Test system and test method of memory

Abstract

The invention provides a memory test system and method, and the system comprises a test temperature box which is used for regulating and controlling the environment temperature; the processing module is used for acquiring environment temperatures and sending different read-write instructions and corresponding test data to the memory at different environment temperatures; the power consumption module is used for monitoring power consumption data of the memory; the power consumption module is also used for transmitting the power consumption data to the processing module; wherein the memory executes a read-write operation according to a read-write instruction, and transmits a master control temperature of a master control unit of the memory and a flash memory temperature of a flash memory unit to the processing module; and the processing module is also used for calculating a read-write performance value according to the test data when the memory executes the read-write operation. According to the test system and the test method for the memory, the correlation of the performance, the power consumption and the temperature of the memory in various application scenes can be rapidly tested.

Description

Technical Field

[0001] The present invention relates to the field of storage, and in particular to a storage testing system and a storage testing method. Background Art

[0002] eMMC (embedded Multimedia Card) is a storage solution integrated into the device, widely used in smartphones, tablets, laptops and other embedded devices. eMMC integrates a controller and flash memory, and has the characteristics of small size, simple structure and easy integration, making it the preferred storage solution for various embedded devices. As users' requirements for device performance and user experience continue to increase, the performance (Performance), power consumption (PowerConsumption) and temperature (Temperature) of eMMC storage products have become important indicators to measure their advantages and disadvantages.

[0003] In actual applications, the performance, power consumption and temperature of eMMC memory produced by different manufacturers in various application scenarios are not consistent. How to comprehensively and accurately evaluate the correlation between the performance, power consumption and temperature of eMMC memory in various application scenarios has become an important challenge faced by major storage manufacturers. How to quickly test the correlation between the performance, power consumption and temperature of memory in various application scenarios is a problem that needs to be solved urgently. Summary of the invention

[0004] The object of the present invention is to provide a memory testing system and a testing method, which can quickly test the performance, power consumption, and temperature correlation of the memory in various application scenarios.

[0005] In order to solve the above technical problems, the present invention is achieved through the following technical solutions: The present invention provides a memory testing system, comprising: Test thermostat, used to control ambient temperature; A test board is located in the test incubator, and a memory is electrically connected to the test board; A processing module is located on the test board and electrically connected to the test temperature box to obtain the ambient temperature; the processing module is also used to send different read and write instructions and corresponding test data to the memory at different ambient temperatures; a power supply module, located on the test board, for supplying power to the processing module and the memory; and A power consumption module, located on the test board and electrically connected between the power supply module and the memory, for monitoring the power consumption data of the memory; the power consumption module is also used to transmit the power consumption data to the processing module; Wherein, the memory performs a read and write operation according to the read and write instruction, and transmits the main control temperature of the main control unit of the memory and the flash memory temperature of the flash memory unit to the processing module; The processing module is also used to calculate the read-write performance value according to the test data of the memory when performing the read-write operation.

[0006] In one embodiment of the present invention, the memory includes: a main control monitoring unit, used to monitor the main control temperature of the main control unit of the memory when performing read and write operations; and The flash memory monitoring unit is used to monitor the flash memory temperature of the flash memory unit of the memory when performing read and write operations.

[0007] In one embodiment of the present invention, when the ambient temperature rises, the processing module determines whether the increase in the main control temperature is greater than a first preset value; when the increase in the main control temperature is greater than the first preset value, the memory is optimized; otherwise, no optimization is required.

[0008] In one embodiment of the present invention, when the ambient temperature rises, the processing module determines whether the increase in the flash memory temperature is greater than a second preset value; when the increase in the flash memory temperature is greater than the second preset value, the memory is optimized; otherwise, no optimization is required.

[0009] In one embodiment of the present invention, when the ambient temperature changes, the processing module determines whether the power consumption data of the main control unit at a higher ambient temperature is greater than the power consumption data at a lower ambient temperature; when the power consumption data of the main control unit at a higher ambient temperature is greater than the power consumption data at a lower ambient temperature, the memory is optimized; otherwise, no optimization is required.

[0010] In one embodiment of the present invention, when the ambient temperature changes, the processing module determines whether the power consumption data of the flash memory unit at a higher ambient temperature is greater than the power consumption data at a lower ambient temperature; when the power consumption data of the flash memory unit at a higher ambient temperature is greater than the power consumption data at a lower ambient temperature, the memory is optimized; otherwise, no optimization is required.

[0011] In one embodiment of the present invention, the test data includes first data and second data; When the processing module sends a write instruction, the memory writes the first data in a sequential write manner and writes the second data in a random write manner; When the processing module sends a read instruction, the memory reads out the first data in a sequential read manner and reads out the second data in a random read manner.

[0012] In one embodiment of the present invention, when the ambient temperature increases, the processing module determines whether a sequential write performance value of the memory decreases when executing a sequential write operation; when the sequential write performance value decreases, the memory is optimized; otherwise, no optimization is required; When the ambient temperature increases, the processing module determines whether a sequential read performance value of the memory decreases when executing a sequential read operation; when the sequential read performance value decreases, the memory is optimized; otherwise, no optimization is required.

[0013] In one embodiment of the present invention, when the ambient temperature increases, the processing module determines whether a random write performance value of the memory decreases when performing a random write operation; when the random write performance value decreases, the memory is optimized; otherwise, no optimization is required; When the ambient temperature increases, the processing module determines whether a random read performance value of the memory decreases when performing a random read operation; when the random read performance value decreases, the memory is optimized; otherwise, no optimization is required.

[0014] The present invention also provides a memory testing method, comprising: Regulating the ambient temperature of the storage device; sending different read and write instructions and corresponding test data to the memory at different ambient temperatures; Acquiring power consumption data when the memory performs read and write operations according to read and write instructions; Acquire a main control temperature of a main control unit and a flash memory temperature of a flash memory unit when the memory performs a read / write operation according to a read / write instruction; The read / write performance value is calculated based on the test data when the memory performs the read / write operation according to the read / write instruction.

