Electronic device and method for manufacturing the same

Abstract

The present invention provides an electronic device and a manufacturing method thereof. The electronic device includes an active device substrate, an insulating film material, a vertical circuit, and an anisotropic conductive adhesive. The active device substrate includes a substrate, a first circuit, and a second circuit. The first circuit is disposed on a first surface of the substrate, the second circuit is disposed on a second surface of the substrate, and the first surface and the second surface face each other while a side surface of the substrate connects the first surface and the second surface. The insulating film material is disposed on the side surface of the substrate. The vertical circuit is disposed on the surface of the insulating film material and is located between the insulating film material and the side surface of the substrate. The anisotropic conductive adhesive is disposed between the vertical circuit and the side surface of the substrate, and electrically connects the vertical circuit to the first circuit and the second circuit.

Description

Technical Field

[0001] The present invention relates to a device, and more particularly to an electronic device and a manufacturing method thereof. Background Art

[0002] Under various different application requirements, the design of electronic devices is becoming increasingly diverse. For example, in some designs, in order to prevent the size of the product display screen from being limited by the structure of the device itself, there have been designs that stitch together multiple devices with display functions to achieve the required size. In the design of stitching multiple devices, in order to reduce the presence of the stitching seam, the border width of such devices needs to be reduced as much as possible. Summary of the Invention

[0003] One object of the present invention is to provide an electronic device that can have a reduced border width.

[0004] Another object of the present invention is to provide a manufacturing method of an electronic device that can manufacture an electronic device with a narrow border.

[0005] The electronic device of the present invention includes an active element substrate, an insulating film material, vertical lines, and anisotropic conductive adhesive. The active element substrate includes a substrate, a first line, and a second line. The first line is disposed on a first surface of the substrate, the second line is disposed on a second surface of the substrate, and the first surface and the second surface face each other and the side surface of the substrate connects the first surface and the second surface. The insulating film material is disposed on the side surface of the substrate. The vertical lines are disposed on the surface of the insulating film material and are located between the insulating film material and the side surface of the substrate. The anisotropic conductive adhesive is disposed between the vertical lines and the side surface of the substrate, and electrically connects the vertical lines to the first line and the second line.

[0006] In an embodiment of the present invention, the above-mentioned insulating film material has a protruding portion. The protruding portion protrudes away from the vertical lines at the ends of the vertical lines. The protruding portion can be bent to cover the ends of the vertical lines.

[0007] In an embodiment of the present invention, the above-mentioned electronic device further includes a sealing material. The sealing material is disposed on the active element substrate and is disposed along at least a part of the periphery of the insulating film material. One of the protruding portion and the sealing material can cover the ends of the vertical lines.

[0008] In an embodiment of the present invention, the above-mentioned active element substrate further includes a flat layer. The flat layer is disposed on the substrate. The first line is located between the flat layer and the substrate, and the edge of the flat layer is spaced apart from the side surface by a lateral distance.

[0009] In an embodiment of the present invention, the end of the above-mentioned first line is flush with the side surface.

[0010] In an embodiment of the present invention, the end of the second circuit is flush with the side surface.

[0011] In an embodiment of the present invention, the anisotropic conductive adhesive contacts the end section of the first circuit and the end of the second circuit.

[0012] The manufacturing method of the electronic device of the present invention includes the following steps. Form a vertical circuit on the first part of the initial film material, and attach the initial film material to the initial substrate. A first circuit is formed on the first surface of the initial substrate, and the second part of the initial film material covers the first circuit. A second circuit is formed on the second surface of the substrate, where the first surface and the second surface face each other. Remove the excess part of the initial substrate to which the first part of the initial film material is attached to form an active element substrate, while exposing the vertical circuit and exposing the ends of the first circuit and the second circuit. Attach the first part of the initial film material to the active element substrate through an anisotropic conductive adhesive, so that the anisotropic conductive adhesive contacts the first circuit, the second circuit and the vertical circuit.

[0013] In an embodiment of the present invention, further remove the second part of the initial film material, and leave the first part of the initial film material as an insulating film material attached to the active element substrate. A sealing material can be further provided along at least part of the periphery of the insulating film material. The insulating film material can be further bent to cover the end of the vertical circuit.

[0014] In an embodiment of the present invention, the initial film material is attached to the initial substrate through an adhesive.

[0015] In an embodiment of the present invention, the step of removing the excess part of the initial substrate includes cutting the initial substrate and removing the excess part of the initial substrate to form an active element substrate. When cutting the initial substrate, the initial film material and the vertical circuit remain intact.

[0016] In an embodiment of the present invention, the initial film material is attached to the initial substrate in such a way that the vertical circuit is displaced a lateral distance relative to the first circuit.

[0017] In an embodiment of the present invention, the first part of the initial film material is attached to the active element substrate through an anisotropic conductive adhesive in such a way that the vertical circuit is aligned with the first circuit and the second circuit.

[0018] In an embodiment of the present invention, the anisotropic conductive adhesive contacts the part of the insulating film material where the vertical circuit is not provided.

[0019] In an embodiment of the present invention, the length of the vertical circuit is not less than the distance from the first circuit to the second circuit.

[0020] Based on the above, the electronic device in the embodiments of the present invention includes vertical lines disposed on the side surface of the active element substrate, and the vertical lines are used to connect the circuit points on the upper and lower surfaces (such as the aforementioned first surface and second surface) of the active element substrate to achieve a design of double-sided circuit conduction. In some embodiments, the vertical lines are pre-fabricated on an insulating film material, and the insulating film material can be attached to the side surface of the active element substrate through anisotropic conductive adhesive. When manufacturing components on the second surface of the active element substrate, the insulating film material pre-formed with vertical lines can be used as a protective layer for the first surface to ensure that the components on the first surface are not damaged, thereby improving the manufacturing yield. Description of the Drawings

[0021] Figures 1 to 9 A manufacturing method of an electronic device according to some embodiments.

[0022] Figure 10 A top view schematic diagram of the electronic device when viewing the first line in the Z direction.

