Radio frequency switch chip, radio frequency switch circuit and radio frequency front-end module

Abstract

According to the radio frequency switch chip, the radio frequency switch circuit and the radio frequency front-end module provided by the embodiment of the invention, the isolation unit is connected between the first antenna port and the ground, and the isolation unit and the third switch are respectively grounded through two different bonding pads on the chip; the isolation unit can prevent signals on other radio frequency paths from leaking to the first radio frequency emission path when the first radio frequency emission path is in a turn-off state, so as to improve the isolation of the radio frequency switch chip. And the equivalent inductance of the first bonding pad and the second bonding pad can counteract or reduce the equivalent parasitic impedance and parasitic inductance when the isolation unit and the third switch are connected to the ground on the substrate, so that the loss of the radio frequency switch chip can be reduced, and high isolation and low loss of the radio frequency switch chip can be realized.

Description

Technical Field

[0001] The present invention relates to the field of radio frequency technology, and in particular to a radio frequency switch chip, a radio frequency switch circuit and a radio frequency front-end module. Background Art

[0002] Wireless communication is an indispensable part of modern life and plays an extremely important role in various fields. With the continuous development of wireless communication technology, higher and higher requirements are placed on the performance of RF front-end modules. As a key module of the entire RF front-end module, the insertion loss, isolation and linearity of the RF switch will affect the overall performance of the RF front-end module. Summary of the invention

[0003] The object of the present invention is to provide a radio frequency switch chip, a radio frequency switch circuit and a radio frequency front-end module, which can improve the problem of poor isolation of the radio frequency switch chip.

[0004] A radio frequency switch chip comprises a chip, a first radio frequency transmission path and an isolation unit arranged on the chip, wherein the first radio frequency transmission path comprises a series path connected between a first terminal and a second terminal, the first terminal is configured to be connected to a first signal transmission port, the second terminal is configured to be connected to a first antenna port, and the series path comprises a first switch; the first radio frequency transmission path also comprises a third switch, the first end of the third switch is connected to any node on the series path, the second end of the third switch is connected to a first pad, and the first pad is configured to be grounded; the first end of the isolation unit is configured to be connected to the first antenna port, the second end of the isolation unit is connected to the second pad, and the second pad is configured to be grounded.

[0005] A radio frequency switch chip comprises a chip, a first radio frequency transmission path and an isolation switch arranged on the chip, wherein the first radio frequency transmission path comprises a series path connected between a first terminal and a second terminal, the first terminal is configured to be connected to a first signal transmission port, the second terminal is configured to be connected to a first antenna port, and the series path comprises a first switch; the first radio frequency transmission path further comprises a third switch, the first end of the third switch is connected to any node on the series path, the second end of the third switch is grounded, the first end of the isolation switch is configured to be connected to the first antenna port, the second end of the isolation switch is grounded, the gate width direction of the transistor in the third switch is a first direction, the gate width direction of the isolation switch is a second direction, and the first direction and the second direction intersect.

[0006] A radio frequency switch chip comprises a chip, a first radio frequency transmission path, a second radio frequency transmission path and a first radio frequency receiving path arranged on the chip, wherein the second end of the first radio frequency transmission path and the first end of the first radio frequency receiving path are connected and connected to a first antenna port, the second end of the first radio frequency receiving path is connected to a second signal receiving port, and the second end of the second radio frequency transmission path is connected to a second antenna port; the first radio frequency transmission path comprises a series path connected between a first terminal and a second terminal, the first terminal is configured to be connected to the first signal transmission port, the second terminal is configured to be connected to the first antenna port, and the series path comprises a first switch; the first radio frequency transmission path also comprises a third switch, the first end of the third switch is connected to any node on the series path, the second end of the third switch is connected to a first pad, and the first pad is configured to be grounded; the first end of the isolation unit is configured to be connected to the first antenna port, the second end of the isolation unit is connected to the second pad, and the second pad is configured to be grounded.

[0007] A radio frequency switching circuit, characterized in that it includes a first radio frequency transmission path, an isolation unit, a second radio frequency transmission path and a first radio frequency receiving path, wherein the second end of the first radio frequency transmission path and the first end of the first radio frequency receiving path are connected to a first antenna port, the second end of the first radio frequency receiving path is connected to a second signal receiving port, and the second end of the second radio frequency transmission path is connected to a second antenna port; the first radio frequency transmission path includes a series path connected between a first terminal and a second terminal, the first terminal is configured to be connected to the first signal transmission port, the second terminal is configured to be connected to the first antenna port, and the series path includes a first switch; the first radio frequency transmission path also includes a third switch, the first end of the third switch is connected to any node on the series path, and the second end of the third switch is connected to ground; the first end of the isolation unit is configured to be connected to the first antenna port, and the second end of the isolation unit is connected to ground.

[0008] In this embodiment, a radio frequency switch chip includes a chip, a first radio frequency transmission path and an isolation unit arranged on the chip, the first radio frequency transmission path includes a series path connected between a first terminal and a second terminal, the first terminal is configured to be connected to a first signal transmission port, the second terminal is configured to be connected to a first antenna port, and the series path includes a first switch; the first radio frequency transmission path also includes a third switch, the first end of the third switch is connected to any node on the series path, the second end of the third switch is connected to a first pad, and the first pad is configured to be grounded; the first end of the isolation unit is configured to be connected to the first antenna port, and the isolation The second end of the isolation unit is connected to the second pad, and the second pad is configured to be grounded; in this embodiment, the isolation unit is connected between the first antenna port and the ground, and the isolation unit and the third switch are grounded through two different pads on the chip respectively; the isolation unit can prevent the signals on other RF paths from leaking to the first RF transmission path when the first RF transmission path is in the off state, so as to improve the isolation of the RF switch chip; and the inductance equivalent to the first pad and the second pad can offset or reduce the equivalent parasitic impedance and parasitic inductance of the isolation unit and the third switch when they are connected to the ground on the substrate, thereby reducing the loss of the RF switch chip, so as to achieve high isolation and low loss of the RF switch chip.

[0009] In the present embodiment, a radio frequency switch chip includes a chip, a first radio frequency transmission path and an isolation switch arranged on the chip, wherein the first radio frequency transmission path includes a series path connected between a first terminal and a second terminal, the first terminal is configured to be connected to a first signal transmission port, the second terminal is configured to be connected to a first antenna port, and the series path includes a first switch; the first radio frequency transmission path also includes a third switch, the first end of the third switch is connected to any node on the series path, the second end of the third switch is grounded, the first end of the isolation switch is configured to be connected to the first antenna port, the second end of the isolation switch is grounded, the gate width direction of the transistor in the third switch is a first direction, the gate width direction of the isolation switch is a second direction, and the first direction and the second direction intersect; in the present embodiment, by making the gate width direction of the transistor in the third switch the first direction, the gate width direction of the transistor in the isolation switch the second direction, and the first direction and the second direction intersect; spatial coupling or signal interference between the transistor in the third switch and the transistor in the isolation switch can be avoided, thereby further improving the isolation.

[0010] In this embodiment, a radio frequency switch chip includes a chip, a first radio frequency transmission path, a second radio frequency transmission path, and a first radio frequency receiving path arranged on the chip, the second end of the first radio frequency transmission path and the first end of the first radio frequency receiving path are connected and connected to a first antenna port, the second end of the first radio frequency receiving path is connected to a second signal receiving port, and the second end of the second radio frequency transmission path is connected to a second antenna port; the first radio frequency transmission path includes a series path connected between a first terminal and a second terminal, the first terminal is configured to be connected to the first signal transmission port, the second terminal is configured to be connected to the first antenna port, and the series path includes a first switch; the first radio frequency transmission path also includes a third switch, the first end of the third switch is connected to any node on the series path The first end of the isolation unit is configured to be connected to the first antenna port, and the second end of the isolation unit is connected to the second pad, which is configured to be grounded. In this embodiment, the isolation unit is connected between the first antenna port and the ground, and the isolation unit and the third switch are grounded through two different pads on the chip respectively. The isolation unit can not only reduce the signal interference between the second RF transmission path and the first RF receiving path and improve the isolation, but also the equivalent inductance of the first pad and the second pad can offset or reduce the equivalent parasitic impedance and parasitic inductance of the isolation unit and the third switch when they are connected to the ground on the substrate, thereby achieving high isolation performance while ensuring other performances of the RF switch chip.

[0011] In this embodiment, a radio frequency switch circuit is characterized by comprising a first radio frequency transmission path, an isolation unit, a second radio frequency transmission path and a first radio frequency receiving path, wherein the second end of the first radio frequency transmission path and the first end of the first radio frequency receiving path are connected to a first antenna port, the second end of the first radio frequency receiving path is connected to a second signal receiving port, and the second end of the second radio frequency transmission path is connected to a second antenna port; the first radio frequency transmission path comprises a series path connected between a first terminal and a second terminal, the first terminal is configured to be connected to the first signal transmission port, the second terminal is configured to be connected to the first antenna port, and the series path comprises a first switch; the first radio frequency transmission path further comprises a third switch, the first end of the third switch is connected to any node on the series path, and the second end of the third switch is connected to ground; the first end of the isolation unit is configured to be connected to the first antenna port, and the second end of the isolation unit is connected to ground; in this embodiment, by connecting the isolation unit between the first antenna port and the ground, and the isolation unit and the third switch are grounded through two different pads on the chip respectively, the isolation unit can not only reduce the signal interference between the second radio frequency transmission path and the first radio frequency receiving path, but also achieve high isolation performance under the premise of ensuring other performances of the radio frequency switch chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0013] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0014] Figure 1 A schematic diagram of the structure of the radio frequency switch circuit of the present invention;

[0015] Figure 2 is another structural schematic diagram of the radio frequency switch circuit of the present invention;

[0016] Figure 3 Another structural schematic diagram of the radio frequency switch chip of the present invention;

[0017] Figure 4 Another structural schematic diagram of the radio frequency switch chip of the present invention;

[0018] Figure 5 is another structural schematic diagram of the radio frequency switch circuit of the present invention;

[0019] Figure 6 is another structural schematic diagram of the radio frequency switch circuit of the present invention;

[0020] Figure 7 is another structural schematic diagram of the radio frequency switch circuit of the present invention;

