Inductively coupled plasma reactor for treating exhaust gas from semiconductor manufacturing equipment
The inductively coupled plasma reactor addresses igniter malfunction by positioning igniters away from powder deposition zones, maintaining efficient plasma generation and exhaust gas treatment in semiconductor manufacturing facilities.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- LOT CES CO LTD
- Filing Date
- 2025-07-16
- Publication Date
- 2026-07-02
AI Technical Summary
Conventional inductively coupled plasma reactors for treating exhaust gases in semiconductor manufacturing facilities face issues with igniter malfunction due to powder accumulation, as the igniter is often positioned adjacent to the gas inlet and is heavily affected by powder deposition.
The design of the inductively coupled plasma reactor includes a chamber body with a toroidal plasma discharge channel, spaced gas inlet and outlet sections, and connecting pipe sections, with igniters positioned outside the powder deposition areas, minimizing exposure to powder and preventing functional loss.
Prevents igniter malfunction by positioning igniters in areas less affected by powder, ensuring consistent plasma generation and effective treatment of exhaust gases.
Smart Images
Figure KR2025010430_02072026_PF_FP_ABST
Abstract
Description
Inductively coupled plasma reactor for treating exhaust gases in semiconductor manufacturing facilities
[0001] The present invention relates to semiconductor manufacturing equipment technology, and more specifically, to an inductively coupled plasma reactor that processes exhaust gas discharged from a semiconductor process chamber using inductively coupled plasma.
[0002] Semiconductor devices are manufactured by repeatedly performing processes such as photolithography, etching, diffusion, and metal deposition on a wafer in a semiconductor process chamber using various process gases. After the process is completed in the semiconductor process chamber, residual gases remain in the chamber, and these residual gases contain various harmful components. The residual gases in the semiconductor process chamber are discharged through an exhaust line by a vacuum pump after the process is completed, but the exhaust gases are treated by an exhaust gas treatment device to prevent harmful components from being discharged as is.
[0003] Recently, technology utilizing plasma reactions to decompose and treat harmful substances has been widely used. As prior art related to the present invention, Registered Patent No. 10-2017811 discloses a plasma chamber that treats exhaust gas using inductively coupled plasma. Inductively coupled plasma is a method of generating plasma by utilizing an electric field created by a magnetic field that changes over time. Generally, a plasma reactor for inductively coupled plasma comprises a chamber that provides a space for plasma generation, a ferrite core coupled to surround the chamber, an antenna coil wound around the ferrite core, and an igniter for initial plasma ignition. Conventionally, as described in the aforementioned prior patent document, the igniter equipped in an inductively coupled plasma reactor for treating exhaust gas in semiconductor manufacturing facilities is located adjacent to the gas inlet side in the front center of the chamber, which is heavily affected by powder; consequently, there are cases where the igniter loses its function due to the powder.
[0004] The objective of the present invention is to provide an inductively coupled plasma reactor for treating exhaust gas of a semiconductor manufacturing facility, which prevents loss of function due to powder.
[0005] To achieve the above-described objective of the present invention, according to one aspect of the present invention, an inductively coupled plasma reactor for treating exhaust gas discharged from a semiconductor process chamber in which a semiconductor manufacturing process using process gas is performed by generating inductively coupled plasma, comprising: a chamber body providing a toroidal plasma discharge channel inside; and a magnetic core disposed to surround the chamber body. An inductively coupled plasma reactor for treating exhaust gas of a semiconductor manufacturing facility comprises an igniter installed in the chamber body to ignite plasma, wherein the chamber body comprises a gas inlet section and a gas outlet section positioned spaced apart along the height direction, and a first connecting pipe section and a second connecting pipe section positioned spaced apart along the width direction and extending along the height direction to connect the gas inlet section and the gas outlet section, wherein the gas inlet section has a gas inlet passage formed therein that extends along the height direction and through which the exhaust gas is introduced, and the gas outlet section has a gas outlet passage formed therein that extends along the height direction and through which the exhaust gas is introduced, wherein the first connecting pipe section has a first connecting passage formed therein that extends along the height direction and communicates with the gas inlet passage and the gas outlet passage, and the second connecting pipe section has a second connecting passage formed therein that extends along the height direction and communicates with the gas inlet passage and the gas outlet passage, and wherein the igniter is located outside the first connecting passage and the second connecting passage in the width direction of the gas inlet section or the gas outlet section. It is provided.
