Nitride semiconductor laser with light field control layer

Abstract

The application provides a nitride semiconductor laser with an optical field regulation layer, comprising, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer, wherein the lower waveguide layer comprises a first lower waveguide layer and a second lower waveguide layer, the first lower waveguide layer is located below the second lower waveguide layer, a first optical field regulation layer is arranged between the first lower waveguide layer and the lower limiting layer, a second optical field regulation layer is arranged between the first lower waveguide layer and the second lower waveguide layer, the first lower waveguide layer, the second lower waveguide layer and the second optical field regulation layer all have an In element concentration variation trend, and the first optical field regulation layer has an Al element concentration variation trend. The application can inhibit the refractive index dispersion of the laser, reduce the influence of the high-concentration carrier concentration fluctuation of the lower waveguide layer on the refractive index variation of the active layer and the lower waveguide layer, improve the confinement factor of the laser and enhance the mode gain of the laser.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor optoelectronic devices, and in particular to a nitride semiconductor laser with a light field regulation layer. BACKGROUND

[0002] Laser is widely used in laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, ranging, spectrum analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also various. The main types of lasers include solid, gas, liquid, semiconductor and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long service life, simple and compact structure, and small size.

[0003] There are great differences between laser and nitride semiconductor light-emitting diode:

[0004] 1) Laser is generated by stimulated radiation of carriers, with small spectral half-width and high brightness. The output power of a single laser can reach W level, while the output power of a single nitride semiconductor light-emitting diode is in mW level.

[0005] 2) The current density of laser is up to KA / cm2, which is more than 2 orders of magnitude higher than that of nitride light-emitting diode, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency decay Droop effect;

[0006] 3) Light-emitting diode is spontaneously transitioned and radiated without external action, and the incoherent light is transitioned from high energy level to low energy level. Laser is stimulated transition radiation, and the energy of induced photon should be equal to the energy level difference of electron transition. The generated photon and induced photon are homophase coherent light.

[0007] 4) Different principles: Light-emitting diode is under the action of external voltage, and electron-hole is transitioned to quantum well or p-n junction to produce radiation recombination. Laser needs to meet the lasing conditions, and must meet the carrier inversion distribution of active region. The stimulated radiation light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. When the threshold condition is met, the gain is greater than the loss, and finally the laser is output.

[0008] The nitride semiconductor laser has the following problems: the internal light absorption loss of the laser includes impurity absorption loss, free carrier absorption loss of high-doped confinement layer, carrier absorption loss, waveguide structure sidewall scattering loss and quantum well absorption loss; the light waveguide impurity absorption loss is high, the intrinsic carbon impurity in the p-type semiconductor can compensate the acceptor and destroy the p-type, the ionization rate of the p-type doping is low (less than 10%), and a large number of un-ionized Mg acceptor impurities (more than 90%) can cause self-compensation effect and cause the internal optical loss to rise, resulting in the decrease of the slope efficiency of the laser and the increase of the threshold current. SUMMARY

[0009] To solve one of the above technical problems, the application provides a nitride semiconductor laser with an optical field regulation layer.

[0010] The application provides a nitride semiconductor laser with an optical field regulation layer, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer, wherein the lower waveguide layer comprises a first lower waveguide layer and a second lower waveguide layer, the first lower waveguide layer is located below the second lower waveguide layer, a first optical field regulation layer is arranged between the first lower waveguide layer and the lower confinement layer, a second optical field regulation layer is arranged between the first lower waveguide layer and the second lower waveguide layer, the first lower waveguide layer, the second lower waveguide layer and the second optical field regulation layer all have a change trend of In element concentration, the change angle of In element concentration in the first lower waveguide layer is 0° to 30°, the change angle of In element concentration in the second lower waveguide layer is 0° to 60°, the change angle of In element concentration in the second optical field regulation layer is 45° to 90°, the first optical field regulation layer has a change trend of Al element concentration, and the change angle of Al element concentration in the first optical field regulation layer is 45° to 90°, wherein the angle is the inclination angle of the tangent of the curve.