[0023] Figure 11 A partial cross-sectional schematic diagram of an electronic device according to another embodiment of the present disclosure.

[0024] Figure 12 A partial cross-sectional schematic diagram of an electronic device according to yet another embodiment of the present disclosure.

[0025] Figure 13 A partial cross-sectional schematic diagram of an electronic device according to still another embodiment of the present disclosure.

[0026] The reference numerals are as follows:

[0027] 100, 200, 300, 400: Electronic devices

[0028] 110: Substrate

[0029] 110’: Initial substrate

[0030] 110A: Reserved part

[0031] 110B: Redundant part

[0032] 112: First surface

[0033] 114: Second surface

[0034] 116: Side surface

[0035] 122: Active element

[0036] 124A: First line

[0037] 124B: Second line

[0038] 126A, 126B: Component bonding pads

[0039] 128A~128F: Insulating layers

[0040] 130, 330, 430: Insulating film materials

[0041] 130’: Initial film material

[0042] 130A, 430A: First part

[0043] 130B, 430B: Second part

[0044] 140: Vertical line

[0045] 150: Adhesive

[0046] 160: Anisotropic conductive adhesive

[0047] 170: Sealing material

[0048] 170A: First sealing material

[0049] 170B: Second sealing material

[0050] 180: Electronic component

[0051] 180P: Pad

[0052] 190: Driving circuit component

[0053] AC: Active component substrate

[0054] CT1, CT2: Cutting lines

[0055] D1, D2, D3: Lateral distances

[0056] DW: Distance

[0057] E124A, E124B: Ends

[0058] ED: Drain

[0059] EG: Gate

[0060] ES: Source

[0061] G1, G2: Spacings

[0062] P130, P330A, P330B, P430A, P430B: Protrusions

[0063] S130, S130’: Surfaces

[0064] SE: Semiconductor layer

[0065] VIA: Through-hole

[0066] X, Y, Z: Directions

[0067] Z1: Distance Detailed Implementation Manner

[0068] In the accompanying drawings, for clarity, the thickness of layers, films, panels, regions, etc. is enlarged. Throughout the specification, the same reference numerals denote the same elements. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on another element", "connected to another element", or "overlapping another element", it can be directly on the other element or connected to the other element, or an intermediate element may also be present. In contrast, when an element is referred to as being "directly on another element" or "directly connected to" another element, no intermediate element is present. As used herein, "connected" can refer to physical and / or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that other elements exist between two elements.

[0069] It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Thus, the "first element", "component", "region", "layer", or "part" discussed below may be referred to as a second element, component, region, layer, or part without departing from the teachings herein.

[0070] The terms used herein are for the purpose of describing particular embodiments only and are not limiting. As used herein, unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" are intended to include the plural forms, including "at least one". "Or" means "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. It should also be understood that when used in this specification, the terms "comprises" and / or "comprising" specify the presence of the stated features, regions, wholes, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, components, and / or combinations thereof.

[0071] In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element, as shown in the figures. It should be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one figure is flipped, an element described as on the "lower" side of other elements will be oriented on the "upper" side of the other elements. Thus, the exemplary term "lower" can include both the "lower" and "upper" orientations, depending on the specific orientation of the figure. Similarly, if the device in one figure is flipped, an element described as "below" or "beneath" other elements will be oriented as "above" the other elements. Thus, the exemplary terms "below" or "above" can include both the upper and lower orientations.

[0072] As used herein, "about," "substantially," or "approximately" includes the stated value and an average within an acceptable deviation range of the specific value determined by a person of ordinary skill in the art, taking into account the particular quantities of the measurements discussed and the errors associated with the measurements (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, or ±5%. Moreover, "about," "substantially," or "approximately" as used herein can be selected with respect to optical properties, etching properties, or other properties to choose a more acceptable deviation range or standard deviation, rather than applying a single standard deviation to all properties.

[0073] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by a person of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and this invention, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0074] Exemplary embodiments are described herein with reference to cross-sectional views that are schematic illustrations of idealized embodiments. Accordingly, variations in the shapes of the illustrations as a result of, for example, manufacturing techniques and / or tolerances are to be expected. Thus, the embodiments described herein should not be construed as limited to the particular shapes of regions as shown herein, but include, for example, shape deviations resulting from manufacturing. For example, regions shown or described as flat will typically have rough and / or non-linear features. Additionally, the sharp angles shown may be rounded. Thus, the regions shown in the figures are schematic in nature, and their shapes are not intended to depict the exact shape of the regions and are not intended to limit the scope of the claims.

[0075] Figures 1 to 9 A method for manufacturing an electronic device according to some embodiments. Figure 1An initial substrate 110' is shown, as well as active components 122, first lines 124A, component bonding pads 126A, and multi-layer insulating layers 128A - 128E formed on a first surface 112 of the initial substrate 110'. In some embodiments, the components formed on the first surface 112 may further include signal lines, capacitive structures, optical film layers, and / or other components. These components formed on the first surface 112 of the initial substrate 110' can be used to be connected into a required circuit for providing functions such as driving control and signal transmission. For ease of explanation, the X-axis, Y-axis, and Z-axis are marked in the drawings herein to represent the orientation of each component and device.

[0076] The active component 122 may include a semiconductor layer SE, a gate EG, a source ES, and a drain ED, and is a component having a switching function. The semiconductor layer SE may be disposed on the insulating layer 128A. The insulating layer 128A sandwiched between the initial substrate 110' and the semiconductor layer SE can be used to provide a buffering effect to reduce stress accumulation on the initial substrate 110' or the semiconductor layer SE during the formation of the semiconductor layer SE. The material of the semiconductor layer SE may include silicon-based semiconductors (e.g., amorphous silicon, polycrystalline silicon, single-crystalline silicon, etc.), oxide semiconductors, ceramic semiconductors, or other materials having semiconductor characteristics and can be fabricated in the form of a film layer on the initial substrate 110'. The insulating layer 128B is disposed on the semiconductor layer SE and covers the semiconductor layer SE.

