Monatomic layer polariton sequence dual-parameter terahertz device and preparation method thereof

Abstract

The invention discloses a monatomic layer polariton sequence structure double-parameter terahertz device and a preparation method thereof, and the monatomic layer polariton sequence structure double-parameter terahertz device comprises a dielectric substrate, a metal electrode and a sequence structure detection material. The number of the sequential detection materials is one less than that of the metal electrodes; the plurality of metal electrodes are sequentially arranged on the dielectric substrate along a first direction; the sequential detection material is made of a monatomic layer two-dimensional crystal; the sequential detection material comprises a plurality of sequential strips and connecting parts arranged at the two ends of the sequential strips, each sequential strip is formed by sequentially connecting a plurality of sequential elements with the same shape, and the sequential strips are sequentially distributed on the dielectric substrate in the second direction; the shapes of the sequence elements of the sequence detection materials are different; the connecting parts, arranged at the two ends of the sequence strip, of each sequence detection material are connected with the two adjacent metal electrodes in the first direction; wherein the first direction is perpendicular to the second direction.

Description

Technical Field

[0001] The present invention relates to the field of terahertz detection technology, and in particular to a single atomic layer polariton sequence dual-parameter terahertz device and a preparation method thereof. Background Art

[0002] The terahertz band is an electromagnetic wave spectrum that connects the microwave and infrared bands, and the corresponding electromagnetic wave frequency is 0.1-10THz. The electromagnetic waves in this frequency band have many unique physical properties such as low photon energy, strong penetration, and rich molecular fingerprint characteristics. It has great application prospects in non-destructive testing, medical diagnosis, and wireless communications. At present, terahertz detection technology is mainly divided into thermal detection technology, photon detection technology, and electronic detection technology.

[0003] Thermosensitive detection technology uses thermosensitive materials to absorb terahertz waves, causing changes in the physical properties of the materials to achieve terahertz detection. Typical detectors include Golay detectors, thermal radiation detectors and pyroelectric detectors. The detectors have the characteristics of wide response spectrum range and high response sensitivity, but the response speed of the detectors is slow; photon detection technology is based on the intra-band transition or inter-band transition effect of semiconductors to achieve terahertz detection. Typical detectors include photoconductive detectors, quantum well detectors and superconducting detectors. The detectors have the advantages of fast response speed and high response sensitivity, but the materials used have relatively large noise when working at room temperature, causing the detectors to work under low temperature conditions; electronic detection technology is an extension of microwave technology in the terahertz band, and uses the nonlinear interaction between terahertz waves and material electrons to achieve terahertz detection. Typical detectors include Schottky diodes, field effect transistors and high electron mobility transistors, but the device preparation process is relatively complicated and the preparation cost is relatively high. Summary of the invention

[0004] The purpose of the present invention is to provide a single atomic layer polariton order dual parameter terahertz device and a preparation method thereof, wherein the terahertz device can simultaneously have the characteristics of wide response spectrum, high response sensitivity, fast response speed and detection of terahertz dual parameters.

[0005] In order to achieve the above-mentioned object, the present invention provides a single atomic layer polaritons structure dual parameter terahertz device, comprising: a dielectric substrate, a metal electrode and a structure detection material;

[0006] There are at least three metal electrodes, and the number of the sequence detection materials is one less than the number of the metal electrodes;

[0007] The plurality of metal electrodes are arranged in sequence along a first direction on the dielectric substrate;

[0008] The material of the structure detection material is a single atomic layer two-dimensional crystal;

[0009] The sequence structure detection material comprises a plurality of sequence structure strips and connecting parts arranged at both ends of the sequence structure strips, the sequence structure strips are formed by sequentially connecting a plurality of sequence structure elements of the same shape, and the plurality of sequence structure strips are sequentially distributed along the second direction on the dielectric substrate;

[0010] The shapes of the sequence elements of each of the sequence detection materials are different;

[0011] The connection parts of each of the sequence structure detection materials disposed at both ends of the sequence structure strip are respectively connected to two adjacent metal electrodes in the first direction;

[0012] Wherein, the first direction and the second direction are perpendicular to each other.

