Light-emitting device and image display device

Abstract

A light-emitting device (1) according to one embodiment of the present disclosure comprises: a substrate (15) including a surface (15S); a light-emitting element (11) provided on the surface of the substrate and including a light emission surface (11S1) positioned on the side opposite from the substrate and a side surface (11S2) intersecting the light emission surface; an embedded layer (181) extending so as to cover the side surface of the light-emitting element and the surface of the substrate; a pad electrode (14) embedded in the substrate; and a transparent electrode (12) extending so as to cover the embedded layer and having a first contact part (12C1) in contact with the light emission surface, a second contact part (12C2) penetrating the embedded layer and in contact with the pad electrode, and an intermediate part (12K) connecting the first contact part and the second contact part. The intermediate part has a first inclined portion (12K1) forming a first angle (θ1) with respect to the light emission surface, and a second inclined portion (12K2) forming a second angle (θ2) with respect to the light emission surface, with the second angle being smaller than the first angle, and the second inclined portion is positioned between the first inclined portion and the second contact part.

Description

Light-emitting device and image display device

[0001] The present disclosure relates to a light-emitting device and an image display device including the light-emitting device.

[0002] For example, Patent Document 1 discloses a light-emitting device using a light-emitting element including a compound semiconductor in which a first conductive layer, a light-emitting layer, and a second conductive layer are laminated, and an inclined surface is formed around the compound semiconductor layer.

[0003] Japanese Patent Application Laid-Open No. 2020-88383

[0004] By the way, in a light-emitting device using a micro LED (Light Emitting Diode), improvement of light-emitting efficiency is desired.

[0005] A light-emitting device as an embodiment of the present disclosure includes a substrate including a surface, a light-emitting element provided on the surface of the substrate and including a light-emitting surface located on the opposite side of the substrate and a side surface intersecting the light-emitting surface, an embedded layer extending so as to cover the side surface of the light-emitting element and the surface of the substrate, a pad electrode embedded in the substrate, and a transparent electrode extending so as to cover the embedded layer and having a first contact portion in contact with the light-emitting surface, a second contact portion penetrating the embedded layer and contacting the pad electrode, and an intermediate portion connecting the first contact portion and the second contact portion. The intermediate portion has a first inclined portion forming a first angle with respect to the light-emitting surface and a second inclined portion forming a second angle smaller than the first angle with respect to the light-emitting surface, and the second inclined portion is located between the first inclined portion and the second contact portion.

[0006] A light-emitting device as one embodiment of the present disclosure includes a substrate including a surface, a light-emitting element provided on the surface of the substrate and including a light-emitting surface located on the opposite side of the substrate and a side surface intersecting the light-emitting surface, an embedded layer extending to cover the side surface of the light-emitting element and the surface of the substrate, a pad electrode embedded in the substrate, and a transparent electrode extending to cover the embedded layer and having a first contact portion in contact with the light-emitting surface, a second contact portion penetrating the embedded layer and in contact with the pad electrode, and an intermediate portion connecting the first contact portion and the second contact portion, wherein the embedded layer has a projection that protrudes in the direction of light emission at the outer edge of the light-emitting surface, and the transparent electrode has a projection covering portion provided to cover the projection, and the projection covering portion has an inner circumferential portion extending from the top of the projection covering portion toward the first contact portion and an outer circumferential portion extending from the top of the projection covering portion toward the second contact portion. In the path from the first contact portion through the apex to the second contact portion, the inner circumference has a third inclined portion that forms a third angle with respect to the light-emitting surface, and a fourth inclined portion that forms a fourth angle smaller than the third angle with respect to the light-emitting surface. The fourth inclined portion is located between the third inclined portion and the apex.

[0007] An image display device as one embodiment of the present disclosure is equipped with a light-emitting device, and the light-emitting device is the light-emitting device of the present disclosure described above.

[0008] In one embodiment of the present disclosure, the light-emitting device has a transparent electrode whose inclination with respect to the second contact portion becomes gentler as it approaches the second contact portion, making the transparent electrode less prone to breakage. This allows the distance between the light-emitting element and the second contact portion to be reduced, thereby increasing the density of light-emitting elements within the light-emitting device. Furthermore, the inner circumference of the projection covering portion of the transparent electrode inclins towards the outer circumference as it moves away from the first contact portion and approaches the top, widening the light-emitting surface and improving the light extraction efficiency. As a result, the luminous efficiency of the light-emitting device can be improved.

[0009] Figure 1 is a schematic cross-sectional view of a light-emitting device according to the first embodiment of the present disclosure. Figure 2 is a schematic cross-sectional view showing an enlarged view of the area around the light-emitting element shown in Figure 1. Figure 3 is a perspective view of the light-emitting element provided in the light-emitting device shown in Figure 1. Figure 4 is a schematic plan view of the light-emitting device shown in Figure 1. Figure 5A is a schematic cross-sectional view illustrating the manufacturing process of the light-emitting device shown in Figure 1. Figure 5B is a schematic cross-sectional view showing the process following Figure 5A. Figure 5C is a schematic cross-sectional view showing the process following Figure 5B. Figure 5D is a schematic cross-sectional view showing the process following Figure 5C. Figure 5E is a schematic cross-sectional view showing the process following Figure 5D. Figure 5F is a schematic cross-sectional view showing the process following Figure 5E. Figure 5G is a schematic cross-sectional view showing the process following Figure 5F. Figure 6 is a schematic plan view of a light-emitting device according to Modification 1-1 of the present disclosure. Figure 7 is a schematic cross-sectional view showing an enlarged view of the area around the light-emitting element of a light-emitting device according to Modification 1-2 of the present disclosure. Figure 8 is a schematic cross-sectional view showing an enlarged view of the area around the light-emitting element of a light-emitting device according to Modification 1-3 of the present disclosure. Figure 9 is an enlarged schematic cross-sectional view of the area around the light-emitting element of a light-emitting device according to a second embodiment of the present disclosure. Figure 10 is a schematic plan view of the light-emitting device shown in Figure 9. Figure 11A is a schematic cross-sectional view illustrating the manufacturing process of the light-emitting device shown in Figure 9. Figure 11B is a schematic cross-sectional view showing the process following Figure 11A. Figure 11C is a schematic cross-sectional view showing the process following Figure 11B. Figure 11D is a schematic cross-sectional view showing the process following Figure 11C. Figure 11E is a schematic cross-sectional view showing the process following Figure 11D. Figure 11F is a schematic cross-sectional view showing the process following Figure 11E. Figure 11G is a schematic cross-sectional view showing the process following Figure 11F. Figure 11H is a schematic cross-sectional view showing the process following Figure 11G. Figure 12 is an enlarged schematic cross-sectional view of the area around the light-emitting element of a light-emitting device according to Modification 2-1 of the present disclosure. Figure 13A is a schematic plan view showing the light-emitting element according to a third embodiment of the present disclosure. Figure 13B is a schematic cross-sectional view showing the light-emitting element shown in Figure 13A. Figure 13C is a schematic cross-sectional view showing an enlarged portion of the light-emitting element shown in Figure 13B. Figure 13D is a schematic cross-sectional view showing an enlarged portion of the light-emitting element shown in Figure 13C. Figure 14A is a schematic cross-sectional view illustrating the manufacturing process of the light-emitting element shown in Figure 13A. Figure 14B is a schematic cross-sectional view showing the process following Figure 14A. Figure 14C is a schematic cross-sectional view showing the process following Figure 14B.Figure 14D is a schematic cross-sectional view showing the process following Figure 14C. Figure 14E is a schematic cross-sectional view showing the process following Figure 14D. Figure 14F is a schematic cross-sectional view showing the process following Figure 14E. Figure 14G is a schematic cross-sectional view showing the process following Figure 14F. Figure 14H is a schematic cross-sectional view showing the process following Figure 14G. Figure 15A is a schematic cross-sectional view showing a light-emitting element according to Modification 3-1 of the present disclosure. Figure 15B is a schematic cross-sectional view showing a light-emitting element according to Modification 3-2 of the present disclosure. Figure 15C is a schematic cross-sectional view showing a light-emitting element according to Modification 3-3 of the present disclosure. Figure 15D is a schematic plan view showing a light-emitting element according to Modification 3-4 of the present disclosure. Figure 16 is a perspective view of an image display device according to Application Example 1 of the present disclosure. Figure 17 is a schematic diagram showing the wiring layout of the image display device shown in Figure 16. Figure 18 is a perspective view of an image display device according to Application Example 2 of the present disclosure. Figure 19 is a perspective view of the mounting substrate shown in Figure 18. Figure 20 is a perspective view of the unit substrate shown in Figure 19. Figure 21 is a diagram showing an example of an image display device according to Application Example 3 of the present disclosure. Figure 22A is a front view showing an example of the appearance of a digital still camera. Figure 22B is a rear view showing an example of the appearance of a digital still camera. Figure 23 is a perspective view showing an example of the appearance of a head-mounted display. Figure 24 is a perspective view showing an example of the appearance of a television device.

[0010] Hereinafter, one embodiment of the present disclosure will be described in detail with reference to the drawings. The following description is a specific example of the present disclosure, and the present disclosure is not limited to the following embodiments. Furthermore, the present disclosure is not limited to the arrangement, dimensions, dimensional ratios, etc. of each component shown in each figure. The order of description is as follows: 1. First Embodiment 1-1. Configuration of the Light-Emitting Device 1-2. Method of Manufacturing the Light-Emitting Device 1-3. Operation and Effects 2. Modifications of the First Embodiment 2-1. Modification 1-1 (Another Example of a Light-Emitting Device) 2-2. Modification 1-2 (Another Example of a Light-Emitting Device) 2-3. Modification 1-3 (Another Example of a Light-Emitting Device) 3. Second Embodiment 3-1. Configuration of the Light-Emitting Device 3-2. Method of Manufacturing the Light-Emitting Device 3-3. Operation and Effects 4. Modifications of the Second Embodiment 4-1. Modification 2-1 (Another Example of a Light-Emitting Device) 5. Third Embodiment 5-1. Configuration of the Light-Emitting Element 5-2. Method of Manufacturing the Light-Emitting Element 5-3. Function and Effects 6. Modifications of the Third Embodiment 6-1. Modification 3-1 (Another example of a light-emitting device) 6-2. Modification 3-2 (Another example of a light-emitting device) 6-3. Modification 3-3 (Another example of a light-emitting device) 6-4. Modification 3-4 (Another example of a light-emitting device) 7. Application Examples (Example of an image display device) 8. Application Examples (Example of an electronic device)

[0011] <1. First Embodiment> Figure 1 schematically shows a part of the cross-sectional configuration of the light-emitting device 1 according to the first embodiment of the present disclosure. Figure 2 is a magnified view of the area around the light-emitting element 11 shown in Figure 1. Figure 3 schematically shows the external appearance of the light-emitting section 10 of the light-emitting device 1 having the cross-sectional configuration shown in Figure 1. Figure 4 schematically shows a part of the planar configuration of the light-emitting device 1 according to one embodiment of the present disclosure. The light-emitting device 1 is suitably applicable to an image display device called a so-called LED display (for example, the image display device 100 shown in Figure 16 later).

