Process chamber for the vapor phase deposition of a semiconductor layer, device for vapor phase deposition, method for heating substrates in a process chamber and method for vapor phase deposition of a semiconductor layer

Abstract

The invention relates to a process chamber (10) for the vapor phase deposition of a semiconductor layer on a substrate (2), comprising at least one conductive carrier system (1, 1', 1'') for transportation of at least one substrate (2) in a transportation direction (9) through the process chamber (10), wherein the carrier system (1, 1', 1'') comprises a carrier plate (4), on which the at least one substrate (2) is arranged, a device for introducing process gases into the process chamber (10), and a heating system for resistant heating of the carrier system (1, 1', 1'') and / or the at least one substrate (2) arranged on the carrier system (1), wherein the carrier system (1, 1', 1'') comprises at least two contact elements (3, 3') at diametrical sides of the conductive carrier system (1, 1', 1'') for contacting the heating system (11). The heating system (11) comprises two busbars (6), at least one of which is a segmented busbars (6) having at least two segments (7, 7'), wherein at least one contact element (3, 3') is in contact with one busbar (6). Furthermore, the invention relates to a device and method for vapor phase deposition of a semiconductor layer with a process chamber and a method for heating substrates in a process chamber.

Description

[0001] Title

[0002] Process chamber for the vapor phase deposition of a semiconductor layer, device for vapor phase deposition, method for heating substrates in a process chamber and method for vapor phase deposition of a semiconductor layer

[0003] Description

[0004] The invention relates to a process chamber for the vapor phase deposition of a semiconductor layer, preferably a silicon layer on a substrate, comprising at least one carrier system for transportation of at least one substrate in a transportation direction through the process chamber, a device for introducing process gases into the process chamber, and a heating system for resistant heating of the carrier system and / or the at least one substrate arranged on the carrier system, wherein the carrier system comprises at least two contact elements at diametrical sides of the conductive carrier system for contacting the heating system. The invention relates further to a device for vapor phase deposition of a semiconductor layer, preferably a silicon layer on a substrate according to claim 21. Furthermore, the invention relates to a method for heating substrates in a process chamber according to claim 22 and a method for vapor phase deposition of a semiconductor layer, in particular a silicon layer, according to claim 23.

[0005] For large-area electronic components, for example large-area lighting elements or photovoltaic solar cells, but also for mass-produced products, for example semiconductor diodes, there is a need for inexpensive semiconductor wafers having high crystal quality, since, in the case of such components, the material costs of the semiconductor wafer constitute a significant proportion of the costs of the overall product. There are known methods of producing semiconductor wafers, wherein semiconductor wafers are produced from silicon blocks ("ingots") by means of sawing methods. In this way, it is possible to produce high-quality, especially monocrystalline, semiconductor wafers. However, production costs are high, one reason for which is the loss of material in the sawing of the silicon blocks.

[0006] Therefore, alternative methods have been developed, in which a wafer layer is deposited on a substrate and then detached from the seed substrate. The detached wafer layer thus forms

[0007] 34905-P-WO Ga / su 08.12.2025the semiconductor wafer for production of the electronic component. Substrate carriers are used for accommodating substrates, for example for depositing semiconductor layers on a seed substrate. The seed substrates are arranged on the substrate carrier. The substrate carrier is then brought into a process position, e.g. by means of a process chamber guide in a process chamber.

[0008] For the growth of the semiconductor layer, uniform heating of the substrates is essential. Heating of multiple substrates on a carrier according to the state of the art has the disadvantage, that the temperature and heat distribution on the surface side of the substrates, on which the semiconductor layer should be deposited, is not that uniform as desired.

[0009] Furthermore, it is even more difficult to set the right temperature and / or adjust the right temperature during the process, in particular during a continuous process. In particular, the heating system itself has an influence on the temperature distribution as well as the carrier and the holding elements for the substrate on the substrate carrier.

[0010] For example, one method of heating substrates on a substrate carrier is to heat the substrate carrier directly by applying a current to the substrate carrier. However, applying a current on a substrate carrier is quite difficult during its movement. DE 102011017566 Al discloses a substrate holder comprising a planar frame with at least one substrate holder for substrates to be treated, contacting means for electrically contacting the substrate holder and at least one coupling plate which is fixed to the frame by releasable fixing means in such a way that it holds the substrate in the substrate holder and thereby has thermally conductive contact with the substrate and electrical contact with the frame.

[0011] The present invention is therefore based on the objective of providing a simple and controllable possibility to heat substrates on a substrate holder by resistant heating.

[0012] Furthermore, it is an objective of the present invention to control the heating of the substrate carrier more precisely and in particular, to achieve an even heat distribution.