[0013] Preferably, there are three metal electrodes, namely a first metal electrode, a second metal electrode and a third metal electrode, and the first metal electrode, the second metal electrode and the third metal electrode are arranged in sequence along a first direction on the dielectric substrate;

[0014] The sequence structure detection material is provided with two, namely a first sequence structure detection material and a second sequence structure detection material, the shape of the sequence structure element of the first sequence structure detection material is circular, the shape of the sequence structure element of the second sequence structure detection material is rectangular, and the resonance frequency of the sequence structure element of the first sequence structure detection material and the sequence structure element of the second sequence structure detection material are the same;

[0015] The connecting parts at both ends of the first sequence detection material are respectively connected to the first metal electrode and the second metal electrode in the first direction, and the connecting parts at both ends of the second sequence detection material are respectively connected to the second metal electrode and the third metal electrode in the first direction.

[0016] Preferably, the duty ratio of the first sequence detection material and the second sequence detection material is 1:1.

[0017] Preferably, the shape of the sequence-building units of the plurality of sequence-building detection materials is a circle with different diameters, and the resonance frequency of each sequence-building unit of the sequence-building detection material is different.

[0018] Preferably, the structure detection material is prepared from a single atomic layer two-dimensional crystal by micro-nano processing technology.

[0019] Preferably, the dielectric substrate is any one of a sapphire substrate, a quartz substrate and an intrinsic silicon substrate containing silicon oxide.

[0020] The present invention provides a method for preparing a single atomic layer polariton-ordered dual-parameter terahertz device, comprising the following steps:

[0021] S1: forming a metal electrode film on a dielectric substrate, and then using a lift-off process to manufacture a plurality of metal electrodes arranged in sequence along a first direction;

[0022] S2: separating a plurality of single-atomic-layer two-dimensional crystals of single-atomic-layer two-dimensional materials from the material substrate, transferring the plurality of single-atomic-layer two-dimensional crystals to the dielectric substrate, and connecting two adjacent metal electrodes at both ends of each single-atomic-layer two-dimensional crystal in a first direction;

[0023] S3: Using micro-nano processing technology to process the single atomic layer two-dimensional crystal to form a structure detection material.

[0024] Preferably, S2 specifically includes:

[0025] S21: spin coating a polystyrene film on the surface of a plurality of single atomic layer two-dimensional materials, and the single atomic layer two-dimensional crystal 8 of the single atomic layer two-dimensional material is bonded to the polystyrene film, thereby separating the single atomic layer two-dimensional crystal 8 from the material substrate;

[0026] S22: Use a high molecular polymer PDMS film to bond a polystyrene film to form a composition, and then use a transfer device to transfer the composition to the dielectric substrate, remove the high molecular polymer PDMS film and the polystyrene film, and leave the plurality of single atomic layer two-dimensional crystals on the dielectric substrate coated with metal electrodes, and the two ends of each single atomic layer two-dimensional crystal are respectively connected to two adjacent metal electrodes in the first direction.

[0027] The embodiment of the present invention is a single-atom-layer polariton sequence dual-parameter terahertz device and a preparation method. Compared with the prior art, the beneficial effects are as follows: a single-atom-layer two-dimensional crystal is processed into a sequence detection material with polariton resonance, the sequence detection material comprises a plurality of sequence strips and connecting parts arranged at both ends of the sequence strips, the sequence strips are formed by connecting a plurality of sequence elements of the same shape, the plurality of sequence strips are sequentially distributed along the second direction on a dielectric substrate, the connecting parts of each sequence detection material arranged at both ends of the sequence strip are respectively connected to two adjacent metal electrodes in the first direction to form a series structure, since the shape of the sequence elements of each sequence detection material is different, and the sequence detection material composed of sequence elements of different shapes can detect different parameters for terahertz, the terahertz device formed by connecting a plurality of sequence detection materials in series can detect multiple parameters of terahertz;

[0028] When a single-atomic-layer polariton-ordered dual-parameter terahertz device is placed in a terahertz electromagnetic field, the plasmon-polariton effect of the order-structured detection material can enhance the interaction between the order-structured detection material and the terahertz electromagnetic field and enhance the terahertz absorption capacity, thereby generating hot carriers inside the order-structured detection material. The hot carriers move in a directed manner under the temperature gradient through the Seebeck effect and generate photocurrent, thereby realizing the detection of terahertz parameters.