[0015] As described above, the present invention provides a memory test system and test method, which can accurately quantify and analyze the differences in performance, power consumption, and temperature of the memory, especially in complex application scenarios, to evaluate the stability and risks of different memories in actual use. The running behavior of the firmware and hardware inside the memory can be fully monitored, and the performance, power consumption, and temperature can be obtained in real time. This monitoring is not limited to a single dimension, but can simultaneously analyze the correlation of multiple dimensions (such as performance, power consumption, and temperature), thereby providing a more comprehensive system health status analysis. At the same time, it is possible to quickly and accurately locate the correlation between performance, power consumption, and temperature at the same time point, and perform linkage analysis simultaneously. This synchronous analysis can better reveal the true performance of the test system under different operating conditions and help optimize the overall performance of the memory.

[0016] Of course, any product implementing the present invention does not necessarily need to achieve all of the advantages described above at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for describing the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0018] Figure 1 A schematic diagram of a memory testing system according to an embodiment of the present invention; Figure 2 is a schematic diagram of a memory in one embodiment of the present invention; Figure 3 It is a schematic diagram of the temperature and performance of a memory at an ambient temperature of 25° C. in one embodiment of the present invention; Figure 4 It is a schematic diagram of the temperature and performance of a memory at an ambient temperature of 85° C. in one embodiment of the present invention; Figure 5 It is a schematic diagram of power consumption of a memory at an ambient temperature of 25° C. according to an embodiment of the present invention; Figure 6 FIG. 1 is a schematic diagram of power consumption of a memory at an ambient temperature of 85° C. according to an embodiment of the present invention.

[0019] In the figure: 100, processing module; 200, memory module; 300, storage module; 400, power module; 500, first interface; 600, second interface; 700, power consumption module; 800, memory; 900, monitoring module; 810, main control unit; 820, transmission interface unit; 830, read-only storage unit; 840, random access storage unit; 850, read cache unit; 860, write cache unit; 870, flash memory unit; 880, main control monitoring unit; 890, flash memory monitoring unit. DETAILED DESCRIPTION

[0020] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0021] See also Figure 1The present invention discloses a memory test system, which can be used to test the memory 800 to comprehensively test the performance, power consumption and temperature of different memories 800 in different application scenarios. The test system may include a test board, a test incubator, a processing module 100, a memory module 200, a storage module 300, a power module 400, a first interface 500, a second interface 600, a power consumption module 700 and a monitoring module 900.

[0022] See also Figure 1 In one embodiment, the test board may be an integrated circuit board (PCB). The processing module 100, the memory module 200, the storage module 300, the power module 400, the first interface 500, the second interface 600, the power consumption module 700, the memory 800, and the monitoring module 900 may be electrically connected to the test board.

[0023] In one embodiment, the test board can be placed in a test incubator. The test incubator can adjust the ambient temperature of the location of the test board to complete the test of the memory 800. Specifically, the test incubator can be configured to adjust the ambient temperature of the test according to preset conditions to obtain different ambient temperature ranges. For example, the processing module 100 can be electrically connected to the test incubator, and the test incubator can be controlled by the processing module 100 to adjust the ambient temperature of the test. For another example, the test incubator can be equipped with a controller to adjust the ambient temperature of the test by adjusting different gears on the test incubator.

[0024] In one embodiment, when the ambient temperature in the test incubator needs to be adjusted, the adjustable temperature range of the test incubator can be pre-acquired through the processing module 100. The processing module 100 can divide the adjustable temperature range according to preset conditions, and the preset condition can be that each interval of other fixed temperatures is a gear. For example, the adjustable temperature range can be -40°C~125°C, and the preset condition can be that each interval of 10°C is a gear, and the adjustable temperature range is divided into 17 consecutive gears. For example, the first gear can be expressed as an ambient temperature range of -40°C. The second gear can be expressed as an ambient temperature range of -30°C. By analogy, the 16th gear can be expressed as an ambient temperature range of 120°C. The 17th gear can be expressed as an ambient temperature range of 125°C. Of course, in other embodiments, the ambient temperature inside the test incubator can also be adjusted directly through the test incubator, and different gears can also be directly preset on the test incubator.

[0025] In one embodiment, the processing module 100 may be a central processing unit. The central processing unit (CPU) may be responsible for interpreting and executing instructions in a program, controlling and processing data. The processing module 100 may be a multi-core processor, and each core may process different data read and write requests in parallel, thereby increasing the parallelism of tasks and improving the overall test efficiency. In this embodiment, the processing module 100 may test multiple memories 800 simultaneously to improve the test efficiency. Each core of the processing module 100 may correspond to a memory 800.

[0026] In one embodiment, the memory module 200 may be a dynamic random access memory (DRAM). The memory module 200 may be used to store data and program codes so that the processing module 100 can quickly access them.

[0027] In one embodiment, the storage module 300 may be a memory card (Secure Digital, SD). The SD card may be used to store an operating system and software programs required for operation.

[0028] In one embodiment, the power module 400 (POWER) can supply power to the processing module 100 , the memory module 200 , the storage module 300 , the memory 800 , etc., so as to drive the test system to work smoothly.

[0029] In one embodiment, the first interface 500 may be a Universal Asynchronous Receiver / Transmitter (UART). The processing module 100 may communicate with the peripheral device via the first interface 500 to exchange data, for example, the test log may be uploaded via the first interface 500.

[0030] In one embodiment, the second interface 600 may be a Universal Serial Bus (USB). The second interface 600 may be used to connect various peripheral devices (such as a keyboard, a mouse, a printer, a mobile hard disk, etc.). The processing module 100 may communicate data and provide power with the peripheral devices through the second interface 600. The processing module 100 may download corresponding test files, test data, etc. through the second interface 600, and may also upload the test results to the host in a package through the second interface 600.

[0031] In one embodiment, the power consumption module (Power Monitor) 700 can be electrically connected between the power supply module 400 and the memory 800. The memory 800 is configured with a VCC pin and a VCCQ pin to provide power to different circuit parts respectively. Among them, the VCC pin can provide an operating voltage for the flash memory unit 870 in the memory 800 and provide power for storage operations, including data storage, erasure and reading. The VCCQ pin can provide voltage for the main control unit 810 and other control circuits in the memory 800 to ensure stable transmission of data between the memory 800 and the processing module 100. The power consumption module 700 can be electrically connected to the VCC pin and the VCCQ pin respectively to monitor the power consumption data of the memory 800 when performing different operations, and transmit the power consumption data to the processing module 100.

