Adhesive composition, laminate, and method for producing processed compound semiconductor substrate

Abstract

This adhesive composition is used for forming an adhesive layer in a laminate which has a compound semiconductor substrate that is temporarily bonded thereto when the compound semiconductor substrate is processed and which includes the compound semiconductor substrate, a support substrate, and an adhesive layer provided between the compound semiconductor substrate and the support substrate. The adhesive composition contains a linear polyorganosiloxane having a C2-40 alkenyl group bonded to a silicon atom and a linear polyorganosiloxane having an Si-H group, and does not contain a polyorganosiloxane having a Q unit.

Description

Adhesive Composition, Laminate, and Method for Manufacturing Processed Compound Semiconductor Substrate

[0001] The present invention relates to an adhesive composition, a laminate, and a method for manufacturing a processed compound semiconductor substrate.

[0002] Compound semiconductor chips using compound semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are used in SiC power semiconductor devices, GaN HEMTs (High Electron Mobility Transistors), and the like.

[0003] As a method for manufacturing a power semiconductor device using a Si substrate, for example, a step of forming a gate electrode on one surface of a semiconductor substrate, polishing the semiconductor substrate from the other surface opposite to the one surface on which the gate electrode is formed to form a semiconductor substrate having a predetermined thickness, forming an alloy serving as a drain electrode containing impurities of the same conductivity type as the semiconductor substrate on the other surface of the semiconductor substrate, and diffusing the impurities contained in the alloy into the semiconductor substrate to form an impurity layer of the same conductivity type as the semiconductor substrate and having a higher concentration than the semiconductor substrate are provided. A method for manufacturing a power semiconductor device has been proposed (see Patent Document Reference).

[0004] On the other hand, the following adhesives have been proposed as temporary adhesives used for temporarily adhering a silicon semiconductor substrate and a support substrate when processing the silicon semiconductor substrate. It is an adhesive for joining the surface of the support and the circumferential surface of the wafer surface, can be temporarily adhered for processing the back surface of the wafer, and the peeling surface can be selected between the support and the adhesive or between the wafer and the adhesive by heat curing from the support side or the wafer side. An adhesive containing a component (A) that cures by a hydrosilylation reaction and a component (B) containing polydimethylsiloxane (see Claim 2 of Patent Document 2).

[0005] Japanese Unexamined Patent Application Publication No. 2000-252466 International Publication No. 2017 / 221772 Pamphlet

[0006] Because compound semiconductor substrates are harder than silicon substrates, heat is easily generated when mechanically processing them, such as polishing, cutting, and drilling. Furthermore, processing compound semiconductor substrates may be performed at higher temperatures compared to processing silicon semiconductor substrates.

[0007] The present invention aims to provide an adhesive composition that can temporarily bond a compound semiconductor substrate to a support substrate even when processing the compound semiconductor substrate at high temperatures, a laminate using the adhesive composition, and a method for manufacturing a processed compound semiconductor substrate using the laminate.

[0008] The inventors of the present invention conducted diligent studies to solve the aforementioned problems and, as a result, found that they could solve the aforementioned problems, and completed the present invention having the following gist.

[0009] In other words, the present invention encompasses the following: [1] An adhesive composition used for forming an adhesive layer in a laminate having a compound semiconductor substrate temporarily bonded to the compound semiconductor substrate during processing, the laminate comprising the compound semiconductor substrate, a support substrate, and an adhesive layer provided between the compound semiconductor substrate and the support substrate, the adhesive composition containing a linear polyorganosiloxane having alkenyl groups having 2 to 40 carbon atoms bonded to silicon atoms, and a linear polyorganosiloxane having Si-H groups, and not containing a polyorganosiloxane having Q units. [2] The adhesive composition according to [1], which does not contain a polyorganosiloxane as a release agent component. [3] An adhesive composition having a compound semiconductor substrate temporarily bonded to the compound semiconductor substrate during processing, comprising the compound semiconductor substrate, a support substrate, and an adhesive layer provided between the compound semiconductor substrate and the support substrate, wherein the adhesive layer is an adhesive layer formed from the adhesive composition according to [1] or [2]. [4] The laminate according to [3], further comprising a release agent layer provided between the compound semiconductor substrate and the support substrate. [5] The compound semiconductor in the compound semiconductor substrate is SiC, GaN, GaAs, Ga ２ O ３A laminate according to [3] or [4], comprising at least one of the following: and AlGaAs. [6] A method for manufacturing a processed compound semiconductor substrate, comprising: a processing step of processing the compound semiconductor substrate of the laminate according to any one of [3] to [5]; and a separation step of separating the processed compound semiconductor substrate from the support substrate. [7] A method for manufacturing a processed compound semiconductor substrate according to [6], further comprising a cleaning step of cleaning the processed compound semiconductor substrate after the separation step.

[0010] According to the present invention, it is possible to provide an adhesive composition that can temporarily bond a compound semiconductor substrate to a support substrate even when processing the compound semiconductor substrate at high temperatures, a laminate using the adhesive composition, and a method for manufacturing a processed compound semiconductor substrate using the laminate.

[0011] Figure 1 is a schematic cross-sectional view of an example of a laminate. Figure 2 is a schematic cross-sectional view of another example of a laminate. Figure 3A is a schematic cross-sectional view illustrating an example of a method for manufacturing a laminate (part 1). Figure 3B is a schematic cross-sectional view illustrating an example of a method for manufacturing a laminate (part 2). Figure 3C is a schematic cross-sectional view illustrating an example of a method for manufacturing a laminate (part 3). Figure 4A is a schematic cross-sectional view illustrating an example of a method for manufacturing a processed compound semiconductor substrate (part 1). Figure 4B is a schematic cross-sectional view illustrating an example of a method for manufacturing a processed compound semiconductor substrate (part 2). Figure 4C is a schematic cross-sectional view illustrating an example of a method for manufacturing a processed compound semiconductor substrate (part 3). Figure 4D is a schematic cross-sectional view illustrating an example of a method for manufacturing a processed compound semiconductor substrate (part 4). Figure 4E is a schematic cross-sectional view illustrating an example of a method for manufacturing a processed compound semiconductor substrate (part 5).

[0012] (Adhesive Composition) The adhesive composition of the present invention contains a linear polyorganosiloxane (a1) having alkenyl groups with 2 to 40 carbon atoms bonded to silicon atoms, and a linear polyorganosiloxane (a2) having Si-H groups. The adhesive composition of the present invention does not contain a polyorganosiloxane having Q units. The adhesive composition of the present invention is an adhesive composition used to form an adhesive layer in a laminate having a compound semiconductor substrate that has been temporarily bonded when processing a compound semiconductor substrate, and the laminate having a compound semiconductor substrate, a support substrate, and an adhesive layer provided between the compound semiconductor substrate and the support substrate.

[0013] The inventors investigated applying a conventional temporary adhesive, used for temporary bonding between a silicon semiconductor substrate and a support substrate, to temporary bonding between a compound semiconductor substrate and a support substrate. An example of a conventional temporary adhesive is the adhesive described in International Publication No. 2017 / 221772. In the examples in International Publication No. 2017 / 221772, a base polymer consisting of a vinyl group-containing linear polydimethylsiloxane with a viscosity of 200 mPa·s and a vinyl group-containing MQ resin is used as the polysiloxane (a1) (see paragraph

[0034] of International Publication No. 2017 / 221772). In investigating the temporary bonding between a compound semiconductor substrate and a support substrate, the inventors found that when a polyorganosiloxane having Q units (e.g., MQ resin) was included in the adhesive composition, gas was generated during high-temperature processing. The generation of gas may lead to unwanted delamination due to a decrease in temporary bonding strength, or to delamination failure during the delamination process. Therefore, the present inventors discovered that by not containing polyorganosiloxanes having Q units in the adhesive composition, gas generation during high-temperature processing can be suppressed, leading to the completion of the present invention.

[0014] Q unit is SiO ２ This is a siloxane unit represented by . A polyorganosiloxane having a Q unit may also have an M unit, a D unit, or a T unit. The M unit is R １ｘ R ２ｘ R ３ｘ SiO１／２ It is a siloxane unit represented by. The D unit is R ４ｘ R ５ｘ SiO ２／２ It is a siloxane unit represented by. The T unit is R ６ｘ SiO ３／２ It is a siloxane unit represented by. R １ｘ ~R ６ｘ ~R

[0015] <Linear polyorganosiloxane (a1)> The linear polyorganosiloxane (a1) has an alkenyl group having 2 to 40 carbon atoms bonded to a silicon atom. The linear polyorganosiloxane (a1) is represented by, for example, the following formula (a1). (In formula (a1), R １ａ Each independently represents a group bonded to a silicon atom, which is an alkenyl group having 2 to 40 carbon atoms or an optionally substituted alkyl group. However, at least one of R １ａ is an alkenyl group having 2 to 40 carbon atoms. s represents an integer of 1 or more.)

[0016] In one example, at least two of R[[ID=A]] １ａ are alkenyl groups. In one example, the average degree of polymerization represented by s + 2 is 50 to 2000.

[0017] The alkenyl group may be linear, branched or cyclic, and the number of its carbon atoms is not particularly limited, but is usually 2 to 40, preferably 30 or less, more preferably 20 or less, and even more preferably 10 or less. Specific examples of the alkenyl group include a vinyl group, an allyl group, a butenyl group, a pentenyl group and the like.

[0018] R １ａThe alkyl group which may be substituted may be linear, branched, or cyclic, but linear or branched alkyl groups are preferred, and the number of carbon atoms is not particularly limited but is usually 1 to 40, preferably 30 or less, more preferably 20 or less, and even more preferably 10 or less. Examples of substituents include halogen atoms, nitro groups, cyano groups, amino groups, hydroxyl groups, carboxyl groups, aryl groups, heteroaryl groups, etc. Specific examples of substituted linear or branched alkyl groups include methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, s-butyl group, tert-butyl group, n-pentyl group, 1-methyl-n-butyl group, 2-methyl-n-butyl group, 3-methyl-n-butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl-n-propyl group, 2,2-dimethyl-n-propyl group, 1-ethyl-n-propyl group, n-hexyl group, 1-methyl-n-pentyl group, 2-methyl-n-pentyl group, 3-methyl-n-pentyl group, and 4-methyl-n-pentyl group. Examples of methyl groups include, but are not limited to, 1,1-dimethyl-n-butyl group, 1,2-dimethyl-n-butyl group, 1,3-dimethyl-n-butyl group, 2,2-dimethyl-n-butyl group, 2,3-dimethyl-n-butyl group, 3,3-dimethyl-n-butyl group, 1-ethyl-n-butyl group, 2-ethyl-n-butyl group, 1,1,2-trimethyl-n-propyl group, 1,2,2-trimethyl-n-propyl group, 1-ethyl-1-methyl-n-propyl group, and 1-ethyl-2-methyl-n-propyl group. The number of carbon atoms is usually 1 to 14, preferably 1 to 10, and more preferably 1 to 6. Among these, the methyl group is particularly preferred.

[0019] The viscosity of the linear polyorganosiloxane (a1) is not particularly limited, but is usually 10 to 100,000 mPa·s at 25°C, and preferably 100 to 10,000 mPa·s. In this invention, viscosity is the viscosity measured by an E-type rotational viscometer at 25°C.

[0020] <Linear polyorganosiloxane (a2)> Linear polyorganosiloxane (a2) has Si-H groups. Linear polyorganosiloxane (a2) can be represented by, for example, the following formula (a2). (In formula (a2), R １ｂ Each of these independently represents an alkyl group that bonds to a silicon atom and may be substituted. a and d are each independently 0 or 1, and a + d = 2. b and c are each independently integers greater than or equal to 0. At least one of c and d is not 0. a + b + c + d represents an integer between 5 and 80.

[0021] A linear polyorganosiloxane (a2) represented by formula (a2) satisfies, for example, the following formula (a21): 0.05 ≤ (c + d) / (a ​​+ b + c + d) ≤ 0.70 (a2 - 1)

[0022] R １ｂ Specific examples and preferred examples of optionally substituted alkyl groups in R １ａ Examples include the specific and preferred examples given in the description of the optionally substituted alkyl groups.

[0023] The viscosity of the linear polyorganosiloxane (a2) is not particularly limited, but is usually 10 to 100,000 mPa·s at 25°C, and preferably 100 to 10,000 mPa·s.

