Polishing slurry composition, method for preparing same, and method for manufacturing semiconductor device

Abstract

An embodiment provides a polishing slurry composition comprising: water; polishing particles having an average particle diameter of 10 nm to 100 nm; and a pH adjuster, wherein the ratio of the number of polishing particles having a particle diameter of 10 nm to 30 nm to the total number of particles exceeds 10%. The polishing slurry composition according to the embodiment may comprise a high proportion of polishing particles having a fine particle diameter.

Description

Polishing slurry composition, method for manufacturing the same, and method for manufacturing a semiconductor device

[0001] The examples relate to a polishing slurry composition, a method for manufacturing the same, and a method for manufacturing a semiconductor device.

[0002] Chemical Mechanical Polishing (CMP) is a technique that polishes the surface of a sample to a desired level by injecting a polishing slurry into the interface between the polishing pad and the target while frictionally rubbing the pad against the target surface. As modern CMP is applied to the manufacturing of large-scale semiconductor integrated circuits, it is utilized as an essential technique for devices such as transistors, the planarization of interlayer insulating film surfaces in multilayer wiring, the planarization of various film materials such as oxide and nitride films, and the formation of tungsten or copper wiring. As the integration density of semiconductor devices increases and chip sizes decrease each year, the surface structure of semiconductor devices becomes more complex, and the step height between interlayer films becomes larger. Therefore, high-resolution lithography and atomic-level planarization technology are required for the Chemical Mechanical Polishing (CMP) process applied in the manufacturing process of semiconductor devices. This CMP process is a method for planarizing films by simultaneously utilizing physical friction and chemical reactions, and distinctly different polishing results can be produced even by minute differences in the process components and / or process solutions used. Consequently, the precision required for the manufacturing and design of such process components and / or process solutions is currently being enhanced to a higher level. Regarding such semiconductor polishing processes, Korean Registered Patent No. 10-0946421, etc., is disclosed.

[0003] The embodiments aim to provide a polishing slurry composition having an improved polishing rate and low defect induction, a method for manufacturing the same, and a method for manufacturing a semiconductor device.

[0004] The polishing slurry composition according to the example comprises water; polishing particles having an average particle size of 10 nm to 100 nm; and a pH adjuster, wherein the ratio of the number of polishing particles having a particle size of 10 nm to 30 nm exceeds 10% of the total number of particles.

[0005] In a polishing slurry composition according to one embodiment, the ratio of the number of polishing particles having a particle size of 10 nm to 30 nm may be 10% to 90%.

[0006] In a polishing slurry composition according to one embodiment, the ratio of the number of polishing particles having a particle size of 10 nm to 30 nm may be 20% to 90%.

[0007] In a polishing slurry composition according to one embodiment, the ratio of the number of polishing particles having a particle size of 10 nm to 30 nm may be 30% to 70%.

[0008] In a polishing slurry composition according to one embodiment, the polishing particles include fifth polishing particles having a particle size of 25 nm to 30 nm, and the ratio of the number of fifth polishing particles may be 10% to 30% relative to the total number of particles.

[0009] In a polishing slurry composition according to one embodiment, the polishing particles include a fourth polishing particle having a particle size of 20 nm to 25 nm, and the ratio of the number of the fourth polishing particles may be 10% to 25% of the total number of particles.

[0010] In a polishing slurry composition according to one embodiment, the polishing particles include third polishing particles having a particle size of 15 nm to 20 nm, and the ratio of the number of third polishing particles may be 2% to 10% relative to the total number of particles.

[0011] In a polishing slurry composition according to one embodiment, the polishing particles include second polishing particles having a particle size of 10 nm to 15 nm, and the ratio of the number of second polishing particles may be 2% to 10% relative to the total number of particles.

[0012] In a polishing slurry composition according to one embodiment, the polishing particles include sixth polishing particles having a particle size of 30 nm to 35 nm, and the ratio of the number of sixth polishing particles may be 20% to 40% of the total number of particles.

[0013] In a polishing slurry composition according to one embodiment, the polishing particles include seventh polishing particles having a particle size of 35 nm to 40 nm, and the ratio of the number of seventh polishing particles may be 20% to 40% of the total number of particles.

[0014] In a polishing slurry composition according to one embodiment, the polishing particles include eighth polishing particles having a particle size of 40 nm to 45 nm and ninth polishing particles having a particle size of 45 nm to 50 nm, the ratio of the number of eighth polishing particles is 5% to 15% of the total number of particles, and the sum of the number of ninth polishing particles may be 1% to 6% of the total number of particles.

[0015] In a polishing slurry composition according to one embodiment, the ratio of the number of polishing particles having a particle size of 50 nm to 75 nm may be less than 3% of the total number of particles.

[0016] A method for preparing a polishing slurry composition according to an example comprises the steps of: preparing a first aqueous dispersion containing finely divided polishing particles; classifying the finely divided polishing particles to prepare a second aqueous dispersion containing polishing particles; and adjusting the pH of the second aqueous dispersion, wherein the ratio of the number of polishing particles having a particle size of 10 nm to 30 nm exceeds 10% relative to the total number of particles.

[0017] A method for manufacturing a semiconductor device according to an embodiment comprises the steps of: preparing a semiconductor substrate; spraying a polishing slurry composition onto the semiconductor substrate; and polishing the semiconductor substrate, wherein the polishing slurry composition comprises water; polishing particles having an average particle size of 10 nm to 100 nm; and a pH adjuster, and wherein the ratio of the number of polishing particles having a particle size of 10 nm to 30 nm in the polishing slurry composition exceeds 10% relative to the total number of particles.

[0018] The polishing slurry composition according to the example may include polishing particles having a particle size of 10 nm to 30 nm in an appropriate proportion. That is, the polishing slurry composition according to the example may include polishing particles having a fine particle size in a high proportion.

[0019] Accordingly, the polishing slurry composition according to the embodiment can precisely polish the semiconductor substrate using the fine polishing particles. Accordingly, the polishing slurry composition according to the embodiment can suppress defects that may occur during the polishing process on the semiconductor substrate.

[0020] In addition, the polishing slurry composition according to the example may appropriately include polishing particles having a large particle size. Accordingly, the polishing slurry composition according to the example may have an improved polishing speed.

[0021] The polishing slurry composition according to the example contains abrasive particles having a fine particle size and abrasive particles having a large particle size in appropriate amounts, so it can have an improved polishing speed while having low defects.

[0022] Figure 1 is a diagram illustrating the process of preparing the above-mentioned abrasive particle dispersion.

[0023] Figure 2 is a diagram illustrating the process of classifying abrasive particles.

[0024] FIG. 3 schematically illustrates the apparatus configuration for a method of manufacturing the semiconductor device according to one embodiment.

[0025] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments or examples described below. However, the present invention is not limited to the embodiments or examples disclosed below but may be implemented in various different forms. The embodiments or examples specified below are provided merely to ensure that the disclosure of the present invention is complete and to inform those skilled in the art of the scope of the invention, and the scope of the rights of the present invention is defined by the scope of the claims.

