Adjustable edge coupler

Abstract

The invention discloses an adjustable edge coupler, belongs to the technical field of edge couplers, and can solve the problem that the coupling performance of the edge coupler is severely influenced due to the fact that an optical waveguide and a fiber core of an optical fiber of an existing edge coupler are difficult to align accurately. The edge coupler comprises a substrate, the upper surface of which is provided with a strip-shaped groove; one end of the strip-shaped groove penetrates through the substrate; the buried oxide layer is arranged on the substrate, and a first through groove and a second through groove which are communicated with the strip-shaped groove are formed in the positions, corresponding to the strip-shaped groove, of the buried oxide layer; the part, between the first through groove and the second through groove, of the buried oxide layer forms a cantilever beam; the optical waveguide is arranged on the cantilever beam, one end of the optical waveguide is conical, and the tip of the cone is located at the free end of the cantilever beam; and the adjusting module is arranged on the buried oxide layer and is used for adjusting the position of the optical waveguide. The invention is used for coupling between the optical fiber and the chip.

Description

Technical Field

[0001] The invention relates to an adjustable edge coupler, belonging to the technical field of edge couplers. Background Art

[0002] Silicon photonic chips realize the integration of multiple optical functions on a single chip. At present, when coupling optical fiber with silicon photonic chips, since the mode field diameter of the core of standard single-mode optical fiber is about ten microns, while the mode field diameter of the optical waveguide of silicon photonic chips is usually hundreds of nanometers, there is a huge difference in the mode field sizes of the two. As a result, when the light emitted from the core of the optical fiber directly enters the optical waveguide of the silicon photonic chip, or when the light emitted from the optical waveguide directly enters the core of the fiber, considerable light transmission loss will be generated, that is, high coupling loss, which is not conducive to the efficient transmission of optical signals.

[0003] Edge couplers are commonly used photonic devices to deal with this problem. The optical waveguide inside them can expand the mode field diameter of the optical waveguide of the silicon photonic chip to a mode field diameter close to that of the fiber core, thereby reducing the optical transmission loss when the optical fiber is coupled to the silicon photonic chip. However, the optical waveguide of the edge coupler must be precisely aligned with the core of the optical fiber to effectively reduce the optical transmission loss. In practice, due to factors such as manufacturing errors and packaging errors, it is often difficult to accurately align the optical waveguide of the edge coupler and the core of the optical fiber, which seriously affects the coupling performance of the edge coupler. Summary of the invention

[0004] The invention provides an adjustable edge coupler, which can solve the problem that the optical waveguide and the fiber core of the optical fiber of the existing edge coupler are difficult to align accurately, thus seriously affecting the coupling performance of the edge coupler.

[0005] The present invention provides an adjustable edge coupler, the edge coupler comprising: A substrate, the upper surface of which is provided with a strip groove; one end of the strip groove passes through the substrate; a buried oxide layer, arranged on the substrate, and having a first through groove and a second through groove connected to the strip groove at a position corresponding to the strip groove; a portion of the buried oxide layer located between the first through groove and the second through groove forms a cantilever beam; an optical waveguide, arranged on the cantilever beam, one end of which is tapered, and the tip of the tapered waveguide is located on the free end of the cantilever beam; The adjustment module is arranged on the buried oxide layer and is used for adjusting the position of the optical waveguide.

[0006] Optionally, parts of the buried oxide layer located on both sides of the cantilever beam form two opposite side beams; and the adjustment module comprises: A vertical adjustment unit, arranged on two side beams, for generating a gradient electric field to drive the optical waveguide to move vertically; The horizontal adjustment unit is arranged on the two side beams and is used to generate a horizontal capacitive electrostatic field to drive the optical waveguide to move horizontally.