[0032] In one embodiment, the monitoring module 900 may be electrically connected to the processing module 100. The monitoring module 900 may be used to monitor the ambient temperature and send the ambient temperature to the processing module 100. The monitoring module 900 may be a temperature sensor.

[0033] See also Figure 2 In one embodiment, the memory 800 may be an embedded MultiMediaCard (eMMC). The memory 800 may communicate with the processing module 100 through the CMD line and the DATA0~7 lines, and perform operations such as reading, writing, and erasing by receiving instructions from the processing module 100. The processing module 100 may send instructions through the CMD line and transmit data through the DATA0~7 lines. The communication protocol between the memory 800 and the processing module 100 may follow the JEDEC protocol. The memory 800 may include a main control unit 810, a transmission interface unit 820, a read-only storage unit 830, a random storage unit 840, a read cache unit 850, a write cache unit 860, a flash memory unit 870, a main control monitoring unit 880, and a flash memory monitoring unit 890.

[0034] In one embodiment, the main control unit 810 may be a microcontroller unit (MCU). The main control unit 810 may be used to perform specific control tasks, such as reading data, processing instructions from the processing module 100, etc. The processing core of the main control unit 810 may be designed based on the RISC-V architecture to perform various control and computing tasks.

[0035] In one embodiment, the transmission interface unit 820 may be a transmission interface between the main control unit 810 and the processing module 100. The transmission interface unit 820 may receive instructions from the processing module 100, and return data or status information to the processing module 100. The transmission interface unit 820 may receive instructions from the processing module 100 through the CMD line and the DATA line, and return result data or execution status to the processing module 100 through the DATA line.

[0036] In one embodiment, the read-only storage unit 830 may be a non-volatile memory (ROM) for long-term data storage. A program may be stored in the read-only storage unit 830. The program may be a set of pre-written instructions that instruct the main control unit 810 on how to start and run. These instructions include device initialization, peripheral configuration, and a possible boot loader. The boot loader may be used to load an updated program or operating system, etc.

[0037] In one embodiment, the random access memory unit 840 may be a volatile memory (Random Access Memory, RAM) for temporarily storing data and program codes. The random access memory unit 840 may be used to temporarily store data. When the main control unit 810 executes a program, the program code may be loaded from the read-only storage unit 830 into the random access memory unit 840 for execution.

[0038] In one embodiment, the cache unit can be used as a high-speed temporary storage area between the main control unit 810 and the flash memory unit 870 to store data and instructions frequently accessed by the main control unit 810 to achieve the function of accelerating data transmission. The cache unit can include a read cache unit (Read Buffer) 850 and a write cache unit (Write Buffer) 860.

[0039] In one embodiment, the read cache unit 850 may be an area of ​​the memory 800 used to temporarily store data read from the flash memory unit 870. When the processing module 100 requests data, the memory 800 may not always directly obtain the data from the flash memory unit 870, but may first read the data from the read cache unit 850, thereby speeding up data access.

[0040] In one embodiment, the write cache unit 860 may be an area of ​​the memory 800 used to temporarily store data to be written into the flash memory unit 870. The write request data sent by the processing module 100 is first written into the write cache unit 860, and the main control unit 810 then writes the data in the write cache unit 860 into the flash memory unit 870 according to actual conditions.

[0041] In one embodiment, the flash memory unit (Nand) 870 may be a physical unit for storing data in the memory 800. The flash memory unit 870 may be composed of a plurality of storage blocks. Each storage block may contain a plurality of pages. Each page is the minimum unit of a read / write operation, and a block is the minimum unit of an erase operation. Data is read and written in units of pages, and the entire block needs to be erased when erasing.

[0042] In one embodiment, the controller monitoring unit (Controller Sensor) 880 may be electrically connected to the main control unit 810. The controller monitoring unit 880 may monitor the controller temperature of the main control unit 810 in real time when the main control unit 810 performs read and write operations, and transmit the controller temperature to the main control unit 810. The main control unit 810 may transmit the controller temperature to the processing module 100.

[0043] In one embodiment, the flash memory monitoring unit (Nand Sensor) 890 may be electrically connected to the flash memory unit 870. The flash memory monitoring unit 890 may monitor the flash memory temperature of the flash memory unit 870 in real time when performing read and write operations, and transmit the flash memory temperature to the main control unit 810. The main control unit 810 may transmit the flash memory temperature to the processing module 100.

[0044] In one embodiment, when the processing module 100 tests the memory 800, the processing module 100 may first adjust the ambient temperature to control it at a specific temperature, such as 20°C, 30°C, 40°C, etc. Subsequently, the processing module 100 may send different read and write instructions and corresponding test data to the memory 800.

[0045] In one embodiment, the processing module 100 may first send a write instruction and corresponding test data to the memory 800 to detect the temperature, power consumption, speed and other information of the memory 800 when performing a write operation. The write operation can be divided into sequential write (SW) and random write (RW). Sequential write refers to writing the test data to the flash memory unit 870 in a continuous logical address order, that is, the test data is written to the continuous logical position of the flash memory unit 870, rather than a random logical position. Random write refers to writing the test data to a random logical address of the flash memory unit 870.

[0046] In one embodiment, in order to be able to test the sequential write performance value and the random write performance value of the detection memory 800 simultaneously during one test process, at this time, the test data can be divided into first data and second data. The data volume of the test data can be unlimited, for example, it can be 4GB, 8GB, 16GB, 32GB, 64GB, 128GB, 256GB, etc. The ratio of the data volume of the first data to the data volume of the second data can be unlimited, for example, it can be 1:1, 2:1, 3:1, 1:2, 1:3, etc. When the processing module 100 sends a write instruction, the memory 800 can write the first data in a sequential write manner and write the second data in a random write manner.