[0013] These and further objectives are achieved by a process chamber for the vapor phase deposition of a semiconductor layer, preferably a silicon layer on a substrate in accordance with claim 1 and a device for vapor phase deposition of a semiconductor layer, preferably a

[0014] 34905-P-WO Ga / su 08.12.2025silicon layer on a substrate in accordance with claim 21. Furthermore, these and further objectives are also achieved by a method for heating substrates in a process chamber in accordance with claim 22 and a method for vapor phase deposition of a semiconductor layer, in particular a silicon layer, in accordance with claim 23.

[0015] Advantageous embodiments of the process chamber are described in claims 2 to 20.

[0016] The process chamber for the vapor phase deposition of a semiconductor layer, preferably a silicon layer, on a substrate, according to the present invention comprises at least one conductive carrier system for transporting of at least one substrate, preferably several substrates simultaneously, in a transportation direction through the process chamber, wherein the carrier system comprises a carrier plate, on which the at least one substrate is arranged. Furthermore, the process chamber comprises a device for introducing process gases into the process chamber, and a heating system for resistant heating of the carrier system and / or the at least one substrate arranged on the carrier system, wherein the carrier system comprises at least two contact elements on diametrical sides of the conductive carrier system for contacting the heating system.

[0017] The invention is characterized by the feature that the heating system comprises two busbars, at least one of which is a segmented busbars having at least two segments, wherein at least one contact element is in contact with one busbar.

[0018] With the segmented busbar, the current through the contact elements into the carrier system and in particular the carrier plate can be controlled better and high currents can be avoided. In particular, the segments of the segmented busbar can be controlled individually, so that the temperature of the carrier plate during its movement along the transportation direction can be controlled more precisely.

[0019] Preferentially, the busbar for a line conductor is segmented, wherein the busbar for a neutral conductor is not segmented. In a preferred embodiment, both busbars in the process chamber are segmented. In a further preferred embodiment, a length of one segment of the neutral conductor can be double the length of one segment of the line conductor. In another

[0020] 34905-P-WO Ga / su 08.12.2025preferred embodiment, the length of the segments of the segmented busbar are essentially the same. The complexity of the process chamber is reduced by using essentially identical segments for the busbars.

[0021] In another preferred embodiment, the contact elements are arranged over the entire width of the carrier system. A good contact between the carrier system and the contact element is achieved by this connection, in particular to achieve a uniform current distribution over the carrier system and the carrier plate. The width of the carrier system is essentially oriented along the transportation direction of the carrier system.

[0022] In a preferred embodiment, the contact elements comprise at least one, preferably two contact members, which are in direct contact with the busbar. The contact members of the contact elements are in direct contact with the busbar, wherein these contact members can be of the same material as the contact element or made of a different material with high conductivity, in particular higher conductivity compared to the contact element.

[0023] Preferentially, the contact member comprises a bearing element. In particular, the bearing element is a slide bearing or a ball bearing. The bearing element, which is in direct contact with the busbar, in particular the segmented busbar, allows a smooth sliding or rolling on the surface of the busbar with a reduced friction. More preferably, the bearing element has a higher conductivity compared to the carrier system and in particular to the carrier plate. Alternatively, the element for electrical contact can also be separated from the members for movement of the carrier, e.g. as sliding contact.

[0024] Alternatively or preferably in addition, the contact member comprises a plate element of high conductivity, in particular of higher conductivity than the carrier plate and / or the contact element. The plate element of the contact member is in direct contact with the busbar, in particular the segmented busbar. Preferably, the plate element has a low friction coefficient, so that the carrier system can move smoothly through the process chamber with reduced energy input, whereby a good and secure connection between the plate element and the busbar is achieved. In addition, the current can flow along the entire length of the plate

[0025] 34905-P-WO Ga / su 08.12.2025element from the busbar into the carrier plate, thus avoiding excessive heating of the contact member due to the high currents flowing through it.

[0026] In a preferred embodiment, the length of a segment of the segmented busbar has a length compared to or less than a width of the carrier system and / or the contact element and / or the contact member. In particular, the length of one segment of the segmented busbar is half the width of the carrier system and / or the contact element and / or the contact member. The width of the carrier system is substantially oriented along the transportation direction of the carrier system.

[0027] In a further preferred embodiment, at least two segments of the segmented busbar are connected to the same power supply. In particular, two neighboring segments are connected to the same power supply, preferably the power supply is switchable between the connected segments. Through the connection of neighboring segments to the same power source, the segments can be switched on and off depending on the position of the carrier system, in particular of the contact members of the contact element. This allows a better control of the current flow into the carrier system and therefore a better and more controllable heating of the carrier system.

[0028] In another preferred embodiment, the segments are switchable depending on a position of the carrier system, in particular along the transportation direction. Alternative or preferably in addition, the segments are switchable depending on a position of the contact members along the transportation direction.

[0029] Preferably, the busbars, in particular the segmented busbars are arranged on diametrical sides of the carrier system, in particular below and above the carrier system, in case the carrier system and / or the at least one substrate are arranged vertical or nearly vertical.

