Double-layer substrate integrated waveguide resonator based on loading capacitor patch
By using loading capacitor patches and rectangular slots in a dual-layer substrate integrated waveguide resonator, the intrinsic resonance frequency of the resonator is solved, and the microstrip line filter has high signal loss and narrow bandwidth when operating at high frequency. A high-performance multi-band bandpass filter is realized.
Patent Information
- Application Number
- CN202411615137.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-13
- Publication Date
- 2025-02-18
AI Technical Summary
Existing microstrip line filters have high signal loss and narrow available bandwidth when operating at high frequencies, limiting their performance in higher frequency applications.
Using a dual-layer substrate integrated waveguide resonator based on loading capacitor patches, the capacitor patch is placed between the double-layer SIW, and the intrinsic resonance frequency of the resonator is controlled by adjusting the capacitor patch and rectangular groove to achieve the resonance mode and Controllable transmission zero point.
The controllable center frequency and bandwidth are achieved, and the insertion loss and return loss are reduced. Compared with the microstrip bandpass filter, it can realize a dual-band bandpass filter without adding circuit structure.
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Figure CN119481653A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the fields of waveguide technology and microstrip line technology of millimeter wave communication systems, and in particular to a double-layer substrate integrated waveguide resonator based on a loaded capacitor patch. Background Art
[0002] The advantages of microstrip line filters are that they are easy to process and integrate, have flexible mode control, and can be easily adjusted to meet specific design requirements, which makes them widely used in various RF and microwave circuits. However, microstrip line filters have disadvantages when working at high frequencies, such as high signal loss and narrow available bandwidth, which limit their performance in higher frequency applications.
[0003] In contrast, substrate integrated waveguide (SIW) filters can support higher cutoff frequencies and wider operating bandwidths while maintaining low losses by simulating the boundary conditions of traditional waveguides. This feature makes SIW filters ideal for high-frequency and broadband applications. In addition, through carefully designed degenerate mode perturbations and loaded perturbation structures, SIW filters can achieve multi-mode resonance, thereby enhancing the selectivity of the filter and the ability to suppress out-of-band interference. However, the complex structure of SIW filters may increase the difficulty and cost of manufacturing, and relative to microstrip line filters, they may require larger physical sizes to achieve the same function. Summary of the invention
[0004] The present application provides a double-layer substrate integrated waveguide resonator based on a loaded capacitor patch, which includes, from top to bottom, an upper surface metal copper coating, an upper dielectric plate, an intermediate metal copper coating, a lower dielectric plate, and a lower surface metal copper coating;
[0005] The intermediate metal copper cladding includes a loading capacitor patch, and microstrip line feeding parts are respectively connected to both sides of the loading capacitor patch, and the microstrip line feeding parts are arranged on the center line of the loading capacitor patch;
[0006] The upper dielectric plate and the lower dielectric plate are both provided with two groups of periodically arranged metal through holes, and the center of the loading capacitor patch is provided with a rectangular groove.
[0007] Furthermore, the relative dielectric constants of the upper dielectric plate and the lower dielectric plate are both 2.2, and the thicknesses are both 0.508 mm.
[0008] Furthermore, the length and width of the upper dielectric plate and the upper surface copper metal coating are both 13.6 mm.
[0009] Furthermore, the length of the lower dielectric plate and the lower surface metal copper cladding are both 27.54 mm, and the width are both 13.6 mm.
[0010] Furthermore, the period of the metal through holes is 1 mm, the diameter of the metal through holes is 0.8 mm, and the width between two groups of periodically arranged metal through holes is 3.2 mm.
[0011] Furthermore, the distance between the two groups of periodically arranged metal through holes on the upper dielectric plate and the edge of the dielectric plate is 0.4 mm.
[0012] Furthermore, the two groups of periodically arranged metal through holes on the lower dielectric plate are 0.4 mm away from the lower edge of the dielectric plate and 7.37 mm away from the left edge of the dielectric plate.
