Display device and method of forming the same
By introducing a thermal insulation structure and a wavelength conversion layer into the Micro LED display device, the problem that the heat of the light emitting unit affects the life of the wavelength conversion element is solved, and the effect of improving the luminous efficiency and extending the life is achieved.
Patent Information
- Application Number
- CN202411529708.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-30
- Publication Date
- 2025-03-21
- Estimated Expiration
- 2044-10-30
AI Technical Summary
The heat generated by the light emitting unit in the Micro LED display device during operation affects the life of the wavelength conversion element, resulting in a reduced luminous efficiency and a shortened life.
A display device is designed, including a substrate, a planarization layer, a thermal insulation structure and a wavelength conversion layer. The heat-insulating structure reduces heat transfer through the overhead unit, and the wavelength conversion unit in the wavelength conversion layer is formed on the overhead layer for converting the light of the light emitting unit.
By reducing the influence of heat on the wavelength conversion element, the life of the wavelength conversion element is extended and the luminous efficiency and life of the display device are improved.
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Figure CN119050126B_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of display technology, and in particular to a display device and a method for forming the same. Background Art
[0002] Micro Light Emitting Diode (Micro LED) is a new display technology. It consists of micron-sized light-emitting units, which can achieve high brightness, high contrast and fast response display effects. It is widely used in display devices such as head-mounted display (HMD), head up display (HUD), and micro-projection.
[0003] In Micro LED display devices, wavelength conversion elements are usually used to convert the wavelength of the excitation light emitted by the Micro LED elements to obtain stimulated light of different wavelengths, thereby realizing color display of the Micro LED display device. However, the light-emitting unit in the Micro LED display device will generate a lot of heat during the light-emitting process. The accumulation of this heat will cause the wavelength conversion element arranged above the light-emitting unit to age and fail, thereby affecting the normal use of the Micro LED display device, resulting in the inability to further improve the light-emitting efficiency and life of the Micro LED display device. Summary of the invention
[0004] In order to solve the problem that the heat generated by the light-emitting unit in the Micro LED display device during operation affects the life of the wavelength conversion element, resulting in reduced luminous efficiency and shortened life of the Micro LED display device, the present application proposes a display device and a method for forming the same.
[0005] In a first aspect, an embodiment of the present application discloses a display device, comprising:
[0006] A substrate having a preset number of light-emitting units arranged at intervals formed therein;
[0007] A planarization layer is formed on the substrate, the planarization layer fills the spaces between the light-emitting units and allows the light emitted by the light-emitting units to pass through;
[0008] The heat insulation structure includes at least one overhead unit, and the overhead unit includes a support leg and an overhead layer; the support leg is formed on the flattening layer, and the overhead layer is suspended on the support leg;
[0009] The wavelength conversion layer includes a preset number of wavelength conversion units arranged at intervals. The wavelength conversion units are formed on the overhead layer and are used to convert the light emitted by the corresponding light-emitting units into light of a preset color.
[0010] In some optional embodiments, the number of overhead units is equal to the number of light-emitting units and corresponds one to one.
[0011] In some optional embodiments, each overhead unit includes at least two legs.
[0012] In some optional embodiments, the material of the overhead layer is a heat-insulating material.
[0013] In some optional embodiments, the thermal insulation structure further includes a heat-conducting layer, which is formed between adjacent overhead units and seals the gaps between the legs in the overhead units to form a heat-insulating cavity inside the overhead units.
[0014] In some optional embodiments, the thickness of the heat-conducting layer is less than or equal to the height of the overhead unit;
[0015] The material of the heat conducting layer is metal.
[0016] In some optional embodiments, the wavelength conversion layer further includes a first light reflecting structure;
[0017] The first light-reflecting structure comprises a first reflective layer and a first grid network, wherein the first reflective layer is formed on the first grid network;
[0018] The first reflective layer at least partially contacts the heat conductive layer.
[0019] In some optional embodiments, the preset number of wavelength conversion units includes at least a first wavelength conversion unit and a second wavelength conversion unit;
[0020] The first wavelength conversion unit is used to convert the light emitted by its corresponding light emitting unit into light of a first color;
[0021] The second wavelength conversion unit is used to convert the light emitted by its corresponding light emitting unit into light of a second color.
[0022] In some optional embodiments, a second light reflecting structure is further formed in the substrate, and the second light reflecting structure is formed between adjacent light emitting units;
[0023] The second light reflecting structure includes a second reflective layer and a second grid network, and the second reflective layer is formed on the second grid network.
[0024] In a second aspect, an embodiment of the present application discloses a method for forming a display device, the method comprising:
[0025] A substrate is provided; a preset number of light-emitting units arranged at intervals are formed in the substrate;
[0026] A planarization layer is formed on the substrate; the planarization layer fills the spaces between the light-emitting units and allows the light emitted by the light-emitting units to pass through;
[0027] A heat insulation structure is formed on the planarization layer; the heat insulation structure includes at least one overhead unit, and the overhead unit includes a support leg and an overhead layer; the support leg is formed on the planarization layer, and the overhead layer is suspended on the support leg;
[0028] A wavelength conversion layer is formed on the heat insulation structure; the wavelength conversion layer includes a preset number of wavelength conversion units arranged at intervals, the wavelength conversion units are formed on the overhead layer, and are used to convert the light emitted by the light-emitting unit into light of a preset color.
[0029] In some optional embodiments, forming a planarization layer on a substrate includes:
[0030] A heat insulating material is filled in the spaces between the light emitting units, resulting in a planarization layer formed on the substrate.
