Display panel and manufacturing method thereof

Abstract

The present application proposes a display panel and a method for manufacturing the same; the display panel includes a substrate, a light-emitting device layer disposed on the substrate, an encapsulation layer disposed on the light-emitting device layer, and an array drive layer disposed on the encapsulation layer. The light-emitting device layer includes a plurality of light-emitting devices, the plurality of light-emitting devices being embedded in the encapsulation layer, and the array drive layer including a plurality of thin-film transistors electrically connected to the plurality of light-emitting devices. The present application forms a light-emitting device layer by directly disposing a plurality of light-emitting devices on the substrate, then disposing an encapsulation layer on the light-emitting device layer so that the light-emitting devices are embedded in the encapsulation layer, and then disposing an array drive layer on the encapsulation layer so that the thin-film transistors are electrically connected to the light-emitting devices. The light-emitting devices are more firmly bonded to the substrate and the array drive layer, and the manufacturing process can overcome the low yield and high technical difficulty of the "anisotropic conductive adhesive bonding" process and the "metal bonding" process in conventional display panels.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a method for manufacturing the same. Background Art

[0002] A Micro-LED module typically includes an array substrate and multiple Micro-LED chips mounted on the array substrate. The Micro-LED chips are typically transferred to the array substrate using mass transfer technology. Currently, mass transfer of LED chips typically utilizes an anisotropic conductive adhesive bonding process (ACF bonding) or a low-temperature metal bonding process that forms an alloy to securely connect the LED chips to the array substrate.

[0003] However, these bonding processes all have technical problems such as low bonding strength between the Micro-LED chip and the array substrate and low yield. Summary of the Invention

[0004] The present application provides a display panel and a manufacturing method thereof, so as to improve the technical problem of low bonding strength between a chip and a substrate in a current display panel during a chip and substrate binding process.

[0005] To solve the above technical problems, the technical solutions provided by this application are as follows:

[0006] The present application provides a display panel, comprising:

[0007] substrate;

[0008] A light-emitting device layer is provided on the base substrate, and the light-emitting device layer includes a plurality of light-emitting devices;

[0009] an encapsulation layer, disposed on the light-emitting device layer, wherein a plurality of the light-emitting devices are embedded in the encapsulation layer; and

[0010] An array driving layer is provided on the packaging layer, and the array driving layer includes a plurality of thin film transistors electrically connected to the plurality of light emitting devices.

[0011] In the display panel of the present application, the encapsulation layer includes an encapsulation portion covering the periphery of the light-emitting device;

[0012] Wherein, in the direction from the array driving layer to the base substrate, the size of the cross section of the packaging portion parallel to the base substrate gradually increases.

[0013] In the display panel of the present application, the light-emitting device layer further includes a common electrode layer provided on the base substrate, and the light-emitting device is provided on the common electrode layer;

[0014] Wherein, the first end of the light emitting device is electrically connected to the thin film transistor, and the second end of the light emitting device is electrically connected to the common electrode layer.

[0015] In the display panel of the present application, the encapsulation layer further includes a support portion provided on the base substrate, and the common electrode layer covers a surface of the support portion;

[0016] Wherein, the support portion and the common electrode layer are made of transparent materials.

[0017] In the display panel of the present application, the common electrode layer includes a first electrode portion provided on the surface of the support portion and a second electrode portion provided on the surface of the base substrate, and the first electrode portion and the second electrode portion are provided continuously;

[0018] At least a portion of the second electrode portion is in contact with the packaging portion, and the second electrode portion is electrically connected to a common voltage terminal.

[0019] In the display panel of the present application, the encapsulation layer further includes a first conductive layer provided on a surface of the encapsulation portion and a surface of the second electrode portion;

[0020] The second electrode portion is electrically connected to the common voltage terminal through the first conductive layer, and the first conductive layer is insulated from the first end of the light emitting device.

[0021] In the display panel of the present application, the encapsulation layer further includes a first insulating layer provided on the same layer as the encapsulation portion, a first via hole provided between the encapsulation portion and the first insulating layer, and a second insulating layer provided on the first insulating layer, wherein the second insulating layer fills the first via hole;

[0022] The first conductive layer is located on an interface between the second insulating layer, the first insulating layer, the second electrode portion, and the packaging portion.