[0006] According to the present invention, all the objectives of the invention described above can be achieved. Specifically, in an inductively coupled plasma reactor, since a plurality of igniters are positioned on the side that is less affected by the powder, it is possible to prevent the igniters from losing their function due to the powder.
[0007] FIG. 1 is a block diagram illustrating the schematic configuration of a semiconductor manufacturing facility in which an inductively coupled plasma reactor for exhaust gas treatment according to one embodiment of the present invention is used.
[0008] FIG. 2 is a perspective view of an inductively coupled plasma reactor for exhaust gas treatment equipped in a semiconductor manufacturing facility illustrated in FIG. 1.
[0009] FIG. 3 is a perspective view of a plasma reaction chamber equipped in an inductively coupled plasma reactor for exhaust gas treatment shown in FIG. 2.
[0010] Figure 4 is a cross-sectional view along line A-A' of the plasma reaction chamber shown in Figure 3.
[0011] Figure 5 is a cross-sectional view along line B-B' of the plasma reaction chamber shown in Figure 3.
[0012] Figure 6 is a plan view of the plasma reaction chamber shown in Figure 3.
[0013] Hereinafter, the configuration and operation of an embodiment of the present invention will be described in detail with reference to the drawings.
[0014] FIG. 1 illustrates, as a block diagram, an example of a semiconductor manufacturing facility in which an inductively coupled plasma reactor for treating exhaust gas according to one embodiment of the present invention is used. Referring to FIG. 1, the semiconductor manufacturing facility (10) includes a semiconductor manufacturing equipment (11) in which a semiconductor manufacturing process for manufacturing a semiconductor device is performed, an exhaust equipment (15) for discharging gas from the semiconductor manufacturing equipment (11), an inductively coupled plasma reactor (100) according to one embodiment of the present invention that processes the exhaust gas discharged from the semiconductor manufacturing equipment (11) by the exhaust equipment (15) using inductively coupled plasma, and a power source (190) that supplies power to the inductively coupled plasma reactor (100).
[0015] The semiconductor manufacturing equipment (11) manufactures semiconductor devices by performing a semiconductor manufacturing process using various process gases. The semiconductor manufacturing equipment (11) is equipped with a semiconductor process chamber (12) in which a semiconductor manufacturing process using various process gases is performed. Although not illustrated, the semiconductor manufacturing equipment (11) further includes a process gas supply unit that supplies various types of process gases required for the semiconductor process chamber (12).
[0016] The semiconductor process chamber (12) includes all types of semiconductor process chambers commonly used in the field of semiconductor manufacturing equipment technology to manufacture semiconductor devices. Residual gas generated in the semiconductor process chamber (12) is discharged to the outside as exhaust gas by the exhaust equipment (15).
[0017] The exhaust equipment (15) discharges residual gas generated after the process in the semiconductor process chamber (12) as exhaust gas from the semiconductor process chamber (12). The exhaust equipment (15) is equipped with a vacuum pump (16), a chamber exhaust pipe (17) connecting the semiconductor process chamber (12) and the vacuum pump (16), and a pump exhaust pipe (18) extending downstream from the vacuum pump (16).
[0018] The vacuum pump (16) creates negative pressure on the side of the semiconductor process chamber (12) through a chamber exhaust pipe (17) connecting the semiconductor process chamber (12) and the vacuum pump (15) in order to discharge residual gas of the semiconductor process chamber (12) as exhaust gas. Since the vacuum pump (16) includes the configuration of a vacuum pump commonly used in the field of semiconductor manufacturing equipment technology, a detailed description thereof is omitted.
[0019] The chamber exhaust pipe (17) connects the exhaust port of the semiconductor process chamber (12) and the intake port of the vacuum pump (16) between the semiconductor process chamber (12) and the vacuum pump (16), thereby connecting the semiconductor process chamber (12) and the vacuum pump (16). Due to the negative pressure formed by the vacuum pump (16), residual gas in the semiconductor process chamber (12) is discharged as exhaust gas through the chamber exhaust pipe (17).
[0020] The pump exhaust pipe (18) extends downstream from the vacuum pump (16). The pump exhaust pipe (18) is connected to the discharge port of the vacuum pump (16) so that exhaust gas discharged from the vacuum pump (16) flows through it. Although not illustrated, a scrubber for purifying exhaust gas is connected to the downstream end of the pump exhaust pipe (18).