[0007] Optionally, the optical waveguide includes a first waveguide section close to the tip and a second waveguide section away from the tip; and the vertical adjustment unit includes: Two first electrodes are respectively arranged at positions of the two side beams corresponding to the first waveguide section; The first driving component is connected to the two first electrodes and is used to generate a gradient electric field between the two first electrodes to drive the first waveguide segment to move vertically.

[0008] Optionally, the level adjustment unit includes: Second electrodes are respectively arranged at positions corresponding to the two side beams and the second waveguide segment; The second driving component is connected to the two second electrodes and is used to generate a horizontal capacitive electrostatic field between the second electrodes and the second waveguide section to drive the second waveguide section to move horizontally.

[0009] Optionally, the optical waveguide further comprises: The two side wings are respectively connected to the sides of the second waveguide section and correspond one to one to the two second electrodes; the second driving component drives the corresponding side wings to move horizontally by generating a horizontal capacitive electrostatic field between the second electrode and the corresponding side wings, thereby driving the second waveguide section to move horizontally.

[0010] Optionally, the second waveguide segment includes a first subsegment close to the first waveguide segment and a second subsegment away from the first waveguide segment; The two second electrodes are respectively arranged at positions of the two side beams corresponding to the first sub-segment; the surface of the second sub-segment is coated with an oxide coating; the regulating module further includes: The strengthening and adjusting unit is arranged on the two side beams and the oxide cladding, and is used to generate a vertical capacitive electrostatic field to drive the second sub-segment to move vertically.

[0011] Optionally, the enhanced adjustment unit includes: three third electrodes, one of which is arranged on the upper surface of the oxide cladding, and the other two are arranged at positions of the two side beams corresponding to the second sub-segment; The third driving component is connected to the three third electrodes and is used to generate a vertical capacitive electrostatic field between the three third electrodes to drive the second sub-segment to move vertically.

[0012] Optionally, the material of the wing is silicon; and the second electrode comprises: A silicon chip is disposed on the corresponding side beam and opposite to the corresponding side wing; A doped silicon wafer is disposed on the corresponding side beam and connected to an end of the silicon wafer away from the corresponding side wing; The metal sheet is arranged on the corresponding side beam and connected to an end of the doped silicon sheet away from the silicon sheet.

[0013] Optionally, the length of the cantilever beam is smaller than the length of the strip groove, and one end of the strip groove passing through the substrate has a limiting groove section; The limiting groove section is used to place the optical fiber and limit the relative position of the optical fiber and the optical waveguide.

[0014] Optionally, the cross-section of the limiting groove segment is rectangular or V-shaped.

[0015] The beneficial effects that the present invention can produce include: The present invention can drive the optical waveguide and the cantilever beam to move slightly according to the position of the optical fiber core by setting an adjustment module, thereby achieving fine adjustment of the position of the optical waveguide so that the tip of the optical waveguide is accurately aligned with the core of the optical fiber, thereby reducing the coupling loss between the optical fiber and the optical waveguide and improving the coupling performance of the edge coupler. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A schematic diagram of the structure of an adjustable edge coupler provided by an embodiment of the present invention; Figure 2 A schematic diagram of the structure of the adjustment module provided in an embodiment of the present invention; Figure 3 A schematic diagram of the structure of a strip groove provided in an embodiment of the present invention; Figure 4 A schematic structural diagram of a substrate provided in an embodiment of the present invention.

[0017] Reference numerals: 1. Substrate; 2. Buried oxide layer; 3. Side beam; 4. Cantilever beam; 5. Optical waveguide; 6. First electrode; 7. Silicon wafer; 8. Doped silicon wafer; 9. Metal sheet; 10. Oxide cladding; 11. Third electrode; 12. Strip groove; 13. Optical fiber; 14. Fiber core; 15. Side wing; 16. Integrated optical path interface. DETAILED DESCRIPTION

[0018] The present invention is described in detail below in conjunction with embodiments, but the present invention is not limited to these embodiments.

