Phototransistor and display panel

Abstract

The invention discloses a photosensitive transistor and a display panel. The photo-transistor includes an active layer, a gate insulating layer, and a first transparent electrode layer. The active layer is arranged on the substrate, and a channel region is formed in the active layer. The gate insulating layer is arranged on the active layer and covers the channel region. The first transparent electrode layer is at least partially arranged on the gate insulating layer to form a gate of the photo-transistor, and the orthographic projection part of the channel region on the substrate falls into the orthographic projection of the gate on the substrate. Light to be detected irradiates the channel region through the first transparent electrode layer to form light sensing current. A channel region part located outside the orthographic projection of the grid electrode on the substrate can generate a potential well or a potential barrier under the bias voltage of the grid electrode, electron-hole pairs are excited after illumination so as to reduce the potential well or the potential barrier, and the light-sensitive current is further improved. The photosensitive transistor is manufactured by adopting a process compatible with the TFT-LCD, so that the photosensitive function of the TFT-LCD can be realized while the process efficiency is improved.