Display panel, preparation method of display panel and display device

Abstract

The invention discloses a display panel, a preparation method of the display panel and a display device. The display panel comprises a substrate, a pixel anode layer arranged on one side of the substrate, a pixel definition layer on the side, away from the substrate, of the pixel anode layer, a pixel light-emitting layer on the side, away from the substrate, of the pixel definition layer and a pixel cathode layer on the side, away from the substrate, of the pixel light-emitting layer. The pixel light-emitting layer comprises a charge generation layer; the charge generation layers cover the pixel opening areas and extend from the pixel opening areas to two pixel definition areas adjacent to the pixel opening areas, and the charge generation layers of the adjacent pixel opening areas are disconnected; a bubble structure is arranged at the position, corresponding to the discontinuous area, in the pixel light-emitting layer, and the bubble structure is located between the side, away from the substrate, of the charge generation layer and the pixel cathode layer. The charge generation layer and the pixel cathode layer can be separated by using the bubble structure, so that the situation that a leakage path is formed in the display panel due to the fact that the pixel cathode layer is easily lapped with the charge generation layer is avoided.

Description

Technical Field

[0001] The present disclosure generally relates to the technical field of display devices, and in particular to a display panel, a method for preparing a display panel, and a display device. Background Art

[0002] With the continuous development of display technology, silicon-based organic light-emitting diodes (OLEDs) used as micro display panels can be made into OLED display devices with high pixel density and high refresh rate through silicon-based semiconductor preparation processes; for example, the OLED display devices can be used in the fields of virtual reality (VR) and augmented reality (AR).

[0003] Specifically, in order to avoid the pixel crosstalk problem of silicon-based OLED, the spacing of the charge generation layer (CGL) of different pixel areas can be achieved by filling the non-pixel area between adjacent pixel areas of the silicon-based OLED.

[0004] However, when the filling effect of the above-mentioned non-pixel area is not ideal, it is easy to cause the pixel cathode layer of the silicon-based OLED to be distorted and bent, which causes the pixel cathode layer to contact the charge generation layer distributed in the pixel area and form a leakage path (that is, cathode puncture phenomenon occurs), thereby increasing the power consumption of the display device. Summary of the invention

[0005] In view of the above-mentioned defects or deficiencies in the prior art, it is desired to provide a display panel, a method for preparing a display panel and a photolithography mask for a display device. The display panel provided in the present application can utilize a bubble structure arranged on the side of the charge generation layer away from the substrate to separate the charge generation layer and the pixel cathode layer, so that the pixel cathode layer is easily overlapped with the charge generation layer to form a leakage path inside the display panel.

[0006] According to a first aspect of the present application, a display panel is provided, comprising a substrate, a pixel anode layer arranged on one side of the substrate, a pixel definition layer on a side of the pixel anode layer away from the substrate, a pixel light emitting layer on a side of the pixel definition layer away from the substrate, and a pixel cathode layer on a side of the pixel light emitting layer away from the substrate; wherein the pixel definition layer comprises a plurality of pixel opening regions and a pixel definition region located between adjacent pixel opening regions; the pixel light emitting layer comprises a charge generation layer; the charge generation layer covers the pixel opening region and extends from the pixel opening region to two pixel definition regions adjacent to the pixel opening region, and the charge generation layers of adjacent pixel opening regions are disconnected; and a discontinuous region is arranged in each of the pixel definition regions; A bubble structure is arranged at a position in the pixel light emitting layer corresponding to the discontinuous region, and the bubble structure is located between a side of the charge generation layer away from the substrate and the pixel cathode layer.

[0007] In addition, the display panel of the present application may also have the following additional technical features: In a possible example, each of the pixel definition regions further includes inorganic regions located on both sides of the discontinuous region; The charge generation layer extends from the pixel opening region to the cavity structure of the inorganic region, and the cavity structure is communicated with the bubble structure.

[0008] In a possible example, the inorganic region includes a first sublayer, a second sublayer, and a third sublayer that are stacked, the orthographic projection pattern of the second sublayer is respectively included in the orthographic projection patterns of the first sublayer and the third sublayer, and the orthographic projection pattern of the third sublayer is included in the orthographic projection pattern of the first sublayer; The cavity structure is arranged on one circumferential side of the second sub-layer close to the discontinuous region.

[0009] In a possible example, the pixel anode layer includes a plurality of pattern regions and a flat region between adjacent pattern regions; The orthographic projection pattern of the discontinuous area is included in the orthographic projection pattern of the flat area, and the pixel opening area is arranged corresponding to the pattern area.