[0024] The weight-average molecular weight of polysiloxanes such as polyorganosiloxane (a1) and polyorganosiloxane (a2) is not particularly limited, but is usually 500 to 1,000,000 each, and is preferably 5,000 to 50,000 from the viewpoint of reproducibly realizing the effects of the present invention. In this invention, the weight-average molecular weight, number-average molecular weight, and degree of dispersion of polyorganosiloxane can be measured, for example, using a GPC instrument (EcoSEC, HLC-8320GPC manufactured by Tosoh Corporation) and a GPC column (TSKgel SuperMultiporeHZ-N, TSKgel SuperMultiporeHZ-H manufactured by Tosoh Corporation), with a column temperature of 40°C, tetrahydrofuran as the eluent (elution solvent), a flow rate (flow velocity) of 0.35 mL / min, and polystyrene (Shodex manufactured by Showa Denko K.K.) as the standard sample.

[0025] The mass ratio (a1:a2) of linear polyorganosiloxane (a1) to linear polyorganosiloxane (a2) in the adhesive composition is not particularly limited, but is preferably 15:1 to 1:1, and more preferably 10:1 to 5:1.

[0026] The total content of linear polyorganosiloxane (a1) and linear polyorganosiloxane (a2) in the adhesive composition is not particularly limited, but is preferably 80% to 99.9% by mass, and more preferably 95% to 99% by mass, relative to the film constituent components. In this invention, film constituent components refer to components other than the solvent contained in the composition.

[0027] <Catalyst (a3)> The adhesive composition may contain a catalyst (a3) ​​to promote the hydrosilylation reaction between a linear polyorganosiloxane (a1) and a linear polyorganosiloxane (a2). The catalyst (a3) ​​is not particularly limited as long as it promotes the hydrosilylation reaction between an alkenyl group and a Si-H group. Examples of catalysts (a3) ​​include platinum group metal catalysts. Platinum group metal catalysts are platinum-based metal catalysts.

[0028] Specific examples of platinum-based metal catalysts include known platinum-based compounds (platinum or compounds containing platinum). Specific examples include platinum powder, platinum black, chloroplatinic acid, alcohol-modified chloroplatinic acid, complexes of chloroplatinic acid with diolefins, platinum-olefin complexes, platinum-carbonyl complexes (e.g., platinum-bis(acetacetate), platinum-bis(acetylacetonate)), chloroplatinic acid-alkenylsiloxane complexes (e.g., chloroplatinic acid-divinyltetramethyldisiloxane complex, chloroplatinic acid-tetravinyltetramethylcyclotetrasiloxane complex), platinum-alkenylsiloxane complexes (e.g., platinum-divinyltetramethyldisiloxane complex, platinum-tetravinyltetramethylcyclotetrasiloxane complex), and complexes of chloroplatinic acid with acetylene alcohols. Among these, platinum-alkenylsiloxane complexes are particularly preferred due to their high efficacy in promoting hydrosilylation reactions. These hydrosilylation catalysts may be used individually or in combination of two or more.

[0029] The content of catalyst (a3) ​​in the adhesive composition is not particularly limited, but is, for example, in the range of 0.1 to 50.0 ppm relative to the total mass of linear polyorganosiloxane (a1) and linear polyorganosiloxane (a2).

[0030] <Polymerization Inhibitor (a4)> The adhesive composition may contain a polymerization inhibitor (a4) for the purpose of suppressing the progress of the hydrosilylation reaction. The polymerization inhibitor (a4) is not particularly limited as long as it can suppress the progress of the hydrosilylation reaction, but specific examples include, but are not limited to, alkynyl alkyl alcohols which may be substituted with an aryl group such as 1-ethynyl-1-cyclohexanol and 1,1-diphenyl-2-propyne-1-ol.

[0031] The linear polyorganosiloxane (a1), linear polyorganosiloxane (a2), catalyst (a3), and polymerization inhibitor (a4) may be referred to as adhesive components.

[0032] <Release Agent Component> From the viewpoint of suitably obtaining the effects of the present invention, it is preferable that the adhesive composition does not contain a release agent component. The release agent component is not particularly limited, but from the viewpoint of more suitably obtaining the effects of the present invention, polyorganosiloxane is preferred. Polyorganosiloxane as a release agent component does not usually react with adhesive components. For example, polyorganosiloxane as a release agent component is a component that does not undergo hydrosilylation reactions.

[0033] The polyorganosiloxane is not particularly limited and examples include polydimethylsiloxane, epoxy group-containing polyorganosiloxane, phenyl group-containing polyorganosiloxane, and carbinol-modified polyorganosiloxane.

[0034] <Solvent> The adhesive composition may contain a solvent for purposes such as adjusting viscosity. Specific examples of such solvents include, but are not limited to, aliphatic hydrocarbons, aromatic hydrocarbons, and ketones. More specifically, examples include, but are not limited to, hexane, heptane, octane, nonane, isononane, decane, undecane, dodecane, isododecane, menthane, limonene, toluene, xylene, mesitylene, cumene, MIBK (methyl isobutyl ketone), butyl acetate, diisobutyl ketone, 2-octanone, 2-nonanone, 5-nonanone, cyclohexanone, propylene glycol monomethyl ether acetate, and propylene glycol monomethyl ether. Such solvents can be used individually or in combination of two or more.

[0035] If the adhesive composition contains a solvent, its content is appropriately set considering the viscosity of the desired composition, the application method used, the thickness of the thin film to be produced, etc., but is typically in the range of about 10 to 90% by mass of the entire composition.

[0036] The viscosity of the adhesive composition is not particularly limited, but is usually 500 to 20,000 mPa·s at 25°C, and preferably 1,000 to 10,000 mPa·s.

[0037] (Laminate) The laminate of the present invention comprises a compound semiconductor substrate, a support substrate, and an adhesive layer. In the laminate, the adhesive layer is provided between the compound semiconductor substrate and the support substrate. The laminate may further have a release agent layer. The laminate is a laminate in which the compound semiconductor substrate is temporarily bonded during processing. The adhesive layer is an adhesive layer formed from the adhesive composition of the present invention.

[0038] The laminate of the present invention is used to temporarily bond a compound semiconductor substrate when processing the compound semiconductor substrate. While the compound semiconductor substrate is being processed, such as thinning, the compound semiconductor substrate is supported by a support substrate. On the other hand, after processing the compound semiconductor substrate, the support substrate and the compound semiconductor substrate are separated. When the compound semiconductor substrate is processed, such as thinning, the compound semiconductor substrate may warp. By supporting the compound semiconductor substrate on the support substrate via an adhesive layer during processing, warping of the compound semiconductor substrate caused by processing can be suppressed.

[0039] After the compound semiconductor substrate and the support substrate are separated, any residue of the release agent layer or adhesive layer remaining on the compound semiconductor substrate or the support substrate can be removed, for example, by a cleaning agent composition for cleaning compound semiconductor substrates.

[0040] <Compound Semiconductor Substrate> Examples of compound semiconductor substrates include substrates on which a large number of compound semiconductor chip precursors, which are processed and pulverized to become compound semiconductor chips, are arranged. Examples of compound semiconductor chips include power semiconductors and GaN HEMTs. Examples of compound semiconductors in compound semiconductor substrates include SiC, GaN, GaAs, and Ga ２ O ３ The compound semiconductor substrate comprises at least one of the following: and AlGaAs. When there are two or more compound semiconductors constituting the compound semiconductor substrate, the two or more compound semiconductors are stacked in layers, for example. Transistors are formed on the surface of the compound semiconductor substrate, for example. Examples of transistors include bipolar transistors and field-effect transistors.

[0041] The shape of the compound semiconductor substrate is not particularly limited, but for example, it is disc-shaped. The disc-shaped compound semiconductor substrate does not need to have a perfectly circular surface; for example, the outer edge of the compound semiconductor substrate may have a straight section called an orientation flat, or a notch. The thickness of the disc-shaped compound semiconductor substrate is not particularly limited and can be determined appropriately depending on the intended use of the compound semiconductor substrate, but for example, it is 500 to 1,000 μm. The diameter of the disc-shaped compound semiconductor substrate is not particularly limited and can be determined appropriately depending on the intended use of the compound semiconductor substrate, but for example, it is 100 to 1,000 mm.

[0042] <Support Substrate> The support substrate is not particularly limited as long as it is a material that can support the compound semiconductor substrate when the compound semiconductor substrate is being processed, but examples include glass support substrates and sapphire support substrates.

[0043] The shape of the support substrate is not particularly limited, but for example, it can be disc-shaped. The disc-shaped support substrate does not need to have a perfectly circular surface; for example, the outer circumference of the support substrate may have a straight section called an orientation flat or a notch. The thickness of the disc-shaped support substrate can be appropriately determined according to the size of the compound semiconductor substrate, etc., and is not particularly limited, but for example, it is 500 to 1,000 μm. The diameter of the disc-shaped support substrate can be appropriately determined according to the size of the compound semiconductor substrate, etc., and is not particularly limited, but for example, it is 100 to 1,000 mm.

[0044] Examples of support substrates include glass wafers and sapphire wafers with a diameter of approximately 300 mm and a thickness of approximately 700 μm.

[0045] Furthermore, when delamination in a laminate is performed by light irradiation, a support substrate is used that is light-transmitting to the light used. Examples of such substrates include glass support substrates and sapphire support substrates.

[0046] <Adhesive Layer> The adhesive layer is provided between the support substrate and the compound semiconductor substrate. The adhesive layer is in contact with the compound semiconductor substrate, for example. The adhesive layer may also be in contact with the support substrate, for example. The adhesive layer is, for example, an adhesive layer formed from the adhesive composition of the present invention.

[0047] The thickness of the adhesive layer is not particularly limited, but is usually 5 to 500 μm. From the viewpoint of maintaining film strength, it is preferably 10 μm or more, more preferably 20 μm or more, and even more preferably 30 μm or more. From the viewpoint of avoiding non-uniformity caused by thick films, it is preferably 200 μm or less, more preferably 150 μm or less, even more preferably 120 μm or less, and still more preferably 100 μm or less.

[0048] <Release Agent Layer> The laminate may have a release agent layer. In a laminate having a release agent layer, separation of the compound semiconductor substrate and the support substrate is performed, for example, by light irradiation of the release agent layer. The release agent layer is provided between the compound semiconductor substrate and the support substrate. The release agent layer is in contact with, for example, the adhesive layer. The release agent layer is provided between, for example, the adhesive layer and the support substrate. The release agent layer is formed from, for example, a release agent composition.

[0049] The thickness of the release agent layer is not particularly limited, but is usually 5 nm to 100 μm, 10 nm to 10 μm in one embodiment, 50 nm to 1 μm in another embodiment, and 100 nm to 700 nm in yet another embodiment.

[0050] <<Release Agent Composition>> The release agent composition contains, for example, at least an organic resin or a polynuclear phenol derivative, and optionally other components. The organic resin is preferably one that can exhibit suitable release ability, and when the compound semiconductor substrate and the support substrate are separated by light irradiation of the release agent layer, the organic resin preferably absorbs light and undergoes the necessary alteration, such as decomposition, to improve the release ability.

[0051] A laminate having a release agent layer formed from a release agent composition can be peeled off without applying excessive load for peeling by, for example, irradiating the release agent layer with a laser. The release agent layer of the laminate has a reduced adhesive strength compared to before irradiation, for example, when irradiated with a laser. That is, in the laminate, for example, while a compound semiconductor substrate is being processed such as thinning, the compound semiconductor substrate is suitably supported on a laser-transmitting support substrate via an adhesive layer and a release agent layer. After processing is complete, by irradiating a laser from the support substrate side, the laser that has passed through the support substrate is absorbed by the release agent layer, causing alteration (e.g., separation) of the release agent layer at the interface between the release agent layer and the adhesive layer, at the interface between the release agent layer and the support substrate, or within the release agent layer itself. As a result, suitable peeling (separation) can be achieved without applying excessive load for peeling.

[0052] Examples of organic resins include novolac resins. Further details will be provided later.

[0053] In a preferred embodiment, the release agent composition contains at least a novolac resin and optionally other components such as a crosslinking agent, an acid generator, an acid, a surfactant, or a solvent. In another preferred embodiment, the release agent composition contains at least a polynuclear phenol derivative and a crosslinking agent, and optionally other components such as an acid generator, an acid, a surfactant, or a solvent. In yet another preferred embodiment, the release agent composition contains at least an organic resin and a branched polysilane, and optionally other components such as a crosslinking agent, an acid generator, an acid, a surfactant, or a solvent.

[0054] <<<Novolac resin>>> Novolac resin is a resin obtained by condensing at least one of a phenolic compound, a carbazole compound, and an aromatic amine compound with at least one of an aldehyde compound, a ketone compound, and a divinyl compound under acid catalyst.