[0026] In the drawings, the thickness of some components has been enlarged as necessary to clearly represent layers or regions. Additionally, in the drawings, the thickness of some layers and regions has been exaggerated for convenience of explanation. Throughout the specification, the same reference numerals refer to the same components.

[0027] Furthermore, when a part such as a layer, film, region, or plate is described in this specification as being "above," "on," or "on the upper side" of another part, this is interpreted to include not only the case where it is "immediately above" the other part, but also the case where there is another part in between. When a part is described as being "immediately above" another part, it is interpreted to mean that there is no other part in between. Additionally, when a part such as a layer, film, region, or plate is described as being "below," "under," or "below" another part, this is interpreted to include not only the case where it is "immediately below" the other part, but also the case where there is another part in between. When a part is described as being "immediately below" another part, it is interpreted to mean that there is no other part in between.

[0028] Hereinafter, embodiments according to the present invention will be described in detail.

[0029] FIG. 1 is a diagram illustrating the process of preparing the above-mentioned abrasive particle dispersion. FIG. 2 is a diagram illustrating the process of classifying the abrasive particles.

[0030] In order to prepare the polishing slurry composition according to the example, a polishing particle dispersion may be prepared.

[0031] The above abrasive particle dispersion may include water and abrasive particles. Additionally, an additive such as a dispersant, a surfactant, or a pH adjuster may be further mixed into the above abrasive particle dispersion to prepare an abrasive slurry composition according to the example.

[0032] The average particle size (D50) of the abrasive particles may be about 10 nm to about 300 nm. The average particle size (D50) of the abrasive particles may be about 10 nm to about 200 nm. The average particle size (D50) of the abrasive particles may be about 10 nm to about 100 nm. The average particle size of the abrasive particles may be about 20 nm to about 100 nm.

[0033] The particle size of the above abrasive particles can be measured by Malban's zetasizer.

[0034] Since the average particle size of the abrasive particles is as described above, the abrasive slurry composition according to the example can have an improved abrasive rate while reducing defects and dishing.

[0035] The above abrasive particles may include silica. The above abrasive particles may include colloidal silica. The above abrasive particles may be silica particles.

[0036] The above silica particles refer to a composition in the shape of particles in which silica (SiO2) is the main component, and should be understood as a concept that encompasses cases containing trace amounts of heterogeneous components. Here, 'trace amount' may refer to a content of about 0.005% to about 0.03% by weight of the total 100% by weight of the silica particles.

[0037] The average particle size of the silica particles may be about 5 nm to about 150 nm, for example, about 5 nm to about 100 nm, for example, about 5 nm to about 80 nm, for example, about 10 nm to about 80 nm, for example, about 30 nm to about 50 nm, for example, about 35 nm to about 50 nm, for example, about 40 nm to about 50 nm, for example, about 42 nm to about 48 nm. The average particle size of the abrasive particles may be measured by a Malvern Zetasizer. By including silica particles of such size, not only chemical etching but also physical etching functions of the abrasive slurry composition can be adequately secured.

[0038] The zeta potential of the polishing slurry composition may be +20mV to +45mV or, for example, about +22mV to +40mV. Although the measurement method for the zeta potential of the silica particles in the polishing slurry composition is not particularly limited, for example, it may be measured by introducing about 1 mL of the polishing slurry composition into a measurement cell using a zeta potential measuring device (Malvern, Zeta-sizer Nano ZS). For example, the zeta potential value may be the average value of about 100 measurements. By satisfying the aforementioned range for the zeta potential of the silica particles in the polishing slurry composition, the anti-aggregation effect of the polishing slurry composition and the realization of the desired polishing selectivity ratio may be more advantageous.

[0039] The above abrasive particle dispersion can be manufactured by the following process.

[0040] The method for preparing the above-described abrasive particle dispersion may include the steps of: preparing a first aqueous dispersion containing finely divided abrasive particles; classifying the finely divided abrasive particles to prepare a second aqueous dispersion containing abrasive particles; adding a dispersant to the second aqueous dispersion; and adjusting the pH of the second aqueous dispersion.

[0041] In order to manufacture the above abrasive particle dispersion, first, a first aqueous dispersion containing finely divided abrasive particles may be prepared.

[0042] The first aqueous dispersion above may include the finely divided abrasive particles and water.

[0043] The above water may include deionized water.

[0044] The above fine-grade abrasive particles may include silica. The above fine-grade abrasive particles may include colloidal silica. The above abrasive particles may be silica particles.

[0045] The average particle size (D50) of the above fine-grade abrasive particles may be about 50 nm to about 500 nm, about 60 nm to about 400 nm, about 70 nm to about 450 nm, about 80 nm to about 400 nm, or about 90 nm to about 350 nm.

[0046] In the first aqueous dispersion above, the content of the fine abrasive particles may be about 0.5 wt% to about 20 wt%, about 1 wt% to about 15 wt%, about 1 wt% to about 15 wt%, or about 2 wt% to about 15 wt%.

[0047] Subsequently, the finely divided abrasive particles may be classified to produce a second aqueous dispersion containing the classified abrasive particles. The classified abrasive particles may be abrasive particles used for abrasion.

[0048] As shown in FIG. 2, a classification device (200) may be used to classify the finely divided abrasive particles.

[0049] The above classification device (200) may include a housing (210), a centrifugal separation unit (220), a driving unit (not shown), an injection unit (240), and a discharge unit (250).

[0050] The above housing can accommodate the centrifugal unit. The above housing can surround the centrifugal unit.

[0051] In addition, the housing may accommodate the first aqueous dispersion. In addition, the housing may be equipped with the injection part and the discharge part.

[0052] The above housing may have a cylindrical shape. The above housing may have a cylindrical shape extending in the direction of the rotation axis of the centrifugal separator.

[0053] The diameter (D1) of the housing may be approximately 1 m to approximately 3 m. In addition, the height (H1) of the housing may be approximately 0.5 m to approximately 3 m.

[0054] The centrifugal unit is disposed within the housing. The centrifugal unit may have a cylindrical shape. The centrifugal unit may have a cylindrical shape with a portion open.

[0055] The above centrifugal separation part (220) may include an outer wall part (221), a catch part (222), and a bottom part (223).

[0056] The outer wall portion may surround the outer circumference of the centrifugal separator. When the centrifugal separator rotates, the outer wall portion may accommodate large particles or aggregated abrasive particles (201) among the fine abrasive particles.

[0057] The outer wall may have a cylindrical shape with both ends open. The inner diameter (D2) of the outer wall may be approximately 0.5 m to approximately 1.5 m. Additionally, the height (H2) of the outer wall may be approximately 0.5 m to approximately 1.5 m.

[0058] The above-mentioned catch may be positioned at one end of the above-mentioned outer wall. The above-mentioned catch may have a disc shape with an open central portion. The above-mentioned catch may have a donut shape extending along one end of the above-mentioned outer wall.