[0013] Furthermore, the length of the loading capacitor patch is 10.8 mm and the width is 9.7 mm; the length of the rectangular groove is 6.9 mm and the width is 1 mm.
[0014] Further, the microstrip line feeding part includes a connecting part, a trapezoidal microstrip gradient structure and a 50Ω microstrip line;
[0015] The connecting portion is connected to the loading capacitor patch, the trapezoidal microstrip gradient structure is connected to the connecting portion, and the 50Ω microstrip line is connected to the trapezoidal microstrip gradient structure.
[0016] Furthermore, the length of the connecting portion is 4.95 mm and the width is 1.8 mm; the length of the trapezoidal microstrip gradient structure is 0.97 mm; the length of the 50Ω microstrip line is 3 mm and the width is 1.542 mm.
[0017] The double-layer substrate integrated waveguide resonator based on the loaded capacitor patch provided by the present application places the capacitor patch between the double-layer SIW, and controls the intrinsic resonant frequency of the resonator by adjusting the capacitor patch and the rectangular slot, so as to realize the controllable resonant mode and transmission zero point, thereby realizing the controllable center frequency and bandwidth. The double-layer substrate integrated waveguide resonator loaded with the capacitor patch is used for mode control, and both the cavity mode and the patch mode can be generated at the same time. Compared with the microstrip bandpass filter, the insertion loss and return loss performance of the present application are better, and the mode can be tuned by utilizing the variability of the size of the capacitor patch and the size of the rectangular slot. Without increasing the circuit structure, a dual-band bandpass filter can be realized with only one double-layer substrate integrated waveguide resonator. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0019] Figure 1 A three-dimensional diagram of a double-layer substrate integrated waveguide resonator based on a loaded capacitor patch provided in this application;
[0020] Figure 2 A top view of the second layer of the double-layer substrate integrated waveguide resonator based on the loaded capacitor patch provided by the present application;
[0021] Figure 3 A top view of the fourth layer of the double-layer substrate integrated waveguide resonator based on the loaded capacitor patch provided by the present application;
[0022] Figure 4 A top view of the third layer of the double-layer substrate integrated waveguide resonator based on the loaded capacitor patch provided by the present application;
[0023] Figure 5 The electric field distribution diagrams of the first 8 resonance modes provided in this application;
[0024] Figure 6 The eigenmode resonant frequency and l provided in this application y Relationship diagram;
[0025] Figure 7 This is a diagram of the S-parameter simulation results of the multi-mode dual-band bandpass filter provided in this application. DETAILED DESCRIPTION
[0026] The specific implementation methods of the present application are further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present application but are not intended to limit the scope of the present application.
[0027] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.
[0028] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0029] References to "one embodiment" or "some embodiments" etc. described in the specification of this application mean that one or more embodiments of the present application include specific features, structures or characteristics described in conjunction with the embodiment. Therefore, the phrases "in one embodiment", "in some embodiments", "in some other embodiments", "in some other embodiments", etc. appearing in different places in this specification do not necessarily refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in other ways.
[0030] Different from the traditional method of simply utilizing substrate integrated waveguide or microstrip technology, the present application proposes a double-layer substrate integrated waveguide resonator loaded with a capacitor patch, in which the capacitor patch is placed between the double-layer SIW. By adjusting the capacitor patch and the rectangular slot to control the intrinsic resonant frequency of the resonator, the resonant mode and the transmission zero point can be controlled, thereby realizing a multi-frequency filter with controllable center frequency and bandwidth.
[0031] The specific implementation methods of the present application are further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present application but are not intended to limit the scope of the present application.
[0032] like Figure 1 As shown, an embodiment of the present application provides a double-layer substrate integrated waveguide resonator based on a loaded capacitor patch, which includes, from top to bottom, an upper surface metal copper clad, an upper dielectric plate, an intermediate metal copper clad, a lower dielectric plate and a lower surface metal copper clad; the intermediate metal copper clad includes a loaded capacitor patch, and microstrip line feeding parts are respectively connected to both sides of the loaded capacitor patch, and the microstrip line feeding parts are arranged on the center line of the loaded capacitor patch; two groups of periodically arranged metal through holes are opened on the upper dielectric plate and the lower dielectric plate, and a rectangular groove is opened in the center of the loaded capacitor patch.
