A multi-component oxide-doped indium zinc oxide target material, a method for preparing the same, and an application thereof

Abstract

The application discloses a kind of multi-element oxide doped indium zinc oxide target material and preparation method and application thereof, and the doped indium zinc oxide target material of the application includes the following mass percentage components: the content of indium oxide is 80.0%~88.6%;The content of zinc oxide is 10.9%~15.8%, the content of strontium oxide is 0.2%~1.8%, the content of bismuth oxide is 0.2%~0.6%, the content of vanadium oxide is 0.4%~1.2%, and the sum of each component is 100%.The target material is prepared by adding strontium oxide, bismuth oxide and vanadium oxide powder, mixing ball milling, pressing forming and sintering, the density of the target material is improved, the resistivity of the target material is reduced, the grain size of the sintered target material is uniform, the strength of the target material is improved, and the performance of the target material is effectively improved.The electrical stability of the thin film and the thin film mobility are effectively improved by sputtering the prepared multi-element oxide doped IZO target material.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of target materials, in particular to a multi-element oxide doped indium zinc oxide target material and a preparation method and application thereof. BACKGROUND

[0002] The target material used in the field of display panels is deposited on a substrate by magnetron sputtering to form a thin film transistor (TFT), and the thin film transistor is an important electronic component in a panel display, which functions as a current switch, and the performance of the component determines the quality of the panel display. The panel display has a more stringent requirement for the material of the active layer (channel layer) in the TFT component, and the target material is a key material for sputtering the active layer film. Whether the performance of the target material is excellent determines the quality of the thin film component.

[0003] The channel layer material film in the TFT conducts electrons due to oxygen vacancy defects, so the thin film with more oxygen vacancies has a high carrier concentration. Although the binary oxide indium zinc oxide (IZO) thin film has a high mobility, the carrier concentration is too high due to the large number of oxygen vacancies, which is easily affected by the self-luminescence of the LCD backlight or OLED when the component is turned on for a long time, resulting in poor electrical stability. Therefore, the IZO thin film is not suitable for preparing the channel layer material of the TFT. In addition, the oxide semiconductor thin film (IGZO, IZO) is particularly sensitive to blue light. The blue light ionizes the oxygen vacancies of the oxide semiconductor to generate photo-generated carriers. Under the same gate voltage, the carrier concentration increases, which easily causes the threshold voltage to be negatively shifted, and the electrical performance of the component is unstable. There have been many studies on rare earth element doped IZO targets at home and abroad. Because some rare earth elements can form strong ionic bonds with oxygen, they can bind oxygen atoms when doped into IZO, reducing the oxygen vacancy defects in the thin film. However, the effect is still limited, and the electrical stability of the thin film still needs to be improved. In addition, the rare earth doped IZO thin film still has insufficient mobility. In addition, the rare earth doped IZO target prepared at the present stage generally has three phases in the microstructure, and multiple phases mean that the uniformity of the thin film is affected after sputtering and plating of the target.

[0004] Another parameter for characterizing the excellent performance of the target material is the density of the target material. When the target material has high density, the gas pressure in the equipment cavity is more stable during sputtering of the thin film, the quality of the sputtered thin film is better, the composition and structure of the thin film are more uniform, and the target material with high density has lower resistivity, which improves the electrical performance of the target material. However, the density of the doped IZO target prepared by the current mainstream target material preparation technology still cannot reach a high degree of densification, and the target material prepared by the conventional sintering method has problems such as uneven internal structure, abnormal grain growth and low strength. In addition, the conventional sintering method also has problems such as high energy consumption and high production cost.

[0005] Therefore, it is necessary to develop a new IZO target to meet the performance required by the target: first, the doped IZO film after sputtering of the developed target can effectively inhibit oxygen vacancy defects and significantly improve the electrical stability of the film device; second, the target has high density, the porosity is significantly reduced, and the microstructure phase structure of the sintered target is single phase; third, the internal organization grain of the target is uniform. SUMMARY

[0006] The present application aims to solve one of the technical problems of the target in the prior art mentioned above. To this end, the first aspect of the present application provides a multi-oxide doped indium zinc oxide target. The thin film after sputtering of the indium zinc oxide target of the present application can effectively inhibit oxygen vacancy defects, significantly improve the electrical stability of the film device, and improve the mobility of the film; the target has high density, low porosity, and the microstructure phase structure is single phase; the multi-oxide doped indium zinc oxide target has uniform internal organization grain and high target strength.