[0012] [1-1. Configuration of Light-Emitting Device 1] As shown in Figure 1, the light-emitting device 1 has a stacked structure in which, for example, a drive unit 30, a light-emitting unit 10 including light-emitting elements 11, and a wavelength conversion unit 20 are stacked in order in the Z-axis direction, which is the thickness direction perpendicular to the XY plane. Also, as shown in Figure 4, the light-emitting elements 11 are arranged in a square along the XY plane, for example.

[0013] (Configuration of the light-emitting section 10) The light-emitting section 10 is provided with one or more light-emitting elements 11, one or more transparent electrodes 12, one or more plugs 13, one or more pad electrodes 14, one or more substrates 15, one or more insulating layers 16, one or more pad portions 17, one or more embedded layers 181, and one or more planarizing layers 182.

[0014] The light-emitting element 11 is provided for each pixel P, for example. That is, one light-emitting element 11 is provided for each pixel P. However, multiple light-emitting elements 11 may be provided for each pixel P. The light-emitting element 11 is a solid-state light-emitting element that emits light in a predetermined wavelength band from its upper surface, and is, for example, an LED (Light Emitting Diode) chip. An LED chip refers to an LED that has been cut from a wafer used for crystal growth, and is not a package type covered with molded resin or the like. The LED chip is, for example, 2 μm to 100 μm in size, and is what is called a microLED.

[0015] The light-emitting element 11 is provided on the surface 15S of the substrate 15 and includes a light-emitting surface 11S1 located on the opposite side of the substrate 15 and a side surface 11S2 intersecting the light-emitting surface 11S1. The light-emitting element 11 includes, for example, a first conductivity type layer 111, an active layer 112, and a second conductivity type layer 113 stacked in order from the drive unit 30 side. The light-emitting element 11 further includes a first electrode 114 on the side opposite to the active layer 112 when viewed from the first conductivity type layer 111. The light-emitting element 11 further includes a protective film 115 on the surface of the substrate 15 opposite to the drive unit 30 and on the side surface 11S2. An embedded member 116 is provided between the transparent electrode 12 and the protective film 115. The light-emitting surface 11S1 is the surface of the first conductivity type layer 111 opposite to the active layer 112.

[0016] The first conductivity layer 111 is formed of, for example, an n-type GaN-based semiconductor material. The active layer 112 has a multiple quantum well structure in which, for example, InGaN and GaN are alternately stacked, and has a light-emitting region within the layer. From the active layer 112, for example, light in the blue band from 430 nm to 500 nm is extracted. From the active layer 112, for example, light with a wavelength corresponding to the ultraviolet region (ultraviolet light) may also be extracted. The second conductivity layer 113 is formed of, for example, a p-type GaN-based semiconductor material. In the light-emitting element 11, the upper surface of the second conductivity layer 113, that is, the surface opposite to the active layer 112, is the light-emitting surface 11S1 of the light-emitting element 11.

[0017] The first electrode 114 is electrically connected to the plug 13. The first electrode 114 is in ohmic contact with, for example, the first conductive layer 111. The first electrode 114 includes, for example, a transparent conductive material such as a multilayer film of nickel (Ni) and gold (Au) (Ni / Au) or indium tin oxide (ITO).

[0018] The protective film 115 is provided so as to cover the outer periphery of the light-emitting surface 11S1 of the light-emitting element 11 and the side surface 11S2 of the light-emitting element 11. Furthermore, the protective film 115 extends along the surface opposite to the drive unit 30 when viewed from the substrate 15. The protective film 115 protects the surfaces of the light-emitting element 11 and the substrate 15 during the manufacturing process of the light-emitting device 1. The protective film 115 is made of, for example, aluminum oxide (Al ２ O ３ ) and others.

[0019] The embedded member 116 is provided to fill the space between the protective film 115 and the transparent electrode 12. The embedded member 116 includes, for example, silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), and titanium oxide (TiO).

[0020] The transparent electrode 12 has a first contact portion 12C1, a second contact portion 12C2, and an intermediate portion 12K. The transparent electrode 12 extends from the first contact portion 12C1 to the second contact portion 12C2 so as to cover the embedded layer 181. The first contact portion 12C1 is in contact with the light-emitting surface 11S1, and the second contact portion 12C2 penetrates the embedded layer 181 and is in contact with the pad electrode 14 embedded in the substrate 15. The first contact portion 12C1 is in ohmic contact with the light-emitting surface 11S1, and the second contact portion 12C2 is in ohmic contact with the pad electrode 14.

[0021] In a cross-section perpendicular to the light-emitting surface 11S1 and including the first contact portion 12C1 and the second contact portion 12C2, the intermediate portion 12K is the portion connecting the first contact portion 12C1 and the second contact portion 12C2. The intermediate portion 12K has a first inclined portion 12K1 that forms a first angle θ1 with respect to the light-emitting surface 11S1, and a second inclined portion 12K2 that forms a second angle θ2D2 smaller than the first angle θ1 with respect to the light-emitting surface 11S1. The second inclined portion 12K2 is located between the first inclined portion 12K1 and the second contact portion 12C2. In the light-emitting device 1 shown in Figures 2 and 3, the intermediate portion has two inclined portions, namely the first inclined portion 12K1 and the second inclined portion 12K2, but is not limited to this. For example, the intermediate portion 12K may have three or more inclined portions, or it may be a continuous curve. If the intermediate section 12K is a continuous curve, the angle between the tangent at the section 12KN closest to the second contact section 12C2 and the light-emitting surface 11S1 is smaller than the angle between the tangent at sections other than 12KN and the light-irradiating surface 11S.

[0022] In the transparent electrode 12, at the portion that contacts the side surface 11S2 of the light-emitting element 11 and the portion extending from the side surface 11S2 of the light-emitting element 11 to the second contact portion 12C2 via the embedded layer 181, the inclination of the transparent electrode 12 with respect to the second contact portion 12C2 becomes gentler as it approaches the second contact portion 12C2. The portion of the transparent electrode 12 that contacts the side surface 11S2 of the light-emitting element 11 and the portion extending from the side surface 11S2 of the light-emitting element 11 to the second contact portion 12C2 via the embedded layer 181 is the portion of the transparent electrode 12 that includes the first contact portion 12C1 and the second contact portion 12C2 in a cross section perpendicular to the light-emitting surface 11S1.

[0023] Furthermore, the transparent electrode 12 has a projection covering portion 12P that is provided to cover the projection portion 181P of the embedded layer 181. The projection covering portion 12P has an inner circumferential portion 12P1 that extends from the top portion 12T of the projection covering portion 12P toward the first contact portion 12C1 and an outer circumferential portion 12P2 that extends from the top portion of the projection covering portion 12P toward the second contact portion 12C2. In a cross-section of the inner circumferential portion 12P1 that includes the first contact portion and the second contact portion 12C2, the inner circumferential portion 12P1 is inclined toward the outer circumferential portion 12P2 as it moves away from the first contact portion 12C1 and approaches the top portion 12T.

[0024] The transparent electrode 12 is made of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO), and titanium oxide (TiO). ２ It includes one or more species selected from the group consisting of ).

[0025] The plug 13 is provided in contact with the first electrode 114 and electrically connects the light-emitting element 11 and the drive unit 30. The plug 13 includes, for example, copper (Cu), aluminum (Al), tungsten (W), silver (Ag), or alloys thereof.

[0026] The substrate 15 has a pad electrode 14 and a via 14V embedded in it. The pad electrode 14 electrically connects the light-emitting element 11 and the drive unit 30 via the via 14V. The pad electrode 14 and the via 14V each include, for example, copper (Cu), aluminum (Al), tungsten (W), silver (Ag), or alloys thereof.

[0027] The substrate 15 includes, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0028] On the drive unit 30 side of the substrate 15, an insulating layer 16 is provided to form a bonding surface with the drive unit 30, and a pad portion 17 is embedded in the insulating layer 16. The insulating layer 16 includes, for example, silicon oxide (SiO) or silicon nitride (SiN). The pad portion 17 includes, for example, copper (Cu).

[0029] The embedded layer 181 extends to cover the side surface 11S2 of the light-emitting element 11 and the surface of the substrate 15. As described above, since the transparent electrode 12 extends to cover the embedded layer 181, the embedded layer 181 is provided to fill the space between the protective film 115 and the transparent electrode 12. The embedded layer 181 also has a projection 181P that protrudes in the direction of light emission at the outer edge of the light-emitting surface 11S1. The embedded layer 181 includes, for example, silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), or titanium oxide (TiO).

[0030] The planarization layer 182 is provided so as to cover the transparent electrode 12. The planarization layer 182 planarizes the surface opposite to the drive unit 30 when viewed from the light-emitting unit 10. The planarization layer 182 includes, for example, silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), or titanium oxide (TiO).

[0031] (Configuration of the wavelength conversion unit 20) The wavelength conversion unit 20 is provided on the light emission surface 11S1 side of the light emission unit 10. The wavelength conversion unit 20 has a protective layer 21 provided on the upper surface of the planarization layer 182 of the light emission unit 10. On the protective layer 21, an on-chip lens layer 22 is further provided for each pixel P.

[0032] The protective layer 21 is for protecting the surface of the light-emitting device 1 and includes, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0033] The on-chip lens layer 22 is provided on the side opposite to the drive unit 30 when viewed from the light-emitting element 11. The on-chip lens layer 22 focuses or diverges the light emitted from the active layer 112 of one or more light-emitting elements 11. The on-chip lens layer 22 is made of a light-transmitting material and is composed of a single layer film made of one of the following: silicon oxide (SiO), silicon nitride (SiN), and silicon oxynitride (SiCN), or a laminated film made of two or more of these.

[0034] (Configuration of the drive unit 30) The drive unit 30 includes, for example, a support substrate 31 made of silicon (Si), an interlayer insulating layer 32 provided on the support substrate 31 and including a plurality of wiring layers (for example, wiring layers M1, M2, M3, M4, M5) and vias that electrically connect the wiring layers, and an insulating layer 33 that forms a bonding surface with the light-emitting unit 10 and a pad portion 34 embedded in the insulating layer 33. In the drive unit 30, a drive circuit 35 and a readout circuit 36 ​​are embedded in the support substrate 31.