[0077] The gate EG is disposed on the insulating layer 128B, and the orthographic projection of the gate EG on the initial substrate 110' falls within the orthographic projection of the semiconductor layer SE on the initial substrate 110'. The insulating layer 128B sandwiched between the gate EG and the semiconductor layer SE serves as a gate insulating layer. The insulating layer 128C is disposed on the gate EG and covers the gate EG. The source ES and the drain ED are disposed on the insulating layer 128C and may fill through holes VIA penetrating the insulating layers 128A - 128C to contact the semiconductor layer SE. The source ES and the drain ED are separated from each other and are located on different sides of the gate EG. The gate EG, the source ES, and the drain ED may be composed of a metal material with good conductivity or a multi-layer stacked material of metal materials. In some embodiments, the materials of the gate EG, the source ES, and the drain ED may include non-metal conductive materials (e.g., oxide conductive materials, organic conductive materials), but are not limited thereto.

[0078] In some embodiments, the same film layer as the gate EG may further include components such as signal lines (e.g., scan lines, common lines), capacitor electrodes, conductive pads, etc. The same film layer as the source ES and the drain ED may further include components such as signal lines (e.g., data lines, common lines), touch electrodes, capacitor electrodes, conductive pads, etc. In addition, the components in the same film layer as the source ES and the drain ED can be connected to the components in the same film layer as the gate EG through corresponding vias to form the required circuit.

[0079] The first line 124A may be disposed on the insulating layer 128C and be a component in the same film layer as the source ES and the drain ED. For example, the first line 124A, the source ES, and the drain ED may be three components patterned from the same conductive material layer. The first line 124A can be electrically connected to the gate EG, the source ES, or capacitor electrodes, touch electrodes, or any signal lines not shown in the figure through corresponding conductive components. The first line 124A can be used to transmit the signals required by the active element 122 and can also be used to transmit the signals required by functional elements such as touch elements and sensing elements (if any in the device). In some embodiments, a plurality of active elements 122 arranged in an array may be provided on the initial substrate 110', and the first line 124A may be disposed outside these active elements 122. In other words, when a plurality of active elements 122 are provided on the initial substrate 110', all the active elements 122 are on the same side of the first line 124A. In addition, although only one first line 124A is shown in the figure, in fact, the number of the first lines 124A can be multiple to establish different signal transmission paths.

[0080] The insulating layer 128D is disposed on the first line 124A, the source ES, and the drain ED and covers the first line 124A, the source ES, and the drain ED. The insulating layer 128D may have a relatively thick thickness, that is, thicker than the insulating layers 128A - 128C, so as to provide a planarization effect. Therefore, the insulating layer 128D can be understood as a planar layer. However, the present disclosure is not limited thereto. In addition, the insulating layer 128E covers the insulating layer 128D. In some embodiments, the materials of the insulating layers 128A - 128C and 128E may include inorganic insulating materials, such as silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, aluminum oxide, and / or other inorganic insulating materials that can be applied to thin film transistor manufacturing technologies. The insulating layer 128D can be optionally made of an organic insulating material, but not limited thereto. The organic insulating materials that can be used may include resin materials, photoresist materials, polyimide (PI), polyethylene terephthalate (PET), polymethyl methacrylate (PMMA), etc.

[0081] by Figure 1It can be seen that the active element 122 and the first line 124A are located between the insulating layer 128D and the substrate 110, and the insulating layer 128D can be patterned to expose a part of the first line 124A that is away from the active element 122. That is to say, the insulating layer 128D does not completely cover the first line 124A. In addition, the insulating layer 128E can cover the insulating layer 128D and cover the part of the first line 124A that is not covered by the insulating layer 128D. In other words, a part of the first line 124A is covered by the insulating layer 128D and another part is covered by the insulating layer 128E. In addition, the insulating layer 128D can also expose the drain ED, and although the insulating layer 128E covers the side wall of the insulating layer 128D, it can also expose a part of the drain ED.

[0082] The component bonding pad 126A is disposed on the insulating layer 128E. The component bonding pads 126A can be arranged in pairs, and one of the paired component bonding pads 126A can be connected to the drain ED of the active element 122 and the other can be connected to a corresponding signal line (such as a common line). The component bonding pad 126A can be used to bond a corresponding component in a subsequent step. Each component bonding pad 126A can include a first conductive portion MP and a second conductive portion SP, and the second conductive portion SP can cover the first conductive portion MP. The second conductive portion SP can be a conductive portion that is less prone to oxidation compared to the first conductive portion MP. For example, the first conductive portion MP can be made of a metal material, and the second conductive portion SP can be made of a conductive oxide, but it is not limited thereto.

[0083] In Figure 2 In this case, a vertical line 140 is formed on the first portion 130A of the initial film material 130', and the initial film material 130' is attached to the first surface 112 of the initial substrate 110', wherein the second portion 130 of the initial film material 130' can cover the active element 122 and the first line 124A. The initial film material 130' can be a thin film of an insulating material that does not have conductive lines or similar elements inside. The vertical line 140 can be pre-fabricated on the initial film material 130', and the initial film material 130' is mainly attached to the initial substrate 110' with the vertical line 140 facing the initial substrate 110'. For example, the initial film material 130' can be attached to the initial substrate 110' through an adhesive 150. The adhesive 150 provides a temporary adhesion function, and in subsequent steps, the initial film material 130' can be peeled off / removed from the initial substrate 110'. In some embodiments, the adhesive 150 can be a thermosetting adhesive, but it is not limited thereto.

[0084] By Figure 2It can be known that after the initial film material 130' is attached to the initial substrate 110', components such as the active element 122, the first circuit 124A, and the element bonding pad 126A are all covered by the initial film material 130' and sandwiched between the insulating film material 13 and the initial substrate 110'. Therefore, the initial film material 130' can shield all components on the first surface 112 of the initial substrate 110'. In some embodiments, the area of the initial film material 130' in the plane of the X direction and the Y direction may not be less than that of the initial substrate 110'.