[0029] In the single-atom-layer polaritons-ordered dual-parameter terahertz device of the present application, the plasmon polaritons effect of the sequence detection material can enhance the interaction between the sequence detection material and the terahertz electromagnetic field and enhance the absorption capacity of terahertz, and multiple sequence detection materials are connected in series to form a device that can detect multiple terahertz parameters. Therefore, the single-atom-layer polaritons-ordered dual-parameter terahertz device of the present application has the advantages of wide response spectrum, high response sensitivity, fast response speed and detection of multiple terahertz parameters, and the detector is small in size, low in noise when working at room temperature, and is not limited to working in a low-temperature environment. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 1 is a schematic diagram of a top view of the structure of a single atomic layer polariton-ordered dual-parameter terahertz device according to an embodiment of the present invention;

[0031] Figure 2 1 is a schematic diagram of the front view structure of the single atomic layer polariton order dual parameter terahertz device according to an embodiment of the present invention;

[0032] Figure 3 is a schematic diagram of a top view of a single atomic layer polariton-ordered dual-parameter terahertz device according to another embodiment of the present invention;

[0033] Figure 4 It is a schematic diagram of the preparation process of the single atomic layer polariton order dual parameter terahertz device according to an embodiment of the present invention;

[0034] In the figure, 1. dielectric substrate; 2. first metal electrode; 3. second metal electrode; 4. third metal electrode; 5. sequence structure detection material; 51. sequence structure strip; 52. connecting part; 511. sequence structure unit; 6. first sequence structure detection material; 7. second sequence structure detection material; 8. single atomic layer two-dimensional crystal. DETAILED DESCRIPTION

[0035] The following is a further detailed description of the present invention in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention but are not intended to limit the scope of the present invention.

[0036] In the description of the present invention, it should be understood that the terms "first", "second" and "third" used in the present invention are only used for descriptive purposes and cannot be understood as indicating or implying relative importance. In the description of the embodiments of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, and it can be the internal connection of two elements. For ordinary technicians in this field, the more specific meanings of the above terms in the embodiments of the present invention can be understood in more specific situations.

[0037] The English abbreviations involved in the present invention are explained as follows:

[0038] PDMS: Polydimethylsiloxane.

[0039] like Figure 1-2 As shown, a single atomic layer polaritons structure dual parameter terahertz device according to an embodiment of the present invention comprises: a dielectric substrate 1, a metal electrode (not shown in the figure) and a structure detection material 5;

[0040] There are at least three metal electrodes, and the number of sequence detection materials 5 is one less than the number of metal electrodes;

[0041] A plurality of metal electrodes are arranged in sequence along a first direction X on a dielectric substrate 1;

[0042] The material of the sequence detection material 5 is a single atomic layer two-dimensional crystal;

[0043] The sequence detection material 5 includes a plurality of sequence strips 51 and connecting parts 52 arranged at both ends of the sequence strips 51. The sequence strips 51 are formed by sequentially connecting a plurality of sequence elements 511 of the same shape. The plurality of sequence strips 51 are sequentially distributed along the second direction Y on the dielectric substrate 1.

[0044] The shapes of the sequence elements 511 of each sequence detection material 5 are different;

[0045] The connection parts 52 of each sequence detection material 5 disposed at both ends of the sequence strip 51 are respectively connected to two adjacent metal electrodes in the first direction X;

[0046] The first direction X and the second direction Y are perpendicular to each other.