[0055] Examples of phenolic compounds include phenols, naphthols, antrols, and hydroxypyrenes. Examples of phenols include phenol, cresol, xylenol, resorcinol, bisphenol A, p-tert-butylphenol, p-octylphenol, 9,9-bis(4-hydroxyphenyl)fluorene, and 1,1,2,2-tetrakis(4-hydroxyphenyl)ethane. Examples of naphthols include 1-naphthol, 2-naphthol, 1,5-dihydroxynaphthalene, 2,7-dihydroxynaphthalene, and 9,9-bis(6-hydroxynaphthyl)fluorene. Examples of antrols include 9-antrol. Examples of hydroxypyrenes include 1-hydroxypyrene and 2-hydroxypyrene. Examples of carbazole compounds include carbazole, 1,3,6,8-tetranitrocarbazole, 3,6-diaminocarbazole, 3,6-dibromo-9-ethylcarbazole, 3,6-dibromo-9-phenylcarbazole, 3,6-dibromocarbazole, 3,6-dichlorocarbazole, 3-amino-9-ethylcarbazole, 3-bromo-9-ethylcarbazole, 4,4'bis(9H-carbazole-9-yl)biphenyl, 4-glycidylcarbazole, 4-hydroxycarbazole, and 9-(1H-benzotriazole-1-ylmethyl Examples include (9-ethylcarbazole-9H-carbazole, 9-acetyl-3,6-diiodocarbazole, 9-benzoylcarbazole, 9-benzoylcarbazole-6-dicarboxyaldehyde, 9-benzylcarbazole-3-carboxyaldehyde, 9-methylcarbazole, 9-phenylcarbazole, 9-vinylcarbazole, potassium carbazole, carbazole-N-carbonyl chloride, N-ethylcarbazole-3-carboxyaldehyde, and N-((9-ethylcarbazole-3-yl)methylene)-2-methyl-1-indolinylamine. Examples of aromatic amine compounds include diphenylamine and N-phenyl-1-naphthylamine. These can be used individually or in combination of two or more. They may also have substituents.For example, these may have substituents on the aromatic ring.

[0056] Examples of aldehyde compounds include formaldehyde, paraformaldehyde, acetaldehyde, propylaldehyde, butyraldehyde, isobutyraldehyde, valeraldehyde, caproaldehyde, 2-methylbutyraldehyde, hexylaldehyde, undecanealdehyde, 7-methoxy-3,7-dimethyloctylaldehyde, cyclohexanealdehyde, 3-methyl-2-butyraldehyde, glyoxal, malonaldehyde, succinaldehyde, glutaraldehyde, and azipi Examples of suitable aldehydes include saturated aliphatic aldehydes such as ammonium aldehydes, unsaturated aliphatic aldehydes such as acrolein and methacrolein, heterocyclic aldehydes such as furfural and pyridine aldehyde, and aromatic aldehydes such as benzaldehyde, naphthyl aldehyde, anthryl aldehyde, phenanthryl aldehyde, salicyl aldehyde, phenylacetaldehyde, 3-phenylpropionaldehyde, tolyl aldehyde, (N,N-dimethylamino)benzaldehyde, and acetoxybenzaldehyde. Among these, aromatic aldehydes are preferred. Examples of suitable ketone compounds include diaryl ketone compounds such as diphenyl ketone, phenylnaphthyl ketone, dinaphthyl ketone, phenyltolyl ketone, and ditolyl ketone. Examples of divinyl compounds include divinylbenzene, dicyclopentadiene, tetrahydroindene, 4-vinylcyclohexene, 5-vinylnoborna-2-ene, divinylpyrene, limonene, and 5-vinylnorbornadiene. These can be used individually or in combination of two or more.

[0057] Novolac resin is a type of novolac resin that absorbs and alters upon exposure to light irradiated from the support substrate side. This alteration is, for example, photodegradation.

[0058] Novolac resin includes, for example, at least one of the structural units represented by the following formula (C1-1), the following formula (C1-2), and the following formula (C1-3).

[0059]

[0060] In the formula, C １ This represents a group derived from an aromatic compound containing a nitrogen atom, C ２ This represents a group containing a tertiary carbon atom having at least one selected from the group consisting of secondary carbon atoms, quaternary carbon atoms, and aromatic rings in its side chain, C ３ This represents a group derived from an aliphatic polycyclic compound, C ４ This represents a group derived from phenol, a group derived from bisphenol, a group derived from naphthol, a group derived from biphenyl, or a group derived from biphenol.

[0061] In other words, novolac resin contains, for example, one or more of the following structural units: • A structural unit having a bond between a group derived from an aromatic compound containing a nitrogen atom and a group containing a tertiary carbon atom having at least one selected from the group consisting of a secondary carbon atom, a quaternary carbon atom, and an aromatic ring as a side chain (Formula (C1-1)) • A structural unit having a bond between a group derived from an aromatic compound containing a nitrogen atom and a group derived from an aliphatic polycyclic compound (Formula (C1-2)) • A structural unit having a bond between a group derived from phenol, bisphenol, naphthol, biphenyl, or biphenol and a group containing a tertiary carbon atom having at least one selected from the group consisting of a quaternary carbon atom and an aromatic ring as a side chain (Formula (C1-3))

[0062] In a preferred embodiment, the novolac resin comprises either or both of the following structural units: a structural unit having a bond between a group derived from an aromatic compound containing a nitrogen atom and a group containing a tertiary carbon atom having at least one selected from the group consisting of a secondary carbon atom, a quaternary carbon atom, and an aromatic ring in its side chain (formula (C1-1)); and a structural unit having a bond between a group derived from an aromatic compound containing a nitrogen atom and a group derived from an aliphatic polycyclic compound (formula (C1-2)).

[0063] C １ The group derived from an aromatic compound containing a nitrogen atom can be, for example, a group derived from carbazole, a group derived from N-phenyl-1-naphthylamine, a group derived from N-phenyl-2-naphthylamine, etc., but is not limited to these.２ A group comprising a tertiary carbon atom having at least one selected from the group consisting of a secondary carbon atom, a quaternary carbon atom, and an aromatic ring as a side chain can be, for example, a group derived from 1-naphthaldehyde, a group derived from 1-pyrenecarboxyaldehyde, a group derived from 4-(trifluoromethyl)benzaldehyde, a group derived from acetaldehyde, etc., but is not limited to these. ３ The group derived from the aliphatic polycyclic compound may be, but is not limited to, a group derived from dicyclopentadiene. ４ This group is derived from phenol, bisphenol, naphthol, biphenyl, or biphenol.

[0064] In a preferred embodiment, the novolac resin includes, for example, a structural unit represented by the following formula (C1-1-1) as a structural unit represented by formula (C1-1-1).

[0065]

[0066] In formula (C1-1-1), R ９０１ and R ９０２ R represents a substituent that substitutes for the ring, and each independently represents a halogen atom, a nitro group, a cyano group, an amino group, a hydroxyl group, a carboxyl group, an optionally substituted alkyl group, an optionally substituted alkenyl group, or an optionally substituted aryl group. ９０３ R represents a hydrogen atom, an optionally substituted alkyl group, an optionally substituted alkenyl group, or an optionally substituted aryl group. ９０４ R represents a hydrogen atom, an optionally substituted aryl group, or an optionally substituted heteroaryl group. ９０５ R represents an optionally substituted alkyl group, an optionally substituted aryl group, or an optionally substituted heteroaryl group. ９０４ The base and R ９０５The groups may bond with each other to form a divalent group. Examples of substituents on alkyl and alkenyl groups include halogen atoms, nitro groups, cyano groups, amino groups, hydroxyl groups, carboxyl groups, aryl groups, and heteroaryl groups. Examples of substituents on aryl and heteroaryl groups include halogen atoms, nitro groups, cyano groups, amino groups, hydroxyl groups, carboxyl groups, alkyl groups, and alkenyl groups. １ and h ２ Each of these independently represents an integer between 0 and 3.

[0067] The number of carbon atoms in the optionally substituted alkyl groups and optionally substituted alkenyl groups is usually 40 or less, preferably 30 or less, and more preferably 20 or less, from the viewpoint of solubility. The number of carbon atoms in the optionally substituted aryl groups and heteroaryl groups is usually 40 or less, preferably 30 or less, and more preferably 20 or less, from the viewpoint of solubility.

[0068] Examples of halogen atoms include fluorine, chlorine, bromine, and iodine.

[0069] The following are specific examples of structural units represented by formula (C1-1-1), but are not limited to these.

[0070]

[0071] In a preferred embodiment, the novolac resin includes, for example, a structural unit represented by formula (C1-1-2) below, as a structural unit represented by formula (C1-1).

[0072]

[0073] In formula (C1-1-2), Ar ９０１ and Ar ９０２ Each of these independently represents an aromatic ring such as a benzene ring or a naphthalene ring, and R ９０１ ~R ９０５ and h １ and h ２ This expresses the same meaning as above.

[0074] The following are specific examples of structural units represented by formula (C1-1-2), but are not limited to these.

[0075]

[0076] In a preferred embodiment, the novolac resin includes structural units represented by formula (C1-2), for example, structural units represented by the following formulas (C1-2-1) or (C1-2-2).

[0077]

[0078] In the above formula, R ９０６ ~R ９０９ is a substituent bonded to the ring, each independently representing a halogen atom, a nitro group, a cyano group, an amino group, a hydroxyl group, a carboxyl group, an optionally substituted alkyl group, an optionally substituted alkenyl group, or an optionally substituted aryl group. Specific examples and preferred carbon numbers of the halogen atom, optionally substituted alkyl group, optionally substituted alkenyl group, and optionally substituted aryl group are the same as those described above. ３ ~h ６ Each of these independently represents an integer from 0 to 3, and R ９０１ ~R ９０３ and h １ and h ２ This expresses the same meaning as above.

[0079] The following are specific examples of structural units represented by formulas (C1-2-1) and (C1-2-2), but are not limited to these.

[0080]

[0081] The following are specific examples of structural units represented by formula (C1-3), but are not limited to these.

[0082]

[0083] As mentioned above, novolac resins are resins obtained by condensing at least one of a phenolic compound, a carbazole compound, and an aromatic amine compound with at least one of an aldehyde compound, a ketone compound, and a divinyl compound under an acid catalyst. In this condensation reaction, for example, an aldehyde compound or ketone compound is usually used in a ratio of 0.1 to 10 equivalents per equivalent of the benzene ring constituting the ring of the carbazole compound.

[0084] In the above condensation reaction, an acid catalyst is usually used. Examples of acid catalysts include, but are not limited to, mineral acids such as sulfuric acid, phosphoric acid, and perchloric acid; organic sulfonic acids such as p-toluenesulfonic acid and p-toluenesulfonic acid monohydrate; and carboxylic acids such as formic acid and oxalic acid. The amount of acid catalyst is determined appropriately depending on the type of acid used and cannot be specified in general terms, but it is usually set appropriately from the range of 0.001 to 10,000 parts by mass per 100 parts by mass of the carbazole compound.

[0085] The above condensation reaction can sometimes be carried out without a solvent if either the starting compound or the acid catalyst is a liquid, but it is usually carried out with a solvent. Such solvents are not particularly limited as long as they do not inhibit the reaction, but typical examples include ether compounds such as tetrahydrofuran and cyclic ether compounds such as dioxane.

[0086] The reaction temperature is usually determined appropriately within the range of 40°C to 200°C, and the reaction time cannot be specified in general terms as it varies depending on the reaction temperature, but it is usually determined appropriately within the range of 30 minutes to 50 hours.

[0087] After the reaction is complete, if necessary, the novolac resin is purified and isolated according to standard procedures and used in the preparation of the release agent composition. A person skilled in the art can determine the production conditions for the novolac resin without undue burden based on the above description and common technical knowledge, and therefore can produce the novolac resin.

[0088] The weight-average molecular weight of organic resins such as novolac resin is usually 500 to 200,000. From the viewpoint of ensuring solubility in solvents and ensuring good mixing with branched polysilanes when formed into a film to obtain a uniform film, it is preferably 100,000 or less, more preferably 50,000 or less, even more preferably 10,000 or less, still more preferably 5,000 or less, and still more preferably 3,000 or less. From the viewpoint of improving the strength of the film, it is preferably 600 or more, more preferably 700 or more, even more preferably 800 or more, still more preferably 900 or more, and still more preferably 1,000 or more. In this invention, the weight-average molecular weight, number-average molecular weight, and degree of dispersion of organic resins such as novolac resins, which are polymers, can be measured, for example, using a GPC instrument (EcoSEC, HLC-8320GPC manufactured by Tosoh Corporation) and a GPC column (TSKgel SuperMultiporeHZ-N, TSKgel SuperMultiporeHZ-H manufactured by Tosoh Corporation), with a column temperature of 40°C, tetrahydrofuran as the eluent (elution solvent), a flow rate (flow rate) of 0.35 mL / min, and polystyrene (manufactured by Sigma-Aldrich) as the standard sample.