[0023] In the display panel of the present application, the array driving layer further includes a third insulating layer disposed on the second insulating layer, and the thin film transistor is disposed in the third insulating layer;

[0024] In which, the third insulating layer is provided with a first conductive member electrically connected to the first end of the light-emitting device and a second conductive member electrically connected to the first conductive layer, the first conductive member is electrically connected to the source or drain of the thin film transistor, and the second conductive member is electrically connected to the common voltage end.

[0025] In the display panel of the present application, the display panel further includes a second conductive layer disposed on the array driving layer;

[0026] The second conductive layer is electrically connected to the source or drain of the thin film transistor, and the second conductive layer is electrically connected to the first end of the light emitting device through the thin film transistor.

[0027] This application also proposes a method for manufacturing a display panel, which is used to manufacture the above-mentioned display panel, comprising:

[0028] Providing a substrate and a plurality of light-emitting devices;

[0029] transferring the plurality of light-emitting devices onto the base substrate to form a light-emitting device layer;

[0030] forming an encapsulation layer on the light-emitting device layer so that the light-emitting device is embedded in the encapsulation layer;

[0031] An array driving layer including a plurality of thin film transistors is formed on the encapsulation layer, and the thin film transistors are electrically connected to the light emitting devices.

[0032] Beneficial effects

[0033] The present application forms a light-emitting device layer by directly arranging a plurality of light-emitting devices on the substrate, and then arranging an encapsulation layer on the light-emitting device layer so that the light-emitting devices are embedded in the encapsulation layer, and then arranging an array driving layer on the encapsulation layer to electrically connect the thin film transistor and the light-emitting device. Compared with the method of transferring the light-emitting chip in the conventional display panel to the array substrate, the light-emitting device in the present application is more firmly combined with the base substrate and the array driving layer, and the manufacturing process can overcome the problems of low binding yield and high technical difficulty in the "anisotropic conductive adhesive binding" process and the "metal binding" process in the conventional display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0035] Figure 1 is a schematic diagram of the overall structure of the display panel described in this application;

[0036] Figure 2 This is a schematic diagram of the first film layer structure of the display panel described in this application;

[0037] Figure 3 is a schematic diagram of the second film layer structure of the display panel described in this application;

[0038] Figure 4Schematic diagram of the third film layer structure of the display panel described in this application;

[0039] Figure 5 This is a schematic diagram of the fourth film layer structure of the display panel described in this application.

[0040] Description of reference numerals:

[0041] The base substrate 100, the buffer layer 200, the light-emitting device layer 300, the light-emitting device 310, the middle light-emitting portion 311, the P electrode 312, the N electrode 313, the common electrode layer 320, the first electrode portion 321, the second electrode portion 322, the encapsulation layer 400, the encapsulation portion 410, the conductive pad layer 411, the support portion 420, the first insulating layer 430, the first via hole 440, the second insulating layer 450, the first conductive layer 460, the fourth insulating layer 470, the array driving layer 500, the thin film transistor 510, the active layer 511, the gate 512, the source 513, the drain 514, the third insulating layer 520, the second conductive layer 530, the third conductive layer 540, the first conductive member 600, the second conductive member 700, and the fifth insulating layer 800. DETAILED DESCRIPTION

[0042] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise specified, the directional words used, such as "upper" and "lower", generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; and "inside" and "outside" refer to the outline of the device.

[0043] Micro LED display technology refers to a display technology that uses self-luminous micron-sized LEDs as light-emitting pixel units and assembles them onto a driving panel to form a high-density LED array. It has the advantages of self-luminescence, high efficiency, low power consumption, high integration, high stability, and all-weather operation.

[0044] Currently, a typical Micro-LED display module typically consists of an array substrate, a Micro-LED device layer, an encapsulation layer, and a cover plate, arranged in order from bottom to top. The manufacturing process is as follows: first, the array substrate is made, then the Micro-LED chips are transferred to the array substrate, and then encapsulated and covered with a cover plate. Micro-LED chips are generally transferred to the array substrate using mass transfer technology, and the Micro-LED chips and array substrate are fixedly connected through an "anisotropic conductive adhesive bonding" process (ACF bonding) or a "metal bonding" process that can form an alloy at low temperature.