[0011] Preferably, the change angle of In element concentration in the first lower waveguide layer ≤ the change angle of In element concentration in the second lower waveguide layer ≤ the change angle of In element concentration in the second optical field regulation layer ≤ the change angle of Al element concentration in the first optical field regulation layer.

[0012] Preferably, the first lower waveguide layer, the second lower waveguide layer, the first light field modulation layer and the second light field modulation layer all have refractive index coefficient characteristics, the peak position of the refractive index coefficient of the first lower waveguide layer changes by an angle a to the down-limit layer: 0°≤a≤45°, the peak position of the refractive index coefficient of the second lower waveguide layer changes by an angle β to the down-limit layer: 10°≤β≤45°, the peak position of the refractive index coefficient of the first light field modulation layer changes by an angle γ to the down-limit layer: 45°≤γ≤90°, the peak position of the refractive index coefficient of the second light field modulation layer changes by an angle θ to the down-limit layer: 45°≤θ≤90°, and a≤β≤45°≤θ≤γ≤90°.

[0013] Preferably, the first lower waveguide layer, the second lower waveguide layer, the first light field modulation layer and the second light field modulation layer all have peak rate electric field characteristics, the valley position of the peak rate electric field of the first lower waveguide layer changes by an angle ω to the down-limit layer: 0°≤ω≤45°, the valley position of the peak rate electric field of the second lower waveguide layer changes by an angle δ to the down-limit layer: 10°≤δ≤45°, the valley position of the peak rate electric field of the first light field modulation layer changes by an angle ψ to the down-limit layer: 45°≤ψ≤90°, the valley position of the peak rate electric field of the second light field modulation layer changes by an angle ε to the down-limit layer: 45°≤ε≤90°, and ω≤δ≤45°≤ε≤ψ≤90°.

[0014] Preferably, the first lower waveguide layer, the second lower waveguide layer, the first light field modulation layer and the second light field modulation layer all have radiation recombination coefficient characteristics, the peak position of the radiation recombination coefficient of the first lower waveguide layer changes by an angle σ to the down-limit layer: 0°≤σ≤45°, the peak position of the radiation recombination coefficient of the second lower waveguide layer changes by an angle μ to the down-limit layer: 10°≤μ≤45°, the peak position of the radiation recombination coefficient of the first light field modulation layer changes by an angle to the down-limit layer: 45°≤σ≤90°, and the peak position of the radiation recombination coefficient of the second light field modulation layer changes by an angle ρ to the down-limit layer: 45°≤ρ≤90°, and

[0015] Preferably, the first lower waveguide layer, the second lower waveguide layer, the first optical field modulation layer and the second optical field modulation layer all have optical absorption coefficient characteristics, the valley position of the optical absorption coefficient of the first lower waveguide layer to the lower limiting layer has a change angle τ of 0°≤τ≤45°, the valley position of the optical absorption coefficient of the second lower waveguide layer to the lower limiting layer has a change angle υ of 10°≤υ≤45°, the valley position of the optical absorption coefficient of the first optical field modulation layer to the lower limiting layer has a change angle χ of 45°≤χ≤90°, the valley position of the optical absorption coefficient of the second optical field modulation layer to the lower limiting layer has a change angle ζ of 45°≤ζ≤90°, and τ≤υ≤45°≤ζ≤χ≤90°.

[0016] Preferably, the first optical field modulation layer has a function y1=Cx1+D curve distribution of the radiative recombination coefficient, the second optical field modulation layer has a fourth quadrant curve distribution of the function y2=A+B*x2 / lnx2 of the radiative recombination coefficient, the first optical field modulation layer has a function y3=Ex1+F curve distribution of the refractive index coefficient, and the second optical field modulation layer has a fourth quadrant curve distribution of the function y4=G+H*x2 / lnx2 of the refractive index coefficient, x1 is the depth of the first optical field modulation layer to the first lower waveguide layer, and x2 is the depth of the second optical field modulation layer to the second lower waveguide layer.