[0010] In a possible example, an end of the bubble structure close to the substrate is a pointed end, and an end of the bubble structure away from the substrate is a round end.

[0011] In a possible example, the radius of the bubble structure is 300A~600A.

[0012] According to a second aspect of the present application, a method for preparing a display panel is provided, the method comprising: Laying a metal material on one side of the substrate to form a pixel anode layer; Laying a whole layer of inorganic material on the side of the pixel anode layer away from the substrate, and removing the inorganic material in a preset area to form a pixel definition layer including a plurality of pixel opening areas and a pixel definition area located between adjacent pixel opening areas; wherein each of the pixel definition areas is provided with a discontinuous area; A pixel light-emitting material is prepared on a side of the pixel definition layer away from the substrate to form a pixel light-emitting layer; wherein the pixel light-emitting layer includes a charge generation layer; the charge generation layer covers the pixel opening area and extends from the pixel opening area to two pixel definition areas adjacent to the pixel opening area, and the charge generation layers of the adjacent pixel opening areas are disconnected; A bubble structure is provided at a position in the pixel light emitting layer corresponding to the discontinuous region, and the bubble structure is located between a side of the charge generation layer away from the substrate and the pixel cathode layer; A metal material is laid on a side of the pixel light emitting layer away from the substrate to form a pixel cathode layer.

[0013] In addition, the method for manufacturing the display panel of the present application may also have the following additional technical features: In a possible example, forming a pixel definition layer including a plurality of pixel opening regions and a pixel definition region located between adjacent pixel opening regions includes: Etching the inorganic material in the preset area to form the discontinuous area and inorganic areas located on both sides of the discontinuous area, each inorganic area containing a cavity structure; The content ratio of the inorganic material in the cavity structure is adjusted by using a preset gas, so as to pile up preset free radicals in the circumferential direction of the cavity structure.

[0014] In a possible example, the step of preparing a pixel light-emitting material on a side of the pixel definition layer away from the substrate to form a pixel light-emitting layer includes: A pixel light-emitting material is evaporated on a side of the pixel definition layer away from the substrate, and a bubble structure communicating with the cavity structure and the pixel light-emitting layer are formed based on the pixel light-emitting material and the preset polymer.

[0015] According to a third aspect of the present application, a display device is provided, comprising the display panel described in the first aspect.

[0016] Compared with the pixel cathode layer in the prior art that is prone to puncture, the display panel, the method for preparing the display panel and the display device provided in the embodiments of the present application can utilize a bubble structure arranged on the side of the charge generation layer away from the substrate to separate the charge generation layer and the pixel cathode layer, thereby avoiding the situation where the pixel cathode layer is easily overlapped with the charge generation layer and forms a leakage path inside the display panel (that is, avoiding the puncture phenomenon of the pixel cathode layer).

[0017] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Other features, objects and advantages of the present application will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings: Figure 1 A schematic cross-sectional view of a display panel 10 provided in an embodiment of the present application; Figure 2 One of the cross-sectional schematic diagrams of the display panel 20 provided in the embodiment of the present application; Figure 3 The second cross-sectional schematic diagram of the display panel 20 provided in the embodiment of the present application; Figure 4 A schematic diagram of a process for preparing a display panel 20 provided in an embodiment of the present application; Figure 5 One of the schematic diagrams of the process of preparing the display panel 20 provided in the embodiment of the present application; Figure 6 A second schematic diagram of a process for preparing a display panel 20 provided in an embodiment of the present application; Figure 7 The third schematic diagram of the process of preparing the display panel 20 provided in the embodiment of the present application; Figure 8 A fourth schematic diagram of a process for preparing a display panel 20 provided in an embodiment of the present application; Fig. 9 A fifth schematic diagram of a process for preparing a display panel 20 provided in an embodiment of the present application; Fig.10 A sixth schematic diagram of a process for preparing a display panel 20 provided in an embodiment of the present application; Fig.11 A schematic diagram of the structure of a computer device provided in an embodiment of the present application; In the above picture: 10-display panel; 101-substrate; 102-pixel anode layer; 103-pixel definition layer; 104-pixel light-emitting layer; 105-pixel cathode layer; 1031-pixel opening area; 1032-pixel definition area; 1041-charge generation layer; 10321-intermittent area; 10322-blank area; 20-display panel; 201-substrate; 202-pixel anode layer; 203-pixel definition layer; 204-pixel light-emitting layer; 205-pixel cathode layer; 2031-pixel opening area; 2032-pixel definition area; 20321-intermittent area; 20322-inorganic area; 2041-charge generation layer; 206-bubble structure; 2033-first sublayer; 2034-second sublayer; 2035-third sublayer; 2036-cavity structure; 2021-pattern area; 2022-flat area. DETAILED DESCRIPTION

[0019] The present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the relevant invention, rather than to limit the invention. It is also necessary to explain that, for ease of description, only the parts related to the invention are shown in the accompanying drawings.