[0031] In some optional embodiments, forming a heat insulation structure on the planarization layer includes:
[0032] forming a sacrificial layer on the planarization layer;
[0033] Forming a preset number of holes on the sacrificial layer; the holes penetrate the sacrificial layer to expose the surface of the planarization layer;
[0034] forming a foot in the hole and a standoff layer on the sacrificial layer;
[0035] The sacrificial layer is removed, and the overhead layer is suspended on the support legs to obtain a heat insulation structure including at least one overhead unit.
[0036] In some optional embodiments, the sacrificial layer is removed, and the overhead layer is suspended on the support legs to obtain a heat insulation structure including at least one overhead unit, including:
[0037] The sacrificial layer is removed, so that the overhead layer is suspended on the support legs to obtain at least one overhead unit;
[0038] A heat-conducting layer is formed between adjacent overhead units to seal the gaps between the legs in the overhead units, so that a heat-insulating cavity is formed inside the overhead units to obtain a heat-insulating structure.
[0039] In some optional embodiments, the material of the sacrificial layer is silicon oxide, and the method of removing the sacrificial layer is wet etching.
[0040] In some optional embodiments, forming a wavelength conversion layer on the heat insulation structure includes:
[0041] forming a first light reflecting structure on the heat conductive layer;
[0042] A wavelength conversion unit is formed on the overhead layer and between the first light reflecting structures to obtain a wavelength conversion layer.
[0043] In some optional embodiments, a wavelength conversion unit is formed on the overhead layer and between the first light reflecting structures to obtain a wavelength conversion layer, including:
[0044] A color conversion material filling the spaces between the first light-reflecting structures is formed on the overhead layer as a wavelength conversion unit to obtain a wavelength conversion layer.
[0045] The technical solution provided by this application has the following technical effects:
[0046] The display device and its forming method described in the present application include a substrate, a planarization layer, a heat-insulating structure and a wavelength conversion layer, wherein a preset number of light-emitting units arranged at intervals are formed in the substrate, the planarization layer is formed on the substrate, the planarization layer fills the intervals between the light-emitting units and allows the light emitted by the light-emitting units to pass through, the heat-insulating structure includes at least one overhead unit, the overhead unit includes a support and an overhead layer, the support is formed on the planarization layer, the overhead layer is suspended on the support, and the wavelength conversion layer includes a preset number of wavelength conversion units arranged at intervals, the wavelength conversion unit is formed on the overhead layer, and is used to convert the light emitted by the corresponding light-emitting unit into light of a preset color. Since the heat-insulating structure includes the overhead unit, and the wavelength conversion unit is formed on the overhead unit, the heat generated by the light-emitting unit can be reduced from being transferred to the wavelength conversion unit, thereby slowing down the aging of the wavelength conversion unit, extending the life of the wavelength conversion unit, and thus improving the luminous efficiency and life of the display device. BRIEF DESCRIPTION OF THE DRAWINGS
[0047] In order to more clearly illustrate the technical solutions and advantages in the embodiments of the present application or the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0048] Figure 1 is a schematic structural diagram of a display device provided in an embodiment of the present application;
[0049] Figure 2 A schematic flow chart of a method for forming a display device provided in an embodiment of the present application;
[0050] Figure 3 A schematic diagram of a structure for completing the preparation of a light-emitting unit provided in an embodiment of the present application;
[0051] Figure 4 A schematic diagram of a structure for completing the preparation of a second reflective structure provided in an embodiment of the present application;
[0052] Figure 5 A schematic diagram of a structure for completing the preparation of a planarization layer provided in an embodiment of the present application;
[0053] Figure 6 A schematic diagram of a structure for completing the preparation of a sacrificial layer provided in an embodiment of the present application;
[0054] Figure 7a A schematic diagram of a top view structure of a hole etching process provided in an embodiment of the present application;
[0055] Figure 7b A schematic diagram of a cross-sectional structure along line AA of a structure in which hole etching is completed provided in an embodiment of the present application;
[0056] Figure 7c A schematic diagram of a cross-sectional structure along line BB of a structure in which hole etching is completed provided in an embodiment of the present application;
[0057] Figure 8a A schematic diagram of a top view structure of a completed overhead unit provided in an embodiment of the present application;
[0058] Figure 8b A schematic diagram of a cross-sectional structure along line AA of a structure prepared by an overhead unit provided in an embodiment of the present application;
[0059] Figure 8c A schematic diagram of a cross-sectional structure along line BB of a structure prepared by an overhead unit provided in an embodiment of the present application;
[0060] Figure 9a A schematic diagram of a top view structure after removing a sacrificial layer provided in an embodiment of the present application;
[0061] Figure 9b A schematic diagram of a cross-sectional structure along line AA of a structure after removing a sacrificial layer provided in an embodiment of the present application;
[0062] Fig.9c A schematic diagram of a cross-sectional structure along line BB of a structure after removing a sacrificial layer provided in an embodiment of the present application;
[0063] Fig.10a A schematic diagram of a top view structure of a completed heat-conducting layer provided in an embodiment of the present application;
[0064] Fig.10b A schematic diagram of the cross-sectional structure of a structure prepared by a heat-conducting layer provided in an embodiment of the present application along line AA;
[0065] Fig.10c A schematic diagram of the cross-sectional structure of a structure prepared by a heat-conducting layer provided in an embodiment of the present application along line BB;
[0066] Fig.11 A structural schematic diagram of completing the preparation of a first reflective structure provided in an embodiment of the present application.
