Dual-band microstrip combined antenna

Abstract

The application provides a dual-frequency microstrip combined antenna and relates to the technical field of terahertz antennas. The dual-frequency microstrip combined antenna comprises a dielectric substrate, a metal radiation patch layer arranged on the dielectric substrate, a pair of center-symmetrically arranged bowtie antennas and a pair of circular patch antennas, the circular patch antennas being connected to one end of the bowtie antennas close to the center of symmetry, and a feeding area arranged at the center of symmetry of the bowtie antennas. Through the combination of the bowtie antennas and the circular patch antennas, the original current distribution of the antenna is changed, the working frequency band of the antenna is widened, resonance points can be formed in multiple frequency bands, and the problems of low return loss and small gain of the existing antenna are solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of terahertz antennas, in particular to a dual-frequency microstrip combined antenna. BACKGROUND

[0002] With the rise of cloud computing, the Internet of Things and mobile Internet, the communication traffic has increased dramatically, and under the situation that the existing low-frequency band resources of wireless communication are becoming increasingly scarce, the contradiction between communication capacity and business demand is intensifying, so we urgently need to expand the frequency spectrum band of wireless communication carriers. When the minimum bandwidth reaches tens of gigahertz, higher carrier frequencies must be used in the terahertz band range. The terahertz band refers to electromagnetic waves with a frequency in the range of 100GHz-10THz, between the microwave and infrared bands, with abundant spectrum resources, combining the characteristics of microwaves and light waves. The terahertz communication technology related thereto has the advantages of ultra-large working bandwidth and ultra-high communication rate.

[0003] In 2019, the World Radio Communication Conference officially determined that the 275GHz-296GHz, 306GHz-313GHz, 318GHz-333GHz and 356GHz-450GHz frequency bands have a total bandwidth of 137GHz, which can be used for fixed and land mobile business applications without restrictions. This is the first time that the international community has explicitly defined the available spectrum resources for terahertz frequency bands above 275GHz for ground-based active radio business applications, and has increased the upper limit of available spectrum resources to 450GHz, providing basic resource support for global terahertz industry development and application.

[0004] The microwave photonics terahertz communication system based on the photoelectric combination method can fully utilize the large bandwidth advantage of the terahertz band, combine optical fiber broadband communication with wireless communication, and is likely to become the core technology of future photoelectric integrated high-speed networks; the optical mixer is a key element of the system, used to realize photoelectric conversion and emit high-gain terahertz signals. Whether it can emit high-gain terahertz signals is an important indicator of the performance of the system. Therefore, we need a terahertz microstrip antenna that can be directional, efficient and have a high working bandwidth working in the 275GHz-450GHz band. At present, the commonly used terahertz microstrip antenna for the 275GHz-450GHz working frequency band is relatively rare, and the existing antenna has low return loss and small gain. SUMMARY

[0005] (I) Technical problems to be solved

[0006] In view of the above problems, the application provides a dual-frequency microstrip combined antenna, which changes the original current distribution of the antenna, widens the working frequency band of the antenna, can form resonance points in multiple frequency bands, and solves the problems of low return loss and small gain of the existing antenna.

[0007] (II) Technical solutions

[0008] An aspect of the application provides a dual-frequency microstrip combined antenna, which comprises a dielectric substrate, a metal radiation patch layer arranged on the dielectric substrate, a pair of center-symmetrically arranged bowtie antennas and a pair of circular patch antennas, the circular patch antennas being connected to one end of the bowtie antennas close to the center of symmetry, and a feeding area arranged at the center of symmetry of the bowtie antennas.

[0009] In an embodiment of the application, the bowtie antennas comprise a rectangular antenna and an isosceles trapezoidal antenna; the rectangular antenna is arranged at one end of the long base of the isosceles trapezoidal antenna, the isosceles trapezoidal antenna is arranged at one end close to the feeding area, the base of the isosceles trapezoidal antenna close to the feeding area is smaller than the base of the isosceles trapezoidal antenna away from the feeding area, and the circular patch antennas are connected to the side waists of the isosceles trapezoidal antennas.

[0010] In an embodiment of the application, the circular patch antennas are connected to the side waists of the isosceles trapezoidal antennas through microstrip lines, and the side of the circular patch antennas connected to the microstrip lines is tangent to the microstrip lines.

[0011] In an embodiment of the application, the connection of the circular patch antennas to the bowtie antennas is located outside the feeding area, and the feeding area of the circular patch antennas coincides with the feeding area of the bowtie antennas.