[0020] It should be noted that, in the absence of conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments. In addition, the term "and / or" herein is merely a description of the association relationship of associated objects, indicating that three relationships may exist, for example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. The terms "first" and "second" in the description and claims of the embodiments of the present application are used to distinguish different objects, rather than to describe a specific order of objects.

[0021] With the continuous development of display technology, silicon-based organic light-emitting diodes (OLEDs) used as micro display panels can be made into OLED display devices with high pixel density and high refresh rate through silicon-based semiconductor preparation processes; for example, the OLED display devices can be used in the fields of virtual reality (VR) and augmented reality (AR).

[0022] Specifically, in order to avoid the pixel crosstalk problem of silicon-based OLEDs, the spacing of the charge generation layers of different pixel areas can be achieved by filling non-pixel areas between adjacent pixel areas of the silicon-based OLED.

[0023] For example, Figure 1 is one of the cross-sectional schematic diagrams of the existing display panel 10 provided in the embodiment of the present application, such as Figure 1 As shown, the display panel 10 includes a substrate 101, a pixel anode layer 102 arranged on one side of the substrate 101, a pixel definition layer 103 arranged on a side of the pixel anode layer 102 away from the substrate 101, a pixel light-emitting layer 104 arranged on a side of the pixel definition layer 103 away from the substrate 101, and a pixel cathode layer 105 arranged on a side of the pixel light-emitting layer 104 away from the substrate 101.

[0024] Exemplarily, the display panel 10 may be the above-mentioned substrate 101 may be a silicon-based OLED, and the substrate 101 may be a silicon wafer used to constitute a silicon-based OLED.

[0025] Exemplarily, the pixel definition layer 103 may be divided into a plurality of pixel opening regions 1031 and a pixel definition region 1032 between two adjacent pixel opening regions 1031 , wherein the pixel opening region 1031 may be a pixel light emitting region.

[0026] Specifically, a discontinuous region 10321 may be provided in the pixel definition region 1032 , so as to utilize the discontinuous region 10321 to discontinuously connect the charge generation layer 1041 in the pixel light emitting layer 104 , thereby avoiding the pixel crosstalk problem inside the display panel 10 .

[0027] In one embodiment, during the process of preparing the pixel light-emitting layer 104 , the pixel light-emitting material may be filled in the discontinuous region 10321 to discontinuity the charge generation layer 1041 .

[0028] However, when the filling effect of the above-mentioned discontinuous area 10321 (ie, the non-pixel area) is not ideal, the circumference of the discontinuous area 10321 is prone to produce the following Figure 1 The blank area 10322 shown, wherein the longitudinal distance and the lateral distance of the blank area 10322 are larger.

[0029] Based on this, the pixel cathode layer 105 is prone to the following Figure 1 As shown in the distorted bending situation, this causes the pixel cathode layer 105 to contact the charge generation layer 1041 distributed inside the pixel light-emitting layer 104 and form a leakage path (that is, a puncture phenomenon of the pixel cathode layer 105 occurs), thereby increasing the power consumption of the display panel 10.

[0030] In response to the above problems, the present application proposes a display panel that can utilize a bubble structure disposed on the side of the charge generation layer away from the substrate to separate the charge generation layer and the pixel cathode layer, thereby preventing the pixel cathode layer from overlapping the charge generation layer and forming a leakage path inside the display panel.

[0031] Figure 2is one of the cross-sectional schematic diagrams of the display panel 20 provided in the embodiment of the present application, such as Figure 2 As shown, the display panel 20 includes a substrate 201, a pixel anode layer 202 arranged on one side of the substrate 201, a pixel definition layer 203 on the side of the pixel anode layer 202 away from the substrate 201, a pixel light-emitting layer 204 on the side of the pixel definition layer 203 away from the substrate 201, and a pixel cathode layer 205 on the side of the pixel light-emitting layer 204 away from the substrate 201.

[0032] Exemplarily, the substrate 201 as the base material of the display panel 20 may have the characteristics of low expansion coefficient and high surface flatness, and its manufacturing material may be, for example, a silicon wafer; based on this, the display panel 20 may be a silicon-based display panel.

[0033] Exemplarily, the pixel anode layer 202 may have good transparency and conductivity, and may be prepared on one side of the substrate 201 by photolithography technology, for example.