[0030] Preferentially, the busbar is flexible in at least one direction, in particular perpendicular to the transportation direction. The flexibility ensures a good connection between the busbar and the contact element and in particular with the contact member throughout the transport of the carrier system along the transportation direction. In particular, the busbar is flexible

[0031] 34905-P-WO Ga / su 08.12.2025perpendicular to the transportation direction and / or in a plane perpendicular to the transportation direction. For example, when the carrier system is arranged substantially vertical, the busbar is flexible in a horizontal plane. Preferably, both busbars are flexible in at least one direction. More preferably, both busbars are flexible in parallel planes spaced at a distance from each other.

[0032] Alternatively or preferably in addition, the busbar is cooled by a cooling device. Overheating of the busbar and unwanted heating of the carrier system by heat radiation from the busbar can be avoided with a cooled busbar. In particular, the busbar is cooled by water cooling or by another cooling liquid like oil or by a gaseous cooling medium like air.

[0033] Preferably, a contact element comprises at least two contact members, which are spaced apart from each other. Several contact members allow a better control of the current flow into the carrier system.

[0034] Preferentially, at least one contact member of the contact element is active for current application, whereby the entire current for heating the carrier system can be transferred via the at least one contact member. So, one contact member can be in contact with a currentcarrying segment of the busbar, while another contact member of the same contact element may be in contact with another segment of the segmented busbar, the contact of which to the power supply is interrupted at that time. To this end each contact element distributes the current evenly across the carrier plate.

[0035] Preferentially, the process chamber comprises means for monitoring the temperature of the substrates and / or the carrier systems, in particular the carrier plate. Means for monitoring the temperature of the substrates and / or the carrier plate are for example temperature sensors, temperature sensitive elements such as resistors, thermal cameras, resistivity sensors or sensors for measuring the current flow through the busbars. Preferably, the resistivity of each carrier system can be measured before or while the carrier system enters the process chamber.

[0036] 34905-P-WO Ga / su 08.12.2025Preferably, the at least one carrier system is continuously transported through the process chamber. More preferably, the carrier systems are moved into and moved out of the process chamber in a continuous process.

[0037] In a preferred embodiment, at least one contact element is arranged on a rear side of the carrier system, in particular on a rear side of the carrier plate, wherein the rear side is the surface side of the carrier system and / or the carrier plate, which is free of substrates and on which the substrates are not arranged, respectively. Preferably, both contact elements are arranged on the rear side.

[0038] Alternatively or preferably in addition, the contact elements are arranged on the side surfaces of the carrier plate, which are facing the busbars. In particular, the contact elements are arranged above and below the carrier plate of the carrier system.

[0039] Preferentially, the substrates can be arranged on both surface sides of the carrier plate, so that the capacity of the process chamber is further increased.

[0040] In a further preferred embodiment, the process chamber comprises a control device , which is designed to control at least the movement of the carrier system, the device for introducing process gases and / or the heating system and in particular the power supply. With the control device, the parts of the process chamber can be controlled in a coordinated manner. In particular, the movement of the carrier system along the transportation direction, in particular a continuous movement, and the power supply to the segments of the busbar can be synchronized for an uninterrupted and controlled heating of the carrier system. The means for monitoring the temperature can also be connected to the control device, so that for example the power supply to the segments can be adjusted depending on the temperature of and / or the temperature distribution on the carrier plate and / or depending on a variation in material, material parameters and / or thickness of the individual carrier plates in different carrier systems. In particular, the current flow can be adjusted depending on the resistivity of the carrier system. Alternatively or in addition, the temperature of the carrier plate can be adjusted by switching the power supply to the busbar, in particular to the segments of the busbar, on and off or by adjusting the current flow to the carrier plate.

[0041] 34905-P-WO Ga / su 08.12.2025Preferentially, the process chamber comprises several carrier systems, which are simultaneously employed in series. Preferably, the several carrier systems are moved continuously through the process chamber. The use of several carrier systems, which are moved along the transportation direction, increases the number of substrates that can be handled. In particular, a continuous process can be established. In addition, the at least one segmented busbar allows each carrier system to be heated individually. In particular, the current flow through one carrier system can be controlled independently of the current flow through another carrier system as these carrier systems are connected simultaneously to different segments of the segmented busbar. In this way, the temperature of each carrier system can be precisely controlled. Additionally, the at least one segmented busbar can provide a controllable, non-disruptive power supply during the movement of the carrier systems.

[0042] In another preferred embodiment, the carrier system comprises a ledge. The ledge at least partially "frames" the carrier system and in particular the carrier plate. Preferably, the ledge is arranged along the lateral surface of the carrier system, in particular along an elongation direction of the carrier plate perpendicular to the transportation direction. The ledge increases the stability of the carrier system, in particular because the ledge can support the carrier plate like a frame preferably together with the contact elements.

[0043] More preferably, the ledge is made of an electrically non-conductive material. By using an electrically non-conductive material, such as quartz or ceramic material like aluminum-oxide, shortcuts with the environment of the process chamber or other carrier systems can be avoided, so that the safety of the system is increased, in particular for high current flows.