[0047] It should be noted that the single atomic layer two-dimensional crystal is processed into a sequence detection material 5 with polariton resonance, the sequence detection material 5 includes a plurality of sequence strips 51 and connecting parts 52 arranged at both ends of the sequence strips 51, the sequence strips 51 are connected by a plurality of sequence elements 511 of the same shape, and the plurality of sequence strips 51 are sequentially distributed along the second direction Y on the dielectric substrate 1, and the connecting parts of each sequence detection material 5 arranged at both ends of the sequence strip 51 are respectively connected to two adjacent metal electrodes in the first direction X of 52 to form a series structure. Since the shape of the sequence elements 511 of each sequence detection material 5 is different, and the sequence detection material 5 composed of sequence elements 511 of different shapes can detect different parameters for terahertz, the terahertz device formed by connecting a plurality of sequence detection materials 5 in series can detect multiple parameters of terahertz;

[0048] When a single-atomic-layer polariton-ordered dual-parameter terahertz device is placed in a terahertz electromagnetic field, the plasmon-polariton effect of the order-structured detection material 5 can enhance the interaction between the order-structured detection material 5 and the terahertz electromagnetic field and enhance the terahertz absorption capacity, thereby generating hot carriers inside the order-structured detection material 5. The hot carriers move in a directed manner under the temperature gradient through the Seebeck effect and generate photocurrent, thereby realizing the detection of terahertz parameters.

[0049] In the single-atom-layer polaritons-ordered dual-parameter terahertz device of the present application, the plasmon polaritons effect of the sequence detection material 5 can enhance the interaction between the sequence detection material 5 and the terahertz electromagnetic field and enhance the absorption capacity of terahertz, and multiple sequence detection materials 5 are connected in series to form a device that can detect multiple parameters of terahertz. Therefore, the single-atom-layer polaritons-ordered dual-parameter terahertz device of the present application has the advantages of wide response spectrum, high response sensitivity, fast response speed and detection of multiple terahertz parameters, and the detector is small in size, has low noise when working at room temperature, and is not limited to working in a low-temperature environment.

[0050] See also Figure 1-2 In a more specific embodiment, there are three metal electrodes, namely a first metal electrode 2, a second metal electrode 3 and a third metal electrode 4, and the first metal electrode 2, the second metal electrode 3 and the third metal electrode 4 are arranged in sequence along a first direction X on the dielectric substrate 1;

[0051] There are two sequence structure detection materials 5, namely, a first sequence structure detection material 6 and a second sequence structure detection material 7. The shape of the sequence structure element 511 of the first sequence structure detection material 6 is circular, and the shape of the sequence structure element 511 of the second sequence structure detection material 7 is rectangular. The resonance frequencies of the sequence structure element 511 of the first sequence structure detection material 6 and the sequence structure element 511 of the second sequence structure detection material 7 are the same.

[0052] The connecting parts 52 at both ends of the first sequence detection material 6 are respectively connected to the first metal electrode 2 and the second metal electrode 3 in the first direction X, and the connecting parts 52 at both ends of the second sequence detection material 7 are respectively connected to the second metal electrode 3 and the third metal electrode 4 in the first direction X.

[0053] It should be noted that the circular sequence element 511 of the first sequence detection material 6 and the rectangular sequence element 511 of the second sequence detection material 7 have different sensitivities to polarization. Therefore, when the resonance frequencies of the circular sequence element 511 of the first sequence detection material 6 and the rectangular sequence element 511 of the second sequence detection material 7 are the same, the detection of the dual parameters of terahertz intensity and polarization can be achieved at the same frequency.

[0054] The resonance frequency of the circular sequence building element 511 is related to the diameter of the circle, and the resonance frequency of the rectangular sequence building element 511 is related to the length / width of the rectangle. The resonance frequencies can be made the same by adjusting the sizes of the circular sequence building element 511 and the rectangular sequence building element 511 in the two sequence detection materials 5.

[0055] See also Figure 1-2 In a more specific embodiment, the duty ratio of the first sequence detection material 6 and the second sequence detection material 7 is 1:1.