[0085] The vertical circuit 140 is disposed on the surface of the initial film material 130' and sandwiched between the initial film material 130' and the adhesive 150. The initial film material 130' is attached to the initial substrate 110' in such a way that the vertical circuit 140 is displaced a lateral distance D1 in the X direction relative to the first circuit 124A. That is to say, after the initial film material 130' is attached to the initial substrate 110', the orthographic projection of the vertical circuit 140 on the initial substrate 110' may not overlap the orthographic projection of the first circuit 124A on the initial substrate 110'. Additionally, the vertical circuit 140 can be disposed corresponding to the first circuit 124A. For example, the extension line of the orthographic projection of the vertical circuit 140 on the initial substrate 110' can be arranged on the same straight line as the orthographic projection of the first circuit 124A on the initial substrate 110'. In subsequent steps, the vertical circuit 140 can be electrically connected to the first circuit 124A to establish a connected electrical signal transmission path. Additionally, multiple first circuits 124A can be provided on the initial substrate 110', and multiple vertical circuits 140 can be provided on the initial film material 130', and the multiple first circuits 124A and the multiple vertical circuits 140 can be provided in a one-to-one correspondence to form multiple independent electrical transmission paths.

[0086] In Figure 3 the structure of Figure 2 is rotated 180 degrees about the Y axis, so that Figure 2 the Z direction in Figure 3 turns downward. At this time, the initial film material 130' is located below the initial substrate 110', and the second surface 114 of the initial substrate 110' is disposed upward, where the first surface 112 and the second surface 114 are opposite surfaces of the initial substrate 110'. Additionally, Figure 3 shows the step of forming the second circuit 124B on the second surface 114 of the initial substrate 110'. After forming the second circuit 124B, an insulating layer 128F can be further formed on the second surface 114 of the initial substrate 110'. The insulating layer 128F can cover the second circuit 124B and partially expose the second circuit 124B. Additionally, Figure 3 also shows the structure of forming the element bonding pad 126B on the initial substrate 110'. The element bonding pad 126B is disposed on the insulating layer 128F, can contact a part of the second circuit 124B exposed by the insulating layer 128F, and is used for bonding with other elements.

[0087] During the formation of the second circuit 124B, the insulating layer 128F, and the component bonding pad 126B, components such as the active component 122, the first circuit 124A, and the vertical circuit 140 on the first surface 112 are covered by the initial film material 130' and are not exposed. Therefore, during the formation of the second circuit 124B, the insulating layer 128F, and the component bonding pad 126B, components such as the active component 122, the first circuit 124A, and the vertical circuit 140 are not damaged or altered, which helps to ensure the integrity of components such as the active component 122, the first circuit 124A, and the vertical circuit 140. In other words, the covering of the initial film material 130' helps to improve the manufacturing yield and maintain the quality of the components.

[0088] In Figure 3 the first circuit 124A and the second circuit 124B can be correspondingly arranged. For example, the orthographic projection of the first circuit 124A on the second surface 114 of the initial substrate 110' can overlap the orthographic projection of the second circuit 124B on the second surface 114. Additionally, the pattern of the vertical circuit 140 can also be designed corresponding to the first circuit 124A and the second circuit 124B. For example, the length L140 of the vertical circuit 140 can be not less than the distance DW between the first circuit 124A and the second circuit 124B. In some embodiments, the orthographic projection of the vertical circuit 140 on the second surface 114 of the initial substrate 110', the orthographic projection of the first circuit 124A on the second surface 114, and the orthographic projection of the second circuit 124B on the second surface 114 can be arranged on the same straight path.

[0089] Next, the initial substrate 110' is cut along Figure 3 the cutting line CT1, where the cutting line CT1 divides the initial substrate 110' into a reserved portion 110A and a redundant portion 110B, and the redundant portion 110B can be the portion of the initial substrate 110' without the active component 122. After that, as Figure 4 shown, the redundant portion 110B of the initial substrate 110' is removed to form the active component substrate AC, and the vertical circuit 140 on the first portion 130A of the initial film material 130' is exposed. As can be seen from Figure 3 the cutting line CT1 can pass through the first circuit 124A to the second circuit 124B. Therefore, after removing the redundant portion 110B of the initial substrate 130', the end E124A of the first circuit 124A and the end E124B of the second circuit 124B can be exposed. In some embodiments, the cutting line CT1 may not pass through the insulating layer 128D. For example, the cutting line CT1 and the insulating layer 128D can be separated by a lateral distance D2. In some embodiments, the lateral distance D2 can range from 100 microns to 500 microns, such as 150 microns, 200 microns, 250 microns, etc.

[0090] In Figure 4 , the active device substrate AC includes a reduced substrate 110, active devices 122, a first line 124A, a second line 124B, device bonding pads 126A, and device bonding pads 126B. During the process of cutting the initial substrate 110' and removing the redundant portion 110B, the side surface 116 of the substrate 110 can be exposed, where the side surface 116 is a surface connecting between the first surface 112 and the second surface 114, and the normal vector of the side surface 116 is different from that of the first surface 114 and also different from that of the second surface 114. At the same time, both the first line 124A and the second line 124B can be exposed on the side surface 116. That is to say, the ends E124A of the first line 124A and the ends E124B of the second line 124B can both be flush with the side surface 116. In some embodiments, the ends E124A of the first line 124A and the ends E124B of the second line 124B can be optionally polished to help increase the area of the ends E124A and the ends E124B in the plane of the Y-direction - Z-direction, but not limited thereto.

[0091] In Figure 4 , the insulating layers 128A - 128C and the insulating layer 128E can all be flush with the side surface 116. The edge of the insulating layer 128D can be separated from the side surface 116 of the substrate 110 by a lateral distance D2, and the insulating layer 128E can continuously extend between the side wall of the insulating layer 128D and the side surface 116 of the substrate 110. In addition, the insulating layer 128F can also be separated from the side surface 116 by a lateral distance D3, and the second line 124B continuously extends between the edge of the insulating layer 128F and the side surface 116. In other embodiments, the insulating layer 128F can be optionally flush with the side surface 116.