[0044] In a further preferred embodiment, the carrier plate has at least one area of different thickness. In particular an area of increased thickness compared to the other parts of the carrier plate is arranged outside the position of the at least one substrate. Preferably, the area of increased thickness of the carrier plate is located towards the contact elements of the carrier system. These areas of increased thickness reduce the internal resistance so that a rapid and severe heating of the carrier plate can be avoided by applying high currents to the

[0045] 34905-P-WO Ga / su 08.12.2025contact elements. In particular, the contact elements are directly attached to the areas of increased thickness of the carrier plate of the carrier system.

[0046] Preferentially, the carrier plate comprises at least one recess for accommodating the at least one substrate. In particular the area for the at least one substrate has the smallest thickness within the carrier plate compared to other parts of the carrier plate. Heating of the at least one substrate may be enhanced in this embodiment. Preferably, each substrate is arranged within a recess of the carrier plate.

[0047] In another preferred embodiment, the carrier plate has a gradual decrease in thickness from one side to another side, in particular from a top to a bottom for a vertical or nearly vertical orientation of the carrier plate. Heat loss effects along a length of the thickness gradient of the carrier plate can be compensated for, in particular when the carrier plate is tilted towards a vertical plane.

[0048] Alternatively or preferably in addition, the carrier plate is segmented into a plurality of parts. In particular, each part of the carrier plate can accommodate a substrate.

[0049] Preferentially, the carrier system and / or the carrier plate is arranged vertically or horizontally within the process chamber. Alternatively, the carrier system and / or the carrier plate is inclined with an angle between 0° and 90° relative to a vertical plane, preferably with an angle between 0° and 15°.

[0050] In a preferred embodiment, the carrier plate has a thickness between 1 mm and 30 mm, preferably between 5 mm and 20 mm. The thickness of the conductive carrier plate allows a good resistant heating of the carrier plate.

[0051] Alternatively or preferably in addition, the carrier plate comprises a coating, wherein the coating preferably having a thickness between 10 pm and 200 pm, more preferably between 20 pm and 150 pm, highly preferably of about 100 pm. Preferably, the range of tolerance of the thickness for the coating is about + / - 50 pm for a thickness of about 100 pm. Preferentially, the coating consists of a semiconductor material, in particular silicon carbide (SiC). The coating

[0052] 34905-P-WO Ga / su 08.12.2025increases the chemical stability and durability of the carrier plate and also prevents reactions of the material of the carrier plate, in particular graphite, with the surrounding area in the process chamber.

[0053] In a further preferred embodiment, the at least one contact element on one side of the carrier plate forms a fixed, detachable connection with the busbar, wherein the at least one contact element on the other side of the carrier plate forms a floating or sliding connection. The fixed, detachable connection of a contact member of the contact element enables the carrier system to be easily replaced, in particular for maintenance or repair. Furthermore, a defective carrier system, in particular a system which does not ensure a uniform heating of the substrates on the carrier system, can be removed and replaced by another one.

[0054] Preferentially, the contact members of the contact element have a hook-like structure for a fixed, detachable connection.

[0055] Alternatively or preferably in addition, the contact elements are made of highly electrically conductive material, preferably metal, in particular tungsten or tungsten carbide. Preferably, the contact elements have a higher conductivity compared to the carrier plate.

[0056] Preferentially, the carrier plate is made of graphite or graphite-containing material.

[0057] Alternatively or preferably in addition, the carrier plate may have a shape which differs from a particular plate-like shape. Preferentially, the both surface sides of the carrier plate can have different shapes, wherein one side of the carrier plate, preferably the side receiving the substrates, having a plate-like shape, wherein the other side having a texture, such as a meandering shape. The shape of the carrier plate can influence the heat distribution over the whole carrier plate for a more uniform heating of the substrates on the carrier plate of the carrier system.

[0058] The object of the invention is also solved by a device for vapor phase deposition of a semiconductor layer, preferably a silicon layer on a substrate, comprising a process chamber or a preferred embodiment of the process chamber as mentioned above. The device for vapor

[0059] 34905-P-WO Ga / su 08.12.2025phase deposition further comprises one or more sources for the necessary process gases, preferably a pumping system and preferably means for monitoring the deposition process.

[0060] The object of the invention is also solved by a method for heating substrates in a process chamber as previously outlined or a preferred embodiment thereof, wherein at least one substrate is arranged on a carrier system and wherein several carrier systems are moved simultaneously along a transportation direction through the process chamber. The method is characterized by the feature that a power supply to a segment of the at least one segmented busbar is controlled depending on the position of the carrier system in the process chamber and / or depending on a temperature of the carrier plate of the carrier system and / or on a temperature of the at least one substrate on the carrier plate.