[0007] The second aspect of the present application further provides a preparation method of a multi-oxide doped indium zinc oxide target.

[0008] The third aspect of the present application further provides an application of a multi-oxide doped indium zinc oxide target.

[0009] The fourth aspect of the present application further provides a transparent conductive oxide film.

[0010] According to the first aspect of the present application, a multi-oxide doped indium zinc oxide target is provided, which comprises the following components by mass percentage:

[0011] The content of indium oxide is 80.0% to 88.6%; the content of zinc oxide is 10.9% to 15.8%, the content of strontium oxide is 0.2% to 1.8%, the content of bismuth oxide is 0.2% to 0.6%, and the content of vanadium oxide is 0.4% to 1.2%, and the sum of each component is 100%.

[0012] According to the multi-oxide doped indium zinc oxide (IZO) target of the embodiment of the present application, at least the following beneficial effects are achieved:

[0013] The electrical properties of the target material are improved by adding strontium oxide as an oxygen vacancy inhibitor, thereby improving the electrical stability of the sputtered film. The melting point of strontium oxide is 2400℃, and it has a strong metal-oxygen ionic bond, which can effectively bind oxygen atoms and reduce oxygen vacancy defects, thereby significantly improving the electrical stability of the sputtered film. Bismuth oxide is added as a sintering aid to promote the sintering reaction. The melting point of bismuth oxide is only 860℃, which is lower than the melting points of indium oxide and zinc oxide. Based on this, bismuth oxide can perform liquid phase reaction during sintering. The sintering liquid phase reaction greatly increases the fluidity between particles, and the material migration rate is faster than that of solid phase reaction. The liquid phase can fill the pores in the body, effectively eliminating the pores in the target material, and significantly improving the density of the target material. Vanadium oxide is added as a substitutional solid solution. The ionic radius of vanadium element is only 0.059 nm, which is much smaller than the ionic radii of indium ions and zinc ions. Vanadium element can be completely solid-solved in the target material, form a single phase with indium oxide and zinc oxide in the microstructure, avoid the generation of secondary phase, and improve the composition uniformity of the sputtered film after sputtering and plating. The outermost electron of vanadium element is 3d 3 4s 2 , as a high-valence element, doped into IZO, provides more free carriers, improves the doping efficiency, and has a high carrier concentration at a low doping concentration, thereby improving the mobility of the film. 3+

[0014] According to some embodiments of the present application, the specific surface area of the strontium oxide, bismuth oxide and vanadium oxide is independently selected from 10m 2 / g to 18m 2 / g.

[0015] According to some embodiments of the present application, the D50 particle size of the strontium oxide is ≤3 μm.

[0016] According to some embodiments of the present application, the D50 particle size of the bismuth oxide is ≤3 μm.

[0017] According to some embodiments of the present application, the D50 particle size of the vanadium oxide is ≤3 μm.

[0018] According to some embodiments of the present application, the D50 particle size of the vanadium oxide is ≤3 μm.

[0019] S2, the doped indium zinc oxide powder is pressed into a shape;

[0020] S3, the doped indium zinc oxide target material obtained by pressing is sintered to obtain

[0021] ​According to some embodiments of the present application, the sintering comprises ultrasonic sintering. Further, the present application uses ultrasonic sintering technology, which can make the target material inside be heated uniformly, the growth rate between the target material grains be uniform, the target material grains be uniform in size, and the problem of abnormal grain growth be avoided. Due to the fine grain strengthening effect, the strength of the target material is also obviously improved.