[0021] Figure 8 is another structural schematic diagram of the radio frequency switch circuit of the present invention;

[0022] Fig. 9 is another structural schematic diagram of the radio frequency switch circuit of the present invention;

[0023] Fig.10 is another structural schematic diagram of the radio frequency switch circuit of the present invention;

[0024] Fig.11 Another structural schematic diagram of the radio frequency switch chip of the present invention;

[0025] Fig.12 Another structural schematic diagram of the radio frequency switch chip of the present invention;

[0026] Fig.13 is another structural schematic diagram of the radio frequency switch circuit of the present invention;

[0027] Fig.14 is another structural schematic diagram of the radio frequency switch circuit of the present invention;

[0028] Fig.15 A simulation schematic diagram of the radio frequency switch circuit of the present invention;

[0029] Fig.16 Another simulation schematic diagram of the radio frequency switch chip and the radio frequency switch circuit of the present invention;

[0030] Fig.17 Another simulation schematic diagram of the radio frequency switch chip and the radio frequency switch circuit of the present invention;

[0031] Fig.18 Another simulation schematic diagram of the radio frequency switch chip and the radio frequency switch circuit of the present invention;

[0032] Fig.19 Another simulation schematic diagram of the RF switch chip and RF switch circuit of the present invention DETAILED DESCRIPTION

[0033] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0034] It should be noted that all directional indications in the embodiments of the present invention (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0035] In addition, the descriptions of "first", "second", etc. in the present invention are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0036] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0037] It should be noted that all directional indications in the embodiments of the present invention (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0038] In addition, the descriptions of "first", "second", etc. in the present invention are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0039] The RF switch chip provided in the embodiment of the present application can be applied to mobile phones, tablet computers, wearable devices, vehicle-mounted devices, laptop computers, and other terminal devices, and can also be applied to the RF front-end modules of these terminal devices. This embodiment does not impose any restrictions on the specific type of terminal devices.

[0040] This embodiment provides a radio frequency switch chip, such as Figure 1 and Figure 3 As shown, it includes a chip, a first RF transmission path TX1 and an isolation unit 14 arranged on the chip, the first RF transmission path TX1 includes a series path connected between a first terminal and a second terminal, the first terminal is configured to be connected to a first signal transmission port, the second terminal is configured to be connected to a first antenna port ANT1, and the series path includes a first switch S11; the first RF transmission path also includes a third switch S13, the first end of the third switch S13 is connected to any node on the series path, the second end of the third switch S13 is connected to a first pad GND1, and the first pad GND1 is configured to be grounded; the first end of the isolation unit 14 is configured to be connected to the first antenna port, the second end of the isolation unit 14 is connected to a second pad GND2, and the second pad GND2 is configured to be grounded.

[0041] In at least one embodiment, the RF switch chip can be a chip of any process type, such as silicon-on-insulator (SOI) process, CMOS process, etc. The first RF transmission path TX1 is configured to transmit the RF signal received from the first signal transmission port to the first antenna port in the on state to achieve the transmission of the RF signal. The first RF transmission path TX1 includes a first switch S11 on a series path; the first switch S11 can use a switching device with a large gate voltage range, such as a high electron mobility transistor (HEMT) or a metal oxide semiconductor field effect transistor (MOSFET). It should be noted that the series path of the first RF transmission path TX1 includes but is not limited to the first switch S11, and the series path of the first RF transmission path TX1 may include one or more switches; the on and off of the first RF transmission path TX1 is achieved by controlling the on and off of the switch on the series path.

[0042] In at least one embodiment, the first RF transmission path TX1 further includes a third switch S13 connected to the ground on a parallel path, and the third switch S13 may use a switch device of the same type as the first switch S11. It should be noted that there may be one or more parallel paths connected to the ground on the first RF transmission path TX1. The switch connected to the ground on the parallel path of the first RF transmission path TX1 includes but is not limited to the third switch S13. The first end of the third switch S13 may be connected to any node on the series path, for example: the first end of the third switch S13 may be connected to the first end of the first switch S11, or may be connected to the second end of the first switch S11. The second end of the third switch S13 is connected to the first pad GND1, and the first pad GND1 is configured to be grounded. It can be understood that when the first switch S11 is configured to be in the on state, the third switch S13 is turned off to avoid leakage of the RF signal transmitted on the first RF transmission path TX1. When the first switch S11 is configured to be in the off state, the third switch S13 is turned on to prevent signals on other RF paths from leaking to the first RF transmission path TX1 and / or the first antenna port, thereby improving the isolation of the RF switch chip. However, in some application scenarios with high isolation requirements, the third switch S13 on the parallel path alone often cannot meet actual needs.

[0043] In view of this, this embodiment connects an isolation unit between the first antenna port and the ground on the basis of the first RF transmission path TX1, wherein the first end of the isolation unit is configured to be connected to the first antenna port, and the second end of the isolation unit is connected to the second pad, and the second pad is configured to be grounded; by connecting the isolation unit between the first antenna port and the ground, the isolation unit can also prevent the leakage of signals on other RF paths to the first RF transmission path TX1 when the first RF transmission path TX1 is in the off state without affecting the normal signal transmission of the first RF transmission path TX1, thereby improving the isolation of the RF switch chip. Furthermore, the isolation unit and the third switch in this embodiment are grounded through two different pads on the chip, respectively, so the equivalent inductance of the first pad and the second pad can offset or reduce the equivalent parasitic impedance and parasitic inductance of the isolation unit and the third switch when they are connected to the ground on the substrate, thereby reducing the loss of the RF switch chip, so as to achieve high isolation and low loss of the RF switch chip.

[0044] In at least one embodiment, the isolation unit may be at least one of a switch device, an inductor device, or a capacitor device, or a series-parallel combination thereof. It should be noted that when the isolation unit includes a switch device, the state of the isolation unit is consistent with the state of the third switch. When the third switch is in the on state, the switch device in the isolation unit is also in the on state. Conversely, when the third switch is in the off state, the switch device in the isolation unit is also in the off state.

[0045] In at least one embodiment, the first pad and the second pad may be spaced apart or adjacent to each other. This embodiment does not specifically limit the positional relationship between the first pad and the second pad.

[0046] In this embodiment, a radio frequency switch chip includes a chip, a first radio frequency transmission path and an isolation unit arranged on the chip, the first radio frequency transmission path includes a series path connected between a first terminal and a second terminal, the first terminal is configured to be connected to a first signal transmission port, the second terminal is configured to be connected to a first antenna port, and the series path includes a first switch; the first radio frequency transmission path also includes a third switch, the first end of the third switch is connected to any node on the series path, the second end of the third switch is connected to a first pad, and the first pad is configured to be grounded; the first end of the isolation unit is configured to be connected to the first antenna port, the second end of the isolation unit is connected to the second pad, and the second pad is configured to be grounded; in this embodiment, based on the first radio frequency transmission path TX1, An isolation unit is connected between the first antenna port and the ground, the first end of the isolation unit is configured to be connected to the first antenna port, the second end of the isolation unit is connected to the second pad, and the second pad is configured to be grounded. In this embodiment, the isolation unit is connected between the first antenna port and the ground, and the isolation unit and the third switch are grounded through two different pads on the chip respectively; the isolation unit can prevent the signals on other RF paths from leaking to the first RF transmission path TX1 when the first RF transmission path TX1 is in the off state, so as to improve the isolation of the RF switch chip; and the equivalent inductance of the first pad and the second pad can offset or reduce the equivalent parasitic impedance and parasitic inductance of the isolation unit and the third switch when they are connected to the ground on the substrate, thereby reducing the loss of the RF switch chip, so as to achieve high isolation and low loss of the RF switch chip.

[0047] In a specific embodiment, if Figure 4 As shown, the RF switch chip also includes a metal trace 101, a first end of the metal trace 101 is connected to the first pad, a second end of the metal trace is connected to the second pad, and an equivalent inductance of the metal trace is in the range of (0,300pH].

[0048] In this embodiment, a metal trace 101 is connected between the first pad and the second pad, and the equivalent inductance of the metal trace is in the range of (0,300pH]. The metal trace offsets or reduces the equivalent parasitic impedance and parasitic inductance of the isolation unit and the third switch when they are connected to the ground on the substrate. This reduces the loss of the RF switch chip, so as to achieve high isolation and low loss of the RF switch chip.

[0049] It should be noted that the equivalent inductance of the metal routing needs to be less than 300pH. The smaller the equivalent inductance of the metal routing is, the better the effect of offsetting or reducing the equivalent parasitic impedance and parasitic inductance of the isolation unit and the third switch when they are connected to the ground on the substrate. For example: the equivalent inductance of the metal routing is in any at least one range of (0-100pH], (10pH-100pH], (10pH-150pH], (100pH-150pH], (150pH-300pH], etc.

[0050] In a specific embodiment, if Figure 2 and Figure 3 As shown, the series path also includes a second switch S12, the first end of the first switch S11 is connected to the first terminal, the second end of the first switch S11 is connected to the first end of the second switch S12, the second end of the second switch S12 is connected to the second terminal, and the first end of the third switch is connected to the first end of the second switch S12.

[0051] In at least one embodiment, the series path includes a first switch S11 and a second switch S12 connected in series, a first end of the third switch S13 is connected to the connection path of the first switch S11 and the second switch S12, a second end of the third switch S13 is grounded, a first end of the isolation unit is connected to the connection path of the second switch S12 and the second terminal, and the second terminal is configured to be connected to the first antenna port, thereby greatly improving the isolation of the RF switch chip and improving the voltage resistance performance of the first RF transmission path TX1.

[0052] In a specific embodiment, the first pad GND1 and the second pad GND2 are spaced apart on the chip. In this embodiment, by arranging the first pad GND1 and the second pad GND2 on the chip at intervals, compared with the manner in which the first pad GND1 and the second pad GND2 are arranged adjacent to each other, interference and leakage between signals caused by the first pad GND1 and the second pad GND2 being too close to each other can be avoided, thereby further improving the isolation of the RF switch chip.