[0035] The interlayer insulating layer 32 includes, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0036] The wiring layers M1, M2, M3, M4, M5 and the vias electrically connecting each wiring layer include, for example, copper (Cu), aluminum (Al), tungsten (W), silver (Ag), or alloys thereof. The insulating layer 33 includes, for example, silicon oxide (SiO) or silicon nitride (SiN). The pad portion includes, for example, copper (Cu).

[0037] [1-2. Method for Manufacturing the Light-Emitting Device 1] The light-emitting device 1 of this embodiment can be manufactured, for example, as follows. Figures 5A to 5G show an example of the manufacturing process for the light-emitting device 1.

[0038] First, as shown in Figure 5A, a sapphire substrate, for example, is used as the growth substrate 41, and the first conductivity layer 111, the active layer 112, and the second conductivity layer 113 are sequentially formed on the growth substrate 41 by epitaxial crystal growth using methods such as metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), thereby obtaining a laminated film 110.

[0039] Next, after peeling off the growth substrate 41, the laminated film 110 is inverted and bonded to the support substrate 42, as shown in Figure 5B, so that the second conductivity type layer 113 faces the support substrate 42. Next, the first electrode 114 is formed so as to be in contact with the upper surface of the first conductivity type layer 111. Subsequently, an embedded layer 43 is formed using silicon oxide or the like to cover the support substrate 42, the laminated film 110, and the first electrode 114. Through this operation, the laminated film 110 and the first electrode 114 are sealed by the embedded layer 43.

[0040] Next, a substrate 15 is formed with one or more plugs 13 and multiple pad electrodes 14 embedded in it, such that the plugs 13 align with the position where the first electrode 114 is exposed. Furthermore, an insulating layer 16 is formed on the substrate 15 with multiple pad portions 17 embedded in it. At this time, the multiple plugs 13 and multiple pad electrodes 14 are joined to each of the multiple pad portions 17. This results in a light-emitting section 10 including a laminated film 110, a substrate 15, an insulating layer 16, and an embedded layer 43.

[0041] Next, as shown in Figure 5C, the separately manufactured drive unit 30 is bonded to the upper surface of the light-emitting unit 10, that is, to the upper surface of the insulating layer 16 and the upper surface of the pad portion 17, thereby performing a so-called hybrid bond.

[0042] Next, after inverting the joined light-emitting unit 10 and driving unit 30 so that the driving unit 30 is at the bottom, the support substrate 42 is removed. Next, as shown in FIG. 5D, the stacked film 110 and the first electrode 114 are cut, for example, by reactive ion etching (RIE: Reactive Ion Etching) to form a mesa shape. Subsequently, an embedding member 116 is formed on the upper surface of the stacked film 110. Subsequently, a protective film 115 is formed along the side surface 11S2 of the stacked film 110, the upper and side surfaces 11S2 of the transparent electrode 12, and the upper surface of the substrate 15. By this operation, a light-emitting element 11 including a first conductive type layer 111, an active layer 112, a second conductive type layer 113, a first electrode 114, a protective film 115, and an embedding member 116 is obtained. Subsequently, an embedding layer 181 is formed so as to cover the protective film 115.

[0043] Next, as shown in FIG. 5E, the protective film 115, the embedding member 116, and the embedding layer 181 on the upper surface of the second conductive type layer 113 are removed, and a transparent electrode 12 is formed in contact with the exposed second conductive type layer 113. Further, a part of the protective film 115, the embedding layer 181, and the substrate 15 is removed to expose a part of the upper surface of the pad electrode^14. After that, a transparent electrode 12 is formed in contact with the second conductive type layer 113 and the exposed pad electrode 14.

[0044] Next, as shown in FIG. 5F, a planarization layer 182 is formed so as to cover the transparent electrode 12.

[0045] Next, as shown in FIG. 5G, a protective layer 21 is formed in order, for example, by a CVD method. After that, an on-chip lens layer 22 is bonded onto the protective layer 21. Thus, the light-emitting device 1 shown in FIG. 1 is completed.

[0046] [1-3. Operation and Effects] The light-emitting device 1 of this embodiment includes a substrate 15, a light-emitting element 11 provided on the substrate 15 and including a light-emitting surface 11S1, an embedded layer 181 covering the side surface 11S2 of the light-emitting element 11 and extending to the surface of the substrate, a pad electrode 14 embedded in the substrate, and a transparent electrode 12 having a first contact portion 12C1 in contact with the light-emitting surface 11S1 and a second contact portion 12C2 penetrating the embedded layer 181 and in contact with the pad electrode 14 in the substrate 15, and extending from the first contact portion 12C1 toward the second contact portion 12C2 so as to cover the embedded layer 181. In a cross section perpendicular to the light-emitting surface 11S1, the transparent electrode 12 includes the first contact portion 12C1 and the second contact portion 12C2, and the inclination of the transparent electrode 12 with respect to the second contact portion 12C2 becomes gentler as it approaches the second contact portion 12C2. The embedded layer 181 has a projection 181P that protrudes in the direction of light emission at the outer edge of the light emission surface 11S1, and the transparent electrode 12 has a projection covering portion 12P that covers the projection 181P, and the projection covering portion 12P has an inner circumferential portion 12P1 that extends from the top 12T of the projection covering portion 12P toward the first contact portion 12C1 and an outer circumferential portion 12P2 that extends from the top 12T of the projection covering portion 12P toward the second contact portion 12C2. In a cross-section perpendicular to the light emission surface 11S1, the inner circumferential portion 12P1 includes the first contact portion 12C1 and the second contact portion 12C2, and the transparent electrode 12 is inclined toward the outer circumferential portion 12P2 as it moves away from the first contact portion 11C1 and approaches the top 12T. This will be explained below.

[0047] To increase the luminous efficiency of the light-emitting device 1, it is advantageous to increase the installation density of light-emitting elements 11 within the light-emitting device 1. Increasing the installation density of light-emitting elements 11 makes the inclination of the side surface 11S2 of the light-emitting element 11 with respect to the substrate 15 steeper, making the transparent electrode 12 more prone to disconnection. The transparent electrode 12 covers the side of the light-emitting element 11 that emits light 11, and in the operating light-emitting element 11, current flows between the first contact portion 12C1 and the second contact portion 12C2. In the light-emitting device 1 of this embodiment, disconnection is suppressed in the transparent electrode 12 at the points where current flows, that is, at the points in the transparent electrode 12 that contact the side surface 11S2 of the light-emitting element 11 and the portion extending from the side surface 11S2 of the light-emitting element 11 to the second contact portion 12C2 via the embedded layer 181. In detail, in a cross-section perpendicular to the light-emitting surface 11S1, the transparent electrode 12 includes a first contact portion 12C1 and a second contact portion 12C2. By making the inclination of the transparent electrode 12 with respect to the second contact portion 12C2 gentler as it approaches the second contact portion 12C2, the occurrence of wire breakage of the transparent electrode 12 can be suppressed. As a result, the light-emitting device 1 can suppress the occurrence of wire breakage of the transparent electrode 12 and improve light emission efficiency, even when the installation density of multiple light-emitting elements 11 is high.

[0048] When an embedded layer 181 has a projection 181P on the outer edge of the light-emitting surface 11S1 of the light-emitting element 11, and a transparent electrode 12 has a projection covering portion 12P that covers the projection 181P of the embedded layer 181, the inner circumference 12P1 of the projection covering portion 12P is perpendicular to the light-emitting surface 11S1 so as to allow exposure of the light-emitting surface 11S1 and ensure high luminous efficiency. In the light-emitting device 1 of this embodiment, in the part of the transparent electrode 12 where current flows, that is, in a cross section perpendicular to the light-emitting surface 11S1, the inner circumference 12P1 of the transparent electrode 12, including the first contact portion 12C1 and the second contact portion 12C2, is inclined toward the outer circumference 12P2 as it moves away from the first contact portion 12C1 and approaches the top portion 12T. This suppresses disconnection of the transparent electrode 12 and increases luminous efficiency.

[0049] <2. Modifications of the First Embodiment> Next, several modifications of the first embodiment will be described. Note that the same reference numerals are used for the components corresponding to the light-emitting device 1 in the above embodiment, and their descriptions will be omitted.

[0050] [2-1. Modification 1-1] Figure 6 schematically shows a part of the planar configuration of a light-emitting device (light-emitting device 1A) according to Modification 1-1 of the present disclosure.

[0051] In the above embodiment of the light-emitting device 1, an example was shown in which the light-emitting elements 11 are arranged in a square in the XY plane, but this disclosure is not limited thereto. As shown in Figure 6, in the light-emitting device 1A of this modified example 1-1, the light-emitting elements 11 are arranged in a delta along the XY plane. Except for the above, the configuration of the light-emitting device 1A is substantially the same as the configuration of the light-emitting device 1 of the above embodiment. Even with this configuration, the light-emitting device 1A can obtain the same effects as the light-emitting device 1 of the above embodiment.

[0052] According to the light-emitting device 1A of this modified example 1-1, even if the cross-sectional configuration of the light-emitting device 1A is the same as that of the light-emitting device 1, the installation density of the light-emitting elements 11 can be increased.

[0053] [2-2. Modification 1-2] Figure 7 schematically shows an example of the cross-sectional configuration of a light-emitting device (light-emitting device 1B) according to Modification 1-2 of the present disclosure.

[0054] In the above embodiment of the light-emitting device 1, an example was shown in which, in a cross section perpendicular to the light-emitting surface 11S1 and including the first contact portion 12C1 and the second contact portion 12C2, the inner circumference portion 12P1 is inclined toward the outer circumference portion 12P2 as it moves away from the first contact portion 12C1 and approaches the top portion 12T. However, the present disclosure is not limited thereto. As shown in Figure 7, in the light-emitting device 1B of this modified example 1-2, in addition to the case of the light-emitting device 1, the inclination with respect to the light-emitting surface 11S1 is smaller in the portion 12P1N of the inner circumference portion 12P1 of the transparent electrode 12 closest to the top portion 12T and in its vicinity than in the portion of the inner circumference portion 12P1 of the transparent electrode 12 other than portion 12P1N. For example, in the path from the first contact portion 12C1 through the top portion 12T to the second contact portion 12C2, the inner circumference portion 12P1 has a third inclined portion 12P1K1 that forms a third angle θ3 with respect to the light emitting surface 11S1, and a fourth inclined portion 12PK2 that forms a fourth angle θ4 smaller than the third angle with respect to the light emitting surface 11S1. The fourth inclined portion 12P1K2 is located between the third inclined portion 12P1K1 and the top portion 12T. In the light-emitting device 1 shown in Figure 7, the inner circumference portion 12P1 has two inclined portions, namely the third inclined portion 12P1K1 and the fourth inclined portion 12P1K2, but is not limited to this. For example, the inner circumference portion 12P1 may have three or more inclined portions, or it may be a continuous curve. When the inner circumference 12P1 is a continuous curve, the angle between the tangent at the portion 12P1N closest to the apex 12T and the light-emitting surface 11S1 is smaller than the angle between the tangent at portions other than 12P1N and the light-irradiating surface 11S.