[0089] The organic resin contained in the above-mentioned release agent composition is preferably novolac resin. Therefore, the above-mentioned release agent composition preferably contains novolac resin alone as the organic resin. However, other polymers may be included together with the novolac resin for purposes such as adjusting the film properties. Examples of such other polymers include polyacrylic acid ester compounds, polymethacrylic acid ester compounds, polyacrylamide compounds, polymethacrylamide compounds, polyvinyl compounds, polystyrene compounds, polymaleimide compounds, polymaleic anhydride, and polyacrylonitrile compounds.

[0090] The content of novolac resin in the release agent composition is not particularly limited, but it is preferably 70% by mass or more relative to the total amount of polymer contained in the release agent composition. The content of novolac resin in the release agent composition is not particularly limited, but it is preferably 50 to 100% by mass relative to the film constituent components. In this invention, film constituent components refer to components other than the solvent contained in the composition.

[0091] <<<Polynuclear phenol derivatives>>> Polynuclear phenol derivatives are represented, for example, by the following formula (P).

[0092] In formula (P), Ar represents an arylene group, and its carbon number is not particularly limited, but is usually 6 to 60. From the viewpoint of preparing a release agent composition with excellent uniformity and obtaining a release agent layer with higher flatness with good reproducibility, it is preferably 30 or less, more preferably 20 or less, even more preferably 18 or less, and still more preferably 12 or less.

[0093] Specific examples of such arylene groups include 1,2-phenylene, 1,3-phenylene, 1,4-phenylene; 1,5-naphthalenediyl, 1,8-naphthalenediyl, 2,6-naphthalenediyl, 2,7-naphthalenediyl, 1,2-anthracenediyl, 1,3-anthracenediyl, 1,4-anthracenediyl, 1,5-anthracenediyl, 1,6-anthracenediyl, 1,7-anthracenediyl, 1,8-anthracenediyl, and 2,3-anthracenediyl. Examples include, but are not limited to, groups derived by removing two hydrogen atoms from the aromatic ring of fused ring aromatic hydrocarbon compounds such as diyl, 2,6-anthracenediyl, 2,7-anthracenediyl, 2,9-anthracenediyl, 2,10-anthracenediyl, and 9,10-anthracenediyl groups; and groups derived by removing two hydrogen atoms from the aromatic ring of ring-linked ring aromatic hydrocarbon compounds such as biphenyl-4,4'-diyl group and paraterphenyl-4,4''-diyl group.

[0094] From the viewpoint of obtaining a laminate that exhibits good peelability as a release agent layer and allows for good separation of the support substrate with good reproducibility, the polynuclear phenol derivative represented by formula (P) is preferably a polynuclear phenol derivative represented by formula (P-1), more preferably a polynuclear phenol derivative represented by formula (P-1-1), and even more preferably a polynuclear phenol derivative represented by formula (P1).

[0095]

[0096] The content of the polynuclear phenol derivative in the release agent composition is not particularly limited, but it is preferably 50 to 100% by mass relative to the film components.

[0097] <<<Branched Polysilane>>> The above release agent composition may contain branched polysilane. Branched polysilane has Si-Si bonds and a branched structure. When branched polysilane is included in the above release agent composition, the release agent layer formed by the resulting film cannot be suitably removed by organic solvents, acids, or chemicals used in the manufacture of semiconductor devices (alkaline developer, hydrogen peroxide, etc.), but can be suitably removed by the cleaning agent composition. As a result, after separating the compound semiconductor substrate and the support substrate of the laminate, the residue of the release agent layer on the substrate can be suitably removed by washing each substrate with the cleaning agent composition. Although the reason is not entirely clear, depending on the type of end groups (end substituents (atoms)) of the polysilane, the polysilane can react with organic resins and crosslink. Furthermore, since branched polysilanes have more end groups (end substituents (atoms)) than linear polysilanes, it is thought that branched polysilanes have more crosslinking points than linear polysilanes. It is presumed that moderate and suitable curing via these more crosslinking points in branched polysilanes makes it possible to achieve both the property of being unsuitably removed by organic solvents, acids, and chemicals used in the manufacture of semiconductor devices (alkaline developers, hydrogen peroxide, etc.) and the property of being suitablely removed by cleaning agent compositions.

[0098] The branched polysilane preferably contains a structural unit represented by formula (B).

[0099]

[0100] In formula (B), R Ｂ The group represents a hydrogen atom, a hydroxyl group, a silyl group, or an organic group. Specific examples of such organic groups include hydrocarbon groups (optionally substituted alkyl groups, optionally substituted alkenyl groups, optionally substituted aryl groups, optionally substituted aralkyl groups), and ether groups corresponding to these hydrocarbon groups (optionally substituted alkoxy groups, optionally substituted aryloxy groups, optionally substituted aralkyloxy groups, etc.). However, the organic group in question is usually a hydrocarbon group such as an alkyl group, alkenyl group, aryl group, or aralkyl group. Furthermore, hydrogen atoms, hydroxyl groups, alkoxy groups, silyl groups, etc., are often substituted at their terminal ends.

[0101] R Ｂ However, in the case of the above-mentioned organic group or silyl group, at least one of its hydrogen atoms may be substituted with a substituent. Specific examples of such substituents include hydroxyl groups, alkyl groups, aryl groups, and alkoxy groups.

[0102] From the viewpoint of suppressing unintended peeling when the laminate is brought into contact with an organic solvent, an acid, or a chemical solution used in the manufacture of semiconductor devices (such as an alkaline developer or hydrogen peroxide), and from the viewpoint of suitably removing the residue of the release agent layer on the substrate when the compound semiconductor substrate and the support substrate of the laminate are separated and then washed with a cleaning agent composition, R Ｂ The group is preferably an alkyl group or an aryl group, more preferably an aryl group, even more preferably a phenyl group, a 1-naphthyl group or a 2-naphthyl group, and even more preferably a phenyl group.

[0103] The branched-chain polysilane may contain structural units represented by formula (B), as well as structural units represented by formula (S) and formula (N). However, from the viewpoint of suppressing unintended peeling when the laminate is brought into contact with an organic solvent, an acid, or a chemical solution used in the manufacture of semiconductor devices (such as an alkaline developer or hydrogen peroxide), and from the viewpoint of suitably removing residue of the release agent layer on the substrate when the compound semiconductor substrate and the support substrate of the laminate are separated and then washed with a cleaning agent composition, the content of structural units represented by formula (B) in the branched-chain polysilane is usually 50 mol% or more, preferably 60 mol% or more, more preferably 70 mol% or more, even more preferably 80 mol% or more, even more preferably 90% or more, and even more preferably 95 mol% or more of the total structural units.

[0104] (R Ｓ１ and Ｓ２ R Ｂ (This expresses the same meaning.)

[0105] The terminal groups (terminal substituents (atoms)) of branched polysilanes are usually hydrogen atoms, hydroxyl groups, halogen atoms (such as chlorine atoms), alkyl groups, aryl groups, alkoxy groups, silyl groups, etc. Among these, hydroxyl groups, methyl groups, and phenyl groups are most common, with methyl groups being preferred, and the terminal group may be a trimethylsilyl group.

[0106] In one embodiment, the average degree of polymerization of the branched polysilane is typically 2 to 100, preferably 3 to 80, more preferably 5 to 50, and even more preferably 10 to 30, in terms of silicon atoms (i.e., the average number of silicon atoms per molecule). In another embodiment, the upper limit of the weight-average molecular weight of the branched polysilane is typically 30,000, preferably 20,000, more preferably 10,000, even more preferably 5,000, still more preferably 2,000, and even more preferably 1,500, and the lower limit is typically 50, preferably 100, more preferably 150, even more preferably 200, even more preferably 300, and even more preferably 500. The average degree of polymerization and weight-average molecular weight of branched polysilanes can be measured, for example, using a GPC instrument (EcoSEC, HLC-8220GPC manufactured by Tosoh Corporation) and a GPC column (Shodex KF-803L, KF-802, and KF-801 manufactured by Showa Denko K.K., used in this order), with a column temperature of 40°C, tetrahydrofuran as the eluent (elution solvent), a flow rate of 1.00 mL / min, and polystyrene (manufactured by Sigma-Aldrich) as the standard sample. If the degree of polymerization and weight-average molecular weight of the branched polysilane used are too low, heating during the formation of the release agent layer or during processing of the laminate containing the obtained release agent layer may cause the branched polysilane to vaporize or lead to defects due to insufficient film strength. If the degree of polymerization and molecular weight of the branched polysilane used are too high, depending on the type of solvent used to prepare the release agent composition, sufficient solubility may not be ensured, leading to precipitation in the composition or insufficient mixing with the resin, which may prevent the reproducibility of a highly uniform film. Therefore, from the viewpoint of obtaining a laminate containing a release agent layer that contributes to the suitable manufacture of semiconductor devices with even greater reproducibility, it is desirable that the degree of polymerization and weight-average molecular weight of the branched polysilane meet the above-mentioned range.

[0107] The 5% weight loss temperature of branched polysilane is typically 300°C or higher, preferably 350°C or higher, more preferably 365°C or higher, even more preferably 380°C or higher, even more preferably 395°C or higher, and even more preferably 400°C or higher, from the viewpoint of obtaining a release agent layer with excellent heat resistance and good reproducibility. The 5% weight loss temperature of branched polysilane can be measured, for example, by using a NETZSCH 2010SR under air conditions and raising the temperature from room temperature (25°C) to 400°C at a rate of 10°C / min.

[0108] When the compound semiconductor substrate and support substrate of a laminate are separated and then each substrate is washed with a cleaning agent composition, from the viewpoint of suitably removing the residue of the release agent layer on the substrate and from the viewpoint of preparing a release agent composition with excellent uniformity and reproducibility, it is preferable that the branched-chain polysilane dissolves in any of the following: ether compounds such as tetrahydrofuran, aromatic compounds such as toluene, glycol ether ester compounds such as propylene glycol monomethyl ether acetate, ketone compounds such as cyclohexanone and methyl ethyl ketone, and glycol ether compounds such as propylene glycol monomethyl ether. In this case, dissolution means that when attempting to dissolve the polysilane using a shaker at room temperature (25°C) to obtain a 10% by mass solution, it can be visually confirmed that it has dissolved within one hour.

[0109] The branched polysilane may be in either a solid or liquid state at room temperature.

[0110] Branched-chain polysilanes can be manufactured by referring to known methods described in, for example, Japanese Patent Publication No. 2011-208054, Japanese Patent Publication No. 2007-106894, Japanese Patent Publication No. 2007-145879, WO2005 / 113648, etc., or they can be obtained as commercially available products. Specific examples of commercially available products include, but are not limited to, the silicon material polysilanes OGSOL SI-20-10 and SI-20-14 manufactured by Osaka Gas Chemical Co., Ltd.

[0111] Suitable examples of branched polysilanes include, but are not limited to, the following. (Ph represents the phenyl group, R ＥEach of these independently represents a terminal substituent, an atom or a group, and n ｂ (This indicates the number of repeating units.)

[0112] The branched polysilane content in the above-mentioned stripping agent composition is usually 10 to 90% by mass relative to the film components. However, from the viewpoint of reproducibly achieving a film that cannot be suitably removed by organic solvents, acids, or chemicals used in the manufacture of semiconductor devices (alkaline developer, hydrogen peroxide, etc.) but can be suitably removed by the cleaning agent composition, the content is preferably 15 to 80% by mass, more preferably 20 to 70% by mass, even more preferably 25 to 60% by mass, and still more preferably 30 to 50% by mass.

[0113] <<<Crosslinking Agent>>> The release agent composition may contain a crosslinking agent. The crosslinking agent may undergo a crosslinking reaction by self-condensation, but if crosslinkable substituents are present in the novolac resin, it can undergo a crosslinking reaction with those crosslinkable substituents.

[0114] Specific examples of crosslinking agents are not limited to those mentioned above, but typically include phenolic crosslinking agents, melamine crosslinking agents, urea crosslinking agents, thiourea crosslinking agents, etc., which have crosslinking groups such as hydroxymethyl groups, methoxymethyl groups, butoxymethyl groups, and other alkoxymethyl groups in their molecules. These may be low molecular weight compounds or high molecular weight compounds. The crosslinking agent contained in the release agent composition usually has two or more crosslinking groups, but from the viewpoint of achieving more suitable curing with good reproducibility, the number of crosslinking groups contained in the crosslinking agent compound is preferably 2 to 10, more preferably 2 to 6. From the viewpoint of achieving higher heat resistance, the crosslinking agent contained in the release agent composition preferably has an aromatic ring (e.g., a benzene ring, a naphthalene ring) in its molecule, and typical examples of such crosslinking agents, though not limited to those mentioned above, include phenolic crosslinking agents.