[0053] In a specific embodiment, the distance between the midpoint of the first pad and the midpoint of the second pad is

[0054] For example, the distance between the midpoint of the first pad and the midpoint of the second pad is within any at least one of the ranges of [10um, 100um], [100um, 300um], [300um, 600um], [600um, 900um], and [900um, 1200um].

[0055] In at least one embodiment, by limiting the distance between the midpoint of the first pad and the midpoint of the second pad to be within the range of [10um, 1200um], it is possible to avoid interference and leakage between signals caused by the first pad GND1 and the second pad GND2 being too close to each other, thereby improving the isolation of the RF switch chip; it is also possible to avoid the distance between the midpoint of the first pad and the midpoint of the second pad being too long, thereby affecting the compact layout of components on the chip.

[0056] In a specific embodiment, the isolation unit includes an isolation switch S14. Specifically, a first end of the isolation switch S14 is configured to be connected to the first antenna port, and a second end of the isolation unit is connected to a second pad, and the second pad is configured to be grounded.

[0057] In at least one embodiment, when the switch on the series path of the first RF transmission path TX1 is configured to be in an off state, the third switch S13 and the isolation switch S14 are turned on. Under the joint cooperation of the third switch S13 and the isolation switch S14, it is possible to prevent signals on other RF paths from leaking to the first RF transmission path TX1 and / or the first antenna port. Moreover, since the third switch S13 and the isolation switch S14 are grounded through two different pads respectively, spatial coupling between the isolation switch S14 and the third switch caused by sharing a pad for grounding can also be avoided, thereby further improving the isolation of the RF switch chip, so as to achieve high isolation performance while ensuring other performances of the RF switch chip.

[0058] The isolation unit described in this embodiment includes an isolation switch S14. By connecting the isolation switch between the first antenna port and the ground, the high isolation performance of the RF switch chip can be achieved in a wider frequency band range (for example, in the (0, 6GHz] frequency band range). As an example: by connecting the isolation switch between the first antenna port and the ground, the high isolation performance of the RF switch chip can be ensured in a wide frequency band range such as low frequency, medium frequency, high frequency, n77 frequency band, n79 frequency band and even WiFi frequency band.

[0059] In a specific embodiment, the area of ​​the isolation switch S14 is smaller than the area of ​​the third switch S13.

[0060] In at least one embodiment, the isolation switch S14 is composed of a plurality of first transistors (e.g., field effect transistors), and the isolation switch S14 is composed of a plurality of second transistors (e.g., field effect transistors). When the first transistors and the second transistors have the same area, the number of the first transistors can be made smaller than the number of the second transistors to satisfy that the area of ​​the isolation switch S14 is smaller than the area of ​​the third switch S13. Alternatively, when the number of the first transistors and the second transistors is the same, the area of ​​the first transistor can be made smaller than the area of ​​the second transistor to satisfy that the area of ​​the isolation switch S14 is smaller than the area of ​​the third switch S13.

[0061] In this embodiment, the area of ​​the isolation switch S14 is smaller than the area of ​​the third switch S13, so that the chip area can be saved while ensuring the high isolation performance of the RF switch chip.

[0062] In at least one embodiment, the area of ​​the isolation switch S14 and the area of ​​the third switch S13 can be obtained by using circuit simulation design software (eg, cadence).

[0063] In a specific embodiment, if Figure 5 and Figure 6 As shown, the isolation unit includes a first capacitor C1 and a first inductor L1, the first capacitor C1 and the first inductor L1 are connected in series, or the first capacitor C1 and the first inductor L1 are connected in parallel.

[0064] In at least one embodiment, the first capacitor C1 and the first inductor L1 have different values ​​for different operating frequency bands. In this embodiment, by using the first capacitor C1 and the first inductor L1, and in different operating frequency bands, the first capacitor C1 and the first inductor L1 are reasonably valued, when the first RF transmission path TX1 is in the off state, under the joint action of the first capacitor C1 and the first inductor L1, the harmonic signals leaked from other RF paths to the first RF transmission path TX1 can be filtered out, thereby improving the isolation of the RF switch chip.

[0065] In at least one embodiment, the first inductor may be a winding inductor or an SMD inductor. The first capacitor may be a MOS capacitor, a MIM capacitor, or an SMD capacitor. This embodiment does not specifically limit the implementation of the first inductor and the first capacitor.

[0066] In a specific embodiment, the gate width direction of the transistor in the third switch is a first direction, the gate width direction of the transistor in the isolation switch is a second direction, and the first direction and the second direction intersect.

[0067] In at least one embodiment, Figure 3 As shown, the gate width direction of the transistor in the third switch S13 is the first direction D1, and the gate width direction of the transistor in the isolation switch is the second direction D2; the first direction D1 and the second direction D2 intersect. As an example, the intersection angle of the first direction D1 and the second direction D2 is

[0068] At least one angle range such as [30°, 60°], [60°, 90°], [45°, 100°], [90°, 120°], and [120°, 150°].

[0069] In at least one example, when the gate width direction of the transistor in the third switch is parallel to the gate width direction of the transistor in the isolation switch, the third switch and the isolation switch are prone to spatial coupling, resulting in signal interference. In view of this, in this embodiment, by making the gate width direction of the transistor in the third switch a first direction, and the gate width direction of the transistor in the isolation switch a second direction, and the first direction and the second direction intersect, signal interference between the third switch and the isolation switch due to spatial coupling can be avoided, thereby improving isolation in a compact area.

[0070] In a specific embodiment, the intersection angle of the first direction and the second direction is in the range of [60°, 120°]. As an example, the intersection angle of the first direction D1 and the second direction D2 is in the range of [60°, 80°],

[0071] At least one angle range is [80°, 100°], [100°, 120°], etc.

[0072] In at least one embodiment, the closer the intersection angle of the first direction and the second direction is to 90°, the smaller the probability of spatial coupling between the isolation switch and the third switch, and the better the isolation between the two.

[0073] In a specific embodiment, the first direction is a horizontal direction, and the second direction is a vertical direction, or the second direction is a horizontal direction, and the first direction is a vertical direction. That is, the intersection angle of the first direction and the second direction is 90°. It should be noted that the intersection angle of the first direction and the second direction in this embodiment is 90°, and a certain error is allowed. As long as the error is within plus or minus 10°, it can be understood that the intersection angle of the first direction and the second direction is 90°.

[0074] In this embodiment, by making the gate width direction of the transistor in the third switch the first direction, the gate width direction of the transistor in the isolation switch the second direction, and the intersection angle of the first direction and the second direction close to 90°; it can be achieved that when the spatial distance between the third switch and the isolation switch is small, the signal interference caused by spatial coupling can be reduced to a certain extent, which can not only improve the isolation but also achieve a compact layout of the chip.

[0075] In at least one embodiment, the horizontal direction is the length direction of the chip, and the vertical direction is the width direction of the chip.

[0076] In a specific embodiment, the gate width direction of the transistor in the third switch and the gate width direction of the transistor in the isolation switch are in the same direction, and the minimum distance between the third switch and the isolation switch is in the range of [15um, 70um].

[0077] In at least one embodiment, the gate width direction of the transistor in the third switch is horizontal, the gate width direction of the transistor in the isolation switch is also horizontal, and the minimum spacing between the third switch and the isolation switch is in the range of [15um, 70um]. For example, the minimum spacing between the third switch and the isolation switch is in at least one range of [15um, 30um], [30um, 45um], [45um, 60um], [60um, 75um], etc.

[0078] In at least one embodiment, the gate width direction of the transistor in the third switch is vertical, the gate width direction of the transistor in the isolation switch is also vertical, and the minimum spacing between the third switch and the isolation switch is in the range of [15um, 70um]. For example, the minimum spacing between the third switch and the isolation switch is in at least one range of [15um, 30um], [30um, 45um], [45um, 60um], [60um, 75um], etc.

[0079] In this embodiment, when the gate width direction of the transistor in the third switch and the gate width direction of the transistor in the isolation switch are in the same direction, in order to avoid signal interference caused by spatial coupling between the third switch and the isolation switch, by limiting the minimum spacing between the third switch and the isolation switch to within the range of [15um, 70um], the phenomenon of signal interference caused by spatial coupling between the third switch and the isolation switch can be reduced to a certain extent, thereby improving the isolation.

[0080] In a specific embodiment, as follows Figure 3 As shown, the gate width direction of the transistor in the first switch is the first direction, the gate width direction of the transistor in the second switch is the first direction, and the first switch and the second switch are arranged at intervals along the second direction.

[0081] In at least one embodiment, the gate width direction of the transistor in the first switch S11 is the first direction, the first end of the first switch S11 extends along the first direction to the second end, the second end of the first switch S11 is connected to the first end of the second switch S12, and the gate width direction of the transistor in the second switch is also the first direction. The first end of the second switch extends along the second direction to the second end; so that the direction of the RF signal transmitted in the first switch is consistent with the direction of the RF signal transmitted in the second switch, avoiding the phenomenon of mutual cancellation of signals due to the opposite direction of the RF signal transmitted in the first switch and the RF signal transmitted in the second switch, thereby improving the signal transmission efficiency. Furthermore, the first switch and the second switch are arranged in sequence along the second direction; so as to achieve a compact layout of the first switch and the second switch on the substrate while ensuring the signal transmission efficiency.

[0082] In at least one embodiment, the gate width of the transistor in the first switch S11 is the same as the gate width of the transistor in the second switch S12, so that the withstand voltages of different switches on the series path remain consistent.

[0083] In a specific embodiment, as follows Figure 3 As shown, the first switch S11 and the third switch S13 are spaced apart along the first direction, the first pad GND1 is arranged on a side of the third switch S13 away from the first switch, and the first terminal is on a side of the first switch S11 away from the third switch.

[0084] In at least one embodiment, the first end of the third switch S13 is configured to be connected to the second end of the first switch S11, the first end of the first switch S11 is configured to be connected to the first terminal, and the second end of the third switch S13 is configured to be grounded through the first pad GND1. In this embodiment, the first switch S11 and the third switch S13 are arranged at intervals along the first direction, the first pad GND1 is arranged on a side of the third switch S13 away from the first switch, and the first terminal is on a side of the first switch S11 away from the third switch. The first switch S11 and the third switch S13 can be connected to each other without an additional lead, thereby realizing a compact layout of the first switch S11 and the third switch S13 on the substrate.