[0022] According to some embodiments of the present application, the ultrasonic sintering has an ultrasonic frequency of 1-25 MHz, and the sintering has a temperature of 1000-1200 DEG C. Thus, the ultrasonic sintering technology has a lower sintering temperature, and the temperature range is between 1000 DEG C and 1200 DEG C. The sintering densification process of the target material can be completed at a low temperature, the energy consumption cost is reduced, and the service life of the sintering equipment is prolonged.

[0023] The IZO target material prepared by doping the multi-element oxide powder and the ultrasonic sintering technology has a density of more than 99.0%, the porosity of the target material is obviously reduced, the microstructure grain size is uniform, the grain size is less than or equal to 10.5 um, the metallographic analysis is single-phase structure, the sputtering film composition is more uniform, the film mobility is greater than 47 cm 2 / V·s, the electrical stability is better, the target material resistivity is smaller, the resistivity is less than or equal to 7 mΩ·cm, the sintered target material strength is greater, and the bending strength is greater than or equal to 133 MPa.

[0024] According to some embodiments of the present application, the ball milling process uses a front-rear stage mixed grinding method. By using the above technical solution, the multi-element oxide powder is ground by using zirconium beads of different sizes in the front stage and the rear stage, so that the powders can be uniformly mixed, and the uniformity of the target material composition distribution is improved. In addition, the particle size distribution of the powder is also optimized, so that the powder is more easily formed.

[0025] According to some embodiments of the present application, the ultrasonic sintering has a heating rate of 10-20 DEG C / min.

[0026] By using the above technical solution, the ultrasonic sintering furnace is used to replace the conventional atmospheric high-temperature sintering. The sintering temperature can be reduced to 1000-1200 DEG C, the volatilization of indium oxide and zinc oxide is reduced, the holes in the target material are reduced as much as possible, and the density of the target material is improved. In addition, the ultrasonic sintering can uniformly heat the particles inside the target material, the growth rate between the grains is uniform, the microstructure is more uniform, the film composition after sputtering is uniform, and the performance is better. The target material is uniformly heated, the grain size is consistent, the problem of abnormal grain growth caused by conventional high-temperature sintering is avoided, and the strength of the target material is improved due to the fine grain strengthening. The ultrasonic sintering technology has a fast target material sintering rate, can be prepared at a low temperature, reduces the energy consumption and production cost.

[0027] According to some embodiments of the present invention, the loose bulk density of the indium oxide, zinc oxide, and strontium oxide is independently selected from 1.10 g / cm³. 3 ~1.65g / cm 3 .

[0028] According to some embodiments of the present invention, the molding pressure of the compression molding is 120-350 MPa.

[0029] According to some embodiments of the present invention, the adhesive includes at least one of PVA, polyacryl alcohol, polyvinyl chloride, and hydroxypropyl methylcellulose.

[0030] According to some embodiments of the present invention, the plasticizer includes at least one of PEG and polyvinyl alcohol.

[0031] A third aspect of the present invention provides an application of the aforementioned multi-element oxide doped indium zinc oxide target in TFT devices in the display field.

[0032] A fourth aspect of the present invention provides a transparent conductive oxide thin film, comprising a multi-element oxide doped indium zinc oxide target as described above.

[0033] According to some embodiments of the present invention, the transparent conductive oxide thin film is prepared by the following method:

[0034] The aforementioned multi-element oxide-doped IZO target was sputtered onto the substrate using magnetron sputtering to deposit a transparent conductive oxide thin film.

[0035] According to some embodiments of the present invention, the sputtering coating is performed by DC magnetron sputtering.

[0036] According to some embodiments of the present invention, the power of the sputtering coating is set to 30-300W.

[0037] According to some embodiments of the present invention, the sputtering gas is an inert gas, argon.

[0038] According to some embodiments of the present invention, the cavity is filled with an argon / oxygen mixture during the sputtering process.

[0039] According to some embodiments of the present invention, the temperature of the substrate during the sputtering process is 80-200°C.

[0040] Other features and advantages of the invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. Detailed Implementation

[0041] The following are specific embodiments of the present invention, and the technical solutions of the present invention will be further described in conjunction with the embodiments, but the present invention is not limited to these embodiments.