[0061] In particular, controlling the power supply to a segment of a segmented busbar comprises switching the power on and off and / or adjusting the current flow for a particular segment. The temperature of and the current flow into each carrier system can be controlled individually, so that homogeneous conditions for different carrier systems can be achieved.

[0062] The object of the invention is also solved by a method for vapor phase deposition of a semiconductor layer, particularly a silicon layer on a substrate, wherein the method is carried out in a device for vapor phase deposition as previously outlined, wherein process gases are introduced in the process chamber of the device for reacting on a surface of the substrate to build the semiconductor layer on the at least one substrate, and wherein this method comprises a method for heating substrates in a process chamber as previously outlined. Due to the controlled heating of the at least one substrate on a carrier system, homogeneous conditions for the substrates on different carriers can be achieved, so that the semiconductor layers are more uniform and of higher quality.

[0063] The advantages of the invention are explained by way of example with reference to embodiments and the figures.

[0064] Figure 1 shows a process chamber in a schematic side view with several carrier systems; and

[0065] 34905-P-WO Ga / su 08.12.2025Figure 2 a sectional view of a part of the carrier system around the contact element.

[0066] In Figure 1, a process chamber 10 for the vapor phase deposition of a silicon layer is shown in a schematic manner. In the process chamber 10, three carrier systems 1, 1', 1" are moved through the process chamber 10 along the transportation direction 9. On each carrier system 1, 1', 1" , several substrates 2 are mounted and accommodated on a carrier plate 4. The carrier plate 4 is made of graphite and has a thickness of approximately 5 mm to 20 mm.

[0067] Furthermore, the carrier plate 4 comprises a coating at least on the surface side on which the substrates 2 are arranged, preferably on all sides, wherein the coating is made of silicon carbide with a thickness of about 100 pm + / - 50 pm. With the coating, aging and decomposition of the carrier plate 4 made of graphite due to chemical reactions in the atmosphere of the process chamber 10 can be prevented. In order to accommodate the substrates 2 on the carrier plate 4, the carrier plate 4 can have recesses, in which the thickness of the carrier plate 4 is reduced compared to other parts of the carrier plate 4. During the continuous transport of the carrier system 1, 1', 1" through the process chamber 10, the carrier plate 4 and the carrier systems 1, 1', 1" are arranged substantially vertically.

[0068] During the transport of the substrates 2 on the carrier system 1, 1', 1" through the process chamber 10 along the transportation direction 9, a silicon layer is deposited on the substrates 2 by vapor phase deposition while transportation. For the growth of the silicon layer on the substrates 2, the process chamber 10 further comprises a device for introducing process gases into the process chamber 10, wherein the process gases are preferably directed onto the surface of the substrates 2 (not shown). The process gases react on the surface of the substrates 2, resulting in a single crystalline silicon layer. The substrates 2 are also made of silicon and further comprise a separation layer on their surface to easily remove the grown silicon layers from the substrates 2 at the end of the deposition process.

[0069] For the deposition of a silicon layer by vapor phase deposition on a substrate 2 in a process chamber 10, heating the substrates 2 on the carrier system 1, 1', 1" is essential. For heating the substrates 2 on the carrier system 1, 1', 1", the process chamber 10 further comprises a heating system 11 for resistant heating of the carrier system 1, 1', 1", in particular of the

[0070] 34905-P-WO Ga / su 08.12.2025carrier plate 4, and of the substrates 2 on the carrier system 1, 1', 1" respectively. The heating system 11 comprises several power supply 8, 8' and two busbars 6, which in the present embodiment are arranged above and below the carrier system 1, 1’, 1". The busbars 6 are segmented into several segments 7 , 7', which are arranged next to each other along the transportation direction 9. The segments 7 , 7' of both busbars 6, the line conductor, which is arranged above the carrier systems 1, 1', 1", and the neutral conductor, which is arranged below the carrier systems 1, 1', 1", are substantially identical, in particular substantially identical in their length.

[0071] For contacting the busbar 6, the carrier system 1, 1', 1" comprises contact elements 3, 3' on diametrical sides of the carrier system 1, 1', 1". The diametrical sides of the carrier system 1, 1', 1" refer to sides of the carrier system 1, 1', 1”, which are spaced apart in elongation direction of the carrier system 1, 1', 1", which is perpendicular to the transportation direction 9. The contact elements 3, 3' are made of metal and are substantially arranged over the entire width of the carrier system 1, 1', 1" and the carrier plate 4 respectively. The width of the carrier system 1, 1', 1" extends essentially along the transportation direction 9 of the carrier system 1, 1', 1". Due to the contact elements 3, 3' over the entire width of the carrier plate 4, a good and stable contact between the contact elements 3, 3' and the carrier plate 4 is achieved. This results in an even distribution of the current flow through the carrier plate 4 and, consequently, in a good heating of the carrier plate 4.