[0055] In a cross-section perpendicular to the light-emitting surface 11S1 and including both the first contact portion 12C1 and the second contact portion 12C2, the inclination of the inner circumference portion 12P1 of the transparent electrode 12 with respect to the light-emitting surface 11S1 decreases as it moves away from the first contact portion 12C1 and approaches the top portion 12T. That is, in a cross-section perpendicular to the light-emitting surface 11S1 and including both the first contact portion 12C1 and the second contact portion 12C2, the angle with respect to the light-emitting surface 11S1 decreases as it moves away from the first contact portion 12C1 and approaches the top portion 12T.

[0056] Except for the points mentioned above, the configuration of the light-emitting device 1B is substantially the same as the configuration of the light-emitting device 1 in the above embodiment. Even with this configuration, the light-emitting device 1B can obtain the same effects as the light-emitting device 1 in the above embodiment. Furthermore, with the light-emitting device 1B, compared to the light-emitting device 1, the breakage of the transparent electrode 12 can be made less likely, and the luminescence efficiency can be further increased.

[0057] [2-3. Modification 1-3] Figure 8 schematically shows an example of the cross-sectional configuration of a light-emitting device (light-emitting device 1C) according to Modification 1-3 of the present disclosure.

[0058] In the above embodiment of the light-emitting device 1, an example was shown in which the embedded layer 181 has a projection 181P that protrudes in the light emission direction along the entire outer circumference of the light emission surface 11S1, and the transparent electrode 12 has a projection covering portion 12P that covers the projection 181P. However, the disclosure is not limited thereto. As shown in Figure 8, in the light-emitting device 1C of this modified example 1-3, the inner circumference 12P1 of the transparent electrode 12 is absent in a cross-section perpendicular to the light emission surface 11S1 and including both the first contact portion 12C1 and the second contact portion 12C2.

[0059] Except for the points mentioned above, the configuration of the light-emitting device 1C is substantially the same as the configuration of the light-emitting device 1 in the above embodiment. Even with such a configuration, the light-emitting device 1C can obtain the same effects as the light-emitting device 1 in the above embodiment.

[0060] In the light-emitting device 1C, the transparent electrode 12 in a cross-section perpendicular to the light-emitting surface 11S1 and including the first contact portion 12C1 and the second contact portion 12C2 is the location where current flows between the first contact portion 12C1 and the second contact portion 12C2 during the operation of the light-emitting element 11. The fact that the inclination of the inner circumference portion 12P1 of the transparent electrode 12 is 180 degrees with respect to the first contact portion 12C1 in the aforementioned cross-section means that the embedded layer 181 does not have a protrusion 181P and the transparent electrode 12 does not have a protrusion covering portion 12P. Therefore, in the light-emitting device 1C of this modified example 1-3, the location of the transparent electrode 12 where current flows during the operation of the light-emitting element 11 does not have a protrusion covering portion 12P, thus suppressing the occurrence of wire breakage of the transparent electrode 12, and there is nothing covering the exposed surface of the light-emitting surface 11S1, thereby increasing the luminescence efficiency.

[0061] <3. Second Embodiment> Figure 9 schematically shows a part of the cross-sectional configuration of the light-emitting device 2 according to the second embodiment of the present disclosure, and corresponds to Figure 2 which represents the light-emitting device 1 of the first embodiment described above. Figure 10 schematically shows a part of the planar configuration of the light-emitting device 2. The light-emitting device 2, like the light-emitting device 1, is suitably applicable to an image display device called a so-called LED display (for example, the image display device 100 shown in Figure 16 later).

[0062] [3-1. Configuration of Light-Emitting Device 2] In the following description, components of the light-emitting device 2 that are substantially the same as those of the light-emitting device 1 in the first embodiment will be given the same reference numerals as those of the light-emitting device 1, and their descriptions will be omitted as appropriate.

[0063] As shown in Figures 9 and 10, the light-emitting device 2 comprises a substrate 15, a light-emitting element 11, an embedded layer 5, a pad electrode 14, and a transparent electrode 12. The substrate 15 includes a surface 15S. The pad electrode 14 is embedded in the substrate 15. The pad electrode 14 is connected to a pad portion 17 via vias 14V embedded in the substrate 15. The light-emitting element 11 is provided on the surface 15S of the substrate 15 and includes a light-emitting surface 11S1 located on the opposite side of the substrate 15 and a side surface 11S2 intersecting the light-emitting surface 11S1. The embedded layer 5 extends to cover the side surface 11S2 of the light-emitting element 11 and the surface 15S of the substrate 15. The embedded layer 5 has a base portion 50, a first opening edge portion 51, and a second opening edge portion 52. The transparent electrode 12 has a first contact portion 12C1, a second contact portion 12C2, and an intermediate portion 12K. The first contact portion 12C1 extends to cover the embedded layer 5 and is provided to be in contact with the light-emitting surface 11S1. The second contact portion 12C2 penetrates the embedded layer 5 and is provided to be in contact with the pad electrode 14. The intermediate portion 12K covers the embedded layer 5 so as to connect the first contact portion 12C1 and the second contact portion 12C2 and is provided along the side surface 11S2.

[0064] The substrate 15 includes an opening 15K provided directly above the pad electrode 14. In the example shown in Figure 9, the position of the opening 15K is also directly above the via 14V. The embedded layer 5 has a first opening edge 51 that includes an opening 51K communicating with the opening 15K. As shown in Figure 10, both the opening 15K and the opening 51K have, for example, a substantially rectangular planar shape. As shown in Figure 10, the first opening edge 51 is provided in an annular shape along the outer edge of the opening 51K. The constituent material of the substrate 15 and the constituent material of the first opening edge 51 are different. The constituent material of the first opening edge 51 may have an etching rate different from that of the substrate 15. For example, if the constituent material of the substrate 15 is silicon oxide (SiO), the constituent material of the first opening edge 51 may be silicon nitride (SiN). Alternatively, an organic insulating material or a metal oxide may be used as the constituent material of the first opening edge 51. Furthermore, opening 15K is a specific example corresponding to the "first opening" in one aspect of this disclosure, and opening 51K is a specific example corresponding to the "second opening" in one aspect of this disclosure.

[0065] The substrate 15 has a first bevel 15F that forms the opening edge of the opening 15K. The first opening edge portion 51 has a second bevel 51F that forms the opening edge of the opening 51K. The second contact portion 12C2 continuously covers the upper surface of the pad electrode 14, the first bevel 15F, and the second bevel 51F. The first bevel 15F forms an angle θ15 with respect to the surface 15S of the substrate 15, and the second bevel 51F forms an angle θ51 with respect to the surface 15S of the substrate 15. The angles θ15 and θ51 may be the same or different. If they are different, the angle θ15 may be greater than the angle θ51, or the angle θ51 may be greater than the angle θ15.

[0066] The embedded layer 5 further includes a second opening edge 52 that covers the outer edge portion of the light-emitting surface 11S1. That is, the second opening edge 52 has an opening 52K that exposes a part of the light-emitting surface 11S1. The outer edge portion of the light-emitting surface 11S1 refers to the region of the light-emitting surface 11S1 other than the region in contact with the first contact portion 12C1. The second opening edge 52 is provided in an annular shape, for example, as shown in Figure 10. The second opening edge 52 has a laminated structure including a first film 521 and a second film 522 that are sequentially laminated on the light-emitting surface 11S1. However, in the example shown in Figure 9, a protective film 115 is inserted between the first film 521 and the second film 522. The constituent materials of the first film 521 and the second film 522 are different. The constituent material of the first film 521 only needs to have an etching rate different from that of the second film 522. The constituent material of the second film 522 may be, for example, silicon nitride (SiN) if the constituent material of the first film 521 is silicon oxide (SiO). Alternatively, organic insulating materials or metal oxides may be used as the constituent materials for the first film 521 and the second film 522.

[0067] The first film 521 has a first inclined surface 521F that forms the lower part of the opening edge of the opening 52K. The second film 522 has a second inclined surface 522F that forms the upper part of the opening edge of the opening 52K. The first contact portion 12C1 continuously covers the light-emitting surface 11S1, the first inclined surface 521F, and the second inclined surface 522F. The angle that the first inclined surface 521F makes with the light-emitting surface 11S1 and the angle that the second inclined surface 522F makes with the light-emitting surface 11S1 may be the same or different. If they are different, the angle that the first inclined surface 521F makes with the light-emitting surface 11S1 may be greater than the angle that the second inclined surface 522F makes with the light-emitting surface 11S1, or vice versa.

[0068] [3-2. Method for Manufacturing the Light-Emitting Device 2] The light-emitting device 2 of this embodiment can be manufactured, for example, as follows. Figures 11A to 11H show an example of the manufacturing process for the light-emitting device 2.

[0069] First, in the same manner as the light-emitting device 1 of the first embodiment described above, an insulating layer 16 in which the pad portion 17 is embedded, a substrate 15 on which the pad electrode 14 and via 14V are formed, and a light-emitting element 11 are formed in order, as shown in Figure 11A. However, the first film 521 is formed between the second conductive layer 113 and the protective film 115.

[0070] Next, as shown in Figure 11B, an embedded film Z50 is formed to cover the protective film 115 of the light-emitting element 11. A portion of the embedded film Z50 will ultimately become the first opening edge 51 and the second film 522, respectively. Therefore, an embedded film Z5 is formed using the materials that will constitute the first opening edge 51 and the second film 522, respectively.

[0071] Next, as shown in Figure 11C, a resist mask RM1 is formed that selectively covers the portion of the embedded film Z5 corresponding to the area where the openings 15K, 51K and the first opening edge 51 are to be formed, and the portion corresponding to the area where the opening 52K and the second opening edge 52 are to be formed.

[0072] Next, the portions of the embedded film Z5 that are not covered by the resist mask RM1 are selectively removed, for example, by dry etching, to form the embedded film Z51 and the embedded film Z52, respectively, as shown in Figure 11D.

[0073] Next, as shown in Figure 11E, an embedded film Z50 is formed to continuously cover the protective film 115 exposed by dry etching, and the embedded films Z51 and Z52.

[0074] Next, as shown in Figure 11F, a resist mask RM2 is formed that selectively covers the portion of the embedded film Z50 that does not correspond to the regions of embedded film Z51 and embedded film Z52, respectively.

[0075] Next, the embedded film Z50 in the regions corresponding to the embedded film Z51 and embedded film Z52 is selectively removed by dry etching or the like to form the base 50 as shown in Figure 11G.

[0076] Next, as shown in Figure 11H, a resist mask RM3 is formed that selectively covers the areas excluding the areas where openings 51K and 15K are to be formed and the area where opening 52K is to be formed. After that, openings 51K and 15K and opening 52K are formed by selective etching using the resist mask RM3.