[0019] The embodiment of the present invention provides an adjustable edge coupler, such as Figures 1 to 4 As shown, the edge coupler comprises: The substrate 1 has a strip-shaped groove 12 on its upper surface; one end of the strip-shaped groove 12 passes through the substrate 1; The buried oxide layer 2 is arranged on the substrate 1, and a first through groove and a second through groove connected to the strip groove 12 are formed at a position corresponding to the strip groove 12; a portion of the buried oxide layer 2 between the first through groove and the second through groove forms a cantilever beam 4; The optical waveguide 5 is arranged on the cantilever beam 4, one end of which is tapered, and the tip of the tapered waveguide is located on the free end of the cantilever beam 4; The adjustment module is arranged on the buried oxide layer 2 and is used for adjusting the position of the optical waveguide 5 .

[0020] Specifically, the tip of the optical waveguide 5 is coupled to the core 14 of the optical fiber 13, and the other end away from the tip is provided with an integrated optical path interface 16. The optical waveguide 5 is connected to the optical waveguide of the silicon photonic chip through the integrated optical path interface 16, thereby forming an optical path between the core 14 of the optical fiber 13 and the optical waveguide of the silicon photonic chip.

[0021] Specifically, a section of the optical waveguide 5 close to the silicon photonic chip is in a strip shape, and a section close to the optical fiber 13 is in a cone shape. For example, the width of the strip is 500 nm, and the width of the tip of the cone is about 100 nm. The tip of the cone can expand the mode field diameter of the optical waveguide 5 to a mode field diameter close to that of the fiber core 14, thereby significantly improving the degree of overlap between the mode field profile of the fiber core 14 and the mode field profile of the optical waveguide 5. The higher the degree of overlap of the mode field profile, the smaller the coupling loss between the fiber core 14 and the optical waveguide 5. At the same time, the degree of overlap of the mode field profile greatly depends on the degree of spatial alignment between the fiber core 14 and the tip of the optical waveguide 5. The higher the degree of alignment between the fiber core 14 and the tip of the optical waveguide 5, the higher the degree of overlap of the mode field profile.

[0022] Existing edge couplers usually use physical methods to limit the position of the optical fiber 13 so that the fiber core 14 is aligned with the tip of the optical waveguide 5. However, in practice, due to factors such as manufacturing errors and packaging errors, it is often difficult to align the tip of the optical waveguide 5 of the edge coupler with the fiber core 14, resulting in a low degree of overlap of the mode field profiles of the two, resulting in a large coupling loss between the fiber core 14 and the optical waveguide 5, which seriously affects the coupling performance of the edge coupler.

[0023] Therefore, the present invention can drive the optical waveguide 5 and the cantilever beam 4 to move slightly according to the position of the fiber core 14 by setting an adjustment module, so as to achieve fine adjustment of the position of the optical waveguide 5, so that the tip of the optical waveguide 5 is accurately aligned with the fiber core 14, thereby increasing the overlap of the mode field profiles of the two, reducing the coupling loss between the fiber core 14 and the optical waveguide 5, and improving the coupling performance of the edge coupler.

[0024] Specifically, in this embodiment, by opening the strip groove 12 on the substrate 1, a larger light transmission space can be reserved in the substrate 1, thereby avoiding light transmission loss caused by part of the light field leaking into the substrate 1 when light is transmitted between the fiber core 14 and the optical waveguide 5.

[0025] Specifically, the substrate 1 of the present embodiment is a silicon substrate, and the buried oxide layer 2 of the present embodiment is a silicon dioxide layer, which is formed on the upper surface of the silicon substrate. By way of example, the present embodiment uses an SOI wafer with a silicon substrate thickness of 220 nm and a silicon dioxide layer thickness of 3 μm, and first etches a first through groove and a second through groove on the silicon dioxide layer of the SOI wafer, and then etches a strip groove 12 on the silicon substrate through the first through groove and the second through groove.