[0067] The following is a supplementary description of the attached drawings:
[0068] 10-substrate; 110-light-emitting unit; 111-first semiconductor layer; 112-second semiconductor layer; 113-quantum hydrazine light-emitting layer; 114-electrode layer; 120-second reflective structure; 121-second reflective layer; 122-second grid network; 130-driving panel; 131-electrode contact; 140-bonding layer; 150-ohmic contact layer; 160-passivation layer; 20-planarization layer; 30-thermal insulation structure; 310-overhead unit; 311-support foot; 312-overhead layer; 320-thermal conductive layer; 40-wavelength conversion layer; 410-wavelength conversion unit; 420-first reflective structure; 421-first reflective layer; 422-first grid network; 50-sacrificial layer; 510-hole. DETAILED DESCRIPTION
[0069] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.
[0070] It should be noted that the "one embodiment" or "embodiment" referred to in the specification of the embodiment of the present application refers to a specific feature, structure or characteristic that can be included in at least one implementation of the present application. It should be understood that in the specification and claims of the embodiment of the present application and the above-mentioned drawings, the orientation or position relationship indicated by the terms "upper", "lower", "top", "bottom", etc. is based on the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. The terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as "first" and "second" can explicitly or implicitly include one or more of the features. Moreover, the terms "first", "second", etc. are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described here can be implemented in an order other than those illustrated or described here. In addition, in the description of the present embodiment, unless otherwise specified, "plurality" means two or more. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system or product including a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.
[0071] In order to make the purpose, technical solution and advantages disclosed in the embodiments of the present application more clearly understood, the embodiments of the present application are further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the embodiments of the present application and are not used to limit the embodiments of the present application.
[0072] See also Figure 1 , Figure 1 Schematic diagram of a display device provided in an embodiment of the present application. Figure 1 As shown, the display device includes a substrate 10 , a planarization layer 20 , a heat insulation structure 30 and a wavelength conversion layer 40 .
[0073] In the embodiment of the present application, the substrate 10 may include a driving panel 130 and a light emitting unit 110 formed on the driving panel 130. The driving panel 130 may include a complementary metal oxide semiconductor (CMOS) array substrate 10, or a thin film transistor (TFT), a high electron mobility transistor (HEMT), etc. The driving panel 130 may be obtained by processing the substrate into an integrated circuit. Optionally, the substrate in the substrate 10 includes but is not limited to silicon, silicon carbide, gallium nitride, germanium, gallium arsenide, cobalt phosphide, glass, ruby, sapphire, etc.
[0074] The driving panel 130 is used to provide an electrical signal to the light-emitting unit 110, so that the light-emitting unit 110 emits light. Specifically, a preset number of electrode contacts 131 are formed on the driving panel 130, and an electrode layer 114 is formed in the light-emitting unit 110. The electrode layer 114 in each light-emitting unit 110 is connected to a corresponding electrode contact 131. Optionally, the electrode contacts 131 in the driving panel 130 can be a common cathode or a common anode, so that the light-emitting unit 110 in the display device can be controlled. The driving panel 130 drives the light-emitting unit 110 to emit light by providing an electrical signal to the light-emitting unit 110.
[0075] In the embodiment of the present application, a preset number of light-emitting units 110 arranged at intervals are formed in the substrate 10, and the number of the light-emitting units 110 can be set according to actual needs. The plurality of light-emitting units 110 are arranged at intervals on a side surface of the driving panel 130. The plurality of light-emitting units 110 can be arranged in an array on a side surface of the driving panel 130. The light-emitting unit 110 can emit light after receiving an electrical signal provided by the driving panel 130.
[0076] like Figure 1As shown, the light-emitting unit 110 may include a first semiconductor layer 111, a second semiconductor layer 112 and an electrode layer 114. A quantum hydrazine light-emitting layer 113 is formed between the first semiconductor layer 111 and the second semiconductor layer 112. Optionally, the first semiconductor layer 111 is a semiconductor of a first doping type, and the second semiconductor layer 112 is a semiconductor of a second doping type. The first doping type is opposite to the second doping type, for example, the first doping type is P-type doping, and the second doping type is N-type doping. The electrode layer 114 is at least partially formed on the second semiconductor layer 112, and at least partially contacts the electrode contact 131 in the driving panel 130. Optionally, the material of the electrode layer 114 is generally selected from a transparent conductive material, such as indium tin oxide, so that the light emitted by the light-emitting unit 110 can pass through the electrode layer 114.
[0077] In some embodiments, a bonding layer 140 and an ohmic contact layer 150 are further formed between the driving panel 130 and the light emitting unit 110. Figure 1 As shown, the bonding layer 140 is formed on the driving panel 130 and is formed below the light emitting unit 110. Optionally, the bonding layer 140 is made of at least one of metals such as gold, silver, copper, aluminum, tin, titanium, and tungsten. The ohmic contact layer 150 is formed on the bonding layer 140, and the first semiconductor layer 111 in the light emitting unit 110 is formed on the ohmic contact layer 150. The material of the ohmic contact layer 150 may be a transparent conductive material, such as indium tin oxide.
[0078] In some embodiments, the light emitting unit 110 further includes a passivation layer 160, which is formed on the side of the stacked structure of the first semiconductor layer 111 and the second semiconductor layer 112 to protect the light emitting structure of the light emitting unit 110. Optionally, the material of the passivation layer 160 may include an inorganic material or an organic material, such as any one or a combination of materials such as silicon dioxide, aluminum oxide, zirconium dioxide, silicon nitride, hafnium oxide, black photoresist, color photoresist, polyimide, etc.