[0085] In a specific embodiment, the second switch S12 and the isolation switch S14 are spaced apart along the first direction, the second terminal is arranged on a side of the second switch away from the first switch, and the second pad GND2 is arranged on a side of the isolation switch S14 away from the second terminal.

[0086] In at least one embodiment, the first end of the isolation switch S14 is configured to be connected to the second end of the second switch S12, and the second end of the isolation switch S14 is configured to be grounded through the second pad GND2. In this embodiment, the second switch S12 and the isolation switch S14 are arranged at intervals along the first direction, the second terminal is arranged on a side of the second switch away from the first switch, and the second pad GND2 is arranged on a side of the isolation switch S14 away from the second terminal; thereby, a compact layout of the second switch S12 and the isolation switch S14 on the substrate can be achieved, and the gate width direction of the isolation switch S14 is prevented from being consistent with the gate width direction of the third switch S13, thereby improving the isolation of the RF switch chip.

[0087] In a specific embodiment, the second pad GND2 is disposed between the third switch and the isolation switch.

[0088] In at least one embodiment, the gate width direction of the third switch S13 is a first direction, the gate width direction of the isolation switch is a second direction, the first direction and the second direction intersect, and by setting the second pad GND2 between the third switch and the isolation switch, the second pad GND2 can also block the spatial coupling or signal interference between the third switch and the isolation switch to a certain extent; thereby, the spatial coupling or signal interference between the third switch and the isolation switch can be avoided to a greater extent, thereby further improving the isolation.

[0089] In a specific embodiment, when the first switch S11 and the second switch S12 are configured to be in the on state, the third switch S13 and the isolating switch S14 are configured to be in the off state; when the first switch S11 and the second switch S12 are configured to be in the off state, the third switch S13 and the isolating switch S14 are configured to be in the on state.

[0090] In at least one embodiment, when the first RF transmission path is configured to transmit the RF signal received from the first signal transmission port to the first antenna port, the first switch S11 and the second switch S12 on the series path of the first RF transmission path are turned on, and the third switch S13 and the isolation switch S14 are turned off; thereby ensuring the normal transmission of the RF signal. When other RF paths on the RF switch chip are working to transmit signals and the first RF transmission path is not working, in order to avoid leakage of RF signals on other RF paths in working state, by making the first switch S11 and the second switch S12 in the off state, and the third switch S13 and the isolation switch S14 in the on state; it can effectively avoid leakage of signals on other RF paths in working state, and ensure the isolation between different RF paths.

[0091] In a specific embodiment, if Figures 7 to 9 As shown, the RF switch chip also includes a first RF receiving path RX1 arranged on the chip, the first RF transmitting path TX1 and the first RF receiving path RX1 are both connected to the first antenna port ANT1, the first RF receiving path RX1 includes a fifth switch S21 and a sixth switch S22, the first end of the fifth switch S21 is connected to the first antenna port ANT1, the second end of the fifth switch S21 is connected to the first signal receiving port D, the first end of the sixth switch S22 is connected to the second end of the fifth switch S21, and the second end of the sixth switch S22 is grounded through the third pad GND1.

[0092] In at least one embodiment, the first RF transmission path TX1 is used to transmit an RF signal of a specific frequency band to the first antenna port ANT1. The first RF reception path TR1 is used to receive an RF signal of a specific frequency band from the first antenna port ANT1. The first RF transmission path TX1 and the first RF reception path TR1 are both connected to the first antenna port ANT1. The frequency bands of the RF signals transmitted by the first RF transmission path TX1 and the first RF reception path TR1 may be the same or different.

[0093] As an example, the frequency band of the RF signal transmitted by the first RF transmission path TX1 is the same as the frequency band of the RF signal transmitted by the first RF reception path TR1. For example, the first RF transmission path TX1 and the first RF reception path TR1 are both used to transmit RF signals in the B41 frequency band.

[0094] In at least one embodiment, when the first RF transmission path TX1 is used to transmit an RF signal of a specific frequency band to the first antenna port ANT1, the first RF reception path RX1 does not work, the fifth switch S21 on the first RF reception path RX1 is in an off state, and the sixth switch S22 is closed, thereby preventing the RF signal on the first RF transmission path TX1 from leaking to the first signal receiving port D through the first RF reception path RX1.

[0095] In at least one embodiment, when the first RF receiving path RX1 receives an RF signal of a specific frequency band from the first antenna port ANT1, the first RF transmitting path TX1 does not work, the first switch S11 and the second switch S12 on the first RF transmitting path TX1 are in an off state, and the third switch S13 and the isolation switch S14 are closed, thereby preventing the RF signal on the first RF receiving path RX1 from leaking to the first signal transmitting port A through the first RF transmitting path TX1.

[0096] In at least one embodiment, the fifth switch S21 and the sixth switch S22 may also use switch devices with a larger gate voltage range, such as a high electron mobility transistor (HEMT) or a metal oxide semiconductor field effect transistor (MOSFET). This embodiment does not specifically limit the types of the fifth switch S21 and the sixth switch S22. It should be noted that the series path of the first RF receiving path RX1 includes but is not limited to the fifth switch S21, and the series path of the first RF transmitting path TX1 may include one or more switches. There may be one or more parallel paths connected to the ground on the first RF receiving path RX1, and the switches connected to the ground on the parallel path of the first RF receiving path RX1 include but are not limited to the sixth switch S22.

[0097] In a specific embodiment, if Fig.10As shown, the gate width direction of the fifth switch S21 and the gate width direction of the transistor S22 in the sixth switch are the second direction; the fifth switch S21 and the sixth switch S22 are arranged on the side of the isolation switch S14 away from the second switch S12, the fifth switch S21 and the sixth switch S22 are arranged at intervals along the second direction, the first signal receiving port C is arranged between the fifth switch S21 and the sixth switch S22, and the third pad GND3 is arranged on the side of the sixth switch S22 away from the fifth switch S21.

[0098] In at least one embodiment, the gate width direction of the fifth switch S21 on the first RF receiving path RX1 and the gate width direction of the transistor S22 in the sixth switch are the second direction, and the gate width direction of the first switch S11, the gate width direction of the second switch S12, and the gate width direction of the third switch S13 on the first RF transmitting path TX1 are the first direction. As an example, the first direction is a horizontal direction, and the second direction is a vertical direction. In this embodiment, by making the gate width direction of the switch on the first RF receiving path RX1 non-parallel to the gate width direction of the switch on the first RF transmitting path TX1, preferably, the gate width direction of the switch on the first RF receiving path RX1 is perpendicular to the gate width direction of the switch on the first RF transmitting path TX1, so as to avoid spatial coupling between the switch on the first RF receiving path RX1 and the switch on the first RF transmitting path TX1, thereby improving the isolation between the first RF receiving path RX1 and the first RF transmitting path TX1.

[0099] In at least one embodiment, the first signal receiving port C is arranged between the fifth switch S21 and the sixth switch S22, and the third pad GND3 is arranged on a side of the sixth switch S22 away from the fifth switch S21, so that the fifth switch S21 and the sixth switch S22 can be connected without additional wiring, thereby realizing a compact layout of the chip.

[0100] In a specific embodiment, if Figures 7 to 9 As shown, the RF switch chip also includes a second RF transmission path TX2 arranged on the chip, and the second RF transmission path TX2 includes a seventh switch S31 and an eighth switch S32, the first end of the seventh switch S31 is connected to the first signal transmission port A, the second end of the seventh switch S31 is connected to the second antenna port ANT2, the first end of the eighth switch S32 is connected to the first end of the seventh switch S31, and the second end of the eighth switch S32 is grounded.

[0101] In at least one embodiment, the first RF transmission path TX1 and the second RF transmission path TX2 are configured to transmit RF signals of different frequency bands. For example, the first RF transmission path TX1 is configured to transmit RF signals of a first frequency band (e.g., N41 frequency band), and the second RF transmission path TX2 is configured to transmit RF signals of a second frequency band (e.g., N77 frequency band).

[0102] In at least one embodiment, Figure 7 As shown, both the first RF transmission path TX1 and the second RF transmission path TX2 are connected to the first signal transmission port A. Therefore, when the first RF transmission path TX1 is configured to transmit an RF signal of a first frequency band (e.g., N41 frequency band), the switch on the series path of the first RF transmission path TX1 is turned on, the switch on the parallel path of the first RF transmission path TX1 connected in parallel to the ground is turned off, the switch on the series path of the second RF transmission path TX2 is turned off, and the switch on the parallel path of the second RF transmission path TX2 connected in parallel to the ground is turned on, thereby preventing the RF signal transmitted on the first RF transmission path TX1 from leaking to the second RF transmission path TX2.

[0103] In at least one embodiment, when the second RF transmission path TX2 is configured to transmit an RF signal of a second frequency band (for example, the N77 frequency band), the seventh switch on the series path of the second RF transmission path TX1 is turned on, the eighth switch on the parallel path of the first RF transmission path TX1 connected in parallel to the ground is turned off, the switch on the series path of the first RF transmission path TX1 is turned off, and the switch on the parallel path of the first RF transmission path TX1 connected in parallel to the ground is turned on, thereby preventing the RF signal transmitted on the second RF transmission path TX2 from leaking to the first RF transmission path TX1.

[0104] In at least one embodiment, Figure 8As shown, the first RF transmission path TX1 and the second RF transmission path TX2 are respectively connected to the second signal transmission port A1 and the third signal transmission port A2 of the RF switching switch 200, that is, the first RF transmission path TX1 and the second RF transmission path TX2 are respectively connected to different signal transmission ports of the same RF switching switch 200. Since the second signal transmission port A1 and the third signal transmission port A2 are two signal transmission ports integrated in the same RF switching switch 200, when the first RF transmission path TX1 is configured to transmit an RF signal of a first frequency band (for example, an N41 frequency band), the switch on the series path of the first RF transmission path TX1 is turned on, the switch on the parallel path of the first RF transmission path TX1 connected in parallel to the ground is turned off, the switch on the series path of the second RF transmission path TX2 is turned off, and the switch on the parallel path of the second RF transmission path TX2 connected in parallel to the ground is turned on, thereby preventing the RF signal transmitted on the first RF transmission path TX1 from leaking to the second RF transmission path TX2 through the RF switching switch 200.