[0072] For the connection between the busbar 6 and the contact element 3, 3', each contact element 3, 3' further comprises two contact members 3a. In the present embodiment, the contact members 3a, which are spaced apart from each other, are formed by bearing elements in the form of roller bearings. The use of roller bearings as contact members 3a ensures a smooth and, in particular, friction reduced movement of the carrier system 1, 1', 1" in the process chamber 10 along the transportation direction 9. Furthermore, the roller bearings are made of metal with high conductivity, so that the current flow is effectively conducted into the carrier system 1, 1', 1". For a good conductive connection between the busbar 6 and the contact element 3, 3' and contact members 3a respectively, the busbar 6 is flexible in a direction perpendicular to the transportation direction 9. In the present embodiment, the busbars 6 are

[0073] 34905-P-WO Ga / su 08.12.2025both flexible in a direction into and out of the drawing layer as well as along the elongation direction of the carrier plate 4 along the length of the carrier plate 4.

[0074] In the present embodiment of Figure 1, two neighboring segments 7 , 7' of the segmented busbar 6 are connected to the same power supply 8, 8', wherein the power is being switched between the two neighboring segments 7 , 7'. Switching the power supply from one segment 7 , 7' to another segment 7 , 7' is dependent on the position of the carrier system 1, 1', 1" and in particular a position of the contact member 3a of the contact element 3, 3' along the transportation direction 9. In the present embodiment, the power is supplied to one segment 7 , 7' and the current flows only through one contact member 3a into the contact element 3, 3' and the carrier plate 4 of the carrier system 1, 1' , 1". Thus, only one contact member 3a is active for current application and the entire current for heating the carrier system 1, 1', 1" is transferred only through this one contact member 3a. The other contact member 3a is still in contact with the other segment 7, 7' of the busbar 6, wherein this segment is disconnected from the power supply 8, 8'. In order to avoid an overheating of the segments 7, 7' of the busbar 6, these segments 7, 7' and in particular the entire busbar 6 can be cooled by a cooling device.

[0075] In order to avoid a shortcut between neighboring carrier systems 1, 1', 1", the carrier system 1, 1', 1" further comprises at least partially a ledge 5 on the lateral surfaces made of an electrically non-conductive material like aluminum-oxide. The ledge 5 is oriented along the elongation direction of the carrier plate 4 along the lateral surfaces. In the present embodiment, the lateral surfaces of the carrier system 1, 1', 1" with the exception of the lateral surfaces next to the busbars 6 are completely surrounded by the ledge 5 in order to prevent electric contact between neighboring carrier systems 1, 1', 1". Furthermore, the ledge 5 enhances the stability of the carrier system 1, 1', 1", in particular because the ledge 5 frames the carrier plate 4 together with the contact elements 3, 3'.

[0076] As mentioned above, the power supply 8, 8' to certain segments 7, 7' of the busbar 6 depends on the position of the carrier system 1, 1', 1" and in particular the contact member 3a. In order to control these processes, the process chamber 10 also comprise a control device for controlling the movement of the carrier system 1, 1', 1", the heating system 11 and the device

[0077] 34905-P-WO Ga / su 08.12.2025for introducing the necessary process gases. Depending on the position of the carrier system 1, 1', 1" along the transportation direction 9, the segments 7 , 7' of the segmented busbar 6 are connected with the power supply 8, 8' in order to achieve and maintain a certain temperature and temperature distribution of the carrier plate 4. Therefore, the power supply to the segments 7 , 7' of the busbar can be switched on and off depending on the position of the carrier system 1, 1' , 1" and / or the temperature and / or the temperature distribution of the carrier plate 4 and / or the substrates 2.

[0078] For monitoring the temperature of the carrier plate 4 and / or the substrates 2 on the carrier plate 4, the process chamber 10 comprises means for monitoring the temperature of the carrier plate 4 and / or of the substrates 2 such as thermal cameras. Depending on the temperature of the carrier plate 4 and / or the substrates 2 on the carrier plate 4, the current flow into the respective carrier system 1, 1' , 1" is activated or not or can be adjusted.

[0079] Furthermore, also the current flow itself can be controlled depending on the temperature of the carrier plate 4 and / or the substrates 2 on the carrier plate 4 to achieve a previously set temperature of the carrier plate 4 and / or the substrates 2. The switching of the segments 7, 7' of the busbars 6 and in particular the current flow to the segments 7, 7' of the busbars 6 is also controlled by the control device.

[0080] Although several carrier systems 1, 1', 1" are moved simultaneously in the process chamber 10 along the transportation direction 9, the power supply to each carrier system 1, 1', 1" can be adjusted individually by increasing or decreasing the power of the power supply 8, 8' to the segments 7, 7' of the segmented busbar 6. This permits a non-disruptive, but controllable power supply to each carrier system 1, 1', 1" during its movements along the transportation direction 9. By controlling the power supply and the current flow into the carrier system 1, 1', 1", also the temperature of each carrier system 1, 1', 1" and in particular of each carrier plate 4 of the carrier systems 1, 1', 1" can be controlled more precisely. The overall result is a better, uniform, and higher quality silicon layer deposited on the substrates 2.