[0115] A phenolic crosslinking agent having a crosslinking group is a compound having a crosslinking group bonded to an aromatic ring, and having at least one of a phenolic hydroxyl group and an alkoxy group derived from a phenolic hydroxyl group. Examples of such alkoxy groups derived from a phenolic hydroxyl group include, but are not limited to, methoxy groups and butoxy groups. The aromatic ring to which the crosslinking group is bonded and the aromatic ring to which the phenolic hydroxyl group and / or the alkoxy group derived from a phenolic hydroxyl group are bonded are not limited to non-fused aromatic rings such as benzene rings, but may also be fused aromatic rings such as naphthalene rings and anthracene rings. When multiple aromatic rings exist within the molecule of a phenolic crosslinking agent, the crosslinking group and the phenolic hydroxyl group and the alkoxy group derived from a phenolic hydroxyl group may be bonded to the same aromatic ring or to different aromatic rings within the molecule. The aromatic ring to which the crosslinking group, the phenolic hydroxyl group and the alkoxy group derived from a phenolic hydroxyl group are bonded may be further substituted with alkyl groups such as methyl groups, ethyl groups and butyl groups, hydrocarbon groups such as aryl groups such as phenyl groups, halogen atoms such as fluorine atoms, etc.

[0116] For example, specific examples of phenolic crosslinking agents having crosslinking groups include compounds represented by any of the formulas (L1) to (L4).

[0117]

[0118] In each formula, each R' independently represents a fluorine atom, an aryl group, or an alkyl group, and each R'' independently represents a hydrogen atom or an alkyl group, L １ and L ２ Each of these independently represents a single bond, a methylene group, or a propane-2,2-diyl group, L ３t11, t12 and t13 are integers satisfying 2≦t11≦5, 1≦t12≦4, 0≦t23≦2, and t21+t22+t23≦5, t24, t25 and t26 are integers satisfying 2≦t24≦4, 1≦t25≦3, 0≦t26≦2, and t24+t25+t26≦5, and t27, t28 and t29 are integers satisfying 0≦t27≦4, 0≦t28≦ 4 is an integer satisfying 0 ≤ t29 ≤ 4 and t27 + t28 + t29 ≤ 4, t31, t32 and t33 are integers satisfying 2 ≤ t31 ≤ 4, 1 ≤ t32 ≤ 3, 0 ≤ t33 ≤ 2 and t31 + t32 + t33 ≤ 5, t41, t42 and t43 are integers satisfying 2 ≤ t41 ≤ 3, 1 ≤ t42 ≤ 2, 0 ≤ t43 ≤ 1 and t41 + t42 + t43 ≤ 4, q1 is 2 or 3, q2 represents the number of repetitions and is an integer of 0 or more, specific examples of aryl groups and alkyl groups are the same as the specific examples below, but phenyl groups are preferred as aryl groups and methyl groups and t-butyl groups are preferred as alkyl groups.

[0119] The following are specific examples of compounds represented by formulas (L1) to (L4), but are not limited to these. These compounds may be synthesized by known methods, or they may be available as products from companies such as Asahi Organic Chemicals Co., Ltd. or Honshu Chemical Industry Co., Ltd.

[0120]

[0121]

[0122]

[0123]

[0124] A melamine-based crosslinking agent having a crosslinking group is a melamine derivative, a 2,4-diamino-1,3,5-triazine derivative, or a 2-amino-1,3,5-triazine derivative in which at least one hydrogen atom of the amino group bonded to the triazine ring is substituted with a crosslinking group, and the triazine ring may further have substituents such as aryl groups such as phenyl groups. Specific examples of melamine-based crosslinking agents having crosslinking groups include, but are not limited to, mono, bis, tris, tetrakiss, pentakiss, or hexakisalkoxymethyl melamine such as N,N,N',N',N'',N''-hexakis(butoxymethyl)melamine, mono, bis, tris, or tetrakisalkoxymethyl benzoguanamine such as N,N,N',N'-tetrakis(methoxymethyl)benzoguanamine, and N,N,N',N'-tetrakis(butoxymethyl)benzoguanamine.

[0125] A urea-based crosslinking agent having a crosslinking group is a derivative of a urea bond-containing compound having a structure in which at least one hydrogen atom of the NH group constituting the urea bond is substituted with a crosslinking group. Specific examples of urea-based crosslinking agents having a crosslinking group include, but are not limited to, mono, bis, tris, or tetrakisalkoxymethyl glycoluryls such as 1,3,4,6-tetrakis(methoxymethyl) glycoluryl and 1,3,4,6-tetrakis(butoxymethyl) glycoluryl, and mono, bis, tris, or tetrakisalkoxymethylureas such as 1,3-bis(methoxymethyl)urea and 1,1,3,3-tetrakismethoxymethylurea.

[0126] A thiourea-based crosslinking agent having a crosslinking group is a derivative of a thiourea bond-containing compound having a structure in which at least one hydrogen atom of the NH group constituting the thiourea bond is substituted with a crosslinking group. Specific examples of thiourea-based crosslinking agents having a crosslinking group include, but are not limited to, mono, bis, tris, or tetrakisalkoxymethylthioureas such as 1,3-bis(methoxymethyl)thiourea and 1,1,3,3-tetrakismethoxymethylthiourea.

[0127] The amount of crosslinking agent contained in the release agent composition cannot be specified in general terms as it varies depending on the coating method used, the desired film thickness, etc. However, it is usually 0.01 to 50% by mass relative to the organic resin or polynuclear phenol derivative. From the viewpoint of achieving suitable curing and obtaining a laminate in which the compound semiconductor substrate and the support substrate can be well separated with good reproducibility, it is preferably 0.1% by mass or more, more preferably 1% by mass or more, even more preferably 3% by mass or more, still more preferably 5% by mass or more, preferably 45% by mass or less, more preferably 40% by mass or less, even more preferably 35% by mass or less, and still more preferably 30% by mass or less.

[0128] <<<Acid Generator and Acid>>> For the purpose of promoting the crosslinking reaction, etc., the release agent composition may contain an acid generator and an acid.

[0129] Examples of acid generators include thermal acid generators and photoacid generators. Thermal acid generators are not particularly limited as long as they generate acid with heat, and specific examples include, but are not limited to, 2,4,4,6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl tosylate, K-PURE® CXC-1612, CXC-1614, TAG-2172, TAG-2179, TAG-2678, TAG2689, TAG2700 (manufactured by King Industries), and SI-45, SI-60, SI-80, SI-100, SI-110, SI-150 (manufactured by Sanshin Chemical Industry Co., Ltd.), and other organic alkyl sulfonates.

[0130] Examples of photoacid generators include onium salt compounds, sulfonimide compounds, and disulfonyldiazomethane compounds.

[0131] Specific examples of onium salt compounds include, but are not limited to, iodonium salt compounds such as diphenyliodonium hexafluorophosphonate, diphenyliodonium trifluoromethanesulfonate, diphenyliodonium nonafluoron-butanesulfonate, diphenyliodonium perfluoron-octanesulfonate, diphenyliodonium camphorsulfonate, bis(4-tert-butylphenyl)iodonium camphorsulfonate, and bis(4-tert-butylphenyl)iodonium trifluoromethanesulfonate, as well as sulfonium salt compounds such as triphenylsulfonium nitrate, triphenylsulfonium hexafluoroantimonate, triphenylsulfonium nonafluoron-butanesulfonate, triphenylsulfonium camphorsulfonate, and triphenylsulfonium trifluoromethanesulfonate.

[0132] Specific examples of sulfonimide compounds include, but are not limited to, N-(trifluoromethanesulfonyloxy)succinimide, N-(nonafluoron-butanesulfonyloxy)succinimide, N-(camphorsulfonyloxy)succinimide, and N-(trifluoromethanesulfonyloxy)naphthalimide.

[0133] Specific examples of disulfonyl diazomethane compounds include, but are not limited to, bis(trifluoromethylsulfonyl)diazomethane, bis(cyclohexylsulfonyl)diazomethane, bis(phenylsulfonyl)diazomethane, bis(p-toluenesulfonyl)diazomethane, bis(2,4-dimethylbenzenesulfonyl)diazomethane, and methylsulfonyl-p-toluenesulfonyldiazomethane.

[0134] Specific examples of acids include, but are not limited to, aryl sulfonic acids and pyridinium salts such as p-toluenesulfonic acid, pyridinium p-toluenesulfonic acid (pyridinium p-toluenesulfonate), pyridinium trifluoromethanesulfonate, pyridinium phenolsulfonic acid, 5-sulfosalicylic acid, 4-phenolsulfonic acid, 4-chlorobenzenesulfonic acid, benzenedisulfonic acid, and 1-naphthalenesulfonic acid, as well as their salts; aryl carboxylic acids and their salts such as salicylic acid, benzoic acid, hydroxybenzoic acid, and naphthalenecarboxylic acid; linear or cyclic alkyl sulfonic acids and their salts such as trifluoromethanesulfonic acid and camphorsulfonic acid; and linear or cyclic alkyl carboxylic acids and their salts such as citric acid.

[0135] The amounts of acid generator and acid contained in the release agent composition cannot be specified in general terms, as they vary depending on the type of crosslinking agent used, the heating temperature when forming the film, etc., but are usually 0.01 to 5% by mass relative to the film components.

[0136] <<<Surfactants>>> The stripping agent composition may contain surfactants for purposes such as adjusting the liquid properties of the composition itself and the film properties of the resulting film, or for reproducibly preparing a highly uniform stripping agent composition. Surfactants can be used alone or in combination of two or more types. The amount of surfactant is usually 2% by mass or less relative to the film components of the stripping agent composition.

[0137] <<<Solvent>>> The release agent composition preferably contains a solvent. As such a solvent, for example, a highly polar solvent that can well dissolve the film components such as the aforementioned organic resins, polynuclear phenol derivatives, branched polysilanes, and crosslinking agents can be used, and if necessary, a low-polarity solvent may be used for the purpose of adjusting viscosity, surface tension, etc. In this invention, a low-polarity solvent is defined as one with a relative permittivity of less than 7 at a frequency of 100 kHz, and a highly polar solvent is defined as one with a relative permittivity of 7 or more at a frequency of 100 kHz. The solvent can be used alone or in combination of two or more types.

[0138] Examples of highly polar solvents include amide solvents such as N,N-dimethylformamide, N,N-dimethylacetamide, N,N-dimethylisobutylamide, N-methylpyrrolidone, and 1,3-dimethyl-2-imidazolidinone; ketone solvents such as ethyl methyl ketone, isophorone, and cyclohexanone; cyano solvents such as acetonitrile and 3-methoxypropionitrile; polyhydric alcohol solvents such as ethylene glycol, diethylene glycol, triethylene glycol, dipropylene glycol, 1,3-butanediol, and 2,3-butanediol; monohydric alcohol solvents other than aliphatic alcohols such as propylene glycol monomethyl ether, diethylene glycol monomethyl ether, diethylene glycol monophenyl ether, triethylene glycol monomethyl ether, dipropylene glycol monomethyl ether, benzyl alcohol, 2-phenoxyethanol, 2-benzyloxyethanol, 3-phenoxybenzyl alcohol, and tetrahydrofurfuryl alcohol; and sulfoxide solvents such as dimethyl sulfoxide.

[0139] Examples of low-polarity solvents include chlorine-based solvents such as chloroform and chlorobenzene; aromatic hydrocarbon solvents such as alkylbenzenes such as toluene, xylene, tetralin, cyclohexylbenzene, and decylbenzene; aliphatic alcohol solvents such as 1-octanol, 1-nonanol, and 1-decanol; ether-based solvents such as tetrahydrofuran, dioxane, anisole, 4-methoxytoluene, 3-phenoxytoluene, dibenzyl ether, diethylene glycol dimethyl ether, diethylene glycol butyl methyl ether, triethylene glycol dimethyl ether, and triethylene glycol butyl methyl ether; and ester-based solvents such as methyl benzoate, ethyl benzoate, butyl benzoate, isoamyl benzoate, bis(2-ethylhexyl) phthalate, dibutyl maleate, dibutyl oxalate, hexyl acetate, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, and diethylene glycol monobutyl ether acetate.

[0140] The solvent content is determined appropriately considering the viscosity of the desired composition, the coating method used, the thickness of the film to be produced, etc., but is 99% by mass or less of the total composition, preferably 70 to 99% by mass of the total composition, that is, the amount of film components in that case is 1 to 30% by mass of the total composition.

[0141] The viscosity and surface tension of the release agent composition are appropriately adjusted by changing the type of solvent used, their ratios, and the concentration of film components, taking into consideration various factors such as the application method used and the desired film thickness.