[0034] Specifically, during the photolithography of the OLED display panel, the pixel anode layer 202 can be used to guide positive polarity charges (ie, holes) into the pixel light-emitting layer 204 to recombine with negative polarity charges (ie, electrons) in the pixel light-emitting layer 204, thereby stimulating the pixel light-emitting layer 204 to emit light.

[0035] Exemplarily, the pixel definition layer 203 (PDL) can be used to define the shape and size of each pixel in the display panel 20. Specifically, the pixel definition layer 203 can guide light onto the light-emitting material through a photolithography process to ensure that each pixel has a clear boundary and a correct shape.

[0036] For example, the manufacturing material of the pixel definition layer 203 can be an organic polymer material, such as polyimide (PI for short); or an inorganic material, such as silicon-containing compounds SiO or SiON.

[0037] Illustratively, the pixel definition layer 203 includes a plurality of pixel opening regions 2031 and a pixel definition region 2032 located between adjacent pixel opening regions 2031 .

[0038] Specifically, each pixel definition region 2032 may be provided with a discontinuous region 20321 and inorganic regions 20322 located on both sides of the discontinuous region 20321 .

[0039] For example, a pixel light-emitting material may be deposited by evaporation on a side of the pixel opening region 2031 away from the substrate 201 to prepare the pixel light-emitting layer 204. The pixel light-emitting material may be, for example, a red pixel light-emitting material, a green pixel light-emitting material, or a blue pixel light-emitting material, and the color and position of the pixel light-emitting material are not specifically limited herein.

[0040] Exemplarily, the pixel light emitting layer 204 includes a charge generation layer 2041 , which covers the pixel opening area 2031 and extends from the pixel opening area 2031 to two pixel definition areas 2032 adjacent to the pixel opening area 2031 , and the charge generation layers 2041 of adjacent pixel opening areas 2031 are disconnected.

[0041] Specifically, the charge generation layer 2041 can be disconnected at the contact position between the discontinuous region 20321 and the inorganic region 20322.

[0042] Based on this, the display panel 20 can utilize the charge generation layer 2041 to connect multiple light-emitting layers in series, and achieve the effect of light-emitting superposition while realizing color display through the method of "white" light + three-color filtering.

[0043] In a possible implementation, a bubble structure 206 is provided at a position corresponding to the discontinuous region 20321 in the pixel light emitting layer 204 , and the bubble structure 206 is located between a side of the charge generation layer 2041 away from the substrate 201 and the pixel cathode layer 205 .

[0044] In the embodiment of the present application, a bubble structure 206 can be set between the charge generation layer 2041 and the pixel cathode layer 205 to separate the distorted portion of the pixel cathode layer 205 when the pixel cathode layer 205 is distorted and bent, so as to avoid the situation where the pixel cathode layer 205 overlaps with the charge generation layer 2041 and forms a leakage path.

[0045] For example, one end of the bubble structure 206 may be disposed at a boundary between the discontinuous region 20321 and the inorganic region 20322 in the pixel definition region 2032 (ie, one end close to the substrate 201 ).

[0046] Specifically, the end of the bubble structure 206 close to the substrate 201 is a pointed end, and the end of the bubble structure 206 away from the substrate 201 is a round end. The radius of the bubble structure may be, for example, 300 Å to 600 Å. Compared with the pixel cathode layer in the prior art that is prone to puncture, the display panel 20 provided in the embodiment of the present application can utilize the bubble structure 206 arranged on the side of the charge generation layer 2041 away from the substrate 201 to separate the charge generation layer 2041 and the pixel cathode layer 205, thereby avoiding the pixel cathode layer 205 from easily overlapping with the charge generation layer 2041 and forming a leakage path inside the display panel 20 (that is, avoiding the puncture phenomenon of the pixel cathode layer 205).

[0047] In another embodiment of the present application, a specific structure of the pixel definition layer 203 is also provided. Exemplarily, the inorganic region 20322 of the pixel definition region 2032 may also include a cavity structure, and the cavity structure may communicate with the bubble structure 206; wherein the charge generation layer 2041 may extend from the pixel opening region 2031 to the cavity structure of the inorganic region 20322.

[0048] For example, Figure 3 is another schematic diagram of the display panel 20 provided in the embodiment of the present application. Figure 3 As shown, the inorganic region 20322 of the pixel definition region 2032 may include a first sublayer 2033, a second sublayer 2034, and a third sublayer 2035 which are stacked.

[0049] Specifically, the orthographic projection pattern of the second sub-layer 2034 is respectively included in the orthographic projection patterns of the first sub-layer 2033 and the third sub-layer 2035 , and the orthographic projection pattern of the third sub-layer 2035 is included in the orthographic projection pattern of the first sub-layer 2033 .

