A single-crystal optical fiber with tunable doped ion distribution and its growth method
By using a single-crystal fiber growth method that modulates the distribution of doped ions, the problem of uneven heat distribution caused by uneven pump light energy absorption was solved, thereby improving the output power and beam quality of the laser and reducing thermal lensing effect and thermal damage.
CN116184562BActive Publication Date: 2026-03-06SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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Patent Information
- Application Number
- CN202310124559.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-02-16
- Publication Date
- 2026-03-06
- Estimated Expiration
- 2043-02-16
AI Technical Summary
Technical Problem
In traditional uniformly doped laser crystals, uneven absorption of pump light energy leads to uneven heat distribution, which limits the output power and beam quality of the laser, and causes severe thermal lensing and thermally induced birefringence.
Method used
By designing a single-crystal fiber growth method with tunable dopant ion distribution, and using laser heating of the substrate, the distribution of dopant ions can be controlled to ensure uniform absorption of pump light along the pump direction, thereby reducing the temperature gradient.
Benefits of technology
It effectively reduces the thermal lensing effect and thermal damage during high-power laser processes, and improves the output power and beam quality of the laser.
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Abstract
This invention relates to a method for growing a single-crystal optical fiber with a tunable distribution of doped ions, comprising: (1) selecting a crystal or ceramic with a uniform doped ion concentration of n at% and cutting a homogeneous crystal or ceramic without doped ions into square rods, and then cutting, polishing and splicing them according to the tangent designed on the side to obtain a first source rod; (2) using a crystal or ceramic without doped ions as a seed crystal, fixing the obtained source rod in a laser-heated base single-crystal optical fiber growth furnace, and performing a first forward growth of the single-crystal optical fiber using the laser-heated base method; (3) using the single-crystal optical fiber grown in the first forward growth as a second source rod for a first reverse growth; (4) using the single-crystal optical fiber grown in the first reverse growth as a third source rod for a second forward growth; (5) using the single-crystal optical fiber grown in the second forward growth as a fourth source rod for a second reverse growth to obtain the single-crystal optical fiber with a tunable distribution of doped ions.
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