[0021] An inductively coupled plasma reactor (100) is according to one embodiment of the present invention and is installed on a chamber exhaust pipe (17) to process exhaust gas discharged from a semiconductor process chamber (12) using inductively coupled plasma (ICP). The inductively coupled plasma reactor (100) operates by receiving power from a power source (190).
[0022] In FIG. 2, an inductively coupled plasma reactor (100) is shown in a perspective view. Referring to FIG. 2, the inductively coupled plasma reactor (100) comprises a plasma reaction chamber (110), a magnetic core (180) arranged to surround the plasma reaction chamber (110), and a coil (not shown) wound around the magnetic core (180).
[0023] A plasma reaction chamber (110) is illustrated in a perspective view in FIG. 3, in a cross-sectional view in FIG. 4 and FIG. 5, and in a plan view in FIG. 6. Referring to FIG. 3 through FIG. 6, the plasma reaction chamber (110) comprises a chamber body (120) that provides a toroidal plasma discharge channel (C) inside, and two igniters (170) installed in the chamber body (120) to ignite the plasma. For convenience of explanation, a height direction (H), a front-rear direction (F), and a width direction (W) that are orthogonal to each other with respect to the plasma reaction chamber (110) are introduced.
[0024] The chamber body (120) provides a toroidal plasma discharge channel (C) inside. The chamber body (120) has a gas inlet (130), a gas outlet (140) located spaced apart from the gas inlet (130) in the height direction (H), and a first connecting pipe section (150) and a second connecting pipe section (160) that are spaced apart in the width direction (W) and respectively connect the gas inlet (130) and the gas outlet (140).
[0025] The gas inlet section (130) is positioned above the gas outlet section (140) in the height direction (H) and is in communication with the first connecting pipe section (150) and the second connecting pipe section (160). A gas inlet passage (131) extending along the height direction (H) is formed in the gas inlet section (130). The gas inlet passage (131) is generally circular and is located generally in the center of the gas inlet section (130). Exhaust gas is introduced into the plasma reaction chamber (110) through the gas inlet passage (131). The gas inlet passage (131) is in communication with the first connecting pipe section (150) and the second connecting pipe section (160). An inlet-side passage separation section (132) formed between the first connecting pipe section (150) and the second connecting pipe section (160) crosses the center of the gas inlet passage (131). In the gas inlet section (130), an inlet-side front step section (133a) and an inlet-side rear step section (133b) are formed, which are spaced apart in the front-rear direction (F) and are located at the front and rear, respectively. The inlet-side front step section (133a) and the inlet-side rear step section (133b) are located on the gas inlet passage (131), and an inlet-side passage separation section (132) passes between the inlet-side front step section (133a) and the inlet-side rear step section (133b). Powder is well deposited on the inlet-side front step section (133a), the inlet-side rear step section (133b), and the inlet-side passage separation section (132).
[0026] In the gas inlet section (130), a first inlet-side igniter installation hole (135a) and a second inlet-side igniter installation hole (135b) are formed, each located at both ends in the width direction (W). Ignitioners can be inserted and installed in each of the first inlet-side igniter installation hole (135a) and the second inlet-side igniter installation hole (135b). The first inlet-side igniter installation hole (135a) is located on the side of the first connecting pipe section (150) and communicates with the plasma discharge channel (C). The first inlet-side igniter installation hole (135a) is closed by a cover (155). The second inlet-side igniter installation hole (135b) is located on the side of the second connecting pipe section (160) and communicates with the plasma discharge channel (C). The second inlet-side igniter installation hole (135b) is closed by a cover (155). On the wall surface forming the gas inflow passage (131), a first inflow passage wall opening (131a) and a second inflow passage wall opening (131b) are formed, facing the first inflow side igniter installation hole (135a) and the second inflow side igniter installation hole (135b), respectively.