[0077] Next, after removing the resist mask RM3, the light-emitting device 2 can be manufactured by sequentially forming the transparent electrode 12 and the planarization layer 182, similar to the light-emitting device 1.

[0078] [3-3. Function and Effects] In the light-emitting device 2 of this embodiment, a first opening edge 51 made of a different material from the constituent material of the substrate 15 is provided directly above the pad electrode 14. Therefore, a first inclined surface 15F and a second inclined surface 51F having appropriate angles θ15 and θ51, respectively, can be formed so as to prevent the transparent electrode 12, which is provided to cover the pad electrode 14, from breaking. Furthermore, in the light-emitting device 2, a second opening edge 52 having a laminated structure including a first film 521 and a second film 522 made of different constituent materials is provided directly above the light-emitting surface 11S1. Therefore, a first inclined surface 521F and a second inclined surface 522F having appropriate angles, respectively, can be formed so as to prevent the transparent electrode 12, which is provided to cover the light-emitting surface 11S1, from breaking. Consequently, the occurrence of wire breakage of the transparent electrode 12 can also be suppressed in the light-emitting device 2. As a result, the light-emitting device 2 can suppress the occurrence of disconnections in the transparent electrode 12 and improve light-emitting efficiency, even when the installation density of multiple light-emitting elements 11 is high.

[0079] In particular, the light-emitting device 2 is provided with a first opening edge 51 and a second opening edge 52 in the embedded layer 5, corresponding to the connection points between the pad electrode 14 and the transparent electrode 12, and the connection points between the light-emitting surface 11S1 and the transparent electrode 12, respectively. This makes it possible to shorten the in-plane distance between the first contact portion 12C1 and the second contact portion 12C2 compared to the light-emitting device 1. Therefore, it is advantageous for further high integration of multiple light-emitting elements 11.

[0080] <4. Modifications of the Second Embodiment> Next, several modifications of the second embodiment will be described. Note that the same reference numerals are used for the components corresponding to the light-emitting device 2 in the second embodiment, and their descriptions will be omitted.

[0081] [4-1. Modification 2-1] Figure 12 schematically shows a part of the cross-sectional configuration of a light-emitting device (light-emitting device 2A) according to Modification 2-1 of the present disclosure.

[0082] The angle θ51 of the second inclined surface 51F may be partially different. For example, as in the light-emitting device 2A shown in Figure 2, in a cross-section including the first contact portion 12C1 and the second contact portion 12C2, the second inclined surface 51F located between the first contact portion 12C1 and the second contact portion 12C2 may be gentler, i.e., have a smaller angle θ51, than the second inclined surface 51F located on the opposite side of the second contact portion 12C2 when viewed from the first contact portion 12C1. Similarly, in the light-emitting device 2A, the angle of the second inclined surface 522F of the second film 522 may also be partially different. For example, the second inclined surface 522F located between the first contact portion 12C1 and the second contact portion 12C2 may be gentler, i.e., have a smaller angle with respect to the light-emitting surface 11S1, than the second inclined surface 522F located on the opposite side of the first contact portion 12C1 when viewed from the second contact portion 12C2. The same applies to the angle of the first inclined surface 521F of the first film 521 with respect to the light-emitting surface 11S1, and the angle may be partially different.

[0083] [4-2. Modification 2-2] In the light-emitting device 2 of the second embodiment described above, the embedded layer 5 has both a first opening edge 51 and a second opening edge 52, but the light-emitting device of this disclosure may have only one of them.

[0084] <5. Third Embodiment> Figures 13A and 13B schematically represent the planar configuration of the light-emitting element 60 according to the third embodiment of the present disclosure. Figure 13B schematically represents the cross-sectional configuration of the light-emitting element 60. Figure 13B shows the cross-sectional configuration in the direction of the arrow along the line XIIIB-XIIIB shown in Figure 13A. Figure 13C is an enlarged cross-sectional view of the region XIIIIC shown by the dashed line in Figure 13B. Furthermore, Figure 13D is an enlarged cross-sectional view of the region XIIID shown by the dashed line in Figure 13C. The light-emitting element 60 is applicable to the light-emitting device 1 of the first embodiment and the light-emitting device 2 of the second embodiment, etc. That is, the light-emitting element 60 can be used in place of the light-emitting element 11 in each of the light-emitting devices 1, 1A to 1C described as the first embodiment and its modified form, and the light-emitting devices 2, 2A described as the second embodiment and its modified form.

[0085] [5-1. Configuration of the Light-Emitting Device 60] The light-emitting device 60 has a plurality of light-emitting parts 61 arranged in the X-axis direction and the Y-axis direction, respectively (Figures 13A, 13B). As shown in Figures 13B to 13D, each of the plurality of light-emitting parts 61 is sandwiched between one lower electrode 63 and one upper electrode 62 in the Z-axis direction. That is, one lower electrode 63 and one upper electrode 62 are provided in common for the plurality of light-emitting parts 61. Each of the plurality of light-emitting parts 61 includes a first conductivity type layer 611, an active layer 612, and a second conductivity type layer 613 that are stacked sequentially from the lower electrode 63 toward the upper electrode 62 in the Z-axis direction. Also, each of the plurality of light-emitting parts 61 has a substantially square shape in plan view (Figure 13A).

[0086] The first conductivity layer 611 is formed of, for example, an n-type GaN-based semiconductor material. The active layer 612 has a multiple quantum well structure (MQW) in which well layers 612A and barrier layers 612B are alternately stacked in the Z-axis direction, as shown in Figure 13D. Therefore, the light-emitting element 60 has a structure in which multiple multiple quantum well structures (MQW) are arranged in the X-axis direction. The well layer 612A includes, for example, InGaN or InGaAsP, and the barrier layer 612B includes, for example, GaN or GaAsP. The band gap energy of the barrier layer 612B is greater than the band gap energy of the well layer 612A. Light in the blue band, for example, between 430 nm and 500 nm, is extracted from the active layer 612. Light with wavelengths corresponding to the ultraviolet region (ultraviolet light) may also be extracted from the active layer 612. The second conductivity layer 613 is formed of, for example, a p-type GaN-based semiconductor material. In the light-emitting section 61, the upper surface of the second conductive layer 613, that is, the surface opposite to the active layer 612, is the light-emitting surface 61S1 of the light-emitting section 61.

[0087] Furthermore, in the light-emitting element 60, multiple isolation layers 64 are provided between multiple light-emitting sections 61, each containing an active layer 612 having a multiple quantum well structure. Therefore, in the light-emitting element 60, the end faces of the well layer 612A and the end faces of the barrier layer 612B are covered by the isolation layers 64. Each of the multiple isolation layers 64 is preferably made of a semiconductor material having a band gap energy equal to or greater than that of the barrier layer 612B, such as GaN or AlGaN. This is because an improvement in the quantum confinement effect can be expected.

[0088] Furthermore, in the light-emitting section 60, it is preferable that the positions of both end faces of the well layer 612A and the end faces of the barrier layer 612B substantially coincide in the X-axis direction (Figures 13C and 13D). Therefore, as shown in Figure 13C, both the well layer 612A and the barrier layer 612B have substantially the same width W in the X-axis direction. Here, "substantially coincidental" and "substantially identical" mean a concept that allows for unavoidable variations due to manufacturing errors, measurement errors, etc., in addition to cases of complete coincidence and complete identicalness. The width W is preferably 20 nm or less. In the examples shown in Figures 13A to 13D, the portion of the first conductivity type layer 611 connected to the active layer 612 and its vicinity, and the second conductivity type layer 613 also each have a width W. Furthermore, in the light-emitting section 60, it is preferable that the positions of both end faces of the well layer 612A and the end faces of the barrier layer 612B substantially coincide in the Y-axis direction as well.

[0089] The upper electrode 62 is made of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO), and titanium oxide (TiO). ２ It is preferable that the material be composed of a transparent conductive material containing one or more selected from the group consisting of ).

[0090] The lower electrode 63 is electrically connected to a plug 13 (see Figure 2) in, for example, a light-emitting device 1. The lower electrode 63 is in ohmic contact with, for example, the first conductive layer 611. The lower electrode 63 may contain, for example, a transparent conductive material such as a multilayer film of nickel (Ni) and gold (Au) (Ni / Au) or indium tin oxide (ITO).

[0091] [5-2. Method for Manufacturing the Light-Emitting Device 60] The light-emitting device 60 of this embodiment can be manufactured, for example, as follows. Figures 14A to 14H show an example of the manufacturing process for the light-emitting device 60.

[0092] First, as shown in Figure 14A, a first conductivity layer 611, an active layer 612, a second conductivity layer 613, an electrode layer 62Z1, and an insulating layer 65 are sequentially laminated on the lower electrode 63. Next, a mask pattern MP1 having multiple fine openings MP1K is formed on the insulating layer 65. The mask pattern MP1 can be formed by annealing a polymer resin such as polymethyl methacrylate using, for example, DSA (Directed Self-Assembly) technology, so as to cover the entire insulating layer 65, and then developing the annealed polymer resin. Here, multiple openings MP1K are formed at each of the positions where multiple light-emitting parts 61 should be formed.

[0093] Next, as shown in Figure 14B, the insulating layer 65 is selectively removed by dry etching using the mask pattern MP1, thereby forming multiple openings 65K at positions corresponding to each of the multiple openings MP1K.

[0094] Next, as shown in Figure 14C, each of the multiple openings 65K is filled with a high-melting-point metal such as Ta (tantalum) or W (tungsten). This forms multiple pillars 66 at the respective positions where multiple light-emitting parts 61 should be formed.

[0095] Next, after removing the insulating layer 65, dry etching is performed using each of the multiple pillars 66 as a mask, as shown in Figure 14D. Specifically, the first conductivity layer 611, active layer 612, second conductivity layer 613, and electrode layer 62Z1 in the areas not covered by each of the multiple pillars 66 are selectively removed. Through these operations, multiple pillar-shaped light-emitting parts 61 are obtained.

[0096] Next, as shown in Figure 14E, a semiconductor layer 64Z is formed to fill the periphery of the multiple light-emitting units 61 and to cover the electrode layer 62Z1 stacked on the upper surface of the multiple light-emitting units 61. A portion of the semiconductor layer 64Z will later become the isolation layer 64.

[0097] Next, as shown in Figure 14F, a hard mask 67 made of SiN, Ni (nickel), or the like is formed to selectively cover the semiconductor layer 64Z. The hard mask 67 is formed in the region where a single light-emitting element 60, including multiple light-emitting parts 61, is to be formed. After that, the semiconductor layer 64Z and the first conductivity type layer 611 are selectively removed by dry etching using the hard mask 67 to form the outer edge of the light-emitting element 60.