[0059] The width (W) of the above-mentioned catch portion may be about 3 cm to about 10 cm, about 3 cm to about 9 cm, or 4 cm to about 7 cm.

[0060] The bottom portion may be positioned at the other end of the outer wall portion. The bottom portion may have a disc shape. The bottom portion may block the other end of the outer wall portion.

[0061] The above driving unit may be disposed on the outside of the housing. The above driving unit may be dynamically connected to the centrifugal separator.

[0062] The above driving unit can drive the above centrifugal separator. The above driving unit can rotate the above centrifugal separator around a rotation axis. The above driving unit can rotate the above centrifugal separator at a speed of about 1000 rpm to about 5000 rpm, a speed of about 1500 rpm to about 4500 rpm, or a speed of about 2000 rpm to about 4000 rpm.

[0063] The injection unit may inject the first aqueous dispersion into the centrifugal unit. The injection unit may extend from the outside of the housing into the centrifugal unit. The injection unit may include a nozzle that passes from the outside of the housing through the open area of ​​the catch.

[0064] Through the injection port, the first aqueous dispersion can be injected into the centrifugal unit at a rate of about 2 L / min to about 20 L / min, about 3 L / min to about 15 L / min, or about 4 L / min to about 10 L / min.

[0065] The discharge portion can discharge a second aqueous dispersion formed by classifying the first aqueous dispersion to the outside of the housing. The discharge portion may be formed at a location adjacent to the outer side of the outer wall and the bottom portion.

[0066] By the above classification device, finely classified abrasive particles included in the first aqueous dispersion are classified, and a second aqueous dispersion containing the classified abrasive particles (202) can be formed.

[0067] More specifically, water is filled inside the housing and the centrifugal unit. Subsequently, the centrifugal unit can be rotated by the driving unit. At the same time, the first aqueous dispersion can be injected into the centrifugal unit through the injection unit.

[0068] Accordingly, the injected first aqueous dispersion can be rotated by the rotation of the centrifugal separation unit. As the first aqueous dispersion rotates, centrifugal force can be applied to the first aqueous dispersion.

[0069] Accordingly, large particles and aggregated abrasive particles contained in the first aqueous dispersion can be filtered out by the outer wall and the catch.

[0070] In addition, the first aqueous dispersion may be continuously injected through the injection part, and the internal pressure of the centrifugal separator may be increased. Accordingly, due to the increase in pressure, classified abrasive particles having an appropriate particle size and water may be ejected to the outside through the open area of ​​the catch part.

[0071] In addition, due to the increase in pressure, the abrasive particles classified by the centrifugal separator and water can be discharged through the discharge section. Accordingly, a second aqueous dispersion containing the classified abrasive particles can be obtained through the discharge section. That is, the classified abrasive particles may be abrasive particles used in the abrasive slurry composition according to the example.

[0072] The second aqueous dispersion may contain the classified abrasive particles in an amount of about 1 wt% to about 20 wt%, about 2 wt% to about 15 wt%, or about 3 wt% to about 12 wt%.

[0073] The particle size distribution of the classified abrasive particles can be determined by the injection speed of the first aqueous dispersion, the rotation speed of the centrifugal separator, and the width of the catch.

[0074] Subsequently, the classified abrasive particles can be mixed with each other according to their particle size distribution. Accordingly, the abrasive particle dispersion can be prepared. For example, the particle size distribution of the classified abrasive particles can be measured. Subsequently, the classified abrasive particles can be appropriately mixed so that the abrasive particle dispersion has an appropriate particle size distribution.

[0075] For example, a first classified abrasive particle dispersion having a desired average particle size and a second classified abrasive particle dispersion having a particle size of less than about 30 nm can be mixed to produce the abrasive particle dispersion.

[0076] In addition, the classified abrasive particles may be used alone. When classified abrasive particles having a desired particle size distribution are obtained by appropriate classification in the classification process, the abrasive particle dispersion may be prepared.

[0077] The particle size distribution of the above-classified abrasive particles can be measured by a scanning electron microscope or a transmission electron microscope as follows. Subsequently, the above-classified abrasive particles may be used alone or mixed to prepare the above-classified abrasive particle dispersion.

[0078] In addition, even if the above abrasive particle dispersion is obtained by the same process, after the following particle size distribution is derived for each product, an abrasive particle dispersion having an appropriate particle size distribution can be selected.

[0079] For example, the unmeasured abrasive particle dispersion can be separated by container through the above process. Subsequently, a sample of the unmeasured abrasive particle dispersion is extracted from each container, and the particle size distribution can be measured in each sample. Afterward, a product containing the abrasive particle dispersion having a desired particle size distribution can be selected.

[0080] The particle size distribution of the above abrasive particle dispersion may be as follows, and the particle size of the above abrasive particles may be measured by the following method. In addition, the particle size distribution of the above abrasive particle dispersion may be derived from the particle size of each abrasive particle.

[0081] The particle size of the abrasive particles can be measured by an image captured by a scanning electron microscope (SEM) or a transmission electron microscope (TEM). More specifically, the particle size of the abrasive particles can be measured by a 2D image of the abrasive particles obtained by the scanning electron microscope. The 2D image of the abrasive particles can be analyzed by image analysis software. Examples of such image analysis software include the iSolution series from IMT (Image & Microscope Technology). More specifically, the area of ​​the 2D image of the abrasive particles can be derived by the image analysis software. Additionally, the particle size of a circle having the same area as the 2D image of the abrasive particles can be derived as the particle size of the abrasive particles.

[0082] The above abrasive particles may include a first abrasive particle, a second abrasive particle, a third abrasive particle, a fourth abrasive particle, a fifth abrasive particle, a sixth abrasive particle, a seventh abrasive particle, an eighth abrasive particle, a ninth abrasive particle, and a tenth abrasive particle.

[0083] The first abrasive particle mentioned above may have a particle size of less than about 10 nm.

[0084] The ratio of the number of the first abrasive particles may be less than about 5%, less than about 4%, less than about 3%, less than about 2%, less than about 1%, or less than about 0.5% relative to the total number of particles.

[0085] The second abrasive particle may have a particle size of about 10 nm to about 15 nm.

[0086] The ratio of the number of the second abrasive particles may be about 2% to about 10%, about 1% to about 5%, about 20% to about 35%, about 0.5% to about 1%, about 0.2% to about 0.5%, about 1% to about 5%, or about 25% to about 35% relative to the total number of particles.

[0087] The above third abrasive particles may have a particle size of about 15 nm to about 20 nm.

[0088] The ratio of the number of the third abrasive particles may be about 2% to about 10%, about 1% to about 8%, about 20% to about 35%, about 4% to about 9%, about 3% to about 10%, about 4% to about 8%, or about 25% to about 35% relative to the total number of particles.

[0089] The above-mentioned fourth abrasive particles may have a particle size of about 20 nm to about 25 nm.

[0090] The ratio of the number of the fourth abrasive particles may be about 10% to about 25%, about 1% to about 8%, about 10% to about 20%, about 15% to about 25%, about 1% to about 5%, about 4% to about 10%, or about 3% to about 20% relative to the total number of particles.

