A debinding process for high thermal conductivity silicon nitride substrate
Through the gradient heating and glue discharge process and ultra-high temperature treatment, combined with protective gas treatment, the thermal conductivity and cost of silicon nitride substrates are solved, and higher thermal conductivity and mechanical properties are achieved.
CN119775029APending Publication Date: 2025-04-08YANGZHOU XIAOTIAN PHOTOSKOT TECHNOLOGY CO LTD
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Patent Information
- Application Number
- CN202411850184.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-16
- Publication Date
- 2025-04-08
AI Technical Summary
Technical Problem
The existing silicon nitride preparation methods have problems with high preparation cost and thermal conductivity affected by oxygen content, and the impact of the glue discharge process on thermal conductivity has not been fully considered.
Method used
The gradient temperature-raising glue discharge process is used to combine ultra-high temperature treatment and temperature-controlled and cooling treatment. By vacuuming and filling protective gas, the thermal conductivity of the silicon nitride substrate is improved.
Benefits of technology
The content of oxygen atoms and carbon atoms in the silicon nitride substrate is effectively reduced, its thermal conductivity and bending strength are improved, and thermal conductivity and mechanical properties are improved.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention relates to the technical field of silicon nitride material preparation, and in particular to a high thermal conductivity silicon nitride substrate debinding process. The invention comprises the following steps: firstly performing gradient heating debinding after vacuuming a debinding furnace, then charging a protective gas into the debinding furnace to make the pressure in the furnace reach 0.07-0.1Mpa, then sequentially performing ultra-high temperature treatment and temperature control and cooling treatment, and finally cooling the furnace to room temperature to obtain a silicon nitride green sheet; the gradient heating debinding comprises firstly heating the temperature to 150-200°C at 1-3°C / min and keeping the temperature for 0.5-1h, then heating the temperature to 300-350°C / min at 1-3°C / min and keeping the temperature for 1-2h, and finally heating the temperature to 550-600°C at 2-5°C / min and keeping the temperature for 1-2h; the ultra-high temperature treatment comprises heating the temperature to 1100-1150°C at 4-6°C / min and keeping the temperature for 2-6h; and the temperature control and cooling treatment comprises cooling the temperature to 150-200°C at 2-5°C / min. The present invention reduces the carbon atomic percentage of the silicon nitride green sheet to the greatest extent through the debinding process, thereby further improving the thermal conductivity of the silicon nitride substrate.
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