[0026] Specifically, the parts of the buried oxide layer 2 located on both sides of the cantilever beam 4 form two opposite side beams 3; the adjustment module may include: A vertical adjustment unit, arranged on the two side beams 3, for generating a gradient electric field to drive the optical waveguide 5 to move vertically; The horizontal adjustment unit is arranged on the two side beams 3 and is used to generate a horizontal capacitive electrostatic field to drive the optical waveguide 5 to move horizontally.

[0027] Specifically, the gradient electric field can generate a vertical gradient electric field force on the optical waveguide 5 to drive the optical waveguide 5 to move vertically; the horizontal capacitive electrostatic field can generate a horizontal electrostatic actuating force on the optical waveguide 5 to drive the optical waveguide 5 to move horizontally.

[0028] Since the optical waveguide 5 is fixedly connected to the cantilever beam 4, and the cantilever beam 4 has a certain degree of freedom, the present embodiment utilizes the vertical adjustment unit and the horizontal adjustment unit to apply vertical and horizontal forces to the optical waveguide 5, thereby driving the optical waveguide 5 to move, thereby adjusting the spatial positions of the optical waveguide 5 and the cantilever beam 4, so that the tip of the optical waveguide 5 is aligned with the fiber core 14.

[0029] Specifically, the optical waveguide 5 includes a first waveguide segment close to the tip and a second waveguide segment away from the tip; in this embodiment, the first waveguide segment is the tapered segment of the optical waveguide 5 , and the second waveguide segment is the strip segment of the optical waveguide 5 .

[0030] Specifically, the vertical adjustment unit may include: Two first electrodes 6 are respectively arranged at positions corresponding to the two side beams 3 and the first waveguide section; The first driving component is connected to the two first electrodes 6 and is used to generate a gradient electric field between the two first electrodes 6 to drive the first waveguide segment to move vertically.

[0031] In this embodiment, the optical waveguide 5 is grounded, and a gradient electric field can be generated between the two first electrodes 6 by applying a bias voltage between the two first electrodes 6, thereby applying a vertical gradient electric field force to the first waveguide segment to drive the first waveguide segment to move vertically.

[0032] Specifically, the level adjustment unit may include: Two second electrodes are respectively arranged at positions corresponding to the two side beams 3 and the second waveguide section; The second driving component is connected to the two second electrodes and is used to generate a horizontal capacitive electrostatic field between the second electrodes and the second waveguide segment to drive the second waveguide segment to move horizontally.

[0033] In this embodiment, the optical waveguide 5 is grounded, and the second driving component can generate a horizontal capacitive electrostatic field between the second waveguide segment and any second electrode by applying a voltage between the second waveguide segment and any second electrode. The horizontal capacitive electrostatic field can apply a horizontal electrostatic actuation force to the second waveguide segment, thereby driving the second waveguide segment to move horizontally. It can be seen that the optical waveguide 5 acts as a moving electrode in the horizontal capacitive electrostatic field.

[0034] Since the optical waveguide 5 acts as a moving electrode and is grounded, the direction of the voltage applied by the second driving component between any second electrode and the second waveguide segment is certain, which makes the electrostatic actuation force generated by any second electrode on the second waveguide segment a horizontal attraction, resulting in that a single second electrode can only adjust the second waveguide segment in one direction. Therefore, in order to achieve bidirectional adjustment in the horizontal direction, two second electrodes are respectively arranged on the two side beams 3 in this embodiment. The second driving component can form horizontal capacitive electrostatic fields in opposite directions between the two second electrodes and the second waveguide segment, thereby applying horizontal attraction forces in opposite directions to the second waveguide segment, so as to achieve arbitrary adjustment of the horizontal position of the second waveguide segment. In practice, the two second electrodes do not work at the same time, and the second driving component starts the operation of a single electrode according to the position of the fiber core 14.