[0091] The above fifth abrasive particle may have a particle size of about 25 nm to about 30 nm.

[0092] The ratio of the number of the fifth abrasive particles may be about 10% to about 30%, about 5% to about 14%, about 10% to about 20%, about 5% to about 15%, about 15% to about 25%, about 22% to about 30%, or about 5% to about 35% relative to the total number of particles.

[0093] The ratio of the number of abrasive particles (second to fifth abrasive particles) having a particle size of about 10 nm to about 30 nm may exceed about 10% of the total number of particles.

[0094] The ratio of the sum of the number of the second to fifth abrasive particles may be about 10% to about 90%, about 20% to about 90%, about 30% to about 70%, about 80% to about 95%, about 20% to about 30%, about 10% to about 25%, about 30% to about 50%, about 45% to about 65%, about 18% to about 30%, about 10% to about 50%, or about 50% to about 90% relative to the total number of particles.

[0095] Since the polishing particles contain the first to fifth polishing particles in the same ratio as above, the polishing slurry composition according to the example can have an improved polishing rate while suppressing defects in the polishing process of a semiconductor substrate.

[0096] The above-mentioned sixth abrasive particles may have a particle size of about 30 nm to about 35 nm.

[0097] The ratio of the number of the 6th abrasive particles may be about 20% to about 40%, about 25% to about 35%, about 3% to about 10%, about 5% to about 15%, about 25% to about 32%, about 22% to about 30%, or about 3% to about 35% relative to the total number of particles.

[0098] The above seventh abrasive particle may have a particle size of about 35 nm to about 40 nm.

[0099] The ratio of the number of the 7th abrasive particles may be about 20% to about 40%, about 25% to about 40%, about 1% to about 3%, about 10% to about 20%, about 15% to about 25%, about 25% to about 35%, about 20% to about 30%, or about 10% to about 35% relative to the total number of particles.

[0100] The above eighth abrasive particle may have a particle size of about 40 nm to about 45 nm.

[0101] The ratio of the number of the eighth abrasive particles may be about 5% to about 15%, about 7% to about 17%, about 10% to about 20%, about 7% to about 13%, about 2% to about 8%, about 20% to about 30%, about 1% to about 3%, or about 5% to about 20% relative to the total number of particles.

[0102] The ratio of the sum of the number of the 6th to 8th abrasive particles above may be about 10% to about 85%, about 20% to about 85%, about 30% to about 85%, about 40% to about 85%, about 50% to about 85%, about 55% to about 85%, about 60% to about 85%, about 35% to about 50%, about 50% to about 65%, about 65% to about 80%, or about 70% to about 80% relative to the total number of particles.

[0103] Since the polishing particles contain the 6th to 8th polishing particles in the same ratio as above, the polishing slurry composition according to the example can have an improved polishing rate in the polishing process of a semiconductor substrate.

[0104] The above ninth abrasive particle may have a particle size of about 45 nm to about 50 nm.

[0105] The ratio of the number of the ninth abrasive particles may be about 1% to about 6%, about 0.1% to about 1%, about 1% to about 3%, about 0.5% to about 3%, about 2% to about 8%, about 10% to about 20%, about 1% to about 3%, or about 0.5% to about 4% relative to the total number of particles.

[0106] The above 10th abrasive particles may have a particle size of about 50 nm to about 75 nm.

[0107] The ratio of the number of the 10th abrasive particles above may be less than about 3%, less than about 2%, less than about 1%, less than about 0.5%, less than about 0.1%, or less than about 0.05% relative to the total number of particles.

[0108] Since the polishing particles contain the 9th and 10th polishing particles in the same ratio as above, the polishing slurry composition according to the example can suppress defects while having an improved polishing rate in the polishing process of a semiconductor substrate.

[0109] In addition, in a polishing slurry composition according to one embodiment, the number ratio of the first polishing particles is about 3% to about 7%, the number ratio of the second polishing particles is about 25% to about 35%, the number ratio of the third polishing particles is about 25% to about 35%, the number ratio of the fourth polishing particles is about 10% to about 20%, the number ratio of the fifth polishing particles is about 6% to about 14%, the number ratio of the sixth polishing particles is about 3% to about 7%, the number ratio of the seventh polishing particles is about 1% to about 2%, and the number ratio of the eighth to tenth polishing particles is about 0.0001% to about 1%. Here, the number ratio of the second polishing particles or the third polishing particles may be the largest.

[0110] In addition, in a polishing slurry composition according to one embodiment, the number ratio of the first polishing particles is less than about 1%, the number ratio of the second polishing particles is about 0.001% to about 1%, the number ratio of the third polishing particles is about 0.5% to about 5%, the number ratio of the fourth polishing particles is about 3% to about 8%, the number ratio of the fifth polishing particles is about 10% to about 20%, the number ratio of the sixth polishing particles is about 23% to about 31%, the number ratio of the seventh polishing particles is about 27% to about 35%, the number ratio of the eighth polishing particles is about 10% to about 16%, the number ratio of the ninth polishing particles is about 1% to about 7%, and the number ratio of the tenth polishing particles is less than about 1%. Here, the number ratio of the sixth polishing particles or the seventh polishing particles may be the largest.

[0111] In addition, in a polishing slurry composition according to one embodiment, the number ratio of the first polishing particles is less than about 1%, the number ratio of the second polishing particles is about 0.001% to about 1%, the number ratio of the third polishing particles is about 0.5% to about 5%, the number ratio of the fourth polishing particles is about 1% to about 7%, the number ratio of the fifth polishing particles is about 6% to about 16%, the number ratio of the sixth polishing particles is about 25% to about 35%, the number ratio of the seventh polishing particles is about 27% to about 36%, the number ratio of the eighth polishing particles is about 10% to about 18%, the number ratio of the ninth polishing particles is about 1% to about 7%, and the number ratio of the tenth polishing particles may be less than about 1%. Here, the number ratio of the sixth polishing particles or the seventh polishing particles may be the largest.

[0112] In addition, in a polishing slurry composition according to one embodiment, the number ratio of the first polishing particles is less than about 1%, the number ratio of the second polishing particles is about 0% to about 1%, the number ratio of the third polishing particles is about 0.5% to about 5%, the number ratio of the fourth polishing particles is about 1% to about 7%, the number ratio of the fifth polishing particles is about 6% to about 16%, the number ratio of the sixth polishing particles is about 25% to about 35%, the number ratio of the seventh polishing particles is about 27% to about 36%, the number ratio of the eighth polishing particles is about 10% to about 18%, the number ratio of the ninth polishing particles is about 1% to about 7%, and the number ratio of the tenth polishing particles may be less than about 1%. Here, the number ratio of the sixth polishing particles may be the largest.