[0017] Preferably, the first optical field modulation layer and the second optical field modulation layer also have static dielectric constant characteristics and high-frequency dielectric constant characteristics, the first optical field modulation layer has a function y5=Jx1+K curve distribution of the static dielectric constant, the second optical field modulation layer has a fourth quadrant curve distribution of the function y6=L+M*x2 / lnx2 of the static dielectric constant, the first optical field modulation layer has a function y7=Nx1+P curve distribution of the high-frequency dielectric constant, and the second optical field modulation layer has a fourth quadrant curve distribution of the function y8=Q+R*x2 / lnx2 of the high-frequency dielectric constant, wherein D≤F≤P≤K, A≤G≤Q≤L.

[0018] Preferably, the first optical field modulation layer and the second optical field modulation layer are any one or any combination of InGaN, InN, AlInGaN, GaN, AlGaN, InGaN / GaN superlattice, InGaN / AlInN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, GaN / AlInGaN superlattice, GaN / AlInN superlattice, GaN / AlGaN superlattice, InGaN / InGaN superlattice, AlInGaN / AlInGaN superlattice, or any combination with GaN.

[0019] Preferably, the active layer is a periodic structure composed of well layers and barrier layers, the number of periods is 3≥m≥1, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, and the thickness is 10 angstrom meters to 150 angstrom meters; the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, and the thickness is 10 angstrom meters to 200 angstrom meters.

[0020] Preferably, the lower confinement layer, the lower waveguide layer, the upper waveguide layer, the electron blocking layer, and the upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond.

[0021] Preferably, the substrate is a single crystal substrate, which is any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, sapphire / SiN x , sapphire / SiO2 / SiN x composite substrate, sapphire / SiN x / SiO2 composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0022] The beneficial effects of the present application are as follows: the present application sets an optical field modulation layer in the nitride semiconductor laser, sets the variation angle of the In element concentration and the Al element concentration in the optical field modulation layer and the lower waveguide layer, suppresses the refractive index dispersion of the laser, reduces the refractive index variation of the active layer and the lower waveguide layer affected by the high concentration carrier concentration fluctuation of the lower waveguide layer, improves the confinement factor of the laser, and enhances the mode gain of the laser. BRIEF DESCRIPTION OF DRAWINGS

[0023] The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application. In the drawings:

[0024] Fig. 1 Structure schematic diagram of the nitride semiconductor laser with the optical field modulation layer according to the embodiments of the present application;

[0025] Fig. 2 SIMS secondary ion mass spectrum of the nitride semiconductor laser with the optical field modulation layer according to the embodiments of the present application;

[0026] Fig. 3 Partially enlarged SIMS secondary ion mass spectrum of the nitride semiconductor laser with the optical field modulation layer according to the embodiments of the present application.

[0027] Reference signs:

[0028] 100, substrate, 101, lower confinement layer, 102, lower waveguide layer, 103, active layer, 104, upper waveguide layer, 105, electron blocking layer, 106, upper confinement layer, 107, optical field modulation layer;

[0029] 102a, first lower waveguide layer, 102b, second lower waveguide layer;

[0030] 107a, first optical field modulation layer, 107b, second optical field modulation layer. DETAILED DESCRIPTION

[0031] In order to make the technical solutions and advantages of the embodiments of the present application clearer, the exemplary embodiments of the present application are further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all the embodiments. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0032] As Figs. 1 to 3As shown, the embodiment provides a nitride semiconductor laser with an optical field control layer, which comprises, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. The nitride semiconductor laser with the optical field control layer further comprises an optical field control layer 107.

