Non-fullerene acceptor materials based on thiophene derivative π bridge, preparation method and application thereof
By introducing thiophene derivative π-bridges into non-fullerene acceptor materials, the photoelectric conversion efficiency of existing thiophene π-bridge materials is enhanced through improved DA interaction and intermolecular stacking, thus achieving high-efficiency photoelectric conversion.
Patent Information
- Application Number
- CN202411636440.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-15
- Publication Date
- 2025-10-21
- Estimated Expiration
- 2044-11-15
AI Technical Summary
The photoelectric conversion efficiency of existing thiophene π-bridged polymeric non-fullerene acceptor materials still lags behind that of small molecule acceptor materials. How to introduce a better π-bridge to improve photoelectric conversion efficiency is a technical problem that urgently needs to be solved.
Non-fullerene acceptor materials based on thiophene derivative π-bridges were used to enhance the DA interaction and improve the degree of conjugation by introducing thiophene derivative π-bridges. Intermolecular stacking was enhanced by intramolecular S…O and H…O non-covalent interactions. The materials were prepared by tinning and Stille coupling reactions.
The device achieved an improvement in photoelectric conversion efficiency, with device performance exceeding 18%, open-circuit voltage exceeding 0.92 volts, short-circuit current exceeding 25 mA/cm2, and fill factor exceeding 78%, demonstrating excellent film-forming properties and charge transport performance.