Dynamic stack/unstack switching cuts RF amplifier current under high-PAPR 5G signals while preserving large voltage swings and linearity.
Dynamic bias impedance switching preserves RF amplifier linearity at high power while cutting quiescent current, circuit area, and cost.
Priority-based bus contention lets any peer initiate communication on a single-wire bus, overcoming master-slave timing limits.
A band elimination filter removes synchronizing-frequency components to suppress beat noise and keep class D amplifier audio clean under load changes.
A gain control amplifier equalizes two nodes to keep the output transistor conductive, stabilizing gain and output impedance under load changes.
Separate inductor and capacitor filter paths cut multiband PA signal loss while maintaining power gain and suppressing harmonics.
Dynamic biasing lets a stacked RF amplifier switch one transistor between linear and switch modes to sustain efficiency and limit distortion.
Staggered tuning across amplifier stages broadens bandwidth and improves in-band flatness and filtering without adding more transformers.
Repositioning the impedance inverter in a Doherty amplifier broadens RF and signal bandwidth while preserving efficient power transfer.
Using complex load impedance instead of pure resistance helps a Doherty amplifier sustain efficiency and lower loss across a wider frequency range.
Phase-compensated harmonic injection transfers second harmonics between main and auxiliary paths to widen Doherty back-off efficiency and bandwidth.
A series resonator offsets carrier-branch reactance in a Doherty amplifier, widening bandwidth while preserving efficient load modulation.
Optimized pulse subtraction cuts RF signal peaks while minimizing EVM and ACPR, reducing amplifier clipping distortion within compute limits.
Multiple solid-state RF channels with phase shifting create stable cavity interference patterns for more uniform and efficient food heating.
A staggered cascode transistor layout increases spacing between hot RF devices, cutting temperature rise without enlarging die size.
Selective ET voltage circuits match RF modulation bandwidth to improve amplifier efficiency, lower power use, and reduce heat in wearables.
Open stubs on transmission lines control harmonic impedance without trap circuits, cutting loss and circuit area in broadband power amplifiers.
A low-impedance envelope input speeds transient response so the PA supply tracks RF envelopes more closely, improving efficiency and reducing heat.
A bracket-supported high-rate spring presses an SMT power amplifier against a heat sink to improve heat transfer and withstand vibration.
A bias circuit doubles DC and RF voltage at the upper transistor, balancing cascode voltage drops to cut power use and chip area.
A staged NMOS-PMOS and single-type output topology improves mmWave linearity, efficiency, and output power at low supply voltage.
A programmable linear bias-current limit protects RF power amplifiers from overvoltage thermal breakdown without shutting them down.
Complementary sourcing and sinking amplifier units balance current drive, reducing capacitive-load non-linearity without higher bias current.
Individually switched amplifiers load modulate each other to keep RF stages near saturation across OFDM power back-off with lower distortion.
Delay compensation values tied to modulation peak-to-average ratio keep RF and supply timing aligned for 5G-NR envelope tracking.
Harmonic-filtered feedback and an impedance voltage drop limit transistor current while preserving RF amplifier linearity and gain.
An RF circulator with bidirectional amplifiers and signal splitting extends multi-transceiver range while preventing signal collisions.
A reactive drain bias network removes resistive loss in a distributed FET amplifier, improving wideband PAE and output matching.
Switching the Doherty amplifier drain voltage by output power improves low-signal efficiency while preserving high saturated power.
Negative electrical-length phase compensation counters output parasitics in a Doherty amplifier, widening bandwidth while maintaining power efficiency.
A variable second-bias circuit stabilizes cascode transistor operation at high input power and low battery voltage, preserving linearity.
One pulsed ramp drives multiple PA supply voltages, improving RF power efficiency while compensating distortion and reducing heat.
A push-pull totem-pole buffer keeps channel current controlled to improve level-shift dynamic range and current drive with low output impedance.
A feedback bias circuit matches output DC level to a reference voltage, preserving waveform symmetry and reducing even-order harmonics.
Cascode differential stages with inductors and capacitors raise collector voltage and output power without a booster circuit or larger PA scale.
A resistor linked between driver nodes cuts voltage drop and power loss while preserving reliable negative gate inhibition of a self-conducting n-channel FET.
Aligned PMOS and NMOS control timing cuts overlap current in a polar transmitter, improving power efficiency without sacrificing signal quality.
Intermittent two-tone IQ shaping steers the waveform away from zero crossings, cutting FM deviation and EVM errors in narrowband polar transmitters.
Switchable RF amplifier branches and scalable inductance keep input impedance constant across gain modes, reducing mismatch and power loss.
A cross-coupled compensation circuit cancels inductive high-frequency stray currents, improving audio purity and reducing heating.
Flag matching between digital input and analog output detects DC offset and chain impairments without bulky analog circuitry.
Envelope tracking biasing on the peaking cascode transistor cuts load current and capacitance while improving Doherty amplifier efficiency and linearity.
Variable island-pattern connections tune both resistance and reactance mismatch, preserving output and efficiency as transistor specs change.
A side-by-side multi-stage MMIC layout cuts die area while controlling resonance, ringing, and bias routing at 95 GHz.
Positive envelope feedback modulates PA bias and supply voltage from the output envelope to improve RF linearity and efficiency across high-PAPR signals.
Peak-to-average ratio reduction improves DSM sampling of low amplitudes in MRI RF transmitters, raising SNR and linearity.
Dynamic PA drive control switches between compressed and product modes to preserve efficiency while reproducing low-magnitude wideband RF events.
Dynamic voltage boosting switches an ET modulator between battery and boosted supply to prevent PA clipping and reduce ACPR and EVM distortion.
A self-oscillating current feedback loop controls Class D amplifier output current while removing the need for a separate oscillator.
Selective carrier and peaking bias control keeps a Doherty amplifier efficient from low-load timeslots to peak RF output.