[0113] In addition, in a polishing slurry composition according to one embodiment, the number ratio of the first polishing particles is less than about 1%, the number ratio of the second polishing particles is about 0.001% to about 3%, the number ratio of the third polishing particles is about 1% to about 8%, the number ratio of the fourth polishing particles is about 7% to about 17%, the number ratio of the fifth polishing particles is about 12% to about 23%, the number ratio of the sixth polishing particles is about 20% to about 32%, the number ratio of the seventh polishing particles is about 15% to about 25%, the number ratio of the eighth polishing particles is about 5% to about 15%, the number ratio of the ninth polishing particles is about 0.5% to about 5%, and the number ratio of the tenth polishing particles may be less than about 1%. Here, the number ratio of the fifth polishing particles or the sixth polishing particles may be the largest.

[0114] In addition, in a polishing slurry composition according to one embodiment, the number ratio of the first polishing particles is less than about 1%, the number ratio of the second polishing particles is about 0.001% to about 5%, the number ratio of the third polishing particles is about 3% to about 9%, the number ratio of the fourth polishing particles is about 13% to about 23%, the number ratio of the fifth polishing particles is about 20% to about 33%, the number ratio of the sixth polishing particles is about 18% to about 30%, the number ratio of the seventh polishing particles is about 10% to about 20%, the number ratio of the eighth polishing particles is about 2% to about 7%, the number ratio of the ninth polishing particles is about 0.5% to about 3%, and the number ratio of the tenth polishing particles is less than about 1%. Here, the number ratio of the sixth polishing particles or the seventh polishing particles may be the largest.

[0115] Since the above-mentioned abrasive particles have a particle size distribution as described above, an improved abrasive rate and low defects can be achieved.

[0116] The above-described classified abrasive particles are appropriately mixed so that the abrasive particles may have a particle size distribution as described above.

[0117] The polishing slurry composition according to the embodiment may include at least one additive together with the silica particles. The additive may perform a role in enabling the polishing slurry composition to achieve a technical purpose primarily through chemical action. Specifically, the additive may chemically react with the constituent components of the film to be polished to cause the film to be polished to exhibit a surface state optimized for polishing.

[0118] In one embodiment, the at least one additive may include an organic acid. The role of the organic acid is not particularly limited, but, for example, it may function as a complexing agent to control polishing properties for copper films or to trap metal ions. Additionally, the organic acid may play a role in controlling the hydrogen ion concentration (pH) of the polishing slurry composition. The above organic acids are, for example, acetic acid (CH3COOH), formic acid, benzoic acid, nicotinic acid, picolinic acid, alanine, phenylalanine, valine, leucine, isoleucine, arginine, aspartic acid, citric acid, adipic acid, succinic acid, oxalic acid, malonic acid, glycine, glutamic acid, glutaric acid, phthalic acid, histidine, lysine, glutamine, pyrrolysine, It may include one selected from the group consisting of selenocysteine, threonine, serine, cysteine, methionine, asparagine, tyrosine, diiodotyrosine, tryptophan, proline, oxyproline, ethylenediaminetetraacetic acid (EDTA), nitrotriacetic acid (NTA), iminodiaacetic acid (IDA) and combinations thereof.

[0119] In one embodiment, the content of the organic acid may be about 0.10 parts by weight or more, for example, about 0.20 parts by weight or more, for example, about 0.30 parts by weight or more, for example, about 0.40 parts by weight or more, for example, about 0.50 parts by weight or more, for example, about 0.60 parts by weight or more, for example, about 0.70 parts by weight or more, for example, about 0.80 parts by weight or more, for example, about 5.00 parts by weight or less, for example, about 4.00 parts by weight or less, for example, about 3.00 parts by weight or less, for example, about 2.50 parts by weight or less, for example, about 2.00 parts by weight or less, for example, about 1.50 parts by weight or less, for example, about 1.00 parts by weight or less, based on 100 parts by weight of the silica particles.

[0120] The above at least one additive may include an azole-based compound. The role of the azole-based compound is not particularly limited, but, for example, it may play a role in controlling the surface properties of the copper film. The above azole compounds are, for example, benzotriazole (BTA), 5-methyl-1H-benzotriazole (5-MBTA), 3-amino-1,2,4-triazole (3-Amino-1,2,4-Triazole), 5-phenyl-1H-tetrazole (5-Phenyl-1H-Tetrazole), 3-amino-5-methyl-4H-1,2,4-triazole (3-Amino-5-Methyl-4H-1,2,4-Triazole), 5-aminotetrazole (ATZ), 1,2,4-triazole, 1,2,3-triazole, tetrazole, pentazole, It may include one selected from the group consisting of tolitriazole, imidazole, pyrozole, and combinations thereof.

[0121] In one embodiment, the content of the azole compound may be about 0.10 parts by weight or more, for example, about 0.20 parts by weight or more, for example, about 0.30 parts by weight or more, for example, about 0.40 parts by weight or more, for example, about 0.50 parts by weight or more, for example, about 0.60 parts by weight or more, for example, about 5.00 parts by weight or less, for example, about 4.00 parts by weight or less, for example, about 3.00 parts by weight or less, for example, about 2.50 parts by weight or less, for example, about 2.00 parts by weight or less, for example, about 1.50 parts by weight or less, for example, about 1.00 parts by weight or less, based on 100 parts by weight of the silica particles.

[0122] The above at least one additive may include a sugar alcohol-based compound. The above sugar alcohol may include, for example, one selected from the group consisting of ethylene glycol, glycerol, erythritol, threiol, arabitol, xylitol, ribitol, mannitol, sorbitol, galactitol, fucitol, iditol, inositol, volemitol, isomalt, maltitol, lactitol, maltotriitol, maltotetraitol, polyglycitol, and combinations thereof.

[0123] In one embodiment, the content of the sugar alcohol-based compound is about 0.10 parts by weight or more, for example, about 0.20 parts by weight or more, for example, about 0.30 parts by weight or more, for example, about 0.40 parts by weight or more, for example, about 0.50 parts by weight or more, for example, about 0.60 parts by weight or more, for example, about 0.70 parts by weight or more, for example, about 0.80 parts by weight or more, for example, about 0.90 parts by weight or more, for example, about 1.00 parts by weight or more, for example, about 1.10 parts by weight or more, for example, about 1.20 parts by weight or more, for example, about 5.00 parts by weight or less, for example, about 4.00 parts by weight or less, for example, about 3.00 parts by weight or less, for example, about 2.50 parts by weight or less, for example, about 2.00 parts by weight or less, for example, It may be about 1.50 parts by weight or less.

[0124] The above at least one additive may include a hydrogen ion concentration (pH) regulator. The pH regulator may include, for example, one selected from the group consisting of nitric acid, hydrochloric acid, acetic acid, sulfuric acid, potassium hydroxide, sodium hydroxide, ammonia, and combinations thereof.

