion of the hardened material to the metal can be further improved.

[0071] In the composition (X) according to the fourth embodiment, the content of the polyisoprene compound (C) is 1% by mass or more and 15% by mass or less, based on the total amount of the epoxy resin (A), curing agent (B), and polyisoprene compound (C), in any one of the first to third embodiments.

[0072] According to this embodiment, the adhesion of the hardened material to the metal can be further improved.

[0073] The composition (X) according to the fifth embodiment, in any one of the first to fourth embodiments, comprises at least one curing agent (B) selected from the group consisting of phenol compounds, imidazole compounds, benzoxazine compounds, and bismaleimide compounds.

[0074] According to this embodiment, it is possible to improve the heat resistance of the cured product while also imparting properties specific to each curing agent (B) to the composition (X).

[0075] The composition (X) according to the sixth embodiment, in any one of the first to fifth embodiments, comprises at least one thermally conductive filler (D-1) selected from the group consisting of aluminum oxide filler, aluminum nitride filler, boron nitride filler, and magnetic metal filler.

[0076] According to this embodiment, the thermal conductivity of the cured material can be further improved.

[0077] The composition (X) according to the seventh embodiment has an average particle size (D50) of silica filler (D-2) of 0.01 μm or more and 1.5 μm or less, according to any one of the first to sixth embodiments.

[0078] According to this embodiment, it is possible to suppress the occurrence of resin flow, seepage, etc. of composition (X), and to improve the moldability of composition (X).

[0079] In the eighth embodiment, the composition (X) is such that, in any one of the first to seventh embodiments, the inorganic filler (D) is present in an amount of 80% by mass or more and 95% by mass or less, relative to the total amount of nonvolatile components in the composition (X).

[0080] According to this embodiment, the thermal conductivity of the cured material can be further improved.

[0081] The composition (X) according to the ninth embodiment has, in any one of the first to eighth embodiments, an elastic modulus of the cured product of composition (X) of 25 GPa or less at room temperature and an elastic modulus of 0.4 GPa or less at 260°C, and the adhesion strength between the cured product and stainless steel is 3B or higher in the evaluation of the cross-cut test in accordance with ASTM D 3559-B.

[0082] According to this embodiment, a composition (X) can be provided that achieves a low modulus of elasticity and high adhesion to metals in the cured product.

[0083] A semiconductor device (1) according to the tenth embodiment comprises a substrate (11), a semiconductor chip (12) mounted on the surface of the substrate (11), and a sealing portion (13) that seals at least a part of the semiconductor chip (12). The sealing portion (13) contains a cured product of the composition (X) according to any one of the first to ninth embodiments.

[0084] According to this embodiment, the occurrence of delamination, cracks, etc., is suppressed, and a semiconductor device (1) with improved reliability can be provided.

[0085] The semiconductor device (1) according to the eleventh embodiment further comprises a metal film (15) facing the semiconductor chip (12) via a sealing portion (13) in the tenth embodiment.

[0086] According to this embodiment, electromagnetic interference emitted from the semiconductor chip (12) is suppressed, thereby reducing the occurrence of failures, malfunctions, etc., and providing a semiconductor device (1) with improved reliability.

[0087] The present disclosure will be described in detail below with reference to examples. However, the present disclosure is not limited to the following examples.

[0088] (1) Preparation of the resin composition The components shown in Tables 1 to 3 were used as raw materials for the resin composition. The raw materials were blended and mixed using a mixer, and then kneaded using a twin-screw roller while heating in the range of 90°C to 140°C to obtain a mixture. The obtained mixture was cooled to room temperature (approximately 25°C) and then pulverized. This prepared the powdered resin composition.

[0089] <Epoxy Resins> Epoxy Resin #1: Manufactured by Nippon Kayaku Co., Ltd., product number "NC3000L", biphenyl aralkyl type, epoxy equivalent 269 g / eq. Epoxy Resin #2: Manufactured by Mitsubishi Chemical Corporation, product number "YX4000H", biphenyl type, epoxy equivalent 192 g / eq. Epoxy Resin #3: Manufactured by Mitsubishi Chemical Corporation, product number "YX8800UH", anthracene skeleton containing, epoxy equivalent 178 g / eq.

