Electrostatic adsorption replaces vacuum and adhesive support in CMP wafer transfer, reducing thin-wafer damage, process steps, and cleaning.
An annular membrane and pressure chamber limit substrate contact while controlling polishing pressure to reduce pattern-surface damage.
Segmented inner, outer, and reservoir channels improve slurry flow, reduce wafer edge nonuniformity, and slow CMP retaining ring wear.
Regional pressure chambers and a junction groove help a CMP carrier head membrane correct non-uniform wafer pressure and improve planarization.
Radially varied cap and template stiffness match wafer thickness profiles for more uniform polishing, improving flatness and parallelism.
Alternating pressure regions and rounded slurry grooves reduce pad rebound, prevent slurry fixation, and limit wafer scratches during CMP.
A CMP retaining ring incorporates a soft polyurethane inner surface to reduce edge effects caused by wafer wobble during chemical mechanical planarization.
A polishing head retainer ring incorporates a cooling channel to circulate coolant fluid for thermal management.
Specific groove radii in a CMP seal ring distribute pressure uniformly to reduce wear on internal components during substrate processing.
Segmented retainer rings couple metal and plastic bodies via fixing members and O-rings to prevent adhesive leakage that damages semiconductor wafers.
Segmented retainer ring passages channel slurry from the outer region into the polishing zone, reducing fluid loss and improving efficiency.
A CMP carrier head flexure extends through a pressurizable upper chamber to support vertical membrane motion.
A substrate holding apparatus uses a stopper to limit elastic membrane inflation during chemical mechanical polishing.
Composite plastic carrier head components resist acidic slurry corrosion while maintaining rigidity and polishing uniformity.
Curved flow path segments in the CMP retainer ring prevent fluid stagnation and backflow by enabling smooth transitions across variable slopes.
Support substrates protect fragile 100-micron wafers from breakage while liquid adsorption maintains surface flatness.
A retaining ring with a polished inner diameter reduces slurry adherence during chemical mechanical planarization.
Segmenting the annular lower portion allows independent material optimization, reducing wear rate and replacement cost while maintaining rigidity.
Segmented retaining rings with localized adhesive bonding prevent slurry accumulation and delamination in chemical mechanical polishing.
Tilted polyphenylene sulfide blocks buckle into corresponding grooves, preventing adhesive failure and reducing replacement costs.
A roughened edge lip on an elastic membrane reduces contact area with mounting members to ease securing.
A retainer flexure connects inner and outer sections to enable vertical movement, eliminating slurry trapping gaps that cause substrate scratching.
Stacked shims absorb wear on CMP retaining rings, extending component lifespan and reducing replacement costs.
A suction member equipped with a harder peripheral attachment compensates for thickness variations during grinding.
Inclined discharge holes on a rotating cover direct drying gas downward to prevent retention and watermark formation during high-speed substrate rotation.
An arc-shaped slurry groove on the retainer ring increases material removal rates while reducing noise and vibration during chemical mechanical polishing.
Elastic members surrounding rod supports absorb rotary joint vibrations, preventing resin cover fatigue failure and liquid scattering.
Angled flanges on the reinforcement ring segment vacuum and pressure zones, resolving substrate flat interference during polishing.
Nested annular retaining rings enable independent vertical pressure tuning to resolve edge exclusion defects in chemical mechanical polishing.
Metallic insert pins in a CMP retainer ring increase coupling force, reducing defect rates and manufacturing costs compared to resin-only designs.
An edge load ring with a venting feature equalizes pressure between inner and outer surfaces to prevent sticking during chemical mechanical polishing.