[0142] In one aspect of the present invention, the release agent composition contains a glycol-based solvent, from the viewpoint of obtaining a highly uniform composition with good reproducibility, a composition with good storage stability with good reproducibility, and a composition that provides a highly uniform film with good reproducibility. The term "glycol-based solvent" as used herein refers to a general term for glycols, glycol monoethers, glycol diethers, glycol monoesters, glycol diesters, and glycol ester ethers.

[0143] An example of a preferred glycol-based solvent is represented by formula (G).

[0144]

[0145] In formula (G), R Ｇ１ Each of these independently represents a linear or branched alkylene group having 2 to 4 carbon atoms, R Ｇ２ and R Ｇ３ Each of these independently represents a hydrogen atom, a linear or branched alkyl group having 1 to 8 carbon atoms, or an alkylacyl group in which the alkyl portion is a linear or branched alkyl group having 1 to 8 carbon atoms, n ｇ is an integer between 1 and 6.

[0146] Specific examples of linear or branched alkylene groups having 2 to 4 carbon atoms include, but are not limited to, ethylene groups, trimethylene groups, 1-methylethylene groups, tetramethylene groups, 2-methylpropane-1,3-diyl groups, pentamethylene groups, and hexamethylene groups. In particular, linear or branched alkylene groups having 2 to 3 carbon atoms are preferred, and linear or branched alkylene groups having 3 carbon atoms are more preferred, from the viewpoint of obtaining a highly uniform composition with good reproducibility, a composition with good storage stability with good reproducibility, and a composition that gives a highly uniform film with good reproducibility.

[0147] Specific examples of linear or branched alkyl groups having 1 to 8 carbon atoms include methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, s-butyl group, tert-butyl group, n-pentyl group, 1-methyl-n-butyl group, 2-methyl-n-butyl group, 3-methyl-n-butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl-n-propyl group, 2,2-dimethyl-n-propyl group, 1-ethyl-n-propyl group, n-hexyl group, 1-methyl-n-pentyl group, 2-methyl-n-pentyl group, and 3-methyl Examples of these groups include, but are not limited to, -n-pentyl group, 4-methyl-n-pentyl group, 1,1-dimethyl-n-butyl group, 1,2-dimethyl-n-butyl group, 1,3-dimethyl-n-butyl group, 2,2-dimethyl-n-butyl group, 2,3-dimethyl-n-butyl group, 3,3-dimethyl-n-butyl group, 1-ethyl-n-butyl group, 2-ethyl-n-butyl group, 1,1,2-trimethyl-n-propyl group, 1,2,2-trimethyl-n-propyl group, 1-ethyl-1-methyl-n-propyl group, and 1-ethyl-2-methyl-n-propyl group. In particular, methyl groups and ethyl groups are preferred, and methyl groups are more preferred, from the viewpoint of obtaining a highly homogeneous composition with good reproducibility, a composition with high storage stability with good reproducibility, and a composition that gives a highly homogeneous film with good reproducibility.

[0148] Specific examples of the alkyl acyl group in which the alkyl portion is a linear or branched alkyl group having 1 to 8 carbon atoms include the same examples as described above. Among these, from the viewpoint of obtaining a highly uniform composition with good reproducibility, a composition with good storage stability with good reproducibility, and a composition that gives a highly uniform film with good reproducibility, methyl carbonyl group and ethyl carbonyl group are preferred, and the methyl carbonyl group is more preferred.

[0149] n ｇ From the viewpoint of obtaining a highly uniform composition with good reproducibility, a composition with high storage stability with good reproducibility, and a composition that gives a highly uniform film with good reproducibility, the ratio is preferably 4 or less, more preferably 3 or less, even more preferably 2 or less, and most preferably 1.

[0150] From the viewpoint of obtaining a highly uniform composition with good reproducibility, a composition with high storage stability with good reproducibility, and a composition that gives a highly uniform film with good reproducibility, in formula (G), preferably, R Ｇ２ and R Ｇ３ At least one of them is a linear or branched alkyl group having 1 to 8 carbon atoms, more preferably R Ｇ２ and R Ｇ３ One of the members is a linear or branched alkyl group having 1 to 8 carbon atoms, and the other is an alkylacyl group in which the hydrogen atom or the alkyl portion is a linear or branched alkyl group having 1 to 8 carbon atoms.

[0151] From the viewpoint of obtaining a highly uniform composition with good reproducibility, a composition with good storage stability with good reproducibility, and a composition that provides a highly uniform film with good reproducibility, the content of the glycol-based solvent is preferably 50% by mass or more, more preferably 70% by mass or more, even more preferably 80% by mass or more, even more preferably 90% by mass or more, and even more preferably 95% by mass or more, relative to the solvent contained in the release agent composition. From the viewpoint of obtaining a highly uniform composition with good reproducibility, a composition with good storage stability with good reproducibility, and a composition that provides a highly uniform film with good reproducibility, the film components in the release agent composition are uniformly dispersed or dissolved in the solvent, preferably dissolved.

[0152] A release agent composition can be produced, for example, by mixing an organic resin or a polynuclear phenol derivative with a solvent and, if necessary, a crosslinking agent. The mixing order is not particularly limited, but examples of methods that can easily and reproducibly produce a release agent composition include, but are not limited to, a method in which the organic resin or polynuclear phenol derivative and the crosslinking agent are dissolved in the solvent at once, or a method in which a portion of the organic resin or polynuclear phenol derivative and the crosslinking agent are dissolved in the solvent, the remainder is dissolved separately in the solvent, and the resulting solutions are mixed. Furthermore, when preparing the release agent composition, heating may be appropriately applied, as long as the components do not decompose or deteriorate. In the present invention, for the purpose of removing foreign matter, the solvent or solution used may be filtered using a filter or the like during the production of the release agent composition or after all components have been mixed.

[0153] There are no particular limitations on the method for forming a release agent layer from a release agent composition, but one example is a method of forming a release agent layer by coating the release agent composition. There are no particular limitations on the method of coating the release agent composition, but it is usually a spin coating method. The heating temperature of the coated release agent composition cannot be specified in general terms as it varies depending on the type and amount of release agent components contained in the release agent composition, the desired thickness of the release agent layer, etc. However, from the viewpoint of reproducibly achieving a suitable release agent layer, it is 80°C to 300°C, and the heating time is usually appropriately determined in the range of 10 seconds to 10 minutes depending on the heating temperature. The heating temperature is preferably 100°C to 280°C, and more preferably 150°C to 250°C. The heating time is preferably 30 seconds to 8 minutes, and more preferably 1 minute to 5 minutes. Heating can be carried out using a hot plate, oven, etc.

[0154] The following describes an example of the structure of a laminate using diagrams. Figure 1 shows a schematic cross-sectional view of an example of a laminate. The laminate in Figure 1 has a compound semiconductor substrate 1, an adhesive layer 2, and a support substrate 4 in this order. That is, the adhesive layer 2 is provided between the compound semiconductor substrate 1 and the support substrate 4. The adhesive layer 2 is in contact with the compound semiconductor substrate 1 and the support substrate 4.

[0155] The following describes another example of the laminate configuration using figures. Figure 2 shows a schematic cross-sectional view of another example of the laminate. The laminate in Figure 2 has a compound semiconductor substrate 1, an adhesive layer 2, a release agent layer 3, and a support substrate 4 in this order. The adhesive layer 2 and the release agent layer 3 are provided between the compound semiconductor substrate 1 and the support substrate 4. The adhesive layer 2 is in contact with the compound semiconductor substrate 1. The release agent layer 3 is in contact with the adhesive layer 2 and the support substrate 4.

[0156] <<Example of a Method for Manufacturing a Laminate>> The method for manufacturing a laminate will be described below, using the laminate shown in Figure 1 as an example. An example of the laminate of the present invention can be manufactured by a method including the following steps 1A to 2A. Step 1A: A step of applying an adhesive composition onto a compound semiconductor substrate to form an adhesive coating layer. Step 2A: A step of heating the adhesive coating layer to form an adhesive layer.

[0157] The manufacturing method of the laminate will be described below, using the laminate shown in Figure 2 as an example. An example of the laminate of the present invention can be manufactured by a method including the following steps 1B to 3B. Step 1B: A step of applying an adhesive composition onto a compound semiconductor substrate to form an adhesive coating layer. Step 2B: A step of applying a release agent composition onto a support substrate to form a release agent layer. Step 3B: A step of heating the adhesive coating layer while the adhesive coating layer and the release agent layer are in contact, thereby forming the adhesive layer.

[0158] The method of applying the adhesive composition is not particularly limited, but is usually done by spin coating. Alternatively, a method can be adopted in which a coating film is formed separately by spin coating or the like to form a sheet-like coating film, and this sheet-like coating film is then applied as the adhesive coating layer. The heating temperature of the applied adhesive composition cannot be specified in general terms, as it varies depending on the type and amount of adhesive components contained in the adhesive composition, whether or not a solvent is included, the boiling point of the solvent used, and the desired thickness of the adhesive layer, but is usually 80 to 150°C, and the heating time is usually 30 seconds to 5 minutes. If the adhesive composition contains a solvent, the applied adhesive composition is usually heated. The thickness of the adhesive coating layer obtained by applying the adhesive composition and heating it if necessary is usually about 5 to 500 μm, and is ultimately determined appropriately so that it falls within the aforementioned range of adhesive layer thickness.

[0159] The method for applying the release agent composition is not particularly limited, but is usually a spin-coating method. The heating temperature of the applied release agent composition cannot be specified in general terms, as it varies depending on the type and amount of release agent components contained in the release agent composition, the desired thickness of the release agent layer, etc. However, from the viewpoint of reproducibly achieving a suitable release agent layer, it is 80°C to 300°C, and the heating time is usually appropriately determined in the range of 10 seconds to 10 minutes depending on the heating temperature. The heating temperature is preferably 100°C to 280°C, and more preferably 150°C to 250°C. The heating time is preferably 30 seconds to 8 minutes, and more preferably 1 minute to 5 minutes. Heating can be carried out using a hot plate, oven, etc.

[0160] In this invention, the laminate can be obtained by applying a load in the thickness direction to the compound semiconductor substrate and the support substrate while performing heat treatment, vacuum treatment, or both, and then performing post-heat treatment. The choice of which treatment conditions to adopt—heat treatment, vacuum treatment, or a combination of both—is determined appropriately after considering various factors such as the type of adhesive composition, film thickness, and desired adhesive strength.

[0161] The heat treatment is usually determined appropriately from a range of 20 to 160°C, from the viewpoint of removing the solvent from the composition. In particular, when the adhesive composition contains adhesive component (A), the heat is preferably 150°C or lower, more preferably 130°C or lower, from the viewpoint of suppressing or avoiding excessive hardening or unwanted deterioration of adhesive component (A). The heating time is appropriately determined depending on the heating temperature and the type of adhesive, but from the viewpoint of reliably achieving suitable adhesion, it is usually 30 seconds or more, preferably 1 minute or more, but from the viewpoint of suppressing deterioration of the adhesive layer and other members, it is usually 10 minutes or less, preferably 5 minutes or less.

[0162] The vacuum treatment can be performed by exposing the adhesive coating layers that are in contact with each other to a pressure of 10 to 10,000 Pa. The vacuum treatment time is usually 1 to 30 minutes.

[0163] The load in the thickness direction of the compound semiconductor substrate and the support substrate is not particularly limited as long as it does not adversely affect the compound semiconductor substrate, the support substrate and the layers between them, and can firmly adhere them together, but is usually in the range of 10 to 50,000 N.

[0164] The post-heating temperature is preferably 120°C or higher from the viewpoint of achieving a sufficient curing rate, and preferably 260°C or lower from the viewpoint of preventing deterioration of the substrate and each layer. The post-heating time is usually 1 minute or more, preferably 5 minutes or more, from the viewpoint of achieving suitable bonding of the substrate and layers constituting the laminate, and usually 180 minutes or less, preferably 120 minutes or less, from the viewpoint of suppressing or avoiding adverse effects on each layer due to excessive heating. Heating can be carried out using a hot plate, oven, etc. When post-heating using a hot plate, heating may be done with either the compound semiconductor substrate or the support substrate of the laminate facing downwards, but from the viewpoint of achieving suitable peeling with good reproducibility, it is preferable to post-heat with the compound semiconductor substrate facing downwards. One of the purposes of the post-heating treatment is to realize an adhesive layer that is a more suitable self-supporting film, and in particular to suitably achieve curing by hydrosilylation reaction.