[0045] However, these bonding processes all have technical problems such as high process difficulty, low bonding strength between the Micro-LED chip and the array substrate, and low yield. Based on the above technical problems, this application proposes the following solutions.

[0046] See also Figures 1 to 5 , Figure 1 is a schematic diagram of the overall structure of the display panel described in the present application. The present application provides a display panel, comprising a base substrate 100, a light-emitting device layer 300 disposed on the base substrate 100, an encapsulation layer 400 disposed on the light-emitting device layer 300, and an array driving layer 500 disposed on the encapsulation layer 400. The light-emitting device layer 300 comprises a plurality of light-emitting devices 310, each of which is embedded in the encapsulation layer 400. The array driving layer 500 comprises a plurality of thin-film transistors 510 electrically connected to the plurality of light-emitting devices 310.

[0047] In the present application, a plurality of light-emitting devices 310 are directly arranged on the substrate to form a light-emitting device layer 300, and then an encapsulation layer 400 is arranged on the light-emitting device layer 300 so that the light-emitting devices 310 are embedded in the encapsulation layer 400. Then, an array driving layer 500 is arranged on the encapsulation layer 400 so that the thin film transistor 510 is electrically connected to the light-emitting device 310. Compared with the method of transferring the light-emitting chip to the array substrate in a conventional display panel, the light-emitting device 310 in the present application is more firmly bonded to the base substrate 100 and the array driving layer 500, and the manufacturing process can overcome the problems of low binding yield and high technical difficulty in the "anisotropic conductive adhesive binding" process and the "metal binding" process in conventional display panels.

[0048] The technical solutions of this application are now described in conjunction with specific embodiments. Detailed descriptions are given below. It should be noted that the order in which the following embodiments are described does not limit the preferred order of the embodiments.

[0049] See also Figure 2 , Figure 2This is a schematic diagram of the first film layer structure of the display panel described in this application. In this embodiment, the base substrate 100 can be a transparent glass substrate or a polyimide substrate or other base material with good light transmittance, so that the light emitted by the light-emitting device 310 can pass through the base substrate 100 more efficiently, thereby improving the display brightness.

[0050] In this embodiment, the display panel may further include a buffer layer 200 disposed on the surface of the base substrate 100. The light-emitting device layer 300 may be disposed on the buffer layer 200, thereby providing protection for the light-emitting device layer 300 by the buffer layer 200 and reducing the risk of external moisture and air passing through the base substrate 100 and contacting the light-emitting devices 310. The buffer layer 200 may be made of an inorganic insulating material or an organic insulating material. The inorganic insulating material may include at least one of SiOx, SiNx, and the like. The organic insulating material may include at least one of polyimide, acrylic, and the like.

[0051] In this embodiment, the light-emitting device 310 of the light-emitting device layer 300 can be LED, Mini-LED, Micro-LED, OLED, etc. The embodiment of the present application takes Micro-LED as an example for illustration, but does not represent a specific limitation on the type of the light-emitting device 310.

[0052] In this embodiment, the encapsulation layer 400 may be made of a transparent organic insulating material, such as polyimide, acrylic material, etc., to reduce the light loss rate of the light emitting device 310 .

[0053] In this embodiment, the thin film transistor 510 in the array driving layer 500 may be a dual-gate 512 thin film transistor 510 to realize switching and charge storage functions, thereby improving the threshold voltage stability and illumination stability.

[0054] In this embodiment, since the array driving layer 500 is not directly provided on the base substrate 100 but is manufactured in a process subsequent to the encapsulation layer 400, the thin film transistor 510 can be directly electrically connected to the light-emitting device 310 through vias in the process of forming the array driving layer 500. Therefore, there is no need to perform an "anisotropic conductive adhesive bonding" or "metal bonding" process, which reduces the difficulty of the process and improves the bonding strength between the light-emitting device 310 and the array driving layer 500, thereby improving the yield.

[0055] See also Figure 2In the display panel of the present application, the encapsulation layer 400 may include an encapsulation portion 410 that surrounds the light-emitting device 310. The light-emitting device 310 is embedded within the encapsulation portion 410. In this case, the light-emitting device 310 and the transparent encapsulation portion 410 together constitute an independent light-emitting unit. In other words, in this embodiment, the encapsulation of the light-emitting device 310 is also completed while the independent light-emitting unit is being manufactured. Therefore, no additional encapsulation process is required, effectively shortening the display panel manufacturing cycle and improving production efficiency.