[0042] Unless otherwise specified, the reagents, methods and equipment used in this invention are all conventional reagents, methods and equipment in this technical field.

[0043] The raw materials used in the embodiments or comparative examples of this invention are as follows:

[0044] Indium oxide: Zhuzhou Keneng, purity 4N, specific surface area 12m² 2 / g-16m 2 / g;

[0045] Zinc oxide: Zhuzhou Keneng, purity 4N, specific surface area 12m² 2 / g-16m 2 / g;

[0046] Strontium oxide: Zhuzhou Keneng, purity 4N, specific surface area 10m² 2 / g-18m 2 / g;

[0047] Bismuth oxide: Zhuzhou Keneng, purity 4N, specific surface area 10m² 2 / g-18m 2 / g;

[0048] Vanadium oxide: Zhuzhou Keneng, purity 4N, specific surface area 10m² 2 / g-18m 2 / g.

[0049] Example 1

[0050] This embodiment provides a multi-component oxide-doped IZO target, comprising indium oxide, zinc oxide, strontium oxide, bismuth oxide, vanadium oxide, a dispersant, a binder, and a plasticizer. The dispersant is polyvinylpyrrolidone, the binder is polyacrylamide, and the plasticizer is polyvinyl alcohol. The mass of the dispersant is 1.5% of the total mass of the multi-component oxide powder, the mass of the binder is 0.9% of the total mass of the multi-component oxide powder, and the mass of the plasticizer is 2.0% of the total mass of the multi-component oxide powder. The contents of other components are shown in Table 1. The preparation method is as follows:

[0051] S1. Indium oxide, zinc oxide, strontium oxide, bismuth oxide, and vanadium oxide powders are sequentially added to a mixing tank, followed by the addition of polyvinylpyrrolidone (PVP) dispersant for premixing. The premixed slurry is then pumped into a ball mill jar. Grinding is performed in two stages: a pre-milling stage grinds 2.00mm zirconium beads at 600rpm for 8 hours, repeating 6 times; the pre-milling stage is followed immediately by a post-milling stage. The post-milling stage grinds 1.00mm zirconium beads at 650rpm for 10 hours, repeating 8 times. After ball milling, the specific surface area of ​​the multi-component oxide powder is 18m². 2 / g-25m2 / g, loose bulk density is 1.70g / cm³ 3 -1.85g / cm 3 Add binder and plasticizer and stir for 10 hours to obtain a mixed slurry.

[0052] S2. Spray Granulation: After mixing and grinding, the slurry is pumped to the top of a cyclone drying tower. The top of the cyclone drying tower has a centrifugal atomizer; a hot air stream flows through one end, and the slurry introduced at the other end encounters the hot air stream, granulating into powder particles under centrifugal force. The IZO-doped powder obtained by spray drying has a total impurity content ≤200ppm, a specific surface area between 8m² / g and 20m² / g, and a loose packing density between 0.91g / cm³ and 1.55g / cm³.

[0053] S3. Pressing and molding: The mixed doped IZO powder is pressed using wet cold isostatic pressing with a molding pressure of 160MPa to form a target blank. The height of the target blank after molding is 300mm.

[0054] S4. The target blank is subjected to high-temperature sintering under normal pressure at a sintering temperature of 1510℃ and a heating rate of 3.5℃ / min to complete the sintering of the doped IZO target.

[0055] Examples 2-8

[0056] Examples 2-8 provide a series of multi-component oxide-doped IZO targets, the amounts of which are shown in Table 1, and their preparation methods are the same as those in Example 1.