[0165] Below, an example of a method for manufacturing the laminate shown in Figure 2 will be explained using Figures 3A to 3C. Figures 3A to 3C are diagrams illustrating one embodiment of the manufacturing of the laminate. First, a laminate is prepared in which an adhesive coating layer 2a is formed on a compound semiconductor substrate 1 (Figure 3A). This laminate can be obtained, for example, by applying an adhesive composition to the compound semiconductor substrate 1 and heating it. Separately, a laminate is prepared in which a release agent layer 3 is formed on a support substrate 4 (Figure 3B). This laminate can be obtained, for example, by applying a release agent composition to the support substrate 4 and heating it. Next, the laminate shown in Figure 3A and the laminate shown in Figure 3B are bonded together so that the adhesive coating layer 2a and the release agent layer 3 are in contact. Then, after applying a load in the thickness direction of the compound semiconductor substrate 1 and the support substrate 4 under reduced pressure, a heating device (not shown; hot plate) is placed on the side of the compound semiconductor substrate 1 opposite to the side where the adhesive coating layer 2a is in contact, and the adhesive coating layer 2a is heated by the heating device to harden and convert it into an adhesive layer 2 (Figure 3C). The laminate is obtained by the process shown in Figures 3A to 3C.

[0166] (Method for manufacturing a processed compound semiconductor substrate) By using the laminate according to the present invention, a method for manufacturing a processed compound semiconductor substrate can be provided. The method for manufacturing a processed compound semiconductor substrate according to the present invention includes the following steps: - A step of processing the compound semiconductor substrate of the laminate according to the present invention (processing step) - A step of separating the processed compound semiconductor substrate from the support substrate (separation step) Furthermore, the method for manufacturing a processed compound semiconductor substrate may also include the following step: - A step of cleaning the processed compound semiconductor substrate (cleaning step)

[0167] <Processing Steps> The processing applied to the compound semiconductor substrate in the processing steps includes, for example, processing on the side opposite the circuit surface of the compound semiconductor substrate, such as thinning the compound semiconductor substrate by polishing the back surface. Subsequently, for example, through-silicon electrodes (TSVs) are formed, and then the thinned compound semiconductor substrate is peeled off from the support substrate to form a laminate of compound semiconductor substrates for three-dimensional mounting. Alternatively, for example, back-side electrodes of the compound semiconductor substrate may be formed before or after these steps. During the thinning and TSV processes of the compound semiconductor substrate, heat of approximately 250 to 450°C is applied while it is bonded to the support substrate. The laminate of the present invention typically includes an adhesive layer and possesses heat resistance to this load. Note that the processing is not limited to the above, and also includes, for example, the implementation of a semiconductor component mounting process when the substrate is temporarily bonded to the support substrate to support the substrate for mounting semiconductor components.

[0168] <Separation Process> In the separation process, the method for separating (peeling) the compound semiconductor substrate and the support substrate is not particularly limited. For example, a method of mechanical peeling using equipment with a sharp part (a so-called debonder) can be used. Specifically, for example, the compound semiconductor substrate and the support substrate are separated after inserting the sharp part between them. Also, if the laminate has a release agent layer, the method for separating (peeling) the compound semiconductor substrate and the support substrate in the separation process may be peeling by irradiating the release agent layer with light and then tearing the compound semiconductor substrate and the support substrate apart. By irradiating the release agent layer with light from the support substrate side, the release agent layer is altered as described above (for example, separation or decomposition of the release agent layer), and then, for example, one of the substrates can be easily lifted up to separate the compound semiconductor substrate and the support substrate.

[0169] Irradiation of the release agent layer with light does not necessarily have to be performed over the entire area of ​​the release agent layer. Even if there is a mixture of irradiated and unirradiated areas, if the release ability of the release agent layer as a whole is sufficiently improved, the compound semiconductor substrate and the support substrate can be separated by a small external force, such as lifting the support substrate. The ratio and positional relationship of the irradiated and unirradiated areas will vary depending on the type and specific composition of the adhesive used, the thickness of the adhesive layer, the thickness of the release agent layer, the intensity of the irradiated light, etc. However, a person skilled in the art can set the conditions appropriately without requiring excessive testing. For these reasons, according to the manufacturing method of the processed compound semiconductor substrate of the present invention, for example, when the support substrate of the laminate used is light-transmitting, it is possible to shorten the light irradiation time when peeling by light irradiation from the support substrate side. As a result, not only is an improvement in throughput expected, but the compound semiconductor substrate and the support substrate can be easily and efficiently separated by light irradiation alone, avoiding physical stress for peeling. Typically, the amount of light irradiation for peeling is 50 to 3,000 mJ / cm². ２ The irradiation time is determined appropriately according to the wavelength and irradiation dose.

[0170] The wavelength of light used for peeling is preferably, for example, 250 to 600 nm, and more preferably 250 to 370 nm. More preferred wavelengths are 308 nm, 343 nm, 355 nm, 365 nm, or 532 nm. The amount of light required for peeling is an amount that can induce a suitable alteration, such as decomposition, of the specific compound and polymer. The light used for peeling may be laser light or non-laser light emitted from a light source such as an ultraviolet lamp.

[0171] <Cleaning Process> In the cleaning process, the substrates can be cleaned by spraying a cleaning agent composition onto at least one of the surfaces of the separated compound semiconductor substrate and the support substrate, or by immersing the separated compound semiconductor substrate or the support substrate in the cleaning agent composition. Alternatively, the surface of the processed compound semiconductor substrate may be cleaned using a removal tape or the like. Examples of cleaning agent compositions used for cleaning include the following:

[0172] Detergent compositions typically contain a solvent. Examples of solvents include lactones, ketones, polyhydric alcohols, compounds having ester bonds, derivatives of polyhydric alcohols, cyclic ethers, esters, and aromatic organic solvents. Examples of lactones include γ-butyrolactone. Examples of ketones include acetone, methyl ethyl ketone, cyclohexanone, methyl-n-pentyl ketone, methyl isopentyl ketone, and 2-heptanone. Examples of polyhydric alcohols include ethylene glycol, diethylene glycol, propylene glycol, and dipropylene glycol. Examples of compounds having ester bonds include ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, and dipropylene glycol monoacetate. Examples of derivatives of polyhydric alcohols include monoalkyl ethers such as monomethyl ether, monoethyl ether, monopropyl ether, and monobutyl ether, or compounds having ether bonds such as monophenyl ether, which are monomethyl ethers, monoethyl ether, monopropyl ether, and monobutyl ether of the above polyhydric alcohols or compounds having ester bonds. Among these, propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monomethyl ether (PGME) are preferred. Examples of cyclic ethers include dioxane. Examples of esters include methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, and ethyl ethoxypropionate. Examples of aromatic organic solvents include anisole, ethyl benzyl ether, cresyl methyl ether, diphenyl ether, dibenzyl ether, phenethole, butylphenyl ether, ethylbenzene, diethylbenzene, pentylbenzene, isopropylbenzene, toluene, xylene, cymene, and mesitylene. These can be used individually or in combination of two or more.Among these, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone, and ethyl lactate (EL) are preferred.

[0173] Furthermore, a mixed solvent obtained by mixing PGMEA and a polar solvent is also preferred. The mixing ratio (mass ratio) can be appropriately determined considering the compatibility of PGMEA and the polar solvent, but it is preferably in the range of 1:9 to 9:1, more preferably 2:8 to 8:2. For example, when EL is used as the polar solvent, the mass ratio of PGMEA:EL is preferably 1:9 to 9:1, more preferably 2:8 to 8:2. When PGME is used as the polar solvent, the mass ratio of PGMEA:PGME is preferably 1:9 to 9:1, more preferably 2:8 to 8:2, and even more preferably 3:7 to 7:3. When PGME and cyclohexanone are used as the polar solvent, the mass ratio of PGMEA:(PGME + cyclohexanone) is preferably 1:9 to 9:1, more preferably 2:8 to 8:2, and even more preferably 3:7 to 7:3.

[0174] The cleaning agent composition may or may not contain salt, but it is preferable that it does not contain salt in order to increase its versatility when processing compound semiconductor substrates using laminates and to reduce costs.

[0175] An example of a detergent composition containing a salt is a detergent composition containing a quaternary ammonium salt and a solvent. The quaternary ammonium salt is composed of a quaternary ammonium cation and an anion, and is not particularly limited as long as it is used for this type of application. Typical examples of such quaternary ammonium cations include tetra(hydrocarbon)ammonium cations. On the other hand, the anion that pairs with it is the hydroxide ion (OH) － ); fluoride ion (F － ), chloride ion (Cl － ), bromide ions (Br － ), iodide ion (I － ) and other halogen ions; tetrafluoroborate ions (BF４ － ); Hexafluorophosphate ion (PF ６ － Examples include, but are not limited to, these.

[0176] The quaternary ammonium salt is preferably a halogen-containing quaternary ammonium salt, and more preferably a fluorine-containing quaternary ammonium salt. In the quaternary ammonium salt, the halogen atom may be contained in the cation or in the anion, but is preferably contained in the anion.

[0177] In one preferred embodiment, the fluorine-containing quaternary ammonium salt is tetra(hydrocarbon)ammonium fluoride. Specific examples of hydrocarbon groups in tetra(hydrocarbon)ammonium fluoride include alkyl groups having 1 to 20 carbon atoms, alkenyl groups having 2 to 20 carbon atoms, alkynyl groups having 2 to 20 carbon atoms, and aryl groups having 6 to 20 carbon atoms. In a more preferred embodiment, tetra(hydrocarbon)ammonium fluoride includes tetraalkylammonium fluoride. Specific examples of tetraalkylammonium fluoride include, but are not limited to, tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, and tetrabutylammonium fluoride (also called tetrabutylammonium fluoride). Among these, tetrabutylammonium fluoride is preferred.

[0178] Quaternary ammonium salts such as tetraammonium fluoride may be used in hydrate form. Furthermore, quaternary ammonium salts such as tetraammonium fluoride may be used alone or in combination of two or more types. The amount of quaternary ammonium salt is not particularly limited as long as it dissolves in the solvent contained in the detergent composition, but is usually 0.1 to 30% by mass relative to the detergent composition.

[0179] When a detergent composition contains a salt, the solvent used in combination is not particularly limited as long as it is used for this type of application and dissolves salts such as quaternary ammonium salts. However, from the viewpoint of obtaining a detergent composition with excellent cleaning properties with good reproducibility, and from the viewpoint of dissolving salts such as quaternary ammonium salts well and obtaining a detergent composition with excellent uniformity, the detergent composition preferably contains one or more amide-based solvents.

[0180] A suitable example of an amide solvent is an acid amide derivative represented by formula (Z).

[0181] In the formula, R ０ R represents an ethyl group, a propyl group, or an isopropyl group, with ethyl and isopropyl groups preferred, and ethyl group more preferred. Ａ and R Ｂ Each of these independently represents an alkyl group having 1 to 4 carbon atoms. The alkyl group having 1 to 4 carbon atoms may be linear, branched, or cyclic, and specific examples include methyl, ethyl, propyl, isopropyl, cyclopropyl, n-butyl, isobutyl, s-butyl, t-butyl, and cyclobutyl groups. Of these, R Ａ and R Ｂ The groups are preferably methyl or ethyl, more preferably both are methyl or ethyl, and even more preferably both are methyl.

[0182] Examples of acid amide derivatives represented by formula (Z) include N,N-dimethylpropionamide, N,N-diethylpropionamide, N-ethyl-N-methylpropionamide, N,N-dimethylbutyrate amide, N,N-diethylbutyrate amide, N-ethyl-N-methylbutyrate amide, N,N-dimethylisobutyrate amide, N,N-diethylisobutyrate amide, and N-ethyl-N-methylisobutyrate amide. Of these, N,N-dimethylpropionamide and N,N-dimethylisobutylamide are particularly preferred, and N,N-dimethylpropionamide is more preferred.

[0183] The acid amide derivative represented by the formula (Z) may be synthesized by a substitution reaction between the corresponding carboxylic acid ester and an amine, or a commercially available product may be used.

[0184] Another example of a preferred amide solvent is a lactam compound represented by the formula (Y).

[0185] In the formula (Y), R １０１ represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, and R １０２ represents an alkylene group having 1 to 6 carbon atoms. Specific examples of the alkyl group having 1 to 6 carbon atoms include a methyl group, an ethyl group, an n-propyl group, an n-butyl group, etc., and specific examples of the alkylene group having 1 to 6 carbon atoms include a methylene group, an ethylene group, a trimethylene group, a tetramethylene group, a pentamethylene group, a hexamethylene group, etc., but are not limited thereto.

[0186] Specific examples of the lactam compound represented by the formula (Y) include an α-lactam compound, a β-lactam compound, a γ-lactam compound, a δ-lactam compound, etc., and these can be used alone or in combination of two or more.

