Surface-emitting semiconductor laser and surface-emitting semiconductor laser array

A semiconductor and surface-emitting technology, applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems of reducing carriers, high device resistance, increasing carrier penetration, etc., to achieve the effect of reducing oxidation and easy resonance

CN105914581BActive Publication Date: 2018-10-12FUJIFILM BUSINESS INNOVATION CORP
9 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2018-10-12

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The present invention relates to a surface emitting type semiconductor laser and a surface emitting type semiconductor laser array. The surface-emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflector, which is stacked on the substrate; an active region, which is stacked on the first semiconductor multilayer reflector or on the first semiconductor multilayer Above the film reflector; the second semiconductor multilayer film reflector, which is stacked on or over the active layer; the chamber extension region, which is between the first semiconductor multilayer film reflector and the active region or between the second semiconductor multilayer film reflector and the active area; and a carrier block layer between the chamber extension area and the active area. The carrier block layer includes a first carrier block layer and a second carrier block layer.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to a surface-emitting semiconductor laser, a surface-emitting semiconductor laser array, a surface-emitting semiconductor laser device, an optical transmission device and an information processing device. Background technique

[0002] A surface-emitting semiconductor laser is a light-emitting device capable of emitting a laser beam in a direction perpendicular to a substrate, and thus is easily formed in a two-dimensional array. Thus, surface emitting semiconductor lasers have been increasingly used as light sources for printers, image forming apparatuses, optical communications, and the like.

[0003] A method has been studied in which there is a loss difference between the fundamental transverse mode and higher transverse modes in order to operate a surface emitting type semiconductor laser in a single transverse mode and a single longitudinal mode. One study disclosed a surface-emitting semiconductor laser with a large chamber...

Examples

Embodiment Construction

[0045] Exemplary embodiments of the present invention are described below with reference to the accompanying drawings. Surface emitting semiconductor lasers (ie, vertical cavity surface emitting lasers, hereinafter abbreviated as "VCSEL") have been used as light sources for communication devices or image forming devices. In order to further increase the printing speed in the future, there is a demand for single-mode, high light output VCSEL. In order to realize single-mode (ie, fundamental transverse mode) operation using the oxidation-constrained type structure of the related art, it is necessary to set the diameter of the oxidation orifice to be 2 to 3 μm. However, setting the diameter of the oxidation aperture to 2 to 3 μm makes it difficult to uniformly achieve a single-mode light output of 3 mW or more. Setting the diameter of the oxidation aperture larger than 2 to 3 μm enables high light output, but disadvantageously, multi-mode (ie, higher transverse mode) oscillation...