[0035] Specifically, the optical waveguide 5 may further include: The two side wings 15 are respectively connected to the sides of the second waveguide section and correspond one to one to the two second electrodes; the second driving component generates a horizontal capacitive electrostatic field between any second electrode and the corresponding side wing to drive the corresponding side wing to move horizontally, thereby driving the second waveguide section to move horizontally.

[0036] In this embodiment, the second waveguide section extends to both sides to form two side wings 15. The materials of the two side wings 15 and the optical waveguide 5 are both silicon. In practice, the second waveguide section and the two side wings 15 can be etched on the silicon layer on the buried oxide layer 2. Since the two side wings 15 are closer to the two second electrodes than the second waveguide section, the second driving component is used to generate a horizontal capacitive electrostatic field between any second electrode and the corresponding side wing, so that it is easier to drive the second waveguide section to move horizontally.

[0037] Specifically, the thickness of the side of the wing 15 close to the corresponding second electrode is thicker than the thickness of the side close to the second waveguide segment, which is beneficial to enhancing the strength of the horizontal capacitive electrostatic field, thereby increasing the horizontal attraction to the second waveguide segment.

[0038] Specifically, the second electrode may include: The silicon chip 7 is arranged on the corresponding side beam 3 and opposite to the corresponding side wing 15; The doped silicon wafer 8 is disposed on the corresponding side beam 3 and connected to an end of the silicon wafer 7 away from the corresponding side wing 15; The metal sheet 9 is disposed on the corresponding side beam 3 and connected to an end of the doped silicon sheet 8 away from the silicon sheet 7 .

[0039] By providing the doped silicon wafer 8, the resistivity between the metal wafer 9 and the silicon wafer 7 can be changed, thereby optimizing the electrical transmission between the metal wafer 9 and the silicon wafer 7 and reducing the loss during the transmission process. In addition, the metal wafer 9 and the silicon wafer 7 are not in direct contact, but are electrically contacted through low-resistance doped silicon, which can improve the response speed of electrical transmission.

[0040] Specifically, the resistivity of the doped silicon wafer 8 is different due to the different doping levels and types, so the resistivity between the metal wafer 9 and the silicon wafer 7 can be adjusted by using doped silicon wafers 8 with different doping levels and types.

[0041] Furthermore, the second waveguide segment includes a first subsegment close to the first waveguide segment and a second subsegment away from the first waveguide segment; the second electrode is arranged at a position corresponding to the first subsegment on any side beam 3, and the two side wings 15 are respectively connected to the side of the first subsegment; the surface of the second subsegment is coated with an oxide cladding 10. The adjustment module may also include: The strengthening adjustment unit is arranged on the two side beams 3 and the oxide cladding 10, and is used to generate a vertical capacitive electrostatic field to drive the second sub-segment to move vertically.

[0042] By providing a strengthening adjustment module, the optical waveguide 5 can be further fine-tuned to calibrate the spatial position of its tip.

[0043] Specifically, the strengthening adjustment unit may include: Three third electrodes 11, one of which is arranged on the upper surface of the oxide cladding 10, and the other two are arranged at positions of the two side beams 3 corresponding to the second sub-segment; The third driving component is connected to the three third electrodes 11 and is used to generate a vertical capacitive electrostatic field between the three third electrodes 11 to drive the second sub-segment to move vertically.

[0044] Since the third electrode 11 is a metal electrode, and direct contact between the metal electrode and the optical waveguide 5 will interfere with the performance of the optical waveguide 5, in this embodiment, an oxide cladding 10 is provided on the surface of the second sub-segment of the optical waveguide 5, and a third electrode 11 is provided on the oxide cladding 10, so that the optical waveguide 5 and the third electrode 11 can be effectively isolated.