[0047] In one embodiment, when the memory 800 writes the first data in a sequential write manner, the master control monitoring unit 880 can monitor the master control temperature of the master control unit 810 in real time, and the flash memory monitoring unit 890 can monitor the flash memory temperature of the flash memory unit 870 in real time. After the memory 800 completely writes the first data into the flash memory unit 870 in a sequential write manner, the write duration can be calculated based on the timestamp of the memory 800 when writing the first data and the timestamp when the first data is completely written into the flash memory unit 870.

[0048] Furthermore, the main control unit 810 may calculate the sequential write performance value according to the ratio of the data amount of the first data to the write duration.

[0049] Furthermore, the master control monitoring unit 880 may start recording the real-time master control temperature of the master control unit 810 at the start of the sequential write operation, and collect the real-time master control temperature at a fixed time interval until the sequential write operation is completed. Subsequently, all collected real-time master control temperatures may be summed and then divided by the total number of real-time master control temperatures to obtain the average master control temperature of the master control unit 810 during the sequential write operation, which is recorded as the master control temperature.

[0050] Furthermore, the flash memory monitoring unit 890 may start recording the real-time master temperature of the flash memory unit 870 at the start of the sequential write operation, and collect the real-time master temperature at a fixed time interval until the sequential write operation is completed. Subsequently, all collected real-time flash memory temperatures may be summed and then divided by the total number of real-time flash memory temperatures to obtain the average flash memory temperature of the flash memory unit 870 during the sequential write operation, which is recorded as the flash memory temperature.

[0051] Furthermore, the power consumption module 700 can monitor the voltages of the VCC pin and the VCCQ pin of the memory 800. The power consumption module 700 can calculate the power consumption data of the main control unit 810 and the power consumption data of the flash memory unit 870 by writing the duration and the voltages of the VCC pin and the VCCQ pin.

[0052] In one embodiment, under the above-mentioned ambient temperature conditions, when the memory 800 writes the first data in a sequential write mode, the corresponding sequential write performance value, the main control temperature, the flash memory temperature, the power consumption data of the main control unit 810, and the power consumption data of the flash memory unit 870 can be obtained. Subsequently, the memory 800 also needs to write the second data in a random write mode to obtain the corresponding random write performance value, the main control temperature, the flash memory temperature, the power consumption data of the main control unit 810, and the power consumption data of the flash memory unit 870. The process of writing the first data in a sequential write mode is similar to the process of writing the second data in a random write mode, which will not be described in detail here.

[0053] In one embodiment, under the above-mentioned ambient temperature conditions, after the memory 800 writes the test data into the flash memory unit 870, the processing module 100 may send a read instruction to the memory 800, so that the memory 800 can read out the first data in a sequential read (SR) manner and read out the second data in a random read (RR) manner. Sequential read refers to reading data from the flash memory unit 870 in a continuous logical address order. Random read refers to reading data from the flash memory unit 870 at a random logical address.

[0054] In one embodiment, when the memory 800 reads out the first data in a sequential read manner, the master control monitoring unit 880 can monitor the master control temperature of the master control unit 810 in real time, and the flash memory monitoring unit 890 can monitor the flash memory temperature of the flash memory unit 870 in real time. After the memory 800 completely reads out the first data from the flash memory unit 870 in a sequential read manner, the read duration can be calculated based on the timestamp when the memory 800 reads out the first data and the timestamp when the first data is completely written and read out from the flash memory unit 870.

[0055] Furthermore, the main control unit 810 may calculate the sequential read performance value according to the ratio of the data volume of the first data to the read time length.

[0056] Furthermore, the main control monitoring unit 880 may start recording the real-time main control temperature of the main control unit 810 when the sequential read operation starts, and collect the real-time main control temperature at a fixed time interval until the sequential read operation ends. Subsequently, all collected real-time main control temperatures may be summed and then divided by the total number of real-time main control temperatures to obtain the average main control temperature of the main control unit 810 during the sequential read operation, which is recorded as the main control temperature.

[0057] Furthermore, the flash memory monitoring unit 890 may start recording the real-time master temperature of the flash memory unit 870 at the start of the sequential read operation, and collect the real-time master temperature at a fixed time interval until the sequential read operation ends. Subsequently, all collected real-time flash memory temperatures may be summed and then divided by the total number of real-time flash memory temperatures to obtain an average flash memory temperature of the flash memory unit 870 during the sequential read operation, which is recorded as the flash memory temperature.

[0058] Furthermore, the power consumption module 700 can monitor the voltages of the VCC pin and the VCCQ pin of the memory 800. The power consumption module 700 can calculate the power consumption data of the main control unit 810 and the power consumption data of the flash memory unit 870 by reading the duration and the voltages of the VCC pin and the VCCQ pin.

[0059] In one embodiment, under the above-mentioned ambient temperature conditions, when the memory 800 reads out the first data in a sequential read manner, the corresponding sequential read performance value, the main control temperature, the flash memory temperature, the power consumption data of the main control unit 810, and the power consumption data of the flash memory unit 870 can be obtained. Subsequently, the memory 800 also needs to read out the second data in a random read manner to obtain the corresponding random read performance value, the main control temperature, the flash memory temperature, the power consumption data of the main control unit 810, and the power consumption data of the flash memory unit 870. The process of reading out the first data in a sequential read manner is similar to the process of reading out the second data in a random read manner, and will not be repeated here.

[0060] In one embodiment, the memory 800 has different speed modes, such as DDR52 (Double Data Rate 52 MHz), HS200 (High Speed ​​200 MHz), HS400 (High Speed ​​400 MHz) and other modes. The DDR52 mode refers to working at a 52MHz clock frequency, transmitting data twice (rising edge and falling edge) in each clock cycle, which can achieve a higher transmission rate. The HS200 mode refers to using a single data rate transmission (that is, data is only transmitted once per clock cycle, on the rising edge), but the operating frequency is increased to 200MHz, which significantly improves the data transmission rate. The HS400 mode refers to working at a frequency of 200MHz, transmitting data twice (rising edge and falling edge) in each clock cycle.