[0050] For example, the first sub-layer 2033 , the second sub-layer 2034 , and the third sub-layer 2035 may be made of silicon dioxide (SiO 2 ), silicon nitride (SiN), and SiO 2 , respectively.

[0051] For example, a cavity structure 2036 may be provided on one circumferential side of the second sub-layer 2034 close to the discontinuous region 20321 , wherein the cavity structure 2036 is communicated with the tip of the bubble structure 206 .

[0052] In another embodiment of the present application, a specific structure of the pixel anode layer 202 is also provided. For example, Figure 3 As shown, the pixel anode layer 202 may include a plurality of pattern regions 2021 and a flat region 2022 located between adjacent pattern regions 2021 .

[0053] Exemplarily, the orthographic projection pattern of the discontinuous area 20321 is included in the orthographic projection pattern of the flat area 2022 , and the pixel opening area 2031 is set corresponding to the pattern area 2021 .

[0054] Specifically, refer to Figure 3 Each pattern area 2021 can be set corresponding to a pixel opening area 2031 and a part of the pixel definition area 2032, and each flat area 2022 can be set corresponding to a part of the pixel definition area 2032 between adjacent pixel opening areas 2031.

[0055] Exemplarily, the extension length of the flat region 2022 away from the substrate 201 may be greater than the extension length of the flat region 2022 close to the substrate 201 , that is, the orthographic projection pattern of the flat region 2022 may be a trapezoid.

[0056] Specifically, the side of the flat region 2022 away from the substrate 201 may be concave, and based on this, the side of the discontinuous region 20321 corresponding to the flat region 2022 close to the substrate 201 may be convex.

[0057] In another embodiment of the present application, a method for preparing the display panel 20 is also provided. Figure 4 is a schematic diagram of a method for preparing a display panel 20 provided in an embodiment of the present application, such as Figure 4 As shown, the method comprises the following steps: Step 401 , laying a metal material on one side of the substrate 201 to form a pixel anode layer 202 .

[0058] In a possible implementation, the pixel anode layer 202 with the side away from the substrate 201 being flush may be prepared by using an LHC process.

[0059] For example, Figure 5 is one of the schematic diagrams of the process of preparing the display panel 20 provided in the embodiment of the present application, such as Figure 5 As shown, a metal material may be laid on one side of the substrate 201 , and a photoresist may be coated in a first preset area on the side of the metal material away from the substrate 201 , so as to form a pattern area 2021 of the pixel anode layer 202 by exposure and development.

[0060] Specifically, the metal material laid on one side of the substrate 201 may include titanium (Ti), titanium nitride (TiN), aluminum (Al), TiN or indium tin oxide (ITO); the first preset area may correspond to the flat area 2022 of the pixel anode layer 202 .

[0061] For example, Figure 6 FIG. 2 is a second schematic diagram of a process for preparing a display panel 20 provided in an embodiment of the present application. Figure 6As shown, an inorganic film layer can be coated on the pattern area 2021 and the blank area (i.e., the first preset area) between adjacent pattern areas 2021, and a photoresist that makes the film layer level can be coated on the side of the inorganic film layer away from the substrate 201, so as to use the LHC etching process to remove the photoresist and part of the inorganic material respectively, thereby forming a pixel anode layer 202 comprising multiple pattern areas 2021 and a flat area 2022 located between adjacent pattern areas 2021; wherein the surface of the pixel anode layer 202 away from the substrate 201 is level.

[0062] Specifically, the inorganic film layer used for coating may be SiO2, and the thickness may be 3000A~6000A.

[0063] In step 402 , a whole layer of inorganic material is laid on the side of the pixel anode layer 202 away from the substrate 201 , and the inorganic material in a preset area is removed to form a pixel definition layer 203 including a plurality of pixel opening areas 2031 and pixel definition areas 2032 located between adjacent pixel opening areas 2031 .

[0064] For example, Figure 7 FIG. 3 is a third schematic diagram of a process for preparing a display panel 20 provided in an embodiment of the present application. Figure 7 As shown, multiple layers of inorganic material can be laid on the side of the pixel anode layer 202 away from the substrate 201, and photoresist can be coated on the second preset area of ​​the laid inorganic material away from the substrate 201 to form three inorganic film layers on the side of the pixel anode layer 202 away from the substrate 201 through exposure and development; wherein the second preset area can be a pixel definition area 2032 of the pixel definition layer 203, and each pixel definition area 2032 is provided with an intermittent area 20321.