[0012] In an embodiment of the application, the feeding area comprises a square surface excitation source.

[0013] In an embodiment of the application, the area of the metal radiation patch layer is larger than the area of the dielectric substrate.

[0014] In an embodiment of the application, the dielectric substrate comprises a substrate and a silicon dioxide dielectric layer, wherein the substrate comprises an indium phosphide layer; and the silicon dioxide dielectric layer is an insulating layer.

[0015] In an embodiment of the application, the material of the metal radiation patch layer comprises gold.

[0016] In an embodiment of the application, the thickness of the metal radiation patch layer is 200nm-1000nm.

[0017] In an embodiment of the application, the radius of the circular patch antenna is 10um-30um.

[0018] (III) Advantages

[0019] The dual-frequency microstrip combined antenna provided by the embodiment of the present application has at least the following beneficial effects:

[0020] The dual-frequency microstrip combined antenna provided by the embodiment of the present application changes the original current distribution of the antenna, widens the working frequency band of the antenna, can form resonance points in multiple frequency bands, greatly improves the performance of the antenna, and meets the dual-band working requirements of the antenna in the terahertz frequency band. BRIEF DESCRIPTION OF DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed to be used in the embodiments or the prior art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor on the basis of these drawings.

[0022] Figure 1 The structure diagram of the metal radiation patch layer of the dual-frequency microstrip combined antenna provided by the embodiment of the present application is schematically shown.

[0023] Figure 2 The return loss (reflection coefficient) simulation diagram of the dual-frequency microstrip combined antenna provided by the embodiment of the present application is schematically shown.

[0024] Figure 3 The magnetic surface (H plane-xoz profile) and electric surface (E plane-yoz profile) radiation directivity diagram of the dual-frequency microstrip combined antenna provided by the embodiment of the present application is schematically shown.

[0025] Figure 4 The magnetic surface (H plane) and electric surface (E plane) 3D radiation directivity diagram of the dual-frequency microstrip combined antenna provided by the embodiment of the present application is schematically shown.

[0026]

LIST OF REFERENCE NUMERALS

[0027] 1-knot antenna; 11-rectangular antenna; 12-isosceles trapezoidal antenna;

[0028] 2-circular patch antenna;

[0029] 3-feeding area;

[0030] 4-microstrip line. DETAILED DESCRIPTION

[0031] In order to make the objects, technical solutions and advantages of the present application clearer, the following further describes the present application with reference to the embodiments and the accompanying drawings. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort should fall within the scope of the present application. The terms used herein are only used to describe the specific embodiments, and are not intended to limit the present application. The terms "comprise", "contain", and the like as used herein indicate the presence of the stated features, steps, operations and / or components, but do not exclude the presence or addition of one or more other features, steps, operations or components.

[0032] In the present application, unless otherwise explicitly specified and limited, the terms "mount", "connect", "connect", "fix", and the like should be understood broadly, for example, can be fixedly connected, or can be detachably connected, or integrated; can be mechanically connected, or electrically connected or can communicate with each other; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0033] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "longitudinal", "length", "circumferential", "front", "back", "left", "right", "top", "bottom", "inner", "outer" and the like is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the subsystems or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be understood as limiting the present application.

[0034] Throughout the drawings, the same elements are denoted by the same or similar reference numerals. When it may cause confusion in understanding the present application, the conventional structure or configuration will be omitted. And the shape, size, positional relationship of the components in the drawings do not reflect the true size, proportion and actual positional relationship. In addition, in the claims, any reference symbol located between parentheses should not be construed as a limitation on the claims.

[0035] Similarly, to the extent that the foregoing description contains example of the application, along with those described in the remaining disclosures herein, it is to be understood that the same are intended to be illustrative only and in no way limit the remaining disclosures as these pertain only to separate inventive aspects. Also, to the extent that the preceding description contains examples, in whole or in part, that do not pertain to the same field of use, or function, and / or operation, then such should be viewed as separate embodiments and / or aspects of the various non- limiting aspects described herein and textual recitations made therein.

[0036] In addition, the terms "first", "second", and the like, do not denote any

[0037] Figure 1 The structure of the metal radiating patch layer of the dual-band microstrip combined antenna is shown schematically.

[0038] As shown in Figure 1 The dual-band microstrip combined antenna provided by the first embodiment of the application can include a dielectric substrate, a metal radiating patch layer, and a feeding region 3.