[0061] In one embodiment, during the above test process, various performance values ​​of the memory 800 may also be tested in different speed modes to obtain different performance values ​​of the memory 800. For example, in the DDR52 mode, the power consumption data of the main control unit 810 and the power consumption data of the flash memory unit 870 when the memory 800 performs read and write operations are obtained. For another example, in the DDR52 mode, the sequential write performance value, random write performance value, sequential read performance value, random read performance value, main control temperature, flash memory temperature and other information of the memory 800 when performing read and write operations are obtained.

[0062] In one embodiment, under the above-mentioned ambient temperature conditions, the processing module 100 can obtain information about the memory 800 when performing different read and write operations: the memory 800 writes the sequential write performance value of the first data, the main control temperature, the flash memory temperature, the power consumption data of the main control unit 810, and the power consumption data of the flash memory unit 870 and other information in a sequential write manner; the memory 800 writes the random write performance value of the second data, the main control temperature, the flash memory temperature, the power consumption data of the main control unit 810, and the power consumption data of the flash memory unit 870 and other information in a random write manner; the memory 800 reads out the sequential read performance value of the first data, the main control temperature, the flash memory temperature, the power consumption data of the main control unit 810, and the power consumption data of the flash memory unit 870 and other information in a sequential read manner; the memory 800 reads out the random read performance value of the second data, the main control temperature, the flash memory temperature, the power consumption data of the main control unit 810, and the power consumption data of the flash memory unit 870 and other information in a random read manner.

[0063] In one embodiment, the above test process is only performed under one ambient temperature. In order to comprehensively test the memory 800, it is necessary to perform tests under different ambient temperature conditions. For example, the same test needs to be performed under ambient temperatures such as 0°C, 20°C, 85°C, 90°C, and 100°C, and obtain information such as the sequential write performance value, random write performance value, sequential read performance value, random read performance value, master control temperature, and flash memory temperature of the memory 800 when performing read and write operations.

[0064] In one implementation, by comparing information such as sequential write performance values, random write performance values, sequential read performance values, random read performance values, main control temperature, flash memory temperature, etc. when the memory 800 performs read and write operations at different ambient temperatures, it can be determined whether the memory 800 needs to be optimized.

[0065] See also Figure 3 and Figure 4In one embodiment, when the ambient temperature rises, the processing module 100 needs to determine whether the increase in the main control temperature is greater than the first preset value. When the increase in the main control temperature is greater than the first preset value, the memory 800 needs to be optimized; otherwise, no optimization is required. For example, when the ambient temperature rises from 25°C to 85°C, it is indicated that the ambient temperature has increased by 60°C. The first preset value can be expressed as 60°C. Subsequently, the increase in the main control temperature can be calculated, and the main control temperature rises from 73°C to 148°C, and its increase is 75°C. At this time, the increase in the main control temperature is greater than the first preset value, which means that the temperature management of the main control unit 810 needs to be optimized. When optimizing the temperature management of the main control unit 810, optimization can be performed in the direction of inspecting peripheral modules, shutting down non-essential modules, and reducing the frequency of the main control unit 810.

[0066] Furthermore, patrolling peripheral modules refers to regularly checking and shutting down modules that are not running necessarily to reduce power consumption. Specifically, by regularly checking the peripheral modules of the main control unit 810, it is determined which modules must be run under the current workload and which modules can be temporarily shut down or dormant. Among them, the main control unit 810 may include multiple functional modules, which may not need to run at the same time. By checking and shutting down unnecessary modules, the overall power consumption and heat generation of the main control unit 810 can be reduced, thereby reducing the temperature. For example, if the memory 800 is currently only performing a read operation, the write module can be temporarily shut down.

[0067] Further, shutting down non-essential modules means only keeping necessary functional modules running, reducing overall power consumption and heat generation. During the operation of the memory 800, the main control unit 810 may have multiple modules working (such as data processing, error correction, communication, etc.). Some modules may be idle or non-essential during a specific operation. By shutting down these unnecessary modules, power consumption and heat generation can be reduced. Each module consumes power and generates heat when running, and shutting them down can reduce the temperature of the main control unit 810.

[0068] Furthermore, lowering the frequency of the main control unit 810 means lowering the processing speed of the main control unit 810, reducing power consumption, and controlling temperature. The frequency inside the main control unit 810 is proportional to its power consumption and heat generation. The faster the main control unit 810 runs, the higher the power consumption and the greater the heat generation. By lowering the frequency of the main control unit 810, power consumption and heat generation can be effectively reduced. In a high temperature environment, by lowering the operating frequency of the main control unit 810, the rate of temperature rise can be slowed down. Although lowering the frequency will lead to performance degradation, it is an effective strategy to protect the memory 800 under high temperature conditions.

[0069] See also Figure 3 and Figure 4In one embodiment, when the ambient temperature rises, the processing module 100 needs to determine whether the increase in the temperature of the main flash memory is greater than the second preset value. When the increase in the temperature of the flash memory is greater than the second preset value, the memory 800 needs to be optimized; otherwise, no optimization is required. For example, when the ambient temperature rises from 25°C to 85°C, it is indicated that the ambient temperature has increased by 60°C. The second preset value can be expressed as 60°C. Subsequently, the increase in the temperature of the flash memory can be calculated. When the increase in the temperature of the flash memory is greater than the second preset value, it means that the temperature management of the flash memory unit 870 needs to be optimized. When optimizing the temperature management of the flash memory unit 870, optimization can be performed in the direction of speed limiting, reducing the read and write speeds, and increasing the idle time.

[0070] Furthermore, speed limiting refers to limiting the read and write speed of the flash memory unit 870 to reduce heat generation. Specifically, by limiting the frequency or speed of the read and write operations of the flash memory unit 870, the working intensity and heat generation of the flash memory unit 870 can be reduced. Each read and write operation of the flash memory unit 870 will generate a certain amount of heat. If the read and write speed is too fast or the operation is too frequent, it will cause heat accumulation and the temperature will rise rapidly. Through speed limiting processing, the data flow and processing times in the flash memory unit 870 can be reduced, thereby reducing its temperature. Although this approach will reduce the performance of the memory, it helps to prevent damage caused by overheating.