[0125] In one embodiment, the content of the pH adjuster is about 0.01 parts by weight or more, for example, about 0.02 parts by weight or more, for example, about 0.03 parts by weight or more, for example, about 0.04 parts by weight or more, for example, about 0.05 parts by weight or more, for example, about 0.06 parts by weight or more, for example, about 0.07 parts by weight or more, for example, about 0.08 parts by weight or more, for example, about 0.09 parts by weight or more, for example, about 0.10 parts by weight or more, for example, about 0.20 parts by weight or more, for example, about 0.30 parts by weight or more, for example, about 0.40 parts by weight or more, for example, about 0.50 parts by weight or more, for example, about 0.60 parts by weight or more, for example, about 0.70 parts by weight or more, for example, about 0.80 parts by weight or more, for example, about It may be 5.00 parts by weight or less, for example, about 4.00 parts by weight or less, for example, about 3.00 parts by weight or less, for example, about 2.50 parts by weight or less, for example, about 2.00 parts by weight or less, for example, about 1.50 parts by weight or less.

[0126] The above semiconductor polishing composition may have a solid content of about 3.0 wt% to about 20 wt%, for example, about 3.0 wt% to about 18 wt%, for example, about 3.0 wt% to about 16 wt%, for example, about 3.0 wt% to about 14 wt%, for example, about 3.0 wt% to about 12 wt%, for example, about 3.0 wt% to about 10 wt%. If the solid content is excessively low, there is a concern that the polishing rate for each film of the polishing target may not be sufficiently secured, and if the solid content is excessively high, there is a concern that defects such as scratches may occur during the polishing process due to unnecessary aggregation. The polishing slurry composition comprises the polishing particles, the at least one additive, and the solvent, and satisfies the solid content of the above range, which may be more advantageous for injecting at a uniform flow rate when applied to a polishing process, and may be more advantageous in terms of ensuring uniform dispersibility and storage stability during the distribution and storage of the polishing slurry composition.

[0127] The above polishing slurry composition may have a hydrogen ion concentration (pH) of about 2.0 to about 6.0, for example, about 2.0 to about 5.0, for example, about 3.0 to about 6.0. By satisfying such a hydrogen ion concentration range, the technical effect of the silica particles can be maximized.

[0128] The polishing slurry composition according to the example may further include a polishing aid. The polishing aid may be selected from at least one of the group consisting of sodium chloride, potassium chloride, anhydrous potassium carbonate, sodium sulfate, potassium sulfate, lithium sulfate, sodium pyrophosphate, phosphoric acid, calcium chloride, calcium bromide, magnesium sulfate, barium chloride, barium bromide, magnesium chloride, magnesium bromide, or strontium chloride. The polishing aid may be phosphoric acid. The polishing aid can improve the polishing rate of the silicon nitride film.

[0129] The above-mentioned polishing aid may be included in the polishing slurry composition according to the example in an amount of about 0.01 wt% to about 0.1 wt%, about 0.01 wt% to about 0.2 wt%, about 0.01 wt% to about 0.15 wt%, or about 0.01 wt% to about 0.08 wt% based on the total weight of the composition.

[0130] Since the above-mentioned polishing aid has the above-mentioned characteristics, the polishing slurry composition according to the example can have an improved polishing rate on silicon nitride films, etc.

[0131] In addition, the polishing slurry composition according to the example may include hydrogen peroxide. The hydrogen peroxide may perform the function of an oxidizing agent.

[0132] FIG. 3 schematically illustrates the apparatus configuration for a method of manufacturing the semiconductor device according to one embodiment. Referring to FIG. 3, the method of manufacturing the semiconductor device comprises the steps of: arranging the surface to be polished (130) to come into contact with the polishing surface (111) of a polishing pad (110); and injecting a polishing slurry composition (150) onto the polishing surface (111).

[0133] The polishing target (130) may include a semiconductor wafer having a silicon nitride film and a silicon oxide film. Specifically, the surface to be polished may include a surface requiring simultaneous polishing of the silicon nitride film and the silicon oxide film. As the polishing target (130) and the surface to be polished have these characteristics, the polishing slurry composition

[0134] The polishing pad (110) may have a Shore D hardness of about 50 to about 70, for example, about 50 to about 65, for example, about 55 to about 65, measured on the polishing surface (111). A method for measuring the Shore D surface hardness on the polishing surface may be widely applied using methods commonly used in the relevant technical field, but, for example, a sample of the polishing pad cut to a size of 2 cm × 2 cm (thickness: 2 mm) may be prepared, left to stand for 16 hours in an environment with a temperature of 25°C and a humidity of 50 ± 5%, and then measured using a hardness tester (D-type hardness tester). By satisfying the hardness of the polishing surface (111) in this range, the semiconductor process composition (150) can flow at the contact interface between the polishing surface (111) and the surface to be polished of the polishing target (130), thereby exhibiting a physically appropriate elastic correlation with the polishing pad (110). As a result, the semiconductor device manufactured by the method for manufacturing the semiconductor device may be more advantageous in exhibiting high polishing flatness without defects such as scratches.

[0135] The polishing pad (110) may include a groove or a groove on the polishing surface (111). The groove or groove is configured to control the fluidity of the semiconductor process composition (150) injected onto the polishing surface (111). Its shape is not particularly limited, but its depth may be, for example, about 300 µm to about 900 µm, for example, about 300 µm to about 850 µm, for example, about 400 µm to about 850 µm, for example, about 450 µm to about 850 µm, for example, about 500 µm to about 800 µm, for example, about 550 µm to about 800 µm, for example, about 600 µm to about 800 µm. In addition, the width of the groove or grooves may be about 100 µm to about 600 µm, for example, about 200 µm to about 600 µm, for example, about 200 µm to about 550 µm, for example, about 300 µm to about 550 µm, for example, about 350 µm to about 550 µm. When the depth and width of the groove or grooves satisfy such ranges, it may be more advantageous to impart optimized fluidity to the semiconductor process composition.

[0136] The fact that the surface to be polished of the object to be polished (130) comes into contact with the polishing surface (111) of the polishing pad (110) can be interpreted to include not only cases where there is direct physical contact between them, but also cases where there is indirect contact between them through the semiconductor process composition.

[0137] The step of injecting the semiconductor process composition (150) onto the polished surface (111) can be performed specifically by injecting the semiconductor process composition (150) onto the polished surface (111) through a supply nozzle (140). In one embodiment, the flow rate of the semiconductor process composition (150) injected through the supply nozzle (140) can be about 10 ml / min to about 1,000 ml / min, for example, about 10 ml / min to about 800 ml / min, for example, about 50 ml / min to about 500 ml / min, for example, about 80 ml / min to about 400 ml / min, for example, about 100 ml / min to about 300 ml / min, for example, about 150 ml / min to about 300 ml / min. When the semiconductor process composition (150) satisfying the above Equation 1, Equation 2, and / or Equation 3, respectively, within the aforementioned ranges is injected onto the polishing surface (111) at a flow rate within such ranges, the frictional behavior between the polishing surface (111) and the surface to be polished through this may be more advantageous for improving the polishing performance of the surface to be polished. More specifically, it may be more advantageous for achieving the desired polishing selectivity and simultaneously realizing the effect of preventing defects such as scratches caused by the solid components in the semiconductor process composition.