[0027] The gas outlet section (140) is located spaced apart from the gas inlet section (130) in the height direction (H) and is in communication with the first connecting pipe section (150) and the second connecting pipe section (160). A gas outlet passage (141) extending along the height direction (H) is formed in the gas outlet section (140). The gas outlet passage (141) is generally circular and is located generally in the center of the gas outlet section (140). The gas outlet passage (141) is located generally coaxial with the gas inlet passage (131) in the height direction (H). Exhaust gas is discharged from the plasma reaction chamber (110) through the gas outlet passage (141). The gas outlet passage (141) is in communication with the first connecting pipe section (150) and the second connecting pipe section (160). An outflow-side passage separation section (142) formed between the first connecting pipe section (150) and the second connecting pipe section (160) crosses the center of the gas outflow passage (141). In the gas outflow section (140), an outflow-side front step section (143a) and an outflow-side rear step section (143b) are formed, which are spaced apart in the front-rear direction (F) and are located at the front and rear, respectively. The outflow-side front step section (143a) and the outflow-side rear step section (143b) are located on the gas outflow passage (141), and a passage separation section (142) passes between the outflow-side front step section (143a) and the outflow-side rear step section (143b). Powder is well deposited on the outflow-side front step section (143a), the outflow-side rear step section (143b), and the outflow-side passage separation section (142).
[0028] In the gas outlet section (140), a first outlet-side igniter installation hole (145a) and a second outlet-side igniter installation hole (145b) are formed, each located at both ends in the width direction (W). Ignitioners can be inserted and installed in each of the first outlet-side igniter installation hole (145a) and the second outlet-side igniter installation hole (145b). The first outlet-side igniter installation hole (145a) is located on the side of the first connecting pipe section (150) and communicates with the plasma discharge channel (C). The first outlet-side igniter installation hole (145a) is closed by a cover (155). The second outlet-side igniter installation hole (145b) is located on the side of the second connecting pipe section (160) and communicates with the plasma discharge channel (C). The second outlet-side igniter installation hole (145b) is closed by a cover (155). On the wall surface forming the gas outflow passage (141), a first outflow passage wall opening (141a) and a second outflow passage wall opening (141b) are formed, facing each of the first outflow side igniter installation hole (145a) and the second outflow side igniter installation hole (145b).
[0029] The first connecting pipe section (150) and the second connecting pipe section (160) are spaced apart in the width direction (W) and each extend along the height direction (H) to connect the gas inlet section (130) and the gas outlet section (140), respectively. A first connecting passage (151) is formed inside the first connecting pipe section (150), and a second connecting passage (161) is formed inside the second connecting pipe section (160). Exhaust gas introduced into the plasma reaction chamber (110) through the gas inlet passage (131) flows through the first connecting passage (151) and the second connecting passage (161), respectively, and is discharged through the gas outlet passage (141).
[0030] In this embodiment, the chamber body (120) is described as being formed by combining a first chamber body (120a) formed integrally and a second chamber body (120b) formed integrally by a separate coupling structure. The first chamber body (120a) is formed with a gas inlet section (130), an upper section of the first connecting pipe section (150), and an upper section of the second connecting pipe section (160), and the second chamber body (120b) is formed with a gas outlet section (140), a lower section of the first connecting pipe section (150), and a lower section of the second connecting pipe section (160).
[0031] Two igniters (170) are installed in the chamber body (120) and receive high-voltage power from a power source (190 in FIG. 1) to ignite the plasma. One of the two igniters (170) is installed by being inserted into a second inlet-side igniter installation hole (135b) formed in the chamber body (120), and the other is installed in a second outlet-side igniter installation hole (145b) formed in the chamber body (120). The installation location of these igniters (170) is a location that is not affected by the powder mainly deposited on the inlet-side front step (133a), inlet-side rear step (133b), outlet-side front step (143a), and outlet-side rear step (143b) within the plasma reaction chamber (110), thereby preventing the loss of function of the igniters (170) due to the powder. In this embodiment, it is described that each of the two igniters (170) is installed in the second inlet-side igniter installation hole (135b) and the second outlet-side igniter installation hole (145b), but the present invention is not limited thereto. The two igniters (170) may be installed by inserting one into each of the two selected holes among the first inlet-side igniter installation hole (135a), the second inlet-side igniter installation hole (135b), the first outlet-side igniter installation hole (145a), and the second outlet-side igniter installation hole (145b), and this is also within the scope of the present invention.
[0032] In this embodiment, it is described that two igniters (170) are installed, but alternatively, only one may be installed, and this is also within the scope of the present invention.
[0033] In this embodiment, it is described that two igniters (170) are installed, but they may be installed differently, such as three or four, and this is also within the scope of the present invention. When three igniters (170) are installed, they are installed by inserting one into each of the three selected holes among the first inlet side igniter installation hole (135a), the second inlet side igniter installation hole (135b), the first outlet side igniter installation hole (145a), and the second outlet side igniter installation hole (145b). When four igniters (170) are installed, they are installed by inserting one into each of the first inlet side igniter installation hole (135a), the second inlet side igniter installation hole (135b), the first outlet side igniter installation hole (145a), and the second outlet side igniter installation hole (145b).