[0098] Next, after removing the hard mask 67, the surface of the remaining semiconductor layer 64Z covering the multiple light-emitting parts 61 is polished to expose the upper surface of the electrode layer 62Z1 as shown in Figure 14G. Furthermore, an insulating layer 68 is formed to fill the periphery of the first conductivity type layer 611 and the periphery of the semiconductor layer 64Z.

[0099] Finally, as shown in Figure 14H, an electrode layer 62Z2 is formed. The electrode layer 62Z2 is formed so as to be in contact with the electrode layer 62Z1 provided on each of the multiple light-emitting parts 61. This gives rise to the upper electrode 62, and the light-emitting element 60 of this embodiment is completed.

[0100] [5-3. Operation and Effects] As described above, the light-emitting element 60 of this embodiment is equipped with a plurality of light-emitting sections 61 separated by a separation layer 64 in the X-axis direction and the Y-axis direction, respectively, and each of the plurality of light-emitting sections 61 includes an active layer 612 having a multiple quantum well structure. That is, the light-emitting element 60 of this embodiment performs quantum confinement three-dimensionally in the Z-axis direction, the X-axis direction, and the Y-axis direction. Therefore, a high quantum confinement effect is achieved in each of the plurality of light-emitting sections 61 in the light-emitting element 60. Thus, a high luminescence efficiency can be obtained with the light-emitting element 60.

[0101] <6. Modifications of the Third Embodiment> Next, several modifications of the third embodiment will be described. Note that components corresponding to the light-emitting element 60 of the second embodiment are denoted by the same reference numerals and their descriptions are omitted.

[0102] Figures 15A to 15C schematically show a part of the cross-sectional configuration of the light-emitting elements (light-emitting elements 60A to 60C) according to modified examples 3-1 to 3-3 of this disclosure. Figure 15D schematically shows a part of the planar configuration of the light-emitting element (light-emitting element 60D) according to modified example 3-4 of this disclosure.

[0103] In the light-emitting element 60 of the third embodiment described above, the active layer 612, a part of the first conductivity type layer 611, the second conductivity type layer 613, and a part of the upper electrode 62 all have the same width W, but the present disclosure is not limited to such a configuration. For example, as in the light-emitting element 60A of modified example 3-1 shown in Figure 15A, the first conductivity type layer 611 does not have a constricted portion, and the upper surface of the first conductivity type layer 611, i.e., the surface facing the active layer 612, may be a flat surface. Also, as in the light-emitting element 60B of modified example 3-2 shown in Figure 15B, for example, neither the first conductivity type layer 611 nor the upper electrode 62 has a constricted portion, and the surfaces of the first conductivity type layer 611 and the upper electrode 62 facing the active layer 612 may be flat surfaces.

[0104] Furthermore, as shown in the modified example 3-3 of Figure 15C, a portion of the second conductive layer 613 may be embedded in a portion of the upper electrode 62, as in the light-emitting element 60C.

[0105] Furthermore, although the third embodiment described above illustrates a case where the light-emitting element 60 is substantially square in plan view, the disclosure is not limited thereto. For example, as shown in the modified example 3-4 of Figure 15D, the light-emitting element 60D may be provided with a plurality of light-emitting parts 61A, each of which is substantially rectangular in shape with the Y-axis direction as its longitudinal direction in plan view.

[0106] <7. Application Examples> (Application Example 1) Figure 16 is a perspective view showing an example of the schematic configuration of an image display device (image display device 100). The image display device 100 is a so-called LED display, and the light-emitting device of this disclosure (for example, light-emitting device 1) is used as the display pixel. The image display device 100 includes a display panel 120 and a control circuit 140 that drives the display panel 120, as shown in Figure 9, for example.

[0107] The display panel 120 consists of a mounting substrate 120A and an opposing substrate 120B superimposed on each other. The surface of the opposing substrate 120B serves as the image display surface, with a display area (display section 100A) in the center and a non-display area, the frame section 100B, surrounding it.

[0108] Figure 17 shows an example of the wiring layout of the area corresponding to the display unit 100A on the surface of the mounting substrate 120A on the opposing substrate 120B side. On the surface of the mounting substrate 120A, in the area corresponding to the display unit 100A, a plurality of data wirings 134 are formed extending in a predetermined direction and arranged in parallel at a predetermined pitch, as shown in Figure 10, for example. On the surface of the mounting substrate 120A, in the area corresponding to the display unit 100A, a plurality of scan wirings 135 are formed extending in a direction intersecting (for example, orthogonal) with the data wirings 134 and arranged in parallel at a predetermined pitch. The data wirings 134 and scan wirings 135 are made of a conductive material such as Cu.

[0109] The scan wiring 135 is formed, for example, on the outermost layer, and is formed on an insulating layer (not shown) formed on the surface of the substrate. The substrate of the mounting board 120A is made of, for example, a silicon substrate or a resin substrate, and the insulating layer on the substrate is made of, for example, SiN, SiO, aluminum oxide (AlO), or a resin material. On the other hand, the data wiring 134 is formed in a layer different from the outermost layer containing the scan wiring 135 (for example, a layer below the outermost layer), and is formed, for example, in an insulating layer on the substrate.

[0110] The vicinity of the intersection of the data wiring 134 and the scan wiring 135 is a display pixel 136, and multiple display pixels 136 are arranged in a matrix within the display unit 100A. Each display pixel 136 is equipped with, for example, the respective color pixels Pr, Pg, and Pb of the light-emitting device 1.

[0111] The light-emitting device 1 is provided with terminal electrodes, for example, one pair for each color pixel Pr, Pg, and Pb, or one common electrode and the other arranged for each color pixel Pr, Pg, and Pb. One terminal electrode is electrically connectable to the data wiring 134, and the other terminal electrode is electrically connectable to the scan wiring 135. For example, one terminal electrode is electrically connectable to the pad electrode 134B at the tip of a branch 134A provided on the data wiring 134. Also, for example, the other terminal electrode is electrically connectable to the pad electrode 135B at the tip of a branch 135A provided on the scan wiring 135.

[0112] Each pad electrode 134B, 135B is formed, for example, on the outermost layer and is provided in the area where each light-emitting device 1 is mounted, as shown in Figure 17. Here, the pad electrodes 134B, 135B are made of a conductive material such as Au (gold).

[0113] The mounting substrate 120A is further provided with a plurality of support columns (not shown) that, for example, regulate the distance between the mounting substrate 120A and the opposing substrate 120B. The support columns may be provided in the area facing the display unit 100A, or in the area facing the frame unit 100B.

[0114] The opposing substrate 120B is made of, for example, a glass substrate or a resin substrate. On the opposing substrate 120B, the surface on the side facing the light-emitting device 1 may be flat, but it is preferable that it be rough. The rough surface may be provided over the entire area facing the display unit 100A, or it may be provided only in the area facing the display pixels 136. The rough surface has fine irregularities that allow light emitted from the color pixels Pr, Pg, and Pb to enter the rough surface. The irregularities of the rough surface can be created, for example, by sandblasting or dry etching.

[0115] The control circuit 140 drives each display pixel 136 (each light-emitting device 1) based on the video signal. The control circuit 140 is composed of, for example, a data driver that drives data wiring 134 connected to the display pixel 136, and a scan driver that drives scan wiring 135 connected to the display pixel 136. The control circuit 140 may be provided separately from the display panel 120 and connected to the mounting board 120A via wiring, or it may be mounted on the mounting board 120A, as shown in Figure 16.

[0116] (Application Example 2) Figure 18 is a perspective view showing another configuration example (image display device 200) of an image display device using the light-emitting device of this disclosure (for example, light-emitting device 1). The image display device 200 is a so-called tiling display that uses a plurality of light-emitting devices with LEDs as light sources. The image display device 200 includes, for example, a display panel 220 and a control circuit 240 that drives the display panel 220, as shown in Figure 18.

[0117] The display panel 220 consists of a mounting substrate 220A and an opposing substrate 220B superimposed on each other. The surface of the opposing substrate 220B serves as the image display surface, with a display area in the center and a frame area surrounding it, which is a non-display area (neither of which is shown). The opposing substrate 220B is positioned opposite the mounting substrate 220A, for example, with a predetermined gap between them. The opposing substrate 220B may also be in contact with the upper surface of the mounting substrate 220A.

[0118] Figure 19 schematically shows an example of the configuration of the mounting board 220A. The mounting board 220A is composed of multiple unit boards 250 arranged in a tile-like pattern, as shown in Figure 19. Although Figure 19 shows an example in which the mounting board 220A is composed of nine unit boards 250, the number of unit boards 250 may be 10 or more, or 8 or less.

[0119] Figure 20 shows an example of the configuration of a unit board 250. The unit board 250 has, for example, a plurality of light-emitting devices 1 arranged in a tile-like pattern, and a support board 260 that supports each light-emitting device 1. Each unit board 250 further has a control board (not shown). The support board 260 is made of, for example, a metal frame (metal plate) or a wiring board. If the support board 260 is made of a wiring board, it can also serve as the control board. In this case, at least one of the support board 260 and the control board is provided so as to be electrically connectable to each light-emitting device 1.

[0120] (Application Example 3) Figure 21 shows the appearance of the transparent display 300. The transparent display 300 includes, for example, a display unit 310, an operation unit 311, and a housing 312. The display unit 310 uses the light-emitting device of this disclosure (for example, light-emitting device 1). This transparent display 300 is capable of displaying images and text information while allowing the background of the display unit 310 to pass through.

[0121] In the transparent display 300, the mounting substrate is a light-transmitting substrate. Each electrode provided on the light-emitting device 1 is formed using a conductive material that is light-transmitting, similar to the mounting substrate. Alternatively, each electrode is designed to be difficult to see by reducing the width of the wiring or the thickness of the wiring. Furthermore, the transparent display 300 can display black by, for example, layering a liquid crystal layer equipped with a driving circuit, and switching between transmission and black display is possible by controlling the light distribution direction of the liquid crystal.

[0122] <8. Application Examples> An image display device (e.g., image display device 100) using the light-emitting device of this disclosure (e.g., light-emitting device 1) described above may be provided in various electronic devices. It is particularly preferable that it be provided in devices that require high resolution and are used with magnification close to the eyes, such as the electronic viewfinder of a video camera or SLR camera, or a head-mounted display.

[0123] (Specific Example 1) Figure 22A is a front view showing an example of the external appearance of the digital still camera 340. Figure 22B is a rear view showing an example of the external appearance of the digital still camera 340. This digital still camera 340 is a single-lens reflex type with interchangeable lenses, and has an interchangeable shooting lens unit (interchangeable lens) 342 located approximately in the center of the front of the camera body 341, and a grip portion 343 for the photographer to hold on the left side of the front.