[0033] Specifically, in the embodiment, the nitride semiconductor laser with the optical field control layer comprises, from bottom to top, the substrate 100, the lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106. The lower waveguide layer 102 has a double-layer structure, comprising a first lower waveguide layer 102a and a second lower waveguide layer 102b, wherein the first lower waveguide layer 102a is located below the second lower waveguide layer 102b. A first optical field control layer 107a is arranged between the first lower waveguide layer 102a and the lower confinement layer 101. A second optical field control layer 107b is arranged between the first lower waveguide layer 102a and the second lower waveguide layer 102b. The first optical field control layer 107a and the second optical field control layer 107b form the optical field control layer 107.

[0034] In the embodiment, the first lower waveguide layer 102a, the second lower waveguide layer 102b, and the second optical field control layer 107b have a variation trend of In element concentration, and the first optical field control layer 107a has a variation trend of Al element concentration. In the first lower waveguide layer 102a, the variation trend of In element concentration is a gradual variation trend, and the variation angle of the gradual variation is 0° to 30°. In the second lower waveguide layer 102b, the variation trend of In element concentration is a gradual variation trend, and the variation angle of the gradual variation is 0° to 60°. In the first optical field control layer 107a, the variation trend of Al element concentration is a sudden variation trend, and the variation angle of the sudden variation is 45° to 90°. In the second optical field control layer 107b, the variation trend of In element concentration is a sudden variation trend, and the variation angle of the sudden variation is 45° to 90°. The angle is the inclination angle of the tangent of the curve.

[0035] In the embodiment, the optical field control layer 107 is arranged in the nitride semiconductor laser, and the variation angles of the In element concentration and the Al element concentration in the optical field control layer 107 and the lower waveguide layer 102 are set to suppress the refractive index dispersion of the laser, reduce the influence of the high-concentration carrier concentration fluctuation of the lower waveguide layer 102 on the refractive index variation of the active layer 103 and the lower waveguide layer 102, improve the confinement factor of the laser, and enhance the mode gain of the laser.

[0036] Further, the first lower waveguide layer 102a has an In element concentration variation angle, the second lower waveguide layer 102b has an In element concentration variation angle, the second optical field regulation layer 107b has an In element concentration variation angle, and the first optical field regulation layer 107a has an Al element concentration variation angle, and the following relationship exists among them:

[0037] The In element concentration variation angle of the first lower waveguide layer 102a is less than the In element concentration variation angle of the second lower waveguide layer 102b, which is less than the In element concentration variation angle of the second optical field regulation layer 107b, which is less than the Al element concentration variation angle of the first optical field regulation layer 107a.

[0038] By setting the relationship among the In element concentration variation angle of the first lower waveguide layer 102a, the In element concentration variation angle of the second lower waveguide layer 102b, the In element concentration variation angle of the second optical field regulation layer 107b, and the Al element concentration variation angle of the first optical field regulation layer 107a, the internal optical loss caused by Auger recombination and light absorption due to abnormal interface state when laser passes through the gain medium is reduced, and the slope efficiency of the laser is improved and the threshold current is reduced.

[0039] In some optional embodiments, the first lower waveguide layer 102a, the second lower waveguide layer 102b, the first optical field regulation layer 107a, and the second optical field regulation layer 107b all have refractive index coefficient characteristics. In addition, the refractive index coefficients in the first lower waveguide layer 102a, the second lower waveguide layer 102b, the first optical field regulation layer 107a, and the second optical field regulation layer 107b also have certain distribution characteristics.

[0040] Specifically, the peak position of the refractive index coefficient of the first lower waveguide layer 102a to the variation angle of the lower limiting layer 101 is a slow variation angle, and the variation angle α is: 0°≤α≤45°. The peak position of the refractive index coefficient of the second lower waveguide layer 102b to the variation angle of the lower limiting layer 101 is a slow variation angle, and the variation angle β is: 10°≤β≤45°. The peak position of the refractive index coefficient of the first optical field regulation layer 107a to the variation angle of the lower limiting layer 101 is a sudden variation angle, and the variation angle γ is: 45°≤γ≤90°. The peak position of the refractive index coefficient of the second optical field regulation layer 107b to the variation angle of the lower limiting layer 101 is a sudden variation angle, and the variation angle θ is: 45°≤θ≤90°, and α≤β≤45°≤θ≤γ≤90°.