[0138] The method for manufacturing the semiconductor device described above includes the step of polishing the surface to be polished while rotating the polishing pad (110) and the polishing target (130) relative to each other. Referring to FIG. 3, the polishing pad (110) may be mounted on a platen (120) such that the polishing surface (111) is the uppermost surface, and the polishing target (130) may be received in a carrier (160) such that the surface to be polished is the lowermost surface. The polishing pad (110) and the polishing target (130) may each rotate at the same speed and trajectory as the platen (120) and the carrier (160) rotate. Relative rotation of the polishing pad (110) and the polishing target (130) means rotating them while positioned so that the polishing surface and the surface to be polished are in contact with each other. The rotation direction of the polishing pad (110) and the rotation direction of the polishing target (130) may be opposite directions to each other, or they may be the same direction.

[0139] In one embodiment, the rotational speed of the polishing pad (110) and the polishing target (130) may each be independently about 10 rpm to about 500 rpm, and for example, about 30 rpm to about 200 rpm. When the polishing pad (110) and the polishing target (130) each rotate at a rotational speed within the above range, the frictional behavior of the polishing surface (111) and the surface to be polished due to the centrifugal force is coupled with the semiconductor process composition (150) injected onto the polishing surface (111), so that the surface to be polished may be polished to have a high polishing flatness and may be more advantageous for polishing without defects.

[0140] In one embodiment, the rotational speed of the polishing target (130) may be greater than the rotational speed of the polishing pad (110). By rotating the polishing target (130) at a higher speed than the polishing pad (110), polishing stability is ensured, and at the same time, it may be more advantageous for the polishing surface of the polishing target (130) to be polished without defects.

[0141] In one embodiment, the method for manufacturing the semiconductor device may rotate the polishing pad (110) and the polishing target (130) relative to each other under conditions where the surface to be polished is pressed against the polishing surface (111). The load applied to the surface to be polished against the polishing surface (111) may be, for example, about 0.01 psi to about 20 psi, and for example, about 0.1 psi to about 15 psi.

[0142] The method for manufacturing the semiconductor device described above may further include a step of processing the polished surface (111) through a conditioner (170). The polished surface (111) of the polishing pad (110) is chemically affected as the semiconductor process composition (150) is continuously supplied, and at the same time, is physically affected due to physical contact with the surface to be polished of the polishing target (130). If the condition of the polished surface (111) is deformed due to these chemical / physical effects, it may be difficult to maintain uniform polishing performance for the surface to be polished. The conditioner (170) serves as a means for processing the polished surface (111) during the polishing process and can contribute to maintaining the polished surface (111) in a uniformly suitable state for polishing throughout the entire polishing process.

[0143] For example, the conditioner (170) can perform the function of roughening the polished surface (111) while rotating at a predetermined speed. The rotational speed of the conditioner (170) may be, for example, about 10 rpm to about 500 rpm, for example, about 50 rpm to about 500 rpm, for example, about 100 rpm to about 500 rpm, for example, about 200 rpm to about 500 rpm, for example, more than about 200 rpm and less than about 400 rpm.

[0144] The conditioner (170) may rotate while being pressed with a predetermined pressure against the polishing surface (111) of the polishing pad (110). For example, the pressure applied by the conditioner (170) against the polishing surface (111) may be about 1 psi to about 20 psi, for example, about 1 psi to about 15 psi, for example, about 5 psi to about 15 psi, for example, about 5 psi to about 10 psi.

[0145] By surface treatment under the aforementioned process conditions through the conditioner (170), the polished surface (111) can maintain an optimal surface condition throughout the entire polishing process, and the effect of extending the polishing life under the application conditions of the semiconductor process composition (150) can be obtained.

[0146] The polishing slurry composition according to the example may include polishing particles having a particle size of 10 nm to 30 nm in an appropriate proportion. That is, the polishing slurry composition according to the example may include polishing particles having a fine particle size in a high proportion.

[0147] Accordingly, the polishing slurry composition according to the embodiment can precisely polish the semiconductor substrate using the fine polishing particles. Accordingly, the polishing slurry composition according to the embodiment can suppress defects that may occur during the polishing process on the semiconductor substrate.

[0148] In addition, the polishing slurry composition according to the example may appropriately include polishing particles having a large particle size. Accordingly, the polishing slurry composition according to the example may have an improved polishing speed.

[0149] The polishing slurry composition according to the example contains abrasive particles having a fine particle size and abrasive particles having a large particle size in appropriate amounts, so it can have an improved polishing speed while having low defects.

[0150] Specific embodiments of the present invention are presented below. However, the embodiments described below are merely for the purpose of specifically illustrating or explaining the present invention, and the scope of the present invention is not to be interpreted as limited by this, and the scope of the present invention is determined by the claims.

[0151]

[0152] Preparation Example

[0153] Colloidal silica (average particle size 45 nm, Nouryon product, silica particle content 26 wt%)

[0154] Abrasive aid: Phosphoric acid

[0155] pH buffer: Acetic acid

[0156] Biocide: Benzoisothiazolinone (Benzisothiazolinone, BIT, BNOCHEM, BNOBIT product)

[0157] Corrosion Inhibitor: 5-aminotetrazole

[0158] pH Adjuster: Potassium Hydroxide

[0159]

[0160] Silica particle aqueous dispersion #1 to #6

[0161] The above-mentioned colloidal silica, that is, 20 identical products, were prepared. The abrasive particle diameters of the 20 colloidal silica products were analyzed by the following method, and 6 products were selected. Colloidal silica was extracted from the 20 colloidal silica products and diluted to a concentration of approximately 0.1 wt% to prepare a sample. The sample was photographed using a scanning electron microscope (JEOL JEM-3010 TEM), and a square image of approximately 1 µm × 1 µm was obtained. Subsequently, the particle diameter of each particle was derived from the image using image analysis software (IMT i-Solution). At this time, in the image analysis software, the pixel unit was 2.990 for X and Y, and the aspect ratio was approximately 1:1. The above process was repeated approximately 3 times to derive the particle diameter distribution of the 20 products. Subsequently, colloidal silica products having appropriate particle size distributions were determined to be silica particle dispersions #1 to #6 having particle size distributions as shown in Table 1 below.

[0162] Particle Size (nm) 10~15 15~20 20~25 25~30 30~35 35~40 40~45 45~50 50~75 Silica Particle Dispersion #1 3 1.27% 30.85% 15.98% 9.64% 4.55% 1.65% 0.69% 0.14% 0.28% Silica Particle Dispersion #1 0.51% 2.05% 6.15% 15.90% 27.69% 32.31% 12.82% 2.05% 0.51% Silica Particle Dispersion #1 0.00% 2.14% 3.57% 11.43% 29.29% 31.43% 15.71% 5.71% 0.71% Silica Particle Dispersion #12.03%6.69%13.95%18.60%26.45%20.06%10.47%1.74%0.00% Silica particle dispersion #13.17%6.35%18.59%26.08%24.94%14.29%4.54%1.13%0.23% Silica particle dispersion #10.38%3.79%6.82%12.50%11.74%23.11%24.24%14.77%2.65%

[0163] <Examples> Example 1

[0164] About 50 parts by weight of silica particle dispersion #1, about 0.015 parts by weight of phosphoric acid, about 0.033 parts by weight of acetic acid, about 0.01 parts by weight of benzisothiazolinone, about 0.06 parts by weight of 5-aminotetrazole, and about 50 parts by weight of deionized water were uniformly mixed, and potassium hydroxide was added to prepare a polishing slurry composition #1 with a pH of 4.1.