[0057] Table 1

[0058] Indium oxide Zinc oxide Strontium oxide Bismuth oxide Vanadium oxide Example 1 85.0％ 13.9％ 0.5％ 0.2％ 0.4％ Example 2 85.0％ 13.7％ 0.5％ 0.2％ 0.6％ Example 3 85.0％ 13.2％ 1.0％ 0.2％ 0.6％ Example 4 85.0％ 12.4％ 1.8％ 0.2％ 0.6％ Example 5 85.0％ 12.2％ 1.8％ 0.4％ 0.6％ Example 6 85.0％ 12.0％ 1.8％ 0.6％ 0.6％ Example 7 85.0％ 11.8％ 1.8％ 0.6％ 0.8％ Example 8 85.0％ 11.4％ 1.8％ 0.6％ 1.2％

[0059] Example 9

[0060] This example provides a multi-element oxide-doped IZO target material with the same composition as in Example 8. The difference lies in the preparation method, which uses ultrasonic sintering technology instead of the traditional high-temperature sintering method. The ultrasonic frequency is set to 3MHz, the heating rate is 15℃ / min, and the maximum sintering temperature is 1200℃.

[0061] Example 10

[0062] The difference between Example 10 and Example 9 is that the ultrasonic sintering method is set to a frequency of 10MHz, a heating rate of 20℃ / min, and a maximum sintering temperature of 1200℃.

[0063] Comparative Example 1

[0064] This example provides an IZO-doped target, which is prepared in the same way as in Example 1, except that the composition is 85.0% indium oxide, 14.5% zinc oxide, and 0.5% strontium oxide.

[0065] Comparative Example 2

[0066] This example provides an IZO doped target, which is prepared in the same way as in Example 1, except that the composition is 85.0% indium oxide, 14.3% zinc oxide, 0.5% strontium oxide, and 0.2% bismuth oxide.

[0067] Comparative Example 3

[0068] This example provides an IZO doped target, which is prepared in the same way as in Example 4, except that the composition is 85.0% indium oxide, 11.9% zinc oxide, 2.5% strontium oxide, 0.2% bismuth oxide, and 0.6% vanadium oxide.

[0069] Comparative Example 4

[0070] This example provides an IZO doped target, which is prepared in the same way as in Example 6, except that the composition is 85.0% indium oxide, 11.8% zinc oxide, 1.8% strontium oxide, 1.0% bismuth oxide, and 0.6% vanadium oxide.

[0071] Comparative Example 5

[0072] This example provides an IZO doped target, which is prepared in the same way as in Example 8, except that the composition is 85.0% indium oxide, 10.6% zinc oxide, 1.8% strontium oxide, 0.6% bismuth oxide, and 2.0% vanadium oxide.

[0073] Comparative Example 6

[0074] This example provides an IZO-doped target, which is prepared in the same way as in Example 8, except that the composition is 86.0% indium oxide and 14.0% zinc oxide.

[0075] Comparative Example 7

[0076] This example provides an IZO-doped target, which is prepared in the same way as in Example 8, except that the maximum high-temperature sintering temperature is 900°C and the composition is 86.0% indium oxide and 14.0% zinc oxide.

[0077] Comparative Example 8

[0078] This example provides an IZO-doped target, which is prepared in the same way as in Example 8, except that the composition is 85.0% indium oxide, 11.4% zinc oxide, and 3.6% praseodymium oxide.

[0079] Comparative Example 9

[0080] This example provides an IZO doped target, which is prepared in the same way as in Example 8, except that the composition is 85.0% indium oxide, 11.4% zinc oxide, 1.8% praseodymium oxide, 0.6% bismuth oxide, and 1.2% vanadium oxide.

[0081] Comparative Example 10

[0082] This example provides an IZO doped target, which is prepared in the same way as in Example 8, except that the composition is 85.0% indium oxide, 11.4% zinc oxide, 1.8% strontium oxide, 0.6% bismuth oxide, and 1.2% praseodymium oxide.

[0083] Comparative Example 11

[0084] This example provides a doped IZO target, which is prepared in the same way as in Example 8, except that the composition is 85.0% indium oxide, 11.4% zinc oxide, 1.8% strontium oxide, 0.6% zirconium oxide, and 1.2% vanadium oxide.

[0085] Comparative Example 12

[0086] This example provides a doped IZO target, which is prepared in the same way as in Example 8, except that the composition is 85.0% indium oxide, 11.4% zinc oxide, 1.8% strontium oxide, 0.6% titanium oxide, and 1.2% vanadium oxide.