[0124] A monitor 344 is located slightly to the left of the center of the back of the camera body 341. An electronic viewfinder (eyepiece) 345 is provided above the monitor 344. The photographer can determine the composition by looking through the electronic viewfinder 345 and viewing the light image of the subject guided by the shooting lens unit 342. The electronic viewfinder 345 includes, for example, an image display device 100.

[0125] (Specific Example 2) Figure 23 is a perspective view showing an example of the appearance of a head-mounted display 320. The head-mounted display 320 has, for example, a glasses-shaped display unit 321 and ear hooks 322 on both sides for being attached to the user's head. The display unit 321 includes, for example, an image display device 100.

[0126] (Specific Example 2) Figure 24 is a perspective view showing an example of the appearance of a television device 330. This television device 330 has, for example, a video display screen section 331 including a front panel 332 and a filter glass 333, and this video display screen section 331 includes an image display device (for example, an image display device 100) using a light-emitting device (for example, light-emitting device 1) of the present disclosure.

[0127] Although the present technology has been described above with reference to several embodiments, modifications, and application examples, the present technology is not limited to the above embodiments, and various modifications are possible. For example, in the above embodiments, examples were shown in which the light emitted from the light-emitting element 11 is blue light or ultraviolet light, but the technology is not limited to these. For example, the light-emitting device 1 can also use a light-emitting element that emits two or more types of light, such as blue light and green light, or ultraviolet light and green light.

[0128] Furthermore, although the above embodiments and modifications have described the individual components constituting the light-emitting device 1, etc., it is not necessary to include all components, and other components may also be included.

[0129] Furthermore, while the above embodiments illustrate the case in which a light-emitting element is provided in a drive unit having a drive circuit, this disclosure is not limited thereto. For example, a light-emitting element may be provided on another substrate that does not have a drive circuit, and the drive circuit included in a separate drive unit from the other substrate may be connected to the light-emitting element.

[0130] Furthermore, the effects described herein are merely examples and are not limited to those described; other effects may also occur.

[0131] This technology can also be configured as follows. With this configuration, the inclination of the transparent electrode 12 with respect to the second contact portion 12C2 becomes gentler as it approaches the second contact portion 12C2, making the transparent electrode 12 less prone to breakage. This allows the distance between the light-emitting element 11 and the second contact portion 12C2 to be reduced, thereby increasing the density of light-emitting elements in the light-emitting device 1. Furthermore, the inner circumference 12P1 of the projection covering portion 12P of the transparent electrode 12 inclins towards the outer circumference 12P2 as it moves away from the first contact portion 12C1 and approaches the top. This widens the light-emitting surface 11S1, increasing the light extraction efficiency, and as a result, the luminous efficiency of the light-emitting device can be improved. (1) A light-emitting device comprising: a substrate including a surface; a light-emitting element provided on the surface of the substrate and including a light-emitting surface located on the opposite side of the substrate and a side surface intersecting the light-emitting surface; an embedded layer extending to cover the side surface of the light-emitting element and the surface of the substrate; a pad electrode embedded in the substrate; and a transparent electrode extending to cover the embedded layer and having a first contact portion in contact with the light-emitting surface, a second contact portion penetrating the embedded layer and in contact with the pad electrode, and an intermediate portion connecting the first contact portion and the second contact portion, wherein the intermediate portion has a first inclined portion making a first angle with respect to the light-emitting surface and a second inclined portion making a second angle smaller than the first angle with respect to the light-emitting surface, and the second inclined portion is located between the first inclined portion and the second contact portion. (2) The light-emitting device according to (1), wherein in a cross section perpendicular to the light-emitting surface and including the first contact portion and the second contact portion, the angle of the intermediate portion with respect to the light-emitting surface decreases as it moves from the first contact portion toward the second contact portion. (3) The light-emitting device according to (1), wherein the embedded layer has a projection that protrudes in the direction of light emission at the outer edge of the light-emitting surface, and the transparent electrode has a projection covering portion provided to cover the projection.(4) The light-emitting device according to (3), wherein the projection covering portion has an inner circumferential portion extending from the top of the projection covering portion toward the first contact portion and an outer circumferential portion extending from the top of the projection covering portion toward the second contact portion, and the inner circumferential portion is inclined toward the outer circumferential portion as it moves away from the first contact portion and approaches the top portion. (5) The light-emitting device according to (2), wherein the embedded layer has a projection that protrudes in the direction of light emission at the outer edge of the light emission surface, and the transparent electrode is provided so as to cover the projection. (6) The light-emitting device according to (5), wherein the projection covering portion has an inner circumferential portion extending from the top of the projection covering portion toward the first contact portion and an outer circumferential portion extending from the top of the projection covering portion toward the second contact portion, and in a cross section perpendicular to the light emission surface, the transparent electrode includes the first contact portion and the second contact portion, and the inner circumferential portion is inclined toward the outer circumferential portion as it moves away from the first contact portion and approaches the top portion. (7) The light-emitting device according to (6), wherein in the path from the first contact portion through the top portion to the second contact portion, the inner circumference portion has a third inclined portion that forms a third angle with respect to the light-emitting surface and a fourth inclined portion that forms a fourth angle smaller than the third angle with respect to the light-emitting surface, and the fourth inclined portion is located between the third inclined portion and the top portion. (8) The light-emitting device according to (6), wherein in a cross section perpendicular to the light-emitting surface and including the first contact portion and the second contact portion, the inclination of the inner circumference portion of the transparent electrode decreases in angle with respect to the light-emitting surface as it moves away from the first contact portion and approaches the top portion. (9) The light-emitting device according to (6), wherein in a cross section perpendicular to the light-emitting surface and including the first contact portion and the second contact portion, the inclination of the inner circumference portion of the transparent electrode is 180 degrees with respect to the first contact portion. (10) The light-emitting device according to any one of (1) to (9), wherein the light-emitting element is arranged in a square along a plane parallel to the light-emitting surface. (11) The light-emitting device according to any one of (1) to (10), wherein the light-emitting element is arranged in a delta along a plane parallel to the light-emitting surface.(12) The transparent electrode is made of indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO), and titanium oxide (TiO). ２A light-emitting device according to any one of (1) to (11) above, comprising one or more selected from the group consisting of ). (13) A substrate including a surface; a light-emitting element provided on the surface of the substrate and including a light-emitting surface located on the opposite side from the surface and a side surface intersecting the light-emitting surface; an embedded layer extending to cover the side surface of the light-emitting element and the surface of the substrate; a pad electrode embedded in the substrate; and a transparent electrode extending to cover the embedded layer and having a first contact portion in contact with the light-emitting surface, a second contact portion penetrating the embedded layer and in contact with the pad electrode, and an intermediate portion connecting the first contact portion and the second contact portion, wherein the embedded layer has a projection that protrudes in the direction of light emission at the outer edge of the light-emitting surface, the transparent electrode has a projection covering portion provided to cover the projection, the projection covering portion has an inner circumferential portion extending from the top of the projection covering portion toward the first contact portion and an outer circumferential portion extending from the top of the projection covering portion toward the second contact portion. (14) The light-emitting device according to (13), wherein in a cross section perpendicular to the light-emitting surface, the transparent electrode includes the first contact portion and the second contact portion, and the inclination of the inner circumference of the transparent electrode is less than the third angle with respect to the light-emitting surface, and the fourth inclination is located between the third inclination and the top portion.(16) A light-emitting device comprising: a substrate including a surface; a light-emitting element provided on the surface of the substrate and including a light-emitting surface located on the opposite side of the substrate and a side surface intersecting the light-emitting surface; an embedded layer extending to cover the side surface of the light-emitting element and the surface of the substrate; a pad electrode embedded in the substrate; and a transparent electrode extending to cover the embedded layer and having a first contact portion in contact with the light-emitting surface, a second contact portion penetrating the embedded layer and in contact with the pad electrode, and an intermediate portion connecting the first contact portion and the second contact portion, wherein the substrate includes a first opening provided directly above the pad electrode, and the embedded layer has a first opening edge portion including a second opening communicating with the first opening, and the constituent material of the substrate and the constituent material of the first opening edge portion are different. (17) The light-emitting device according to (16) above, wherein the etching rate of the constituent material of the substrate and the etching rate of the constituent material of the first opening edge portion are different. (18) The light-emitting device according to (16) or (17), wherein the substrate has a first bevel that constitutes the opening edge of the first opening, the first opening edge has a second bevel that constitutes the opening edge of the second opening, and the second contact portion covers the pad electrode, the first bevel, and the second bevel. (19) The light-emitting device according to (18), wherein the first bevel forms a first angle (θ15) with respect to the surface of the substrate, and the second bevel forms a second angle (θ51) with respect to the surface of the substrate. (20) The light-emitting device according to any one of (16) to (19), wherein the embedded layer includes a second opening edge that covers the outer edge of the light-emitting surface, and the second opening edge includes a first film and a second film sequentially laminated on the light-emitting surface, wherein the constituent materials of the first film and the constituent materials of the second film are different. (21) The light-emitting device according to (20) wherein the etching rate of the constituent material of the first film and the etching rate of the constituent material of the second film are different. (22) The light-emitting device according to any one of (1) to (21) above, wherein the light-emitting element has a plurality of multiple quantum well structures (MQW) in which well layers and barrier layers are alternately stacked in a first direction, and the plurality of multiple quantum well structures are spaced apart from each other in a second direction perpendicular to the first direction.(23) The light-emitting device according to (22), wherein a separation layer having a band gap energy equal to or greater than the band gap energy of the barrier layer is present between the plurality of multiple quantum well structures. (24) The light-emitting device according to (22) or (23), wherein in the second direction, the positions of both end faces of the well layer and the positions of both end faces of the barrier layer substantially coincide. (25) An image display device comprising a light-emitting device, the light-emitting device comprising: a substrate including a surface; a light-emitting element provided on the surface of the substrate and including a light-emitting surface located on the opposite side from the surface and a side surface intersecting the light-emitting surface; an embedded layer extending to cover the side surface of the light-emitting element and the surface of the substrate; a pad electrode embedded in the substrate; and a transparent electrode extending to cover the embedded layer and having a first contact portion in contact with the light-emitting surface, a second contact portion penetrating the embedded layer and in contact with the pad electrode, and an intermediate portion connecting the first contact portion and the second contact portion, wherein the intermediate portion has a first inclined portion making a first angle with respect to the light-emitting surface and a second inclined portion making a second angle smaller than the first angle with respect to the light-emitting surface, and the second inclined portion is located between the first inclined portion and the second contact portion.(26) A light-emitting device comprising: a substrate including a surface; a light-emitting element provided on the surface of the substrate and including a light-emitting surface located on the opposite side of the surface and a side surface intersecting the light-emitting surface; an embedded layer extending to cover the side surface of the light-emitting element and the surface of the substrate; a pad electrode embedded in the substrate; and a transparent electrode extending to cover the embedded layer and having a first contact portion in contact with the light-emitting surface, a second contact portion penetrating the embedded layer and in contact with the pad electrode, and an intermediate portion connecting the first contact portion and the second contact portion, wherein the embedded layer has a projection protruding in the direction of light emission at the outer edge of the light-emitting surface, the transparent electrode has a projection covering portion provided to cover the projection, the projection covering portion has an inner circumferential portion extending from the top of the projection covering portion toward the first contact portion and an outer circumferential portion extending from the top of the projection covering portion toward the second contact portion. In the path from the first contact portion through the top portion to the second contact portion, the inner circumference portion has a third inclined portion that forms a third angle with respect to the light emitting surface and a fourth inclined portion that forms a fourth angle smaller than the third angle with respect to the light emitting surface, the fourth inclined portion being located between the third inclined portion and the top portion.