[0079] In the embodiment of the present application, a second reflective structure 120 is also formed in the substrate 10. The second reflective structure 120 is formed between adjacent light-emitting units 110 to reflect the light emitted by the light-emitting units 110, thereby avoiding crosstalk of the light emitted by the light-emitting units 110. Optionally, the second reflective structure 120 includes a second reflective layer 121 and a second grid network 122, and the second reflective layer 121 is formed on the second grid network 122. The material of the second reflective layer 121 can be a metal material with a high reflective effect, such as silver, aluminum, etc. The second grid network 122 can be a light-absorbing material such as black photoresist and color photoresist. By arranging the second reflective structure 120 between adjacent light-emitting units 110, optical isolation between the light-emitting units 110 can be achieved, and at the same time, a certain heat conduction effect can be achieved. In some embodiments, the second reflective layer 121 may not be formed on the second grid network 122.
[0080] In the present application embodiment, Figure 1 As shown, a planarization layer 20 is formed on the substrate 10 to provide a planarized surface. Figure 1 As shown, the planarization layer 20 covers the second light emitting structure and fills the gap between the second light emitting structure and the light emitting unit 110. The planarization layer 20 allows the light emitted by the light emitting unit 110 to pass through. Optionally, the planarization layer 20 can be formed of a heat-insulating material with a low thermal conductivity, such as methyl methacrylate, polymethyl methacrylate, epoxy resin, styrene, polyurethane, etc. Generally speaking, in order to achieve a better reflective effect, the height of the second reflective structure 120 is slightly higher than the height of the light emitting unit 110. The planarization layer 20 can be flush with the upper surface of the second reflective structure 120, or it can be slightly higher than the surface of the second reflective structure 120, that is, the planarization layer 20 covers the upper surface of the second reflective structure 120. The use of heat-insulating material to fill the gap between the light emitting units 110 can prevent the heat generated by the light emitting unit 110 during operation from being dissipated outward in large quantities, thereby preventing the aging of the wavelength conversion unit 410 formed above the planarization layer 20, and improving the life of the display device and the display reliability.
[0081] In the embodiment of the present application, the heat insulation structure 30 is formed on the planarization layer 20. Figure 1 As shown, the heat insulation structure 30 includes at least one overhead unit 310. For any overhead unit 310, the overhead unit 310 includes a support 311 and an overhead layer 312. The support 311 is formed on the planarization layer 20, and the overhead layer 312 is suspended on the support 311. In other words, a cavity is formed in the overhead unit 310, and the structure above it can be suspended. Since the thermal conductivity of air is one order of magnitude lower than that of the resin material of the planarization layer 20, lower heat conduction can be achieved, thereby preventing the heat generated by the light-emitting unit 110 during operation from being transferred to the wavelength conversion unit above.
[0082] Optionally, the number of overhead units 310 is equal to the number of light-emitting units 110, and they correspond one to one. That is, an overhead unit 310 is arranged above each light-emitting unit 110. Each overhead unit 310 includes at least two legs 311, such as four legs 311. The legs 311 are arranged around the light-emitting unit 110 corresponding thereto. The overhead unit 310 can be formed of a heat-insulating material with a low thermal conductivity, such as methyl methacrylate, polymethyl methacrylate, epoxy resin, styrene, polyurethane, etc., so as to further reduce the heat that can be transferred to the top of the overhead unit 310.
[0083] In some embodiments, the number of overhead units 310 may also be less than the number of light-emitting units 110 , that is, two or more light-emitting units 110 are formed under the cavity of one overhead unit 310 .
[0084] In the embodiment of the present application, in order to ensure the reliability of the operation of the light-emitting unit 110, it is necessary to block the side of the overhead unit 310 to prevent moisture outside the display device from entering the cavity of the overhead unit 310 and interfering with the normal operation of the light-emitting unit 110. Optionally, when blocking the side of the overhead unit 310, a heat-conducting material may be used to block the side, so that the heat in the cavity of the overhead unit 310 can be discharged to the outside through the side.
[0085] Specifically, if Figure 1 As shown, the heat insulation structure 30 also includes a heat-conducting layer 320, which is formed between adjacent overhead units 310, and the heat-conducting layer 320 seals the gap between the legs 311 in the overhead unit 310, so that a heat-insulating cavity is formed inside the overhead unit 310. Optionally, the thickness of the heat-conducting layer 320 is less than or equal to the height of the overhead unit 310, and greater than or equal to the height of the legs 311, so as to ensure that the heat-conducting layer 320 can achieve the blocking of the side of the overhead unit 310, and also prevent the heat-conducting layer 320 from transferring the heat in the overhead unit 310 upward. Optionally, the material of the heat-conducting layer 320 is metal, such as gold, silver, copper, aluminum, etc. Metal solid materials can achieve physical blocking around the overhead unit 310, and the metal thermal conductivity is much higher than that of air, resulting in good peripheral heat conduction, so that the heat in the overhead unit 310 can be dissipated outward.
[0086] In the embodiment of the present application, the wavelength conversion layer 40 is formed on the heat insulation layer. Figure 1As shown, the wavelength conversion layer 40 includes a preset number of wavelength conversion units 410 arranged at intervals, and the wavelength conversion units 410 are formed on the overhead layer 312, and are used to convert the light emitted by the light-emitting unit 110 into light of a preset color. The wavelength conversion units 410 can be a color conversion material layer arranged at intervals, and optionally, the color conversion material can be a photoluminescent color conversion material, such as quantum dots, phosphors, etc. Optionally, the number of wavelength conversion units 410 can be equal to the number of light-emitting units 110, or can be unequal, and can be selected according to display needs.
[0087] As an optional implementation, the number of wavelength conversion units 410 is equal to the number of light-emitting units 110, and they correspond one to one, and each wavelength conversion unit 410 is used to convert the light emitted by its corresponding light-emitting unit 110 into light of a preset color. In other words, a wavelength conversion unit 410 is correspondingly arranged above each light-emitting unit 110.
