Surface-emitting semiconductor laser and surface-emitting semiconductor laser array

Abstract

The present invention relates to a surface emitting type semiconductor laser and a surface emitting type semiconductor laser array. The surface-emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflector, which is stacked on the substrate; an active region, which is stacked on the first semiconductor multilayer reflector or on the first semiconductor multilayer Above the film reflector; the second semiconductor multilayer film reflector, which is stacked on or over the active layer; the chamber extension region, which is between the first semiconductor multilayer film reflector and the active region or between the second semiconductor multilayer film reflector and the active area; and a carrier block layer between the chamber extension area and the active area. The carrier block layer includes a first carrier block layer and a second carrier block layer.

Description

technical field [0001] The invention relates to a surface-emitting semiconductor laser, a surface-emitting semiconductor laser array, a surface-emitting semiconductor laser device, an optical transmission device and an information processing device. Background technique [0002] A surface-emitting semiconductor laser is a light-emitting device capable of emitting a laser beam in a direction perpendicular to a substrate, and thus is easily formed in a two-dimensional array. Thus, surface emitting semiconductor lasers have been increasingly used as light sources for printers, image forming apparatuses, optical communications, and the like. [0003] A method has been studied in which there is a loss difference between the fundamental transverse mode and higher transverse modes in order to operate a surface emitting type semiconductor laser in a single transverse mode and a single longitudinal mode. One study disclosed a surface-emitting semiconductor laser with a large chamber...

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Problems solved by technology

However, in this case, if the thickness of the carrier blocking layer is large, the resistance of the device can become too high

On the other hand, reducing the thickness of the carrier-blocking layer in order to limit the resistance of the device increases the penetration of carriers, which cannot sufficiently reduce the risk of carrier leakage from the active layer.

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