[0041] In some alternative embodiments, the first lower waveguide layer 102a, the second lower waveguide layer 102b, the first light field modulation layer 107a and the second light field modulation layer 107b all have peak rate electric field characteristics. Moreover, the peak rate electric fields in the first lower waveguide layer 102a, the second lower waveguide layer 102b, the first light field modulation layer 107a and the second light field modulation layer 107b also have certain distribution characteristics.

[0042] Specifically, the valley position of the peak rate electric field of the first lower waveguide layer 102a limits the change angle of the lower limiting layer 101 to be a slow change angle, and the change angle ω is: 0°≤ω≤45°. The valley position of the peak rate electric field of the second lower waveguide layer 102b limits the change angle of the lower limiting layer 101 to be a slow change angle, and the change angle δ is: 10°≤δ≤45°. The valley position of the peak rate electric field of the first light field modulation layer 107a limits the change angle of the lower limiting layer 101 to be a sudden change angle, and the change angle ψ is: 45°≤ψ≤90°. The valley position of the peak rate electric field of the second light field modulation layer 107b limits the change angle of the lower limiting layer 101 to be a sudden change angle, and the change angle ε is: 45°≤ε≤90°, and ω≤δ≤45°≤ε≤ψ≤90°.

[0043] In some alternative embodiments, the first lower waveguide layer 102a, the second lower waveguide layer 102b, the first light field modulation layer 107a and the second light field modulation layer 107b all have radiation recombination coefficient characteristics. Moreover, the radiation recombination coefficients in the first lower waveguide layer 102a, the second lower waveguide layer 102b, the first light field modulation layer 107a and the second light field modulation layer 107b also have certain distribution characteristics.

[0044] Specifically, the peak position of the radiation recombination coefficient of the first lower waveguide layer 102a limits the change angle of the lower limiting layer 101 to be a slow change angle, and the change angle σ is: 0°≤σ≤45°. The peak position of the radiation recombination coefficient of the second lower waveguide layer 102b limits the change angle of the lower limiting layer 101 to be a slow change angle, and the change angle μ is: 10°≤μ≤45°. The peak position of the radiation recombination coefficient of the first light field modulation layer 107a limits the change angle of the lower limiting layer 101 to be a sudden change angle, and the change angle is: The peak position of the radiation recombination coefficient of the second light field modulation layer 107b limits the change angle of the lower limiting layer 101 to be a sudden change angle, and the change angle ρ is: 45°≤ρ≤90°, and

[0045] In some optional embodiments, the first lower waveguide layer 102a, the second lower waveguide layer 102b, the first light field regulation layer 107a and the second light field regulation layer 107b all have light absorption coefficient characteristics. Moreover, the light absorption coefficients in the first lower waveguide layer 102a, the second lower waveguide layer 102b, the first light field regulation layer 107a and the second light field regulation layer 107b also have certain distribution characteristics.

[0046] Specifically, the valley position of the light absorption coefficient of the first lower waveguide layer 102a limits the change angle of the lower limiting layer 101 to be a slow change angle, and the change angle τ is: 0°≤τ≤45°. The valley position of the light absorption coefficient of the second lower waveguide layer 102b limits the change angle of the lower limiting layer 101 to be a slow change angle, and the change angle υ is: 10°≤υ≤45°. The valley position of the light absorption coefficient of the first light field regulation layer 107a limits the change angle of the lower limiting layer 101 to be a sudden change angle, and the change angle χ is: 45°≤χ≤90°. The valley position of the light absorption coefficient of the second light field regulation layer 107b limits the change angle of the lower limiting layer 101 to be a sudden change angle, and the change angle ζ is: 45°≤ζ≤90°, and τ≤υ≤45°≤ζ≤χ≤90°.