[0088] In the embodiment of the present application, a preset number of wavelength conversion units 410 can convert the light emitted by the light emitting unit 110 into light of the same color, or can convert the light emitted by the light emitting unit 110 into light of different colors, and the specific selection can be made according to display needs.
[0089] As an example, a preset number of wavelength conversion units 410 may be made of the same color conversion material, so that the light of the first color emitted by the preset number of light-emitting units 110 is converted into the same second color light by the same color conversion material and then emitted. For example, the first color light may be blue light, and the second color light may be red light or green light. Alternatively, the first color light may be ultraviolet light, and the second color light may be one of optical colors such as red light, green light or blue light. In this way, the display device can perform monochrome display.
[0090] In the embodiment of the present application, the preset number of wavelength conversion units 410 may be made of two or more color conversion materials, so that the light emitted by the light emitting unit 110 can be converted into two or more colors.
[0091] As an optional embodiment, the light-emitting unit 110 emits light of a first color, and the preset number of wavelength conversion units 410 may include a first wavelength conversion unit 410 and a second wavelength conversion unit 410. The first wavelength conversion unit 410 is used to convert the light emitted by its corresponding light-emitting unit 110 into light of a second color. The second wavelength conversion unit 410 is used to convert the light emitted by its corresponding light-emitting unit 110 into light of a third color. At the same time, the wavelength conversion layer 40 also includes a light-transmitting unit, and the light of the first color emitted by the light-emitting unit 110 can pass through the light-transmitting unit. For example, the light of the first color is blue light, the light of the second color is red light, and the light of the third color is green light. By designing the arrangement of the first light-emitting unit, the second light-emitting unit and the light-transmitting unit in the wavelength conversion layer 40, the display device can perform full-color display.
[0092] As another optional implementation, the preset number of wavelength conversion units 410 includes a first wavelength conversion unit 410, a second wavelength conversion unit 410, and a third wavelength conversion unit 410. The light emitted by the light-emitting unit 110 may be visible light, such as blue light, and the light emitted by the light-emitting unit 110 may also be invisible light, such as ultraviolet light. The first wavelength conversion unit 410 is used to convert the light emitted by its corresponding light-emitting unit 110 into light of a first color. The second wavelength conversion unit 410 is used to convert the light emitted by its corresponding light-emitting unit 110 into light of a second color. The third wavelength conversion unit 410 is used to convert the light emitted by its corresponding light-emitting unit 110 into light of a third color. In some embodiments, the first wavelength conversion unit 410, the second wavelength conversion unit 410, and the third wavelength conversion unit 410 are arranged in a preset arrangement.
[0093] As another example, three adjacent wavelength conversion units 410 are respectively made of three different color conversion materials, so that the first color light emitted by the three adjacent light-emitting units 110 is converted into the second color light, the third color light and the fourth color light by the three different color conversion materials. For example, the first color light and the second color light can both be blue light, the third color light can be red light, and the fourth color light can be green light. Alternatively, the first color light can be ultraviolet light, the second color light can be red light, the third color light can be green light, and the fourth color light can be blue light. In this way, the display device can achieve full-color display.
[0094] In the embodiment of the present application, the wavelength conversion layer 40 further includes a first light reflecting structure 420, which is formed between adjacent wavelength conversion units 410 and is used to reflect the light converted by different wavelength conversion units 410, thereby avoiding crosstalk between the light emitted by the wavelength conversion units 410. Optionally, the first light reflecting structure 420 can be formed on the heat conducting layer 320. On the one hand, since the height of the heat conducting layer 320 is relatively low, the height of the first light reflecting structure 420 can be relatively extended, thereby improving the light reflection effect and further improving the display effect; on the other hand, the heat conducting layer 320 can also be isolated from the wavelength conversion unit 410, thereby avoiding heat transfer to the wavelength conversion unit 410.
[0095] In the embodiment of the present application, the first reflective structure 420 includes a first reflective layer 421 and a first grid network 422, and the first reflective layer 421 is formed on the first grid network 422. The material of the first reflective layer 421 can be a metal material with a high reflective effect, such as silver, aluminum, etc. The first grid network 422 can be a light-absorbing material such as black photoresist, color photoresist, etc. By arranging the first reflective structure 420 between adjacent wavelength conversion units 410, optical isolation between the wavelength conversion units 410 can be achieved, and at the same time, a certain heat insulation effect can be achieved. In some embodiments, the first reflective layer 421 may not be formed on the first grid network 422.
[0096] The display device described in the present application includes a substrate 10, a planarization layer 20, a heat insulation structure 30 and a wavelength conversion layer 40. A preset number of light-emitting units 110 arranged at intervals are formed in the substrate 10. The planarization layer 20 is formed on the substrate 10. The planarization layer 20 fills the intervals between the light-emitting units 110 and allows the light emitted by the light-emitting units 110 to pass through. The heat insulation structure 30 includes at least one overhead unit 310. The overhead unit 310 includes a support 311 and an overhead layer 312. The support 311 is formed on the planarization layer 20. The overhead layer 312 is suspended on the support 311. The wavelength conversion layer 40 includes a preset number of wavelength conversion units 410 arranged at intervals. The wavelength conversion unit 410 is formed on the overhead layer 312 and is used to convert the light emitted by its corresponding light-emitting unit 110 into light of a preset color. Since the thermal insulation structure 30 includes the overhead unit 310 and the wavelength conversion unit 410 is formed on the overhead unit 310, the heat generated by the light-emitting unit 110 can be reduced from being transferred to the wavelength conversion unit 410, thereby slowing down the aging of the wavelength conversion unit 410, extending the life of the wavelength conversion unit 410, and further improving the luminous efficiency and life of the display device.