[0071] Furthermore, reducing the read and write speed means reducing the data read and write operations to slow down the speed at which the flash memory temperature rises. The read and write operations are one of the main reasons for the flash memory unit 870 to heat up. By reducing the frequency of data read and write or reducing the amount of data transmitted per second, the speed at which the temperature rises can be effectively slowed down. Reducing high-frequency read and write operations helps to reduce heat generation. Although the performance will be reduced, it can prevent the flash memory unit 870 from malfunctioning due to excessive temperature.

[0072] Furthermore, increasing the idle time means giving the flash memory more cooling time and reducing the heat generation. During the operation of the flash memory unit 870, the idle (IDLE) time refers to the rest time of the memory 800 between processing read and write tasks. When the memory 800 is in the IDLE state, the main control unit 810 and the flash memory unit 870 are in a low power consumption mode to reduce energy consumption and heat generation. By increasing the idle time of the flash memory unit 870, it has more time to rest and cool down between workloads, avoiding excessive temperatures caused by continuous high-load work. By appropriately increasing the idle time of the flash memory unit 870, the temperature can be helped to fall back to a safer range.

[0073] See also Figure 3 and Figure 4In one embodiment, when the ambient temperature rises, the processing module 100 needs to determine whether the sequential write performance value of the memory 800 decreases when executing a sequential write operation; when the sequential write performance value decreases, the memory 800 needs to be optimized; otherwise, no optimization is required. When the ambient temperature rises, the processing module 100 needs to determine whether the sequential read performance value of the memory 800 decreases when executing a sequential read operation; when the sequential read performance value decreases, the memory 800 needs to be optimized; otherwise, no optimization is required. Among them, when the sequential write performance value and the sequential read performance value decrease, the optimization direction of the memory 800 can be the same. At this time, optimization can be performed from the optimization direction of the hardware circuit logic level. For example, the capacity of the read cache unit 850 and the write cache unit 860 can be increased. For another example, the size allocation of the capacity of the read cache unit 850 and the write cache unit 860 can be adjusted according to application requirements.

[0074] Furthermore, increasing the capacity of the read cache unit 850 and the write cache unit 860 can improve the sequential read and write speed of the memory 800 and reduce the performance impact caused by high temperature. Specifically, by increasing the capacity of the read cache unit 850 and the write cache unit 860 in the memory 800, the speed of sequential read and write can be effectively improved. When data is read or written from the flash memory unit 870, it can be first stored in the faster read cache unit 850 and the write cache unit 860, and then further processed, which can reduce the performance degradation caused by high temperature. In a high temperature environment, the read cache unit 850 and the write cache unit 860 can be used as an efficient intermediate buffer, reducing the frequent interaction between the main control unit 810 and the flash memory unit 870, thereby improving the speed of sequential read and write. By increasing the capacity of the read cache unit 850 and the write cache unit 860, the data exchange between the memory 800 and the processing module 100 can be buffered, reducing the impact of temperature rise on read and write performance.

[0075] Furthermore, adjusting the size allocation of the capacity of the read cache unit 850 and the write cache unit 860 according to the application requirements can improve the performance of the memory 800 under specific read and write loads. Specifically, in actual applications, the read and write requirements of the memory 800 may not be symmetrical. For example, some applications perform more read operations, while other applications focus on write operations. Therefore, dynamically adjusting the allocation of the capacity of the read cache unit 850 and the write cache unit 860 according to the read and write ratio of the actual application is an important optimization direction. By allocating the size of the capacity of the read cache unit 850 and the write cache unit 860 according to the actual read and write requirements, cache resources can be used more effectively. For example, if the application has more read operations, more read cache units 850 can be allocated to sequential read operations to improve reading efficiency. By dynamically adjusting the allocation ratio of the read cache unit 850 and the write cache unit 860, the performance of the memory can be optimized according to the different loads of read and write operations, especially reducing the bottleneck of read and write operations in high temperature environments.

[0076] In one embodiment, when the ambient temperature rises, the processing module 100 needs to determine whether the random write performance value of the memory 800 decreases when performing a random write operation; when the random write performance value decreases, the memory 800 needs to be optimized; otherwise, no optimization is required. When the ambient temperature rises, the processing module 100 needs to determine whether the random read performance value of the memory 800 decreases when performing a random read operation; when the random read performance value decreases, the memory 800 needs to be optimized; otherwise, no optimization is required. Among them, when the random write performance value and the random read performance value decrease, the optimization direction of the memory 800 can be the same. At this time, optimization can be performed from the direction of optimizing the firmware table lookup algorithm, reducing background operations, and optimizing the code.

[0077] Furthermore, optimizing the firmware lookup algorithm refers to reducing the lookup delay and improving random read and write performance. Specifically, in the firmware of the memory 800, the lookup table operation is used to quickly locate and access data or addresses in the memory. The lookup operation frequently occurs in random read and write operations, and the firmware needs to find the corresponding data storage location by looking up the table. When the ambient temperature rises and the performance degrades, the efficiency of the lookup algorithm becomes critical. By optimizing the lookup algorithm, the time to find data in each read and write operation can be reduced, and the overall access speed can be improved.

[0078] Furthermore, reducing background operations means: reducing the resource usage of background tasks and ensuring that foreground tasks are processed first. Specifically, background operations (BKOPS) refer to some maintenance operations performed by the firmware of the memory 800 in the background, such as garbage collection, wear leveling, etc. Although these operations are performed automatically, they occupy a portion of system resources and will affect the random read and write performance of the memory. In a high temperature environment, the background operations can be reduced or postponed to ensure that the foreground read and write operations proceed smoothly. High temperature will reduce the processing power of the memory 800 itself. If a large number of background operations are still being performed at this time, the random read and write performance of the foreground will be further affected.

[0079] Furthermore, optimizing the code means improving the operating efficiency of the firmware at high temperatures by simplifying and optimizing the code. Specifically, the firmware of the memory 800 is the core program of the memory 800. By optimizing the code writing of the firmware, the execution time and complexity of the program can be reduced, thereby improving the random read and write performance. By reducing unnecessary code steps or optimizing the algorithm flow, the computing load of the firmware in a high temperature environment can be reduced, thereby improving the response speed of the memory 800.