[0081] In Figure 2, an area around the contact element 3 is shown in more detail. In this embodiment, the contact member 3a is a roller bearing, which is rolling in the busbar 6. The roller bearing as contact member 3a is mounted in and surrounded by the contact element 3. The entire

[0082] 34905-P-WO Ga / su 08.12.2025current flow into the contact element 3 and the carrier plate 4 is conducted via the roller bearing. Alternatively, the contact member 3a can also be a slide contact, which is movable within the tray of the busbar 6.

[0083] The contact element 3 is directly connected to the carrier plate 4. As the contact element 3 has a thicker structure and is made of higher conductive material, e.g. metal, as compared to the carrier plate 4, on which the substrates 2 are arranged, there is a transition area of the carrier plate 4, in which the thickness increases. The increased thickness of the carrier plate 4 compared to the main area of the carrier plate 4, on which the substrates 2 are arranged, avoids a strong heating of the carrier plate 4 due to the high currents flowing through the contact element 3 into the carrier plate 4.

[0084] An area around the further contact element 3' can be designed in the same way or can differ from the embodiment shown in Figure 2. In particular, the further contact element 3' may comprise only a plate-like element as contact member 3a for contacting the busbar 6, so that there is only a sliding or floating contact with the busbar 6.

[0085] In a further embodiment of the process chamber 10, not shown in detail, both contact elements 3, 3' comprise as contact member 3a a plate element of high conductivity, for example made of tungsten carbide. In particular, the contact element 3, 3' and contact member 3a has a higher conductivity compared to the material of the carrier plate 4. The plate element as contact member 3a is arranged essentially in the middle of the width of the carrier system 1, 1', 1" and has a length, which is essentially identical to the length of a segment 7, 7' of the segmented busbar 6.

[0086] Due to the elongated form of the contact member 3a as plate element, the current from the segmented busbar 6 into the carrier plate 4 is flowing over the entire length of the plate element, so that excessive heating of the contact member 3a due to the high currents flowing through it is avoided. Compared to the rolling bearing as contact member 3a as shown in Figure 1, the plate element as contact member 3a stays cooler during transport of the carrier systems 1, 1', 1" through the process chamber 10, as this plate element as contact member has a larger contact surface with the busbar 6.

[0087] 34905-P-WO Ga / su 08.12.202534905-P-WO Ga / su 08.12.2025List of reference signs

[0088] 1, 1', 1" carrier system

[0089] 2 substrate

[0090] 3, 3' contact element

[0091] 3a contact member

[0092] 4 carrier plate

[0093] 5 ledge

[0094] 6 busbar

[0095] 7 , 7' segments

[0096] 8, 8' power supply

[0097] 9 transportation direction 10 process chamber

[0098] 11 heating system

[0099] 34905-P-WO Ga / su 08.12.2025

Claims

Claims1. Process chamber (10) for the vapor phase deposition of a semiconductor layer, preferably a silicon layer, on a substrate (2), comprising at least one conductive carrier system (1, 1', 1") for transportation of at least one substrate (2), preferably several substrates (2) simultaneously, in a transportation direction (9) through the process chamber (10), wherein the carrier system (1, 1', 1") comprises a carrier plate (4), on which the at least one substrate (2) is arranged,a device for introducing process gases into the process chamber (10), anda heating system for resistant heating of the carrier system (1, 1', 1") and / or the at least one substrate (2) arranged on the carrier system (1), wherein the carrier system (1, 1', 1") comprises at least two contact elements (3, 3') at diametrical sides of the conductive carrier system (1, 1', 1") for contacting the heating system (11), characterized in that the heating system (11) comprises two busbars (6), at least one of which is a segmented busbar (6) having at least two segments (7, 7'), wherein at least one contact element (3, 3') is in contact with one busbar (6).

2. Process chamber (10) according to claim 1, characterized in that the contact elements (3, 3') comprise at least one, preferably two contact members (3a), which are in direct contact with the busbar (6).

3. Process chamber (10) according to claim 2, characterized in that the contact member (3a) comprises a bearing element or a plate element with high conductivity, in particular with a higher conductivity compared to the carrier plate (4), wherein the plate element has preferably a low friction coefficient.

4. Process chamber according to one of the preceding claims, characterized in that the length of one segment (7, 7') of the segmented busbar (6) has a length compared to or less than a width of the carrier system (1, 1', 1"), in particular that the length of one segment (7, 7') of the segmented busbar (6) has half the width of the carrier system (1, 1', 1").34905-P-WO Ga / su 08.12.20255. Process chamber (10) according to one of the preceding claims, characterized in that at least two segments (7' , 7") are connected to the same power supply (8, 8'), in particular two neighboring segments (7', 7") are connected to the same power supply (8, 8'), preferably that the power supply (8, 8') is switchable between the connected segments ( 7").