[0047] In some optional embodiments, the first light field regulation layer 107a and the second light field regulation layer 107b have radiation recombination coefficient distribution characteristics, refractive index coefficient distribution characteristics, static dielectric constant distribution characteristics, and high-frequency dielectric constant distribution characteristics, which are specifically as follows:

[0048] (1) Radiation recombination coefficient distribution

[0049] The radiation recombination coefficient of the first light field regulation layer 107a has a function y1=Cx1+D curve distribution;

[0050] The radiation recombination coefficient of the second light field regulation layer 107b has a fourth quadrant curve distribution of the function y2=A+B*x2 / lnx2;

[0051] (2) Refractive index coefficient distribution

[0052] The refractive index coefficient of the first light field regulation layer 107a has a function y3=Ex1+F curve distribution;

[0053] The refractive index coefficient of the second light field regulation layer 107b has a fourth quadrant curve distribution of the function y4=G+H*x2 / lnx2;

[0054] (3) Static dielectric constant distribution

[0055] The static dielectric constant of the first light field regulation layer 107a has a function y5=Jx1+K curve distribution;

[0056] The static dielectric constant of the second light field regulation layer 107b has a fourth quadrant curve distribution of the function y6=L+M*x2 / lnx2;

[0057] (4) High-frequency dielectric constant distribution

[0058] The high-frequency dielectric constant of the first light field regulation layer 107a has a curve distribution of the function y7=Nx1+P;

[0059] The high-frequency dielectric constant of the second light field regulation layer 107b has a fourth quadrant curve distribution of the function y8=Q+R*x2 / lnx2;

[0060] Wherein, x1 is the depth of the first light field regulation layer 107a in the direction of the first lower waveguide layer 102a, x2 is the depth of the second light field regulation layer 107b in the direction of the second lower waveguide layer 102b, D≤F≤P≤K, A≤G≤Q≤L.

[0061] The embodiment sets the radiation recombination coefficient distribution, the refractive index coefficient distribution, the static dielectric constant distribution, and the high-frequency dielectric constant distribution of the first light field regulation layer 107a and the second light field regulation layer 107b, suppresses light field dissipation, suppresses light field mode leakage to the standing wave formed by the substrate 100, improves the substrate 100 mode suppression efficiency, improves the far-field image quality and beam quality factor, and reduces the internal light absorption loss caused by free carrier absorption, and improves the light confinement factor of the active layer 103.

[0062] In some optional embodiments, the first light field regulation layer 107a and the second light field regulation layer 107b are any one or any combination of InGaN, InN, AlInGaN, GaN, AlGaN, InGaN / GaN superlattice, InGaN / AlInN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, GaN / AlInGaN superlattice, GaN / AlInN superlattice, GaN / AlGaN superlattice, InGaN / InGaN superlattice, AlInGaN / AlInGaN superlattice, or any combination with GaN.

[0063] In some optional embodiments, the active layer 103 is a periodic structure composed of well layers and barrier layers, and the number of periods is 3≥m≥1, and m can be 1, 2, or 3.

[0064] Specifically, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, and has a thickness of 10 angstroms to 150 angstroms.

[0065] The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, and has a thickness of 10 angstroms to 200 angstroms.

[0066] Preferably, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond.