[0056] It should be noted that when the duty ratio of the first sequence detection material 6 and the second sequence detection material 7 is 1:1, the absorption capacity of terahertz is the strongest.

[0057] See also Figure 3 In a more specific embodiment, the sequence-building units 511 of the plurality of sequence-building detection materials 5 are in the shape of circles with different diameters, and the resonance frequency of the sequence-building units 511 of each sequence-building detection material 5 is different.

[0058] It should be noted that the shapes of the sequence-building units 511 of multiple sequence-building detection materials 5 are circles with different diameters, and the resonance frequencies of the sequence-building units 511 of each sequence-building detection material 5 are different. However, since the sequence-building units 511 of the sequence-building detection materials 5 are all circles, they have the same sensitivity to polarization. Therefore, under the same polarization, dual-parameter detection of terahertz intensity and frequency can be achieved, and the number of frequencies that can be measured is the same as the number of sequence-building detection materials 5.

[0059] See also Figure 1-2 In a more specific embodiment, the structure detection material 5 is made of a single atomic layer two-dimensional crystal through micro-nano processing technology.

[0060] It should be noted that by processing the single atomic layer two-dimensional crystal through micro-nano processing technology, it is possible to process the sequence detection material 5 with a more precise shape.

[0061] See also Figure 1-2 In a more specific embodiment, the dielectric substrate 1 is any one of a sapphire substrate, a quartz substrate and an intrinsic silicon substrate containing silicon oxide.

[0062] It should be noted that the dielectric substrate 1 is an insulating dielectric substrate that is nano-level flat and has as few dangling bonds as possible, and has a relatively small thermal conductivity, such as a sapphire substrate, a quartz substrate, and an intrinsic silicon substrate containing silicon oxide, to prevent the dielectric substrate 1 from being affected by high temperatures during the process.

[0063] See also Figure 4 A method for preparing a single atomic layer polariton-ordered dual-parameter terahertz device according to an embodiment of the present invention comprises the following steps:

[0064] S1: forming a metal electrode film on a dielectric substrate 1, and then using a lift-off process to manufacture a plurality of metal electrodes arranged in sequence along a first direction X;

[0065] S2: separating the single atomic layer two-dimensional crystals 8 of multiple single atomic layer two-dimensional materials from the material substrate, transferring the multiple single atomic layer two-dimensional crystals 8 to the dielectric substrate 1, and connecting two adjacent metal electrodes at both ends of each single atomic layer two-dimensional crystal 8 in the first direction X;

[0066] S3: Using micro-nano processing technology to process the single atomic layer two-dimensional crystal 8 to form a sequence detection material 5.

[0067] In a more specific embodiment, S2 specifically includes:

[0068] S21: spin coating a polystyrene film on the surface of a plurality of single atomic layer two-dimensional materials, and the single atomic layer two-dimensional crystal 8 of the single atomic layer two-dimensional material is bonded to the polystyrene film, thereby separating the single atomic layer two-dimensional crystal 8 from the material substrate;

[0069] S22: using a polymer PDMS film to bond a polystyrene film to form a composition, and then using a transfer device to transfer the composition to a dielectric substrate 1, removing the polymer PDMS film and the polystyrene film, leaving a plurality of single-atomic-layer two-dimensional crystals 8 on the dielectric substrate 1 coated with metal electrodes, and connecting two adjacent metal electrodes at both ends of each single-atomic-layer two-dimensional crystal 8;

[0070] See also Figure 4 In a more specific embodiment, a method for preparing a single atomic layer polariton-ordered dual-parameter terahertz device comprises the following steps:

[0071] S1: Clean the dielectric substrate 1 with acetone, alcohol and pure water in sequence, and dry the dielectric substrate, spin-coat a photoresist on the first surface of the cleaned dielectric substrate 1, and prepare an electrode pattern by exposure, and evaporate a metal electrode layer on the surface of the sample after the previous photolithography by electron beam evaporation, magnetron sputtering or thermal evaporation, plate 5-10nm titanium and 50-200nm gold to form a metal electrode film, and then use a lift-off process to manufacture a plurality of metal electrodes arranged in sequence along the first direction X;