[0065] Specifically, a whole layer of SiO2 may be first laid on the side of the pixel anode layer 202 away from the substrate 201 , then a whole layer of SiN may be laid, and finally a whole layer of SiO2 may be laid again.

[0066] For example, Figure 8 FIG. 4 is a fourth schematic diagram of a process for preparing a display panel 20 provided in an embodiment of the present application. Figure 8 As shown, it can be Figure 7 The inorganic film layer shown is coated with a concave photoresist in a third preset area on one side away from the substrate 201, and a pixel definition layer 203 including a plurality of pixel opening areas 2031 and a pixel definition area 2032 located between adjacent pixel opening areas 2031 is formed through exposure and development; wherein the third preset area corresponds to the discontinuous area 20321, based on which, the discontinuous area 20321 is arranged in the pixel definition area 2032, and the two sides of each discontinuous area 20321 can be the inorganic areas 20322 in the pixel definition area 2032.

[0067] Specifically, the inorganic region 20322 may include a first sublayer 2033, a second sublayer 2034, and a third sublayer 2035 arranged in a stacked manner, wherein the first sublayer 2033, the second sublayer 2034, and the third sublayer 2035 correspond to Figure 7 The three inorganic film layers are shown; and a cavity structure 2036 may be provided on the circumferential side of the second sub-layer 2034 close to the discontinuous region 20321 .

[0068] Exemplarily, the inorganic film layer is subjected to the following steps: Figure 8 During the exposure and development shown, a predetermined gas is used to adjust the content ratio of the inorganic material in the cavity structure 2036 so as to deposit a predetermined polymer in the circumferential direction of the cavity structure 2036 .

[0069] Specifically, the carbon-nitrogen ratio of the inorganic material can be adjusted by using a preset gas, thereby forming a carbon-nitrogen polymer.

[0070] For example, Fig. 9 FIG. 5 is a fifth schematic diagram of a process for preparing a display panel 20 provided in an embodiment of the present application. Fig. 9 As shown, gases such as CHF3, CF4 or O2 can be added during the etching process to adjust the C / F ratio of the inorganic material around the cavity structure 2036, so as to accumulate CF-type polymers in the cavity structure 2036; specifically, the main components of the CF-type polymers can be elements such as carbon (C), oxygen (O), fluorine (F), silicon (Si), among which the O content can be 10~50%, and the C content can be 10~50%.

[0071] Step 403 , preparing a pixel light-emitting material on a side of the pixel definition layer 203 away from the substrate 201 to form a pixel light-emitting layer 204 .

[0072] For example, Fig.10 This is the sixth schematic diagram of the process of preparing the display panel 20 provided in the embodiment of the present application. Fig.10 As shown, a pixel light-emitting material may be prepared on a side of the pixel definition layer 203 away from the substrate 201 to form a pixel light-emitting layer 204 .

[0073] Specifically, refer to Fig.10 , pixel light-emitting materials can be evaporated on the side of the discontinuous area 20321, the pixel opening area 2031 and the pixel definition area 2032 away from the substrate 201 respectively.

[0074] For example, during the process of evaporating the pixel light-emitting material, a bubble structure 206 communicating with the cavity structure 2036 may be formed based on the pixel light-emitting material and a preset polymer.

[0075] Specifically, during the high-temperature evaporation of the above-mentioned pixel light-emitting material, the active lattice oxygen (O 2- ) can react with CF-based polymers to generate gases such as CO, CO2, COF2, etc., thereby forming a bubble structure 206; wherein the evaporation temperature can be 200°C~400°C.

[0076] Step 404 , laying a metal material on a side of the pixel light emitting layer 204 away from the substrate 201 to form a pixel cathode layer 205 .

[0077] Exemplary, reference Fig.10 , a metal material may be laid on a side of the pixel light emitting layer 204 away from the substrate 201 to form a pixel cathode layer 205 .

[0078] Compared with the pixel cathode layer in the prior art that is prone to puncture, on the one hand, the charge generation layer 2041 of the display panel 20, which is located on the side away from the substrate 201, can be used to separate the charge generation layer 2041 and the pixel cathode layer 205, thereby avoiding the pixel cathode layer 205 from overlapping with the charge generation layer 2041 and forming a leakage path inside the display panel 20 (i.e., avoiding the puncture phenomenon of the pixel cathode layer 205); on the other hand, a preset gas can be added during the preparation of the display panel 20 to accumulate a preset polymer in the cavity structure 2036 in the display panel 20, thereby forming a bubble structure 206 for separating the charge generation layer 2041 and the pixel cathode layer 205 based on the preset polymer, thereby effectively solving the puncture phenomenon of the pixel cathode layer 205 and reducing the design cost of the spacing structure between the charge generation layer 2041 and the pixel cathode layer 205.