[0092] In Figure 4 's step of cutting the initial substrate 130', the initial film 130' and the vertical lines 140 on the initial film 130' are both maintained intact. That is to say, neither the initial film 130' nor the vertical lines 140 on the initial film 130' are cut or damaged. In addition, in Figure 4 's step, the adhesive 150 corresponding to the redundant portion 110B can be further removed to expose the first portion 130A of the initial film 130' and to expose the vertical lines 140 on the initial film 130'. The second portion 130B of the initial film 130' is attached to the active device substrate AC through the remaining adhesive 150.

[0093] Figure 5Shows the step of forming the anisotropic conductive adhesive 160 on the side surface 116 of the substrate 110. The anisotropic conductive adhesive 160 can contact the side surface 116 of the substrate 110, as well as the insulating layers 128A-128C and the insulating layer 128E flush with the side surface 116. At the same time, the anisotropic conductive adhesive 160 also contacts the end E124A of the first line 124A and the end E124B of the second line 124B. In addition, the anisotropic conductive adhesive 160 can extend locally to contact the insulating layer 128F recessed relative to the second line 124B to cover the second line 124B. In this way, the contact area between the anisotropic conductive adhesive 160 and the second line 124B can be increased, which helps to improve the quality of conductive transmission.

[0094] Figure 6 Represents the step of attaching the first part 130A of the initial film material 130' to the active element substrate AC through the anisotropic conductive adhesive 160. Specifically, this step may include bending the initial film material 130' and bringing the first part 130A of the initial film material 130' into contact with the anisotropic conductive adhesive 160. In this way, the vertical line 140 can be attached to the side surface 116 of the substrate 110 through the anisotropic conductive adhesive 160. The first part 130A of the initial film material 130' is attached to the active element substrate AC through the anisotropic conductive adhesive 160 in such a way that the vertical line 140 is aligned with the first line 126A and the second line 126B, for example. The anisotropic conductive adhesive 160 can physically contact the first line 124A, the second line 124B, and the vertical line 140, so that the first line 124A, the second line 124B, and the vertical line 140 can be electrically connected to each other to form an electrical transmission path that continuously extends from the first surface 112 of the substrate 110 through the side surface 116 to the second surface 114.

[0095] Next, the initial film material 130' can be cut along Figure 6 the cutting line CT2 therein and the second part 130B of the initial film material 130' can be removed, where the cutting line CT2 can be spaced a distance Z1 from the vertical line 140 so that the cutting step does not cut the vertical line 140. After cutting the initial film material 130' along the cutting line CT2, the second part 130B and the corresponding adhesive 150 can be removed to obtain Figure 7 the structure, where the element bonding pad 126A can be exposed. In Figure 7 the initial film material 130' is cut into the insulating film material 130 attached to the active element substrate AC, and the insulating film material 130 can have a protruding portion P130 protruding away from the vertical line 140 at the end of the vertical line 140. The protruding height of the protruding portion P130 is, for example, the distance Z1 or less described above.

[0096] Figure 8 Represents the structure in which the protruding portion P130 of the insulating film material 130 is bent. InFigure 8 In Figure 8 , the protruding portion P130 of the insulating film material 130 can be bent to cover the end of the vertical circuit 140, and can further cover the anisotropic conductive adhesive 160. The periphery of the bent protruding portion P130 can be sealed and fixed by the sealing material 170. In this step, the sealing material 170 can be disposed along at least a part of the periphery of the insulating film material 130 to fix and seal the periphery of the insulating film material 130. The sealing material 170 is located between the insulating film material 130 and the insulating layer 128D. The sealing material 170 can be a material having water and gas barrier properties. In some embodiments, the sealing material 170 can have light reflectivity, but is not limited thereto. In Figure 8 In Figure 8 , the sealing material 170 is disposed on the periphery of the insulating film material 130 adjacent to the first circuit 126A, but is not limited thereto. In other embodiments, the periphery of the insulating film material 130 adjacent to the second circuit 126B can also be sealed by the sealing material 170 and the sealing material 170 can cover and seal the end of the vertical circuit 140 adjacent to the second circuit 126B. Thus, except for the element bonding pads 128A and the element bonding pads 128B, other conductor members and conductor lines can be sealed and not exposed.

[0097] Figure 9 Presented in Figure 8 The step of bonding the electronic component 180 and the drive circuit component 190 to the structure shown in Figure 8 to form the electronic device 100. In Figure 9 In Figure 9 , the electronic device 100 includes an active element substrate AC, an insulating film material 130, a vertical circuit 140, and an anisotropic conductive adhesive 160, wherein the active element substrate AC can include a substrate 110, active elements 122, a first circuit 124A, a second circuit 124B, element bonding pads 126A, and element bonding pads 126B. In addition, the electronic component 180 is bonded to the element bonding pad 126A of the active element substrate AC, and the drive circuit component 190 is bonded to the element bonding pad 126B of the active element substrate AC.

[0098] The substrate 110 has a first surface 112, a second surface 114, and a side surface 116. The first circuit 124A is disposed on the first surface 112 of the substrate 110, and the second circuit 124B is disposed on the second surface 114 of the substrate 110. In addition, the active element substrate AC further includes active elements 122 disposed on the substrate 110 and related signal lines not shown. The first circuit 124A can be electrically connected to the signal lines related to the active elements 122 to provide a transmission path for electrical signals.

[0099] The insulating film material 130 is disposed on the side surface 116 of the substrate 110. The insulating film material 130 is, for example, a film material with flexible properties, and the material of the insulating film material 130 can be a plastic material, such as polyimide (PI) or other flexible materials. The dimension of the insulating film material 130 in the Z direction can generally correspond to the active element substrate AC. As Figure 9 shown, the insulating film material 130 can protrude more than the vertical line 140, but the protruding portion P130 of the insulating film material 130 can be bent to cover the vertical line 140. In some embodiments, the extension length of the insulating film material 130 in the Z direction may not exceed the top surface of the insulating layer 128D or may not exceed the height of the element bonding pad 126A, which helps to make it easier and more stable for the electronic component 180 to be bonded to the active element substrate AC. For example, when the insulating film material 130 has a relatively long extension length in the Z direction, the tool used to bond the electronic component 180 may be blocked by the protruding insulating film material 130, affecting the bonding process. However, if the extension length of the insulating film material 130 in the Z direction does not exceed the top surface of the insulating layer 128D or does not exceed the height of the element bonding pad 126A, the bonding process can be avoided from being affected.