[0056] In this embodiment, the cross-sectional dimensions of the encapsulation portion 410 parallel to the base substrate 100 may gradually increase in the direction from the array drive layer 500 to the base substrate 100. In other words, the encapsulation portion 410 on the base substrate 100 may have a truncated pyramid or frustum shape that is "wider at the top and narrower at the bottom," where "wider at the top" means that the orthographic projection area of ​​the end surface of the encapsulation portion 410 closer to the base substrate 100 on the base substrate 100 is larger, and "narrower at the bottom" means that the orthographic projection area of ​​the end surface of the encapsulation portion 410 farther from the base substrate 100 on the base substrate 100 is smaller.

[0057] In this embodiment, since the packaging part 410 is made of a transparent material and has good optical reflection / refraction properties, this embodiment sets the outer shape of the packaging part 410 to a prism or frustum shape that is "wide at the top and narrow at the bottom", so that the "light-emitting unit" formed by the light-emitting device 310 and the packaging part 410 presents a high-light-efficiency structure with a good Taper angle, thereby making the "light-emitting unit" present a better lighting effect.

[0058] See also Figure 2 In the display panel of the present application, the light-emitting device layer 300 may further include a common electrode layer 320 disposed on the base substrate 100, the light-emitting device 310 is disposed on the common electrode layer 320, and the common electrode layer 320 is electrically connected to the common voltage terminal.

[0059] In this embodiment, the common electrode layer 320 may be a transparent conductive film layer, so that the light emitted by the light-emitting device 310 can be reflected through the transparent conductive film layer onto the transparent base substrate 100. The material of the transparent conductive film layer may include indium tin oxide (ITO) material, aluminum-doped zinc oxide (ZnO:Al or AZO) material, etc.

[0060] In this embodiment, taking the light-emitting device 310 as a Micro-LED, the light-emitting device 310 may include a central light-emitting portion 311 and a P electrode 312 and an N electrode 313 disposed on either side of the central light-emitting portion 311. The first end of the light-emitting device 310 may be a positive electrode, i.e., the P electrode 312 of the Micro-LED, and the second end of the light-emitting device 310 may be a negative electrode, i.e., the N electrode 313 of the Micro-LED. The first end of the light-emitting device 310 may be electrically connected to the thin-film transistor 510, and the second end of the light-emitting device 310 may be electrically connected to the common electrode layer 320.

[0061] In this embodiment, the positive electrode of the light-emitting device 310 is electrically connected to the thin film transistor 510, and the negative electrode of the light-emitting device 310 is electrically connected to the common electrode layer 320, so that the data voltage signal transmitted in the thin film transistor 510 is transmitted to the positive electrode of the light-emitting device 310, and the common voltage signal transmitted in the common electrode layer 320 is transmitted to the negative electrode of the light-emitting device 310, thereby providing the light-emitting device 310 with the common voltage required for light emission, thereby realizing the light-emitting function of the light-emitting device 310.

[0062] See also Figure 3 , Figure 3 This is a schematic diagram of the second film layer structure of the display panel described in the present application. In the display panel of the present application, the encapsulation layer 400 may also include a support portion 420 arranged on the base substrate 100, the common electrode layer 320 may cover the surface of the support portion 420, and the light-emitting device 310 may be arranged on the common electrode layer 320 on the support portion 420.

[0063] In other words, this embodiment “raises” the light emitting device 310 by the support portion 420 , thereby effectively reducing light loss caused by direct contact between the light emitting device 310 and the base substrate 100 , and improving the light efficiency of the light emitting device 310 .

[0064] In this embodiment, the support portion 420 can be made of a transparent material, such as transparent polyimide, acrylic material, etc., so that the light emitted by the light-emitting device 310 can directly pass through the support portion 420 and be emitted onto the base substrate 100, avoiding the problem of reduced light output due to obstruction by the support portion 420.

[0065] In this embodiment, in the direction from the light-emitting device 310 to the base substrate 100, the size of the cross section of the support portion 420 parallel to the base substrate 100 can be gradually increased, so that the shape of the support portion 420 can be similar to the shape of the packaging portion 410, thereby achieving a synergistic light effect enhancement effect.