[0080] See also Figure 3 and Figure 4 , in one embodiment, Figure 3 It shows the relationship curve between the temperature of the main control unit 810 and time, the relationship curve between the temperature of the flash memory unit 870 and time, and the relationship curve between the sequential write performance value and time under an ambient temperature of 25°C. Figure 4 The graphs show the relationship between the temperature of the main control unit 810 and time, the relationship between the temperature of the flash memory unit 870 and time, and the relationship between the sequential write performance value and time at an ambient temperature of 85°C. Figure 3 and Figure 4 The specific length of the interval between two adjacent sampling points may not be limited, for example, it may be 5 minutes. Figure 3 and Figure 4 The reason why the sequential write performance value suddenly drops at a certain time point is that the write mode of the memory 800 switches from the SLC (Single-Level Cell) mode to the XLC mode (for example, the MLC (Multi-Level Cell) mode, the TLC (Triple-Level Cell) mode, the QLC (Quad-Level Cell) mode), which leads to the performance degradation problem. In order to cope with this performance degradation, the degree of speed degradation can be slowed down by optimizing the firmware algorithm.

[0081] See also Figure 5 and Figure 6, in one embodiment, Figure 5 It shows the current values ​​of the VCC pin and the VCCQ pin under different operations (sequential write operation, random write operation, sequential read operation, random read operation) of the memory 800 in different speed modes (DDR52, HS200, HS400) at an ambient temperature of 25°C. Figure 6 It shows the current values ​​of the VCC pin and VCCQ pin in different operations (sequential write operation, random write operation, sequential read operation, random read operation) of the memory 800 in different speed modes (DDR52, HS200, HS400) at an ambient temperature of 85°C. Among them, Figure 5 and Figure 6 The vertical axis refers to the current in mA. In the horizontal axis, SR-VCCQ refers to the current value of the VCCQ pin during sequential read operation, SR-VCC refers to the current value of the VCC pin during sequential read operation, SW-VCCQ refers to the current value of the VCCQ pin during sequential write operation, SW-VCC refers to the current value of the VCC pin during sequential write operation, RR-VCCQ refers to the current value of the VCCQ pin during random read operation, RR-VCC refers to the current value of the VCC pin during random read operation, RW-VCCQ refers to the current value of the VCCQ pin during random write operation, and RW-VCC refers to the current value of the VCC pin during random write operation. By calculating the product of the current value of the VCC pin and its corresponding voltage value, the power consumption data of the VCC pin can be calculated. By calculating the product of the current value of the VCCQ pin and its corresponding voltage value, the power consumption data of the VCCQ pin can be calculated.

[0082] See also Figure 5 and Figure 6 In one embodiment, when the ambient temperature rises, the processing module 100 needs to determine whether the power consumption data of the main control unit 810 at a higher ambient temperature is greater than the power consumption data at a lower ambient temperature; when the power consumption data of the main control unit 810 at a higher ambient temperature is greater than the power consumption data at a lower ambient temperature, the memory 800 needs to be optimized; otherwise, no optimization is required. When the ambient temperature rises, the processing module 100 needs to determine whether the power consumption data of the flash memory unit 870 at a higher ambient temperature is greater than the power consumption data at a lower ambient temperature; when the power consumption data of the flash memory unit 870 at a higher ambient temperature is greater than the power consumption data at a lower ambient temperature, the memory 800 needs to be optimized; otherwise, no optimization is required. Among them, when the power consumption data of the main control unit 810 and the flash memory unit 870 increase, the optimization direction of the memory 800 can be the same. At this time, optimization can be performed in the direction of reducing the supply voltage, optimizing the clock frequency, reducing unnecessary operations, and optimizing the power management algorithm of the firmware and hardware.

[0083] Further, lowering the supply voltage refers to reducing power consumption by lowering the voltage of the VCC pin and the VCCQ pin. Specifically, power consumption can be reduced by appropriately lowering the voltage of the VCC pin and the VCCQ pin. The power consumption of the memory 800 is positively correlated with the voltage, so lowering the voltage can significantly reduce power consumption. By adjusting the voltage of the VCCQ pin, power consumption during data transmission can be reduced. Where possible, by lowering the voltage of the VCCQ pin (keeping the memory 800 within a stable operating range), the relevant power consumption can be reduced. Appropriately lowering the voltage of the VCC pin can reduce the power consumption of the core circuit of the memory 800, especially in a high temperature environment, a lower core voltage helps control power consumption and heat. For example, dynamic voltage scaling technology can be used to dynamically adjust the voltage of the VCC pin and the VCCQ pin according to different workloads and temperatures to ensure that power consumption is minimized under light load and high temperature conditions.

[0084] Furthermore, optimizing the clock frequency refers to reducing power consumption by lowering the clock frequency of the memory 800. Specifically, the operating frequency of the memory 800 directly affects its power consumption. As the clock frequency increases, the power consumption also increases accordingly. In a high temperature environment, appropriately reducing the operating frequency of the memory 800 can reduce power consumption and reduce heat generation. By dynamically adjusting the clock frequency, the frequency is increased when high performance is required, and the frequency is reduced when the temperature is high or the load is low. For example, the power consumption of the VCCQ pin is related to the data transmission frequency. By reducing the data transmission rate, the power consumption of the VCCQ pin can be reduced. For another example, the power consumption of the VCC pin is related to the internal operation and data processing frequency. By reducing the core operating frequency, the power consumption can be significantly reduced.

[0085] Furthermore, reducing unnecessary operations means reducing background tasks and invalid operations to save power. Specifically, in a high temperature environment, reducing unnecessary operations and background tasks (such as garbage collection, background writing, etc.) of the memory 800 can effectively reduce power consumption. For example, reducing background garbage collection operations and reducing useless data reading and writing. These operations consume a lot of power and can delay or reduce unnecessary background tasks, thereby reducing power consumption. By optimizing the read and write strategy, redundant data read and write operations are reduced, thereby reducing the overall power consumption of the memory 800.