[0187] In a preferred embodiment, the lactam compound represented by the formula (Y) includes N-alkyl-2-pyrrolidone (N-alkyl-γ-butyrolactam), and in a more preferred embodiment, it includes N-methylpyrrolidone (NMP) or N-ethylpyrrolidone (NEP), and in an even more preferred embodiment, it includes N-methylpyrrolidone (NMP).

[0188] The cleaning composition used in the present invention may contain water as a solvent, but usually only an organic solvent is intentionally used as the solvent from the viewpoint of avoiding corrosion of the substrate, etc. In this case, it is not to be denied that even the water of hydration of the salt or the trace amount of water contained in the organic solvent may be contained in the cleaning composition. The water content of the cleaning composition used in the present invention is usually 5% by mass or less.

[0189] The components and method elements relating to the above-described steps of the method for manufacturing a processed compound semiconductor substrate of the present invention may be modified in various ways, as long as they do not depart from the spirit of the present invention. The method for manufacturing a processed compound semiconductor substrate of the present invention may also include steps other than those described above.

[0190] One example of the delamination method of the present invention involves separating the compound semiconductor substrate and the support substrate of a laminate by irradiating the release agent layer with light from either the compound semiconductor substrate side or the support substrate side, when the compound semiconductor substrate or support substrate of the laminate is light-transmitting. In one example of the laminate of the present invention, the compound semiconductor substrate and the support substrate are temporarily bonded together in a suitably delaminating manner by an adhesive layer and a release agent layer. For example, if the support substrate is light-transmitting, the compound semiconductor substrate and the support substrate can be easily separated by irradiating the release agent layer with light from the support substrate side of the laminate. Typically, delamination is performed after processing has been carried out on the compound semiconductor substrate of the laminate.

[0191] An example of a method for manufacturing a processed compound semiconductor substrate will be explained using Figures 4A to 4E. This example is an example of manufacturing a thinned compound semiconductor substrate. First, a laminate is prepared (Figure 4A). This laminate is the same as the laminate shown in Figures 2 and 3C. Next, the compound semiconductor substrate 1 is thinned by polishing the surface opposite to the surface in contact with the adhesive layer 2 using a polishing device (not shown) (Figure 4B). The thinned compound semiconductor substrate 1 may also be subjected to the formation of through electrodes. Next, light L is irradiated onto the release agent layer 3 from the support substrate 4 side (Figure 4C). Next, the thinned compound semiconductor substrate 1 and the support substrate 4 are separated using a release device (not shown) (Figure 4D). This results in a thinned compound semiconductor substrate 1. At this point, residues of the adhesive layer 2 and the release agent layer 3 may remain on the thinned compound semiconductor substrate 1. Therefore, it is preferable to clean the thinned compound semiconductor substrate 1 using a cleaning agent composition to remove the residue of the adhesive layer 2 and the release agent layer 3 from the compound semiconductor substrate 1 (Figure 4E).

[0192] The present invention will be described in more detail below with reference to examples, but the present invention is not limited to the following examples. The apparatus used is as follows.

[0193] [Equipment] (1) Agitator: ARE-500, a rotary-orbit mixer manufactured by Thinky Co., Ltd. (2) Vacuum bonding device: XBS300, manufactured by Züss Microtech Co., Ltd. (3) Laser debonding device: Laser debonder, manufactured by Optopia Co., Ltd.

[0194] [1] Preparation of adhesive composition [Example 1] In a 600 mL stirring container for a stirrer, 148.3 g of vinyl group-containing linear polydimethylsiloxane (Wacker Chem Co., Ltd.) with a viscosity of 100 mPa·s as polyorganosiloxane (a1), 16.4 g of SiH group-containing linear polydimethylsiloxane (Wacker Chem Co., Ltd.) with a viscosity of 70 mPa·s as polyorganosiloxane (a2), 0.45 g of 1-ethynyl-1-cyclohexanol (Wacker Chem Co., Ltd.) and 0.45 g of 1,1-diphenyl-2-propyne-1-ol (Tokyo Chemical Industries Co., Ltd.) as polymerization inhibitors, 0.21 g of platinum catalyst (Wacker Chem Co., Ltd.) as a platinum group metal catalyst, and 17.2 g of p-menthane (Tokyo Chemical Industries Co., Ltd.) as a solvent were added and stirred with a stirrer for 5 minutes. Finally, the obtained mixture was filtered through a 300-mesh nylon filter to obtain adhesive composition 1. Note that the vinyl group-containing linear polydimethylsiloxane with a viscosity of 100 mPa·s and the SiH group-containing linear polydimethylsiloxane with a viscosity of 70 mPa·s do not contain Q units.

[0195] [Comparative Example 1] In a 600 mL stirring container for a stirrer, 1.92 g of MQ resin containing a polysiloxane skeleton and vinyl groups (manufactured by Wacker Chem, a polyorganosiloxane having Q units), 148.3 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chem) with a viscosity of 100 mPa·s as polyorganosiloxane (a1), and SiH group-containing linear polyorganosiloxane (a2) with a viscosity of 70 mPa·s 16.4 g of didimethylsiloxane (manufactured by Wacker Chem Co., Ltd.), 0.45 g of 1-ethynyl-1-cyclohexanol (manufactured by Wacker Chem Co., Ltd.) and 0.45 g of 1,1-diphenyl-2-propyne-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) as polymerization inhibitors, 0.21 g of platinum catalyst (manufactured by Wacker Chem Co., Ltd.) as a platinum group metal catalyst, and 17.2 g of p-menthane (manufactured by Tokyo Chemical Industry Co., Ltd.) as a solvent were added and stirred with a stirrer for 5 minutes. Finally, the resulting mixture was filtered through a 300 mesh nylon filter to obtain adhesive composition 2.

[0196] [Comparative Example 2] In a 600 mL stirring container for a stirrer, 9.60 g of MQ resin containing a polysiloxane skeleton and vinyl groups (manufactured by Wacker Chem, a polyorganosiloxane having Q units), 148.3 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chem) with a viscosity of 100 mPa·s as polyorganosiloxane (a1), and SiH group-containing linear polyorganosiloxane (a2) with a viscosity of 70 mPa·s 16.4 g of didimethylsiloxane (Wacker Chem Co., Ltd.), 0.45 g of 1-ethynyl-1-cyclohexanol (Wacker Chem Co., Ltd.) and 0.45 g of 1,1-diphenyl-2-propyne-1-ol (Tokyo Chemical Industries Co., Ltd.) as polymerization inhibitors, 0.21 g of platinum catalyst (Wacker Chem Co., Ltd.) as a platinum group metal catalyst, and 17.2 g of p-menthane (Tokyo Chemical Industries Co., Ltd.) as a solvent were added and stirred with a stirrer for 5 minutes. Finally, the resulting mixture was filtered through a 300 mesh nylon filter to obtain adhesive composition 3.

[0197] [Comparative Example 3] In a 600 mL stirring container for a stirrer, 19.2 g of MQ resin containing a polysiloxane skeleton and vinyl groups (manufactured by Wacker Chem, a polyorganosiloxane having Q units), 148.3 g of vinyl group-containing linear polydimethylsiloxane (manufactured by Wacker Chem) with a viscosity of 100 mPa·s as polyorganosiloxane (a1), and SiH group-containing linear polyorganosiloxane (a2) with a viscosity of 70 mPa·s 16.4 g of didimethylsiloxane (manufactured by Wacker Chem Co., Ltd.), 0.45 g of 1-ethynyl-1-cyclohexanol (manufactured by Wacker Chem Co., Ltd.) and 0.45 g of 1,1-diphenyl-2-propyne-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) as polymerization inhibitors, 0.21 g of platinum catalyst (manufactured by Wacker Chem Co., Ltd.) as a platinum group metal catalyst, and 17.2 g of p-menthane (manufactured by Tokyo Chemical Industry Co., Ltd.) as a solvent were added and stirred with a stirrer for 5 minutes. Finally, the resulting mixture was filtered through a 300 mesh nylon filter to obtain adhesive composition 4.

[0198] [2] Preparation of the release agent composition [Synthesis Example 1] 56.02 g of 1-phenylnaphthylamine, 50.00 g of 1-pyrenecarboxaldehyde (manufactured by Maruzen Chemical Industry Co., Ltd.), 6.67 g of 4-(trifluoromethyl)benzaldehyde, and 2.46 g of methanesulfonic acid were mixed with 86.36 g of 1,4-dioxane and 86.36 g of toluene, and the mixture was stirred under reflux under a nitrogen atmosphere for 18 hours. After the reaction was complete, the mixture was diluted with 96 g of tetrahydrofuran, and a precipitate was obtained by adding the diluted solution dropwise to methanol. The obtained precipitate was filtered, washed with methanol, and dried under reduced pressure at 60°C to obtain 72.12 g of novolac resin. The weight-average molecular weight measured in terms of standard polystyrene from GPC was 1100. 60 g of the obtained novolac resin was dissolved in 849 g of propylene glycol monomethyl ether acetate, and the mixture was filtered using a polyethylene microfilter with a pore size of 0.2 μm to prepare a release agent composition.

[0199] [3] Preparation of evaluation laminates The adhesive compositions obtained in Evaluation Example 1 and Comparative Examples 1 to 3 were spin-coated onto a 300 mm silicon substrate (thickness 775 μm) so that the final film thickness in the resulting laminate was approximately 30 μm, and heated at 120°C for 90 seconds to form an adhesive coating layer on the sample substrate, which is a semiconductor substrate. On the other hand, the release agent composition obtained in Synthesis Example 1 was spin-coated onto a 300 mm glass wafer (EAGLE-XG, Corning, thickness 700 μm) so that the final film thickness in the resulting laminate was approximately 200 nm, and heated at 250°C for 300 seconds to form a release agent coating layer on the glass wafer. For ease of availability, a silicon substrate was used as a substitute for a compound semiconductor substrate. Then, using a bonding device, the silicon substrate and the glass wafer were bonded together so that the release agent coating layer and the adhesive coating layer were sandwiched between them, and then the sample substrate (silicon substrate) was placed face down and subjected to a post-heat treatment on a hot plate at 200°C for 10 minutes to prepare the laminate. The lamination was performed at a temperature of 23°C and a reduced pressure of 1,500 Pa. The resulting laminate was then heat-treated at 400°C for 1 hour under a reduced pressure of 10 Pa. After the heat treatment, the laminate was observed through a glass substrate to check for the presence of bubbles caused by gas components generated by delamination or decomposition. A "○" was used if no delamination occurred, and a "×" if delamination occurred. The results are shown in Table 1. In addition, a 308 nm excimer laser beam with an energy of 150 mJ was irradiated onto the glass wafer perpendicularly using a laser debonder. After laser irradiation, the feasibility of delamination from the interface between the adhesive layer on the silicon substrate and the release agent layer on the glass wafer was checked. A "○" was used if delamination was easy, and a "×" was used if delamination was difficult. The results are shown in Table 1.

[0200]

[0201] 1 Compound semiconductor substrate 2 Adhesive layer 2a Adhesive coating layer 3 Release agent layer 4 Support substrate L Light

Claims

1. An adhesive composition used for forming the adhesive layer in a laminate having a compound semiconductor substrate that has been temporarily bonded to the compound semiconductor substrate during processing, the laminate comprising the compound semiconductor substrate, a support substrate, and an adhesive layer provided between the compound semiconductor substrate and the support substrate, wherein the adhesive composition contains a linear polyorganosiloxane having alkenyl groups with 2 to 40 carbon atoms bonded to silicon atoms, and a linear polyorganosiloxane having Si-H groups, and does not contain a polyorganosiloxane having Q units.

2. The adhesive composition according to claim 1, which does not contain polyorganosiloxane as a release agent component.

3. A laminate having a compound semiconductor substrate that has been temporarily bonded to the compound semiconductor substrate during processing, comprising the compound semiconductor substrate, a support substrate, and an adhesive layer provided between the compound semiconductor substrate and the support substrate, wherein the adhesive layer is an adhesive layer formed from the adhesive composition described in claim 1 or 2.

4. The laminate according to claim 3, further comprising a release agent layer provided between the compound semiconductor substrate and the support substrate.

5. The compound semiconductor in the compound semiconductor substrate is SiC, GaN, GaAs, Ga ２ O ３ The laminate according to claim 3, comprising at least one of the following: and AlGaAs.

6. A method for manufacturing a processed compound semiconductor substrate, comprising: a processing step of processing the compound semiconductor substrate of the laminate according to claim 3; and a separation step of separating the processed compound semiconductor substrate from the support substrate.

7. The method for manufacturing a processed compound semiconductor substrate according to claim 6, further comprising a cleaning step of cleaning the processed compound semiconductor substrate after the separation step.

Images