[0100] The vertical line 140 is disposed on the surface S130 of the insulating film material 130 and is located between the side surface 116 of the substrate 110 and the insulating film material 130. The vertical line 140 is not buried in the insulating film material 130 but protrudes on the surface S130 of the insulating film material 130. In some embodiments, the vertical line 140 is a conductive line, which is made of, for example, metal or other conductive materials. The vertical line 140 is, for example, a linear conductor structure extending along the Z direction, and the extension length of the vertical line 140 can be at least equal to the distance DW in the Z direction between the first line 124A and the second line 124B. The orthographic projection of the vertical line 140 on the plane where the side surface 116 is located can overlap the orthographic projections of the first line 124A and the second line 124B on the plane where the side surface 116 is located. In other words, the extension lines of the first line 124A and the second line 124B can pass through the vertical line 140. The end of the vertical line 140 can be covered by the protruding portion P130 of the insulating film material 130 without being exposed, which helps to prevent the vertical line 140 from being oxidized or damaged.

[0101] The anisotropic conductive adhesive 160 is used to attach the insulating film material 130 to the active element substrate AC. As Figure 9As shown, the anisotropic conductive adhesive 160 contacts the insulating layer 128E, the first circuit 126A, the insulating layers 128A - 128C, and the second circuit 124B of the substantially flush side surface 116. Also, the anisotropic conductive adhesive 160 extends toward the insulating layer 128F near the end of the second circuit 124B to cover the second circuit 124B. A part of the anisotropic conductive adhesive 160 is disposed between the vertical circuit 140 and the side surface 116 of the substrate 110, and electrically connects the vertical circuit 140 to the first circuit 124A and the second circuit 124B. In this way, the vertical circuit 140, the first circuit 124A, and the second circuit 124B can form an electrical transmission path that continuously extends from the first surface 112 of the substrate 110 through the side surface 116 to the second surface 114 due to the conductive directionality of the anisotropic conductive adhesive 160.

[0102] The sealing material 170 can be disposed on the first surface 112 of the substrate 110 and is disposed along the periphery of the insulating film material 130. The material of the sealing material 170 has water - and gas - barrier properties, which helps reduce the possibility of the vertical circuit 140 deteriorating, oxidizing, or having reduced conductivity due to the influence of moisture. In some embodiments, the sealing material 170 can have light - reflecting properties, which helps improve the optical effect of the electronic device 100.

[0103] In some embodiments, the electronic component 180 is bonded to the component bonding pad 126A located on the first surface 112. The electronic component 180 is, for example, a light - emitting diode, and the light - emitting diode can be a horizontal light - emitting diode, a vertical light - emitting diode, or other types of light - emitting diodes according to different structural designs. In some embodiments, the light - emitting diode can be a millimeter light - emitting diode, a sub - millimeter light - emitting diode, or a micrometer light - emitting diode according to the structural size. In some embodiments, when the sealing material 170 has light - reflecting properties, the sealing material 170 can reflect the light emitted by the electronic component 180 to improve the light utilization rate of the electronic component 180. Additionally, the electronic component 180 can include two pads 180P, and these two pads 180P are respectively connected to different component bonding pads 126A. In some embodiments, when the electronic component 180 is a light - emitting diode, these two pads 180P can be an anode pad and a cathode pad respectively.

[0104] The driving circuit 190 is bonded to the component bonding pad 126B located on the second surface 114. The driving circuit 190 includes, for example, a flexible circuit board, a driving chip, or a combination thereof. The driving circuit 190 can be used to provide the electrical signals required by the electronic component 180. The signals provided by the driving circuit 190 can be transmitted to the second line 124B through the component bonding pad 126B, and then transmitted to the first line 124A located on the first surface 112 through the electrical transmission path formed by the second line 124B, the anisotropic conductive adhesive 160, the vertical line 140, and the first line 124A. The first line 124A can further transmit the electrical signal to the corresponding component (such as a corresponding signal line or electrode) disposed on the first surface 112. In this way, on one side of the first surface 112 of the active device substrate AC, there is no need to reserve the area required for bonding the driving circuit 190, and a narrow bezel design can be achieved.

[0105] In some embodiments, due to the narrow bezel design, the setting position of the electronic component 180 does not need to be limited and can be set around the active device substrate AC, adjacent to the edge of the electronic device 100. In this way, the electronic device 100 can have a substantially borderless structural design. When such an electronic device 100 is applied to products such as a tiled display, the effect of tiling multiple devices can be improved, making it difficult for users to perceive the splicing seams, and also helping to improve the picture continuity of the tiled display. As Figures 1 to 9 described in the manufacturing steps, during the manufacturing process of the electronic device 100, the components and lines on the first surface 112 can be covered by the initial film 130' to avoid being damaged during the manufacturing process of the second line 124B. Therefore, Figures 1 to 9 the described manufacturing steps help to improve the manufacturing yield of the electronic device 100.

[0106] Figure 10 FIG. is a top view schematic diagram of the electronic device 100 when viewing the first line 124A in the Z direction. To simplify the drawing to present the configuration relationship between components, Figure 10 only the substrate 110, the first line 124A, the insulating film material 130, the conduction line 140, the anisotropic conductive adhesive 160, and the sealing material 170 are shown. As Figure 10 can be seen, the protruding portion P130 of the insulating film material 130 can cover the end of the vertical line 140, and the sealing material 170 can be disposed along the periphery of the insulating film material 130. Figure 10 Two first lines 124A are presented in, which are used to transmit different electrical signals, for example. As Figure 10 can be seen, the number of the vertical lines 140 can correspond to the number of the first lines 124A, and each vertical line 140 can be disposed corresponding to one of the first lines 124A, thereby forming multiple electrical transmission paths.