[0105] In at least one embodiment, when the second RF transmission path TX2 is configured to transmit an RF signal of a second frequency band (for example, the N77 frequency band), the seventh switch on the series path of the second RF transmission path TX1 is turned on, the eighth switch on the parallel path of the first RF transmission path TX1 connected in parallel to the ground is turned off, the switch on the series path of the first RF transmission path TX1 is turned off, and the switch on the parallel path of the first RF transmission path TX1 connected in parallel to the ground is turned on, thereby preventing the RF signal transmitted on the second RF transmission path TX2 from leaking to the first RF transmission path TX1 through the RF switching switch 200.

[0106] In at least one embodiment, the seventh switch S31 and the eighth switch S32 may also use switch devices with a larger gate voltage range, such as a high electron mobility transistor (HEMT) or a metal oxide semiconductor field effect transistor (MOSFET). This embodiment does not specifically limit the types of the seventh switch S31 and the eighth switch S32. It should be noted that the series path of the second RF transmission path TX2 includes but is not limited to the seventh switch S31, and the series path of the second RF transmission path TX2 may include one or more switches. There may be one or more parallel paths connected to the ground on the second RF transmission path TX2, and the switches connected to the ground on the parallel path of the second RF transmission path TX2 include but are not limited to the eighth switch S32.

[0107] In a specific embodiment, if Fig.11As shown, the seventh switch S31 and the eighth switch S32 are arranged on a side of the first switch S11 away from the second switch S12, and the seventh switch S31 and the eighth switch S32 are arranged at intervals along the first direction D1; the gate width direction of the transistor in the seventh switch S31 and the gate width direction of the transistor in the eighth switch S32 are the first direction; the second antenna port is arranged between the seventh switch and the eighth switch, and the eighth switch is grounded through a fourth pad, and the fourth pad is arranged on a side of the eighth switch away from the seventh switch.

[0108] In at least one embodiment, Fig.11 As shown, the seventh switch S31 and the eighth switch S32 are arranged on a side of the first switch away from the second switch, and the seventh switch and the eighth switch are arranged at intervals along the first direction; the gate width direction of the seventh switch S31 and the gate width direction of the eighth switch S32 are the first direction. The eighth switch S32 is grounded through the fourth pad GND4. The second antenna port ANT2 is arranged between the seventh switch S31 and the eighth switch S32, and the fourth pad GND4 is arranged on a side of the eighth switch S32 away from the seventh switch S31. Thereby, the seventh switch S31 and the eighth switch S32 can be connected without additional wiring, thereby realizing a compact layout of the chip.

[0109] In a specific embodiment, the first RF transmission path is configured to transmit an RF signal of a first frequency band to the first antenna port, the second RF transmission path is configured to transmit an RF signal of a second frequency band to the second antenna port, and the first RF reception path is configured to receive an RF signal of the first frequency band from the first antenna port; when the second RF transmission path and the first RF reception path are configured to be in an on state and the first RF transmission path is configured to be in an off state, the isolation unit is configured to block the RF signal on the second RF transmission path from leaking to the first RF reception path.

[0110] In at least one embodiment, the first RF transmission path and the second RF transmission path have a common node, the first RF transmission port, or are connected to the same RF switching switch 200, and the first RF transmission path and the first RF receiving path have a common node, the first antenna port. Therefore, when the second RF transmission path and the first RF receiving path are configured to be in a conducting state, and the first RF transmission path is configured to be in a shut-down state, the RF transmission signal transmitted from the first RF transmission port is easy to leak to the first RF receiving path through the first RF transmission path, and the RF receiving signal received from the first antenna port is also easy to leak to the second RF transmission path through the first RF transmission path, thereby causing the phenomenon of signal mutual interference between the second RF transmission path and the first RF receiving path in the working state. In view of this, this embodiment connects an isolation unit to the first RF transmission path, and the isolation unit is configured to reduce the signal interference between the second RF transmission path and the first RF receiving path. Specifically, the isolation unit is configured to block the RF signal on the second RF transmission path from leaking to the first RF receiving path, and to block the RF signal on the first RF receiving path from leaking to the second RF transmission path; thereby greatly improving the isolation of the RF switch chip.

[0111] As an example, the isolation unit is connected between the first antenna port and the ground, and the isolation unit may include at least one switch unit.

[0112] In a specific embodiment, when the second RF transmission path and the first RF reception path are configured to be in an on state, the first RF transmission path is configured to be in an off state, and the isolation switch is configured to be in an on state.

[0113] In at least one embodiment, when the second RF transmission path and the first RF receiving path are configured to be in the on state, since the first RF transmission path and the second RF transmission path are both connected to the first RF transmission port or are both connected to the same RF switching switch 200, the signal on the second RF transmission path is easily leaked to the first RF transmission path, thereby affecting the first RF receiving path. And since the first RF transmission path and the first RF receiving path are both connected to the first antenna port, the RF receiving signal received from the first antenna port is also easily leaked to the second RF transmission path through the first RF transmission path, thereby causing the phenomenon of signal mutual interference between the second RF transmission path and the first RF receiving path in the working state.

[0114] In view of this, in this embodiment, an isolating switch is connected to the first RF transmission path, the switches (for example, the first switch and the second switch) on the series path of the first RF transmission path are disconnected, the third switch S13 connected in parallel to the ground is turned on, and the isolating switch is also turned on. Therefore, under the joint action of the first RF transmission path and the isolating switch, the signals between the second RF transmission path and the first RF receiving path in the working state can be avoided from interfering with each other, thereby greatly improving the isolation of the RF switch chip.

[0115] In a specific embodiment, if Fig.12 and Fig.13 As shown, the first signal transmitting port A is configured to be connected to the output end of the power amplifier PA, and the first signal receiving port D is configured to be connected to the input end of the low noise amplifier LNA.

[0116] In at least one embodiment, the first signal transmitting port is configured to transmit the RF signal amplified by the power amplifier PA to the first transmitting path TX1, and transmit it to the first antenna port through the first transmitting path TX1, or the first signal transmitting port is configured to transmit the RF signal amplified by the power amplifier PA to the second transmitting path TX1, and transmit it to the second antenna port through the second transmitting path TX2. The first signal receiving port D is configured to transmit the RF signal received from the first antenna port ANT1 to the low noise amplifier LNA through the first RF receiving path RX1 for amplification processing.

[0117] This embodiment also provides a radio frequency switch chip, including a chip, a first radio frequency transmission path and an isolation switch arranged on the chip, the first radio frequency transmission path including a series path connected between a first terminal and a second terminal, the first terminal being configured to be connected to a first signal transmission port, the second terminal being configured to be connected to a first antenna port, and the series path including a first switch; the first radio frequency transmission path also includes a third switch, the first end of the third switch being connected to any node on the series path, the second end of the third switch being grounded, the first end of the isolation switch being configured to be connected to the first antenna port, the second end of the isolation switch being grounded, the gate width direction of the transistor in the third switch being a first direction, the gate width direction of the isolation switch being a second direction, and the first direction and the second direction intersecting.

[0118] In at least one embodiment, Figure 3As shown, the gate width direction of the transistor in the third switch S13 is the first direction D1, and the gate width direction of the transistor in the isolation switch is the second direction D2; the first direction D1 and the second direction D2 intersect. As an example, the intersection angle of the first direction D1 and the second direction D2 is

[0119] At least one angle range such as [30°, 60°], [60°, 90°], [45°, 100°], [90°, 120°], and [120°, 150°].

[0120] In at least one embodiment, the closer the intersection angle of the first direction and the second direction is to 90°, the smaller the probability of spatial coupling between the isolation switch and the third switch, and the better the isolation between the two.

[0121] In a specific embodiment, the first direction is a horizontal direction, and the second direction is a vertical direction, or the second direction is a horizontal direction, and the first direction is a vertical direction. That is, the intersection angle of the first direction and the second direction is 90°. It should be noted that the intersection angle of the first direction and the second direction in this embodiment is 90°, and a certain error is allowed. As long as the error is within plus or minus 10°, it can be understood that the intersection angle of the first direction and the second direction is 90°.

[0122] In at least one embodiment, the horizontal direction is the length direction of the chip, and the vertical direction is the width direction of the chip.

[0123] In at least one example, when the gate width direction of the transistor in the third switch is parallel to the gate width direction of the transistor in the isolation switch, the third switch and the isolation switch are prone to spatial coupling, resulting in signal interference. In view of this, in this embodiment, by making the gate width direction of the transistor in the third switch a first direction, and the gate width direction of the transistor in the isolation switch a second direction, and the first direction and the second direction intersect, signal interference between the third switch and the isolation switch due to spatial coupling can be avoided, thereby improving isolation in a compact area.

[0124] In a specific embodiment, the second end of the third switch S13 is configured to be grounded through the first pad GND1, and the second end of the isolation switch S14 is configured to be grounded through the second pad GND2.

[0125] In at least one embodiment, the first pad and the second pad may be spaced apart or adjacent to each other. This embodiment does not specifically limit the positional relationship between the first pad and the second pad.

[0126] In this embodiment, an isolation unit is connected between the first antenna port and the ground on the basis of the first RF transmission path TX1, and the first end of the isolation switch is configured to be connected to the first antenna port, and the second end of the isolation switch is connected to the second pad, and the second pad is configured to be grounded; the isolation unit can also prevent the signal on other RF paths from leaking to the first RF transmission path TX1 when the first RF transmission path TX1 is in the off state without affecting the normal signal transmission of the first RF transmission path TX1, thereby improving the isolation of the RF switch chip. Furthermore, the isolation unit and the third switch in this embodiment are grounded through two different pads on the chip, respectively, so the equivalent inductance of the first pad and the second pad can offset or reduce the equivalent parasitic impedance and parasitic inductance of the isolation unit and the third switch when they are connected to the ground on the substrate, thereby reducing the loss of the RF switch chip, so as to achieve high isolation and low loss of the RF switch chip.