[0097] The present application also provides a method for forming a display device. Figure 2 A schematic diagram of a method for forming a display device provided in an embodiment of the present application is shown in FIG. Figure 2As shown, the method includes:
[0098] S01: providing a substrate 10; a preset number of light-emitting units 110 arranged at intervals are formed in the substrate 10.
[0099] In the embodiment of the present application, the substrate 10 includes a driving panel 130, a light-emitting unit 110 formed on the driving panel 130, and a second reflective structure 120. The substrate 10 can be prepared by a semiconductor processing process. As an example, when preparing the substrate 10, the driving panel 130 can be obtained first, and then the light-emitting unit 110 can be prepared on the driving panel 130. Figure 3 A structural diagram of a light emitting unit 110 prepared in an embodiment of the present application is shown in FIG. Figure 3 As shown, the light emitting units 110 are formed on the driving panel 130 at intervals, and the electrode layer 114 in the light emitting unit 110 is partially in contact with the electrode contact 131 in the driving panel 130. After the light emitting unit 110 is prepared, a second reflective structure 120 can be formed between adjacent light emitting units 110. Figure 4 A schematic diagram of a structure for preparing a second reflective structure 120 is provided in an embodiment of the present application, such as Figure 4 As shown, the second light reflecting structures 120 are formed between adjacent light emitting units 110. Each second light reflecting structure 120 may include a second reflective layer 121 and a second grid network 122, wherein the second grid network 122 is coated on the second reflective layer 121.
[0100] S03 : forming a planarization layer 20 on the substrate 10 ; the planarization layer 20 fills the spaces between the light emitting units 110 and allows the light emitted by the light emitting units 110 to pass through.
[0101] In the embodiment of the present application, after the substrate 10 is obtained, a planarization layer 20 can be formed on the substrate 10. Specifically, a heat insulating material is filled in the gaps between the light emitting units 110 to obtain a heat insulating material filling layer, and the surface of the heat insulating material filling layer is planarized to obtain the planarization layer 20 formed on the substrate 10. Figure 5 A schematic diagram of a structure for preparing a planarization layer 20 provided in an embodiment of the present application is shown in FIG. Figure 5 As shown, the planarization layer 20 is formed on the substrate 10 and fills the space between the light emitting unit 110 and the second light reflecting structure 120. The planarization layer 20 can be formed of a heat insulating material.
[0102] S05: forming a heat insulating structure 30 on the planarization layer 20; the heat insulating structure 30 comprises at least one overhead unit 310, the overhead unit 310 comprises a support 311 and an overhead layer 312; the support 311 is formed on the planarization layer 20, and the overhead layer 312 is formed suspended on the support 311.
[0103] In the embodiment of the present application, after the preparation of the planarization layer 20 is completed, the thermal insulation structure 30 can be formed on the planarization layer 20. Specifically, forming the thermal insulation structure 30 on the planarization layer 20 may include: forming a sacrificial layer 50 on the planarization layer 20. Then, a preset number of holes 510 are formed on the sacrificial layer 50, wherein the holes 510 penetrate the sacrificial layer 50 to expose the surface of the planarization layer 20. Then, a support 311 is formed in the hole 510 and an overhead layer 312 is formed on the sacrificial layer 50. By removing the sacrificial layer 50, the overhead layer 312 is suspended on the support 311, and the thermal insulation structure 30 including at least one overhead unit 310 is obtained.
[0104] Figure 6 A schematic diagram of a structure for preparing a sacrificial layer 50 is provided in an embodiment of the present application, such as Figure 6 As shown, a sacrificial layer 50 is formed on the planarization layer 20, and the sacrificial layer 50 is used to form the overhead unit 310. Optionally, the material of the sacrificial layer 50 can be silicon oxide, polysilicon, photoresist, polyimide, etc. As an example, the sacrificial layer 50 is made of silicon oxide material, and a preset number of holes 510 can be formed on the sacrificial layer 50 by wet etching, such as etching a preset position on the sacrificial layer 50 with a hydrofluoric acid solution.
[0105] Figure 7a A schematic diagram of a top view of a structure in which a hole 510 is etched is provided in an embodiment of the present application. Figure 7b A schematic cross-sectional structure diagram of a structure where a hole 510 is etched along line AA provided in an embodiment of the present application, Figure 7c A schematic diagram of a cross-sectional structure along line BB of a structure in which a hole 510 is etched is provided in an embodiment of the present application, as shown in FIG. Figures 7a to 7c As shown, the holes 510 are opened in the sacrificial layer 50 and penetrate the sacrificial layer 50. The number and shape of the holes 510 can be selected as needed.
[0106] When forming the overhead unit 310 , the support leg 311 may be formed in the hole 510 first, and then the overhead layer 312 material may be formed on the entire surface of the sacrificial layer 50 . The overhead unit 310 may be obtained by etching the overhead layer 312 material. Figure 8a A schematic diagram of a top view of a structure of a completed overhead unit 310 provided in an embodiment of the present application is shown in FIG. Figure 8b A schematic cross-sectional structure diagram of a structure prepared by an overhead unit 310 along line AA provided in an embodiment of the present application, Figure 8c A schematic diagram of a cross-sectional structure of a structure prepared by an overhead unit 310 provided in an embodiment of the present application along line BB is shown as follows: Figures 8a to 8cAs shown, the support leg 311 prepared by the overhead unit 310 is formed in the hole 510, and one end is in contact with the planarization layer 20, and an overhead layer 312 is formed above the other end. The materials of the overhead layer 312 and the support leg 311 can be the same or different. Optionally, the material of the overhead layer 312 and / or the support leg 311 is a heat-insulating material.