[0087] Performance testing

[0088] 1. Processing and Binding: The target materials prepared in the above embodiments and comparative examples are processed according to the specified dimensions and then bound to the titanium tube. Ultrasonic testing is performed to detect no cracks or defects, followed by subsequent coating tests.

[0089] II. Coating Test

[0090] Using a clean glass substrate, TFT channel layer films were deposited using sputtering equipment with the targets prepared in the above embodiments and comparative examples. The deposition power was set to 80W, and inert argon gas was introduced as the sputtering gas. The deposition atmosphere in the chamber was a mixture of oxygen and argon. The film thickness was 400nm. The mobility and electrical stability of the sputtered film were measured using a Hall effect meter.

[0091] Detection methods

[0092] I. Target Density

[0093] The relative density of the doped IZO target prepared in this application was determined using the Archimedes displacement method.

[0094] II. Resistivity

[0095] The resistivity of the doped IZO target material prepared in this invention was measured using a four-probe resistivity meter.

[0096] III. Bending Strength

[0097] The flexural strength of the target material was tested using a universal testing machine.

[0098] IV. Target Material Grain Size

[0099] Metallographic analysis was used to analyze the size and distribution of micrograins in the target material.

[0100] The target materials prepared in each embodiment and comparative example, as well as the TFT channel layer thin film prepared by subsequent sputtering deposition, are shown in Table 2.

[0101] Table 2 Performance test results of each embodiment and comparative example

[0102]

[0103]

[0104] As shown in the table above, the multi-component oxide-doped IZO targets prepared in Examples 1-10 of this invention all have densities exceeding 99.0%, grain sizes less than 12 μm, resistivity less than 10 mΩ·cm, and flexural strength exceeding 130 MPa. In Examples 1-4, with increasing strontium oxide content, the NBIS test performance of the sputtered thin film continuously improves. When the strontium oxide content reaches 1.8%, the electrical properties of the thin film are significantly improved, with a voltage drift of only 0.02 V under NBIS. In Examples 4-6, with increasing bismuth oxide content, the density of the target material also continuously increases, indicating that bismuth oxide, as a sintering aid, effectively promotes the sintering and densification of the target material. Compared with Examples 1, 6-8, and Comparative Example 2, the addition of vanadium oxide demonstrates better solidification within the target material, promoting the transformation of the target phase into a single phase.

[0105] Comparative Example 1, with only 0.5% strontium oxide added and no bismuth oxide or vanadium oxide added, showed low target performance. Comparative Example 2, with 0.5% strontium oxide and 0.2% bismuth oxide added, showed little improvement in target performance due to the relatively small amount of oxides. In Comparative Example 3, with the strontium oxide content increased to 2.5%, the film mobility decreased significantly, and the resistivity also increased. This indicates that excessive addition of strontium oxide, as an oxygen vacancy inhibitor, impairs film mobility and increases target resistivity, resulting in a decline in the performance of both the prepared target and the film. In Comparative Example 4, with 1.0% bismuth oxide added, the target density remained unchanged compared to Example 8. However, metallographic analysis revealed a secondary phase microstructure. Excessive bismuth oxide addition had no effect on improving target density and instead damaged the target's crystal structure, causing lattice distortion and a secondary phase, leading to a decrease in the compositional uniformity of the film after sputtering. In Comparative Example 5, with vanadium oxide added at 2.0%, the NBIS test threshold voltage of the film showed a significant negative drift. Excessive vanadium oxide addition led to an increase in carrier concentration after sputtering, reducing the film's electrical stability. Comparative Example 6, fabricated with an IZO target, showed that the electrical performance of the film deteriorated after sputtering with the undoped IZO target, making it unsuitable for TFT channel layer materials. In Comparative Example 7, due to an excessively low sintering temperature, the IZO target was not fully sintered, resulting in a density too low to be detected. In Comparative Example 8, replacing the three doped oxide powders with praseodymium oxide significantly reduced the film's mobility, and the NBIS test showed a negative voltage drift. The target resistivity was also high, indicating that the doping effect of praseodymium oxide was inferior to that of co-doping with the three oxides. In Comparative Example 9, replacing the strontium oxide powder with praseodymium oxide resulted in a target density of only 98.2%, a lower film mobility compared to Example 8, and deteriorated electrical performance. In Comparative Example 10, replacing vanadium oxide powder with praseodymium oxide at a doping concentration of 1.2% resulted in a significant decrease in film mobility and a higher target resistivity. The carrier concentration effect of praseodymium oxide doping was not as pronounced as that of vanadium oxide. In Comparative Examples 11-12, bismuth oxide powder was replaced with zirconium oxide and titanium oxide powder, respectively. The target density was less than 99.0% in both cases, and secondary phases appeared. Similarly, as sintering aids, the doping effects of zirconium oxide and titanium oxide were limited.