[0033] In some embodiments, the relative dielectric constants of the upper dielectric plate and the lower dielectric plate are both 2.2, and the thicknesses are both 0.508 mm.
[0034] In some embodiments, the length and width of the upper dielectric board and the upper surface metal copper cladding are both 13.6 mm.
[0035] In some embodiments, the length of the lower dielectric board and the lower surface metal copper cladding are both 27.54 mm, and the width are both 13.6 mm.
[0036] The structure of the double-layer substrate integrated waveguide resonator loaded with capacitor patch is as follows Figure 1 As shown, it consists of two layers of dielectric plates and metal copper cladding. The dielectric plates are all Roger RT 5880 with a relative dielectric constant of ε r =2.2, the thickness of the dielectric plate is 0.508mm, the upper surface of the upper dielectric plate is the first layer, the upper dielectric plate is the second layer, the length and width are L = 13.6mm; the metal copper clad on the lower surface of the upper dielectric plate and the microstrip line feed is the third layer, the lower dielectric plate is the fourth layer, and the metal copper clad on the lower surface of the lower dielectric plate is the fifth layer, with a length of W = 27.54mm and a width of L = 13.6mm. The center of the capacitor patch on the third layer is embedded with a rectangular groove; in the middle of the fourth dielectric plate, that is, in the middle of the resonant cavity, two rows of metal through holes forming a perceptual window are designed.
[0037] In some embodiments, the period of the metal through holes is 1 mm, the diameter of the metal through holes is 0.8 mm, and the width between two groups of periodically arranged metal through holes is 3.2 mm.
[0038] In some embodiments, the distance between the two groups of periodically arranged metal through holes on the upper dielectric plate and the edge of the dielectric plate is 0.4 mm.
[0039] In some embodiments, the two groups of periodically arranged metal through holes on the lower dielectric plate are 0.4 mm away from the lower edge of the dielectric plate and 7.37 mm away from the left edge of the dielectric plate.
[0040] like Figure 2 As shown, it is a top view of the second layer. There are periodically arranged metal through holes around the dielectric plate. The period is the distance between the centers of two through holes, the size is p = 1mm, the diameter of the through hole is d = 0.8mm, the width at the opening is D1 = 3.2mm, and the distance between the metal through hole and the edge of the dielectric plate is D2 = 0.4mm.
[0041] like Figure 3 As shown, it is a top view of the 4th layer. There are periodically arranged metal through holes in the middle of the dielectric plate. The period is the distance between the centers of two through holes, the size is p = 1mm, the diameter of the through hole is d = 0.8mm, the width at the opening is D1 = 3.2mm, the distance between the metal through hole and the lower edge of the dielectric plate is D2 = 0.4mm, and the distance from the left edge of the dielectric plate is D0 = 7.37mm.
[0042] In some embodiments, the length of the loading capacitor patch is 10.8 mm and the width is 9.7 mm; the length of the rectangular groove is 6.9 mm and the width is 1 mm.
[0043] In some embodiments, the microstrip line feeding part includes a connecting part, a trapezoidal microstrip gradient structure and a 50Ω microstrip line; the connecting part is connected to the loading capacitor patch, the trapezoidal microstrip gradient structure is connected to the connecting part, and the 50Ω microstrip line is connected to the trapezoidal microstrip gradient structure.
[0044] In some embodiments, the length of the connecting portion is 4.95 mm and the width is 1.8 mm; the length of the trapezoidal microstrip gradient structure is 0.97 mm; and the length of the 50Ω microstrip line is 3 mm and the width is 1.542 mm.