[0072] S21: spin coating a polystyrene film on the surface of a plurality of single atomic layer two-dimensional materials, and the single atomic layer two-dimensional crystal 8 of the single atomic layer two-dimensional material is bonded to the polystyrene film, thereby separating the single atomic layer two-dimensional crystal 8 from the material substrate;

[0073] S22: using a polymer PDMS film to bond a polystyrene film to form a composition, and then using a transfer device to transfer the composition to a dielectric substrate 1, removing the polymer PDMS film and the polystyrene film, leaving a plurality of single-atomic-layer two-dimensional crystals 8 on the dielectric substrate 1 coated with metal electrodes, and connecting two adjacent metal electrodes at both ends of each single-atomic-layer two-dimensional crystal 8;

[0074] S3: Using a micro-nano processing technology including surface spin coating of photoresist, exposure, etching, desizing and high-temperature annealing steps, the single atomic layer two-dimensional crystal 8 is processed to prepare a structure detection material 5.

[0075] It should be noted that single-atom-layer two-dimensional materials include polaritonic two-dimensional materials such as graphene;

[0076] In step S2 , a polystyrene membrane is used to separate the single atomic layer two-dimensional crystal 8 and the material substrate. This separation method is gentle and will not damage the single atomic layer two-dimensional crystal 8 .

[0077] The working process of the present invention is as follows: a single atomic layer two-dimensional crystal is processed into a sequenced structure detection material 5 with polariton resonance, wherein the sequenced structure detection material 5 comprises a plurality of sequenced structure strips 51 and connecting parts 52 arranged at both ends of the sequenced structure strips 51, wherein the sequenced structure strips 51 are connected by a plurality of sequenced structure primitives 511 of the same shape, wherein the plurality of sequenced structure strips 51 are sequentially distributed along the second direction Y on the dielectric substrate 1, and the connecting parts of each sequenced structure detection material 5 arranged at both ends of the sequenced structure strip 51 are respectively connected to two adjacent metal electrodes in the first direction X of 52 to form a series structure, and since the shape of the sequenced structure primitives 511 of each sequenced structure detection material 5 is different, and the sequenced structure detection material 5 composed of sequenced structure primitives 511 of different shapes can detect different parameters for terahertz, the terahertz device formed by connecting a plurality of sequenced structure detection materials 5 in series can detect multiple parameters of terahertz;

[0078] When a single-atomic-layer polariton-ordered dual-parameter terahertz device is placed in a terahertz electromagnetic field, the plasmon-polariton effect of the order-structured detection material 5 can enhance the interaction between the order-structured detection material 5 and the terahertz electromagnetic field and enhance the terahertz absorption capacity, thereby generating hot carriers inside the order-structured detection material 5. The hot carriers move in a directed manner under the temperature gradient through the Seebeck effect and generate photocurrent, thereby realizing the detection of terahertz parameters.

[0079] In summary, the embodiment of the present invention provides a single atomic layer polaritons order dual parameter terahertz device and a preparation method, because the plasmon polaritons effect of the order detection material 5 can enhance the interaction between the order detection material 5 and the terahertz electromagnetic field and enhance the absorption capacity of terahertz, and multiple order detection materials 5 are connected in series to form a device that can detect multiple parameters of terahertz. Therefore, the single atomic layer polaritons order dual parameter terahertz device of the present application has the advantages of wide response spectrum, high response sensitivity, fast response speed and detection of multiple terahertz parameters, and the detector is small in size, low in noise when working at room temperature, and is not limited to work in a low temperature environment.

[0080] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and substitutions can be made without departing from the technical principles of the present invention. These improvements and substitutions should also be regarded as the scope of protection of the present invention.