[0067] Preferably, the substrate 100 is a single crystal substrate, and is any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, a sapphire / SiO2 composite substrate 100, Mo, TiW, CuW, Cu, a sapphire / AlN composite substrate, diamond, a sapphire / SiN x , sapphire / SiO2 / SiN x composite substrate, a sapphire / SiN x / SiO2 composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0068] The following table is a comparison of the conventional semiconductor laser and the nitride semiconductor laser with light field regulation layer proposed in this embodiment, including beam quality factor, slope efficiency, threshold current density, confinement factor and internal optical loss, which shows the difference between the conventional semiconductor laser and the nitride semiconductor laser with light field regulation layer proposed in this embodiment:

[0069]

[0070] It can be seen that the nitride semiconductor laser with light field regulation layer proposed in this embodiment improves the beam quality factor, slope efficiency and confinement factor, reduces the threshold current density and internal optical loss compared with the conventional semiconductor laser, and has obvious advantages compared with the conventional semiconductor laser.

[0071] Obviously, those skilled in the art can make various modifications and variations to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application also intends to include these modifications and variations.

Claims

1. A nitride semiconductor laser having a light field control layer, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer, characterized in that, The lower waveguide layer comprises a first lower waveguide layer and a second lower waveguide layer, the first lower waveguide layer is located below the second lower waveguide layer, a first optical field regulation layer is arranged between the first lower waveguide layer and the lower limiting layer, a second optical field regulation layer is arranged between the first lower waveguide layer and the second lower waveguide layer, the first lower waveguide layer, the second lower waveguide layer and the second optical field regulation layer all have a change trend of In element concentration, the change angle of In element concentration in the first lower waveguide layer is 0° to 30°, the change angle of In element concentration in the second lower waveguide layer is 0° to 60°, the change angle of In element concentration in the second optical field regulation layer is 45° to 90°, the first optical field regulation layer has a change trend of Al element concentration, the change angle of Al element concentration in the first optical field regulation layer is 45° to 90°, and the angle is the tangent inclination angle along the curve.

2. The nitride semiconductor laser having a light field control layer according to claim 1, characterized by, The change angle of In element concentration in the first lower waveguide layer is ≤ the change angle of In element concentration in the second lower waveguide layer ≤ the change angle of In element concentration in the second optical field regulation layer ≤ the change angle of Al element concentration in the first optical field regulation layer.

3. The nitride semiconductor laser having a light field control layer according to claim 1, characterized by, The first lower waveguide layer, the second lower waveguide layer, the first optical field regulation layer and the second optical field regulation layer all have a refractive index coefficient characteristic, the change angle α of the peak position of the refractive index coefficient of the first lower waveguide layer to the lower limiting layer is: 0° ≤ α ≤ 45°, the change angle β of the peak position of the refractive index coefficient of the second lower waveguide layer to the lower limiting layer is: 10° ≤ β ≤ 45°, the change angle γ of the peak position of the refractive index coefficient of the first optical field regulation layer to the lower limiting layer is: 45° ≤ γ ≤ 90°, the change angle θ of the peak position of the refractive index coefficient of the second optical field regulation layer to the lower limiting layer is: 45° ≤ θ ≤ 90°, and α ≤ β ≤ 45° ≤ θ ≤ γ ≤ 90°.

4. The nitride semiconductor laser having a light field control layer according to claim 3, characterized by, The first lower waveguide layer, the second lower waveguide layer, the first optical field regulation layer and the second optical field regulation layer all have a peak rate electric field characteristic, the change angle ω of the valley position of the peak rate electric field of the first lower waveguide layer to the lower limiting layer is: 0° ≤ ω ≤ 45°, the change angle δ of the valley position of the peak rate electric field of the second lower waveguide layer to the lower limiting layer is: 10° ≤ δ ≤ 45°, the change angle ψ of the valley position of the peak rate electric field of the first optical field regulation layer to the lower limiting layer is: 45° ≤ ψ ≤ 90°, the change angle ε of the valley position of the peak rate electric field of the second optical field regulation layer to the lower limiting layer is: 45° ≤ ε ≤ 90°, and ω ≤ δ ≤ 45° ≤ ε ≤ ψ ≤ 90°.