[0132] This application claims priority based on Japanese Patent Application No. 2025-024759, filed with the Japan Patent Office on 19 February 2025, and all contents of that application are incorporated herein by reference.

[0133] Those skilled in the art will understand that various modifications, combinations, subcombinations, and changes can be conceived depending on design requirements and other factors, and that these fall within the scope of the attached claims and their equivalents.

Claims

1. A light-emitting device comprising: a substrate including a surface; a light-emitting element provided on the surface of the substrate and including a light-emitting surface located on the opposite side of the substrate and a side surface intersecting the light-emitting surface; an embedded layer extending to cover the side surface of the light-emitting element and the surface of the substrate; a pad electrode embedded in the substrate; and a transparent electrode extending to cover the embedded layer and having a first contact portion in contact with the light-emitting surface, a second contact portion penetrating the embedded layer and in contact with the pad electrode, and an intermediate portion connecting the first contact portion and the second contact portion, wherein the intermediate portion has a first inclined portion making a first angle with respect to the light-emitting surface and a second inclined portion making a second angle smaller than the first angle with respect to the light-emitting surface, and the second inclined portion is located between the first inclined portion and the second contact portion.

2. The light-emitting device according to claim 1, wherein in a cross-section perpendicular to the light-emitting surface and including the first contact portion and the second contact portion, the angle of the intermediate portion with respect to the light-emitting surface decreases as it moves from the first contact portion toward the second contact portion.

3. The light-emitting device according to claim 1, wherein the embedded layer has a projection that protrudes in the direction of light emission at the outer edge of the light-emitting surface, and the transparent electrode has a projection covering portion provided to cover the projection.

4. The light-emitting device according to claim 3, wherein the projection covering portion has an inner circumferential portion extending from the top of the projection covering portion toward the first contact portion and an outer circumferential portion extending from the top of the projection covering portion toward the second contact portion, and the inner circumferential portion is inclined toward the outer circumferential portion as it moves away from the first contact portion and approaches the top portion.

5. The light-emitting device according to claim 2, wherein the embedded layer has a projection that protrudes in the direction of light emission at the outer edge of the light-emitting surface, and the transparent electrode has a projection covering portion that covers the projection.

6. The light-emitting device according to claim 5, wherein the projection covering portion has an inner circumferential portion extending from the top of the projection covering portion toward the first contact portion and an outer circumferential portion extending from the top of the projection covering portion toward the second contact portion, and in a cross section perpendicular to the light-emitting surface, the transparent electrode includes the first contact portion and the second contact portion, and the inner circumferential portion is inclined toward the outer circumferential portion as it moves away from the first contact portion and approaches the top portion.

7. The light-emitting device according to claim 6, wherein in the path from the first contact portion through the top portion to the second contact portion, the inner circumference portion has a third inclined portion that forms a third angle with respect to the light-emitting surface and a fourth inclined portion that forms a fourth angle smaller than the third angle with respect to the light-emitting surface, and the fourth inclined portion is located between the third inclined portion and the top portion.

8. The light-emitting device according to claim 6, wherein, in a cross-section perpendicular to the light-emitting surface and including the first contact portion and the second contact portion, the angle of the inclination of the inner circumference of the transparent electrode with respect to the light-emitting surface decreases as it moves away from the first contact portion and approaches the top portion.

9. The light-emitting device according to claim 6, wherein in a cross-section perpendicular to the light-emitting surface and including the first contact portion and the second contact portion, the inclination of the inner circumference of the transparent electrode is 180 degrees with respect to the first contact portion.

10. The light-emitting device according to claim 1, wherein the light-emitting elements are arranged in a square shape along a plane parallel to the light-emitting surface.

11. The light-emitting device according to claim 1, wherein the light-emitting element is delta-arranged along a plane parallel to the light-emitting surface.

12. The transparent electrode is made of indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO), and titanium oxide (TiO). ２ The light-emitting device according to claim 1, comprising one or more selected from the group consisting of ).

13. A substrate including a surface; a light-emitting element provided on the surface of the substrate and including a light-emitting surface located opposite to the surface and a side surface intersecting the light-emitting surface; an embedded layer extending to cover the side surface of the light-emitting element and the surface of the substrate; a pad electrode embedded in the substrate; and a transparent electrode extending to cover the embedded layer and having a first contact portion in contact with the light-emitting surface, a second contact portion penetrating the embedded layer and in contact with the pad electrode, and an intermediate portion connecting the first contact portion and the second contact portion, wherein the embedded layer has a projection protruding in the direction of light emission at the outer edge of the light-emitting surface, the transparent electrode has a projection covering portion provided to cover the projection, the projection covering portion has an inner circumferential portion extending from the top of the projection covering portion toward the first contact portion and an outer circumferential portion extending from the top of the projection covering portion toward the second contact portion. In the path from the first contact portion through the top portion to the second contact portion, the inner circumference portion has a third inclined portion that forms a third angle with respect to the light emitting surface and a fourth inclined portion that forms a fourth angle smaller than the third angle with respect to the light emitting surface, wherein the fourth inclined portion is located between the third inclined portion and the top portion.

14. The light-emitting device according to claim 13, wherein, in a cross section perpendicular to the light-emitting surface, the transparent electrode includes the first contact portion and the second contact portion, and the inclination of the inner circumference of the transparent electrode becomes gentler with respect to the top portion as it moves away from the first contact portion and approaches the top portion.

15. The light-emitting device according to claim 13, wherein, in a cross section perpendicular to the light-emitting surface, the transparent electrode includes the first contact portion and the second contact portion, and the inclination of the inner circumference of the transparent electrode is 180 degrees with respect to the first contact portion.

16. A light-emitting device comprising: a substrate including a surface; a light-emitting element provided on the surface of the substrate and including a light-emitting surface located on the opposite side of the substrate and a side surface intersecting the light-emitting surface; an embedded layer extending to cover the side surface of the light-emitting element and the surface of the substrate; a pad electrode embedded in the substrate; and a transparent electrode extending to cover the embedded layer and having a first contact portion in contact with the light-emitting surface, a second contact portion penetrating the embedded layer and in contact with the pad electrode, and an intermediate portion connecting the first contact portion and the second contact portion, wherein the substrate includes a first opening provided directly above the pad electrode, and the embedded layer has a first opening edge portion including a second opening communicating with the first opening, and the constituent material of the substrate and the constituent material of the first opening edge portion are different.

17. The light-emitting device according to claim 16, wherein the etching rate of the constituent material of the substrate and the etching rate of the constituent material of the first opening edge are different.

18. The light-emitting device according to claim 16, wherein the substrate has a first bevel that constitutes the opening edge of the first opening, the first opening edge has a second bevel that constitutes the opening edge of the second opening, and the second contact portion covers the pad electrode, the first bevel, and the second bevel.

19. The light-emitting device according to claim 18, wherein the first inclined surface forms a first angle with respect to the surface of the substrate, and the second inclined surface forms a second angle with respect to the surface of the substrate.

20. The light-emitting device according to claim 16, wherein the embedded layer includes a second opening edge portion that covers the outer edge of the light-emitting surface, and the second opening edge portion includes a first film and a second film that are sequentially laminated on the light-emitting surface, and the constituent materials of the first film and the constituent materials of the second film are different.

21. The light-emitting apparatus according to claim 20, wherein the etching rate of the constituent material of the first film and the etching rate of the constituent material of the second film are different.

22. The light-emitting device according to claim 1, wherein the light-emitting element has a plurality of multiple quantum well structures (MQWs) in which well layers and barrier layers are alternately stacked in a first direction, and the plurality of multiple quantum well structures are spaced apart from each other in a second direction perpendicular to the first direction.

23. The light-emitting device according to claim 22, wherein a separation layer having a band gap energy equal to or greater than the band gap energy of the barrier layer is present between the plurality of multiple quantum well structures.

24. The light-emitting device according to claim 22, wherein in the second direction, the positions of both end faces of the well layer and the positions of both end faces of the barrier layer substantially coincide.

25. An image display device comprising: a light-emitting device, the light-emitting device comprising: a substrate including a surface; a light-emitting element provided on the surface of the substrate and including a light-emitting surface located opposite to the surface and a side surface intersecting the light-emitting surface; an embedded layer extending to cover the side surface of the light-emitting element and the surface of the substrate; a pad electrode embedded in the substrate; and a transparent electrode extending to cover the embedded layer and having a first contact portion in contact with the light-emitting surface, a second contact portion penetrating the embedded layer and in contact with the pad electrode, and an intermediate portion connecting the first contact portion and the second contact portion, wherein the intermediate portion has a first inclined portion making a first angle with respect to the light-emitting surface and a second inclined portion making a second angle smaller than the first angle with respect to the light-emitting surface, and the second inclined portion is located between the first inclined portion and the second contact portion.

26. A light-emitting device comprising: a substrate including a surface; a light-emitting element provided on the surface of the substrate and including a light-emitting surface located opposite to the surface and a side surface intersecting the light-emitting surface; an embedded layer extending to cover the side surface of the light-emitting element and the surface of the substrate; a pad electrode embedded in the substrate; and a transparent electrode extending to cover the embedded layer and having a first contact portion in contact with the light-emitting surface, a second contact portion penetrating the embedded layer and in contact with the pad electrode, and an intermediate portion connecting the first contact portion and the second contact portion, wherein the embedded layer has a projection protruding in the light-emitting direction at the outer edge of the light-emitting surface, the transparent electrode has a projection covering portion provided to cover the projection, the projection covering portion has an inner circumferential portion extending from the top of the projection covering portion toward the first contact portion and an outer circumferential portion extending from the top of the projection covering portion toward the second contact portion. In the path from the first contact portion through the top portion to the second contact portion, the inner circumference portion has a third inclined portion that forms a third angle with respect to the light emitting surface and a fourth inclined portion that forms a fourth angle smaller than the third angle with respect to the light emitting surface, the fourth inclined portion being located between the third inclined portion and the top portion.

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