[0066] See also Figure 3 In the display panel of the present application, the common electrode layer 320 may include a first electrode portion 321 disposed on the surface of the support portion 420 and a second electrode portion 322 disposed on the surface of the base substrate 100, wherein the first electrode portion 321 and the second electrode portion 322 are disposed continuously. In other words, in this embodiment, the common electrode layer 320 may be continuously disposed on the surface of the support portion 420 and on the surface of the base substrate 100 surrounding the support portion 420, wherein the common electrode layer 320 disposed on the surface of the support portion 420 is the first electrode portion 321, and the common electrode layer 320 disposed on the surface of the base substrate 100 surrounding the support portion 420 is the second electrode portion 322.

[0067] In this embodiment, at least a portion of the second electrode portion 322 may be in contact with the packaging portion 410 , that is, the packaging portion 410 may be formed on the second electrode portion 322 around the support portion 420 .

[0068] In this embodiment, the packaging portion 410 may only cover a portion of the second electrode portion 322 , so that a redundant portion of the second electrode portion 322 can be left, so as to be electrically connected to the common voltage terminal through a via.

[0069] See also Figure 4 In the display panel of the present application, the encapsulation layer 400 may also include a first insulating layer 430 arranged on the same layer as the encapsulation part 410, a first via 440 arranged between the encapsulation part 410 and the first insulating layer 430, and a second insulating layer 450 arranged on the first insulating layer 430, and the second insulating layer 450 fills the first via 440.

[0070] In this embodiment, the orthographic projection of the first via hole 440 on the base substrate 100 may at least partially overlap with the orthographic projection of the second electrode portion 322 on the base substrate 100 , so that the second electrode portion 322 may be electrically connected to the common voltage terminal by disposing a conductive material in the first via hole 440 .

[0071] In this embodiment, the first insulating layer 430 and the packaging portion 410 may be integrally formed. In a direction perpendicular to the base substrate 100, the height of the side of the first insulating layer 430 away from the base substrate 100 may be the same as the height of the side of the packaging portion 410 away from the base substrate 100. In addition to filling the first via 440, the second insulating layer 450 may also cover the side surfaces of the first insulating layer 430 and the packaging portion 410 away from the base substrate 100, thereby forming a flat surface to facilitate the subsequent fabrication of the array drive layer 500.

[0072] See also Figure 4 In the display panel of the present application, in this embodiment, the encapsulation layer 400 may further include a first conductive layer 460 arranged on the surface of the encapsulation portion 410 and the surface of the second electrode portion 322. The material of the first conductive layer 460 may include but is not limited to an opaque metal conductive material with high reflectivity, such as Au, Cu, Mo, etc.

[0073] Through the above arrangement, the present embodiment enables the first conductive layer 460 to not only electrically connect the common electrode layer 320 to the common voltage terminal, but also the opaque and highly reflective first conductive layer 460 is coated on the surface of the packaging part 410, which can effectively improve the light efficiency of the "light-emitting unit" formed by the light-emitting device 310 and the packaging part 410 and reduce light loss.

[0074] In this embodiment, the second electrode portion 322 can be electrically connected to the common voltage end through the first conductive layer 460, so that the common voltage signal can be transmitted to the first electrode portion 321 through the first conductive layer 460 and the second electrode portion 322, thereby providing a common voltage for the negative electrode of the light-emitting device 310.

[0075] In this embodiment, the first conductive layer 460 may also be located on the interface between the second insulating layer 450 and the first insulating layer 430, the second electrode portion 322, and the packaging portion 410. That is, in addition to covering the surface of the packaging portion 410 and the first via 440, the first conductive layer 460 may also extend to the surface of the first insulating layer 430, so as to facilitate the provision of vias and conductive materials in the array drive layer 500, thereby electrically connecting the first conductive layer 460 on the surface of the first insulating layer 430 to the common voltage terminal.

[0076] See also Figure 5 In the display panel of the present application, the array driving layer 500 may further include a third insulating layer 520 disposed on the second insulating layer 450 , and the thin film transistor 510 is disposed in the third insulating layer 520 .