[0107] An anisotropic conductive adhesive 160 is disposed between an insulating film material 130 and a substrate 110. The anisotropic conductive adhesive 160 not only contacts the vertical lines 140, but also contacts the portion of the insulating film material 130 where the vertical lines 140 are not provided. That is to say, the anisotropic conductive adhesive 160 can be continuously distributed between adjacent vertical lines 140 without being patterned. In this embodiment, the interval G1 between each vertical line 140 and the corresponding first line 124A is smaller than the interval G2 from the adjacent vertical line 140. Since the anisotropic conductive adhesive 160 has the characteristic of conducting along the shortest path, although the anisotropic conductive adhesive 160 is continuously distributed between adjacent vertical lines 140, it will not electrically conduct between adjacent vertical lines 140. In other words, under the setting of the continuous anisotropic conductive adhesive 160, each vertical line 140 can be electrically connected to the corresponding first line 124A without being electrically connected to the adjacent vertical line 140, thereby forming a required electrical transmission path, such as electrically connecting each first line 124A to a corresponding vertical line 140.

[0108] Figure 11 FIG. is a partial cross-sectional schematic diagram of an electronic device according to another embodiment of the present disclosure. Figure 11 The electronic device 200 is substantially similar to Figure 9 the electronic device 100, but Figure 11 the electronic components 180 and the drive circuit components 190 are omitted. Specifically, the electronic device 200 includes an active element substrate AC, an insulating film material 130, vertical lines 140, an anisotropic conductive adhesive 160, and a sealing material 170, and the manufacturing methods and configuration relationships of these components can be referred to the description of the foregoing embodiments without repetition. Different from the electronic device 100, the insulating film material 130 in the electronic device 200 is not bent, so the protruding portion P130 of the insulating film material 130 can extend in the Z direction beyond the vertical lines 140. In addition, as Figure 11 shown, the sealing material 170 can cover the end of the vertical line 140 and be sandwiched between the insulating film material 130 and the active element substrate AC. The sealing material 170 can selectively cover the periphery of the protruding portion P130 of the insulating film material 130. Specifically, according to this embodiment and Figure 9 the embodiment of, it can be known that one of the insulating film material 130 and the sealing material 170 can cover, or even directly contact, the end of the vertical line 140. In some embodiments, the insulating film material 130 and the sealing material 170 can respectively contact a part of the end of the vertical line 140 to completely cover the end of the vertical line 140.

[0109] Figure 12 FIG. is a partial cross-sectional schematic diagram of an electronic device according to still another embodiment of the present disclosure. Figure 12 The electronic device 300 is substantially similar to Figure 9 the electronic device 100, butFigure 12 The electronic component 180 and the drive circuit component 190 are omitted. Specifically, the electronic device 300 includes an active element substrate AC, an insulating film material 330, a vertical line 140, an anisotropic conductive adhesive 160, and a sealing material 170. The manufacturing methods and configuration relationships of these components can be referred to the descriptions in the foregoing embodiments and will not be repeated. Different from the electronic device 100, the insulating film material 330 of the electronic device 300 can extend in the Z direction beyond both ends of the vertical line 140. The material and manufacturing method of the insulating film material 330 can be the same as those of the foregoing insulating film material 130, but only the structural design is slightly different from that of the insulating film material 130.

[0110] For example, the insulating film material 130 of this embodiment may include a protruding portion P330A and a protruding portion P330B. The protruding portion P330A protrudes away from the vertical line 140 in the Z direction from the end of the vertical line 140 adjacent to the first surface 112, and the protruding portion P330B protrudes away from the vertical line 140 in the Z direction from the end of the vertical line 140 adjacent to the second surface 114. The sealing material 170 may include a first sealing material 170A and a second sealing material 170B. The first sealing material 170A and the second sealing material 170B can directly contact the opposite ends of the vertical line 140 respectively to seal the vertical line 140. The first sealing material 170A is disposed between the protruding portion P330A and the active element substrate AC, and the second sealing material 170B is disposed between the protruding portion P330B and the active element substrate AC.

[0111] Figure 13 It is a partial cross-sectional schematic diagram of an electronic device according to another embodiment of the present disclosure. Figure 13 The electronic device 400 is substantially similar to Figure 9 the electronic device 100, but Figure 13 the electronic component 180 and the drive circuit component 190 are omitted. Specifically, the electronic device 400 includes an active element substrate AC, an insulating film material 430, a vertical line 140, an anisotropic conductive adhesive 160, and a sealing material 170. The configuration relationship, manufacturing method, and function of the active element substrate AC, the insulating film material 430, the vertical line 140, the anisotropic conductive adhesive 160, and the sealing material 170 can be referred to Figure 9 the description of the embodiments. The difference between this embodiment and Figure 9 the electronic device 100 mainly lies in the design of the insulating film material 430. Therefore, the electronic device 400 can be regarded as an implementation manner in which the design of the insulating film material 430 is used to replace the insulating film material 130 of the electronic device 100.

[0112] In this embodiment, the active element substrate AC may at least include a substrate 110, an active element 122, a first circuit 124A, a second circuit 124B, an element bonding pad 126A, an element bonding pad 126B, and a multilayer insulating layer (such as the insulating layers 124A to 128F described in the foregoing embodiment). The substrate 110 has a first surface 112, a second surface 114, and a side surface 116 connected between the first surface 112 and the second surface 114. The active element 122 and the first circuit 124A are disposed on the first surface 112 of the substrate 110, while the second circuit 124 is disposed on the second surface 114 of the substrate 110. The element bonding pad 126A may be disposed on the first surface 112 of the substrate 110 and is at least partially electrically connected to the active element 122. The element bonding pad 126B may be disposed on the second surface 114 of the substrate 110 and is electrically connected to the second circuit 126B.