[0079] In another embodiment of the present application, a display device 30 is further provided. The display device 30 may include the display panel 20 in the above embodiment.

[0080] In a possible implementation, the display device 30 may be used to output image information. For example, the display device 30 may display text images by controlling a semiconductor light emitting diode; for example, the display device 30 may be a silicon-based micro display device.

[0081] In another embodiment of the present application, a computer device 600 is also provided, which includes a central processing unit (CPU) 601, which can perform various appropriate actions and processes according to a program stored in a read-only memory (ROM) 602 or a program loaded from a storage part 608 to a random access memory (RAM) 603. In the random access memory (RAM) 603, various programs and data required for the operation instructions of the system are also stored. The central processing unit (CPU) 601, the read-only memory (ROM) 602, and the random access memory (RAM) 603 are connected to each other through a bus 604. An input / output (I / O) interface 605 is also connected to the bus 604.

[0082] The following components are connected to the input / output (I / O) interface 605: an input section 606 including a keyboard, a mouse, etc.; an output section 607 including a cathode ray tube (CRT), a liquid crystal display (LCD), etc., and a speaker, etc.; a storage section 608 including a hard disk, etc.; and a communication section 609 including a network interface card such as a LAN card, a modem, etc. The communication section 609 performs communication processing via a network such as the Internet. A drive 610 is also connected to the input / output (I / O) interface 605 as needed. A removable medium 611, such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, etc., is installed on the drive 610 as needed so that a computer program read therefrom is installed into the storage section 608 as needed.

[0083] In particular, according to an embodiment of the present application, the above reference flow chart Figure 5 The described process can be implemented as a computer software program. For example, an embodiment of the present application includes a computer program product, which includes a computer program carried on a computer-readable medium, and the computer program includes a program code for executing the method shown in the flowchart. In such an embodiment, the computer program includes a program code for executing the method shown in the flowchart. In such an embodiment, the computer program can be downloaded and installed from a network through the communication part 609, and / or installed from a removable medium 611. When the computer program is executed by the central processing unit (CPU) 601, the above-mentioned functions defined in the system of the present application are executed.

[0084] It should be noted that the computer-readable medium shown in the present application may be a computer-readable signal medium or a computer-readable storage medium or any combination of the above two. The computer-readable storage medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, device or device, or any combination of the above. More specific examples of computer-readable storage media may include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In the present application, a computer-readable storage medium may be any tangible medium containing or storing a program that can be used by or in combination with an instruction execution system, device or device. In the present application, a computer-readable signal medium may include a data signal propagated in a baseband or as part of a carrier wave, which carries a computer-readable program code. This propagated data signal may take a variety of forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination of the above. Computer-readable signal media may also be any computer-readable medium that matches a computer-readable storage medium, which may send, propagate or transmit a program for use by or in conjunction with an instruction execution system, device or device. The program code contained on the computer-readable medium may be transmitted using any appropriate medium, including but not limited to: wireless, wire, optical cable, RF, etc., or any suitable combination of the above.

[0085] The flow chart and block diagram in the accompanying drawings illustrate the possible architecture, functions and operating instructions of the system, method and computer program product according to various embodiments of the present application. In this regard, each box in the flow chart or block diagram can represent a module, a program segment or a part of a code, and the aforementioned module, program segment or a part of a code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some implementations as replacements, the functions marked in the box can also occur in a sequence different from that marked in the accompanying drawings. For example, the boxes represented by two connections can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flow chart, and the combination of the boxes in the block diagram and / or flow chart can be implemented with a dedicated hardware-based system that performs a specified function or operating instruction, or can be implemented with a combination of dedicated hardware and computer instructions.

[0086] The units or modules involved in the embodiments described in the present application may be implemented by software or by hardware. The described units or modules may also be provided in a processor, for example, may be described as: a processor including a semantic extraction unit, a weight allocation unit, and a determination unit. The names of these units or modules do not, in some cases, constitute limitations on the units or modules themselves.

[0087] As another aspect, the present application further provides a computer-readable storage medium, which may be included in the computer device described in the above embodiment, or may exist independently without being installed in the computer device. The above computer-readable storage medium stores one or more programs, and when the above programs are used by one or more processors to execute the method described in the present application. For example, it can be executed Figure 4 The individual steps of the method are shown.

[0088] The present application embodiment provides a computer program product, which includes instructions. When the instructions are executed, the method described in the present application embodiment is executed. For example, Figure 4 The individual steps of the method are shown.

