Work Carriers TRIZ Cases

Electrostatic adsorption replaces vacuum and adhesive support in CMP wafer transfer, reducing thin-wafer damage, process steps, and cleaning.

An annular membrane and pressure chamber limit substrate contact while controlling polishing pressure to reduce pattern-surface damage.

Segmented inner, outer, and reservoir channels improve slurry flow, reduce wafer edge nonuniformity, and slow CMP retaining ring wear.

Regional pressure chambers and a junction groove help a CMP carrier head membrane correct non-uniform wafer pressure and improve planarization.

Radially varied cap and template stiffness match wafer thickness profiles for more uniform polishing, improving flatness and parallelism.

Alternating pressure regions and rounded slurry grooves reduce pad rebound, prevent slurry fixation, and limit wafer scratches during CMP.

A CMP retaining ring incorporates a soft polyurethane inner surface to reduce edge effects caused by wafer wobble during chemical mechanical planarization.

A polishing head retainer ring incorporates a cooling channel to circulate coolant fluid for thermal management.

Specific groove radii in a CMP seal ring distribute pressure uniformly to reduce wear on internal components during substrate processing.

Segmented retainer rings couple metal and plastic bodies via fixing members and O-rings to prevent adhesive leakage that damages semiconductor wafers.

Segmented retainer ring passages channel slurry from the outer region into the polishing zone, reducing fluid loss and improving efficiency.

A CMP carrier head flexure extends through a pressurizable upper chamber to support vertical membrane motion.