[0090] <Hardening Agents> Hardening agent #1: Manufactured by Meiwa Kasei Co., Ltd., product number "MEH7851-SS", phenol compound having a biphenyl aralkyl skeleton, functional group equivalent 203 g / eq. Hardening agent #2: Manufactured by Meiwa Kasei Co., Ltd., product number "MEH7841-4S", phenol compound having a biphenyl aralkyl skeleton, functional group equivalent 166 g / eq. Hardening agent #3: Manufactured by Shikoku Kasei Co., Ltd., product number "2PHZ-PW", 2-phenyl-4,5-dihydroxymethylimidazole, functional group equivalent 204 g / eq.

[0091] <Polyisoprene Compounds> Polyisoprene compound #1: Manufactured by Kuraray Co., Ltd., product number "LIR-30", homopolymer of formula (1), weight-average molecular weight 28,000 Polyisoprene compound #2: Manufactured by Kuraray Co., Ltd., product number "LIR-403", copolymer of formula (1) and formula (2), weight-average molecular weight 34,000 Polyisoprene compound #3: Manufactured by Kuraray Co., Ltd., product number "LIR-410", copolymer of formula (1) and formula (3), weight-average molecular weight 30,000 Polyisoprene compound #4: Manufactured by Kuraray Co., Ltd., product number "UC-102M", copolymer of formula (1) and formula (4), weight-average molecular weight 17,000 Polyisoprene compound #5: Manufactured by Kuraray Co., Ltd., product number "UC-203M", copolymer of formula (1) and formula (4), weight-average molecular weight 35,000.

[0092] <Elastomers> Elastomer #1: Manufactured by Kuraray Co., Ltd., product number "Clarity LA2116", acrylic block copolymer elastomer #2: Manufactured by Dow Toray Industries, Ltd., product number "DOWSIL EP-2601", silicone rubber spherical particle elastomer #3: Manufactured by Nippon Soda Co., Ltd., product number "JP-100", epoxidized polybutadiene, number average molecular weight 1300.

[0093] <Inorganic Fillers> Inorganic filler #1: Aluminum oxide filler, average particle size (D50) 3 μm, thermal conductivity 30 W / m·K Inorganic filler #2: Silica filler, average particle size (D50) 0.3 μm, thermal conductivity 1.3 W / m·K <Additives> Silane coupling agent #1: Manufactured by Shin-Etsu Chemical Co., Ltd., product number "KBM573", N-phenyl-3-aminopropyltrimethoxysilane Silane coupling agent #2: Manufactured by Shin-Etsu Chemical Co., Ltd., product number "KBM803", 3-mercaptopropyltrimethoxysilane Release agent: Manufactured by Dainichi Chemical Co., Ltd., product number "F1-100", Natural carnauba wax pigment: Manufactured by Mitsubishi Chemical Corporation, product number "MA100", Carbon black.

[0094] (2) Evaluation Details of the evaluation items in the embodiments of this disclosure are described below. The results are shown in Tables 1 to 3.

[0095] <Thermal Conductivity> Using a hot press molding machine, each resin composition prepared in "(1) Preparation of Resin Composition" was cured under the conditions of a set temperature of 175°C, a set pressure of 7 MPa, and a curing time of 300 seconds to produce a cured product of 50 mm × 50 mm × 1 mm. This cured product was then post-cured at 175°C for 6 hours. A 9.8 mm × 9.8 mm × 1 mm square sample was cut from the post-cured product. Graphite spray (FC-153) manufactured by Fine Chemical Japan Co., Ltd. was sprayed onto this sample. The thermal diffusivity of this sample was measured using a xenon flash analyzer (NETZSCH, product name NanoFlashLFA447). The density of the sample was measured by the Archimedes method, and the specific heat of the sample was measured by the DSC method. The thermal conductivity in the thickness direction of the sample was calculated by multiplying the thermal diffusivity, density, and specific heat.