[0045] In this embodiment, the optical waveguide 5 is grounded, and the third electrode 11 located on the oxide insulating layer is set as the first electrode, and the other two third electrodes 11 are the second electrode and the third electrode. When a voltage is applied only between the first electrode and the second electrode, a capacitive electrostatic field in a first direction can be generated between the first electrode and the second electrode; similarly, when a voltage is applied only between the first electrode and the third electrode, a capacitive electrostatic field in a second direction can be generated between the first electrode and the third electrode. Then, when a voltage is applied between the first electrode and the second electrode, and between the first electrode and the third electrode at the same time, the capacitive electrostatic field in the first direction and the capacitive electrostatic field in the second direction can be superimposed into an equivalent vertical capacitive electrostatic field, and the vertical capacitive electrostatic field can apply a vertical electrostatic actuation force to the second sub-segment of the optical waveguide 5. At the same time, by changing the direction of the voltage, the direction of the electrostatic actuation force can be changed, so this embodiment can achieve arbitrary adjustment of the vertical position of the second sub-segment.

[0046] Specifically, the materials of the first electrode 6 , the third electrode 11 and the metal sheet 9 of the second electrode may be gold, copper, aluminum or the like.

[0047] In this embodiment, the connection between the metal electrodes, and the connection between the metal electrodes and other circuits or power sources include but are not limited to connection methods such as through-hole metal interconnection and flying wire connection.

[0048] Specifically, the first driving component, the second driving component and the third driving component may adopt a micro-electro-mechanical system (MEMS for short).

[0049] Specifically, the length of the cantilever beam 4 is smaller than the length of the strip groove 12, and one end of the strip groove 12 passing through the substrate 1 has a limiting groove section; The limiting groove section is used to place the optical fiber 13 and limit the relative position between the optical fiber 13 and the optical waveguide 5 .

[0050] Specifically, the cross section of the limiting groove section may be rectangular or V-shaped.

[0051] In practice, when etching the first through groove and the second through groove on the silicon dioxide layer of the SOI wafer, the present embodiment can simultaneously etch the area on the silicon dioxide layer corresponding to the limiting groove segment to remove the material in the area and form a recessed area; then, the present embodiment etches a strip groove 12 with a limiting groove segment on the silicon substrate through the first through groove, the second through groove and the recessed area.

[0052] By setting the limiting groove section, the core 14 of the optical fiber 13 can be initially aligned with the tip of the optical waveguide 5, and then the spatial position of the optical waveguide 5 is adjusted by the adjustment module to achieve precise alignment of the core 14 of the optical fiber 13 with the tip of the optical waveguide 5.

[0053] After the final position of the optical waveguide 5 is adjusted, in this embodiment, a limiting member may be used to limit or fix the optical waveguide 5 to prevent it from shifting.

[0054] It is worth noting that, although the precise limiting groove design can ensure that the fiber core 14 and the tip of the optical waveguide 5 are initially aligned, thereby reducing coupling losses, the adjustable edge coupler based on the micro-electromechanical system proposed in this embodiment can ensure the precise alignment of the fiber core 14 and the optical waveguide 5, thereby further reducing coupling losses. Therefore, for this scenario, this embodiment is still applicable.

[0055] Meanwhile, although the size difference between the mode field size of the fiber core 14 and the mode field size of the optical waveguide 5 can be reduced by using an optical fiber 13 with a lower mode field diameter, thereby reducing the coupling loss between the two to a certain extent, there is still coupling loss caused by the inability to accurately align the tip of the fiber core 14 with the tip of the optical waveguide 5. Therefore, for this scenario, this implementation is still applicable.

[0056] In addition, the adjustable edge coupler based on micro-electromechanical system proposed in this embodiment can also be applied to other integrated photonic platforms and other coupling converter structures, such as trident-shaped couplers or three-dimensional transition coupler structures.

[0057] The above are only a few embodiments of the present application and do not constitute any form of limitation to the present application. Although the present application is disclosed as above with preferred embodiments, it is not intended to limit the present application. Any technician familiar with the profession, without departing from the scope of the technical solution of the present application, using the technical content disclosed above to make slight changes or modifications are equivalent to equivalent implementation cases and fall within the scope of the technical solution.