[0127] The present application also provides a radio frequency switch chip, comprising a chip, a first radio frequency transmission path, a second radio frequency transmission path and a first radio frequency receiving path arranged on the chip, the second end of the first radio frequency transmission path and the first end of the first radio frequency receiving path are connected and connected to a first antenna port, the second end of the first radio frequency receiving path is connected to a second signal receiving port, and the second end of the second radio frequency transmission path is connected to a second antenna port; the first radio frequency transmission path comprises a series path connected between a first terminal and a second terminal, the first terminal is configured to be connected to the first signal transmission port, the second terminal is configured to be connected to the first antenna port, and the series path comprises a first switch; the first radio frequency transmission path also comprises a third switch, the first end of the third switch is connected to any node on the series path, the second end of the third switch is connected to a first pad, and the first pad is configured to be grounded; the first end of the isolation unit is configured to be connected to the first antenna port, the second end of the isolation unit is connected to the second pad, and the second pad is configured to be grounded.

[0128] In at least one embodiment, the first RF transmission path and the second RF transmission path are both connected to a first signal transmission port.

[0129] In at least one embodiment, the first RF transmission path and the second RF transmission path are respectively connected to a second signal transmission port and a third signal transmission port of the RF switching switch.

[0130] In at least one embodiment, the first RF transmission path and the second RF transmission path are both connected to the first RF transmission port or are respectively connected to the second signal transmission port A1 and the third signal transmission port A2 of the RF switching switch 200, and the first RF transmission path and the first RF receiving path have a common node, the first antenna port. Therefore, when the second RF transmission path and the first RF receiving path are configured to be in the on state, and the first RF transmission path is configured to be in the off state, the RF transmission signal transmitted from the second RF transmission port is likely to leak through the first RF transmission path to the first RF receiving path, and the RF receiving signal received from the first antenna port is also likely to leak through the first RF transmission path to the second RF transmission path, thereby causing the phenomenon of signal mutual interference between the second RF transmission path and the first RF receiving path in the working state.

[0131] To this end, in this embodiment, an isolation unit is connected between the first antenna port and the ground, and the isolation unit and the third switch are grounded through two different pads on the chip respectively. The isolation unit can not only reduce the signal interference between the second RF transmission path and the first RF receiving path, and improve the isolation of the RF switch chip, but also the equivalent inductance of the first pad and the second pad can offset or reduce the equivalent parasitic impedance and parasitic inductance of the isolation unit and the third switch when they are connected to the ground on the substrate, thereby achieving high isolation performance while ensuring other performances of the RF switch chip.

[0132] Specifically, the isolation unit is configured to block the RF signal on the second RF transmission path from leaking to the first RF reception path, and to block the RF signal on the first RF reception path from leaking to the second RF transmission path; thereby greatly improving the isolation of the RF switch chip.

[0133] In at least one embodiment, the first RF transmission path TX1 includes a first switch S11 on a series path and a third switch S13 connected to ground on a parallel path. The third switch S13 can use the same type of switch device as the first switch S11. For example, the first switch S11 and the third switch S13 can use a switch device with a larger gate voltage range, such as a high electron mobility transistor (HEMT) or a metal oxide semiconductor field effect transistor (MOSFET).

[0134] In at least one embodiment, the isolation unit may be a switch device, an inductor device, or a series-parallel combination of a switch device and an inductor device. It should be noted that when the isolation unit includes a switch device, the state of the isolation unit is consistent with the state of the third switch. When the third switch is in the on state, the switch device in the isolation unit is also in the on state. Conversely, when the third switch is in the off state, the switch device in the isolation unit is also in the off state.

[0135] In at least one embodiment, the first pad and the second pad may be spaced apart or adjacent to each other. This embodiment does not specifically limit the positional relationship between the first pad and the second pad.

[0136] In a specific embodiment, the isolation unit includes an isolation switch, the gate width direction of the transistor in the third switch is a first direction, the gate width direction of the transistor in the isolation switch is a second direction, and the first direction and the second direction intersect.

[0137] In this embodiment, by making the gate width direction of the transistor in the third switch a first direction, and the gate width direction of the transistor in the isolation switch a second direction, the first direction and the second direction intersect; it can be avoided that the gate width direction of the transistor in the third switch is parallel to the gate width direction of the transistor in the isolation switch or the distance between the third switch and the isolation switch is too close, resulting in spatial coupling or signal interference, thereby further improving the isolation.

[0138] This embodiment also provides a radio frequency switch circuit, including a first radio frequency transmission path, an isolation unit, a second radio frequency transmission path and a first radio frequency receiving path, wherein the second end of the first radio frequency transmission path and the first end of the first radio frequency receiving path are connected to a first antenna port, the second end of the first radio frequency receiving path is connected to a second signal receiving port, and the second end of the second radio frequency transmission path is connected to a second antenna port. The first radio frequency transmission path includes a series path connected between a first terminal and a second terminal, the first terminal is configured to be connected to the first signal transmission port, the second terminal is configured to be connected to the first antenna port, and the series path includes a first switch; the first radio frequency transmission path also includes a third switch, the first end of the third switch is connected to any node on the series path, and the second end of the third switch is connected to the ground; the first end of the isolation unit is configured to be connected to the first antenna port, and the second end of the isolation unit is connected to the ground.

[0139] In at least one embodiment, the first RF transmission path TX1 is used to transmit an RF signal of a specific frequency band to the first antenna port ANT1. The first RF reception path TR1 is used to receive an RF signal of a specific frequency band from the first antenna port ANT1. The first RF transmission path TX1 and the first RF reception path TR1 are both connected to the first antenna port ANT1. The frequency bands of the RF signals transmitted by the first RF transmission path TX1 and the first RF reception path TR1 may be the same or different.

[0140] As an example, the frequency band of the RF signal transmitted by the first RF transmission path TX1 is the same as the frequency band of the RF signal transmitted by the first RF reception path TR1. For example, the first RF transmission path TX1 and the first RF reception path TR1 are both used to transmit RF signals in the B41 frequency band.

[0141] The first RF transmission path TX1 and the second RF transmission path TX2 are configured to transmit RF signals of different frequency bands. For example, the first RF transmission path TX1 is configured to transmit RF signals of a first frequency band (e.g., N41 frequency band), and the second RF transmission path TX2 is configured to transmit RF signals of a second frequency band (e.g., N77 frequency band).

[0142] In a specific embodiment, the first RF transmission path and the second RF transmission path are both connected to the first signal transmission port A; or, the first RF transmission path and the second RF transmission path are respectively connected to the second signal transmission port A1 and the third signal transmission port A2 of the RF switching switch 200.

[0143] In at least one embodiment, Figure 7 As shown, both the first RF transmission path TX1 and the second RF transmission path TX2 are connected to the first signal transmission port A. Therefore, when the first RF transmission path TX1 is configured to transmit an RF signal of a first frequency band (e.g., N41 frequency band), the switch on the series path of the first RF transmission path TX1 is turned on, the switch on the parallel path of the first RF transmission path TX1 connected in parallel to the ground is turned off, the switch on the series path of the second RF transmission path TX2 is turned off, and the switch on the parallel path of the second RF transmission path TX2 connected in parallel to the ground is turned on, thereby preventing the RF signal transmitted on the first RF transmission path TX1 from leaking to the second RF transmission path TX2.

[0144] In at least one embodiment, when the second RF transmission path TX2 is configured to transmit an RF signal of a second frequency band (for example, the N77 frequency band), the seventh switch on the series path of the second RF transmission path TX1 is turned on, the eighth switch on the parallel path of the first RF transmission path TX1 connected in parallel to the ground is turned off, the switch on the series path of the first RF transmission path TX1 is turned off, and the switch on the parallel path of the first RF transmission path TX1 connected in parallel to the ground is turned on, thereby preventing the RF signal transmitted on the second RF transmission path TX2 from leaking to the first RF transmission path TX1.

[0145] In at least one embodiment, Figure 8 As shown, the first RF transmission path TX1 and the second RF transmission path TX2 are respectively connected to the second signal transmission port A1 and the third signal transmission port A2 of the RF switching switch 200, that is, the first RF transmission path TX1 and the second RF transmission path TX2 are respectively connected to different signal transmission ports of the same RF switching switch 200. Since the second signal transmission port A1 and the third signal transmission port A2 are two signal transmission ports integrated in the same RF switching switch 200, when the first RF transmission path TX1 is configured to transmit an RF signal of a first frequency band (for example, an N41 frequency band), the switch on the series path of the first RF transmission path TX1 is turned on, the switch on the parallel path of the first RF transmission path TX1 connected in parallel to the ground is turned off, the switch on the series path of the second RF transmission path TX2 is turned off, and the switch on the parallel path of the second RF transmission path TX2 connected in parallel to the ground is turned on, thereby preventing the RF signal transmitted on the first RF transmission path TX1 from leaking to the second RF transmission path TX2 through the RF switching switch 200.

[0146] In at least one embodiment, when the second RF transmission path TX2 is configured to transmit an RF signal of a second frequency band (for example, the N77 frequency band), the seventh switch on the series path of the second RF transmission path TX1 is turned on, the eighth switch on the parallel path of the first RF transmission path TX1 connected in parallel to the ground is turned off, the switch on the series path of the first RF transmission path TX1 is turned off, and the switch on the parallel path of the first RF transmission path TX1 connected in parallel to the ground is turned on, thereby preventing the RF signal transmitted on the second RF transmission path TX2 from leaking to the first RF transmission path TX1 through the RF switching switch 200.

[0147] In a specific embodiment, if Fig.14As shown, the RF switch circuit further includes a second inductor L101, a first end of the second inductor L101 is connected to a second end of the third switch, and a second end of the second inductor L101 is connected to a second end of the isolation unit.

[0148] In this embodiment, a second inductor L101 is connected between the second end of the third switch and the second end of the isolation unit. When the inductance of the second inductor L101 is within the range of (0,300pH], the second inductor L101 can offset or reduce the equivalent parasitic impedance and parasitic inductance when the isolation unit and the third switch are connected to the ground on the substrate. Thus, the loss of the RF switch chip is reduced to achieve high isolation and low loss of the RF switch chip.