5. The nitride semiconductor laser having a light field control layer according to claim 4, characterized by, The first lower waveguide layer, the second lower waveguide layer, the first light field regulation layer and the second light field regulation layer all have a radiation recombination coefficient characteristic, a peak position of the radiation recombination coefficient of the first lower waveguide layer to the lower limiting layer changes by an angle σ of: 0°≤σ≤45°, a peak position of the radiation recombination coefficient of the second lower waveguide layer to the lower limiting layer changes by an angle μ of: 10°≤μ≤45°, a peak position of the radiation recombination coefficient of the first light field regulation layer to the lower limiting layer changes by an angle is: a peak position of the radiation recombination coefficient of the second light field regulation layer to the lower limiting layer changes by an angle ρ of: 45°≤ρ≤90°, and 6. The nitride semiconductor laser having a light field control layer according to claim 5, wherein The first lower waveguide layer, the second lower waveguide layer, the first light field regulation layer and the second light field regulation layer all have optical absorption coefficient characteristics, the change angle τ of the valley position of the optical absorption coefficient of the first lower waveguide layer to the lower limiting layer is: 0°≤τ≤45°, the change angle υ of the valley position of the optical absorption coefficient of the second lower waveguide layer to the lower limiting layer is: 10°≤υ≤45°, the change angle χ of the valley position of the optical absorption coefficient of the first light field regulation layer to the lower limiting layer is: 45°≤χ≤90°, the change angle ζ of the valley position of the optical absorption coefficient of the second light field regulation layer to the lower limiting layer is: 45°≤ζ≤90°, and τ≤υ≤45°≤ζ≤χ≤90°.

7. The nitride semiconductor laser having a light field control layer according to claim 6, wherein The first light field regulation layer has a function y1=Cx1+D curve distribution, the second light field regulation layer has a fourth quadrant curve distribution of the function y2=A+B*x2 / lnx2, the first light field regulation layer has a function y3=Ex1+F curve distribution, and the second light field regulation layer has a fourth quadrant curve distribution of the function y4=G+H*x2 / lnx2, x1 is the depth of the first light field regulation layer to the first lower waveguide layer, and x2 is the depth of the second light field regulation layer to the second lower waveguide layer.

8. The nitride semiconductor laser having a light field control layer according to claim 7, characterized by, The first light field regulation layer and the second light field regulation layer also have static dielectric constant characteristics and high-frequency dielectric constant characteristics, the static dielectric constant of the first light field regulation layer has a function y5=Jx1+K curve distribution, the static dielectric constant of the second light field regulation layer has a fourth quadrant curve distribution of the function y6=L+M*x2 / lnx2, the high-frequency dielectric constant of the first light field regulation layer has a function y7=Nx1+P curve distribution, and the high-frequency dielectric constant of the second light field regulation layer has a fourth quadrant curve distribution of the function y8=Q+R*x2 / lnx2, wherein D≤F≤P≤K, A≤G≤Q≤L.

9. The nitride semiconductor laser having a light field control layer according to claim 1, characterized by, The first light field regulation layer and the second light field regulation layer are any one or any combination of InGaN, InN, AlInGaN, GaN, AlGaN, InGaN / GaN superlattice, InGaN / AlInN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, GaN / AlInGaN superlattice, GaN / AlInN superlattice, GaN / AlGaN superlattice, InGaN / InGaN superlattice, AlInGaN / AlInGaN superlattice or any combination with GaN.

10. The nitride semiconductor laser having a light field control layer according to claim 1, characterized by, The active layer is a periodic structure composed of well layers and barrier layers, the number of periods is 3 >= m >= 1, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, and the thickness is 10 angstrom meters to 150 angstrom meters; the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, and the thickness is 10 angstrom meters to 200 angstrom meters; The lower confinement layer, the lower waveguide layer, the upper waveguide layer, the electron blocking layer, and the upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond; The substrate is a single crystal substrate, which is any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, sapphire / SiN x , sapphire / SiO2 / SiN x composite substrate, sapphire / SiN x / SiO2 composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

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