[0096] <Modulus of Elasticity> Using a transfer molding machine, each resin composition prepared in "(1) Preparation of Resin Composition" was cured under the conditions of a set temperature of 175°C, a set injection pressure of 7 MPa, and a curing time of 180 seconds, and a cured specimen of 4 mm × 10 mm × 85 mm was prepared. Post-curing was performed on this specimen at 175°C for 6 hours. A bending test was performed on the prepared specimen in accordance with JIS K6911, and the modulus of elasticity was measured at room temperature (25°C) and high temperature (260°C). The main measurement parameters for the measurement of modulus of elasticity are as follows: - Distance between supports: 64 mm - Crosshead movement speed: 2 mm / min.

[0097] <Cross-cut test> After preparing the material using the "Thermal Conductivity" method described above, a metal film was deposited on the surface of the hardened material by sputtering stainless steel, copper, and stainless steel in that order to a total thickness of 2 μm, and an evaluation sample was prepared. A cross-cut test in accordance with ASTM D 3559-B was performed on the obtained evaluation sample.

[0098]

[0099]

[0100]

[0101] 1 Semiconductor device 11 Substrate 12 Semiconductor chip 13 Encapsulation part 14 Die attach material 15 Metal film

Claims

1. A resin composition comprising: an epoxy resin (A), a curing agent (B), a polyisoprene compound (C), and an inorganic filler (D), wherein the polyisoprene compound (C) has at least one functional group selected from the group consisting of an acid anhydride group and a carboxyl group, and the inorganic filler (D) comprises a silica filler (D-2) and a thermally conductive filler (D-1) having a higher thermal conductivity than the silica filler (D-2), wherein the content of the thermally conductive filler (D-1) is 60% by mass or more and less than 100% by mass of the total of the silica filler (D-2) and the thermally conductive filler (D-1).

2. The resin composition according to claim 1, wherein the polyisoprene compound (C) comprises a polyisoprene compound (C-A) having a structural unit (c-1) represented by formula (1), and at least one structural unit selected from the group consisting of a structural unit (c-2) represented by formula (2), a structural unit (c-3) represented by formula (3), and a structural unit (c-4) represented by formula (4).

3. The resin composition according to claim 1, wherein the weight-average molecular weight of the polyisoprene compound (C) is 10,000 or more and 50,000 or less.

4. The resin composition according to claim 1, wherein the content of the polyisoprene compound (C) is 1% by mass or more and 15% by mass or less with respect to the total amount of the epoxy resin (A), the curing agent (B), and the polyisoprene compound (C).

5. The resin composition according to claim 1, wherein the curing agent (B) comprises at least one selected from the group consisting of phenol compounds, imidazole compounds, benzoxazine compounds, and bismaleimide compounds.

6. The resin composition according to claim 1, wherein the thermally conductive filler (D-1) comprises at least one selected from the group consisting of aluminum oxide filler, aluminum nitride filler, boron nitride filler, and magnetic metal filler.

7. The resin composition according to claim 1, wherein the average particle size (D50) of the silica filler (D-2) is 0.01 μm or more and 1.5 μm or less.

8. The resin composition according to claim 1, wherein the inorganic filler (D) is present in an amount of 80% by mass or more and 95% by mass or less of the total amount of nonvolatile components in the resin composition.

9. The resin composition according to claim 1, wherein the elastic modulus of the cured resin composition at room temperature is 25 GPa or less, and the elastic modulus at 260°C is 0.4 GPa or less, and the adhesion strength between the cured resin composition and stainless steel is 3B or higher in the cross-cut test evaluation in accordance with ASTM D 3559-B.

10. A semiconductor device comprising a substrate, a semiconductor chip mounted on the surface of the substrate, and a sealing portion that seals at least a portion of the semiconductor chip, wherein the sealing portion contains a cured product of the resin composition described in any one of claims 1 to 9.

11. The semiconductor device according to claim 10, further comprising a metal film facing the semiconductor chip via the sealing portion.

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