6. Process chamber (10) according to one of the preceding claims, characterized in that the busbar (6) is flexible in at least one direction, in particular perpendicular to the transportation direction (9) and / or that the busbar (6) is cooled by a cooling device.

7. Process chamber according to one of the preceding claims, characterized in that the segments (7, 7') are switchable in dependence of a position of the carrier system (1, 1', 1").

8. Process chamber at least according to claim 2, characterized in that the segments (7, 7') are switchable in dependence of a position of the contact members (3a) along the transportation direction (9) and / or that at least one contact member (3a) of the contact element (3, 3') is active for current application, whereby the entire current for heating the carrier system (1, 1', 1") is transferred via at least one contact member (3a).

9. Process chamber (10) according to one of the preceding claims, characterized in that the process chamber (10) comprises a control device , which is designed to control at least the movement of the carrier system (1, 1', 1"), the device for introducing process gases and / or the heating system (11) and in particular the power supply (8, 8').

10. Process chamber (10) according to one of the preceding claims, characterized in that the process chamber (10) comprises several carrier systems (1, 1', 1"), which are simultaneously employed in series.34905-P-WO Ga / su 08.12.202511. Process chamber (10) according to one of the preceding claims, characterized in that the carrier system (1, 1', 1") comprises a ledge (5), in particular made of electrically non- conductive material.

12. Process chamber (10) according to one of the preceding claims, characterized in that the carrier plate (4) has at least one area of different thickness, in particular that an area outside the arrangement of the at least one substrate has an increased thickness, preferably that the area of increased thickness of the carrier plate (4) is arranged towards the contact elements (3, 3') of the carrier system (1, 1', 1").

13. Process chamber (10) according to one of the preceding claims, characterized in that the carrier plate (4) comprises recesses for accommodating the at least one substrate (2), in particular that the area for the at least one substrate (2) has the smallest thickness within the carrier plate (4).

14. Process chamber (10) according to one of the preceding claims, characterized in that the carrier plate (4) has a gradual thickness decrease from one side to another side, in particular from a top to a bottom for a vertical or nearly vertical orientation of the carrier plate (4), and / or that the carrier plate (4) is segmented in several parts.

15. Process chamber (10) according to one of the preceding claims, characterized in that the carrier system (1, 1', 1") and / or the at least one carrier plate (4) is arranged vertically or horizontally within the process chamber (10) or is inclined with an angle between 0° and 90° relative to a vertical plane, preferably with an angle between 0° and 15°.

16. Process chamber (10) according to one of the preceding claims, characterized in that the carrier plate (4) has a thickness between 1 mm and 30 mm, preferably between 5 mm and 20 mm and / or that the carrier plate (4) comprises a coating, wherein the coating has preferably a thickness between 10 pm and 200 pm, more preferably between 20 pm and 150 pm, even more preferably of about 100 pm.34905-P-WO Ga / su 08.12.202517. Process chamber (10) according to claim 16, characterized in that the coating consists of a semiconductor material, in particular SiC.

18. Process chamber (10) according to one of the preceding claims, characterized in that the at least one contact element (3, 3') on one side of the carrier plate (4) forms a fixed, detachable connection with the busbar (6), wherein the at least one contact element (3, 3') on another side of the carrier plate (4) forms a floating or sliding connection.

19. Process chamber (10) according to one of the preceding claims, characterized in that the contact members (3a) of the contact element (3, 3') have a hook like structure for a fixed, detachable connection and / or that the contact elements (3, 3') are made of high electrically conductive material, preferably metal.

20. Process chamber (10) according to one of the preceding claims, characterized in that the carrier plate (4) is made of graphite or graphite containing material.

21. A device for vapor phase deposition of a semiconductor layer, in particular a silicon layer on a substrate (2), comprising a process chamber (10) according to one of the previous claims.

22. Method for heating substrates (2) in a process chamber (10) according to one of the claims 1 to 20, wherein at least one substrate (2) is arranged on the carrier system (1, 1', 1") and several carrier systems (1, 1', 1") are moved simultaneously along a transportation direction (9) through the process chamber (10), characterized in that a power supply (8, 8') to a segment (7, 7') of the at least one segmented busbar (6) is controlled depending on the position of the carrier system (1, 1', 1") in the process chamber (10) and / or depending on a temperature of the carrier plate (4) of the carrier system (1, 1', 1") and / or on a temperature of the substrates (2) on the carrier plate (4).

23. Method for vapor phase deposition of a semiconductor layer, particularly a silicon layer on a substrate (2), wherein the method is carried out in a device according to the claim 21, and wherein process gases are introduced in the process chamber (10) of the device34905-P-WO Ga / su 08.12.2025for reacting on a surface of the substrate (2) to build the semiconductor layer on the substrate, characterized in that this method comprises a method for heating substrates (2) in a process chamber (10) according to claim 22.34905-P-WO Ga / su 08.12.2025

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