Fluorinated metal-amidrazonide complexes and method of using the same for deposition of metal-containing thin films
Fluorinated metal-amidrazonide precursors with the formula M-[EC(CaFbHc)=N-NR1R2]x[D]y[R3]z enable efficient and uniform deposition of metal-containing films, overcoming the limitations of existing techniques by providing thermal stability and cleaner processes.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- LAIR LIQUIDE SA POUR LETUDE & LEXPLOITATION DES PROCEDES GEORGES CLAUDE
- Filing Date
- 2025-12-12
- Publication Date
- 2026-07-09
AI Technical Summary
Current thin-film deposition techniques face challenges with high corrosiveness, toxicity, greenhouse gas emissions, poor uniformity, and narrow process windows due to the use of fluorine-containing precursors, particularly in the deposition of metal-containing films.
The use of fluorinated metal-amidrazonide precursors with the general formula M-[EC(CaFbHc)=N-NR1R2]x[D]y[R3]z for vapor deposition methods, including CVD and ALD, to form metal-containing films, which are thermally stable and volatile, addressing issues of chemisorption and process control.
This approach provides a cleaner, more uniform deposition process with improved thermal stability and wider process windows, enabling the formation of high-quality metal-containing films suitable for electronics, optics, and energy applications.
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