[0034] According to the present invention, by installing a plurality of igniters (170), the loss of function of the igniters (170) can be minimized.
[0035] The magnetic core (180) is positioned to surround the chamber body (120) of the plasma reaction chamber (110). Specifically, the magnetic core (180) is positioned to surround the first connecting pipe section (150) and the second connecting pipe section (160) provided in the chamber body (120). In this embodiment, the magnetic core (180) is described as a ferrite core commonly used for generating inductively coupled plasma.
[0036] A coil (not shown) is wound around a magnetic core (180) and connected to a power source (190 in FIG. 1). The coil (not shown) receives alternating current of radio frequency through the power source (190 in FIG. 1) to form an induced magnetic flux in the magnetic core (180). An induced electric field is generated by the induced magnetic flux formed in the magnetic core (180), and plasma is formed by the generated induced electric field.
[0037] Although the present invention has been described through the above embodiments, the present invention is not limited thereto. The above embodiments may be modified or changed without departing from the spirit and scope of the present invention, and those skilled in the art will understand that such modifications and changes are also within the scope of the present invention.
Claims
1. An inductively coupled plasma reactor that treats exhaust gas discharged from a semiconductor process chamber in which a semiconductor manufacturing process using process gas is performed by generating inductively coupled plasma, A chamber body providing a toroidal plasma discharge channel inside; A magnetic core positioned to surround the chamber body; and It includes an igniter installed in the chamber body to ignite plasma, and The chamber body comprises a gas inlet and a gas outlet positioned spaced apart along the height direction, and a first connecting pipe and a second connecting pipe positioned spaced apart along the width direction and extending along the height direction to connect the gas inlet and the gas outlet. A gas inlet passage is formed in the above gas inlet section, extending along the height direction and into which the exhaust gas is introduced. In the above gas discharge section, a gas discharge passage is formed that extends along the height direction and through which the exhaust gas is discharged. In the first connecting pipe section above, a first connecting passage is formed that extends along the height direction and communicates with the gas inlet passage and the gas outlet passage. In the second connecting pipe section above, a second connecting passage is formed that extends along the height direction and communicates with the gas inlet passage and the gas outlet passage. The igniter is located outside the first connecting passage and the second connecting passage in the width direction at the gas inlet or gas outlet. Inductively coupled plasma reactor for treating exhaust gases of semiconductor manufacturing facilities.
2. In Claim 1, In the above gas inlet section, an inlet-side front step and an inlet-side rear step are formed, which are spaced apart in the front and rear directions and are located at the front and rear, respectively. The above-mentioned inlet front step and the above-mentioned inlet rear step are located on the gas inlet passage, and In the above gas outlet, a front exit side step and a rear exit side step are formed, which are spaced apart in the front and rear directions and are respectively located at the front and rear. The above-mentioned front step portion and the above-mentioned rear step portion are located on the gas outflow passage, Inductively coupled plasma reactor for treating exhaust gases of semiconductor manufacturing facilities.
3. In Claim 1, The above igniter is for multiple individuals, Inductively coupled plasma reactor for treating exhaust gases of semiconductor manufacturing facilities.
4. In Claim 1, In the above gas inlet section, an igniter installation hole is formed, located at the widthwise end, into which the igniter is inserted and installed. Inductively coupled plasma reactor for treating exhaust gases of semiconductor manufacturing facilities.
5. In Claim 4, An opening is formed in the wall surface forming the above gas inlet passage, facing the above igniter installation hole. Inductively coupled plasma reactor for treating exhaust gases of semiconductor manufacturing facilities.
6. In Claim 1, In the above gas outlet, an igniter installation hole is formed, located at the widthwise end, into which the igniter is inserted and installed. Inductively coupled plasma reactor for treating exhaust gases of semiconductor manufacturing facilities.
7. In Claim 6, An opening is formed in the wall surface forming the above gas outflow passage, facing the above igniter installation hole. Inductively coupled plasma reactor for treating exhaust gases of semiconductor manufacturing facilities.
8. In Claim 1, Installed on a chamber exhaust pipe positioned upstream of a vacuum pump through which the exhaust gas flows and which discharges the exhaust gas from the semiconductor process chamber, Inductively coupled plasma reactor for treating exhaust gases of semiconductor manufacturing facilities.