[0165] Examples 2 to 6

[0166] As shown in Table 2 below, silica particle dispersions #2 to #6 were used to prepare a polishing slurry composition.

[0167] Separated Silica Particle Dispersion Example 1 #1 Example 2 #2 Example 3 #3 Example 4 #4 Example 5 #5 Example 6 #6

[0168] <Evaluation>

[0169] Measurement Example 1: Measurement of Grinding Rate

[0170] A silicon oxide wafer with a thickness of approximately 20,000 Å was prepared. As shown in FIG. 3, the wafer was placed in a carrier (160) with the surface to be polished facing downwards as a polishing target (130). The carrier (160) was positioned so that the surface to be polished and the polishing surface (111) were in contact with a plate (120) on which a polishing pad (110, SK Enpulse HD-319B) was mounted so that its polishing surface (111) faced upwards. Then, each configuration was operated for 60 seconds with a pressure of 2 psi applied to the polishing surface of the carrier (160), a rotation speed of 93 rpm of the carrier (160), and a rotation speed of 87 rpm of the plate (120). Polishing was then performed while applying the polishing slurry compositions of each of the above example and the above comparative example to the polishing surface at a flow rate of 250 ml / min. At the same time, the conditioner (170, Saesol Diamond Co. SKC-CI45) was operated under conditions of a rotational speed of 250 rpm and a pressurized pressure of 8 psi to process the polished surface. The thickness of the wafer after polishing was measured, and a polishing rate value (Rox) in units of Å / min was calculated using the polishing time and the thickness of the wafer before and after polishing.

[0171] Measurement Example 2: Measurement of Zeta Potential and Abrasive Particle Size

[0172] For each of the above examples, the zeta potential and size of the ceria particles included in the polishing slurry compositions prepared in the examples and comparative examples were measured using a zeta potential meter (Malvern). In addition, the polishing slurry compositions prepared in the examples and comparative examples were left at a temperature of about 60°C for about 7 days, after which the zeta potential and size of the ceria particles were measured.

[0173] Measurement Example 3: Electrical Conductivity

[0174] The above electrical conductivity was measured using an electrical conductivity measuring device (Nano ZS, Malvern Instruments Ltd.).

[0175] As shown in Tables 3 and 4 below, the oxide film polishing rate, electrical conductivity, particle size, and zeta potential were measured in the polishing slurry compositions according to the examples.

[0176] Classification Oxide film polishing rate (Å / min) Example 1 3915 Example 2 3590 Example 3 3751 Example 4 3725 Example 5 3631 Example 6 3498

[0177] Classification pH Conductivity (uS / cm) Average Particle Size (nm) Zeta Potential (mV) Example 1 4.3 318 5.7 42.0 924 Example 2 4.2 3238 42.9 723.7 Example 3 4.2 5244 42.9 125.2 Example 4 4.3 4238 42.2 925.4 Example 5 4.3 720 242.1 325.9 Example 6 4.3 4229 42.4 126

[0178] As described in Tables 3 and 4, the polishing slurry composition according to the examples can have an improved polishing rate, selectivity, and low defects.

Claims

1. Water; Abrasive particles having an average particle size of 10 nm to 100 nm; and It includes a pH adjuster, A polishing slurry composition in which the ratio of the number of abrasive particles having a particle size of 10 nm to 30 nm exceeds 10% of the total number of particles.

2. A polishing slurry composition according to claim 1, wherein the ratio of the number of polishing particles having a particle size of 10 nm to 30 nm is 10% to 90%.

3. A polishing slurry composition according to claim 1, wherein the ratio of the number of polishing particles having a particle size of 10 nm to 30 nm is 20% to 90%.

4. A polishing slurry composition according to claim 1, wherein the ratio of the number of polishing particles having a particle size of 10 nm to 30 nm is 30% to 70%.

5. In claim 1, the abrasive particles comprise fifth abrasive particles having a particle size of 25 nm to 30 nm, and A polishing slurry composition in which the ratio of the number of the fifth polishing particles is 10% to 30% of the total number of particles.

6. In claim 1, the abrasive particles comprise a fourth abrasive particle having a particle size of 20 nm to 25 nm, and A polishing slurry composition in which the ratio of the number of the fourth polishing particles is 10% to 25% of the total number of particles.

7. In claim 1, the abrasive particles comprise third abrasive particles having a particle size of 15 nm to 20 nm, and A polishing slurry composition in which the ratio of the number of the third polishing particles is 2% to 10% of the total number of particles.

8. In claim 1, the abrasive particles comprise second abrasive particles having a particle size of 10 nm to 15 nm, and A polishing slurry composition in which the ratio of the number of the second polishing particles is 2% to 10% of the total number of particles.

9. In claim 1, the abrasive particles comprise sixth abrasive particles having a particle size of 30 nm to 35 nm, and A polishing slurry composition in which the ratio of the number of the sixth polishing particles is 20% to 40% of the total number of particles.

10. In claim 9, the abrasive particles comprise seventh abrasive particles having a particle size of 35 nm to 40 nm, and A polishing slurry composition in which the ratio of the number of the seventh polishing particles is 20% to 40% of the total number of particles.

11. In claim 10, the abrasive particles comprise an 8th abrasive particle having a particle size of 40 nm to 45 nm and a 9th abrasive particle having a particle size of 45 nm to 50 nm, and The ratio of the number of the eighth abrasive particles is 5% to 15% of the total number of particles, and A polishing slurry composition in which the sum of the number of the ninth polishing particles is 1% to 6% of the total number of particles.

12. A polishing slurry composition according to claim 11, wherein the ratio of the number of polishing particles having a particle size of 50 nm to 75 nm is less than 3% of the total number of particles.

13. A step of preparing a first aqueous dispersion containing finely divided abrasive particles; A step of classifying the above-mentioned finely divided abrasive particles to prepare a second aqueous dispersion containing the abrasive particles; and It includes a step of adjusting the pH of the second aqueous dispersion, and A method for preparing a polishing slurry composition in which the ratio of the number of polishing particles having a particle size of 10 nm to 30 nm exceeds 10% of the total number of particles.

14. Step of preparing the semiconductor substrate; A step of spraying a polishing slit composition onto the semiconductor substrate; and The method includes the step of polishing the semiconductor substrate, The above abrasive slurry composition is water; Abrasive particles having an average particle size of 10 nm to 100 nm; and It includes a pH adjuster, A method for manufacturing a semiconductor device in which, in the above polishing slurry composition, the ratio of the number of polishing particles having a particle size of 10 nm to 30 nm exceeds 10% of the total number of particles.

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