[0113] In Figure 13 , in addition to being attached to the active element substrate AC along the plane of the side surface 116 of the substrate 110, the insulating film material 430 is also partially attached to the active element substrate AC along the plane of the second surface 114 of the substrate 110. In other words, the first portion 430A of the insulating film material 430 is disposed substantially along the plane of the Y direction - Z direction, while the second portion 430B is disposed substantially along the plane of the X direction - Y direction. Thus, the insulating film material 430 is bent, for example, into an L-shaped cross-sectional structure, as Figure 13 shown.

[0114] In this embodiment, the sealing material 170 may be disposed along the periphery of the insulating film material 430. The insulating film material 430 may have a protruding portion P430A and a protruding portion P430B protruding from the vertical circuit 140. The protruding portion P430A is located at the edge of the first portion 430A, and the protruding portion P430B is located at the edge of the second portion 430B. The sealing material 170 may include a first sealing material 170A and a second sealing material 170B, where the first sealing material 170A and the second sealing material 170B are respectively disposed along the protruding portion P430A and the protruding portion P430B. Additionally, the first sealing material 170A and the second sealing material 170B may optionally contact the opposite ends of the vertical circuit 140.

[0115] In summary, in the electronic device according to the embodiment of the present invention, the anisotropic conductive adhesive is used to attach the vertical circuit fabricated on the insulating film material to the active device substrate to establish an electrical transmission path in the vertical direction. Therefore, the electronic device can bond the driving circuit elements and functional elements (such as light-emitting elements, display elements, etc.) to the opposite two surfaces of the active device substrate, so that the functional elements can be arranged as close as possible to the edge of the electronic device. In this way, the electronic device can have a narrow bezel design to meet various application requirements. In addition, when manufacturing the electronic device, circuits need to be fabricated on the opposite two surfaces of the active device substrate. The insulating film material provided with the vertical circuit can be used to protect the active device circuits on the first surface of the active device substrate, and can avoid damaging the circuits and elements that have been fabricated on the first surface in the process of fabricating the circuits on the second surface. In this way, in addition to supporting and covering the vertical circuit, the insulating film material in the electronic device can also provide a protective effect to improve the manufacturing yield of the electronic device.

Claims

1. An electronic device, comprising: An active element substrate, including a substrate, a first circuit, and a second circuit, the first circuit being disposed on a first surface of the substrate, the second circuit being disposed on a second surface of the substrate, and the first surface and the second surface being opposite to each other while a side surface of the substrate connects the first surface and the second surface; An insulating film material disposed on the side surface of the substrate; A vertical circuit disposed on a surface of the insulating film material and located between the insulating film material and the side surface of the substrate; And An anisotropic conductive adhesive disposed between the vertical circuit and the side surface of the substrate and electrically connecting the vertical circuit to the first circuit and the second circuit; A sealing material disposed on the active element substrate and disposed along at least a part of a periphery of the insulating film material.

2. The electronic device according to claim 1, wherein the insulating film material has a protruding portion that protrudes away from the vertical circuit at an end of the vertical circuit.

3. The electronic device according to claim 2, wherein the protruding portion is bent to cover the end of the vertical circuit.

4. The electronic device according to claim 1, wherein one of the insulating film material and the sealing material covers an end of the vertical circuit.

5. The electronic device according to claim 1, wherein the active element substrate further includes an insulating layer, the first circuit is located between the insulating layer and the substrate, and an edge of the insulating layer is spaced apart from the side surface by a lateral distance.

6. The electronic device according to claim 1, wherein an end of the first circuit is flush with the side surface.

7. The electronic device according to claim 1, wherein an end of the second circuit is flush with the side surface.

8. The electronic device according to claim 1, wherein the anisotropic conductive adhesive contacts an end of the first circuit and an end of the second circuit.

9. A method for manufacturing an electronic device, comprising: Forming a vertical circuit on a first portion of an initial film material and attaching the initial film material to an initial substrate, wherein a first circuit is formed on a first surface of the initial substrate, and a second portion of the initial film material covers the first circuit; Forming a second circuit on a second surface of the initial substrate, wherein the first surface and the second surface are opposite to each other; Removing an excess portion of the initial substrate to which the first portion of the initial film material is attached to form an active element substrate, while exposing the vertical circuit and exposing ends of the first circuit and the second circuit; And Attaching the first portion of the initial film material to the active element substrate through an anisotropic conductive adhesive, such that the anisotropic conductive adhesive contacts the first circuit, the second circuit, and the vertical circuit.

10. The method for manufacturing an electronic device according to claim 9, further comprising removing the second portion of the initial film material and leaving the first portion of the initial film material as an insulating film material attached to the active element substrate.

11. The manufacturing method of the electronic device as claimed in claim 10 further includes disposing a sealing material along at least a part of the periphery of the insulating film material.

12. The manufacturing method of the electronic device as claimed in claim 10 further includes bending the insulating film material to cover the ends of the vertical lines.

13. The manufacturing method of the electronic device as claimed in claim 9, wherein the initial film material is attached to the initial substrate by an adhesive.

14. The manufacturing method of the electronic device as claimed in claim 9, wherein the step of removing the excess portion of the initial substrate includes cutting the initial substrate and removing the excess portion of the initial substrate to form the active element substrate.

15. The manufacturing method of the electronic device as claimed in claim 14, wherein the initial film material and the vertical lines remain intact when the initial substrate is cut.

16. The manufacturing method of the electronic device as claimed in claim 9, wherein the initial film material is attached to the initial substrate in such a manner that the vertical lines are displaced a lateral distance relative to the first line.

17. The manufacturing method of the electronic device as claimed in claim 9, wherein the first portion of the initial film material is attached to the active element substrate by the anisotropic conductive adhesive in such a manner that the vertical lines are aligned with the first line and the second line.

18. The manufacturing method of the electronic device as claimed in claim 9, wherein the anisotropic conductive adhesive contacts a portion of the insulating film material where the vertical lines are not provided.

19. The manufacturing method of the electronic device as claimed in claim 9, wherein the length of the vertical lines is not less than the distance between the first line and the second line.

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