[0149] It should be noted that the inductance of the second inductor L101 needs to be less than 300pH. The smaller the inductance of the second inductor L101 is, the better the effect of offsetting or reducing the equivalent parasitic impedance and parasitic inductance of the isolation unit and the third switch when they are connected to the ground on the substrate. For example: the inductance of the second inductor L101 is between (0-100pH],

[0150] The pH value is within any at least one range of (10pH-100pH], (10pH-150pH], (100pH-150pH], (150pH-300pH], etc.

[0151] In a specific embodiment, the first RF transmission path is configured to transmit an RF signal of a first frequency band to the first antenna port, the second RF transmission path is configured to transmit an RF signal of a second frequency band to the second antenna port, and the first RF reception path is configured to receive an RF signal of the first frequency band from the first antenna port; when the second RF transmission path and the first RF reception path are configured to be in an on state, the first RF transmission path is configured to be in an off state, and the isolation unit is configured to reduce signal interference between the second RF transmission path and the first RF reception path.

[0152] In a specific embodiment, the isolation unit includes an isolation switch, and when the second RF transmission path and the first RF reception path are configured to be in an on state, the first switch and the second switch in the first RF transmission path are opened, and the third switch and the isolation switch are closed.

[0153] In a specific embodiment, the isolation unit includes an isolation switch S14. Specifically, a first end of the isolation switch S14 is configured to be connected to the first antenna port, and a second end of the isolation unit is connected to a second pad, and the second pad is configured to be grounded.

[0154] In at least one embodiment, when the switch on the series path of the first RF transmission path TX1 is configured to be in an off state, the third switch S13 and the isolation switch S14 are turned on. Under the joint cooperation of the third switch S13 and the isolation switch S14, it is possible to prevent signals on other RF paths from leaking to the first RF transmission path TX1 and / or the first antenna port. Moreover, since the third switch S13 and the isolation switch S14 are grounded through two different pads respectively, spatial coupling between the isolation switch S14 and the third switch caused by sharing a pad for grounding can also be avoided, thereby further improving the isolation of the RF switch chip, so as to achieve high isolation performance while ensuring other performances of the RF switch chip.

[0155] The isolation unit described in this embodiment includes an isolation switch S14. By connecting the isolation switch between the first antenna port and the ground, the high isolation performance of the RF switch chip can be achieved in a wider frequency band range (for example, in the (0, 6GHz] frequency band range). As an example: by connecting the isolation switch between the first antenna port and the ground, the high isolation performance of the RF switch chip can be ensured in a wide frequency band range such as low frequency, medium frequency, high frequency, n77 frequency band, n79 frequency band and even WiFi frequency band.

[0156] In a specific embodiment, the first RF receiving path includes a fifth switch and a sixth switch, wherein a first end of the fifth switch is connected to the first antenna port, a second end of the fifth switch is connected to the first signal receiving port, a first end of the sixth switch is connected to the second end of the fifth switch, and a second end of the sixth switch is grounded;

[0157] The second RF transmission path includes a seventh switch and an eighth switch, wherein a first end of the seventh switch is connected to the first signal transmission port, a second end of the seventh switch is connected to the second antenna port, a first end of the eighth switch is connected to the first end of the seventh switch, and a second end of the eighth switch is grounded.

[0158] In at least one embodiment, the fifth switch S21 and the sixth switch S22 may also use switch devices with a larger gate voltage range, such as a high electron mobility transistor (HEMT) or a metal oxide semiconductor field effect transistor (MOSFET). This embodiment does not specifically limit the types of the fifth switch S21 and the sixth switch S22. It should be noted that the series path of the first RF receiving path RX1 includes but is not limited to the fifth switch S21, and the series path of the first RF transmitting path TX1 may include one or more switches. There may be one or more parallel paths connected to the ground on the first RF receiving path RX1, and the switches connected to the ground on the parallel path of the first RF receiving path RX1 include but are not limited to the sixth switch S22.

[0159] In at least one embodiment, the seventh switch S31 and the eighth switch S32 may also use switch devices with a larger gate voltage range, such as a high electron mobility transistor (HEMT) or a metal oxide semiconductor field effect transistor (MOSFET). This embodiment does not specifically limit the types of the seventh switch S31 and the eighth switch S32. It should be noted that the series path of the second RF transmission path TX2 includes but is not limited to the seventh switch S31, and the series path of the second RF transmission path TX2 may include one or more switches. There may be one or more parallel paths connected to the ground on the second RF transmission path TX2, and the switches connected to the ground on the parallel path of the second RF transmission path TX2 include but are not limited to the eighth switch S32.

[0160] like Fig.15 As shown, Fig.15 is a simulation diagram of the isolation degree simulated at the first RF receiving port D. The blue curve A1 is the isolation value when the RF switch chip / RF switch circuit in the related technical solution is not equipped with an isolation unit, and the red curve A2 is the isolation value after the RF switch chip / RF switch circuit of the present application is equipped with an isolation unit. Fig.15 It can be seen that the blue curve A1 can achieve an isolation value of about 40dB (specifically 39.832dB) for the first RF receiving port D without adding an isolation unit; the red curve A2 can achieve an isolation value of about 60dB (specifically 59.141dB) for the first RF receiving port D with adding an isolation unit. It can be seen that in this embodiment, after connecting an isolation unit between the first antenna port and the ground, the isolation of the first RF receiving port D can be improved by about 20dB, thereby greatly improving the isolation of the RF switch chip and achieving high isolation performance.

[0161] like Fig.16 As shown, Fig.16 is a simulation diagram of the isolation obtained by simulating the first antenna port B. The blue curve A3 is the isolation value when the RF switch chip / RF switch circuit in the related technical solution is not equipped with an isolation unit. The red curve A2 is the isolation value after the RF switch chip / RF switch circuit of this application is equipped with an isolation unit. Fig.16It can be seen that the blue curve A1 can achieve an isolation value of about 40dB (specifically 39.987dB) for the first antenna port B without adding an isolation unit; the red curve A2 can achieve an isolation value of about 60dB (specifically 58.676dB) for the first antenna port B with adding an isolation unit. It can be seen that in this embodiment, after connecting an isolation unit between the first antenna port and the ground, the isolation of the first antenna port B can be improved by about 20dB, thereby greatly improving the isolation of the RF switch chip and achieving high isolation performance.

[0162] like Fig.17 As shown, Fig.17 is a simulation diagram of the isolation degree simulated at the first RF transmitting port A. The blue curve A3 is the isolation value when the RF switch chip / RF switch circuit in the related technical solution is not equipped with an isolation unit. The red curve A2 is the isolation value after the RF switch chip / RF switch circuit of the present application is equipped with an isolation unit. Fig.17 It can be seen that the blue curve A1 can achieve an isolation value of about 40dB (specifically 39.360dB) for the first RF transmitting port A without adding an isolation unit; the red curve A2 can achieve an isolation value of about 60dB (specifically 57.896dB) for the first RF transmitting port A with adding an isolation unit. It can be seen that in this embodiment, after connecting an isolation unit between the first antenna port and the ground, the isolation of the first RF transmitting port A can be improved by about 20dB, thereby greatly improving the isolation of the RF switch chip and achieving high isolation performance.

[0163] like Fig.18 As shown, Fig.18 is a simulation diagram of the isolation degree simulated at the second antenna port C. The blue curve A3 is the isolation value when the RF switch chip / RF switch circuit in the related technical solution is not equipped with an isolation unit. The red curve A2 is the isolation value after the RF switch chip / RF switch circuit of this application is equipped with an isolation unit. Fig.18 It can be seen that the blue curve A1 can achieve an isolation value of about 40dB (specifically 39.694dB) for the second antenna port C without adding an isolation unit; the red curve A2 can achieve an isolation value of about 60dB (specifically 59.120dB) for the second antenna port C with adding an isolation unit. It can be seen that in this embodiment, after connecting an isolation unit between the first antenna port and the ground, the isolation of the second antenna port C can be improved by about 20dB, thereby greatly improving the isolation of the RF switch chip and achieving high isolation performance.

[0164] In summary, in this embodiment, by connecting an isolation unit between the first antenna port and the ground, the isolation unit greatly improves the isolation of the first RF receiving port D, the first antenna port B, the first RF transmitting port A and the second antenna port C without affecting the normal signal transmission of the first RF transmission path TX1.

[0165] This embodiment also provides a radio frequency front-end module, including the radio frequency switch chip and the radio frequency switch circuit as described in the above embodiment.

[0166] The foregoing is merely a specific embodiment of the present invention, which enables those skilled in the art to understand or implement the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features claimed herein.

Claims

1. A radio frequency switch chip, characterized in that: It includes a chip, a first RF transmission path and an isolation unit arranged on the chip, the first RF transmission path includes a series path connected between a first terminal and a second terminal, the first terminal is configured to be connected to a first signal transmission port, the second terminal is configured to be connected to a first antenna port, and the series path includes a first switch; the first RF transmission path also includes a third switch, the first end of the third switch is connected to any node on the series path, the second end of the third switch is connected to a first pad, and the first pad is configured to be grounded; the first end of the isolation unit is configured to be connected to the first antenna port, the second end of the isolation unit is connected to a second pad, and the second pad is configured to be grounded.

2. The radio frequency switch chip according to claim 1, characterized in that: The RF switch chip further includes a metal trace, a first end of the metal trace is connected to the first pad, a second end of the metal trace is connected to the second pad, and an equivalent inductance of the metal trace is in the range of (0,300pH].

3. The radio frequency switch chip according to claim 1, characterized in that: The series path also includes a second switch, wherein a first end of the first switch is connected to the first terminal, a second end of the first switch is connected to a first end of the second switch, a second end of the second switch is connected to the second terminal, and a first end of the third switch is connected to a first end of the second switch.

4. The radio frequency switch chip according to claim 1, characterized in that: in, The first pad and the second pad are spaced apart from each other on the chip.

5. The radio frequency switch chip according to claim 1, characterized in that: The distance between the midpoint of the first pad and the midpoint of the second pad is in the range of [10um, 1200um].

6. The radio frequency switch chip according to claim 1, characterized in that: The isolation unit includes an isolation switch.

7. The radio frequency switch chip according to claim 1, characterized in that: The isolation unit includes a first capacitor and a first inductor; the first capacitor and the first inductor are connected in series, or the first capacitor and the first inductor are connected in parallel.