[0089] The above description is only a preferred embodiment of the present application and an explanation of the technical principles used. Those skilled in the art should understand that the scope of disclosure involved in the present application is not limited to the technical solution formed by a specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the aforementioned disclosed concept. For example, the above features are replaced with the technical features with similar functions disclosed in the present application (but not limited to) by each other to form a technical solution.

Claims

1. A display panel, characterized in that: The invention comprises a substrate, a pixel anode layer arranged on one side of the substrate, a pixel definition layer on the side of the pixel anode layer away from the substrate, a pixel light emitting layer on the side of the pixel definition layer away from the substrate, and a pixel cathode layer on the side of the pixel light emitting layer away from the substrate; wherein the pixel definition layer comprises a plurality of pixel opening regions and a pixel definition region located between adjacent pixel opening regions; the pixel light emitting layer comprises a charge generation layer; the charge generation layer covers the pixel opening region and extends from the pixel opening region to two pixel definition regions adjacent to the pixel opening region, and the charge generation layers of adjacent pixel opening regions are disconnected; and a discontinuous region is arranged in each of the pixel definition regions; A bubble structure is arranged at a position in the pixel light emitting layer corresponding to the discontinuous region, and the bubble structure is located between a side of the charge generation layer away from the substrate and the pixel cathode layer.

2. The display panel according to claim 1, characterized in that: Each of the pixel definition regions further includes inorganic regions located on both sides of the discontinuous region; The charge generation layer extends from the pixel opening region to the cavity structure of the inorganic region, and the cavity structure is communicated with the bubble structure.

3. The display panel according to claim 2, characterized in that: The inorganic region includes a first sublayer, a second sublayer, and a third sublayer arranged in a stacked manner, the orthographic projection pattern of the second sublayer is respectively included in the orthographic projection patterns of the first sublayer and the third sublayer, and the orthographic projection pattern of the third sublayer is included in the orthographic projection pattern of the first sublayer; The cavity structure is arranged on one circumferential side of the second sub-layer close to the discontinuous region.

4. The display panel according to claim 1, characterized in that: The pixel anode layer includes a plurality of pattern areas and a flat area between adjacent pattern areas; The orthographic projection pattern of the discontinuous area is included in the orthographic projection pattern of the flat area, and the pixel opening area is arranged corresponding to the pattern area.

5. The display panel according to claim 1, characterized in that: An end of the bubble structure close to the substrate is a pointed end, and an end of the bubble structure away from the substrate is a round end.

6. The display panel according to any one of claims 1 to 5, characterized in that: The radius of the bubble structure is 300A~600A.

7. A method for preparing a display panel, characterized in that: The method comprises: Laying a metal material on one side of the substrate to form a pixel anode layer; Laying a whole layer of inorganic material on the side of the pixel anode layer away from the substrate, and removing the inorganic material in a preset area to form a pixel definition layer including a plurality of pixel opening areas and a pixel definition area located between adjacent pixel opening areas; wherein each of the pixel definition areas is provided with a discontinuous area; A pixel light-emitting material is prepared on a side of the pixel definition layer away from the substrate to form a pixel light-emitting layer; wherein the pixel light-emitting layer includes a charge generation layer; the charge generation layer covers the pixel opening area and extends from the pixel opening area to two pixel definition areas adjacent to the pixel opening area, and the charge generation layers of the adjacent pixel opening areas are disconnected; A bubble structure is provided at a position in the pixel light emitting layer corresponding to the discontinuous region, and the bubble structure is located between a side of the charge generation layer away from the substrate and the pixel cathode layer; A metal material is laid on a side of the pixel light emitting layer away from the substrate to form a pixel cathode layer.

8. The method for preparing a display panel according to claim 7, characterized in that: The method of forming a pixel definition layer including a plurality of pixel opening regions and a pixel definition region located between adjacent pixel opening regions comprises: Etching the inorganic material in the preset area to form the discontinuous area and inorganic areas located on both sides of the discontinuous area, each inorganic area containing a cavity structure; The content ratio of the inorganic material in the cavity structure is adjusted by using a preset gas, so as to accumulate a preset polymer in the circumferential direction of the cavity structure.

9. The method for preparing a display panel according to claim 8, characterized in that: The step of preparing a pixel light-emitting material on a side of the pixel definition layer away from the substrate to form a pixel light-emitting layer comprises: A pixel light-emitting material is evaporated on a side of the pixel definition layer away from the substrate, and a bubble structure communicating with the cavity structure and the pixel light-emitting layer are formed based on the pixel light-emitting material and the preset polymer.

10. A display device, characterized in that: The display device comprises the display panel according to any one of claims 1 to 6.

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