Claims

1. An adjustable edge coupler, characterized in that: The edge coupler comprises: A substrate, the upper surface of which is provided with a strip groove; one end of the strip groove passes through the substrate; a buried oxide layer, arranged on the substrate, and having a first through groove and a second through groove connected to the strip groove at a position corresponding to the strip groove; a portion of the buried oxide layer located between the first through groove and the second through groove forms a cantilever beam; an optical waveguide, arranged on the cantilever beam, one end of which is tapered, and the tip of the tapered waveguide is located on the free end of the cantilever beam; The adjustment module is arranged on the buried oxide layer and is used for adjusting the position of the optical waveguide.

2. The edge coupler according to claim 1, characterized in that: The buried oxide layer is located on both sides of the cantilever beam to form two opposite side beams; the adjustment module includes: A vertical adjustment unit, arranged on two side beams, for generating a gradient electric field to drive the optical waveguide to move vertically; The horizontal adjustment unit is arranged on the two side beams and is used to generate a horizontal capacitive electrostatic field to drive the optical waveguide to move horizontally.

3. The edge coupler according to claim 2, characterized in that: The optical waveguide comprises a first waveguide section close to the tip and a second waveguide section away from the tip; the vertical adjustment unit comprises: Two first electrodes are respectively arranged at positions of the two side beams corresponding to the first waveguide section; The first driving component is connected to the two first electrodes and is used to generate a gradient electric field between the two first electrodes to drive the first waveguide segment to move vertically.

4. The edge coupler according to claim 3, characterized in that: The level adjustment unit comprises: Two second electrodes are respectively arranged at positions corresponding to the two side beams and the second waveguide segment; The second driving component is connected to the two second electrodes and is used to generate a horizontal capacitive electrostatic field between the second electrodes and the second waveguide section to drive the second waveguide section to move horizontally.

5. The edge coupler according to claim 4, characterized in that: The optical waveguide further comprises: The two side wings are respectively connected to the sides of the second waveguide section and correspond one to one to the two second electrodes; the second driving component drives the corresponding side wings to move horizontally by generating a horizontal capacitive electrostatic field between the second electrode and the corresponding side wings, thereby driving the second waveguide section to move horizontally.

6. The edge coupler according to claim 4, characterized in that: The second waveguide segment includes a first subsegment close to the first waveguide segment and a second subsegment far from the first waveguide segment; The two second electrodes are respectively arranged at positions of the two side beams corresponding to the first sub-segment; the surface of the second sub-segment is coated with an oxide coating; the regulating module further includes: The strengthening and adjusting unit is arranged on the two side beams and the oxide cladding, and is used to generate a vertical capacitive electrostatic field to drive the second sub-segment to move vertically.

7. The edge coupler according to claim 6, characterized in that: The enhanced adjustment unit comprises: three third electrodes, one of which is arranged on the upper surface of the oxide cladding, and the other two are arranged at positions of the two side beams corresponding to the second sub-segment; The third driving component is connected to the three third electrodes and is used to generate a vertical capacitive electrostatic field between the three third electrodes to drive the second sub-segment to move vertically.

8. The edge coupler according to claim 5, characterized in that: The material of the wing is silicon; the second electrode comprises: A silicon chip is disposed on the corresponding side beam and opposite to the corresponding side wing; A doped silicon wafer is disposed on the corresponding side beam and connected to an end of the silicon wafer away from the corresponding side wing; The metal sheet is arranged on the corresponding side beam and connected to an end of the doped silicon sheet away from the silicon sheet.

9. The edge coupler according to claim 1, characterized in that: The length of the cantilever beam is smaller than the length of the strip groove, and one end of the strip groove passing through the substrate has a limiting groove section; The limiting groove section is used to place the optical fiber and limit the relative position of the optical fiber and the optical waveguide.

10. The edge coupler according to claim 9, characterized in that The cross section of the limiting groove section is rectangular or V-shaped.

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