[0086] Furthermore, optimizing the power management algorithm of the firmware and hardware refers to dynamically adjusting the voltage and frequency through power management. Specifically, by optimizing the power management algorithm in the firmware of the memory 800, the voltage and power consumption of the VCC pin and the VCCQ pin are dynamically adjusted to adapt to the current load and temperature environment. For example, the firmware can monitor the temperature and dynamically adjust the voltage and frequency according to the temperature to control the power consumption. For another example, the power management algorithm in the firmware is optimized to reduce unnecessary power consumption and ensure a balance between power consumption control and performance.

[0087] In one embodiment, the above optimization method can achieve the optimization goals of high performance, low energy consumption and low temperature of the memory 800.

[0088] It can be seen that in the above scheme, the differences in performance, power consumption, and temperature of the memory can be accurately quantified and analyzed, especially in complex application scenarios, to evaluate the stability and risks of different memories in actual use. The running behavior of the firmware and hardware inside the memory can be fully monitored to obtain performance, power consumption, and temperature in real time. This monitoring is not limited to a single dimension, but can simultaneously analyze the correlation of multiple dimensions (such as performance, power consumption, and temperature), thereby providing a more comprehensive system health status analysis. At the same time, it can quickly and accurately locate the correlation between performance, power consumption, and temperature at the same time point, and perform linkage analysis simultaneously. This synchronous analysis can better reveal the true performance of the test system under different operating conditions and help optimize the overall performance of the memory.

[0089] The present invention also provides a memory testing method, which can be applied to the above-mentioned testing system, and the testing method may include the following steps: Regulating the ambient temperature of the storage device; Under different ambient temperatures, different read and write instructions and corresponding test data are sent to the memory; Obtain power consumption data when the memory performs read and write operations according to read and write instructions; Acquire the main control temperature of the main control unit and the flash memory temperature of the flash memory unit when the memory performs a read and write operation according to a read and write instruction; The read and write performance values ​​are calculated based on the test data when the memory performs read and write operations according to the read and write instructions.

[0090] The embodiments of the present invention disclosed above are only used to help illustrate the present invention. The embodiments do not describe all the details in detail, nor do they limit the invention to the specific embodiments described. Obviously, many modifications and changes can be made according to the content of this specification. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can understand and use the present invention well. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. A memory testing system, characterized in that: include: Test thermostat, used to control ambient temperature; A test board is located in the test incubator, and a memory is electrically connected to the test board; A processing module is located on the test board and is electrically connected to the test temperature box to obtain the ambient temperature; the processing module is also used to send different read and write instructions and corresponding test data to the memory at different ambient temperatures; A power module, located on the test board, for supplying power to the processing module and the memory; as well as A power consumption module, located on the test board and electrically connected between the power supply module and the memory, for monitoring the power consumption data of the memory; the power consumption module is also used to transmit the power consumption data to the processing module; Wherein, the memory performs a read and write operation according to the read and write instruction, and transmits the main control temperature of the main control unit of the memory and the flash memory temperature of the flash memory unit to the processing module; The processing module is also used to calculate the read-write performance value according to the test data of the memory when performing the read-write operation.

2. The memory test system according to claim 1, characterized in that: The memory comprises: a main control monitoring unit, used to monitor the main control temperature of the main control unit of the memory when performing read and write operations; and The flash memory monitoring unit is used to monitor the flash memory temperature of the flash memory unit of the memory when performing read and write operations.

3. The memory test system according to claim 1, characterized in that: When the ambient temperature increases, the processing module determines whether the increase in the main control temperature is greater than a first preset value; When the temperature increased by the main control temperature is greater than a first preset value, the memory is optimized; otherwise, no optimization is required.

4. The memory test system according to claim 1, characterized in that: When the ambient temperature rises, the processing module determines whether the increase in the flash memory temperature is greater than a second preset value; when the increase in the flash memory temperature is greater than the second preset value, the memory is optimized; otherwise, no optimization is required.

5. The memory test system according to claim 1, characterized in that: When the ambient temperature changes, the processing module determines whether the power consumption data of the main control unit at a higher ambient temperature is greater than the power consumption data at a lower ambient temperature; when the power consumption data of the main control unit at a higher ambient temperature is greater than the power consumption data at a lower ambient temperature, the memory is optimized; otherwise, no optimization is required.

6. The memory test system according to claim 1, characterized in that: When the ambient temperature changes, the processing module determines whether the power consumption data of the flash memory unit at a higher ambient temperature is greater than the power consumption data at a lower ambient temperature; when the power consumption data of the flash memory unit at a higher ambient temperature is greater than the power consumption data at a lower ambient temperature, the memory is optimized; otherwise, no optimization is required.

7. The memory test system according to claim 1, characterized in that: The test data includes first data and second data; When the processing module sends a write instruction, the memory writes the first data in a sequential write manner and writes the second data in a random write manner; When the processing module sends a read instruction, the memory reads out the first data in a sequential read manner and reads out the second data in a random read manner.

8. The memory test system according to claim 7, characterized in that: When the ambient temperature increases, the processing module determines whether a sequential write performance value of the memory decreases when executing a sequential write operation; if the sequential write performance value decreases, the memory is optimized; otherwise, no optimization is required; When the ambient temperature increases, the processing module determines whether a sequential read performance value of the memory decreases when executing a sequential read operation; When the sequential read performance value decreases, the memory is optimized; otherwise, no optimization is required.

9. The memory test system according to claim 7, characterized in that: When the ambient temperature increases, the processing module determines whether a random write performance value of the memory decreases when performing a random write operation; when the random write performance value decreases, the memory is optimized; otherwise, no optimization is required; When the ambient temperature increases, the processing module determines whether a random read performance value of the memory decreases when performing a random read operation; When the random read performance value decreases, the memory is optimized; otherwise, no optimization is required.

10. A memory testing method, characterized in that: include: Regulating the ambient temperature of the storage device; sending different read and write instructions and corresponding test data to the memory at different ambient temperatures; Acquiring power consumption data when the memory performs read and write operations according to read and write instructions; Acquire a main control temperature of a main control unit and a flash memory temperature of a flash memory unit when the memory performs a read / write operation according to a read / write instruction; The read / write performance value is calculated based on the test data when the memory performs the read / write operation according to the read / write instruction.

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