[0077] Specifically, the active layer 511 of the thin film transistor 510 can be disposed on the surface of the second insulating layer 450, and the two gate electrodes 512 of the thin film transistor 510 can be located within the third insulating layer 520, with the orthographic projections of the gate electrodes 512 on the active layer 511 located within the active layer 511. In the active layer 511, the region corresponding to the gate electrodes 512 is a channel region, and the regions on both sides of the channel region are doped regions. The source electrode 513 and the drain electrode 514 of the thin film transistor 510 are disposed on the surface of the third insulating layer 520, and both the source electrode 513 and the drain electrode 514 of the thin film transistor 510 are electrically connected to the active layer 511 in the doped region through vias.

[0078] See also Figure 5 In this embodiment, a first conductive member 600 electrically connected to the first end of the light-emitting device 310 may be disposed within the third insulating layer 520. The first conductive member 600 may be electrically connected to one of the source electrode 513 or the drain electrode 514 of the thin-film transistor 510. In other words, the first conductive member 600 electrically connecting the thin-film transistor 510 and the positive electrode of the light-emitting device 310 may be disposed within the third insulating layer 520.

[0079] In this embodiment, a notch is provided on the side of the encapsulation portion 410 near the positive electrode of the light-emitting device 310 (the P electrode 312 of the Micro-LED). This notch exposes the positive electrode of the light-emitting device 310 for connection by the first conductive member 600. To further improve the electrical connection stability between the first conductive member 600 and the positive electrode of the light-emitting device 310, a conductive pad layer 411 integrally formed with the first conductive layer 460 may be provided at the location of the notch. The area of ​​the conductive pad layer 411 may be larger than the area of ​​the end face of the first conductive member 600 near the light-emitting device 310, thereby providing a more stable supporting conductive effect.

[0080] In this embodiment, since the conductive pad layer 411 and the first conductive layer 460 are integrally formed, insulation is required between the conductive pad layer 411 and the first conductive layer 460 to prevent short circuits between the conductive pad layer 411 and the first conductive layer 460. In this embodiment, insulation can be achieved by isolating the conductive pad layer 411 from the first conductive layer 460, or by providing an insulating material between the conductive pad layer 411 and the first conductive layer 460.

[0081] See also Figure 5In this embodiment, a second conductive member 700 electrically connected to the common voltage end can also be set in the third insulating layer 520, and the second conductive member 700 is electrically connected to the first conductive layer 460 on the first insulating layer 430 through a via hole set in the third insulating layer 520.

[0082] In this embodiment, the support portion 420, the encapsulation portion 410, the first insulating layer 430, and the second insulating layer 450 may all be made of organic insulating materials, and the third insulating layer 520 may be made of an inorganic insulating material. To reduce the adverse effects of factors such as water and oxygen corrosion and ion migration in the organic insulating material on the active layer 511 of the thin film transistor 510, a fourth insulating layer 470 made of an inorganic insulating material may be disposed between the second insulating layer 450 and the third insulating layer 520. The active layer 511 is disposed on the fourth insulating layer 470. The inorganic insulating material may include at least one of SiOx, SiNx, and the like.

[0083] See also Figure 5 In the display panel of the present application, the array driving layer 500 may further include a fifth insulating layer 800 disposed on the third insulating layer 520, and the display panel may further include a second conductive layer 530 disposed on the fifth insulating layer 800. The second conductive layer 530 may be electrically connected to the source electrode 513 or the drain electrode 514 of the thin film transistor 510 through a via hole, thereby being electrically connected to the positive electrode of the light-emitting device 310.

[0084] It should be noted that the second conductive layer 530 can be used as a data line to be electrically connected to the source 513 / drain 514 of the thin film transistor 510, and the first conductive member 600 is electrically connected to the drain 514 / source 513 of the thin film transistor 510. The second conductive layer 530 and the first conductive member 600 are not connected to the same source 513 or the same drain 514 of the thin film transistor 510 at the same time.

[0085] In this embodiment, the second conductive layer 530 may be a low-resistance conductive metal film layer, such as Cu, Al, Ag, etc. Furthermore, the second conductive layer 530 may be distributed in a planar manner on the surface of the fifth insulating layer 800, thereby effectively reducing signal transmission delay caused by impedance on the data line and improving display effects.