[0107] After the formation of the overhead unit 310 is completed, the overhead layer 312 is suspended on the support leg 311 by removing the sacrificial layer 50, thereby obtaining at least one overhead unit 310. Optionally, the sacrificial layer 50 can be removed by selective etching, such as wet processing, to etch the sacrificial layer 50 below the overhead layer 312, so that the overhead layer 312 is suspended. As an example, the sacrificial layer is made of silicon oxide, and the sacrificial layer is removed by wet etching. Figure 9a This is a schematic diagram of a top view structure after removing the sacrificial layer 50 provided in an embodiment of the present application. Figure 9b A schematic diagram of a cross-sectional structure along line AA of a structure after removing the sacrificial layer 50 provided in an embodiment of the present application, Fig.9c A schematic diagram of a cross-sectional structure along line BB of a structure after removing the sacrificial layer 50 provided in an embodiment of the present application is shown in FIG. Figures 9a to 9c As shown, there is an air gap below the overhead unit 310. Since the thermal conductivity of air is one order of magnitude lower than that of the material of the overhead unit 310, lower heat conduction can be achieved.
[0108] After removing the sacrificial layer 50 , a heat-conducting layer 320 may be formed between adjacent overhead units 310 to seal the gaps between the legs 311 in the overhead units 310 , so that a heat-insulating cavity is formed inside the overhead units 310 , thereby obtaining a heat-insulating structure 30 . Fig.10a A schematic diagram of a top view of a heat conducting layer 320 prepared in an embodiment of the present application is shown. Fig.10b A schematic diagram of a cross-sectional structure of a structure prepared by a heat-conducting layer 320 provided in an embodiment of the present application along line AA, Fig.10c A schematic diagram of the cross-sectional structure of a structure prepared by a heat-conducting layer 320 provided in an embodiment of the present application along line BB is shown as follows: Figures 10a to 10c As shown, the overhead unit 310 is sealed by forming a heat-conducting layer 320 on the side of the overhead unit 310. Optionally, the heat-conducting layer 320 made of metal material can be formed by processes such as metal evaporation and stripping to achieve the sealing of the side of the overhead unit 310. The metal material achieves physical sealing around the overhead unit 310, and the thermal conductivity of the metal is much higher than that of air, which can produce a good peripheral heat conduction effect.
[0109] S07: forming a wavelength conversion layer 40 on the heat insulation structure 30; the wavelength conversion layer 40 includes a preset number of wavelength conversion units 410 arranged at intervals, and the wavelength conversion units 410 are formed on the overhead layer 312 for converting the light emitted by the light-emitting unit 110 into light of a preset color.
[0110] In the embodiment of the present application, after the preparation of the overhead structure is completed, the first light-reflecting structure 420 may be first formed on the heat-conducting layer 320 in the overhead structure, and then the wavelength conversion unit 410 may be formed. Specifically, the first light-reflecting structure 420 is formed on the heat-conducting layer 320, and then the wavelength conversion unit 410 is formed on the overhead layer 312 and between the light-reflecting structures to obtain the wavelength conversion layer 40. When forming the wavelength conversion layer 40, a color conversion material filling the interval between the first light-reflecting structures 420 may be formed on the overhead layer 312 as the wavelength conversion unit 410 to obtain the wavelength conversion layer 40.
[0111] Fig.11 A schematic diagram of a structure for completing the preparation of the first reflective structure 420 provided in an embodiment of the present application is shown in FIG. Fig.11 As shown, the first reflective structure 420 is formed on each heat-conducting layer 320. Each first reflective structure 420 may include a first reflective layer 421 and a first grid network 422, and the first reflective layer 421 is formed on the first grid network 422. The first reflective structure 420 is used to prevent light from being transmitted between different wavelength conversion units 410. The material of the first reflective layer 421 may be metal, and the material of the first grid network may be resin. By selecting a resin material combined with a metal reflective layer to prepare a first reflective structure 420 corresponding to wrapping a single light-emitting unit 110, optical blocking and enhanced thermal conductivity can be achieved. After completing the preparation of the wavelength conversion unit 410, the following can be obtained. Figure 1 The display device shown.
[0112] An embodiment of the present application further provides a display device, which includes the display device as described above.
[0113] The display device described in the embodiment of the present application includes the above-mentioned display device, and the display device includes a heat insulation structure. Since the heat insulation structure includes an overhead unit, and the wavelength conversion unit is formed on the overhead unit, the heat generated by the light-emitting unit can be reduced from being transferred to the wavelength conversion unit, thereby slowing down the aging of the wavelength conversion unit, extending the life of the wavelength conversion unit, and further improving the light-emitting efficiency and life of the display device. Therefore, the electronic device also has similar advantages.
[0114] It should be noted that the above-mentioned sequence of the embodiments of the present application is for description only and does not represent the advantages and disadvantages of the embodiments. The above-mentioned specific embodiments of this specification are described. Other embodiments are within the scope of the attached claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the embodiments and still achieve the desired results. In addition, the processes depicted in the drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.
[0115] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.
[0116] A person skilled in the art will understand that all or part of the steps to implement the above embodiments may be accomplished by hardware or by instructing related hardware through a program, and the program may be stored in a computer-readable storage medium, and the above-mentioned storage medium may be a read-only memory, a disk or an optical disk, etc.
[0117] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.