[0045] like Figure 4 The top view of layer 3 is shown in Figure 2. The loading capacitor patch is located in the middle and its size is w. x =9.7mm, w y =10.8mm, the size of the rectangular groove in the middle of the capacitor patch is l x =1mm, l y =6.9mm, the microstrip line feeding part is located at both ends of the capacitor patch, and the distance from the center line of the resonator is D in =0.9mm, consisting of three sections. The first section connects the capacitor patch, with dimensions of W0=1.8mm, L0=4.95mm. The second section is a trapezoidal microstrip gradient structure with a length of L2=0.97mm. The third section is a 50Ω microstrip line, which is used to connect the filter to other circuits or standard RF connectors, with dimensions of W1=1.542mm, L1=3mm.
[0046] The double-layer substrate integrated waveguide resonator loaded with capacitor patches provides the basic structure of the resonator, supporting multiple modes of resonance, including cavity mode and patch mode. These modes work together to form the multi-band characteristics of the filter.
[0047] The function of the third layer of capacitor patch is to perform mode control, resonant frequency adjustment and generate patch mode. When the size of the capacitor patch is very small, less than 1 / 15 of the size of the resonant cavity, there is only a cavity mode in the double-layer substrate integrated waveguide resonator loaded with the capacitor patch in the low frequency band; when the size of the capacitor patch is larger, there are two modes, cavity mode and patch mode, in the double-layer substrate integrated waveguide resonator loaded with the capacitor patch in the low frequency band, which can realize hybrid multi-mode resonance. The size of the capacitor patch proposed in this application is 7 / 10 of the size of the resonant cavity. The intrinsic resonant modes of the double-layer substrate integrated waveguide resonator loaded with the capacitor patch select the first 8 resonant modes for analysis. The operating frequency range is 0 to 22 GHz. The distribution diagram of the electric field amplitude is shown in the figure. Figure 5 shown.
[0048] By cutting slots in the capacitor patch on layer 3, the mode resonant frequency can be controlled, thereby affecting the center frequency and bandwidth. Figure 5 The first eight resonance modes of the double-layer SIWR are given, such as Figure 6 As shown, when the length of the rectangular slot l is increased y , the resonant frequency of mode 2 approaches mode 1, so that the two modes form the first passband, and the resonant frequency of mode 5 also decreases accordingly.
[0049] The metal through holes of the middle two rows of inductive windows in the fourth layer are located at the strongest electric field of modes 1 and 5. Increasing the distance between the through holes and adjusting the size of the rectangular slots can optimize the first passband and the second passband. The location and size of the through holes determine the resonant frequencies of these modes, which in turn affects the overall frequency response of the filter.
[0050] The feeding structure of the third layer is a pair of microstrip lines with an impedance of 50Ω, which forms impedance matching. The location of the feeding line is crucial to the excitation of each resonant mode. It is located on the center line of the capacitor patch to ensure that modes 1, 2, and 5 can be properly excited. This layout helps to achieve the desired multi-band response.
[0051] like Figure 7 Figure 1 shows the S parameter simulation results of the multimode dual-band bandpass filter. The center frequencies of the two passbands are 6.6 GHz and 12.8 GHz, the bandwidths are 2.13 GHz and 170 MHz, the insertion losses are 0.16 dB and 1.12 dB, and a transmission zero appears on the right side of the second passband.
[0052] This scheme proposes a double-layer substrate integrated waveguide resonator loaded with a capacitor patch, and designs a multi-mode dual-band filter with it, which has the advantages of compact structure and controllable frequency. The common dual-mode three-band bandpass filter has a narrow bandwidth, and the first passband bandwidth of this scheme is wider. The double-layer substrate integrated waveguide resonator loaded with a capacitor patch is used for mode control, and both cavity mode and patch mode can be generated at the same time. Compared with the microstrip bandpass filter, the insertion loss and return loss performance of this scheme are better. The mode can be tuned by utilizing the variability of the size of the capacitor patch and the size of the rectangular slot.