8. The radio frequency switch chip according to claim 6, characterized in that: The gate width direction of the transistor in the third switch is a first direction, the gate width direction of the transistor in the isolation switch is a second direction, and the first direction and the second direction intersect.

9. The radio frequency switch chip according to claim 8, characterized in that: An intersection angle between the first direction and the second direction is in the range of [60°, 120°].

10. The radio frequency switch chip according to claim 8, characterized in that: The first direction is a horizontal direction and the second direction is a vertical direction, or the second direction is a horizontal direction and the first direction is a vertical direction.

11. The radio frequency switch chip according to claim 6, characterized in that: The gate width direction of the transistor in the third switch and the gate width direction of the transistor in the isolation switch are in the same direction, and the minimum distance between the third switch and the isolation switch is within the range of [15um, 70um].

12. The radio frequency switch chip according to claim 3, characterized in that: The gate width direction of the transistor in the first switch is the first direction, the gate width direction of the transistor in the second switch is the first direction, and the first switch and the second switch are arranged at intervals along the second direction.

13. The radio frequency switch chip according to claim 1, characterized in that: The first switch and the third switch are arranged at intervals along a first direction, the first pad is arranged on a side of the third switch away from the first switch, and the first terminal is arranged on a side of the first switch away from the third switch.

14. The radio frequency switch chip according to claim 6, characterized in that: The second switch and the isolation switch are arranged at intervals along a first direction, the first antenna port is arranged on a side of the second switch away from the first switch, and the second pad is arranged on a side of the isolation switch away from the first antenna port.

15. The radio frequency switch chip according to claim 8, characterized in that: The second pad is disposed between the third switch and the isolation switch.

16. The radio frequency switch chip according to claim 6, characterized in that: The area of ​​the isolation switch is smaller than the area of ​​the third switch.

17. The radio frequency switch chip according to claim 6, characterized in that: When the first switch and the second switch are configured to be in the on state, the third switch and the isolation switch are configured to be in the off state; when the first switch and the second switch are configured to be in the off state, the third switch and the isolation switch are configured to be in the on state.

18. The radio frequency switch chip according to claim 6, characterized in that: It also includes a first RF receiving path arranged on the chip, the first RF transmitting path and the first RF receiving path are both connected to the first antenna port, the first RF receiving path includes a fifth switch and a sixth switch, the first end of the fifth switch is connected to the first antenna port, the second end of the fifth switch is connected to the first signal receiving port, the first end of the sixth switch is connected to the second end of the fifth switch, and the second end of the sixth switch is grounded through a third pad.

19. The radio frequency switch chip according to claim 18, characterized in that: The gate width direction of the fifth switch and the gate width direction of the transistor in the sixth switch are the second direction; the fifth switch and the sixth switch are arranged on a side of the isolation switch away from the second switch, the fifth switch and the sixth switch are arranged at intervals along the second direction, the first signal receiving port is arranged between the fifth switch and the sixth switch, and the third pad is arranged on a side of the sixth switch away from the fifth switch.

20. The radio frequency switch chip according to claim 18, characterized in that: It also includes a second RF transmission path arranged on the chip, the second RF transmission path includes a seventh switch and an eighth switch, a first end of the seventh switch is connected to the first signal transmission port, a second end of the seventh switch is connected to the second antenna port, a first end of the eighth switch is connected to the first end of the seventh switch, and a second end of the eighth switch is grounded.

21. The radio frequency switch chip according to claim 20, characterized in that: The first RF transmission path and the second RF transmission path are both connected to a first signal transmission port; Alternatively, the first RF transmission path and the second RF transmission path are respectively connected to the second signal transmission port and the third signal transmission port of the RF switching switch.

22. The radio frequency switch chip according to claim 20, characterized in that: The seventh switch and the eighth switch are arranged on a side of the first switch away from the second switch, and the seventh switch and the eighth switch are arranged at intervals along the first direction; the gate width direction of the seventh switch and the gate width direction of the transistor in the eighth switch are the first direction; the second antenna port is arranged between the seventh switch and the eighth switch, the eighth switch is grounded through a fourth pad, and the fourth pad is arranged on a side of the eighth switch away from the seventh switch.

23. The radio frequency switch chip according to claim 20, characterized in that: The first RF transmission path is configured to transmit a RF signal of a first frequency band to the first antenna port, the second RF transmission path is configured to transmit a RF signal of a second frequency band to the second antenna port, and the first RF reception path is configured to receive a RF signal of the first frequency band from the first antenna port; When the second RF transmit path and the first RF receive path are configured to be in an on state, the first RF transmit path is configured to be in an off state, and the isolation unit is configured to reduce signal interference between the second RF transmit path and the first RF receive path.

24. The radio frequency switch chip according to claim 20, characterized in that: When the second RF transmission path and the first RF reception path are configured to be in an on state, the first RF transmission path is configured to be in an off state, and the isolation switch is configured to be in an on state.

25. The radio frequency switch chip according to claim 1, characterized in that: The first signal transmitting port is configured to be connected to an output end of a power amplifier, and the first signal receiving port is configured to be connected to an input end of a low noise amplifier.

26. A radio frequency switch chip, characterized in that: The invention comprises a chip, a first radio frequency transmission path and an isolation switch arranged on the chip, wherein the first radio frequency transmission path comprises a series path connected between a first terminal and a second terminal, the first terminal is configured to be connected to a first signal transmission port, the second terminal is configured to be connected to a first antenna port, and the series path comprises a first switch; the first radio frequency transmission path also comprises a third switch, the first end of the third switch is connected to any node on the series path, the second end of the third switch is grounded, the first end of the isolation switch is configured to be connected to the first antenna port, the second end of the isolation switch is grounded, the gate width direction of the transistor in the third switch is a first direction, the gate width direction of the isolation switch is a second direction, and the first direction and the second direction intersect.

27. The radio frequency switch chip according to claim 26, characterized in that: The second end of the third switch is configured to be grounded through the first pad, and the second end of the isolation switch is configured to be grounded through the second pad.

28. A radio frequency switch chip, characterized in that: The invention comprises a chip, a first RF transmission path, a second RF transmission path and a first RF reception path arranged on the chip, wherein the second end of the first RF transmission path and the first end of the first RF reception path are connected and connected to a first antenna port, the second end of the first RF reception path is connected to a second signal reception port, and the second end of the second RF transmission path is connected to a second antenna port; the first RF transmission path comprises a series path connected between a first terminal and a second terminal, the first terminal is configured to be connected to the first signal transmission port, the second terminal is configured to be connected to the first antenna port, and the series path comprises a first switch; the first RF transmission path also comprises a third switch, the first end of the third switch is connected to any node on the series path, the second end of the third switch is connected to a first pad, and the first pad is configured to be grounded; the first end of the isolation unit is configured to be connected to the first antenna port, the second end of the isolation unit is connected to the second pad, and the second pad is configured to be grounded.

29. The radio frequency switch chip according to claim 28, characterized in that: The isolation unit includes an isolation switch, the gate width direction of the transistor in the third switch is a first direction, the gate width direction of the transistor in the isolation switch is a second direction, and the first direction and the second direction intersect.

30. The radio frequency switch chip according to claim 28, characterized in that: The first RF transmission path and the second RF transmission path are both connected to a first signal transmission port; Alternatively, the first RF transmission path and the second RF transmission path are respectively connected to the second signal transmission port and the third signal transmission port of the RF switching switch.

31. A radio frequency switching circuit, characterized in that: The device comprises a first RF transmission path, an isolation unit, a second RF transmission path and a first RF reception path, wherein the second end of the first RF transmission path and the first end of the first RF reception path are connected to a first antenna port, the second end of the first RF reception path is connected to a second signal reception port, and the second end of the second RF transmission path is connected to a second antenna port; The first RF transmission path includes a series path connected between a first terminal and a second terminal, the first terminal is configured to be connected to a first signal transmission port, the second terminal is configured to be connected to a first antenna port, and the series path includes a first switch; the first RF transmission path also includes a third switch, the first end of the third switch is connected to any node on the series path, and the second end of the third switch is connected to the ground; the first end of the isolation unit is configured to be connected to the first antenna port, and the second end of the isolation unit is connected to the ground.

32. The radio frequency switch circuit according to claim 31, characterized in that: The first RF transmission path is configured to transmit a RF signal of a first frequency band to the first antenna port, the second RF transmission path is configured to transmit a RF signal of a second frequency band to the second antenna port, and the first RF reception path is configured to receive a RF signal of the first frequency band from the first antenna port; When the second RF transmit path and the first RF receive path are configured to be in an on state, the first RF transmit path is configured to be in an off state, and the isolation unit is configured to reduce signal interference between the second RF transmit path and the first RF receive path.

33. The radio frequency switch circuit according to claim 31, characterized in that: The isolation unit includes an isolation switch. When the second RF transmission path and the first RF reception path are configured to be in an on state, the first switch and the second switch in the first RF transmission path are opened, and the third switch and the isolation switch are closed.

34. The radio frequency switch circuit according to claim 31, characterized in that: The first RF receiving path includes a fifth switch and a sixth switch, wherein a first end of the fifth switch is connected to the first antenna port, a second end of the fifth switch is connected to the first signal receiving port, a first end of the sixth switch is connected to the second end of the fifth switch, and a second end of the sixth switch is grounded; The second RF transmission path includes a seventh switch and an eighth switch, wherein a first end of the seventh switch is connected to the first signal transmission port, a second end of the seventh switch is connected to the second antenna port, a first end of the eighth switch is connected to the first end of the seventh switch, and a second end of the eighth switch is grounded.

35. The radio frequency switch circuit according to claim 31, characterized in that: The first RF transmission path and the second RF transmission path are both connected to the first signal transmission port; or, the first RF transmission path and the second RF transmission path are respectively connected to the second signal transmission port and the third signal transmission port of the RF switching switch.

36. The radio frequency switch circuit according to claim 31, characterized in that: The radio frequency switch circuit further includes a second inductor, a first end of the second inductor is connected to a second end of the third switch, and a second end of the second inductor is connected to a second end of the isolation unit.

37. A radio frequency front-end module, characterized in that: It comprises the radio frequency switch chip as described in any one of claims 1 to 30, or the radio frequency switch circuit as described in any one of claims 31 to 36.

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