[0039] The metal radiating patch layer is arranged on the dielectric substrate and includes a pair of center-symmetrically arranged bowtie antennas 1 and a pair of circular patch antennas 2, with the circular patch antennas 2 connected to one end of the bowtie antennas 1 close to the center of symmetry.

[0040] As a preferred embodiment, in this embodiment, the thickness of the metal radiating patch layer can be, for example, 200 nm to 1000 nm, and the radius of the circular patch antennas 2 can be, for example, 10 um to 30 um.

[0041] It should be understood that the sizes and values in the above structure are only exemplary and do not limit the application.

[0042] The feeding region 3 is arranged at the center of symmetry of the bowtie antennas 1.

[0043] The double-frequency microstrip combined antenna provided by the embodiment of the present application changes the original current distribution of the antenna, widens the working frequency band of the antenna, can form resonance points in multiple frequency bands, greatly improves the performance of the antenna, and meets the double-band working requirements of the antenna in the terahertz frequency band.

[0044] On the basis of the above embodiment, the bowtie antenna 1 comprises a rectangular antenna 11 and an isosceles trapezoidal antenna 12, the rectangular antenna 11 is arranged at one end of the long base of the isosceles trapezoidal antenna 12, the isosceles trapezoidal antenna 12 is arranged at one end close to the feeding area 3, the base of the isosceles trapezoidal antenna 12 close to one end of the feeding area 3 is smaller than the base of the isosceles trapezoidal antenna 12 away from one end of the feeding area 3; and the circular patch antenna 2 is connected to the side waist of the isosceles trapezoidal antenna 12. As a preferred embodiment, in the present embodiment, the width of the rectangular antenna 11 can be 150 um for example, and the length of the rectangular antenna 11 can be 300 um for example; the lower base (i.e. the long base) of the isosceles trapezoidal antenna 12 can be 150 um for example, the upper base (i.e. the base of the isosceles trapezoidal antenna close to one end of the feeding area) of the isosceles trapezoidal antenna 12 can be 10 um for example, and the height of the isosceles trapezoidal antenna 12 can be 70 um for example. The above parameters are for the wave band of 250 GHz-500 GHz.

[0045] It should be understood that the sizes and values in the above structure are only exemplary and do not limit the present application.

[0046] On the basis of the above embodiment, the circular patch antenna 2 is connected to the side waist of the isosceles trapezoidal antenna 12 through the microstrip line 4, and the side of the circular patch antenna 2 connected with the microstrip line 4 is tangent to the microstrip line 4.

[0047] On the basis of the above embodiment, the connection between the circular patch antenna 2 and the bowtie antenna 1 is located outside the feeding area 3, and the feeding area 3 of the circular patch antenna 2 coincides with the feeding area 3 of the bowtie antenna 1. The feeding area 3 can be a square face excitation source with a size of 20*20 um for example. 2 The output signal of the photodetector is input by the square face excitation source and radiated to the two antennas.

[0048] On the basis of the above embodiment, the area of the metal radiation patch layer is greater than the area of the dielectric substrate, the dielectric substrate comprises a substrate and a silicon dioxide dielectric layer, wherein the substrate comprises an indium phosphide layer, and the silicon dioxide dielectric layer is an insulating layer. As a preferred embodiment, in the present embodiment, the overall thickness of the substrate can be 350-400 um for example, the dielectric constant of the indium phosphide can be 10.8 for example, there is about 400 nm of silicon dioxide on the surface of the indium phosphide layer, and the dielectric constant of the silicon dioxide can be 3.9 for example.

[0049] Based on the above embodiments, the material of the metal radiating patch layer can be, for example, gold (Au). The body of the dual-band microstrip antenna can also be equipped with electrodes for testing. These test electrodes are connected to the short side of the rectangular antenna body via lead electrodes. Both the dual-band microstrip antenna body and the lead electrodes can be made of gold. The size of the test electrodes ranges from 50×50μm to 200×200μm; the length of the lead electrodes connected to the bowtie antenna 1 can be, for example, around 1000μm, and the linewidth can be, for example, around 20μm.

[0050] Establish a coordinate axis with the center of symmetry of bowtie antenna 1 as the coordinate center, from Figure 1 Looking at the directions shown, the X-axis is the direction of the long side of the right bowtie antenna 1, the Y-axis is the direction along the microstrip line 4 pointing to the circular patch antenna 2, and the Z-axis is the direction perpendicular to the plane of the metal radiating patch layer and pointing away from the dielectric plane layer.