Claims
1. A display device, characterized in that: include: A substrate (10), wherein a preset number of light-emitting units (110) arranged at intervals are formed in the substrate (10); a planarization layer (20), the planarization layer (20) being formed on the substrate (10), the planarization layer (20) filling the spaces between the light-emitting units (110) and allowing light emitted by the light-emitting units (110) to pass through; A heat insulation structure (30), the heat insulation structure (30) comprising at least one overhead unit (310), the overhead unit (310) comprising a support foot (311) and an overhead layer (312); the support foot (311) is formed on the planarization layer (20), and the overhead layer (312) is formed in a suspended manner on the support foot (311); a wavelength conversion layer (40), the wavelength conversion layer (40) comprising a preset number of wavelength conversion units (410) arranged at intervals, the wavelength conversion units (410) being formed on the overhead layer (312) and used for converting light emitted by the corresponding light-emitting units (110) into light of a preset color; The heat insulating structure (30) further comprises a heat conducting layer (320), wherein the heat conducting layer (320) is formed between adjacent overhead units (310), and the heat conducting layer (320) seals the gaps between the legs (311) in the overhead units (310), so that a heat insulating cavity is formed inside the overhead units (310).
2. The display device according to claim 1, characterized in that The number of the overhead units (310) is equal to the number of the light-emitting units (110), and they correspond one to one.
3. The display device according to claim 2, characterized in that Each of the overhead units (310) comprises at least two supporting legs (311).
4. The display device according to claim 1, characterized in that The material of the overhead layer (312) is a heat-insulating material.
5. The display device according to claim 1, characterized in that The thickness of the heat-conducting layer (320) is less than or equal to the height of the overhead unit (310); The heat-conducting layer (320) is made of metal.
6. The display device according to claim 1 or 5, characterized in that: The wavelength conversion layer (40) further includes a first light reflecting structure (420); The first light-reflecting structure (420) comprises a first reflective layer (421) and a first grid network (422), wherein the first reflective layer (421) is formed on the first grid network (422); The first reflective layer (421) is at least partially in contact with the heat conductive layer (320).
7. The display device according to claim 1, characterized in that The preset number of wavelength conversion units (410) at least includes a first wavelength conversion unit (410) and a second wavelength conversion unit (410); The first wavelength conversion unit (410) is used to convert the light emitted by the corresponding light emitting unit (110) into light of a first color; The second wavelength conversion unit (410) is used to convert the light emitted by its corresponding light emitting unit (110) into light of a second color.
8. The display device according to claim 1, characterized in that A second light reflecting structure (120) is also formed in the substrate (10), and the second light reflecting structure (120) is formed between adjacent light emitting units (110); The second light-reflecting structure (120) comprises a second reflective layer (121) and a second grid network (122); the second reflective layer (121) is formed on the second grid network (122).
9. A method for forming a display device, characterized in that: The method comprises: A substrate (10) is provided; a preset number of light-emitting units (110) arranged at intervals are formed in the substrate (10); A planarization layer (20) is formed on the substrate (10); the planarization layer (20) fills the spaces between the light-emitting units (110) and allows light emitted by the light-emitting units (110) to pass through; A heat insulation structure (30) is formed on the planarization layer (20); the heat insulation structure (30) comprises at least one overhead unit (310), and the overhead unit (310) comprises a support foot (311) and an overhead layer (312); the support foot (311) is formed on the planarization layer (20), and the overhead layer (312) is formed in a suspended manner on the support foot (311); A wavelength conversion layer (40) is formed on the heat insulation structure (30); the wavelength conversion layer (40) comprises a preset number of wavelength conversion units (410) arranged at intervals, the wavelength conversion units (410) being formed on the overhead layer (312) and used for converting light emitted by the light-emitting unit (110) into light of a preset color; The heat insulation structure (30) is formed on the planarization layer (20), comprising: forming a sacrificial layer (50) on the planarization layer (20); A preset number of holes (510) are formed on the sacrificial layer (50); the holes (510) penetrate the sacrificial layer (50) to expose the surface of the planarization layer (20); Forming a support foot (311) in the hole (510) and forming an overhead layer (312) on the sacrificial layer (50); The sacrificial layer (50) is removed, so that the overhead layer (312) is suspended on the support foot (311), thereby obtaining a heat insulation structure (30) including at least one overhead unit (310).
10. The method according to claim 9, characterized in that The step of forming a planarization layer (20) on the substrate (10) comprises: A heat insulating material is filled in the spaces between the light-emitting units (110) to obtain a planarization layer (20) formed on the substrate.
11. The method according to claim 9, characterized in that The sacrificial layer (50) is removed, so that the overhead layer (312) is suspended on the support foot (311), thereby obtaining a heat insulation structure (30) including at least one overhead unit (310), comprising: The sacrificial layer (50) is removed, so that the overhead layer (312) is suspended on the support foot (311), thereby obtaining at least one overhead unit (310); A heat-conducting layer (320) is formed between adjacent overhead units (310) to seal the gaps between the legs (311) in the overhead units (310), so that a heat-insulating cavity is formed inside the overhead units (310), thereby obtaining the heat-insulating structure (30).
12. The method according to claim 9, characterized in that The material of the sacrificial layer is silicon oxide, and the method of removing the sacrificial layer is wet etching.
13. The method according to claim 11, characterized in that The step of forming a wavelength conversion layer (40) on the heat insulation structure (30) comprises: forming a first light reflecting structure (420) on the heat conducting layer (320); A wavelength conversion unit (410) is formed on the overhead layer (312) and between the first light-reflecting structures (420), thereby obtaining the wavelength conversion layer (40).
14. The method according to claim 13, characterized in that The wavelength conversion unit (410) is formed on the overhead layer (312) and between the first light-reflecting structures (420) to obtain the wavelength conversion layer (40), comprising: A color conversion material filling the spaces between the first light-reflecting structures (420) is formed on the overhead layer (312) as the wavelength conversion unit (410), thereby obtaining the wavelength conversion layer (40).
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