[0086] See also Figure 5In the display panel of the present application, the display panel may further include a third conductive layer 540 disposed on the third insulating layer 520. The third conductive layer 540 may be disposed on the same layer as the second conductive layer 530. The third conductive layer 540 may be electrically connected to the second conductive member 700 through a via hole, and the third conductive layer 540 may be electrically connected to a common voltage terminal.

[0087] In this embodiment, a fifth insulating layer 800 may be further disposed on the second conductive layer 530 and the third conductive layer 540 to protect the second conductive layer 530 and the third conductive layer 540 .

[0088] The present application also provides a method for manufacturing a display panel, which is used to manufacture the display panel described in the above embodiment. The method for manufacturing the display panel may include:

[0089] S100, providing a substrate 100 and a plurality of light-emitting devices 310;

[0090] S200, transferring the plurality of light-emitting devices 310 onto the base substrate 100 to form a light-emitting device layer 300;

[0091] S300, forming an encapsulation layer 400 on the light-emitting device layer 300, so that the light-emitting device 310 is embedded in the encapsulation layer 400;

[0092] S400 , forming an array driving layer 500 including a plurality of thin film transistors 510 on the encapsulation layer 400 , and electrically connecting the thin film transistors 510 to the light emitting devices 310 .

[0093] In this embodiment, the light-emitting device 310 is directly transferred onto the base substrate 100, and the array driving layer 500 is manufactured after the light-emitting device 310 is packaged. This makes the combination of the light-emitting device 310, the base substrate 100, and the array driving layer 500 more firmly established, and overcomes the problems of low binding yield and high technical difficulty in the "anisotropic conductive adhesive binding" process and the "metal binding" process in conventional display panels.

[0094] In this embodiment, the step S200 may include:

[0095] S210, depositing a first layer of inorganic insulating material on the base substrate 100 to form a buffer layer 200;

[0096] S220 , depositing a first layer of organic insulating material on the base substrate 100 , and patterning the layer to form a support portion 420 ;

[0097] S230 , depositing a transparent conductive material on the surface of the support portion 420 , and patterning the material to form a common electrode layer 320 ;

[0098] S240 , transferring the light-emitting device 310 to the common electrode layer 320 on the support portion 420 , and performing inspection and repair to form a light-emitting device layer 300 .

[0099] In this embodiment, the step S300 may include:

[0100] S310, depositing a second layer of organic insulating material on the light-emitting device layer 300, and patterning the layer to form an encapsulation portion 410, a first via hole 440 and a first insulating layer 430;

[0101] S320 , depositing an opaque highly reflective conductive material on the packaging portion 410 and the first insulating layer 430 to form a first conductive layer 460 ;

[0102] S330 , depositing a third layer of organic insulating material on the first conductive layer 460 to form a second insulating layer 450 covering the first insulating layer 430 and the encapsulation portion 410 and filling the first via hole 440 ;

[0103] S340 , depositing a second layer of inorganic insulating material on the third insulating layer 520 to form a fourth insulating layer 470 .

[0104] In this embodiment, the step S400 may include:

[0105] S410 , forming an active material on the fourth insulating layer 470 , and patterning the active layer 511 of the thin film transistor 510 ;

[0106] S420, depositing a third layer of inorganic insulating material on the active layer 511 and the fourth insulating layer 470 multiple times to form a third insulating layer 520, and forming two gate electrodes 512 of the thin film transistor 510 in this process;

[0107] S430 , patterning the third insulating layer 520 to form the source 513 and the drain 514 of the thin film transistor 510 , as well as the first conductive member 600 and the second conductive member 700 ;

[0108] S440 , depositing a fourth layer of organic insulating material on the third insulating layer 520 to form a fifth insulating layer 800 ;

[0109] S450 , depositing a low-resistance conductive material on the fifth insulating layer 800 , and patterning the material to form a second conductive layer 530 and a third conductive layer 540 .