[0051] The connection point between the microstrip line 4 and the isosceles trapezoidal antenna 12 can be, for example, at (10μm, 10μm) and (20μm, 20μm). The width M of the microstrip line 4 can be, for example, 10μm, and the length H can be, for example, 150μm. The center coordinates of the circular patch antenna 2 on the left can be, for example, (-35μm, 130μm), and the center coordinates of the circular patch antenna 2 on the right can be, for example, (35μm, 130μm). The radii R of both circular patch antennas 2 can be, for example, 20μm each. The above parameters are for the 250GHz to 500GHz band.

[0052] Figure 2 The diagram illustrates a simulation of the return loss (reflection coefficient) of the dual-frequency microstrip combined antenna provided in an embodiment of the present invention.

[0053] like Figure 2 As shown, the structure of the dual-band microstrip combined antenna provided in this embodiment of the invention was simulated and improved using simulation software. The influence of key parameters on the performance of the dual-band microstrip combined antenna was studied and analyzed. Further optimization of the antenna performance was achieved through parameter scanning. Typically, an antenna requires a reflection coefficient S11 less than -10dB, meaning a return loss greater than 10dB, indicating minimal signal energy reflection. The S11 parameter of the dual-band microstrip combined antenna provided in this embodiment of the invention is below -10dB. Within the range of 250GHz to 500GHz, there are two distinct absorption peaks (i.e., resonant points): Resonant point 1 is at 277GHz with a reflection coefficient S11 of -33dB; Resonant point 2 is at 457GHz with a reflection coefficient of -18dB.

[0054] Figure 3The magnetic plane (H plane-xoz section) and the electric plane (E plane-yoz section) radiation directivity diagram of the dual-frequency microstrip combined antenna provided by the embodiment of the application is schematically shown.

[0055] Figure 4 The 3D radiation directivity diagram of the magnetic plane (H plane) and the electric plane (E plane) of the dual-frequency microstrip combined antenna provided by the embodiment of the application is schematically shown.

[0056] As shown in Figure 3 and Figure 4 The maximum gain of the antenna at 277 GHz is 7.9 dB. Among them, the E plane refers to the plane determined by the electric field and the beam pointing direction of the maximum beam pointing direction, i.e., the gain direction, of the dual-frequency microstrip combined antenna, and the H plane refers to the plane determined by the magnetic field and the beam pointing direction of the maximum beam pointing direction, i.e., the gain direction, of the dual-frequency microstrip combined antenna.

[0057] The dual-frequency microstrip combined antenna provided by the embodiment of the application changes the original current distribution of the antenna by the combination of the bowtie antenna 1 and the circular patch antenna 2, widens the working frequency band of the antenna, can form a resonance point in multiple frequency bands, and greatly improves the performance of the antenna. The return loss and gain performance of the dual-frequency microstrip combined antenna are good, and the dual-frequency band working requirements of the antenna in the terahertz frequency band can be met.

[0058] Although the present application has been illustrated and described in detail in the drawings and the foregoing description, such illustration and description are to be considered illustrative or exemplary only and not restrictive.

[0059] Those skilled in the art can understand that the features described in various embodiments and / or claims of the present application can be combined in various ranges and / or combined, even if such combinations or combinations are not explicitly described in the present application. In particular, the features described in various embodiments and / or claims of the present application can be combined in various combinations and / or combinations without departing from the spirit and teachings of the present application. All these combinations and / or combinations fall within the scope of the present application.

[0060] Although the present application has been shown and described in detail in reference to certain exemplary embodiments thereof, those skilled in the art should understand that various changes in form and detail can be made therein without departing from the spirit and scope of the application as defined by the appended claims and equivalents thereof. Therefore, the scope of the present application should not be limited to the above-described embodiments, but should be determined only by the appended claims, and should be defined by equivalents of the appended claims.

Claims

1. A dual-frequency microstrip combined antenna, characterized by, The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer.

2. The dual-frequency microstrip combined antenna according to claim 1, characterized in that, The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer.

3. The dual-frequency microstrip combined antenna according to claim 1, wherein, The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer.

4. The dual-frequency microstrip combined antenna according to claim 1, wherein, The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer.

5. The dual-band microstrip combined antenna according to claim 1, wherein, The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer.

6. The dual-band microstrip combined antenna according to claim 1, wherein, The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer.

7. The dual-band microstrip combined antenna according to claim 1, wherein, The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal radiation patch layer, a medium substrate and a method for manufacturing the metal radiation patch layer. The application relates to a metal

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