Claims

1. A single atomic layer polaritons structured dual parameter terahertz device, characterized in that: include: Dielectric substrate, metal electrode and structure detection material; There are at least three metal electrodes, and the number of the sequence detection materials is one less than the number of the metal electrodes; The plurality of metal electrodes are arranged in sequence along a first direction on the dielectric substrate; The material of the sequence detection material is a single atomic layer two-dimensional crystal; The sequence structure detection material comprises a plurality of sequence structure strips and connecting parts arranged at both ends of the sequence structure strips, the sequence structure strips are formed by sequentially connecting a plurality of sequence structure elements of the same shape, and the plurality of sequence structure strips are sequentially distributed along the second direction on the dielectric substrate; The shapes of the sequence elements of each of the sequence detection materials are different; The connection parts of each of the sequence structure detection materials disposed at both ends of the sequence structure strip are respectively connected to two adjacent metal electrodes in the first direction; Wherein, the first direction and the second direction are perpendicular to each other.

2. The single atomic layer polaritons structured dual parameter terahertz device according to claim 1, characterized in that: There are three metal electrodes, namely a first metal electrode, a second metal electrode and a third metal electrode, and the first metal electrode, the second metal electrode and the third metal electrode are arranged in sequence along a first direction on the dielectric substrate; The sequence structure detection material is provided with two, namely a first sequence structure detection material and a second sequence structure detection material, the shape of the sequence structure element of the first sequence structure detection material is circular, the shape of the sequence structure element of the second sequence structure detection material is rectangular, and the resonance frequency of the sequence structure element of the first sequence structure detection material and the sequence structure element of the second sequence structure detection material are the same; The connecting parts at both ends of the first sequence detection material are respectively connected to the first metal electrode and the second metal electrode in the first direction, and the connecting parts at both ends of the second sequence detection material are respectively connected to the second metal electrode and the third metal electrode in the first direction.

3. The single atomic layer polaritons structured dual parameter terahertz device according to claim 2, characterized in that: The duty ratio of the first sequence detection material and the second sequence detection material is 1:

1.

4. The single atomic layer polaritons structured dual parameter terahertz device according to claim 1, characterized in that: The shape of the sequence-building units of the plurality of sequence-building detection materials is a circle with different diameters, and the resonance frequency of each sequence-building unit of the sequence-building detection material is different.

5. The single atomic layer polaritons structured dual parameter terahertz device according to claim 1, characterized in that: The structure detection material is prepared from a single atomic layer two-dimensional crystal by micro-nano processing technology.

6. The single atomic layer polaritons structured dual parameter terahertz device according to claim 1, characterized in that: The dielectric substrate is any one of a sapphire substrate, a quartz substrate and an intrinsic silicon substrate containing silicon oxide.

7. A method for preparing a single atomic layer polariton-ordered dual-parameter terahertz device based on any one of claims 1 to 6, characterized in that: The following steps are involved: S1: forming a metal electrode film on a dielectric substrate, and then using a lift-off process to manufacture a plurality of metal electrodes arranged in sequence along a first direction; S2: separating a plurality of single-atomic-layer two-dimensional crystals of single-atomic-layer two-dimensional materials from the material substrate, transferring the plurality of single-atomic-layer two-dimensional crystals to the dielectric substrate, and connecting two adjacent metal electrodes at both ends of each single-atomic-layer two-dimensional crystal in a first direction; S3: Using micro-nano processing technology to process the single atomic layer two-dimensional crystal to form a structure detection material.

8. The preparation method according to claim 7, characterized in that: S2 specifically includes: S21: spin coating a polystyrene film on the surface of a plurality of single atomic layer two-dimensional materials, and bonding the single atomic layer two-dimensional crystals of the single atomic layer two-dimensional materials to the polystyrene film, thereby separating the single atomic layer two-dimensional crystals 8 from the material substrate; S22: Use a high molecular polymer PDMS film to bond a polystyrene film to form a composition, and then use a transfer device to transfer the composition to the dielectric substrate, remove the high molecular polymer PDMS film and the polystyrene film, and leave the plurality of single atomic layer two-dimensional crystals on the dielectric substrate coated with metal electrodes, and the two ends of each single atomic layer two-dimensional crystal are respectively connected to two adjacent metal electrodes in the first direction.

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