[0110] The present application forms a light-emitting device layer 300 by directly placing a plurality of light-emitting devices 310 on the substrate, and then placing an encapsulation layer 400 on the light-emitting device layer 300 so that the light-emitting devices 310 are embedded in the encapsulation layer 400. Then, an array drive layer 500 is placed on the encapsulation layer 400 so that the thin film transistor 510 is electrically connected to the light-emitting device 310. Compared with the method of transferring the light-emitting chip to the array substrate in a conventional display panel, the light-emitting device 310 in the present application is more firmly bonded to the base substrate 100 and the array drive layer 500. Moreover, the manufacturing process can overcome the low yield rate and high technical difficulty of the "anisotropic conductive adhesive bonding" process and the "metal bonding" process in conventional display panels. Moreover, in the present application, while the light-emitting device 310 is made into an independent light-emitting unit, the light-emitting device 310 can also be packaged and good light efficiency can be achieved without the need for an additional packaging process, effectively shortening the process cycle of the display panel and improving production efficiency.

[0111] The above is a detailed introduction to a display panel and a manufacturing method thereof provided in an embodiment of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for technical personnel in this field, based on the ideas of the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A display panel, characterized in that: include: substrate; A light-emitting device layer is provided on the base substrate, and the light-emitting device layer includes a plurality of light-emitting devices; an encapsulation layer, disposed on the light-emitting device layer, wherein a plurality of the light-emitting devices are embedded in the encapsulation layer; as well as an array driving layer, disposed on the encapsulation layer, the array driving layer comprising a plurality of thin film transistors electrically connected to the plurality of light emitting devices; The encapsulation layer includes an encapsulation portion covering the periphery of the light-emitting device; the encapsulation layer also includes a first insulating layer provided on the same layer as the encapsulation portion, a first via hole provided between the encapsulation portion and the first insulating layer, and a second insulating layer provided on the first insulating layer, wherein the second insulating layer fills the first via hole; Wherein, in the direction from the array driving layer to the base substrate, the size of the cross section of the packaging portion parallel to the base substrate gradually increases.

2. The display panel according to claim 1, wherein: The light emitting device layer further comprises a common electrode layer provided on the base substrate, and the light emitting device is provided on the common electrode layer; Wherein, the first end of the light emitting device is electrically connected to the thin film transistor, and the second end of the light emitting device is electrically connected to the common electrode layer.

3. The display panel according to claim 2, wherein: The encapsulation layer further includes a support portion provided on the base substrate, and the common electrode layer covers a surface of the support portion; Wherein, the support portion and the common electrode layer are made of transparent materials.

4. The display panel according to claim 3, wherein: The common electrode layer includes a first electrode portion provided on the surface of the support portion and a second electrode portion provided on the surface of the base substrate, wherein the first electrode portion and the second electrode portion are provided continuously; At least a portion of the second electrode portion is in contact with the packaging portion, and the second electrode portion is electrically connected to a common voltage terminal.

5. The display panel according to claim 4, wherein: The encapsulation layer further includes a first conductive layer provided on a surface of the encapsulation portion and a surface of the second electrode portion; The second electrode portion is electrically connected to the common voltage terminal through the first conductive layer, and the first conductive layer is insulated from the first end of the light emitting device.

6. The display panel according to claim 5, wherein: The first conductive layer is located on an interface between the second insulating layer, the first insulating layer, the second electrode portion, and the packaging portion.

7. The display panel according to claim 6, wherein: The array driving layer further includes a third insulating layer disposed on the second insulating layer, and the thin film transistor is disposed in the third insulating layer; In which, the third insulating layer is provided with a first conductive member electrically connected to the first end of the light-emitting device and a second conductive member electrically connected to the first conductive layer, the first conductive member is electrically connected to the source or drain of the thin film transistor, and the second conductive member is electrically connected to the common voltage end.

8. The display panel according to claim 7, wherein: The display panel further includes a second conductive layer disposed on the array driving layer; The second conductive layer is electrically connected to the source or drain of the thin film transistor, and the second conductive layer is electrically connected to the first end of the light emitting device through the thin film transistor.

9. A method for manufacturing a display panel, characterized in that: The manufacturing method is used to manufacture the display panel according to any one of claims 1 to 8, and the manufacturing method comprises: Providing a substrate and a plurality of light-emitting devices; transferring the plurality of light-emitting devices onto the base substrate to form a light-emitting device layer; forming an encapsulation layer on the light-emitting device layer so that the light-emitting device is embedded in the encapsulation layer; An array driving layer including a plurality of thin film transistors is formed on the encapsulation layer, and the thin film transistors are electrically connected to the light emitting devices.

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