[0106] The present invention has been described in detail above with reference to the embodiments of the present invention. However, the present invention is not limited to the above embodiments. Within the scope of knowledge possessed by those skilled in the art, various changes can be made without departing from the spirit of the present invention.

Claims

1. A multi-component oxide-doped indium zinc oxide target, characterized in that, It consists of the following components by mass percentage: The content of indium oxide is 80.0%~88.6%; the content of zinc oxide is 10.9%~15.8%; the content of strontium oxide is 0.2%~1.8%; the content of bismuth oxide is 0.2%~0.6%; and the content of vanadium oxide is 0.4%~1.2%, with the sum of all components being 100%. The microstructure of the multi-component oxide-doped indium zinc oxide target material is a single phase.

2. The multi-component oxide-doped indium zinc oxide target according to claim 1, characterized in that, The specific surface areas of the strontium oxide, bismuth oxide, and vanadium oxide are independently selected from 10 m². 2 / g~18m 2 / g.

3. The multi-component oxide-doped indium zinc oxide target according to claim 1 or 2, characterized in that, The D50 particle size of the strontium oxide is ≤3μm.

4. The multi-component oxide-doped indium zinc oxide target according to claim 1 or 2, characterized in that, The bismuth oxide has a D50 particle size ≤ 3 μm.

5. The multi-component oxide-doped indium zinc oxide target according to claim 1 or 2, characterized in that, The vanadium oxide has a D50 particle size ≤ 3 μm.

6. The method for preparing a multi-component oxide-doped indium zinc oxide target according to any one of claims 1 to 5, characterized in that, Includes the following steps: S1. Indium oxide, zinc oxide, strontium oxide, bismuth oxide, vanadium oxide and dispersant are mixed and ball-milled, then binder and plasticizer are added and spray-granulated to obtain indium zinc oxide powder; S2. Press the indium zinc oxide powder into shape; S3. The doped indium zinc oxide target obtained by pressing and molding is sintered to obtain the final product.

7. The method for preparing a multi-component oxide-doped indium zinc oxide target according to claim 6, characterized in that, The molding pressure for compression molding is 120~350MPa.

8. The method for preparing a multi-component oxide-doped indium zinc oxide target according to claim 6, characterized in that, The sintering includes ultrasonic sintering.

9. The method for preparing a multi-component oxide-doped indium zinc oxide target according to claim 8, characterized in that, The ultrasonic frequency of the ultrasonic sintering is 1~25 MHz; the sintering temperature is 1000~1200℃.

10. The method for preparing a multi-component oxide-doped indium zinc oxide target according to claim 6, characterized in that, The adhesive includes at least one of PVA, polyacryl alcohol, polyvinyl chloride, and hydroxypropyl methylcellulose.

11. The method for preparing a multi-component oxide-doped indium zinc oxide target according to claim 8, characterized in that, The heating rate of the ultrasonic sintering is 10℃~20℃ / min.

12. The application of the multi-component oxide doped indium zinc oxide target according to any one of claims 1 to 5 in TFT devices in the display field.

13. A transparent conductive oxide thin film, characterized in that, This includes the preparation of the target material using the multi-component oxide doped indium zinc oxide as described in any one of claims 1 to 5.

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