[0053] By performing mode control through the double-layer substrate integrated waveguide resonator based on the loaded capacitor patch proposed in this application, both the cavity mode and the patch mode can be generated simultaneously. Without adding a circuit structure, a dual-band bandpass filter is realized with only one double-layer substrate integrated waveguide resonator.
[0054] Those skilled in the art can clearly understand that for the convenience and simplicity of description, only the division of the above-mentioned functional units and modules is used as an example for illustration. In actual applications, the above-mentioned functions can be assigned to different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiments can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. In addition, the specific names of the functional units and modules are only for the convenience of distinguishing each other, and are not used to limit the scope of protection of this application.
[0055] It should be clear that the various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. The present application is not limited to the specific structures described above and shown in the figures. In addition, for the sake of simplicity, detailed descriptions of known methods and technologies are omitted here.
[0056] The embodiments described above are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, a person skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.
Claims
1. A double-layer substrate integrated waveguide resonator based on a loaded capacitor patch, characterized in that: From top to bottom, it includes upper surface copper metal cladding, upper dielectric plate, middle copper metal cladding, lower dielectric plate and lower surface copper metal cladding; The intermediate metal copper cladding includes a loading capacitor patch, and microstrip line feeding parts are respectively connected to both sides of the loading capacitor patch, and the microstrip line feeding parts are arranged on the center line of the loading capacitor patch; The upper dielectric plate and the lower dielectric plate are both provided with two groups of periodically arranged metal through holes, and the center of the loading capacitor patch is provided with a rectangular groove.
2. The double-layer substrate integrated waveguide resonator based on a loaded capacitor patch as claimed in claim 1, characterized in that: The relative dielectric constants of the upper dielectric plate and the lower dielectric plate are both 2.2, and the thicknesses are both 0.508 mm.
3. The double-layer substrate integrated waveguide resonator based on a loaded capacitor patch as claimed in claim 1, characterized in that: The length and width of the upper dielectric plate and the upper surface copper metal coating are both 13.6 mm.
4. The double-layer substrate integrated waveguide resonator based on loaded capacitor patch according to claim 1, characterized in that: The length of the lower dielectric plate and the lower surface copper metal coating are both 27.54 mm, and the width is both 13.6 mm.
5. The double-layer substrate integrated waveguide resonator based on loaded capacitor patch according to claim 1, characterized in that: The period of the metal through holes is 1 mm, the diameter of the metal through holes is 0.8 mm, and the width between two groups of periodically arranged metal through holes is 3.2 mm.
6. The double-layer substrate integrated waveguide resonator based on loaded capacitor patch according to claim 1, characterized in that: The distance between the two groups of periodically arranged metal through holes on the upper dielectric plate and the edge of the dielectric plate is 0.4 mm.
7. The double-layer substrate integrated waveguide resonator based on loaded capacitor patch according to claim 1, characterized in that: The two groups of periodically arranged metal through holes on the lower dielectric plate are 0.4 mm away from the lower edge of the dielectric plate and 7.37 mm away from the left edge of the dielectric plate.
8. The double-layer substrate integrated waveguide resonator based on loaded capacitor patch according to claim 1, characterized in that: The length of the loading capacitor patch is 10.8 mm and the width is 9.7 mm; the length of the rectangular groove is 6.9 mm and the width is 1 mm.
9. The double-layer substrate integrated waveguide resonator based on loaded capacitor patch according to claim 1, characterized in that: The microstrip line feeding part includes a connecting part, a trapezoidal microstrip gradient structure and a 50Ω microstrip line; The connecting portion is connected to the loading capacitor patch, the trapezoidal microstrip gradient structure is connected to the connecting portion, and the 50Ω microstrip line is connected to the trapezoidal microstrip gradient structure.
10. The double-layer substrate integrated waveguide resonator based on loaded capacitor patch according to claim 9, characterized in that: The length of the connecting part is 4.95 mm and the width is 1.8 mm; the length of the trapezoidal microstrip gradient structure is 0.97 mm; the length of the 50Ω microstrip line is 3 mm and the width is 1.542 mm.