Semiconductor device and operating method of semiconductor device
By introducing an internal switching circuit into a semiconductor device, the external pulse signal is converted into an internal pulse signal, and the problem of insufficient reading accuracy in 3D X-point memory is solved, achieving higher reading window margin and accurate intrinsic holding voltage.
Patent Information
- Application Number
- CN202411559741.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-04
- Publication Date
- 2025-03-28
- Estimated Expiration
- 2044-11-04
AI Technical Summary
In 3D X-point memory, the method of increasing the storage density is approaching the limit, and the reading accuracy is insufficient, resulting in insufficient reading window margin (RWM), which is difficult to effectively solve.
By designing a semiconductor device, including a bidirectional threshold switching device and an internal switching circuit, the internal switching circuit is used to convert the external pulse signal into an internal pulse signal, thereby improving pulse accuracy, reducing bias stress, and accurately obtaining the device's intrinsic holding voltage through testing of different currents.
It achieves improving pulse accuracy, reducing bias stress, accurately obtaining the device's intrinsic holding voltage, thereby improving read accuracy and read window margin.